JP2002260855A - Manufacturing method of organic film element - Google Patents
Manufacturing method of organic film elementInfo
- Publication number
- JP2002260855A JP2002260855A JP2001058835A JP2001058835A JP2002260855A JP 2002260855 A JP2002260855 A JP 2002260855A JP 2001058835 A JP2001058835 A JP 2001058835A JP 2001058835 A JP2001058835 A JP 2001058835A JP 2002260855 A JP2002260855 A JP 2002260855A
- Authority
- JP
- Japan
- Prior art keywords
- organic thin
- thin film
- film layer
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000010409 thin film Substances 0.000 claims description 259
- 150000002894 organic compounds Chemical class 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000006837 decompression Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 4
- 229920006015 heat resistant resin Polymers 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 239
- -1 Polyparaphenylene vinylene Polymers 0.000 description 34
- 150000001875 compounds Chemical class 0.000 description 32
- 238000007789 sealing Methods 0.000 description 15
- 238000000576 coating method Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 229920000123 polythiophene Polymers 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 5
- 229920000515 polycarbonate Polymers 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 229920000728 polyester Polymers 0.000 description 5
- 229920005596 polymer binder Polymers 0.000 description 5
- 239000002491 polymer binding agent Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 229920000265 Polyparaphenylene Polymers 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 150000004866 oxadiazoles Chemical class 0.000 description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920002098 polyfluorene Polymers 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 3
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 150000008376 fluorenones Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000007978 oxazole derivatives Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Chemical class 0.000 description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 2
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 2
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 2
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000008425 anthrones Chemical class 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 150000001716 carbazoles Chemical class 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 2
- 150000007857 hydrazones Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 2
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 2
- AODWRBPUCXIRKB-UHFFFAOYSA-N naphthalene perylene Chemical group C1=CC=CC2=CC=CC=C21.C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 AODWRBPUCXIRKB-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 2
- 150000004986 phenylenediamines Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 2
- 150000003219 pyrazolines Chemical class 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- YMRMDGSNYHCUCL-UHFFFAOYSA-N 1,2-dichloro-1,1,2-trifluoroethane Chemical compound FC(Cl)C(F)(F)Cl YMRMDGSNYHCUCL-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- VLRSADZEDXVUPG-UHFFFAOYSA-N 2-naphthalen-1-ylpyridine Chemical class N1=CC=CC=C1C1=CC=CC2=CC=CC=C12 VLRSADZEDXVUPG-UHFFFAOYSA-N 0.000 description 1
- 150000005360 2-phenylpyridines Chemical class 0.000 description 1
- FSEXLNMNADBYJU-UHFFFAOYSA-N 2-phenylquinoline Chemical class C1=CC=CC=C1C1=CC=C(C=CC=C2)C2=N1 FSEXLNMNADBYJU-UHFFFAOYSA-N 0.000 description 1
- QLPKTAFPRRIFQX-UHFFFAOYSA-N 2-thiophen-2-ylpyridine Chemical group C1=CSC(C=2N=CC=CC=2)=C1 QLPKTAFPRRIFQX-UHFFFAOYSA-N 0.000 description 1
- LGLDSEPDYUTBNZ-UHFFFAOYSA-N 3-phenylbuta-1,3-dien-2-ylbenzene Chemical class C=1C=CC=CC=1C(=C)C(=C)C1=CC=CC=C1 LGLDSEPDYUTBNZ-UHFFFAOYSA-N 0.000 description 1
- NNWNNQTUZYVQRK-UHFFFAOYSA-N 5-bromo-1h-pyrrolo[2,3-c]pyridine-2-carboxylic acid Chemical compound BrC1=NC=C2NC(C(=O)O)=CC2=C1 NNWNNQTUZYVQRK-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920002574 CR-39 Polymers 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000013032 Hydrocarbon resin Substances 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000003785 benzimidazolyl group Chemical class N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical class C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229920003240 metallophthalocyanine polymer Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920003050 poly-cycloolefin Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical class Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機薄膜素子の製造
方法に関し、特に有機EL素子の有機薄膜層の形成あるい
は微細パターニングした有機薄膜層の形成に利用できる
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic thin film device, and more particularly to a method which can be used for forming an organic thin film layer of an organic EL device or a finely patterned organic thin film layer.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】有機EL
素子等の有機発光素子は容易に面状発光素子に適用し得
るため、新たな光デバイスとして注目されている。具体
的には、固体発光型の安価な大面積フルカラー表示素子
や書きこみ光源アレイとしての用途が有望視され、多く
の開発が行なわれている。一般に有機発光素子は、発光
層及び前記発光層を挟んだ一対の対向電極（背面電極及
び透明電極）から構成されている。前記有機発光素子に
おいて、一対の対向電極間に電界が印加されると、有機
発光素子内に背面電極から電子が注入されるとともに、
透明電極から正孔が注入される。電子と正孔とが前記発
光層中で再結合し、エネルギー準位が伝導帯から価電子
帯に戻る際にエネルギーが光として放出され、発光す
る。2. Description of the Related Art Organic EL
Organic light-emitting elements such as elements can be easily applied to planar light-emitting elements, and thus have attracted attention as new optical devices. Specifically, applications as a solid-state light-emitting inexpensive large-area full-color display element and a writing light source array are regarded as promising, and many developments have been made. In general, an organic light-emitting device includes a light-emitting layer and a pair of opposed electrodes (a back electrode and a transparent electrode) sandwiching the light-emitting layer. In the organic light emitting device, when an electric field is applied between the pair of opposed electrodes, electrons are injected from the back electrode into the organic light emitting device,
Holes are injected from the transparent electrode. The electrons and holes recombine in the light emitting layer, and when the energy level returns from the conduction band to the valence band, energy is emitted as light and light is emitted.
【０００３】有機EL素子の有機薄膜形成の多くは蒸着方
式により製造されている。カラー画像を得るためのパタ
ーニング方式も提案されている。たとえば、米国特許第
5294869号に示されるシャドウマスクを用いた方法があ
る。ところが、この方法は複雑な蒸着装置を必要とする
ため製造効率が悪く、またパターニングの位置精度も悪
い。[0003] Most of the organic thin film formation of the organic EL element is manufactured by a vapor deposition method. A patterning method for obtaining a color image has also been proposed. For example, U.S. Patent No.
There is a method using a shadow mask disclosed in Japanese Patent No. 5294869. However, this method requires a complicated vapor deposition apparatus, so that the manufacturing efficiency is poor, and the positional accuracy of patterning is also poor.
【０００４】この点を解決する手段として、特開平9-16
7684号は、マイカ仮基板上に予め有機層を均一に蒸着プ
ロセスで形成し、次いで基板と有機層を近接させ、パタ
ーン上に選択的に加熱蒸着する方式を提案している。ま
た特開2000-195665号は、フイルム仮基板に予め有機層
を均一に蒸着プロセスで形成し、次いでマスクを介して
基板と有機層を近接させ、マスクのパターン状に蒸着パ
ターンを形成する方式を提案している。これらの方式
は、蒸着源を仮基板に形成すること以外は、蒸着プロセ
スを用いる必要があるため、製造効率が悪く、また有機
薄膜用に低分子有機化合物しか使用できない。As means for solving this problem, Japanese Patent Application Laid-Open No. 9-16
No. 7684 proposes a method in which an organic layer is uniformly formed on a mica temporary substrate in advance by a vapor deposition process, and then the substrate and the organic layer are brought close to each other to selectively heat and vapor-deposit on a pattern. Japanese Patent Application Laid-Open No. 2000-195665 discloses a method in which an organic layer is uniformly formed on a temporary film substrate in advance by a vapor deposition process, and then the substrate and the organic layer are brought close to each other via a mask to form a vapor deposition pattern in a mask pattern. is suggesting. These methods require the use of an evaporation process other than forming an evaporation source on a temporary substrate, so that the production efficiency is low and only low-molecular organic compounds can be used for organic thin films.
【０００５】また緑色の発光を示すポリパラフェニレン
ビニレン（「ネイチャー」、347巻、539頁、1990年）、
赤橙色の発光を示すポリ（3-アルキルチオフェン）（ジ
ャパニーズ・ジャーナル・オブ・アプライド・フィジク
ス、30巻、L1938頁、1991年）、青色発光素子としてポ
リアルキルフルオレン（ジャパニーズ・ジャーナル・オ
ブ・アプライド・フィジクス、30巻、L1941頁、1991
年）等の高分子の発光薄膜や低分子化合物をバインダー
樹脂に分散させた発光薄膜を用いた高分子型素子も知ら
れている。これらの高分子型素子は大面積化に有利であ
り、またフレキシブルなディスプレイ用途として期待さ
れているが、有機発光薄膜の形成に蒸着プロセスを適応
できない。そのため、通常湿式法により薄膜形成が行わ
れている。Polyparaphenylene vinylene which emits green light (“Nature”, 347, 539, 1990);
Poly (3-alkylthiophene) that emits red-orange light (Japanese Journal of Applied Physics, Vol. 30, L1938, 1991), and polyalkylfluorene (Japanese Journal of Applied Physics) as a blue light-emitting device Physics, Volume 30, L1941, 1991
Polymer type devices using a luminescent thin film of a polymer such as (1) or a luminescent thin film in which a low-molecular compound is dispersed in a binder resin are also known. These polymer devices are advantageous for increasing the area and are expected to be used for flexible displays, but they cannot adapt a vapor deposition process to the formation of an organic light emitting thin film. Therefore, thin film formation is usually performed by a wet method.
【０００６】高分子型素子の薄膜パターニング形成方法
として、インクジェット法や印刷法等が提案されてい
る。ところが、これらの方式では、湿式法のため溶液の
表面張力により有機薄膜の膜厚均一性が不十分であり、
また有機薄膜層を積層する場合に各有機薄膜層の界面で
溶解してしまうという問題がある。このため、この方法
により得られた有機薄膜素子は発光効率や素子耐久性に
劣るという問題があった。[0006] As a method of forming a thin film pattern of a polymer type element, an ink jet method, a printing method and the like have been proposed. However, in these methods, the thickness uniformity of the organic thin film is insufficient due to the surface tension of the solution due to the wet method,
Further, when the organic thin film layers are stacked, there is a problem that they are dissolved at the interface between the organic thin film layers. Therefore, there is a problem that the organic thin film device obtained by this method is inferior in luminous efficiency and device durability.
【０００７】WO 00/41893号は、有機薄膜と光熱変換層
を有するドナーシートを用いて、レーザにより所望のパ
ターンに熱転写する方式を提案している。ところがWO 0
0/41893号のような熱転写法の場合、有機薄膜層の接合
界面に気体の巻き込みの問題がある。有機薄膜層の界面
の状態により、有機EL素子の発光効率や耐久性、更に発
光面状の均一性が異なり、有機薄膜層の接合界面に気体
の巻き込みがあると、素子性能は悪化する。WO 00/41893 proposes a method in which a donor sheet having an organic thin film and a light-to-heat conversion layer is thermally transferred to a desired pattern by a laser. However WO 0
In the case of the thermal transfer method as disclosed in Japanese Patent Application No. 0/41893, there is a problem of entrainment of gas at the bonding interface of the organic thin film layer. Depending on the state of the interface of the organic thin film layer, the luminous efficiency and durability of the organic EL element and the uniformity of the light emitting surface are different. If gas is involved in the bonding interface of the organic thin film layer, the element performance deteriorates.
【０００８】またプリント技術分野で利用されている熱
ヘッドやレーザを用いたパターン状の熱書き込みの場
合、熱拡散性によりパターンの周辺に温度分布が生じ
て、有機薄膜パターンの輪郭がきれいにドナー側から切
断されない。このため発光量のばらつきが生じたり、ま
た電気的不良や薄膜破片による欠陥が起こり、更に耐久
性も悪くなるという問題がある。また基板と熱ヘッドや
レーザとの位置合わせの不良により、歩留まり低下の問
題もある。In the case of thermal writing in a pattern using a thermal head or laser used in the field of printing technology, a temperature distribution is generated around the pattern due to thermal diffusivity, so that the contour of the organic thin film pattern becomes clear on the donor side. Not disconnected from For this reason, there is a problem that variations in the amount of light emission occur, defects due to electrical failure and thin film fragments occur, and the durability is further deteriorated. Further, there is also a problem of a decrease in yield due to a poor alignment between the substrate and the thermal head or laser.
【０００９】従って本発明の目的は、有機薄膜層を簡便
な製造装置で安価に基板上に形成できるとともに、均一
性及び良好な接合界面を有する有機薄膜素子を製造する
方法を提供することであり、特に湿式法を用いて均一な
有機薄膜層を形成することにより、発光効率、発光量の
均一性及び耐久性に優れた有機EL素子等の有機薄膜素子
を効率良く製造する方法を提供することである。Accordingly, an object of the present invention is to provide a method for manufacturing an organic thin-film element having uniformity and a good bonding interface, in which an organic thin-film layer can be formed on a substrate at low cost with a simple manufacturing apparatus. In particular, to provide a method for efficiently producing an organic thin film element such as an organic EL element having excellent luminous efficiency, uniformity of luminous intensity and durability by forming a uniform organic thin film layer using a wet method. It is.
【００１０】[0010]
【課題を解決するための手段】上記目的に鑑み鋭意研究
の結果、本発明者等は、有機薄膜素子を構成する有機薄
膜層を仮支持体に湿式法により塗布し、その有機薄膜層
を基板に転写することにより、発光効率、発光量の均一
性及び耐久性に優れた有機EL素子等の有機薄膜素子を低
コストで製造できることを発見し、本発明に想到した。Means for Solving the Problems As a result of intensive studies in view of the above object, the present inventors have applied an organic thin film layer constituting an organic thin film element to a temporary support by a wet method, and applied the organic thin film layer to a substrate. It has been found that by transferring to an organic EL device, an organic thin film device such as an organic EL device having excellent luminous efficiency, uniformity of luminous intensity, and durability can be manufactured at low cost.
【００１１】すなわち、本発明の一実施例による有機薄
膜素子の製造方法は、仮支持体上に湿式法により有機薄
膜層を形成することにより転写材料を作製し、前記転写
材料の前記有機薄膜層側を基板の被成膜面に対面させ、
前記転写材料と前記被成膜面とに挟まれた空間を減圧に
することにより両者を密着させ、加熱し、前記仮支持体
を引き剥がすことにより前記有機薄膜層を前記基板の被
成膜面に転写することを特徴とする。That is, in a method of manufacturing an organic thin film element according to one embodiment of the present invention, a transfer material is formed by forming an organic thin film layer on a temporary support by a wet method, and the organic thin film layer of the transfer material is formed. Side facing the film-forming surface of the substrate,
The space between the transfer material and the film-forming surface is decompressed to bring them into close contact with each other, heated, and the temporary support is peeled off to remove the organic thin-film layer from the film-forming surface of the substrate. Is transferred to
【００１２】本発明の別の実施例による有機薄膜素子の
製造方法は、前記転写材料と前記被成膜面との間に微細
パターン状の開口部を有するマスクを介在させ、前記転
写材料と前記被成膜面とに挟まれたマスク開口部の空間
を減圧して、前記転写材料の前記有機薄膜層と前記被成
膜面とを密着させ、加熱し、前記仮支持体を引き剥がす
ことにより前記マスク開口部の微細パターン状に前記有
機薄膜層を基板に転写することを特徴とする。According to another embodiment of the present invention, there is provided a method of manufacturing an organic thin film element, wherein a mask having a fine pattern opening is interposed between the transfer material and the surface on which the film is to be formed. By depressurizing the space of the mask opening portion sandwiched between the film formation surface and the organic thin film layer of the transfer material and the film formation surface in close contact with each other, heating, and peeling off the temporary support The organic thin film layer is transferred to a substrate in a fine pattern at the mask opening.
【００１３】本発明のさらに別の実施例による有機薄膜
素子の製造方法は、仮支持体上に湿式法により有機薄膜
層を形成することにより転写材料を作製し、前記転写材
料の前記有機薄膜層側を前記基板の被成膜面に対面させ
て密着させ、加熱し、前記仮支持体を引き剥がすことに
より前記有機薄膜層を前記基板に転写する剥離転写法に
より有機薄膜素子を製造するもので、連続面状の有機薄
膜層及び微細パターン状の有機薄膜層の任意の組合せか
らなる積層体を前記剥離転写法を繰り返すことにより前
記基板上に形成することを特徴とする。In a method of manufacturing an organic thin film device according to still another embodiment of the present invention, a transfer material is formed by forming an organic thin film layer on a temporary support by a wet method, and the organic thin film layer of the transfer material is formed. The organic thin film element is manufactured by a peeling transfer method of transferring the organic thin film layer to the substrate by peeling the temporary support and heating the organic thin film layer to the substrate, with the side facing the film formation surface of the substrate and in close contact with the film formation surface. A laminate comprising an arbitrary combination of a continuous planar organic thin film layer and a finely patterned organic thin film layer is formed on the substrate by repeating the peeling transfer method.
【００１４】本発明のさらに別の実施例による有機薄膜
素子の製造方法は、仮支持体上に湿式法により有機薄膜
層を形成することにより転写材料を作製し、前記転写材
料の前記有機薄膜層側を基板の被成膜面に対面させ、前
記転写材料と前記被成膜面とに挟まれた空間を減圧にす
ることにより両者を密着させ、加熱し、前記仮支持体を
引き剥がして、前記有機薄膜層を前記基板に転写する剥
離転写法により有機薄膜素子を製造するもので、連続面
状の有機薄膜層及び微細パターン状の有機薄膜層の任意
の組合せからなる積層体を前記剥離転写法を繰り返すこ
とにより前記基板上に形成することを特徴とする。In a method of manufacturing an organic thin film element according to still another embodiment of the present invention, a transfer material is prepared by forming an organic thin film layer on a temporary support by a wet method, and the organic thin film layer of the transfer material is formed. The side faces the film-forming surface of the substrate, and the space between the transfer material and the film-forming surface is depressurized to bring them into close contact with each other, heating, and peeling off the temporary support, The organic thin film element is manufactured by a peeling transfer method of transferring the organic thin film layer to the substrate, and the laminate comprising an arbitrary combination of a continuous planar organic thin film layer and a fine pattern organic thin film layer is peeled and transferred. It is formed on the substrate by repeating the method.
【００１５】青、緑及び赤の発光画素が繰り返し隣接し
て形成されるように、それぞれ青、緑及び赤の有機薄膜
層を微細パターン状に繰り返し剥離転写するのが好まし
い。Preferably, the blue, green and red organic thin film layers are repeatedly peeled and transferred in a fine pattern so that the blue, green and red light emitting pixels are repeatedly formed adjacent to each other.
【００１６】有機薄膜層は少なくとも発光性有機化合物
又はキャリア輸送性有機化合物を含むのが好ましい。The organic thin film layer preferably contains at least a light emitting organic compound or a carrier transporting organic compound.
【００１７】前記有機薄膜層は基板側から順にホール輸
送性有機薄膜層、発光性有機薄膜層及び電子輸送性有機
薄膜層を有するのが好ましい。また発光性有機薄膜層は
青、緑及び赤の発光画素を繰り返し隣接して有するのが
好ましい。The organic thin film layer preferably has a hole transporting organic thin film layer, a light emitting organic thin film layer and an electron transporting organic thin film layer in this order from the substrate side. Further, it is preferable that the light emitting organic thin film layer has blue, green and red light emitting pixels repeatedly adjacent to each other.
【００１８】前記マスク開口部は基板側から転写材料側
に拡開するテーパ状であるのが好ましい。また前記マス
クは各開口部に連通する減圧孔を有し、減圧孔を介して
前記空間内を減圧するのが好ましい。さらに前記減圧孔
は前記マスクの底面に設けられた溝を有するのが好まし
い。前記マスクは金属、ガラス、セラミック及び耐熱性
樹脂のいずれかからなるのが好ましい。Preferably, the mask opening is tapered so as to expand from the substrate side to the transfer material side. Further, it is preferable that the mask has a decompression hole communicating with each opening, and the inside of the space is decompressed through the decompression hole. Further, it is preferable that the decompression hole has a groove provided on the bottom surface of the mask. The mask is preferably made of any one of metal, glass, ceramic and heat resistant resin.
【００１９】基板は基板支持体とその上に形成された透
明導電層からなるのが好ましい。The substrate preferably comprises a substrate support and a transparent conductive layer formed thereon.
【００２０】[0020]
【発明の実施の形態】まず添付図面を参照して本発明の
有機薄膜素子の製造方法を説明し、次いで有機薄膜素子
を構成する材料を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a method for manufacturing an organic thin film device according to the present invention will be described with reference to the accompanying drawings, and then the materials constituting the organic thin film device will be described.
【００２１】[1] 有機薄膜素子の製造方法 (1) 第一の態様 図１〜図３は本発明の第一の態様による有機薄膜素子の
製造方法を実施するための装置を示す。この装置は、基
板支持体101と、その上に設けられた透明導電層102と、
透明導電層102を包囲するように基板支持体101上に設け
られたマスク枠103とを有する。マスク枠103には透明導
電層102と転写材料110との間の空間105に連通する減圧
孔104が設けられており、減圧孔104はパイプ115により
真空装置（図示せず）に接続している。[1] Method of Manufacturing Organic Thin Film Element (1) First Embodiment FIGS. 1 to 3 show an apparatus for carrying out a method of manufacturing an organic thin film element according to a first embodiment of the present invention. The apparatus includes a substrate support 101, a transparent conductive layer 102 provided thereon,
A mask frame 103 provided on the substrate support 101 so as to surround the transparent conductive layer 102. The mask frame 103 is provided with a decompression hole 104 communicating with a space 105 between the transparent conductive layer 102 and the transfer material 110, and the decompression hole 104 is connected to a vacuum device (not shown) by a pipe 115. .
【００２２】転写材料110は仮支持体111の片面に有機薄
膜層112を形成してなる。ロール113に巻かれた転写材料
110を巻き戻し、マスク枠103の上をそれに接するように
して移動させる。これにより、転写材料110とマスク枠1
03及び透明導電層102を有する基板支持体101とに挟まれ
た閉空間105ができる（図１）。転写材料110がマスク枠
103に接した状態で真空装置を作動させると、閉空間105
は減圧状態になるため、転写材料110は透明導電層102に
密着し、図２に示す状態になる。この状態で、熱ヘッド
等により転写材料110の有機薄膜層112を加熱すると、有
機薄膜層112は透明導電層102に接着するので、仮支持体
111を引き剥がし、さらにマスク枠103を取り外すと、透
明導電層102上に有機薄膜層112が連続面状に形成された
有機薄膜素子が得られる（図３）。The transfer material 110 is formed by forming an organic thin film layer 112 on one side of a temporary support 111. Transfer material wound on roll 113
The 110 is rewound and moved over the mask frame 103 so as to be in contact with it. Thereby, the transfer material 110 and the mask frame 1
A closed space 105 is formed between the substrate support 101 having the transparent conductive layer 102 and the transparent conductive layer 102 (FIG. 1). Transfer material 110 is a mask frame
When the vacuum device is operated in contact with 103, the closed space 105
Is in a reduced pressure state, so that the transfer material 110 is in close contact with the transparent conductive layer 102, and is in the state shown in FIG. In this state, when the organic thin film layer 112 of the transfer material 110 is heated by a thermal head or the like, the organic thin film layer 112 adheres to the transparent conductive layer 102.
By peeling off the mask 111 and removing the mask frame 103, an organic thin-film element in which the organic thin-film layer 112 is formed on the transparent conductive layer 102 in a continuous plane is obtained (FIG. 3).
【００２３】(2) 第二の態様 図４は本発明の第二の態様による有機薄膜素子の製造方
法を実施するための装置を示す。転写材料110の巻回ロ
ール116を移動させる機構を有し、かつマスク枠103上を
それと接するようにして、ロール116と同期して移動し
得る遮蔽板120を有する。基板支持体101上の透明導電層
102及びマスク枠103と、遮蔽板120と、転写材料110とに
より包囲された空間は、マスク枠103に設けられた減圧
孔104に連通している。そのため第一の態様と同様に前
記空間を減圧することにより、転写材料110の有機薄膜
層112は透明導電層102に密着し、後は上記と同じ方法で
加熱し、仮支持体111を剥離することにより、透明導電
層102上に有機薄膜層112が連続面状に形成された積層体
が得られる。(2) Second Embodiment FIG. 4 shows an apparatus for carrying out a method for manufacturing an organic thin film device according to a second embodiment of the present invention. It has a mechanism for moving the winding roll 116 of the transfer material 110, and has a shielding plate 120 that can move in synchronization with the roll 116 so as to be in contact with the mask frame 103. Transparent conductive layer on substrate support 101
A space surrounded by the mask frame 102, the mask frame 103, the shielding plate 120, and the transfer material 110 communicates with a decompression hole 104 provided in the mask frame 103. Therefore, as in the first embodiment, the pressure in the space is reduced, so that the organic thin film layer 112 of the transfer material 110 adheres to the transparent conductive layer 102, and thereafter, the temporary support 111 is peeled off by heating in the same manner as described above. Thus, a laminate in which the organic thin film layer 112 is formed on the transparent conductive layer 102 in a continuous plane is obtained.
【００２４】この方法では、転写材料110が小面積で透
明導電層102と接触するので、転写材料110の有機薄膜層
112と透明導電層102との間に空気が残留する恐れは非常
に小さくなる。In this method, since the transfer material 110 contacts the transparent conductive layer 102 in a small area, the organic thin film layer of the transfer material 110
The possibility that air remains between the transparent conductive layer 102 and the transparent conductive layer 102 is extremely small.
【００２５】(3) 上記態様により得られる有機薄膜層の
例 図５は本発明の方法により得られる有機薄膜素子の有機
薄膜層の別の例を示す。この有機薄膜層150は、基板支
持体151上の透明導電層152の上面に、ホール輸送性有機
薄膜層153、発光性有機薄膜層154及び電子輸送性有機薄
膜層155が形成されたものである。この有機薄膜層150
は、上記と同様にして各種の有機薄膜層153〜155を剥離
転写法により順次形成することにより得られる。(3) Example of Organic Thin Film Layer Obtained by the Above Embodiment FIG. 5 shows another example of the organic thin film layer of the organic thin film element obtained by the method of the present invention. The organic thin film layer 150 is obtained by forming a hole transporting organic thin film layer 153, a light emitting organic thin film layer 154, and an electron transporting organic thin film layer 155 on the upper surface of a transparent conductive layer 152 on a substrate support 151. . This organic thin film layer 150
Can be obtained by sequentially forming various organic thin film layers 153 to 155 by a peeling transfer method in the same manner as described above.
【００２６】具体的には、まず仮支持体の片面にホール
輸送性有機化合物の薄膜を形成して第一の転写材料と
し、それを図1に示すようにマスク枠103の上をそれに接
するようにして移動させる。第一の転写材料とマスク枠
103及び透明導電層102とに挟まれた閉空間を減圧状態に
することにより、第一の転写材料を透明導電層102に密
着させる。この状態で、第一の転写材料のホール輸送性
有機化合物薄膜を加熱して、仮支持体を引き剥がし、さ
らにマスク枠103を取り外すと、透明導電層102上にホー
ル輸送性有機薄膜層が連続面状に転写される。次に別の
仮支持体の片面に発光性有機化合物の薄膜を形成して第
二の転写材料とし、それをマスク枠103に接する状態で
ホール輸送性有機薄膜層上まで移動させる。第二の転写
材料とマスク枠103及びホール輸送性有機薄膜層とに挟
まれた閉空間を減圧状態にすることにより、第二の転写
材料をホール輸送性有機薄膜層に密着させる。この状態
で、第二の転写材料の発光性有機化合物薄膜を加熱し
て、仮支持体を引き剥がし、さらにマスク枠103を取り
外すと、透明導電層102上のホール輸送性有機薄膜層上
に発光性有機薄膜層が連続面状に転写される。同様に仮
支持体の片面に電子輸送性有機化合物の薄膜を形成して
なる第三の転写材料を使用して、発光性有機薄膜層上に
電子輸送性有機薄膜層を転写する。Specifically, first, a thin film of a hole-transporting organic compound is formed on one surface of the temporary support to form a first transfer material, which is placed on a mask frame 103 as shown in FIG. And move it. First transfer material and mask frame
The first transfer material is brought into close contact with the transparent conductive layer 102 by reducing the pressure in the closed space between the 103 and the transparent conductive layer 102. In this state, by heating the hole transporting organic compound thin film of the first transfer material, peeling off the temporary support, and removing the mask frame 103, the hole transporting organic thin film layer is continuously formed on the transparent conductive layer 102. It is transferred to a plane. Next, a thin film of a light-emitting organic compound is formed on one surface of another temporary support to form a second transfer material, which is moved to a position above the hole transporting organic thin film layer in contact with the mask frame 103. The closed space sandwiched between the second transfer material, the mask frame 103 and the hole transporting organic thin film layer is evacuated to bring the second transfer material into close contact with the hole transporting organic thin film layer. In this state, the luminous organic compound thin film of the second transfer material is heated, the temporary support is peeled off, and the mask frame 103 is removed, and the luminous organic compound thin film on the transparent conductive layer 102 emits light. The organic thin film layer is transferred to a continuous plane. Similarly, the electron transporting organic thin film layer is transferred onto the light emitting organic thin film layer by using a third transfer material in which a thin film of the electron transporting organic compound is formed on one surface of the temporary support.
【００２７】(4) 第三の態様 図６は本発明の第三の態様による有機薄膜素子の製造方
法を実施するための装置を示す。この方法では、微細パ
ターン状の有機薄膜を基板上に形成することができる。
まずガラス板からなる基板支持体201上に透明導電層202
が設置された基板に、微細パターン状の開口部を有する
マスク（単に「微細マスク」という）203を密着させ
る。図６(a) に示すように、微細マスク203の各開口部2
03ａは、基板側の方が小さくなるようにテーパしてい
る。すなわち、各開口部203ａはテーパ部203ｂを有す
る。また全ての開口部203ａはマスク203の裏面に形成さ
れた減圧孔204を通じて、外部の真空装置に連通してい
る。(4) Third Embodiment FIG. 6 shows an apparatus for carrying out a method for manufacturing an organic thin-film device according to a third embodiment of the present invention. According to this method, a fine patterned organic thin film can be formed on a substrate.
First, a transparent conductive layer 202 is provided on a substrate support 201 made of a glass plate.
A mask (hereinafter simply referred to as a “fine mask”) 203 having a fine pattern opening is brought into close contact with the substrate on which is placed. As shown in FIG. 6A, each opening 2 of the fine mask 203 is formed.
03a is tapered so that the substrate side becomes smaller. That is, each opening 203a has a tapered portion 203b. All the openings 203a are connected to an external vacuum device through decompression holes 204 formed on the back surface of the mask 203.
【００２８】前記態様と同様に、転写材料110を微細マ
スク203の上面に接触させることにより、透明導電層202
と、転写材料110と、微細マスク203とにより包囲された
閉空間105を形成する［図７(a)］。閉空間105を減圧孔2
04を介して真空装置により減圧にすることにより、転写
材料110は微細マスク203のテーパ形状に追随して変形
し、開口部203ａに面する領域のみ透明導電層202に密着
する［図７(b)］。両者の密着面を加熱した後、転写材
料110の仮支持体111を剥離することにより、透明導電層
202上にマスク開口部203ａに対応した微細パターン状の
有機薄膜層210が転写される（図８）。As in the above-described embodiment, the transfer material 110 is brought into contact with the upper surface of the fine mask 203 so that the transparent conductive layer 202 is formed.
Then, a closed space 105 surrounded by the transfer material 110 and the fine mask 203 is formed (FIG. 7A). Depressurization hole 2 in closed space 105
When the pressure is reduced by a vacuum device via the substrate 04, the transfer material 110 is deformed following the tapered shape of the fine mask 203, and adheres to the transparent conductive layer 202 only in a region facing the opening 203a [FIG. )]. After heating the contact surfaces of both, the temporary support 111 of the transfer material 110 is peeled off, so that the transparent conductive layer
An organic thin film layer 210 having a fine pattern corresponding to the mask opening 203a is transferred onto the mask 202 (FIG. 8).
【００２９】(5) 第三の態様により得られる有機薄膜層
の例 図９は、第三の態様により得られる多色有機薄膜層の例
を示す。この例の有機薄膜層310には、青色の発光性有
機化合物部分311、緑色の発光性有機化合物部分312及び
赤色の発光性有機化合物部分313からなる発光単位領域3
10ａが全面に均一に形成されている。(5) Example of Organic Thin Film Layer Obtained by Third Embodiment FIG. 9 shows an example of a multicolor organic thin film layer obtained by the third embodiment. The organic thin film layer 310 of this example has a light emitting unit region 3 composed of a blue light emitting organic compound portion 311, a green light emitting organic compound portion 312 and a red light emitting organic compound portion 313.
10a is uniformly formed on the entire surface.
【００３０】図９の有機薄膜層310も第三の態様による
方法により形成することができる。まず図８に示すよう
に、第一の色（例えば青）の発光性有機化合物部分311
を形成した後に、図10に示すように微細マスク203の開
口部203ａが未転写領域210ａの半分に位置するように、
微細マスク203を位置決めする。図７と同様にして、仮
支持体111に緑色の発光性有機化合物薄膜を形成した転
写材料110を微細マスク203上に位置決めし、減圧及び加
熱、さらに仮支持体111の剥離を行なうことにより緑色
の発光性有機化合物薄膜を未転写領域210ａの半分の領
域に転写する。このようにして緑色の発光性有機化合物
部分312を形成する。同様に、微細マスク203の開口部20
3ａが未転写領域210ａの残り半分の領域に位置するよう
に、微細マスク203を位置決めし、仮支持体111に赤色の
発光性有機化合物薄膜を形成した転写材料110を微細マ
スク203上に位置決めし、減圧及び加熱、さらに仮支持
体111の剥離を行なうことにより赤色の発光性有機化合
物薄膜を転写する。このようにして赤色の発光性有機化
合物部分313を形成する。The organic thin film layer 310 of FIG. 9 can also be formed by the method according to the third embodiment. First, as shown in FIG. 8, a luminescent organic compound portion 311 of a first color (for example, blue)
After forming, as shown in FIG. 10, so that the opening 203a of the fine mask 203 is located in half of the untransferred region 210a,
The fine mask 203 is positioned. In the same manner as in FIG. 7, the transfer material 110 in which the green light-emitting organic compound thin film is formed on the temporary support 111 is positioned on the fine mask 203, and the pressure is reduced, heated, and the temporary support 111 is peeled off. Is transferred to a half area of the untransferred area 210a. Thus, a green light-emitting organic compound portion 312 is formed. Similarly, the opening 20 of the fine mask 203
The fine mask 203 is positioned so that 3a is located in the remaining half area of the untransferred area 210a, and the transfer material 110 in which the red luminescent organic compound thin film is formed on the temporary support 111 is positioned on the fine mask 203. The pressure is reduced, heated, and the temporary support 111 is peeled off to transfer the red light-emitting organic compound thin film. Thus, a red light-emitting organic compound portion 313 is formed.
【００３１】(6) 第三の態様により得られる有機薄膜層
の別の例 図11は、有機薄膜層400がホール輸送性有機薄膜層410、
発光性有機薄膜層420及び電子輸送性有機薄膜層430から
なる例を示す。発光性有機薄膜層420は、青色の発光性
有機化合物部分421、緑色の発光性有機化合物部分422及
び赤色の発光性有機化合物部分423からなる発光単位領
域420ａが全面に均一に形成された構造を有する。(6) Another Example of the Organic Thin Film Layer Obtained by the Third Embodiment FIG. 11 shows that the organic thin film layer 400 is a hole transporting organic thin film layer 410,
An example composed of a light emitting organic thin film layer 420 and an electron transporting organic thin film layer 430 is shown. The light-emitting organic thin film layer 420 has a structure in which a light-emitting unit region 420a composed of a blue light-emitting organic compound portion 421, a green light-emitting organic compound portion 422, and a red light-emitting organic compound portion 423 is uniformly formed on the entire surface. Have.
【００３２】図５に示すのと同じ方法で透明導電層402
上にホール輸送性有機薄膜層410を転写した後、図８〜
９に示したのと同じ方法でホール輸送性有機薄膜層410
上に多色の発光性有機薄膜層420を転写する。最後に図
５と同じ方法で発光性有機薄膜層420上に電子輸送性有
機薄膜層430を転写する。The transparent conductive layer 402 is formed in the same manner as shown in FIG.
After transferring the hole transporting organic thin film layer 410 on top, FIG.
In the same manner as shown in FIG.
The multicolor light-emitting organic thin film layer 420 is transferred onto the upper surface. Finally, the electron transporting organic thin film layer 430 is transferred onto the light emitting organic thin film layer 420 in the same manner as in FIG.
【００３３】(7) 転写材料 (a) 仮支持体 本発明に使用する仮支持体は、化学的及び熱的に安定で
あって、可撓性を有する材料により構成されるべきであ
り、具体的にはフッ素樹脂［例えば４フッ化エチレン樹
脂（PTFE）、３フッ化塩化エチレン樹脂（PCTFE））、
ポリエステル（例えばポリエチレンテレフタレート、ポ
リエチレンナフタレート（PEN）］、ポリアリレート、
ポリカーボネート、ポリオレフィン（例えばポリエチレ
ン、ポリプロピレン）、ポリエーテルスルホン（PES）
等の薄いシート、又はこれらの積層体が好ましい。仮支
持体の厚さは１μｍ〜300μｍが適当であり、特に微細
パターン状の有機薄膜層を形成する場合、３μｍ〜20μ
ｍであるのが好ましい。(7) Transfer Material (a) Temporary Support The temporary support used in the present invention should be composed of a material that is chemically and thermally stable and has flexibility. In general, fluororesin [for example, tetrafluoroethylene resin (PTFE), trifluoroethylene chloride resin (PCTFE)],
Polyester (eg polyethylene terephthalate, polyethylene naphthalate (PEN)), polyarylate,
Polycarbonate, polyolefin (eg, polyethylene, polypropylene), polyether sulfone (PES)
And the like, or a laminate thereof. The thickness of the temporary support is suitably from 1 μm to 300 μm, especially when forming a fine-patterned organic thin film layer, from 3 μm to 20 μm.
m is preferred.
【００３４】(b) 仮支持体への有機薄膜層の形成 バインダーとして高分子化合物を含む有機薄膜層は、湿
式法により仮支持体に形成するのが好ましい。これに
は、有機薄膜層用材料を有機溶剤に所望の濃度に溶解
し、得られた溶液を仮支持体に塗布する。塗布法として
は、有機薄膜層の乾燥膜厚が200 nm以下で均一な膜厚分
布が得られれば特に制限はなく、スピンコート法、グラ
ビアコート法、ディップコート法、キャスト法、ダイコ
ート法、ロールコート法、バーコート法、エクストロー
ジェンコート法、インクジェット塗布法等が挙げられ
る。中でも、ロールツーロールによる生産性の高いエク
ストロージェンコート法が好ましい。(B) Formation of Organic Thin Film Layer on Temporary Support The organic thin film layer containing a polymer compound as a binder is preferably formed on the temporary support by a wet method. For this, the material for the organic thin film layer is dissolved in an organic solvent to a desired concentration, and the resulting solution is applied to a temporary support. The coating method is not particularly limited as long as a uniform film thickness distribution can be obtained with a dry film thickness of the organic thin film layer of 200 nm or less, and a spin coating method, a gravure coating method, a dip coating method, a casting method, a die coating method, a roll coating method, and the like. Examples include a coating method, a bar coating method, an extrusion coating method, and an ink jet coating method. Among them, an extrogen coating method with high productivity by roll-to-roll is preferable.
【００３５】(8) 積層法 基板上に２層以上の有機薄膜を積層する場合、仮支持体
に２層以上の有機薄膜層を積層した後、基板に剥離転写
することにより一回で多層膜を積層することができる
が、仮支持体上に第一の有機薄膜層を剥離転写法により
形成した後、別の有機薄膜層を剥離転写法により順次形
成しても良い。特に隣接する２層の溶剤溶解性が類似し
ている場合、順次形成する方法の方が良い。(8) Lamination method When laminating two or more organic thin films on a substrate, two or more organic thin films are laminated on a temporary support, and then peel-transferred to the substrate to form a multilayer film at one time. Can be stacked, but after the first organic thin film layer is formed on the temporary support by a peeling transfer method, another organic thin film layer may be sequentially formed by a peeling transfer method. In particular, when two adjacent layers have similar solvent solubilities, the method of sequentially forming them is better.
【００３６】(9) 剥離転写法 本発明の方法は有機薄膜層の形成を剥離転写法により行
なうことを特徴とする。剥離転写法は、加熱により有機
薄膜層を軟化させて、下地の透明導電層又は他の有機薄
膜層に接着させた後、仮支持体を剥離することにより有
機薄膜層だけを残留させる、すなわち転写する方法であ
る。加熱手段としては、ラミネータ、赤外線ヒータ、レ
ーザ、熱ヘッド等を利用することができる。熱ヘッドと
しては、例えばファーストラミネータVA-400III（大成
ラミネーター（株）製）や熱転写プリント用の熱ヘッド
等を用いることができる。転写用の温度は特に限定的で
なく、有機薄膜層の材質において変更することができる
が、一般に40〜200℃が好ましく、特に60〜150℃が好ま
しい。(9) Peeling Transfer Method The method of the present invention is characterized in that the organic thin film layer is formed by a peeling transfer method. In the peeling transfer method, the organic thin film layer is softened by heating, adhered to the underlying transparent conductive layer or another organic thin film layer, and then the temporary support is peeled off to leave only the organic thin film layer, that is, transfer. How to As the heating means, a laminator, an infrared heater, a laser, a thermal head, or the like can be used. As the thermal head, for example, a first laminator VA-400III (manufactured by Taisei Laminator Co., Ltd.) or a thermal head for thermal transfer printing can be used. The temperature for the transfer is not particularly limited, and can be changed depending on the material of the organic thin film layer, but is generally preferably 40 to 200 ° C, particularly preferably 60 to 150 ° C.
【００３７】(10) 微細パターン状有機薄膜層の形成 微細パターン状有機薄膜層の形成には、微細パターン状
の開口部を有するマスク（微細マスク）を使用する。マ
スクの材質は限定的でないが、金属、ガラス、セラミッ
ク、耐熱性樹脂等の耐久性があって安価なものが好まし
い。またこれらの材料を組み合わせて使用することもで
きる。また機械的強度及び有機薄膜層の転写精度の観点
から、マスクの厚さは２〜100μｍであるのが好まし
く、５〜60μｍがより好ましい。(10) Formation of Fine Patterned Organic Thin Film Layer In forming the fine patterned organic thin film layer, a mask (fine mask) having a fine patterned opening is used. Although the material of the mask is not limited, a durable and inexpensive material such as metal, glass, ceramic, and heat resistant resin is preferable. Further, these materials can be used in combination. Further, from the viewpoint of mechanical strength and transfer accuracy of the organic thin film layer, the thickness of the mask is preferably 2 to 100 μm, more preferably 5 to 60 μm.
【００３８】転写材料の有機薄膜層が正確にマスクの開
口部の形状通りに下地の透明導電層又は他の有機薄膜層
に接着するように、マスク開口部は基板側より転写材料
側の方が大きくなるようにテーパしているのが好まし
い。テーパの形状は図６に示すものに限定されない。The mask opening is closer to the transfer material than to the substrate so that the organic thin film layer of the transfer material adheres to the underlying transparent conductive layer or another organic thin film layer exactly according to the shape of the opening of the mask. Preferably, it is tapered so that it becomes larger. The shape of the taper is not limited to that shown in FIG.
【００３９】(11) 基板 図1に示すように、基板は基板支持体101とその上に形成
された透明導電層102とからなる。基板支持体101及び透
明導電層102の詳細は後述する。(11) Substrate As shown in FIG. 1, the substrate comprises a substrate support 101 and a transparent conductive layer 102 formed thereon. Details of the substrate support 101 and the transparent conductive layer 102 will be described later.
【００４０】[2] 有機薄膜素子の構成 有機薄膜素子の全体構成は、基板支持体上に透明導電層
／発光性有機薄膜層／背面電極、透明導電層／発光性有
機薄膜層／電子輸送性有機薄膜層／背面電極、透明導電
層／ホール輸送性有機薄膜層／発光性有機薄膜層／電子
輸送性有機薄膜層／背面電極、透明導電層／ホール輸送
性有機薄膜層／発光性有機薄膜層／背面電極、透明導電
層／発光性有機薄膜層／電子輸送性有機薄膜層／電子注
入層／背面電極、透明導電層／ホール注入層／ホール輸
送性有機薄膜層／発光性有機薄膜層／電子輸送性有機薄
膜層／電子注入層／背面電極等をこの順に積層した構
成、これらを逆に積層した構成等であってよい。発光性
有機薄膜層は燐光発光性化合物を含有し、通常、透明導
電層から発光が取り出される。各層に用いる化合物の具
体例については、例えば「月刊ディスプレイ」1998年10
月号別冊の「有機ELディスプレイ」（テクノタイムズ
社）等に記載されている。[2] Structure of Organic Thin Film Device The overall structure of the organic thin film device is as follows: a transparent conductive layer / a luminescent organic thin film layer / a back electrode on a substrate support; a transparent conductive layer / a luminescent organic thin film layer / an electron transporting property. Organic thin film layer / Back electrode, transparent conductive layer / Hole transporting organic thin film layer / Emitting organic thin film layer / Electron transporting organic thin film layer / Back electrode, transparent conductive layer / Hole transporting organic thin film layer / Emitting organic thin film layer / Back electrode, transparent conductive layer / luminescent organic thin film layer / electron transporting organic thin film layer / electron injection layer / back electrode, transparent conductive layer / hole injection layer / hole transporting organic thin film layer / luminescent organic thin film layer / electron A configuration in which a transportable organic thin film layer / an electron injection layer / a back electrode and the like are stacked in this order, a configuration in which these are stacked in reverse order, and the like may be used. The luminescent organic thin film layer contains a phosphorescent compound, and luminescence is usually extracted from the transparent conductive layer. For specific examples of compounds used in each layer, see, for example, “Monthly Display”
It is described in the separate volume “Organic EL Display” (Techno Times), etc.
【００４１】(1) 基板 (a) 基板支持体 基板支持体は、ジルコニア安定化イットリウム（YS
Z）、ガラス等の無機材料、ポリエチレンテレフタレー
ト、ポリブチレンテレフタレート、ポリエチレンナフタ
レート等のポリエステルやポリスチレン、ポリカーボネ
ート、ポリエーテルスルホン、ポリアリレート、アリル
ジグリコールカーボネート、ポリイミド、ポリシクロオ
レフィン、ノルボルネン樹脂、ポリ(クロロトリフルオ
ロエチレン)、テフロン（登録商標）、ポリテトラフル
オロエチレン−ポリエチレン共重合体等の高分子材料等
からなるものであってよい。基板支持体は単一材料で形
成しても、２種以上の材料で形成してもよい。中でも、
フレキシブルな有機薄膜素子を形成するためには高分子
材料が好ましく、耐熱性、寸法安定性、耐溶剤性、電気
絶縁性及び加工性に優れ、且つ低通気性及び低吸湿性で
あるポリエステル、ポリカーボネート、ポリエーテルス
ルホンや、ポリ(クロロトリフルオロエチレン)、テフロ
ン、ポリテトラフルオロエチレン−ポリエチレン共重合
体等のフッ素原子を含む高分子材料がより好ましい。(1) Substrate (a) Substrate support The substrate support is made of zirconia-stabilized yttrium (YS).
Z), inorganic materials such as glass, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polystyrene, polycarbonate, polyether sulfone, polyarylate, allyl diglycol carbonate, polyimide, polycycloolefin, norbornene resin, poly ( (Chlorotrifluoroethylene), Teflon (registered trademark), a polymer material such as polytetrafluoroethylene-polyethylene copolymer, or the like. The substrate support may be formed from a single material or from two or more materials. Among them,
To form a flexible organic thin film element, a polymer material is preferable, and polyester and polycarbonate which are excellent in heat resistance, dimensional stability, solvent resistance, electric insulation and workability, and have low air permeability and low moisture absorption. And a polymer material containing a fluorine atom such as polyethersulfone, poly (chlorotrifluoroethylene), Teflon, and polytetrafluoroethylene-polyethylene copolymer.
【００４２】基板支持体の形状、構造、大きさ等は有機
薄膜素子の用途及び目的に応じて適宜選択することがで
きる。形状は板状とするのが一般的である。構造は単層
構造であっても積層構造であってもよい。基板支持体は
単一の部材で形成しても、２以上の部材で形成してもよ
い。また、基板支持体は無色透明であっても有色透明で
あってもよいが、発光性有機薄膜層から発せられる光を
散乱又は減衰させることがない点で無色透明であるのが
好ましい。The shape, structure, size and the like of the substrate support can be appropriately selected according to the use and purpose of the organic thin film device. The shape is generally plate-like. The structure may be a single layer structure or a laminated structure. The substrate support may be formed of a single member or may be formed of two or more members. The substrate support may be colorless and transparent or colored and transparent, but is preferably colorless and transparent in that light emitted from the luminescent organic thin film layer is not scattered or attenuated.
【００４３】基板支持体の電極側の面、電極と反対側の
面又はその両方に透湿防止層（ガスバリア層）を設けて
もよい。透湿防止層を構成する材料としては窒化ケイ
素、酸化ケイ素等の無機物を用いるのが好ましい。透湿
防止層は高周波スパッタリング法等により成膜できる。
また、基板支持体には必要に応じてハードコート層やア
ンダーコート層を設けてもよい。A moisture permeation preventing layer (gas barrier layer) may be provided on the surface of the substrate support on the electrode side, the surface on the side opposite to the electrode, or both. It is preferable to use an inorganic substance such as silicon nitride or silicon oxide as a material constituting the moisture permeation preventing layer. The moisture permeation preventing layer can be formed by a high frequency sputtering method or the like.
Further, a hard coat layer or an undercoat layer may be provided on the substrate support as needed.
【００４４】(b) 透明導電層（透明電極） 透明導電層は有機化合物層にホール（正孔）を供給する
陽極としての機能を有するが、陰極として機能させるこ
ともできる。以下、透明導電層を陽極とする場合につい
て説明する。(B) Transparent Conductive Layer (Transparent Electrode) The transparent conductive layer has a function as an anode for supplying holes (holes) to the organic compound layer, but may also function as a cathode. Hereinafter, the case where the transparent conductive layer is used as the anode will be described.
【００４５】透明導電層の形状、構造、大きさ等は特に
制限されず、有機薄膜素子の用途及び目的に応じて適宜
選択することができる。透明導電層を形成する材料とし
ては、金属、合金、金属酸化物、電気伝導性化合物、こ
れらの混合物等を用いることができ、好ましくは仕事関
数が４eV以上の材料を用いる。具体例としては、アンチ
モンをドープした酸化スズ（ATO）、フッ素をドープし
た酸化スズ（FTO）、半導性金属酸化物（酸化スズ、酸
化亜鉛、酸化インジウム、酸化インジウムスズ（IT
O）、酸化亜鉛インジウム（IZO）等）、金属（金、銀、
クロム、ニッケル等）、これら金属と導電性金属酸化物
との混合物又は積層物、無機導電性物質（ヨウ化銅、硫
化銅等）、有機導電性材料（ポリアニリン、ポリチオフ
ェン、ポリピロール等）及びこれとITOとの積層物等が
挙げられる。The shape, structure, size and the like of the transparent conductive layer are not particularly limited, and can be appropriately selected depending on the use and purpose of the organic thin film device. As a material for forming the transparent conductive layer, a metal, an alloy, a metal oxide, an electrically conductive compound, a mixture thereof, or the like can be used, and a material having a work function of 4 eV or more is preferably used. Specific examples include tin oxide (ATO) doped with antimony, tin oxide (FTO) doped with fluorine, and semiconductive metal oxides (tin oxide, zinc oxide, indium oxide, indium tin oxide (IT
O), indium zinc oxide (IZO), etc.), metals (gold, silver,
Chromium, nickel, etc.), mixtures or laminates of these metals and conductive metal oxides, inorganic conductive substances (copper iodide, copper sulfide, etc.), organic conductive materials (polyaniline, polythiophene, polypyrrole, etc.) and And a laminate with ITO.
【００４６】透明導電層は印刷法、コーティング法等の
湿式方法、真空蒸着法、スパッタリング法、イオンプレ
ーティング法等の物理的方法、CVD、プラズマCVD法等の
化学的方法等によって基板支持体上に形成することがで
きる。形成方法は透明導電層材料との適性を考慮して適
宜選択すればよい。例えば、透明導電層の材料としてIT
Oを用いる場合には、直流又は高周波スパッタ法、真空
蒸着法、イオンプレーティング法等を用いればよい。ま
た透明導電層の材料として有機導電性材料を用いる場合
には、湿式製膜法を用いてよい。The transparent conductive layer is formed on the substrate support by a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, an ion plating method, or a chemical method such as a CVD method or a plasma CVD method. Can be formed. The formation method may be appropriately selected in consideration of suitability for the transparent conductive layer material. For example, IT as a material for the transparent conductive layer
When O is used, a direct current or high frequency sputtering method, a vacuum evaporation method, an ion plating method, or the like may be used. When an organic conductive material is used as the material of the transparent conductive layer, a wet film forming method may be used.
【００４７】透明導電層のパターニングはフォトリソグ
ラフィー等による化学的エッチング、レーザ等を用いた
物理的エッチング等により行うことができる。またマス
クを用いた真空蒸着やスパッタリング、リフトオフ法、
印刷法等によりパターニングしてもよい。The transparent conductive layer can be patterned by chemical etching using photolithography or the like, physical etching using a laser or the like. In addition, vacuum evaporation and sputtering using a mask, lift-off method,
Patterning may be performed by a printing method or the like.
【００４８】透明導電層の形成位置は有機薄膜素子の用
途及び目的に応じて適宜選択してよいが、基板支持体上
に形成するのが好ましい。このとき透明導電層は基板支
持体の表面全体に形成しても一部のみに形成してもよ
い。The formation position of the transparent conductive layer may be appropriately selected according to the use and purpose of the organic thin film element, but is preferably formed on a substrate support. At this time, the transparent conductive layer may be formed on the entire surface of the substrate support or on only a part thereof.
【００４９】透明導電層の厚さはその材料に応じて適宜
選択すればよいが、通常10nm〜50μmであり、好ましく
は50nm〜20μmである。透明導電層の抵抗値は103Ω／□
以下とするのが好ましく、102Ω／□以下とするのがよ
り好ましい。透明導電層は無色透明であっても有色透明
であってもよい。透明導電層側から発光を取り出すため
には、その透過率は60％以上とするのが好ましく、70％
以上とするのがより好ましい。透過率は分光光度計を用
いた公知の方法に従って測定することができる。The thickness of the transparent conductive layer may be appropriately selected according to the material, but is usually from 10 nm to 50 μm, preferably from 50 nm to 20 μm. The resistance value of the transparent conductive layer is 10 3 Ω / □
Or less, more preferably 10 2 Ω / □ or less. The transparent conductive layer may be colorless and transparent or colored and transparent. In order to extract light emission from the transparent conductive layer side, the transmittance is preferably 60% or more, and 70% or more.
It is more preferable to make the above. The transmittance can be measured according to a known method using a spectrophotometer.
【００５０】また、「透明導電膜の新展開」（沢田豊監
修、シーエムシー刊、1999年）等に詳細に記載されてい
る電極も本発明に適用できる。特に耐熱性の低いプラス
チック基板支持体を用いる場合は、透明導電層材料とし
てITO又はIZOを使用し、150℃以下の低温で製膜するの
が好ましい。Further, the electrodes described in detail in "New Development of Transparent Conductive Film" (edited by Yutaka Sawada, published by CMC, 1999) can also be applied to the present invention. In particular, when a plastic substrate support having low heat resistance is used, it is preferable to use ITO or IZO as a material for the transparent conductive layer and form the film at a low temperature of 150 ° C. or lower.
【００５１】(2) 背面電極 背面電極は有機化合物層に電子を注入する陰極としての
機能を有するが、陽極として機能させることもできる。
以下、背面電極を陰極とする場合について説明する。(2) Back electrode The back electrode has a function as a cathode for injecting electrons into the organic compound layer, but can also function as an anode.
Hereinafter, a case where the back electrode is a cathode will be described.
【００５２】背面電極の形状、構造、大きさ等は特に制
限されず、有機薄膜素子の用途及び目的に応じて適宜選
択することができる。背面電極を形成する材料として
は、金属、合金、金属酸化物、電気伝導性化合物、これ
らの混合物等を用いることができ、好ましくは仕事関数
が4.5eV以下の材料を用いる。具体例としては、アルカ
リ金属（Li、Na、K、Cs等）、アルカリ土類金属（Mg、C
a等）、金、銀、鉛、アルミニウム、ナトリウム−カリ
ウム合金、リチウム−アルミニウム合金、マグネシウム
−銀合金、インジウム、希土類金属（イッテルビウム
等）等が挙げられる。これらは単独で使用してもよい
が、安定性と電子注入性とを両立させるためには２種以
上を併用するのが好ましい。これら材料の中で、電子注
入性の観点からはアルカリ金属及びアルカリ土類金属が
好ましく、保存安定性の観点からはアルミニウムを主体
とする材料が好ましい。ここでアルミニウムを主体とす
る材料とは、アルミニウム単独、アルミニウムと0.01〜
10質量％のアルカリ金属又はアルカリ土類金属との合金
又は混合物（リチウム−アルミニウム合金、マグネシウ
ム−アルミニウム合金等）を指す。背面電極の材料とし
ては、特開平2-15595号、特開平5-121172号等に詳述さ
れているものも使用できる。The shape, structure, size and the like of the back electrode are not particularly limited, and can be appropriately selected according to the use and purpose of the organic thin film element. As a material for forming the back electrode, a metal, an alloy, a metal oxide, an electrically conductive compound, a mixture thereof, or the like can be used, and a material having a work function of 4.5 eV or less is preferably used. Specific examples include alkali metals (Li, Na, K, Cs, etc.) and alkaline earth metals (Mg, C
a), gold, silver, lead, aluminum, sodium-potassium alloy, lithium-aluminum alloy, magnesium-silver alloy, indium, rare earth metals (such as ytterbium) and the like. These may be used alone, but it is preferable to use two or more of them in order to achieve both stability and electron injection properties. Among these materials, alkali metals and alkaline earth metals are preferable from the viewpoint of electron injecting property, and materials mainly composed of aluminum are preferable from the viewpoint of storage stability. Here, the material mainly composed of aluminum refers to aluminum alone, aluminum and 0.01 to
10% by mass of an alloy or mixture with an alkali metal or alkaline earth metal (such as a lithium-aluminum alloy or a magnesium-aluminum alloy). As the material of the back electrode, those described in detail in JP-A Nos. 2-15595 and 5-121172 can be used.
【００５３】背面電極は印刷法、コーティング法等の湿
式方法、真空蒸着法、スパッタリング法、イオンプレー
ティング法等の物理的方法、CVD、プラズマCVD法等の化
学的方法等によって形成することができる。形成方法は
背面電極材料との適性を考慮して適宜選択すればよい。
例えば、背面電極の材料として２種以上の金属等を用い
る場合には、その材料を同時又は順次にスパッタして形
成できる。The back electrode can be formed by a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method or an ion plating method, or a chemical method such as a CVD method or a plasma CVD method. . The formation method may be appropriately selected in consideration of suitability with the back electrode material.
For example, when two or more kinds of metals or the like are used as the material of the back electrode, the materials can be formed by sputtering the materials simultaneously or sequentially.
【００５４】背面電極のパターニングはフォトリソグラ
フィー等による化学的エッチング、レーザ等を用いた物
理的エッチング等により行うことができる。また、マス
クを用いた真空蒸着やスパッタリング、リフトオフ法、
印刷法等によりパターニングしてもよい。The patterning of the back electrode can be performed by chemical etching using photolithography or the like, physical etching using a laser or the like, or the like. In addition, vacuum evaporation and sputtering using a mask, lift-off method,
Patterning may be performed by a printing method or the like.
【００５５】背面電極の形成位置は有機薄膜素子の用途
及び目的に応じて適宜選択してよいが、有機化合物層上
に形成するのが好ましい。このとき背面電極は有機化合
物層の表面全体に形成しても一部のみに形成してもよ
い。また、背面電極と有機化合物層との間にアルカリ金
属又はアルカリ土類金属のフッ化物等からなる誘電体層
を0.1〜５nmの厚さで設置してもよい。誘電体層は真空
蒸着法、スパッタリング法、イオンプレーティング法等
により形成することができる。The formation position of the back electrode may be appropriately selected according to the use and purpose of the organic thin film element, but is preferably formed on the organic compound layer. At this time, the back electrode may be formed on the entire surface of the organic compound layer or only on a part thereof. Also, a dielectric layer made of an alkali metal or alkaline earth metal fluoride or the like may be provided with a thickness of 0.1 to 5 nm between the back electrode and the organic compound layer. The dielectric layer can be formed by a vacuum deposition method, a sputtering method, an ion plating method, or the like.
【００５６】背面電極の厚さはその材料に応じて適宜選
択すればよいが、通常10nm〜５μmであり、好ましくは5
0nm〜１μmである。背面電極は透明であっても不透明で
あってもよい。透明背面電極は、上述した材料の層を１
〜10nmの厚さに薄く製膜し、更にITOやIZO等の透明導電
性材料を積層して形成してよい。The thickness of the back electrode may be appropriately selected according to the material, but is usually 10 nm to 5 μm, preferably 5 nm.
0 nm to 1 μm. The back electrode may be transparent or opaque. The transparent back electrode is composed of one layer of the material described above.
A thin film having a thickness of about 10 nm may be formed, and a transparent conductive material such as ITO or IZO may be laminated.
【００５７】(3) 発光性有機薄膜層 発光性有機薄膜層は少なくとも一種の発光性化合物を含
有する。発光性化合物は特に限定的ではなく、蛍光発光
性化合物であっても燐光発光性化合物であってもよい。
また蛍光発光性化合物及び燐光発光性化合物を同時に用
いてもよい。本発明においては、発光輝度及び発光効率
の点から燐光発光性化合物を用いることが好ましい。(3) Luminescent Organic Thin Film Layer The luminous organic thin film layer contains at least one luminescent compound. The luminescent compound is not particularly limited, and may be a fluorescent compound or a phosphorescent compound.
Further, a fluorescent compound and a phosphorescent compound may be used at the same time. In the present invention, it is preferable to use a phosphorescent compound from the viewpoint of light emission luminance and light emission efficiency.
【００５８】蛍光発光性化合物としては、ベンゾオキサ
ゾール誘導体、ベンゾイミダゾール誘導体、ベンゾチア
ゾール誘導体、スチリルベンゼン誘導体、ポリフェニル
誘導体、ジフェニルブタジエン誘導体、テトラフェニル
ブタジエン誘導体、ナフタルイミド誘導体、クマリン誘
導体、ペリレン誘導体、ペリノン誘導体、オキサジアゾ
ール誘導体、アルダジン誘導体、ピラリジン誘導体、シ
クロペンタジエン誘導体、ビススチリルアントラセン誘
導体、キナクリドン誘導体、ピロロピリジン誘導体、チ
アジアゾロピリジン誘導体、スチリルアミン誘導体、芳
香族ジメチリデン化合物、金属錯体（8-キノリノール誘
導体の金属錯体、希土類錯体等）、高分子発光性化合物
（ポリチオフェン誘導体、ポリフェニレン誘導体、ポリ
フェニレンビニレン誘導体、ポリフルオレン誘導体等）
等が使用できる。これらは単独で用いても二種以上を混
合して用いてもよい。The fluorescent compounds include benzoxazole derivatives, benzimidazole derivatives, benzothiazole derivatives, styrylbenzene derivatives, polyphenyl derivatives, diphenylbutadiene derivatives, tetraphenylbutadiene derivatives, naphthalimide derivatives, coumarin derivatives, perylene derivatives, perinones. Derivatives, oxadiazole derivatives, aldazine derivatives, pyrazine derivatives, cyclopentadiene derivatives, bisstyrylanthracene derivatives, quinacridone derivatives, pyrrolopyridine derivatives, thiadiazolopyridine derivatives, styrylamine derivatives, aromatic dimethylidene compounds, metal complexes (8-quinolinol Metal complexes of derivatives, rare earth complexes, etc.), polymer light emitting compounds (polythiophene derivatives, polyphenylene derivatives, polyphenylene vinylenes) Derivatives, polyfluorene derivatives and the like)
Etc. can be used. These may be used alone or in combination of two or more.
【００５９】燐光発光性化合物は、好ましくは三重項励
起子から発光することができる化合物であり、オルトメ
タル化錯体及びポルフィリン錯体が好ましい。ポルフィ
リン錯体の中ではポルフィリン白金錯体が好ましい。燐
光発光性化合物は単独で使用しても２種以上を併用して
もよい。The phosphorescent compound is preferably a compound capable of emitting light from a triplet exciton, and an orthometalated complex and a porphyrin complex are preferred. Among porphyrin complexes, porphyrin platinum complexes are preferred. The phosphorescent compounds may be used alone or in combination of two or more.
【００６０】本発明でいうオルトメタル化錯体とは、山
本明夫著「有機金属化学 基礎と応用」, 150頁及び232
頁, 裳華房社（1982年）、H. Yersin著「Photochemistr
y and Photophysics of Coordination Compounds」, 71
〜77頁及び135〜146頁, Springer-Verlag社（1987年）
等に記載されている化合物群の総称である。オルトメタ
ル化錯体を形成する配位子は特に限定されないが、2-フ
ェニルピリジン誘導体、7,8-ベンゾキノリン誘導体、2-
(2-チエニル)ピリジン誘導体、2-(1-ナフチル)ピリジン
誘導体又は2-フェニルキノリン誘導体であるのが好まし
い。これら誘導体は置換基を有してもよい。また、これ
らのオルトメタル化錯体形成に必須の配位子以外に他の
配位子を有していてもよい。オルトメタル化錯体を形成
する中心金属としては、遷移金属であればいずれも使用
可能であり、本発明ではロジウム、白金、金、イリジウ
ム、ルテニウム、パラジウム等を好ましく用いることが
できる。このようなオルトメタル化錯体を含む有機化合
物層は、発光輝度及び発光効率に優れている。オルトメ
タル化錯体については、特願2000-254171号の段落番号0
152〜0180にもその具体例が記載されている。The orthometalated complex referred to in the present invention is described in "Basic and Application of Organometallic Chemistry" by Akio Yamamoto, p.
Page, Shokabosha (1982), Photochemistr by H. Yersin
y and Photophysics of Coordination Compounds, '' 71
-77 and 135-146, Springer-Verlag (1987)
Etc. are generic names of the compound groups described in the above. The ligand forming the orthometalated complex is not particularly limited, but may be a 2-phenylpyridine derivative, a 7,8-benzoquinoline derivative,
It is preferably a (2-thienyl) pyridine derivative, a 2- (1-naphthyl) pyridine derivative or a 2-phenylquinoline derivative. These derivatives may have a substituent. Further, other ligands may be included in addition to the ligands essential for forming these ortho-metalated complexes. As the central metal forming the orthometalated complex, any transition metal can be used, and in the present invention, rhodium, platinum, gold, iridium, ruthenium, palladium and the like can be preferably used. The organic compound layer containing such an ortho-metalated complex is excellent in light emission luminance and light emission efficiency. For the ortho-metalated complex, see Paragraph No. 0 of Japanese Patent Application No. 2000-254171.
Specific examples thereof are also described in 152 to 0180.
【００６１】本発明で用いるオルトメタル化錯体は、In
org. Chem., 30, 1685, 1991、Inorg. Chem., 27, 346
4, 1988、Inorg. Chem., 33, 545, 1994、Inorg. Chim.
Acta, 181, 245, 1991、J. Organomet. Chem., 335, 2
93, 1987、J. Am. Chem. Soc., 107, 1431, 1985 等に
記載の公知の手法で合成することができる。The orthometalated complex used in the present invention is In
org. Chem., 30, 1685, 1991; Inorg. Chem., 27, 346.
4, 1988, Inorg. Chem., 33, 545, 1994, Inorg. Chim.
Acta, 181, 245, 1991; J. Organomet. Chem., 335, 2
93, 1987, J. Am. Chem. Soc., 107, 1431, 1985 and the like.
【００６２】発光性有機薄膜層中の発光性化合物の含有
量は特に制限されないが、例えば0.1〜70質量％であ
り、１〜20質量％であるのが好ましい。発光性化合物の
含有量が0.1質量％未満であるか、又は70質量％を超え
ると、その効果が十分に発揮されない場合がある。The content of the light-emitting compound in the light-emitting organic thin film layer is not particularly limited, but is, for example, 0.1 to 70% by mass, and preferably 1 to 20% by mass. When the content of the luminescent compound is less than 0.1% by mass or more than 70% by mass, the effect may not be sufficiently exhibited.
【００６３】発光性有機薄膜層は必要に応じてホスト化
合物、ホール輸送材料、電子輸送材料、電気的に不活性
なポリマーバインダー等を含有してもよい。The luminescent organic thin film layer may contain a host compound, a hole transporting material, an electron transporting material, an electrically inactive polymer binder and the like, if necessary.
【００６４】ホスト化合物とはその励起状態から発光性
化合物へエネルギー移動が起こり、その結果該発光性化
合物を発光させる化合物である。その具体例としては、
カルバゾール誘導体、トリアゾール誘導体、オキサゾー
ル誘導体、オキサジアゾール誘導体、イミダゾール誘導
体、ポリアリールアルカン誘導体、ピラゾリン誘導体、
ピラゾロン誘導体、フェニレンジアミン誘導体、アリー
ルアミン誘導体、アミノ置換カルコン誘導体、スチリル
アントラセン誘導体、フルオレノン誘導体、ヒドラゾン
誘導体、スチルベン誘導体、シラザン誘導体、芳香族第
三級アミン化合物、スチリルアミン化合物、芳香族ジメ
チリデン化合物、ポルフィリン化合物、アントラキノジ
メタン誘導体、アントロン誘導体、ジフェニルキノン誘
導体、チオピランジオキシド誘導体、カルボジイミド誘
導体、フルオレニリデンメタン誘導体、ジスチリルピラ
ジン誘導体、ナフタレンペリレン等の複素環テトラカル
ボン酸無水物、フタロシアニン誘導体、8-キノリノール
誘導体の金属錯体、メタルフタロシアニン、ベンゾオキ
サゾールやベンゾチアゾール等を配位子とする金属錯
体、ポリシラン化合物、ポリ(N-ビニルカルバゾール)誘
導体、アニリン共重合体、チオフェンオリゴマー、ポリ
チオフェン等の導電性高分子、ポリチオフェン誘導体、
ポリフェニレン誘導体、ポリフェニレンビニレン誘導
体、ポリフルオレン誘導体等が挙げられる。ホスト化合
物は１種単独で使用しても２種以上を併用してもよい。A host compound is a compound that transfers energy from its excited state to a light-emitting compound, thereby causing the light-emitting compound to emit light. As a specific example,
Carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives,
Pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidene compounds, porphyrins Compound, anthraquinodimethane derivative, anthrone derivative, diphenylquinone derivative, thiopyrandioxide derivative, carbodiimide derivative, fluorenylidenemethane derivative, distyrylpyrazine derivative, heterocyclic tetracarboxylic anhydride such as naphthalene perylene, phthalocyanine derivative, Metal complexes of 8-quinolinol derivatives, metal phthalocyanines, metal complexes having benzoxazole, benzothiazole, etc. as ligands, polysilane compounds , Poly (N- vinylcarbazole) derivatives, aniline copolymers, thiophene oligomers, conductive polymers, polythiophene, etc.,
Polyphenylene derivatives, polyphenylene vinylene derivatives, polyfluorene derivatives and the like can be mentioned. The host compound may be used alone or in combination of two or more.
【００６５】ホール輸送材料は陽極からホールを注入す
る機能、ホールを輸送する機能、及び陰極から注入され
た電子を障壁する機能のいずれかを有しているものであ
れば特に限定されず、低分子材料であっても高分子材料
であってもよい。その具体例としては、カルバゾール誘
導体、トリアゾール誘導体、オキサゾール誘導体、オキ
サジアゾール誘導体、イミダゾール誘導体、ポリアリー
ルアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導
体、フェニレンジアミン誘導体、アリールアミン誘導
体、アミノ置換カルコン誘導体、スチリルアントラセン
誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチ
ルベン誘導体、シラザン誘導体、芳香族第三級アミン化
合物、スチリルアミン化合物、芳香族ジメチリデン化合
物、ポルフィリン化合物、ポリシラン化合物、ポリ(N-
ビニルカルバゾール)誘導体、アニリン共重合体、チオ
フェンオリゴマー、ポリチオフェン等の導電性高分子、
ポリチオフェン誘導体、ポリフェニレン誘導体、ポリフ
ェニレンビニレン誘導体、ポリフルオレン誘導体等が挙
げられる。これらは単独で使用しても２種以上を混合し
て使用してもよい。The hole transporting material is not particularly limited as long as it has any of a function of injecting holes from the anode, a function of transporting holes, and a function of blocking electrons injected from the cathode. It may be a molecular material or a polymer material. Specific examples thereof include carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, and styryl anthracene derivatives , Fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidene compounds, porphyrin compounds, polysilane compounds, poly (N-
(Vinyl carbazole) derivatives, aniline copolymers, thiophene oligomers, conductive polymers such as polythiophene,
Examples thereof include a polythiophene derivative, a polyphenylene derivative, a polyphenylenevinylene derivative, and a polyfluorene derivative. These may be used alone or in combination of two or more.
【００６６】電子輸送材料は陰極から電子を注入する機
能、電子を輸送する機能、及び陽極から注入されたホー
ルを障壁する機能のいずれかを有しているものであれば
特に限定されず、例えばトリアゾール誘導体、オキサゾ
ール誘導体、オキサジアゾール誘導体、フルオレノン誘
導体、アントラキノジメタン誘導体、アントロン誘導
体、ジフェニルキノン誘導体、チオピランジオキシド誘
導体、カルボジイミド誘導体、フルオレニリデンメタン
誘導体、ジスチリルピラジン誘導体、ナフタレンペリレ
ン等の複素環テトラカルボン酸無水物、フタロシアニン
誘導体、8-キノリノール誘導体の金属錯体、メタロフタ
ロシアニン、ベンゾオキサゾールやベンゾチアゾール等
を配位子とする金属錯体、アニリン共重合体、チオフェ
ンオリゴマー、ポリチオフェン等の導電性高分子、ポリ
チオフェン誘導体、ポリフェニレン誘導体、ポリフェニ
レンビニレン誘導体、ポリフルオレン誘導体等が使用可
能である。The electron transporting material is not particularly limited as long as it has any of the function of injecting electrons from the cathode, the function of transporting electrons, and the function of blocking the holes injected from the anode. Triazole derivatives, oxazole derivatives, oxadiazole derivatives, fluorenone derivatives, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, naphthalene perylene, etc. Heterocyclic tetracarboxylic anhydrides, phthalocyanine derivatives, metal complexes of 8-quinolinol derivatives, metallophthalocyanines, metal complexes having benzoxazole or benzothiazole as ligands, aniline copolymers, thiophene oligomers, poly Conductive polymer, polythiophene derivatives such as thiophene, polyphenylene derivatives, polyphenylene vinylene derivatives, polyfluorene derivatives and the like can be used.
【００６７】ポリマーバインダーとしては、ポリ塩化ビ
ニル、ポリカーボネート、ポリスチレン、ポリメチルメ
タクリレート、ポリブチルメタクリレート、ポリエステ
ル、ポリスルホン、ポリフェニレンオキシド、ポリブタ
ジエン、炭化水素樹脂、ケトン樹脂、フェノキシ樹脂、
ポリアミド、エチルセルロース、酢酸ビニル、ABS樹
脂、ポリウレタン、メラミン樹脂、不飽和ポリエステ
ル、アルキド樹脂、エポキシ樹脂、シリコン樹脂、ポリ
ビニルブチラール、ポリビニルアセタール等が使用可能
である。ポリマーバインダーを含有する発光性有機薄膜
層は、湿式製膜法によって、容易に且つ大面積に塗布形
成することができる。Examples of the polymer binder include polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polybutyl methacrylate, polyester, polysulfone, polyphenylene oxide, polybutadiene, hydrocarbon resin, ketone resin, phenoxy resin,
Polyamide, ethyl cellulose, vinyl acetate, ABS resin, polyurethane, melamine resin, unsaturated polyester, alkyd resin, epoxy resin, silicone resin, polyvinyl butyral, polyvinyl acetal and the like can be used. The luminescent organic thin film layer containing a polymer binder can be easily applied and formed over a large area by a wet film forming method.
【００６８】発光性有機薄膜層の厚さは10〜200nmとす
るのが好ましく、20〜80nmとするのがより好ましい。厚
さが200nmを超えると駆動電圧が上昇する場合があり、1
0nm未満であると有機薄膜素子が短絡する場合がある。The thickness of the luminescent organic thin film layer is preferably from 10 to 200 nm, more preferably from 20 to 80 nm. If the thickness exceeds 200 nm, the driving voltage may increase.
When the thickness is less than 0 nm, the organic thin film element may be short-circuited.
【００６９】(4) ホール輸送性有機薄膜層 有機薄膜素子は、必要に応じて上述したホール輸送材料
からなるホール輸送性有機薄膜層を有してよい。ホール
輸送性有機薄膜層は上述のポリマーバインダーを含有し
てもよい。ホール輸送性有機薄膜層の厚さは10〜200nm
とするのが好ましく、20〜80nmとするのがより好まし
い。厚さが200nmを越えると駆動電圧が上昇する場合が
あり、10nm未満であると有機薄膜素子が短絡する場合が
ある。(4) Hole transporting organic thin film layer The organic thin film element may have a hole transporting organic thin film layer made of the above-described hole transporting material, if necessary. The hole transporting organic thin film layer may contain the polymer binder described above. The thickness of the hole transporting organic thin film layer is 10 to 200 nm
And more preferably 20 to 80 nm. If the thickness exceeds 200 nm, the driving voltage may increase. If the thickness is less than 10 nm, the organic thin film element may short-circuit.
【００７０】(5) 電子輸送性有機薄膜層 有機薄膜素子は、必要に応じて上述した電子輸送材料か
らなる電子輸送性有機薄膜層を有してよい。電子輸送性
有機薄膜層は上述のポリマーバインダーを含有してもよ
い。電子輸送性有機薄膜層の厚さは10〜200nmとするの
が好ましく、20〜80nmとするのがより好ましい。厚さが
200nmを越えると駆動電圧が上昇する場合があり、10nm
未満であると有機薄膜素子が短絡する場合がある。(5) Electron transporting organic thin film layer The organic thin film element may have an electron transporting organic thin film layer made of the above-mentioned electron transporting material, if necessary. The electron transporting organic thin film layer may contain the polymer binder described above. The thickness of the electron transporting organic thin film layer is preferably from 10 to 200 nm, more preferably from 20 to 80 nm. Thickness
If it exceeds 200 nm, the driving voltage may increase,
If it is less than the above, the organic thin film element may be short-circuited.
【００７１】(6) その他の層 有機薄膜素子は、特開平7-85974号、同7-192866号、同8
-22891号、同10-275682号、同10-106746号等に記載の保
護層を有していてもよい。保護層は有機薄膜素子の最上
面に形成する。ここで最上面とは、基板支持体、透明導
電層、有機化合物層及び背面電極をこの順に積層する場
合には背面電極の外側表面を指し、基板支持体、背面電
極、有機化合物層及び透明導電層をこの順に積層する場
合には透明導電層の外側表面を指す。保護層の形状、大
きさ、厚さ等は特に限定されない。保護層をなす材料
は、水分や酸素等の有機薄膜素子を劣化させ得るものが
素子内に侵入又は透過するのを抑制する機能を有してい
るものであれば特に限定されず、酸化ケイ素、二酸化ケ
イ素、酸化ゲルマニウム、二酸化ゲルマニウム等が使用
できる。(6) Other layers Organic thin-film devices are described in JP-A-7-85974, JP-A-7-192866,
-22891, 10-275682, 10-106746 and the like. The protective layer is formed on the uppermost surface of the organic thin film device. Here, the uppermost surface refers to the outer surface of the back electrode when the substrate support, the transparent conductive layer, the organic compound layer, and the back electrode are laminated in this order, and includes the substrate support, the back electrode, the organic compound layer, and the transparent conductive layer. When the layers are stacked in this order, it refers to the outer surface of the transparent conductive layer. The shape, size, thickness and the like of the protective layer are not particularly limited. The material forming the protective layer is not particularly limited as long as it has a function of suppressing intrusion or permeation of the organic thin film element such as moisture or oxygen into the element. Silicon dioxide, germanium oxide, germanium dioxide and the like can be used.
【００７２】保護層の形成方法は特に限定はなく、例え
ば真空蒸着法、スパッタリング法、反応性スパッタリン
グ法、分子センエピタキシ法、クラスターイオンビーム
法、イオンプレーティング法、プラズマ重合法、プラズ
マCVD法、レーザCVD法、熱CVD法、コーティング法等が
適用できる。The method for forming the protective layer is not particularly limited, and includes, for example, a vacuum deposition method, a sputtering method, a reactive sputtering method, a molecular sen epitaxy method, a cluster ion beam method, an ion plating method, a plasma polymerization method, a plasma CVD method, Laser CVD, thermal CVD, coating, etc. can be applied.
【００７３】また有機薄膜素子には水分や酸素の侵入を
防止するための封止層を設けるのが好ましい。封止層を
形成する材料としては、テトラフルオロエチレンと少な
くとも１種のコモノマーとの共重合体、共重合主鎖に環
状構造を有する含フッ素共重合体、ポリエチレン、ポリ
プロピレン、ポリメチルメタクリレート、ポリイミド、
ポリユリア、ポリテトラフルオロエチレン、ポリクロロ
トリフルオロエチレン、ポリジクロロジフルオロエチレ
ン、クロロトリフルオロエチレン又はジクロロジフルオ
ロエチレンと他のコモノマーとの共重合体、吸水率１％
以上の吸水性物質、吸水率0.1％以下の防湿性物質、金
属（In、Sn、Pb、Au、Cu、Ag、Al、Tl、Ni等）、金属酸
化物（MgO、SiO、SiO2、Al2O3、GeO、NiO、CaO、BaO、F
e2O3、Y2O 3、TiO2等）、金属フッ化物（MgF2、LiF、AlF
3、CaF2等）、液状フッ素化炭素（パーフルオロアルカ
ン、パーフルオロアミン、パーフルオロエーテル等）、
該液状フッ素化炭素に水分や酸素の吸着剤を分散させた
もの等が使用可能である。In addition, moisture and oxygen do not enter the organic thin film element.
It is preferable to provide a sealing layer for prevention. Sealing layer
As a material to be formed,
Copolymer with at least one comonomer, ring in copolymer main chain
Copolymer having a linear structure, polyethylene, poly
Propylene, polymethyl methacrylate, polyimide,
Polyurea, polytetrafluoroethylene, polychloro
Trifluoroethylene, polydichlorodifluoroethylene
, Chlorotrifluoroethylene or dichlorodifluoro
Copolymer of ethylene and other comonomer, 1% water absorption
Above water-absorbing substance, moisture-proof substance with water absorption of 0.1% or less, gold
Genus (In, Sn, Pb, Au, Cu, Ag, Al, Tl, Ni, etc.), metal acid
(MgO, SiO, SiOTwo, AlTwoOThree, GeO, NiO, CaO, BaO, F
eTwoOThree, YTwoO Three, TiOTwoEtc.), metal fluoride (MgFTwo, LiF, AlF
Three, CaFTwo), Liquid fluorinated carbon (perfluoroalka
, Perfluoroamine, perfluoroether, etc.),
Water or oxygen adsorbent was dispersed in the liquid fluorinated carbon
Things and the like can be used.
【００７４】本発明においては、外部からの水分や酸素
を遮断する目的で、有機化合物層を封止板、封止容器等
の封止部材により封止する。本発明では、封止部材を背
面電極側のみに設置しても、発光積層体全体を封止部材
で覆ってもよい。有機化合物層を封止でき外部の空気を
遮断することができれば、封止部材の形状、大きさ、厚
さ等は特に限定されない。封止部材に用いる材料として
は、ガラス、ステンレス、金属（アルミ等）、プラスチ
ック（ポリ(クロロトリフルオロエチレン)、ポリエステ
ル、ポリカーボネート等）、セラミック等が使用でき
る。In the present invention, the organic compound layer is sealed with a sealing member such as a sealing plate or a sealing container in order to block moisture and oxygen from the outside. In the present invention, the sealing member may be provided only on the back electrode side, or the entire light emitting laminate may be covered with the sealing member. The shape, size, thickness, and the like of the sealing member are not particularly limited as long as the organic compound layer can be sealed and external air can be shut off. As a material used for the sealing member, glass, stainless steel, metal (aluminum or the like), plastic (poly (chlorotrifluoroethylene), polyester, polycarbonate or the like), ceramic, or the like can be used.
【００７５】封止部材を発光積層体に設置する際には、
適宜封止剤（接着剤）を用いてよい。発光積層体全体を
封止部材で覆う場合は、封止剤を用いずに封止部材同士
を熱融着してもよい。封止剤としては紫外線硬化樹脂、
熱硬化樹脂、二液型硬化樹脂等が使用可能である。When the sealing member is installed on the light emitting laminate,
A sealant (adhesive) may be used as appropriate. When the entire light emitting laminate is covered with the sealing member, the sealing members may be thermally fused to each other without using the sealing agent. UV curable resin as sealant,
Thermosetting resins, two-component curing resins, and the like can be used.
【００７６】さらに本発明においては、封止容器と有機
薄膜素子の間の空間に水分吸収剤又は不活性液体を挿入
してもよい。水分吸収剤は特に限定されず、具体例とし
ては酸化バリウム、酸化ナトリウム、酸化カリウム、酸
化カルシウム、硫酸ナトリウム、硫酸カルシウム、硫酸
マグネシウム、五酸化リン、塩化カルシウム、塩化マグ
ネシウム、塩化銅、フッ化セシウム、フッ化ニオブ、臭
化カルシウム、臭化バナジウム、モレキュラーシーブ、
ゼオライト、酸化マグネシウム等が挙げられる。不活性
液体としてはパラフィン類、流動パラフィン類、フッ素
系溶剤（パーフルオロアルカン、パーフルオロアミン、
パーフルオロエーテル等）、塩素系溶剤、シリコーンオ
イル類等が使用可能である。Further, in the present invention, a water absorbent or an inert liquid may be inserted into the space between the sealing container and the organic thin film element. The water absorbent is not particularly limited, and specific examples thereof include barium oxide, sodium oxide, potassium oxide, calcium oxide, sodium sulfate, calcium sulfate, magnesium sulfate, phosphorus pentoxide, calcium chloride, magnesium chloride, copper chloride, and cesium fluoride. , Niobium fluoride, calcium bromide, vanadium bromide, molecular sieve,
Zeolite, magnesium oxide and the like can be mentioned. Examples of the inert liquid include paraffins, liquid paraffins, and fluorinated solvents (perfluoroalkane, perfluoroamine,
Perfluoroether), chlorinated solvents, silicone oils and the like can be used.
【００７７】[0077]
【実施例】本発明を以下の実施例によりさらに詳細に説
明するが、本発明はこれらの実施例により限定されるも
のではない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
【００７８】製造例１ ポリビニルカルバゾール（Mw＝63000、アルドリッチ社
製）とオルトメタル化錯体としてのトリス（2-フェニル
ピリジン）イリジウム錯体とを40：１の重量比でジクロ
ロエタンに溶解して得た塗布液を、厚さ５μｍのPETフ
ィルム（帝人（株）製）からなる仮支持体にバーコータ
を用いて塗布し、室温で乾燥させることにより、厚さ40
nmの発光層を仮支持体に形成した第一の転写材料を作
製した。 Production Example 1 A coating obtained by dissolving polyvinyl carbazole (Mw = 63000, manufactured by Aldrich) and tris (2-phenylpyridine) iridium complex as an orthometalated complex in dichloroethane at a weight ratio of 40: 1. The solution was applied to a temporary support made of a PET film (manufactured by Teijin Limited) having a thickness of 5 μm using a bar coater and dried at room temperature to obtain a thickness of 40 μm.
A first transfer material in which a light emitting layer of nm was formed on a temporary support was produced.
【００７９】製造例２ ポリビニルブチラール（Mw＝50000，アルドリッチ社
製）と下記一般式： Production Example 2 Polyvinyl butyral (Mw = 50,000, manufactured by Aldrich) and the following general formula:
【化１】 により表される化合物とを10：20の重量比で、1-ブタノ
ールに溶解して得た塗布液を、厚さ５μｍのPETフィル
ム（帝人（株）製）からなる仮支持体にエクストルージ
ョン型塗布機を用いて塗布し、80℃で２時間真空乾燥さ
せることにより、厚さ60 nmのキャリア輸送層（電子輸
送性有機薄膜層）を仮支持体に形成した第二の転写材料
を作製した。Embedded image And a compound represented by the following formula: dissolved in 1-butanol at a weight ratio of 10:20, and applied to a temporary support made of PET film (manufactured by Teijin Limited) having a thickness of 5 μm. A second transfer material having a 60 nm-thick carrier transporting layer (electron transporting organic thin film layer) formed on a temporary support was prepared by coating using a coating machine and vacuum drying at 80 ° C. for 2 hours. .
【００８０】実施例１ 有機EL素子の作製 基板支持体として厚さ0.5ｍｍで2.5ｃｍ角のガラス板を
用い、この基板支持体を真空チャンバー内に導入し、Sn
O2含有率が10質量％のITOターゲット（インジウム：錫
＝95：５（モル比））を用いて、ＤＣマグネトロンスパ
ッタ（条件：基板支持体の温度250℃、酸素圧１×10-3
Ｐａ）により、ITO薄膜（厚さ0.2μｍ）からなる透明電
極を形成した。ITO薄膜の表面抵抗は10Ω／□であっ
た。 Example 1 Production of Organic EL Device A glass plate of 0.5 mm thick and 2.5 cm square was used as a substrate support, and this substrate support was introduced into a vacuum chamber, and Sn
DC magnetron sputtering (condition: substrate support temperature 250 ° C., oxygen pressure 1 × 10 −3 ) using an ITO target (indium: tin = 95: 5 (molar ratio)) having an O 2 content of 10% by mass.
Pa), a transparent electrode composed of an ITO thin film (thickness: 0.2 μm) was formed. The surface resistance of the ITO thin film was 10Ω / □.
【００８１】透明電極を形成したガラス板を洗浄容器に
入れ、イソプロピルアルコール(IPA)により洗浄した
後、これに酸素プラズマ処理を行った。処理した透明電
極の表面に、ポリ（エチレンジオキシチオフェン）・ポ
リスチレンスルホン酸の水性分散液（BAYER社製、Baytr
on P：固形分1.3質量％）をスピンコートした後、150℃
で２時間真空乾燥し、厚さ100 nmのキャリア輸送層（ホ
ール輸送性有機薄膜層）を形成した。The glass plate on which the transparent electrode was formed was placed in a cleaning vessel, washed with isopropyl alcohol (IPA), and then subjected to an oxygen plasma treatment. On the surface of the treated transparent electrode, an aqueous dispersion of poly (ethylenedioxythiophene) / polystyrene sulfonic acid (manufactured by BAYER, Baytr
on P: solid content 1.3 mass%)
For 2 hours to form a carrier transport layer (hole transport organic thin film layer) having a thickness of 100 nm.
【００８２】得られたホール輸送性有機薄膜層を有する
基板を図１に示す装置に設置し、ホール輸送性有機薄膜
層の上面に製造例１で作製した第一の転写材料を接触さ
せ、真空吸引により第一の転写材料と基板のホール輸送
性有機薄膜層とを密着させた。第一の転写材料側から赤
外線ランプで110℃に加熱し、仮支持体を引き剥がすこ
とにより、ホール輸送性有機薄膜層の上面に形成された
発光性有機薄膜層を得た。The obtained substrate having the hole transporting organic thin film layer was set in the apparatus shown in FIG. 1, and the upper surface of the hole transporting organic thin film layer was brought into contact with the first transfer material prepared in Production Example 1 to form a vacuum. The first transfer material was brought into close contact with the hole transporting organic thin film layer of the substrate by suction. The light emitting organic thin film layer formed on the upper surface of the hole transporting organic thin film layer was obtained by heating the first transfer material side to 110 ° C. with an infrared lamp and peeling off the temporary support.
【００８３】このようにしてホール輸送性有機薄膜層及
び発光性有機薄膜層が形成された基板を図１に示す装置
に設置し、製造例２で作製した第二の転写材料を、真空
吸引により発光性有機薄膜層と密着させた。第二の転写
材料側から赤外線ランプで110℃に加熱し、仮支持体を
引き剥がすことにより、発光性有機薄膜層上に電子輸送
性有機薄膜層を積層した。The substrate on which the hole transporting organic thin film layer and the luminescent organic thin film layer were formed as described above was set in the apparatus shown in FIG. 1, and the second transfer material prepared in Production Example 2 was vacuum-suctioned. It was brought into close contact with the luminescent organic thin film layer. The electron transporting organic thin film layer was laminated on the luminescent organic thin film layer by heating from the second transfer material side to 110 ° C. with an infrared lamp and peeling off the temporary support.
【００８４】電子輸送性有機薄膜層上にパターニングし
た蒸着用のマスク（発光面積が５ｍｍ×５ｍｍとなるマ
スク）を設置し、蒸着装置内でマグネシウム：銀＝10：
１（モル比）を0.25μｍの厚さに蒸着し、銀を0.3μｍ
の厚さに蒸着して、背面電極を形成した。透明電極（陽
極として機能する）及び背面電極よりそれぞれアルミニ
ウムのリード線を結線し、積層構造体を形成した。A mask for evaporation (a mask having a light emitting area of 5 mm × 5 mm) patterned on the electron transporting organic thin film layer was set, and magnesium: silver = 10:
1 (molar ratio) is deposited to a thickness of 0.25 μm, and silver is
To form a back electrode. Aluminum lead wires were connected to the transparent electrode (functioning as an anode) and the back electrode, respectively, to form a laminated structure.
【００８５】得られた積層構造体を、窒素ガスで置換し
たグローブボックス内に入れ、ガラス製の封止容器で紫
外線硬化型接着剤（長瀬チバ（株）製、XNR5493）を用
いて封止し、有機EL素子を作製した。The obtained laminated structure was placed in a glove box purged with nitrogen gas, and sealed with a glass sealing container using an ultraviolet-curable adhesive (XNR5493, manufactured by Nagase Ciba Co., Ltd.). Then, an organic EL device was produced.
【００８６】得られた有機EL素子を以下の方法により評
価した。まずソースメジャーユニット2400型（東洋テク
ニカ（株）製）を用いて、直流電圧を有機EL素子に印加
し、発光させた。200 Cd/m2時の発光効率は、１％、200
0 Cd/m2時の発光効率は３％であった。The obtained organic EL device was evaluated by the following method. First, a DC voltage was applied to the organic EL device using a source measure unit type 2400 (manufactured by Toyo Technica Co., Ltd.) to emit light. Luminous efficiency at 200 Cd / m 2 is 1%, 200
The luminous efficiency at 0 Cd / m 2 was 3%.
【００８７】[0087]
【発明の効果】上記の通り、本発明により有機薄膜素子
を構成する有機薄膜層を仮支持体に湿式法により塗布
し、その有機薄膜層を基板に転写することにより、発光
効率、発光量の均一性及び耐久性に優れた有機EL素子等
の有機薄膜素子を低コストで製造できる。特に有機薄膜
層を仮支持体に一旦塗布する方式を採用しているので、
有機薄膜層を非常に薄膜化できるという利点もある。As described above, the organic thin-film layer constituting the organic thin-film element according to the present invention is applied to a temporary support by a wet method, and the organic thin-film layer is transferred to a substrate. An organic thin film element such as an organic EL element having excellent uniformity and durability can be manufactured at low cost. In particular, since the method of once applying the organic thin film layer to the temporary support is adopted,
There is also an advantage that the organic thin film layer can be made very thin.
【図１】 本発明の一実施例による有機薄膜素子の製造
方法を実施するための装置を示し、(a) は概略断面図で
あり、(b) はマスク枠及び透明導電層を示す平面図であ
る。FIG. 1 shows an apparatus for carrying out a method of manufacturing an organic thin film element according to an embodiment of the present invention, wherein (a) is a schematic sectional view, and (b) is a plan view showing a mask frame and a transparent conductive layer. It is.
【図２】 図１に示す方法において、基板と転写材料と
の間の閉空間を減圧した状態を示す概略断面図である。FIG. 2 is a schematic cross-sectional view showing a state in which a closed space between a substrate and a transfer material is depressurized in the method shown in FIG.
【図３】 本発明の方法により得られる有機薄膜素子の
一例を示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing one example of an organic thin-film element obtained by the method of the present invention.
【図４】 本発明の別の実施例による有機薄膜素子の製
造方法を実施するための装置を示す概略断面図である。FIG. 4 is a schematic cross-sectional view illustrating an apparatus for performing a method of manufacturing an organic thin film device according to another embodiment of the present invention.
【図５】 本発明の方法により得られる有機薄膜素子の
別の例を示す概略断面図である。FIG. 5 is a schematic sectional view showing another example of the organic thin film element obtained by the method of the present invention.
【図６】 本発明のさらに別の実施例による有機薄膜素
子の製造方法を実施するための装置を示し、(a) は概略
断面図であり、(b) は微細マスクを示す平面図である。FIGS. 6A and 6B show an apparatus for carrying out a method of manufacturing an organic thin-film element according to still another embodiment of the present invention, wherein FIG. 6A is a schematic sectional view and FIG. 6B is a plan view showing a fine mask. .
【図７】 図６の製造装置を用いて透明導電層に転写材
料の有機薄膜層を転写する様子を示し、(a) は微細マス
ク上に転写材料を配置させた状態を示す概略断面図であ
り、(b) は微細マスクと転写材料との間の閉空間を減圧
して、転写材料を微細マスクの開口部に密着させた状態
を示す概略断面図である。FIG. 7 is a schematic cross-sectional view showing a state in which an organic thin film layer of a transfer material is transferred to a transparent conductive layer using the manufacturing apparatus of FIG. 6, and (a) is a state in which the transfer material is arranged on a fine mask; FIG. 4B is a schematic cross-sectional view showing a state in which the closed space between the fine mask and the transfer material is decompressed to bring the transfer material into close contact with the opening of the fine mask.
【図８】 図６及び図７に示す方法により得られる有機
薄膜層の一例を示す概略断面図である。FIG. 8 is a schematic sectional view showing an example of an organic thin film layer obtained by the method shown in FIGS. 6 and 7.
【図９】 本発明の方法により得られる有機薄膜素子の
さらに別の例を示す概略断面図である。FIG. 9 is a schematic sectional view showing still another example of the organic thin film element obtained by the method of the present invention.
【図10】 図８に示す有機薄膜層上にさらに微細マスク
を用いて別の有機薄膜層を形成する様子を示す概略断面
図である。FIG. 10 is a schematic cross-sectional view showing a state in which another organic thin film layer is formed on the organic thin film layer shown in FIG. 8 using a finer mask.
【図11】 本発明の方法により得られる有機薄膜素子の
さらに別の例を示す概略断面図である。FIG. 11 is a schematic sectional view showing still another example of the organic thin film element obtained by the method of the present invention.
101，151，201，301，401・・・基板支持体 102，152，202，302，402・・・透明導電層 103・・・マスク枠 104，204・・・減圧孔 105，106・・・閉空間 110，・・・転写材料 111，・・・仮支持体 112，150，210，310，400・・・有機薄膜層 113・・・転写材料巻回用ロール 114・・・仮支持体巻回用ロール 115・・・パイプ 120・・・遮蔽板 153，410・・・ホール輸送性有機薄膜層 154，420・・・発光性有機薄膜層 155，430・・・電子輸送性有機薄膜層 203・・・微細マスク 203ａ・・・微細マスクの開口部 203ｂ・・・開口部のテーパ部 210ａ・・・未転写領域 310ａ，420ａ・・・発光単位領域 311，421・・・青色の発光性有機薄膜層 312，422・・・緑色の発光性有機薄膜層 313，423・・・赤色の発光性有機薄膜層 101, 151, 201, 301, 401 ... substrate support 102, 152, 202, 302, 402 ... transparent conductive layer 103 ... mask frame 104, 204 ... decompression holes 105, 106 ... Closed space 110 ... Transfer material 111 ... Temporary support 112, 150, 210, 310, 400 ... Organic thin film layer 113 ... Transfer material winding roll 114 ... Temporary support roll Reuse roll 115 ・ ・ ・ Pipe 120 ・ ・ ・ Shielding plate 153,410 ・ ・ ・ Hole transporting organic thin film layer 154,420 ・ ・ ・ Emitting organic thin film layer 155,430 ・ ・ ・ Electron transporting organic thin film layer 203 ··· Fine mask 203a ··· Opening of fine mask 203b ··· Tapered portion of opening 210a ··· Untransferred area 310a and 420a ··· Light emitting unit area 311 and 421 ··· Blue emitting organic Thin film layer 312, 422: Green light-emitting organic thin film layer 313, 423: Red light-emitting organic thin film layer
Claims (13)
形成することにより転写材料を作製し、前記転写材料の
前記有機薄膜層側を基板の被成膜面に対面させ、前記転
写材料と前記被成膜面とに挟まれた空間を減圧にするこ
とにより両者を密着させ、加熱し、前記仮支持体を引き
剥がすことにより前記有機薄膜層を前記基板の被成膜面
に転写することを特徴とする有機薄膜素子の製造方法。1. A transfer material is formed by forming an organic thin film layer on a temporary support by a wet method, and the organic thin film layer side of the transfer material faces a film formation surface of a substrate. The space between the substrate and the surface on which the film is to be formed is reduced in pressure so that the two are in close contact with each other, heated, and the organic thin film layer is transferred to the surface on which the substrate is to be formed by peeling off the temporary support. A method for producing an organic thin-film element, comprising:
法において、前記転写材料と前記被成膜面との間に微細
パターン状の開口部を有するマスクを介在させ、前記転
写材料と前記被成膜面とに挟まれたマスク開口部の空間
を減圧して、前記転写材料の前記有機薄膜層と前記被成
膜面とを密着させ、加熱し、前記仮支持体を引き剥がす
ことにより前記マスク開口部の微細パターン状に前記有
機薄膜層を基板に転写することを特徴とする有機薄膜素
子の製造方法。2. The method of manufacturing an organic thin film element according to claim 1, wherein a mask having a fine pattern opening is interposed between the transfer material and the surface on which the film is to be formed. By depressurizing the space of the mask opening portion sandwiched between the film formation surface and the organic thin film layer of the transfer material and the film formation surface in close contact with each other, heating, and peeling off the temporary support A method for manufacturing an organic thin film element, comprising transferring the organic thin film layer to a substrate in a fine pattern at the mask opening.
法において、前記マスク開口部は基板側から転写材料側
に拡開するテーパ状であることを特徴とする有機薄膜素
子の製造方法。3. The method for manufacturing an organic thin film element according to claim 2, wherein the mask opening has a tapered shape expanding from the substrate side to the transfer material side.
製造方法において、前記マスクは各開口部に連通する減
圧孔を有し、減圧孔を介して前記空間内を減圧すること
を特徴とする有機薄膜素子の製造方法。4. The method for manufacturing an organic thin-film element according to claim 2, wherein the mask has a decompression hole communicating with each opening, and depressurizes the space through the decompression hole. A method for manufacturing an organic thin film element.
法において、前記減圧孔は前記マスクの底面に設けられ
た溝を有することを特徴とする有機薄膜素子の製造方
法。5. The method of manufacturing an organic thin-film element according to claim 4, wherein said reduced-pressure hole has a groove provided on a bottom surface of said mask.
膜素子の製造方法において、前記マスクは金属、ガラ
ス、セラミック及び耐熱性樹脂のいずれかからなること
を特徴とする有機薄膜素子の製造方法。6. The method for manufacturing an organic thin film element according to claim 2, wherein the mask is made of any one of metal, glass, ceramic and heat resistant resin. Production method.
形成することにより転写材料を作製し、前記転写材料の
前記有機薄膜層側を前記基板の被成膜面に対面させて密
着させ、加熱し、前記仮支持体を引き剥がすことにより
前記有機薄膜層を前記基板に転写する剥離転写法により
有機薄膜素子を製造する方法であって、連続面状の有機
薄膜層及び微細パターン状の有機薄膜層の任意の組合せ
からなる積層体を前記剥離転写法を繰り返すことにより
前記基板上に形成することを特徴とする有機薄膜素子の
製造方法。7. A transfer material is formed by forming an organic thin film layer on a temporary support by a wet method, and the organic thin film layer side of the transfer material is brought into close contact with the surface on which the film is to be formed of the substrate. Heating, and a method of manufacturing an organic thin film element by a peeling transfer method of transferring the organic thin film layer to the substrate by peeling the temporary support, wherein a continuous planar organic thin film layer and a fine pattern shape A method for manufacturing an organic thin film element, wherein a laminate comprising an arbitrary combination of organic thin film layers is formed on the substrate by repeating the peeling transfer method.
形成することにより転写材料を作製し、前記転写材料の
前記有機薄膜層側を基板の被成膜面に対面させ、前記転
写材料と前記被成膜面とに挟まれた空間を減圧にするこ
とにより両者を密着させ、加熱し、前記仮支持体を引き
剥がして、前記有機薄膜層を前記基板に転写する剥離転
写法により有機薄膜素子を製造する方法であって、連続
面状の有機薄膜層及び微細パターン状の有機薄膜層の任
意の組合せからなる積層体を前記剥離転写法を繰り返す
ことにより前記基板上に形成することを特徴とする有機
薄膜素子の製造方法。8. A transfer material is formed by forming an organic thin-film layer on a temporary support by a wet method, and the organic thin-film layer side of the transfer material faces a film-forming surface of a substrate. The space between the film-forming surface and the film-forming surface is depressurized so that both are brought into close contact with each other, heated, and the temporary support is peeled off, and the organic thin film layer is transferred to the substrate by a peeling transfer method. A method for manufacturing a thin film element, wherein a laminate comprising an arbitrary combination of a continuous planar organic thin film layer and a fine patterned organic thin film layer is formed on the substrate by repeating the peeling transfer method. A method for producing an organic thin-film element.
膜素子の製造方法において、青、緑及び赤の発光画素が
繰り返し隣接して形成されるように、それぞれ青、緑及
び赤の有機薄膜層を微細パターン状に繰り返し剥離転写
することを特徴とする有機薄膜素子の製造方法。9. The method of manufacturing an organic thin-film element according to claim 2, wherein the blue, green, and red light-emitting pixels are repeatedly formed adjacent to each other. A method for producing an organic thin film element, comprising repeatedly peeling and transferring an organic thin film layer in a fine pattern.
膜素子の製造方法において、前記有機薄膜層は少なくと
も発光性有機化合物又はキャリア輸送性有機化合物を含
むことを特徴とする有機薄膜素子の製造方法。10. The method for manufacturing an organic thin film device according to claim 1, wherein the organic thin film layer contains at least a light emitting organic compound or a carrier transporting organic compound. Manufacturing method.
膜素子の製造方法において、前記有機薄膜層は基板側か
ら順にホール輸送性有機薄膜層、発光性有機薄膜層及び
電子輸送性有機薄膜層を有することを特徴とする有機薄
膜素子の製造方法。11. The method for manufacturing an organic thin-film element according to claim 1, wherein the organic thin-film layer is a hole-transporting organic thin-film layer, a light-emitting organic thin-film layer, and an electron-transporting organic thin-film layer in this order from the substrate side. A method for producing an organic thin-film device, comprising a thin-film layer.
法において、前記発光性有機薄膜層は青、緑及び赤の発
光画素を繰り返し隣接して有することを特徴とする有機
薄膜素子の製造方法。12. The method of manufacturing an organic thin-film element according to claim 11, wherein the light-emitting organic thin-film layer has blue, green, and red light-emitting pixels repeatedly adjacent to each other. Method.
膜素子の製造方法において、前記基板は基板支持体とそ
の上に形成された透明導電層からなることを特徴とする
有機薄膜素子の製造方法。13. The method according to claim 1, wherein the substrate comprises a substrate support and a transparent conductive layer formed on the substrate support. Manufacturing method.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001058835A JP2002260855A (en) | 2001-03-02 | 2001-03-02 | Manufacturing method of organic film element |
| US10/084,933 US6767807B2 (en) | 2001-03-02 | 2002-03-01 | Method for producing organic thin film device and transfer material used therein |
| EP02004775A EP1237207B1 (en) | 2001-03-02 | 2002-03-01 | Method for producing organic thin film device |
| AT02004775T ATE540437T1 (en) | 2001-03-02 | 2002-03-01 | PRODUCTION METHOD OF AN ORGANIC THIN FILM DEVICE |
| US10/865,900 US7075106B2 (en) | 2001-03-02 | 2004-06-14 | Method for producing organic thin film device and transfer material used therein |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001058835A JP2002260855A (en) | 2001-03-02 | 2001-03-02 | Manufacturing method of organic film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002260855A true JP2002260855A (en) | 2002-09-13 |
| JP2002260855A5 JP2002260855A5 (en) | 2006-03-16 |
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ID=18918497
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|---|---|---|---|
| JP2001058835A Pending JP2002260855A (en) | 2001-03-02 | 2001-03-02 | Manufacturing method of organic film element |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004319504A (en) * | 2003-04-16 | 2004-11-11 | Eastman Kodak Co | Method for forming organic light emitting device |
| JP2005081299A (en) * | 2003-09-10 | 2005-03-31 | Seiko Epson Corp | Method for forming film, method for forming circuit pattern, method for producing semiconductor device, electro-optical apparatus, and electronic apparatus |
| US7746293B2 (en) | 2004-03-09 | 2010-06-29 | Senzo Kobayashi | Information display apparatus |
-
2001
- 2001-03-02 JP JP2001058835A patent/JP2002260855A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004319504A (en) * | 2003-04-16 | 2004-11-11 | Eastman Kodak Co | Method for forming organic light emitting device |
| JP2005081299A (en) * | 2003-09-10 | 2005-03-31 | Seiko Epson Corp | Method for forming film, method for forming circuit pattern, method for producing semiconductor device, electro-optical apparatus, and electronic apparatus |
| US7746293B2 (en) | 2004-03-09 | 2010-06-29 | Senzo Kobayashi | Information display apparatus |
| US8289232B2 (en) | 2004-03-09 | 2012-10-16 | Senzo Kobayashi | Information display apparatus |
| US8890775B2 (en) | 2004-03-09 | 2014-11-18 | Senzo Kobayashi | Information display apparatus |
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