JP2002198571A - Semiconductor light emitting device and optical printer head using the same - Google Patents
Semiconductor light emitting device and optical printer head using the sameInfo
- Publication number
- JP2002198571A JP2002198571A JP2000395993A JP2000395993A JP2002198571A JP 2002198571 A JP2002198571 A JP 2002198571A JP 2000395993 A JP2000395993 A JP 2000395993A JP 2000395993 A JP2000395993 A JP 2000395993A JP 2002198571 A JP2002198571 A JP 2002198571A
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- Prior art keywords
- light
- light emitting
- emitting element
- emitting device
- semiconductor
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- Led Devices (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＥＤ（Light Em
itting Diode）等の発光素子を有する半導体発光装置及
びそれを用いた光プリンタヘッドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED (Light Em
The present invention relates to a semiconductor light emitting device having a light emitting element such as an itting diode and an optical printer head using the same.
【０００２】[0002]
【従来の技術】従来より、ＬＥＤプリンタヘッド等の光
プリンタヘッドが電子写真プリンタやデジタル複写機等
の露光手段として用いられている。2. Description of the Related Art Conventionally, optical printer heads such as LED printer heads have been used as exposure means for electrophotographic printers and digital copiers.
【０００３】かかる光プリンタヘッドに搭載される半導
体発光装置としては、例えば図４に示す如く、基板１１
の上面に、ｐ型化合物半導体の単結晶薄膜とｎ型化合物
半導体の単結晶薄膜とを積層して成る発光素子１２を複
数個、一列状に配設させた構造のものが知られており、
前記発光素子１２に所定の電力を印加して発光素子１２
のｐ型化合物半導体中に電子を、ｎ型化合物半導体中に
正孔をそれぞれ注入し、これらをｐ型化合物半導体とｎ
型化合物半導体との間に形成されるｐｎ接合付近で再結
合させるとともに、その際に生じたエネルギーを光に変
換し、これを外部へ放出させることによって半導体発光
装置として機能する。As a semiconductor light emitting device mounted on such an optical printer head, for example, as shown in FIG.
On the upper surface of the device, a structure in which a plurality of light emitting elements 12 each formed by laminating a single crystal thin film of a p-type compound semiconductor and a single crystal thin film of an n-type compound semiconductor are arranged in a row is known,
A predetermined power is applied to the light emitting element 12 to
Are injected into the p-type compound semiconductor and holes are injected into the n-type compound semiconductor, respectively.
It functions as a semiconductor light emitting device by recombining near the pn junction formed with the type compound semiconductor, converting the energy generated at that time into light, and emitting the light to the outside.
【０００４】尚、上述の半導体発光装置を光プリンタヘ
ッドに用いる場合、発光素子１２の発した光はロッドレ
ンズアレイ等の光学系を介して外部の感光体に照射・結
像されるようになっており、感光体の表面には照射され
た光のパターンに応じた所定の潜像が形成される。When the above-described semiconductor light emitting device is used for an optical printer head, light emitted from the light emitting element 12 is irradiated and imaged on an external photosensitive member via an optical system such as a rod lens array. A predetermined latent image is formed on the surface of the photoreceptor in accordance with the pattern of the irradiated light.
【０００５】[0005]
【発明が解決しようとする課題】ところで、半導体発光
装置を光プリンタヘッドに用いる場合、感光体の表面に
良好な潜像を形成するには、全ての発光素子１２の発光
輝度を出来るだけ均一に揃えておくことが重要である。When a semiconductor light emitting device is used in an optical printer head, in order to form a good latent image on the surface of a photoreceptor, the light emission luminance of all light emitting elements 12 is made as uniform as possible. It is important to keep them aligned.
【０００６】しかしながら、上述した従来の半導体発光
装置においては、発光素子１２が従来周知の半導体製造
技術によって形成されており、かかる製法によって製作
された発光素子１２は、それを形成する化合物半導体の
転位密度やドーピング濃度，膜厚，組成等を全て等しく
制御することが実質的に不可能で、±２５％程度の発光
バラツキを有したものが一般的である。それ故、発光バ
ラツキを出来るだけ小さく抑えるために発光素子１２へ
の印加電力や発光時間等を調整するといった試みがなさ
れているが、そのような電気的な制御を行うには特殊な
電源回路や補正回路等が別途、必要になり、半導体発光
装置が搭載される光プリンタヘッド等の構成を複雑化さ
せて製造コストの上昇を招く上に、データ処理速度が著
しく低下して、発光素子１２を高速で発光・駆動させる
ことが困難になる欠点を有していた。However, in the above-described conventional semiconductor light-emitting device, the light-emitting element 12 is formed by a conventionally known semiconductor manufacturing technique, and the light-emitting element 12 manufactured by such a manufacturing method has a dislocation of a compound semiconductor forming the light-emitting element 12. It is practically impossible to control the density, the doping concentration, the film thickness, the composition, and the like all equally, and generally has a light emission variation of about ± 25%. Therefore, attempts have been made to adjust the power applied to the light-emitting element 12, the light-emission time, and the like in order to suppress the light-emission variation as small as possible. A correction circuit or the like is separately required, which complicates the configuration of an optical printer head or the like in which the semiconductor light emitting device is mounted, thereby increasing the manufacturing cost. There is a disadvantage that it is difficult to emit light and drive at high speed.
【０００７】また上述した従来の半導体発光装置におい
ては、発光素子１２の内部で発生した光は放射状に広が
りつつ外部へ放出されるようになっており、発光素子１
２の発した光の多くが周囲に逃げてしまっている。この
ため、発光素子１２の光の強度は著しく低下することと
なり、例えば発光素子１２の光を感光体の潜像形成に用
いる場合には、感光体に照射される光の強度が不足しが
ちになり、画像が不鮮明になる欠点も有していた。In the conventional semiconductor light emitting device described above, light generated inside the light emitting element 12 is emitted to the outside while spreading radially.
Most of the light emitted from 2 has escaped to the surroundings. For this reason, the light intensity of the light emitting element 12 is significantly reduced. For example, when the light of the light emitting element 12 is used for forming a latent image on the photoreceptor, the light intensity applied to the photoreceptor tends to be insufficient. This has the disadvantage that the image becomes unclear.
【０００８】本発明は上記欠点に鑑み案出されたもの
で、その目的は、構成を複雑化させることなく、全ての
発光素子を均一に、かつ高速で発光・駆動させることが
できる高性能の半導体発光装置、並びに光プリンタヘッ
ドを提供することにある。The present invention has been made in view of the above-mentioned drawbacks, and has as its object to provide a high-performance device capable of uniformly and rapidly emitting and driving all the light-emitting elements without complicating the configuration. An object of the present invention is to provide a semiconductor light emitting device and an optical printer head.
【０００９】[0009]
【課題を解決するための手段】本発明の半導体発光装置
は、基板の上面に、半導体薄膜から成る発光素子を複数
個、配設させるとともに、これら発光素子の上面に透明
な樹脂，ガラスもしくはセラミックスから成る光量補正
膜を被着させ、前記発光素子の光が通過する光量補正膜
の表面に該発光素子の発光輝度に応じた曲面加工を施し
てなるものである。According to a semiconductor light emitting device of the present invention, a plurality of light emitting elements made of a semiconductor thin film are disposed on an upper surface of a substrate, and a transparent resin, glass or ceramic is formed on the upper surface of the light emitting elements. And a curved surface processing is performed on the surface of the light quantity correction film through which the light of the light emitting element passes, according to the light emission luminance of the light emitting element.
【００１０】また本発明の半導体発光装置は、前記光量
補正膜の表面が略球面状をなすように形成されており、
かつ該光量補正膜表面の曲率半径（Ｒ）と前記光量補正
膜の最大厚み（Ｔmax）と前記発光素子上面の幅（Ｗ）
とが式「０．５≦Ｒ／Ｗ≦１．０、０．１≦Ｔmax／Ｗ
≦２．０」を満足するように設定されていることを特徴
とするものである。Further, in the semiconductor light emitting device of the present invention, the surface of the light quantity correction film is formed to be substantially spherical.
And a radius of curvature (R) of the surface of the light quantity correction film, a maximum thickness ( Tmax ) of the light quantity correction film, and a width (W) of the upper surface of the light emitting element.
And the formula “0.5 ≦ R / W ≦ 1.0, 0.1 ≦ T max / W
≦ 2.0 ”.
【００１１】更に本発明の半導体発光装置は、前記光量
補正膜の屈折率（ｎ）が式「１．５≦ｎ≦１．７」を満
足するように設定されていることを特徴とするものであ
る。Further, the semiconductor light emitting device of the present invention is characterized in that the refractive index (n) of the light quantity correction film is set so as to satisfy the expression "1.5≤n≤1.7". It is.
【００１２】そして本発明の光プリンタヘッドは、上述
の半導体発光装置を回路基板上に複数個、搭載してなる
ことを特徴とするものである。An optical printer head according to the present invention is characterized in that a plurality of the above semiconductor light emitting devices are mounted on a circuit board.
【００１３】本発明によれば、発光素子の上面に透明な
樹脂，ガラスもしくはセラミックスから成る光量補正膜
を被着させるとともに、発光素子の光が通過する光量補
正膜の表面に該発光素子の発光輝度に応じた曲面加工を
施すようにしたことから、各発光素子の光は光量補正膜
の表面に設けられた曲率の大きさに応じて集光され、発
光素子の上方に向かう光の量が均一化される。これによ
り、特殊な電源回路や補正回路等を用いることなく、光
量補正膜表面の曲率を調整するだけで光の強度を全て等
しく揃えることができるようになり、半導体発光装置の
品質を向上させることができるとともに、半導体発光装
置が搭載される光プリンタヘッドの構成を簡素化して生
産性を向上させることが可能となる。According to the present invention, a light quantity correcting film made of transparent resin, glass or ceramic is applied on the upper surface of the light emitting element, and the light emitting element emits light on the surface of the light quantity correcting film through which the light of the light emitting element passes. Since the curved surface processing is performed according to the luminance, the light of each light emitting element is condensed according to the magnitude of the curvature provided on the surface of the light quantity correction film, and the amount of light going upward of the light emitting element is reduced. Be uniformed. This makes it possible to equalize all light intensities simply by adjusting the curvature of the light amount correction film surface without using a special power supply circuit or correction circuit, etc., thereby improving the quality of the semiconductor light emitting device. In addition to this, the configuration of the optical printer head on which the semiconductor light emitting device is mounted can be simplified to improve the productivity.
【００１４】またこの場合、補正データ等を用いた複雑
なデータ処理は不要であることから、データ処理速度を
高く維持することができ、発光素子を高速で発光・駆動
させることも可能となる。In this case, since complicated data processing using correction data or the like is not required, the data processing speed can be maintained high, and the light-emitting element can emit and drive at high speed.
【００１５】更に本発明によれば、前記光量補正膜の表
面を略球面状に形成し、その曲率半径（Ｒ）と最大厚み
（Ｔmax）と発光素子上面の幅（Ｗ）とが式「０．５≦
Ｒ／Ｗ≦１．０、０．１≦Ｔmax／Ｗ≦２．０」を満足
するように設定することにより、発光素子の発する光を
光量補正膜でより効率良く集光させることができるよう
になり、これによって光の強度が飛躍的に向上される。Further, according to the present invention, the surface of the light quantity correction film is formed in a substantially spherical shape, and the radius of curvature (R), the maximum thickness (T max ), and the width (W) of the upper surface of the light emitting element are expressed by the following expression: 0.5 ≦
By setting R / W ≦ 1.0 and 0.1 ≦ Tmax / W ≦ 2.0, the light emitted from the light emitting element can be more efficiently collected by the light amount correction film. As a result, the light intensity is dramatically improved.
【００１６】[0016]
【発明の実施の形態】以下、本発明を添付図面に基づい
て詳細に説明する。図１は本発明の一形態に係る半導体
発光装置の断面図であり、図中の１は基板、２は発光素
子、３は光量補正膜である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to one embodiment of the present invention, in which 1 is a substrate, 2 is a light emitting element, and 3 is a light amount correction film.
【００１７】前記基板１は、単結晶シリコン等から成
り、その上面には複数個の発光素子２や光量補正膜３等
が配設され、これらを支持する支持母材として機能す
る。The substrate 1 is made of single-crystal silicon or the like. A plurality of light-emitting elements 2 and a light-amount correction film 3 are disposed on the upper surface of the substrate 1 and function as a supporting base material for supporting these elements.
【００１８】前記基板１は、単結晶シリコンから成る場
合、まず従来周知のチョコラルスキー法（引き上げ法）
等を採用することによって単結晶シリコンのインゴット
（塊）を形成し、これを所定厚みにスライスした上、表
面を研磨することによって製作される。When the substrate 1 is made of single crystal silicon, first, a conventionally known Czochralski method (pulling method) is used.
By forming an ingot (lump) of single-crystal silicon by adopting the method described above, this is sliced to a predetermined thickness, and then the surface is polished.
【００１９】また前記基板１の上面に設けられている複
数個の発光素子２は、例えば６００ｄｐｉ（dot per in
ch）の密度で直線状に配列されており、これら複数個の
発光素子２によって発光素子アレイを構成している。The plurality of light emitting elements 2 provided on the upper surface of the substrate 1 are, for example, 600 dpi (dot per inch).
The plurality of light emitting elements 2 constitute a light emitting element array.
【００２０】前記発光素子２は、その各々がＧａＡｓや
ＡｌＧａＡｓ,ＡｌＧａＩｎＰ等の化合物半導体から成
り、ｎ型化合物半導体の単結晶薄膜２ａとｐ型化合物半
導体の単結晶薄膜２ｂとを順次積層して、全体構造がメ
サ状（高台状）をなすように形成されている。The light-emitting element 2 is made of a compound semiconductor such as GaAs, AlGaAs, or AlGaInP, and a single-crystal thin film 2a of an n-type compound semiconductor and a single-crystal thin film 2b of a p-type compound semiconductor are sequentially laminated. The entire structure is formed so as to form a mesa shape (a hill shape).
【００２１】これらの発光素子２は、その内部、具体的
にはｎ型化合物半導体２ａとｐ型化合物半導体２ｂとの
境界部にｐｎ接合を有しているため、図示しない電極等
を介して所定の電力が印加されると、ｐ型化合物半導体
２ｂ中に電子が、ｎ型化合物半導体２ａ中に正孔がそれ
ぞれ注入され、これらをｐｎ接合付近で再結合させ、そ
の際に生じたエネルギーを光に変換することによって所
定の波長で発光する。Since these light emitting elements 2 have a pn junction inside, specifically, at the boundary between the n-type compound semiconductor 2a and the p-type compound semiconductor 2b, a predetermined light is applied through electrodes (not shown) or the like. Is applied, electrons are injected into the p-type compound semiconductor 2b, and holes are injected into the n-type compound semiconductor 2a. These are recombined near the pn junction, and the energy generated at that time is converted into light. , And emits light at a predetermined wavelength.
【００２２】尚、前記発光素子２は、従来周知のＭＯＣ
ＶＤ（Metal Organic Chemical Vapor Deposition）法
による２段階成長法及び転位低減法を採用して、基板１
の上面にＡｌＧａＡｓ等からなるｎ型化合物半導体２ａ
とｐ型化合物半導体２ｂとを順次積層し、しかる後、こ
の積層体をメサエッチングすることにより形成される。The light emitting element 2 is a conventional MOC.
The two-step growth method and the dislocation reduction method by the metal organic chemical vapor deposition (VD) method
N-type compound semiconductor 2a made of AlGaAs or the like
And the p-type compound semiconductor 2b are sequentially laminated, and thereafter, the laminate is formed by mesa etching.
【００２３】そして、上述した発光素子２の各上面に
は、光量補正膜３が個々に被着されている。前記光量補
正膜３は、アクリル樹脂やノボラック樹脂、フェノール
樹脂、シリコーン樹脂等の透明（光透過率５０％以上）
な樹脂によって形成されており、該光量補正膜３の表面
のうち、少なくとも発光素子２の発する光が通過する部
位には、発光素子２の発光輝度に応じた曲面加工が施さ
れている。A light amount correction film 3 is individually applied to each upper surface of the light emitting element 2 described above. The light amount correction film 3 is made of a transparent material (light transmittance of 50% or more) made of an acrylic resin, a novolak resin, a phenol resin, a silicone resin, or the like.
And at least a portion of the surface of the light quantity correction film 3 through which light emitted from the light emitting element 2 passes is subjected to a curved surface processing in accordance with the light emission luminance of the light emitting element 2.
【００２４】即ち、前記光量補正膜３の表面は、発光素
子２の発光輝度が低いものほど曲率が小さくなるように
加工されており、例えば、その基準となる発光素子２上
の光量補正膜３は表面を平坦に成し、光の強度を５％向
上させたい場合は、光量補正膜表面の曲率半径が１００
０μｍとなるように曲面加工を施し、光の強度を１０％
向上させたい場合は、光量補正膜表面の曲率半径が５０
０μｍとなるように曲面加工を施す。That is, the surface of the light quantity correction film 3 is processed so that the curvature becomes smaller as the light emission luminance of the light emitting element 2 becomes lower. When the surface is made flat and the light intensity is desired to be improved by 5%, the radius of curvature of the light amount correction film surface is set to 100.
Curve the surface to 0μm and reduce the light intensity to 10%
If it is desired to improve the surface, the radius of curvature of the light amount correction film surface should be 50.
A curved surface processing is performed so as to be 0 μm.
【００２５】このように光量補正膜３の表面を発光素子
２の発光輝度に応じて曲面加工することにより、発光素
子２の光は光量補正膜３の表面に設けられた曲面の曲率
の大きさに応じて集光され、発光素子２の上方に向かう
光の量が均一化される。As described above, the surface of the light quantity correction film 3 is curved in accordance with the light emission luminance of the light emitting element 2 so that the light of the light emitting element 2 has the curvature of the curved surface provided on the surface of the light quantity correction film 3. And the amount of light traveling upward of the light emitting element 2 is made uniform.
【００２６】従って、特殊な電源回路や補正回路等を用
いることなく、光量補正膜表面の曲率を調整するだけで
発光素子２の発光強度が全て等しく揃えられ、半導体発
光装置の品質を向上させることができるとともに、半導
体発光装置が搭載される光プリンタヘッドの構成を簡素
化して、その生産性を向上させることができる。Therefore, the light emission intensity of the light emitting elements 2 can be all equalized by simply adjusting the curvature of the light amount correction film surface without using a special power supply circuit or a correction circuit, etc., thereby improving the quality of the semiconductor light emitting device. In addition, the configuration of the optical printer head on which the semiconductor light emitting device is mounted can be simplified, and the productivity can be improved.
【００２７】またこの場合、補正データ等を用いた複雑
なデータ処理は不要であることから、データ処理速度を
高く維持することができ、発光素子を高速で発光・駆動
させることが可能である。In this case, since complicated data processing using correction data or the like is not required, the data processing speed can be maintained high, and the light emitting element can emit and drive at high speed.
【００２８】更に前記光量補正膜３の表面を全て略球面
状に形成し、該表面の曲率半径（Ｒ）と光量補正膜３の
最大厚み（Ｔmax）と発光素子上面の幅（Ｗ）とが式
「０．５≦Ｒ／Ｗ≦１．０、０．１≦Ｔmax／Ｗ≦２．
０」を満足するように設定しておけば、光量補正膜３で
発光素子２の発する光をより効率良く集光させることが
できるようになり、これによって光の強度を飛躍的に向
上させることが可能となる。従って、光量補正膜３の表
面を全て略球面状に形成し、該表面の曲率半径（Ｒ）と
光量補正膜３の最大厚み（ＴMAX）と発光素子上面の幅
（Ｗ）とが「０．５≦Ｒ／Ｗ≦１．０」及び「０．１≦
Ｔmax／Ｗ≦２．０」の双方を満足するように設定する
ことが好ましい。Further, the entire surface of the light quantity correction film 3 is formed in a substantially spherical shape, and the radius of curvature (R) of the surface, the maximum thickness (T max ) of the light quantity correction film 3 and the width (W) of the upper surface of the light emitting element are determined. Are represented by the formula “0.5 ≦ R / W ≦ 1.0, 0.1 ≦ T max / W ≦ 2.
By setting so as to satisfy “0”, the light emitted from the light emitting element 2 can be more efficiently condensed by the light amount correction film 3, thereby dramatically improving the light intensity. Becomes possible. Therefore, the entire surface of the light quantity correction film 3 is formed in a substantially spherical shape, and the radius of curvature (R) of the surface, the maximum thickness (T MAX ) of the light quantity correction film 3 and the width (W) of the upper surface of the light emitting element are “0”. .5 ≦ R / W ≦ 1.0 ”and“ 0.1 ≦
It is preferable to set both so as to satisfy both of “T max /W≦2.0”.
【００２９】また発光素子２の光を光量補正膜３でもっ
て上述の如く効率良く集光させるには、光量補正膜３の
屈折率ｎを１．５〜１．７の範囲内に設定することが好
ましく、かかる条件を満足する材料としてはノボラック
樹脂等のフェノール樹脂が挙げられる。In order for the light of the light emitting element 2 to be efficiently condensed by the light amount correction film 3 as described above, the refractive index n of the light amount correction film 3 is set in the range of 1.5 to 1.7. It is preferable to use a phenol resin such as a novolak resin as a material satisfying the above conditions.
【００３０】尚、上述した光量補正膜３は、まず発光素
子２の上面に、液状となしたノボラック樹脂等の前駆体
をディスペンサー等を用いて選択的に塗布するととも
に、この液状樹脂を１００℃〜２００℃の温度で加熱・
重合させ、次に発光素子２に所定の電力を印加して発光
素子２を発光させてその輝度を測定し、しかる後、測定
された輝度に応じた所定のレーザー光を光量補正膜３の
表面に照射させて光量補正膜３を軟化・流動させるとと
もに該軟化したノボラック樹脂の表面形状を表面張力に
よって所定の曲面となすことにより形成される。このと
き、光量補正膜３に照射される光の強度、波長、照射時
間、基板温度等は発光素子２の発光輝度に基づいて決定
され、例えば光量補正膜３の表面を平坦な状態から曲率
半径５００μｍの曲面状とするには、基板１の温度を１
３０℃に保持し、照射波長０．４４２μｍ、照射光強度
１０ｍＷのＨｅ−Ｃｄレーザー光を用いる。The light amount correction film 3 is formed by selectively applying a liquid precursor such as a novolak resin to the upper surface of the light emitting element 2 using a dispenser or the like. Heating at a temperature of ~ 200 ° C
Then, a predetermined power is applied to the light-emitting element 2 to cause the light-emitting element 2 to emit light and measure its luminance. Thereafter, a predetermined laser beam corresponding to the measured luminance is applied to the surface of the light quantity correction film 3. To soften and flow the light amount correction film 3 and form the surface of the softened novolak resin into a predetermined curved surface by surface tension. At this time, the intensity, wavelength, irradiation time, substrate temperature, and the like of the light applied to the light quantity correction film 3 are determined based on the light emission luminance of the light emitting element 2, and for example, the surface of the light quantity correction film 3 is changed from a flat state to a radius of curvature. In order to form a curved surface of 500 μm, the temperature of the substrate 1 is set to 1
A He-Cd laser beam having an irradiation wavelength of 0.442 μm and an irradiation light intensity of 10 mW is used while maintaining the temperature at 30 ° C.
【００３１】かくして上述した半導体発光装置は、発光
素子２に所定の電力を印加して発光素子２のｐ型化合物
半導体２ｂ中に電子を、ｎ型化合物半導体２ａ中に正孔
をそれぞれ注入し、これらをｐ型化合物半導体２ｂとｎ
型化合物半導体２ａとの間に形成されるｐｎ接合付近で
再結合させるとともに、その際に生じたエネルギーを光
に変換し、これを光量補正膜３を介して外部へ放出させ
ることによって半導体発光装置として機能する。In the semiconductor light emitting device described above, predetermined power is applied to the light emitting element 2 to inject electrons into the p-type compound semiconductor 2b of the light emitting element 2 and inject holes into the n-type compound semiconductor 2a, respectively. These are p-type compound semiconductors 2b and n
The semiconductor light emitting device is recombined in the vicinity of a pn junction formed with the type compound semiconductor 2a, converts the energy generated at that time into light, and emits the light to the outside via the light amount correction film 3. Function as
【００３２】また上述した半導体発光装置を用いて光プ
リンタヘッドを製作する場合は、図２に示す如く、多数
の回路導体６を有した回路基板４上に、チップ状にカッ
トされた上述の半導体発光装置５を複数個、搭載し、こ
れら半導体発光装置５上にロッドレンズアレイ７を配置
させることによって構成され、半導体発光装置５の発光
素子２を画像データに基づいて個々に選択的に発光させ
るとともに、該発光した光を前記ロッドレンズアレイ７
を介して外部の感光体に照射・結像させ、感光体の表面
に所定の潜像を形成することによって光プリンタヘッド
として機能する。In the case of manufacturing an optical printer head using the above-described semiconductor light emitting device, as shown in FIG. 2, the above-described semiconductor cut into chips is formed on a circuit board 4 having a large number of circuit conductors 6. It is constituted by mounting a plurality of light emitting devices 5 and disposing a rod lens array 7 on these semiconductor light emitting devices 5 to selectively and individually emit light from the light emitting elements 2 of the semiconductor light emitting devices 5 based on image data. At the same time, the emitted light is transmitted to the rod lens array 7.
By irradiating and forming an image on an external photoreceptor via the optical disc, a predetermined latent image is formed on the surface of the photoreceptor, thereby functioning as an optical printer head.
【００３３】尚、本発明は上述の形態に限定されるもの
ではなく、本発明の要旨を逸脱しない範囲において種々
の変更、改良等が可能である。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications and improvements can be made without departing from the spirit of the present invention.
【００３４】例えば、上述の形態においては光量補正膜
３を透明な樹脂により形成するようにしたが、これに代
えてや光量補正膜３を酸化珪素、窒化珪素、酸化チタン
等の透明なセラミックスや透明なガラスを用いて形成す
るようにしても良い。これらの無機質材料で光量補正膜
３を形成する場合、光量補正膜表面の曲面加工は従来周
知のドライエッチング法等によって行われる。For example, in the above-described embodiment, the light amount correction film 3 is formed of a transparent resin, but instead, the light amount correction film 3 may be formed of a transparent ceramic such as silicon oxide, silicon nitride, titanium oxide, or the like. It may be formed using transparent glass. When the light amount correction film 3 is formed of these inorganic materials, the curved surface processing of the light amount correction film surface is performed by a conventionally known dry etching method or the like.
【００３５】また上述の形態においては、発光素子２を
ＧａＡｓやＡｌＧａＡｓ，ＡｌＧａＩｎＰ等ので形成す
るようにしたが、これに代えて、発光素子を例えばＩｎ
ＧａＡｓ，ＩｎＧａＡｓＰやＥＬ（エレクトロルミネッ
センス）材料の有機半導体や無機ＥＬ材料等で形成する
ようにしても構わない。In the above-described embodiment, the light emitting element 2 is made of GaAs, AlGaAs, AlGaInP or the like.
It may be formed of an organic semiconductor such as GaAs, InGaAsP, or an EL (electroluminescence) material, an inorganic EL material, or the like.
【００３６】更に上述の形態においては、発光素子２を
メサ状に形成したが、これに代えて、図３に示す如く、
発光素子２’をプレーナ型としても構わない。Further, in the above embodiment, the light emitting element 2 is formed in a mesa shape, but instead of this, as shown in FIG.
The light emitting element 2 'may be of a planar type.
【００３７】また更に上述の形態においては、光量補正
膜３を発光素子２上に形成する際、液状樹脂をディスペ
ンサ等を用いて発光素子２の上面に選択的に塗布するよ
うにしたが、この液状樹脂として感光性材料を用いるよ
うにすれば、幅１０μｍ〜４０μｍ程度の微小領域に光
量補正膜３を形成するような場合であっても、感光性の
液状樹脂を露光・現像することによって小さな光量補正
膜３を簡単に形成することができる。従って、光量補正
膜３を樹脂により形成する場合、感光性樹脂を用いるこ
とが好ましい。Further, in the above-described embodiment, when the light amount correction film 3 is formed on the light emitting element 2, a liquid resin is selectively applied to the upper surface of the light emitting element 2 using a dispenser or the like. If a photosensitive material is used as the liquid resin, even if the light amount correction film 3 is formed in a minute area having a width of about 10 μm to 40 μm, a small amount can be obtained by exposing and developing the photosensitive liquid resin. The light quantity correction film 3 can be easily formed. Therefore, when the light quantity correction film 3 is formed of a resin, it is preferable to use a photosensitive resin.
【００３８】[0038]
【発明の効果】本発明によれば、発光素子の上面に透明
な樹脂，ガラスもしくはセラミックスから成る光量補正
膜を被着させるとともに、発光素子の光が通過する光量
補正膜の表面に該発光素子の発光輝度に応じた曲面加工
を施すようにしたことから、各発光素子の光は光量補正
膜の表面に設けられた曲率の大きさに応じて集光され、
発光素子の上方に向かう光の量が均一化される。これに
より、特殊な電源回路や補正回路等を用いることなく、
光量補正膜表面の曲率を調整するだけで光の強度を全て
等しく揃えることができるようになり、半導体発光装置
の品質を向上させることができるとともに、半導体発光
装置が搭載される光プリンタヘッドの構成を簡素化して
生産性を向上させることが可能となる。According to the present invention, a light quantity correcting film made of transparent resin, glass or ceramic is applied on the upper surface of the light emitting element, and the light emitting element is provided on the surface of the light quantity correcting film through which the light of the light emitting element passes. Since the curved surface processing is performed according to the emission luminance of the light, the light of each light emitting element is collected according to the magnitude of the curvature provided on the surface of the light amount correction film,
The amount of light traveling upward from the light emitting element is made uniform. As a result, without using a special power supply circuit or correction circuit,
By simply adjusting the curvature of the surface of the light amount correction film, the light intensity can be all equalized, the quality of the semiconductor light emitting device can be improved, and the configuration of the optical printer head on which the semiconductor light emitting device is mounted. Can be simplified and the productivity can be improved.
【００３９】またこの場合、補正データ等を用いた複雑
なデータ処理は不要であることから、データ処理速度を
高く維持することができ、発光素子を高速で発光・駆動
させることが可能である。In this case, since complicated data processing using correction data or the like is not required, the data processing speed can be maintained high, and the light emitting element can emit and drive at high speed.
【００４０】更に本発明によれば、前記光量補正膜の表
面を全て略球面状をなすように形成するとともに、該光
量補正膜表面の曲率半径（Ｒ）と前記光量補正膜の最大
厚み（Ｔmax）と前記発光素子上面の幅（Ｗ）とが式
「０．５≦Ｒ／Ｗ≦１．０、０．１≦Ｔmax／Ｗ≦２．
０」を満足するように設定することにより、発光素子の
発する光は光量補正膜でより効率良く集光させることが
できるようになり、これによって光の強度が飛躍的に向
上される。Further, according to the present invention, the surface of the light quantity correction film is formed to be substantially spherical, and the radius of curvature (R) of the light quantity correction film surface and the maximum thickness (T max) and the light emitting element the upper surface of the width (W) Togashiki "0.5 ≦ R / W ≦ 1.0,0.1 ≦ T max / W ≦ 2.
By setting so as to satisfy “0”, the light emitted from the light emitting element can be more efficiently condensed by the light amount correction film, and thereby the light intensity is dramatically improved.
【図１】本発明の一形態に係る半導体発光装置の断面図
である。FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to one embodiment of the present invention.
【図２】図１の半導体発光装置を用いて構成した光プリ
ンタヘッドの斜視図である。FIG. 2 is a perspective view of an optical printer head configured using the semiconductor light emitting device of FIG.
【図３】本発明の他の形態に係る半導体発光装置の断面
図である。FIG. 3 is a sectional view of a semiconductor light emitting device according to another embodiment of the present invention.
【図４】従来の半導体発光装置の断面図である。FIG. 4 is a sectional view of a conventional semiconductor light emitting device.
１・・・基板、２，２’・・・発光素子、３，３’・・
・光量補正膜、４・・・回路基板、５・・・半導体発光
装置、６・・・回路導体、７・・・ロッドレンズアレイ1 ... substrate, 2,2 '... light-emitting element, 3,3' ...
・ Light amount correction film, 4 ・ ・ ・ Circuit board, 5 ・ ・ ・ Semiconductor light emitting device, 6 ・ ・ ・ Circuit conductor, 7 ・ ・ ・ Rod lens array
Claims (4)
子を複数個、配設させるとともに、これら発光素子の上
面に透明な樹脂、ガラスもしくはセラミックスから成る
光量補正膜を被着させ、前記発光素子の光が通過する光
量補正膜の表面に該発光素子の発光輝度に応じた曲面加
工を施してなる半導体発光装置。1. A light-emitting device comprising a plurality of light-emitting elements comprising a semiconductor thin film disposed on an upper surface of a substrate, and a light-amount correcting film made of a transparent resin, glass or ceramics being deposited on the upper surfaces of these light-emitting elements. A semiconductor light emitting device in which a surface of a light quantity correction film through which light of an element passes is subjected to a curved surface processing in accordance with the emission luminance of the light emitting element.
うに形成されており、かつ該光量補正膜表面の曲率半径
（Ｒ）と前記光量補正膜の最大厚み（Ｔmax）と前記発
光素子上面の幅（Ｗ）とが下記式、を満足するよう
に設定されていることを特徴とする請求項１に記載の半
導体発光装置。 ０．５≦Ｒ／Ｗ≦１．０・・・ ０．１≦Ｔmax／Ｗ≦２．０・・・2. The light amount correction film is formed so that the surface thereof has a substantially spherical shape, and the radius of curvature (R) of the light amount correction film surface, the maximum thickness (T max ) of the light amount correction film, and 2. The semiconductor light emitting device according to claim 1, wherein the width (W) of the upper surface of the light emitting element is set so as to satisfy the following expression. 0.5 ≦ R / W ≦ 1.0 ··· 0.1 ≦ T max /W≦2.0 ···
を満足するように設定されていることを特徴とする請求
項２に記載の半導体発光装置。 １．５≦ｎ≦１．７・・・3. The semiconductor light emitting device according to claim 2, wherein the refractive index (n) of the light quantity correction film is set so as to satisfy the following expression. 1.5 ≦ n ≦ 1.7 ...
半導体発光装置を回路基板上に複数個、搭載してなる光
プリンタヘッド。4. An optical printer head comprising a plurality of semiconductor light emitting devices according to claim 1 mounted on a circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000395993A JP2002198571A (en) | 2000-12-26 | 2000-12-26 | Semiconductor light emitting device and optical printer head using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000395993A JP2002198571A (en) | 2000-12-26 | 2000-12-26 | Semiconductor light emitting device and optical printer head using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002198571A true JP2002198571A (en) | 2002-07-12 |
Family
ID=18861359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000395993A Pending JP2002198571A (en) | 2000-12-26 | 2000-12-26 | Semiconductor light emitting device and optical printer head using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198571A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032448A (en) * | 2004-07-13 | 2006-02-02 | Nippon Sheet Glass Co Ltd | Light-emitting element with lens |
| JP2013049257A (en) * | 2011-08-31 | 2013-03-14 | Fuji Xerox Co Ltd | Light emitting component, print head, and image forming apparatus |
| JP2014086558A (en) * | 2012-10-23 | 2014-05-12 | Fuji Xerox Co Ltd | Light-emitting component, print head and image formation apparatus |
-
2000
- 2000-12-26 JP JP2000395993A patent/JP2002198571A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032448A (en) * | 2004-07-13 | 2006-02-02 | Nippon Sheet Glass Co Ltd | Light-emitting element with lens |
| JP4635494B2 (en) * | 2004-07-13 | 2011-02-23 | 富士ゼロックス株式会社 | Light emitting element with lens |
| JP2013049257A (en) * | 2011-08-31 | 2013-03-14 | Fuji Xerox Co Ltd | Light emitting component, print head, and image forming apparatus |
| JP2014086558A (en) * | 2012-10-23 | 2014-05-12 | Fuji Xerox Co Ltd | Light-emitting component, print head and image formation apparatus |
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