JP2002256423A - Sintered target for manufacturing transparent electroconductive film, and manufacturing method therefor - Google Patents
Sintered target for manufacturing transparent electroconductive film, and manufacturing method thereforInfo
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- JP2002256423A JP2002256423A JP2001060045A JP2001060045A JP2002256423A JP 2002256423 A JP2002256423 A JP 2002256423A JP 2001060045 A JP2001060045 A JP 2001060045A JP 2001060045 A JP2001060045 A JP 2001060045A JP 2002256423 A JP2002256423 A JP 2002256423A
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- target
- film
- molybdenum
- indium
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、太陽電池などに用
いられる低抵抗透明導電膜をスパッタリング法で製造す
る際に利用される焼結体スパッタリングターゲットに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sintered sputtering target used for producing a low-resistance transparent conductive film used for a solar cell or the like by a sputtering method.
【０００２】[0002]
【従来の技術】透明導電膜は、高い導電性と可視光領域
での高い透過率とを有する。これは、太陽電池や液晶表
示素子、その他各種受光素子の電極などに利用されてい
る他、自動車や建築用の熱線反射膜、帯電防止膜、冷凍
ショーケースなどの各種の防曇用の透明発熱体としても
利用されている。2. Description of the Related Art A transparent conductive film has high conductivity and high transmittance in a visible light region. It is used for electrodes of solar cells, liquid crystal display devices, and other light-receiving devices, as well as for transparent heat generation for various types of anti-fog such as heat ray reflective films, antistatic films, and freezer showcases for automobiles and buildings. It is also used as a body.
【０００３】透明導電膜には、アンチモンやフッ素をド
ーパントとして含む酸化錫や、アルミニウムやガリウム
をドーパントとして含む酸化亜鉛や、錫をドーパントと
して含む酸化インジウムなどが広範に利用されている。
これらの中で、特に錫をドーパントとして含む酸化イン
ジウム膜、すなわち酸化インジウム−錫系膜はＩＴＯ膜
と称され、特に低抵抗の膜となることが良く用いられて
いる。As the transparent conductive film, tin oxide containing antimony or fluorine as a dopant, zinc oxide containing aluminum or gallium as a dopant, indium oxide containing tin as a dopant, and the like are widely used.
Among them, an indium oxide film containing tin as a dopant, that is, an indium oxide-tin film is particularly called an ITO film, and is often used as a film having a particularly low resistance.
【０００４】これらの透明導電膜の製造方法としてはス
パッタリング法が良く用いられている。スパッタリング
法は、蒸気圧の低い材料の成膜や精密な膜厚制御を必要
とする際に有効な手法であり、操作が非常に簡便である
ためである。As a method for producing these transparent conductive films, a sputtering method is often used. The sputtering method is an effective technique when film formation of a material having a low vapor pressure or precise film thickness control is required, and the operation is extremely simple.
【０００５】スパッタリング法では成膜原料をターゲッ
トに成型して用いる。そして、一般に約１０Ｐａ以下の
ガス圧のもとで、被成膜材料を基板とし、この基板を陽
極とし、ターゲットを陰極とし、陽極と陰極との間にグ
ロー放電を起こしてアルゴンプラズマを発生させ、プラ
ズマ中で発生したアルゴン陽イオンを陰極のターゲット
に衝突させ、これによってはじきとばされるターゲット
成分の粒子を基板上に堆積させて膜を形成する。[0005] In the sputtering method, a film-forming material is formed into a target and used. In general, under a gas pressure of about 10 Pa or less, a film-forming material is used as a substrate, this substrate is used as an anode, a target is used as a cathode, and a glow discharge is caused between the anode and the cathode to generate argon plasma. Then, argon cations generated in the plasma are made to collide with a cathode target, whereby particles of a target component to be repelled are deposited on a substrate to form a film.
【０００６】スパッタリング法は、アルゴンプラズマの
発生方法で分類され、高周波プラズマを用いるものは高
周波スパッタリング法、直流プラズマを用いるものは直
流スパッタリング法と呼ばれる。また、ターゲットの裏
側にマグネットを配置してプラズマをターゲット直上に
集中させ、低ガス圧でもアルゴンイオンの発生効率を上
げて成膜する方法をマグネトロンスパッタ法という。通
常、上記の透明導電膜の製造法には直流マグネトロンス
パッタ法が採用されている。[0006] Sputtering methods are classified according to the method of generating argon plasma. Those using high-frequency plasma are called high-frequency sputtering, and those using DC plasma are called DC sputtering. Also, a method of arranging a magnet on the back side of the target to concentrate plasma directly above the target and increasing the argon ion generation efficiency even at a low gas pressure to form a film is called a magnetron sputtering method. Normally, a direct current magnetron sputtering method is employed as a method for producing the above-mentioned transparent conductive film.
【０００７】ところで、前記透明導電膜は低抵抗である
ものの、キャリア濃度が非常に高いため赤外波長領域で
の透過率が低い。これは赤外光がキャリア電子のプラズ
マ吸収により吸収されるためである。したがって、前記
の透明導電膜を太陽電池に用いた場合、赤外領域の光は
十分太陽電池セルに入射することができず、赤外領域の
光はエネルギーとして有効に利用されないことになる。Although the transparent conductive film has a low resistance, it has a very high carrier concentration and thus has a low transmittance in the infrared wavelength region. This is because infrared light is absorbed by plasma absorption of carrier electrons. Therefore, when the above-mentioned transparent conductive film is used in a solar cell, light in the infrared region cannot sufficiently enter the solar cell, and light in the infrared region is not effectively used as energy.
【０００８】こうした欠点を有さない各種の透明導電膜
の作製が試みられているが、スパッタリング法で安定に
良質の膜を作製できるターゲットが存在しないのが実状
である。Although attempts have been made to produce various transparent conductive films that do not have these disadvantages, the reality is that there is no target capable of stably producing a high-quality film by a sputtering method.
【０００９】[0009]
【発明が解決しようとする課題】本発明の目的は、赤外
波長領域で透過率の低下が非常に少なく、しかもＩｎ2
Ｏ3−Ｓｎ系と同等の低抵抗値を有する透明導電膜をス
パッタリング法で再現性良く安定に製造できるターゲッ
トとを提供しようとするものである。An object of the present invention is to provide a reduction in transmittance in the infrared wavelength region is very low, yet In 2
An object of the present invention is to provide a target capable of stably producing a transparent conductive film having a low resistance value equivalent to that of an O 3 -Sn-based material with good reproducibility by a sputtering method.
【００１０】[0010]
【課題を解決するための手段】本発明に係わる透明導電
膜作製用焼結体ターゲットは、インジウムとモリブデン
と酸素とからなる焼結体であり、モリブデンがインジウ
ムに対して原子数比で０．００３〜０．２０の割合で存
在し、焼結体相対密度が９０％以上のものである。そし
て、好ましくは、酸化インジウムのインジウムサイトに
モリブデンが置換固溶しているものである。The sintered body target for producing a transparent conductive film according to the present invention is a sintered body composed of indium, molybdenum, and oxygen. It is present at a ratio of 003 to 0.20 and has a sintered body relative density of 90% or more. Preferably, molybdenum is substituted and dissolved in the indium site of indium oxide.
【００１１】[0011]
【発明の実施の形態】モリブデンのインジウムに対する
原子数比の範囲を規定した理由は、Ｍｏ／Ｉｎの原子比
でモリブデンの存在比が０．００３より少なくなると低
抵抗な膜が得られなくなり、また０．２０より多くなる
と抵抗値が上昇し、赤外波長領域での透過率が減少して
しまうからである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The reason for defining the range of the atomic ratio of molybdenum to indium is that when the abundance ratio of molybdenum is less than 0.003 in the atomic ratio of Mo / In, a low-resistance film cannot be obtained. This is because if it exceeds 0.20, the resistance value increases and the transmittance in the infrared wavelength region decreases.
【００１２】また、ターゲットの焼結体密度が低くなる
と、長時間スパッタリングした場合、エロージョン近傍
にノジュールと呼ばれる突起物が発生して成膜中にアー
キングが起きやすくなる。成膜中にアーキングが起きる
と得られる膜の質が悪化して低抵抗の膜とならない。ノ
ジュール、アーキングの生じやすさは焼結体の密度と密
接に関連があり、本発明の実施例、比較例より密度を９
０％以上にすることで効果的にノジュール、アーキング
を抑制できることがわかる。Further, when the density of the sintered body of the target is low, when sputtering is performed for a long time, a projection called a nodule is generated in the vicinity of the erosion, and arcing easily occurs during film formation. If arcing occurs during film formation, the quality of the obtained film deteriorates and a low-resistance film is not obtained. The easiness of nodules and arcing is closely related to the density of the sintered body.
It is understood that nodule and arcing can be effectively suppressed by setting the content to 0% or more.
【００１３】前記モリブデン元素がターゲット内に含ま
れる形態は、ＭｏＯ3やＭｏＯ2などの酸化モリブデンの
形で酸化インジウム燒結体中に分散している形態でもよ
い。しかし、ＩｎＭｏ4Ｏ6やＩｎ2Ｍｏ3Ｏ12或いはＩｎ
11Ｍｏ4Ｏ62などのインジウムとモリブデンの複合酸化
物の形態で酸化インジウム焼結体中に分散している形態
でもよい。好ましくは、モリブデン原子が酸化インジウ
ムのインジウムサイトに置換固溶してモリブデンが酸化
インジウム燒結体中に原子レベルで分散している方が、
スパッタリングにおいて放電も安定であり、低抵抗の膜
を得るためには有効である。The form in which the molybdenum element is contained in the target may be a form in which the molybdenum oxide such as MoO 3 or MoO 2 is dispersed in the indium oxide sintered body. However, InMo 4 O 6 , In 2 Mo 3 O 12 or In
It may be in the form of a composite oxide of indium and molybdenum, such as 11 Mo 4 O 62 , dispersed in the indium oxide sintered body. Preferably, molybdenum atoms are substituted at indium sites of indium oxide and form a solid solution, and molybdenum is dispersed in the indium oxide sintered body at an atomic level.
Discharge is stable in sputtering, and it is effective to obtain a low-resistance film.
【００１４】本発明に係わる焼結体ターゲットによれ
ば、酸化インジウムにモリブデンがＭｏ／Ｉｎの原子比
で０．００３〜０．２０の割合にて添加されているた
め、スパッタリング法で得られる膜は従来のＩｎ2Ｏ3−
Ｓｎ系よりもキャリア濃度が少なく移動度の高い透明導
電膜、すなわち赤外領域での透過率が低下しないＩｎ2
Ｏ3−Ｓｎ系と同等の比抵抗を有する透明導電膜が得ら
れる。According to the sintered target of the present invention, since molybdenum is added to indium oxide at a Mo / In atomic ratio of 0.003 to 0.20, a film obtained by a sputtering method is used. Is the conventional In 2 O 3 −
A transparent conductive film having a lower carrier concentration and a higher mobility than that of a Sn-based material, that is, In 2 which does not decrease in transmittance in the infrared region
A transparent conductive film having a specific resistance equivalent to that of the O 3 -Sn system can be obtained.
【００１５】また、相対密度を９０％以上とし、モリブ
デンが酸化インジウムのインジウムサイトに置換固溶し
た焼結体ターゲットを用いれば、安定して良質の透明導
電膜を製造することができる。When a relative density is set to 90% or more and a sintered target in which molybdenum is substituted and dissolved in indium sites of indium oxide is used, a high-quality transparent conductive film can be stably manufactured.
【００１６】[0016]
【実施例】以下、実施例によって本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００１７】（実施例１〜８、比較例１〜３）表１に示
したモリブデン含有量が異なるいくつかのモリブデンを
含有する酸化インジウムの焼結体ターゲットを以下の手
順で製造した。(Examples 1 to 8, Comparative Examples 1 to 3) Sintered targets of indium oxide containing several molybdenum oxides having different molybdenum contents shown in Table 1 were produced by the following procedure.
【００１８】平均粒径が１μｍ以下のＩｎ2Ｏ3粉末、及
び平均粒径が１μｍ以下のＭｏＯ3粉末を原料粉末とし
た。Ｉｎ2Ｏ3粉末とＭｏＯ3粉末を所定の割合で樹脂製
ポットに調合して入れ、湿式ボールミルで混合した。そ
の際、硬質ＺｒＯ2ボールを用い、混合時間を２０時間
とした。混合スラリーを取り出し、濾過、乾燥、造粒し
た。造粒物を円形の型に充填し、冷間静水圧プレスを用
い、３ｔｏｎ／ｃｍ2の圧力を掛けて円盤状に成形し
た。In 2 O 3 powder having an average particle size of 1 μm or less and MoO 3 powder having an average particle size of 1 μm or less were used as raw material powders. The In 2 O 3 powder and the MoO 3 powder were mixed at a predetermined ratio into a resin pot and mixed with a wet ball mill. At that time, a hard ZrO 2 ball was used, and the mixing time was 20 hours. The mixed slurry was taken out, filtered, dried and granulated. The granulated product was filled in a circular mold, and was formed into a disk shape by applying a pressure of 3 ton / cm 2 using a cold isostatic press.
【００１９】次に、成形体を雰囲気調整炉に入れ、燒結
した。焼結に際して、炉内容積０．１ｍ3当たり５リッ
トル／分の割合で炉内に酸素を導入しつつ、１５００℃
で５時間燒結した。この際、１０００℃まで１℃／分、
１０００℃から１５００℃までを３℃／分の昇音速度で
昇温した。焼結終了後、酸素の導入を停止し、１５００
℃から１３００℃までを１０℃／分の割合で降温した。
そして、炉内容積０．１ｍ３当たり１０リットル／分の
割合でＡｒを炉内に導入しつつ、１３００℃で３時間保
持した後、放冷した。これにより密度９０％以上のＭｏ
を含有する焼結体を得た。Next, the compact was placed in an atmosphere adjusting furnace and sintered. During sintering, 1500 ° C. while introducing oxygen into the furnace at a rate of 5 liters / minute per 0.1 m 3 of furnace volume.
For 5 hours. At this time, 1 ° C / min up to 1000 ° C,
The temperature was raised from 1000 ° C to 1500 ° C at a rate of 3 ° C / min. After sintering, the introduction of oxygen was stopped and
The temperature was lowered from 10 ° C. to 1300 ° C. at a rate of 10 ° C./min.
Then, the mixture was kept at 1300 ° C. for 3 hours while introducing Ar into the furnace at a rate of 10 liters / minute per 0.1 m 3 of the furnace inner volume, and then allowed to cool. As a result, Mo with a density of 90% or more
Was obtained.
【００２０】次に、得た焼結体のスパッタ面とする面を
カップ砥石で磨き、直径１５２ｍｍ、厚み５ｍｍに加工
してターゲットを得、これをＩｎ系合金を用いてバッキ
ングプレートに貼り合わせ、直流マグネトロンスパッタ
装置に陽極として取り付け、ターゲットの対向面にガラ
ス基板を陰極として取り付けた。ターゲット表面と基板
表面との間隔を７０ｍｍとし、チャンバ１内の真空度が
１×１０-4Ｐａ以下に達した時点で、純度９９．９９９
９重量％のＡｒガスを導入してガス圧０．５Ｐａに調節
し、直流電力３００Ｗをターゲット基板間に投入して、
直流プラズマを発生させて、１５０℃にヒーター加熱し
た厚み1.1ｍｍの＃7059ガラス基板上に膜厚約５００ｎ
ｍの透明導電膜を形成した。Next, the sputtered surface of the obtained sintered body was polished with a cup grindstone, processed to a diameter of 152 mm and a thickness of 5 mm to obtain a target, which was bonded to a backing plate using an In-based alloy. The anode was attached to a DC magnetron sputtering apparatus, and the glass substrate was attached to the opposite surface of the target as a cathode. When the distance between the target surface and the substrate surface is 70 mm, and the degree of vacuum in the chamber 1 reaches 1 × 10 −4 Pa or less, the purity is 99.999.
9 wt% of Ar gas was introduced to adjust the gas pressure to 0.5 Pa, and DC power of 300 W was applied between the target substrates.
A DC plasma is generated and a film thickness of about 500 n is formed on a 1.1 mm-thick # 7059 glass substrate heated to 150 ° C. by a heater.
m of the transparent conductive film was formed.
【００２１】上記の製造条件で作製した透明導電膜の比
抵抗を四探針法で測定し、基板を含めた１０００ｎｍに
おける光透過率を分光光度計で測定した。なお使用した
＃7059基板自体の１０００ｎｍにおける光透過率は９２
％である。The specific resistance of the transparent conductive film prepared under the above manufacturing conditions was measured by a four probe method, and the light transmittance at 1000 nm including the substrate was measured by a spectrophotometer. The light transmittance at 1000 nm of the used # 7059 substrate itself was 92%.
%.
【００２２】また、ターゲットの結晶相を粉末X線回折
測定法で同定してターゲットのＭｏ／Ｉｎの比率を求め
た。なお、用いたターゲットは何れも密度９０％以上で
ある。その結果を表１に示す。Further, the crystal phase of the target was identified by a powder X-ray diffraction measurement method, and the Mo / In ratio of the target was determined. Each of the targets used has a density of 90% or more. Table 1 shows the results.
【００２３】 表１ ターゲット中の 膜の比抵抗 1000nmにおける 備 考 Ｍｏ／Ｉｎ原子比 光透過率（％） 0.002 7.0×10-4Ωcm 90 比較例１ 0.003 3.5×10-4Ωcm 89 実施例１ 0.006 3.3×10-4Ωcm 89 実施例２ 0.01 3.0×10-4Ωcm 88 実施例３ 0.05 2.2×10-4Ωcm 88 実施例４ 0.10 2.1×10-4Ωcm 88 実施例５ 0.13 2.2×10-4Ωcm 88 実施例６ 0.15 2.5×10-4Ωcm 88 実施例７ 0.20 3.1×10-4Ωcm 86 実施例８ 0.22 5.7×10-4Ωcm 83 比較例２ 0.25 7.2×10-4Ωcm 81 比較例３ 表１から明らかなように本発明のＭｏ／Ｉｎの原子比の
範囲、０．００３〜０．２０の範囲において２〜４×１
０-4Ω・ｃｍの低抵抗でかつ１０００ｎｍの波長に対し
て光透過率が高い透明導電膜が得られたことがわかる。
比較のために、従来広範に用いられているＳｎを添加し
たＩＴＯターゲット（１０質量％のＳｎＯ2添加したも
の）を用いて同一のスパッタリング条件で膜を作製した
ところ、比抵抗は２．５×１０-4Ωcmと低いものの、１
０００ｎｍにおける光透過率は６１％であり、赤外光の
透過率が本発明と比べて大幅に低いといえる。Table 1 Specific resistance of the film in the target at 1000 nm Remark Mo / In atomic ratio Light transmittance (%) 0.002 7.0 × 10 −4 Ωcm 90 Comparative Example 1 0.003 3.5 × 10 −4 Ωcm 89 Example 1 0.006 3.3 × 10 -4 Ωcm 89 Example 2 0.01 3.0 × 10 -4 Ωcm 88 Example 3 0.05 2.2 × 10 -4 Ωcm 88 Example 4 0.10 2.1 × 10 -4 Ωcm 88 Example 5 0.13 2.2 × 10 -4 Ωcm 88 Example 6 0.15 2.5 × 10 -4 Ωcm 88 Example 7 0.20 3.1 × 10 -4 Ωcm 86 Example 8 0.22 5.7 × 10 -4 Ωcm 83 Comparative example 2 0.25 7.2 × 10 -4 Ωcm 81 Comparative example 3 Table 1 As is clear from the above, in the range of the Mo / In atomic ratio of the present invention, in the range of 0.003 to 0.20, 2 to 4 × 1
It can be seen that a transparent conductive film having a low resistance of 0 −4 Ω · cm and a high light transmittance at a wavelength of 1000 nm was obtained.
For comparison, a film was produced under the same sputtering conditions using an ITO target to which Sn was widely used (to which SnO 2 was added at 10% by mass), which had been widely used in the past. Although low as 10 -4 Ωcm, 1
The light transmittance at 000 nm is 61%, which means that the transmittance of infrared light is significantly lower than that of the present invention.
【００２４】（実施例９、１０）本例では、ターゲット
中のモリブデン原子の含有形態により得られる膜の比抵
抗がどうか割るかということについて調べた。(Examples 9 and 10) In this example, it was examined whether the specific resistance of a film obtained by the form of molybdenum atoms contained in a target could be divided.
【００２５】密度が約９５％でモリブデン／インジウム
原子比が０．１０であり、ＭｏがＩｎ2Ｏ3のＩｎサイト
に完全に置換固溶して均一に分散しているものと、Ｍｏ
がＭｏＯ3粒子の形態でＩｎ2Ｏ3焼結体中に分散してい
る以外は前記と同じターゲットの二種類を用意した。こ
れらのターゲットを用いて上記の成膜条件を用いて試験
した結果を下表に示す。A material having a density of about 95%, an atomic ratio of molybdenum / indium of 0.10, and Mo being completely substituted and solid-dissolved at the In site of In 2 O 3 ,
Were dispersed in the form of MoO 3 particles in the In 2 O 3 sintered body, and two types of the same targets were prepared. The following table shows the results of tests using these targets under the above-described film forming conditions.
【００２６】 表２ Ｍｏの含有形態 比抵抗 備 考 Ｉｎサイトへの置換固溶 2.1×10-4Ωcm 実施例９ ＭｏＯ3粒子として分散 3.5×10-4Ωcm 実施例10 同一の成膜条件で作製した膜の比抵抗は、Ｉｎサイトに
Ｍｏが置換固溶したターゲットの方が低抵抗であった。
また成膜時の投入パワーを上げていくと実施例１０のタ
ーゲットではアーキングが発生し始めたことから、安定
に成膜できる条件の範囲がＩｎサイトにＭｏが固溶した
実施例９のターゲットより狭いといえる。よって、実施
例のようにInサイトにＭｏが置換固溶したターゲットの
方が、得られる膜特性、成膜安定性の面で有利であり、
好ましい。Table 2 Mo content form Specific resistance Remarks Substitution solid solution at In site 2.1 × 10 −4 Ωcm Example 9 Dispersed as MoO 3 particles 3.5 × 10 −4 Ωcm Example 10 Manufactured under the same film forming conditions The specific resistance of the resulting film was lower in the target in which Mo was substituted and dissolved in the In site.
When the input power during film formation was increased, arcing began to occur in the target of Example 10; therefore, the range of conditions under which the film could be formed stably was smaller than that of the target of Example 9 in which Mo was dissolved in the In site. It can be said that it is narrow. Therefore, the target in which Mo is substituted and dissolved in the In site as in the example is advantageous in terms of the obtained film characteristics and film formation stability,
preferable.
【００２７】（実施例１１〜１５、比較例４〜７）次に
上記の製造法の中で燒結温度と時間を変えて種種の密度
を有する厚み５ｍｍのターゲットを作製し、上述の条件
に従った直流プラズマを発生させて連続スパッタリング
を実施して、アーキングが多発（１０回／分以上）しは
じめるときのエロージョン最大深さの違いを調べた。タ
ーゲットには上記の製造法で製造したＭｏ／Ｉｎ原子比
で０．１０の組成を有し、ＭｏはＩｎサイトに置換固溶
したものを使用した。(Examples 11 to 15 and Comparative Examples 4 to 7) Next, in the above-mentioned production method, sintering temperatures and times were changed to produce 5 mm-thick targets having various densities, and according to the conditions described above. A continuous plasma was generated by generating a DC plasma, and the difference in the maximum erosion depth when arcing started to occur frequently (10 times / min or more) was examined. The target used had a composition of 0.10 in terms of the Mo / In atomic ratio produced by the above-mentioned production method, and Mo was substituted and dissolved in the In site.
【００２８】 表３ ターゲット密度（％） アーキンク゛が多発し始めたときの 備 考 エローシ゛ョン最大深さ(mm) 70 1.2ｍｍから発生 比較例４ 82 2.2ｍｍから発生 比較例５ 86 3.6ｍｍから発生 比較例６ 88 4.1ｍｍから発生 比較例７ 90 最後まで未発生 実施例11 95 最後まで未発生 実施例12 97 最後まで未発生 実施例13 99 最後まで未発生 実施例14 99.8 最後まで未発生 実施例15 このようにターゲットの密度が高いと長時間のスパッタ
リングでもアーキングが発生し難い。よって、９０％以
上の密度を有しなければならない。アーキングが多発し
始めたときにはターゲットエロージョン近傍にはノジュ
ールが大量に発生しており、そのような状態で作製して
得た膜の比抵抗は発生していないときに作製した膜と比
べてその質が大幅に悪化していた。Table 3 Target density (%) Remarks when arcing begins to occur frequently Remarks Maximum depth of erosion (mm) 70 Generated from 1.2 mm Comparative example 4 Generated from 82 2.2 mm Comparative example 5 Generated from 86 3.6 mm Comparative example 6 88 Generated from 4.1 mm Comparative Example 7 90 Not generated to the end Example 11 95 Not generated to the end Example 12 97 Not generated to the end Example 13 99 Not generated to the end Example 14 99.8 Not generated to the end Example 15 This When the density of the target is high as described above, arcing hardly occurs even for a long time of sputtering. Therefore, it must have a density of 90% or more. When arcing began to occur frequently, a large amount of nodules was generated near the target erosion, and the specific resistance of the film produced in such a state was lower than that of the film produced when there was no occurrence. Was significantly worse.
【００２９】[0029]
【発明の効果】以上詳述したように、本発明のターゲッ
トを使用すれば、従来のＩｎ2Ｏ3−Ｓｎ 系と同等の低
抵抗値を有し、しかも赤外光の透過率が高い透明導電膜
を安定に提供でき、太陽電池の窓材などに有効に利用で
きるなどの効果を有する。As described in detail above, when the target of the present invention is used, a transparent material having a low resistance value equivalent to that of the conventional In 2 O 3 —Sn system and having a high infrared light transmittance is obtained. The conductive film can be provided stably and has an effect that it can be effectively used as a window material of a solar cell.
フロントページの続き Ｆターム(参考） 4G030 AA23 AA34 BA03 BA15 GA11 GA27 GA28 4G048 AA03 AB05 AC04 AC06 AD02 AD06 4K029 BA45 BA50 BC09 BD00 DC05 DC09 5F103 AA08 BB22 DD28 HH04 LL13 PP11 5G323 BA02 BB05 Continued on front page F term (reference) 4G030 AA23 AA34 BA03 BA15 GA11 GA27 GA28 4G048 AA03 AB05 AC04 AC06 AD02 AD06 4K029 BA45 BA50 BC09 BD00 DC05 DC09 5F103 AA08 BB22 DD28 HH04 LL13 PP11 5G323 BA02 BB05
Claims (2)
る透明導電膜作成用焼結体であり、モリブデンがインジ
ウムに対して原子数比で０．００３〜０．２０の割合で
存在し、焼結体相対密度が９０％以上であることを特徴
とする透明導電膜作製用焼結体ターゲット。1. A sintered body for producing a transparent conductive film comprising indium, molybdenum and oxygen, wherein molybdenum is present in a ratio of 0.003 to 0.20 in atomic ratio with respect to indium. A sintered body target for producing a transparent conductive film, having a relative density of 90% or more.
て、酸化インジウムのインジウムサイトにモリブデンが
置換固溶していることを特徴とする透明導電膜作製用焼
結体ターゲット。2. The sintered body target for producing a transparent conductive film according to claim 1, wherein molybdenum is substituted and solid-solved in the indium site of indium oxide.
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| JP2001060045A JP2002256423A (en) | 2001-03-05 | 2001-03-05 | Sintered target for manufacturing transparent electroconductive film, and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001060045A JP2002256423A (en) | 2001-03-05 | 2001-03-05 | Sintered target for manufacturing transparent electroconductive film, and manufacturing method therefor |
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ID=18919517
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009510263A (en) * | 2005-09-29 | 2009-03-12 | ハー ツェー シュタルク インコーポレイテッド | Sputtering target, low resistance transparent conductive coating, method for forming such coating and composition for use in the conductive coating |
| WO2020031410A1 (en) * | 2018-08-09 | 2020-02-13 | Ｊｘ金属株式会社 | Oxide sputtering target and production method therefor, and oxide thin film formed using oxide sputtering target |
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| CN114591070A (en) * | 2022-01-11 | 2022-06-07 | 先导薄膜材料有限公司 | Preparation method of high-purity Mo-doped ITO target material |
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2001
- 2001-03-05 JP JP2001060045A patent/JP2002256423A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009510263A (en) * | 2005-09-29 | 2009-03-12 | ハー ツェー シュタルク インコーポレイテッド | Sputtering target, low resistance transparent conductive coating, method for forming such coating and composition for use in the conductive coating |
| US10903376B2 (en) | 2012-08-09 | 2021-01-26 | Sony Corporation | Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element |
| WO2020031410A1 (en) * | 2018-08-09 | 2020-02-13 | Ｊｘ金属株式会社 | Oxide sputtering target and production method therefor, and oxide thin film formed using oxide sputtering target |
| CN111164233A (en) * | 2018-08-09 | 2020-05-15 | 捷客斯金属株式会社 | Oxide sputtering target, method for producing same, and oxide thin film formed using same |
| JPWO2020031410A1 (en) * | 2018-08-09 | 2020-08-20 | Ｊｘ金属株式会社 | Oxide sputtering target, manufacturing method thereof, and oxide thin film formed using the oxide sputtering target |
| KR20210116686A (en) * | 2018-08-09 | 2021-09-27 | 제이엑스금속주식회사 | Oxide sputtering target, manufacturing method thereof, and oxide thin film formed using the sputtering target |
| KR102367663B1 (en) * | 2018-08-09 | 2022-02-28 | 제이엑스금속주식회사 | Oxide sputtering target, manufacturing method thereof, and oxide thin film formed using the sputtering target |
| CN111164233B (en) * | 2018-08-09 | 2022-04-05 | 捷客斯金属株式会社 | Oxide sputtering target, method for producing same, and oxide thin film formed using same |
| CN114591070A (en) * | 2022-01-11 | 2022-06-07 | 先导薄膜材料有限公司 | Preparation method of high-purity Mo-doped ITO target material |
| CN114591070B (en) * | 2022-01-11 | 2023-04-04 | 先导薄膜材料有限公司 | Preparation method of high-purity Mo-doped ITO target material |
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