JP2002280469A - Vacuum sealing method of package - Google Patents
Vacuum sealing method of packageInfo
- Publication number
- JP2002280469A JP2002280469A JP2001083098A JP2001083098A JP2002280469A JP 2002280469 A JP2002280469 A JP 2002280469A JP 2001083098 A JP2001083098 A JP 2001083098A JP 2001083098 A JP2001083098 A JP 2001083098A JP 2002280469 A JP2002280469 A JP 2002280469A
- Authority
- JP
- Japan
- Prior art keywords
- adsorbent
- package
- temperature
- cover
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、加速度セ
ンサやジャイロ、共振子等の電子部品に用いる真空封止
を必要とするパッケージの真空封止方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for vacuum sealing a package that requires vacuum sealing for use in electronic components such as acceleration sensors, gyros, and resonators.
【０００２】[0002]
【従来の技術】従来の電子部品のパッケージとして電子
部品の動作特性を良好にするために、パッケージ内を真
空状態にする構成が知られている。2. Description of the Related Art As a conventional package of an electronic component, there is known a configuration in which the interior of the package is evacuated in order to improve the operating characteristics of the electronic component.
【０００３】このパッケージ内の真空状態を確保する方
法として、パッケージに設けた小さな貫通孔からパッケ
ージ内の空気を排出し、パッケージ内部を真空にした
後、貫通孔と対応する位置に抵抗溶接で薄板を固着する
方法がある（例えば、特開平９−６４２２１号公報）。As a method for maintaining a vacuum state in the package, air in the package is discharged from a small through hole provided in the package, the inside of the package is evacuated, and a thin plate is formed by resistance welding at a position corresponding to the through hole. (For example, JP-A-9-64221).
【０００４】また、別の方法として、大気圧状態でパッ
ケージ内にガスを吸着する吸着材を設けた状態で封止
し、パッケージ内の内部ガスを吸着する方法も知られて
いる（例えば、特開２０００−１１１３４７号公報）。[0004] As another method, a method is known in which the package is sealed in a state where an adsorbent for adsorbing gas is provided in the package at atmospheric pressure, and the internal gas in the package is adsorbed (for example, a special method). JP 2000-11347 A).
【０００５】[0005]
【発明が解決しようとする課題】ところが、前者の方法
では、真空封止には真空排気装置を有する複雑で高価な
設備を使用しなければならず、真空封止工程も複雑にな
ることから、真空封止費用の増大につながっていた。However, in the former method, complicated and expensive equipment having a vacuum evacuation device must be used for vacuum sealing, and the vacuum sealing process becomes complicated. This has led to an increase in vacuum sealing costs.
【０００６】また、後者の吸着材を用いた方法では、初
期状態において吸着材は窒化膜で覆われた不活性な状態
のため、ガス吸着可能な状態に吸着材を活性化する必要
があった。そして、吸着材を活性化する際、パッケージ
全体が高温になり、内部に固定されたデバイスや、パッ
ケージ自体にダメージを与える可能性があった。In the latter method using an adsorbent, since the adsorbent is in an inactive state covered with a nitride film in an initial state, it is necessary to activate the adsorbent in a gas adsorbable state. . When the adsorbent is activated, the temperature of the entire package becomes high, and there is a possibility that the device fixed inside or the package itself may be damaged.
【０００７】本発明は前述した事情に鑑みてなされたも
のであって、その目的は、製造工程を簡単にでき、電子
部品等の熱的ダメージを抑制し、パッケージ内の高真空
状態を容易に確保できるパッケージの真空封止方法を提
供することにある。The present invention has been made in view of the above-mentioned circumstances, and has as its object to simplify the manufacturing process, suppress thermal damage to electronic components and the like, and easily maintain a high vacuum state in a package. An object of the present invention is to provide a vacuum sealing method for a package that can be secured.
【０００８】[0008]
【課題を解決するための手段】前記目的を達成するため
に、請求項１に記載の発明では、デバイスが固定された
ベースと、該ベース上に被せられるカバーと、カバー内
に取付けられる吸着材と、該吸着材を前記カバーに固定
する固定具とを備え、パッケージングされるパッケージ
の真空封止方法であって、前記ベースに前記カバーを大
気圧状態で封止し、前記カバー側より前記吸着材が大気
と反応を開始する温度まで加熱し、その反応熱により前
記吸着材を活性化し、前記パッケージの内部に存在する
ガスを前記吸着材に吸着させ、前記パッケージの内部を
真空にする。この発明によれば、吸着材の活性化に吸着
材の反応熱が利用されることにより、従来のようにパッ
ケージを介して外部から多くの熱を加える必要はなくな
る。従って、外部からの加熱によるパッケージ等の破損
が抑制される。In order to achieve the above object, according to the first aspect of the present invention, a base to which a device is fixed, a cover placed on the base, and an adsorbent mounted in the cover are provided. And a fixture for fixing the adsorbent to the cover, a method for vacuum sealing a package to be packaged, wherein the cover is sealed to the base under atmospheric pressure, and The adsorbent is heated to a temperature at which the adsorbent starts reacting with the atmosphere, and the heat of the reaction activates the adsorbent, adsorbs gas present inside the package to the adsorbent, and evacuates the interior of the package. According to the present invention, since the heat of reaction of the adsorbent is used to activate the adsorbent, it is not necessary to apply much heat from the outside via the package as in the related art. Therefore, breakage of the package or the like due to external heating is suppressed.
【０００９】請求項２に記載の発明では、請求項１に記
載の発明において、前記吸着材と大気との反応開始温度
が、前記パッケージの耐熱温度より低く設定されてい
る。この発明によれば、吸着材はパッケージの耐熱温度
より低い反応開始温度まで加熱された際に、大気と反応
を開始する。従って、パッケージを反応開始温度以上に
加熱する必要はなく、パッケージ等の破損がより抑制さ
れる。According to a second aspect of the present invention, in the first aspect of the present invention, a reaction start temperature of the adsorbent and the atmosphere is set lower than a heat resistant temperature of the package. According to the present invention, when the adsorbent is heated to a reaction start temperature lower than the heat resistant temperature of the package, it starts reacting with the atmosphere. Therefore, it is not necessary to heat the package to a temperature equal to or higher than the reaction start temperature, and damage to the package and the like is further suppressed.
【００１０】請求項３に記載の発明では、請求項１又は
請求項２に記載の発明において、前記固定具は、前記反
応開始温度以上で変形可能に形成され、前記吸着材は、
初期状態において、前記カバーと当接した状態で前記固
定具に支持され、前記吸着材が反応開始温度以上になる
と前記固定具が変形を開始して前記カバーから離れて支
持される。この発明によれば、吸着材自体の反応熱がパ
ッケージに伝わるのがより抑制され、パッケージ等の熱
による破損がより抑制される。According to a third aspect of the present invention, in the first or second aspect of the invention, the fixture is formed so as to be deformable at a temperature equal to or higher than the reaction start temperature, and the adsorbent is
In the initial state, the fixture is supported by the fixture in contact with the cover, and when the adsorbent becomes higher than the reaction start temperature, the fixture starts to deform and is separated from the cover and supported. According to the present invention, the transfer of the reaction heat of the adsorbent itself to the package is further suppressed, and the damage of the package and the like due to heat is further suppressed.
【００１１】[0011]
【発明の実施の形態】（第１の実施の形態）以下、本発
明を半導体装置に具体化した第１の実施の形態を図１〜
図３に従って説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIGS. 1 to 1 show a first embodiment of the present invention embodied in a semiconductor device.
This will be described with reference to FIG.
【００１２】図３に示すように、半導体装置１は、例え
ばＳＰＣ（鉄）や商品名コバール（Ｆｅ−Ｎｉ−Ｃｏ）
などの材質からなるベース２と、例えばＳＰＣ（鉄）等
の材質からなるカバー３とが設けられ、カバー３は抵抗
溶接によりベース２に溶接され、気密状態で封止されて
いる。ベース２とカバー３とで、パッケージ４が構成さ
れている。As shown in FIG. 3, the semiconductor device 1 is made of, for example, SPC (iron) or Kovar (Fe-Ni-Co).
And a cover 3 made of a material such as SPC (iron). The cover 3 is welded to the base 2 by resistance welding and is hermetically sealed. A package 4 is constituted by the base 2 and the cover 3.
【００１３】ベース２の中央付近には、封止対象となる
デバイス５が銀ペーストや金を用いて固定され、ベース
２の所定箇所には、ガラス材からなるシール部６が１カ
所以上形成され、電極７がシール部６により、ハーメチ
ックシールで固定されている。A device 5 to be sealed is fixed in the vicinity of the center of the base 2 using silver paste or gold, and a predetermined portion of the base 2 is formed with one or more sealing portions 6 made of a glass material. The electrode 7 is fixed with a hermetic seal by the seal portion 6.
【００１４】デバイス５と電極７とが、金もしくはアル
ミ材からなる細線８で結線され、デバイス５の電気的信
号の取り出しが電極７により可能となるように構成され
ている。The device 5 and the electrode 7 are connected by a thin wire 8 made of gold or aluminum material, so that the electrode 7 can take out an electric signal of the device 5.
【００１５】カバー３の内部のベース２と対向する側
（図３の上側）には、吸着材９を支持する固定具１０が
２個設けられ、吸着材９は、カバー３と近接するように
固定具１０に支持されている。吸着材９は、通常ゲッタ
ーと称されるもので、気体をその表面に不可逆的に吸着
する機能を有し、例えばジルコニウムを主成分とする合
金で形成されている。パッケージ４の内部ガスが、この
吸着材９に吸着されることにより、パッケージ４は真空
封止されている。On the side of the cover 3 facing the base 2 (upper side in FIG. 3), two fixtures 10 for supporting the adsorbent 9 are provided, and the adsorbent 9 is brought close to the cover 3. It is supported by the fixture 10. The adsorbent 9 is generally called a getter, has a function of irreversibly adsorbing a gas on its surface, and is made of, for example, an alloy mainly containing zirconium. The package 4 is vacuum-sealed by the internal gas of the package 4 being adsorbed by the adsorbent 9.
【００１６】次に、半導体装置１の製造方法について説
明する。図１（ａ）に示すように、ベース２に形成され
たシール部６に、電極７がハーメチックシールにより固
定される。Next, a method for manufacturing the semiconductor device 1 will be described. As shown in FIG. 1A, an electrode 7 is fixed to a seal portion 6 formed on the base 2 by a hermetic seal.
【００１７】次に、図１（ｂ）に示すように、ベース２
の中央付近にデバイス５が銀ペーストや金を用いて固定
され、デバイス５と電極７とが細線８で結線される。図
１（ｃ）に示すように、吸着材９が固定具１０により支
持された状態で、大気圧状態において、カバー３がベー
ス２の所定位置に配置される。そして、図１（ｄ）に示
すように、カバー３がベース２に抵抗溶接により気密状
態で封止される。大気には、吸着材９と所定温度以上で
反応する気体成分、例えば酸素が含まれる。なお、この
溶接時には、接合面のみ選択的に加熱され、溶着される
ため、デバイス５やベース２、カバー３などには熱的影
響はない。Next, as shown in FIG.
The device 5 is fixed to the vicinity of the center using silver paste or gold, and the device 5 and the electrode 7 are connected by a thin wire 8. As shown in FIG. 1C, the cover 3 is arranged at a predetermined position on the base 2 in an atmospheric pressure state with the adsorbent 9 supported by the fixture 10. Then, as shown in FIG. 1D, the cover 3 is hermetically sealed to the base 2 by resistance welding. The atmosphere contains a gas component that reacts with the adsorbent 9 at a predetermined temperature or higher, for example, oxygen. During this welding, only the joint surface is selectively heated and welded, so that there is no thermal effect on the device 5, the base 2, the cover 3, and the like.
【００１８】次に、図１（ｅ）に示すように、カバー３
の吸着材９の取付面の外側が、ヒータープレート１１に
接触する状態で加熱が行われる。図２は、外部加熱温
度、吸着材温度及びパッケージ温度の時間変化と、内部
真空度の時間変化とを示すグラフである。図２に示すよ
うに、外部加熱（ヒータープレート１１）による加熱
は、吸着材反応開始温度よりわずかに高い温度まで行わ
れる。パッケージ４がヒータープレート１１により徐々
に加熱されると、吸着材９も徐々に加熱される。吸着材
反応開始温度まで吸着材９が加熱されると、パッケージ
４の内部に存在している吸着材９と反応する気体成分
と、吸着材９とが化学反応して、反応熱が発生する。吸
着材９は、反応熱により昇温され、吸着材活性化温度よ
り高い温度まで昇温され、吸着材活性化温度を超えると
活性化される。Next, as shown in FIG.
The heating is performed in a state where the outside of the mounting surface of the adsorbent 9 contacts the heater plate 11. FIG. 2 is a graph showing a time change of the external heating temperature, the adsorbent temperature, and the package temperature, and a time change of the internal vacuum degree. As shown in FIG. 2, the heating by the external heating (heater plate 11) is performed to a temperature slightly higher than the adsorbent reaction start temperature. When the package 4 is gradually heated by the heater plate 11, the adsorbent 9 is also gradually heated. When the adsorbent 9 is heated up to the adsorbent reaction start temperature, a gas component reacting with the adsorbent 9 existing inside the package 4 chemically reacts with the adsorbent 9 to generate reaction heat. The temperature of the adsorbent 9 is increased by the heat of reaction, is increased to a temperature higher than the activation temperature of the adsorbent, and is activated when the temperature exceeds the activation temperature of the adsorbent.
【００１９】図２のグラフに示すように、吸着材９と気
体成分との反応により、パッケージ４の内部が、所定の
真空度まで減圧される。次に、吸着材９が活性化される
と、吸着材９の表面の窒化膜は、吸着材９の内部に拡散
し、吸着材９の表面に新しい活性化面（気体吸着面）を
露出し、気体に対する吸着作用が発現され、パッケージ
４の内部がさらに減圧されて高真空に到達する。As shown in the graph of FIG. 2, the inside of the package 4 is reduced in pressure to a predetermined degree of vacuum by the reaction between the adsorbent 9 and the gas component. Next, when the adsorbent 9 is activated, the nitride film on the surface of the adsorbent 9 diffuses into the adsorbent 9 to expose a new activation surface (gas adsorption surface) on the surface of the adsorbent 9. Then, an adsorbing effect on the gas is developed, and the inside of the package 4 is further reduced in pressure to reach a high vacuum.
【００２０】ヒータープレート１１からの加熱は、図２
に示すように、吸着材反応開始温度より少し高い温度で
保持される。また、パッケージ４の温度は、吸着材９の
反応熱により、外部加熱温度よりわずかに高い温度まで
昇温されるが、吸着材９がカバー３に当接しないように
形成され、吸着材反応開始温度がベース材耐熱温度より
低く設定されているため、ベース材の耐熱温度に到達し
ない。Heating from the heater plate 11 is performed as shown in FIG.
As shown in (2), it is maintained at a temperature slightly higher than the adsorbent reaction start temperature. The temperature of the package 4 is raised to a temperature slightly higher than the external heating temperature by the reaction heat of the adsorbent 9, but the adsorbent 9 is formed so as not to come into contact with the cover 3, and the adsorbent reaction starts. Since the temperature is set lower than the heat resistance temperature of the base material, the temperature does not reach the heat resistance temperature of the base material.
【００２１】パッケージ４内の吸着材９と化学反応する
気体成分が消耗すると、吸着材９の反応は停止し、吸着
材９の温度の下降が開始される。また、吸着材９の温度
の下降が開始された時点で、ヒータープレート１１によ
る加熱が停止される。なお、最高到達温度は、パッケー
ジ４の容積と吸着材９の体積とにより決定される。When the gas component chemically reacting with the adsorbent 9 in the package 4 is exhausted, the reaction of the adsorbent 9 stops and the temperature of the adsorbent 9 starts decreasing. When the temperature of the adsorbent 9 starts decreasing, the heating by the heater plate 11 is stopped. Note that the maximum temperature is determined by the volume of the package 4 and the volume of the adsorbent 9.
【００２２】この実施の形態は、以下のような効果を有
する。 （１）吸着材９を活性化するための熱に、吸着材９自体
の反応熱を利用することにより、ヒータープレート１１
からの加熱によるパッケージ４自体の昇温は吸着材反応
開始温度より若干高い温度まででよくなり、パッケージ
４の昇温を抑制できる。This embodiment has the following effects. (1) By utilizing the reaction heat of the adsorbent 9 itself for the heat for activating the adsorbent 9, the heater plate 11
The temperature rise of the package 4 itself due to heating from above can be made up to a temperature slightly higher than the adsorbent reaction start temperature, and the temperature rise of the package 4 can be suppressed.
【００２３】（２）吸着材９と大気との反応により反応
熱が発生する際に、パッケージ４の内部ガスが使用さ
れ、さらに、反応熱により吸着材９自体が活性化され、
吸着材９への吸着にパッケージ４の内部ガスが再び使用
されることにより、パッケージ４内の高真空状態を確保
できる。(2) When reaction heat is generated by the reaction between the adsorbent 9 and the atmosphere, the internal gas of the package 4 is used, and the heat of reaction activates the adsorbent 9 itself.
By reusing the internal gas of the package 4 for adsorption to the adsorbent 9, a high vacuum state in the package 4 can be ensured.
【００２４】（３）吸着材９と反応する気体成分との吸
着材反応開始温度は、ベース２等のパッケージ耐熱温度
より低く設定されているので、ヒータープレート１１か
らの加熱によるパッケージ４の破損を抑制できる。(3) Since the adsorbent reaction start temperature of the adsorbent 9 with the gas component reacting with the adsorbent 9 is set lower than the heat resistance temperature of the package such as the base 2, damage of the package 4 due to heating from the heater plate 11 can be prevented. Can be suppressed.
【００２５】（４）吸着材９が、カバー３と当接しない
ように形成されていることにより、吸着材９の反応熱
が、パッケージ４に直接伝導することを防止でき、パッ
ケージ４の昇温をより抑制できる。 （第２の実施の形態）次に、第２の実施の形態を図４
（ａ）、（ｂ）に従って説明する。この実施の形態で
は、固定具が吸着材反応開始温度以上で変形可能に形成
されている点が、前記実施の形態と異なる。前記実施の
形態と同一部分は、同一符号を付して詳しい説明を省略
する。(4) Since the adsorbent 9 is formed so as not to come into contact with the cover 3, the reaction heat of the adsorbent 9 can be prevented from being directly conducted to the package 4, and the temperature of the package 4 rises. Can be further suppressed. (Second Embodiment) Next, a second embodiment will be described with reference to FIG.
A description will be given according to (a) and (b). This embodiment is different from the above embodiment in that the fixture is formed so as to be deformable at a temperature higher than the adsorbent reaction start temperature. The same parts as those in the above embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００２６】吸着材９は、バイメタル製の固定具２０に
より支持され、図４（ａ）に示すように、初期状態にお
いて、吸着材９はカバー３と当接した状態で支持されて
いる。バイメタル製の固定具２０は、２種の金属板の熱
膨張率の違いにより、吸着材反応開始温度よりわずかに
高い温度で変形を開始し、温度上昇に伴って吸着材９が
カバー３から離れるように構成されている。The adsorbent 9 is supported by a fixture 20 made of bimetal, and as shown in FIG. 4A, in an initial state, the adsorbent 9 is supported in contact with the cover 3. The bimetallic fixture 20 starts to deform at a temperature slightly higher than the adsorbent reaction start temperature due to the difference in the coefficient of thermal expansion between the two metal plates, and the adsorbent 9 separates from the cover 3 as the temperature rises. It is configured as follows.
【００２７】カバー３の吸着材９の取付面の外側が、ヒ
ータープレート１１に接触する状態で加熱が行われ、吸
着材９が吸着材反応開始温度よりわずかに高い温度まで
加熱されると、図４（ｂ）に示すように、固定具２０
は、変形を開始して吸着材９がカバー３から徐々に離れ
る。吸着材９がカバー３から離れた状態で反応熱による
昇温が行われ、前記実施の形態と同様に、吸着材９の活
性化を経て、気体に対する吸着作用が発現され、パッケ
ージ４の内部が高真空化される。When heating is performed with the outside of the mounting surface of the adsorbent 9 of the cover 3 in contact with the heater plate 11 and the adsorbent 9 is heated to a temperature slightly higher than the adsorbent reaction start temperature, FIG. As shown in FIG.
Starts deformation and the adsorbent 9 gradually separates from the cover 3. While the adsorbent 9 is away from the cover 3, the temperature is raised by the heat of reaction, and the adsorbent 9 is activated to exhibit an adsorbing effect on the gas through the activation of the adsorbent 9. High vacuum is applied.
【００２８】この吸着材９の温度が下降される過程にお
いて、固定具２０は、温度の下降に伴い、再び初期状態
の位置へ徐々に変形し、吸着材反応開始温度よりわずか
に高い温度まで下降されると、吸着材９とカバー３とが
当接した初期状態に戻る。In the process of lowering the temperature of the adsorbent 9, the fixture 20 gradually deforms to the initial position again as the temperature decreases, and drops to a temperature slightly higher than the adsorbent reaction start temperature. Then, the state returns to the initial state in which the adsorbent 9 and the cover 3 are in contact with each other.
【００２９】この実施の形態は、前記実施の形態の
（１）〜（３）に記載の効果の他に次の効果を有する。 （５）初期状態において、吸着材９を吸着材反応開始温
度まで加熱する際には、吸着材９とカバー３とが当接
し、吸着材反応開始温度を超えて吸着材９が反応熱によ
り昇温する際には、吸着材９がカバー３から離れるよう
に固定具２０が構成されている。従って、前記実施の形
態と比較して、前記吸着材反応開始温度に達するまでは
効率よくヒータープレート１１の熱を吸着材９に伝導さ
せることができ、反応開始後は吸着材９の反応熱がパッ
ケージ４に伝導することをより抑制できる。This embodiment has the following effects in addition to the effects described in the above embodiments (1) to (3). (5) When the adsorbent 9 is heated to the adsorbent reaction start temperature in the initial state, the adsorbent 9 and the cover 3 come into contact with each other, and the adsorbent 9 rises above the adsorbent reaction start temperature due to reaction heat. The fixture 20 is configured so that the adsorbent 9 separates from the cover 3 when warming. Therefore, as compared with the above embodiment, the heat of the heater plate 11 can be efficiently conducted to the adsorbent 9 until the adsorbent reaction start temperature is reached, and the reaction heat of the adsorbent 9 is reduced after the reaction starts. Conduction to the package 4 can be further suppressed.
【００３０】なお、実施の形態は上記に限らず、例えば
以下のように変更してもよい。 ・大気圧状態において、ベース２とカバー３とを気密状
態に封止する構成を、大気より酸素濃度を高めた雰囲気
中で封止する構成に変更してもよい。このように構成し
た場合、上記実施の形態と比較して、吸着材活性化温度
に達するまでの時間を短縮できる。The embodiment is not limited to the above, and may be modified as follows, for example. The configuration in which the base 2 and the cover 3 are hermetically sealed in the atmospheric pressure state may be changed to a configuration in which the sealing is performed in an atmosphere having an oxygen concentration higher than that of the atmosphere. With this configuration, the time required to reach the adsorbent activation temperature can be reduced as compared with the above embodiment.
【００３１】・吸着材９は、２個の固定具により支持さ
れている構成であったが、３個以上の固定具で支持して
もよい。このように構成した場合、上記実施の形態と比
較して、より安定して吸着材９を支持することができ
る。The adsorbent 9 is supported by two fixtures, but may be supported by three or more fixtures. With this configuration, it is possible to more stably support the adsorbent 9 as compared with the above embodiment.
【００３２】・吸着材９を１個の固定具で支持してもよ
い。このように構成した場合、上記実施の形態と比較し
て、固定具をカバー３に容易に取り付けることができ
る。 ・第２の実施の形態において、カバー３と吸着材９とが
当接した状態で加熱されるため、ヒータープレート１１
による加熱は、吸着材９を吸着材反応開始温度まで昇温
させた後に、ＯＦＦ状態にしてもよい。この場合、上記
実施の形態と比較して、パッケージ４の昇温をより抑制
することができる。The adsorbent 9 may be supported by a single fixture. With this configuration, the fixture can be easily attached to the cover 3 as compared with the above embodiment. In the second embodiment, since the cover 3 and the adsorbent 9 are heated in contact with each other, the heater plate 11
May be turned off after the adsorbent 9 is heated to the adsorbent reaction start temperature. In this case, the temperature rise of the package 4 can be further suppressed as compared with the above embodiment.
【００３３】・シール部６は、ガラス材と同等以上の絶
縁性を有し、吸着材反応開始温度よりわずかに高い温度
まで加熱されても変化しない物質で形成してもよい。 ・第２の実施の形態の固定具２０を、形状記憶合金で形
成してもよい。この場合、形状記憶合金製の固定具の元
の形状を、吸着材反応開始温度よりもわずかに高い温度
に加熱された際に、吸着材９がカバー３から離れている
形状に成形し、初期状態では、吸着材９とカバー３とを
当接するように形状記憶合金製の固定具を変形させる。
形状記憶合金製の固定具は、高温で変形したものを室温
で変形させておいても、加熱すると元の成形時の形状に
戻る性質があるため、パッケージ４の昇温を抑制でき
る。The seal portion 6 may be formed of a material having an insulating property equal to or higher than that of a glass material, and which does not change even when heated to a temperature slightly higher than the adsorbent reaction start temperature. -The fixture 20 of the second embodiment may be formed of a shape memory alloy. In this case, when the original shape of the fixture made of a shape memory alloy is heated to a temperature slightly higher than the adsorbent reaction start temperature, the adsorbent 9 is formed into a shape away from the cover 3, and the initial shape is formed. In the state, the fixture made of a shape memory alloy is deformed so that the adsorbent 9 and the cover 3 come into contact with each other.
Even if a shape memory alloy fixture deformed at high temperature is deformed at room temperature, it has the property of returning to its original shape when heated, so that the temperature rise of the package 4 can be suppressed.
【００３４】次に上記実施の形態から把握できる技術的
思想について、以下に記載する。 （１）ベースと、カバーと、吸着材と、固定具とを備え
たパッケージにおいて、前記固定具は、前記吸着材と大
気との反応開始温度以上で変形可能に形成され、初期状
態において、前記吸着材と前記カバーは当接した状態で
前記固定具に支持され、前記吸着材が前記反応開始温度
以上になると前記固定具が変形して前記吸着材を前記カ
バーから離れて支持することを特徴とするパッケージの
構造。Next, the technical ideas that can be grasped from the above embodiment will be described below. (1) In a package including a base, a cover, an adsorbent, and a fixture, the fixture is formed so as to be deformable at a temperature equal to or higher than a reaction start temperature between the adsorbent and the atmosphere. The adsorbent and the cover are supported by the fixture in contact with each other, and when the adsorbent becomes higher than the reaction start temperature, the fixture is deformed to support the adsorbent away from the cover. And the package structure.
【００３５】（２）請求項３又は技術的思想（１）に記
載の発明において、前記固定具は、バイメタル、また
は、形状記憶合金により形成されている。(2) In the invention described in claim 3 or the technical idea (1), the fixing tool is made of a bimetal or a shape memory alloy.
【００３６】[0036]
【発明の効果】以上、詳述したように、請求項１〜請求
項３に記載の発明によれば、製造工程を簡単にでき、電
子部品等の熱的ダメージを抑制し、パッケージ内の高真
空状態を容易に確保できる。As described in detail above, according to the first to third aspects of the present invention, the manufacturing process can be simplified, thermal damage to electronic components and the like can be suppressed, and the height within the package can be reduced. A vacuum state can be easily secured.
【図１】（ａ）〜（ｆ）は半導体装置の製造過程を示す
模式断面図。FIGS. 1A to 1F are schematic cross-sectional views showing a manufacturing process of a semiconductor device.
【図２】外部加熱温度、吸着材温度及びパッケージ温度
の時間変化と、内部真空度の時間変化とを示すグラフ。FIG. 2 is a graph showing a time change of an external heating temperature, an adsorbent temperature, and a package temperature, and a time change of an internal vacuum degree.
【図３】半導体装置の模式断面図。FIG. 3 is a schematic cross-sectional view of a semiconductor device.
【図４】（ａ）は第２の実施の形態の半導体装置を示す
模式断面図、（ｂ）は同じく固定具が変形した状態の模
式断面図。FIG. 4A is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment, and FIG. 4B is a schematic cross-sectional view illustrating a state in which a fixture is similarly deformed.
２…ベース、３…カバー、４…パッケージ、５…デバイ
ス、９…吸着材、１０，２０…固定具。2 ... base, 3 ... cover, 4 ... package, 5 ... device, 9 ... adsorbent, 10, 20 ... fixture.
Claims (3)
上に被せられるカバーと、カバー内に取付けられる吸着
材と、該吸着材を前記カバーに固定する固定具とを備
え、パッケージングされるパッケージの真空封止方法で
あって、前記ベースに前記カバーを大気圧状態で封止
し、前記カバー側より前記吸着材が大気と反応を開始す
る温度まで加熱し、その反応熱により前記吸着材を活性
化し、前記パッケージの内部に存在するガスを前記吸着
材に吸着させ、前記パッケージの内部を真空にすること
を特徴とするパッケージの真空封止方法。1. A package comprising a base to which a device is fixed, a cover placed on the base, an adsorbent mounted in the cover, and a fixture for fixing the adsorbent to the cover. A vacuum sealing method for a package, wherein the cover is sealed to the base under atmospheric pressure, the adsorbent is heated from the cover side to a temperature at which the adsorbent starts reacting with the atmosphere, and the adsorbent is heated by the reaction heat. Activating the gas, adsorbing the gas existing inside the package to the adsorbent, and evacuating the inside of the package.
記パッケージの耐熱温度より低く設定されていることを
特徴とする請求項１に記載のパッケージの真空封止方
法。2. The package vacuum sealing method according to claim 1, wherein a reaction start temperature between the adsorbent and the atmosphere is set lower than a heat resistant temperature of the package.
形可能に形成され、前記吸着材は、初期状態において、
前記カバーと当接した状態で前記固定具に支持され、前
記吸着材が反応開始温度以上になると前記固定具が変形
を開始して前記カバーから離れて支持されることを特徴
とする請求項１又は請求項２に記載のパッケージの真空
封止方法。3. The fixing device is formed so as to be deformable at a temperature equal to or higher than the reaction start temperature, and the adsorbent is in an initial state.
2. The fixing device according to claim 1, wherein the fixing device is supported by the fixing device in a state in which the fixing device is brought into contact with the cover, and the fixing device starts to deform when the adsorbent reaches a reaction start temperature or higher. Or the package vacuum sealing method according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083098A JP4483112B2 (en) | 2001-03-22 | 2001-03-22 | Package vacuum sealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083098A JP4483112B2 (en) | 2001-03-22 | 2001-03-22 | Package vacuum sealing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002280469A true JP2002280469A (en) | 2002-09-27 |
| JP4483112B2 JP4483112B2 (en) | 2010-06-16 |
Family
ID=18938962
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001083098A Expired - Fee Related JP4483112B2 (en) | 2001-03-22 | 2001-03-22 | Package vacuum sealing method |
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| Country | Link |
|---|---|
| JP (1) | JP4483112B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007234636A (en) * | 2006-02-27 | 2007-09-13 | Kyocera Corp | Lid body and electronic device using the same |
| JP2007335695A (en) * | 2006-06-16 | 2007-12-27 | Nissan Motor Co Ltd | Electronic component and method of manufacturing the same |
-
2001
- 2001-03-22 JP JP2001083098A patent/JP4483112B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007234636A (en) * | 2006-02-27 | 2007-09-13 | Kyocera Corp | Lid body and electronic device using the same |
| JP2007335695A (en) * | 2006-06-16 | 2007-12-27 | Nissan Motor Co Ltd | Electronic component and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4483112B2 (en) | 2010-06-16 |
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