JP2002181774A - Chemical image sensor - Google Patents
Chemical image sensorInfo
- Publication number
- JP2002181774A JP2002181774A JP2000376340A JP2000376340A JP2002181774A JP 2002181774 A JP2002181774 A JP 2002181774A JP 2000376340 A JP2000376340 A JP 2000376340A JP 2000376340 A JP2000376340 A JP 2000376340A JP 2002181774 A JP2002181774 A JP 2002181774A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- substrate
- plate
- rotating
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する分野の説明】 本発明は化学イメージセ
ンサに関するものである。Description of the Field of the Invention The present invention relates to a chemical image sensor.
【０００２】[0002]
【従来の技術の説明】半導体の表面又は裏面よりその禁
制帯幅よりエネルギーのおおきな交流光を照射し、この
とき生じる光電流を測定してセンサに応用する方法は表
面光電圧（ＳＰＶ）法と呼ばれている。図４にその構成
図を示す。この計測方法は、ガスやイオンや生物活性な
どの生物化学検査や半導体製造プロセスにおける結晶欠
陥測定など物理・化学センサとしての応用が考えられて
いる。さらにこのセンサは微小領域のセンサ信号が検出
できるとともに、交流光をスキャニングすることにより
発生するセンサ信号を順次収集して化学種の二次元分布
像を得ることができる。2. Description of the Related Art A method of irradiating AC light having a larger energy than the forbidden band width from the front or back surface of a semiconductor, measuring a photocurrent generated at this time, and applying the photocurrent to a sensor is called a surface photovoltage (SPV) method. Have been. FIG. 4 shows the configuration diagram. This measurement method is considered to be applied as a physical / chemical sensor such as a biochemical test for gas, ions, and biological activities, and a crystal defect measurement in a semiconductor manufacturing process. Further, this sensor can detect a sensor signal in a minute area, and can collect a sensor signal generated by scanning the AC light sequentially to obtain a two-dimensional distribution image of the chemical species.
【０００３】単結晶シリコン基板又は透明なサファイア
基板上の薄膜シリコン層から成るSOS基板の裏面を交流
光で照射することでケミカルイメージセンサが実現する
のに、従来は図５に示すようにセンサを装着したステー
ジをX-Yに移動することによりセンサ基板の裏面全体
に、順次、交流光を照射していたが、システム全体が大
きくなり、結果として高価な装置になっていた。また、
このX-Yステージの移動による光ビーム照射では、ステ
ージがある程度の大きさと重量を持つので開始時と停止
時付近で慣性によりスムーズなステージ移動が困難で位
置情報の誤差を生じ、そのために高精度の計測には不向
きであった。[0003] A chemical image sensor is realized by irradiating the back surface of an SOS substrate composed of a thin film silicon layer on a single crystal silicon substrate or a transparent sapphire substrate with AC light, but conventionally, a sensor as shown in FIG. By moving the mounted stage in the XY direction, the entire back surface of the sensor substrate was sequentially irradiated with AC light. However, the entire system became large, resulting in an expensive device. Also,
In the light beam irradiation by moving the XY stage, because the stage has a certain size and weight, it is difficult to move the stage smoothly due to inertia near the start and stop times, causing errors in position information, resulting in high-precision measurement Was unsuitable for
【０００４】また、ステージ移動の他に図６に示すよう
に二枚のミラーを組み合わせて裏面をX-Yに光ビーム走
査する方法も用いられている。しかし、この方法も機械
的な方法なのでミラーを滑らかに動かすには複雑な操作
が必要で、また高速に動作させるには限界があった。In addition to the stage movement, there is also used a method of combining two mirrors and scanning the back surface with XY light beams as shown in FIG. However, since this method is also a mechanical method, a complicated operation is required to move the mirror smoothly, and there is a limit in operating the mirror at high speed.
【０００５】[0005]
【発明が解決すべき課題】本発明は上記の欠点を解決
し、ケミカルイメージセンサの信号処理の高速化と装置
の小型化を実現し安価なセンサ計測装置を提供すること
である。SUMMARY OF THE INVENTION It is an object of the present invention to provide an inexpensive sensor measuring apparatus which solves the above-mentioned drawbacks, realizes a high-speed signal processing of a chemical image sensor and realizes a compact apparatus.
【０００６】[0006]
【課題を解決する手段】上記課題を解決するための請求
項１の発明は、半導体の表面光電圧法（surfacephoto v
oltage: SPV）を用いた光アドレス電位応答センサ（LAP
S: Light addressable potentiometric sensor）及び化
学イメージセンサに於いて、半導体基板を用いて上記板
状基板を回転させて同心円状に交流光ビームを照射する
と共に、回転する同心円の直径方向の任意の位置に交流
光ビームを移動させることにより上記基板上のセンサ全
面の化学種の二次元像を得ることが出来るようなセンサ
構成で、多角形板状または円板状の半導体基板を用いて
同一平面上に化学種の感応部と参照電極と対極を設け
て、さらにこれらを電解質材料で被うことで構成される
ことを特徴とする。According to a first aspect of the present invention, there is provided a semiconductor device having a surface photovoltage method.
oltage: SPV) using photo-addressed potential response sensor (LAP)
In S: Light addressable potentiometric sensors and chemical image sensors, the above-mentioned plate-shaped substrate is rotated using a semiconductor substrate to irradiate an AC light beam concentrically, and at any position in the diameter direction of the rotating concentric circle. A sensor configuration that can obtain a two-dimensional image of the chemical species on the entire surface of the sensor on the substrate by moving the AC light beam, using a polygonal plate-shaped or disk-shaped semiconductor substrate on the same plane It is characterized in that a sensitive part of a chemical species, a reference electrode and a counter electrode are provided, and these are covered with an electrolyte material.
【０００７】[0007]
【実施の態様】本発明は、半導体基板の表面上に絶縁層
を有する構造で、上記半導体の表面または裏面より交流
光を照射することにより半導体表面の局所状態を検知で
きる表面光電圧法を用いた化学イメージセンサに於い
て、センサ基板は多角形板状または円板状の半導体基板
を用いて、この基板の全面を交流光で走査するのに、セ
ンサが装着されているX-Yステージを移動させて行う方
法ではなく上記基板を回転させることにより実現するの
が本発明の趣旨である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention has a structure having an insulating layer on the surface of a semiconductor substrate, and uses a surface photovoltage method capable of detecting a local state of the semiconductor surface by irradiating AC light from the front or back surface of the semiconductor. In a chemical image sensor, a sensor substrate is a polygonal or disk-shaped semiconductor substrate.To scan the entire surface of the substrate with AC light, the XY stage on which the sensor is mounted is moved. It is the gist of the present invention that the above method is realized by rotating the substrate instead of the method.
【０００８】図１に示すように、本発明の化学イメージ
センサの構成法は、ディスク状の半導体基板上に化学種
のセンサ部と参照電極と対極を設けたセンサ基板の中心
部を回転軸のスピンドルにハブで圧着させて上記基板を
回転させて交流光を同心円状に照射すると共に、交流光
を上記ディスク状基板の直径方向にその位置を移動させ
ることにより、センサ基板の全面における信号を順次読
み出し化学種の二次元像得ることができるものである。
本発明のディスク状センサ基板の直径方向へ移動を正確
に行うために、レーザー光源、ビームスプリッター、対
物レンズなどから成る交流光の照射機能はCDROMと同様
な機構つまり位置決め機構に固定させたアーム上に取り
付けられている。交流光は光源からの交流光ビーム径を
対物レンズで小さく絞って基板上の半導体層に焦点を合
われことにより高い空間分解能を達成できる。As shown in FIG. 1, in the method of constructing a chemical image sensor according to the present invention, a center part of a sensor substrate having a sensor part of a chemical species, a reference electrode and a counter electrode provided on a disk-shaped semiconductor substrate is defined by a rotation axis. By pressing the hub onto a spindle and rotating the substrate to irradiate the concentric circles with the AC light, and moving the AC light in the diameter direction of the disc-shaped substrate, the signal on the entire surface of the sensor substrate is sequentially transmitted. A two-dimensional image of the read species can be obtained.
In order to accurately move the disk-shaped sensor substrate in the diameter direction of the present invention, the irradiation function of AC light composed of a laser light source, a beam splitter, an objective lens, and the like is provided on an arm fixed to a mechanism similar to a CDROM, that is, a positioning mechanism. Attached to. The AC light can achieve a high spatial resolution by focusing on the semiconductor layer on the substrate by narrowing down the diameter of the AC light beam from the light source with an objective lens.
【０００９】図２は上記の板状半導体基板を回転させる
のに、板状のケースに上記の板状半導体基板を一体に収
納した場合である。プラスッチックで成型したケースに
板状センサを収納することにより、電解質材料を本セン
サの感応部に様々な形状に被着することができる。ま
た、測定はセンシング部と対極部と参照電極部がゲルな
どの電解質で被われた膜上に測定サンプル溶液を滴下し
て行う。ゲル状材料を電解質に用いた場合はゲル状電解
質膜上に測定サンプル溶液を滴下することで化学種がゲ
ルに浸透しセンサ応答膜上で局在的にセンサ信号の面内
分布に変化をもたらすことにより化学イメージセンサを
実現できる。FIG. 2 shows a case where the plate-shaped semiconductor substrate is integrally accommodated in a plate-shaped case for rotating the plate-shaped semiconductor substrate. By housing the plate-shaped sensor in a plastic molded case, the electrolyte material can be applied to the sensitive portion of the sensor in various shapes. The measurement is performed by dropping a measurement sample solution on a film in which the sensing unit, the counter electrode unit, and the reference electrode unit are covered with an electrolyte such as a gel. When a gel-like material is used for the electrolyte, the chemical species permeates the gel by dropping the measurement sample solution onto the gel-like electrolyte membrane and locally changes the sensor signal in-plane distribution on the sensor response membrane. Thereby, a chemical image sensor can be realized.
【００１０】図３は板状センサ基板からのセンサ信号の
取り出し及び参照電極と対極の外部の電気回路との接続
法の例を示している。上記回転軸のスピンドルと上部の
ハブにディスク状基板が圧着されることによりモーター
の回転によりセンサ基板が回転子、上記のスピンドルに
圧着された回転センサ板はハブにより圧着または解除す
ることにより着脱可能な構成となる。FIG. 3 shows an example of a method of extracting a sensor signal from a plate-like sensor substrate and connecting a reference electrode to an electric circuit outside the counter electrode. The disc substrate is pressed against the spindle of the rotating shaft and the upper hub, and the sensor substrate is rotated by the rotation of the motor, and the rotation sensor plate pressed against the spindle is detachable by pressing or releasing by the hub. Configuration.
【００１１】上記回転軸のスピンドルと上部のハブにデ
ィスク状基板が圧着される場合、上記板状のセンサ基板
を回転させると同時に上記板状センサ基板からのセンサ
信号電極及び参照電極と対極の電気配線をスピンドル部
かハブかの回転機構に一体に組み込む。センサ信号の取
り出し及び参照電極と対極の各々はセンサ基板の上面に
配置され上方からハブで押さえられている構成なので、
外部電気回路とを接続させるには本例のようにハブの一
部に電気配線と接続部を設けて接触子で接触させるのが
好都合である。When the disk-shaped substrate is pressed against the spindle of the rotating shaft and the upper hub, the plate-shaped sensor substrate is rotated and at the same time, the sensor signal electrode and the reference electrode from the plate-shaped sensor substrate are electrically connected to the counter electrode. The wiring is integrated into the rotating mechanism of the spindle or the hub. Each of the extraction of the sensor signal and the reference electrode and the counter electrode are arranged on the upper surface of the sensor board and are pressed from above by a hub,
In order to connect with an external electric circuit, it is convenient to provide an electric wiring and a connecting portion in a part of the hub and to make contact with a contact as in this example.
【００１２】[0012]
【効果の説明】従来のセンサを装着したX-Yステージの
移動による光ビーム照射では、スムーズなステージ移動
が困難であったが、本発明によれば、センサ基板を一定
速度で回転させると同時に光源を回転軸方向に前後移動
させることで規則的な速度でセンサ全体をスムーズに照
射することが出来る。また、光ビームの光源の移動は高
速を必要とせず、直線的な低速移動で構わないので光ビ
ームを移動させながらもそのビームの焦点を正確に絞る
ことができるようになるので高精度計測には大変有用で
ある。さらに本発明によれば、センサの計測速度を向上
させるには、センサ基板の回転数に上げることにより簡
単に実現できるのでその効果は大である。[Explanation of effect] It has been difficult to smoothly move the stage by the light beam irradiation by moving the XY stage equipped with the conventional sensor. However, according to the present invention, the light source is simultaneously rotated while rotating the sensor substrate at a constant speed. By moving the sensor forward and backward in the direction of the rotation axis, the entire sensor can be smoothly irradiated at a regular speed. In addition, the movement of the light source of the light beam does not require high speed, and may be a linear low-speed movement.Thus, it is possible to accurately focus the beam while moving the light beam. Is very useful. Further, according to the present invention, the measurement speed of the sensor can be easily increased by increasing the rotation speed of the sensor substrate, so that the effect is great.
【図１】本発明のケミカルイメージセンサの基本構成FIG. 1 is a basic configuration of a chemical image sensor of the present invention.
【図２】本発明のセンサ基板を板状ケースに一体に収納
した例FIG. 2 shows an example in which the sensor substrate of the present invention is housed integrally in a plate-like case.
【図３】本発明のセンサ信号及び参照電極と対極の外部
の電気回路との接続法の例FIG. 3 shows an example of a method for connecting the sensor signal and reference electrode of the present invention to an electric circuit outside the counter electrode.
【図４】表面光電圧を用いたケミカルイメージセンサの
原理図FIG. 4 is a principle diagram of a chemical image sensor using a surface light voltage.
【図５】従来のX-Yステージ移動による交流光の照射法FIG. 5 shows a conventional method of irradiating AC light by moving an X-Y stage.
【図６】従来のミラーの組み合わせによる交流光の照射
法FIG. 6 shows a conventional AC light irradiation method using a combination of mirrors.
１：半導体基板 ２：絶縁膜 ３：感応膜 ４：電解質 ５：交流光ビーム ６：ケース ７：参照電極 ８：対極 1: semiconductor substrate 2: insulating film 3: sensitive film 4: electrolyte 5: AC light beam 6: case 7: reference electrode 8: counter electrode
Claims (3)
ltage: SPV）を用いた光アドレス電位応答センサ（LAP
S: Light addressable potentiometric sensor）及び化
学イメージセンサに於いて、半導体基板を用いて上記板
状基板を回転させて同心円状に交流光ビームを照射する
と共に、回転する同心円の直径方向の任意の位置に交流
光ビームを移動させることにより上記基板上のセンサ全
面の化学種の二次元像を得ることが出来るようなセンサ
構成で、多角形板状または円板状の半導体基板を用いて
同一平面上に化学種の感応部と参照電極と対極を設け
て、さらにこれらを電解質材料で被うことで構成される
ことを特徴とする化学イメージセンサ。1. The method of claim 1, wherein the surface photovoltaic method is used for a semiconductor.
ltage: SPV) optical address potential response sensor (LAP
In S: Light addressable potentiometric sensors and chemical image sensors, the above-mentioned plate-shaped substrate is rotated using a semiconductor substrate to irradiate an AC light beam concentrically, and at any position in the diameter direction of the rotating concentric circle. A sensor configuration that can obtain a two-dimensional image of the chemical species on the entire surface of the sensor on the substrate by moving the AC light beam, using a polygonal plate-shaped or disk-shaped semiconductor substrate on the same plane A chemical image sensor comprising a sensitive part of a chemical species, a reference electrode and a counter electrode, and further covering these with an electrolyte material.
板状のケースに上記の板状半導体基板を一体に収納した
ことを特徴とする請求項１の化学イメージセンサ。2. The method according to claim 1, further comprising rotating the plate-shaped semiconductor substrate.
2. The chemical image sensor according to claim 1, wherein said plate-shaped semiconductor substrate is integrally housed in a plate-shaped case.
に、回転軸と一体に組み込みんだ電気配線により上記板
状センサ基板からのセンサ信号の取り出し及び参照電極
と対極の各々を、回転機構の一部に設けられた外部電気
回路に通じる接続部分に接触させることにより外部電気
回路とを接続させることを特徴とする請求項１又は請求
項２の化学イメージセンサ。3. Rotating the plate-like sensor substrate, extracting a sensor signal from the plate-like sensor substrate by electric wiring integrated with a rotating shaft, and rotating each of the reference electrode and the counter electrode by a rotating mechanism. The chemical image sensor according to claim 1 or 2, wherein the chemical image sensor is connected to an external electric circuit by contacting a connection portion provided in a part of the device and communicating with the external electric circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000376340A JP4334135B2 (en) | 2000-12-11 | 2000-12-11 | Chemical image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000376340A JP4334135B2 (en) | 2000-12-11 | 2000-12-11 | Chemical image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002181774A true JP2002181774A (en) | 2002-06-26 |
| JP4334135B2 JP4334135B2 (en) | 2009-09-30 |
Family
ID=18845212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000376340A Expired - Fee Related JP4334135B2 (en) | 2000-12-11 | 2000-12-11 | Chemical image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4334135B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008111854A (en) * | 2008-01-24 | 2008-05-15 | Toshiba Corp | Molecule recognition sensor |
| JP2008151801A (en) * | 2008-01-24 | 2008-07-03 | Toshiba Corp | Molecular recognition sensor |
| CN112666243A (en) * | 2020-11-30 | 2021-04-16 | 西安交通大学 | Optical addressing square wave/alternating current volt-ampere electrochemical sensing system and method |
-
2000
- 2000-12-11 JP JP2000376340A patent/JP4334135B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008111854A (en) * | 2008-01-24 | 2008-05-15 | Toshiba Corp | Molecule recognition sensor |
| JP2008151801A (en) * | 2008-01-24 | 2008-07-03 | Toshiba Corp | Molecular recognition sensor |
| CN112666243A (en) * | 2020-11-30 | 2021-04-16 | 西安交通大学 | Optical addressing square wave/alternating current volt-ampere electrochemical sensing system and method |
| CN112666243B (en) * | 2020-11-30 | 2023-09-05 | 西安交通大学 | Light addressing square wave/alternating current volt-ampere electrochemical sensing system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4334135B2 (en) | 2009-09-30 |
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