JP2002100787A5 - - Google Patents
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- JP2002100787A5 JP2002100787A5 JP2000285931A JP2000285931A JP2002100787A5 JP 2002100787 A5 JP2002100787 A5 JP 2002100787A5 JP 2000285931 A JP2000285931 A JP 2000285931A JP 2000285931 A JP2000285931 A JP 2000285931A JP 2002100787 A5 JP2002100787 A5 JP 2002100787A5
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- JP
- Japan
- Prior art keywords
- light
- photoelectric conversion
- conversion efficiency
- semiconductor
- incident angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000011156 evaluation Methods 0.000 description 2
Description
【0019】
(7) 前記半導体への光の入射角(半導体表面に対する角度、以下同じ)が90°での光電変換効率をR90とし、光の入射角が52°での光電変換効率をR52としたとき、R52/R90が0.8以上である上記(1)ないし(6)のいずれかに記載の太陽電池。[0019]
(7) The photoelectric conversion efficiency at an incident angle of light to the semiconductor (an angle with respect to the semiconductor surface, the same applies hereinafter) at 90 ° is R 90, and the photoelectric conversion efficiency at an incident angle of light 52 ° is R 52 The solar cell according to any one of the above (1) to (6), wherein R 52 / R 90 is 0.8 or more.
【0073】
このような半導体4を用いた太陽電池1では、半導体4への光の入射角(半導体表面に対する角度、以下同じ)が90°での光電変換効率をR90とし、光の入射角が52°での光電変換効率をR52としたとき、R52/R90が0.8以上程度となるような特性を有しているのが好ましく、0.85以上程度であるのがより好ましい。このような条件を満たすということは、半導体4が光に対する指向性が低い、すなわち、等方性を有するということである。したがって、このような太陽電池1は、太陽の日照時間のほぼ全域に渡って、より効率良く発電することができる。このような太陽電池1は、例えば、次のようにして製造することができる。[0073]
In a solar cell 1 using such a semiconductor 4, the photoelectric conversion efficiency at an incident angle of light to the semiconductor 4 (an angle with respect to the semiconductor surface, hereinafter the same) is 90 ° is R 90, and the incident angle of light is 52 ° It is preferable to have the characteristic that R 52 / R 90 is about 0.8 or more, and more preferably about 0.85 or more, where R 52 is the photoelectric conversion efficiency of To satisfy such conditions means that the semiconductor 4 has low directivity to light, that is, it has isotropy. Therefore, such a solar cell 1 can generate power more efficiently over almost the entire sunshine hours. Such a solar cell 1 can be manufactured, for example, as follows.
【0181】
(評価)実施例1〜8において製造した太陽電池に、それぞれ、人工太陽灯の光を照射し、このときの光電変換効率を測定した。なお、半導体表面に対する光の入射角度は、90°と52°とに設定し、光の入射角度が90°のときの光電変換効率をR90とし、52°のときの光電変換効率をR52とした。これらの実験および評価の結果を表1に示す。[0181]
(Evaluation) The solar cells manufactured in Examples 1 to 8 were each irradiated with the light of an artificial solar lamp, and the photoelectric conversion efficiency at this time was measured. The incident angles of light with respect to the semiconductor surface are set to 90 ° and 52 °, and the photoelectric conversion efficiency when the incident angle of light is 90 ° is R 90, and the photoelectric conversion efficiency when 52 ° is R 52 And The results of these experiments and evaluations are shown in Table 1.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000285931A JP2002100787A (en) | 2000-09-20 | 2000-09-20 | Solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000285931A JP2002100787A (en) | 2000-09-20 | 2000-09-20 | Solar battery |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002100787A JP2002100787A (en) | 2002-04-05 |
JP2002100787A5 true JP2002100787A5 (en) | 2004-11-18 |
Family
ID=18769923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000285931A Withdrawn JP2002100787A (en) | 2000-09-20 | 2000-09-20 | Solar battery |
Country Status (1)
Country | Link |
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JP (1) | JP2002100787A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10115844B2 (en) | 2013-03-15 | 2018-10-30 | Seerstone Llc | Electrodes comprising nanostructured carbon |
US9783416B2 (en) | 2013-03-15 | 2017-10-10 | Seerstone Llc | Methods of producing hydrogen and solid carbon |
WO2014151138A1 (en) | 2013-03-15 | 2014-09-25 | Seerstone Llc | Reactors, systems, and methods for forming solid products |
EP3129133A4 (en) | 2013-03-15 | 2018-01-10 | Seerstone LLC | Systems for producing solid carbon by reducing carbon oxides |
US11752459B2 (en) | 2016-07-28 | 2023-09-12 | Seerstone Llc | Solid carbon products comprising compressed carbon nanotubes in a container and methods of forming same |
-
2000
- 2000-09-20 JP JP2000285931A patent/JP2002100787A/en not_active Withdrawn
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