JP2002285320A - Method for depositing organic high polymeric thin film - Google Patents
Method for depositing organic high polymeric thin filmInfo
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- JP2002285320A JP2002285320A JP2001089918A JP2001089918A JP2002285320A JP 2002285320 A JP2002285320 A JP 2002285320A JP 2001089918 A JP2001089918 A JP 2001089918A JP 2001089918 A JP2001089918 A JP 2001089918A JP 2002285320 A JP2002285320 A JP 2002285320A
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- raw material
- substrate
- thin film
- material monomers
- film
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- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Polyurethanes Or Polyureas (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は例えば半導体素子の絶縁
膜、パッシベーション膜、プラスチックコンデンサ等の
誘電体に用いられる有機高分子薄膜の形成方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an organic polymer thin film used for a dielectric such as an insulating film, a passivation film and a plastic capacitor of a semiconductor device.
【０００２】[0002]
【従来の技術】従来、合成樹脂皮膜等の有機薄膜の形成
方法としては、（１）原料モノマーを有機溶媒に溶かし
て基板上に塗布、重合させる湿式法、（２）有機高分子
を加熱、蒸発させ、基板上に薄膜形成させる蒸着法、
（３）原料モノマーをプラズマ状態にしてプラズマ中の
基板上で重合させるプラズマ重合法、（４）２種類以上
の原料モノマーを加熱、蒸発させ、基板上で重合させる
蒸着重合法などが知られている。2. Description of the Related Art Conventionally, as a method for forming an organic thin film such as a synthetic resin film, (1) a wet method in which a raw material monomer is dissolved in an organic solvent and coated on a substrate and polymerized, and (2) an organic polymer is heated, Evaporation method to evaporate and form a thin film on the substrate,
(3) A plasma polymerization method in which a raw material monomer is brought into a plasma state and polymerized on a substrate in plasma, and (4) a vapor deposition polymerization method in which two or more raw material monomers are heated and evaporated to be polymerized on a substrate are known. I have.
【０００３】前記従来法において、（１）の原料モノマ
ーを基板上に塗布、重合させる湿式法は、ごく薄い膜が
形成しにくく、また厚さの均一な膜が得難いという不都
合を有する。また（２）の有機高分子を基板上に蒸着さ
せる蒸着法は、重合度が十分でなく、得られた膜の分子
量が低く、絶縁膜やコンデンサ等の誘電体の材料として
使用できない問題がある。In the above-mentioned conventional method, the wet method in which the raw material monomer (1) is applied onto a substrate and polymerized has disadvantages that it is difficult to form a very thin film and it is difficult to obtain a film having a uniform thickness. Further, the vapor deposition method of (2) in which an organic polymer is vapor-deposited on a substrate has a problem that the degree of polymerization is not sufficient, the molecular weight of the obtained film is low, and the film cannot be used as a dielectric material such as an insulating film or a capacitor. .
【０００４】また（３）のプラズマ重合法の場合は、高
温のプラズマ状態となるので原料モノマー自体の分解が
起こり合成高分子の分子設計が困難であり、しかも合成
薄膜が架橋構造を含むので、形成された薄膜が柔軟性に
欠けるという不具合を有する。更に（４）の蒸着重合法
は２種類以上の原料モノマーを基板上で重合反応させる
ため、反応させる個々の原料モノマーの蒸気圧が異なる
場合や各原料モノマーの蒸発温度にわずかでも差があっ
た場合などには、モノマーの量比の制御が難しく、化学
量論的な組成比で重合させるのが難しいという欠点があ
る。In the case of the plasma polymerization method (3), the raw material monomer itself is decomposed due to a high-temperature plasma state, and it is difficult to design a synthetic polymer molecule. In addition, since the synthetic thin film has a crosslinked structure, There is a disadvantage that the formed thin film lacks flexibility. Further, in the vapor deposition polymerization method of (4), since two or more kinds of raw material monomers are polymerized on the substrate, the vapor pressures of the individual raw material monomers to be reacted are different or the evaporation temperature of each raw material monomer is slightly different. In some cases, for example, it is difficult to control the monomer ratio, and it is difficult to perform polymerization at a stoichiometric composition ratio.
【０００５】[0005]
【発明が解決しようとする課題】本発明は前記従来法の
不都合を解消し、化学量論的な組成比で重合させ、安定
した特性を有する電子素材として有効な有機高分子薄膜
の形成方法を提供するものである。SUMMARY OF THE INVENTION The present invention is directed to a method for forming an organic polymer thin film which is effective as an electronic material having stable characteristics by solving the above-mentioned disadvantages of the conventional method and polymerizing it at a stoichiometric composition ratio. To provide.
【０００６】[0006]
【課題を解決するための手段】本発明の有機高分子薄膜
の形成方法は、真空室内において２種以上の原料モノマ
ーをそれぞれ単独に蒸発させて、これらを基板上で原料
モノマーの積層膜を形成した後、真空中または大気中も
しくはガス雰囲気中において前記原料モノマーの積層膜
を加熱重合することにより、基板上に単層もしくは複層
の有機高分子薄膜を形成することを特徴とするものであ
る。According to the method of forming an organic polymer thin film of the present invention, two or more types of raw material monomers are independently evaporated in a vacuum chamber, and these are formed on a substrate to form a laminated film of the raw material monomers. Then, by heating and polymerizing the layered film of the raw material monomer in a vacuum or in the air or in a gas atmosphere, a single-layer or multilayer organic polymer thin film is formed on the substrate. .
【０００７】本発明に使用する原料モノマーとしては例
えば、４，４‘−ジアミノジフェニルメタン、４，４
‘−ジアミノジフェニルエーテル、４、４’−ジアミノ
−３、３‘−ジメチルジフェニルメタン等のジアミン成
分、４，４’−ジフェニルメタンジイソシアネート、
３，３‘−ジメチルジフェニル−４、４’−ジイソシア
ネート、ｐ−フェニレンジイソシアネート等のイソシア
ネート成分、ピロメリット酸二無水物等の酸成分等を使
用することができる。The starting monomers used in the present invention include, for example, 4,4'-diaminodiphenylmethane, 4,4
Diamine components such as' -diaminodiphenyl ether, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-diphenylmethane diisocyanate,
An isocyanate component such as 3,3′-dimethyldiphenyl-4,4′-diisocyanate and p-phenylenediisocyanate, and an acid component such as pyromellitic dianhydride can be used.
【０００８】この発明の有機積層膜を形成するにあたっ
ては、原料モノマーをガラス、石英、金属、セラミック
ス等のるつぼに入れ、真空室内において、るつぼ外周部
を電熱線ヒーターもしくは赤外線ヒーターで加熱して蒸
発させ、基板に薄膜として堆積させる。In forming the organic laminated film of the present invention, the raw material monomers are put into a crucible such as glass, quartz, metal, ceramics, etc., and the outer periphery of the crucible is heated and heated by a heating wire heater or an infrared heater in a vacuum chamber. And deposited on the substrate as a thin film.
【０００９】この時、真空室内で原料モノマーを入れた
るつぼを加熱して、発生した蒸気を基板に蒸着させた
後、このるつぼを真空室から取り出し、次に他の原料モ
ノマーを入れたるつぼを真空室に入れて、これを加熱
し、発生した蒸気を基板に蒸着させて基板表面に積層膜
を形成する。また別の方法として１つの真空室内で、原
料モノマーを入れたるつぼを加熱して、基板に蒸着させ
た後、この基板を取り出し、別の真空室内にこの基板を
取付けてから、他の原料モノマーを入れたるつぼを加熱
して基板に蒸着させ、基板表面に積層膜を形成する方法
がある。At this time, the crucible containing the raw material monomers is heated in the vacuum chamber, and the generated vapor is deposited on the substrate. Then, the crucible is taken out of the vacuum chamber, and then the crucible containing the other raw material monomers is removed. It is placed in a vacuum chamber and heated, and the generated vapor is deposited on the substrate to form a laminated film on the substrate surface. As another method, a crucible containing a raw material monomer is heated and vapor-deposited on a substrate in one vacuum chamber, the substrate is taken out, and the substrate is mounted in another vacuum chamber. There is a method in which a crucible in which is filled is heated and vapor-deposited on a substrate to form a laminated film on the substrate surface.
【００１０】また２個以上のるつぼを同時に真空室内に
設置する場合には、各原料モノマーを交互に加熱して、
発生した蒸気を基板の表面に蒸着させて積層膜を形成す
る。この場合、各るつぼの上部にシャッターを設け、各
るつぼを同時に加熱しながら、それぞれのシャッターを
順次開閉することにより、一種類ずつ原料モノマーを蒸
発させるようにする。なお単層の有機高分子薄膜を形成
する場合には、２種類の原料モノマーを蒸着させ、複数
層の有機高分子薄膜を形成する場合には、３種類以上の
原料モノマーを蒸着させる。When two or more crucibles are simultaneously placed in a vacuum chamber, each raw material monomer is heated alternately,
The generated vapor is deposited on the surface of the substrate to form a laminated film. In this case, a shutter is provided on the top of each crucible, and the respective shutters are sequentially opened and closed while simultaneously heating each crucible, thereby evaporating the raw material monomers one by one. When a single-layer organic polymer thin film is formed, two types of raw material monomers are vapor-deposited. When a plurality of layers of organic polymer thin films are formed, three or more types of raw material monomers are vapor-deposited.
【００１１】また成膜時の真空室内の圧力は、例えば１
０−２〜１０―４Ｐａ程度に設定する。また基板材料
は、成膜後に加熱により層間で重合反応を進行させるた
め、この加熱温度以上の耐熱性を有する材料であれば良
く、例えばガラス、石英、シリコンウエハ、金属板、セ
ラミックス板、ポリイミドフィルムなど３００℃以上の
耐熱性があるのが良い。The pressure in the vacuum chamber at the time of film formation is, for example, 1
Set to 0 -2 10 -4 about Pa. The substrate material may be a material having heat resistance higher than the heating temperature, for example, glass, quartz, a silicon wafer, a metal plate, a ceramic plate, a polyimide film, since a polymerization reaction proceeds between layers by heating after film formation. For example, it is preferable to have heat resistance of 300 ° C. or more.
【００１２】また基板表面に形成された積層膜の加熱
は、大気、窒素やアルゴンガス等のガス雰囲気中、真空
雰囲気中、または真空室から取り出して大気中で行なっ
ても良い。積層膜の加熱温度は、積層膜の厚さ並びに積
層膜の種類、積層膜の層数、基板の材質によって設定す
る。また加熱方法としては、基板に電熱ヒーターを設け
て基板を加熱してその表面に形成された積層膜を加熱重
合させる方法や、積層膜に対向して電熱線ヒーターや赤
外線ヒーターを設置して、発生する熱線により積層膜を
直接加熱して重合させる方法、もしくは積層膜を形成し
た基板を真空室から取り出し、ホットプレートの上に載
せて加熱して積層膜を加熱重合させる方法でも良い。The heating of the laminated film formed on the substrate surface may be performed in the air, in a gas atmosphere such as nitrogen gas or argon gas, in a vacuum atmosphere, or in the air taken out of a vacuum chamber. The heating temperature of the laminated film is set according to the thickness of the laminated film, the type of the laminated film, the number of layers of the laminated film, and the material of the substrate. Also, as a heating method, a method of heating the substrate by providing an electric heater on the substrate and heating and polymerizing the laminated film formed on the surface, or installing a heating wire heater or an infrared heater facing the laminated film, A method in which the laminated film is directly heated and polymerized by the generated heat rays, or a method in which the substrate on which the laminated film is formed is taken out of the vacuum chamber, placed on a hot plate and heated to heat and polymerize the laminated film may be used.
【００１３】[0013]
【実施例】次に本発明の実施例を説明する。図１は本発
明法を実施する装置で、図において１は真空室で、２は
これに接続した真空ポンプである。真空室１内の下方に
は有機薄膜の原料モノマーａ、ｂを蒸発させるための石
英製のるつぼ３ａ、３ｂと、るつぼ周囲に螺旋状に巻き
まわしたヒーター４ａ、４ｂから成る２個の蒸発源が並
設されている。るつぼ３ａ、３ｂの開口部にはシャッタ
ー５ａ、５ｂがそれぞれ設けられ、独自に開閉できるよ
うになっている。Next, embodiments of the present invention will be described. FIG. 1 shows an apparatus for carrying out the method of the present invention, in which 1 is a vacuum chamber, and 2 is a vacuum pump connected thereto. Below the vacuum chamber 1, two evaporation sources including quartz crucibles 3a and 3b for evaporating raw material monomers a and b of the organic thin film and heaters 4a and 4b spirally wound around the crucible. Are juxtaposed. Shutters 5a and 5b are provided in the openings of crucibles 3a and 3b, respectively, so that they can be opened and closed independently.
【００１４】この蒸発源の上方には、これと対向させて
基板６が基板ホルダー７によって下向きに保持されてい
る。更に基板ホルダー７の上面にはヒーター８を配置
し、成膜後に基板７の表面に蒸着した積層膜９を加熱す
るようになっている。また、原料モノマーａ、ｂを入れ
る、るつぼ３ａ、３ｂ内には熱電対１０ａ、１０ｂが挿
入され、原料モノマーａ、ｂの加熱温度を測定するよう
になっている。Above the evaporation source, a substrate 6 is held downward by a substrate holder 7 so as to face the evaporation source. Further, a heater 8 is arranged on the upper surface of the substrate holder 7 to heat the laminated film 9 deposited on the surface of the substrate 7 after the film formation. In addition, thermocouples 10a and 10b are inserted into the crucibles 3a and 3b into which the raw material monomers a and b are put, and the heating temperature of the raw material monomers a and b is measured.
【００１５】（実施例１）上記装置を用いてポリ尿素皮
膜を形成する場合について説明する。るつぼ３ａに、一
方の原料モノマーａとして４，４‘−ジアミノジフェニ
ルメタンを充填する。またるつぼ３ｂに、他方の原料モ
ノマーｂとして４，４‘−ジフェニルメタンジイソシア
ネートを充填し、真空室１の真空度を１×１０―３Ｐａ
に設定する。(Embodiment 1) A case where a polyurea film is formed using the above apparatus will be described. The crucible 3a is filled with 4,4'-diaminodiphenylmethane as one raw material monomer a. Further, the crucible 3b is filled with 4,4′-diphenylmethane diisocyanate as the other raw material monomer b, and the degree of vacuum in the vacuum chamber 1 is set to 1 × 10 −3 Pa
Set to.
【００１６】次いで、ヒーター４ａで原料モノマーａを
１００±２℃に加熱し、蒸発速度が安定した後に、シャ
ッター５ａを開け、４，４‘−ジアミノジフェニルメタ
ンを蒸発させて、基板６の下面に蒸着させる。次にシャ
ッター５ａを閉じて、１Ｐａ程度窒素ガスを導入し、原
料モノマーａの温度が４０℃以下になるのを待って、再
度真空度が１×１０―３Ｐａになるまで真空室１を排気
した。Then, the raw material monomer a is heated to 100 ± 2 ° C. by the heater 4 a, and after the evaporation rate is stabilized, the shutter 5 a is opened, and 4,4′-diaminodiphenylmethane is evaporated to deposit on the lower surface of the substrate 6. Let it. Next, the shutter 5a is closed, a nitrogen gas of about 1 Pa is introduced, and after the temperature of the raw material monomer a becomes 40 ° C. or less, the vacuum chamber 1 is evacuated again until the degree of vacuum becomes 1 × 10 −3 Pa. did.
【００１７】この後、ヒーター４ｂで原料モノマーｂを
７０±２℃に加熱し、蒸発速度が安定した後に、シャッ
ター５ｂを開け、先に基板６の下面に形成した４，４
‘−ジアミノジフェニルメタン層の上に４，４‘−ジフ
ェニルメタンジイソシアネート層を蒸着させて積層膜９
を形成した。After that, the raw material monomer b is heated to 70 ± 2 ° C. by the heater 4b, and after the evaporation rate is stabilized, the shutter 5b is opened and the 4,4
A 4,4'-diphenylmethane diisocyanate layer is deposited on the '-diaminodiphenylmethane layer to form a laminated film 9
Was formed.
【００１８】次にシャッター５ｂを閉じて、真空室１内
に１気圧の窒素を導入し、ヒーター８で積層膜９を２０
０℃で２０分加熱した。Next, the shutter 5b is closed, nitrogen of 1 atm is introduced into the vacuum chamber 1, and the laminated film 9 is
Heat at 0 ° C. for 20 minutes.
【００１９】得られた薄膜を、赤外吸収分光分析により
分析した結果、芳香族型ポリ尿素特有の吸収スペクトル
を示し、コンデンサ材料として使用される有機高分子薄
膜が形成されていることが確認された。The obtained thin film was analyzed by infrared absorption spectroscopy. As a result, it showed an absorption spectrum specific to aromatic polyurea, and it was confirmed that an organic polymer thin film used as a capacitor material was formed. Was.
【００２０】（実施例２） るつぼ３ａに一方の原料モ
ノマーａとして４，４‘−ジフェニルメタンジイソシア
ネートを充填し、るつぼ３ｂに他方の原料モノマーｂと
してピロメリット酸二無水物を充填し、真空室の真空度
を１×１０―３Ｐａに設定した。Example 2 A crucible 3a was filled with 4,4'-diphenylmethane diisocyanate as one raw material monomer a, and a crucible 3b was filled with pyromellitic dianhydride as the other raw material monomer b. The degree of vacuum was set to 1 × 10 −3 Pa.
【００２１】次いで、ヒーター４ａで原料モノマーａを
７０±２℃に加熱し、蒸発速度が安定した後にシャッタ
ー５ａを開けて蒸発させ、基板６の下面に４，４‘−ジ
フェニルメタンジイソシアネート層を形成した。次にシ
ャッター５ａを閉じてから、１Ｐａ程度窒素ガスを導入
し、原料モノマーａの温度が３０℃以下になるのを待っ
て、再度真空度が１×１０―３Ｐａになるまで真空槽を
排気した。この後、ヒーター４ｂで原料モノマーｂを２
００±２℃に加熱し、蒸発速度が安定した後にシャッタ
ー５ｂを開け、先に基板６の下面に形成した４，４‘−
ジフェニルメタンジイソシアネート層の上にピロメリッ
ト酸二無水物層を蒸着させて積層膜９を形成した。Next, the raw material monomer a was heated to 70 ± 2 ° C. by the heater 4 a, and after the evaporation rate was stabilized, the shutter 5 a was opened and evaporated to form a 4,4′-diphenylmethane diisocyanate layer on the lower surface of the substrate 6. . Next, after closing the shutter 5a, nitrogen gas of about 1 Pa is introduced, and after the temperature of the raw material monomer a becomes 30 ° C. or less, the vacuum chamber is evacuated again until the degree of vacuum becomes 1 × 10 −3 Pa. did. Thereafter, the raw material monomer b is added to the
After heating to 00 ± 2 ° C. and the evaporation rate stabilized, the shutter 5 b was opened, and the 4,4′-
A pyromellitic dianhydride layer was deposited on the diphenylmethane diisocyanate layer to form a laminated film 9.
【００２２】次にシャッター５ｂを閉じてから、真空室
１内に１気圧の窒素を導入し、ヒーター８で積層膜を３
００℃で３０分加熱した。得られた薄膜を、赤外吸収分
光分析により分析したところ、ピロメリット型ポリアミ
ド特有の吸収スペクトルを示した。Next, after closing the shutter 5 b, nitrogen of 1 atm is introduced into the vacuum chamber 1,
Heated at 00 ° C. for 30 minutes. When the obtained thin film was analyzed by infrared absorption spectroscopy, it showed an absorption spectrum specific to a pyromellitic polyamide.
【００２３】この後、真空室１内に１気圧の窒素を導入
し、ヒーター８で積層膜を再度、３５０℃で３時間加熱
した。Thereafter, nitrogen at 1 atm was introduced into the vacuum chamber 1 and the laminated film was heated again at 350 ° C. for 3 hours by the heater 8.
【００２４】得られた薄膜は、赤外吸収分光分析により
分析したところ、ピロメリット型ポリイミド特有の吸収
スペクトルを示し、絶縁膜材料として使用される有機高
分子薄膜が形成されていることが確認された。When the obtained thin film was analyzed by infrared absorption spectroscopy, it showed an absorption spectrum peculiar to pyromellitic polyimide, and it was confirmed that an organic polymer thin film used as an insulating film material was formed. Was.
【００２５】[0025]
【発明の効果】以上説明したとおり、本発明の有機高分
子薄膜の形成方法によれば、真空室内において２種以上
の原料モノマーをそれぞれ単独に蒸発させて、基板上で
反応させることなく原料モノマーの積層膜を形成した
後、この積層膜を加熱重合させて有機高分子薄膜を形成
するので、反応させる個々の原料モノマーの蒸気圧が異
なる場合や、各原料モノマーの蒸発温度に差がある場合
などにおいても、化学量論的な組成比で重合させた安定
した特性を有する電子素材として有効な緻密で高純度
で、かつ均一な膜厚の高分子薄膜を容易に形成すること
ができる。As described above, according to the method for forming an organic polymer thin film of the present invention, two or more kinds of raw material monomers are independently evaporated in a vacuum chamber, and the raw material monomers are not reacted on the substrate. After the laminated film is formed, the laminated film is heated and polymerized to form an organic polymer thin film. Therefore, when the vapor pressures of the individual raw material monomers to be reacted are different or when there is a difference in the evaporation temperature of each raw material monomer. Also in such cases, a dense, high-purity, and uniform polymer thin film effective as an electronic material having stable characteristics and polymerized at a stoichiometric composition ratio can be easily formed.
【図１】本発明の有機高分子薄膜を形成する装置の概略
構成を示す断面図である。FIG. 1 is a sectional view showing a schematic configuration of an apparatus for forming an organic polymer thin film of the present invention.
【符号の説明】 １ 真空槽 ２ 真空ポンプ ３ａ、３ｂ るつぼ ４ａ、４ｂ ヒーター ５ａ、５ｂ シャッター ６ 基板 ７ 基板ホルダー ８ ヒーター ９ 積層膜 １０ａ、１０ｂ 熱電対[Description of Signs] 1 vacuum chamber 2 vacuum pump 3a, 3b crucible 4a, 4b heater 5a, 5b shutter 6 substrate 7 substrate holder 8 heater 9 laminated film 10a, 10b thermocouple
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｃ０８Ｇ 73/10 Ｃ０８Ｇ 73/10 (72)発明者 渡部 一博 福島県郡山市待池台１丁目12 福島県ハイ テクプラザ内 Ｆターム(参考） 4J031 CA06 CA20 CE06 CE10 4J034 CA15 CC12 CC22 CC52 CC62 CC67 HA07 HC12 HC61 HC64 HC71 4J043 PA15 QB15 QB26 RA35 SA06 TA22 UA122 UA131 UB011 UB121 VA021 VA022 VA052 VA102 XA40 4K029 BA62 BB02 BC05 BD01 CA11 GA01 5F058 AC10 AD09 AF01 AG01 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) // C08G 73/10 C08G 73/10 (72) Inventor Kazuhiro Watanabe 1-chome Machiikedai, Koriyama-shi, Fukushima Prefecture 12 F-term in Fukushima High-Tech Plaza (reference) 4J031 CA06 CA20 CE06 CE10 4J034 CA15 CC12 CC22 CC52 CC62 CC67 HA07 HC12 HC61 HC64 HC71 4J043 PA15 QB15 QB26 RA35 SA06 TA22 UA122 UA131 UB011 UB121 VA021 VA022 VA052 VA102 BA102 BA102X GA01 5F058 AC10 AD09 AF01 AG01
Claims (1)
ーをそれぞれ単独に蒸発させて、これらを基板上で原料
モノマーの積層膜を形成した後、真空中または大気中も
しくはガス雰囲気中において前記原料モノマーの積層膜
を加熱重合することにより、基板上に単層もしくは複層
の有機高分子薄膜を形成することを特徴とする有機高分
子薄膜の形成方法。2. A method according to claim 1, further comprising: evaporating two or more raw material monomers independently in a vacuum chamber, forming a layered film of the raw material monomers on a substrate, and then evacuating the raw material monomers in a vacuum or in the air or in a gas atmosphere. Forming a single-layer or multi-layer organic polymer thin film on a substrate by heating and polymerizing the laminated film of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001089918A JP2002285320A (en) | 2001-03-27 | 2001-03-27 | Method for depositing organic high polymeric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001089918A JP2002285320A (en) | 2001-03-27 | 2001-03-27 | Method for depositing organic high polymeric thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002285320A true JP2002285320A (en) | 2002-10-03 |
Family
ID=18944774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001089918A Pending JP2002285320A (en) | 2001-03-27 | 2001-03-27 | Method for depositing organic high polymeric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002285320A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006131801A (en) * | 2004-11-08 | 2006-05-25 | Japan Science & Technology Agency | Conductive organic molecule and electronic device using the same, and methods of manufacturing conductive organic molecule and electronic device |
| KR100656181B1 (en) | 2004-08-09 | 2006-12-12 | 두산디앤디 주식회사 | System for continuous deposiotion in OLED process |
| JP2007242704A (en) * | 2006-03-06 | 2007-09-20 | Toshiba Corp | Pattern manufacturing method, pattern substrate and field effect transistor |
| JP2009231783A (en) * | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | Coating device and coating method |
| WO2010032547A1 (en) * | 2008-09-16 | 2010-03-25 | 東京エレクトロン株式会社 | Method and apparatus for forming polymerized film |
-
2001
- 2001-03-27 JP JP2001089918A patent/JP2002285320A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100656181B1 (en) | 2004-08-09 | 2006-12-12 | 두산디앤디 주식회사 | System for continuous deposiotion in OLED process |
| JP2006131801A (en) * | 2004-11-08 | 2006-05-25 | Japan Science & Technology Agency | Conductive organic molecule and electronic device using the same, and methods of manufacturing conductive organic molecule and electronic device |
| JP2007242704A (en) * | 2006-03-06 | 2007-09-20 | Toshiba Corp | Pattern manufacturing method, pattern substrate and field effect transistor |
| JP2009231783A (en) * | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | Coating device and coating method |
| WO2010032547A1 (en) * | 2008-09-16 | 2010-03-25 | 東京エレクトロン株式会社 | Method and apparatus for forming polymerized film |
| JP2010073743A (en) * | 2008-09-16 | 2010-04-02 | Tokyo Electron Ltd | Film-forming method and film-forming device of polymerizing film |
| CN102160156A (en) * | 2008-09-16 | 2011-08-17 | 东京毅力科创株式会社 | Method and apparatus for forming polymerized film |
| KR101236160B1 (en) | 2008-09-16 | 2013-02-22 | 도쿄엘렉트론가부시키가이샤 | Method and apparatus for forming polymerized film |
| US8691338B2 (en) | 2008-09-16 | 2014-04-08 | Tokyo Electron Limited | Polymerized film forming method and polymerized film forming apparatus |
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