JP2002111440A - Elastic surface wave device - Google Patents
Elastic surface wave deviceInfo
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- JP2002111440A JP2002111440A JP2000300224A JP2000300224A JP2002111440A JP 2002111440 A JP2002111440 A JP 2002111440A JP 2000300224 A JP2000300224 A JP 2000300224A JP 2000300224 A JP2000300224 A JP 2000300224A JP 2002111440 A JP2002111440 A JP 2002111440A
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- Prior art keywords
- wave device
- substrate
- insulating substrate
- acoustic wave
- surface acoustic
- Prior art date
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、携帯電話及び自動
車電話等の移動体無線機器に内蔵される共振器及び周波
数帯域フィルタ用の弾性表面波装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device for a resonator and a frequency band filter incorporated in a mobile radio device such as a cellular phone and a car phone.
【０００２】[0002]
【従来技術とその課題】従来の弾性表面波（Surface Ac
oustic Wave、以下ＳＡＷと略す）装置の模式的な平面
図を図４に、その端面図を図５に、及びその底面図を図
６に示す。図５に示す弾性表面波装置において、５１は
圧電基板、５２は接地電極のパッド、５３はＳＡＷ素子
用の圧電基板上に形成された櫛形電極のＩＤＴ（Inter
DigitalTransducer）電極（励振電極）、５４は絶縁性
基板であるパッケージ５７に形成された導電パターン、
５５は接続用のバンプである。同図の構成では、パッド
５２及びＩＤＴ電極５３を例えばＡｌ−Ｃｕ膜で形成
し、導電パターン５４、パッド５２を例えばＡｕバンプ
により電気的に接続している。さらに蓋体５６をシーム
溶接等によりパッケージ５７上から封止して気密を保っ
ている。2. Description of the Related Art Conventional surface acoustic waves (Surface Ac
FIG. 4 is a schematic plan view of the oustic wave (hereinafter abbreviated as SAW) device, FIG. 5 is an end view thereof, and FIG. 6 is a bottom view thereof. In the surface acoustic wave device shown in FIG. 5, reference numeral 51 denotes a piezoelectric substrate, reference numeral 52 denotes a ground electrode pad, and reference numeral 53 denotes a comb-shaped electrode IDT (Inter) formed on a piezoelectric substrate for a SAW element.
DigitalTransducer) electrodes (excitation electrodes), 54 is a conductive pattern formed on a package 57 which is an insulating substrate,
55 is a connection bump. In the configuration of FIG. 3, the pad 52 and the IDT electrode 53 are formed of, for example, an Al—Cu film, and the conductive pattern 54 and the pad 52 are electrically connected by, for example, an Au bump. Further, the lid 56 is sealed from above the package 57 by seam welding or the like to maintain airtightness.
【０００３】このようなフェースダウン構造における帯
域外減衰量レベル劣化の主原因は、ＳＡＷ素子、絶縁性
基板の電極電気抵抗、寄生インダクタンス、浮遊容量に
起因する入出力間の電磁的結合である。図５に示す構造
の場合、ＩＤＴ電極と対向（対面）する絶縁性基板の接
地電極間に浮遊容量が発生し、帯域外減衰量レベルが劣
化してしまう。The main cause of the deterioration of the out-of-band attenuation level in such a face-down structure is electromagnetic coupling between the input and output due to the SAW element, the electrical resistance, the parasitic inductance, and the stray capacitance of the insulating substrate. In the case of the structure shown in FIG. 5, a stray capacitance is generated between the ground electrode of the insulating substrate facing (facing) the IDT electrode, and the out-of-band attenuation level is deteriorated.
【０００４】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は本発明の目的は、フェース
ダウン接続構造をもつ弾性表面波装置において、高周波
側の帯域外減衰量を向上させることができ、信頼性に優
れた弾性表面波装置を提供することである。Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to improve the out-of-band attenuation on the high frequency side in a surface acoustic wave device having a face-down connection structure. It is an object of the present invention to provide a surface acoustic wave device which can be made to be excellent in reliability.
【０００５】[0005]
【課題を解決するための手段】本発明の弾性波装置は、
主面に励振電極を形成した圧電基板を、信号用及び接地
用の導体パターンが表裏に形成されている絶縁性基板に
配設し、前記励振電極と前記導電パターンとを接続させ
て成り、前記絶縁性基板の表面には前記導体パターンが
基板外周部にのみ形成されているとともに、前記絶縁性
基板の表面中央部に前記圧電基板の励振電極形成面を対
面させていることを特徴とする。また、特に、前記絶縁
性基板の裏面中央部に、前記接地用の導体パターンが前
記信号用の導体パターンに挟まれて対称的に形成されて
いることを特徴とする。An elastic wave device according to the present invention comprises:
A piezoelectric substrate having an excitation electrode formed on the main surface is disposed on an insulating substrate on which signal and ground conductor patterns are formed on the front and back, and the excitation electrode and the conductive pattern are connected to each other. The conductive pattern is formed only on the outer peripheral portion of the surface of the insulating substrate, and the excitation electrode forming surface of the piezoelectric substrate faces the center of the surface of the insulating substrate. Further, in particular, the conductor pattern for grounding is formed symmetrically at the center of the back surface of the insulating substrate so as to be sandwiched between the conductor patterns for signal.
【０００６】[0006]
【発明の実施の形態】以下、本発明に係る弾性表面波装
置の実施形態について模式的にあらわした図面に基づき
詳細に説明する。図１は弾性表面波装置の平面図、図２
はその端面図、及び図３はその底面図を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a surface acoustic wave device according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view of a surface acoustic wave device, and FIG.
Shows an end view thereof, and FIG. 3 shows a bottom view thereof.
【０００７】図２に示す弾性表面波装置において、１は
圧電基板、２は接地電極のパッド、３は圧電基板１を接
着固定する絶縁性基板、４は絶縁性基板３の接地電極の
導電パターン、５はＳＡＷ素子用の圧電基板１上に形成
された櫛歯状電極のＩＤＴ電極である。同図の構成で
は、パッド２、４及びＩＤＴ電極５をＡｌ−Ｃｕ膜で形
成し、パッド２、導電パターン４をＡｕ等からなるバン
プ接続体６により電気的に接続している。３はセラミッ
ク等からなる絶縁性基板、７はセラミック等からなる蓋
体である。８は絶縁性基板３と蓋体７を接続する絶縁性
樹脂である。なお、絶縁性基板３は、例えばセラミック
基板によって作製するか、または樹脂、ガラス等の基板
によって形成する。In the surface acoustic wave device shown in FIG. 2, 1 is a piezoelectric substrate, 2 is a pad of a ground electrode, 3 is an insulating substrate for bonding and fixing the piezoelectric substrate 1, and 4 is a conductive pattern of the ground electrode of the insulating substrate 3. Reference numerals 5 and 5 denote IDT electrodes of comb-like electrodes formed on the piezoelectric substrate 1 for the SAW element. In the configuration shown in FIG. 1, the pads 2 and 4 and the IDT electrode 5 are formed of an Al-Cu film, and the pad 2 and the conductive pattern 4 are electrically connected by a bump connector 6 made of Au or the like. Reference numeral 3 denotes an insulating substrate made of ceramic or the like, and reference numeral 7 denotes a lid made of ceramic or the like. Reference numeral 8 denotes an insulating resin that connects the insulating substrate 3 and the lid 7. The insulating substrate 3 is made of, for example, a ceramic substrate or a resin, glass, or other substrate.
【０００８】前記弾性表面波装置は、圧電基板１上に互
いに噛み合うように形成された少なくとも一対の櫛歯状
電極のＩＤＴ電極５を設けることにより構成される。Ｉ
ＤＴ電極５は、所望の特性を得るために複数対の櫛歯状
電極を直列接続、並列接続等の各種の方式で接続して構
成してもよい。このＩＤＴ電極５は蒸着法、スパッタリ
ング法又はCVD法等の薄膜形成法により形成する。The surface acoustic wave device is constituted by providing at least a pair of IDT electrodes 5 of comb-like electrodes formed on a piezoelectric substrate 1 so as to mesh with each other. I
The DT electrode 5 may be configured by connecting a plurality of pairs of comb-shaped electrodes by various methods such as series connection and parallel connection in order to obtain desired characteristics. The IDT electrode 5 is formed by a thin film forming method such as a vapor deposition method, a sputtering method, or a CVD method.
【０００９】絶縁性基板３のパッド電極４と圧電基板１
のパッド電極２上に設けられバンプ接続体６との接続
は、超音波熱圧着併用法等で行われる。そして、セラミ
ック等からなる蓋体８を絶縁性基板３に接着固定して、
弾性表面波装置を完成する。The pad electrode 4 of the insulating substrate 3 and the piezoelectric substrate 1
The connection with the bump connector 6 provided on the pad electrode 2 is performed by an ultrasonic thermocompression combination method or the like. Then, the lid 8 made of ceramic or the like is bonded and fixed to the insulating substrate 3,
Complete the surface acoustic wave device.
【００１０】絶縁性パッケージ３は、セラミック基板を
エッチング法、フォトリソグラフィ法とエッチング法、
機械的研削法又はレーザー加工法等により加工して、作
製するか、または、セラミック基板と枠上セラミック基
板とを積層することよって作製する。または、樹脂、ガ
ラス等の基板の一主面を、同様にエッチング法、フォト
リソグラフィ法とエッチング法、機械的研削法又はレー
ザー加工法等により加工して、凹部を容易に形成でき
る。The insulating package 3 is formed by etching a ceramic substrate, photolithography and etching,
It is manufactured by processing by a mechanical grinding method, a laser processing method, or the like, or is manufactured by laminating a ceramic substrate and a ceramic substrate on a frame. Alternatively, a concave portion can be easily formed by processing one main surface of a substrate such as a resin or glass by an etching method, a photolithography method and an etching method, a mechanical grinding method, a laser processing method, or the like.
【００１１】図２において、振動空間内に低湿度の空気
を封入し密閉することにより、ＩＤＴ電極５の酸化によ
る劣化を抑制でき好ましい。また、空気の代わりに、窒
素ガス、アルゴンガスなどの不活性ガス等を封入し密閉
しても同様な効果が得られる。In FIG. 2, it is preferable to seal low-humidity air in the vibrating space and to seal it, so that deterioration of the IDT electrode 5 due to oxidation can be suppressed. The same effect can be obtained by enclosing and sealing an inert gas such as nitrogen gas or argon gas instead of air.
【００１２】図３に示すように、裏面のフットパターン
の接地電極間を接続する構造とした場合、接地電極４ａ
の線幅ａを大きくとりすぎると、隣接する端子との距離
が短くなり、絶縁性基板を外部回路にはんだを介して接
続する際などにはんだ流れが生じ、これにより他の端子
と短絡することがあるので、信号用の導体パターン４ｂ
における入出力端子線幅ｂに対してａ＜ｂとするとよ
い。また、例えばパッケージの大きさを２．５ｍｍ×
２．０ｍｍのパッケージの場合、ａは０．０８〜０．５
ｍｍとし、接地用導体パターンと信号用導体パターンの
間隔ｃを０．１５〜０．６ｍｍとするとよいことがわか
った。As shown in FIG. 3, in the case where the ground electrode of the foot pattern on the back surface is connected, the ground electrode 4a
If the line width a is too large, the distance between adjacent terminals will be short, and solder flow will occur when the insulating substrate is connected to an external circuit via solder, which may cause a short circuit with other terminals. The conductor pattern 4b for signal
A <b with respect to the input / output terminal line width b. Also, for example, the size of the package is 2.5 mm ×
In the case of a 2.0 mm package, a is 0.08 to 0.5.
mm and the distance c between the grounding conductor pattern and the signal conductor pattern should be 0.15 to 0.6 mm.
【００１３】本発明において、ＩＤＴ電極５はＡｌ−Ｃ
ｕ系のＡｌ合金からなる。そして、ＩＤＴ電極５の対数
は５０〜２００程度、電極指の幅は０．１〜１０．０μ
ｍ程度、電極指の間隔は０．１〜１０．０μｍ程度、電
極指の交差幅は１０〜８０μｍ程度、ＩＤＴ電極５の厚
みは０．２〜０．４μｍ程度とすることが、共振器ある
いはフィルタとしての所期の特性を得るうえで好適であ
る。また、ＩＤＴ電極５のＳＡＷの伝搬路の両端に、Ｓ
ＡＷを反射し効率よく共振させるための反射器を設けて
もよい。In the present invention, the IDT electrode 5 is made of Al-C
It is made of a u-based Al alloy. The logarithm of the IDT electrode 5 is about 50 to 200, and the width of the electrode finger is 0.1 to 10.0 μm.
m, the electrode finger spacing is about 0.1 to 10.0 μm, the electrode finger cross width is about 10 to 80 μm, and the thickness of the IDT electrode 5 is about 0.2 to 0.4 μm. It is suitable for obtaining desired characteristics as a filter. In addition, at both ends of the SAW propagation path of the IDT electrode 5, S
A reflector for reflecting the AW and efficiently causing resonance may be provided.
【００１４】ＳＡＷ素子用の圧電基板としては、３６°
Ｙカット−Ｘ伝搬のＬｉＴａＯ３結晶、６４°Ｙカット
−Ｘ伝搬のＬｉＮｂＯ３結晶、４５°Ｘカット−Ｚ伝搬
のＬｉＢ４Ｏ７結晶は電気機械結合係数が大きく且つ群
遅延時間温度係数が小さいため好ましい。A 36 ° piezoelectric substrate for a SAW element
The Y-cut X-propagating LiTaO 3 crystal, the 64 ° Y-cut X-propagating LiNbO 3 crystal, and the 45 ° X-cut-Z propagating LiB 4 O 7 crystal are preferable because of their large electromechanical coupling coefficient and small group delay time temperature coefficient.
【００１５】上述したように、本発明の弾性表面波装置
は、主面に励振電極５を形成した圧電基板１を、信号用
及び接地用の導体パターン４が表裏に形成されている絶
縁性基板３に配設し、励振電極５と導電パターン４とを
接続させて成り、絶縁性基板３の表面には導体パターン
４が絶縁性基板３の外周部にのみ形成されている。ま
た、絶縁性基板３の表面中央部に圧電基板１の励振電極
５の形成面を対面させている。また、特に、絶縁性基板
３の裏面中央部に、共通化通された接地用の導体パター
ン４ａが１対の入出力用（信号用）の導体パターン４ｂ
に挟まれて対称的に形成されている。As described above, in the surface acoustic wave device of the present invention, the piezoelectric substrate 1 having the excitation electrode 5 formed on the main surface is replaced with the insulating substrate on which the signal and ground conductor patterns 4 are formed on the front and back. The conductive pattern 4 is formed only on the outer peripheral portion of the insulating substrate 3 on the surface of the insulating substrate 3. Further, the surface on which the excitation electrode 5 of the piezoelectric substrate 1 is formed faces the center of the surface of the insulating substrate 3. In particular, a pair of common conductor patterns 4a for grounding are provided at the center of the back surface of the insulating substrate 3 with a pair of input / output (signal) conductor patterns 4b.
Are formed symmetrically.
【００１６】かくして、絶縁性基板３における励振電極
５と対向（対面）する領域に、接地電極パッドが存在せ
ず、絶縁性基板３の裏面にフットパターンの接地電極が
全て接続された構造にしているので、励振電極５の入力
信号が接地電極を介して出力側へ伝達されることがなく
減衰量が劣化することがない、これにより、従来よりも
帯域外減衰量レベルが向上し、絶縁性基板３の裏面の接
地電極パターンによるＳＡＷ素子のシールドが充分に機
能する。Thus, there is no ground electrode pad in the region of the insulating substrate 3 facing (facing) the excitation electrode 5, and the ground electrode of the foot pattern is all connected to the back surface of the insulating substrate 3. Therefore, the input signal of the excitation electrode 5 is not transmitted to the output side via the ground electrode, so that the attenuation does not deteriorate. As a result, the out-of-band attenuation level is improved as compared with the conventional case, The shield of the SAW element by the ground electrode pattern on the back surface of the substrate 3 functions sufficiently.
【００１７】さらに、圧電基板と実装基板とをフェイス
ダウンでフリップチップ実装化して、小型・低背化をは
かった構造においては、バンプの高さと圧電基板の厚さ
によって高さ方向のサイズは規定される。高さを最小化
することにより、いっそうの弾性表面波装置の低背化が
はかれる。Further, in a structure in which the piezoelectric substrate and the mounting substrate are flip-chip mounted face down to reduce the size and height, the size in the height direction is defined by the height of the bumps and the thickness of the piezoelectric substrate. Is done. By minimizing the height, the height of the surface acoustic wave device can be further reduced.
【００１８】また、絶縁性基板３の裏面中央部に、接地
用の導体パターン４ａが信号用の導体パターン４ｂに挟
まれて形成されているので、弾性表面波装置を信頼性よ
く安定して外部回路に接続することができる。Further, since the grounding conductor pattern 4a is formed in the center of the back surface of the insulating substrate 3 so as to be sandwiched between the signal conductor patterns 4b, the surface acoustic wave device can be reliably and stably externally mounted. Can be connected to a circuit.
【００１９】なお、本発明は上記の実施形態に限定され
るものではなく、本発明の要旨を逸脱しない範囲内で変
更・改良を施すことは何ら差し支えない。It should be noted that the present invention is not limited to the above-described embodiment, and that changes and improvements can be made without departing from the scope of the present invention.
【００２０】[0020]
【実施例】図２は本発明の実施例における弾性表面波装
置の概略を表す端面図である。FIG. 2 is an end view schematically showing a surface acoustic wave device according to an embodiment of the present invention.
【００２１】本実施例では、ＳＡＷ素子用の圧電基板と
して３６°Ｙカット−Ｘ伝搬のＬｉＴａＯ３単結晶を用
い、そのチップサイズは、０．９ｍｍ×１．０ｍｍ、厚
さ３５０μｍとした。圧電基板１と接続する絶縁性基板
３として、サイズ３０ｍｍ×３０ｍｍのアルミナ製セラ
ミックスを使用した。また、絶縁性基板３との導電パタ
ーン４を合計１μｍ膜厚のＡｕ及びＮｉを無電解めっき
にて形成した。絶縁性基板３の導電パターン４とＳＡＷ
素子の接地電極２との接続には、超音波熱圧着併用法を
用いて、バンプ接続体６を介して接着固定した。In this embodiment, a 36 ° Y-cut X-propagation LiTaO3 single crystal was used as a piezoelectric substrate for a SAW element, and the chip size was 0.9 mm × 1.0 mm and the thickness was 350 μm. As the insulating substrate 3 connected to the piezoelectric substrate 1, an alumina ceramic having a size of 30 mm × 30 mm was used. Further, a conductive pattern 4 with the insulating substrate 3 was formed by electroless plating Au and Ni with a total thickness of 1 μm. Conductive pattern 4 on insulating substrate 3 and SAW
The element was connected to the ground electrode 2 using an ultrasonic thermocompression bonding method and bonded and fixed via the bump connector 6.
【００２２】最後に、アルミナ製セラミックスからなる
蓋体９を絶縁性樹脂１０により接着固定して弾性表面波
装置を完成した。Finally, a lid 9 made of alumina ceramics was bonded and fixed with an insulating resin 10 to complete a surface acoustic wave device.
【００２３】このような工程で作製した弾性表面波装置
の高さは、１．０ｍｍであった。以上のように、従来の
ワイヤボンディング工程が不要となり、ワイヤの横方向
の空間及びワイヤの高さ方向のサイズを縮小でき、小型
化、低背化を図ることができた。The height of the surface acoustic wave device manufactured in such a process was 1.0 mm. As described above, the conventional wire bonding step becomes unnecessary, and the space in the lateral direction of the wire and the size in the height direction of the wire can be reduced, and the size and height can be reduced.
【００２４】ＲＦ−ＳＡＷフィルターを従来のセラミッ
クパッケージに実装するとベアチップエレメントと比較
して高周波側の減衰量が著しく劣化する。また、通過帯
域内の低周波側の減衰特性がフィルター仕様により劣化
することがある。これは、パッケージ及びＡｕワイヤの
インダクタンス成分による影響と考えられる。フリップ
チップ実装を適用することにより、ベアチップエレメン
ト特性に近いフィルターの周波数特性が得られると考え
られる。When the RF-SAW filter is mounted on a conventional ceramic package, the attenuation on the high frequency side is significantly deteriorated as compared with the bare chip element. Further, the attenuation characteristic on the low frequency side in the pass band may be deteriorated by the filter specification. This is considered to be the effect of the inductance components of the package and the Au wire. It is considered that the frequency characteristics of the filter close to the bare chip element characteristics can be obtained by applying the flip chip mounting.
【００２５】図７（ａ）及び図７（ｂ）に、本発明の弾
性表面波装置と図５に示した従来構造の弾性表面波装置
について、電気特性を比較して図示している。本発明の
構造により、従来技術に比べて特に高周波側の帯域外減
衰量レベルが１０ｄＢほど向上していることがわかる。FIGS. 7A and 7B show a comparison of electrical characteristics between the surface acoustic wave device of the present invention and the conventional surface acoustic wave device shown in FIG. It can be seen that the structure of the present invention improves the out-of-band attenuation level, especially on the high frequency side, by about 10 dB as compared with the prior art.
【００２６】[0026]
【発明の効果】以上詳述したように、本発明の弾性表面
波装置によれば、帯域外減衰量レベルを向上できる。As described above in detail, according to the surface acoustic wave device of the present invention, the out-of-band attenuation level can be improved.
【００２７】また、絶縁性基板の裏面の接地用の導体パ
ターンを接続してパッケージ内のＩＤＴ電極部にかかる
領域をカバーする構造によりシールド効果を充分に取る
ことができ、信頼性に優れた弾性表面波装置を提供でき
る。Further, a structure in which a conductor pattern for grounding on the back surface of the insulating substrate is connected to cover an area corresponding to the IDT electrode portion in the package can sufficiently obtain a shielding effect, and has an elasticity excellent in reliability. A surface acoustic wave device can be provided.
【００２８】さらに、絶縁性基板の裏面中央部に、接地
用の導体パターンが信号用の導体パターンに挟まれて対
称的に形成することにより、弾性表面波装置を信頼性よ
く安定的に外部回路に接続することができる。Furthermore, a grounding conductor pattern is sandwiched between signal conductor patterns and formed symmetrically at the center of the back surface of the insulating substrate, so that the surface acoustic wave device can be reliably and stably connected to an external circuit. Can be connected to
【図１】本発明に係わる弾性表面波装置の実施形態を模
式的に示す平面図である。FIG. 1 is a plan view schematically showing an embodiment of a surface acoustic wave device according to the present invention.
【図２】本発明に係わる弾性表面波装置の実施形態を模
式的に示す端面図である。FIG. 2 is an end view schematically showing an embodiment of the surface acoustic wave device according to the present invention.
【図３】本発明に係わる弾性表面波装置の実施形態を模
式的に示す底面図である。FIG. 3 is a bottom view schematically showing an embodiment of the surface acoustic wave device according to the present invention.
【図４】従来の弾性表面波装置の例を示す平面図であ
る。FIG. 4 is a plan view showing an example of a conventional surface acoustic wave device.
【図５】従来の弾性表面波装置の例を示す端面図であ
る。FIG. 5 is an end view showing an example of a conventional surface acoustic wave device.
【図６】従来の弾性表面波装置の例を示す底面図であ
る。FIG. 6 is a bottom view showing an example of a conventional surface acoustic wave device.
【図７】（ａ）、（ｂ）はそれぞれ本発明の弾性表面波
装置の実施形態の電気特性を示す図である。FIGS. 7A and 7B are diagrams illustrating electrical characteristics of the surface acoustic wave device according to the embodiment of the present invention.
１：圧電基板 ２：接地電極パッド ３：絶縁性基板 ４：導電パターン ５：ＩＤＴ電極 ６：バンプ接続体 ７：蓋体 ８：絶縁性樹脂 ５１：圧電基板 ５２：接地電極パッド ５３：ＩＤＴ電極 ５４：導電パターン ５５：バンプ接続体 ５６：蓋体 ５７：絶縁性基板 ５８：絶縁性樹脂 1: piezoelectric substrate 2: ground electrode pad 3: insulating substrate 4: conductive pattern 5: IDT electrode 6: bump connector 7: lid 8: insulating resin 51: piezoelectric substrate 52: ground electrode pad 53: IDT electrode 54 : Conductive pattern 55: Bump connector 56: Lid 57: Insulating substrate 58: Insulating resin
Claims (2)
信号用及び接地用の導体パターンが表裏に形成されてい
る絶縁性基板に配設し、前記励振電極と前記導電パター
ンとを接続させて成る弾性表面波装置であって、前記絶
縁性基板の表面には前記導体パターンが基板外周部にの
み形成されているとともに、前記絶縁性基板の表面中央
部に前記圧電基板の励振電極形成面を対面させているこ
とを特徴とする弾性表面波装置。1. A piezoelectric substrate having an excitation electrode formed on a main surface thereof,
A surface acoustic wave device comprising: an insulating substrate on which signal and ground conductor patterns are formed on the front and back sides; and a connection between the excitation electrode and the conductive pattern. Wherein the conductor pattern is formed only on the outer peripheral portion of the substrate, and the excitation electrode forming surface of the piezoelectric substrate faces the central portion of the surface of the insulating substrate.
地用の導体パターンが前記信号用の導体パターンに挟ま
れて形成されていることを特徴とする請求項１に記載の
弾性表面波装置。2. The surface acoustic wave according to claim 1, wherein the conductor pattern for grounding is formed at the center of the back surface of the insulating substrate so as to be sandwiched between the conductor patterns for signal. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000300224A JP2002111440A (en) | 2000-09-29 | 2000-09-29 | Elastic surface wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000300224A JP2002111440A (en) | 2000-09-29 | 2000-09-29 | Elastic surface wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002111440A true JP2002111440A (en) | 2002-04-12 |
Family
ID=18781932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000300224A Pending JP2002111440A (en) | 2000-09-29 | 2000-09-29 | Elastic surface wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002111440A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7233219B2 (en) | 2004-04-28 | 2007-06-19 | Fujitsu Media Devices Limited | Balanced output filter having specified package input and output ground metal patterns |
-
2000
- 2000-09-29 JP JP2000300224A patent/JP2002111440A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7233219B2 (en) | 2004-04-28 | 2007-06-19 | Fujitsu Media Devices Limited | Balanced output filter having specified package input and output ground metal patterns |
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