JP2002245956A - Substrate with projecting member, manufacturing method thereof, and image forming device - Google Patents
Substrate with projecting member, manufacturing method thereof, and image forming deviceInfo
- Publication number
- JP2002245956A JP2002245956A JP2001043484A JP2001043484A JP2002245956A JP 2002245956 A JP2002245956 A JP 2002245956A JP 2001043484 A JP2001043484 A JP 2001043484A JP 2001043484 A JP2001043484 A JP 2001043484A JP 2002245956 A JP2002245956 A JP 2002245956A
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- Prior art keywords
- metal
- substrate
- projection member
- spacer
- content
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板表面に所定の
高さの突起部材を複数本垂直に形成した突起部材付基板
およびその製造方法並びにそれを用いた画像形成装置に
関し、特に、所定の導電性を有し、かつ寸法精度の高い
突起部材を良好に形成できる突起部材付基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate with a projection member having a plurality of projection members of a predetermined height vertically formed on the surface of the substrate, a method of manufacturing the same, and an image forming apparatus using the same. The present invention relates to a substrate with a projection member having conductivity and capable of favorably forming a projection member with high dimensional accuracy.
【０００２】[0002]
【従来技術】近年、プラズマディスプレイパネル（Plas
ma Display Panel、ＰＤＰ）や、プラズマアドレス液晶
パネル（Plasma Address Liquid Crystal、ＰＡＬ
Ｃ）、電界放出型ディスプレイ（Field Emission Displ
ay、以下ＦＥＤという）等の、平面型画像表示装置が開
発され、中でも視野角の広さ、画質の良さでＦＥＤが注
目されている。2. Description of the Related Art In recent years, plasma display panels (Plas
ma Display Panel (PDP) and Plasma Address Liquid Crystal (PAL)
C), field emission display (Field Emission Displ.)
ay (hereinafter referred to as FED), etc., have been developed, and FEDs have attracted attention due to their wide viewing angle and good image quality.
【０００３】かかる画像表示装置は、表面に蛍光体や放
電用の電極等が形成された正面板と背面板との間で、蛍
光体にプラズマや電子ビームを照射して蛍光体を発光さ
せることによって画像を形成するものであり、該正面板
と背面板間の周縁部を枠体によって封止してパネルを構
成するが、該パネル内部を真空状態または減圧状態にす
る必要があるために外部の大気圧によりパネルが撓んで
画像に歪みが生じることを防止するために、正面板と背
面板の間を所定間隔に保つためのスペーサ（突起部材）
を複数本形成することが知られている。In such an image display device, the phosphor is irradiated with plasma or an electron beam to cause the phosphor to emit light between a front plate and a back plate each having a phosphor or a discharge electrode formed on the surface. A panel is formed by sealing a peripheral portion between the front plate and the back plate with a frame, but the inside of the panel needs to be in a vacuum state or a reduced pressure state. A spacer (protruding member) for maintaining a predetermined distance between the front plate and the back plate in order to prevent the panel from bending due to the atmospheric pressure of the above and causing distortion in the image.
It is known that a plurality of are formed.
【０００４】かかる平面型ディスプレイを作製するに
は、例えば、ＰＤＰにおいては、ガラス粉末とセラミッ
クフィラー粉末とを添加したペーストを用いてガラス基
板（背面板）表面に突起部材用成形体を作製した後、こ
れをガラス基板ごと、ガラス基板が変形しない温度で焼
成することによってスペーサ（突起部材）をガラス基板
表面に形成する方法が知られている。In order to manufacture such a flat display, for example, in the case of PDP, after forming a molded body for a projection member on the surface of a glass substrate (back plate) using a paste in which glass powder and ceramic filler powder are added. A method of forming a spacer (protrusion member) on the surface of a glass substrate by firing the glass substrate together with the glass substrate at a temperature at which the glass substrate does not deform is known.
【０００５】ところが、上記方法によれば、スペーサの
高さが２００μｍ程度と低い場合には良好なスペーサを
形成できるものの、スペーサの高さが特に３００μｍ以
上と高くなるとスペーサの焼成時の収縮力によってスペ
ーサが基板から剥離したり変形してしまうという問題が
あった。However, according to the above method, a good spacer can be formed when the height of the spacer is as low as about 200 μm. However, when the height of the spacer is as high as 300 μm or more, the spacer may be shrunk by firing during firing. There has been a problem that the spacer is peeled off or deformed from the substrate.
【０００６】そこで、本出願人らは、特願平１１−２４
５３５４号にてガラス粉末にＳｉ、Ｚｎ、Ａｌ、Ｓｎ、
ＣｕおよびＭｇ等の金属粉末を添加したペーストを用い
てガラス基板表面に突起部材用成形体を作製し、酸化性
雰囲気中で焼成することによって前記金属粉末が酸化膨
張する結果、焼成時の収縮が抑制されてスペーサの剥離
等を防止して良好なスペーサを作製できることを提案し
た。Accordingly, the present applicants have filed a Japanese Patent Application No. 11-24 / 1997.
No. 5354, Si, Zn, Al, Sn,
A molded body for a protruding member is formed on the surface of a glass substrate using a paste to which metal powders such as Cu and Mg are added, and the metal powder is oxidized and expanded by firing in an oxidizing atmosphere. It has been proposed that a good spacer can be manufactured by suppressing the separation of the spacer and the like.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、特願平
１１−２４５３５４号の方法では、スペーサの寸法精度
を高めることはできるものの、金属粉末の性状や分散性
が悪い場合には焼成後のスペーサの壁面部に酸化されて
いない金属粉末が残存することがあり、これとガラスマ
トリックスとのなじみが悪くて、スペーサ壁面部に残存
する金属粉末がガラスマトリックスから脱粒して不純物
としてパネル内に残存したり、脱粒によってスペーサ壁
面部の平滑性が損なわれる恐れがあった。However, in the method of Japanese Patent Application No. 11-245354, the dimensional accuracy of the spacer can be improved, but if the properties and dispersibility of the metal powder are poor, the spacer after firing is not used. The metal powder that is not oxidized may remain on the wall surface, and the affinity between the metal powder and the glass matrix is poor, and the metal powder remaining on the spacer wall may fall off from the glass matrix and remain in the panel as impurities. In addition, there is a fear that the smoothness of the spacer wall surface may be impaired due to the shedding.
【０００８】本発明は、上記課題を解決するためになさ
れたもので、その目的は、基板表面に突起部材（スペー
サ）を形成するに際して、基板からの剥離等がなく、か
つ安定した壁面状態を有する突起部材を形成でき、高精
度で安定な突起部材を備えた突起部材付基板およびその
製造方法並びにそれを用いた画像形成装置を得ることに
ある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and an object of the present invention is to form a projection member (spacer) on a substrate surface without peeling off from the substrate and stabilizing a wall state. An object of the present invention is to provide a substrate with a projection member having a highly accurate and stable projection member capable of forming a projection member having the same, a method of manufacturing the same, and an image forming apparatus using the same.
【０００９】[0009]
【課題を解決するための手段】本発明者等は、前記課題
に対し、突起部材（スペーサ）の構成について検討した
結果、突起部材として、ガラスマトリックス中に、Ｓ
ｉ、Ｚｎ、Ａｌ、Ｓｎ、ＣｕおよびＭｇの群から選ばれ
る少なくとも１種の金属および該金属の酸化物を分散せ
しめるとともに、突起部材の壁面部の金属量／該金属の
酸化物量の比を突起部材内部のそれよりも小さくするこ
とによって、基板表面に高精度な突起部材を形成でき、
かつ安定な壁面状態の突起部材とできることを知見し
た。Means for Solving the Problems The present inventors have studied the structure of the projecting member (spacer) to solve the above-mentioned problem, and as a result, as a projecting member, a glass matrix containing S
At least one metal selected from the group consisting of i, Zn, Al, Sn, Cu and Mg and an oxide of the metal are dispersed, and the ratio of the amount of metal on the wall surface of the projection member to the amount of oxide of the metal is determined. By making it smaller than that inside the member, a highly accurate projection member can be formed on the substrate surface,
It has been found that the projection member can be formed in a stable wall state.
【００１０】すなわち、本発明の突起部材付基板は、基
板表面に、所定の高さを有する複数本の突起部材を前記
基板に対して垂直に形成してなるものであって、前記突
起部材が、ガラスマトリックス中にＳｉ、Ｚｎ、Ａｌ、
Ｓｎ、ＣｕおよびＭｇの群から選ばれる少なくとも１種
の金属および該金属の酸化物が分散してなるとともに、
前記突起部材の壁面部における前記金属の含有量
（ｍM1）と該金属の酸化物の含有量（ｍo1）との比（ｍ
M1／ｍO1）が該突起部材の内部における金属の含有量
（ｍM2）と該金属の酸化物の含有量（ｍo2）との比（ｍ
M2／ｍO2）よりも小さいことを特徴とするものである。That is, a substrate with a projection member according to the present invention comprises a plurality of projection members having a predetermined height formed perpendicularly to the substrate on the surface of the substrate. , Si, Zn, Al in a glass matrix,
At least one metal selected from the group consisting of Sn, Cu and Mg and an oxide of the metal are dispersed,
The ratio (m) between the content of the metal (m M1 ) and the content of the oxide of the metal (m o1 ) on the wall surface of the projection member
M1 / m O1) the content of the metal in the interior of the protrusion member (m M2) and the content of the oxide of the metal (m o2) and the ratio of (m
M2 / mO2 ).
【００１１】ここで、前記突起部材中にＴｉＯ2を含有
することが望ましく、また、前記突起部材の厚みが２０
０μｍ以下、高さ３００μｍ以上である場合に特に有効
である。Here, it is desirable that the projection member contains TiO 2, and that the thickness of the projection member is 20%.
This is particularly effective when the height is 0 μm or less and the height is 300 μm or more.
【００１２】また、本発明の突起部材付基板の製造方法
は、基板表面に、ガラス粉末と、Ｓｉ、Ｚｎ、Ａｌ、Ｓ
ｎ、ＣｕおよびＭｇの群から選ばれる少なくとも１種の
金属粉末との混合物を含有するペーストを用いて所定の
高さを有する複数本の突起部材用成形体を前記基板に対
して垂直となるように形成した後、酸化雰囲気中にて、
突起部材の壁面部における前記金属の含有量（ｍM1）と
該金属の酸化物の含有量（ｍo1）との比（ｍM1／ｍO1）
が該突起部材の内部の金属の含有量（ｍM2）と該金属の
酸化物の含有量（ｍo2）との比（ｍM2／ｍO2）よりも小
さくなるように前記金属粉末を酸化しつつ焼成すること
を特徴とするものである。Further, according to the method of manufacturing a substrate with a projection member of the present invention, a glass powder, Si, Zn, Al, S
Using a paste containing a mixture with at least one kind of metal powder selected from the group consisting of n, Cu and Mg, a plurality of molded members for a projection member having a predetermined height are perpendicular to the substrate. After forming in an oxidizing atmosphere,
Ratio (m M1 / m O1 ) between the content of the metal (m M1 ) and the content of the oxide of the metal (m o1 ) on the wall surface of the projection member
The metal powder is oxidized so that is smaller than the ratio (m M2 / m O2 ) between the content of metal (m M2 ) and the content of oxide of the metal (m o2 ) in the projection member. It is characterized by firing while firing.
【００１３】ここで、前記ガラスの原料粉体１００重量
部に対し、前記金属を１０〜７０重量部の割合で添加す
ること、前記金属の平均粒径が０．１〜４μｍであるこ
とが望ましい。Here, it is desirable that the metal is added at a ratio of 10 to 70 parts by weight with respect to 100 parts by weight of the raw material powder of the glass, and the average particle diameter of the metal is 0.1 to 4 μm. .
【００１４】さらに、本発明の画像形成装置は、上記突
起部材付基板の該突起部材先端面に他の基板を接合し、
２枚の基板が前記突起部材によって所定の間隔で離間し
て平行に配設されてなり、一方の前記基板内面に形成し
た電極に信号電圧を印加することによって画像を形成す
るものである。Further, in the image forming apparatus according to the present invention, another substrate is joined to a tip end surface of the projection member of the substrate with the projection member,
An image is formed by applying a signal voltage to one of the electrodes formed on the inner surface of one of the two substrates, the two substrates being arranged in parallel at a predetermined interval by the protrusion members.
【００１５】[0015]
【発明の実施の形態】本発明の突起部材付基板を備えた
好適な応用例である画像形成装置について、その一例で
あるＦＥＤの概略断面図である図１を基に説明する。図
１において、ＦＥＤ１は、所定間隔で離間して平行に形
成された背面板２と正面板３とが、それらの周縁部に配
設された枠体４とそれぞれ接合し、背面板２、正面板
３、枠体４によってＦＥＤ１内部が封止されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An image forming apparatus as a preferred application example provided with a substrate with a projection member according to the present invention will be described with reference to FIG. 1 which is a schematic sectional view of an FED as an example. In FIG. 1, the FED 1 has a rear plate 2 and a front plate 3 formed in parallel at a predetermined interval and joined to a frame 4 disposed on the periphery thereof, respectively. The inside of the FED 1 is sealed by the face plate 3 and the frame 4.
【００１６】本発明によれば、ＦＥＤ１内には背面板２
と正面板３とを所定の間隔にて支持するために、複数の
スペーサ９が背面板２と正面板３と垂直に設けられてお
り、このスペーサ９の高さｘの調整によって、背面板２
側と正面板３側との距離はｘに一定に保持されている。
なお、図１によれば、複数のスペーサ９はリブ状（長尺
状）の形状からなり、互いに並列になるように配設され
ている。According to the present invention, the back plate 2 is provided in the FED 1.
A plurality of spacers 9 are provided perpendicular to the back plate 2 and the front plate 3 to support the rear plate 2 and the front plate 3 at a predetermined interval.
The distance between the side and the front plate 3 side is kept constant at x.
According to FIG. 1, the plurality of spacers 9 have a rib-like (elongate) shape, and are arranged so as to be parallel to each other.
【００１７】ここで、本発明によれば、スペーサ９は、
ガラスマトリックス中にＳｉ、Ｚｎ、Ａｌ、Ｓｎ、Ｃｕ
およびＭｇの群から選ばれる少なくとも１種の金属（以
下、特定金属と略す。）および該金属の酸化物が分散し
てなるとともに、スペーサ（突起部材）９の壁面部にお
ける特定金属の含有量（ｍM1）と該金属の酸化物の含有
量（ｍo1）との比（ｍM1／ｍO1）が、スペーサ（突起部
材）９の内部における金属の含有量（ｍM2）と該金属の
酸化物の含有量（ｍo2）との比（ｍM2／ｍO2）よりも小
さいことが大きな特徴であり、これによって、スペーサ
用成形体を基板表面に被着形成して同時に焼成する方法
によっても、特定金属が焼成中に酸化するとともに体積
膨張する結果、焼成によるスペーサの収縮を防止するこ
とができ、背面板２または正面板３と一体にスペーサ９
を精度よく形成することができる。これによって、スペ
ーサ９壁面部に酸化されない金属粒子が残存することな
くスペーサ９の壁面部に存在する金属粒子の表面を確実
に酸化させて金属粒子の表面を酸化物にて被覆した形態
とすることにより、スペーサ９壁面部においてガラスマ
トリックスと金属粒子との結合力を高めることができる
結果、スペーサ９の壁面部の安定性を高めることができ
る。Here, according to the present invention, the spacer 9
Si, Zn, Al, Sn, Cu in glass matrix
And at least one metal selected from the group consisting of Mg and Mg (hereinafter abbreviated as a specific metal) and an oxide of the metal are dispersed, and the content of the specific metal in the wall surface of the spacer (projection member) 9 ( The ratio (m M1 / m O1 ) between the content of the metal oxide (m M1 ) and the content of the metal oxide (m o1 ) depends on the content of the metal (m M2 ) inside the spacer (projection member) 9 and the oxidation of the metal. a content (m o2) and the ratio (m M2 / m O2) smaller is larger features than the ones, whereby, by a method of firing simultaneously deposited and formed a spacer molded body to the substrate surface As a result, the specific metal is oxidized during firing and expands in volume, so that shrinkage of the spacer due to firing can be prevented, and the spacer 9 is integrated with the back plate 2 or the front plate 3.
Can be accurately formed. Thereby, the surface of the metal particles existing on the wall surface of the spacer 9 is reliably oxidized without leaving the metal particles that are not oxidized on the wall surface of the spacer 9, and the surface of the metal particle is coated with the oxide. As a result, the bonding force between the glass matrix and the metal particles can be increased on the wall surface of the spacer 9, and as a result, the stability of the wall surface of the spacer 9 can be improved.
【００１８】なお、本発明における特定金属の含有量
（ｍM）と該金属の酸化物の含有量（ｍo）との比（ｍM
／ｍO）とは、図２に示すような突起部材（スペーサ
９）壁面部および研磨面のＸ線回折チャートから特定金
属と該特定金属の酸化物についてリートベルト法によっ
てそれぞれの含有量を測定し、その比（ｍM／ｍO）によ
って求められる値を意味する。In the present invention, the ratio (m M ) between the content (m M ) of the specific metal and the content (m o ) of the oxide of the metal is specified.
/ M O ) means that the specific metal and the oxide of the specific metal are measured by the Rietveld method from an X-ray diffraction chart of the wall surface and the polished surface of the projecting member (spacer 9) as shown in FIG. And the value determined by the ratio (m M / m O ).
【００１９】ここで、特定金属の酸化物の形態としては
結晶相または非晶質（ガラス）相として存在することか
ら特定金属の酸化物が結晶相として存在せず非晶質（ガ
ラス）相として存在する場合、または特定金属の酸化物
結晶の含有比率が同じである場合には、リートベルト法
によって非晶質相の含有比率を算出するとともに、ＥＤ
Ｓ（エネルギー分散型Ｘ線分光分析法）によって非晶質
（ガラス）相中の特定金属の酸化物の含有比率を求める
ことによって、非晶質相として存在する特定金属の酸化
物の含有比率（ｍo）を算出することができる。Since the specific metal oxide is present as a crystalline phase or an amorphous (glass) phase, the specific metal oxide does not exist as a crystalline phase but as an amorphous (glass) phase. When present, or when the content ratio of the oxide crystal of the specific metal is the same, the content ratio of the amorphous phase is calculated by the Rietveld method, and ED
By determining the content ratio of the specific metal oxide in the amorphous (glass) phase by S (energy dispersive X-ray spectroscopy), the content ratio of the specific metal oxide existing as the amorphous phase ( m o ) can be calculated.
【００２０】また、スペーサ９壁面部および内部には、
特定金属粒子が分散含有されることから、所定の導電性
を付与することができ、スペーサ９に蓄積する電荷を速
やかに基板側に逃がしてスペーサ９が帯電することを防
止できる。なお、スペーサ９壁面部の金属粒子および酸
化物の含有比率を焼成条件等にて調整することによっ
て、原料である金属粉末の添加量にあまり左右されず所
望の導電性をスペーサ９の壁面部に付与することができ
る。Further, the spacer 9 has a wall portion and an inner portion,
Since the specific metal particles are dispersed and contained, predetermined conductivity can be imparted, and charges accumulated in the spacer 9 can be quickly released to the substrate side to prevent the spacer 9 from being charged. By adjusting the content ratio of the metal particles and the oxide on the wall surface of the spacer 9 according to the firing conditions and the like, the desired conductivity can be provided on the wall surface of the spacer 9 without being largely influenced by the amount of the metal powder as the raw material. Can be granted.
【００２１】さらに、スペーサ９の先端面のうち、基板
と接触した状態で焼成される側の先端面に存在する特定
金属は、壁面部に存在する金属よりも酸化の度合いは低
く、スペーサ９に蓄積された電荷をスムーズに基板側へ
逃がすことができる。また、焼成によりスペーサ９の壁
面部の金属がスペーサ９の内部の金属に比べてより酸化
された先端面を作製するには、所望によりスペーサ９の
表面をエッチングまたは研磨してもよい。Furthermore, the specific metal present on the front end face of the spacer 9 on the side fired in contact with the substrate has a lower degree of oxidation than the metal existing on the wall surface. The accumulated charges can be smoothly released to the substrate side. Further, in order to produce a front end surface in which the metal on the wall surface of the spacer 9 is more oxidized than the metal inside the spacer 9 by firing, the surface of the spacer 9 may be etched or polished as desired.
【００２２】さらに、スペーサ９壁面部に、特に、特定
金属の酸化物であるＳｎＯ2やＣｕＯを析出させること
によってスペーサ９壁面部おける二次電子放出比を小さ
くでき、スペーサ９の帯電をさらに防止することができ
る。さらにまた、スペーサ９の壁面部に特定金属の酸化
物であるＳｉＯ2、ＺｎＯ、Ａｌ2Ｏ3およびＭｇＯの群
から選ばれる少なくとも１種の酸化物の含有比率を内部
のそれよりも多くすることによって、スペーサ９の壁面
部を内部に比べて白色化できることから、特にＰＤＰや
ＦＥＤにおいては輝度の向上を図ることができる。Further, by depositing SnO 2 or CuO, which is an oxide of a specific metal, on the wall surface of the spacer 9, the secondary electron emission ratio on the wall surface of the spacer 9 can be reduced, and the charging of the spacer 9 is further prevented. can do. Furthermore, the content ratio of at least one oxide selected from the group consisting of SiO 2 , ZnO, Al 2 O 3, and MgO, which are oxides of a specific metal, on the wall surface of the spacer 9 is made larger than that inside. As a result, the wall surface of the spacer 9 can be made whiter than the inside, so that the brightness can be improved particularly in PDPs and FEDs.
【００２３】なお、スペーサ９の厚みは、機械的強度お
よび高密度な画素数を確保するために１０〜２００μ
ｍ、特に５０〜２００μｍであることが望ましく、ま
た、背面板２および正面板３間を放電に必要な間隔に保
つために、スペーサ９の高さを３００μｍ以上、特に３
００〜４０００μｍであることが望ましい。なお、スペ
ーサ９はリブ状（長尺状）に限定されるものではなく、
例えば、長さ方向に一部が欠落した短冊状、格子状であ
ってもよい。The spacer 9 has a thickness of 10 to 200 μm in order to secure mechanical strength and a high number of pixels.
m, especially 50 to 200 μm, and the height of the spacer 9 should be 300 μm or more, especially 3 μm, in order to keep the space between the back plate 2 and the front plate 3 necessary for discharge.
It is desirable that the thickness be 00 to 4000 μm. Note that the spacer 9 is not limited to the rib shape (elongated shape).
For example, it may be a strip shape or a grid shape with a part missing in the length direction.
【００２４】また、スペーサ９の抵抗値は帯電を防止し
つつ、背面板２と正面板３との間の絶縁性を確保するた
めに、スペーサ９の比抵抗ρが１０4〜１０11Ωｃｍで
あることが好ましい。The resistance value of the spacer 9 is set to 10 4 to 10 11 Ωcm in order to secure the insulation between the back plate 2 and the front plate 3 while preventing electrification. Preferably, there is.
【００２５】（各部材の構成）一方、上記背面板２、正
面板３として、石英ガラス、ソーダライムガラス、低ソ
ーダガラス、鉛アルカリケイ酸ガラス、ホウケイ酸ガラ
ス、ビスマス系ガラス等のガラス基板、アルミナ、シリ
カ、ジルコニア等のセラミックス基板、中でも高歪点の
低ソーダガラスからなり、特に、正面板３は透明な材料
にて形成される。(Constitution of Each Member) On the other hand, as the back plate 2 and the front plate 3, glass substrates such as quartz glass, soda lime glass, low soda glass, lead alkali silicate glass, borosilicate glass, bismuth glass, etc. It is made of a ceramic substrate of alumina, silica, zirconia, or the like, especially a low-soda glass having a high strain point. In particular, the front plate 3 is formed of a transparent material.
【００２６】また、背面板２表面には、正電極及び負電
極をなすそれぞれの導体層（図示せず。）が交差するよ
うに配置されて、該交差点で電子放出素子６が構成され
ている。なお、本発明では、上述した正、負電極間に絶
縁体を介装した電子放出素子６に限定されるものではな
く、例えば、表面伝導型や電界放出型、カーボンチュー
ブ等の電子放出素子であってもよい。On the surface of the back plate 2, respective conductor layers (not shown) forming a positive electrode and a negative electrode are arranged so as to cross each other, and the electron-emitting device 6 is formed at the crossing point. . In the present invention, the present invention is not limited to the above-described electron-emitting device 6 in which an insulator is interposed between the positive and negative electrodes. For example, an electron-emitting device such as a surface conduction type, a field emission type, or a carbon tube may be used. There may be.
【００２７】また、電子放出素子６を形成する前記正電
極および負電極用の導体層は、銀（Ａｇ）、アルミニウ
ム（Ａｌ）、ニッケル（Ｎｉ）、白金（Ｐｔ）、金（Ａ
ｕ）、パラジウム（Ｐｄ）等の金属またはそれぞれを主
成分とする合金、及び、アモルファスシリコン、ポリシ
リコン、グラファイト等を用いることができる。また、
正電極用導体層と負電極用導体層との交差点にはＳｉ、
Ｔｉ、Ｇａ、Ｗ、Ａｌ、Ｐｄ等の酸化物や窒化物から選
ばれる少なくとも１種からなる絶縁体が介層される。The conductor layers for the positive and negative electrodes forming the electron-emitting device 6 are made of silver (Ag), aluminum (Al), nickel (Ni), platinum (Pt), gold (A
u), a metal such as palladium (Pd) or an alloy mainly containing each of them, amorphous silicon, polysilicon, graphite, or the like can be used. Also,
At the intersection of the conductor layer for the positive electrode and the conductor layer for the negative electrode, Si,
An insulator made of at least one selected from oxides and nitrides of Ti, Ga, W, Al, Pd and the like is interposed.
【００２８】また、所望により電子放出素子６への不純
物拡散防止のために背面板２と電子放出素子６との間に
シリカ、窒化ケイ素等のセラミックス薄膜等からなる拡
散防止層１２が介在することが望ましい。If necessary, a diffusion prevention layer 12 made of a ceramic thin film such as silica or silicon nitride is interposed between the back plate 2 and the electron emission element 6 to prevent diffusion of impurities into the electron emission element 6. Is desirable.
【００２９】一方、正面板３のパネル５内面には、電子
放出素子６に対向してそれぞれＲ、Ｇ、Ｂ等に発光する
複数色の蛍光体層７（７Ｒ、７Ｂ、７Ｇ）が規則的に配
列したものを１組とした単位画素８が複数配列し、電子
放出素子６への入力信号に応じて放出された電子がそれ
ぞれの電子放出素子６と対向する蛍光体層７に衝突する
ことによって正面板３側にて発光する。On the other hand, on the inner surface of the panel 5 of the front plate 3, a plurality of phosphor layers 7 (7R, 7B, 7G) of a plurality of colors which emit light of R, G, B, etc. are arranged in opposition to the electron-emitting devices 6, respectively. A plurality of unit pixels 8 are arranged as a set, and electrons emitted in response to an input signal to the electron-emitting devices 6 collide with the phosphor layer 7 facing each of the electron-emitting devices 6. Thus, light is emitted on the front plate 3 side.
【００３０】さらに、正面板３表面の蛍光体層７形成部
以外の特定の位置には、ＦＥＤ１における色のにじみを
防止して表示画面のコントラストを高めシャープな画像
を得るためにブラックマトリックス１０が配置されるこ
とが望ましい。ブラックマトリックス１０は黒色または
暗色となる材料からなり、例えば、Ｆｅ、Ｎｉ、Ｃｕ、
Ｍｎ等の酸化物粉末と低融点ガラスとの混合物や金属ク
ロム、グラファイト等を用いることができる。Further, a black matrix 10 is provided at a specific position on the surface of the front plate 3 other than the portion where the phosphor layer 7 is formed, in order to prevent color bleeding in the FED 1 and increase the contrast of the display screen to obtain a sharp image. It is desirable to be arranged. The black matrix 10 is made of a black or dark material, for example, Fe, Ni, Cu,
A mixture of an oxide powder such as Mn and a low-melting glass, metallic chromium, graphite, or the like can be used.
【００３１】また、図１によれば、正面板３と蛍光体層
７との間には、電子放出素子６から蛍光体層７に向かっ
て放出される電子を加速するために、透明なＩＴＯ（イ
ンジウム−錫酸化物）膜１１を形成されているが、本発
明はこれに限られるものではなく、前記電子ビームを加
速するため、および蛍光体層７の散乱した発光を反射し
て発光輝度を高めるために、ＩＴＯ膜１１に代えて正面
板３の蛍光体層７表面に、例えば１００〜３００ｎｍの
アルミニウム（Ａｌ）、銀（Ａｇ）、ニッケル（Ｎ
ｉ）、白金（Ｐｔ）等の金属箔からなるメタルバック
（図示せず）を形成することが望ましい。According to FIG. 1, a transparent ITO is provided between the front plate 3 and the phosphor layer 7 in order to accelerate electrons emitted from the electron-emitting device 6 toward the phosphor layer 7. Although the (indium-tin oxide) film 11 is formed, the present invention is not limited to this. The light emission luminance is set to accelerate the electron beam and reflect the scattered light emitted from the phosphor layer 7. In order to increase the surface roughness, aluminum (Al), silver (Ag), nickel (N) having a thickness of, for example, 100 to 300 nm is formed on the surface of the phosphor layer 7 of the front plate 3 instead of the ITO film 11.
i) It is desirable to form a metal back (not shown) made of a metal foil such as platinum (Pt).
【００３２】（突起部材付基板の製造方法）上述したよ
うな突起部材付基板を作製するには、まず、例えば、平
均粒径０．１〜４μｍのガラス粉末に対して、特定金属
粉末と、所望により無機フィラー粉末と有機バインダや
溶媒等の有機物成分を添加、混合してペーストを調整す
る。(Manufacturing Method of Substrate with Projection Member) In order to produce the substrate with the projection member as described above, first, for example, a glass powder having an average particle diameter of 0.1 to 4 μm is mixed with a specific metal powder, If necessary, an inorganic filler powder and an organic component such as an organic binder and a solvent are added and mixed to prepare a paste.
【００３３】ここで、特定金属粉末の添加量は、１００
０℃以下、特に６５０℃以下の温度での焼成によっても
突起部材の焼成による収縮を抑制する点で、ガラス粉末
１００重量部に対して、総量で１０〜７０重量部、特に
２０〜６０重量部であることが望ましく、金属粉末の酸
化を促進し、金属粉末の平均粒径は粉末の凝集を防止
し、ペースト調整時の粉体爆発を防止する点で、０．５
〜６μｍ、特に０．８〜３μｍ、さらに１〜２μｍであ
ることが望ましい。Here, the addition amount of the specific metal powder is 100
In view of suppressing the shrinkage of the protruding member due to firing even at a temperature of 0 ° C. or less, particularly at a temperature of 650 ° C. or less, the total amount is 10 to 70 parts by weight, particularly 20 to 60 parts by weight with respect to 100 parts by weight of the glass powder. It is desirable to promote the oxidation of the metal powder, the average particle size of the metal powder is 0.5 in terms of preventing powder agglomeration and preventing powder explosion during paste adjustment.
It is preferably from 6 to 6 μm, particularly preferably from 0.8 to 3 μm, and more preferably from 1 to 2 μm.
【００３４】また、ガラス粉末としては、ＰｂＯ系ガラ
ス、Ｂｉ2Ｏ3系ガラス、ＳｉＯ2−Ｂ2Ｏ3系ガラス、ソ
ーダガラス、シリカ系ガラス等が適応可能であるが、特
に金属粉末との濡れ性、基板と突起部材（スペーサ）と
の接合性の点で、ＰｂＯ、Ｂｉ2Ｏ3およびＢ2Ｏ3から選
ばれる少なくとも１種を含むこと、より具体的にはＰｂ
Ｏ−ＳｉＯ2−Ｂ2Ｏ3系ガラスやＢｉ2Ｏ3−Ｂ2Ｏ3系ガ
ラス、Ｂ2Ｏ3−ＰｂＯ−ＺｎＯ系ガラスからなることが
望ましい。As the glass powder, PbO-based glass, Bi 2 O 3 -based glass, SiO 2 -B 2 O 3 -based glass, soda glass, silica-based glass and the like can be applied. From the viewpoints of wettability and bondability between the substrate and the projection member (spacer), it contains at least one selected from PbO, Bi 2 O 3 and B 2 O 3 , more specifically, PbO.
O-SiO 2 -B 2 O 3 based glass or Bi 2 O 3 -B 2 O 3 based glass, it is preferably made of B 2 O 3 -PbO-ZnO-based glass.
【００３５】さらに、無機フィラーとしては、磁器強度
向上、着色、誘電率、抵抗率制御、二次電子放出比を低
減するために、Ａｌ2Ｏ3、ＳｉＯ2、ＺｒＯ2、Ｔｉ
Ｏ2、ＺｎＯ、ＳｎＯ2、ＣｕＯ、Ｃｒ2Ｏ3、Ｙ2Ｏ3、Ｎ
ｂ2Ｏ3、Ｓｉ3Ｎ4、ＡｌＮ等のセラミックスまたは軟化
点が７００℃以上の高軟化点ガラスが挙げられ、特に特
定金属の酸化温度を低下させるとともに二次電子放出比
を低めて突起部材が帯電することを防止する点で、Ｔｉ
Ｏ2を前記ガラス粉末１００重量部に対して１〜３５重
量部の割合で添加することが望ましく、その他のフィラ
ー成分は突起部材の緻密化、強度の点で０〜２５重量部
となることが望ましい。Further, as the inorganic filler, Al 2 O 3 , SiO 2 , ZrO 2 , Ti, and the like are used to improve porcelain strength, control coloring, permittivity, resistivity, and reduce the secondary electron emission ratio.
O 2 , ZnO, SnO 2 , CuO, Cr 2 O 3 , Y 2 O 3 , N
Ceramics such as b 2 O 3 , Si 3 N 4 , and AlN, and high softening point glass having a softening point of 700 ° C. or more are used. In particular, the oxidation temperature of a specific metal is lowered, and the secondary electron emission ratio is lowered. From the viewpoint of preventing the
It is desirable to added in an amount of 1 to 35 parts by weight relative to O 2 of the glass powder 100 parts by weight, densification of the other filler component projecting member, be a 0-25 parts by weight in terms of intensity desirable.
【００３６】また、有機成分としては、アクリル樹脂、
エポキシ樹脂、セルロース系樹脂、ブチラール樹脂、フ
ェノール樹脂等の有機バインダと、溶剤に加えて、所望
により、可塑剤、分散剤を添加することができる。The organic components include acrylic resin,
In addition to an organic binder such as an epoxy resin, a cellulosic resin, a butyral resin, and a phenol resin, and a solvent, a plasticizer and a dispersant can be added as desired.
【００３７】そして、上記ペーストを用いて基板表面に
垂直に複数本の突起部材用成形体を形成する。突起部材
の具体的な形状は、例えば、厚み１０〜２００μｍ、特
に５０〜２００μｍ、高さ５００〜４０００μｍ、突起
部材のピッチ２００μｍ以上とすることができる。Then, a plurality of moldings for projecting members are formed perpendicularly to the substrate surface using the paste. The specific shape of the projection member can be, for example, a thickness of 10 to 200 μm, particularly 50 to 200 μm, a height of 500 to 4000 μm, and a pitch of the projection member of 200 μm or more.
【００３８】スペーサ用成形体の具体的な形成方法とし
ては、（ａ）前記ペーストを複数回印刷塗布してスペー
サ用成形体を得る方法、（ｂ）ゴム、金属、セラミック
ス等からなる成形型内に前記ペーストを充填し、前記成
形型を基板に当接した後、該成形型を抜き取る方法、
（ｃ）基板表面に前記ペーストを用いて所望の厚みのシ
ートを形成し、該シートの表面にスペーサ形状の溝が形
成された剛性の高い平板状の成形型を配置して押圧した
後、該成形型を抜き取る方法、（ｄ）前記シート表面に
スペーサ形状の溝が形成された剛性が高いロール状の成
形型を配置し、押圧しながら回転移動させ、スペーサ用
成形体を形成する方法、（ｅ）前記基板表面に樹脂層を
形成し、これをスペーサ形状の突起が形成された成形型
にて押圧後、型を抜き取ることで樹脂層に溝を形成し、
該溝にスラリーを充填、硬化し、さらに樹脂層を除去す
る方法、（ｆ）サンドブラスト法、（ｇ）ペーストの前
記シートを作製した後マスクを用いてフォトリソグラフ
ィ法を用いて突起部材パターンに加工する方法等が使用
可能である。上記（ａ）〜（ｇ）の中でも、特に高さが
８００μｍ以上の高いスペーサを容易に形成できる点で
方法（ｂ）または（ｅ）が好適である。As a concrete method of forming a molded body for a spacer, (a) a method of printing and applying the paste a plurality of times to obtain a molded body for a spacer, and (b) a molding die made of rubber, metal, ceramics or the like. Filling the paste, after contacting the mold with the substrate, a method of extracting the mold,
(C) A sheet having a desired thickness is formed on the surface of the substrate by using the paste, and a highly rigid plate-shaped mold having spacer-shaped grooves formed on the surface of the sheet is pressed and pressed. A method of extracting a forming die, (d) a method of arranging a roll-shaped forming die having high rigidity in which a spacer-shaped groove is formed on the sheet surface and rotating while pressing, to form a formed body for spacer ( e) forming a resin layer on the surface of the substrate, pressing the resin layer with a mold having spacer-shaped projections formed thereon, and removing the mold to form a groove in the resin layer;
The groove is filled with slurry, cured, and the resin layer is further removed. (F) Sandblasting, (g) After preparing the sheet of the paste, processing is performed using a mask to form a protruding member pattern using a photolithography method. And the like. Among the above (a) to (g), the method (b) or (e) is preferable because a high spacer having a height of 800 μm or more can be easily formed.
【００３９】次に、上記工程によって得られた基板を脱
脂後、酸化性雰囲気中、焼成して、前記成形体中の前記
金属粉末の一部を酸化させるとともに、基板を突起部材
と接合一体化させる。ここで、本発明によれば、突起部
材の壁面部における特定の金属の含有量を突起部材の内
部の金属の含有量よりも少なくするために、上記焼成温
度を５００〜１０００℃、特に５１０〜６５０℃とする
ことが重要であり、また、焼成時間は２０〜１２０分で
あること、大気よりも酸素過剰雰囲気中にて焼成するこ
とが望ましい。Next, the substrate obtained by the above process is degreased and fired in an oxidizing atmosphere to oxidize a part of the metal powder in the compact and to join the substrate to the projection member. Let it. Here, according to the present invention, in order to make the specific metal content in the wall portion of the projection member smaller than the content of the metal inside the projection member, the firing temperature is set to 500 to 1000 ° C., particularly to 510 to 500 ° C. It is important that the temperature is 650 ° C., and the firing time is 20 to 120 minutes, and it is preferable that the firing be performed in an oxygen excess atmosphere rather than the atmosphere.
【００４０】なお、突起部材の焼成温度は基板が変形す
る温度より低くする必要があり、基板の材質によって上
限温度が変わりうる。また、予め、表面に電子放出素子
や蛍光体層、電極を形成した基板を焼成する場合には、
それら各素子の耐熱温度より低い温度で焼成する必要が
ある。Note that the firing temperature of the projection member needs to be lower than the temperature at which the substrate is deformed, and the upper limit temperature may vary depending on the material of the substrate. Also, in the case where the substrate on which the electron-emitting device, the phosphor layer, and the electrode are formed in advance is fired,
It is necessary to fire at a temperature lower than the heat resistant temperature of each of these elements.
【００４１】本発明によれば、上記焼成によっても突起
部材が収縮することなく、突起部材の焼成収縮に伴う反
りやクラックの発生が抑えられ、基板と突起部材とを一
体化することができるとともに、突起部材の壁面部にお
ける特定金属の含有量を突起部材の内部における特定金
属よりもより酸化することができることから突起部材壁
面部にて酸化されずに残存する金属粒子の脱粒を防止し
て安定な壁面部を有する突起部材を作製することができ
る。According to the present invention, the projecting member does not shrink even by the above-mentioned firing, the occurrence of warpage and cracks accompanying the firing shrinkage of the projecting member is suppressed, and the substrate and the projecting member can be integrated. Since the specific metal content in the wall of the projection member can be more oxidized than the specific metal in the interior of the projection member, the metal particles remaining without being oxidized on the wall surface of the projection member can be prevented from falling and stable. It is possible to produce a projection member having an appropriate wall surface.
【００４２】次に、本発明の画像形成装置の製造方法の
一例について説明する。まず、上述した材料からなる正
面板３を作製し、所定形状にカットした後、格子状のブ
ラックマトリックス１０をフォトリソグラフィ法、印刷
法等により形成し、該ブラックマトリックス１０によっ
て囲まれた領域の所定の位置に、フォトリソグラフィ
法、印刷法、インクジェット法等の公知の方法により蛍
光体層７を形成する。なお、スペーサ９の正面板３への
接合強度向上の点で、蛍光体層７は正面板３のスペーサ
９形成部にはマスク等を用いて形成しないことが望まし
い。Next, an example of a method for manufacturing the image forming apparatus of the present invention will be described. First, the front plate 3 made of the above-described material is manufactured and cut into a predetermined shape. Then, a lattice-shaped black matrix 10 is formed by a photolithography method, a printing method, or the like, and a predetermined region of the region surrounded by the black matrix 10 is formed. The phosphor layer 7 is formed at a position by a known method such as a photolithography method, a printing method, and an inkjet method. From the viewpoint of improving the bonding strength of the spacer 9 to the front plate 3, it is desirable that the phosphor layer 7 is not formed using a mask or the like at the portion where the spacer 9 is formed on the front plate 3.
【００４３】また、蛍光体層７に蓄積される電荷を逃が
すため、正面板３と蛍光体層７との間にペースト塗布
法、蒸着法等によりＩＴＯ膜１１を形成するか、または
アルミニウム（Ａｌ）、銀（Ａｇ）、ニッケル（Ｎ
ｉ）、白金（Ｐｔ）、等からなり５０〜２００ｎｍ程度
の厚みを有する箔からなるメタルバック（図示せず。）
を蛍光体層７表面に蒸着法などによって形成することが
望ましく、さらに、蛍光体層７の損傷を防ぐため、また
前記メタルバックを薄くかつ均一な厚みに形成するため
に樹脂からなる保護層（図示せず）を蛍光体層７表面に
形成することが望ましい。Further, in order to release the electric charge accumulated in the phosphor layer 7, an ITO film 11 is formed between the front plate 3 and the phosphor layer 7 by a paste coating method, a vapor deposition method, or the like. ), Silver (Ag), nickel (N
i), a metal back (not shown) made of a foil made of platinum (Pt) or the like and having a thickness of about 50 to 200 nm.
Is preferably formed on the surface of the phosphor layer 7 by a vapor deposition method or the like. Further, in order to prevent damage to the phosphor layer 7 and to form the metal back into a thin and uniform thickness, a protective layer ( (Not shown) is desirably formed on the surface of the phosphor layer 7.
【００４４】なお、この保護層は後述のバインダ、溶剤
の他、消泡材やレベリング材等を添加した樹脂ペースト
をフォトリソグラフィー法、印刷法、インクジェット法
等にて形成でき、後述の熱処理により消失することが望
ましい。This protective layer can be formed by a photolithography method, a printing method, an ink jet method, or the like by adding a resin paste to which a defoaming material or a leveling material is added in addition to a binder and a solvent described later, and disappears by a heat treatment described later. It is desirable to do.
【００４５】他方、上述した材料からなる背面板２表面
に、フォトリソグラフィ法等により上述した材料からな
る導体層を正電極用導体層と負電極用導体層とが所定の
位置で交差するように被着形成し、かつその交差点には
スパッタリング法、蒸着法、イオンビームスパッタリン
グ法、ＣＶＤ法、ＭＢＥ法等により上述した材料からな
る絶縁体が介装されることによって電子放出素子６を形
成する。On the other hand, a conductor layer made of the above-mentioned material is formed on the surface of the back plate 2 made of the above-mentioned material by a photolithography method or the like so that the conductor layer for the positive electrode and the conductor layer for the negative electrode intersect at a predetermined position. The electron-emitting device 6 is formed by depositing and interposing an insulator made of the above-described material by a sputtering method, a vapor deposition method, an ion beam sputtering method, a CVD method, an MBE method, or the like at an intersection thereof.
【００４６】そして、正面板３または背面板２の表面に
スペーサ９を上述した方法によって形成する。なお、焼
成温度が５５０℃を越える場合には、スペーサ９を形成
した後、蛍光体層７を被着形成することが望ましい。Then, spacers 9 are formed on the surface of the front plate 3 or the back plate 2 by the above-described method. If the firing temperature exceeds 550 ° C., it is preferable to form the phosphor layer 7 after forming the spacer 9.
【００４７】その後、背面板２と正面板３との間に枠体
４を配置するとともに、フリットガラス等の接着剤を印
刷法により背面板２のスペーサ９および枠体４を固着す
る部分、および／またはスペーサ９および枠体４の先端
面に塗布し、上述した正面板３表面に形成されたスペー
サ９の先端面を背面板２の所定の位置に位置合わせして
４００〜５００℃で熱処理することによって枠体４およ
びスペーサ１０を貼り合わせた後、パネルの一端に真空
ポンプを配設してパネル５内を１０-4Ｐａ程度まで真空
減圧して封止することにより、本発明の画像形成装置を
作製することができる。After that, the frame 4 is disposed between the rear plate 2 and the front plate 3, and an adhesive such as frit glass is fixed to the spacer 9 of the rear plate 2 and the frame 4 by printing. And / or apply to the end faces of the spacer 9 and the frame 4, position the end face of the spacer 9 formed on the surface of the front plate 3 at a predetermined position on the back plate 2, and heat-treat at 400 to 500 ° C. After the frame 4 and the spacer 10 are bonded to each other, a vacuum pump is provided at one end of the panel, and the inside of the panel 5 is vacuum-depressurized to about 10 −4 Pa and sealed, thereby forming the image of the present invention. A device can be made.
【００４８】なお、画像形成装置の製造方法において
は、正面板側にスペーサを形成したが、本発明はこれに
限定されるものでなく、背面板側にスペーサを形成して
もよい。In the method of manufacturing the image forming apparatus, the spacer is formed on the front plate side. However, the present invention is not limited to this, and the spacer may be formed on the rear plate side.
【００４９】[0049]
【実施例】（実施例１）平均粒径０．８μｍのＢｉ2Ｏ3
−Ｂ2Ｏ3系ガラスに対して、表１に示す金属および無機
フィラーを添加し、これに無機粉末１００重量部に対し
て、アクリル樹脂からなる有機バインダ、重合開始剤、
溶剤、分散剤の有機物成分を４２重量部となるように添
加、混練して、突起部材用ペーストを作製し、シリコー
ンゴム型に前記ペーストを充填して十分に脱泡した後、
ソーダライムガラス製の基板表面に当接して、真空封止
し、１１０℃で３０分間熱処理を行い、シリコーンゴム
型を抜き取ることによりスペーサ用成形体を形成した。EXAMPLES Example 1 Bi 2 O 3 having an average particle size of 0.8 μm
Against -B 2 O 3 based glass, by adding a metal and an inorganic filler shown in Table 1, with respect to 100 parts by weight of the inorganic powder to the organic binder consisting of an acrylic resin, a polymerization initiator,
A solvent and an organic component of a dispersant were added and kneaded so as to be 42 parts by weight to prepare a projection member paste, and the silicone rubber mold was filled with the paste and sufficiently defoamed.
A spacer molding was formed by contacting the surface of a soda-lime glass substrate, vacuum-sealing, performing heat treatment at 110 ° C. for 30 minutes, and extracting a silicone rubber mold.
【００５０】得られた成形体は、レーザー変位計（キー
エンス社製ＬＣ−２４４０／２４００）を用いて成形体
スペーサの厚みと高さの測定を行い、測定精度内でシリ
コーンゴム型と同サイズであることを確認した。The thickness and height of the obtained molded product were measured using a laser displacement meter (LC-2440 / 2400, manufactured by KEYENCE CORPORATION). Confirmed that there is.
【００５１】なお、前記シリコーンゴム型は、凹部の深
さ（スペーサの高さ）が１２００μｍ、凹部幅（スペー
サの厚み）が２００μｍ、凹部（スペーサ）の長さが８
ｃｍ、凹部間の距離（スペーサ間距離）が８００μｍの
ものを使用した。The silicone rubber mold has a recess depth (spacer height) of 1200 μm, a recess width (spacer thickness) of 200 μm, and a recess (spacer) length of 8 μm.
cm and a distance between the concave portions (distance between spacers) of 800 μm were used.
【００５２】さらに、該成形体を０．３ｍ3の焼成空間
を有する焼成炉中に載置して、酸素ガス気流（流速２リ
ットル／分）中、５２０℃、２０分間焼成し、上記と同
様にレーザー変位計にてスペーサの高さを測定し、スペ
ーサ用成形体の高さに対するスペーサの高さに対する比
率（（スペーサの高さ／スペーサ用成形体の高さ）×１
００（％））を寸法変化率である収縮率として算出し
た。Further, the compact was placed in a firing furnace having a firing space of 0.3 m 3 , and fired at 520 ° C. for 20 minutes in an oxygen gas stream (flow rate: 2 liters / minute). The height of the spacer was measured using a laser displacement meter, and the ratio of the height of the spacer to the height of the spacer molded body ((spacer height / spacer molded body height) × 1)
00 (%)) was calculated as the shrinkage ratio, which is the dimensional change ratio.
【００５３】また、スペーサの外観を実体顕微鏡にて観
察し、剥がれや反り、曲がり、切れの有無を判定し、さ
らにスペーサの壁面部について金属粒子の脱粒の有無を
確認して無いものは良好として表１に示した。また、ス
ペーサの壁面部および壁面から３０μｍ以上研磨した研
磨面をスペーサの内部とみなしてそれぞれ任意５点につ
いてＸ線回折測定を行い、壁面および研磨面それぞれに
ついてリートベルト法により金属およびその酸化物の含
有量（ｍM1、ｍO1、ｍM2、ｍO2）を求め、これらの比
（ｍM1／ｍO1およびｍM2／ｍO2）を算出し、壁面部と内
部との強度比を比較した。壁面部の強度比（ｍM1／
ｍO1）が内部の強度比（ｍM2／ｍO2）よりも小さいもの
を＜として、同じであるものを＝として表１に金属の分
布状態として示した。なお、試料Ｎｏ．２、３、６にお
けるＸ線回折チャート中にはＳｉＯ2のピークが確認さ
れなかった（図２に示す試料Ｎｏ．６についてのＸ線回
折チャート参照）ため、Ｘ線回折測定面の非晶質（ガラ
ス）相についてＥＤＳ（エネルギー分散型Ｘ線分光分析
法）を行い、ＳｉＯ2の含有比率を求め、かつリートベ
ルト法により定量した非晶質（ガラス）相中のＳｉＯ2
の含有量を特定金属の酸化物の含有量（ｍO）として算
出した。Further, the appearance of the spacer was observed with a stereoscopic microscope, and the presence or absence of peeling, warping, bending, or cutting was judged. The results are shown in Table 1. Also, X-ray diffraction measurement was performed at arbitrary five points on each of the wall surface portion and the polished surface polished from the wall surface by 30 μm or more as the interior of the spacer. The contents (m M1 , m O1 , m M2 , m O2 ) were determined, their ratios (m M1 / m O1 and m M2 / m O2 ) were calculated, and the strength ratio between the wall portion and the inside was compared. Strength ratio of wall (m M1 /
Table 1 shows the distribution of metals in Table 1 as <, where m O1 ) is smaller than the internal intensity ratio (m M2 / m O2 ), and when the same is the same. The sample No. Since no SiO 2 peak was observed in the X-ray diffraction charts of Samples 2, 3, and 6 (see the X-ray diffraction chart of Sample No. 6 shown in FIG. 2), the amorphous surface of the X-ray diffraction measurement surface (glass) phase for perform EDS (energy dispersive X-ray spectroscopy), determine the content of SiO 2, and SiO 2 of amorphous (glass) phase was quantified by Rietveld method
Was calculated as the content (m O ) of the oxide of the specific metal.
【００５４】さらに、スペーサの一部について絶縁計に
て体積固有抵抗値（表では抵抗と記載）を測定した。結
果は表１に示した。Further, a part of the spacer was measured for its volume resistivity (described as resistance in the table) by an insulation meter. The results are shown in Table 1.
【００５５】[0055]
【表１】 [Table 1]
【００５６】表１から、所定の金属を添加しない試料Ｎ
ｏ．１では、焼成による収縮率が大きく絶縁基板から剥
離してしまった。また、４６０℃で１５分焼成し、突起
部材の壁面部の金属含有量が内部の金属含有量と同じ試
料Ｎｏ．２では、突起部材の壁面にて金属粒子の脱粒が
みられた。From Table 1, it is found that the sample N to which the predetermined metal was not added was used.
o. In No. 1, the shrinkage due to baking was large, and peeled from the insulating substrate. Further, the sample was baked at 460 ° C. for 15 minutes, and the metal content of the wall surface portion of the projection member was the same as that of the sample No. 2 in the inner metal content. In No. 2, the metal particles were shed on the wall surface of the projection member.
【００５７】これに対して、本発明に従い、特定の金属
を分散し、かつ壁面部の金属の含有量が内部の金属の含
有量よりも少ない試料Ｎｏ．３〜８では、スペーサの焼
成収縮率が小さく、絶縁基板から剥離することなく、か
つ壁面部から金属粒子が脱粒することなく形成すること
ができた。On the other hand, according to the present invention, the sample No. in which a specific metal is dispersed and the metal content of the wall portion is smaller than the internal metal content. In Nos. 3 to 8, the spacer shrinkage rate was small, and the spacer could be formed without peeling off from the insulating substrate and without removing metal particles from the wall surface.
【００５８】（実施例２）まず、寸法７０ｍｍ×７０ｍ
ｍ×２ｍｍの高歪点の低ソーダガラス基板の一方の表面
に蒸着法によりＩＴＯ膜を形成し、さらに低融点ガラス
粉末とＭｎＯ2粉末を混合したペーストを用いて、スク
リーン印刷法によりブラックマトリックスを被着形成
し、５５０℃の焼成により基板と一体化させた。(Embodiment 2) First, dimensions 70 mm × 70 m
An ITO film is formed on one surface of a low soda glass substrate having a high strain point of mx 2 mm by an evaporation method, and a black matrix is formed by a screen printing method using a paste obtained by mixing a low melting glass powder and a MnO 2 powder. It was deposited and integrated with the substrate by firing at 550 ° C.
【００５９】一方、平均粒径０．５μｍのＰｂＯ−Ｓｉ
Ｏ2−Ｂ2Ｏ3ガラス粉末に対して、表１の試料Ｎｏ．６
に示す割合で金属と無機フィラーを添加し、これにアク
リルバインダ、溶剤、分散剤を添加、混練してペースト
を作製した。On the other hand, PbO—Si having an average particle size of 0.5 μm
Sample No. 1 in Table 1 was used for O 2 -B 2 O 3 glass powder. 6
A metal and an inorganic filler were added at the ratios shown in Table 2, and an acrylic binder, a solvent, and a dispersant were added thereto and kneaded to prepare a paste.
【００６０】他方、スペーサ（突起部材）を形成するた
めの溝部を有するウレタンゴムからなる成形型を準備
し、該溝部内に上記のスペーサ形成用のペーストを充填
して乾燥した後、上記ＩＴＯ膜とブラックマトリックス
とを形成した正面板の所定位置に転写し、正面板表面に
スペーサ成形体を作製した。このスペーサ成形体を形成
した基板を、酸素フロー雰囲気（２リットル／分）中に
て、５２０℃で２０分間焼成することによって正面板と
一体化した幅（厚み）１５０μｍ、長さ５０ｍｍ、高さ
１０００μｍのスペーサをピッチ１０．９８ｍｍで４本
形成し、スペーサ付基板を得た。On the other hand, a mold made of urethane rubber having a groove for forming a spacer (protruding member) is prepared, and the groove is filled with the paste for forming a spacer and dried. And a black matrix were transferred to a predetermined position of the front plate on which the spacer matrix was formed. The substrate on which this spacer molded body was formed was baked at 520 ° C. for 20 minutes in an oxygen flow atmosphere (2 liters / minute) to integrate the front plate with a width (thickness) of 150 μm, a length of 50 mm, and a height. Four 1000 μm spacers were formed at a pitch of 10.98 mm to obtain a substrate with spacers.
【００６１】また、インクジェット法によって正面板の
突起部材形成面の所定位置に蛍光体層形成用ペーストを
被着形成し、大気中、４５０℃で２０分間加熱してペー
スト中の有機物成分を除去した。Further, a phosphor layer forming paste was applied to a predetermined position of the projection member forming surface of the front plate by an ink-jet method, and heated at 450 ° C. for 20 minutes in the air to remove organic components in the paste. .
【００６２】一方、正面板側と同じ寸法の高歪点低ソー
ダガラス基板の一方の表面にスクリーン印刷法により電
極を、蒸着法により電子放出素子を形成し、背面板を作
製した。さらに上記正面板のスペーサの頂部を研磨し、
高さを揃えると共に、先端の高い割合で酸化している部
分を除去した。次に該スペーサ頂部および別体で用意し
た枠体の両面に低融点ガラスと銀粉末、ビークルを混合
した導電性フリットガラスペーストを塗布して背面板の
所定位置に枠体、正面板を載置、接着し、４３０℃にて
フリットガラスを溶かして封着後、容器内が１０-3Ｐａ
以下となるように真空排気した状態で封止、固定してＦ
ＥＤパネルを作製した。On the other hand, electrodes were formed on one surface of a high strain point, low soda glass substrate having the same dimensions as the front plate by screen printing, and electron-emitting devices were formed by vapor deposition, thereby producing a back plate. Furthermore, the top of the spacer of the front plate is polished,
The height was made uniform, and a portion of the tip that was oxidized at a high rate was removed. Next, a conductive frit glass paste in which low melting glass, silver powder, and a vehicle are mixed is applied to both the top of the spacer and the frame prepared separately, and the frame and the front plate are placed at predetermined positions on the back plate. After frit glass is melted and sealed at 430 ° C., the inside of the container is 10 −3 Pa.
Seal and fix in the state of evacuated to
An ED panel was manufactured.
【００６３】得られたＦＥＤパネルについて、電子放出
素子に電圧を印加してパネルの全面を発光させ、発光ム
ラの有無を確認した結果、発光ムラがなく良好な発光が
可能であることを確認した。With respect to the obtained FED panel, a voltage was applied to the electron-emitting devices to emit light over the entire surface of the panel, and the presence or absence of light emission unevenness was confirmed. As a result, it was confirmed that good light emission was possible without light emission unevenness. .
【００６４】[0064]
【発明の効果】以上、詳述したとおり、本発明の突起部
材付基板によれば、ガラス粉末とＳｉ、Ｚｎ、Ａｌ、Ｓ
ｎ、ＣｕおよびＭｇの群から選ばれる少なくとも１種の
金属粉末を添加したペーストを用いて基板表面に突起部
材用成形体を作製した後、これを酸化雰囲気中にて、突
起部材壁面部の金属の含有量が内部の金属の含有量より
も少なくなるように前記金属粉末を酸化しつつ焼成する
ことによって、基板表面に高精度な突起部材を形成で
き、かつ安定な壁面状態の突起部材とできる。As described above in detail, according to the substrate with a projection member of the present invention, glass powder, Si, Zn, Al, S
A molded body for a projection member is formed on a substrate surface using a paste to which at least one type of metal powder selected from the group consisting of n, Cu, and Mg is added. By baking while oxidizing the metal powder so that the content of the metal powder is smaller than the content of the internal metal, a highly accurate projection member can be formed on the substrate surface, and the projection member can be a stable wall surface state. .
【００６５】また、突起部材に所定の導電性を付与でき
ることから、突起部材（スペーサ）の帯電を防止でき、
さらに、突起部材の壁面部に特定金属の酸化物のうち、
ＳｎＯ2、ＣｕＯを存在せしめることによって、二次電
子放出比を低めて突起部材の帯電をさらに抑制でき、画
面の表示（発光）ムラも抑制することができる。Further, since the predetermined conductivity can be imparted to the projection member, the charging of the projection member (spacer) can be prevented.
Furthermore, among the oxides of the specific metal,
By allowing SnO 2 and CuO to be present, the secondary electron emission ratio can be reduced to further suppress charging of the projection member, and also suppress display (light emission) unevenness on the screen.
【００６６】また、突起部材（スペーサ）の壁面部にＳ
ｉＯ2、ＺｎＯ、Ａｌ2Ｏ3、ＳｎＯ2、ＭｇＯを存在せし
めることによって、突起部材（スペーサ）の壁面部を白
色化でき、同じ消費電力で表示パネルの輝度を高めるこ
とができる。Further, S on the wall surface of the projection member (spacer).
The presence of iO 2 , ZnO, Al 2 O 3 , SnO 2 , and MgO makes it possible to whiten the wall surface of the projecting member (spacer), thereby increasing the brightness of the display panel with the same power consumption.
【図１】本発明の突起部材付基板の好適な応用例である
画像形成装置の一例を示す概略断面図である。FIG. 1 is a schematic sectional view showing an example of an image forming apparatus which is a preferred application example of a substrate with a projection member of the present invention.
【図２】本発明の突起部材付基板の突起部材の壁面部と
内部についてのＸ線回折ピークの例である。FIG. 2 is an example of X-ray diffraction peaks on the wall surface and inside of the projection member of the substrate with a projection member of the present invention.
１・・・画像形成装置（ＦＥＤ） ２・・・背面板 ３・・・正面板 ４・・・枠体 ５・・・パネル（真空部） ６・・・電子放出素子 ７・・・蛍光体層 ８・・・単位画素 ９・・・スペーサ（突起部材） １０・・ブラックマトリックス １１・・ＩＴＯ膜 １２・・拡散防止層 DESCRIPTION OF SYMBOLS 1 ... Image forming apparatus (FED) 2 ... Back plate 3 ... Front plate 4 ... Frame 5 ... Panel (vacuum part) 6 ... Electron emission element 7 ... Phosphor Layer 8: Unit pixel 9: Spacer (projection member) 10. Black matrix 11. ITO film 12. Diffusion prevention layer
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5C012 AA05 BB07 5C032 CC10 5C036 EE14 EF01 EF06 EF09 EG01 EH11 EH18 EH22 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5C012 AA05 BB07 5C032 CC10 5C036 EE14 EF01 EF06 EF09 EG01 EH11 EH18 EH22
Claims (7)
突起部材を前記基板に対して垂直に形成してなる突起部
材付基板であって、前記突起部材が、ガラスマトリック
ス中にＳｉ、Ｚｎ、Ａｌ、Ｓｎ、ＣｕおよびＭｇの群か
ら選ばれる少なくとも１種の金属および該金属の酸化物
が分散してなるとともに、前記突起部材の壁面部におけ
る前記金属の含有量（ｍM1）と該金属の酸化物の含有量
（ｍo1）との比（ｍM1／ｍO1）が該突起部材の内部にお
ける金属の含有量（ｍM2）と該金属の酸化物の含有量
（ｍo2）との比（ｍM2／ｍO2）よりも小さいことを特徴
とする突起部材付基板。1. A substrate provided with a projection member having a plurality of projection members having a predetermined height formed on a surface of the substrate perpendicularly to the substrate, wherein the projection member includes Si in a glass matrix. And at least one metal selected from the group consisting of Zn, Al, Sn, Cu and Mg and an oxide of the metal are dispersed, and the content (m M1 ) of the metal on the wall surface of the projection member the content of the oxide of the metal (m o1) and the content of the metal ratio (m M1 / m O1) is in the interior of the protrusion members (m M2) and the content of the oxide of the metal (m o2) Characterized in that it is smaller than the ratio ( mm2 / m02 ).
を特徴とする請求項１記載の突起部材付基板。2. The substrate with a projection member according to claim 1, wherein the projection member contains TiO 2 .
さ３００μｍ以上であることを特徴とする請求項１また
は２記載の突起部材付基板。3. The substrate with a projection member according to claim 1, wherein the thickness of the projection member is 200 μm or less and the height is 300 μm or more.
Ａｌ、Ｓｎ、ＣｕおよびＭｇの群から選ばれる少なくと
も１種の金属粉末との混合物を含有するペーストを用い
て所定の高さを有する複数本の突起部材用成形体を前記
基板に対して垂直となるように形成した後、酸化雰囲気
中にて、突起部材の壁面部における前記金属の含有量
（ｍM1）と該金属の酸化物の含有量（ｍo1）との比（ｍ
M1／ｍO1）が該突起部材の内部の金属の含有量（ｍM2）
と該金属の酸化物の含有量（ｍo2）との比（ｍM2／
ｍO2）よりも小さくなるように前記金属粉末を酸化しつ
つ焼成することを特徴とする突起部材付基板の製造方
法。4. A glass powder, Si, Zn,
Using a paste containing a mixture with at least one type of metal powder selected from the group consisting of Al, Sn, Cu, and Mg, a plurality of molded members for a projection member having a predetermined height are vertically aligned with the substrate. Then, in an oxidizing atmosphere, the ratio (m 1) between the content of the metal (m M1 ) and the content of the oxide of the metal (m o1 ) on the wall surface of the projection member is determined.
M1 / m O1 ) is the metal content (m M2 ) inside the projection member.
And the ratio of the oxide of the metal (m o2 ) (m M2 /
and baking while oxidizing the metal powder so as to be smaller than m O2 ).
し、前記金属を１０〜７０重量部の割合で添加すること
を特徴とする請求項４記載の突起部材付基板の製造方
法。5. The method according to claim 4, wherein the metal is added in a ratio of 10 to 70 parts by weight based on 100 parts by weight of the raw material powder of the glass.
ることを特徴とする請求項４または５記載の突起部材付
基板の製造方法。6. The method according to claim 4, wherein the metal has an average particle size of 0.1 to 4 μm.
基板の該突起部材先端面に他の基板を接合し、２枚の基
板が前記突起部材によって所定の間隔で離間して平行に
配設されてなり、一方の前記基板内面に形成した電極に
信号電圧を印加することによって画像を形成することを
特徴とする画像形成装置。7. A substrate with a projection member according to any one of claims 1 to 3, wherein another substrate is joined to the tip end surface of the projection member, and the two substrates are separated by a predetermined distance by the projection member and are parallel. An image forming apparatus which is provided and forms an image by applying a signal voltage to an electrode formed on one of the inner surfaces of the substrate.
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|---|---|---|---|
| JP2001043484A JP3999942B2 (en) | 2001-02-20 | 2001-02-20 | SUBSTRATE WITH PROJECT MEMBER, ITS MANUFACTURING METHOD, AND IMAGE FORMING APPARATUS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001043484A JP3999942B2 (en) | 2001-02-20 | 2001-02-20 | SUBSTRATE WITH PROJECT MEMBER, ITS MANUFACTURING METHOD, AND IMAGE FORMING APPARATUS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002245956A true JP2002245956A (en) | 2002-08-30 |
| JP3999942B2 JP3999942B2 (en) | 2007-10-31 |
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004030010A1 (en) * | 2002-09-27 | 2004-04-08 | Kabushiki Kaisha Toshiba | Image-displaying device, method of producing spacer used for image-displaying device, and image-displaying device with the spacer produced by the method |
| EP1619713A1 (en) * | 2003-04-08 | 2006-01-25 | Kabushiki Kaisha Toshiba | Image disply unit and production method for spacer assembly used in image display unit |
| JP2006054143A (en) * | 2004-08-16 | 2006-02-23 | Hitachi Displays Ltd | Image display device and its manufacturing method |
| US7192327B2 (en) | 2002-09-27 | 2007-03-20 | Kabushiki Kaisha Toshiba | Image display device, method of manufacturing a spacer for use in the image display device, and image display device having spacers manufactured by the method |
| JP2008192465A (en) * | 2007-02-05 | 2008-08-21 | Kochi Prefecture Sangyo Shinko Center | Field emission type electrode and electronic equipment |
-
2001
- 2001-02-20 JP JP2001043484A patent/JP3999942B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004030010A1 (en) * | 2002-09-27 | 2004-04-08 | Kabushiki Kaisha Toshiba | Image-displaying device, method of producing spacer used for image-displaying device, and image-displaying device with the spacer produced by the method |
| US7192327B2 (en) | 2002-09-27 | 2007-03-20 | Kabushiki Kaisha Toshiba | Image display device, method of manufacturing a spacer for use in the image display device, and image display device having spacers manufactured by the method |
| EP1619713A1 (en) * | 2003-04-08 | 2006-01-25 | Kabushiki Kaisha Toshiba | Image disply unit and production method for spacer assembly used in image display unit |
| EP1619713A4 (en) * | 2003-04-08 | 2008-02-27 | Toshiba Kk | Image disply unit and production method for spacer assembly used in image display unit |
| JP2006054143A (en) * | 2004-08-16 | 2006-02-23 | Hitachi Displays Ltd | Image display device and its manufacturing method |
| JP2008192465A (en) * | 2007-02-05 | 2008-08-21 | Kochi Prefecture Sangyo Shinko Center | Field emission type electrode and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3999942B2 (en) | 2007-10-31 |
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