JP2002231794A - Mechanism of placing workpiece - Google Patents
Mechanism of placing workpieceInfo
- Publication number
- JP2002231794A JP2002231794A JP2001027237A JP2001027237A JP2002231794A JP 2002231794 A JP2002231794 A JP 2002231794A JP 2001027237 A JP2001027237 A JP 2001027237A JP 2001027237 A JP2001027237 A JP 2001027237A JP 2002231794 A JP2002231794 A JP 2002231794A
- Authority
- JP
- Japan
- Prior art keywords
- film
- hole
- lifter
- pin
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えばチタン（Ｔ
ｉ）膜、窒化チタン（ＴｉＮ）膜等の薄膜を被処理体表
面に成膜する成膜装置に用いられる被処理体の載置機構
に関し、更に詳しくは、被処理体の裏面での成膜用ガス
の堆積を防止することができる被処理体の載置機に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention
i) A mounting mechanism of a processing object used in a film forming apparatus for forming a thin film such as a film and a titanium nitride (TiN) film on the surface of the processing object, and more specifically, film formation on the back surface of the processing object. TECHNICAL FIELD The present invention relates to a mounting machine for an object to be processed, which can prevent deposition of a working gas.
【０００２】[0002]
【従来の技術】半導体製造工程には配線膜やバリヤ膜を
成膜する工程がある。バリヤ膜は配線膜の配線材料（例
えば、銅、タングステン、アルミニウム等）とシリコン
との反応を防止する薄膜で、その材料として例えば電気
抵抗が小さく、耐食性に優れたＴｉ、ＴｉＮ等の金属材
料が汎用されている。この成膜工程では配線膜の種類に
即して種々の成膜装置が用いられる。例えばバリヤ膜を
成膜する場合には、極めて薄いＴｉ膜をプラズマＣＶＤ
により成膜し、このＴｉ膜を窒化処理し、更に、ＴｉＣ
ｌ４とアンモニアガスを用いて熱ＣＶＤでＴｉＮ膜を成
膜している。また、成膜処理に先立って被処理体（例え
ば、ウエハ）を載置する載置体等の表面にＴｉＮのプリ
コート膜を施し、載置体上のウエハ面内の熱的均一性を
保持すると共に載置体等に起因する金属汚染等を防止し
ている。2. Description of the Related Art Semiconductor manufacturing processes include a process for forming a wiring film and a barrier film. The barrier film is a thin film for preventing a reaction between a wiring material (for example, copper, tungsten, aluminum, etc.) of the wiring film and silicon. As the material, for example, a metal material such as Ti, TiN having low electric resistance and excellent corrosion resistance is used. It is widely used. In this film forming process, various film forming apparatuses are used according to the type of the wiring film. For example, when forming a barrier film, an extremely thin Ti film is formed by plasma CVD.
The Ti film is nitrided, and
A TiN film is formed by thermal CVD using l4 and ammonia gas. Prior to the film forming process, a pre-coating film of TiN is applied to a surface of a mounting body or the like on which an object to be processed (for example, a wafer) is mounted so as to maintain thermal uniformity in a wafer surface on the mounting body. In addition, metal contamination and the like caused by the mounting body and the like are prevented.
【０００３】而して、例えばＴｉＮ膜の成膜処理には図
６に示す成膜装置が用いられる。この成膜装置は、同図
に示すように、処理容器１と、この処理容器１内に配置
された載置機構２とを備えている。処理容器１の上部に
は成膜用ガスのガス供給部１Ａが形成され、下部には成
膜後のガスを排気する排気部１Ｂが形成されている。ま
た、載置機構２はウエハＷを載置する載置体（サセプ
タ）２Ａと、サセプタ２Ａ上でウエハＷを授受する複数
のリフタピン２Ｂと、これらのリフタピン２Ｂが垂直に
固定されたアーム２Ｃと、このアーム２Ｃを昇降させる
昇降駆動機構（例えば、エアシリンダ）２Ｄとを備えて
いる。また、図６、図７に示すようにサセプタ２Ａには
複数のリフタピン２Ｂに対応する貫通孔２Ｅが形成さ
れ、各貫通孔２Ｅにはリフタピン２Ｂがそれぞれ貫通し
ている。[0006] For example, a film forming apparatus shown in FIG. 6 is used for forming a TiN film. As shown in FIG. 1, the film forming apparatus includes a processing container 1 and a mounting mechanism 2 disposed in the processing container 1. A gas supply unit 1A for film formation gas is formed at the upper part of the processing container 1, and an exhaust part 1B for exhausting the gas after film formation is formed at the lower part. The mounting mechanism 2 includes a mounting body (susceptor) 2A on which the wafer W is mounted, a plurality of lifter pins 2B for transferring the wafer W on the susceptor 2A, and an arm 2C on which the lifter pins 2B are fixed vertically. And a lifting drive mechanism (for example, an air cylinder) 2D for raising and lowering the arm 2C. Further, as shown in FIGS. 6 and 7, through holes 2E corresponding to the plurality of lifter pins 2B are formed in the susceptor 2A, and the lifter pins 2B pass through each through hole 2E.
【０００４】ところで、サセプタ２Ａ上にウエハＷを載
置してＴｉＮ膜を成膜する場合には、通常サセプタ２Ａ
を内蔵ヒータ２Ｆで加熱してウエハＷを例えば６５０〜
６８０℃で成膜処理するため、サセプタ２Ａとアーム２
Ｃが熱膨張する。ところが、サセプタ２Ａとアーム２Ｃ
はそれぞれ異なる材料によって形成されているため、両
者２Ａ、２Ｃ間で熱膨張に差が生じる。そのため、図７
の（ａ）に示すように貫通孔２Ｅの内径は両者２Ａ、２
Ｃ間の熱膨張を吸収する大きさに設定され、成膜処理時
の高温下で両者２Ａ、２Ｃが熱膨張しても図７の（ｂ）
に示すように熱膨張差を貫通孔２Ｅで吸収して一点鎖線
位置から実線位置まで偏倚するようにしてある。When a wafer W is mounted on the susceptor 2A to form a TiN film, the susceptor 2A
Is heated by the built-in heater 2F to bring the wafer W to, for example, 650 to
The susceptor 2A and the arm 2
C thermally expands. However, the susceptor 2A and the arm 2C
Are formed of different materials, there is a difference in thermal expansion between the two 2A and 2C. Therefore, FIG.
As shown in (a) of FIG.
The size is set to absorb the thermal expansion between C and C. Even if both 2A and 2C thermally expand at a high temperature during the film forming process, FIG.
As shown in (2), the difference in thermal expansion is absorbed by the through-hole 2E and is shifted from the dashed line position to the solid line position.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来に
被処理体の載置機構の場合には、貫通孔２Ｅの内径がリ
フタピン２Ｂの外径より大きく設定され、両者２Ａ、２
Ｃ間に大きな隙間があるため、成膜処理時に成膜用ガス
が図７の（ａ）に矢印で示すようにサセプタ２Ａの下面
からリフタピン２Ｂと貫通孔２Ｅ間の隙間を通ってウエ
ハＷの裏面に達し、ウエハＷの裏面や貫通孔２Ｅの内周
面に成膜用ガスの反応生成物等が堆積し、この堆積物が
パーティクルの発生源になる虞がある。また、堆積物が
原因となってリフタピン２Ｂが貫通孔２Ｅで固着し、リ
フタピン２Ｂの動作不良をもたらす虞もある。However, in the case of a conventional mounting mechanism for the object to be processed, the inner diameter of the through hole 2E is set to be larger than the outer diameter of the lifter pin 2B.
Since there is a large gap between C and C, the film forming gas flows from the lower surface of the susceptor 2A through the gap between the lifter pin 2B and the through hole 2E from the lower surface of the susceptor 2A as shown by an arrow in FIG. A reaction product of the film-forming gas or the like is deposited on the back surface of the wafer W and on the inner surface of the through hole 2 </ b> E, and the deposit may be a source of particles. Further, the lifter pins 2B may be fixed in the through holes 2E due to the deposits, and may cause malfunction of the lifter pins 2B.
【０００６】尚、特開平６−３１８６３０号公報には上
述と同種の課題を解決した発明について記載されている
が、機構的に複雑で、コスト的に高くなりがちである。Japanese Patent Application Laid-Open No. 6-318630 describes an invention that solves the same problems as described above, but tends to be mechanically complicated and costly.
【０００７】本発明は、上記課題を解決するためになさ
れたもので、被処理体の裏面での堆積物の生成を確実に
防止して常にリフタピンを円滑に動作させることがで
き、しかも簡単な機構で安価に実現することができる被
処理体の載置機構を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to reliably prevent the formation of deposits on the back surface of the object to be processed and to operate the lifter pins smoothly at all times. It is an object of the present invention to provide a mechanism for placing an object to be processed, which can be realized at a low cost by a mechanism.
【０００８】[0008]
【課題を解決するための手段】本発明の請求項１に記載
の被処理体の載置機構は、処理容器内に配置され且つこ
の処理容器内に供給された成膜用ガスで成膜するための
被処理体を載置する載置体と、この載置体に形成された
複数の貫通孔にそれぞれ挿入され且つ上記被処理体を上
記載置体上で受け渡すための複数のリフタピンと、これ
らのリフタピンを支持する支持体と、この支持体を介し
て上記各リフタピンを昇降させる昇降機構とを備えた載
置機構において、上記リフタピンを上記支持体上に載置
すると共に、上記リフタピンと上記貫通孔の隙間を上記
成膜用ガスが実質的に上記載置体の下面側から上面側へ
通過しない隙間として設定したことを特徴とするもので
ある。According to a first aspect of the present invention, there is provided a mechanism for placing an object to be processed, which is disposed in a processing container and forms a film with a film forming gas supplied into the processing container. And a plurality of lifter pins each of which is inserted into a plurality of through holes formed in the mounting body and transfers the object to be processed on the mounting body. A supporting mechanism that supports these lifter pins, and a mounting mechanism that includes an elevating mechanism that raises and lowers each of the lifter pins through the supporting bodies, wherein the lifter pins are mounted on the supporters, and the lifter pins and The gap between the through holes is set as a gap where the film forming gas does not substantially pass from the lower surface side to the upper surface side of the mounting body.
【０００９】また、本発明の請求項２に記載の被処理体
の載置機構は、処理容器内に配置され且つこの処理容器
内に供給された成膜用ガスで成膜するための被処理体を
載置する載置体と、この載置体に形成された複数の貫通
孔にそれぞれ挿入され且つ上記被処理体を上記載置体上
で受け渡すための複数のリフタピンと、これらのリフタ
ピンを支持する支持体と、この支持体を介して上記各リ
フタピンを昇降させる昇降機構とを備えた載置機構にお
いて、上記各貫通孔の上端に上記載置体の凹陥部をそれ
ぞれ連設すると共に上記各貫通孔に軸部を嵌入して上記
貫通孔を閉じる蓋部材を上記各凹陥部にそれぞれ載置
し、且つ、上記各リフタピンの上端を上記貫通孔内に挿
入すると共に上記リフタピンを上記支持体上に載置した
ことを特徴とするものである。According to a second aspect of the present invention, there is provided an object-to-be-processed mounting mechanism, wherein the object-to-be-processed mounting mechanism is disposed in a processing container and is used for forming a film with a film-forming gas supplied into the processing container. A mounting body for mounting the body, a plurality of lifter pins respectively inserted into a plurality of through holes formed in the mounting body and for delivering the object to be processed on the mounting body; And a lifting mechanism for lifting and lowering each of the lifter pins through the support, wherein the recesses of the mounting body are connected to the upper ends of the through holes, respectively. A lid member that closes the through hole by inserting a shaft into the through hole is placed in each of the concave portions, and the upper end of each lifter pin is inserted into the through hole and the lifter pin is supported. It is characterized by being placed on the body It is.
【００１０】また、本発明の請求項３に記載の被処理体
の載置機構は、請求項１または請求項２に記載の発明に
おいて、上記リフタピンの基端が遊嵌する凹部を上記支
持体上に設けたことを特徴とするものである。According to a third aspect of the present invention, there is provided a mechanism for placing an object to be processed according to the first or second aspect of the present invention, wherein the concave portion into which the base end of the lifter pin is loosely fitted is provided on the support. It is characterized by being provided above.
【００１１】また、本発明の請求項４に記載の被処理体
の載置機構は、発明において、上記リフタピンの長さを
調整可能にしたことを特徴とする請求項１〜請求項３の
いずれか１項に記載のものである。In the invention, there is provided a mechanism for placing an object to be processed, wherein the length of the lifter pin is adjustable. Or 1).
【００１２】また、本発明の請求項５に記載の被処理体
の載置機構は、請求項１〜請求項４のいずれか１項に記
載の発明において、上記載置体にプリコート膜を設けた
ことを特徴とするものである。According to a fifth aspect of the present invention, there is provided a mechanism for mounting an object to be processed according to any one of the first to fourth aspects, wherein the pre-coated film is provided on the above-mentioned object. It is characterized by having.
【００１３】また、本発明の請求項６に記載の被処理体
の載置機構は、請求項１〜請求項５のいずれか１項に記
載の発明において、上記貫通孔の軸方向長さと、上記貫
通孔の内径と上記リフタピンまたは上記蓋部材の軸部の
外径の差とに基づくアスペクト比を少なくとも３０以上
に設定したことを特徴とするものである。According to a sixth aspect of the present invention, there is provided a mechanism for placing an object to be processed, according to any one of the first to fifth aspects, wherein: The aspect ratio based on the difference between the inner diameter of the through hole and the outer diameter of the shaft portion of the lifter pin or the lid member is set to at least 30 or more.
【００１４】[0014]
【発明の実施の形態】以下、図１〜図５に示す実施形態
に基づいて本発明を説明する。本実施形態の被処理体の
載置機構１０は、図１に示すように、処理容器２０内に
配置された載置体（サセプタ）１１と、このサセプタ１
１上で被処理体（例えば、ウエハ）Ｗを受け渡す複数の
リフタピン１２と、これらのリフタピン１２を支持する
支持体（アーム）１３と、このアーム１３を昇降駆動さ
せる昇降駆動機構（例えば、エアシリンダ）１４とを備
えている。処理容器２０は例えばアルマイト加工された
アルミニウムによって形成され、その上部には成膜用ガ
スをシャワー状にして供給する中空状のガス供給部２１
が処理容器２０と一体的に形成されている。このガス供
給部２１の上面には成膜用ガスの供給部２１Ａが形成さ
れ、そのサセプタ１１との対向面２１Ｂ全面には成膜用
ガスをシャワー状にして供給する多数のガス供給孔２１
Ｃが均等に分散して形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the embodiments shown in FIGS. As shown in FIG. 1, the mounting mechanism 10 for the object to be processed according to the present embodiment includes a mounting body (susceptor) 11 disposed in a processing container 20 and a susceptor 1.
1, a plurality of lifter pins 12 for transferring an object to be processed (for example, a wafer) W, a support (arm) 13 for supporting these lifter pins 12, and an elevating drive mechanism (for example, air) for driving the arm 13 up and down. Cylinder 14). The processing container 20 is formed of, for example, anodized aluminum, and has a hollow gas supply unit 21 above which a film-forming gas is supplied in a shower shape.
Are formed integrally with the processing container 20. On the upper surface of the gas supply unit 21, a supply unit 21A for film formation gas is formed, and a large number of gas supply holes 21 for supplying the film formation gas in a shower shape are provided on the entire surface 21B facing the susceptor 11.
C are uniformly distributed.
【００１５】上記サセプタ１１は例えば窒化アルミニウ
ム等のセラミックによって形成され、、支持柱１５によ
って水平に支持されている。サセプタ１１の内部にはヒ
ータ１６が埋設され、ヒータ１６を介してウエハＷを所
定の成膜温度まで加熱し維持するようにしている。リフ
タピン１２は例えばアルミナ等のセラミックによって形
成され、サセプタ１１に形成された貫通孔１１Ａ内に挿
入されている。アーム１３は例えばリフタピン１２と同
様にアルミナによってリング状に形成されている。この
アーム１３はエアシリンダ１４のロッド１４Ａに連結さ
れ、ロッド１４Ａで水平に支持されている。The susceptor 11 is formed of, for example, a ceramic such as aluminum nitride, and is horizontally supported by support columns 15. A heater 16 is embedded in the susceptor 11, and heats and maintains the wafer W at a predetermined film forming temperature via the heater 16. The lifter pin 12 is formed of, for example, a ceramic such as alumina, and is inserted into a through hole 11 </ b> A formed in the susceptor 11. The arm 13 is formed in a ring shape from alumina, for example, like the lifter pin 12. The arm 13 is connected to a rod 14A of an air cylinder 14, and is horizontally supported by the rod 14A.
【００１６】ところで、上記リフタピン１２は、図１に
示すように、下降端に位置する時には上端が少なくとも
貫通孔１１Ａ内に位置し、ウエハＷの受け渡しを行う時
には図２に示すようにエアシリンダ１４を介して貫通孔
１１Ａから突出してウエハＷをサセプタ１１の上方で支
持する。また、リフタピン１２は、図１、図２に示すよ
うに、アーム１３上面にリフタピン１２の基端部の断面
形状に即して形成された凹陥部１３Ａ内に載置されてい
る。従って、リフタピン１２はアーム１３の凹陥部１３
Ａ内で自重により支持されている。また、リフタピン１
２はシムＳによって高さを微調整できるようにしてあ
る。As shown in FIG. 1, the lifter pin 12 has an upper end located at least in the through hole 11A when the lifter pin 12 is located at the lower end, and an air cylinder 14 as shown in FIG. And supports the wafer W above the susceptor 11 by protruding from the through hole 11A. As shown in FIGS. 1 and 2, the lifter pin 12 is placed in a recess 13 </ b> A formed on the upper surface of the arm 13 according to the cross-sectional shape of the base end of the lifter pin 12. Therefore, the lifter pin 12 is provided with the concave portion 13 of the arm 13.
It is supported by its own weight in A. Also, lifter pin 1
The height 2 can be finely adjusted by the shim S.
【００１７】上記凹陥部１３Ａは、成膜処理時の高温下
でサセプタ１１とアーム１３間に熱膨張差を吸収できる
大きさに形成され、熱処理時にサセプタ１１とアーム１
３間で熱膨張差が生じてもリフタピン１２が凹陥部１３
Ａ内で位置ずれするようになっている。このようにサセ
プタ１１とアーム１３間の熱膨張差を凹陥部１３Ａ内で
吸収するようにしてあるため、本実施形態では従来のよ
うにサセプタ１１の貫通孔１１Ａ内径をリフタピン１２
の外径より大きく設定する必要はない。従って、本実施
形態では貫通孔１１Ａは単にリフタピン１２の昇降ガイ
ドとして利用するため、貫通孔１１Ａとリフタピン１２
間の隙間は成膜用ガスが実質的に通過できず、リフタピ
ン１２が貫通孔１１Ａにおいて昇降できる極力狭い隙間
に設定されている。The recess 13A is formed to have a size capable of absorbing a difference in thermal expansion between the susceptor 11 and the arm 13 at a high temperature during the film forming process.
Even if a thermal expansion difference occurs between the lifter pins 3, the lifter pins 12
The position is shifted within A. As described above, since the difference in thermal expansion between the susceptor 11 and the arm 13 is absorbed in the recess 13A, in the present embodiment, the inner diameter of the through hole 11A of the susceptor 11 is reduced as in the related art.
It is not necessary to set larger than the outer diameter of. Therefore, in this embodiment, the through-hole 11A is simply used as a lift guide for the lifter pin 12, so that the through-hole 11A and the lifter pin 12
The gap between them is set as small as possible so that the film forming gas cannot substantially pass through and the lifter pin 12 can move up and down in the through hole 11A.
【００１８】そこで、上記隙間と成膜用ガスの通過の関
係について検討した結果、隙間を以下のように設定すれ
ば良いことが判った。即ち、図３に示すように、上記貫
通孔１１Ａの内径をＤ、リフタピン１２の外径をｄ及び
貫通孔１１Ａの厚さ（本実施形態では貫通孔の上端に凹
陥部（座ぐり）が形成されているため、凹陥部の底面か
らサセプタ１１の下面までの長さ）をｔとして設定し、
サセプタ１１の厚さｔと隙間（（Ｄ−ｄ）／２）との関
係をアスペクト比（ｔ／〔（Ｄ−ｄ）／２〕）として定
義して隙間におけるガス通過を観察すると、アスペクト
比を少なくとも３０、より好ましくは８０〜１００に設
定すれば、隙間における成膜用ガスの通過を防止するこ
とができ、ひいてはウエハＷ裏面での成膜用ガスの反応
生成物の堆積を防止してパーティクルの発生源を無く
し、更に、貫通孔１１Ａ内における反応生成物の付着を
防止して貫通孔１１Ａにおけるリフタピン１２の固着を
防止することができる。Therefore, as a result of studying the relationship between the gap and the passage of the film-forming gas, it was found that the gap should be set as follows. That is, as shown in FIG. 3, the inner diameter of the through-hole 11A is D, the outer diameter of the lifter pin 12 is d, and the thickness of the through-hole 11A (in the present embodiment, a recessed portion (borehole) is formed at the upper end of the through-hole). Therefore, the length from the bottom surface of the concave portion to the lower surface of the susceptor 11) is set as t,
When the relationship between the thickness t of the susceptor 11 and the gap ((D−d) / 2) is defined as an aspect ratio (t / [(D−d) / 2]) and the gas passage through the gap is observed, the aspect ratio is Is set to at least 30, more preferably 80 to 100, it is possible to prevent the film-forming gas from passing through the gap, thereby preventing the deposition of the reaction product of the film-forming gas on the back surface of the wafer W. A source of particles can be eliminated, and furthermore, a reaction product can be prevented from adhering in the through-hole 11A, thereby preventing the lifter pin 12 from being fixed in the through-hole 11A.
【００１９】以上説明したように本実施形態によれば、
リフタピン１２をアーム１３上に載置すると共に、リフ
タピン１２と貫通孔１１Ａの隙間を成膜用ガスが実質的
にサセプタ１１の下面側から上面側へ通過しない大き
さ、より具体的には隙間とサセプタ１１の厚さのアスペ
クト比を少なくとも３０、より好ましくは８０〜１００
に設定したため、成膜処理時にウエハＷの裏面や貫通孔
１１Ａ内での反応生成物の堆積を防止してパーティクル
の発生源を無くすると共に貫通孔１１Ａでのリフタピン
１２の固着を防止することができる。従って、成膜処理
時には常にリフタピン１２が円滑に作動し、成膜処理前
後のウエハＷの受け渡しを円滑に行うことができる。し
かも、リフタピン１２をアーム１３上に載置するだけの
構造であるため、コスト的にも従来のものと殆ど変わら
ず、低コストで実現することができ、また、従来の載置
機構の構造に少し手を加えるだけで本実施形態の載置機
構１０を得ることができる。As described above, according to the present embodiment,
The lifter pin 12 is placed on the arm 13 and has a size such that the film-forming gas does not substantially pass from the lower surface to the upper surface of the susceptor 11 through the gap between the lifter pin 12 and the through hole 11A. The aspect ratio of the thickness of the susceptor 11 is at least 30, more preferably 80 to 100.
Therefore, it is possible to prevent deposition of reaction products on the back surface of the wafer W and in the through-hole 11A during the film forming process, eliminate the source of particles, and prevent the lifter pins 12 from being fixed in the through-hole 11A. it can. Accordingly, the lifter pins 12 always operate smoothly during the film forming process, and the wafer W can be smoothly transferred before and after the film forming process. In addition, since the structure is such that the lifter pin 12 is merely mounted on the arm 13, the cost is almost the same as that of the conventional one, and can be realized at low cost. The mounting mechanism 10 of the present embodiment can be obtained with only a little modification.
【００２０】また、図４は本発明の他の実施形態を示す
要部断面図である。本実施形態ではサセプタ１１の全面
にプリコート膜１７を施した以外は上記実施形態に準じ
て構成されている。プリコート膜１７はウエハＷの成膜
処理に先立って成膜用ガスを用いて処理容器２０内に例
えばＴｉＮ膜を施すことによって形成される薄膜であ
る。このようにプリコート膜を施すことにより成膜用ガ
スが貫通孔１１Ａの隙間を殆ど通過せず、ウエハＷの裏
面まで達しなくなる。その理由は、ウエハＷへの成膜処
理時に成膜用ガスが貫通孔１１Ａの下端開口（入口）近
傍のプリコート膜１７と直に反応して入口近傍における
成膜用ガスの殆どが消費され、貫通孔１１Ａ内で成膜用
ガスの濃度勾配が急激に低下するためと考えられる。従
って、上述のようにアスペクト比を設定した上で成膜処
理に先立ってサセプタ１１全面にプリコート膜１７を設
けることで、成膜プロセス条件によってはウエハＷ裏面
等における反応生成物の堆積及びリフタピン１２の固着
をより確実に防止することができる。FIG. 4 is a sectional view of a main part showing another embodiment of the present invention. In the present embodiment, the configuration is the same as that of the above embodiment except that the precoat film 17 is applied to the entire surface of the susceptor 11. The precoat film 17 is a thin film formed by, for example, applying a TiN film in the processing chamber 20 using a film forming gas before forming a film on the wafer W. By applying the precoat film in this manner, the film forming gas hardly passes through the gap between the through holes 11A, and does not reach the back surface of the wafer W. The reason is that the film forming gas directly reacts with the precoat film 17 near the lower end opening (entrance) of the through hole 11A during the film forming process on the wafer W, and most of the film forming gas near the inlet is consumed. It is considered that the concentration gradient of the film forming gas sharply decreases in the through hole 11A. Therefore, by setting the aspect ratio as described above and providing the precoat film 17 on the entire surface of the susceptor 11 prior to the film forming process, depending on the film forming process conditions, the deposition of the reaction product on the back surface of the wafer W and the lifter pin 12 Can be more reliably prevented from sticking.
【００２１】また、図５の（ａ）、（ｂ）は本発明の更
に他の実施形態を示す図である。本実施形態では、貫通
孔１１Ａに蓋部材１８を設け、この蓋部材１８をリフタ
ピン１２で突き上げるようにしたものである。そして、
サセプタ１１の貫通孔１１Ａの上端開口には凹陥部１１
Ｂが連設され、貫通孔１１Ａの軸心と凹陥部１１Ｂの軸
心は互いに一致している。その他は図１〜図３に示す実
施形態に準じて構成されている。FIGS. 5A and 5B are views showing still another embodiment of the present invention. In the present embodiment, a cover member 18 is provided in the through hole 11 </ b> A, and the cover member 18 is pushed up by the lifter pin 12. And
A recess 11 is formed at the upper end opening of the through hole 11A of the susceptor 11.
B are continuously provided, and the axis of the through hole 11A and the axis of the recess 11B coincide with each other. Others are configured according to the embodiment shown in FIGS.
【００２２】而して、上記蓋部材１８は、図５の
（ａ）、（ｂ）に示すように、キャップ部１８Ａと、こ
のキャップ部１８Ａの下面に連設された軸部１８Ｂとか
らなっている。キャップ部１８Ａの直径は貫通孔１１Ａ
の直径より大径で凹陥部１１Ｂの直径より小径に形成さ
れ、軸部１８Ｂの直径は貫通孔１１Ａの直径より小径に
形成されている。そして、キャップ部１８Ａの下面と凹
陥部１１Ｂの底面は互いに密着するように形成されてい
る。キャップ部１８Ａと凹陥部１１Ｂの底面は互いに密
着すれば、平坦面、テーパ面等の如何なる形態であって
も良い。また、軸部１８Ｂは中空状に形成され、この中
空部にリフタピン１２の先端が嵌入している。従って、
蓋部材１８は、軸部１８Ｂが貫通孔１１Ａ内に嵌入する
と共にキャップ部１８Ａで貫通孔１１Ａの上端開口を閉
じている。キャップ部１８Ａは軸部１８Ｂが貫通孔１１
Ａ内で偏っても貫通孔１１Ａの上端開口を閉じる大きさ
に形成されている。軸部１８Ｂと貫通孔１１Ａの隙間は
貫通孔１１Ａ内での反応生成物の付着を防止するために
上記各実施形態の隙間が好ましい。As shown in FIGS. 5A and 5B, the lid member 18 includes a cap portion 18A and a shaft portion 18B connected to the lower surface of the cap portion 18A. ing. The diameter of the cap portion 18A is the through hole 11A.
Is larger than the diameter of the recess 11B, and the diameter of the shaft 18B is smaller than the diameter of the through hole 11A. The lower surface of the cap portion 18A and the bottom surface of the concave portion 11B are formed so as to be in close contact with each other. As long as the cap portion 18A and the bottom surface of the concave portion 11B are in close contact with each other, any shape such as a flat surface or a tapered surface may be used. The shaft portion 18B is formed in a hollow shape, and the tip of the lifter pin 12 is fitted into the hollow portion. Therefore,
In the lid member 18, the shaft portion 18B is fitted into the through hole 11A, and the upper end opening of the through hole 11A is closed by the cap portion 18A. The cap portion 18A has a shaft portion 18B in which the through hole 11 is formed.
It is formed in a size that closes the upper end opening of the through hole 11A even if it is biased in A. The gap between the shaft portion 18B and the through-hole 11A is preferably the gap of each of the above embodiments in order to prevent the reaction products from being adhered in the through-hole 11A.
【００２３】また、上記リフタピン１２は、例えば、小
径部１２Ａと、大径部１２Ｂと、これら両者を繋ぐ連結
部１２Ｃからなっている。小径部１２Ａの直径は蓋部材
１８の軸部１８Ｂの中空部に嵌入するように形成され、
連結部１２Ｃは小径部１２Ａから大径部１２Ｂへと徐々
に太くなるように形成されている。小径部１２Ａの先端
は軸部１８Ｂの最奥部に達しているが、貫通孔１１Ａが
十分に長い場合には達していなくても良く、リフタピン
１２で蓋部材１８をサセプタ１１の上方へ突き上げるこ
とができれば良い。従って、蓋部材１８の軸部１８Ｂは
中空状でなくても良い。軸部１８Ｂが中空でない場合に
は、軸部１８Ｂの下端が貫通孔１１Ａの下端に達するこ
となく、貫通孔１１Ａの下端の空間にリフタピン１２を
挿入でき、リフタピン１２、蓋部材１８の昇降によって
抜け落ちなければ良い。リフタピン１２も上記各実施形
態と同様にアーム１３の凹陥部１３Ａ内に載置されてい
る。従って、本実施形態によれば、蓋部材１８のキャッ
プ部１８Ａで貫通孔１１Ａを閉じることができるため、
上記各実施形態と同様の作用効果を期することができ
る。尚、本実施形態の場合にはサセプタ１１にプリコー
ト膜を設けなくてもウエハＷ裏面への堆積物の生成等を
確実に防止することができる。The lifter pin 12 includes, for example, a small-diameter portion 12A, a large-diameter portion 12B, and a connecting portion 12C that connects the two. The diameter of the small diameter portion 12A is formed so as to fit into the hollow portion of the shaft portion 18B of the lid member 18,
The connecting portion 12C is formed so as to gradually increase in thickness from the small diameter portion 12A to the large diameter portion 12B. The distal end of the small diameter portion 12A reaches the innermost portion of the shaft portion 18B, but may not reach when the through hole 11A is sufficiently long. The lifter pin 12 pushes the lid member 18 upward above the susceptor 11. I hope I can do it. Therefore, the shaft portion 18B of the lid member 18 does not have to be hollow. When the shaft portion 18B is not hollow, the lifter pin 12 can be inserted into the space at the lower end of the through hole 11A without the lower end of the shaft portion 18B reaching the lower end of the through hole 11A. Good if not. The lifter pin 12 is also placed in the recess 13A of the arm 13 as in the above embodiments. Therefore, according to the present embodiment, since the through-hole 11A can be closed by the cap portion 18A of the lid member 18,
The same operation and effect as the above embodiments can be expected. In the case of the present embodiment, generation of deposits on the rear surface of the wafer W can be reliably prevented without providing the susceptor 11 with a precoat film.
【００２４】[0024]
【実施例】次に、実施例に基づいてアスペクト比やプリ
コート膜の作用効果について具体的に説明する。Next, the operation and effects of the aspect ratio and the precoat film will be specifically described based on examples.
【００２５】実施例１ 本実施例では、まず下記サセプタにプリコート膜を設け
た。この際、２００ｍｍ用のサセプタを使用し、サセプ
タの貫通孔としては下記の一種類で、リフタピンとして
は下記の三種類を使用した。次いで、ウエハにＴｉＮ膜
を施したが、この成膜プロセスではウエハの裏面に成膜
用ガスの反応生成物を確実に堆積させるために、通常の
ウエハへの成膜厚（２０ｎｍ）に要する処理時間の５倍
の時間（５分）でプロセス圧力も十分に高い高圧プロセ
ス条件でウエハにＴｉＮ膜を施した。そして、成膜後に
ウエハ裏面での貫通孔における堆積物（ピン孔跡）の有
無を目視観察し、その結果を下記表１にピン孔跡の有無
として示した。尚、表１には三種類のリフタピンは、蓋
部材の無い二種類のリフタピンをストレートピン、
として、蓋部材の有るリフタピンを蓋付きピンとして示
した。 ［サセプタの条件］ サセプタ厚：１７．０ｍｍ 凹陥部深さ： ３．１ｍｍ 貫通孔直径： ４．０ｍｍ リフタピン： ストレートピンの直径＝３．６ｍｍ ストレートピンの直径＝３．４ｍｍ 蓋付きピンの軸部の直径＝３．６ｍｍExample 1 In this example, first, a precoat film was provided on the following susceptor. At this time, a susceptor for 200 mm was used, and one type of through hole of the susceptor was used, and the following three types of lifter pins were used. Next, a TiN film was applied to the wafer. In this film forming process, in order to reliably deposit a reaction product of a film forming gas on the back surface of the wafer, a process required for a normal film thickness (20 nm) on the wafer was used. The TiN film was applied to the wafer under high pressure processing conditions in which the process pressure was sufficiently high for a time five times as long as the time (5 minutes). After film formation, the presence or absence of deposits (traces of pin holes) in the through holes on the back surface of the wafer was visually observed. The results are shown in Table 1 below as the presence or absence of traces of pin holes. In Table 1, the three types of lifter pins are two types of lifter pins without a lid member.
The lifter pin having a lid member is shown as a pin with a lid. [Conditions of susceptor] Susceptor thickness: 17.0 mm Depressed portion depth: 3.1 mm Diameter of through hole: 4.0 mm Lifter pin: Straight pin diameter = 3.6 mm Straight pin diameter = 3.4 mm Shaft of lid pin Diameter = 3.6mm
【００２６】実施例２ 本実施例では実施例１と同一のサセプタを使用し、サセ
プタにはプリコート膜を設けなかった。そして、ウエハ
にＴｉＮ膜を施したが、この成膜プロセスでは成膜時間
が５分でプロセス圧力は比較的低い低圧プロセス条件で
ウエハに成膜処理を施した後、実施例１と同様にピン孔
跡の有無を目視観察し、その結果を下記表１に示した。Example 2 In this example, the same susceptor as in Example 1 was used, and the susceptor was not provided with a precoat film. Then, a TiN film was formed on the wafer. In this film forming process, the film was formed on the wafer under a low pressure process condition in which the film forming time was 5 minutes and the process pressure was relatively low. The presence or absence of a hole mark was visually observed, and the results are shown in Table 1 below.
【００２７】［比較例１］本比較例では実施例１と同一
のサセプタを使用し、サセプタにプリコート膜を設けず
に、実施例１と同一の高圧プロセス条件で成膜処理を施
した後、実施例１と同様にピン孔跡の有無を目視観察
し、その結果を下記の表１に示した。[Comparative Example 1] In this comparative example, the same susceptor as in Example 1 was used, and a film was formed under the same high-pressure process conditions as in Example 1 without providing a precoat film on the susceptor. The presence or absence of a trace of a pin hole was visually observed in the same manner as in Example 1, and the results are shown in Table 1 below.
【００２８】[0028]
【表１】 [Table 1]
【００２９】上記表１に示す結果によれば、プリコート
膜を設けた実施例１の場合にはストレートピン、共
に一枚目のウエハからピン孔跡が確認されなかった。つ
まり、アスペクト比が７０であるストレートピン、ア
スペクト比が４６であるストレートピンのいずれの場
合にもピン孔跡が無く、堆積物の生成が認められなかっ
た。これに対して、プリコート膜を設けない比較例１の
場合にはストレートピンに３枚目のウエハまでピン孔
跡が確認された。この比較例１ではストレートピンに
ついてのデータはないが、ストレートピンはストレー
トピンよりも隙間が大きくなることからピン孔跡が認
められると推定される。According to the results shown in Table 1 above, in the case of Example 1 in which the precoat film was provided, no trace of pin holes was observed from the first wafer in both of the straight pins. In other words, no pin holes were found in any of the straight pins having an aspect ratio of 70 and the straight pins having an aspect ratio of 46, and no formation of deposits was observed. On the other hand, in the case of Comparative Example 1 in which the precoat film was not provided, traces of pin holes were confirmed on the straight pins up to the third wafer. Although there is no data on the straight pin in Comparative Example 1, it is presumed that a pin hole mark is recognized since the straight pin has a larger gap than the straight pin.
【００３０】これらのことから、サセプタにプリコート
膜が施されている場合には、ウエハに成膜処理を施す時
に貫通孔の入口近傍のプリコート膜において成膜用ガス
が反応して貫通孔内での濃度勾配が急激に低下し、ウエ
ハまで達しないと推定される。これに対して、プリコー
ト膜のない場合には、ウエハへの成膜時にサセプタでの
成膜反応に潜伏時間（INCUBATION TIME）があって未反
応の成膜用ガスが消費しきれずに貫通孔を通過してウエ
ハ裏面に堆積物が生成するものと推定される。また、実
施例１の蓋付きピンの場合には当然のことではあるがピ
ン孔跡が確認されなかった。From these facts, when the susceptor is provided with a pre-coat film, the film-forming gas reacts in the pre-coat film near the entrance of the through-hole when the wafer is subjected to the film-forming process, and the pre-coat film reacts in the through-hole. Is presumed that the concentration gradient of the liquid crystal rapidly decreases and does not reach the wafer. On the other hand, when there is no pre-coat film, the susceptor has an incubation time during the film formation reaction on the wafer, and the unreacted film forming gas cannot be completely consumed. It is presumed that the deposit passes through and forms a deposit on the back surface of the wafer. In the case of the pin with the lid of Example 1, traces of pin holes were not confirmed, as a matter of course.
【００３１】一方、プリコート膜のないサセプタを用い
て低圧プロセス条件でウエハに成膜処理を施した場合に
は、上記表１の結果からも明らかなようにストレートピ
ンの場合でも一枚目のウエハからウエハ裏面にピン孔
跡が確認されなかった。ストレートピンについては確
認してないが、隙間の大きなストレートピンでピン孔
跡が確認されないことから、ストレートピンの場合で
もウエハの裏面に堆積物が生成しないものと推定され
る。つまり、低圧プロセスであれば、ストレートピンの
アスペクト比が４６もあれば、ウエハ裏面に堆積物が生
成されないことが判った。On the other hand, when a film is formed on a wafer under a low-pressure process condition using a susceptor without a precoat film, as is clear from the results shown in Table 1, even in the case of straight pins, the first wafer No pin hole traces were found on the back surface of the wafer. Straight pins were not confirmed, but no trace of pin holes was observed on the straight pins having a large gap. Therefore, it is presumed that no deposit was formed on the back surface of the wafer even with the straight pins. That is, in the case of the low-pressure process, if the aspect ratio of the straight pins is 46, no deposit is generated on the back surface of the wafer.
【００３２】尚、本発明は上記各実施形態に何等制限さ
れるものではない。例えば、上記実施形態ではアーム上
にリフタピンを載置する凹陥部を設けた場合について説
明したが、この凹陥部は設けなくても良い。要は、リフ
タピンを支持体上に載置し、リフタピンと貫通孔との隙
間をリフタピンが昇降し得る最小限の隙間に設定してあ
れば良い。The present invention is not limited to the above embodiments. For example, in the above-described embodiment, the case where the concave portion for mounting the lifter pin is provided on the arm has been described, but the concave portion may not be provided. The point is that the lifter pin is placed on the support, and the gap between the lifter pin and the through hole is set to the minimum gap that allows the lifter pin to move up and down.
【００３３】[0033]
【発明の効果】本発明の請求項１〜請求項５に記載の発
明によれば、被処理体の裏面での堆積物の生成を確実に
防止して常にリフタピンを円滑に動作させることがで
き、しかも簡単な機構で安価に実現することができる被
処理体の載置機構を提供することができる。According to the first to fifth aspects of the present invention, it is possible to reliably prevent the formation of deposits on the back surface of the object to be processed and to always operate the lifter pins smoothly. In addition, it is possible to provide a mounting mechanism for the object to be processed which can be realized at a low cost with a simple mechanism.
【図１】本発明の被処理体の載置機構の一実施形態の要
部を示す断面図である。FIG. 1 is a cross-sectional view illustrating a main part of an embodiment of a mounting mechanism for a workpiece according to the present invention.
【図２】図１に示すサセプタ上でウエハを受け渡す時の
リフタピンとウエハとの関係を示す部分断面図である。FIG. 2 is a partial cross-sectional view showing a relationship between lifter pins and a wafer when the wafer is transferred on a susceptor shown in FIG.
【図３】リフタピンと隙間のアスペクト比を説明するた
めの断面図である。FIG. 3 is a cross-sectional view illustrating an aspect ratio between a lifter pin and a gap.
【図４】図１に示すサセプタにプリコート膜を設けた状
態を拡大して示す模式図である。FIG. 4 is an enlarged schematic view showing a state in which a precoat film is provided on the susceptor shown in FIG. 1;
【図５】本発明の被処理体の載置機構の他の実施形態の
要部を拡大して示す断面図で、（ａ）はウエハを受け渡
す状態を示す図、（ｂ）はウエハをサセプタ上に載置し
た状態を示す図である。FIGS. 5A and 5B are enlarged cross-sectional views showing a main part of another embodiment of the object mounting mechanism of the present invention, wherein FIG. 5A is a view showing a state of transferring a wafer, and FIG. It is a figure showing the state where it was mounted on the susceptor.
【図６】従来の成膜装置の断面構造を示す概念図であ
る。FIG. 6 is a conceptual diagram showing a cross-sectional structure of a conventional film forming apparatus.
【図７】図１に示すサセプタとリフタピンの関係を示す
要部断面図で、（ａ）は常温状態を示す図、（ｂ）は成
膜処理時を示す図である。7A and 7B are cross-sectional views of main parts showing a relationship between a susceptor and a lifter pin shown in FIG. 1, wherein FIG. 7A is a diagram showing a normal temperature state, and FIG. 7B is a diagram showing a film forming process.
１０ 被処理体の載置機構 １１ サセプタ １１Ａ 貫通孔 １１Ｂ 凹陥部 １２ リフタピン １３ アーム（支持体） １３Ａ 凹陥部 １４ 昇降駆動機構 １８ 蓋部材 １８Ａ キャップ部 １８Ｂ 軸部 DESCRIPTION OF SYMBOLS 10 Placement mechanism of a to-be-processed object 11 Susceptor 11A Through-hole 11B Depressed part 12 Lifter pin 13 Arm (support) 13A Depressed part 14 Elevation drive mechanism 18 Cover member 18A Cap part 18B Shaft part
Claims (6)
内に供給された成膜用ガスで成膜するための被処理体を
載置する載置体と、この載置体に形成された複数の貫通
孔にそれぞれ挿入され且つ上記被処理体を上記載置体上
で受け渡すための複数のリフタピンと、これらのリフタ
ピンを支持する支持体と、この支持体を介して上記各リ
フタピンを昇降させる昇降機構とを備えた載置機構にお
いて、上記リフタピンを上記支持体上に載置すると共
に、上記リフタピンと上記貫通孔の隙間を上記成膜用ガ
スが実質的に上記載置体の下面側から上面側へ通過しな
い隙間として設定したことを特徴とする被処理体の載置
機構。1. A mounting body for mounting an object to be processed, which is disposed in a processing chamber and for forming a film with a film forming gas supplied into the processing chamber, and formed on the mounting body. A plurality of lifter pins respectively inserted into a plurality of through holes and for delivering the object to be processed on the mounting body, a support for supporting the lifter pins, and lifting and lowering of each of the lifter pins via the support A lifting mechanism that lifts and lowers the lifter pin on the support, and the gap between the lifter pin and the through-hole is substantially filled with the film-forming gas on the lower surface side of the mounting body. Characterized in that it is set as a gap that does not pass from the upper side to the upper side.
内に供給された成膜用ガスで成膜するための被処理体を
載置する載置体と、この載置体に形成された複数の貫通
孔にそれぞれ挿入され且つ上記被処理体を上記載置体上
で受け渡すための複数のリフタピンと、これらのリフタ
ピンを支持する支持体と、この支持体を介して上記各リ
フタピンを昇降させる昇降機構とを備えた載置機構にお
いて、上記各貫通孔の上端に上記載置体の凹陥部をそれ
ぞれ連設すると共に上記各貫通孔に軸部を嵌入して上記
貫通孔を閉じる蓋部材を上記各凹陥部にそれぞれ載置
し、且つ、上記各リフタピンの上端を上記貫通孔内に挿
入すると共に上記リフタピンを上記支持体上に載置した
ことを特徴とする被処理体の載置機構。2. A mounting body for mounting an object to be processed, which is disposed in a processing chamber and for forming a film with a film forming gas supplied into the processing chamber, and formed on the mounting body. A plurality of lifter pins respectively inserted into a plurality of through holes and for delivering the object to be processed on the mounting body, a support for supporting the lifter pins, and lifting and lowering of each of the lifter pins via the support A lid member for closing the through-hole by connecting a recessed portion of the mounting body to the upper end of each of the through-holes and fitting a shaft into each of the through-holes. Wherein each of the lifter pins is placed in each of the recesses, and the upper end of each of the lifter pins is inserted into the through-hole, and the lifter pins are placed on the support. .
上記支持体上に設けたことを特徴とする請求項１または
請求項２に記載の被処理体の載置機構。3. The mechanism according to claim 1, wherein a concave portion into which the base end of the lifter pin is loosely fitted is provided on the support.
ことを特徴とする請求項１〜請求項３のいずれか１項に
記載の被処理体の載置機構。4. The mechanism according to claim 1, wherein a length of the lifter pin is adjustable.
を特徴とする請求項１〜請求項４のいずれか１項に記載
の被処理体の載置機構。5. The mounting mechanism for an object to be processed according to claim 1, wherein a precoat film is provided on the mounting body.
の内径と上記リフタピンまたは上記蓋部材の軸部の外径
の差とに基づくアスペクト比を少なくとも３０以上に設
定したことを特徴とする請求項１〜請求項５のいずれか
１項に記載の被処理体の載置機構。6. An aspect ratio based on an axial length of the through hole and an inner diameter of the through hole and a difference between an outer diameter of a shaft portion of the lifter pin or the lid member is set to at least 30 or more. The mounting mechanism of an object to be processed according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001027237A JP4477784B2 (en) | 2001-02-02 | 2001-02-02 | Placement mechanism of workpiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001027237A JP4477784B2 (en) | 2001-02-02 | 2001-02-02 | Placement mechanism of workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002231794A true JP2002231794A (en) | 2002-08-16 |
| JP4477784B2 JP4477784B2 (en) | 2010-06-09 |
Family
ID=18891932
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001027237A Expired - Lifetime JP4477784B2 (en) | 2001-02-02 | 2001-02-02 | Placement mechanism of workpiece |
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| Country | Link |
|---|---|
| JP (1) | JP4477784B2 (en) |
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