JP2002280410A - Wire-bonding method - Google Patents

Wire-bonding method

Info

Publication number
JP2002280410A
JP2002280410A JP2001075346A JP2001075346A JP2002280410A JP 2002280410 A JP2002280410 A JP 2002280410A JP 2001075346 A JP2001075346 A JP 2001075346A JP 2001075346 A JP2001075346 A JP 2001075346A JP 2002280410 A JP2002280410 A JP 2002280410A
Authority
JP
Japan
Prior art keywords
bonding
wire
conductor
capillary
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001075346A
Other languages
Japanese (ja)
Other versions
JP3570551B2 (en
Inventor
Tamanari Yasuda
玉成 安田
Rei Imai
玲 今井
Yuji Kosaku
祐次 小作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP2001075346A priority Critical patent/JP3570551B2/en
Priority to TW91120240A priority patent/TW564538B/en
Publication of JP2002280410A publication Critical patent/JP2002280410A/en
Application granted granted Critical
Publication of JP3570551B2 publication Critical patent/JP3570551B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wire-bonding method by which the occurrence of the U-shaped dripping of a wire loop between a semiconductor chip and a wiring section can be suppressed. SOLUTION: In this wire-bonding method, first and second conductors are wire-bonded to each other after successively performing primary bonding on the first conductor and secondary bonding on the second conductor. The primary bonding is performed after a bump is formed on the second conductor by performing ball bonding, and a capillary is operated to form an inclined wedge on the bump. Then the secondary bonding is performed to bond a wire to the inclined wedge by looping the wire against the bump from the first conductor side.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、２つの導体間をワ
イヤボンディングするワイヤボンディング方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for performing wire bonding between two conductors.

【０００２】[0002]

【従来の技術】ワイヤボンディングを行う場合、キャピ
ラリー内にＡｕワイヤが挿通されたキャピラリーを用
い、トーチ電極からの放電によりキャピラリーから突出
したＡｕワイヤの先端にボールを形成し、キャピラリー
を半導体チップ上に位置させ１次ボンディングを行った
後、キャピラリーを配線上に移動させ２次ボンディング
を行うことにより、半導体チップと配線間をワイヤボン
ディングする方法が一般的に用いられている。2. Description of the Related Art When performing wire bonding, a ball is formed at the tip of an Au wire projecting from a capillary by discharge from a torch electrode using a capillary in which an Au wire is inserted into the capillary, and the capillary is placed on a semiconductor chip. A method is generally used in which the semiconductor chip and the wiring are wire-bonded by moving the capillary onto the wiring and performing the secondary bonding after positioning and performing the primary bonding.

【０００３】この場合、配線材料が、例えばＣｕ、Ｎ
ｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合
性の悪い材料であると、配線上に直接ボンディングを行
うことができないため、ボンディングを行う部分に、予
めＡｇメッキあるいはＡｕ厚膜等の下地を形成するよう
にしている。In this case, the wiring material is, for example, Cu, N
i. If the material is poor in bonding with the Au wire, such as flash Au plating, it is not possible to perform direct bonding on the wiring. Therefore, a base such as Ag plating or an Au thick film must be formed beforehand on the bonding portion. It is formed.

【０００４】しかしながら、そのような下地を設けるの
は実用上好ましくなく、配線材料がＡｕワイヤと接合性
の悪い材料であっても、配線上に直接ボンディングでき
るようにする方法が望まれている。However, it is not practically preferable to provide such an underlayer, and there is a demand for a method that enables direct bonding on the wiring even if the wiring material is a material having poor bonding properties with the Au wire.

【０００５】たとえば特開平１０−１１２４７１号公報
には、第２導体上にボールボンディングを行ってバンプ
を形成し、そのウエッジボンディングをバンプに対して
第１導体と反対側の位置にて行った後、バンプに対し第
１導体側からワイヤーをルーピングしてバンプ上に２次
ボンディングを行い、第１導体と第２導体間をワイヤボ
ンディングする方法が記載されている。この方法によれ
ば、ボールボンディングによりバンプを形成した後に、
そのウエッジボンディングをバンプ後方の配線部上に行
うので、ウエッジボンディングは屈曲した形状になり、
バンプのテールの発生がなくなる。又、バンプ上に２次
ボンディングを行う場合、バンプからのびるワイヤの屈
曲部が貫通穴内に入り込むようにキヤピラリを位置させ
たとき、貫通孔の内壁により屈曲部が押され、ワイヤが
貫通孔の多側の内壁にて押しつぶされた状態で接合され
る特徴を持っていると記載されている。For example, Japanese Patent Application Laid-Open No. H10-112471 discloses that a bump is formed by performing ball bonding on a second conductor, and the wedge bonding is performed at a position opposite to the first conductor with respect to the bump. A method is described in which a wire is looped from the first conductor side to the bump to perform secondary bonding on the bump, and wire bonding is performed between the first conductor and the second conductor. According to this method, after forming a bump by ball bonding,
Since the wedge bonding is performed on the wiring portion behind the bump, the wedge bonding has a bent shape,
The occurrence of bump tails is eliminated. Also, when performing secondary bonding on the bump, when the capillary is positioned so that the bent portion of the wire extending from the bump enters the through hole, the bent portion is pushed by the inner wall of the through hole, and the wire is formed in a large number of through holes. It is described as having the feature of being joined in a crushed state on the inner wall on the side.

【０００６】[0006]

【発明が解決しようとする課題】しかしながら、上記公
報に掲載された方法では、バンプ形成後のウエッジボン
ディングとワイヤー部との接合になり、すなわち曲面同
士での接合となり接合位置ずれを起こした場合、結果と
してワイヤ曲がりを発生させ、隣り合うワイヤ間で接触
が発生する。又、バンプ後のウエッジボンディングを後
方へ湾曲形状に形成することにワイヤーテールの発生は
抑制出来るが、ワイヤとバンプ接合において十分な傾
斜、及び平面が確保出来ない為、図５波線で示した、バ
ンプとワイヤを接合した後に発生するワイヤと回路基板
との接触、ワイヤと配線間の接触を防止出来ない。従っ
て、本発明は、バンプとワイヤ接合後のワイヤ部と回路
基板との接触、及びワイヤと配線間との接触の発生を防
止する。又、バンプとワイヤ接合時のワイヤ曲がりの発
生を防止し、傾斜バンプ上面でワイヤとの接合を行うこ
とを目的とする。However, according to the method disclosed in the above publication, wedge bonding after bump formation and bonding to the wire portion are performed, that is, when bonding is performed between curved surfaces and a bonding position shift occurs, As a result, wire bending occurs, and contact occurs between adjacent wires. Also, the formation of the wedge bonding after the bump in a backward curved shape can suppress the generation of the wire tail, but a sufficient inclination and flat surface cannot be secured in bonding the wire and the bump. The contact between the wire and the circuit board and the contact between the wire and the wiring, which occur after joining the bump and the wire, cannot be prevented. Therefore, the present invention prevents the occurrence of contact between the wire portion and the circuit board after bonding the bump and the wire, and between the wire and the wiring. It is another object of the present invention to prevent the wire from being bent at the time of bonding the bump and the wire, and to bond the wire to the upper surface of the inclined bump.

【課題を解決するための手段】[Means for Solving the Problems]

【０００７】上記目的を達成するため、請求項１に記載
の発明においては、第１導体上に１次ボンディングを行
った後、第２導体上に２次ボンディングを行い、前記第
１導体と前記第２導体間をワイヤボンディングする方法
において、第２次導体上にボールボンディングを行いバ
ンプを形成し、前記バンプの上方に傾斜ウエッジを形成
するようにキャピラリーを動作させた後、前記１次ボン
ディングを行った後、前記バンプに対して前記１次導体
側からワイヤをルーピングして前記バンプ上部の傾斜ウ
エッジ上に前記第２次ボンディングを行うことを特徴と
するワイヤボンディング方法。In order to achieve the above object, according to the first aspect of the present invention, after performing primary bonding on a first conductor, secondary bonding is performed on a second conductor, and the first conductor and the first conductor are bonded to each other. In the method of wire bonding between the second conductors, ball bonding is performed on the secondary conductor to form a bump, and the capillary is operated so as to form an inclined wedge above the bump. And performing the secondary bonding on an inclined wedge above the bump by looping a wire from the primary conductor side to the bump.

【０００８】貫通孔にワイヤが挿通されたキャピラリー
を用いて、第１導体上に１次ボンディングを行った後、
第２導体上に２次ボンディングを行い、前記第１導体と
前記第２導体間をワイヤボンディングする方法におい
て、前記キャピラリーを前記第２導体上に位置させてボ
ールボンディングを行い、前記第２導体上にバンプを形
成した後、前記キャピラリーを上方へ移動させた後に、
前記キャピラリーを第１導体と反対側の位置に移動さ
せ、再度前記キャピラリーを下方に移動させ傾斜ウエッ
ジを形成させた後にワイヤを切断し、前記１次ボンディ
ングを行った後、前記キャピラリーを前記バンプ上方の
傾斜ウエッジに位置させ前記キャピラリー内から延びる
ワイヤを前記キャピラリーの先端付近で前記バンプ上部
の傾斜ウエッジとワイヤと接合し、その接合部で前記キ
ャピラリー内のワイヤを切断して、前記２次ボンディン
グを行うことを特徴とするワイヤボンディング方法。After performing primary bonding on the first conductor using a capillary having a wire inserted through the through hole,
In the method of performing secondary bonding on a second conductor and wire bonding between the first conductor and the second conductor, the capillary is positioned on the second conductor and ball bonding is performed on the second conductor. After forming a bump, after moving the capillary upward,
After moving the capillary to the position opposite to the first conductor, moving the capillary downward again to form an inclined wedge, cutting the wire, performing the primary bonding, and moving the capillary above the bump. A wire extending from the inside of the capillary positioned at the inclined wedge is joined to the inclined wedge above the bump and the wire near the tip of the capillary, and the wire in the capillary is cut at the joint to perform the secondary bonding. Performing a wire bonding method.

【０００９】１次導体と２次導体をワイヤボンディング
する方法において、バンプ上部に形成される傾斜ウエッ
ジ上部は平面であり、キャピラリーを前記傾斜ウエッジ
部に位置させ、キャピラリー貫通孔の外壁によりワイヤ
を傾斜ウエッジ部に押しつけて、接合を行うことを特徴
とする請求項１に記載のワイヤボンディング方法。In the method of wire bonding the primary conductor and the secondary conductor, the upper portion of the inclined wedge formed on the upper portion of the bump is a flat surface, the capillary is positioned on the inclined wedge portion, and the wire is inclined by the outer wall of the capillary through hole. 2. The wire bonding method according to claim 1, wherein the bonding is performed by pressing against a wedge portion.

【００１０】[0010]

【発明の実施の形態】図１に本発明の一実施形態に係る
ワイヤボンディング方法を用いて半導体チップと配線間
をワイヤボンディングした状態を示す。回路基板（セラ
ミック基板やプリント基板等の基板、又はリードフレー
ム）１の上に、ダイマウントペースト２により半導体チ
ップ３がマウントされている。又、回路基板１の上に
は、Ｎｉ、Ｃｕ等のＡｕワイヤ５と接合性の悪い配線材
料を用いたベースが形成されている。FIG. 1 shows a state in which a semiconductor chip and a wiring are wire-bonded using a wire bonding method according to an embodiment of the present invention. A semiconductor chip 3 is mounted on a circuit board (a board such as a ceramic board or a printed board, or a lead frame) 1 with a die mount paste 2. Further, on the circuit board 1, a base is formed using a wiring material having poor bonding properties with the Au wire 5 such as Ni or Cu.

【００１１】次に本発明の一実施形態に係るワイヤボン
ディング方法について図２に沿って説明する。図２
（ａ）の行程では、キャピラリー７の貫通孔７ａにワイ
ヤ５を挿通した状態で、電気トーチ８によりキャピラリ
ー７から突出したワイヤ５の先端にボール５ａを形成す
る。図２（ｂ）の行程でキヤピラリー７を配線部４上に
位置させてボールボンディングを行う。このボンディン
グによりバンプ６を形成する。図２（ｃ）〜（ｄ）の行
程では、キヤピラリー７を上昇させた後に、バンプ６の
中心から第１導体側と反対方向へ移動させ、その後に再
度キャピラリー７を下方に押し下げキャピラリー外壁面
７ｂで傾斜ウエジッジ９をバンプ６上部に形成し、ワイ
ヤ５を切断する。この傾斜ウエッジ９は、バンプ６上部
に形成される。バンプ６上部の傾斜ウエッジボンディン
グ部９の傾斜角度は、２〜１５度にすることによりボン
ディングパット３ａからバンプ６上部の傾斜ウエッジボ
ンディング部へワイヤボンディングする時の案内角度と
なり、Ｕ字状のタレが起きないことが実験からわかっ
た。図３のθがこの角度である。図２（ｅ）の行程で
は、電気トーチ８によりワイヤ５の先端にボール５ａを
形成させる。図２（ｆ）の行程においては、キャピラリ
ー７を半導体チップ３のボンディングパット上３ａに位
置させ、１次ボンディングを行う。図２（ｇ）の行程で
は、ワイヤ５のループピングを行い、ワイヤ５をバンプ
６の傾斜部ウエッジボンディング部９の上部に位置さ
せ、キャピラリー７の外壁面７ｂでルーピングワイヤ５
と傾斜ウエッジボンディング部９を接合させ、ワイヤ５
を切断する。図３は上記（ｇ）の行程におけるワイヤと
傾斜ウエッジとの接合時の拡大図面である。上記におけ
るワイヤ接合方法は、超音波印加手段によるものであ
る。Next, a wire bonding method according to an embodiment of the present invention will be described with reference to FIG. FIG.
In the step (a), the ball 5a is formed at the tip of the wire 5 protruding from the capillary 7 by the electric torch 8 with the wire 5 inserted through the through hole 7a of the capillary 7. In the process of FIG. 2B, ball bonding is performed with the capillary 7 positioned on the wiring portion 4. The bump 6 is formed by this bonding. In the steps of FIGS. 2C to 2D, after raising the capillary 7, the capillary 7 is moved from the center of the bump 6 in the direction opposite to the first conductor side, and then the capillary 7 is pushed down again and the capillary outer wall surface 7b To form the inclined wedge 9 on the bump 6 and cut the wire 5. The inclined wedge 9 is formed above the bump 6. The inclination angle of the inclined wedge bonding portion 9 above the bump 6 becomes a guide angle when wire bonding from the bonding pad 3a to the inclined wedge bonding portion above the bump 6 by setting the inclination angle to 2 to 15 degrees. Experiments have shown that it does not happen. Θ in FIG. 3 is this angle. In the process of FIG. 2E, the ball 5a is formed at the tip of the wire 5 by the electric torch 8. In the step of FIG. 2F, the primary bonding is performed with the capillary 7 positioned on the bonding pad 3a of the semiconductor chip 3. 2G, the wire 5 is looped, the wire 5 is positioned above the inclined wedge bonding portion 9 of the bump 6, and the looping wire 5 is fixed on the outer wall surface 7b of the capillary 7.
And the inclined wedge bonding portion 9 and
Disconnect. FIG. 3 is an enlarged view when the wire and the inclined wedge are joined in the step (g). The above wire bonding method is based on an ultrasonic wave applying means.

【００１２】[0012]

【発明の効果】上記したワイヤボンディング方法によれ
ば、バンプ上部に形成した平坦な面の傾斜ウエッジが、
１次導体から２次導体にワイヤループ接続時に案内面と
なり，ワイヤと半導体チップ、ワイヤとパツト間の接触
を防止出来る。又、バンプ上部のウエッジボンディング
が平坦な面になるため、従来のようなワイヤとワイヤで
の接合時に発生するワイヤ曲がりが無くなり、結果とし
てワイヤボンディング後の隣り合うワイヤ間でのショー
トが無くなる。さらに、バンプ上部のウエッジボンディ
ングが傾斜平面形状を形成するのでウエッジボンディン
グ後のワイヤ残りが無くなり、半導体パッケージングを
薄くすることが出来る。又傾斜ウエッジ面が平坦面であ
るので、接合面積を拡大でき、接合強度を高くすること
も可能になる。According to the wire bonding method described above, the inclined wedge of the flat surface formed on the bump is
When a wire loop is connected from the primary conductor to the secondary conductor, it serves as a guide surface, so that contact between the wire and the semiconductor chip and between the wire and the pad can be prevented. In addition, since the wedge bonding on the upper portion of the bump becomes a flat surface, wire bending which occurs at the time of bonding between wires as in the related art is eliminated, and as a result, short circuit between adjacent wires after wire bonding is eliminated. Furthermore, since the wedge bonding on the upper part of the bumps forms an inclined plane shape, there is no wire residue after the wedge bonding, and the semiconductor packaging can be thinned. In addition, since the inclined wedge surface is a flat surface, the bonding area can be increased and the bonding strength can be increased.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施形態に係るワイヤボンディング
方法を用いて半導体チップと配線間がワイヤボンディン
グされた状態を示す図面である。FIG. 1 is a view showing a state in which a semiconductor chip and a wiring are wire-bonded using a wire bonding method according to an embodiment of the present invention.

【図２】本発明の接合行程を説明するための図面であ
る。FIG. 2 is a view for explaining a joining process of the present invention.

【図３】本発明のバンプ上部の傾斜ウエッジ上に２次ボ
ンディングを行う場合の説明図である。FIG. 3 is an explanatory diagram of a case where secondary bonding is performed on an inclined wedge above a bump according to the present invention.

【図４】従来実施図面FIG. 4 is a drawing of a conventional implementation.

【図５】従来の問題を説明するための図である。FIG. 5 is a diagram for explaining a conventional problem.

【符号の説明】[Explanation of symbols]

１ 回路基板 ２ ダイマウントペースト ３ 半導体チップ ３ａ ボンディングパット ４ 配線 ５ ワイヤ ５ａ ボール ６ バンプ ６ａ 屈曲部 ７ キャピラリー ７ａ 貫通孔 ７ｂ 外壁面 ８ トーチ電極 ９ 傾斜ウエッジ部 DESCRIPTION OF SYMBOLS 1 Circuit board 2 Die mount paste 3 Semiconductor chip 3a Bonding pad 4 Wiring 5 Wire 5a Ball 6 Bump 6a Bending part 7 Capillary 7a Through hole 7b Outer wall surface 8 Torch electrode 9 Slant wedge part

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 第１導体上に１次ボンディングを行った
後、第２導体上に２次ボンディングを行い、前記第１導
体と前記第２導体間をワイヤボンディングする方法にお
いて、第２次導体上にボールボンディングを行いバンプ
を形成し、前記バンプの上方に傾斜ウエッジを形成する
ようにキャピラリーを動作させた後、前記１次ボンディ
ングを行った後、前記バンプに対して前記１次導体側か
らワイヤをルーピングして前記バンプ上部の傾斜ウエッ
ジ上に前記第２次ボンディングを行うことを特徴とする
ワイヤボンディング方法。1. A method of performing a primary bonding on a first conductor and then performing a secondary bonding on a second conductor and wire bonding between the first conductor and the second conductor. After performing ball bonding on the bumps, operating the capillary to form an inclined wedge above the bumps, performing the primary bonding, and then performing the primary bonding on the bumps from the primary conductor side. A wire bonding method, wherein the second bonding is performed on an inclined wedge above the bump by looping a wire. 【請求項２】 貫通孔にワイヤが挿通されたキャピラリ
ーを用いて、第１導体上に１次ボンディングを行った
後、第２導体上に２次ボンディングを行い、前記第１導
体と前記第２導体間をワイヤボンディングする方法にお
いて、 前記キャピラリーを前記第２導体上に位置させてボール
ボンディングを行い、前記第２導体上にバンプを形成し
た後、前記キャピラリーを上方へ移動させた後に、前記
キャピラリーを第１導体と反対側の位置に移動させ、再
度前記キャピラリーを下方に移動させ傾斜ウエッジを形
成させた後にワイヤを切断し、 前記１次ボンディングを行った後、前記キャピラリーを
前記バンプ上方の傾斜ウエッジに位置させ前記キャピラ
リー内から延びるワイヤを前記キャピラリーの先端付近
で前記バンプ上部の傾斜ウエッジとワイヤと接合し、そ
の接合部で前記キャピラリー内のワイヤを切断して、前
記２次ボンディングを行うことを特徴とするワイヤボン
ディング方法。2. A first bonding is performed on a first conductor by using a capillary having a wire inserted in a through hole, and then a second bonding is performed on a second conductor. In the method of performing wire bonding between conductors, the method includes the steps of: performing ball bonding by positioning the capillary on the second conductor; forming a bump on the second conductor; and moving the capillary upward; Is moved to a position opposite to the first conductor, the capillary is moved downward again to form an inclined wedge, the wire is cut, and after performing the primary bonding, the capillary is inclined above the bump. A wire positioned at the wedge and extending from the inside of the capillary is connected with the inclined wedge above the bump near the tip of the capillary. Ya and bonded, wire bonding method by cutting the wire of the capillary at its junction and performing the secondary bonding. 【請求項３】 １次導体と２次導体をワイヤボンディン
グする方法において、バンプ上部に形成される傾斜ウエ
ッジ上部は平面であり、キャピラリーを前記傾斜ウエッ
ジ部に位置させ、キャピラリー貫通孔の外壁によりワイ
ヤを傾斜ウエッジ部に押しつけて、接合を行うことを特
徴とする請求項１に記載のワイヤボンディング方法。3. A method of wire bonding a primary conductor and a secondary conductor, wherein an upper portion of an inclined wedge formed on an upper portion of a bump is a flat surface, a capillary is located on the inclined wedge portion, and a wire is formed by an outer wall of a capillary through hole. 2. The wire bonding method according to claim 1, wherein the bonding is performed by pressing the wire against the inclined wedge portion.
JP2001075346A 2001-03-16 2001-03-16 Wire bonding method Expired - Lifetime JP3570551B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001075346A JP3570551B2 (en) 2001-03-16 2001-03-16 Wire bonding method
TW91120240A TW564538B (en) 2001-03-16 2002-09-05 Wire bonding method, method of forming bump and bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001075346A JP3570551B2 (en) 2001-03-16 2001-03-16 Wire bonding method

Publications (2)

Publication Number Publication Date
JP2002280410A true JP2002280410A (en) 2002-09-27
JP3570551B2 JP3570551B2 (en) 2004-09-29

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ID=18932445

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* Cited by examiner, † Cited by third party
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US6921016B2 (en) 2002-02-19 2005-07-26 Seiko Epson Corporation Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US7025247B2 (en) 2003-02-17 2006-04-11 Kabushiki Kaisha Shinkawa Wire bonding method
US7064425B2 (en) 2002-02-19 2006-06-20 Seiko Epson Corporation Semiconductor device circuit board, and electronic equipment
WO2006095805A1 (en) * 2005-03-09 2006-09-14 Hitachi Kyowa Engineering Co., Ltd. Electronic circuit and method for manufacturing same
JP2008098549A (en) * 2006-10-16 2008-04-24 Kaijo Corp Semiconductor device
US7370785B2 (en) 2003-09-22 2008-05-13 Kabushiki Kaisha Shinkawa Wire bonding method and apparatus
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