JP2002286790A - Temperature condition imparting device - Google Patents
Temperature condition imparting deviceInfo
- Publication number
- JP2002286790A JP2002286790A JP2001083587A JP2001083587A JP2002286790A JP 2002286790 A JP2002286790 A JP 2002286790A JP 2001083587 A JP2001083587 A JP 2001083587A JP 2001083587 A JP2001083587 A JP 2001083587A JP 2002286790 A JP2002286790 A JP 2002286790A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- temperature
- heat exchange
- side member
- exchange plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、対象物に目的とす
る温度条件を付与可能な温度条件付与装置に関し、半導
体デバイス等の温度特性試験や微生物の培養等のための
加熱又は冷却装置として好都合に利用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature condition providing device capable of providing a target temperature condition to an object, and is advantageously used as a heating or cooling device for temperature characteristic tests of semiconductor devices and the like and cultivation of microorganisms. Used for
【０００２】[0002]
【従来の技術】半導体デバイスであるＩＣの生産におい
ては、ＩＣを通電状態で試験する工程がある。このとき
ＩＣが発熱するため、一定の温度以下になるようにＩＣ
の熱を放熱させる必要がある。又、ＩＣに温度ストレス
をかけて試験するために、これを一定の高温又は低温に
保持して試験する場合がある。そのため従来では、一般
に、ＩＣを基板上のソケットに装着し、これらをボード
キャリアに積載して恒温槽に入れ、その中で目的とする
温度条件の空気を循環させてＩＣに当てるようにいた。2. Description of the Related Art In the production of ICs, which are semiconductor devices, there is a step of testing the ICs in an energized state. At this time, the IC generates heat.
Heat must be dissipated. Further, in order to perform a test by applying a temperature stress to the IC, there is a case where the test is performed while maintaining the IC at a constant high or low temperature. For this reason, conventionally, ICs are generally mounted on sockets on a substrate, loaded on a board carrier, placed in a thermostat, and circulated with air at a desired temperature condition to hit the ICs.
【０００３】ところが、ＩＣの中には空気流を直接受け
ることが好ましくないものがある。又、空気流で冷却も
しくは加熱すると、ＩＣにおいて空気が直接当たる上流
側とそうでない下流側とで温度差が生じてこれが問題に
なる場合がある。そのため、多数のソケットに装着され
た状態のＩＣを全体的に覆うカバーを基板上に取り付
け、カバーの周囲に空気を流し、ＩＣを無風状態で加熱
できるようにした装置が提案されている（特開２０００
−１３７０５４号公報参照）。[0003] However, it is not desirable for some ICs to directly receive an airflow. Further, when cooling or heating is performed by an air flow, a temperature difference may occur between an upstream side where air directly hits the IC and a downstream side where the air does not directly hit, and this may cause a problem. For this reason, there has been proposed an apparatus in which a cover that entirely covers an IC mounted on a number of sockets is mounted on a substrate, air is flowed around the cover, and the IC can be heated in a windless state. Opening 2000
-137054).
【０００４】この装置によれば、無風処理の必要なＩＣ
を試験することができ、又、ＩＣに精度の良い温度条件
を与えることができる。しかしながら、装置が大掛かり
になると共に、恒温槽にカバーの開閉機構を設ける必要
があり、装置全体が複雑化してコスト高になるという問
題がある。[0004] According to this device, an IC that requires no wind processing
Can be tested, and an accurate temperature condition can be given to the IC. However, there is a problem that the device becomes large-scale and a cover opening / closing mechanism needs to be provided in the constant temperature bath, so that the entire device becomes complicated and cost increases.
【０００５】[0005]
【発明が解決しようとする課題】本発明は従来技術に於
ける上記問題を解決し、半導体デバイス等の対象物の処
理における加熱又は冷却時の熱交換性能が良く、無風処
理が可能で、構造が簡単で低コストの温度条件付与装置
を提供することを課題とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems in the prior art, and has a good heat exchange performance at the time of heating or cooling in the processing of an object such as a semiconductor device. It is an object of the present invention to provide a temperature condition providing device which is simple and inexpensive.
【０００６】[0006]
【課題を解決するための手段】本発明は上記課題を解決
するために、請求項１の発明は、閉鎖時に閉鎖された空
間部を形成するように開閉可能で前記空間部に入れられ
る対象物に目的とする温度条件を付与可能なように構成
された一方側部材と他方側部材とを有する温度条件付与
装置であって、前記一方側部材又は前記他方側部材のう
ちの少なくとも何れかは前記対象物と接触する接触面と
熱媒体が流されて前記接触面との間及び前記空間部との
間で熱移動可能なように設けられた熱媒体流路とを有す
ることを特徴とする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, an object of the present invention is to provide an object which is openable and closable so as to form a closed space when closed. A temperature condition providing device having one side member and the other side member configured to be capable of providing a target temperature condition to at least one of the one side member or the other side member. A heat medium flow path is provided such that the heat medium flows through the contact surface in contact with the object and the heat medium flows between the contact surface and the space.
【０００７】請求項２の発明は、上記に加えて、前記温
度条件は複数から成り、前記一方側部材と前記他方側部
材とは分離されていて前記他方側部材が前記接触面と前
記熱媒体流路とを有し、前記他方側部材は前記複数の前
記温度条件に対応して前記複数から成り、前記一方側部
材は前記複数の他方側部材の間を移動可能に形成されて
いる、ことを特徴とする。According to a second aspect of the present invention, in addition to the above, the temperature condition comprises a plurality, and the one-side member and the other-side member are separated, and the other-side member is connected to the contact surface and the heat medium. A flow path, wherein the other-side member is composed of the plurality corresponding to the plurality of temperature conditions, and the one-side member is formed to be movable between the plurality of other-side members. It is characterized by.
【０００８】[0008]
【発明の実施の形態】図１及び図２は、本発明を適用し
た温度条件付与装置の一例である半導体デバイス試験装
置の構成例を示す。本装置は、閉鎖時に閉鎖された空間
部である処理室１を形成するように開閉可能で、処理室
１に入れられる対象物としての半導体デバイス２（以下
単に「デバイス２」という）に目的とする温度条件とし
て例えば−３０℃〜１３０℃程度の温度条件を付与可能
なように構成された一方側部材としてデバイス２の支持
部材となる支持台３と他方側部材としての熱交換プレー
ト４とを有する。1 and 2 show an example of the configuration of a semiconductor device test apparatus which is an example of a temperature condition applying apparatus to which the present invention is applied. This apparatus can be opened and closed so as to form a processing chamber 1 that is a closed space when closed, and a semiconductor device 2 (hereinafter simply referred to as “device 2”) as an object to be put into the processing chamber 1 is used for the purpose. For example, a support base 3 serving as a support member of the device 2 and a heat exchange plate 4 serving as the other member are configured so that a temperature condition of about −30 ° C. to 130 ° C. can be given as a temperature condition. Have.
【０００９】支持台３又は熱交換プレート４のうちの少
なくとも何れかとして本例では熱交換プレート４は、デ
バイス２と接触する接触面４１及び熱媒体流路である熱
媒液流路４２を有する。熱媒液流路４２は、熱媒体であ
る熱媒液が流されて接触面４１との間及び処理室１との
間で熱移動可能なように設けられている。即ち、熱交換
プレート４がアルミニウム等の熱伝導性の良い金属のソ
リッド材でできていて、その内部に熱媒体流路である熱
媒液流路４２が形成されていて、接触面４１及び処理室
１の壁面との間では金属間の熱伝導によって熱が移動
し、これから処理室１内には熱伝達によって熱が移動す
るように構成されている。In this embodiment, the heat exchange plate 4 has at least one of the support base 3 and the heat exchange plate 4 and has a contact surface 41 for contacting the device 2 and a heat medium liquid passage 42 as a heat medium passage. . The heat medium liquid flow path 42 is provided so that a heat medium liquid as a heat medium is flowed and heat can be transferred between the heat medium liquid flow path 42 and the contact surface 41 and the processing chamber 1. That is, the heat exchange plate 4 is made of a solid material of a metal having good heat conductivity such as aluminum, and a heat medium liquid flow path 42 as a heat medium flow path is formed inside the heat exchange plate 4. The heat is transferred between the wall of the chamber 1 and the metal by heat conduction, and then the heat is transferred into the processing chamber 1 by heat transfer.
【００１０】本例のデバイス２は、ＩＣ本体２１の両端
から入出力端子となる多数のリード２２が導設されてい
るＤＩＰ（dual in-line package) タイプのもので、接
触面４１はＩＣ本体２１の上の平坦面に接触するように
なっている。上面が平坦面になっているＱＦＪ( Quad F
lat J-leaded Package )タイプ等の他の形式のＩＣ及び
ＩＣソケットに対しても本発明を適用できることは勿論
である。The device 2 of this embodiment is of a DIP (dual in-line package) type in which a large number of leads 22 serving as input / output terminals are led from both ends of an IC body 21. It comes into contact with a flat surface on the upper surface 21. QFJ (Quad F
Of course, the present invention can be applied to other types of ICs and IC sockets such as a lat J-leaded Package) type.
【００１１】支持台３は、デバイス２と電気的に接続さ
れるプリント基板３１（以下単に「基板３１」という）
を絶縁材から成る台板３２で補強した構造になってい
る。デバイス２は、基板３１に取り付けられたソケット
５に装着されていて、デバイス２のリード２２がソケッ
ト５のコンタクトピン５１（下端部分のみ図示）に接続
されることにより、基板３１と電気的に接続されてい
る。符号３２ａは、台板３２に切り欠かれた端子逃がし
用の溝である。The support 3 is a printed circuit board 31 (hereinafter simply referred to as a “board 31”) electrically connected to the device 2.
Is reinforced by a base plate 32 made of an insulating material. The device 2 is mounted on the socket 5 attached to the substrate 31, and is electrically connected to the substrate 31 by connecting the leads 22 of the device 2 to the contact pins 51 (only the lower end portion is shown) of the socket 5. Have been. Reference numeral 32 a is a terminal escape groove cut out in the base plate 32.
【００１２】処理室１、この中に入れられるデバイス２
及びソケット５は、図２（ｂ）に示す如く、通常基板３
１に縦横に例えば３０個程度の多数個配置されている。
それぞれのソケット５から導出されたコンタクトピン５
１は、前記の如くプリント基板３１の回路と接続されて
いて、更に基板３１の一端側に形成され外部と信号をや
り取りするためのエッジコネクタ３１ａ（図６に例示）
に接続される。Processing chamber 1, device 2 to be placed therein
2 and the socket 5, as shown in FIG.
For example, a large number of about 30 pieces are arranged vertically and horizontally.
Contact pins 5 derived from each socket 5
Reference numeral 1 denotes an edge connector 31a connected to the circuit of the printed circuit board 31 as described above, and further formed on one end of the board 31 for exchanging signals with the outside (illustrated in FIG. 6).
Connected to.
【００１３】接触面４１は、熱伝達率を良好にするため
に、伝熱シート４１ａが貼り付けたられた構造にされる
ことが望ましい。伝熱シート４１ａとしては、厚みが
０．２〜０．５ｍｍ程度で例えば２．５Ｗ／ｍ°Ｋ程度
の十分高い熱伝導率を持つシリコンゴム製のものが好都
合に使用される。It is desirable that the contact surface 41 has a structure to which the heat transfer sheet 41a is attached in order to improve the heat transfer coefficient. As the heat transfer sheet 41a, a sheet made of silicon rubber having a thickness of about 0.2 to 0.5 mm and a sufficiently high thermal conductivity of, for example, about 2.5 W / m ° K is conveniently used.
【００１４】熱交換プレート４は、接触面４１や処理室
１を形成している胴体４３、熱媒液流路４２の両端が開
口し胴体４３との間にガスケット４３ａを介して胴体４
３と結合され熱媒液の入口室及び出口室を形成する両側
のエンドブロック４４、等で構成されている。エンドブ
ロック４４には熱媒液が供給及び排出される熱媒液入口
４４ａ及び出口４４ｂが設けられている。符号４５は、
熱交換プレート４と支持台３との間が閉鎖されたときに
これらの間に介在して処理室１を閉鎖された空間部にす
るためのパッキンである。なお、パッキン４５を熱の良
導体にして、熱交換プレート４と支持台３との間でも熱
移動させるようにしてもよい。The heat exchange plate 4 has a body 43 forming the contact surface 41 and the processing chamber 1, and both ends of the heat transfer medium flow path 42 are open and the body 43 is interposed between the body 43 and the body 43 via a gasket 43 a.
3 and end blocks 44 on both sides forming an inlet chamber and an outlet chamber for the heat transfer fluid. The end block 44 is provided with a heat medium liquid inlet 44a and an outlet 44b through which the heat medium liquid is supplied and discharged. Symbol 45 is
When the space between the heat exchange plate 4 and the support table 3 is closed, the packing is provided between the heat exchange plate 4 and the support base 3 to make the processing chamber 1 a closed space. Note that the packing 45 may be a good conductor of heat, and heat may be transferred between the heat exchange plate 4 and the support 3.
【００１５】図３は熱交換プレート４に熱媒液を供給す
るための加熱兼冷却装置であるサーモユニット６の構成
例を示す。サーモユニット６は、熱媒液循環ポンプ６
１、加熱器６２、これと切り換えて使用される蒸発器６
３、これを含む冷凍回路を構成する圧縮機６４、凝縮器
６５、膨張機構６６、それぞれ熱交換プレート４の熱媒
液入口及び出口４４ａ及び４４ｂに接続される供給管６
７及び戻り管６８、図示しない制御装置等で構成されて
いて、熱媒液を−３０℃程度から１３０℃程度までの間
の一定の温度に制御して熱交換プレート４に循環供給す
ることができる。FIG. 3 shows an example of the construction of a thermo unit 6 which is a heating and cooling device for supplying a heat transfer fluid to the heat exchange plate 4. The thermo unit 6 includes a heat medium circulating pump 6
1. Heater 62, evaporator 6 used by switching
3, a compressor 64, a condenser 65, and an expansion mechanism 66, which constitute a refrigeration circuit including the same, a supply pipe 6 connected to the heat medium liquid inlet and outlet 44a and 44b of the heat exchange plate 4, respectively.
7 and a return pipe 68, a control device (not shown), and the like. The heating medium can be circulated and supplied to the heat exchange plate 4 while being controlled at a constant temperature between about -30 ° C and about 130 ° C. it can.
【００１６】本例の半導体デバイス試験装置では、図２
（ａ）に示す如く、支持台３と熱交換プレート４とが一
体結合されている。即ち、これらの両端に取付座３３及
び４６が形成されていて、これらが貫通軸７で連結され
ている。その結果、熱交換プレート４が支持台３上で矢
印のように回転されることにより、処理室４１が開閉さ
れ、開いたときにデバイス２をソケット５に着脱できる
ようになっている。熱交換プレート４の開閉のための回
転は、取付座４６と貫通軸７とを固定し、貫通軸７を減
速機８を介してモータ９で回転させる等、適当な方法で
行われる。又、生産設備でない実験用の装置等では、人
手で開閉されるものであってもよい。In the semiconductor device test apparatus of this embodiment, FIG.
As shown in (a), the support base 3 and the heat exchange plate 4 are integrally connected. That is, mounting seats 33 and 46 are formed at both ends thereof, and these are connected by the through shaft 7. As a result, the processing chamber 41 is opened and closed by rotating the heat exchange plate 4 on the support base 3 as shown by an arrow, and the device 2 can be attached to and detached from the socket 5 when opened. The rotation for opening and closing the heat exchange plate 4 is performed by an appropriate method such as fixing the mounting seat 46 and the through shaft 7 and rotating the through shaft 7 by the motor 9 via the speed reducer 8. In an experimental device or the like that is not a production facility, the device may be manually opened and closed.
【００１７】図４は支持台３と熱交換プレート４との結
合部分の他の例を示す。（ａ）では、支持台３の四隅に
昇降ガイド３４を設けて、これに沿って熱交換プレート
４をワイヤーによる吊り上げ／吊り下ろし式等の適当な
方法で昇降させるようにしている。（ｂ）では、支持台
３と熱交換プレート４とを図２に示す取付座３３、４６
によって結合しているが、その結合部を両端の二箇所と
し、１台の支持台３に対して２台の熱交換プレート４
（４−１、４−２）を取り付けられるようにしている。
この例では、何れか一方の熱交換プレートが支持台を閉
鎖して使用されることになる。FIG. 4 shows another example of a joint portion between the support base 3 and the heat exchange plate 4. In (a), lifting guides 34 are provided at the four corners of the support base 3 and the heat exchange plate 4 is raised and lowered along the guides by an appropriate method such as a lifting / hanging type using a wire. In (b), the support base 3 and the heat exchange plate 4 are attached to the mounting seats 33 and 46 shown in FIG.
Are connected at two positions at both ends, and two heat exchange plates 4
(4-1, 4-2) can be attached.
In this example, either one of the heat exchange plates is used with the support base closed.
【００１８】図５は、熱交換プレート４の接触面４１の
他の構造例を示す。本例の接触面構造では、（ａ）に示
す如く、熱交換プレート４の胴体４３部分にねじ穴４３
ｂを加工し、（ｂ）〜（ｄ）に示す如く、接触熱交換さ
れるべき対象物の接触面の形状に合わせて、接触面４１
を容易に変更できるようにしている。即ち、（ｂ）で
は、ねじ穴４３ｃと凸部材４３ｄを持つ装着板４３ｅに
伝熱シート４１ａを取り付け、装着板４３ｅを胴体４３
にねじ止めすることにより接触面４１ａを形成するよう
にしている。（ｃ）は対象物の接触面が円弧状である場
合に接触面４１を同じ円弧状にした例を示す。（ｄ）
は、接触面４１を処理室１の幅と同程度の広い幅にする
場合の例で、装着板４３ｅを植え込みねじ４３ｇで胴体
４３に取り付けるようにしている。FIG. 5 shows another example of the structure of the contact surface 41 of the heat exchange plate 4. In the contact surface structure of the present embodiment, as shown in FIG.
b, and as shown in (b) to (d), the contact surface 41 is adjusted according to the shape of the contact surface of the object to be subjected to contact heat exchange.
Can be easily changed. That is, in (b), the heat transfer sheet 41a is attached to the mounting plate 43e having the screw holes 43c and the convex members 43d, and the mounting plate 43e is attached to the body 43.
To form the contact surface 41a. (C) shows an example in which the contact surface 41 has the same arc shape when the contact surface of the object is arc-shaped. (D)
Is an example in which the contact surface 41 is made as wide as the width of the processing chamber 1, and the mounting plate 43e is attached to the body 43 with the implantation screws 43g.
【００１９】図６はデバイス２を複数の温度条件で順次
通電試験できる半導体デバイス試験装置の例を示す。本
装置は、複数の温度条件として例えば−２０℃程度の低
温と常温と１２０℃程度の高温とで順次通電試験を実施
できる装置であり、支持台３と熱交換プレート４とが分
離されていて、熱交換プレート４が図１のものと同様の
接触面４１と熱媒液流路４２とを有し、複数の温度条件
である上記の低温、常温、高温の３温度条件に対応して
３台で構成されている。そして支持台３は、ローラコン
ベア等の搬送ライン１００により、試験工程の順に、３
台の熱交換プレート４（４−１、４−２及び４−３）の
間を実線で示す矢印の方向に移動可能に形成されてい
る。FIG. 6 shows an example of a semiconductor device test apparatus capable of sequentially conducting a current to the device 2 under a plurality of temperature conditions. The present apparatus is an apparatus capable of sequentially conducting an energization test at a plurality of temperature conditions, for example, a low temperature of about −20 ° C., a normal temperature, and a high temperature of about 120 ° C. The support base 3 and the heat exchange plate 4 are separated. The heat exchange plate 4 has a contact surface 41 and a heat transfer medium flow channel 42 similar to those in FIG. 1 and corresponds to the above-mentioned three temperature conditions of low temperature, normal temperature and high temperature. It is composed of a table. The support table 3 is moved in the order of the test process by a transport line 100 such as a roller conveyor.
It is formed so as to be movable between the heat exchange plates 4 (4-1, 4-2 and 4-3) in the direction of the arrow indicated by the solid line.
【００２０】本例の装置では、支持台３が試験工程の順
に移動するので、その移動方向であるＹ1 方向における
それぞれの熱交換プレート４の一定位置Ｐ1 、Ｐ2 、Ｐ
3 の各位置で基板３１とそれぞれの試験回路基板１０
１、１０２、１０３（図６（ｂ）で１０１のみ図示）と
の電気的接続を図る必要がある。そのため、各位置
Ｐ1、Ｐ2 、Ｐ3 にコネクタ着脱装置２００が設けられ
る。又、支持台３にはコネクタ挿抜用の穴３５が設けら
れている。In the apparatus of this embodiment, since the support table 3 moves in the order of the test process, the fixed positions P 1 , P 2 , P of the respective heat exchange plates 4 in the Y 1 direction which is the direction of movement.
The substrate 31 and each test circuit board 10 at each position of 3
It is necessary to make an electrical connection with 1, 102, and 103 (only 101 is shown in FIG. 6B). Therefore, a connector attaching / detaching device 200 is provided at each position P 1 , P 2 , P 3 . The support 3 is provided with a hole 35 for inserting and removing a connector.
【００２１】コネクタ着脱装置２００は、壁面等に固定
されたガイドレール２０１、これによって上下方向にガ
イドされるように設けられた挿抜用シリンダ２０２、そ
のロッド２０２ａ、シリンダ２０２を昇降させる昇降用
シリンダ２０３、等によって構成されている。The connector attaching / detaching apparatus 200 includes a guide rail 201 fixed to a wall or the like, an insertion / extraction cylinder 202 provided so as to be guided vertically by the guide rail 201, a rod 202a thereof, and a lifting / lowering cylinder 203 for raising / lowering the cylinder 202. , Etc.
【００２２】以上のような半導体デバイス試験装置は次
のように使用されその作用効果を発揮する。図１及び図
２又は図４に示すような基板３１を備えた支持台３が一
定位置にあって移動しない装置では、支持台３上の基板
３１は、図６に示すような試験回路基板１０１とコネク
タを介して予め電気的に接続されていて、基板３１には
試験回路基板１０１から電源や信号を供給できるように
なっている。又、サーモユニット６が運転され、加熱器
６２又は蒸発器６３が使用され、熱媒液循環ポンプ６１
により、温度制御された熱媒液が供給管６７、熱交換プ
レート４の熱媒液入口４４ａ、熱媒液流路４２、出口４
４ｂ、戻り管６８、及び加熱器６２又は蒸発器６３を順
次経由するように循環されている。その結果、熱交換プ
レートの胴体４３はほぼ熱媒液と同じ温度に維持されて
いる。The above-described semiconductor device test apparatus is used as described below and exerts its operational effects. In an apparatus in which the support 3 provided with the substrate 31 as shown in FIG. 1 and FIG. 2 or FIG. 4 is not fixed and moves, the substrate 31 on the support 3 is a test circuit board 101 as shown in FIG. The test circuit board 101 can supply power and signals to the board 31 in advance. Further, the thermo unit 6 is operated, the heater 62 or the evaporator 63 is used, and the heat medium circulating pump 61 is used.
As a result, the temperature-controlled heat transfer liquid is supplied to the supply pipe 67, the heat transfer liquid inlet 44 a of the heat exchange plate 4, the heat transfer liquid passage 42, and the outlet 4.
4b, the return pipe 68, and the heater 62 or the evaporator 63 are sequentially circulated. As a result, the body 43 of the heat exchange plate is maintained at substantially the same temperature as the heat medium liquid.
【００２３】この状態では、熱交換プレート４が図２
（ａ）で二点鎖線で示すように時計方向に回転して支持
台３に対してほぼ９０°開いていて、デバイス２は、図
示しないロボット等によって支持台３のソケット５に装
着される。即ち、生産ラインから試験のために搬送され
てきたデバイス２の上面をロボットが吸着支持し、その
リード２２をソケット５のコンタクトピン５１に差し込
むことによってデバイス２をソケット５に装着する。In this state, the heat exchange plate 4 is
As shown by a two-dot chain line in (a), the device 2 is rotated clockwise and is opened substantially 90 ° with respect to the support 3, and the device 2 is mounted on the socket 5 of the support 3 by a robot (not shown) or the like. That is, the upper surface of the device 2 transported for the test from the production line is suction-supported by the robot, and the device 22 is mounted on the socket 5 by inserting the lead 22 into the contact pin 51 of the socket 5.
【００２４】支持台３上の全てのソケットにデバイスを
装着すると、同図の実線で示すように、開いていた熱交
換プレート４を半時計方向に回転させて支持台３に重ね
合わせる。この操作により、伝熱シート４１ａからなる
接触面４１がデバイス２の上面に圧接する。又、支持台
３と熱交換プレート４により、図示の如く処理室１が閉
鎖された空間部として形成される。これにより、デバイ
ス２を目的とする温度条件で通電試験できることにな
る。When the devices are mounted on all the sockets on the support 3, the open heat exchange plate 4 is rotated counterclockwise as shown by the solid line in FIG. With this operation, the contact surface 41 made of the heat transfer sheet 41a is pressed against the upper surface of the device 2. The processing chamber 1 is formed as a closed space by the support table 3 and the heat exchange plate 4 as shown in the figure. As a result, the current test can be performed on the device 2 under the target temperature condition.
【００２５】デバイス２を例えば常温の温度条件で通電
試験するときには、サーモユニット６によって熱媒液を
２０℃程度の常温に冷却して循環させる。デバイス２は
通電によって発熱し、自然放熱によるだけではその温度
が例えば１００℃以上にもなって試験時の温度条件を満
たすことができないが、２０℃程度に温度制御した熱媒
液を循環させることにより、上記の如く熱交換プレート
の胴体４３をほぼ熱媒液と同じ温度にし、主としてデバ
イス２の上面から、接触面４１及び胴体４３を介してそ
の発熱を熱伝導によって直接的に効率良く熱媒液に吸収
させることができる。When the device 2 is subjected to, for example, an electricity test under normal temperature conditions, the heat medium is cooled to a normal temperature of about 20 ° C. by the thermo unit 6 and circulated. The device 2 generates heat when energized, and its temperature becomes, for example, 100 ° C. or more and cannot satisfy the temperature condition at the time of the test only by natural heat radiation. However, it is necessary to circulate a heating medium whose temperature is controlled to about 20 ° C. As described above, the temperature of the body 43 of the heat exchange plate is made substantially the same as the temperature of the heat medium liquid, and the heat generated from the upper surface of the device 2 is directly and efficiently transmitted through the contact surface 41 and the body 43 by heat conduction. Can be absorbed in liquid.
【００２６】又、デバイス２のその他の部分からの放熱
を、熱伝達によって胴体４３の壁面に吸収させ、更に胴
体４３から熱伝導によって熱媒液に吸収させることがで
きる。その結果、デバイス２を冷却して熱媒液の温度に
近い温度に維持し、目的とする温度条件の範囲内でその
通電試験を行うことができる。なお、伝熱シート４１ａ
を接触面にしているので、これをデバイス２の上面に全
面的に均一に接触させ、熱移動を均一にし、デバイス２
の温度分布を良好にすることができる。Further, heat radiation from other portions of the device 2 can be absorbed by the wall surface of the body 43 by heat transfer, and further absorbed by the heat transfer fluid from the body 43 by heat conduction. As a result, the device 2 can be cooled and maintained at a temperature close to the temperature of the heat medium liquid, and the power-on test can be performed within a target temperature range. The heat transfer sheet 41a
Is used as a contact surface, so that the entire surface of the device 2 is uniformly contacted with the upper surface of the device 2 so that the heat transfer is uniform.
Can be improved in temperature distribution.
【００２７】デバイス２を−２０℃程度の低温にしたり
１２０℃程度の高温にして通電試験を行う場合には、同
様に蒸発器６３又は加熱器６２を使用し、それぞれに適
合した温度の熱媒液を循環させる。このときにも常温時
と同様の作用効果を得ることができる。When the device 2 is to be subjected to a current test at a low temperature of about −20 ° C. or a high temperature of about 120 ° C., the evaporator 63 or the heater 62 is used in the same manner, and the heat medium having a temperature suitable for each is used. Circulate the liquid. At this time, the same operation and effect as at normal temperature can be obtained.
【００２８】このような装置によれば、直接接触による
熱伝導を利用するので熱交換性能が良いため、高い冷却
又は加熱効果が得られる。その結果、デバイス２を容易
且つ迅速に目的とする温度条件にすることができる。
又、デバイス２に空気流を当てる冷却方法でないので、
上流側で空気の直接当たる部分と他の部分とで生ずるよ
うなデバイス２内における温度分布が生じない。その結
果、精度の良い温度条件で通電試験を行うことができ
る。又、デバイス２を空冷する必要がないので、空気流
を当てることが適当でないデバイスの試験環境を良い状
態にすることができる。According to such an apparatus, since heat conduction by direct contact is utilized, the heat exchange performance is good, and a high cooling or heating effect can be obtained. As a result, the device 2 can be easily and quickly brought to the target temperature condition.
Also, since it is not a cooling method of applying an air flow to the device 2,
There is no temperature distribution in the device 2 as occurs between the direct part of the air and the other parts on the upstream side. As a result, an energization test can be performed under accurate temperature conditions. Further, since it is not necessary to cool the device 2 by air, it is possible to improve the test environment of the device where it is not appropriate to apply the air flow.
【００２９】又、図２の例では１台の熱交換プレート４
に接触面４１を３０個設けてデバイス２を３０個試験で
きるようにしているが、このように１台の熱交換プレー
トで多数デバイスを加熱又は冷却する場合でも、接触面
４１が熱容量の大きい熱媒液によって加熱又は冷却され
る熱交換プレートの胴体４３に形成されているので、そ
れぞれの接触面間の位置による温度差が生じない。その
結果、接触面に接触したそれぞれのデバイスの全てをほ
ぼ同じ試験温度にすることができる。即ち、デバイス間
での温度むらが発生しない。In the example of FIG. 2, one heat exchange plate 4
Although 30 contact surfaces 41 are provided to allow 30 devices 2 to be tested, even when a large number of devices are heated or cooled by one heat exchange plate, the contact surface 41 has a large heat capacity. Since the heat exchange plate is formed on the body 43 of the heat exchange plate heated or cooled by the medium, there is no difference in temperature between the contact surfaces. As a result, all of the respective devices in contact with the contact surface can be at substantially the same test temperature. That is, temperature unevenness between devices does not occur.
【００３０】更に、以上のような基板３１を含む支持台
３と熱交換プレート４との組合せから成る半導体デバイ
ス試験装置によれば、これを恒温槽に入れる必要がない
ので、恒温槽の場合にその内外間の電気的導通を図るた
めに設けられる中継基板を介することなく、基板３１を
直接試験回路基板１０１に接続して信号の授受を行うこ
とができる。従って、本例の装置は、近年の動作信号の
高速化した半導体デバイスのバーンイン試験にも適した
装置である。Further, according to the semiconductor device test apparatus comprising the combination of the support 3 including the substrate 31 and the heat exchange plate 4 as described above, it is not necessary to put this in a constant temperature bath. The signal can be transmitted and received by connecting the board 31 directly to the test circuit board 101 without using a relay board provided for electrical conduction between the inside and the outside. Therefore, the apparatus of this example is also suitable for a burn-in test of a semiconductor device in which an operation signal has been speeded up in recent years.
【００３１】図６の装置も、基本的には図１、２の装置
と同様に運転されるが、この装置では、それぞれの位置
Ｐ1 〜Ｐ3 でコネクタの着脱操作が行われる。即ち、予
めデバイス２が全てのソケット５に装着されている支持
台３が、搬送ライン１００によって搬送されてＰ1 位置
に到達すると、昇降用シリンダ２０３が作動してガイド
レール２０１に沿って挿抜用シリンダ２０２を下降さ
せ、予め上方に退避していたロッド２０２ａを下降さ
せ、その先端の当接板２０２ｂの下端側をコネクタ挿抜
用の穴３５内に挿入させ、挿抜用シリンダ２０２を作動
させてロッド２０２ａを伸ばし、穴３５を介して基板３
１をその搬送方向であるＹ1 方向に直角のＸ 1 方向に押
し出し、その先端に形成されたエッジコネクタ３１ａを
試験回路基板１０１のコネクタ１０１ａに挿入させ、基
板と試験回路基板との間の電気的導通を確立する。The device shown in FIG. 6 is basically similar to the device shown in FIGS.
Is operated in the same way as
P1~ PThreeThe operation of attaching and detaching the connector is performed. That is,
Device 2 is mounted in all sockets 5
The table 3 is transferred by the transfer line 100 and1position
, The lifting cylinder 203 operates and guides
Lower the insertion / extraction cylinder 202 along the rail 201
And lower the rod 202a that has been retracted in advance.
And insert and remove the connector at the lower end of the contact plate 202b at the end.
Into the insertion hole 35 and operate the insertion / extraction cylinder 202
Then, the rod 202a is extended, and the substrate 3 is inserted through the hole 35.
1 is the transport direction Y1X perpendicular to the direction 1Push in the direction
And remove the edge connector 31a formed at the tip thereof.
It is inserted into the connector 101a of the test circuit board 101, and
Establish electrical continuity between the board and the test circuit board.
【００３２】この状態で、熱媒液が循環していて予め低
温条件にされている低温用の熱交換プレート４（４−
１）を下降させて支持台３上に重ねて、接触面４１をデ
バイス２の上面に圧接させると共に処理室１を閉鎖され
た空間にする。そして、図１の装置と同様にデバイス２
に通電して試験を行う。試験が終了すると、コネクタ着
脱装置２００が今度は前記のときと反対方向に作動し、
コネクタ１０１ａからエッジ３１ａを抜き出し、基板３
１とテストボード１０１との接続を遮断する。その後、
コネクタ着脱装置の昇降用シリンダ２０３を作動させて
当接板２０２ｂを上昇させて穴３５から脱出させる。こ
れにより、支持台３を次の常温位置Ｐ2 に移動可能にす
る。In this state, the heat transfer medium 4 is circulated and the low-temperature heat exchange plate 4 (4-
1) is lowered and overlapped on the support table 3 so that the contact surface 41 is pressed against the upper surface of the device 2 and the processing chamber 1 is made a closed space. Then, as in the device of FIG.
The test is conducted by supplying power to When the test is completed, the connector attaching / detaching device 200 is now operated in the opposite direction as above,
The edge 31a is extracted from the connector 101a and the substrate 3
1 and the test board 101 are disconnected. afterwards,
The lifting / lowering cylinder 203 of the connector attaching / detaching device is actuated to raise the contact plate 202 b and escape from the hole 35. Thereby enabling moving the support table 3 to a next cold position P 2.
【００３３】常温位置Ｐ2 では、熱交換プレート４（４
−２）が予め常温条件にされていて、上記低温試験のと
きと同様に常温試験が行われる。次の高温試験でも同様
である。At the normal temperature position P 2 , the heat exchange plate 4 (4
-2) is previously set to the normal temperature condition, and the normal temperature test is performed in the same manner as in the low temperature test. The same applies to the next high temperature test.
【００３４】以上のような装置によれば、コネクタの着
脱操作及び熱交換プレートの昇降動作が簡単で迅速に行
えること、それぞれの熱交換プレート４（４−１、４−
２、４−３）が予め目的とする温度条件にされていてデ
バイスを直ちにそれぞれの温度に冷却又は加熱できるこ
と、そのときの熱移動が接触面とデバイスとの間の直接
接触を介した熱伝導によって効率良く行われること等に
より、デバイス２を極めて迅速に異なった３つの温度条
件で試験することができる。According to the above-described apparatus, the operation of attaching and detaching the connector and the operation of raising and lowering the heat exchange plate can be performed simply and quickly, and the heat exchange plates 4 (4-1, 4-
(2, 4-3) is pre-set to the desired temperature condition, and the device can be immediately cooled or heated to the respective temperature, and the heat transfer at that time is heat conduction through direct contact between the contact surface and the device. The device 2 can be tested under three different temperature conditions very quickly.
【００３５】即ち、従来の恒温槽における試験では、温
度条件を変更して槽内環境を次の温度条件に到達させる
ための時間が長くかかると共に、それぞれ温度条件にお
いてデバイスをその温度に到達させるまでの時間も多少
長くなるが、本例の装置では、そのような時間が不要又
は十分短くなるので、恒温槽での試験に較べて全体の試
験時間を大幅に短縮することができる。なお、予め異な
った温度条件に調整された複数の恒温槽を設けるとすれ
ば、設備コストが極めて高くなる。又、恒温槽へのデバ
イスの出し入れによる温度乱れの発生や恒温槽内でのデ
バイスの温度到達時間が長いという問題は残る。That is, in a conventional test in a constant temperature bath, it takes a long time to change the temperature condition and bring the environment in the bath to the next temperature condition, and it takes a long time for the device to reach the temperature under each temperature condition. However, in the apparatus of this example, such time is unnecessary or sufficiently short, so that the entire test time can be greatly reduced as compared with the test in the constant temperature bath. If a plurality of constant temperature baths adjusted in advance to different temperature conditions are provided, the equipment cost becomes extremely high. In addition, there remains a problem that the temperature is disturbed by taking the device in and out of the constant temperature bath, and the time required for the device to reach the temperature in the constant temperature bath is long.
【００３６】なお図４（ｂ）の装置の装置によれば、図
４の熱交換プレート４−１に低温熱媒液を通し４−２に
高温熱媒液を流し、同じ支持台３に支持された半導体デ
バイス又はその他の対象物に対して、４−１と４−２と
を短い時間間隔で回転させて交互に接触させることによ
り、温度条件付与装置を冷却と４−２との間で、冷熱衝
撃試験を行うことができる。According to the apparatus shown in FIG. 4B, the low-temperature heat medium is passed through the heat exchange plate 4-1 of FIG. 4-1 and 4-2 are rotated at short time intervals and alternately brought into contact with the semiconductor device or other object that has been set, so that the temperature condition providing device is switched between cooling and 4-2. And a thermal shock test.
【００３７】又図６の装置によれば、上記と同様に熱交
換プレート４−１と４−２とにそれぞれ低温及び高温熱
媒液を流し、位置Ｐ1 とＰ2 との間で搬送ライン１００
を二点鎖線の矢印で示すようにＹ1 方向及びその反対の
Ｙ2 方向に往復移動させることにより、対象物に対して
冷熱衝撃試験を行うことができる。更に、熱交換プレー
ト４−１、４−２、４−３にそれぞれ低温、常温及び高
温熱媒液を流し、位置Ｐ1 、Ｐ2 及びＰ３の間で搬送ラ
イン１００をＹ1 、Ｙ2 方向に往復移動させることによ
り、対象物に対して常温を含めた高低温冷熱衝撃試験を
行うことができる。[0037] According to the apparatus of Matazu 6, respectively in the same manner as described above the heat exchanger plates 4-1 4-2 and flushed with cold and hot heat transfer fluid, the transport between the positions P 1 and P 2 lines 100
The by reciprocating in the Y 1 direction and the opposite Y 2 direction thereof as indicated by the arrows in two-dot chain line, it is possible to perform the thermal shock test relative to the object. Furthermore, low temperature respectively in the heat exchanger plate 4-1, 4-2, and 4-3, flushed with cold and hot heat transfer fluid, the position P 1, P Y 1 the transfer line 100 between 2 and P3, Y 2 direction By reciprocating the object, a high / low temperature thermal shock test including normal temperature can be performed on the object.
【００３８】図７は本発明の温度条件付与装置を生物培
養装置に適用した例を示す。本例の装置は、対象物とし
て動物細胞や微生物等の微小な生物１０を培養するのに
特に好都合な装置であり、処理室１を形成するように開
閉可能な一方側部材としての蓋３´と他方側部材として
の熱交換プレート４とを有する。即ち、本例の装置で
は、図１の装置に較べて熱交換プレート４が下側になっ
ていて支持台と兼用されている。そして、一方側部材又
は他方側部材のうちの少なくとも何れかとして他方側部
材である熱交換プレート４が本例ではシャーレ１１を介
して生物１０と接触する接触面４１と、接触面４１との
間及び処理室１との間で熱移動可能なように設けられた
熱媒液流路４２とが形成されている。FIG. 7 shows an example in which the temperature condition providing device of the present invention is applied to a biological culturing device. The apparatus of this example is a particularly convenient apparatus for culturing microscopic organisms 10 such as animal cells and microorganisms as objects, and a lid 3 ′ as one side member that can be opened and closed to form a processing chamber 1. And a heat exchange plate 4 as the other side member. That is, in the apparatus of the present example, the heat exchange plate 4 is lower than that of the apparatus of FIG. 1 and is also used as a support. The heat exchange plate 4, which is the other side member as at least one of the one side member and the other side member, is between the contact surface 41 that comes into contact with the living thing 10 via the petri dish 11 in this example. And a heat medium liquid flow path 42 provided so as to be capable of transferring heat between the processing chamber 1 and the processing chamber 1.
【００３９】図７では装置の全体を示していないが、こ
のような生物培養装置においても、蓋３´と熱交換プレ
ート４とは図２又は図３に示すように組み合わせられ
る。又、処理室１は通常多数個設けられる。この場合、
図１の装置の熱交換プレート４が本例では蓋３´に相当
し、支持台３が熱交換プレート４に相当することにな
る。従って、本例の装置では蓋３´が回転されて熱交換
プレート４に対して開閉される。Although the entire apparatus is not shown in FIG. 7, the lid 3 'and the heat exchange plate 4 are also combined as shown in FIG. 2 or 3 in such a biological culture apparatus. Further, a large number of processing chambers 1 are usually provided. in this case,
The heat exchange plate 4 of the apparatus of FIG. 1 corresponds to the lid 3 ′ in this example, and the support 3 corresponds to the heat exchange plate 4. Therefore, in the apparatus of this embodiment, the lid 3 ′ is rotated to open and close the heat exchange plate 4.
【００４０】本例の装置においても、従来の恒温槽を使
用した生物培養装置に較べて、図１の半導体デバイス試
験装置の場合と同様に、熱交換性能が良いこと、構造が
簡単で低コストであること、無風の温度環境を付与でき
ること、微小生物に均一な温度環境を付与できること、
等の効果を得ることができる。Also in the apparatus of this embodiment, as compared with the conventional biological culture apparatus using a thermostat, the heat exchange performance is good, the structure is simple and the cost is low, as in the case of the semiconductor device test apparatus of FIG. That it can provide a temperature environment without wind, that it can provide a uniform temperature environment to micro organisms,
And the like can be obtained.
【００４１】[0041]
【発明の効果】以上の如く本発明によれば、請求項１の
発明においては、閉鎖時に閉鎖された空間部を形成する
ように開閉可能な一方側部材と他方側部材とを有する構
成にして、一方側部材又は他方側部材のうちの少なくと
も何れかに、対象物と接触する接触面と、接触面との間
及び空間部との間で熱移動可能なように設けられた熱媒
体流路とを設け、空間部に入れられる対象物に目的とす
る温度条件を付与可能なように構成するので、熱媒体流
路から熱移動を受ける接触面との直接接触により、接触
面と対象物との間で効率良く熱移動させることができ
る。その結果、対象物を速く目的とする温度条件に到達
させることができる。As described above, according to the present invention, according to the first aspect of the present invention, there is provided a structure having one side member and the other side member which can be opened and closed so as to form a closed space when closed. A heat medium flow passage provided in at least one of the one-side member and the other-side member such that heat can be transferred between a contact surface that comes into contact with the target object, the contact surface, and the space. Is provided so that a target temperature condition can be imparted to an object placed in the space, so that the contact surface and the object are brought into direct contact with the contact surface that receives heat transfer from the heat medium flow path. The heat can be efficiently transferred between the two. As a result, the target object can quickly reach the target temperature condition.
【００４２】又、熱媒体流路が閉鎖された空間部との間
で熱移動可能なように設けられ、対象物を閉鎖された空
間部に入れられるので、空間部の温度を熱媒体の温度に
近い温度に保持でき、対象物の接触面以外の表面部分か
らの放熱又は吸熱による温度変化を防止することができ
る。その結果、対象物の全体を均一的に精度良く且つ迅
速に目的とする温度条件にすることができる。Further, the heat medium flow path is provided so as to be capable of transferring heat to and from the closed space, and the object can be placed in the closed space. , And a temperature change due to heat radiation or heat absorption from a surface portion other than the contact surface of the object can be prevented. As a result, the target object can be uniformly and accurately set to the target temperature condition quickly.
【００４３】又、対象物を閉鎖空間内に入れ、接触熱移
動によって目的とする温度条件にすることが可能である
ため、空間内に冷却又は加熱のための気体流れを発生さ
せる必要がない。その結果、特殊仕様の半導体デバイス
や微生物等で気体流を受けることが好ましくない対象物
に良好な環境下で目的とする温度条件を付与することが
できる。Further, since an object can be put in a closed space and the target temperature condition can be set by contact heat transfer, there is no need to generate a gas flow for cooling or heating in the space. As a result, a target temperature condition can be imparted to a target object that is not preferable to receive a gas flow due to a semiconductor device of a special specification, a microorganism, or the like under a favorable environment.
【００４４】更に、請求項１の発明の温度条件付与装置
は、何れか一方又は両方が接触面と熱媒体流路とを有す
る一方側部材及び他方側部材を主要構成部分としている
ので、従来から使用されている恒温槽に較べて基本的に
簡単な構造で低コストの装置である。Further, the temperature condition applying apparatus of the first aspect of the present invention has one or both of the one side member and the other side member having the contact surface and the heat medium flow path as main constituent parts, so that the conventional apparatus is conventionally used. It is basically a simpler structure and lower cost than the thermostat used.
【００４５】請求項２の発明においては、対象物に付与
すべき温度条件が複数から成る場合に、一方側部材と他
方側部材とを分離した構成にして、他方側部材に接触面
と熱媒体流路とを形成し、他方側部材を複数の温度条件
に対応した複数のもので構成し、一方側部材を複数の他
方側部材の間を移動可能に形成するので、複数の他方側
部材のそれぞれの熱媒体流路にそれぞれ異なった付与す
べき温度条件の熱媒体を流し、接触面を予めこれに近い
温度にしておくと共に、一方側部材に対象物を装着して
おくことにより、一方側部材を順次異なった温度の他方
側部材の位置に移動させ、それぞれの位置で一方側部材
又は他方側部材の何れかのうちの相互間の開閉が可能な
方を開閉させ、閉鎖時に空間部を形成し、対象物を迅速
に順次付与すべき温度条件にすることができる。According to the second aspect of the present invention, when there are a plurality of temperature conditions to be applied to the object, one side member and the other side member are separated from each other, and the contact surface and the heat transfer medium are connected to the other side member. The flow path is formed, and the other side member is constituted by a plurality of members corresponding to a plurality of temperature conditions, and the one side member is formed so as to be movable between the plurality of other side members. By flowing a heat medium having a different temperature condition to be applied to each heat medium flow path and keeping the contact surface at a temperature close to this in advance, and mounting the object on one side member, one side The members are sequentially moved to the positions of the other member at different temperatures, and at each position, one of the one member or the other member, which can be opened and closed, can be opened and closed. Form and apply objects quickly and sequentially It is possible to time conditions.
【００４６】この場合、対象物が例えば半導体デバイス
であれば、それぞれの位置で試験装置との間で電気的接
続を断続させる必要があるが、そのような操作は通常コ
ネクタの着脱によって行われるため、周知の適当な方法
で短時間に行うことができる。従って、コネクタの着脱
を含めた全体工程においても、対象物に異なった温度条
件を簡単に能率良く短時間で付与することができる。In this case, if the object is, for example, a semiconductor device, it is necessary to interrupt the electrical connection with the test equipment at each position, but such an operation is usually performed by attaching and detaching a connector. Can be performed in a short time by an appropriate known method. Therefore, different temperature conditions can be easily and efficiently applied to the object in a short time even in the entire process including the attachment and detachment of the connector.
【図１】本発明を適用した温度条件付与装置としての半
導体デバイス試験装置の一部分の断面構造を示す説明図
であるFIG. 1 is an explanatory view showing a cross-sectional structure of a part of a semiconductor device test apparatus as a temperature condition applying apparatus to which the present invention is applied.
【図２】上記装置の全体の断面構造を示す説明図で、
（ａ）は正面状態を示し（ｂ）は平面状態を示す。FIG. 2 is an explanatory view showing the entire cross-sectional structure of the above-described device.
(A) shows a front state and (b) shows a plane state.
【図３】上記装置のためのサーモユニットの構成例を示
す説明図であるFIG. 3 is an explanatory diagram showing a configuration example of a thermo unit for the above device.
【図４】（ａ）及び（ｂ）は上記装置の開閉状態の他の
例を示す説明図であるFIGS. 4A and 4B are explanatory views showing another example of the open / closed state of the device.
【図５】（ａ）乃至（ｄ）は接触面を分離型にするとき
の説明図である。FIGS. 5A to 5D are explanatory diagrams when a contact surface is a separation type.
【図６】（ａ）乃至（ｃ）は上記装置で支持台を移動さ
せるときの構成を示す説明図である。FIGS. 6A to 6C are explanatory diagrams showing a configuration when the support base is moved by the above-described device.
【図７】本発明を適用した温度条件付与装置としての生
物培養装置の一部分の断面構造を示す説明図であるFIG. 7 is an explanatory view showing a cross-sectional structure of a part of a biological culture device as a temperature condition providing device to which the present invention is applied.
１ 処理室（空間部） ２ 半導体デバイス、デバイス（対象
物） ３ 支持台（一方側部材） ３´ 蓋（一方側部材） ４ 熱交換プレート（他方側部材） 4-1 、4-2 、4-3 熱交換プレート（複数の他方側部
材） ４１ 接触面４１ ４２ 熱媒液流
路（熱媒体流路）DESCRIPTION OF SYMBOLS 1 Processing room (space part) 2 Semiconductor device, device (object) 3 Support stand (one side member) 3 'Lid (one side member) 4 Heat exchange plate (other side member) 4-1 4-2, 4 -3 Heat exchange plate (plurality of other side members) 41 Contact surface 41 42 Heat medium liquid flow path (heat medium flow path)
Claims (2)
うに開閉可能で前記空間部に入れられる対象物に目的と
する温度条件を付与可能なように構成された一方側部材
と他方側部材とを有する温度条件付与装置であって、前
記一方側部材又は前記他方側部材のうちの少なくとも何
れかは前記対象物と接触する接触面と熱媒体が流されて
前記接触面との間及び前記空間部との間で熱移動可能な
ように設けられた熱媒体流路とを有することを特徴とす
る温度条件付与装置。1. One side member and the other side member which can be opened and closed so as to form a closed space at the time of closing and which can apply a target temperature condition to an object placed in the space. And a temperature condition providing apparatus having at least one of the one-side member and the other-side member, wherein a contact surface in contact with the object and a heat medium are flowed between the contact surface and the contact surface. A temperature condition providing device, comprising: a heat medium passage provided so as to be capable of transferring heat to and from a space.
側部材と前記他方側部材とは分離されていて前記他方側
部材が前記接触面と前記熱媒体流路とを有し、前記他方
側部材は前記複数の前記温度条件に対応して前記複数か
ら成り、前記一方側部材は前記複数の他方側部材の間を
移動可能に形成されている、ことを特徴とする請求項１
に記載の温度条件付与装置。2. The temperature condition includes a plurality of conditions, wherein the one-side member and the other-side member are separated, the other-side member has the contact surface and the heat medium flow path, and the other-side member has 2. A member comprising a plurality of members corresponding to the plurality of temperature conditions, wherein the one-side member is formed so as to be movable between the plurality of other-side members.
The temperature condition providing device according to 1.
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|---|---|---|---|
| JP2001083587A JP4593815B2 (en) | 2001-03-22 | 2001-03-22 | Temperature condition applying device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083587A JP4593815B2 (en) | 2001-03-22 | 2001-03-22 | Temperature condition applying device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002286790A true JP2002286790A (en) | 2002-10-03 |
| JP4593815B2 JP4593815B2 (en) | 2010-12-08 |
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|---|---|---|---|
| JP2001083587A Expired - Lifetime JP4593815B2 (en) | 2001-03-22 | 2001-03-22 | Temperature condition applying device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006292774A (en) * | 2006-07-31 | 2006-10-26 | Akim Kk | Method and system for adjustment test of electronic component |
| JP2007078388A (en) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Electronic component tester |
| JP2009053082A (en) * | 2007-08-28 | 2009-03-12 | Elpida Memory Inc | Apparatus and method for testing semiconductor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000221234A (en) * | 1999-01-29 | 2000-08-11 | Nec Corp | System and method for burn-in |
| JP2001264381A (en) * | 2000-03-14 | 2001-09-26 | Pfu Ltd | Inspection socket for semiconductor package, inspection system for semiconductor package and control method thereof, and record medium thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086269A (en) * | 1991-03-08 | 1992-02-04 | Hewlett-Packard Company | Burn-in process and apparatus |
| JPH10213624A (en) * | 1997-01-28 | 1998-08-11 | Tescon:Kk | Method and apparatus for burn-in |
| TW369692B (en) * | 1997-12-26 | 1999-09-11 | Samsung Electronics Co Ltd | Test and burn-in apparatus, in-line system using the apparatus, and test method using the system |
| JP3942734B2 (en) * | 1998-06-05 | 2007-07-11 | 株式会社アドバンテスト | Electronic component testing equipment |
-
2001
- 2001-03-22 JP JP2001083587A patent/JP4593815B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000221234A (en) * | 1999-01-29 | 2000-08-11 | Nec Corp | System and method for burn-in |
| JP2001264381A (en) * | 2000-03-14 | 2001-09-26 | Pfu Ltd | Inspection socket for semiconductor package, inspection system for semiconductor package and control method thereof, and record medium thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007078388A (en) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Electronic component tester |
| JP4654852B2 (en) * | 2005-09-12 | 2011-03-23 | パナソニック株式会社 | Electronic component testing equipment |
| JP2006292774A (en) * | 2006-07-31 | 2006-10-26 | Akim Kk | Method and system for adjustment test of electronic component |
| JP4560016B2 (en) * | 2006-07-31 | 2010-10-13 | アキム株式会社 | Electronic component adjustment inspection system |
| JP2009053082A (en) * | 2007-08-28 | 2009-03-12 | Elpida Memory Inc | Apparatus and method for testing semiconductor |
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