JP2002100760A5 - - Google Patents

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Publication number: JP2002100760A5
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2001122998A

Other languages

Japanese (ja)

Other versions

JP2002100760A (en

JP4651848B2 (en

Filing date

2001-04-20

Publication date

2008-05-22

2001-04-20 Application filed filed Critical

2001-04-20 Priority claimed from JP2001122998A external-priority patent/JP4651848B2/en

2001-04-20 Priority to JP2001122998A priority Critical patent/JP4651848B2/en

2001-07-17 Priority to TW090117416A priority patent/TWI237851B/en

2001-07-20 Priority to DE10135557A priority patent/DE10135557A1/en

2001-07-20 Priority to US09/908,618 priority patent/US6774442B2/en

2001-07-20 Priority to KR10-2001-0043683A priority patent/KR100433437B1/en

2002-04-05 Publication of JP2002100760A publication Critical patent/JP2002100760A/en

2008-05-22 Publication of JP2002100760A5 publication Critical patent/JP2002100760A5/ja

2011-03-16 Publication of JP4651848B2 publication Critical patent/JP4651848B2/en

2011-03-16 Application granted granted Critical

2021-04-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

JP2001122998A 2000-07-21 2001-04-20 Semiconductor device, manufacturing method thereof, and CMOS transistor Expired - Fee Related JP4651848B2 (en)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP2001122998A JP4651848B2 (en)	2000-07-21	2001-04-20	Semiconductor device, manufacturing method thereof, and CMOS transistor
TW090117416A TWI237851B (en)	2000-07-21	2001-07-17	Semiconductor device, manufacturing method thereof, and CMOS transistor
KR10-2001-0043683A KR100433437B1 (en)	2000-07-21	2001-07-20	Semiconductor device and method for manufacturing same and cmos transistor
US09/908,618 US6774442B2 (en)	2000-07-21	2001-07-20	Semiconductor device and CMOS transistor
DE10135557A DE10135557A1 (en)	2000-07-21	2001-07-20	Semiconductive device used in complementary metal oxide semiconductor transistor, sequentially comprises substrate, conductive silicon film, silicide film, barrier film, and metal film

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2000-220770		2000-07-21
JP2000220770		2000-07-21
JP2001122998A JP4651848B2 (en)	2000-07-21	2001-04-20	Semiconductor device, manufacturing method thereof, and CMOS transistor

Publications (3)

Publication Number	Publication Date
JP2002100760A JP2002100760A (en)	2002-04-05
JP2002100760A5 true JP2002100760A5 (en)	2008-05-22
JP4651848B2 JP4651848B2 (en)	2011-03-16

Family

ID=26596432

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2001122998A Expired - Fee Related JP4651848B2 (en)	2000-07-21	2001-04-20	Semiconductor device, manufacturing method thereof, and CMOS transistor

Country Status (4)

Country	Link
JP (1)	JP4651848B2 (en)
KR (1)	KR100433437B1 (en)
DE (1)	DE10135557A1 (en)
TW (1)	TWI237851B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3781666B2 (en)	2001-11-29	2006-05-31	エルピーダメモリ株式会社	Method for forming gate electrode and gate electrode structure
KR100806138B1 (en) *	2002-06-29	2008-02-22	주식회사 하이닉스반도체	Method for fabricating semiconductor device having metal-gate electrode
US7112485B2 (en) *	2002-08-28	2006-09-26	Micron Technology, Inc.	Systems and methods for forming zirconium and/or hafnium-containing layers
US7534709B2 (en)	2003-05-29	2009-05-19	Samsung Electronics Co., Ltd.	Semiconductor device and method of manufacturing the same
KR100693878B1 (en) *	2004-12-08	2007-03-12	삼성전자주식회사	Semiconductor Device having low resistance and Method of manufacturing the same
DE102004004864B4 (en) *	2004-01-30	2008-09-11	Qimonda Ag	Method for producing a gate structure and gate structure for a transistor
KR100618895B1 (en) *	2005-04-27	2006-09-01	삼성전자주식회사	Semiconductor device having polymetal gate electrode and method for manufacturing the saem
JP4690120B2 (en) *	2005-06-21	2011-06-01	エルピーダメモリ株式会社	Semiconductor device and manufacturing method thereof
KR100683488B1 (en)	2005-06-30	2007-02-15	주식회사 하이닉스반도체	Poly-metal gate electrode and method for manufacturing the same
KR100673902B1 (en) *	2005-06-30	2007-01-25	주식회사 하이닉스반도체	Tungsten poly metal gate and method for forming the same
KR100654358B1 (en)	2005-08-10	2006-12-08	삼성전자주식회사	Semiconductor integrated circuit device and fabrication method for the same
US7781333B2 (en) *	2006-12-27	2010-08-24	Hynix Semiconductor Inc.	Semiconductor device with gate structure and method for fabricating the semiconductor device
KR100844940B1 (en) *	2006-12-27	2008-07-09	주식회사 하이닉스반도체	Semiconductor device with multi layer diffusion barrier and method for fabricating the same
DE102007045074B4 (en)	2006-12-27	2009-06-18	Hynix Semiconductor Inc., Ichon	Semiconductor device with gate stack structure
KR100914283B1 (en)	2006-12-28	2009-08-27	주식회사 하이닉스반도체	Method for fabricating poly metal gate in semicondutor device
KR100843230B1 (en)	2007-01-17	2008-07-02	삼성전자주식회사	Semiconductor device having gate electrode including metal layer and method for manufacturing the same
KR100824132B1 (en)	2007-04-24	2008-04-21	주식회사 하이닉스반도체	Method of manufacturing a semiconductor device
KR100972220B1 (en) *	2008-01-23	2010-07-23	이동훈	Ceramic Cup Pad for Electric Stimulator
JP2015177187A (en)	2014-03-12	2015-10-05	株式会社東芝	Nonvolatile semiconductor memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0687501B2 (en) *	1988-09-29	1994-11-02	シャープ株式会社	Method for manufacturing gate electrode of semiconductor device
JP3183793B2 (en) *	1994-01-18	2001-07-09	松下電器産業株式会社	Semiconductor device and manufacturing method thereof
JPH0964200A (en) *	1995-08-26	1997-03-07	Ricoh Co Ltd	Semiconductor device and manufacturing method therefor
KR100240880B1 (en) *	1997-08-16	2000-01-15	윤종용	Method for forming gate electrode of semiconductor device
JPH11195621A (en) *	1997-11-05	1999-07-21	Tokyo Electron Ltd	Barrier metal, its formation, gate electrode, and its formation
JP2000036593A (en) *	1998-07-17	2000-02-02	Fujitsu Ltd	Semiconductor device
AU5682399A (en) *	1998-08-21	2000-03-14	Micron Technology, Inc.	Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry
JP3264324B2 (en) *	1998-08-26	2002-03-11	日本電気株式会社	Semiconductor device manufacturing method and semiconductor device
JP2001298186A (en) *	2000-04-14	2001-10-26	Hitachi Ltd	Semiconductor device and manufacturing method thereof
KR100351907B1 (en) *	2000-11-17	2002-09-12	주식회사 하이닉스반도체	method for forming gate electrode semiconductor device

2001
- 2001-04-20 JP JP2001122998A patent/JP4651848B2/en not_active Expired - Fee Related
- 2001-07-17 TW TW090117416A patent/TWI237851B/en not_active IP Right Cessation
- 2001-07-20 DE DE10135557A patent/DE10135557A1/en not_active Ceased
- 2001-07-20 KR KR10-2001-0043683A patent/KR100433437B1/en not_active IP Right Cessation

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