JP2002305212A - Mounting paste for semiconductor - Google Patents

Mounting paste for semiconductor

Info

Publication number
JP2002305212A
JP2002305212A JP2001107360A JP2001107360A JP2002305212A JP 2002305212 A JP2002305212 A JP 2002305212A JP 2001107360 A JP2001107360 A JP 2001107360A JP 2001107360 A JP2001107360 A JP 2001107360A JP 2002305212 A JP2002305212 A JP 2002305212A
Authority
JP
Japan
Prior art keywords
bisphenol
hydrazide
dicyandiamide
epoxy resin
urethane prepolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001107360A
Other languages
Japanese (ja)
Inventor
Minoru Hara
実 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP2001107360A priority Critical patent/JP2002305212A/en
Publication of JP2002305212A publication Critical patent/JP2002305212A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide mounting paste for a semiconductor which has low resistance while making the most of the properties that epoxy resin has had hitherto, and is capable of hardening at low temperatures. SOLUTION: This mounting paste for a semiconductor includes (A) bisphenol- type epoxy resin, (B) urethane prepolymer where isocyanate equivalent is 1000 or higher (C) hydrazide (for example, bisphenol A ether dicarboxylic acid hydrazide) and dicyandiamide, and (D) silver power as mandatory components, and where the resin components of [(A)+(B)] is mixed by 10-40 wt.%, the hydrazide of the hardener (C) by 1-10 wt.%, the dicyandiamide of the hardener (C) by 1-10 wt.%, and the silver powder (D) by 20-75 wt.% with respect to the whole.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、エポキシ樹脂を主
成分とする熱硬化性の接着剤に関するものであり、半導
体チップなどマウント用の導電性接着剤として好適なも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermosetting adhesive containing an epoxy resin as a main component, and is suitable as a conductive adhesive for mounting semiconductor chips and the like.

【0002】[0002]

【従来の技術】半導体チップ等の電子部品をアルミナ基
板や有機基板などの回路基板上の所定箇所に搭載するた
め、様々なエポキシ樹脂系の絶縁性および導電性ペース
トが提案されている。これらマウント用の接着剤には、
低応力や耐熱性などで優れた特性が求められている。
2. Description of the Related Art Various epoxy resin-based insulating and conductive pastes have been proposed for mounting electronic components such as semiconductor chips at predetermined locations on a circuit board such as an alumina substrate or an organic substrate. These mounting adhesives include:
Excellent characteristics such as low stress and heat resistance are required.

【0003】[0003]

【発明が解決しようとする課題】現在、6mm角以上の
大型半導体チップは、QFPなどのパッケージ形態で製
品化され、使用される基板には銅フレームが使用されて
いる。しかし、銅とシリコンチップのもつ線膨張係数の
差が、チップ搭載硬化後の反りを生じさせ、この反り
が、チップクラック等の問題を起こしている。また、パ
ッケージの信頼性を向上させるためには、パッケージ全
体の応力を小さくすることが重要である。
At present, large semiconductor chips of 6 mm square or more are commercialized in the form of a package such as a QFP, and a copper frame is used as a substrate to be used. However, the difference in the coefficient of linear expansion between the copper and silicon chips causes warpage after the chip mounting and curing, and this warp causes problems such as chip cracks. Further, in order to improve the reliability of the package, it is important to reduce the stress of the entire package.

【0004】そしてまた、Cuフレームのように熱によ
る酸化被膜を作りやすいものは、モールド樹脂との濡れ
性が悪くなり、吸湿リフローの信頼性が低くなる傾向に
ある。そこで、酸化被膜を作りにくいような低温でチッ
プをマウントして硬化させれば、酸化被膜の少ない状態
でモールドを行うことができ、信頼性の向上につながる
と考えられている。
[0004] Further, a material such as a Cu frame, which easily forms an oxide film by heat, tends to have poor wettability with a mold resin and to have low reliability of moisture absorption reflow. Therefore, it is considered that if the chip is mounted and cured at a low temperature at which it is difficult to form an oxide film, the molding can be performed with a small amount of the oxide film, leading to an improvement in reliability.

【0005】従来の電子デバイス用接着剤では、主剤の
熱硬化性樹脂にビスフェノールAタイプおよびビスフェ
ノールFタイプのエポキシ樹脂が用いられており、ま
た、潜在性や可使時間を長くするため、イミダゾール系
の硬化剤を用いられている。しかし、上記の組合せで作
成される従来接着剤は、弾性率が高く硬いため、先に述
べた膨張係数の差から生じる応力を緩和することができ
ない。
In conventional adhesives for electronic devices, bisphenol A type and bisphenol F type epoxy resins are used as a thermosetting resin as a main component, and imidazole-based epoxy resins are used in order to increase the potential and the pot life. Is used. However, the conventional adhesives made with the above combinations have high elasticity and are hard, so that the stress generated due to the difference in expansion coefficient described above cannot be reduced.

【0006】応力を緩和する目的としてエラストマーを
導入することが知られているが、一般的なエラストマー
を用いると、応力を緩和することはできてもビスフェノ
ールタイプのエポキシ樹脂が従来もっていた耐熱性や耐
湿性の低下を招いていた。
[0006] It is known to introduce an elastomer for the purpose of relieving stress. However, when a general elastomer is used, bisphenol-type epoxy resin can relieve stress even if it can reduce stress. This resulted in a decrease in moisture resistance.

【0007】本発明の目的は、上記の問題点を解決する
ために、従来エポキシ樹脂がもっていた特性を生かしつ
つ低応力性を有し、さらに低温硬化が可能な半導体用マ
ウントペーストを提供するものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor mount paste which has low stress while utilizing the properties of an epoxy resin and which can be cured at a low temperature, in order to solve the above problems. It is.

【0008】[0008]

【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、主材の熱硬化性
樹脂として特定の二成分を用いた熱硬化性接着剤が、高
い耐熱性と低応力性をもつことを見いだし、本発明を完
成したものである。
Means for Solving the Problems The present inventor has conducted intensive studies to achieve the above object, and as a result, a thermosetting adhesive using specific two components as a thermosetting resin as a main material has been developed. The inventors have found that they have high heat resistance and low stress, and have completed the present invention.

【0009】即ち、本発明は、(A)ビスフェノール型
エポキシ樹脂、(B)イソシアネート当量が1000以
上であるウレタンプレポリマー、(C)硬化剤として、
ヒドラジッドおよびジシアンジアミド、並びに(D)銀
粉を必須成分とし、ペースト全体に対して、[(A)+
(B)]の樹脂成分が10〜40重量%、(C)硬化剤
のヒドラジッドが1〜10重量%、(C)硬化剤のジシ
アンジアミドが1〜10重量%、(D)銀粉が20〜7
5重量%の割合に、それぞれ配合されてなることを特徴
とする半導体用マウントペーストである。
That is, the present invention provides (A) a bisphenol-type epoxy resin, (B) a urethane prepolymer having an isocyanate equivalent of 1000 or more, and (C) a curing agent.
Hydrazide, dicyandiamide, and (D) silver powder are essential components, and [(A) +
(B)] is 10 to 40% by weight, (C) 1 to 10% by weight of hydrazide as a hardener, (C) 1 to 10% by weight of dicyandiamide as a hardener, and (D) 20 to 7% of silver powder.
It is a mount paste for a semiconductor characterized by being blended in a proportion of 5% by weight.

【0010】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.

【0011】本発明に用いる熱硬化性樹脂成分として
は、(B)イソシアネート(NCO)当量が1000以
上であるウレタンプレポリマーおよび(A)ビスフェノ
ール型エポキシ樹脂の混合物である。(B)のウレタン
プレポリマーは、液状であることが好ましい。ウレタン
プレポリマーの基本骨格については、特に限定はなく、
ジフェニルメタンジイソシアネート、ヘキサメチレンジ
イソシアネート等が挙げられる。また、(A)ビスフェ
ノール型のエポキシ樹脂も、液状であることが好まし
く、重合度も1か0であるものがよい。その基本骨格に
ついては、ビスフェノールAタイプ、ビスフェノールF
タイプ、ビスフェノールADタイプなどが挙げられる。
(A)ビスフェノール型エポキシ樹脂と(B)のウレタ
ンプレポリマーの配合割合[(A):(B)]は、マウ
ントペースト用途では重量比率で10:2.5〜10:
5が好ましい。この配合割合より(A)ビスフェノール
型エポキシ樹脂が過多になれば応力緩和性が下がり、
(B)のウレタンプレポリマーが過多になれば耐熱性等
が下がる。従ってこの範囲がよい。また、[(A)+
(B)]の熱硬化性樹脂成分の配合割合は、ペースト組
成物全体に対して10〜40重量%が好ましい。
The thermosetting resin component used in the present invention is a mixture of (B) a urethane prepolymer having an isocyanate (NCO) equivalent of 1000 or more and (A) a bisphenol type epoxy resin. The urethane prepolymer (B) is preferably in a liquid state. There is no particular limitation on the basic skeleton of the urethane prepolymer,
Examples include diphenylmethane diisocyanate and hexamethylene diisocyanate. The bisphenol-type epoxy resin (A) is also preferably in a liquid state, and the degree of polymerization is preferably 1 or 0. The basic skeleton is bisphenol A type, bisphenol F
And bisphenol AD type.
(A) The mixing ratio of the bisphenol-type epoxy resin and the urethane prepolymer (B) [(A) :( B)] is 10: 2.5 to 10:
5 is preferred. If the amount of the bisphenol-type epoxy resin (A) is excessive from this mixing ratio, the stress relaxation property decreases,
If the urethane prepolymer (B) is excessive, heat resistance and the like will be reduced. Therefore, this range is good. Also, [(A) +
The mixing ratio of the thermosetting resin component (B)] is preferably from 10 to 40% by weight based on the whole paste composition.

【0012】本発明に用いる(C)硬化剤としては、ヒ
ドラジッドおよびジシアンジアミドの2種類を併用する
ことが必須である。ヒドラジッドとしては、例えば、
1,3−ビス(ヒドラジノエチル)イソプロピルヒダン
トイン、7,11−オクタデカジエン−1,18−カル
ボヒドラジド、ビスフェノールAエーテルジカルボン酸
ヒドラジド等が挙げられる。
As the curing agent (C) used in the present invention, it is essential to use two kinds of hydrazide and dicyandiamide in combination. As hydrazide, for example,
Examples thereof include 1,3-bis (hydrazinoethyl) isopropylhydantoin, 7,11-octadecadien-1,18-carbohydrazide, bisphenol A ether dicarboxylic acid hydrazide, and the like.

【0013】また、ヒドラジッドと併用されるジシアン
ジアミドとしては、各種粒径のものが使用可能である。
ジシアンジアミドの具体的銘柄としては、DICY−7
(油化シェルエポキシ社製、商品名)がある。ヒドラジ
ッド系の触媒を用いることにより、エポキシとウレタン
とがランダムなネットワークを形成させることになっ
て、低温キュアが可能となり、さらにジシアンジアミド
との併用により、耐熱性を向上させることができる。
As the dicyandiamide used in combination with hydrazide, those having various particle sizes can be used.
Specific brands of dicyandiamide include DICY-7
(Trade name, manufactured by Yuka Shell Epoxy). By using a hydrazide-based catalyst, a random network is formed between epoxy and urethane, low-temperature curing becomes possible, and heat resistance can be improved when used in combination with dicyandiamide.

【0014】上記のヒドラジッドの配合割合は、ペース
ト組成物全体に対して1〜10重量%、またジシアンジ
アミドの配合割合も、ペースト組成物全体に対して1〜
10重量%であることが好ましい。
The compounding ratio of the above hydrazide is 1 to 10% by weight based on the whole paste composition, and the compounding ratio of dicyandiamide is also 1 to 10% by weight based on the whole paste composition.
Preferably it is 10% by weight.

【0015】本発明に用いる(D)銀粉としては、形状
等に制限なく使用することができる。銀粉の配合割合
は、樹脂組成物に対して20〜75重量%であることが
好ましい。
The silver powder (D) used in the present invention can be used without any limitation in shape and the like. The mixing ratio of the silver powder is preferably 20 to 75% by weight based on the resin composition.

【0016】本発明の半導体用マウントペーストにかか
る製造方法は、常法により上述した各成分、即ち、ビス
フェノール型エポキシ樹脂、ウレタンプレポリマー、ヒ
ドラジッド、ジシアンジアミド、銀粉、その他成分を加
え、十分に攪拌して容易に製造することができる。
In the production method according to the present invention, the above-mentioned components, that is, bisphenol-type epoxy resin, urethane prepolymer, hydrazide, dicyandiamide, silver powder, and other components are added by a conventional method, and the mixture is sufficiently stirred. And can be easily manufactured.

【0017】[0017]

【作用】本発明において、熱硬化性樹脂の主材樹脂とし
て、上記した特定の2種類[(B)ウレタンプレポリマ
ーおよび(A)ビスフェノール型エポキシ樹脂の混合
物]を用い、変性アミン硬化剤(ヒドラジッドおよびジ
シアンジアミド)を用いることにより、低応力性を有
し、耐熱信頼性のが高いマウント用ペーストを得ること
ができる。
In the present invention, the above-mentioned specific two kinds (a mixture of (B) urethane prepolymer and (A) bisphenol type epoxy resin) are used as the main resin of the thermosetting resin, and a modified amine curing agent (hydrazide) is used. And dicyandiamide), it is possible to obtain a mounting paste having low stress and high heat resistance.

【0018】[0018]

【発明の実施の形態】次に、本発明を実施例によって具
体的に説明するが、本発明はこれらの実施例によって限
定されるものではない。以下の実施例および比較例にお
いて、「部」とあるのは「重量部」を意味する。
Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “parts” means “parts by weight”.

【0019】実施例1 ビスフェノールF型エポキシ樹脂としてYL−983U
(油化シェルエポキシ社製、商品名)12.5部、イソ
シアネート当量1000以上のウレタンプレポリマーと
してQR9276(旭電化社製商品名、イソシアネート
当量1620)6.2部、硬化剤にはビスフェノールA
エーテルジカルボン酸ヒドラジド0.3部およびジシア
ンジアミド0.5部、鱗片状銀粉73部、および反応希
釈剤としてt−ブチルフェニルグリシジルエーテル(以
後TGEと略す)7.5部を混合して熱硬化性接着剤を
得た。この接着剤について接着強度を測定し、またチッ
プの反り量を評価して結果を表1に示した。
Example 1 As a bisphenol F type epoxy resin, YL-983U was used.
12.5 parts (trade name, manufactured by Yuka Shell Epoxy Co., Ltd.), 6.2 parts of QR9276 (trade name, manufactured by Asahi Denka Co., 1620 isocyanate equivalent) as a urethane prepolymer having an isocyanate equivalent of 1,000 or more, and bisphenol A as a curing agent
0.3 part of ether dicarboxylic acid hydrazide and 0.5 part of dicyandiamide, 73 parts of flaky silver powder, and 7.5 parts of t-butylphenyl glycidyl ether (hereinafter abbreviated as TGE) as a reaction diluent are mixed to form a thermosetting adhesive. Agent was obtained. The adhesive strength of this adhesive was measured, and the amount of warpage of the chip was evaluated. The results are shown in Table 1.

【0020】比較例1 ビスフェノールF型エポキシ樹脂としてYL−983U
(油化シェルエポキシ社製、商品名)18.7部、硬化
剤にはビスフェノールAエーテルジカルボン酸ヒドラジ
ド0.3部とジシアンジアミド0.5部および鱗片状銀
粉を73部、および反応希釈剤としてTGE7.5部を
混合して熱硬化性接着剤を得た。実施例と同様の方法で
接着強度およびチップの反り量を評価測定して、結果を
表1に示した。
Comparative Example 1 YL-983U as a bisphenol F type epoxy resin
18.7 parts (manufactured by Yuka Shell Epoxy Co., Ltd.), 0.3 parts of bisphenol A ether dicarboxylic acid hydrazide, 0.5 part of dicyandiamide and 73 parts of flaky silver powder as curing agents, and TGE7 as a reaction diluent .5 parts to obtain a thermosetting adhesive. The adhesive strength and the amount of warpage of the chip were evaluated and measured in the same manner as in the examples, and the results are shown in Table 1.

【0021】比較例2 イソシアネート当量1000以上のウレタンプレポリマ
ーとしてQR9276(旭電化社製商品名、イソシアネ
ート当量1620)18.7部、硬化剤にはビスフェノ
ールAエーテルジカルボン酸ヒドラジド0.3部とジシ
アンジアミド0.5部、鱗片状銀粉を73部、および反
応希釈剤としてTGEを7.5部を混合して熱硬化性接
着剤を得た。この接着剤について実施例と同様の方法で
接着強度およびチップの反り量を評価して結果を表1に
示した。
Comparative Example 2 As a urethane prepolymer having an isocyanate equivalent of 1000 or more, 18.7 parts of QR9276 (trade name, manufactured by Asahi Denka Co., Ltd., isocyanate equivalent: 1620), 0.3 parts of bisphenol A ether dicarboxylic acid hydrazide and dicyandiamide 0 as curing agents were used. A thermosetting adhesive was obtained by mixing 0.5 part, 73 parts of flaky silver powder, and 7.5 parts of TGE as a reaction diluent. The adhesive strength and the amount of warpage of the chip were evaluated for this adhesive in the same manner as in the example, and the results are shown in Table 1.

【0022】比較例3 ビスフェノールF型エポキシ樹脂としてYL−983U
(油化シェルエポキシ社製、商品名)12.5部、イソ
シアネート当量1000未満のウレタンプレポリマーと
してコロネートHX(日本ポリウレタン工業社製商品
名、イソシアネート当量332.6)6.2部、硬化剤
にはビスフェノールAエーテルジカルボン酸ヒドラジド
0.3部とジシアンジアミド0.5部、鱗片状銀粉73
部、および反応希釈剤としてTGE7.5部を混合して
熱硬化性接着剤を得た。実施例と同様の方法で接着強度
およびチップの反り量を評価測定して、結果を表1に示
した。
Comparative Example 3 YL-983U as a bisphenol F type epoxy resin
12.5 parts (manufactured by Yuka Shell Epoxy Co., Ltd.), 6.2 parts of Coronate HX (trade name, manufactured by Nippon Polyurethane Industry Co., isocyanate equivalent: 332.6) as a urethane prepolymer having an isocyanate equivalent of less than 1000, and a curing agent Are bisphenol A ether dicarboxylic acid hydrazide 0.3 part and dicyandiamide 0.5 part, flaky silver powder 73
And 7.5 parts of TGE as a reaction diluent were mixed to obtain a thermosetting adhesive. The adhesive strength and the amount of warpage of the chip were evaluated and measured in the same manner as in the examples, and the results are shown in Table 1.

【0023】[0023]

【表1】 測定方法は、接着強度については、4mm□シリコンチ
ップとCu基板の間に膜厚が40μmとなるように接着
剤を挟み込み、120℃,120分間で硬化させた後、
240℃における剪断強度を測定した。チップの反り量
は、4×12mmシリコンチップとCu基板の間に膜厚
が20μmとなるように接着剤を挟み込み、150℃,
120分間で硬化させた後、常温におけるチップの反り
量を表面粗さ計にて測定した。
[Table 1] The measuring method is as follows. Regarding the adhesive strength, the adhesive is sandwiched between the 4 mm square silicon chip and the Cu substrate so that the film thickness becomes 40 μm, and after curing at 120 ° C. for 120 minutes,
The shear strength at 240 ° C. was measured. The amount of warpage of the chip was set at 150 ° C. by sandwiching an adhesive between a 4 × 12 mm silicon chip and a Cu substrate so that the film thickness became 20 μm.
After curing for 120 minutes, the amount of warpage of the chip at room temperature was measured with a surface roughness meter.

【0024】[0024]

【発明の効果】本発明によれば、熱硬化性樹脂の主材エ
ポキシ樹脂として特定の2成分を用い、また、2種類の
硬化剤を特定量配合することにより得られるマウント用
ペーストは、低応力性および耐熱信頼性を兼ね有するこ
とが可能となった。
According to the present invention, the mounting paste obtained by using the specific two components as the main epoxy resin of the thermosetting resin and blending the two types of curing agents in a specific amount is low. It has become possible to have both stress properties and heat resistance reliability.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) // C09J 9/02 C09J 9/02 163/02 163/02 175/04 175/04 Fターム(参考) 4J002 CD051 CK022 DA078 EQ026 ET007 FD146 FD147 GJ01 4J036 AD08 DC27 DC31 DC35 FB10 JA06 4J040 EC061 EF151 EF291 EF292 EF301 EF302 HA066 HC15 HC16 JA05 JB02 KA03 KA16 KA32 LA08 LA09 NA20 5F047 BA34 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) // C09J 9/02 C09J 9/02 163/02 163/02 175/04 175/04 F-term (Reference) 4J002 CD051 CK022 DA078 EQ026 ET007 FD146 FD147 GJ01 4J036 AD08 DC27 DC31 DC35 FB10 JA06 4J040 EC061 EF151 EF291 EF292 EF301 EF302 HA066 HC15 HC16 JA05 JB02 KA03 KA16 KA32 LA08 LA09 NA20 5F047 BA34

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)ビスフェノール型エポキシ樹脂、
(B)イソシアネート当量が1000以上であるウレタ
ンプレポリマー、(C)硬化剤として、ヒドラジッドお
よびジシアンジアミド、並びに(D)銀粉を必須成分と
し、ペースト全体に対して、[(A)+(B)]の樹脂
成分が10〜40重量%、(C)硬化剤のヒドラジッド
が1〜10重量%、(C)硬化剤のジシアンジアミドが
1〜10重量%、(D)銀粉が20〜75重量%の割合
に、それぞれ配合されてなることを特徴とする半導体用
マウントペースト。
(1) a bisphenol type epoxy resin,
(B) a urethane prepolymer having an isocyanate equivalent of 1000 or more, (C) hydrazide and dicyandiamide as curing agents, and (D) silver powder as essential components, and [(A) + (B)] with respect to the entire paste. (C) 1-10% by weight of hydrazide as a curing agent, (C) 1-10% by weight of dicyandiamide as a curing agent, and (D) 20-75% by weight of silver powder. A semiconductor mount paste characterized by being blended with each other.
【請求項2】 (A)ビスフェノール型エポキシ樹脂と
(B)のウレタンプレポリマーの配合割合[(A):
(B)]が、重量比率で10:2.5〜10:5の範囲
内である請求項1記載の半導体用マウントペースト。
2. A compounding ratio of (A) a bisphenol type epoxy resin and (B) a urethane prepolymer [(A):
(B)] is a weight ratio within the range of 10: 2.5 to 10: 5, the semiconductor mount paste according to claim 1.
JP2001107360A 2001-04-05 2001-04-05 Mounting paste for semiconductor Pending JP2002305212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001107360A JP2002305212A (en) 2001-04-05 2001-04-05 Mounting paste for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001107360A JP2002305212A (en) 2001-04-05 2001-04-05 Mounting paste for semiconductor

Publications (1)

Publication Number Publication Date
JP2002305212A true JP2002305212A (en) 2002-10-18

Family

ID=18959693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001107360A Pending JP2002305212A (en) 2001-04-05 2001-04-05 Mounting paste for semiconductor

Country Status (1)

Country Link
JP (1) JP2002305212A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175160A (en) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd Photovoltaic device
KR100652830B1 (en) 2005-12-29 2006-12-01 제일모직주식회사 Epoxy resin composition for packaging semiconductor device
JP2007262260A (en) * 2006-03-29 2007-10-11 Nok Corp Adhesive composition
WO2021006164A1 (en) * 2019-07-08 2021-01-14 Dic株式会社 Resin composition, semiconductor sealing material, prepreg, circuit board, build-up film, solder resist, dry film, and printed wiring board
EP4361190A1 (en) * 2022-10-26 2024-05-01 Sika Technology AG Wide temperature window thermosetting polyurethane compositions

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175160A (en) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd Photovoltaic device
US7947895B2 (en) 2003-12-10 2011-05-24 Sanyo Electric Co., Ltd. Photovoltaic device
KR100652830B1 (en) 2005-12-29 2006-12-01 제일모직주식회사 Epoxy resin composition for packaging semiconductor device
JP2007262260A (en) * 2006-03-29 2007-10-11 Nok Corp Adhesive composition
WO2021006164A1 (en) * 2019-07-08 2021-01-14 Dic株式会社 Resin composition, semiconductor sealing material, prepreg, circuit board, build-up film, solder resist, dry film, and printed wiring board
CN113993924A (en) * 2019-07-08 2022-01-28 Dic株式会社 Resin composition, semiconductor sealing material, prepreg, circuit board, build-up film, solder resist, dry film, and printed wiring board
EP4361190A1 (en) * 2022-10-26 2024-05-01 Sika Technology AG Wide temperature window thermosetting polyurethane compositions
WO2024089087A1 (en) * 2022-10-26 2024-05-02 Sika Technology Ag Heat-curable polyurethane compositions with wide temperature window

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