JP2002173397A - Hexagonal oxide magnetic film and method of producing the same - Google Patents
Hexagonal oxide magnetic film and method of producing the sameInfo
- Publication number
- JP2002173397A JP2002173397A JP2000370528A JP2000370528A JP2002173397A JP 2002173397 A JP2002173397 A JP 2002173397A JP 2000370528 A JP2000370528 A JP 2000370528A JP 2000370528 A JP2000370528 A JP 2000370528A JP 2002173397 A JP2002173397 A JP 2002173397A
- Authority
- JP
- Japan
- Prior art keywords
- hexagonal oxide
- film
- hexagonal
- oxide magnetic
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は六方晶系酸化物磁
性体膜およびその製造方法に関し、特にたとえば電子部
品に用いられる六方晶系酸化物磁性体膜およびその製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hexagonal oxide magnetic film and a method for producing the same, and more particularly, to a hexagonal oxide magnetic film used for electronic components and a method for producing the same.
【０００２】[0002]
【従来の技術】近年、電子機器の高周波化に伴い、電子
部品もより高周波で動作するものが要望されている。従
来、六方晶系酸化物磁性体膜は数ＧＨｚ〜数十ＧＨｚで
動作することがわかっており、その作製は、Ｈ．Ｌ．Ｇ
ｌａｓｓら（Ｍａｔ．Ｒｅｓ．Ｂｕｌｌ．１１（１９７
６）１３１９−１３２６）によって、ＭｇＧａ2 Ｏ4 や
ＭｇＡｌ2 Ｏ 4 などのスピネル構造を持った酸化物単結
晶基板上にＰｂＯ系フラックスを用いて液相エピタキシ
ャル成長方法（ＬＰＥ法）によるものが示されていた。2. Description of the Related Art In recent years, with the increase in frequency of electronic devices,
There is a demand for components that operate at higher frequencies. Subordinate
Hexagonal oxide magnetic films have been used
It is known to work, and its fabrication is described in L. G
las et al. (Mat. Res. Bull.11(197
6) According to 1319-1326), MgGaTwo OFourAnd
MgAlTwoO FourSingle oxide with spinel structure such as
Phase epitaxy using PbO-based flux on crystalline substrates
In this case, the method according to the conventional growth method (LPE method) was shown.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
作製方法では、ＭｇＡｌ2 Ｏ4 などのスピネル構造の基
板に、たとえばスピネル構造であるＺｎＦｅ2 Ｏ4 を形
成できる成分を含んだ六方晶系酸化物磁性体膜ＢａＺｎ
Ｆｅ6 Ｏ11を直接作製すると、スピネル構造であるＺｎ
Ｆｅ2 Ｏ4 構造の酸化物磁性体が異相として析出し、目
的の六方晶系酸化物磁性体膜ＢａＺｎＦｅ6 Ｏ11を単相
で作製することが困難であった。However, in the conventional manufacturing method, a hexagonal oxide containing a component capable of forming, for example, ZnFe 2 O 4 having a spinel structure is formed on a substrate having a spinel structure such as MgAl 2 O 4 . Magnetic film BaZn
When Fe 6 O 11 is directly produced, Zn having a spinel structure is obtained.
The oxide magnetic material having the Fe 2 O 4 structure was precipitated as a different phase, and it was difficult to produce the desired hexagonal oxide magnetic material film BaZnFe 6 O 11 in a single phase.
【０００４】それゆえに、この発明の主たる目的は、ス
ピネル構造の酸化物磁性体が異相として析出することな
く製造することができる、六方晶系酸化物磁性体膜を提
供することである。この発明の他の目的は、スピネル構
造の酸化物磁性体が異相として析出することなく六方晶
系酸化物磁性体膜を製造することができる、六方晶系酸
化物磁性体膜の製造方法を提供することである。[0004] Therefore, a main object of the present invention is to provide a hexagonal oxide magnetic film which can be manufactured without depositing a spinel-structured oxide magnetic material as a different phase. Another object of the present invention is to provide a method for producing a hexagonal oxide magnetic film, which can produce a hexagonal oxide magnetic film without depositing a spinel-structured oxide magnetic material as a different phase. It is to be.
【０００５】[0005]
【課題を解決するための手段】この発明にかかる六方晶
系酸化物磁性体膜は、スピネル構造の基板上に、スピネ
ル構造を形成できる成分を含まない六方晶系酸化物膜が
形成され、その六方晶系酸化物膜の上に形成されること
を特徴とする、六方晶系酸化物磁性体膜である。この発
明にかかる六方晶系酸化物磁性体膜では、たとえば、ス
ピネル構造を形成できる成分を含まない六方晶系酸化物
膜が、Ｍｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、Ｌｉ、Ｖ
より選ばれる１種以上の元素を含まない六方晶系酸化物
膜である。また、この発明にかかる六方晶系酸化物磁性
体膜では、たとえば、スピネル構造の基板が、ＡＢ2 Ｏ
4 （ただし、ＡはＺｎ、Ｍｇより選ばれる１種以上の元
素、かつ、ＢはＩｎ、Ｇａ、Ａｌより選ばれる１種以上
の元素）である。さらに、この発明にかかる六方晶系酸
化物磁性体膜では、たとえば、スピネル構造を形成でき
る成分を含まない六方晶系酸化物膜が、ＣＦｅ12Ｏ
19（ただし、ＣはＢａ、Ｓｒ、Ｃａ、Ｐｂより選ばれる
１種以上の元素）である。この発明にかかる六方晶系酸
化物磁性体膜の製造方法は、スピネル構造の基板上に、
スピネル構造を形成できる成分を含まない六方晶系酸化
物膜を形成した後、その六方晶系酸化物膜の上に六方晶
系酸化物磁性体膜を形成することを特徴とする、六方晶
系酸化物磁性体膜の製造方法である。この発明にかかる
六方晶系酸化物磁性体膜の製造方法では、たとえば、ス
ピネル構造を形成できる成分を含まない六方晶系酸化物
膜が、Ｍｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、Ｌｉ、Ｖ
より選ばれる１種以上の元素を含まない六方晶系酸化物
膜である。また、この発明にかかる六方晶系酸化物磁性
体膜の製造方法では、たとえば、スピネル構造の基板
が、ＡＢ2 Ｏ4 （ただし、ＡはＺｎ、Ｍｇより選ばれる
１種以上の元素、およびＢはＩｎ、Ｇａ、Ａｌより選ば
れる１種以上の元素）である。さらに、この発明にかか
る六方晶系酸化物磁性体膜の製造方法では、たとえば、
スピネル構造を形成できる成分を含まない六方晶系酸化
物膜が、ＣＦｅ12Ｏ19（ただし、ＣはＢａ、Ｓｒ、Ｃ
ａ、Ｐｂより選ばれる１種以上の元素）である。また、
この発明にかかる六方晶系酸化物磁性体膜の製造方法で
は、たとえば、六方晶系酸化物膜の形成方法および六方
晶系酸化物磁性体膜の形成方法が、液相エピタキシャル
成長法、レーザーアブレーション法、スパッタ法および
化学蒸着法のうち少なくとも１種である。According to the present invention, a hexagonal oxide magnetic film according to the present invention comprises a substrate having a spinel structure and a hexagonal oxide film containing no component capable of forming a spinel structure. A hexagonal oxide magnetic film formed on the hexagonal oxide film. In the hexagonal oxide magnetic film according to the present invention, for example, a hexagonal oxide film containing no component capable of forming a spinel structure is formed of Mn, Zn, Co, Ni, Mg, Cr, Li, V
It is a hexagonal oxide film not containing one or more elements selected from the group consisting of: In the hexagonal oxide magnetic film according to the present invention, for example, a substrate having a spinel structure is made of AB 2 O.
4 (where A is one or more elements selected from Zn and Mg, and B is one or more elements selected from In, Ga and Al). Further, in the hexagonal oxide magnetic film according to the present invention, for example, a hexagonal oxide film containing no component capable of forming a spinel structure may be CFe 12 O
19 (where C is one or more elements selected from Ba, Sr, Ca, and Pb). The method for producing a hexagonal oxide magnetic film according to the present invention includes the steps of:
Forming a hexagonal oxide film containing no component capable of forming a spinel structure, and then forming a hexagonal oxide magnetic material film on the hexagonal oxide film; This is a method for producing an oxide magnetic film. In the method for producing a hexagonal oxide magnetic film according to the present invention, for example, a hexagonal oxide film containing no component capable of forming a spinel structure is formed of Mn, Zn, Co, Ni, Mg, Cr, Li, V
It is a hexagonal oxide film not containing one or more elements selected from the group consisting of: In the method for producing a hexagonal oxide magnetic film according to the present invention, for example, a substrate having a spinel structure is made of AB 2 O 4 (where A is at least one element selected from Zn and Mg, and B Is one or more elements selected from In, Ga, and Al). Further, in the method for producing a hexagonal oxide magnetic film according to the present invention, for example,
A hexagonal oxide film containing no component capable of forming a spinel structure is CFe 12 O 19 (where C is Ba, Sr, C
a, one or more elements selected from Pb). Also,
In the method for manufacturing a hexagonal oxide magnetic film according to the present invention, for example, a method for forming a hexagonal oxide magnetic film and a method for forming a hexagonal oxide magnetic film include a liquid phase epitaxial growth method and a laser ablation method. , Sputtering, and chemical vapor deposition.
【０００６】スピネル構造の基板上に、スピネル構造を
形成できる成分を含まない六方晶系酸化物膜を形成した
後、その六方晶系酸化物膜の上に六方晶系酸化物磁性体
膜を形成することによって、目的とする六方晶系酸化物
磁性体膜を異相の析出なしに製造することができる。つ
まり、たとえば、スピネル構造の基板ＡＢ2 Ｏ4 （ただ
し、ＡはＺｎ、Ｍｇより選ばれる１種以上の元素、か
つ、ＢはＩｎ、Ｇａ、Ａｌより選ばれる１種以上の元
素）上に、スピネル構造を形成できる成分（Ｍｎ、Ｚ
ｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、Ｌｉ、Ｖより選ばれる１
種以上の元素）を含まない六方晶系酸化物膜を、液相エ
ピタキシャル成長法、レーザーアブレーション法、スパ
ッタ法および化学蒸着法などで形成した後、その六方晶
系酸化物膜の上に液相エピキタシャル成長法、レーザー
アブレーション法、スパッタ法および化学蒸着法などで
六方晶系酸化物磁性体膜を形成することによって、目的
とする六方晶系酸化物磁性体膜を異相の析出なしに製造
することができる。After forming a hexagonal oxide film containing no component capable of forming a spinel structure on a substrate having a spinel structure, a hexagonal oxide magnetic film is formed on the hexagonal oxide film. By doing so, the desired hexagonal oxide magnetic film can be manufactured without depositing a different phase. That is, for example, on a spinel structure substrate AB 2 O 4 (where A is at least one element selected from Zn and Mg, and B is at least one element selected from In, Ga, and Al) Components capable of forming a spinel structure (Mn, Z
1 selected from n, Co, Ni, Mg, Cr, Li, and V
After forming a hexagonal oxide film containing no more than one element by liquid phase epitaxial growth, laser ablation, sputtering, or chemical vapor deposition, liquid phase epitaxy is formed on the hexagonal oxide. By forming a hexagonal oxide magnetic film by a growth method, a laser ablation method, a sputtering method, a chemical vapor deposition method, etc., it is possible to produce a desired hexagonal oxide magnetic film without depositing a different phase. it can.
【０００７】この発明の上述の目的、その他の目的、特
徴および利点は、以下の発明の実施の形態の詳細な説明
から一層明らかとなろう。[0007] The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments of the present invention.
【０００８】[0008]
【実施例】ＭｇＡｌ2 Ｏ4 基板を、液相エピタキシャル
成長法でＭｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、Ｌｉ、
Ｖより選ばれる１種以上の元素を含まない六方晶系酸化
物膜としてＢａＦｅ12Ｏ19膜を形成するための基板とし
た。次に、原料である純度９９．９９％のＢａＣＯ3 、
ＰｂＯ、Ｆｅ2 Ｏ3 、Ｂ2 Ｏ3 を３５．４、３０．７、
１４．０、１９．９ｍｏｌ％の比で秤量し混合した後、
縦型電気炉内に保持された白金坩堝に充填し、１２００
℃で均質化を行い融液化した。この融液を約９１０℃の
一定温度に保持して過飽和状態にした後、この融液中に
ＭｇＡｌ2 Ｏ 4 基板を浸漬し、回転させながら約１０分
間成長を行って膜を形成した。その後、このＭｇＡｌ2
Ｏ4 基板を融液から引き上げ、５００ｒｐｍで回転させ
て、形成した膜上に付着した融液を遠心力で振り切るこ
とによって、厚み約２μｍの膜を形成した。その後、得
られた膜はＸ線回折でＢａＦｅ12Ｏ19膜であることを確
認した。さらに、ＢａＦｅ12Ｏ19膜付きのＭｇＡｌ2 Ｏ
4 基板を、２回目の液相エピタキシャル成長法で目的の
六方晶系酸化物磁性体膜であるＢａＺｎＦｅ6 Ｏ11膜を
形成するための基板とした。次に、原料である純度９
９．９９％のＢａＣＯ3 、ＰｂＯ、ＺｎＯ、Ｆｅ2 Ｏ
3 、Ｂ2 Ｏ3 を３０．８、３０．７、４．６、１４．
０、１９．９ｍｏｌ％の比で秤量し、すべての原料を混
合した後、縦型電気炉内に保持された白金坩堝に充填
し、１２００℃で均質化を行い融液化した。この融液を
約９００℃に保持して過飽和状態にした後、この融液中
にＢａＦｅ12Ｏ19膜付きのＭｇＡｌ2 Ｏ4 基板を浸漬
し、回転させながら約１時間成長を行って膜を形成し
た。その後、このＢａＦｅ12Ｏ19膜付きのＭｇＡｌ2 Ｏ
4 基板を融液から引き上げ、５００ｒｐｍで回転させ
て、形成した膜上に付着した融液を遠心力で振り切るこ
とによって、厚み約１５μｍの膜を形成した。得られた
膜はＸ線回折でＢａＺｎＦｅ6 Ｏ11膜であることを確認
した。[Example] MgAlTwo OFour Substrate, liquid phase epitaxial
Mn, Zn, Co, Ni, Mg, Cr, Li,
Hexagonal oxidation not containing one or more elements selected from V
BaFe as a material film12O19Used as a substrate for forming a film
Was. Next, the raw material BaCO having a purity of 99.99% is used.Three ,
PbO, FeTwo OThree , BTwo OThree To 35.4, 30.7,
After weighing and mixing at a ratio of 14.0 and 19.9 mol%,
Filled into a platinum crucible held in a vertical electric furnace,
It homogenized at ℃ and made it a melt. About 910 ° C.
After maintaining the temperature at a constant temperature to make it supersaturated,
MgAlTwo O Four Immerse the substrate and rotate it for about 10 minutes
A film was formed by performing inter-growth. Then, this MgAlTwo
OFour The substrate is lifted from the melt and rotated at 500 rpm
And shake off the melt adhering to the formed film by centrifugal force.
As a result, a film having a thickness of about 2 μm was formed. Then get
The obtained film was BaFe by X-ray diffraction.12O19Make sure it is a membrane
I accepted. Furthermore, BaFe12O19MgAl with filmTwo O
Four Substrate is subjected to the second liquid phase epitaxial growth
BaZnFe which is a hexagonal oxide magnetic film6 O11Membrane
A substrate to be formed. Next, the raw material purity 9
9.99% BaCOThree , PbO, ZnO, FeTwo O
Three , BTwo OThree 30.8, 30.7, 4.6, 14.
0, 19.9 mol%, and mix all raw materials.
After filling, fill the platinum crucible held in the vertical electric furnace
The mixture was homogenized at 1200 ° C. and melted. This melt
After maintaining at about 900 ° C. to make it supersaturated,
BaFe12O19MgAl with filmTwo OFour Immerse the substrate
And grow for about 1 hour while rotating to form a film
Was. Then, this BaFe12O19MgAl with filmTwo O
Four The substrate is lifted from the melt and rotated at 500 rpm
To remove the melt adhering to the formed film by centrifugal force.
As a result, a film having a thickness of about 15 μm was formed. Got
The film is BaZnFe by X-ray diffraction.6 O11Confirm that it is a membrane
did.
【０００９】[0009]
【比較例】ＭｇＡｌ2 Ｏ4 基板を、液相エピタキシャル
成長法で六方晶系酸化物磁性体膜であるＢａＺｎＦｅ6
Ｏ11膜を形成するための基板とした。次に、原料である
純度９９．９９％のＢａＣＯ3 、ＰｂＯ、ＺｎＯ、Ｆｅ
2 Ｏ3 、Ｂ2 Ｏ3 を３０．８、３０．７、４．６、１
４．０、１９．９ｍｏｌ％の比で秤量し、すべての原料
を混合した後、縦型電気炉内に保持された白金坩堝に充
墳し、１２００℃で均質化を行い融液化した。この融液
を約９００℃に保持して過飽和状態にした後、この融液
中にＭｇＡｌ2 Ｏ4 基板を浸漬し、回転させながら約１
時間成長を行って膜を形成した。その後、このＭｇＡｌ
2 Ｏ4 基板を融液から引き上げ、５００ｒｐｍで回転さ
せて、形成した膜上に付着した融液を遠心力で振り切る
ことによって、厚み約１５μｍの膜を形成した。得られ
た膜は、形成物をＸ線回折で同定した結果、ＺｎＦｅ2
Ｏ4 とＢａＦｅ12Ｏ19とＢａＺｎＦｅ6 Ｏ11とであるこ
とを確認した。COMPARATIVE EXAMPLE A MgAl 2 O 4 substrate was subjected to liquid phase epitaxial growth to form a hexagonal oxide magnetic film BaZnFe 6.
A substrate for forming an O 11 film was used. Next, raw materials such as BaCO 3 , PbO, ZnO, Fe
The 2 O 3, B 2 O 3 30.8,30.7,4.6,1
After weighing at a ratio of 4.0 to 19.9 mol% and mixing all the raw materials, the mixture was charged into a platinum crucible held in a vertical electric furnace, and homogenized at 1200 ° C. to be melted. After maintaining the melt at about 900 ° C. to make it supersaturated, the MgAl 2 O 4 substrate is immersed in the melt and rotated for about 1 hour.
A film was formed by performing time growth. Then, this MgAl
The 2 O 4 substrate was pulled up from the melt, rotated at 500 rpm, and the melt adhered on the formed film was shaken off by centrifugal force to form a film having a thickness of about 15 μm. As a result of identifying the formed product by X-ray diffraction, the obtained film showed ZnFe 2
It was confirmed that they were O 4 , BaFe 12 O 19 and BaZnFe 6 O 11 .
【００１０】なお、上述の実施例では六方晶系酸化物膜
の形成方法および六方晶系酸化物磁性体膜の形成方法が
液相エピタキシャル成長法である場合について説明した
が、六方晶系酸化物膜の形成方法および六方晶系酸化物
磁性体膜の形成方法がレーザーアブレーション法、スパ
ッタ法、化学蒸着法などの方法である場合においても同
様の効果が得られる。In the above-described embodiment, the case where the method for forming the hexagonal oxide film and the method for forming the hexagonal oxide magnetic film are liquid phase epitaxial growth methods has been described. The same effect can be obtained when the method of forming a hexagonal oxide magnetic film is a method such as a laser ablation method, a sputtering method, or a chemical vapor deposition method.
【００１１】また、上述の実施例ではスピネル構造の基
板がＭｇＡｌ2 Ｏ4 基板である場合について説明した
が、その他のスピネル構造の基板である場合においても
同様の効果が得られる。In the above embodiment, the case where the substrate having the spinel structure is the MgAl 2 O 4 substrate has been described. However, the same effect can be obtained when the substrate has another spinel structure.
【００１２】さらに、上述の実施例ではスピネル構造を
形成できる成分Ｍｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、
Ｌｉ、Ｖを含まない六方晶系酸化物膜がＢａＦｅ12Ｏ19
膜である場合について説明したが、ＳｒＦｅ12Ｏ19膜な
どのＭｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍｇ、Ｃｒ、Ｌｉ、Ｖよ
り選ばれる１種以上の元素を含まない六方晶系酸化物膜
である場合においても同様の効果が得られる。Further, in the above-described embodiment, components Mn, Zn, Co, Ni, Mg, Cr, which can form a spinel structure,
The hexagonal oxide film not containing Li and V is made of BaFe 12 O 19
The case where the film is a film has been described, but a hexagonal oxide film not containing at least one element selected from Mn, Zn, Co, Ni, Mg, Cr, Li, and V, such as a SrFe 12 O 19 film. In this case, the same effect can be obtained.
【００１３】また、上述の実施例では、目的の六方晶系
酸化物磁性体膜がＢａＺｎＦｅ6 Ｏ 11膜である場合につ
いて説明したが、その他の六方晶系酸化物磁性体膜にお
いても同様の効果が得られる。In the above embodiment, the desired hexagonal system is used.
Oxide magnetic film is BaZnFe6 O 11When it is a membrane
However, other hexagonal oxide magnetic film
However, the same effect can be obtained.
【００１４】[0014]
【発明の効果】この発明によれば、目的とする六方晶系
酸化物磁性体膜をスピネル構造などの異相を形成するこ
となく製造することが可能となる。According to the present invention, a desired hexagonal oxide magnetic film can be manufactured without forming a heterophase such as a spinel structure.
Claims (9)
を形成できる成分を含まない六方晶系酸化物膜が形成さ
れ、 前記六方晶系酸化物膜の上に形成されることを特徴とす
る、六方晶系酸化物磁性体膜。1. A hexagonal oxide film containing no component capable of forming a spinel structure is formed on a substrate having a spinel structure, and the hexagonal oxide film is formed on the hexagonal oxide film. Hexagonal oxide magnetic film.
い六方晶系酸化物膜が、Ｍｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍ
ｇ、Ｃｒ、Ｌｉ、Ｖより選ばれる１種以上の元素を含ま
ない六方晶系酸化物膜である、請求項１に記載の六方晶
系酸化物磁性体膜。2. A hexagonal oxide film containing no component capable of forming a spinel structure is formed of Mn, Zn, Co, Ni, M
The hexagonal oxide magnetic film according to claim 1, which is a hexagonal oxide film not containing at least one element selected from g, Cr, Li, and V.
だし、ＡはＺｎ、Ｍｇより選ばれる１種以上の元素、か
つ、ＢはＩｎ、Ｇａ、Ａｌより選ばれる１種以上の元
素）である、請求項１または請求項２に記載の六方晶系
酸化物磁性体膜。3. A substrate having a spinel structure is made of AB 2 O 4 (where A is at least one element selected from Zn and Mg, and B is at least one element selected from In, Ga and Al) The hexagonal oxide magnetic material film according to claim 1 or 2, wherein
い六方晶系酸化物膜が、ＣＦｅ12Ｏ19（ただし、ＣはＢ
ａ、Ｓｒ、Ｃａ、Ｐｂより選ばれる１種以上の元素）で
ある、請求項１ないし請求項３のいずれかに記載の六方
晶系酸化物磁性体膜。4. A hexagonal oxide film containing no component capable of forming a spinel structure is formed of CFe 12 O 19 (where C is B
4. The hexagonal oxide magnetic film according to claim 1, wherein the film is at least one element selected from a, Sr, Ca, and Pb).
を形成できる成分を含まない六方晶系酸化物膜を形成し
た後、 前記六方晶系酸化物膜の上に六方晶系酸化物磁性体膜を
形成することを特徴とする、六方晶系酸化物磁性体膜の
製造方法。5. After forming a hexagonal oxide film containing no component capable of forming a spinel structure on a substrate having a spinel structure, a hexagonal oxide magnetic film is formed on the hexagonal oxide film. Forming a hexagonal oxide magnetic film.
い六方晶系酸化物膜が、Ｍｎ、Ｚｎ、Ｃｏ、Ｎｉ、Ｍ
ｇ、Ｃｒ、Ｌｉ、Ｖより選ばれる１種以上の元素を含ま
ない六方晶系酸化物膜である、請求項５に記載の六方晶
系酸化物磁性体膜の製造方法。6. A hexagonal oxide film containing no component capable of forming a spinel structure is formed of Mn, Zn, Co, Ni, M
The method for producing a hexagonal oxide magnetic film according to claim 5, wherein the film is a hexagonal oxide film not containing at least one element selected from g, Cr, Li, and V.
だし、ＡはＺｎ、Ｍｇより選ばれる１種以上の元素、お
よびＢはＩｎ、Ｇａ、Ａｌより選ばれる１種以上の元
素）である、請求項５または請求項６に記載の六方晶系
酸化物磁性体膜の製造方法。7. A substrate having a spinel structure is made of AB 2 O 4 (where A is at least one element selected from Zn and Mg, and B is at least one element selected from In, Ga and Al). 7. The method for producing a hexagonal oxide magnetic film according to claim 5 or claim 6.
い六方晶系酸化物膜が、ＣＦｅ12Ｏ19（ただし、ＣはＢ
ａ、Ｓｒ、Ｃａ、Ｐｂより選ばれる１種以上の元素）で
ある、請求項５ないし請求項７のいずれかに記載の六方
晶系酸化物磁性体膜の製造方法。8. A hexagonal oxide film containing no component capable of forming a spinel structure is formed of CFe 12 O 19 (where C is B
The method for producing a hexagonal oxide magnetic film according to any one of claims 5 to 7, wherein the element is at least one element selected from a, Sr, Ca, and Pb).
晶系酸化物磁性体膜の形成方法が、液相エピタキシャル
成長法、レーザーアブレーション法、スパッタ法および
化学蒸着法のうち少なくとも１種である、請求項５ない
し請求項８のいずれかに記載の六方晶系酸化物磁性体膜
の製造方法。9. The method for forming a hexagonal oxide film and the method for forming a hexagonal oxide magnetic film are at least one of a liquid phase epitaxial growth method, a laser ablation method, a sputtering method and a chemical vapor deposition method. A method for producing a hexagonal oxide magnetic film according to any one of claims 5 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000370528A JP2002173397A (en) | 2000-12-05 | 2000-12-05 | Hexagonal oxide magnetic film and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000370528A JP2002173397A (en) | 2000-12-05 | 2000-12-05 | Hexagonal oxide magnetic film and method of producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002173397A true JP2002173397A (en) | 2002-06-21 |
Family
ID=18840405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000370528A Pending JP2002173397A (en) | 2000-12-05 | 2000-12-05 | Hexagonal oxide magnetic film and method of producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002173397A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158926A1 (en) * | 2015-03-31 | 2016-10-06 | Tdk株式会社 | Magnetoresistive effect element |
| EP3279958A4 (en) * | 2015-03-31 | 2018-12-05 | TDK Corporation | Magnetoresistive effect element |
| US10629231B2 (en) | 2015-03-31 | 2020-04-21 | Tdk Corporation | Magnetoresistance effect element |
| US10720178B2 (en) | 2015-03-31 | 2020-07-21 | Tdk Corporation | Magnetoresistance effect element |
-
2000
- 2000-12-05 JP JP2000370528A patent/JP2002173397A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158926A1 (en) * | 2015-03-31 | 2016-10-06 | Tdk株式会社 | Magnetoresistive effect element |
| EP3279958A4 (en) * | 2015-03-31 | 2018-12-05 | TDK Corporation | Magnetoresistive effect element |
| US10319904B2 (en) | 2015-03-31 | 2019-06-11 | Tdk Corporation | Magnetoresistance effect element |
| US10446740B2 (en) | 2015-03-31 | 2019-10-15 | Tdk Corporation | Magnetoresistance effect element |
| US10629231B2 (en) | 2015-03-31 | 2020-04-21 | Tdk Corporation | Magnetoresistance effect element |
| US10720178B2 (en) | 2015-03-31 | 2020-07-21 | Tdk Corporation | Magnetoresistance effect element |
| US11056642B2 (en) | 2015-03-31 | 2021-07-06 | Tdk Corporation | Magnetoresistance effect element |
| US11133028B2 (en) | 2015-03-31 | 2021-09-28 | Tdk Corporation | Magnetoresistance effect element |
| US11600771B2 (en) | 2015-03-31 | 2023-03-07 | Tdk Corporation | Magnetoresistance effect element |
| US11763841B2 (en) | 2015-03-31 | 2023-09-19 | Tdk Corporation | Magnetoresistance effect element |
| US11871681B2 (en) | 2015-03-31 | 2024-01-09 | Tdk Corporation | Magnetoresistance effect element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2004067813A1 (en) | Magnetic garnet single crystal film forming substrate, optical element, and method for manufacturing the same | |
| CN106637405A (en) | An infinitely mixable and meltable ferroelectric solid solution monocrystalline lead scandium niobate-lead magnesium niobate-lead titanate and a preparing method thereof | |
| CN100350562C (en) | Method for preparation of ferroelectric single crystal film structure using deposition method | |
| JP2002173397A (en) | Hexagonal oxide magnetic film and method of producing the same | |
| JP2004269305A (en) | Substrate for forming magnetic garnet single crystal film, its manufacturing method, optical element, and its manufacturing method | |
| KR0143799B1 (en) | Single crystal growth method for bariumtitanikm oxide using noncrystalline solio growth | |
| US20070104639A1 (en) | Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby | |
| JPH0692796A (en) | Production of thin film by epitaxial growth | |
| JP4422678B2 (en) | Method for manufacturing ferroelectric single crystal film structure using vapor deposition method | |
| KR20170140488A (en) | Method of manufacturing potassium sodium niobate ceramics with single crystal and potassium sodium niobate ceramics with single crystal manufactured by the method | |
| JP6887678B2 (en) | Method for manufacturing magnetic garnet single crystal | |
| JP2004269283A (en) | Substrate for forming magnetic garnet single crystal film, its manufacturing method, optical element, and its manufacturing method | |
| JP2998628B2 (en) | Magnetostatic wave device | |
| US4354254A (en) | Devices depending on garnet materials | |
| JP3188541B2 (en) | Method for producing single crystal thin film by liquid phase epitaxy | |
| RU2128734C1 (en) | METHOD OF PREPARING MONOCRYSTALS OF POTASSIUM TITANYL ARSENATE KTiOAsO4 | |
| KR100355150B1 (en) | Method for Single Crystal Growth of Barium Titanate Solid Solution | |
| JP4432875B2 (en) | Method for producing garnet single crystal | |
| JP2763040B2 (en) | Oxide garnet single crystal | |
| JPH10273396A (en) | Production of oxide having layered crystal structure | |
| JPH0867600A (en) | Production of bismuth-substituted rare-earth iron garnet single crystal | |
| JPH09208393A (en) | Production of microwave element material | |
| JPH0478595B2 (en) | ||
| JP4239506B2 (en) | Method for manufacturing substrate for piezoelectric device | |
| JP2000357622A (en) | Method for manufacturing magnetic garnet single crystal film, and the magnetic garnet single crystal film |