JP2002094116A - Compound semiconductor light emitting device and its manufacturing method - Google Patents
Compound semiconductor light emitting device and its manufacturing methodInfo
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- JP2002094116A JP2002094116A JP2001003249A JP2001003249A JP2002094116A JP 2002094116 A JP2002094116 A JP 2002094116A JP 2001003249 A JP2001003249 A JP 2001003249A JP 2001003249 A JP2001003249 A JP 2001003249A JP 2002094116 A JP2002094116 A JP 2002094116A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/732—Location after the connecting process
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、化合物半導体発光
素子及びその製造方法に関し、特に、側壁と底部表面が
塗布導電層に覆われる化合物半導体発光素子（例えば、
ＧａＮ系の発光ダイオード）及びその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a compound semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a compound semiconductor light emitting device (for example, a compound semiconductor light emitting device in which a side wall and a bottom surface are covered with a coating conductive layer).
GaN-based light-emitting diode) and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、例えば青色ＬＥＤまたは青色レー
ザーダイオード（Laser diode，ＬＤ）のような青色、
緑色または青／緑色発光素子の製造材料として、ＧａＮ
系化合物半導体が脚光を浴びている。従来の青色ＬＥＤ
は、一般に、基板上に、少なくとも一つのｎ型ＧａＮ系
化合物半導体層と、本質またはドープされたＧａＮ系化
合物半導体材料で形成される活性層と、少なくとも一つ
のｐ型ＧａＮ系化合物半導体層と、を順に積層して構成
される。2. Description of the Related Art In recent years, blue light, such as a blue LED or a blue laser diode (Laser diode, LD), has been developed.
GaN as a manufacturing material for green or blue / green light emitting devices
-Based compound semiconductors are in the spotlight. Conventional blue LED
In general, on a substrate, at least one n-type GaN-based compound semiconductor layer, an active layer formed of an intrinsic or doped GaN-based compound semiconductor material, at least one p-type GaN-based compound semiconductor layer, Are sequentially laminated.
【０００３】従来の青色ＬＥＤの製造において、基板材
料として透明なサファイアがよく使われる。他の半導体
発光素子に用いられる半導体基板と異なり、サファイア
は電気絶縁材料であるため、ｎ型電極をサファイア基板
上に直接に形成することができない。この問題を解決す
るために、青色ＬＥＤをエッチングしてｎ型ＧａＮ系化
合物半導体層を部分的に露出させることによりｎ型電極
を効率よく形成できる導電の表面が提供される。In the production of conventional blue LEDs, transparent sapphire is often used as a substrate material. Unlike a semiconductor substrate used for other semiconductor light emitting devices, sapphire is an electrically insulating material, so that an n-type electrode cannot be formed directly on the sapphire substrate. In order to solve this problem, there is provided a conductive surface capable of efficiently forming an n-type electrode by etching a blue LED to partially expose an n-type GaN-based compound semiconductor layer.
【０００４】図１は、従来の青色ＬＥＤを示す断面図で
ある。図1に示すように、従来の青色ＬＥＤは、サファ
イア基板１０１と、ｎ型ＧａＮ系化合物半導体層１０２
と、本質またはドープされたＧａＮ系化合物半導体材料
で形成される活性層１０３と、ｐ型ＧａＮ系化合物半導
体層１０４と、ｎ型ＧａＮ系化合物半導体層１０２の露
出表面に形成されるｎ型電極１０５と、ｐ型ＧａＮ系化
合物半導体層１０４上に形成されるｐ型電極１０６と、
を備えている。FIG. 1 is a sectional view showing a conventional blue LED. As shown in FIG. 1, a conventional blue LED includes a sapphire substrate 101 and an n-type GaN-based compound semiconductor layer 102.
An active layer 103 formed of an intrinsic or doped GaN-based compound semiconductor material; a p-type GaN-based compound semiconductor layer 104; and an n-type electrode 105 formed on an exposed surface of the n-type GaN-based compound semiconductor layer 102 And a p-type electrode 106 formed on the p-type GaN-based compound semiconductor layer 104;
It has.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の青色ＬＥＤは、以下のような欠点がある。ま
ず、青色ＬＥＤの絶縁サファイア基板１０１がカップ形
状のリードフレーム１０７の表面上に載置される際に、
青色ＬＥＤの絶縁サファイア基板１０１はカップ形状の
リードフレーム１０７と電気的に接続されていない。青
色ＬＥＤをカップ形状のリードフレーム１０７と電気的
に接続するために、図2に示すように、金属接続ワイヤ
ー１０８によって、ｎ型電極１０５をカップ形状のリー
ドフレーム１０７と電気的に接続させることが必要であ
る。そして、金属接続ワイヤー１０９によって、ｐ型電
極１０６を分離リードフレーム１１０と電気的に接続す
るため、ワイヤーボンディングの製造工程を２回行わな
ければならない。また、金属ボンディングワイヤー１０
９は、ボンディングパッド１１１を介して、ｐ型電極１
０６と電気的に接続することが好ましい。従って、従来
の青色ＬＥＤの製造において、このように、ワイヤーボ
ンディング工程を２回も行うため、製造工程が複雑で、
チップサイズも大きく、高コストの原因になる。However, such a conventional blue LED has the following disadvantages. First, when the insulating sapphire substrate 101 of the blue LED is placed on the surface of the cup-shaped lead frame 107,
The insulating sapphire substrate 101 of the blue LED is not electrically connected to the cup-shaped lead frame 107. In order to electrically connect the blue LED to the cup-shaped lead frame 107, the n-type electrode 105 may be electrically connected to the cup-shaped lead frame 107 by a metal connection wire 108 as shown in FIG. is necessary. Then, in order to electrically connect the p-type electrode 106 to the separation lead frame 110 by the metal connection wire 109, the manufacturing process of wire bonding must be performed twice. In addition, the metal bonding wire 10
9 denotes a p-type electrode 1 via a bonding pad 111.
06 is preferably electrically connected. Therefore, in the conventional blue LED manufacturing, since the wire bonding process is performed twice as described above, the manufacturing process is complicated,
The chip size is large, which causes high cost.
【０００６】図３は、図１に示した従来の青色ＬＥＤに
おける電極の配置を示す平面図である。図３に示すよう
に、従来の青色ＬＥＤは、ｎ型電極１０５とｐ型電極１
０６との構造及び配列が非対称的であるため、電流が上
下方向に対称的に流れない。このため、従来の青色ＬＥ
Ｄは、電流を均一に広げることができない。従って、従
来の青色ＬＥＤには、作動中に容易に損害をもたらす高
電流密度点が幾つか存在する。FIG. 3 is a plan view showing the arrangement of electrodes in the conventional blue LED shown in FIG. As shown in FIG. 3, a conventional blue LED includes an n-type electrode 105 and a p-type electrode 1.
Since the structure and arrangement with the element 06 are asymmetric, current does not flow symmetrically in the vertical direction. For this reason, the conventional blue LE
D cannot spread the current uniformly. Thus, there are several high current density points in conventional blue LEDs that are easily damaged during operation.
【０００７】さらに、従来の青色ＬＥＤは、周知の静電
気放電（ＥＳＤ）問題が絶縁のサファイア基板１０１に
発生する。以上の欠点を有するため、従来の青色ＬＥＤ
は、機能と信頼性が低い。Further, in the conventional blue LED, a known electrostatic discharge (ESD) problem occurs on the insulating sapphire substrate 101. Due to the above disadvantages, conventional blue LEDs
Has poor function and reliability.
【０００８】ここで、ワイヤーボンディングの製造工程
を１回で済み、製造工程が簡単なローコストの青色ＬＥ
Ｄが期待される。また、電流が均一に分散し、ＥＳＤ問
題の発生しない青色ＬＥＤも期待される。さらに、底部
の表面上に発光効率をアップするための反射ミラーを設
ける青色ＬＥＤも期待される。[0008] Here, the manufacturing process of wire bonding only needs to be performed once, and the low-cost blue LE with a simple manufacturing process is used.
D is expected. Further, a blue LED in which the current is uniformly dispersed and the ESD problem does not occur is expected. Further, a blue LED provided with a reflection mirror on the bottom surface to increase the luminous efficiency is also expected.
【０００９】[0009]
【課題を解決するための手段】本発明の目的は、上述の
問題を鑑みてなされたものであって、ワイヤーボンディ
ングの製造工程を１回で済み、製造工程が簡単でローコ
ストの化合物半導体発光素子及びその製造方法を提供す
ることにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has been made in view of the above-mentioned problem. The manufacturing process of wire bonding can be performed only once, and the manufacturing process is simple and low-cost. And a method for manufacturing the same.
【００１０】本発明のもう一つの目的は、電流を均一に
広げる化合物半導体発光素子及びその製造方法を提供す
ることにある。It is another object of the present invention to provide a compound semiconductor light emitting device capable of uniformly spreading a current and a method of manufacturing the same.
【００１１】本発明のさらに一つの目的は、静電気放電
問題の発生しない化合物半導体発光素子及びその製造方
法を提供することにある。It is still another object of the present invention to provide a compound semiconductor light emitting device which does not cause a problem of electrostatic discharge and a method of manufacturing the same.
【００１２】本発明のさらにまた一つの目的は、底部表
面上に形成される反射ミラーを持つ化合物半導体発光素
子及びその製造方法を提供することにある。It is still another object of the present invention to provide a compound semiconductor light emitting device having a reflection mirror formed on a bottom surface and a method of manufacturing the same.
【００１３】本発明の第１の実施形態による化合物半導
体発光素子は、絶縁基板と、前記絶縁基板の上部表面に
形成され、中央部の表面が周辺部の表面より高い第１Ｇ
ａＮ系半導体層と、前記第１ＧａＮ系半導体層の中央部
の表面上に形成され、光を発生する活性層と、前記活性
層上に形成される第２ＧａＮ系半導体層と、前記第２Ｇ
ａＮ系半導体層上に形成される第１電極と、前記絶縁基
板の側壁と底部表面に塗布され、前記第１ＧａＮ系半導
体層の側壁と電気的に接続する導電層と、を備えてい
る。The compound semiconductor light emitting device according to the first embodiment of the present invention is formed on an insulating substrate and an upper surface of the insulating substrate, and has a first surface having a central portion higher than a peripheral surface.
an aN-based semiconductor layer; an active layer formed on a surface of a central portion of the first GaN-based semiconductor layer to generate light; a second GaN-based semiconductor layer formed on the active layer;
a first electrode formed on the aN-based semiconductor layer; and a conductive layer applied to a sidewall and a bottom surface of the insulating substrate and electrically connected to the sidewall of the first GaN-based semiconductor layer.
【００１４】本発明の第１の実施形態による化合物半導
体発光素子の製造方法は、絶縁基板を提供する工程と、
前記絶縁基板上に第１ＧａＮ系半導体層を形成する工程
と、前記第１ＧａＮ系半導体層上に光の発生する活性層
を形成する工程と、前記活性層上に第２ＧａＮ系半導体
層を形成する工程と、前記第２ＧａＮ系半導体層、前記
活性層及び前記第１ＧａＮ系半導体層の周辺部をそれぞ
れエッチングすることにより、前記第１ＧａＮ系半導体
の周辺部の露出表面を中央部の表面より低くさせる工程
と、前記第２ＧａＮ系半導体層上に第１電極を形成する
工程と、前記絶縁基板の側壁と底部表面を覆うととも
に、前記第１ＧａＮ系半導体層の側壁と電気的に接続す
る導電層を塗布する工程と、を備えている。The method for manufacturing a compound semiconductor light emitting device according to the first embodiment of the present invention comprises the steps of: providing an insulating substrate;
Forming a first GaN-based semiconductor layer on the insulating substrate, forming an active layer that generates light on the first GaN-based semiconductor layer, and forming a second GaN-based semiconductor layer on the active layer And etching the peripheral portions of the second GaN-based semiconductor layer, the active layer, and the first GaN-based semiconductor layer so that the exposed surface of the peripheral portion of the first GaN-based semiconductor is lower than the surface of the central portion. Forming a first electrode on the second GaN-based semiconductor layer, and applying a conductive layer that covers a sidewall and a bottom surface of the insulating substrate and is electrically connected to the sidewall of the first GaN-based semiconductor layer. And
【００１５】本発明の第２の実施形態によると、第１Ｇ
ａＮ系半導体層の周辺部の表面上に形成される第２電極
は、活性層、第２ＧａＮ系半導体層及び第１電極と電気
的に接続しないが、前記絶縁基板の側壁と底部表面を覆
う導電層と電気的に接続する。According to a second embodiment of the present invention, the first G
The second electrode formed on the surface of the peripheral portion of the aN-based semiconductor layer is not electrically connected to the active layer, the second GaN-based semiconductor layer, and the first electrode, but is electrically conductive to cover the side wall and the bottom surface of the insulating substrate. Make an electrical connection with the layer.
【００１６】本発明の第３の実施形態によると、前記絶
縁基板の側壁及び底部表面に、前記第１電極と前記導電
層との間の粘着性を増強するための付着層が形成されて
から、この付着層上に前記塗布導電層が形成される。According to a third embodiment of the present invention, after the adhesion layer for enhancing the adhesiveness between the first electrode and the conductive layer is formed on the side wall and the bottom surface of the insulating substrate. The applied conductive layer is formed on the adhesion layer.
【００１７】本発明の第４の実施形態によると、前記導
電層は透光性であり、ＩＴＯ酸化物層、ＣＴＯ酸化物
層、ＺｎＯ酸化物層または薄金属層で形成される。前記
薄金属層は、厚みが０．００１μｍから１μｍの範囲内
であり、Ａｕ、Ｎｉ、Ｐｔ、Ａｌ、Ｓｎ、Ｉｎ、Ｃｒ、
Ｔｉ、またはそれらの合金で形成される。According to a fourth embodiment of the present invention, the conductive layer is translucent and is formed of an ITO oxide layer, a CTO oxide layer, a ZnO oxide layer or a thin metal layer. The thin metal layer has a thickness in the range of 0.001 μm to 1 μm, and includes Au, Ni, Pt, Al, Sn, In, Cr,
It is formed of Ti or an alloy thereof.
【００１８】[0018]
【発明の実施の形態】以下、図面を参照して本発明の実
施形態について詳しく説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１９】（第１の実施形態）図４〜図８は、本発明
の第１の実施形態における青色ＬＥＤ４００の製造工程
を示す断面図である。(First Embodiment) FIGS. 4 to 8 are sectional views showing steps of manufacturing a blue LED 400 according to a first embodiment of the present invention.
【００２０】まず、図４に示すように、絶縁基板４０１
上に厚さ３μｍ〜５μｍのｎ型層４０２が形成される。
絶縁基板４０１は、通常サファイアで形成される。その
後、ｎ型層４０２上には、厚さ0.1μｍ〜0.3μｍのｎ型
拘束層４０３と、厚さ５００Å〜２０００Åの発光用の
活性層４０４と、厚さ0.1μｍ〜0.3μｍのｐ型拘束層４
０５と、厚さ0.2μｍ〜１μｍのｐ型層４０６とが、順
に形成される。４０２から４０６の各層は、ＧａＮ系化
合物半導体材料で形成される。例えば、４元素化合物半
導体材料ＩｎxＡｌyＧａ1-x-yＮ（ｘ,ｙはモル分率で、
０≦ｘ＜１、０≦ｙ＜１、ｘ＋ｙ＝１）によって、導電
形態及びドーパント濃度の異なる４０２〜４０６の各層
を形成することができる。First, as shown in FIG.
An n-type layer 402 having a thickness of 3 μm to 5 μm is formed thereon.
The insulating substrate 401 is usually formed of sapphire. Thereafter, on the n-type layer 402, an n-type constrained layer 403 having a thickness of 0.1 μm to 0.3 μm, an active layer 404 for light emission having a thickness of 500 to 2000 °, and a p-type constrained layer having a thickness of 0.1 μm to 0.3 μm. Layer 4
05 and a p-type layer 406 having a thickness of 0.2 μm to 1 μm are sequentially formed. Each of layers 402 to 406 is formed of a GaN-based compound semiconductor material. For example, a quaternary compound semiconductor material In x Al y Ga 1-xy N (x and y are mole fractions,
According to 0 ≦ x <1, 0 ≦ y <1, x + y = 1), layers 402 to 406 having different conductivity types and dopant concentrations can be formed.
【００２１】次に、図５に示すように、所定パターンの
フォトマスクを用いて、フォトリソグラフィクにより青
色ＬＥＤ４００を部分的にエッチングして周辺部を取り
除く。エッチングの時間を精確に制御することにより、
ｎ型層４０２を露出させる。ｎ型層４０２は、周辺部の
露出表面４０２ａが中央部の表面４０２ｂ（即ちｎ型層
４０２とｎ型拘束層４０３との間のインターフェース）
より低くになるように軽くエッチングされることが好ま
しい。エッチング工程が終了した後、青色ＬＥＤ４００
は台形状の構造になり、上部の側壁４００ａが下部の側
壁４００ｂより奥の方に位置する。本実施例において、
エッチング工程がドライエッチングを利用することが好
ましい。Next, as shown in FIG. 5, using a photomask having a predetermined pattern, the blue LED 400 is partially etched by photolithography to remove the peripheral portion. By precisely controlling the etching time,
The n-type layer 402 is exposed. The n-type layer 402 has a peripheral exposed surface 402a having a central surface 402b (that is, an interface between the n-type layer 402 and the n-type constrained layer 403).
Preferably, it is lightly etched to be lower. After the etching process is completed, the blue LED 400
Has a trapezoidal structure, and the upper side wall 400a is located deeper than the lower side wall 400b. In this embodiment,
Preferably, the etching process utilizes dry etching.
【００２２】続いて、図６に示すように、ｐ型層４０６
の表面上にｐ型電極４０９が形成される。ｐ型電極４０
９は、ｐ型ＧａＮ系化合物半導体材料とｐ型オーミック
接触を形成できる如何なる金属で形成される。本実施例
において、ｐ型電極４０９は、例えばＮｉ、Ｔｉ、Ａ
ｌ、Ａｕまたはそれらの合金で形成される。ｐ型電極４
０９を形成する際に、厚さ５０Å〜２５０Åの透明接触
層（transparent contact layer, ＴＣＬ）４０７をｐ
型層４０６とｐ型電極４０９との間に入れてｐ型層４０
６の全表面を覆うことにより、青色ＬＥＤ４００の発光
効率及び電流分散均一度を同時に増やすことが好まし
い。ＴＣＬ４０７は、透光性オーミック接触層であり、
例えばＡｕ、Ｎｉ、Ｐｔ、Ａｌ、Ｓｎ、Ｉｎ、Ｃｒ、Ｔ
ｉまたはそれらの合金のような導電材料で形成される。Subsequently, as shown in FIG. 6, the p-type layer 406 is formed.
A p-type electrode 409 is formed on the surface of the substrate. p-type electrode 40
9 is made of any metal capable of forming a p-type ohmic contact with a p-type GaN-based compound semiconductor material. In this embodiment, the p-type electrode 409 is made of, for example, Ni, Ti, A
1, Au or an alloy thereof. p-type electrode 4
When forming the layer 09, a transparent contact layer (TCL) 407 having a thickness of
Between the p-type layer 406 and the p-type electrode 409,
It is preferable to simultaneously increase the luminous efficiency and the current dispersion uniformity of the blue LED 400 by covering the entire surface of the blue LED 6. TCL 407 is a translucent ohmic contact layer,
For example, Au, Ni, Pt, Al, Sn, In, Cr, T
i or a conductive material such as an alloy thereof.
【００２３】その後、図７に示すように、青色ＬＥＤ４
００上に、青色ＬＥＤ４００の頂面及び上部の側壁４０
０ａ及びｎ型層４０２aの露出表面を覆うように、ＰＶ
Ｃ(polyvinyl chloride)で形成する弾性巻きシート４１
０が配置される。よって、青色ＬＥＤ４００の下部の側
壁４００ｂと底部表面４００ｃのみが露出することにな
った。Thereafter, as shown in FIG.
00, the top surface and the upper side wall 40 of the blue LED 400.
0a and the exposed surface of the n-type layer 402a.
Elastic rolled sheet 41 made of C (polyvinyl chloride)
0 is placed. Therefore, only the lower side wall 400b and the bottom surface 400c of the blue LED 400 are exposed.
【００２４】最後に、図８に示すように、ｎ型電極とし
て、青色ＬＥＤ４００の下部の側壁４００ｂと底部表面
４００ｃを直接に覆うための導電層４１１が塗布され
る。青色ＬＥＤの頂面と上部の側壁４００ａとn型層４
０２の露出表面４０２ａは、弾性巻きシート４１０に保
護されるため、導電層４１１と接触しない。導電層４１
１は、ｎ型層４０２とｎ型オーミック接触を形成できる
如何なる金属、例えば、Ａｕ、Ａｌ、Ｔｉ、Ｃｒ、また
はそれらの合金で形成される。導電層４１１を形成した
後、弾性巻きシート４１０を取り除いて、青色ＬＥＤ４
００の頂面と上部の側壁４００ａとn型層４０２の露出
表面４０２aを露出させる。導電層４１１はｎ型層４０
２の側壁にｎ型層４０２と電気的に接続するため、ｎ型
電極として機能する。これにより、本発明の第１の実施
形態による青色ＬＥＤが完成される。Finally, as shown in FIG. 8, a conductive layer 411 for directly covering the lower side wall 400b and the bottom surface 400c of the blue LED 400 is applied as an n-type electrode. Top and top sidewalls 400a of blue LED and n-type layer 4
The exposed surface 402 a of 02 is protected by the elastic winding sheet 410 and does not contact the conductive layer 411. Conductive layer 41
1 is formed of any metal capable of forming an n-type ohmic contact with the n-type layer 402, for example, Au, Al, Ti, Cr, or an alloy thereof. After forming the conductive layer 411, the elastic rolled sheet 410 is removed, and the blue LED 4
Then, the top surface and upper side wall 400a and the exposed surface 402a of the n-type layer 402 are exposed. The conductive layer 411 is the n-type layer 40
Since the side wall 2 is electrically connected to the n-type layer 402, it functions as an n-type electrode. Thereby, the blue LED according to the first embodiment of the present invention is completed.
【００２５】図９は、図４〜図８に示す本発明の第１の
実施形態における青色ＬＥＤ４００を示す平面図であ
る。図９に示すように、青色ＬＥＤ４００のｐ型電極４
０９とｎ型電極としての導電層４１１は、構造と配列が
対称的である。従って、青色ＬＥＤ４００における電流
は、上下方向に沿ってｐ型電極４０９から導電層４１１
に流れ、しかも、図９の矢印に示すように、外側に向い
て均一に広がる。よって、本発明の青色ＬＥＤ４００
は、効率よく電流を均一に広げる、高電流密度点が存在
しない。また、青色ＬＥＤ４００の信頼性及び使用寿命
が格段に改善される。もちろん、ｐ型電極４０９及び導
電層４１１は図９の特定形状に限定されることなく、種
々の変更が可能である。FIG. 9 is a plan view showing the blue LED 400 according to the first embodiment of the present invention shown in FIGS. As shown in FIG. 9, the p-type electrode 4 of the blue LED 400
09 and the conductive layer 411 as an n-type electrode are symmetric in structure and arrangement. Therefore, the current in the blue LED 400 flows from the p-type electrode 409 to the conductive layer 411 along the vertical direction.
And spread uniformly outward as shown by the arrow in FIG. Therefore, the blue LED 400 of the present invention
Does not have a high current density point that efficiently and uniformly spreads the current. Further, the reliability and service life of the blue LED 400 are significantly improved. Of course, the p-type electrode 409 and the conductive layer 411 are not limited to the specific shape shown in FIG. 9 and various changes can be made.
【００２６】図１０は、本発明の第１の実施形態におけ
る青色ＬＥＤ４００をカップ形状のリードフレーム１０
７及び分離リードフレーム１１０に接続する方式を示す
断面図である。導電層４１１がｎ型層４０２と電気的に
接続し、青色ＬＥＤ４００の底部表面４００ｃを覆って
いるため、青色ＬＥＤ４００がカップ形状のリードフレ
ーム１０７上に載置されると、ｎ型層４０２は、導電層
４１１を介してカップ形状のリードフレーム１０７の表
面と電気的に接続する。言い換えれば、接続ワイヤーを
使わずにｎ型層４０２とカップ形状のリードフレーム１
０７とを電気的に接続することができる。従って、ｐ型
電極４０９と分離リードフレーム１１０との間のみ、接
続線１０９を使って電気的に接続する。よって、本発明
の青色ＬＥＤ４００は、ワイヤーボンディングの製造工
程を１回で済むため、製造工程を簡素化し、製造コスト
も下げる。FIG. 10 shows a blue LED 400 according to the first embodiment of the present invention.
FIG. 7 is a cross-sectional view illustrating a method of connecting to a separation lead frame 110 and a separation lead frame 110. Since the conductive layer 411 is electrically connected to the n-type layer 402 and covers the bottom surface 400c of the blue LED 400, when the blue LED 400 is placed on the cup-shaped lead frame 107, the n-type layer 402 It is electrically connected to the surface of the cup-shaped lead frame 107 via the conductive layer 411. In other words, without using the connection wire, the n-type layer 402 and the cup-shaped lead frame 1 are not used.
07 can be electrically connected. Therefore, only the p-type electrode 409 and the separation lead frame 110 are electrically connected using the connection line 109. Therefore, the blue LED 400 of the present invention simplifies the manufacturing process and reduces the manufacturing cost because only one wire bonding manufacturing process is required.
【００２７】さらに、青色ＬＥＤ４００の下部の側壁４
００ｂ及び底部表面４００ｃを覆っている導電層４１１
は、ＥＳＤの保護経路を提供するのみならず、活性層４
０４から発生した光を反射することによって、青色ＬＥ
Ｄ４００の発光効率を向上させる反射ミラーとして機能
する。Further, the lower side wall 4 of the blue LED 400
00b and conductive layer 411 covering bottom surface 400c
Not only provides an ESD protection path, but also an active layer 4
04 by reflecting the light generated from the blue LE
It functions as a reflection mirror that improves the luminous efficiency of D400.
【００２８】（第２の実施の形態）図１１〜図１３は、
本発明の第２の実施形態における青色ＬＥＤ７００の各
製造工程を示す断面図である。図１１〜図１３におい
て、青色ＬＥＤ７００と図４〜図８に示す青色ＬＥＤ４
００と同一の部分には、同一の符号を付すことにより、
説明を省略する。以下、第２の実施形態が第１の実施形
態と異なる部分のみを説明する。(Second Embodiment) FIGS. 11 to 13 show:
It is sectional drawing which shows each manufacturing process of the blue LED700 in 2nd Embodiment of this invention. 11 to 13, a blue LED 700 and a blue LED 4 shown in FIGS.
By assigning the same reference numerals to the same parts as 00,
Description is omitted. Hereinafter, only the parts of the second embodiment that differ from the first embodiment will be described.
【００２９】まず、図１１に示すように、図５に示す半
導体構造を形成した後、上部の側壁４００ａと電気的に
接続しないｎ型電極７０８がｎ型層４０２の露出表面４
０２ａ上に形成され、ｎ型電極７０８と電気的に接続し
ないｐ型電極４０９がｐ型層４０６の表面上に形成され
る。ｎ型電極７０８とｐ型電極４０９は、ｎ型及びｐ型
ＧａＮ系化合物半導体材料とそれぞれｎ型及びｐ型オー
ミック接触を形成できる金属で形成される。本実施形態
において、例えば、Ｎｉ、Ｔｉ、Ａｌ、Ａｕ、またはそ
れらの合金で形成される。First, as shown in FIG. 11, after the semiconductor structure shown in FIG. 5 is formed, an n-type electrode 708 which is not electrically connected to the upper side wall 400a is exposed to the exposed surface 4 of the n-type layer 402.
A p-type electrode 409 is formed on the p-type layer 406 and is not electrically connected to the n-type electrode 708. The n-type electrode 708 and the p-type electrode 409 are formed of a metal capable of forming n-type and p-type ohmic contacts with n-type and p-type GaN-based compound semiconductor materials, respectively. In the present embodiment, for example, it is formed of Ni, Ti, Al, Au, or an alloy thereof.
【００３０】次に、図１２に示すように、青色ＬＥＤ７
００の上層部を覆うＰＶＣ弾性巻きシート４１０が青色
ＬＥＤ７００の上部に配置されることによって、ｎ型電
極７０８、下部の側壁４００ｂ、及び底部表面４００ｃ
のみを露出させる。Next, as shown in FIG.
By disposing the elastic PVC sheet 410 covering the upper layer of the blue LED 700 above the blue LED 700, the n-type electrode 708, the lower side wall 400b, and the bottom surface 400c are formed.
Only expose.
【００３１】続いて、図１３に示すように、青色ＬＥＤ
７００のｎ型電極７０８、下部の側壁４００ｂ及び底部
表面４００ｃを直接に覆うための導電層４１１が塗布さ
れる。ここで、青色ＬＥＤ７００の上層部は、導電層４
１１に接触しないように、弾性巻きシート４１０によっ
て保護される。導電層４１１例えばＡｕ、Ａｌ、Ｔｉ、
Ｃｒ、またはそれらの合金で形成される。導電層４１１
が形成された後、弾性巻きシート４１０を取り除いて青
色ＬＥＤ７００の上層部を露出させることにより、本発
明の第２の実施形態による青色ＬＥＤ７００が完成され
る。Subsequently, as shown in FIG.
A conductive layer 411 for directly covering the n-type electrode 708 of 700, the lower side wall 400b, and the bottom surface 400c is applied. Here, the upper layer portion of the blue LED 700 is the conductive layer 4
11 is protected by the elastic rolled sheet 410 so as not to come into contact therewith. The conductive layer 411, for example, Au, Al, Ti,
It is formed of Cr or an alloy thereof. Conductive layer 411
Is formed, the elastic winding sheet 410 is removed to expose the upper layer of the blue LED 700, thereby completing the blue LED 700 according to the second embodiment of the present invention.
【００３２】図１４は、本発明の第２の実施形態におけ
る青色ＬＥＤ７００をカップ形状のリードフレーム１０
７及び分離リードフレーム１１０に接続する方式を示す
断面図である。導電層４１１がｎ型電極７０８と電気的
に接続し、青色ＬＥＤ７００の底部表面４００ｃを覆っ
ているため、青色ＬＥＤ７００がカップ形状のリードフ
レーム１０７上に載置されると、ｎ型電極７０８は導電
層４１１を介してカップ形状のリードフレーム１０７の
表面と電気的に接続する。言い換えれば、接続ワイヤー
を使わずにｎ型電極７０８とカップ形状のリードフレー
ム１０７とを電気的に接続することができる。従って、
ｐ型電極４０９と分離リードフレーム１１０との間のみ
接続線１０９を使って電気的に接続する。よって、本発
明の青色ＬＥＤ７００は、ワイヤーボンディングの製造
工程を１回で済むため、製造工程を簡素化し、製造コス
トも下げる。FIG. 14 shows a blue LED 700 according to the second embodiment of the present invention in a cup-shaped lead frame 10.
FIG. 7 is a cross-sectional view illustrating a method of connecting to a separation lead frame 110 and a separation lead frame 110. Since the conductive layer 411 is electrically connected to the n-type electrode 708 and covers the bottom surface 400c of the blue LED 700, when the blue LED 700 is placed on the cup-shaped lead frame 107, the n-type electrode 708 becomes conductive. It is electrically connected to the surface of the cup-shaped lead frame 107 via the layer 411. In other words, the n-type electrode 708 and the cup-shaped lead frame 107 can be electrically connected without using a connection wire. Therefore,
Electrical connection is made only between the p-type electrode 409 and the separation lead frame 110 using the connection line 109. Therefore, the blue LED 700 of the present invention simplifies the manufacturing process and reduces the manufacturing cost because the manufacturing process of the wire bonding only needs to be performed once.
【００３３】（第３の実施形態）図１５は、本発明の第
３の実施形態における青色ＬＥＤ９００を示す断面図で
ある。図１５における青色ＬＥＤ９００は、図１１〜図
１３に示す青色ＬＥＤ７００と同一の部分には、同一の
符号を付すことにより、説明を省略する。以下、第３の
実施形態が第２の実施形態と異なる部分のみを説明す
る。(Third Embodiment) FIG. 15 is a sectional view showing a blue LED 900 according to a third embodiment of the present invention. The description of the blue LED 900 in FIG. 15 will be omitted by giving the same reference numerals to the same parts as those of the blue LED 700 shown in FIGS. Hereinafter, only the portions of the third embodiment that differ from the second embodiment will be described.
【００３４】青色ＬＥＤ９００の製造工程において、Ｌ
ＥＤ９００のｎ型電極７０８、下部の側壁４００ｂ及び
底部表面４００ｃを覆うための付着層９０１を導電層４
１１形成の前に形成させる工程以外は、全ての工程が図
１１〜図１３に示す青色ＬＥＤ７００の製造工程と同じ
である。付着層９０１は、絶縁基板４０１の側壁及び底
部表面が導電層４１１との粘着性を強化するために設け
られる。付着層９０１は、Ｔｉ、Ｎｉ、Ａｌ、Ｃｒ、Ｐ
ｄ、または絶縁基板４０１の側壁及び底部表面が導電層
４１１との粘着性を強化できる金属で形成される。In the manufacturing process of the blue LED 900, L
An adhesion layer 901 for covering the n-type electrode 708 of the ED 900, the lower side wall 400b, and the bottom surface 400c is formed of the conductive layer 4
Except for the step of forming before the formation of 11, all the steps are the same as the manufacturing steps of the blue LED 700 shown in FIGS. The adhesion layer 901 is provided so that the side surfaces and the bottom surface of the insulating substrate 401 can enhance the adhesion with the conductive layer 411. The adhesion layer 901 is made of Ti, Ni, Al, Cr, P
d, or the side wall and the bottom surface of the insulating substrate 401 are formed of a metal capable of enhancing the adhesion to the conductive layer 411.
【００３５】（第４の実施形態）図１６は、本発明の第
４の実施形態における青色ＬＥＤ１０００を示す断面図
である。図１６における青色ＬＥＤ１０００は、図１１
〜図１３に示す青色ＬＥＤ７００と同一の部分には、同
一の符号を付すことにより、説明を省略する。以下、第
４の実施形態が第２の実施形態と異なる部分のみを説明
する。(Fourth Embodiment) FIG. 16 is a sectional view showing a blue LED 1000 according to a fourth embodiment of the present invention. The blue LED 1000 in FIG.
13 are denoted by the same reference numerals as in the blue LED 700 shown in FIG. Hereinafter, only the portions of the fourth embodiment that differ from the second embodiment will be described.
【００３６】第２の実施形態で説明したように、活性層
４０４に発生した光は、青色ＬＥＤ７００の上層部、即
ちｐ型層４０６を通して光を青色ＬＥＤ７００の外に射
出する。しかし、第４の実施形態では、活性層４０４に
発生した光は、青色ＬＥＤ１０００の底部、即ち絶縁基
板４０１から射出する。As described in the second embodiment, the light generated in the active layer 404 emits light to the outside of the blue LED 700 through the upper layer of the blue LED 700, that is, the p-type layer 406. However, in the fourth embodiment, the light generated in the active layer 404 is emitted from the bottom of the blue LED 1000, that is, from the insulating substrate 401.
【００３７】第４の実施形態の青色ＬＥＤ１０００を実
現するために、導電層１００１を活性層４０４に発生し
た光を透過できる透光層に形成させる。透光性導電層１
００１は、ＩＴＯ(Indium-tin-oxide)酸化物層、ＣＴＯ
(Cadmium-tin-oxide)酸化物層、ＺｎＯ(Zinc oxide)層
または薄金属層を使用する。前記薄金属層は、厚みが0.
001μｍから１μｍの範囲内であり、Ａｕ、Ｎｉ、Ｐ
ｔ、Ａｌ、Ｓｎ、Ｉｎ、Ｃｒ、Ｔｉ、またはそれらの合
金で形成される。In order to realize the blue LED 1000 of the fourth embodiment, the conductive layer 1001 is formed as a light transmitting layer that can transmit the light generated in the active layer 404. Translucent conductive layer 1
001 is an ITO (Indium-tin-oxide) oxide layer, CTO
A (Cadmium-tin-oxide) oxide layer, a ZnO (Zinc oxide) layer or a thin metal layer is used. The thin metal layer has a thickness of 0.
Au, Ni, P within the range of 001 μm to 1 μm.
It is formed of t, Al, Sn, In, Cr, Ti, or an alloy thereof.
【００３８】さらに、ｐ型層４０６の全表面を覆うよう
にｐ型電極１００２が形成される。第４の実施形態で
は、青色ＬＥＤ１０００の発光効率を上げるために、ｐ
型電極１００２が反射ミラーとして活性層４０４に発生
した光を反射する。Further, a p-type electrode 1002 is formed so as to cover the entire surface of p-type layer 406. In the fourth embodiment, in order to increase the luminous efficiency of the blue LED 1000, p
The mold electrode 1002 serves as a reflection mirror to reflect light generated on the active layer 404.
【００３９】図１６に示すように、第４の実施形態の青
色ＬＥＤ１０００がカップ形状のリードフレーム１０７
上に載置されると、青色ＬＥＤ１０００の正面が反転し
て下向きになり、ｐ型電極１００２をカップ形状のリー
ドフレーム１０７の表面と電気的に接続する。続いて、
透光性導電層１００１は、ボンディングワイヤー１０９
を介して分離リードフレーム１１０と電気的に接続す
る。透光性導電層１００１とボンディングワイヤー１０
９との間のボンディング強度を強化するために、ボンデ
ィングパッド１００３を使うのが好ましい。As shown in FIG. 16, the blue LED 1000 according to the fourth embodiment is a cup-shaped lead frame 107.
When placed on top, the front surface of the blue LED 1000 is inverted and turned downward, and the p-type electrode 1002 is electrically connected to the surface of the cup-shaped lead frame 107. continue,
The light-transmitting conductive layer 1001 includes a bonding wire 109.
Is electrically connected to the separation lead frame 110 via Translucent conductive layer 1001 and bonding wire 10
It is preferable to use a bonding pad 1003 in order to increase the bonding strength between the bonding pad 100 and the bonding pad 9.
【００４０】設置の方向が異なるが、第４の実施形態の
青色ＬＥＤ１０００は、第２の実施形態と同じように、
ワイヤーボンディングの製造工程を１回で済むため、製
造工程を簡素化し、製造コストも下げる。さらに、青色
ＬＥＤ１０００の絶縁基板４０１の側壁及び底部表面を
覆う透光性導電層１００１がＥＳＤの保護経路を提供す
る。Although the installation direction is different, the blue LED 1000 of the fourth embodiment is similar to the second embodiment,
Since only one wire bonding manufacturing process is required, the manufacturing process is simplified and the manufacturing cost is reduced. Further, the light-transmitting conductive layer 1001 covering the side wall and the bottom surface of the insulating substrate 401 of the blue LED 1000 provides an ESD protection path.
【００４１】以上の実施形態では、本発明の技術を簡単
に説明するために、提出された具体例であり、本発明を
前記実施形態に限定されることなく、本発明の請求する
範囲で、種々の変更が可能である。The above embodiment is a specific example submitted for simply explaining the technology of the present invention, and the present invention is not limited to the above embodiment, and is within the scope of the claims of the present invention. Various modifications are possible.
【図１】従来の青色ＬＥＤを示す断面図である。FIG. 1 is a cross-sectional view illustrating a conventional blue LED.
【図２】図１に示した従来の青色ＬＥＤがカップ形状の
リードフレーム上に載置された状態を示す断面図であ
る。FIG. 2 is a cross-sectional view showing a state in which the conventional blue LED shown in FIG. 1 is mounted on a cup-shaped lead frame.
【図３】図１に示した従来の青色ＬＥＤにおける電極の
配置を示す平面図である。FIG. 3 is a plan view showing an arrangement of electrodes in the conventional blue LED shown in FIG.
【図４】本発明の第１の実施形態における青色ＬＥＤの
製造工程を示す断面図である。FIG. 4 is a sectional view illustrating a manufacturing process of the blue LED according to the first embodiment of the present invention.
【図５】本発明の第１の実施形態における青色ＬＥＤの
製造工程を示す断面図である。FIG. 5 is a cross-sectional view illustrating a manufacturing process of the blue LED according to the first embodiment of the present invention.
【図６】本発明の第１の実施形態における青色ＬＥＤの
製造工程を示す断面図である。FIG. 6 is a cross-sectional view illustrating a manufacturing process of the blue LED according to the first embodiment of the present invention.
【図７】本発明の第１の実施形態における青色ＬＥＤの
製造工程を示す断面図である。FIG. 7 is a cross-sectional view illustrating a manufacturing process of the blue LED according to the first embodiment of the present invention.
【図８】本発明の第１の実施形態における青色ＬＥＤの
製造工程を示す断面図である。FIG. 8 is a cross-sectional view illustrating a manufacturing process of the blue LED according to the first embodiment of the present invention.
【図９】図８に示した青色ＬＥＤの電極の配置を示す平
面図である。FIG. 9 is a plan view showing an arrangement of electrodes of the blue LED shown in FIG.
【図１０】図８の青色ＬＥＤがカップ形状のリードフレ
ーム上に載置された状態を示す断面図である。10 is a cross-sectional view showing a state where the blue LED of FIG. 8 is mounted on a cup-shaped lead frame.
【図１１】本発明の第２の実施形態における青色ＬＥＤ
の製造工程を示す断面図である。FIG. 11 shows a blue LED according to a second embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a manufacturing process of the second embodiment.
【図１２】本発明の第２の実施形態における青色ＬＥＤ
の製造工程を示す断面図である。FIG. 12 shows a blue LED according to a second embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a manufacturing process of the second embodiment.
【図１３】本発明の第２の実施形態における青色ＬＥＤ
の製造工程を示す断面図である。FIG. 13 shows a blue LED according to the second embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a manufacturing process of the second embodiment.
【図１４】図１３の青色ＬＥＤがカップ形状のリードフ
レーム上に載置された状態を示す断面図である。14 is a cross-sectional view showing a state where the blue LED of FIG. 13 is mounted on a cup-shaped lead frame.
【図１５】本発明の第３の実施形態における青色ＬＥＤ
がカップ形状のリードフレーム上に載置された状態を示
す断面図である。FIG. 15 shows a blue LED according to a third embodiment of the present invention.
Is a cross-sectional view showing a state where is mounted on a cup-shaped lead frame.
【図１６】本発明の第４の実施形態における青色ＬＥＤ
がカップ形状のリードフレーム上に載置された状態を示
す断面図である。FIG. 16 shows a blue LED according to a fourth embodiment of the present invention.
Is a cross-sectional view showing a state where is mounted on a cup-shaped lead frame.
１０１ サファイア基板 １０２ ｎ型ＧａＮ系化合物半導体層 １０３ 活性層 １０４ ｐ型ＧａＮ系化合物半導体層 １０５ ｎ型電極 １０６ ｐ型電極 １０７ カップ形状リードフレーム １０８ 金属ボンディングワイヤー １０９ 金属ボンディングワイヤー １１０ 分離リードフレーム １１１ ボンディングパッド ４００ 青色ＬＥＤ ４００ａ 上部の側壁 ４００ｂ 下部の側壁 ４００ｃ 底部表面 ４０１ 絶縁基板 ４０２ ｎ型層 ４０２ａ 露出表面 ４０２ｂ 中央部の表面 ４０３ ｎ型拘束層 ４０４ 活性層 ４０５ ｐ型拘束層 ４０６ ｐ型層 ４０７ 透光性接触層 ４０９ ｐ型電極 ４１０ 弾性巻きシート ４１１ 導電層 ７００ 青色ＬＥＤ ７０８ ｐ型電極 ９００ 青色ＬＥＤ ９０１ 付着層 １０００ 青色ＬＥＤ １００１ 導電層 １００２ ｐ型電極 １００３ ボンディングパッド Reference Signs List 101 sapphire substrate 102 n-type GaN-based compound semiconductor layer 103 active layer 104 p-type GaN-based compound semiconductor layer 105 n-type electrode 106 p-type electrode 107 cup-shaped lead frame 108 metal bonding wire 109 metal bonding wire 110 separation lead frame 111 bonding pad 400 Blue LED 400a Upper sidewall 400b Lower sidewall 400c Bottom surface 401 Insulating substrate 402 N-type layer 402a Exposed surface 402b Central surface 403 N-type constraining layer 404 Active layer 405 P-type constraining layer 406 P-type layer 407 Translucency Contact layer 409 P-type electrode 410 Elastic winding sheet 411 Conductive layer 700 Blue LED 708 P-type electrode 900 Blue LED 901 Adhesive layer 1000 Blue LED 1001 Conductive layer 1002 P-type electrode 1 03 bonding pad
Claims (6)
辺部の表面より高い第１ＧａＮ系半導体層と、 前記第１ＧａＮ系半導体の中央部の上に形成され、光を
発生する活性層と、 前記活性層上に形成される第２ＧａＮ系半導体層と、 前記第２ＧａＮ系半導体層上に形成される第１電極と、 前記絶縁基板の側壁及び底部の表面に塗布され、前記第
１ＧａＮ系半導体層の側壁と電気的に接続する導電層
と、を備えていることを特徴とする化合物半導体発光素
子。An insulating substrate; a first GaN-based semiconductor layer formed on an upper surface of the insulating substrate, a surface of a central portion higher than a surface of a peripheral portion; An active layer for generating light, a second GaN-based semiconductor layer formed on the active layer, a first electrode formed on the second GaN-based semiconductor layer, and a surface of a side wall and a bottom of the insulating substrate. A compound semiconductor light-emitting device, comprising: a conductive layer applied and electrically connected to a side wall of the first GaN-based semiconductor layer.
面に形成され、前記活性層、前記第２ＧａＮ系半導体層
及び前記第１電極と電気的に接続しないが、前記導電層
と電気的に接続する第２電極、をさらに備えていること
を特徴とする請求項１記載の化合物半導体発光素子。2. The semiconductor device, which is formed on a surface of a peripheral portion of the first GaN-based semiconductor layer and is not electrically connected to the active layer, the second GaN-based semiconductor layer, and the first electrode, but is electrically connected to the conductive layer. 2. The compound semiconductor light-emitting device according to claim 1, further comprising a second electrode connected thereto.
導電層との間に挟まれる付着層と、をさらに備えている
ことを特徴とする請求項１記載の化合物半導体発光素
子。3. The compound semiconductor light emitting device according to claim 1, further comprising: an adhesion layer sandwiched between the side wall and the bottom surface of the insulating substrate and the conductive layer.
と、 前記第１ＧａＮ系半導体層上に光を発生する活性層を形
成する工程と、 前記活性層上に第２ＧａＮ系半導体層を形成する工程
と、 前記第２ＧａＮ系半導体層、活性層及び第１ＧａＮ系半
導体層の周辺部をそれぞれエッチングすることにより、
前記第１ＧａＮ系半導体の周辺部の露出表面を中央部の
表面より低くさせる工程と、 前記第２ＧａＮ系半導体層上に第１電極を形成する工程
と、 前記絶縁基板の側壁及び底部表面を覆うと共に前記第１
ＧａＮ系半導体層と電気的に接続する導電層を塗布する
工程と、 を備えていることを特徴とする化合物半導体発光素子の
製造方法。Providing an insulating substrate; forming a first GaN-based semiconductor on the insulating substrate; forming an active layer for generating light on the first GaN-based semiconductor layer; Forming a second GaN-based semiconductor layer on the layer; and etching the peripheral portions of the second GaN-based semiconductor layer, the active layer, and the first GaN-based semiconductor layer, respectively.
Making the exposed surface of the peripheral portion of the first GaN-based semiconductor lower than the surface of the central portion; forming a first electrode on the second GaN-based semiconductor layer; covering a side wall and a bottom surface of the insulating substrate; The first
Coating a conductive layer electrically connected to the GaN-based semiconductor layer. A method for manufacturing a compound semiconductor light-emitting device, comprising:
及び前記第１電極と電気的に接続しないように、前記第
１ＧａＮ系半導体層の周辺部の露出表面上に第２電極を
形成する工程、をさらに備えていることを特徴とする請
求項４記載の化合物半導体発光素子の製造方法。5. A step of forming a second electrode on an exposed surface at a peripheral portion of the first GaN-based semiconductor layer so as not to be electrically connected to the active layer, the second GaN-based semiconductor layer, and the first electrode. 5. The method for manufacturing a compound semiconductor light emitting device according to claim 4, further comprising:
絶縁基板の側壁及び底部の表面上に付着層を形成する工
程を、さらに備えていることを特徴とする請求項４記載
の化合物半導体発光素子の製造方法。6. The compound according to claim 4, further comprising, before the step of applying the conductive layer, a step of forming an adhesion layer on a side wall and a bottom surface of the insulating substrate. A method for manufacturing a semiconductor light emitting device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW089118295A TW488086B (en) | 2000-09-06 | 2000-09-06 | Light emitting compound semiconductor device and its manufacturing method |
| TW089118295 | 2000-09-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002094116A true JP2002094116A (en) | 2002-03-29 |
Family
ID=21661068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001003249A Pending JP2002094116A (en) | 2000-09-06 | 2001-01-11 | Compound semiconductor light emitting device and its manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2002094116A (en) |
| TW (1) | TW488086B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011857A (en) * | 2003-06-17 | 2005-01-13 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting device |
| JP2010123717A (en) * | 2008-11-19 | 2010-06-03 | Stanley Electric Co Ltd | Semiconductor light emitting element and method for manufacturing it |
| US20100224858A1 (en) * | 2009-03-06 | 2010-09-09 | Advanced Optoelectronic Technology Inc. | Lateral thermal dissipation led and fabrication method thereof |
| JP2011510493A (en) * | 2008-01-19 | 2011-03-31 | 鶴山麗得電子實業有限公司 | LED, package structure with LED, and method of manufacturing LED |
| JP2019201198A (en) * | 2018-05-18 | 2019-11-21 | オプト テック コーポレーション | Light-emitting chip and related packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927639A (en) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | Semiconductor device |
| JPH10163530A (en) * | 1996-11-27 | 1998-06-19 | Nichia Chem Ind Ltd | Nitride semiconductor device |
-
2000
- 2000-09-06 TW TW089118295A patent/TW488086B/en not_active IP Right Cessation
-
2001
- 2001-01-11 JP JP2001003249A patent/JP2002094116A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927639A (en) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | Semiconductor device |
| JPH10163530A (en) * | 1996-11-27 | 1998-06-19 | Nichia Chem Ind Ltd | Nitride semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011857A (en) * | 2003-06-17 | 2005-01-13 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting device |
| JP2011510493A (en) * | 2008-01-19 | 2011-03-31 | 鶴山麗得電子實業有限公司 | LED, package structure with LED, and method of manufacturing LED |
| JP2010123717A (en) * | 2008-11-19 | 2010-06-03 | Stanley Electric Co Ltd | Semiconductor light emitting element and method for manufacturing it |
| US20100224858A1 (en) * | 2009-03-06 | 2010-09-09 | Advanced Optoelectronic Technology Inc. | Lateral thermal dissipation led and fabrication method thereof |
| US8513696B2 (en) * | 2009-03-06 | 2013-08-20 | Advanced Optoelectronic Technology, Inc. | Lateral thermal dissipation LED and fabrication method thereof |
| JP2019201198A (en) * | 2018-05-18 | 2019-11-21 | オプト テック コーポレーション | Light-emitting chip and related packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW488086B (en) | 2002-05-21 |
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