JP2002088437A - Contact material for vacuum valve and its production method - Google Patents
Contact material for vacuum valve and its production methodInfo
- Publication number
- JP2002088437A JP2002088437A JP2000280917A JP2000280917A JP2002088437A JP 2002088437 A JP2002088437 A JP 2002088437A JP 2000280917 A JP2000280917 A JP 2000280917A JP 2000280917 A JP2000280917 A JP 2000280917A JP 2002088437 A JP2002088437 A JP 2002088437A
- Authority
- JP
- Japan
- Prior art keywords
- contact material
- powder
- vacuum valve
- mixing
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、真空バルブ用接点
材料及びその製造方法に関わり、特に、優れた大電流遮
断特性及び大電流通電特性を兼備する接点材料及びその
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact material for a vacuum valve and a method for producing the same, and more particularly, to a contact material having both excellent large current interrupting characteristics and large current carrying characteristics and a method for producing the same.
【０００２】[0002]
【従来の技術】一般に、真空バルブ用接点材料の製造方
法は、溶解法及び焼結法の２通りに分けられる。溶解法
は、銅（Ｃｕ）などの比較的低融点の導電性金属を主体
とした接点材料の製造方法である。溶解法の中でも、真
空中で誘導溶解を行う真空溶解法が一般的である。真空
溶解法では、Ｃｕ−ビスマス（Ｂｉ）系、或いはＣｕ−
テルル（Ｔｅ）−セレン（Ｓｅ）系などの接点材料が製
造されている。また、近年では、アーク溶解法を用い
て、Ｃｕ−クロム（Ｃｒ）系の接点材料の製造も行われ
ている。2. Description of the Related Art Generally, a method for producing a contact material for a vacuum valve is divided into a melting method and a sintering method. The melting method is a method for producing a contact material mainly composed of a conductive metal having a relatively low melting point such as copper (Cu). Among the melting methods, a vacuum melting method in which induction melting is performed in a vacuum is common. In the vacuum melting method, Cu-bismuth (Bi) -based or Cu-
Contact materials such as tellurium (Te) -selenium (Se) are manufactured. In recent years, a Cu-chromium (Cr) -based contact material has also been manufactured using an arc melting method.
【０００３】一方、焼結法は、このような比較的低融点
の導電成分と高融点の耐弧成分とが同程度の体積率で複
合化された接点材料の製造に用いられている。焼結法に
おいては、通常、高融点の耐弧成分を主体とした粉末を
一定の相対密度となるように成形し焼結したスケルトン
状の成形体に低融点の導電性金属を溶浸して接点材料を
製造する。焼結法により、Ｃｕ−タングステン（Ｗ）
系、銀（Ａｇ）−タングステン炭化物（ＷＣ）系、及び
Ｃｕ−Ｃｒ系などの接点材料が製造されている。また、
Ｃｕ−Ｃｒ系の接点材料は、固相焼結法によっても製造
されている。On the other hand, the sintering method is used for producing a contact material in which such a relatively low-melting conductive component and a high-melting arc-resistant component are combined at the same volume ratio. In the sintering method, usually, a low-melting conductive metal is infiltrated into a skeleton-shaped compact formed by molding a powder mainly composed of a high melting point arc-resistant component to have a constant relative density, and then contacting the contact. Manufacture materials. Cu-tungsten (W) by sintering method
Contact materials such as silver-based, silver (Ag) -tungsten carbide (WC) -based, and Cu-Cr-based are manufactured. Also,
Cu-Cr based contact materials are also manufactured by a solid phase sintering method.
【０００４】特開平１１−１６４５５号広報において、
優れた大電流遮断特性及び低サージ性を兼ね備えたＣｕ
−炭化チタン（ＴｉＣ）−Ｃｒ系、或いはＣｕ−炭化バ
ナジウム（ＶＣ）−Ｃｒ系の接点材料に関する発明が開
示されている。ここでは、ＴｉＣ或いはＶＣを主体とす
る成形体にＣｕ−Ｃｒ合金を溶浸する方法、及びＴｉＣ
或いはＶＣを主体とした成形体の中に、粉末状のＣｒ粒
子を添加してＣｕを溶浸する方法の２通りの方法が開示
されている。また、ＴｉＣ或いはＶＣを主体とする粉末
は成形性が悪いため、割型を用いたＴｉＣ或いはＶＣの
形成方法が開示されている。[0004] In the public information of JP-A-11-16455,
Cu with excellent high current interruption characteristics and low surge characteristics
An invention relating to a contact material of titanium carbide (TiC) -Cr system or Cu-vanadium carbide (VC) -Cr system is disclosed. Here, a method of infiltrating a molded body mainly composed of TiC or VC with a Cu—Cr alloy,
Alternatively, two methods are disclosed, in which powdery Cr particles are added to a molded body mainly composed of VC to infiltrate Cu. Further, since powder mainly composed of TiC or VC has poor moldability, a method of forming TiC or VC using a split mold is disclosed.
【０００５】[0005]
【発明が解決しようとする課題】ところが、近年、配電
機器のコンパクト化の要求が高まり、遮断電流密度の大
きい接点材料が求められている。即ち、従来、大電流遮
断用として用いられてきたＣｕ−Ｃｒ系の接点材料より
もさらに高い遮断電流密度を有する接点材料の開発が待
望されている。However, in recent years, there has been an increasing demand for compact distribution equipment, and there has been a demand for a contact material having a large breaking current density. That is, there is a long-awaited need to develop a contact material having a higher breaking current density than a Cu-Cr-based contact material conventionally used for breaking large currents.
【０００６】特開平１１−１６４５５号広報に開示され
たＣｕ−ＴｉＣ系の接点材料は、Ｃｕ−Ｃｒ系の接点材
料を上回る優れた大電流遮断特性を有する。しかし、Ｔ
ｉＣの含有量を多くすることで低サージ性を優先してい
るために、十分な大電流通電特性を得ることができな
い。従って、２０００Ａ以上の定格電流の大きな真空バ
ルブへの適用には不向きである。[0006] The Cu-TiC-based contact material disclosed in Japanese Patent Application Laid-Open No. H11-16455 has an excellent large-current interrupting property exceeding that of the Cu-Cr-based contact material. But T
Since a low surge property is prioritized by increasing the content of iC, sufficient large current carrying characteristics cannot be obtained. Therefore, it is not suitable for application to a vacuum valve having a large rated current of 2000 A or more.
【０００７】本発明はこのような従来技術の問題点を解
決するために成されたものであり、その目的は、優れた
大電流遮断特性及び大電流通電特性を兼備する真空バル
ブ用接点材料及びその製造方法を提供することである。SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and has as its object to provide a contact material for a vacuum valve, which has both excellent large current interrupting characteristics and large current carrying characteristics. It is an object of the present invention to provide a manufacturing method thereof.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明の第１の特徴は、重量比が７５乃至９５％の
銅と、重量比が５乃至２５％の炭化チタン（ＴｉＣ）な
どのチタン炭化物或いは炭化バナジウム（ＶＣ）などの
バナジウム炭化物の少なくとも一方を含む炭化物とを少
なくとも有する真空バルブ用接点材料であることであ
る。In order to achieve the above object, a first feature of the present invention is that copper having a weight ratio of 75 to 95% and titanium carbide (TiC) having a weight ratio of 5 to 25% are used. And a carbide containing at least one of vanadium carbides such as titanium carbide or vanadium carbide (VC).
【０００９】本発明の第１の特徴によれば、接点材料の
組成がこの範囲内であることにより、チタン炭化物或い
はバナジウム炭化物のアーク拡散作用による大電流遮断
性能と、Ｃｕによる大電流通電性能の両者を損なうこと
なく発揮させることができる。According to the first feature of the present invention, when the composition of the contact material is within this range, the large current interruption performance due to the arc diffusion effect of titanium carbide or vanadium carbide and the large current conduction performance due to Cu can be obtained. Both can be exhibited without spoiling.
【００１０】本発明の第１の特徴において、接点材料
は、重量比が５％以下のクロム（Ｃｒ）を更に有するこ
とが望ましい。接点材料にＣｒがさらに添加されること
により、接点材料中に発生する欠陥を極小化することが
でき、さらに優れた大電流遮断特性を得ることができ
る。また、チタン炭化物或いはバナジウム炭化物は、平
均粒径が２００μｍ以下の粒子状であり、銅マトリック
スの中に分散していることが望ましい。この粒経範囲の
チタン炭化物或いはバナジウム炭化物の原料粉末が分散
して配置していることにより、焼結時に銅が炭化物粒子
間に十分拡散することが可能であり、欠陥の少ない銅マ
トリックスを形成することができる。In the first aspect of the present invention, it is preferable that the contact material further includes chromium (Cr) having a weight ratio of 5% or less. By further adding Cr to the contact material, defects generated in the contact material can be minimized, and more excellent large current interruption characteristics can be obtained. Further, the titanium carbide or the vanadium carbide is in the form of particles having an average particle diameter of 200 μm or less, and is preferably dispersed in a copper matrix. By dispersing and arranging the raw material powders of titanium carbide or vanadium carbide in this particle size range, copper can be sufficiently diffused between the carbide particles at the time of sintering, and a copper matrix with few defects is formed. be able to.
【００１１】本発明の第２の特徴は、（イ）平均粒径が
３０乃至２００μｍのＣｕの粉末と、平均粒径が３０乃
至２００μｍのチタン炭化物或いはバナジウム炭化物の
粉末とを混合して混合粉末を作る混合工程と、（ロ）混
合粉末に圧力を加えて成形して成形体を作る成形工程
と、（ハ）成形体を９５０度以上銅の融点以下の温度で
焼結して焼結体を作る焼結工程とを少なくとも有する真
空バルブ用接点材料の製造方法であることである。A second feature of the present invention is that (a) a mixed powder obtained by mixing a Cu powder having an average particle diameter of 30 to 200 μm and a titanium carbide or vanadium carbide powder having an average particle diameter of 30 to 200 μm. (B) a molding step of applying pressure to the mixed powder to form a molded body; and (c) sintering the molded body at a temperature of 950 ° C. or more and the melting point of copper and a sintered body. And a sintering step for producing a contact material for a vacuum valve.
【００１２】本発明の第２の特徴において、混合工程の
前に、Ｃｕの粉末を水素中で２００乃至５００℃の温度
で還元処理する還元工程を更に有することが望ましい。
この還元工程により、チタン炭化物或いはバナジウム炭
化物とＣｕとの濡れ性が改善され、界面の欠陥を低減す
ることができる。また、混合工程の後に、成形工程及び
焼結工程を２回以上繰り返し行うことが望ましい。成形
工程及び焼結工程を２回以上繰り返し行うことで、組織
中の欠陥をさらに低減することができる。焼結工程は、
２×１０−１Ｐａ以下の真空雰囲気において実施される
ことが望ましい。また、混合工程において、平均粒径が
３０乃至２００μｍのクロム（Ｃｒ）の粉末をさらに混
合することが望ましい。添加したＣｒ粒子が焼結時にチ
タン炭化物の粒子表面に拡散して銅マトリックスとチタ
ン炭化物粒子との密着性を良好にして界面の欠陥を抑制
する。また、混合工程は、Ｃｒの粉末とチタン炭化物或
いはバナジウム炭化物の粉末を混合するステップと、Ｃ
ｒとチタン炭化物或いはバナジウム炭化物の混合粉末と
Ｃｕの粉末を混合するステップとから成ることが望まし
い。この順番で混合することにより、成形体中において
チタン炭化物粉末とＣｒ粉末が隣接する可能性が高ま
り、チタン炭化物粒子表面へのＣｒの拡散を促進させる
ことができる。また、焼結工程において、成形体をアル
ミナ粉末を敷いたるつぼの上で溶解することが望まし
い。この方法により、るつぼと成形体の反応を防止する
ことができる。In the second aspect of the present invention, it is preferable that the method further comprises a reducing step of reducing the Cu powder in hydrogen at a temperature of 200 to 500 ° C. before the mixing step.
By this reduction step, the wettability between Cu and titanium carbide or vanadium carbide is improved, and defects at the interface can be reduced. After the mixing step, it is desirable to repeat the forming step and the sintering step two or more times. Defects in the structure can be further reduced by repeating the forming step and the sintering step two or more times. The sintering process
It is desirable to carry out in a vacuum atmosphere of 2 × 10 −1 Pa or less. In the mixing step, it is desirable to further mix chromium (Cr) powder having an average particle diameter of 30 to 200 μm. The added Cr particles diffuse into the titanium carbide particle surface during sintering, thereby improving the adhesion between the copper matrix and the titanium carbide particles and suppressing defects at the interface. Further, the mixing step includes a step of mixing the powder of Cr and the powder of titanium carbide or vanadium carbide;
desirably, a step of mixing a mixed powder of r and titanium carbide or vanadium carbide with a Cu powder. By mixing in this order, the possibility that the titanium carbide powder and the Cr powder are adjacent to each other in the compact increases, and the diffusion of Cr to the surface of the titanium carbide particles can be promoted. In the sintering step, it is desirable to dissolve the compact on a crucible on which alumina powder is laid. By this method, the reaction between the crucible and the molded body can be prevented.
【００１３】[0013]
【発明の実施の形態】以下図面を参照して、本発明の実
施の形態について説明する。本発明の実施の形態では、
まず、真空バルブ用接点材料が使用される真空バルブの
接点部分の構成を示し、実施例１乃至２３と、比較例１
乃至１５とからなり、銅（Ｃｕ）−炭化チタン（Ｔｉ
Ｃ）またはＣｕ−ＴｉＣ−クロム（Ｃｒ）からなる接点
材料を例に取って説明する。Embodiments of the present invention will be described below with reference to the drawings. In the embodiment of the present invention,
First, the structure of the contact portion of a vacuum valve using a contact material for a vacuum valve is shown, and Examples 1 to 23 and Comparative Example 1 are shown.
To 15 and copper (Cu) -titanium carbide (Ti
The contact material made of C) or Cu-TiC-chromium (Cr) will be described as an example.
【００１４】（真空バルブの構成）図１は、本発明の実
施の形態に係る接点材料が用いられる真空バルブの接点
部分の構成を示す断面図である。図１に示すように、真
空バルブの一方の接点１３ａは電極７の先端に接続さ
れ、電極７は導電棒５の先端に接続されている。真空バ
ルブの他方の接点１３ｂは電極８の先端に接続され、電
極８は導電棒６の先端に接続されている。導電棒５、６
は、接点１３ａ、１３ｂにおいて互いに接続するよう
に、直線状に配置されている。導電棒６の周りには、所
定の間隔を置いてベローズ９が配置されている。ベロー
ズ９は、電動棒６の直線方向に伸縮自在な絶縁物からな
る。ベローズ９の周りには、所定の間隔を置いてアーク
シールド１０が配置されている。アークシールド１０
は、接点部分の電位分布を整えるための導電体であり、
その一部が導電棒６に接続されている。ベローズ９の一
端は、アークシールド１０に接続されている。アークシ
ールド１０の周りには、所定の間隔を置いてアークシー
ルド１１が配置されている。アークシールド１１も、接
点部分の電位分布を整えるための導電体であり、導電棒
５、６、電極７、８、及び接点１３ａ、１３ｂを囲うよ
うに配置されている。アークシールド１１の内部は、遮
断室１を形成している。アークシールド１１の周りに
は、所定の間隔を置いて筒状の絶縁容器２が配置されて
いる。絶縁容器２の両端には、封止金具３ａ、３ｂを介
して蓋体４ａ、４ｂが接続されている。アークシールド
１１は蓋体４ａに接続され、ベローズ９の他端は、蓋体
４ｂに接続されている。また、導電棒５は、蓋体４ａに
接続されている。導電棒６が直線方向に動くことで、ベ
ローズ９が伸縮し、接点１３ａと接点１３ｂとの接触／
分離が制御される。(Structure of Vacuum Valve) FIG. 1 is a sectional view showing the structure of a contact portion of a vacuum valve using a contact material according to an embodiment of the present invention. As shown in FIG. 1, one contact 13a of the vacuum valve is connected to the tip of the electrode 7, and the electrode 7 is connected to the tip of the conductive rod 5. The other contact 13b of the vacuum valve is connected to the tip of the electrode 8, and the electrode 8 is connected to the tip of the conductive rod 6. Conductive rods 5, 6
Are arranged linearly so as to be connected to each other at the contacts 13a and 13b. Bellows 9 is arranged around conductive bar 6 at a predetermined interval. The bellows 9 is made of an insulator that can be extended and contracted in the linear direction of the electric rod 6. An arc shield 10 is arranged around the bellows 9 at a predetermined interval. Arc shield 10
Is a conductor for adjusting the potential distribution of the contact portion,
A part thereof is connected to the conductive rod 6. One end of the bellows 9 is connected to the arc shield 10. An arc shield 11 is arranged around the arc shield 10 at a predetermined interval. The arc shield 11 is also a conductor for adjusting the potential distribution of the contact portion, and is arranged so as to surround the conductive rods 5, 6, the electrodes 7, 8 and the contacts 13a, 13b. The inside of the arc shield 11 forms the cutoff chamber 1. Around the arc shield 11, a cylindrical insulating container 2 is arranged at a predetermined interval. Lids 4a, 4b are connected to both ends of the insulating container 2 via sealing fittings 3a, 3b. The arc shield 11 is connected to the lid 4a, and the other end of the bellows 9 is connected to the lid 4b. The conductive rod 5 is connected to the lid 4a. When the conductive rod 6 moves in a linear direction, the bellows 9 expands and contracts, and the contact / contact between the contact 13a and the contact 13b /
Separation is controlled.
【００１５】（接点材料の製造方法の基本工程）図２
は、本発明の実施の形態に係る真空バルブ用接点材料の
製造方法の基本工程を示すフローチャートである。図２
に示すように、真空バルブ用接点材料は以下に示すステ
ップにより製造することができる。(Basic Process of Manufacturing Method of Contact Material) FIG.
1 is a flowchart showing basic steps of a method for manufacturing a contact material for a vacuum valve according to an embodiment of the present invention. FIG.
As shown in the above, the contact material for a vacuum valve can be manufactured by the following steps.
【００１６】（イ）まず、ステップＳ１において、平均
粒径が３０乃至２００μｍの銅（Ｃｕ）の粉末と、平均
粒径が３０乃至２００μｍの炭化チタン（ＴｉＣ）の粉
末とを混合して混合粉末を作る混合工程を実施する。Ｃ
ｕとＴｉＣの平均粒径は、同一である必要は無く、両者
の平均粒径がそれぞれ３０乃至２００μｍの範囲内に収
まっていれば十分である。また、ＣｕとＴｉＣの重量比
は、Ｃｕが７５〜９５％、ＴｉＣが２５〜５％の範囲内
であれば構わない。さらに、図２には示さないが、ステ
ップＳ１の混合工程の前に、ステップＳ０においてＣｕ
の粉末を水素中で２００乃至５００℃の温度で還元処理
する。なお、基本工程においては、平均粒径が４５μｍ
のＣｕ粉末と、平均粒径が４５μｍのＴｉＣ粉末とを混
合する。また、重量比は、Ｃｕが８５％、ＴｉＣが１５
％である。さらに、還元処理時の温度は、３００℃であ
る。(A) First, in step S1, a powder of copper (Cu) having an average particle size of 30 to 200 μm and a powder of titanium carbide (TiC) having an average particle size of 30 to 200 μm are mixed. Perform a mixing process to make C
The average particle diameters of u and TiC do not need to be the same, and it is sufficient if the average particle diameters of both are within the range of 30 to 200 μm. The weight ratio of Cu to TiC may be within the range of 75 to 95% for Cu and 25 to 5% for TiC. Further, although not shown in FIG. 2, before the mixing process in step S1, Cu
Is reduced in hydrogen at a temperature of 200 to 500 ° C. In the basic process, the average particle size was 45 μm.
And a TiC powder having an average particle diameter of 45 μm are mixed. The weight ratio of Cu was 85% and TiC was 15%.
%. Further, the temperature during the reduction treatment is 300 ° C.
【００１７】（ロ）次に、ステップＳ２において、Ｃｕ
−ＴｉＣの混合粉末に圧力を加えて成形して成形体を作
る成形工程を実施する。混合粉末は金属製の割型或いは
ゴム製の型に入れられて圧力が加えられる。金属製の割
型は、混合粉末が入る容器と容器内の混合粉末に圧力を
加える蓋体からなる。混合粉末は、容器と蓋体とで構成
される形状に成形される。一方、ゴム製の型の場合、混
合粉末が入った型を油或いは水の中に入れ、油、水に圧
力を加えることで、ゴム製の型の中の混合粉末に圧力を
加えて成形体を作る。ゴム製の型を用いた場合、油、水
を媒体として圧力が加えれれるため、混合粉末に均一に
圧力が加えられ、均一な相対密度を有する成形体を作る
ことができる。基本工程においては、混合粉末に加える
圧力は８トン程度であり、成形体の形状は直径５２．５
ｍｍ、厚さ７ｍｍの円盤状である。(B) Next, in step S2, Cu
-A molding step of applying pressure to the mixed powder of TiC to form a molded body is performed. The mixed powder is put into a metal split mold or a rubber mold and pressure is applied thereto. The metal split mold is composed of a container into which the mixed powder enters, and a lid for applying pressure to the mixed powder in the container. The mixed powder is formed into a shape composed of a container and a lid. On the other hand, in the case of a rubber mold, the mold containing the mixed powder is placed in oil or water, and pressure is applied to the oil and water to apply pressure to the mixed powder in the rubber mold to form a molded body. make. When a rubber mold is used, pressure is applied using oil and water as a medium, so that pressure is uniformly applied to the mixed powder and a molded body having a uniform relative density can be produced. In the basic process, the pressure applied to the mixed powder is about 8 tons, and the shape of the compact is 52.5 mm in diameter.
mm and a disk shape with a thickness of 7 mm.
【００１８】（ハ）最後に、ステップＳ３において、こ
の成形体を９５０度以上銅の融点以下の温度で焼結して
焼結体を作る焼結工程を実施する。具体的には、るつぼ
の中に溶浸材と成形体を積層して配置し、９５０〜１０
５０℃の焼結温度にて、２×１０−１Ｐａ以下の真空度
の雰囲気において成形体を焼結する。銅の融点は、１０
８３℃程度であるが、炉の温度を１０５０℃まで上昇さ
せることで、銅の融点以下の温度において、成形体を焼
結させるができる。炉の温度を１０５０℃以上に設定し
た場合、成形体の温度が銅の融点よりも高くなってしま
う惧れがある。基本工程においては、１０５０℃まで炉
の温度を上昇させることで、１０００℃の焼結温度にて
成形体を焼結させる。るつぼと成形体との間には、しき
粉としてアルミナ粉末を敷いて、カーボン製のるつぼと
成形体との反応を回避する。実施例２０乃至２３及び比
較例１２乃至１５では、溶浸材と成形体とＣｒ粉末とを
積層して焼結させた。なお、混合工程の後に、成形工程
及び焼結工程を２回繰り返して行った。(C) Finally, in step S3, a sintering step of sintering the formed body at a temperature of 950 ° C. or higher and lower than the melting point of copper to form a sintered body is performed. Specifically, the infiltration material and the formed body are laminated and arranged in a crucible, and 950-10
The molded body is sintered at a sintering temperature of 50 ° C. in an atmosphere having a degree of vacuum of 2 × 10 −1 Pa or less. The melting point of copper is 10
Although the temperature is about 83 ° C., by raising the temperature of the furnace to 1050 ° C., the molded body can be sintered at a temperature equal to or lower than the melting point of copper. When the temperature of the furnace is set to 1050 ° C. or higher, the temperature of the compact may be higher than the melting point of copper. In the basic process, the compact is sintered at a sintering temperature of 1000 ° C. by increasing the temperature of the furnace to 1050 ° C. Alumina powder is spread between the crucible and the molded body as a squeeze powder to avoid a reaction between the carbon crucible and the molded body. In Examples 20 to 23 and Comparative Examples 12 to 15, the infiltration material, the compact, and the Cr powder were laminated and sintered. After the mixing step, the molding step and the sintering step were repeated twice.
【００１９】（材料特性・電気特性の評価方法）図２を
参照して説明した上記の製造方法の基本工程に対して、
以下に示す実施例及び比較例において、いずれかの製造
パラメータを変化させて製造を行った。そして、各実施
例及び各比較例に係る接点材料に対して、以下に示す材
料特性・電気特性の評価を行った。なお、上記の基本工
程は、実施例２として示している。(Evaluation Method of Material Properties / Electrical Properties) The basic steps of the manufacturing method described with reference to FIG.
In the following Examples and Comparative Examples, production was performed while changing any of the production parameters. The contact material according to each of the examples and the comparative examples was evaluated for the following material properties and electrical properties. The above basic steps are shown as a second embodiment.
【００２０】＜導電率の評価方法＞ 製造した接点素材
の導電率を過電流法により測定した。<Evaluation Method of Conductivity> The conductivity of the manufactured contact material was measured by an overcurrent method.
【００２１】＜相対密度評価方法＞ 組成の異なり組織
的に均質な接点素材の相対密度を評価した。具体的に
は、局所的な相対密度を接点材料の径方向の組織写真か
ら測定することで、接点素材全体の相対密度を評価し
た。走査型電子顕微鏡による組織写真で調べたポアの量
と同じ素材をアルキメデス法による密度測定結果と組成
分析結果から計算される相対密度との相関性を予め調べ
ておくことで、局所的な相対密度の測定から接点素材全
体の相対密度を評価することができる。<Relative Density Evaluation Method> The relative densities of contact materials having different compositions and being systematically homogeneous were evaluated. Specifically, the relative density of the entire contact material was evaluated by measuring the local relative density from a photograph of the structure of the contact material in the radial direction. By examining in advance the correlation between the density measurement result by Archimedes method and the relative density calculated from the composition analysis result, the local relative density can be determined for the same material as the amount of pores examined in the micrograph of the structure with a scanning electron microscope. The relative density of the entire contact material can be evaluated from the measurement of the contact material.
【００２２】＜酸素含有量評価方法＞ 作製した接点素
材の酸素含有量を赤外線吸収法により測定した。<Oxygen Content Evaluation Method> The oxygen content of the prepared contact material was measured by an infrared absorption method.
【００２３】＜遮断特定評価方法＞ 接点素材から直径
５０ｍｍの接点材料を加工して取り出し、図１に示した
接点１３ａ、１３ｂとして真空バルブに組み込み、合成
遮断試験による遮断特性評価を行った。評価方法は、低
電流値（５ｋＡ）から徐々に遮断電流値を増大させ、最
初に遮断に失敗した電流値を遮断電流値とした。そし
て、実施例２（基本工程）に係る接点材料の遮断電流値
を１とした場合の相対値として評価し、０．８以上を合
格とした。<Evaluation Method for Specified Interruption> A contact material having a diameter of 50 mm was processed and taken out from the contact material, incorporated into a vacuum valve as the contacts 13a and 13b shown in FIG. 1, and the interruption characteristics were evaluated by a composite interruption test. In the evaluation method, the breaking current value was gradually increased from a low current value (5 kA), and the current value at which the breaking failed first was taken as the breaking current value. Then, it was evaluated as a relative value when the breaking current value of the contact material according to Example 2 (basic process) was set to 1, and 0.8 or more was regarded as a pass.
【００２４】＜通電特性評価方法＞ 接点素材から直径
５０ｍｍの接点材料を加工して取り出し、図１に示した
接点１３ａ、１３ｂとして真空バルブに組み込み、遮断
特性評価を行った。真空バルブに定格電流を流し、定常
状態での通電軸の温度上昇値を測定した。そして、実施
例２（基本工程）に係る接点材料の温度上昇値を１とし
た場合の相対値として評価し、１．２以下を合格とし
た。<Electrification Characteristics Evaluation Method> A contact material having a diameter of 50 mm was processed and taken out from the contact material, incorporated into a vacuum valve as the contacts 13a and 13b shown in FIG. 1, and the cutoff characteristics were evaluated. A rated current was passed through the vacuum valve, and the temperature rise of the energized shaft in a steady state was measured. Then, it was evaluated as a relative value when the temperature rise value of the contact material according to Example 2 (basic process) was set to 1, and 1.2 or less was regarded as a pass.
【００２５】（実施例１〜３及び比較例１、２）図３及
び図４は、各実施例及び各比較例の製造パラメータ、及
び材料特性・電気特性の評価結果をまとめた表である。
以下、図３及び図４を参照して、各実施例及び各比較例
について説明する。まず、実施例１〜３及び比較例１、
２において、Ｃｕ−ＴｉＣ系の接点材料のＣｕの重量比
を７０〜９７％の範囲で変化させた。勿論、このときの
ＴｉＣの重量比は、３０〜３％の範囲で変化しているこ
とは言うまでも無い。その他の製造パラメータは、基本
工程と同じである。具体的には図３に示すように、Ｃｕ
とＴｉＣの重量比（Ｃｕ：ＴｉＣ）を、比較例１では７
０：３０とし、実施例１では７５：２５とし、実施例２
では８５：１５とし、実施例３では９５：５とし、比較
例２では９７：３とした。Ｃｕの重量比が７５〜９５％
の範囲にある実施例１〜３に係る接点材料は、いずれも
遮断特性及び通電特性が良好であった。しかし、Ｃｕの
重量比が７０％である比較例１に係る接点材料は、通電
特性を阻害するＴｉＣの比率が高すぎるため、十分な通
電性能を得ることができない。一方、Ｃｕの重量比が９
７％である比較例２は、ＴｉＣの比率が低すぎるため、
ＴｉＣによる遮断特性改善効果が十分得られなかった。(Examples 1 to 3 and Comparative Examples 1 and 2) FIGS. 3 and 4 are tables summarizing the production parameters and the evaluation results of material properties and electrical properties of each of the examples and comparative examples.
Hereinafter, each example and each comparative example will be described with reference to FIGS. 3 and 4. First, Examples 1 to 3 and Comparative Example 1,
In 2, the weight ratio of Cu of the Cu-TiC-based contact material was changed in the range of 70 to 97%. Needless to say, the weight ratio of TiC at this time varies in the range of 30 to 3%. Other manufacturing parameters are the same as in the basic process. Specifically, as shown in FIG.
The weight ratio of Cu and TiC (Cu: TiC) was 7 in Comparative Example 1.
0:30, 75:25 in the first embodiment, and the second embodiment
Is 85:15, Example 3 is 95: 5, and Comparative Example 2 is 97: 3. 75-95% by weight of Cu
All of the contact materials according to Examples 1 to 3 in the range of (1) to (4) had good breaking characteristics and current-carrying characteristics. However, the contact material according to Comparative Example 1, in which the weight ratio of Cu is 70%, cannot obtain sufficient current-carrying performance because the ratio of TiC that inhibits current-carrying characteristics is too high. On the other hand, when the weight ratio of Cu is 9
Comparative Example 2, which is 7%, has a too low TiC ratio.
The effect of improving the barrier properties by TiC was not sufficiently obtained.
【００２６】（実施例４〜６、比較例３、４）次に、実
施例４〜６、比較例３、４において、混合工程時に使用
する原料のＴｉＣ粉末の平均粒径を４５μｍに一定に保
ち、原料のＣｕ粉末の平均粒径を２５〜２５０μｍの範
囲で変化させた。その他の製造パラメータは、基本工程
と同じである。具体的には、Ｃｕ粉末の平均粒径を、比
較例３では２５μｍとし、実施例４では３０μｍとし、
実施例５では１００μｍとし、実施例６では２００μｍ
とし、比較例４では２５０μｍとした。Ｃｕ粉末の平均
粒径が３０〜２００μｍの範囲にある実施例４〜６に係
る接点材料は、いずれも遮断特性及び通電特性が良好で
あった。しかし、Ｃｕ粉末の平均粒径が２５μｍである
比較例３に係る接点材料は、酸素含有量が多く、十分な
遮断性能が得られなかった。一方、Ｃｕ粉末の平均粒径
が２５０μｍである比較例４に係る接点材料は、十分高
い成形体の相対密度が得られず、通電時の温度上昇が大
きくなってしまい、通電特性評価において不合格となっ
た。(Examples 4 to 6, Comparative Examples 3 and 4) Next, in Examples 4 to 6 and Comparative Examples 3 and 4, the average particle diameter of the TiC powder used as a raw material in the mixing step was kept at 45 μm. The average particle size of the raw material Cu powder was changed in the range of 25 to 250 μm. Other manufacturing parameters are the same as in the basic process. Specifically, the average particle size of the Cu powder was 25 μm in Comparative Example 3, 30 μm in Example 4,
In the fifth embodiment, the thickness is 100 μm, and in the sixth embodiment, the thickness is 200 μm.
In Comparative Example 4, the thickness was 250 μm. The contact materials according to Examples 4 to 6, in which the average particle size of the Cu powder was in the range of 30 to 200 µm, were all excellent in the breaking characteristics and the conduction characteristics. However, the contact material according to Comparative Example 3 in which the average particle size of the Cu powder was 25 μm had a large oxygen content, and was not able to obtain sufficient blocking performance. On the other hand, the contact material according to Comparative Example 4 in which the average particle size of the Cu powder was 250 μm could not obtain a sufficiently high relative density of the formed body, and the temperature rise during energization was large, so that the evaluation of energization characteristics was rejected It became.
【００２７】（実施例７〜９、比較例５、６）次に、実
施例７〜９、比較例５、６において、混合工程時に使用
する原料のＣｕ粉末の平均粒径を４５μｍに一定に保
ち、ＴｉＣ粉末の平均粒径を２５〜２５０μｍの範囲で
変化させた。その他の製造パラメータは、基本工程と同
じである。具体的には、ＴｉＣの平均粒径を、比較例５
では２５μｍとし、実施例７では３０μｍとし、実施例
８では１００μｍとし、実施例９では２００μｍとし、
比較例６では２５０μｍとした。ＴｉＣ粉末の平均粒径
が３０〜２００μｍの範囲にある実施例７〜９に係る接
点材料は、いずれも遮断特性及び通電特性が良好であっ
た。しかし、ＴｉＣ粉末の平均粒径が２５μｍである比
較例５に係る接点材料は、酸素含有量が極めて多く、十
分な遮断性能が得られなかった。一方、ＴｉＣ粉末の平
均粒径が２５０μｍである比較例６に係る接点材料は、
粗大なＴｉＣ粒子の中心部で局所的な温度上昇が発生す
るため十分な遮断性能が得られなかった。(Examples 7 to 9 and Comparative Examples 5 and 6) Next, in Examples 7 to 9 and Comparative Examples 5 and 6, the average particle size of the Cu powder as a raw material used in the mixing step was kept at 45 μm. Keeping this, the average particle size of the TiC powder was changed in the range of 25 to 250 μm. Other manufacturing parameters are the same as in the basic process. Specifically, the average particle size of TiC was determined by comparing Comparative Example 5
In Example 7, it was 30 μm, in Example 7, it was 100 μm, in Example 9, it was 200 μm,
In Comparative Example 6, the thickness was 250 μm. All of the contact materials according to Examples 7 to 9 in which the average particle size of the TiC powder was in the range of 30 to 200 µm had good breaking characteristics and current-carrying characteristics. However, the contact material according to Comparative Example 5, in which the average particle size of the TiC powder was 25 μm, had an extremely high oxygen content, and did not provide sufficient blocking performance. On the other hand, the contact material according to Comparative Example 6 in which the average particle size of the TiC powder is 250 μm,
Sufficient blocking performance could not be obtained due to local temperature rise at the center of the coarse TiC particles.
【００２８】（実施例１０〜１２、比較例７）次に、実
施例１０〜１２、比較例７において、焼結工程時の焼結
温度を９００〜１０５０℃の範囲で変化させた。その他
の製造パラメータは、基本工程と同じである。具体的に
は、焼結温度を、比較例７では９００℃とし、実施例１
０では９５０℃とし、実施例１１では１０００℃とし、
実施例１２では１０５０℃とした。焼結温度が９５０〜
１０５０℃の範囲にある実施例１０〜１２に係る接点材
料は、いずれも遮断特性及び通電特性が良好であった。
しかし、焼結温度が９００℃である比較例７に係る接点
材料は、十分な焼結密度が得られず、酸素含有量も多い
ため、遮断特性が極めて悪かった。(Examples 10 to 12, Comparative Example 7) Next, in Examples 10 to 12 and Comparative Example 7, the sintering temperature during the sintering step was changed in the range of 900 to 1050 ° C. Other manufacturing parameters are the same as in the basic process. Specifically, the sintering temperature was set to 900 ° C. in Comparative Example 7, and Example 1 was used.
0 is 950 ° C., and Example 11 is 1000 ° C.
In Example 12, the temperature was set to 1050 ° C. The sintering temperature is 950
All the contact materials according to Examples 10 to 12 in the range of 1050 ° C. had good breaking characteristics and current-carrying characteristics.
However, the contact material according to Comparative Example 7, in which the sintering temperature was 900 ° C., was not able to obtain a sufficient sintering density and had a high oxygen content, so that the breaking characteristics were extremely poor.
【００２９】（実施例１３〜１５、比較例８、９）次
に、実施例１３〜１５、比較例８、９において、原料の
Ｃｕ粉末を水素中で還元する還元温度を１５０〜６００
℃の範囲で変化させた。その他の製造パラメータは、基
本工程と同じである。具体的には、還元温度を、比較例
８では１５０℃とし、実施例１３では２００℃とし、実
施例１４では３００℃とし、実施例１５では５００℃と
し、比較例９では６００℃とした。還元温度が２００〜
５００℃の範囲にある実施例１３〜１５に係る接点材料
は、いずれも遮断特性及び通電特性が良好であった。し
かし、還元温度が１５０℃である比較例８に係る接点材
料は、水素還元が不十分であるため酸素含有量が多くな
り、十分な遮断性能が得られなかった。一方、還元温度
が６００℃である比較例９に係る接点材料は、Ｃｕ粒子
が結合して粗大化してしまっているため、十分高い焼結
密度が得られず、遮断特性が不十分であった。(Examples 13 to 15, Comparative Examples 8 and 9) Next, in Examples 13 to 15 and Comparative Examples 8 and 9, the reduction temperature for reducing the raw material Cu powder in hydrogen was set to 150 to 600.
The temperature was varied in the range of ° C. Other manufacturing parameters are the same as in the basic process. Specifically, the reduction temperature was 150 ° C. in Comparative Example 8, 200 ° C. in Example 13, 300 ° C. in Example 14, 500 ° C. in Example 15, and 600 ° C. in Comparative Example 9. Reduction temperature 200 ~
The contact materials according to Examples 13 to 15 in the range of 500 ° C. all had good breaking characteristics and current-carrying characteristics. However, the contact material according to Comparative Example 8, in which the reduction temperature was 150 ° C., was insufficient in hydrogen reduction, so that the oxygen content was large, and sufficient cutoff performance could not be obtained. On the other hand, the contact material according to Comparative Example 9, in which the reduction temperature was 600 ° C., was not sufficiently high in sintering density because the Cu particles were bonded and coarsened, and the breaking characteristics were insufficient. .
【００３０】（実施例１６、１７、比較例１０）次に、
実施例１６、１７、比較例１０において、混合工程の後
に成形工程及び焼結工程を繰り返す回数を１〜３回の範
囲で変化させた。その他の製造パラメータは、基本工程
と同じである。具体的には、成形工程と焼結工程の繰り
返し回数を、比較例１０では１回とし、実施例１６では
２回とし、実施例１７では３回とした。ここで、繰り返
し回数が１回とは、混合工程後に成形工程及び焼結工程
をそれぞれ１回づつ行い、成形工程と焼結工程を繰り返
し行わないことを意味する。繰り返し成形・焼成を行わ
ない比較例１０に係る接点材料は、十分大きな相対密度
が得られず、遮断特性、通電特性ともに不合格であっ
た。しかし、成形・焼成を２〜３回繰り返した実施例１
６、１７に係る接点材料は、十分大きな相対密度が得ら
れ、遮断特性及び通電特性が良好であった。４回以上繰
り返し実施した場合も同様に良好な遮断特性及び通電特
性が得られるものと推測される。(Examples 16 and 17, Comparative Example 10)
In Examples 16 and 17 and Comparative Example 10, the number of times the molding step and the sintering step were repeated after the mixing step was changed in the range of 1 to 3 times. Other manufacturing parameters are the same as in the basic process. Specifically, the number of repetitions of the molding step and the sintering step was set to one in Comparative Example 10, two in Example 16, and three in Example 17. Here, one repetition means that the molding step and the sintering step are performed once each after the mixing step, and the molding step and the sintering step are not repeated. The contact material according to Comparative Example 10 in which repetitive molding and firing were not performed could not obtain a sufficiently large relative density, and failed both the cutoff characteristics and the conduction characteristics. However, Example 1 in which molding and firing were repeated two to three times
The contact materials according to Nos. 6 and 17 had sufficiently high relative densities, and had good breaking characteristics and current-carrying characteristics. It is presumed that good cutoff characteristics and current-carrying characteristics can be similarly obtained when repeated four or more times.
【００３１】（実施例１８、１９、比較例１１）焼結工
程における真空度を２×１０−２〜３×１０−１Ｐａの
範囲で変化させた。その他の製造パラメータは、基本工
程と同じである。具体的には、焼結工程における真空度
を、実施例１８では２×１０−２Ｐａとし、実施例１９
では２×１０−１Ｐａとし、比較例１１では３×１０
−１Ｐａとした。焼結工程における真空度が２×１０
−１Ｐａ以下である実施例１８、１９に係る接点材料
は、いずれも遮断特性及び通電特性が良好であった。し
かし、真空度が３×１０−１Ｐａである比較例１１に係
る接点材料は、酸素含有量が多く、十分な遮断性能が得
られなかった。なお、２×１０−１Ｐａより高真空の雰
囲気において焼結工程を実施した場合も、実施例１８、
１９と同様に良好な遮断特性、通電特性が得られるもの
と推測される。(Examples 18 and 19, Comparative Example 11) The degree of vacuum in the sintering step was changed in the range of 2 × 10 −2 to 3 × 10 −1 Pa. Other manufacturing parameters are the same as in the basic process. Specifically, the degree of vacuum in the sintering step was set to 2 × 10 −2 Pa in Example 18;
In the comparative example 11, 3 × 10 -1 Pa was set.
−1 Pa. The degree of vacuum in the sintering process is 2 × 10
Each of the contact materials according to Examples 18 and 19 having a pressure of -1 Pa or less had good breaking characteristics and current-carrying characteristics. However, the contact material according to Comparative Example 11, in which the degree of vacuum was 3 × 10 −1 Pa, had a large oxygen content and could not obtain sufficient blocking performance. Incidentally, 2 × 10 when carrying out the sintering step also in -1 Pa than the high-vacuum atmosphere, in Example 18,
It is presumed that good breaking characteristics and good current-carrying characteristics can be obtained as in the case of No. 19.
【００３２】（実施例２０、２１、比較例１２）次に、
混合工程で混合する原料粉末として、Ｃｕ粉末とＴｉＣ
粉末の他にＣｒ粉末を更に混合して作成されたＣｕ−Ｔ
ｉＣ−Ｃｒ系の接点材料について行った実験について説
明する。まず、実施例２０〜２１、比較例１２におい
て、ＴｉＣの重量比を１５％に一定に保ち、Ｃｕの重量
比を８４〜７５％、Ｃｒの重量比を１〜１０％の範囲で
それぞれ変化させた。その他の製造パラメータは、基本
工程と同じである。具体的には、実施例２０では、Ｃｕ
の重量比を８４％、Ｃｒの重量比を１％とし、実施例２
１では、Ｃｕの重量比を８０％、Ｃｒの重量比を５％と
し、比較例１２では、Ｃｕの重量比を７５％、Ｃｒの重
量比を１０％とした。Ｃｒの重量比が５％以下の実施例
２０、２１に係る接点材料は、Ｃｒの添加により導電率
が低下しているものの相対密度が上昇しているため、通
電特性を満足することができた。また、相対密度の上昇
により酸素含有量も低く抑えられるため、遮断特性はＣ
ｒの添加を行わない場合より向上している。一方。Ｃｒ
の重量比が１０％である比較例１２に係る接点材料は、
十分な通電性能が得られなかった。(Examples 20 and 21, Comparative Example 12)
Cu powder and TiC are used as raw material powders to be mixed in the mixing step.
Cu-T prepared by further mixing Cr powder in addition to powder
An experiment performed on an iC-Cr contact material will be described. First, in Examples 20 to 21 and Comparative Example 12, the weight ratio of TiC was kept constant at 15%, the weight ratio of Cu was changed in the range of 84 to 75%, and the weight ratio of Cr was changed in the range of 1 to 10%. Was. Other manufacturing parameters are the same as in the basic process. Specifically, in Example 20, Cu
In Example 2, the weight ratio of Cr was 84% and the weight ratio of Cr was 1%.
In Example 1, the weight ratio of Cu was 80%, and the weight ratio of Cr was 5%. In Comparative Example 12, the weight ratio of Cu was 75%, and the weight ratio of Cr was 10%. In the contact materials according to Examples 20 and 21 in which the weight ratio of Cr was 5% or less, although the conductivity was decreased by the addition of Cr, the relative density was increased, so that the current-carrying characteristics could be satisfied. . In addition, since the oxygen content can be suppressed low due to the increase in the relative density, the cutoff characteristic is C
This is more improved than when r is not added. on the other hand. Cr
The contact material according to Comparative Example 12 in which the weight ratio of
Sufficient current-carrying performance was not obtained.
【００３３】（実施例２２、比較例１３、１４）次に、
実施例２２、比較例１３、１４において、混合工程時の
Ｃｕ、ＴｉＣ、Ｃｒを混合する順番を変化させた。な
お、Ｃｕ：ＴｉＣ：Ｃｒの重量比を８３：１５：２の割
合で変化させずに混合した。その他の製造パラメータ
は、基本工程と同じである。具体的には、実施例２２で
は、まずＣｒ粉末にＴｉＣ粉末を徐々に添加して混合し
た混合粉末に、さらにＣｕ粉末を添加した。比較例１３
では、まずＣｒ粉末にＣｕ粉末を混合させ、さらにＴｉ
Ｃ粉末を加えて混合した。比較例１４では、まずＣｕ粉
末にＴｉＣ粉末を混合させ、さらにＣｒ粉末を加えて混
合した。実施例２２に係る接点材料は、成形体中におい
てＣｒ粒子がＴｉＣ粒子と隣接する確率が高くなるの
で、ＴｉＣ粒子表面へのＣｒの拡散が促進され、Ｃｕと
ＴｉＣの界面の濡れ性が改善された。また、酸素含有量
が少なく、且つ相対密度の高い材料の製造が可能であっ
た。従って、十分な遮断特性、通電特性が得られた。一
方、比較例１３、１４に係る接点材料は、十分な焼結密
度が得られず、遮断性能が不十分となった。(Example 22, Comparative Examples 13 and 14)
In Example 22, Comparative Examples 13 and 14, the order of mixing Cu, TiC, and Cr in the mixing step was changed. The mixing was performed without changing the weight ratio of Cu: TiC: Cr at a ratio of 83: 15: 2. Other manufacturing parameters are the same as in the basic process. Specifically, in Example 22, first, Cu powder was further added to a mixed powder obtained by gradually adding and mixing TiC powder to Cr powder. Comparative Example 13
Then, first mix Cu powder with Cr powder,
C powder was added and mixed. In Comparative Example 14, first, TiC powder was mixed with Cu powder, and further, Cr powder was added and mixed. In the contact material according to Example 22, the probability that the Cr particles were adjacent to the TiC particles in the molded body was increased, so that diffusion of Cr to the surface of the TiC particles was promoted, and the wettability of the interface between Cu and TiC was improved. Was. In addition, it was possible to produce a material having a low oxygen content and a high relative density. Therefore, sufficient cutoff characteristics and conduction characteristics were obtained. On the other hand, the contact materials according to Comparative Examples 13 and 14 did not have sufficient sintering density, and had insufficient breaking performance.
【００３４】（実施例２３、比較例１５）次に、焼結時
に成形体をアルミナしき粉の上に載せて処理する場合
と、アルミナしき粉を使用せずに直接カーボンるつぼ上
に載せた場合とで評価した。成形体をアルミナしき粉の
上に載せた実施例２３に係る接点材料は、導電率、相対
密度、酸素含有量ともに良好であり、十分な遮断性能と
通電性能が得られた。しかし、成形体をカーボンるつぼ
内に直接載せた比較例１５に係る接点材料は、接点素材
がるつぼと反応して固着してしまい、接点製造が不可能
であった。(Example 23, Comparative Example 15) Next, the case where the compact is placed on alumina dust during sintering and treated, and the case where it is placed directly on a carbon crucible without using alumina dust And evaluated. The contact material according to Example 23, in which the compact was placed on alumina dust, had good electrical conductivity, relative density, and oxygen content, and obtained sufficient breaking performance and current-carrying performance. However, in the case of the contact material according to Comparative Example 15 in which the molded body was directly placed in the carbon crucible, the contact material reacted with the crucible and was fixed, making it impossible to manufacture the contact.
【００３５】以上説明したように、本発明の実施の形態
に係る真空バルブ用接点材料は、重量比が７５乃至９５
％の銅（Ｃｕ）と、重量比が５乃至２５％の炭化チタン
（ＴｉＣ）とから構成されているため、ＴｉＣのアーク
拡散作用による大電流遮断性能と、Ｃｕによる大電流通
電性能の両者を損なうことなく発揮させることができ
る。接点材料は、重量比が５％以下であるクロム（Ｃ
ｒ）を更に有することにより、接点材料中に発生する欠
陥を極小化することができ、さらに優れた大電流遮断特
性を得ることができる。また、ＴｉＣは、平均粒径が２
００μｍ以下の粒子状であり、銅マトリックスの中に分
散していることにより、焼結時にＣｕがＴｉＣ粒子間に
十分拡散することが可能であり、欠陥の少ない銅マトリ
ックスを形成することができる。また、成形工程及び焼
結工程を２回以上繰り返し行うことで、組織中の欠陥を
さらに低減することができる。混合工程の前に、Ｃｕ粉
末を水素中で２００乃至２５０℃の温度で還元処理する
ことにより、ＴｉＣとＣｕの濡れ性が改善され、界面の
欠陥を低減することができる。As described above, the contact material for a vacuum valve according to the embodiment of the present invention has a weight ratio of 75 to 95.
% Of copper (Cu) and titanium carbide (TiC) having a weight ratio of 5 to 25%, so that both the large current interrupting performance by the arc diffusion action of TiC and the large current carrying performance by Cu are improved. It can be demonstrated without loss. The contact material is made of chromium (C
By further having r), defects generated in the contact material can be minimized, and more excellent large current interruption characteristics can be obtained. TiC has an average particle size of 2
By having a particle size of 00 μm or less and being dispersed in the copper matrix, Cu can sufficiently diffuse between the TiC particles during sintering, and a copper matrix with few defects can be formed. Further, by repeating the forming step and the sintering step two or more times, defects in the structure can be further reduced. By subjecting the Cu powder to a reduction treatment at a temperature of 200 to 250 ° C. in hydrogen before the mixing step, the wettability between TiC and Cu is improved, and defects at the interface can be reduced.
【００３６】なお、本発明の実施の形態では、Ｃｕ−Ｔ
ｉＣ及びＣｕ−ＴｉＣ−Ｃｒ系の接点材料に係る実施例
及び比較例について説明した。しかし、本発明はこれに
限定されるわけではなく、ＴｉＣの代わりに炭化バナジ
ウム（ＶＣ）を用いた場合でも同様な効果が得れること
が、発明者の行った実験から明らかにされている。In the embodiment of the present invention, Cu-T
Examples and comparative examples relating to iC and Cu-TiC-Cr-based contact materials have been described. However, the present invention is not limited to this, and it is clear from experiments performed by the inventor that similar effects can be obtained even when vanadium carbide (VC) is used instead of TiC.
【００３７】[0037]
【発明の効果】以上説明したように本発明によれば、優
れた大電流遮断特性及び大電流通電特性を兼備する真空
バルブ用接点材料及びその製造方法を提供することがで
きる。As described above, according to the present invention, it is possible to provide a contact material for a vacuum valve having both excellent large current interrupting characteristics and large current carrying characteristics, and a method of manufacturing the same.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の実施の形態に係る接点材料が組み込ま
れる真空バルブの接点部分の構成を示す断面図である。FIG. 1 is a cross-sectional view showing a configuration of a contact portion of a vacuum valve into which a contact material according to an embodiment of the present invention is incorporated.
【図２】本発明の実施の形態に係る真空バルブ用接点材
料の製造方法の基本工程を示すフローチャートである。FIG. 2 is a flowchart showing basic steps of a method for manufacturing a contact material for a vacuum valve according to an embodiment of the present invention.
【図３】本発明の実施の形態に係る各実施例及び各比較
例の製造パラメータ及び材料特性・電気特性の評価結果
をまとめた表である（その１）。FIG. 3 is a table summarizing production parameters and evaluation results of material characteristics and electric characteristics of each of Examples and Comparative Examples according to the embodiment of the present invention (part 1).
【図４】本発明の実施の形態に係る各実施例及び各比較
例の製造パラメータ及び材料特性・電気特性の評価結果
をまとめた表である（その２）。FIG. 4 is a table summarizing manufacturing parameters and evaluation results of material characteristics and electrical characteristics of each of the examples and comparative examples according to the embodiment of the present invention (part 2).
１ 遮断室 ２ 絶縁容器 ３ａ、３ｂ 封止金具 ４ａ、４ｂ 蓋体 ５、６ 導電棒 ７、８ 電極 ９ ベローズ １０、１１ アークシールド １３ａ、１３ｂ 接点 DESCRIPTION OF SYMBOLS 1 Shutoff room 2 Insulating container 3a, 3b Sealing fitting 4a, 4b Lid 5, 6 Conductive rod 7, 8 Electrode 9 Bellows 10, 11 Arc shield 13a, 13b Contact
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｈ 11/04 Ｈ０１Ｈ 11/04 Ｄ 33/66 33/66 Ｂ // Ｂ２２Ｆ 1/00 Ｂ２２Ｆ 1/00 Ｃ Ｃ２２Ｃ 9/00 Ｃ２２Ｃ 9/00 (72)発明者 山本 敦史 東京都府中市東芝町１番地 株式会社東芝 府中事業所内 (72)発明者 草野 貴史 東京都府中市東芝町１番地 株式会社東芝 府中事業所内 Ｆターム(参考） 4K018 AA04 AB02 AC01 BA02 BA11 BA20 BB04 BC01 BC12 DA11 DA32 DA39 EA51 KA34 4K020 AA22 AC04 BB29 5G023 AA05 BA11 CA09 CA21 CA33 5G026 BA01 BB02 BB14 BB18 BB30 BC05 BC09 5G050 AA12 AA13 AA48 AA50 BA01 BA03 CA01 CA06 DA03 EA02 EA06 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H01H 11/04 H01H 11/04 D 33/66 33/66 B // B22F 1/00 B22F 1/00 C C22C 9 / 00C22C 9/00 (72) Inventor Atsushi Yamamoto 1 Toshiba-cho, Fuchu-shi, Tokyo Inside the Toshiba Fuchu Works Co., Ltd. Reference) 4K018 AA04 AB02 AC01 BA02 BA11 BA20 BB04 BC01 BC12 DA11 DA32 DA39 EA51 KA34 4K020 AA22 AC04 BB29 5G023 AA05 BA11 CA09 CA21 CA33 5G026 BA01 BB02 BB14 BB18 BB30 BC05 BC09 5G050 AA01 BA03 A03 AA03 AA03 AA18 AA18 AA13 AA18 AA18 AA13 AA13 AA18
Claims (13)
炭化物の少なくとも一方を含む炭化物とを少なくとも有
することを特徴とする真空バルブ用接点材料。1. A contact material for a vacuum valve, comprising at least copper having a weight ratio of 75 to 95% and a carbide having a weight ratio of 5 to 25% containing at least one of titanium carbide and vanadium carbide.
ことを特徴とする請求項１記載の真空バルブ用接点材
料。2. The contact material for a vacuum valve according to claim 1, further comprising chromium having a weight ratio of 5% or less.
炭化物は、平均粒径が２００μｍ以下の粒子状であり、
銅マトリックスの中に分散していることを特徴とする請
求項１または２記載の真空バルブ用接点材料。3. The titanium carbide or the vanadium carbide is in the form of particles having an average particle size of 200 μm or less,
The contact material for a vacuum valve according to claim 1, wherein the contact material is dispersed in a copper matrix.
末と、平均粒径が３０乃至２００μｍのチタン炭化物或
いはバナジウム炭化物の粉末とを混合して混合粉末を作
る混合工程と、 前記混合粉末に圧力を加えて成形して成形体を作る成形
工程と、 前記成形体を９５０度以上銅の融点以下の温度で焼結し
て焼結体を作る焼結工程とを少なくとも有することを特
徴とする真空バルブ用接点材料の製造方法。4. A mixing step of mixing a copper powder having an average particle diameter of 30 to 200 μm with a titanium carbide or vanadium carbide powder having an average particle diameter of 30 to 200 μm to form a mixed powder; It is characterized by having at least a forming step of forming a molded body by applying pressure and a sintering step of sintering the formed body at a temperature of 950 ° C. or higher and a melting point of copper or lower to form a sintered body. Manufacturing method of contact material for vacuum valve.
素中で２００乃至５００℃の温度で還元処理する還元工
程を更に有することを特徴とする請求項４記載の真空バ
ルブ用接点材料の製造方法。5. The contact material for a vacuum valve according to claim 4, further comprising a reduction step of reducing the copper powder in hydrogen at a temperature of 200 to 500 ° C. before the mixing step. Manufacturing method.
前記焼結工程を２回以上繰り返し行うことを特徴とする
請求項４または５記載の真空バルブ用接点材料の製造方
法。6. The method according to claim 4, wherein the forming step and the sintering step are repeated twice or more after the mixing step.
の真空雰囲気において実施されることを特徴とする請求
項４乃至６いずれか１記載の真空バルブ用接点材料の製
造方法。7. The method for manufacturing a contact material for a vacuum valve according to claim 4, wherein the sintering step is performed in a vacuum atmosphere of 2 × 10 −1 Pa or less.
乃至２００μｍのクロムの粉末をさらに混合する請求項
４記載の真空バルブ用接点材料の製造方法。8. In the mixing step, the average particle size is 30.
5. The method for producing a contact material for a vacuum valve according to claim 4, further comprising mixing chromium powder having a thickness of from 200 to 200 [mu] m.
ウム炭化物の粉末を混合するステップと、 前記クロムと前記チタン炭化物或いは前記バナジウム炭
化物の混合粉末と、前記銅の粉末を混合するステップと
から成ることを特徴とする請求項８記載の真空バルブ用
接点材料の製造方法。9. The mixing step includes: mixing the chromium powder with the titanium carbide or the vanadium carbide powder; and mixing the chromium and the titanium carbide or the vanadium carbide mixed powder with the copper powder. 9. The method for producing a contact material for a vacuum valve according to claim 8, comprising a step of mixing.
水素中で２００乃至５００℃の温度で還元処理する還元
工程を更に有することを特徴とする請求項８または９記
載の真空バルブ用接点材料の製造方法。10. The vacuum valve according to claim 8, further comprising a reduction step of reducing the copper powder in hydrogen at a temperature of 200 to 500 ° C. before the mixing step. Manufacturing method of contact material.
び前記焼結工程を２回以上繰り返し行うことを特徴とす
る請求項８乃至１０いずれか１記載の真空バルブ用接点
材料の製造方法。11. The method according to claim 8, wherein the forming step and the sintering step are repeated two or more times after the mixing step.
下の真空雰囲気において実施されることを特徴とする請
求項８乃至１１いずれか１記載の真空バルブ用接点材料
の製造方法。12. The method of manufacturing a contact material for a vacuum valve according to claim 8, wherein the sintering step is performed in a vacuum atmosphere of 2 × 10 −1 Pa or less.
アルミナ粉末を敷いたるつぼの上で溶解することを特徴
とする請求項８乃至１２いずれか１記載の真空バルブ用
接点材料の製造方法。13. The method for producing a contact material for a vacuum valve according to claim 8, wherein in the sintering step, the compact is melted on a crucible on which alumina powder is laid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000280917A JP2002088437A (en) | 2000-09-14 | 2000-09-14 | Contact material for vacuum valve and its production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000280917A JP2002088437A (en) | 2000-09-14 | 2000-09-14 | Contact material for vacuum valve and its production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002088437A true JP2002088437A (en) | 2002-03-27 |
Family
ID=18765660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000280917A Pending JP2002088437A (en) | 2000-09-14 | 2000-09-14 | Contact material for vacuum valve and its production method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002088437A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007059107A (en) * | 2005-08-23 | 2007-03-08 | Hitachi Ltd | Electrical contact |
| CN100336929C (en) * | 2005-01-12 | 2007-09-12 | 中国科学院金属研究所 | In-situ produced titanium carbide dispersion strengthening copper based composite material and method for preparing the same |
| KR101078295B1 (en) * | 2009-12-15 | 2011-10-31 | 승림카본금속주식회사 | Method for manufacturing wc based electric contact and electric contact manufactured by the same |
| JP2012134014A (en) * | 2010-12-21 | 2012-07-12 | Toshiba Corp | Contact material for vacuum valve |
| JP2020509163A (en) * | 2016-12-13 | 2020-03-26 | イートン インテリジェント パワー リミテッドＥａｔｏｎ Ｉｎｔｅｌｌｉｇｅｎｔ Ｐｏｗｅｒ Ｌｉｍｉｔｅｄ | Improved electrical contact alloy for vacuum contactors |
| CN115354186A (en) * | 2022-07-04 | 2022-11-18 | 陕西斯瑞新材料股份有限公司 | Preparation method of extruded copper-chromium contact material |
-
2000
- 2000-09-14 JP JP2000280917A patent/JP2002088437A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336929C (en) * | 2005-01-12 | 2007-09-12 | 中国科学院金属研究所 | In-situ produced titanium carbide dispersion strengthening copper based composite material and method for preparing the same |
| JP2007059107A (en) * | 2005-08-23 | 2007-03-08 | Hitachi Ltd | Electrical contact |
| KR101078295B1 (en) * | 2009-12-15 | 2011-10-31 | 승림카본금속주식회사 | Method for manufacturing wc based electric contact and electric contact manufactured by the same |
| JP2012134014A (en) * | 2010-12-21 | 2012-07-12 | Toshiba Corp | Contact material for vacuum valve |
| JP2020509163A (en) * | 2016-12-13 | 2020-03-26 | イートン インテリジェント パワー リミテッドＥａｔｏｎ Ｉｎｔｅｌｌｉｇｅｎｔ Ｐｏｗｅｒ Ｌｉｍｉｔｅｄ | Improved electrical contact alloy for vacuum contactors |
| CN115354186A (en) * | 2022-07-04 | 2022-11-18 | 陕西斯瑞新材料股份有限公司 | Preparation method of extruded copper-chromium contact material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0144959B1 (en) | Powdered metal composite | |
| JP5614708B2 (en) | Manufacturing method of electrode material for vacuum circuit breaker and electrode material for vacuum circuit breaker | |
| EP2586882B1 (en) | Method for producing electrode material for vacuum circuit breaker, electrode material for vacuum circuit breaker and electrode for vacuum circuit breaker | |
| EP0101024A2 (en) | Contact material of vacuum interrupter and manufacturing process therefor | |
| JPH0896643A (en) | Electric contact point material | |
| JP2002313196A (en) | Electric contact member and manufacturing method for the same | |
| US5985440A (en) | Sintered silver-iron material for electrical contacts and process for producing it | |
| JP2002088437A (en) | Contact material for vacuum valve and its production method | |
| KR100332513B1 (en) | Contact material for vacuum valve and method for fabricating the same | |
| JPS6359217B2 (en) | ||
| EP0460680B1 (en) | Contact for a vacuum interrupter | |
| JP2003147407A (en) | Electric contact, its manufacturing method, and vacuum valve and vacuum circuit breaker using the same | |
| JP2007066753A (en) | Contact material for vacuum valve, and manufacturing method therefor | |
| JP2003155530A (en) | Electric contact material | |
| JP2003223834A (en) | Electrical contact member and manufacturing method therefor | |
| JP2003077375A (en) | Contact material for vacuum valve and vacuum valve | |
| JP2002208335A (en) | Vacuum bulb contact point and its manufacturing method | |
| JP3067317B2 (en) | Manufacturing method of electrode material | |
| JP2002167631A (en) | Electrical contact material, its production method and gas-blast circuit breaker | |
| JPH0813065A (en) | Sintered material for electrical contact and production thereof | |
| JP2555409B2 (en) | Contact for vacuum circuit breaker, manufacturing method thereof, and vacuum circuit breaker | |
| JP3443516B2 (en) | Manufacturing method of contact material for vacuum valve | |
| JP2004076141A (en) | Vacuum valve used for vacuum interrupter, and manufacturing method of electric contact | |
| RU2103103C1 (en) | Dispersion-hardened material based on copper for resistance welding electrodes | |
| KR0171607B1 (en) | Vacuum circuit breaker and contact |