JP2002075949A - Method of washing and drying wafer - Google Patents
Method of washing and drying waferInfo
- Publication number
- JP2002075949A JP2002075949A JP2000263667A JP2000263667A JP2002075949A JP 2002075949 A JP2002075949 A JP 2002075949A JP 2000263667 A JP2000263667 A JP 2000263667A JP 2000263667 A JP2000263667 A JP 2000263667A JP 2002075949 A JP2002075949 A JP 2002075949A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- water
- rotation
- center
- drying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置製造に係
り、特に半導体ウェハのウェット洗浄工程から乾燥工程
に至る枚葉スピン方式のウェハ洗浄乾燥方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor device manufacturing, and more particularly to a single wafer spin type wafer cleaning / drying method from a wet cleaning process to a drying process for a semiconductor wafer.
【０００２】[0002]
【従来の技術】超ＬＳＩの微細化に伴って、ウェハ表面
をクリーンにする洗浄技術はますます重要になってきて
いる。ウェハ洗浄の１つであるウェット洗浄の最終工程
には必ず乾燥工程がある。この洗浄後の乾燥技術も、超
クリーンなウェハ表面を得るために重要である。それま
での洗浄に細心の注意を払っても、最終の乾燥工程でパ
ーティクル汚染、ウォータマークと呼ばれるシミの発生
など、不良の原因が生じてしまうケースは少なくない。2. Description of the Related Art Along with miniaturization of VLSI, a cleaning technique for cleaning a wafer surface has become more and more important. The final step of wet cleaning, which is one of wafer cleaning, always includes a drying step. This post-cleaning drying technique is also important for obtaining an ultra-clean wafer surface. Even if great care is taken in the cleaning up to that time, there are many cases where causes of defects such as particle contamination and generation of spots called watermarks occur in the final drying step.
【０００３】図３（ａ），（ｂ）は、それぞれ従来のウ
ェハ洗浄乾燥方法の一例を工程順に示す概観図である。
図は、枚葉スピン方式であり、図示しない処理チャンバ
内部に半導体ウェハＷＦの支持台３１が配備されてい
る。支持台３１は、ウェハＷＦをチャックして回転可能
である。FIGS. 3A and 3B are schematic views showing an example of a conventional wafer cleaning / drying method in the order of steps.
The drawing shows a single wafer spin method, in which a support 31 for a semiconductor wafer WF is provided inside a processing chamber (not shown). The support table 31 can rotate by chucking the wafer WF.
【０００４】まず、図３（ａ）に示すように、支持台３
１により、ウェハＷＦが回転し、図示しないノズル等を
介して脱イオン水、すなわち純水ＤＩＷがウェハＷＦ表
面に供給される（水洗工程）。[0004] First, as shown in FIG.
Due to 1, the wafer WF is rotated, and deionized water, that is, pure water DIW, is supplied to the surface of the wafer WF through a nozzle or the like (not shown) (water washing step).
【０００５】次に、図３（ｂ）に示すように、純水の供
給を止め、支持台３１をある程度回転数を上げて高速に
回転させる。これにより、ウェハＷＦ表面に残った水は
遠心力により振り切られウェハＷＦを乾燥させる（乾燥
工程）。Next, as shown in FIG. 3 (b), the supply of pure water is stopped, and the support base 31 is rotated at a high speed to some extent. Thereby, the water remaining on the surface of the wafer WF is shaken off by the centrifugal force to dry the wafer WF (drying step).
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記枚
葉スピン方式においては、ウェハ中心と、回転中心がほ
ぼ一致している。このため、ウェハ中心に向かうほど、
かかる遠心力は小さい。そのため、ある程度回転速度を
上げて乾燥させるが、やはり、ウェハ中心付近は遠心力
が弱く、図３（ｂ）に示すように、小さな水滴３２が残
留する場合がある。水滴の残留領域はウォータマークと
なり、不良の原因を作る。ウォータマークは、酸素存在
下で乾燥するときにシリコンと水滴の界面で酸化反応が
起こり、反応生成物が水滴中に溶解し、乾燥後の残渣と
なるものである。この結果、ウェハ中心付近に品質不良
を誘発する。However, in the single wafer spin method, the center of the wafer and the center of rotation substantially coincide with each other. Therefore, the closer to the center of the wafer,
Such a centrifugal force is small. For this reason, although the drying is performed with the rotation speed increased to some extent, the centrifugal force is still weak near the center of the wafer, and small water droplets 32 may remain as shown in FIG. The remaining area of the water droplet becomes a watermark, and causes a defect. The watermark means that an oxidation reaction occurs at the interface between silicon and water droplets when drying in the presence of oxygen, and the reaction product dissolves in the water droplets to become a residue after drying. As a result, poor quality is induced near the center of the wafer.
【０００７】本発明は上記のような事情を考慮してなさ
れたもので、枚葉スピン方式において、ウェハ中心付近
も含めて水滴を残留させない、ウォータマークの発生を
抑制するウェハ洗浄乾燥方法を提供しようとするもので
ある。The present invention has been made in view of the above circumstances, and provides a method of cleaning and drying a wafer in a single-wafer spin method in which water droplets including the vicinity of the center of a wafer are not left and the generation of a watermark is suppressed. What you want to do.
【０００８】[0008]
【課題を解決するための手段】本発明のウェハ洗浄乾燥
方法は、枚葉スピン方式のウェハの洗浄乾燥処理に関
し、半導体ウェハが回転可能な支持台に固定され、回転
させたウェハ表面に純水を供給する水洗工程と、前記純
水の供給を続けながら前記支持台の回転を止める回転停
止工程と、前記純水の供給を止め、少なくともウェハ中
心付近の溜水をまとめて周縁に向かって動かす前記支持
台の低速回転工程と、前記ウェハ表面に残った水が遠心
力によって振り切られる前記支持台の高速回転工程とを
具備したことを特徴とする。A wafer cleaning and drying method according to the present invention relates to a single wafer spin type wafer cleaning and drying process, in which a semiconductor wafer is fixed to a rotatable support table, and pure water is applied to the rotated wafer surface. A washing step of supplying the pure water, a rotation stopping step of stopping the rotation of the support table while continuing the supply of the pure water, and stopping the supply of the pure water and moving at least the pooled water near the center of the wafer toward the periphery. A low-speed rotation step of the support base; and a high-speed rotation step of the support base in which water remaining on the wafer surface is shaken off by centrifugal force.
【０００９】本発明のウェハ洗浄乾燥方法によれば、回
転停止工程により一旦ウェハの回転を停止させ、大きな
溜水を形成する。その後、低速回転工程によりウェハ中
心の溜水をまとめて周縁の方に移動させる。これによ
り、高速回転工程によるウェハの乾燥段階では、遠心力
の小さいウェハ中心付近には小さな水滴さえも残ってい
ないようにする。According to the wafer cleaning / drying method of the present invention, the rotation of the wafer is temporarily stopped in the rotation stopping step to form a large reservoir. After that, the accumulated water at the center of the wafer is moved toward the periphery by a low-speed rotation process. Thus, in the drying step of the wafer by the high-speed rotation process, even a small water droplet does not remain near the center of the wafer having a small centrifugal force.
【００１０】[0010]
【発明の実施の形態】図１（ａ）〜（ｄ）は、それぞれ
本発明の一実施形態に係るウェハ洗浄乾燥方法を工程順
に示す概観図である。図は、枚葉スピン方式であり、図
示しない処理チャンバ内部に半導体ウェハＷＦの支持台
１１が配備されている。支持台１１は、ウェハＷＦをチ
ャックして回転制御される。ウェハＷＦのチャックは、
図示のようなウェハ裏面の真空吸着によるものでも、図
示しないがウェハ端面の所定箇所を押さえるタイプによ
るものでもよい。1A to 1D are schematic views showing a wafer cleaning / drying method according to an embodiment of the present invention in the order of steps. The drawing shows a single-wafer spin method, in which a support 11 for a semiconductor wafer WF is provided inside a processing chamber (not shown). The rotation of the support table 11 is controlled by chucking the wafer WF. The chuck of the wafer WF is
As shown in the figure, vacuum suction on the back surface of the wafer or a type of pressing a predetermined portion of the wafer end face (not shown) may be used.
【００１１】まず、図１（ａ）に示すように、支持台１
１により、ウェハＷＦが回転し、図示しないノズル等を
介して脱イオン水、すなわち純水ＤＩＷがウェハＷＦ表
面に供給される（水洗工程）。First, as shown in FIG.
Due to 1, the wafer WF is rotated, and deionized water, that is, pure water DIW, is supplied to the surface of the wafer WF through a nozzle or the like (not shown) (water washing step).
【００１２】次に、図１（ｂ）に示すように、純水ＤＩ
Ｗの供給を続けながら、支持台１１の回転を止める。ウ
ェハ面は疎水性の面で構成されており、純水供給による
溜水１２ができる。この支持台１１の回転の停止はだい
たい１〜２秒である（回転停止工程）。Next, as shown in FIG.
While the supply of W is continued, the rotation of the support base 11 is stopped. The wafer surface is formed of a hydrophobic surface, and a reservoir 12 is formed by supplying pure water. The stop of the rotation of the support base 11 is about 1 to 2 seconds (rotation stop step).
【００１３】次に、図１（ｃ）に示すように、純水の供
給を止め、支持台１１をゆっくりと回転させる。これに
より、ウェハ中心付近の溜水１２をまとめてウェハ周縁
の方向に動かす。このとき、ウェハ中心に小さな水滴が
あった場合、この溜水１２と共にウェハ周縁側に寄せら
れる（低速回転工程）。Next, as shown in FIG. 1C, the supply of pure water is stopped, and the support 11 is slowly rotated. As a result, the pool water 12 near the center of the wafer is moved collectively in the direction of the peripheral edge of the wafer. At this time, if there is a small water drop at the center of the wafer, it is brought to the wafer peripheral side together with the accumulated water 12 (low-speed rotation step).
【００１４】次に、図１（ｄ）に示すように、支持台１
１をある程度回転数を上げて高速に回転させる。これに
より、ウェハＷＦ表面に残った水は遠心力により振り切
られウェハＷＦを乾燥させる（高速回転工程）。Next, as shown in FIG.
1 is rotated at a high speed to a certain degree. Thereby, the water remaining on the surface of the wafer WF is shaken off by the centrifugal force to dry the wafer WF (high-speed rotation step).
【００１５】上記実施例方法によれば、回転停止工程に
よって一旦ウェハの回転を停止させ、大きな溜水を形成
する。その後、低速回転工程によりウェハ中心の溜水を
まとめて周縁の方に移動させる。これにより、高速回転
工程によるウェハの乾燥段階では、遠心力の小さいウェ
ハ中心付近には小さな水滴さえも残っていないようにす
る。これにより、ウェハ中心付近に従来のような小さな
水滴が残留することもなくなり、この結果、ウォータマ
ーク等、不良の原因を作らなくなる。According to the method of the above embodiment, the rotation of the wafer is temporarily stopped in the rotation stop step, and a large pool of water is formed. After that, the accumulated water at the center of the wafer is moved toward the periphery by a low-speed rotation process. Thus, in the drying step of the wafer by the high-speed rotation process, even a small water droplet does not remain near the center of the wafer having a small centrifugal force. This prevents small water droplets from remaining near the center of the wafer as in the related art, and as a result, causes no defects such as watermarks.
【００１６】図２は、図１の実施例方法を適用する際の
枚葉スピン方式の支持台１１における回転制御の具体例
を示す特性図である。まず、純水ＤＩＷによる水洗工程
は、毎分１０００〜２０００回転の高速回転から始まり
徐々に回転を落として行われる。この間は２秒程度であ
る。次に、１秒程度の回転停止工程が入る。ウェハの回
転停止によってウェハ上に純水ＤＩＷが供給され続け、
中心付近に大きな溜水１２が形成される。FIG. 2 is a characteristic diagram showing a specific example of the rotation control of the single-wafer spin type support base 11 when the embodiment method of FIG. 1 is applied. First, the washing step using pure water DIW is performed while starting at a high speed of 1000 to 2000 revolutions per minute and gradually decreasing the revolution. During this time, it is about 2 seconds. Next, a rotation stop process of about one second is entered. Pure water DIW continues to be supplied on the wafer by stopping the rotation of the wafer,
A large reservoir 12 is formed near the center.
【００１７】次に、毎分５０回転程度に至るまで２秒程
度費やし、低速回転によるウェハ中心の溜水の移動がな
される。この溜水の移動はウェハ中心付近の小さな水滴
もまとめて周縁の方に寄せられる。続いて２秒程度の間
に毎分１０００〜２０００回転の高速回転に至るウェハ
の乾燥処理に移行する。Next, it takes about 2 seconds to reach about 50 rotations per minute, and the water at the center of the wafer is moved by the low-speed rotation. This movement of the pooled water also brings together small water droplets near the center of the wafer toward the periphery. Subsequently, the process shifts to a wafer drying process in which high-speed rotation of 1000 to 2000 rotations per minute is performed within about 2 seconds.
【００１８】このように、支持台を回転制御することに
よって、ウェハ中心付近に小さな水滴を残留させずに、
ウェハの乾燥が達成できる。よってウォータマーク等、
不良の原因を作らなくなる。As described above, by controlling the rotation of the support table, small water droplets do not remain near the center of the wafer.
Drying of the wafer can be achieved. Therefore, such as watermarks,
Eliminate the cause of failure.
【００１９】なお、上記実施例方法で示した支持台の回
転制御に関するそれぞれの時間配分は一例であり、特に
限定されない。特に回転停止工程、低速回転工程は、ス
ループットを大きく低下させないように時間を配慮すべ
きである。It should be noted that the respective time distributions related to the rotation control of the support base shown in the above-described embodiment method are merely examples, and are not particularly limited. In particular, in the rotation stop step and the low-speed rotation step, time should be considered so as not to significantly reduce the throughput.
【００２０】[0020]
【発明の効果】以上説明したように本発明のウェハ洗浄
乾燥方法によれば、回転停止工程により一旦ウェハの回
転を停止させ、大きな溜水を形成する。その後、低速回
転工程によりウェハ中心の溜水をまとめて周縁の方に移
動させる。これにより、高速回転工程によるウェハの乾
燥段階では、遠心力の小さいウェハ中心付近には小さな
水滴を残さないようにする。この結果、ウェハの回転制
御というコストを抑えた技術により、枚葉スピン方式に
おいて、ウェハ中心付近も含めて水滴を残留させない、
ウォータマークの発生を抑制するウェハ洗浄乾燥方法を
提供することができる。As described above, according to the wafer cleaning / drying method of the present invention, the rotation of the wafer is temporarily stopped in the rotation stopping step to form a large reservoir. After that, the accumulated water at the center of the wafer is moved toward the periphery by a low-speed rotation process. This prevents small water droplets from leaving near the center of the wafer having a small centrifugal force at the stage of drying the wafer by the high-speed rotation process. As a result, in the single wafer spin method, water droplets including the vicinity of the center of the wafer are not left,
It is possible to provide a wafer cleaning / drying method for suppressing generation of a watermark.
【図１】（ａ）〜（ｄ）は、それぞれ本発明の一実施形
態に係るウェハ洗浄乾燥方法を工程順に示す概観図であ
る。FIGS. 1A to 1D are schematic views showing a wafer cleaning / drying method according to an embodiment of the present invention in the order of steps.
【図２】図１の実施例方法を適用する際の枚葉スピン方
式の支持台における回転制御の具体例を示す特性図であ
る。FIG. 2 is a characteristic diagram showing a specific example of rotation control in a single wafer spin type support base when applying the embodiment method of FIG. 1;
【図３】（ａ），（ｂ）は、それぞれ従来のウェハ洗浄
乾燥方法の一例を工程順に示す概観図である。FIGS. 3A and 3B are schematic views showing an example of a conventional wafer cleaning and drying method in the order of steps.
１１，３１…支持台 １２…溜水 ３２…水滴 ＷＦ…ウェハ ＤＩＷ…純水（脱イオン水） 11, 31: support base 12: stored water 32: water drops WF: wafer DIW: pure water (deionized water)
Claims (2)
に関し、 半導体ウェハが回転可能な支持台に固定され、回転させ
たウェハ表面に純水を供給する水洗工程と、 前記純水の供給を続けながら前記支持台の回転を止める
回転停止工程と、 前記純水の供給を止め、少なくともウェハ中心付近の溜
水をまとめて周縁に向かって動かす前記支持台の低速回
転工程と、 前記ウェハ表面に残った水が遠心力によって振り切られ
る前記支持台の高速回転工程と、を具備したことを特徴
とするウェハ洗浄乾燥方法。1. A cleaning and drying process for a single-wafer spin type wafer, wherein a semiconductor wafer is fixed to a rotatable support, and a washing step of supplying pure water to a rotated wafer surface; A rotation stopping step of stopping the rotation of the support table while continuing, a low-speed rotation step of the support table that stops the supply of the pure water and moves at least a pool of water near the center of the wafer toward the periphery, A high-speed rotation step of the support table in which remaining water is shaken off by centrifugal force.
達成されることを特徴とする請求項１記載のウェハ洗浄
乾燥方法。2. The wafer cleaning and drying method according to claim 1, wherein the low-speed rotation step is performed at 50 rotations per minute or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263667A JP2002075949A (en) | 2000-08-31 | 2000-08-31 | Method of washing and drying wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000263667A JP2002075949A (en) | 2000-08-31 | 2000-08-31 | Method of washing and drying wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002075949A true JP2002075949A (en) | 2002-03-15 |
Family
ID=18751179
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000263667A Withdrawn JP2002075949A (en) | 2000-08-31 | 2000-08-31 | Method of washing and drying wafer |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005050724A1 (en) * | 2003-11-18 | 2005-06-02 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus and computer-readable recording medium |
-
2000
- 2000-08-31 JP JP2000263667A patent/JP2002075949A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005050724A1 (en) * | 2003-11-18 | 2005-06-02 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus and computer-readable recording medium |
| US7927429B2 (en) | 2003-11-18 | 2011-04-19 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium |
| US8113221B2 (en) | 2003-11-18 | 2012-02-14 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium |
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| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20071106 |