JP2002057175A - Method of manufacturing electronic components and liquid resin used therein - Google Patents
Method of manufacturing electronic components and liquid resin used thereinInfo
- Publication number
- JP2002057175A JP2002057175A JP2000241540A JP2000241540A JP2002057175A JP 2002057175 A JP2002057175 A JP 2002057175A JP 2000241540 A JP2000241540 A JP 2000241540A JP 2000241540 A JP2000241540 A JP 2000241540A JP 2002057175 A JP2002057175 A JP 2002057175A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- electronic component
- curing
- temperature
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品の製造方
法及び当該方法で用いる液状樹脂に係り、特にＩＣ（In
tegrated Circuit）、ＬＳＩ（Large Scale Integratio
n）、ダイオード、トランジスタ、ＬＥＤ（Light Emitt
ing Diode）やＬＤ（Laser Diode）等の発光素子、コイ
ル、及び抵抗等の電子部品の製造方法及び当該方法で用
いる液状樹脂に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component and a liquid resin used in the method, and more particularly to a method of manufacturing an electronic component (IC).
integrated circuit), LSI (Large Scale Integratio)
n), diode, transistor, LED (Light Emitt
The present invention relates to a method for manufacturing a light emitting element such as a laser diode (LD) or an LD (Laser Diode), an electronic component such as a coil and a resistor, and a liquid resin used in the method.
【０００２】[0002]
【従来の技術】近年、各種電子機器の小型化が著しく進
歩している。特に、携帯性が重要視される携帯電話機、
携帯端末機、及びＩＣカード等の電子機器は年々小型化
及び軽量化が図られており、他の商品より小型であり、
しかも軽いという観点から商品の差別化を図る場合も多
々ある。例えば半導体素子のパッケージングを例に挙げ
ると、半導体素子は半導体チップの周囲を樹脂で封止し
たものであるが、その封止形態には、ボール・グリッド
・アレイ（ＢＧＡ）、チップサイズ・パッケージ（ＣＳ
Ｐ）、チップオンボード（ＣＯＢ）、ＴＡＢ、ＱＦＰ、
ＰＬＣＣ、及びフリップチップ等の種々の形態がある。2. Description of the Related Art In recent years, miniaturization of various electronic devices has been remarkably advanced. In particular, mobile phones where portability is important,
Electronic devices such as mobile terminals and IC cards are becoming smaller and lighter year by year, and are smaller than other products.
In addition, there are many cases in which products are differentiated from the viewpoint of lightness. For example, taking the packaging of a semiconductor element as an example, the semiconductor element is a semiconductor chip in which the periphery of a semiconductor chip is sealed with a resin. The sealing form includes a ball grid array (BGA) and a chip size package. (CS
P), chip on board (COB), TAB, QFP,
There are various forms such as PLCC and flip chip.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上述のよう
に半導体素子等の電子部品は、小型化を図る観点からパ
ッケージングの進歩が図られてきたが、近年主として偽
造を防止すると観点から例えばクレジットカード番号、
氏名、年齢、住所等の種々の個人情報をＩＣカードで記
録することが検討されており、一部では実現されてい
る。かかる状況下においては、ＩＣカード内に実装され
る電子部品はより薄いものが求められる。また、ＩＣカ
ードに限らず携帯性が重要視される電子機器一般につい
ても小型軽量化を図る観点から厚みが制限されることが
多い。By the way, as described above, packaging of electronic components such as semiconductor elements has been advanced from the viewpoint of miniaturization. card number,
Recording various personal information such as name, age, address, etc. on an IC card has been studied, and some of them have been realized. Under such circumstances, electronic components mounted in the IC card are required to be thinner. In addition to the IC card, the thickness of electronic devices in which portability is important is often limited from the viewpoint of reducing the size and weight.
【０００４】パッケージの形状を任意の形状にできれば
薄型化を図ることができると考えられる。従来、硬化剤
と樹脂とを用いてゲル状にして樹脂の形状を整形する技
術が案出されている。この技術は硬化剤と樹脂とを用
い、これらを加熱することによりそれぞれの一部を反応
させて樹脂をＢ−ステージ化（半ゲル化状態）させてお
き、この状態で作業（型に挿入したり、積み上げたり）
を行う。作業を終えた後に温度を室温に下げて樹脂の表
面が強い粘着性を有しない所謂タックフリーの固体にす
るものである。このようにして形成された固体は、再度
加熱すると溶融して液体となって流動し、樹脂表面は接
着性を有する。[0004] It is considered that if the shape of the package can be arbitrarily made, the thickness can be reduced. 2. Description of the Related Art Conventionally, there has been proposed a technique of shaping a resin into a gel using a curing agent and a resin. In this technique, a curing agent and a resin are used, and by heating them, a part of each of them is reacted to bring the resin into a B-stage (semi-gelled state). Or pile up)
I do. After the work is completed, the temperature is lowered to room temperature to form a so-called tack-free solid in which the surface of the resin does not have strong tackiness. When the solid thus formed is heated again, it melts and turns into a liquid and flows, and the resin surface has adhesiveness.
【０００５】また、硬化剤及び樹脂をＢ−ステージ化さ
せるためには温度及び時間を厳しく管理する必要があ
る。つまり、温度が低いか又は時間が短い場合は、Ｂ−
ステージ化せず液状のままであり、温度が高いか又は時
間が長い場合は、硬化が進行し過ぎて二度と液状になら
ないからである。よって、かかる技術は最適な条件の下
で硬化剤と樹脂との反応を途中で停止させることによっ
てＢ−ステージ状態を形成させることが必須の技術であ
るため、電子部品を形成するために必要な設備が高価と
なり、また製造が難しく歩留まりが悪いという問題があ
った。[0005] In order to make the curing agent and the resin B-stage, it is necessary to strictly control the temperature and time. That is, when the temperature is low or the time is short, B-
This is because if the liquid is not staged and remains in a liquid state and the temperature is high or the time is long, the curing proceeds so much that the liquid does not become liquid again. Therefore, such a technique is an essential technique for forming the B-stage state by stopping the reaction between the curing agent and the resin on the way under the optimum conditions, and is necessary for forming the electronic component. There are problems that the equipment is expensive, that the production is difficult, and that the yield is low.
【０００６】本発明は、上記事情に鑑みてなされたもの
であり、厚さの制限される電子部品を安価に且つ単位時
間に大量に製造することができる電子部品の製造方法及
び当該方法で用いる液状樹脂を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a method of manufacturing an electronic component capable of manufacturing a large number of electronic components with a limited thickness at a low cost per unit time, and using the method. It is intended to provide a liquid resin.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明の電子部品の製造方法は、電子部品素子が搭
載された基板に樹脂を塗布する塗布工程と、前記樹脂を
外部からの加圧により変形可能な程度に硬化させる第１
硬化工程と、前記樹脂の表面を平坦化する平坦化工程
と、前記平坦化した樹脂を硬化させる第２硬化工程とを
有することを特徴としている。また、本発明の電子部品
の製造方法は、前記塗布工程が、前記樹脂を印刷により
塗布する工程であることを特徴としている。また、本発
明の電子部品の製造方法は、前記樹脂が真空下で印刷さ
れることを特徴としている。また、本発明の電子部品の
製造方法は、前記第１硬化工程及び前記第２工程が、前
記樹脂に熱を加えて硬化させる工程であることを特徴と
している。また、本発明の電子部品の製造方法は、前記
第１硬化工程で設定される温度は、前記第２工程で設定
される温度よりも低いことを特徴としている。また、本
発明の電子部品の製造方法は、前記樹脂が、前記第１工
程で設定される温度で硬化する第１硬化剤と、前記第１
工程で設定される温度では硬化せず、前記第２工程で設
定される温度で硬化する第２硬化剤とを含むことを特徴
としている。また、本発明の電子部品の製造方法は、前
記樹脂の粘度が、常温で１０から１０００Ｐａ・ｓであ
ることを特徴としている。また、本発明の電子部品の製
造方法は、前記平坦化工程が、前記基板に塗布した樹脂
に対して金属平板を押しつける工程であり、前記第２硬
化過程は、前記樹脂に対して押しつけた金属平板ととも
に前記樹脂を硬化させる工程であることを特徴としてい
る。また、本発明の液状樹脂は、電子部品素子を封止す
る際に用いられる液状樹脂であって、第１温度で硬化す
る第１硬化剤と、前記第１温度では硬化せず、前記第１
温度よりも高い第２温度で硬化する第２硬化剤とを含む
ことを特徴としている。また、本発明の液状樹脂は、前
記樹脂の粘度が、常温で１０から１０００Ｐａ・ｓであ
ることを特徴としている。In order to solve the above-mentioned problems, a method of manufacturing an electronic component according to the present invention comprises a coating step of coating a resin on a substrate on which an electronic component element is mounted, and a step of applying the resin from outside. First to cure to the extent that it can be deformed by pressure
The method includes a curing step, a flattening step of flattening the surface of the resin, and a second curing step of curing the flattened resin. In the method for manufacturing an electronic component according to the present invention, the applying step is a step of applying the resin by printing. Further, the method for manufacturing an electronic component according to the present invention is characterized in that the resin is printed under vacuum. In the method for manufacturing an electronic component according to the present invention, the first curing step and the second step are steps of curing the resin by applying heat. In the method for manufacturing an electronic component according to the present invention, the temperature set in the first curing step is lower than the temperature set in the second step. Further, in the method for manufacturing an electronic component according to the present invention, the first resin may be cured at a temperature set in the first step;
A second curing agent that does not cure at the temperature set in the step but cures at the temperature set in the second step. Further, the method of manufacturing an electronic component according to the present invention is characterized in that the viscosity of the resin is 10 to 1000 Pa · s at normal temperature. In the method for manufacturing an electronic component according to the present invention, the flattening step is a step of pressing a metal flat plate against the resin applied to the substrate, and the second curing step is a step of pressing the metal pressed against the resin. This is a step of curing the resin together with the flat plate. In addition, the liquid resin of the present invention is a liquid resin used when sealing an electronic component element, and includes a first curing agent that cures at a first temperature and a first curing agent that does not cure at the first temperature.
A second curing agent that cures at a second temperature higher than the temperature. Further, the liquid resin of the present invention is characterized in that the viscosity of the resin is 10 to 1000 Pa · s at normal temperature.
【０００８】[0008]
【発明の実施の形態】以下、図面を参照して本発明の一
実施形態による電子部品の製造方法及び当該方法で用い
る液状樹脂について詳細に説明する。図１は、本発明の
一実施形態による電子部品の製造方法の工程順を示すフ
ローチャートであり、図２〜図７は、本発明の第１実施
形態による電子部品の製造方法を用いて電子部品を製造
する様子を説明するための断面である。尚、以下の説明
においては図１に示した工程手順について適宜図２〜図
７を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing an electronic component according to an embodiment of the present invention and a liquid resin used in the method will be described in detail with reference to the drawings. FIG. 1 is a flowchart showing a process sequence of an electronic component manufacturing method according to an embodiment of the present invention. FIGS. 2 to 7 are electronic component manufacturing methods using the electronic component manufacturing method according to the first embodiment of the present invention. 6 is a cross-sectional view for explaining a state of manufacturing the device. In the following description, the process procedure shown in FIG. 1 will be described with reference to FIGS.
【０００９】まず、本実施形態においては、図２に示す
ように、基板１０上に電子部品素子１２を搭載する工程
が行われる（工程Ｓ１０）。図２は、電子部品素子１２
が基板１０上に搭載された様子を示す断面図である。こ
こで、基板１０を形成する材質は特に制限が無く、有機
基板、無機基板、半導体基板、又は金属リードフレーム
の何れであっても良い。有機基板を形成する材質は、例
えばガラスエポキシ、ＢＴ、ポリイミド等である。ま
た、無機基板を形成する材質は、ガラスやセラミック等
であり、半導体基板を形成する材質はシリコンや化合物
半導体である。First, in this embodiment, as shown in FIG. 2, a step of mounting the electronic component element 12 on the substrate 10 is performed (step S10). FIG. 2 shows the electronic component element 12.
FIG. 3 is a cross-sectional view showing a state where is mounted on a substrate 10. Here, the material for forming the substrate 10 is not particularly limited, and may be any of an organic substrate, an inorganic substrate, a semiconductor substrate, and a metal lead frame. The material forming the organic substrate is, for example, glass epoxy, BT, polyimide or the like. The material forming the inorganic substrate is glass, ceramic, or the like, and the material forming the semiconductor substrate is silicon or a compound semiconductor.
【００１０】上記電子部品素子１２は、半導体（ＩＣ、
ＬＳＩ等）、トランジスタ、ダイオード、ＬＥＤやＬＤ
等の発光素子、コイル、コンデンサ、抵抗等であり、こ
れら単体のみならず、これらを複合してモジュール化さ
れたものを含む。尚、モジュール化された複合体の中に
は、既に単品として樹脂封止されたものが含まれても良
いが、ここでいう電子部品素子１２は集合体を単体とし
て樹脂封止を必要とするものを対象としている。尚、一
枚の基板１０上に搭載される電子部品素子１２の数は、
単一でも複数でも良い。複数の場合は、後述するように
個々に分割される。尚、図２においては、電子部品素子
１２と基板１０とがワイヤ線１４によって電気的に接続
される場合を例に挙げて図示しているが、電子部品素子
１２と基板１０との電気的な接続はこれに限るものでは
なく、例えばバンプを形成することによって実現しても
良い。The electronic component element 12 includes a semiconductor (IC,
LSI, etc.), transistors, diodes, LEDs and LDs
And the like, a coil, a capacitor, a resistor, and the like, and includes not only a single element but also a module obtained by combining these elements. Note that the modularized composite may include a resin-sealed product as a single product, but the electronic component element 12 referred to here requires resin-sealing as a single assembly. It is intended for things. The number of electronic component elements 12 mounted on one substrate 10 is as follows.
It may be single or plural. In the case where there are a plurality, the plurality is divided individually as described later. Although FIG. 2 shows an example in which the electronic component element 12 and the substrate 10 are electrically connected to each other by the wire 14, the electrical connection between the electronic component element 12 and the substrate 10 is illustrated. The connection is not limited to this, and may be realized by, for example, forming bumps.
【００１１】次に、基板１０上に搭載した電子部品素子
１２を液状の樹脂を用いて封止する工程が行われる（工
程Ｓ１２）。図３は、印刷によって電子部品素子１２を
封止する様子を示す断面図である。印刷により電子部品
素子１２を封止する際には、形成する電子部品の厚み
（基板１０の厚みを含まない）程度の厚みを有し、所定
の大きさの孔１６が形成された孔版１８と、孔版１８の
上面に沿って面内方向に摺動するスキージ２０とを用い
て印刷が行われる。尚、孔版１８に形成される孔１６
は、基板１０上に搭載された電子部品素子１２各々に対
応させて形成されていても良く、図３に示すように複数
個の電子部品素子１２に１つ形成されていても良い。Next, a step of sealing the electronic component element 12 mounted on the substrate 10 with a liquid resin is performed (step S12). FIG. 3 is a cross-sectional view showing how the electronic component element 12 is sealed by printing. When sealing the electronic component element 12 by printing, a stencil 18 having a thickness of about the thickness of the electronic component to be formed (not including the thickness of the substrate 10) and having a hole 16 of a predetermined size is formed. Printing is performed using a squeegee 20 that slides in the in-plane direction along the upper surface of the stencil 18. The holes 16 formed in the stencil 18
May be formed corresponding to each of the electronic component elements 12 mounted on the substrate 10, or one may be formed on a plurality of electronic component elements 12 as shown in FIG.
【００１２】ここで、樹脂２２は、比較的低い温度（第
１硬化条件）でエポキシ樹脂と反応して硬化する第１硬
化剤成分と、第１硬化条件では反応を起こさずに硬化せ
ず、比較的高い温度（第２硬化条件）でエポキシ樹脂と
反応して硬化する第２硬化剤成分とを含み、これら第１
硬化剤成分と第２硬化剤成分とをある割合でエポキシ樹
脂に配合した液状のエポキシ樹脂封止剤である。第１硬
化剤と第２硬化剤との間には、互いに硬化剤同士が反応
せず、相手の反応性を阻害せず、両者ともに常温（印刷
時における温度）での安全性があり、両者のエポキシ樹
脂との反応温度にある程度大きな差があるものが好適で
ある。尚、両者共に規制化学物質ではないことが望まれ
る。また、上記条件を満たす限りにおいて、それぞれに
ついて有効な硬化促進剤を用いても良い。Here, the resin 22 reacts with the epoxy resin at a relatively low temperature (first curing condition) and cures with the first curing agent component, and does not react and cure under the first curing condition. A second curing agent component that reacts with the epoxy resin and cures at a relatively high temperature (second curing condition);
It is a liquid epoxy resin sealant in which a curing agent component and a second curing agent component are mixed in an epoxy resin in a certain ratio. Between the first curing agent and the second curing agent, the curing agents do not react with each other, do not hinder the reactivity of each other, and both have safety at room temperature (temperature during printing). It is preferable that there is a certain large difference in the reaction temperature of the epoxy resin with the epoxy resin. It is desired that both are not regulated chemical substances. Further, as long as the above conditions are satisfied, an effective curing accelerator may be used for each.
【００１３】印刷を行う際には、まず基板１０の上面に
孔版１８を接触させて配置する。このとき、孔版１８に
形成された孔１６が基板１０上に搭載された電子部品素
子１２及びワイヤ線１４の上方に位置するよう孔版１８
を配置する。つまり、孔版１８が電子部品素子１２及び
ワイヤ線１４を覆わないよう孔版１８を配置する。次
に、孔版１８上に樹脂２２を滴下し、スキージ２０を孔
版１８の面に沿って（図３の例では符号Ｄ１が付された
方向へ）摺動させる。スキージを摺動させることによ
り、樹脂２２が孔版１８に形成された孔１６内に流入し
て押し込み充填されるとともに、孔１６内に流入した樹
脂２２の上面が孔版１８と同一の高さになり、且つ上面
が平坦となる。When printing, first, the stencil 18 is placed in contact with the upper surface of the substrate 10. At this time, the stencil 18 is positioned such that the hole 16 formed in the stencil 18 is located above the electronic component element 12 and the wire 14 mounted on the substrate 10.
Place. That is, the stencil 18 is arranged so that the stencil 18 does not cover the electronic component element 12 and the wire 14. Next, the resin 22 is dropped on the stencil 18, and the squeegee 20 is slid along the surface of the stencil 18 (in the example shown in FIG. 3 in the direction indicated by the symbol D1). By sliding the squeegee, the resin 22 flows into the hole 16 formed in the stencil 18 and is pushed and filled, and the upper surface of the resin 22 flowing into the hole 16 becomes the same height as the stencil 18. , And the upper surface becomes flat.
【００１４】尚、工程Ｓ１２においてなされる印刷は、
１回の印刷のみに制限される訳ではなく、１枚の基板１
０に対して複数回行っても良い。また、樹脂２２の印刷
は大気圧下で行うこともできるが、大気圧下で印刷を行
う場合には、印刷時に樹脂２２内に混入した気泡を除去
する工程を印刷後工程として設ける必要がある。樹脂２
２の印刷は封止した樹脂２２中から気泡を除去する工程
を省略できるため真空雰囲気下で行ったほうが好まし
い。The printing performed in step S12 is as follows.
It is not limited to only one printing, but one substrate 1
It may be performed a plurality of times for 0. Further, the printing of the resin 22 can be performed under the atmospheric pressure. However, when the printing is performed under the atmospheric pressure, it is necessary to provide a process of removing air bubbles mixed in the resin 22 at the time of printing as a post-printing process. . Resin 2
The printing of No. 2 is preferably performed in a vacuum atmosphere because the step of removing bubbles from the sealed resin 22 can be omitted.
【００１５】次に、印刷を行った樹脂を第１硬化条件下
で外部からの加圧により変形可能な程度に硬化させる工
程が行われる（工程Ｓ１４）。工程Ｓ１２で印刷した樹
脂２２は液状であるため流動性があり、図３に示したよ
うに孔版１８が基板１０の上面に接触した状態から孔版
１８と基板１０とを離間させると樹脂２２が有する流動
性のため、印刷した樹脂２２の上面がなだらかな形状に
変形し、平坦ではなくなる。かかる状態で印刷した樹脂
２２を完全に硬化させてしまうと樹脂２２の表面が平坦
ではない電子部品が形成されてしまう。Next, a step of curing the printed resin to an extent capable of being deformed by external pressure under the first curing condition is performed (step S14). Since the resin 22 printed in step S12 is in a liquid state, it has fluidity. As shown in FIG. 3, when the stencil 18 is separated from the substrate 10 while the stencil 18 is in contact with the upper surface of the substrate 10, the resin 22 has Due to the fluidity, the upper surface of the printed resin 22 is deformed into a gentle shape and is not flat. If the printed resin 22 is completely cured in such a state, an electronic component whose surface is not flat is formed.
【００１６】そこで、本実施形態では、まず、本工程
（工程Ｓ１４）において、樹脂２２の硬化条件を第１硬
化条件に設定し、外部からの加圧により変形可能な程度
に硬化させている。図４は、第１硬化工程終了後の樹脂
２２の形状を示す断面図である。図４に示すように、硬
化後の樹脂２２はその上面が平坦ではなく、なだらかな
形状を有している。ここで、第１硬化条件とは、樹脂２
２を外部からの加圧により変形可能な程度に硬化させる
ための条件であり、樹脂２２の材質等によって定められ
る。第１硬化条件は、例えば硬化温度が８０度であり、
硬化時間が３０〜１２０分である。尚、樹脂２２と第１
硬化条件との関係についての詳細は後述する。尚、工程
Ｓ１４を終えた樹脂２２は流動性が殆ど無くなる。Therefore, in the present embodiment, first, in this step (step S14), the curing condition of the resin 22 is set to the first curing condition, and the resin 22 is cured to an extent capable of being deformed by external pressure. FIG. 4 is a cross-sectional view illustrating the shape of the resin 22 after the first curing step. As shown in FIG. 4, the upper surface of the cured resin 22 is not flat but has a gentle shape. Here, the first curing condition is defined as resin 2
2 is a condition for curing the resin 2 to such an extent that it can be deformed by external pressure, and is determined by the material of the resin 22 and the like. The first curing condition is, for example, a curing temperature of 80 degrees,
The curing time is 30 to 120 minutes. In addition, the resin 22 and the first
Details regarding the relationship with the curing conditions will be described later. It should be noted that the resin 22 after the step S14 has almost no fluidity.
【００１７】工程Ｓ１４が終了し、室温に冷却したとき
でも樹脂２２が外部からの加圧により変形可能な程度に
硬化すると、次に硬化させた樹脂を平坦化させる工程が
行われる（工程Ｓ１６）。図５は、樹脂２２の表面を平
坦化させる様子を示す断面図である。この工程では、図
５に示したように、基本的に平坦な面を有する平板２４
で樹脂２２の表面を抑えることが行われる。ここで、平
板２４の材質は、ガラス、セラミック、金属、プラスチ
ック等であり、特に制限は無いが、平滑なものが好まし
い。平板２４は樹脂２２の表面を抑えた後に除去される
が、この段階における樹脂２２は、粘着性が強くないた
め平板２４に離型剤を塗布しておく必要は特にない。After the step S14 is completed and the resin 22 is cured to an extent capable of being deformed by external pressure even when cooled to room temperature, a step of flattening the cured resin is performed (step S16). . FIG. 5 is a cross-sectional view showing how the surface of the resin 22 is flattened. In this step, as shown in FIG. 5, a flat plate 24 having a basically flat surface is formed.
To suppress the surface of the resin 22. Here, the material of the flat plate 24 is glass, ceramic, metal, plastic, or the like, and is not particularly limited, but is preferably a smooth material. The flat plate 24 is removed after the surface of the resin 22 is suppressed. However, since the resin 22 at this stage does not have strong adhesiveness, it is not particularly necessary to apply a release agent to the flat plate 24.
【００１８】尚、放熱性が重視される電子部品を製造す
る際には、平板２４として熱伝導率の高い材質のものを
用い、この平板２４で樹脂２２の表面を抑えるととも
に、平板２４を樹脂２２表面から除去せずに電子部品に
一体化させて放熱板として作用させてもよい。ここで、
平板２４を用いて樹脂２２を抑えることにより、電子部
品素子１２に応力が加わるが、樹脂２２が周囲に拡がる
ために、内部の電子部品素子１２に対する応力はさほど
大きくない。また、樹脂２２の高さ位置はおおよそ孔版
１８によって制御されているため、樹脂２２が大きく変
形することもない。図６は、工程Ｓ１６を終えた後の樹
脂２２の形状を示す断面図である。図６から分かるよう
に、樹脂２２の表面が平坦化されている。尚、前述した
工程Ｓ１４で樹脂２２を硬化させて殆ど流動しないの
で、平坦化された樹脂２２の表面はその平坦性が維持さ
れる。When manufacturing an electronic component in which heat dissipation is important, the flat plate 24 is made of a material having a high thermal conductivity, and the flat plate 24 suppresses the surface of the resin 22 and the flat plate 24 is made of resin. 22 may be integrated with the electronic component without being removed from the surface to function as a heat sink. here,
By suppressing the resin 22 by using the flat plate 24, stress is applied to the electronic component element 12, but since the resin 22 spreads around, the stress on the internal electronic component element 12 is not so large. Further, since the height position of the resin 22 is controlled by the stencil 18, the resin 22 is not greatly deformed. FIG. 6 is a cross-sectional view illustrating the shape of the resin 22 after the step S16 is completed. As can be seen from FIG. 6, the surface of the resin 22 is flattened. In addition, since the resin 22 is hardened in the step S14 and hardly flows, the flatness of the surface of the resin 22 is maintained.
【００１９】次に、表面を平坦化した樹脂２２を第２硬
化条件下で硬化させる工程が行われる（工程Ｓ１８）。
かかる工程は樹脂２２を完全に硬化させることにより、
樹脂２２の硬度を高めるために設けられる。ここで、第
２硬化条件とは、樹脂２２を完全に硬化させるための条
件であり、樹脂２２の材質等によって定められる。第２
硬化条件は、例えば硬化温度が１２０度であり、硬化時
間が１時間である。尚、工程Ｓ１４において、樹脂２２
を第１硬化条件で硬化させているために、第２硬化条件
での硬化中は樹脂の流動は起こらないので、樹脂２２は
工程Ｓ１６において平板２４で抑えられて形成された形
状が保持されて硬化する。尚、工程Ｓ１６において、樹
脂２２の表面を平坦化させるのに用いた平板２４を除去
しない場合には本工程において第２硬化条件で硬化する
第２硬化剤成分によって樹脂２２と接着される。Next, a step of curing the resin 22 having the flattened surface under the second curing condition is performed (step S18).
In this step, the resin 22 is completely cured,
It is provided to increase the hardness of the resin 22. Here, the second curing condition is a condition for completely curing the resin 22, and is determined by the material of the resin 22 and the like. Second
The curing conditions are, for example, a curing temperature of 120 degrees and a curing time of one hour. In step S14, the resin 22
Is cured under the first curing condition, so that the resin does not flow during the curing under the second curing condition, so that the resin 22 is suppressed in the step S16 by the flat plate 24, and the formed shape is maintained. To cure. If the flat plate 24 used to flatten the surface of the resin 22 is not removed in step S16, the resin 22 is bonded to the resin 22 by a second curing agent component that cures under the second curing condition in this step.
【００２０】図７は、工程Ｓ１０〜工程Ｓ１８を終えて
形成された電子部品の外観を示す図である。図７に示し
たように、基板１０上に偏平形状の樹脂２２が形成され
ているのが分かる。かかる形状の基板１０及び樹脂２２
が形成されると、次に切断基板１０及び樹脂２２を切断
して個々の電子部品を形成する工程が行われる（工程Ｓ
２０）。この工程では、例えば図７に示した基板１０及
び樹脂２２を図示しないダイサー等の切断機を用いて図
中破線で示した線に沿って切断すると、図７中に示す個
々の電子部品２６が形成される。こで電子部品２６は底
面が基板１０であるため、平面であり、切断機によって
切断された計４面も平面であり、更に上面は工程Ｓ１６
で平坦化されているため、６面全てが平坦な立方体形状
となる。FIG. 7 is a view showing the appearance of the electronic component formed after completing steps S10 to S18. As shown in FIG. 7, it can be seen that the flat resin 22 is formed on the substrate 10. Substrate 10 and resin 22 of such shape
Is formed, next, a step of cutting the cutting substrate 10 and the resin 22 to form individual electronic components is performed (Step S).
20). In this step, for example, when the substrate 10 and the resin 22 shown in FIG. 7 are cut along a line shown by a broken line in the figure using a cutting machine such as a dicer (not shown), the individual electronic components 26 shown in FIG. It is formed. Here, since the bottom surface of the electronic component 26 is the substrate 10, the electronic component 26 is flat, and the four surfaces cut by the cutting machine are also flat.
Therefore, all six surfaces have a flat cubic shape.
【００２１】以上、本発明の一実施形態による電子部品
の製造方法について説明したが、次に、本発明の一実施
形態で用いた樹脂２２並びに前述した第１硬化条件及び
第２硬化条件について具体例を挙げて詳細に説明する。
前述したように、本発明の一実施形態で用いた樹脂２２
は、第１硬化剤成分と第２硬化剤成分とを含むが、これ
らの組み合わせの例を例を挙げれば、アミン種同士の組
み合わせ、アミン種とフェノール樹脂との組み合わせに
促進剤として三級アミン又はイミダゾール類を添加した
もの、イミダゾール類とアミン種との組み合わせ、イミ
ダゾール類同士の組み合わせ、又はイミダゾール類とフ
ェノール樹脂となどの組み合わせである。The method of manufacturing an electronic component according to one embodiment of the present invention has been described above. Next, the resin 22 used in one embodiment of the present invention and the above-described first and second curing conditions will be described in detail. This will be described in detail with an example.
As described above, the resin 22 used in one embodiment of the present invention
Contains a first curing agent component and a second curing agent component. Examples of these combinations include a combination of amine species, a combination of amine species and a phenol resin, and a tertiary amine as an accelerator. Or a mixture of imidazoles, a combination of an imidazole and an amine, a combination of imidazoles, or a combination of an imidazole and a phenol resin.
【００２２】より具体的な例を挙げると、第１硬化条件
として硬化温度を８０度に設定し、硬化時間を３０〜１
２０分とした場合には、この条件下でエポキシ樹脂と反
応して硬化する第１硬化剤成分として、 アミキュアＭＹ−２４，ＰＮ−３１，ＰＮ−４０等（商
品名、味の素） ハードナーII−４０７０．４３３８，４３３９等（商品
名、アデカ） キュアダクトＰ−０５０５，Ｐ−１０９０等（四国化成
工業） が挙げられる。More specifically, as a first curing condition, a curing temperature is set to 80 degrees and a curing time is 30 to 1
In the case of 20 minutes, Amicure MY-24, PN-31, PN-40, etc. (trade name, Ajinomoto) Hardner II-4070 as the first curing agent component which reacts with the epoxy resin and cures under these conditions 4338, 4339 etc. (trade name, ADEKA) Cure Duct P-0505, P-1090 etc. (Shikoku Chemical Industry).
【００２３】また、第２硬化条件として硬化温度を１２
０〜１５０度に設定し、硬化時間を３０〜１８０分とし
た場合には、この条件下でエポキシ樹脂と反応する第２
硬化剤成分として、 ハードナーＥＨ−３８４２，３３６６等（商品名、アデ
カ） フジキュア−ＰＸＥ−１０００等（商品名、富士化成工
業） キュアゾール２ＭＡＯＫ，２ＭＺＣＮ，２ＰＺＣＮ等
（四国化成工業） フェノール樹脂の促進剤として、 ＥＰＣＡＴ−Ｐ（トリフェニルフォスフィンのマイクロ
カプセル（日本化薬））、 ノバキュアＨＸ−３７４１，３７２１（イミダゾールの
マイクロカプセル（旭化成）） 等が挙げられる。Further, as a second curing condition, a curing temperature of 12
When the temperature is set to 0 to 150 degrees and the curing time is set to 30 to 180 minutes, the second reacting with the epoxy resin under these conditions is performed.
Hardener EH-3842, 3366, etc. (trade name, Adeka) Fujicure-PXE-1000, etc. (trade name, Fuji Kasei Kogyo) Curesol 2MAOK, 2MZCN, 2PZCN, etc. (Shikoku Kasei Kogyo) As a phenolic resin accelerator And EPCAT-P (microcapsules of triphenylphosphine (Nippon Kayaku)), Novacure HX-3741, 3721 (microcapsules of imidazole (Asahi Kasei)) and the like.
【００２４】樹脂２２は、これら第１硬化剤成分及び第
２硬化剤成分をエポキシ樹脂に、等量の０．８〜１．２
に配合するが、第１硬化剤成分は等量の０．２〜０．６
の範囲で配合し、第２硬化剤成分は等量の０．４〜０．
８の範囲で配合するのが望ましい。第１硬化剤成分の配
合量が少ないと、第１硬化条件下で硬化させても硬化せ
ずに液状のままであり、逆に配合量が多いと固くなり過
ぎて工程Ｓ１６において変形させることが不可能とな
る。The resin 22 is prepared by adding the first curing agent component and the second curing agent component to an epoxy resin and using an equivalent amount of 0.8 to 1.2.
But the first curing agent component has an equivalent amount of 0.2 to 0.6.
And the second curing agent component has an equivalent amount of 0.4 to 0.1.
It is desirable to mix in the range of 8. If the blending amount of the first curing agent component is small, even if it is cured under the first curing condition, it does not cure and remains in a liquid state, while if the blending amount is large, it becomes too hard and may be deformed in step S16. Impossible.
【００２５】また、エポキシ樹脂には特に限定はなく、
目的とする特性に適するものを適宜選択又は適宜混合し
て使用する。但し、上記硬化剤、フィラー、その他の添
加剤を配合した配合物が、常温で１０〜１０００Ｐａ・
ｓ程度の粘度になることが望ましい。そのためには、常
温で液状のエポキシ樹脂を主体に使用することが好まし
い。樹脂２２の粘度が１０Ｐａ・ｓ以下である場合に
は、封止物の形状を保持させることが難しくまた、樹脂
２２の孔版１８裏面への裏周り等により印刷工程の連続
した実施が困難となる。逆に樹脂２２の粘度が１０００
Ｐａ・ｓを以上となると、粘度が高くなり過ぎて常温で
の印刷が困難となる。The epoxy resin is not particularly limited.
Those suitable for the intended properties are appropriately selected or appropriately mixed and used. However, the composition containing the above curing agent, filler and other additives is 10 to 1000 Pa ·
It is desirable that the viscosity be about s. For this purpose, it is preferable to mainly use a liquid epoxy resin at room temperature. When the viscosity of the resin 22 is 10 Pa · s or less, it is difficult to maintain the shape of the sealing material, and it is difficult to continuously perform the printing process due to the back of the resin 22 on the back surface of the stencil 18. . Conversely, if the viscosity of the resin 22 is 1000
When it is more than Pa · s, the viscosity becomes too high and printing at normal temperature becomes difficult.
【００２６】更に、配合するフィラーにも特に限定はな
いが、シリカ粉末を主体にして、放熱性が必要な場合に
は、アルミナ粉末、窒化アルミナ粉末、窒化ホウ素粉
末、窒化ケイ素粉末等を適宜選択して或いは混合して用
いる。これらフィラー粉末は、電子部品素子１２へのダ
メージや孔版１８、スキージ２０の損耗の点から、球形
が望ましくまた粒径は５０μｍ以下のものが望ましい。
その他添加剤としては、カップリング剤、消泡剤、着色
剤等を適宜必要に応じて選択して加えてもよい。Further, the filler to be added is not particularly limited. If silica powder is mainly used and heat radiation is required, alumina powder, alumina nitride powder, boron nitride powder, silicon nitride powder and the like are appropriately selected. Or mixed. These filler powders are preferably spherical and have a particle size of 50 μm or less from the viewpoint of damage to the electronic component element 12 and wear of the stencil 18 and the squeegee 20.
As other additives, a coupling agent, an antifoaming agent, a coloring agent, and the like may be appropriately selected and added as needed.
【００２７】以上の第１硬化剤成分と第２硬化剤成分と
を含む樹脂２２を第１硬化条件（例えば、硬化温度を８
０度に設定し、硬化時間を１時間とした場合）下におけ
る処理を行った後は、一部のエポキシ樹脂と第１硬化剤
成分とが反応した状態であって、残りのエポキシ樹脂と
第２硬化剤成分とは、反応を起こさずそのままの状態で
残っている。第１硬化剤成分と第２硬化剤成分との合計
量は、エポキシ重視の量に対しての化学量論的な等量の
０：８〜１．２の範囲である。The resin 22 containing the first curing agent component and the second curing agent component is subjected to first curing conditions (for example, a curing temperature of 8
After setting the temperature to 0 degrees and setting the curing time to 1 hour), the lower epoxy resin and the first curing agent component are reacted with each other. 2 The hardener component remains as it is without causing a reaction. The total amount of the first curing agent component and the second curing agent component is in the range of 0: 8 to 1.2, which is a stoichiometric equivalent to the epoxy-oriented amount.
【００２８】第１硬化条件下において硬化させた後の樹
脂２２の状態は、熱時においても流動性のない固体であ
って且つ、外部からの物理的圧力によって変形する状態
である。しかしながら、かかる状態の樹脂２２は弾性を
有しないため、外部からの圧力から解放された後は、変
形した形状を留めて元の形状へは復元しない。しかも、
表面は強い粘着性を有しない（タックフリーである）。
このような状態にさせるには、第１硬化剤成分と第２硬
化剤成分との配合割合を調整することによってなし得
る。The state of the resin 22 after being cured under the first curing condition is a state in which the resin 22 is a solid that does not flow even when heated, and is deformed by external physical pressure. However, since the resin 22 in such a state does not have elasticity, after being released from an external pressure, the deformed shape is not restored to the original shape. Moreover,
The surface does not have strong tackiness (tack free).
Such a state can be achieved by adjusting the mixing ratio of the first curing agent component and the second curing agent component.
【００２９】第１硬化条件の下で硬化させた後で、樹脂
２２に上記の特性を持たせるためには、第１硬化条件に
おける硬化温度の設定が重要であって、硬化時間はあま
り重要ではない。つまり、第１硬化剤成分とエポキシ樹
脂の一部とを反応させるための最低限の時間を必要とす
るだけで、それ以上の時間が掛かったとしても第２硬化
剤成分とエポキシ樹脂とが反応する訳ではないので、さ
したる影響はない。In order for the resin 22 to have the above-mentioned properties after being cured under the first curing condition, it is important to set the curing temperature under the first curing condition, and the curing time is not so important. Absent. In other words, only a minimum time is required for reacting the first curing agent component with a part of the epoxy resin, and even if it takes more time, the second curing agent component reacts with the epoxy resin. It doesn't have any effect.
【００３０】次に、ＩＣカードで用いられる電子部品の
製造方法の概略について簡単に説明する。図８は、ＩＣ
カードで用いられる電子部品の製造方法の概略を説明す
るための断面図である。図８（ａ）は、電子部品素子３
４が基板３０上に搭載されている様子を示す断面図であ
る。図８（ａ）において、基板３０の裏面には電極及び
配線となる導体３２が設けられ、その表面には基板３０
に形成された孔を介して導体３２上に固着されている電
子部品素子３４が配置されている。電子部品素子３４は
ワイヤ線３６によって裏面に形成された導体３２と電気
的に接続されている。Next, an outline of a method for manufacturing an electronic component used in an IC card will be briefly described. FIG. 8 shows an IC
FIG. 4 is a cross-sectional view for explaining an outline of a method for manufacturing an electronic component used in the card. FIG. 8A shows the electronic component element 3.
FIG. 4 is a cross-sectional view showing a state in which a substrate 4 is mounted on a substrate 30. 8A, a conductor 32 serving as an electrode and a wiring is provided on the back surface of the substrate 30, and the substrate 30 is provided on the surface thereof.
An electronic component element 34 fixed on the conductor 32 via the hole formed in the electronic component 32 is disposed. The electronic component element 34 is electrically connected to the conductor 32 formed on the back surface by a wire 36.
【００３１】かかる基板３０上に図３を用いて説明した
印刷を行って樹脂３８を塗布し、樹脂３８を外部からの
加圧により変形可能な程度に硬化させる工程、つまり第
１硬化条件下において硬化させる工程が行われる。図８
（ｂ）は、印刷された樹脂３８を外部からの加圧により
変形可能な程度に硬化させた後の様子を示す断面図であ
る。図８（ｂ）に示すように、樹脂３８の上面はなだら
かな形状となる。次に、樹脂３８の上面を平坦にする工
程が行われる訳であるが、ここでは樹脂３８の上面を平
坦にするため、図８（ｃ）に示したローラ４０が用いら
れる。A process of applying the printing described with reference to FIG. 3 on the substrate 30 to apply the resin 38 and curing the resin 38 to an extent capable of being deformed by applying pressure from the outside, that is, under the first curing condition A curing step is performed. FIG.
(B) is a cross-sectional view showing a state after the printed resin 38 has been cured to an extent capable of being deformed by external pressure. As shown in FIG. 8B, the upper surface of the resin 38 has a gentle shape. Next, a step of flattening the upper surface of the resin 38 is performed. Here, in order to flatten the upper surface of the resin 38, the roller 40 shown in FIG. 8C is used.
【００３２】図８（ｃ）はローラ４０を用いて樹脂３８
の上面を平坦化する様子を示す図である。このローラ４
０は、固定台４２との距離が一定に設定され、ローラ４
０と固定台４２との間を図８（ｂ）に示した基板３０等
を図８（ｃ）中符号ｄ２が付された方向に通過させるこ
とにより、樹脂３８の上面が平坦になる。このように、
ローラ４０を用いると、単にローラ４０と固定台４２と
の間に基板３０等を通過させるだけで樹脂３８の上面が
平坦となり、且つ各電子部品素子３４に塗布された樹脂
３８の高さ位置が均一に調整されるので極めて好適であ
る。以上の工程が終了すると、樹脂３８を第２硬化条件
下で硬化させ、基板１０を切断することにより図８
（ｄ）に示した各電子部品４４に分離する。図８（ｄ）
は電子部品４４をＩＣカードの外装材４６内部に配置し
た状態を示す断面図である。図８（ｄ）に示したよう
に、分離後の電子部品４４をＩＣカードの外装材４６内
部に配置することでＩＣカード４８が形成される。FIG. 8 (c) shows a resin 38 using a roller 40.
FIG. 4 is a diagram showing a state in which the upper surface of the substrate is flattened. This roller 4
0 indicates that the distance from the fixed base 42 is set to be constant and the roller 4
The upper surface of the resin 38 is flattened by passing the substrate 30 and the like shown in FIG. 8B in the direction indicated by reference symbol d2 in FIG. in this way,
When the roller 40 is used, the upper surface of the resin 38 is flattened simply by passing the substrate 30 or the like between the roller 40 and the fixing table 42, and the height position of the resin 38 applied to each electronic component element 34 is reduced. It is very suitable because it is adjusted uniformly. When the above steps are completed, the resin 38 is cured under the second curing condition, and the substrate 10 is cut to obtain a structure shown in FIG.
It is separated into each electronic component 44 shown in (d). FIG. 8 (d)
FIG. 4 is a cross-sectional view showing a state in which the electronic component 44 is arranged inside the exterior material 46 of the IC card. As shown in FIG. 8D, an IC card 48 is formed by arranging the separated electronic components 44 inside the exterior material 46 of the IC card.
【００３３】次に、電子部品としてのＩＣパッケージの
製造方法の概略について簡単に説明する。図９は、ＩＣ
パッケージの製造方法の概略を説明するための断面図で
ある。図９（ａ）は、電子部品素子５２が基板５０上に
搭載されている様子を示す断面図である。図９（ａ）に
おいて、基板５０の上面には複数の電子部品素子電子部
品素子５２が実装されており、各電子部品素子５２はワ
イヤ線５４によって基板５０と電気的に接続されてい
る。尚、電子部品装置５２はバンプ接続によって基板５
０と接続されていても良い。Next, an outline of a method of manufacturing an IC package as an electronic component will be briefly described. FIG. 9 shows an IC
FIG. 4 is a cross-sectional view for describing an outline of a method for manufacturing a package. FIG. 9A is a cross-sectional view illustrating a state in which the electronic component element 52 is mounted on the substrate 50. In FIG. 9A, a plurality of electronic component elements 52 are mounted on the upper surface of the substrate 50, and each of the electronic component elements 52 is electrically connected to the substrate 50 by a wire 54. The electronic component device 52 is connected to the substrate 5 by bump connection.
It may be connected to 0.
【００３４】かかる基板５０上に図３を用いて説明した
印刷を行って樹脂５６を塗布し、樹脂５６を外部からの
加圧により変形可能な程度に硬化させる工程、つまり第
１硬化条件下において硬化させる工程が行われる。図９
（ｂ）は、印刷された樹脂５６を外部からの加圧により
変形可能な程度に硬化させた後の様子を示す断面図であ
る。図９（ｂ）に示すように、樹脂５６上面はなだらか
な形状となる。次に、樹脂５６の上面を平坦にする工程
が行われる訳であるが、ここでは図９（ｃ）に示したプ
レス機６０が用いられる。On the substrate 50, the printing described with reference to FIG. 3 is performed to apply the resin 56, and the resin 56 is cured to an extent capable of being deformed by external pressure, that is, under the first curing condition. A curing step is performed. FIG.
(B) is a cross-sectional view showing a state after the printed resin 56 is cured to an extent capable of being deformed by external pressure. As shown in FIG. 9B, the upper surface of the resin 56 has a gentle shape. Next, a step of flattening the upper surface of the resin 56 is performed. Here, the press machine 60 shown in FIG. 9C is used.
【００３５】図９（ｃ）はプレス機５８を用いて樹脂５
６の表面を平坦化する様子を示す図である。プレス機５
８は、互いに平行に対面する土台部５８ｂと可動部５８
ａとからなり、土台部５８ｂ上に基板５０等を配置し、
可動部５８ａと土台部５８ｂに近接させることにより樹
脂５６の上面を平坦化する。以上の工程が終了すると、
樹脂３８を第２硬化条件下で硬化させる。図９（ｄ）は
樹脂５６を第２硬化条件下で硬化させた後の形状を示す
断面図である。FIG. 9C shows the resin 5 using the press 58.
FIG. 6 is a diagram showing how the surface of No. 6 is flattened. Press machine 5
8 includes a base portion 58b and a movable portion 58 facing each other in parallel.
a, the substrate 50 and the like are arranged on the base portion 58b,
The upper surface of the resin 56 is flattened by approaching the movable portion 58a and the base portion 58b. When the above steps are completed,
The resin 38 is cured under the second curing condition. FIG. 9D is a cross-sectional view illustrating a shape after the resin 56 is cured under the second curing condition.
【００３６】図９（ｄ）に示したように、各電子部品素
子５２が配置されている位置全てにおける樹脂５６の高
さ位置が均一となっている。図９（ｄ）は、形成される
電子部品を示す断面図である。樹脂５６を硬化させた後
は、基板１０の裏面に接続用の接続ボール６０を形成
し、次いで基板５０及び樹脂５６をダイサー等の切断機
で切断することにより各電子部品６２を形成する。以
上、本発明の一実施形態による電子部品の製造方法及び
当該方法で用いる液状樹脂について説明したが、本発明
は上記実施形態に制限されることなく、本発明の範囲内
で自由に変更が可能である。As shown in FIG. 9D, the height position of the resin 56 is uniform at all positions where the electronic component elements 52 are arranged. FIG. 9D is a cross-sectional view illustrating an electronic component to be formed. After the resin 56 is cured, connection balls 60 for connection are formed on the back surface of the substrate 10, and then the electronic components 62 are formed by cutting the substrate 50 and the resin 56 with a cutting machine such as a dicer. As described above, the method for manufacturing an electronic component according to one embodiment of the present invention and the liquid resin used in the method have been described. However, the present invention is not limited to the above embodiment, and can be freely modified within the scope of the present invention. It is.
【００３７】[0037]
【発明の効果】以上説明したように、本発明によれば、
厚さの制限される電子部品を安価に且つ単位時間に大量
に製造することができるという効果がある。また、熱発
散性が要求される電子部品も安価に且つ単位時間に大量
に製造することができるという効果がある。As described above, according to the present invention,
There is an effect that an electronic component having a limited thickness can be mass-produced inexpensively and in a unit time. In addition, there is an effect that electronic parts requiring heat dissipation can be manufactured in large quantities at low cost and per unit time.
【図１】 本発明の一実施形態による電子部品の製造方
法の工程順を示すフローチャートである。FIG. 1 is a flowchart showing a process sequence of a method for manufacturing an electronic component according to an embodiment of the present invention.
【図２】 電子部品素子１２が基板１０上に搭載された
様子を示す断面図である。FIG. 2 is a cross-sectional view showing a state where the electronic component element 12 is mounted on a substrate 10.
【図３】 印刷によって電子部品素子１２を封止する様
子を示す断面図である。FIG. 3 is a cross-sectional view showing how the electronic component element 12 is sealed by printing.
【図４】 第１硬化工程終了後の樹脂２２の形状を示す
断面図である。FIG. 4 is a cross-sectional view illustrating a shape of a resin 22 after a first curing step is completed.
【図５】 樹脂２２の表面を平坦化させる様子を示す断
面図である。FIG. 5 is a cross-sectional view showing how the surface of a resin 22 is flattened.
【図６】 工程Ｓ１６を終えた後の樹脂２２の形状を示
す断面図である。FIG. 6 is a cross-sectional view illustrating a shape of a resin 22 after a step S16 is completed.
【図７】 工程Ｓ１０〜工程Ｓ１８を終えて形成された
電子部品の外観を示す図である。FIG. 7 is a diagram showing an appearance of an electronic component formed after completing steps S10 to S18.
【図８】 ＩＣカードで用いられる電子部品の製造方法
の概略を説明するための断面図である。FIG. 8 is a cross-sectional view for explaining an outline of a method of manufacturing an electronic component used in an IC card.
【図９】 ＩＣパッケージの製造方法の概略を説明する
ための断面図である。FIG. 9 is a cross-sectional view for explaining an outline of a method of manufacturing an IC package.
【符号の説明】 １０，３０，５０ 基板 １２，３４，５２ 電子部品素子 ２２，３８，５６ 樹脂 ２４ 平板（金属平板）[Description of Signs] 10, 30, 50 Substrate 12, 34, 52 Electronic Component Element 22, 38, 56 Resin 24 Flat Plate (Metal Flat Plate)
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4M109 AA01 BA03 CA05 CA12 DA07 EA03 EB02 EB03 EB04 EC06 EC20 GA03 GA05 5E314 AA25 AA31 AA32 AA42 BB02 CC06 FF02 FF03 FF05 FF21 GG24 5F061 AA01 BA03 CA12 CB13 DE03 FA03 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA01 BA03 CA05 CA12 DA07 EA03 EB02 EB03 EB04 EC06 EC20 GA03 GA05 5E314 AA25 AA31 AA32 AA42 BB02 CC06 FF02 FF03 FF05 FF21 GG24 5F061 AA01 BA03 CA12 CB13 DE03
Claims (10)
塗布する塗布工程と、 前記樹脂を外部からの加圧により変形可能な程度に硬化
させる第１硬化工程と、 前記樹脂の表面を平坦化する平坦化工程と、 前記平坦化した樹脂を硬化させる第２硬化工程とを有す
ることを特徴とする電子部品の製造方法。An application step of applying a resin to a substrate on which an electronic component element is mounted; a first curing step of curing the resin to an extent capable of being deformed by an external pressure; and flattening a surface of the resin. A method for manufacturing an electronic component, comprising: a flattening step of making the surface flattened; and a second curing step of hardening the flattened resin.
塗布する工程であることを特徴とする請求項１記載の電
子部品の製造方法。2. The method according to claim 1, wherein said applying step is a step of applying said resin by printing.
徴とする請求項２記載の電子部品の製造方法。3. The method according to claim 2, wherein the resin is printed under vacuum.
前記樹脂に熱を加えて硬化させる工程であることを特徴
とする請求項１から請求項３の何れか一項に記載の電子
部品の製造方法。4. The first curing step and the second step,
The method for manufacturing an electronic component according to claim 1, wherein the method is a step of curing the resin by applying heat.
前記第２工程で設定される温度よりも低いことを特徴と
する請求項４記載の電子部品の製造方法。5. The temperature set in the first curing step is:
The method according to claim 4, wherein the temperature is lower than the temperature set in the second step.
温度で硬化する第１硬化剤と、 前記第１工程で設定される温度では硬化せず、前記第２
工程で設定される温度で硬化する第２硬化剤とを含むこ
とを特徴とする請求項５記載の電子部品の製造方法。6. A first curing agent that cures at a temperature set in the first step, wherein the resin does not cure at a temperature set in the first step,
The method for manufacturing an electronic component according to claim 5, further comprising a second curing agent that cures at a temperature set in the step.
００Ｐａ・ｓであることを特徴とする請求項６記載の電
子部品の製造方法。7. The resin has a viscosity of 10 to 10 at room temperature.
7. The method for manufacturing an electronic component according to claim 6, wherein the pressure is 00 Pa · s.
樹脂に対して金属平板を押しつける工程であり、 前記第２硬化過程は、前記樹脂に対して押しつけた金属
平板とともに前記樹脂を硬化させる工程であることを特
徴とする請求項１から請求項７の何れか一項に記載の電
子部品の製造方法。8. The flattening step is a step of pressing a metal flat plate against the resin applied to the substrate, and the second curing step is to harden the resin together with the metal flat plate pressed against the resin. The method of manufacturing an electronic component according to claim 1, wherein the method is a process.
液状樹脂であって、第１温度で硬化する第１硬化剤と、 前記第１温度では硬化せず、前記第１温度よりも高い第
２温度で硬化する第２硬化剤とを含むことを特徴とする
液状樹脂。9. A liquid resin used for sealing an electronic component element, which is a first curing agent which cures at a first temperature, and which does not cure at the first temperature but is higher than the first temperature. A second curing agent that cures at a second temperature.
０００Ｐａ・ｓであることを特徴とする請求項９記載の
液状樹脂。10. The viscosity of the resin is 10 to 1 at room temperature.
The liquid resin according to claim 9, wherein the pressure is 000 Pa · s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000241540A JP3453113B2 (en) | 2000-08-09 | 2000-08-09 | Manufacturing method of electronic component and liquid resin used in the method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000241540A JP3453113B2 (en) | 2000-08-09 | 2000-08-09 | Manufacturing method of electronic component and liquid resin used in the method |
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| Publication Number | Publication Date |
|---|---|
| JP2002057175A true JP2002057175A (en) | 2002-02-22 |
| JP3453113B2 JP3453113B2 (en) | 2003-10-06 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021344A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Resin sealing device |
| JP2010141261A (en) * | 2008-12-15 | 2010-06-24 | Elpida Memory Inc | Intermediate structure for semiconductor device and method for manufacturing intermediate structure |
| WO2017181701A1 (en) * | 2016-04-19 | 2017-10-26 | 武汉电信器件有限公司 | Cob bonding technique-based laser diode interface mating device |
-
2000
- 2000-08-09 JP JP2000241540A patent/JP3453113B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021344A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Resin sealing device |
| JP2010141261A (en) * | 2008-12-15 | 2010-06-24 | Elpida Memory Inc | Intermediate structure for semiconductor device and method for manufacturing intermediate structure |
| WO2017181701A1 (en) * | 2016-04-19 | 2017-10-26 | 武汉电信器件有限公司 | Cob bonding technique-based laser diode interface mating device |
| US10700488B2 (en) | 2016-04-19 | 2020-06-30 | Wuhan Telecommunication Devices Co., Ltd. | COB bonding laser diode interface mating device |
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