JP2002158267A - Inspection method and device of semiconductor wafer - Google Patents
Inspection method and device of semiconductor waferInfo
- Publication number
- JP2002158267A JP2002158267A JP2000354782A JP2000354782A JP2002158267A JP 2002158267 A JP2002158267 A JP 2002158267A JP 2000354782 A JP2000354782 A JP 2000354782A JP 2000354782 A JP2000354782 A JP 2000354782A JP 2002158267 A JP2002158267 A JP 2002158267A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- gas
- formation region
- element formation
- probe needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、検査技術、特に測
定誤差の発生を抑制できる半導体ウエハの検査法及び検
査装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection technique, and more particularly to an inspection method and an inspection apparatus for a semiconductor wafer capable of suppressing occurrence of a measurement error.
【０００２】[0002]
【従来の技術】所望の半導体領域が拡散形成された半導
体ウエハの特性を検査するに際して、半導体ウエハに多
数形成された半導体素子上の電極にプローブ針を当接さ
せて電気的特性を検査する半導体ウエハ検査方法があ
る。例えば、特開平８−３２７６９０号公報には、プロ
ーブ針と被試験ウエハの針圧不足による歩留まり低下を
防止する半導体ウエハ検査装置が開示されている。この
半導体ウエハ検査装置は、プローブ針の針圧対応検査項
目の規格情報を格納する記憶部と、検査項目の測定値と
規格情報とを比較する比較部とを含み、比較結果に対応
して駆動機器の制御信号を発生する制御部とを備え、画
像処理等の複雑な装置を使用せずに、プローブ針の針圧
を自動的に修正して、歩留まりの低下を防止することが
できる。2. Description of the Related Art When testing the characteristics of a semiconductor wafer in which a desired semiconductor region is formed by diffusion, a probe needle is brought into contact with electrodes on semiconductor elements formed in large numbers on the semiconductor wafer to test the electrical characteristics. There is a wafer inspection method. For example, Japanese Patent Application Laid-Open No. 8-327690 discloses a semiconductor wafer inspection apparatus that prevents a decrease in yield due to insufficient needle pressure between a probe needle and a wafer under test. This semiconductor wafer inspection apparatus includes a storage unit for storing standard information of the inspection items corresponding to the needle pressure of the probe needle, and a comparison unit for comparing the measured value of the inspection item with the standard information, and driven in accordance with the comparison result. A control unit that generates a control signal for the device is provided, and the needle pressure of the probe needle can be automatically corrected without using a complicated device such as image processing, thereby preventing a decrease in yield.
【０００３】図４及び図５に示すように、従来の半導体
ウエハ検査装置は、半導体特性検査装置(1)と、半導体
特性検査装置(1)にケーブル(2)を介して接続されたプロ
ーブ針(3)と、被検査用の半導体ウエハ(4)を載置するウ
エハ載置台(5)と、ウエハ載置台(5)を垂直方向に移動さ
せる駆動装置(6)とを有する。半導体ウエハ(4)は、真空
吸着によりウエハ載置台(5)上の所定の位置に固定さ
れ、ウエハ載置台(5)は駆動装置(6)によって垂直方向又
は回転方向等に移動され、駆動装置(6)によって上側に
ウエハ載置台(5)が移動したときに、プローブ針(3)は半
導体ウエハ(4)の電極に当接する。半導体特性検査装置
(1)は、電気的特性試験用の所望の電気信号を半導体ウ
エハ(4)に供給すると共に、プローブ針(3)からの電気的
信号を処理して特性検査を実行する。As shown in FIGS. 4 and 5, a conventional semiconductor wafer inspection apparatus comprises a semiconductor characteristic inspection apparatus (1) and a probe needle connected to the semiconductor characteristic inspection apparatus (1) via a cable (2). (3), a wafer mounting table (5) for mounting a semiconductor wafer (4) to be inspected, and a driving device (6) for vertically moving the wafer mounting table (5). The semiconductor wafer (4) is fixed at a predetermined position on the wafer mounting table (5) by vacuum suction, and the wafer mounting table (5) is moved in a vertical direction or a rotating direction by a driving device (6), and the driving device When the wafer mounting table (5) is moved upward by (6), the probe needle (3) comes into contact with the electrode of the semiconductor wafer (4). Semiconductor property inspection equipment
In (1), a desired electric signal for an electric characteristic test is supplied to the semiconductor wafer (4), and an electric signal from the probe needle (3) is processed to execute a characteristic test.
【０００４】[0004]
【発明が解決しようとする課題】ところで、半導体ウエ
ハ(4)に静電気が帯電すると、半導体素子の電気的特性
が劣化したり半導体素子の破壊が生ずる。従って、半導
体ウエハの製造工程、検査工程では半導体ウエハ(4)へ
の静電気の帯電を極力防止する必要がある。このため、
半導体ウエハ(4)の特性を検査するとき、半導体特性検
査装置(1)の周囲の湿度を５０%以上に保持して半導体ウ
エハ(4)への静電気の帯電を防止している。このよう
に、比較的湿度の高い雰囲気内に半導体ウエハ(4)が配
置されると、低温の半導体ウエハ(4)の表面に水蒸気が
凝結して微量の水滴が付着する結露現象が発生する。半
導体ウエハ(4)の表面に水滴が形成されると、水滴中に
含まれるイオン等が特性検査を良好に又は高精度に行う
ことを妨げることがある。この結果、本来良好な電気的
特性を有する半導体領域も耐圧等が不足すると判断さ
れ、不良品として認識されて排除されるため、製品歩留
まりが低下する欠点がある。When the semiconductor wafer (4) is charged with static electricity, the electrical characteristics of the semiconductor elements are degraded or the semiconductor elements are destroyed. Therefore, it is necessary to minimize charging of the semiconductor wafer (4) with static electricity in the semiconductor wafer manufacturing process and the inspection process. For this reason,
When inspecting the characteristics of the semiconductor wafer (4), the humidity around the semiconductor characteristic inspection device (1) is kept at 50% or more to prevent the semiconductor wafer (4) from being charged with static electricity. As described above, when the semiconductor wafer (4) is placed in a relatively humid atmosphere, a condensation phenomenon occurs in which water vapor condenses on the surface of the low-temperature semiconductor wafer (4) and a small amount of water droplets adhere. When water droplets are formed on the surface of the semiconductor wafer (4), ions or the like contained in the water droplets may hinder good or high-precision characteristic inspection. As a result, the semiconductor region which originally has good electrical characteristics is determined to have insufficient withstand voltage and the like, and is recognized and rejected as a defective product.
【０００５】特性検査前に半導体ウエハ(4)に熱処理を
施し、半導体ウエハ(4)上の水分を蒸発させた後に特性
を検査する方法も考えられるが、半導体ウエハ(4)上の
水分を蒸発させた直後に新しい水滴が半導体ウエハ(4)
の表面に付着するのが実状であり、半導体ウエハ(4)自
体の温度を周辺温度と同一に保持して結露現象を防止す
ることは事実上不可能である。A method of subjecting the semiconductor wafer (4) to heat treatment before the characteristic inspection and evaporating the moisture on the semiconductor wafer (4) is also considered. Immediately after the release, a new water droplet is deposited on the semiconductor wafer (4).
It is practically impossible to prevent the dew condensation phenomenon by keeping the temperature of the semiconductor wafer (4) itself at the same temperature as the ambient temperature.
【０００６】そこで、本発明の目的は、半導体ウエハへ
の水分の付着を防止して、半導体ウエハの特性を良好に
検査できる検査法及び検査装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide an inspection method and an inspection apparatus capable of preventing the adhesion of moisture to a semiconductor wafer and satisfactorily inspecting the characteristics of the semiconductor wafer.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体ウエハの
検査法は、半導体ウエハ(4)に対して化学的に不活性な
窒素ガス等のガスを半導体ウエハ(4)の素子形成領域(7)
に吹き付ける工程と、素子形成領域(7)にプローブ針(3)
を当接させる工程と、プローブ針(3)から電気的信号を
受信して素子形成領域(7)の電気的特性を検査する工程
とを含む。半導体ウエハ(4)の素子形成領域(7)に不活性
なガスを吹き付けることにより、素子形成領域(7)に不
活性なガスの雰囲気を形成して、半導体ウエハ(4)の表
面特性の劣化を防止することができる。また、素子形成
領域(7)に付着する水蒸気を除去し、水分による電気的
短絡を回避し且つ半導体ウエハ(4)の表面に対する周辺
環境の影響を除去しながら、素子形成領域(7)から正確
な電気信号を取り出して検査することができる。更に、
不活性なガスの吹き付けにより素子形成領域(7)に付着
する異物を飛散させると共に、素子形成領域(7)の表面
温度を上昇させて検査中に水滴の形成を抑制することが
できる。この場合に、素子形成領域(7)からの水分の急
激な蒸発による温度変化に起因する半導体ウエハ(4)の
変形を抑制するため、必要に応じて飽和度１０%以下の
揮発性の液体蒸気をガス中に混入することができる。飽
和度が０%でなくても、素子形成領域(7)に付着した水分
を除去することができ且つ新たな水滴の付着を防止する
ことができる。適宜の温度に加熱したガスを素子形成領
域(7)に連続的に供給して、新たな水滴の付着を防止す
ることができる。ガスとして窒素、アルゴン等を使用す
ることができ、揮発性の液体として静電気を有効に除去
できかつ電気的測定を阻害しない量の水、アルコール等
を使用することができる。実際には、半導体ウエハ(4)
の表面に対してθ＝３０〜７５度の角度でガスを供給し
て、プローブ針(3)と半導体ウエハ(4)との接触点(9)を
通るガスの気流を発生すると、半導体ウエハ(4)の表面
に沿って接触点(9)で連続的にガスが流れる。According to the method for inspecting a semiconductor wafer of the present invention, a gas such as nitrogen gas which is chemically inert to the semiconductor wafer (4) is supplied to the element formation region (7) of the semiconductor wafer (4). )
And a probe needle (3) in the element formation region (7).
And a step of receiving an electrical signal from the probe needle (3) and testing the electrical characteristics of the element formation region (7). By blowing an inert gas onto the element forming area (7) of the semiconductor wafer (4), an inert gas atmosphere is formed in the element forming area (7), thereby deteriorating the surface characteristics of the semiconductor wafer (4). Can be prevented. In addition, by removing water vapor adhering to the element formation region (7), avoiding an electrical short circuit due to moisture, and removing the influence of the surrounding environment on the surface of the semiconductor wafer (4), accurate removal from the element formation region (7) is achieved. Electrical signals can be extracted and inspected. Furthermore,
Foreign matter adhering to the element formation region (7) can be scattered by blowing the inert gas, and the surface temperature of the element formation region (7) can be increased to suppress the formation of water droplets during the inspection. In this case, in order to suppress deformation of the semiconductor wafer (4) due to a temperature change due to rapid evaporation of moisture from the element formation region (7), a volatile liquid vapor having a saturation degree of 10% or less is provided as necessary. Can be mixed into the gas. Even if the degree of saturation is not 0%, it is possible to remove moisture adhering to the element formation region (7) and prevent adhesion of new water droplets. A gas heated to an appropriate temperature can be continuously supplied to the element formation region (7) to prevent the attachment of new water droplets. Nitrogen, argon, or the like can be used as a gas, and water, alcohol, or the like can be used as a volatile liquid in an amount that can effectively remove static electricity and does not interfere with electrical measurement. Actually, semiconductor wafer (4)
When gas is supplied at an angle of θ = 30 to 75 degrees with respect to the surface of the wafer to generate a gas flow passing through a contact point (9) between the probe needle (3) and the semiconductor wafer (4), the semiconductor wafer ( Gas flows continuously along the surface of 4) at the contact point (9).
【０００８】本発明による半導体ウエハの検査装置は、
半導体ウエハ(4)を載置するウエハ載置台(5)と、半導体
ウエハ(4)の素子形成領域(7)に対して進退自在に配置さ
れ且つ半導体ウエハ(4)の表面に当接して電気的接続を
行うプローブ針(3)と、プローブ針(3)が当接する素子形
成領域(7)に半導体ウエハ(4)に対して化学的に不活性な
ガスを供給するガス供給装置(8)とを備えている。ガス
供給装置(8)は半導体ウエハ(4)の表面に対してθ＝３０
〜７５度の角度で傾斜するノズル管(11)と、ノズル管(1
1)に接続されかつ不活性なガスが収容されたタンク(10)
とを備えている。An inspection apparatus for a semiconductor wafer according to the present invention comprises:
A wafer mounting table (5) on which the semiconductor wafer (4) is mounted, and a semiconductor wafer (4) are disposed so as to be able to advance and retreat with respect to the element forming area (7) of the semiconductor wafer (4). A probe needle (3) for making an electrical connection, and a gas supply device (8) for supplying a chemically inert gas to the semiconductor wafer (4) to the element forming region (7) where the probe needle (3) is in contact And The gas supply device (8) is provided at the surface of the semiconductor wafer (4) with θ = 30.
The nozzle tube (11) inclined at an angle of ~ 75 degrees and the nozzle tube (1
Tank (10) connected to 1) and containing inert gas
And
【０００９】[0009]
【発明の実施の形態】次に、本発明による半導体ウエハ
の検査法及び検査装置の実施の形態を図１〜図３につい
て説明するが、これらの図面では、図４及び図５に示す
箇所と同一の部分には同一の符号を付す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a method and an apparatus for inspecting a semiconductor wafer according to the present invention will be described with reference to FIGS. 1 to 3. In these drawings, the parts shown in FIGS. The same parts are denoted by the same reference numerals.
【００１０】本実施例の半導体ウエハ検査装置は、プロ
ーブ針(3)が当接する素子形成領域(7)に半導体ウエハ
(4)に対して化学的に不活性なガスを供給するガス供給
装置(8)を備える点で従来の検査装置と相違する。ガス
供給装置(8)は半導体ウエハ(4)の表面に対して３０〜７
５度の角度で傾斜するノズル管(11)と、ノズル管(11)に
接続され且つ加圧された窒素ガスを収容するタンク(10)
と、ノズル管(11)に設けられ且つ吹き付けガスの圧力を
制御する制御弁(12)とを備えている。タンク(10)に収容
された窒素ガスは、制御弁(12)によって所望の圧力に調
整されてノズル管(11)から外部に噴出する。ノズル管(1
1)の噴出口は半導体ウエハ(4)の表面に向けて配置さ
れ、図示しない駆動装置によって半導体ウエハ(4)の平
面方向のＸ軸方向及びＹ軸方向に駆動される。半導体ウ
エハ(4)の全表面に窒素ガスを吹き付けるようにノズル
管(11)を構成し又は半導体ウエハ(4)の表面に平行な平
面内でノズル管(11)の噴出口をＸＹ方向に移動させて半
導体ウエハ(4)の一部の領域に順次局部的に窒素ガスを
噴出するようにノズル管(11)を構成してもよい。いずれ
の場合も、プローブ針(3)の当接する接触点(9)に対し半
導体ウエハ(4)の表面領域に所定の噴出圧力で窒素ガス
を噴出し、プローブ針(3)の移動に同期させてノズル管
(11)の噴出口をＸＹ方向に駆動させることもできる。The semiconductor wafer inspection apparatus according to the present embodiment includes a semiconductor wafer inspection device in an element forming area (7) where the probe needle (3) contacts.
This is different from the conventional inspection device in that a gas supply device (8) for supplying a chemically inert gas to (4) is provided. The gas supply device (8) is provided for the surface of the semiconductor wafer (4) at 30 to 7
A nozzle pipe (11) inclined at an angle of 5 degrees, and a tank (10) connected to the nozzle pipe (11) and containing pressurized nitrogen gas
And a control valve (12) provided in the nozzle pipe (11) and controlling the pressure of the blowing gas. The nitrogen gas stored in the tank (10) is adjusted to a desired pressure by the control valve (12), and is ejected from the nozzle pipe (11) to the outside. Nozzle tube (1
The ejection port of 1) is arranged toward the surface of the semiconductor wafer (4), and is driven by a driving device (not shown) in the X-axis direction and the Y-axis direction in the plane direction of the semiconductor wafer (4). Configure the nozzle tube (11) so that nitrogen gas is blown on the entire surface of the semiconductor wafer (4), or move the nozzle of the nozzle tube (11) in the XY direction in a plane parallel to the surface of the semiconductor wafer (4) The nozzle tube (11) may be configured so that nitrogen gas is sequentially and locally jetted to a partial area of the semiconductor wafer (4). In any case, nitrogen gas is ejected from the contact point (9) with which the probe needle (3) comes into contact with the surface area of the semiconductor wafer (4) at a predetermined ejection pressure to synchronize with the movement of the probe needle (3). Nozzle tube
The jet port (11) can be driven in the XY directions.
【００１１】半導体ウエハ(4)を電気的に検査する際
に、まず、半導体領域が拡散形成された半導体ウエハ
(4)を図示しないウエハ供給用冶具によって真空吸着
し、ウエハ載置台(5)上に供給し、真空吸着によって半
導体ウエハ(4)をウエハ載置台(5)上に固定する。次に、
半導体特性検査装置内のメモリに記憶されたデータに基
づいてプローバ針(3)をＸＹ方向に移動させ、予め決め
られた順番でプローバ針(3)を半導体ウエハ(4)上の電極
に当接させる。プローバ針(3)を電極に接触させ又は離
間させるとき、ウエハ載置台(5)を垂直方向（Ｚ軸方
向）に移動させか又はウエハ載置台(5)を固定し、プロ
ーバ針(3)側を上下に移動する。また、プローバ針(3)の
移動に同期させてノズル管(11)をＸＹ方向に移動させ、
半導体ウエハ(4)の表面に対して４５〜６０度の角度で
所定の圧力でノズル管(11)から窒素ガスを吹き付けて、
素子形成領域(7)の接触点(9)で素子形成領域(7)の電極
にプローブ針(3)を当接させる。電極に接触したプロー
ブ針(3)から電気的信号を半導体特性検査装置内のテス
タで受信して素子形成領域(7)の電気的特性を検査する
とき、少なくとも被検査素子の全領域を含むようにウエ
ハ表面に窒素ガスを吹き付ける必要があるので、プロー
ブ針(3)と半導体ウエハ(4)との接触点(9)を通る窒素ガ
スの気流を発生すると、接触点(9)及び素子形成領域(7)
を含む被検査素子の全領域に連続的に窒素ガスが流れ
て、素子形成領域(7)に窒素ガスの雰囲気が形成され、
半導体ウエハ(4)の表面特性の劣化を防止することがで
きる。この場合、半導体ウエハ(4)はほぼ室温に保持さ
れるが、窒素ガスは１５〜８０℃の範囲内の温度に保持
される。また、窒素ガスの流れは、素子形成領域(7)に
付着する水蒸気を除去し、水分による電気的短絡を回避
し且つ半導体ウエハ(4)の表面に対する周辺環境の影響
を除去しながら、水分のない状態で素子形成領域(7)か
ら正確な電気信号を取り出して検査することができる。
更に、窒素ガスの吹き付けにより素子形成領域(7)に付
着する異物を飛散させると共に、素子形成領域(7)の表
面温度を上昇させて検査中に水滴の形成を抑制すること
ができる。この場合に、素子形成領域(7)からの水分の
急激な蒸発による温度変化に起因する半導体ウエハ(4)
の変形を抑制するため、必要に応じて飽和度１０%以下
の揮発性の液体蒸気をガス中に混入することができる。
飽和度が０%でなくても、十分に低い飽和度であれば素
子形成領域(7)に付着した水分を除去することができ且
つ新たな水滴の付着を防止することができる。適宜の温
度に加熱したガスを素子形成領域(7)に連続的に供給し
て、新たな水滴の付着を防止することができる。半導体
ウエハ(4)を窒素又は不活性ガスにより熱処理すると安
定するが、大気に触れると短時間（数分）で元の不安定
な特性に戻る。図３は、同一の半導体ウエハを１秒毎に
５回測定した場合の耐圧の変化を示すグラフである。本
発明では、不活性なガスにより時間の経過に対し半導体
ウエハの耐圧が殆ど変化せず、安定しているのに対し、
従来の検査法では、空気中の水分が半導体ウエハの表面
に瞬時に吸着され、水分中のイオンの極性が表面薄膜を
界して耐圧を変化させるため、５秒経過後に耐圧が大き
く低下する。このため、本発明では、電気的特性に問題
ない半導体ウエハを不良と誤審することはなく、歩留り
は、品種によって異なるが、５%〜３０%も向上し、効果
は絶大である。When electrically inspecting a semiconductor wafer (4), first, a semiconductor wafer having a semiconductor region formed by diffusion is formed.
(4) is vacuum-sucked by a wafer supply jig (not shown), supplied to the wafer mounting table (5), and the semiconductor wafer (4) is fixed on the wafer mounting table (5) by vacuum suction. next,
The prober needle (3) is moved in the XY directions based on the data stored in the memory in the semiconductor characteristic inspection device, and the prober needle (3) is brought into contact with the electrode on the semiconductor wafer (4) in a predetermined order. Let it. When bringing the prober needle (3) into or out of contact with the electrode, move the wafer mounting table (5) in the vertical direction (Z-axis direction) or fix the wafer mounting table (5), and set the prober needle (3) side To move up and down. Further, the nozzle tube (11) is moved in the XY directions in synchronization with the movement of the prober needle (3),
Blowing nitrogen gas from the nozzle tube (11) at a predetermined pressure at an angle of 45 to 60 degrees with respect to the surface of the semiconductor wafer (4),
The probe needle (3) is brought into contact with the electrode of the element formation region (7) at the contact point (9) of the element formation region (7). When an electrical signal is received from the probe needle (3) in contact with the electrode by a tester in the semiconductor characteristic inspection device to inspect the electrical characteristics of the element formation region (7), at least the entire region of the element to be inspected is included. Since it is necessary to spray nitrogen gas on the wafer surface, when a gas flow of nitrogen gas is generated through the contact point (9) between the probe needle (3) and the semiconductor wafer (4), the contact point (9) and the element formation area (7)
Nitrogen gas flows continuously in the entire region of the device under test including, and an atmosphere of nitrogen gas is formed in the device forming region (7),
Deterioration of the surface characteristics of the semiconductor wafer (4) can be prevented. In this case, the semiconductor wafer (4) is kept at approximately room temperature, while the nitrogen gas is kept at a temperature in the range of 15 to 80C. In addition, the flow of nitrogen gas removes water vapor adhering to the element formation region (7), avoids an electric short circuit due to moisture, and removes the influence of the surrounding environment on the surface of the semiconductor wafer (4) while removing moisture. An accurate electric signal can be taken out from the element forming region (7) and inspected without the device.
Further, foreign matters adhering to the element formation region (7) are scattered by spraying the nitrogen gas, and the surface temperature of the element formation region (7) is increased, so that the formation of water droplets during the inspection can be suppressed. In this case, the semiconductor wafer (4) caused by a temperature change due to rapid evaporation of moisture from the element formation region (7)
In order to suppress the deformation of the gas, a volatile liquid vapor having a saturation degree of 10% or less can be mixed into the gas as needed.
Even if the degree of saturation is not 0%, if the degree of saturation is sufficiently low, the moisture adhering to the element formation region (7) can be removed, and the adhesion of new water droplets can be prevented. A gas heated to an appropriate temperature can be continuously supplied to the element formation region (7) to prevent the attachment of new water droplets. When the semiconductor wafer (4) is heat-treated with nitrogen or an inert gas, it becomes stable, but returns to the original unstable characteristics in a short time (several minutes) when exposed to the air. FIG. 3 is a graph showing a change in withstand voltage when the same semiconductor wafer is measured five times every second. In the present invention, the pressure resistance of the semiconductor wafer hardly changes with the passage of time due to the inert gas, and the semiconductor wafer is stable.
In the conventional inspection method, the moisture in the air is instantly adsorbed on the surface of the semiconductor wafer, and the polarity of the ions in the moisture crosses the surface thin film to change the breakdown voltage. For this reason, in the present invention, a semiconductor wafer having no problem in electrical characteristics is not erroneously judged as a defect, and the yield is improved by 5% to 30%, depending on the type, and the effect is enormous.
【００１２】[0012]
【発明の効果】前記のように、本発明では、どのような
環境下でも水蒸気の影響をなくし、半導体ウエハの特性
を正確に且つ安定して検査することができ、製品歩留ま
りを向上することができる。As described above, according to the present invention, the effects of water vapor can be eliminated under any environment, the characteristics of a semiconductor wafer can be inspected accurately and stably, and the product yield can be improved. it can.
【図１】 本発明による半導体ウエハの検査装置を示す
斜視図FIG. 1 is a perspective view showing a semiconductor wafer inspection apparatus according to the present invention.
【図２】 図１の概念を示すブロック図FIG. 2 is a block diagram showing the concept of FIG. 1;
【図３】 特定の電流値での耐圧特性を示すグラフFIG. 3 is a graph showing a breakdown voltage characteristic at a specific current value.
【図４】 従来の半導体ウエハの検査装置を示す斜視図FIG. 4 is a perspective view showing a conventional semiconductor wafer inspection apparatus.
【図５】 図４の概念を示すブロック図FIG. 5 is a block diagram showing the concept of FIG. 4;
(3)・・プローブ針、 (4)・・半導体ウエハ、 (5)・
・ウエハ載置台、 (6)・・駆動装置、 (7)・・素子形
成領域、 (8)・・ガス供給装置、 (9)・・接触点、
(10)・・タンク、 (11)・・ノズル管、(3) ・ ・ Probe needle, (4) ・ ・ Semiconductor wafer, (5) ・
・ Wafer mounting table, (6) ・ ・ Drive device, (7) ・ ・ Device formation area, (8) ・ ・ Gas supply device, (9) ・ ・ Contact point,
(10) Tank, (11) Nozzle tube,
Claims (5)
ガスを前記半導体ウエハの素子形成領域に吹き付ける工
程と、前記素子形成領域にプローブ針を当接させる工程
と、前記プローブ針から電気的信号を受信して前記素子
形成領域の電気的特性を検査する工程とを含むことを特
徴とする半導体ウエハの検査法。A step of blowing a gas which is chemically inert to the semiconductor wafer to an element forming region of the semiconductor wafer; a step of bringing a probe needle into contact with the element forming region; Receiving a signal and inspecting the electrical characteristics of the element formation region.
載の半導体ウエハの検査法。2. The method according to claim 1, wherein the gas is a nitrogen gas.
液体蒸気を含む請求項１又は２に記載の半導体ウエハの
検査法。3. The semiconductor wafer inspection method according to claim 1, wherein the gas contains a volatile liquid vapor having a saturation degree of 10% or less.
７５度の角度で前記ガスを供給して、前記プローブ針と
半導体ウエハとの接触点を通る前記ガスの気流を発生す
る工程を含む請求項１に記載の半導体ウエハの検査法。4. A semiconductor wafer having a surface area of 30 to
The method of claim 1, further comprising supplying the gas at an angle of 75 degrees to generate an airflow of the gas through a contact point between the probe needle and the semiconductor wafer.
と、半導体ウエハの素子形成領域に対して進退自在に配
置され且つ前記半導体ウエハの表面に当接して電気的接
続を行うプローブ針と、該プローブ針が当接する素子形
成領域に前記半導体ウエハに対して化学的に不活性なガ
スを供給するガス供給装置とを備え、前記ガス供給装置
は前記半導体ウエハの表面に対して３０〜７５度の角度
で傾斜するノズル管と、該ノズル管に接続されかつ不活
性なガスが収容されたタンクとを備えたことを特徴とす
る半導体ウエハの検査装置。5. A wafer mounting table on which a semiconductor wafer is mounted, a probe needle which is disposed so as to be able to advance and retreat with respect to an element formation region of the semiconductor wafer, and abuts on a surface of the semiconductor wafer to perform electrical connection; A gas supply device for supplying a gas that is chemically inert to the semiconductor wafer in an element formation region where the probe needle contacts, the gas supply device having a temperature of 30 to 75 degrees with respect to the surface of the semiconductor wafer. An inspection apparatus for a semiconductor wafer, comprising: a nozzle pipe inclined at an angle; and a tank connected to the nozzle pipe and containing an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354782A JP2002158267A (en) | 2000-11-21 | 2000-11-21 | Inspection method and device of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000354782A JP2002158267A (en) | 2000-11-21 | 2000-11-21 | Inspection method and device of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002158267A true JP2002158267A (en) | 2002-05-31 |
Family
ID=18827307
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|---|---|---|---|
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| JP (1) | JP2002158267A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610446B2 (en) | 2010-06-02 | 2013-12-17 | Fuji Electric Co., Ltd. | Testing device and testing method |
| WO2014112215A1 (en) * | 2013-01-21 | 2014-07-24 | 住友電気工業株式会社 | Pressure resistance measuring apparatus and pressure resistance measuring method |
| CN106291264A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | The high-voltage detecting device of a kind of power electronic chip and high-voltage detecting method |
| CN113366346A (en) * | 2018-12-07 | 2021-09-07 | 卡尔蔡司Smt有限责任公司 | Wafer inspection system with wafer-terminated optics |
| CN116773994A (en) * | 2023-08-21 | 2023-09-19 | 珠海格力电子元器件有限公司 | Wafer test control method, control device, storage medium and electronic equipment |
-
2000
- 2000-11-21 JP JP2000354782A patent/JP2002158267A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610446B2 (en) | 2010-06-02 | 2013-12-17 | Fuji Electric Co., Ltd. | Testing device and testing method |
| WO2014112215A1 (en) * | 2013-01-21 | 2014-07-24 | 住友電気工業株式会社 | Pressure resistance measuring apparatus and pressure resistance measuring method |
| JP2014139965A (en) * | 2013-01-21 | 2014-07-31 | Sumitomo Electric Ind Ltd | Withstanding voltage measurement device and withstanding voltage measurement method |
| CN106291264A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | The high-voltage detecting device of a kind of power electronic chip and high-voltage detecting method |
| CN113366346A (en) * | 2018-12-07 | 2021-09-07 | 卡尔蔡司Smt有限责任公司 | Wafer inspection system with wafer-terminated optics |
| CN113366346B (en) * | 2018-12-07 | 2023-06-20 | 卡尔蔡司Smt有限责任公司 | Wafer inspection system with wafer end-capping optics |
| CN116773994A (en) * | 2023-08-21 | 2023-09-19 | 珠海格力电子元器件有限公司 | Wafer test control method, control device, storage medium and electronic equipment |
| CN116773994B (en) * | 2023-08-21 | 2023-12-01 | 珠海格力电子元器件有限公司 | Wafer test control method, control device, storage medium and electronic equipment |
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