JP2002280501A - METHOD FOR FIXING Al-SiC COMPOSITE MATERIAL AND HEAT SINK COMPONENT - Google Patents
METHOD FOR FIXING Al-SiC COMPOSITE MATERIAL AND HEAT SINK COMPONENTInfo
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- JP2002280501A JP2002280501A JP2001078801A JP2001078801A JP2002280501A JP 2002280501 A JP2002280501 A JP 2002280501A JP 2001078801 A JP2001078801 A JP 2001078801A JP 2001078801 A JP2001078801 A JP 2001078801A JP 2002280501 A JP2002280501 A JP 2002280501A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、主に炭化ケイ素
（ＳｉＣ）からなる多孔体に、アルミニウム（Ａｌ）を
主成分とする金属を含浸して形成したアルミニウムと炭
化ケイ素の複合体（Ａｌ−ＳｉＣ系複合体）に関する。
本発明のＡｌ−ＳｉＣ系複合体は、低熱膨張、高熱伝導
特性を有し、放熱基板、ヒートシンク、パッケージなど
半導体装置に用いられる放熱部品に好適なものである。BACKGROUND OF THE INVENTION The present invention relates to a composite of aluminum and silicon carbide (Al-) formed by impregnating a porous material mainly composed of silicon carbide (SiC) with a metal mainly composed of aluminum (Al). SiC-based composite).
The Al-SiC-based composite of the present invention has low thermal expansion and high thermal conductivity, and is suitable for a heat radiating component used for a semiconductor device such as a heat radiating substrate, a heat sink, and a package.
【０００２】[0002]
【従来の技術】近年、産業機器の分野では、半導体スイ
ッチングデバイスを用いて大きな電力を最適な電力に効
率よく交換制御する大電力モジュール装置の開発が進ん
でいる。例えば、電動車輌用インバータとして高電圧、
大電流動作が可能なＩＧＢＴモジュールがある。このよ
うな大電力モジュール化に伴い、半導体チップから発生
する熱も増大している。半導体チップは熱に弱く、発熱
が大きくなれば半導体回路の誤動作や破壊を招くことに
なる。そこで、半導体チップなど電子部品を搭載するた
めの回路基板の裏面にヒートシンクなどの放熱部品を設
けて、放熱部品を介して半導体チップから発生した熱を
外部に発散させ、半導体回路の動作を安定にすることが
行われている。電子部品を搭載するための回路基板とし
ては、窒化ケイ素（Ｓｉ3Ｎ4）、窒化アルミニウム（Ａ
ｌＮ）、酸化アルミニウム（Ａｌ2Ｏ3）などのセラミッ
クス基板が主に用いられている。2. Description of the Related Art In recent years, in the field of industrial equipment, the development of large power module devices for efficiently exchanging and controlling large power to optimum power using semiconductor switching devices has been progressing. For example, high-voltage inverters for electric vehicles,
There is an IGBT module that can operate with a large current. With such a large power module, heat generated from a semiconductor chip is also increasing. Semiconductor chips are susceptible to heat, and large heat generation may cause malfunction or destruction of semiconductor circuits. Therefore, a heat radiating component such as a heat sink is provided on the back side of the circuit board for mounting electronic components such as semiconductor chips, and the heat generated from the semiconductor chip is radiated to the outside through the heat radiating component to stably operate the semiconductor circuit. That is being done. Circuit boards for mounting electronic components include silicon nitride (Si 3 N 4 ), aluminum nitride (A
1N) and a ceramic substrate such as aluminum oxide (Al 2 O 3 ) are mainly used.
【０００３】従来の放熱部品用材料として、銅、モリブ
デン、タングステンなどがある。モリブデンやタングス
テンからなる放熱部品は高価であり、また金属の比重が
大きいため放熱部品の重量が重くなり、放熱部品の軽量
化が望まれる用途には好ましくない。Conventional materials for heat dissipation components include copper, molybdenum, and tungsten. A heat dissipating component made of molybdenum or tungsten is expensive, and the specific gravity of the metal is large, so that the heat dissipating component becomes heavy, which is not preferable for applications in which a lighter heat dissipating component is desired.
【０００４】また、銅からなる放熱部品は、放熱部品と
接合されるセラミックス基板との熱膨張係数の差が大き
いので、放熱部品とセラミックス基板との加熱接合時
や、使用中の熱サイクルにより、はんだ層の破壊、熱流
路の遮断、セラミックス基板の割れを生じやすい。つま
り、放熱部品とセラミックス基板とは、はんだによりろ
う付けされており、ろう材の融点以上に加熱した後、室
温まで冷却される。その際、ろう材の凝固点で互いに固
定され、その後は固定されたまま放熱部品とセラミック
ス基板がそれぞれ固有の熱膨張係数に従って収縮し、互
いの接合部に熱応力および熱歪みが残留するとともに反
りなどの変形を生じる。そして、モジュール装置の使用
時に熱ストレスが繰り返し与えられ、残留熱応力および
熱歪みに重畳されると、はんだ層の疲労破壊による熱流
路の遮断と、機械的に脆い性質を持つセラミックス基板
の割れを生じる。[0004] Further, the heat dissipating component made of copper has a large difference in thermal expansion coefficient between the heat dissipating component and the ceramic substrate to be joined. It is easy to break the solder layer, block the heat flow path, and crack the ceramic substrate. That is, the heat radiating component and the ceramic substrate are brazed by solder, and after being heated to the melting point of the brazing material or more, they are cooled to room temperature. At that time, the brazing material is fixed to each other at the solidification point, and then the heat dissipating component and the ceramic substrate shrink according to their respective thermal expansion coefficients while being fixed, leaving thermal stress and thermal strain at the joints of each other and warping etc. Causes deformation. When the thermal stress is repeatedly applied during use of the module device and superimposed on the residual thermal stress and thermal strain, the thermal flow path is cut off due to the fatigue failure of the solder layer, and the cracking of the ceramic substrate having mechanical brittleness is prevented. Occurs.
【０００５】銅などの従来材に替わる放熱部品用材料と
して、アルミニウムまたはアルミニウム合金中に炭化ケ
イ素を分散させた低熱膨張・高熱伝導特性を有するＡｌ
−ＳｉＣ系複合体が注目されている（特公平７−２６１
７４号、特開昭６４−８３６３４号等参照）。Ａｌ−Ｓ
ｉＣ系複合体の製法としては、炭化ケイ素粉末あるいは
炭化ケイ素繊維で形成された多孔体（プリフォーム）を
用い、この多孔体を型内の空間に配置し、アルミニウム
インゴットを接触させて、窒素雰囲気中で加圧もしくは
非加圧で加熱溶融したアルミニウムを型内の空間に流し
込むことによって、炭化ケイ素の多孔体に含浸させ、冷
却して作製する溶融金属含浸法などがある。この製造方
法によれば、炭化ケイ素の含有量を２０〜９０体積％の
範囲で選択できる。また、炭化ケイ素多孔体の形状の自
由度が高く、複雑な形状の製品をネットシェイプ成形で
きる利点を有する。As a material for heat dissipating parts which replaces conventional materials such as copper, aluminum or aluminum alloy in which silicon carbide is dispersed has low thermal expansion and high thermal conductivity.
-SiC-based composites have attracted attention (Japanese Patent Publication No. Hei 7-261).
No. 74, JP-A-64-83634, etc.). Al-S
As a method for producing an iC-based composite, a porous body (preform) formed of silicon carbide powder or silicon carbide fiber is used, and the porous body is arranged in a space in a mold, and an aluminum ingot is brought into contact with the porous body to form a nitrogen atmosphere. There is a molten metal impregnation method in which aluminum heated and melted under pressure or non-pressure is poured into a space in a mold so that the porous body of silicon carbide is impregnated and cooled. According to this production method, the content of silicon carbide can be selected in the range of 20 to 90% by volume. In addition, there is an advantage that the shape of the porous silicon carbide body has a high degree of freedom, and a product having a complicated shape can be net-shaped.
【０００６】[0006]
【発明が解決しようとする課題】板状の放熱部品を半導
体モジュール装置に組立てる場合、放熱部品に固定用穴
を数箇所設け、固定用穴にボルト、ワッシャなどの固定
部材を装着し、モジュール装置を構成するヒートシンク
などの支持部材に放熱部品を固定することが一般に行わ
れる。その際、固定部材の締め付けにより、放熱部品の
固定用穴の周辺部に多大な締付け応力が負荷される。従
来材料の銅、モリブデン、タングステンなどの金属単体
からなる放熱部品に固定用穴を設ける場合、これらの放
熱部品は全体にわたって十分な強度を有するので、固定
部材の締め付け応力に対する強度的な対処を余り考慮し
なくても比較的容易に設計できる。When assembling a plate-shaped heat dissipating component into a semiconductor module device, several fixing holes are provided in the heat dissipating component, and fixing members such as bolts and washers are mounted in the fixing holes, and the module device is assembled. Is generally fixed to a supporting member such as a heat sink. At that time, a large amount of tightening stress is applied to the periphery of the fixing hole of the heat radiating component due to the tightening of the fixing member. When fixing holes are provided in a heat-dissipating component made of a single metal such as copper, molybdenum, or tungsten, which is a conventional material, since these heat-dissipating components have sufficient strength over the whole, there is much more to deal with with the tightening stress of the fixing member. It can be designed relatively easily without consideration.
【０００７】一方、本発明に係るＡｌ−ＳｉＣ系複合体
は、主に炭化ケイ素からなる多孔体にアルミニウムを主
成分とする金属を含浸して形成されたＡｌ−ＳｉＣ複合
本体部と、Ａｌ−ＳｉＣ複合本体部の表面に形成された
実質的にアルミニウムまたはアルミニウム合金からなる
アルミニウム被覆層から構成されている。本発明に係る
Ａｌ−ＳｉＣ系複合体からなる放熱部品に固定用穴を設
ける場合、固定用穴の内周面にアルミニウム被覆層を形
成させる。そこで、固定用穴部に形成されるＡｌ−Ｓｉ
Ｃ複合本体部とアルミニウム被覆層の境界部が強度的に
弱い箇所となる。このため、固定用穴部に形成されるＡ
ｌ−ＳｉＣ複合本体部とアルミニウム被覆層の境界部の
位置に、ボルト、ワッシャなど固定部材の接触面の外周
縁部がほぼ一致して重なった状態で固定部材を締め付け
ると、境界部からの破壊を招きかねないという問題があ
る。On the other hand, an Al—SiC composite according to the present invention comprises an Al—SiC composite main body formed by impregnating a metal mainly composed of aluminum into a porous body mainly composed of silicon carbide; It is composed of an aluminum coating layer substantially formed of aluminum or an aluminum alloy formed on the surface of the SiC composite main body. When a fixing hole is provided in the heat-dissipating component made of the Al-SiC-based composite according to the present invention, an aluminum coating layer is formed on the inner peripheral surface of the fixing hole. Therefore, the Al-Si formed in the fixing hole is
The boundary between the C composite body and the aluminum coating layer is a weak point in strength. For this reason, A formed in the fixing hole portion
When the fixing member is tightened in a state where the outer peripheral edge of the contact surface of the fixing member such as a bolt and a washer substantially coincides with and overlaps the position of the boundary between the l-SiC composite main body and the aluminum coating layer, breakage from the boundary is caused. There is a problem that may be invited.
【０００８】本発明は、上記の事情に鑑みなされたもの
であって、ヒートシンクなどの支持部材にボルトなどの
固定部材で締め付ける際の外力の印加に対して構造体と
して十分な耐力を備え信頼性に優れるＡｌ−ＳｉＣ系複
合体の固定方法、その固定方法によって固定された放熱
部品および半導体モジュール装置を提供することを目的
とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a sufficient strength as a structure against application of an external force when tightening a support member such as a heat sink with a fixing member such as a bolt, and has a high reliability. It is an object of the present invention to provide a method of fixing an Al-SiC-based composite which is excellent in heat dissipation, a heat radiating component and a semiconductor module device fixed by the fixing method.
【０００９】[0009]
【課題を解決するための手段】本発明のＡｌ−ＳｉＣ系
複合体の固定方法は、主に炭化ケイ素からなる多孔体に
アルミニウムを主成分とする金属を含浸して形成された
Ａｌ−ＳｉＣ複合本体部と、Ａｌ−ＳｉＣ複合本体部の
表面に形成された実質的にアルミニウムまたはアルミニ
ウム合金からなるアルミニウム被覆層を有するＡｌ−Ｓ
ｉＣ系複合体であって、該Ａｌ−ＳｉＣ系複合体に穴内
周面にアルミニウム被覆層を形成した固定用穴を設け、
固定用穴に固定部材を装着することによりＡｌ−ＳｉＣ
系複合体を固定する方法において、装着される固定部材
の接触面の外周縁部の少なくとも一部を、固定用穴部に
形成されるＡｌ−ＳｉＣ複合本体部とアルミニウム被覆
層の境界部より外側のＡｌ−ＳｉＣ複合本体部に対応す
る位置に接触させることを特徴とする。According to the present invention, there is provided a method for fixing an Al-SiC-based composite, wherein the porous body mainly composed of silicon carbide is impregnated with a metal containing aluminum as a main component. Al-S having a main body and an aluminum coating layer substantially made of aluminum or an aluminum alloy formed on the surface of the Al-SiC composite main body
an iC-based composite, wherein the Al-SiC-based composite is provided with a fixing hole having an aluminum coating layer formed on an inner peripheral surface of the hole;
By attaching a fixing member to the fixing hole, Al-SiC
In the method for fixing the system composite, at least a part of the outer peripheral edge of the contact surface of the fixing member to be mounted is located outside the boundary between the Al-SiC composite main body formed in the fixing hole and the aluminum coating layer. In contact with a position corresponding to the Al-SiC composite main body.
【００１０】前記本発明のＡｌ−ＳｉＣ系複合体の固定
方法において、固定用穴部に形成されるＡｌ−ＳｉＣ複
合本体部の端面部に面取り部を設けたことを特徴とす
る。また、固定用穴部に形成されるＡｌ−ＳｉＣ複合本
体部とアルミニウム被覆層において、アルミニウム被覆
層の厚みが２．０ｍｍ以下であることを特徴とする。In the method for fixing an Al-SiC composite according to the present invention, a chamfered portion is provided on an end surface of the Al-SiC composite main body formed in the fixing hole. In the Al-SiC composite main body and the aluminum coating layer formed in the fixing hole, the thickness of the aluminum coating layer is 2.0 mm or less.
【００１１】また他の本発明は、前記本発明の固定方法
によって固定されたＡｌ−ＳｉＣ系複合体からなる放熱
部品である。さらに、前記本発明の固定方法によって固
定されたＡｌ−ＳｉＣ系複合体からなる放熱部品を具備
する半導体モジュール装置である。Another aspect of the present invention is a heat dissipating component comprising an Al-SiC composite fixed by the fixing method of the present invention. Further, the present invention provides a semiconductor module device including a heat-dissipating component made of an Al-SiC-based composite fixed by the fixing method of the present invention.
【００１２】[0012]
【発明の実施の形態】図３はＡｌ−ＳｉＣ系複合体の固
定方法に係る比較例であり、Ａｌ−ＳｉＣ系複合体に設
けた固定用穴周辺部の概略断面図を示す。図３におい
て、Ａｌ−ＳｉＣ系複合体からなる板状の放熱部品１
は、主に炭化ケイ素からなる多孔体にアルミニウムを主
成分とする金属を含浸して形成されたＡｌ−ＳｉＣ複合
本体部２と、Ａｌ−ＳｉＣ複合本体部２の表面に形成さ
れた実質的にアルミニウムまたはアルミニウム合金から
なるアルミニウム被覆層を有する。アルミニウム被覆層
は後述する固定用穴６の内周面のみならず、Ａｌ−Ｓｉ
Ｃ複合本体部２の表面全体にわたって形成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 3 is a comparative example relating to a method for fixing an Al-SiC-based composite, and is a schematic cross-sectional view of the periphery of a fixing hole provided in the Al-SiC-based composite. In FIG. 3, a plate-shaped heat-dissipating component 1 made of an Al—SiC-based composite is shown.
Are an Al-SiC composite main body 2 formed by impregnating a metal mainly composed of aluminum into a porous body mainly composed of silicon carbide; and a substantially formed on the surface of the Al-SiC composite main body 2. It has an aluminum coating layer made of aluminum or an aluminum alloy. The aluminum coating layer is formed not only on the inner peripheral surface of the fixing hole 6 described later, but also on Al-Si.
It is formed over the entire surface of the C composite main body 2.
【００１３】放熱部品１を固定するための固定用穴６を
放熱部品１の外周部に数箇所設ける。固定用穴６の内周
面には所定の厚みのアルミニウム被覆層３を形成させ
る。７は固定用穴６部に形成される、Ａｌ−ＳｉＣ複合
本体部２とアルミニウム被覆層３との境界部である。固
定用穴６にボルトなどの固定部材４を装着して締め付け
ることにより、モジュール装置を構成するヒートシンク
などの支持部材５に放熱部品１を固定する。Several fixing holes 6 for fixing the heat dissipating component 1 are provided on the outer peripheral portion of the heat dissipating component 1. An aluminum coating layer 3 having a predetermined thickness is formed on the inner peripheral surface of the fixing hole 6. Reference numeral 7 denotes a boundary portion between the Al-SiC composite main body portion 2 and the aluminum coating layer 3, which is formed in the fixing hole 6 portion. The fixing member 4 such as a bolt is attached to the fixing hole 6 and tightened, so that the heat dissipating component 1 is fixed to the supporting member 5 such as a heat sink constituting the module device.
【００１４】図３に示すＡｌ−ＳｉＣ系複合体の固定方
法の場合、装着される固定部材４の接触面の外周縁部８
が、固定用穴６部に形成されるＡｌ−ＳｉＣ複合本体部
２とアルミニウム被覆層３の境界部７より内側のアルミ
ニウム被覆層３に対応する位置に接触した状態で、固定
部材４が締め付けられる。このため、締め付けによる外
力の印加に対し、強度の十分でない境界部８から破壊し
やすい。In the case of the method of fixing the Al-SiC-based composite shown in FIG. 3, the outer peripheral edge 8 of the contact surface of the fixing member 4 to be mounted.
Is in contact with a position corresponding to the aluminum coating layer 3 inside the boundary 7 between the Al-SiC composite main body portion 2 and the aluminum coating layer 3 formed in the fixing hole 6, and the fixing member 4 is tightened. . For this reason, it is easy to break from the boundary part 8 with insufficient strength against the application of the external force due to the tightening.
【００１５】図１はＡｌ−ＳｉＣ系複合体の固定方法に
係る本発明例であり、Ａｌ−ＳｉＣ系複合体に設けた固
定用穴周辺部の概略断面図を示す。図１は本発明の最も
特徴とするところを除いて図３と同様の構成である。す
なわち、装着される固定部材４の接触面の外周縁部８
が、固定用穴６部に形成されるＡｌ−ＳｉＣ複合本体部
２とアルミニウム被覆層３の境界部７より外側のＡｌ−
ＳｉＣ複合本体部２に対応する位置に接触した状態で、
固定部材４が締め付けられる。このため、境界部８より
耐力の大きいＡｌ−ＳｉＣ複合本体部２により締め付け
による外力を十分に受けることができるので境界部８か
らの破壊を防止できる。FIG. 1 is an example of the present invention relating to a method for fixing an Al-SiC-based composite, and is a schematic cross-sectional view of a periphery of a fixing hole provided in the Al-SiC-based composite. FIG. 1 has the same configuration as FIG. 3 except for the most characteristic feature of the present invention. That is, the outer peripheral edge 8 of the contact surface of the fixed member 4 to be mounted
Is the Al-SiC composite body 2 formed in the fixing hole 6 and the Al-SiC outside the boundary 7 between the aluminum coating layer 3.
In contact with the position corresponding to the SiC composite main body 2,
The fixing member 4 is tightened. For this reason, since the Al-SiC composite main body 2 having higher proof strength than the boundary portion 8 can sufficiently receive the external force due to the tightening, breakage from the boundary portion 8 can be prevented.
【００１６】また、本発明のＡｌ−ＳｉＣ系複合体の固
定方法において、図２に示すように固定用穴６部に形成
されるＡｌ−ＳｉＣ複合本体部２の端面部に面取り部９
を設けることが締付け応力の集中を緩和できるので好ま
しい。In the method for fixing an Al-SiC composite according to the present invention, as shown in FIG. 2, a chamfered portion 9 is formed on an end surface of the Al-SiC composite main body 2 formed in the fixing hole 6.
Is preferable because the concentration of the tightening stress can be reduced.
【００１７】また、固定用穴６部に形成されるＡｌ−Ｓ
ｉＣ複合本体部２とアルミニウム被覆層３において、ア
ルミニウム被覆層３の厚みが２．０ｍｍ以下であること
が好ましい。アルミニウム被覆層３の厚みが２．０ｍｍ
を超えた場合、アルミニウム被覆層３の占める体積が大
きくなる分、欠陥などの製造不具合が発生しやすくな
り、境界部８からの破壊を防ぐ点で好ましくない。Further, Al-S formed in the fixing holes 6 is formed.
In the iC composite main body 2 and the aluminum coating layer 3, the thickness of the aluminum coating layer 3 is preferably 2.0 mm or less. The thickness of the aluminum coating layer 3 is 2.0 mm
Is exceeded, the volume occupied by the aluminum coating layer 3 is increased, and manufacturing defects such as defects are likely to occur, which is not preferable in that breakage from the boundary portion 8 is prevented.
【００１８】[0018]
【実施例】平均粒径６０μｍ、純度９８％以上の炭化ケ
イ素粉末に結合剤、保形剤の溶媒を加え、これを攪拌機
で混合して炭化ケイ素のスラリーを得た。このスラリー
を所望の形状の金型に注入して成形後、冷却して脱型し
た。これを乾燥して炭化ケイ素の多孔体を作製した。EXAMPLE A solvent for a binder and a shape-retaining agent was added to silicon carbide powder having an average particle size of 60 μm and a purity of 98% or more, and these were mixed with a stirrer to obtain a silicon carbide slurry. This slurry was poured into a mold having a desired shape, formed, cooled, and then demolded. This was dried to produce a porous silicon carbide body.
【００１９】ついで、炭化ケイ素の多孔体と型の内壁と
の間に所定の隙間を確保した状態で、炭化ケイ素の多孔
体を型内に装入した。そして、炭化ケイ素の多孔体を装
入した型内に加熱溶融したアルミニウム合金を圧入し含
浸させた。含浸完了、冷却後、型を解体し、Ａｌ−Ｓｉ
Ｃ系複合体からなる板状の放熱部品を作製した。Then, the silicon carbide porous body was charged into the mold while a predetermined gap was secured between the porous body of silicon carbide and the inner wall of the mold. Then, an aluminum alloy that was heated and melted was press-fitted into a mold in which a porous body of silicon carbide was charged and impregnated. After completion of impregnation and cooling, the mold was dismantled and Al-Si
A plate-shaped heat dissipation component made of a C-based composite was produced.
【００２０】このＡｌ−ＳｉＣ系複合体からなる板状の
放熱部品を厚み２０ｍｍのアルミニウム製のＩＧＢＴモ
ジュール装置を構成する支持部材に固定部材を介して締
め付けた。そして、前述した本発明のＡｌ−ＳｉＣ系複
合体の固定方法を行ない次の評価した。The plate-shaped heat-dissipating component made of the Al-SiC-based composite was fastened to a support member constituting an aluminum IGBT module device having a thickness of 20 mm via a fixing member. Then, the above-described method of fixing the Al—SiC-based composite of the present invention was performed, and the following evaluation was performed.
【００２１】表１に示すように締め付けトルクを設定
し、破壊するまでトルクレンチで締め付けていき、破壊
発生トルクと破壊の起点箇所を比較した。なお、放熱部
品を破壊させ易くするため、放熱部品と支持部材の間に
厚み０．２ｍｍのシム板を挟んだ。また、表１におい
て、「被覆層厚み」は固定用穴の内周面に形成したアル
ミニウム被覆層３の厚みを示す。「破壊トルク」は破壊
が発生した時点のトルクを示す。「破壊起点」箇所中の
「複合本体部」はＡｌ−ＳｉＣ複合本体部２から破壊し
たこと、「境界部」は固定用穴６部に形成されるＡｌ−
ＳｉＣ複合本体部２とアルミニウム被覆層３との境界部
７から破壊したことを示す。Tightening torques were set as shown in Table 1 and tightened with a torque wrench until breakage occurred. The torque at which breakage occurred and the starting point of breakage were compared. Note that a shim plate having a thickness of 0.2 mm was interposed between the heat radiating component and the support member in order to easily break the heat radiating component. In Table 1, “coating layer thickness” indicates the thickness of the aluminum coating layer 3 formed on the inner peripheral surface of the fixing hole. The “breaking torque” indicates the torque at the time when the breaking occurs. The “composite main body” in the “destruction starting point” indicates that the composite body 2 was broken from the Al—SiC composite main body 2, and the “boundary” was Al— formed in the fixing hole 6.
It shows that it was broken from the boundary 7 between the SiC composite main body 2 and the aluminum coating layer 3.
【００２２】 表１ 固定用穴径 被覆層厚み 固定部材径 破壊トルク 破壊起点 （ｍｍ） （ｍｍ） （ｍｍ） （Ｎ・ｍ） 本発明例１ ７ ０．８ １０ ２１ 複合本体部 本発明例２ ７ １．５ １０ １９ 複合本体部 本発明例３ ７ ２．０ １０ １７ 複合本体部 参考 例１ ７ ３．０ １０ １２ 境界部Table 1Fixing hole diameter Coating layer thickness Fixed member diameter Breaking torque Origin of destruction (Mm) (mm) (mm) (N · m) Inventive Example 1 7 0.8 10 21 Composite Body Part Inventive Example 2 7 1.5 10 19 Composite Body Part Inventive Example 3 7 2.0 10 17 Composite body part Reference example 1 7 3.0 10 12 Boundary part
【００２３】表１から、固定用穴６部に形成されるＡｌ
−ＳｉＣ複合本体部２とアルミニウム被覆層３におい
て、アルミニウム被覆層３の厚みが２．０ｍｍ以下のも
のは、Ａｌ−ＳｉＣ複合本体部２から破壊して構造体と
して十分な耐力を有するのでより好ましい形態であるこ
とが確認できた。From Table 1, it can be seen that Al formed in the fixing holes 6 is formed.
Among the SiC composite main body 2 and the aluminum coating layer 3, those having the aluminum coating layer 3 having a thickness of 2.0 mm or less are more preferable because they have sufficient strength as a structure by breaking from the Al—SiC composite main body 2. The form was confirmed.
【００２４】また、図２に示すように固定用穴６部に形
成されるＡｌ−ＳｉＣ複合本体部２の端面部に面取り部
９を設けた実施例と、端面部に面取りが無い参考例のＡ
ｌ−ＳｉＣ系複合体からなる板状の放熱部品を作製し
た。そして、放熱部品に皿ネジ状の穴を加工し、この部
分に超硬製の直径７．８ｍｍの球を載せ、圧縮試験機に
て球を押さえ付けることにより破断荷重と破壊起点箇所
を評価比較した。表２に試験結果を示す。Further, as shown in FIG. 2, an embodiment in which a chamfered portion 9 is provided on the end face of the Al-SiC composite main body 2 formed in the fixing hole 6 and a reference example in which the end face is not chamfered. A
A plate-shaped heat radiation component made of the l-SiC-based composite was produced. Then, a countersunk screw hole is machined in the heat radiating part, a 7.8 mm diameter sphere made of carbide is put on this part, and the sphere is pressed down with a compression tester to evaluate and compare the breaking load and the fracture starting point. did. Table 2 shows the test results.
【００２５】 表２ 面取り形状 せん断荷重平均 破壊起点 （ｍｍ） （ｋＮ） 本発明例５ Ｃ１．０ ６．７ 複合本体部 本発明例６ Ｒ１．０ ６．８ 複合本体部 本発明例７ Ｃ０．５ ６．７ 複合本体部 参考例５ 無し ５．２ 境界部Table 2Chamfer shape Shear load average Origin of destruction (Mm) (kN) Invention Example 5 C1.0 6.7 Composite Body Part Invention Example 6 R1.0 6.8 Composite Body Part Invention Example 7 C0.5 6.7 Composite Body Part Reference Example 5 None 5 .2 Boundary part
【００２６】表２から、固定用穴６部に形成されるＡｌ
−ＳｉＣ複合本体部２の端面部に面取り部９を設けた場
合は、Ａｌ−ＳｉＣ複合本体部２とアルミニウム被覆層
３の境界部７から破壊せず、Ａｌ−ＳｉＣ複合本体部２
から破壊して構造体として十分な耐力を有するのでより
好ましい形態であることが確認できた。From Table 2, it can be seen that Al formed in the fixing holes 6
-When the chamfered portion 9 is provided on the end face of the SiC composite main body 2, the Al-SiC composite main body 2 is not broken from the boundary 7 between the Al-SiC composite main body 2 and the aluminum coating layer 3.
It was confirmed that this was a more preferable form since it had sufficient proof stress as a structural body when broken from.
【００２７】[0027]
【発明の効果】本発明のＡｌ−ＳｉＣ系複合体の固定方
法によれば、ヒートシンクなどの支持部材にボルトなど
の固定部材で締め付ける際の外力の印加に対して構造体
として十分な耐力を備え信頼性に優れる。According to the method for fixing an Al-SiC-based composite of the present invention, the structure has a sufficient proof stress against the application of an external force when tightening the support member such as a heat sink with a fixing member such as a bolt. Excellent reliability.
【図１】本発明例のＡｌ−ＳｉＣ系複合体の固定方法を
示す。FIG. 1 shows a method for fixing an Al—SiC-based composite of the present invention.
【図２】Ａｌ−ＳｉＣ複合本体部２の端面部に面取り部
９を設けたものを示す。FIG. 2 shows an Al-SiC composite main body 2 provided with a chamfer 9 at an end face.
【図３】比較例のＡｌ−ＳｉＣ系複合体の固定方法を示
す。FIG. 3 shows a method for fixing an Al—SiC-based composite of a comparative example.
１ 放熱部品、 ２ Ａｌ−ＳｉＣ複合本体部、 ３
アルミニウム被覆層、４ 固定部材、 ５ 支持部材、
６ 固定用穴、 ７ 境界部、８ 固定部材の接触面
の外周縁部、 ９ 面取り部Reference Signs List 1 heat dissipation component, 2 Al-SiC composite main body, 3
Aluminum coating layer, 4 fixing members, 5 supporting members,
6 fixing hole, 7 boundary, 8 outer peripheral edge of contact surface of fixing member, 9 chamfer
Claims (5)
ニウムを主成分とする金属を含浸して形成されたＡｌ−
ＳｉＣ複合本体部と、Ａｌ−ＳｉＣ複合本体部の表面に
形成された実質的にアルミニウムまたはアルミニウム合
金からなるアルミニウム被覆層を有するＡｌ−ＳｉＣ系
複合体であって、該Ａｌ−ＳｉＣ系複合体に穴内周面に
アルミニウム被覆層を形成した固定用穴を設け、固定用
穴に固定部材を装着することによりＡｌ−ＳｉＣ系複合
体を固定する方法において、装着される固定部材の接触
面の外周縁部の少なくとも一部を、固定用穴部に形成さ
れるＡｌ−ＳｉＣ複合本体部とアルミニウム被覆層の境
界部より外側のＡｌ−ＳｉＣ複合本体部に対応する位置
に接触させることを特徴とするＡｌ−ＳｉＣ系複合体の
固定方法。1. An aluminum alloy formed by impregnating a metal mainly composed of aluminum into a porous body mainly composed of silicon carbide.
An Al-SiC composite having an SiC composite main body and an aluminum coating layer substantially formed of aluminum or an aluminum alloy formed on the surface of the Al-SiC composite main body, wherein the Al-SiC composite is In a method of fixing an Al-SiC-based composite by providing a fixing hole having an aluminum coating layer formed on an inner peripheral surface of the hole and mounting the fixing member in the fixing hole, an outer peripheral edge of a contact surface of the fixing member to be mounted. Wherein at least a part of the part is brought into contact with a position corresponding to the Al-SiC composite main body outside the boundary between the Al-SiC composite main body formed in the fixing hole and the aluminum coating layer. -Method for fixing SiC-based composite.
Ｃ複合本体部の端面部に面取り部を設けたことを特徴と
する請求項１に記載のＡｌ−ＳｉＣ系複合体の固定方
法。2. An Al-Si formed in the fixing hole.
The method for fixing an Al-SiC-based composite according to claim 1, wherein a chamfered portion is provided at an end surface of the C composite main body.
Ｃ複合本体部とアルミニウム被覆層において、アルミニ
ウム被覆層の厚みが２．０ｍｍ以下であることを特徴と
する請求項１または２に記載のＡｌ−ＳｉＣ系複合体の
固定方法。3. An Al-Si formed in the fixing hole.
The method for fixing an Al-SiC-based composite according to claim 1 or 2, wherein the thickness of the aluminum coating layer in the C composite main body and the aluminum coating layer is 2.0 mm or less.
ＳｉＣ系複合体の固定方法によって固定されたことを特
徴とするＡｌ−ＳｉＣ系複合体からなる放熱部品。4. The Al- according to claim 1, wherein
A heat-dissipating component comprising an Al-SiC-based composite, which is fixed by a fixing method of the SiC-based composite.
ＳｉＣ系複合体の固定方法によって固定されたＡｌ−Ｓ
ｉＣ系複合体からなる放熱部品を具備することを特徴と
する半導体モジュール装置。5. The Al- according to claim 1, wherein
Al-S fixed by the fixing method of the SiC-based composite
A semiconductor module device comprising a heat dissipating component made of an iC-based composite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001078801A JP2002280501A (en) | 2001-03-19 | 2001-03-19 | METHOD FOR FIXING Al-SiC COMPOSITE MATERIAL AND HEAT SINK COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001078801A JP2002280501A (en) | 2001-03-19 | 2001-03-19 | METHOD FOR FIXING Al-SiC COMPOSITE MATERIAL AND HEAT SINK COMPONENT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002280501A true JP2002280501A (en) | 2002-09-27 |
Family
ID=18935363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001078801A Pending JP2002280501A (en) | 2001-03-19 | 2001-03-19 | METHOD FOR FIXING Al-SiC COMPOSITE MATERIAL AND HEAT SINK COMPONENT |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002280501A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009116245A1 (en) * | 2008-03-19 | 2009-09-24 | 株式会社アライドマテリアル | Heat spreader and method for manufacturing the same |
| JP2012254891A (en) * | 2011-06-08 | 2012-12-27 | Denki Kagaku Kogyo Kk | Aluminum-silicon carbide-based composite, and method for manufacturing the same |
| JP7487695B2 (en) | 2021-03-26 | 2024-05-21 | 三菱電機株式会社 | Semiconductor Device |
-
2001
- 2001-03-19 JP JP2001078801A patent/JP2002280501A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009116245A1 (en) * | 2008-03-19 | 2009-09-24 | 株式会社アライドマテリアル | Heat spreader and method for manufacturing the same |
| JPWO2009116245A1 (en) * | 2008-03-19 | 2011-07-21 | 株式会社アライドマテリアル | Heat spreader and manufacturing method thereof |
| JP4999983B2 (en) * | 2008-03-19 | 2012-08-15 | 株式会社アライドマテリアル | Heat spreader and manufacturing method thereof |
| JP2012254891A (en) * | 2011-06-08 | 2012-12-27 | Denki Kagaku Kogyo Kk | Aluminum-silicon carbide-based composite, and method for manufacturing the same |
| JP7487695B2 (en) | 2021-03-26 | 2024-05-21 | 三菱電機株式会社 | Semiconductor Device |
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