JP2002141164A - Transistor inverter device for high-power and high- frequency induction heating - Google Patents
Transistor inverter device for high-power and high- frequency induction heatingInfo
- Publication number
- JP2002141164A JP2002141164A JP2000331633A JP2000331633A JP2002141164A JP 2002141164 A JP2002141164 A JP 2002141164A JP 2000331633 A JP2000331633 A JP 2000331633A JP 2000331633 A JP2000331633 A JP 2000331633A JP 2002141164 A JP2002141164 A JP 2002141164A
- Authority
- JP
- Japan
- Prior art keywords
- cooling water
- fins
- heat sink
- semiconductor switching
- inverter device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- General Induction Heating (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば各種ワークを焼
入する際に使用される大電力高周波誘導加熱用トランジ
スタインバータ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high power, high frequency induction heating transistor inverter device used, for example, for quenching various works.
【０００２】[0002]
【従来の技術】従来、各種半導体スイッチング素子を使
用したトランジスタインバータ装置においては、その主
回路としてのインバータ回路に用いられる半導体スイッ
チング素子を冷却するために、各種構造のヒートシンク
が使用されている。その代表的なものとしては、例えば
特開平１１−３４６４８０号公報に開示されているよう
に、インバータ主回路のＩＧＢＴモジュール、ブスバ
ー、コンデンサをヒートシンクの表面に接合して取り付
け、このヒートシンクの裏側に冷却水路を設けると共に
ヒートシンクの裏面にフィンを設けたインバータ装置が
提案されている。2. Description of the Related Art Conventionally, in a transistor inverter device using various semiconductor switching elements, heat sinks of various structures are used to cool the semiconductor switching elements used in the inverter circuit as a main circuit. As a typical example, as disclosed in Japanese Patent Application Laid-Open No. H11-346480, an IGBT module, a bus bar, and a capacitor of an inverter main circuit are bonded to a surface of a heat sink, and a cooling is provided on the back side of the heat sink. There has been proposed an inverter device having a water channel and a fin provided on the back surface of a heat sink.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、このイ
ンバータ装置にあっては、ヒートシンクの冷却水路の上
面（ＩＧＢＴ接合面の裏面）に、フィンを下方に向けて
所定寸法突出させているのみであるため、冷却水路を流
れる冷却水によるヒートシンクの冷却を効率的に行うこ
とが難しいという問題点があった。すなわち、冷却水路
の上面側を流れる冷却水は、フィンを冷却してヒートシ
ンクの冷却に寄与するものの、冷却水路の下面側を流れ
る冷却水は、そのままストレートに流れてフィンやヒー
トシンクの上面の冷却にほとんど寄与することがなく、
冷却効率が劣ることになる。However, in this inverter device, only the fin is projected downward by a predetermined size on the upper surface of the cooling water channel of the heat sink (the back surface of the IGBT joining surface). However, there is a problem that it is difficult to efficiently cool the heat sink by the cooling water flowing through the cooling water passage. In other words, while the cooling water flowing on the upper surface side of the cooling water channel cools the fins and contributes to the cooling of the heat sink, the cooling water flowing on the lower surface side of the cooling water channel flows straight and cools the upper surfaces of the fins and the heat sink. With little contribution,
The cooling efficiency will be poor.
【０００４】ところで、各種ワークの焼入や焼き抜き等
には、その出力が例えば数十ＫＷ〜数百ＫＷと大電力用
のトランジスタインバータ装置が使用されるが、このよ
うにトランジスタインバータ装置においては、大電力用
のＳＩＴ、ＦＥＴ、パワートランジスタ、ＩＧＢＴ等の
各種半導体スイッチング素子が使用されている。しか
し、この種の市場規模が極めて小さいことから、半導体
メーカにおいて、大電力用の半導体スイッチング素子の
製造がコスト的に採算が取れず、製造を中止しようとす
る動きがある。For the quenching and quenching of various works, a transistor inverter device having a large output of, for example, several tens to several hundreds of kW is used. Various types of semiconductor switching elements such as SITs, FETs, power transistors, and IGBTs for high power are used. However, since the size of this type of market is extremely small, there is a movement in semiconductor manufacturers to stop manufacturing the semiconductor switching element for high power because the cost is not profitable.
【０００５】そのため、インバータ装置のメーカは、例
えば中電力用の半導体スイッチング素子を使用して大電
力用のトランジスタインバータ装置を開発・製造する必
要があるが、その際、問題となるのが、半導体スイッチ
ング素子を如何に効率的に冷却して、その性能（出力特
性）を十分に引き出せるかどうかに掛かっているのが実
状である。For this reason, it is necessary for the maker of the inverter device to develop and manufacture a transistor inverter device for high power using, for example, a semiconductor switching element for medium power. In reality, it depends on how efficiently the switching element is cooled and its performance (output characteristics) can be sufficiently brought out.
【０００６】本発明は、このような事情に鑑みてなされ
たもので、その目的は、半導体スイッチング素子を効率
的に冷却してその性能を充分に発揮させることにより、
大電力用のインバータ回路が容易に得られる大電力用ト
ランジスタインバータ装置を提供することにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to efficiently cool a semiconductor switching element and sufficiently exhibit its performance.
An object of the present invention is to provide a high-power transistor inverter device in which a high-power inverter circuit can be easily obtained.
【０００７】[0007]
【課題を解決するための手段】かかる目的を達成すべ
く、本発明のうち請求項１記載の発明は、ヒートシンク
に取り付けられた複数の半導体スイッチング素子でその
主回路が形成されるインバータ回路を備え、該インバー
タ回路から出力される高周波電流によってワークを誘導
加熱する大電力高周波誘導加熱用トランジスタインバー
タ装置において、前記ヒートシンクは、半導体スイッチ
ング素子の接合面の裏側に冷却水の流路が形成されると
共に、該流路の少なくとも対向する壁面に互いに突出状
態でフィンをそれぞれ設けたことを特徴とする。また、
請求項２記載の発明は、前記フィンが、流路内の冷却水
の流通方向に沿って傾斜していることを特徴とする。In order to achieve the above object, the invention according to claim 1 of the present invention comprises an inverter circuit whose main circuit is formed by a plurality of semiconductor switching elements mounted on a heat sink. A high-frequency high-frequency induction heating transistor inverter device for inductively heating a workpiece by a high-frequency current output from the inverter circuit, wherein the heat sink has a cooling water flow path formed on the back side of a junction surface of the semiconductor switching element; Fins are provided on at least opposing wall surfaces of the flow path so as to protrude from each other. Also,
The invention according to claim 2 is characterized in that the fins are inclined along the flow direction of the cooling water in the flow path.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて詳細に説明する。図１及び図２は、本発明に
係わる大電力高周波誘導加熱用トランジスタインバータ
装置の一実施例を示し、図１がそのヒートシンク部分の
断面図、図２が図１のＡ−Ａ線矢視図である。Embodiments of the present invention will be described below in detail with reference to the drawings. 1 and 2 show one embodiment of a transistor inverter device for high-power high-frequency induction heating according to the present invention. FIG. 1 is a cross-sectional view of a heat sink portion, and FIG. 2 is a view taken along line AA of FIG. It is.
【０００９】図において、ヒートシンク１は、その表面
３ａ（接合面）にＳＩＴ、ＦＥＴ、ＩＧＢＴ等の大電力
もしくは中電力用の半導体スイッチング素子２の接合面
２ａが接合状態で取り付けられる素子接合板３と、この
素子接合板３と略同一形状に形成された下面板４と、素
子接合板３と下面板４の外周部を接合連結する平面視方
形状の側板５とで形成されている。In FIG. 1, a heat sink 1 has a surface 3a (bonding surface) to which a bonding surface 2a of a semiconductor switching element 2 for high power or medium power such as SIT, FET, IGBT or the like is mounted in a bonded state. And a lower plate 4 formed in substantially the same shape as the element bonding plate 3, and a side plate 5 having a rectangular shape in a plan view that joins and connects the outer peripheral portions of the element bonding plate 3 and the lower plate 4.
【００１０】この素子接合板３、下面板４及び側板５に
よって、ヒートシンク１の内部には冷却水の流路６が形
成されており、前記側板５の対向する壁面には冷却水供
給口７と冷却水排出口８が設けられている。この冷却水
供給口７と冷却水排水口８には、適宜配水管９、１０が
接続され、この配水管９、１０は冷却装置１１に接続さ
れている。この冷却装置１１で冷却された冷却水が配水
管９を介してヒートシンク１の流路６内に供給される。
なお、冷却装置１１には、バルブ１２を介して冷却水供
給源１３が接続されている。また、前記素子接合板３、
下面板４及び側板５は、アルミニウム板か銅板等によっ
て形成され、その連結部がロウ付け等で固着されてい
る。A cooling water flow path 6 is formed inside the heat sink 1 by the element bonding plate 3, the lower surface plate 4, and the side plate 5, and a cooling water supply port 7 is formed on an opposing wall surface of the side plate 5. A cooling water outlet 8 is provided. Water distribution pipes 9 and 10 are connected to the cooling water supply port 7 and the cooling water discharge port 8 as appropriate, and the water distribution pipes 9 and 10 are connected to a cooling device 11. The cooling water cooled by the cooling device 11 is supplied into the flow path 6 of the heat sink 1 via the water pipe 9.
Note that a cooling water supply source 13 is connected to the cooling device 11 via a valve 12. Further, the element bonding plate 3,
The lower surface plate 4 and the side plate 5 are formed of an aluminum plate, a copper plate, or the like, and a connection portion thereof is fixed by brazing or the like.
【００１１】そして、ヒートシンク１の素子接合板３の
裏面３ｂと下面板４の内面４ａには、複数のフィン１
４、１５が一体的に固着されている。すなわち、素子接
合板３の裏面３ｂには、下方に垂直に所定寸法突出する
状態でフィン１４が固着され、下面板４の内面４ａに
は、前記フィン１４間に位置する状態でかつ上方に垂直
に所定寸法突出する状態でフィン１５が固着されてい
る。これらのフィン１４、１５は、素子接合板３や下面
板４と同材質の板によって形成され、例えばロウ付け等
により各板３、４に一体化されている。なお、フィン１
４、１５の突出寸法は略同一に設定されており、これに
より流路６がジグザグ状に形成されている。A plurality of fins 1 are provided on the back surface 3 b of the element bonding plate 3 of the heat sink 1 and the inner surface 4 a of the lower plate 4.
4 and 15 are integrally fixed. That is, the fins 14 are fixed to the back surface 3b of the element bonding plate 3 so as to project vertically downward by a predetermined dimension, and the inner surface 4a of the lower surface plate 4 is positioned between the fins 14 and vertically upward. The fin 15 is fixed in such a manner as to protrude by a predetermined dimension. These fins 14 and 15 are formed of a plate of the same material as the element bonding plate 3 and the lower plate 4 and are integrated with the plates 3 and 4 by, for example, brazing. In addition, fin 1
The protrusion dimensions of 4 and 15 are set to be substantially the same, whereby the flow path 6 is formed in a zigzag shape.
【００１２】このヒートシンク１によれば、半導体スイ
ッチング素子２を所定の条件で作動させる際に、冷却装
置１１を作動させてヒートシンク１の流路６内に冷却水
を供給する。この冷却水により、フィン１４やフィン１
４間の素子接合板３の裏面３ｂが冷却されて、素子接合
板３の表面３ａが冷却される。この素子接合板３の表面
３ａの冷却により、作動（オン・オフ）による通電で温
度上昇する半導体スイッチング素子２の接合面２ａが冷
却、すなわち通電中の半導体スイッチング素子２が冷却
される。According to the heat sink 1, when the semiconductor switching element 2 is operated under predetermined conditions, the cooling device 11 is operated to supply cooling water into the flow path 6 of the heat sink 1. With this cooling water, the fins 14 and the fins 1
The back surface 3b of the element bonding plate 3 between the four is cooled, and the front surface 3a of the element bonding plate 3 is cooled. By cooling the surface 3a of the element bonding plate 3, the bonding surface 2a of the semiconductor switching element 2 whose temperature rises due to energization by operation (on / off) is cooled, that is, the energized semiconductor switching element 2 is cooled.
【００１３】この半導体スイッチング素子２の冷却時
に、流路６内を冷却装置１１で所定温度に維持された冷
却水が流通すると共に、冷却流路６内にフィン１４、１
５が設けられているため、このフィン１４、１５が冷却
水によって冷却されて、素子接合板３の冷却効率が高め
られる。特に、フィン１４、１５が素子接合板３の裏面
３ｂと下面板４の内面４ａに互いに突出する方向に設け
られていることから、フイン１５で冷却水がフィン１４
側に指向する流れ、すなわち流路６内の冷却水がフィン
１４、１５でストレートな流れが阻害されつつジクザグ
状に流れ、フィン１４、１５と冷却水の接触時間が長く
なって、フィン１４、１５（つまり素子接合板３）がよ
り効率的に冷却されることになる。When the semiconductor switching element 2 is cooled, cooling water maintained at a predetermined temperature by the cooling device 11 flows through the flow path 6 and the fins 14 and 1
Since the fins 5 are provided, the fins 14 and 15 are cooled by the cooling water, and the cooling efficiency of the element bonding plate 3 is increased. In particular, since the fins 14 and 15 are provided on the back surface 3b of the element bonding plate 3 and the inner surface 4a of the lower plate 4 so as to protrude from each other, the cooling water is
The flow directed to the side, that is, the cooling water in the flow path 6 flows in a zigzag manner while the straight flow is hindered by the fins 14 and 15, and the contact time of the cooling water with the fins 14 and 15 increases, 15 (that is, the element bonding plate 3) is more efficiently cooled.
【００１４】そして、ヒートシンク１で半導体スイッチ
ング素子２が効率的に冷却されることにより、通電時の
半導体スイッチング素子２の発熱が抑えられ、その能力
が充分に発揮されて出力定格に近い出力が容易に得ら
れ、例えば中電力用の半導体スイッチング素子２を使用
したインバータ回路に、従来では得られない大電力出力
を得ることができる。Further, since the semiconductor switching element 2 is efficiently cooled by the heat sink 1, heat generation of the semiconductor switching element 2 at the time of energization is suppressed, and the ability is sufficiently exhibited to easily output near the output rating. For example, a high power output that cannot be obtained conventionally can be obtained in an inverter circuit using the semiconductor switching element 2 for medium power.
【００１５】図３〜図６は、本発明に係わるヒートシン
クのそれぞれ他の実施例を示している。以下、上記実施
例と同一部位には同一符号を付して説明する。先ず、図
３に示すヒートシンク１の特徴は、前記下面板４に側板
５を一体化して上面が開口した箱形状に形成すると共
に、素子接合板３の裏面３ｂ及び下面板４の内面４ａか
ら突出するフィン１４、１５の突出高さを前記高さより
高くした点にある。このヒートシンク１は、フィン１
４、１５の突出高さが互いにラップすることから、冷却
水の流路６がよりジグザグ状に形成されることになる。FIGS. 3 to 6 show other embodiments of the heat sink according to the present invention. Hereinafter, the same portions as those in the above-described embodiment will be described by assigning the same reference numerals. First, the heat sink 1 shown in FIG. 3 is characterized in that the side plate 5 is integrated with the lower surface plate 4 to form a box shape having an open upper surface, and that the heat sink 1 projects from the back surface 3b of the element bonding plate 3 and the inner surface 4a of the lower surface plate 4. The point is that the protruding heights of the fins 14 and 15 are higher than the above-mentioned heights. This heat sink 1 has a fin 1
Since the protruding heights of the projections 4 and 15 overlap each other, the flow path 6 of the cooling water is formed in a more zigzag shape.
【００１６】また、図４に示すヒートシンク１の特徴
は、フィン１４、１５をその長手方向において分割した
点にある。この分割方法としては、図４の左半分に示す
ように、比較的細かく分割しても良いし、図４の右半分
に示すように、比較的大きく分割することもできるし、
フィン１４、１５の高さ方向の所定位置にスリットを設
けることで分割状態とする等、適宜の分割構造を採用す
ることができる。The heat sink 1 shown in FIG. 4 is characterized in that the fins 14 and 15 are divided in the longitudinal direction. This division method may be a relatively fine division as shown in the left half of FIG. 4, a relatively large division as shown in the right half of FIG.
An appropriate division structure can be adopted, for example, by providing a slit at a predetermined position in the height direction of the fins 14 and 15 so as to divide the fins 14 and 15 into divided states.
【００１７】さらに、図５に示すヒートシンク１の特徴
は、フィン１４、１５を流路６の冷却水の流通方向に沿
って傾斜して設けたものであり、この場合のフィン１
４、１５の傾斜方向は、実線で示すように、流通方向に
向かって傾斜させたり、二点鎖線で示すように、反流通
方向に向かって傾斜させることができる。また、この実
施例の場合、二点鎖線で示すように、各フィン１４、１
５を円弧形状に形成したり、この各フィン１４、１５の
傾斜角度や各板３、４に対する固定位置を適宜に異なら
せること等により、流通方向に略螺旋状の流路６が形成
されるように構成することもできる。Further, a feature of the heat sink 1 shown in FIG. 5 is that the fins 14 and 15 are provided so as to be inclined along the flow direction of the cooling water in the flow path 6.
The inclination directions of 4 and 15 can be inclined toward the distribution direction as shown by the solid line, or can be inclined toward the anti-flow direction as shown by the two-dot chain line. Further, in the case of this embodiment, as shown by a two-dot chain line, each fin 14, 1
5 is formed in a circular arc shape, or the angle of inclination of each of the fins 14 and 15 and the fixing position of each of the fins 3 and 4 are appropriately changed. It can also be configured as follows.
【００１８】また、図６に示すヒートシンク１の特徴
は、フィン１４、１５を冷却水の流通方向に直交する方
向ではなく、流通方向と略並行に設けたものである。こ
れらの各実施例においても、フィン１４、１５で流路６
内にジクザグ状の流路が形成され、フィン１４、１５を
介した素子接合板３の冷却効率を高めることができる。A feature of the heat sink 1 shown in FIG. 6 is that the fins 14 and 15 are provided not in a direction perpendicular to the flowing direction of the cooling water but in a direction substantially parallel to the flowing direction. In each of these embodiments, the fins 14 and 15 also
A zigzag flow path is formed in the inside, and the cooling efficiency of the element bonding plate 3 via the fins 14 and 15 can be increased.
【００１９】なお、本発明は、上記した各実施例のそれ
ぞれに限定されるものでもなく、例えば図６に示す実施
例において、図４に示す実施例と同様にフィン１４、１
５を複数に分割する等、各実施例を適宜に組み合わせる
ことができる。また、流路６内に冷却水を供給したり排
出する冷却水供給口７と冷却水排出口８の位置も、上記
各実施例に限定されず、例えば図１の二点鎖線で示すよ
うに下面板４に設けたり、図２に示すように側板５に複
数箇所設けたり、あるいは図６に示すように側板５の斜
めに対向する位置に設けて良い。さらに、上記各実施例
において、複数のフィン１４、１５の形状を異ならせた
り、例えば側板５に水平方向に突出するフィン１４、１
５を設けることもできる。It should be noted that the present invention is not limited to each of the above-described embodiments. For example, in the embodiment shown in FIG.
Each of the embodiments can be appropriately combined, such as dividing 5 into a plurality. Further, the positions of the cooling water supply port 7 and the cooling water discharge port 8 for supplying and discharging the cooling water into and from the flow path 6 are not limited to those in the above-described embodiments. It may be provided on the lower plate 4, may be provided on the side plate 5 at a plurality of positions as shown in FIG. Further, in each of the above embodiments, the shapes of the plurality of fins 14 and 15 may be changed, or the fins 14 and
5 can also be provided.
【００２０】[0020]
【発明の効果】以上詳述したように、請求項１記載の発
明によれば、半導体スイッチング素子が接合されるヒー
トシンクの裏面に冷却水の流路を形成すると共に、この
流路の対向する壁面からフィンを互いに突出させて設け
ているため、流路内を流通する冷却水の各フィンに対す
る接触面積を大きくできて、冷却水によりヒートシンク
を効率的に冷却することができる。その結果、半導体ス
イッチング素子の能力を最大限に発揮できて、大電力用
のトランジスタインバータ装置を容易に得ることが可能
になる。As described in detail above, according to the first aspect of the present invention, the cooling water flow path is formed on the back surface of the heat sink to which the semiconductor switching element is joined, and the opposite wall surface of the flow path is formed. Since the fins are provided so as to protrude from each other, the contact area of the cooling water flowing in the flow path with each fin can be increased, and the heat sink can be efficiently cooled by the cooling water. As a result, the performance of the semiconductor switching element can be maximized, and a high power transistor inverter device can be easily obtained.
【００２１】また、請求項２記載の発明によれば、請求
項１記載の発明の効果に加え、フィンが冷却水の流路内
において冷却水の流路方向に沿って傾斜しているため、
例えば傾斜状態によって冷却水の流通速度を調整できる
等、その流通状態を最適な状態に設定することができ
て、半導体スイッチング素子の冷却効率をより向上させ
ることができる等の効果を奏する。According to the second aspect of the invention, in addition to the effect of the first aspect, the fins are inclined along the flow direction of the cooling water in the flow path of the cooling water.
For example, the flow rate of the cooling water can be adjusted according to the inclined state, and the flow state can be set to an optimum state, so that the cooling efficiency of the semiconductor switching element can be further improved.
【図１】本発明に係わる大電力トランジスタインバータ
装置の一実施例を示すヒートシンク部分の断面図FIG. 1 is a cross-sectional view of a heat sink showing an embodiment of a high-power transistor inverter device according to the present invention.
【図２】同図１のＡ−Ａ線矢視図FIG. 2 is a view taken on line AA of FIG. 1;
【図３】本発明の他の実施例を示す図１と同様の断面図FIG. 3 is a sectional view similar to FIG. 1, showing another embodiment of the present invention;
【図４】本発明のさらに他の実施例を示す図２と同様の
断面図FIG. 4 is a sectional view similar to FIG. 2, showing still another embodiment of the present invention.
【図５】本発明のさらに他の実施例を示す図１と同様の
断面図FIG. 5 is a sectional view similar to FIG. 1, showing still another embodiment of the present invention.
【図６】本発明のさらに他の実施例を示す図２と同様の
断面図FIG. 6 is a sectional view similar to FIG. 2, showing still another embodiment of the present invention.
１ ヒートシンク ２ 半導体スイッチング素子 ２ａ 接合面 ３ 素子接合板 ３ａ 表面 ３ｂ 裏面 ４ 下面板 ４ａ 内面 ５ 側板 ６ 流路 ７ 冷却水供給口 ８ 冷却水排出口 １１ 冷却装置 １４、１５ フィン DESCRIPTION OF SYMBOLS 1 Heat sink 2 Semiconductor switching element 2a Joining surface 3 Element joining plate 3a Front surface 3b Back surface 4 Lower plate 4a Inner surface 5 Side plate 6 Flow path 7 Cooling water supply port 8 Cooling water discharge port 11 Cooling device 14, 15 Fin
Claims (2)
体スイッチング素子でその主回路が形成されるインバー
タ回路を備え、該インバータ回路から出力される高周波
電流によってワークを誘導加熱する大電力高周波誘導加
熱用トランジスタインバータ装置において、前記ヒート
シンクは、半導体スイッチング素子の接合面の裏側に冷
却水の流路が形成されると共に、該流路の少なくとも対
向する壁面に互いに突出状態でフィンをそれぞれ設けた
ことを特徴とする大電力高周波誘導加熱用トランジスタ
インバータ装置。1. A high-power high-frequency induction heating transistor that includes an inverter circuit whose main circuit is formed by a plurality of semiconductor switching elements mounted on a heat sink, and that induction-heats a workpiece by a high-frequency current output from the inverter circuit. In the inverter device, the heat sink has a cooling water flow path formed on the back side of a bonding surface of the semiconductor switching element, and fins are provided on at least opposing wall surfaces of the flow path so as to protrude from each other. High power high frequency induction heating transistor inverter device.
に沿って傾斜していることを特徴とする請求項１記載の
大電力高周波誘導加熱用トランジスタインバータ装置。2. The high power high frequency induction heating transistor inverter device according to claim 1, wherein said fins are inclined along a flow direction of the cooling water in the flow path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331633A JP2002141164A (en) | 2000-10-31 | 2000-10-31 | Transistor inverter device for high-power and high- frequency induction heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331633A JP2002141164A (en) | 2000-10-31 | 2000-10-31 | Transistor inverter device for high-power and high- frequency induction heating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002141164A true JP2002141164A (en) | 2002-05-17 |
Family
ID=18807945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000331633A Pending JP2002141164A (en) | 2000-10-31 | 2000-10-31 | Transistor inverter device for high-power and high- frequency induction heating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002141164A (en) |
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