JP2002043811A - Millimeter-band high-frequency device - Google Patents
Millimeter-band high-frequency deviceInfo
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- JP2002043811A JP2002043811A JP2000225499A JP2000225499A JP2002043811A JP 2002043811 A JP2002043811 A JP 2002043811A JP 2000225499 A JP2000225499 A JP 2000225499A JP 2000225499 A JP2000225499 A JP 2000225499A JP 2002043811 A JP2002043811 A JP 2002043811A
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- millimeter
- matching circuit
- frequency device
- connection
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、接続端がコプレナ
ー線路或いはグランドコプレナー線路からなる高周波部
品をバンプ接続し、且つ接続部を介して入出力される信
号をマイクロストリップ線路にて伝送するミリ波帯高周
波装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a millimeter for connecting a high-frequency component comprising a coplanar line or a ground coplanar line to a connection end by bump connection, and transmitting a signal input / output via a connection portion via a microstrip line. The present invention relates to a waveband high-frequency device.
【０００２】[0002]
【従来の技術】従来より、ミリ波帯（３０ＧＨｚ〜３０
０ＧＨｚ）の信号を扱うＭＭＩＣ（Microwave Monolith
ic Integrated Circuit ）等の高周波部品を、回路基板
上に実装する場合、高周波特性に影響を与える接続部の
導体の長さを極力短くするために、高周波部品の下面に
形成された接続用電極と、これと対向する回路基板上に
配設された接続用電極とをバンプ接続することが行われ
ている。2. Description of the Related Art Conventionally, in the millimeter wave band (30 GHz to 30 GHz).
MMIC (Microwave Monolith) that handles signals of 0 GHz
When mounting a high-frequency component such as an integrated circuit (IC) on a circuit board, a connection electrode formed on the lower surface of the high-frequency component is used to minimize the length of the conductor at the connection portion that affects high-frequency characteristics. A bump connection is made between the electrode and a connection electrode provided on a circuit board facing the bump.
【０００３】しかし、ミリ波帯のような周波数領域で
は、バンプ接続したとしても、その接続部分が伝送特性
に与える影響は大きく、接続部分で特性インピーダンス
が不整合となってしまうため、信号の反射により大きな
伝送損失が生じる。その結果、回路基板上に実装された
高周波部品の能力を、充分に引き出すことができないと
いう問題があった。However, in a frequency region such as a millimeter wave band, even if bump connection is performed, the connection portion has a large effect on transmission characteristics, and characteristic impedance is mismatched at the connection portion. Causes a large transmission loss. As a result, there has been a problem that the capability of the high-frequency component mounted on the circuit board cannot be fully utilized.
【０００４】これに対して、特開平９−２１９４２２号
公報には、コプレナー線路又はグランドコプレナー線路
（以下、一括して「コプレナー線路」という）からなる
伝送線路同士をバンプ接続する際に、接続部付近におけ
るコプレナー線路の信号線導体パタンと接地導体パタン
とのギャップを、バンプの高さに応じて適宜広げること
により特性インピーダンスの整合をとるようにしたもの
が開示されている。[0004] On the other hand, Japanese Patent Application Laid-Open No. 9-219422 discloses a method for connecting a transmission line composed of a coplanar line or a ground coplanar line (hereinafter, collectively referred to as a "coplanar line") to a bump connection. A configuration is disclosed in which the gap between the signal line conductor pattern and the ground conductor pattern of the coplanar line in the vicinity of the portion is appropriately widened according to the height of the bump so as to match the characteristic impedance.
【０００５】また、特開平１１−６７９６９号公報に
は、回路基板上のマイクロストリップ線路上に形成され
た接続用電極から、この接続用電極にバンプ接続された
高周波部品によって覆われてしまう位置に向けてスタブ
を形成し、このスタブにより特性インピーダンスの整合
をとるようにしたものが開示されている。Japanese Patent Application Laid-Open No. 11-67969 discloses that a connection electrode formed on a microstrip line on a circuit board is located at a position covered by a high-frequency component bump-connected to the connection electrode. A stub is formed so that the characteristic impedance is matched with the stub.
【０００６】そして、上記公報には、これらの方法を用
いることにより、いずれも３０ＧＨｚ〜４０ＧＨｚ程度
までの高周波信号の伝送特性が改善されることが示され
ている。The above publications show that the use of these methods improves the transmission characteristics of high-frequency signals in the range of about 30 GHz to 40 GHz.
【０００７】[0007]
【発明が解決しようとする課題】しかし、これらの方法
では、いずれにしても、回路基板上に高周波部品を実装
した後では、トリミング等の調整ができないため、極め
て高精度な組み付けが要求されることになり、組み付け
作業が難しいという問題があった。However, in any of these methods, trimming or the like cannot be adjusted after the high-frequency component is mounted on the circuit board, so that extremely high-precision assembly is required. As a result, there was a problem that the assembling work was difficult.
【０００８】また、特に後者の場合、バンプの高さが低
い場合、使用周波数がより高い場合、回路基板の誘電率
が低くて電磁波が放射されやすい場合には、バンプ接続
された高周波部品の下部に位置するスタブが、高周波半
導体基板上の電極と電磁的に結合してしまい、整合回路
として機能しないという問題もあった。In particular, in the latter case, when the height of the bump is low, when the operating frequency is higher, or when the dielectric constant of the circuit board is low and electromagnetic waves are easily radiated, the lower part of the high frequency component connected to the bump is used. Is electromagnetically coupled to the electrodes on the high-frequency semiconductor substrate, and does not function as a matching circuit.
【０００９】実際に、障害物や先行車両の検出等に用い
られる車載用のレーダ装置では、Ｍバンド（４９．９Ｇ
Ｈｚ〜７５．８ＧＨｚ），Ｅバンド（６０．５ＧＨｚ〜
９２．０ＧＨｚ），Ｗバンド（７３．８ＧＨｚ〜１１
２．０ＧＨｚ）等、公報にて伝送特性が改善されること
が示された周波数帯より、更に高い周波数帯を使用する
ことが考えられており、しかも、これらの装置では、送
受信器を構成するＭＭＩＣ等を、アンテナが形成された
低誘電率基板と接続する必要があるため、このような装
置に対しては上述の方法を適用できないのである。Actually, in an on-vehicle radar device used for detecting an obstacle or a preceding vehicle, the M band (49.9G) is used.
Hz to 75.8 GHz), E band (60.5 GHz to
92.0 GHz), W band (73.8 GHz to 11
It is considered to use a frequency band higher than the frequency band in which the transmission characteristics are improved in the publication, such as 2.0 GHz), and these devices constitute a transceiver. Since the MMIC or the like needs to be connected to the low dielectric substrate on which the antenna is formed, the above method cannot be applied to such an apparatus.
【００１０】また、バンプ接続により回路基板上に実装
されるＭＭＩＣでは、接続部におけるグランドパターン
の処理が容易であることから、接地導体が信号線導体と
同一面に形成されたコプレナー線路が多用され、一方、
回路基板上では、高周波信号の伝送用に、単位長さ当た
りの損失が小さく作製も容易なマイクロストリップ線路
が多用されている。従って、このような場合、接続部で
は線路の変換を行う必要があり、この変換も、接続部で
の伝送特性を劣化させる要因の一つとなっていた。In the MMIC mounted on a circuit board by bump connection, a coplanar line in which a ground conductor is formed on the same plane as a signal line conductor is often used because a ground pattern in a connection portion is easily processed. ,on the other hand,
On a circuit board, a microstrip line that has a small loss per unit length and is easy to manufacture is frequently used for transmitting a high-frequency signal. Therefore, in such a case, it is necessary to convert the line at the connection part, and this conversion is also one of the factors that deteriorate the transmission characteristics at the connection part.
【００１１】本発明は、上記問題点を解決するために、
接続端子がコプレナー線路或いはグランドコプレナーか
らなる高周波部品がバンプ接続され、且つ線路種がマイ
クロストリップ線路に変換される接続部での伝送損失を
低減でき、接続された高周波部品の性能を充分に引き出
すことのできるミリ波帯高周波装置を提供することを目
的とする。The present invention has been made in order to solve the above problems.
A high-frequency component whose connection terminal is formed of a coplanar line or a ground coplanar is bump-connected, and the transmission loss at a connection portion where the line type is converted to a microstrip line can be reduced, and the performance of the connected high-frequency component can be sufficiently obtained. It is an object of the present invention to provide a millimeter-wave band high-frequency device that can perform the operation.
【００１２】[0012]
【課題を解決するための手段】上記目的を達成するため
の発明である請求項１記載のミリ波帯高周波装置を構成
する誘電体基板上では、接続端がコプレナー線路或いは
グランドコプレナー線路からなる高周波部品をバンプ接
続するための接続用電極から、コプレナー線路或いはグ
ランドコプレナー線路からなる変換線路が延設され、こ
の変換線路を介して、接続用電極を介して入出力される
信号を伝送するためのマイクロストリップ線路からなる
伝送線路が接続されていると共に、この伝送線路上には
接続用電極でのバンプ接続による不整合を補償するため
の整合回路が設けられている。According to the first aspect of the present invention, a connection end is formed of a coplanar line or a ground coplanar line. A conversion line composed of a coplanar line or a ground coplanar line extends from a connection electrode for bump connection of a high-frequency component, and transmits a signal input / output via the connection electrode via the conversion line. A transmission line composed of a microstrip line is connected, and a matching circuit for compensating for a mismatch due to bump connection at the connection electrode is provided on the transmission line.
【００１３】このように、本発明のミリ波帯高周波装置
では、接続用電極から離れた伝送線路上に整合回路が配
置されているので、高周波部品をバンプ接続により実装
した後でも、トリミング等による整合回路の調整を容易
に行うことができ、実装精度のばらつきに基づく不整合
を含めて補償することができる。As described above, in the millimeter-wave band high-frequency device of the present invention, since the matching circuit is disposed on the transmission line remote from the connection electrode, even after the high-frequency component is mounted by bump connection, trimming or the like is performed. The adjustment of the matching circuit can be easily performed, and the compensation including the mismatch based on the variation in the mounting accuracy can be performed.
【００１４】また、誘電体基板上に整合回路が設けられ
ているため、誘電体基板への実装前に高周波部品単体の
特性を測定することができ、不良な高周波部品が実装さ
れてしまうことを防止できる。なお、変換線路上に整合
回路を設けることも考えられるが、コプレナー線路（変
換線路）よりマイクロストリップ線路（伝送線路）の方
が、整合回路の作製が容易であり、しかも伝送モードが
安定している。このため、マイクロストリップ線路から
なる伝送線路上に整合回路を設けた本発明では、より安
定した整合特性を得ることができる。Further, since the matching circuit is provided on the dielectric substrate, it is possible to measure the characteristics of the high-frequency component itself before mounting on the dielectric substrate, and to prevent the defective high-frequency component from being mounted. Can be prevented. Although it is conceivable to provide a matching circuit on the conversion line, a microstrip line (transmission line) is easier to fabricate a matching circuit than a coplanar line (conversion line), and the transmission mode is stable. I have. Therefore, in the present invention in which the matching circuit is provided on the transmission line including the microstrip line, more stable matching characteristics can be obtained.
【００１５】ところで、整合回路は、請求項２記載のよ
うに、変換線路の信号線導体と同一面に形成された接地
導体から誘電体基板の基板厚の２倍以上離した位置に配
置することが望ましい。このように配置することで、整
合回路は、誘電体基板の裏面に形成された接地導体以外
の金属部分（即ち変換線路の信号線導体と同一面に形成
された接地導体）との結合が抑えられるため、ほぼ設計
通りの整合特性を得ることができ、接続部分の不整合を
精度よく補償することができる。The matching circuit is arranged at a position separated from the ground conductor formed on the same plane as the signal line conductor of the conversion line by at least twice the thickness of the dielectric substrate. Is desirable. By arranging in this manner, the matching circuit suppresses coupling with a metal portion other than the ground conductor formed on the back surface of the dielectric substrate (that is, the ground conductor formed on the same surface as the signal line conductor of the conversion line). Therefore, it is possible to obtain a matching characteristic substantially as designed, and it is possible to accurately compensate for a mismatch at the connection portion.
【００１６】また、整合回路は、請求項３記載のよう
に、スタブにて構成してもよいし、請求項５記載のよう
に、伝送線路の線路幅を１段或いは複数段に渡って変化
させた構造を有するように構成してもよい。特に前者
（請求項３）の場合、スタブの形状は、通常の線路状に
形成する以外に、請求項４記載のように、扇形に形成し
てもよい。この場合、整合回路の特性に影響を与えるパ
ラメータが増えるため、必要に応じて様々な特性を実現
することができる。Further, the matching circuit may be constituted by a stub as described in claim 3, or the line width of the transmission line may be changed over one or more stages as described in claim 5. You may comprise so that it may have the structure made. In particular, in the case of the former (claim 3), the stub may be formed in a sector shape as described in claim 4 in addition to the usual stub shape. In this case, since the number of parameters affecting the characteristics of the matching circuit increases, various characteristics can be realized as needed.
【００１７】次に、接続用電極，変換線路，マイクロス
トリップ線路が形成される誘電体基板としては、例え
ば、請求項６記載のように、誘電率が３以下の低誘電率
基板を用いてもよいし、請求項７記載のように、アルミ
ナ基板を用いてもよい。前者（請求項６）の場合、低誘
電率基板上にはアンテナや導波管変換器を形成でき、こ
の低誘電率基板上に高周波部品を直接接続できるため、
これらをアンテナ等を必須要件とする装置の小型化，高
性能化を図ることができる。即ち、従来は、通常、高周
波部品が実装された基板と、アンテナ等が形成された基
板とが別体に形成され、これらを接続する中間基板が必
要であったが、これを省略でき、その結果、接続箇所も
減少するため伝送特性も向上する。Next, as the dielectric substrate on which the connection electrode, the conversion line, and the microstrip line are formed, for example, a low dielectric substrate having a dielectric constant of 3 or less may be used. Alternatively, an alumina substrate may be used. In the former case (claim 6), an antenna or a waveguide converter can be formed on a low dielectric substrate, and a high frequency component can be directly connected to the low dielectric substrate.
It is possible to achieve miniaturization and high performance of a device that requires an antenna or the like as an essential component. That is, in the past, usually, a substrate on which high-frequency components were mounted and a substrate on which an antenna and the like were formed were separately formed, and an intermediate substrate for connecting them was required, but this could be omitted. As a result, the number of connection points is reduced, so that the transmission characteristics are improved.
【００１８】また、後者（請求項７）の場合、アルミナ
基板は、微細加工が可能であり、既に確立されているＩ
Ｃプロセスをそのまま使用して作製できるため、より高
精度で安定した整合回路を実現することができる．In the latter case (claim 7), the alumina substrate can be finely processed, and the I.sub.
Since it can be manufactured using the C process as it is, a more accurate and stable matching circuit can be realized.
【００１９】[0019]
【発明の実施の形態】以下に本発明の実施形態を図面と
共に説明する。 ［第１実施形態］図１は、第１実施形態のミリ波帯高周
波装置の主要部の構成を表す平面図、及びそのＡ−Ａ断
面図である。Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 is a plan view showing a configuration of a main part of a millimeter wave band high-frequency device according to a first embodiment, and a sectional view taken along line AA of FIG.
【００２０】図１に示すように、本実施形態のミリ波帯
高周波装置２は、一方の面が全面的に接地導体５にて覆
われた誘電体基板４を備えており、この誘電体基板４上
には、接続端がコプレナー線路或いはグランドコプレナ
ー線路からなるＭＭＩＣ２０をバンプ接続するための接
続用電極１２、及び接続用電極１２を介して入出力され
る信号を伝送するためのマイクロストリップ線路からな
る伝送線路６が形成されている。As shown in FIG. 1, the millimeter-wave band high-frequency device 2 of the present embodiment includes a dielectric substrate 4 whose one surface is entirely covered with a ground conductor 5. 4, a connection electrode 12 for bump-connecting an MMIC 20 having a connection end formed of a coplanar line or a ground coplanar line, and a microstrip line for transmitting a signal input / output via the connection electrode 12. Is formed.
【００２１】そして、接続用電極１２と伝送線路６と
は、グランドコプレナー線路からなる変換線路８を介し
て接続されていると共に、伝送線路６上には、変換線路
８との接続点から所定距離Ｌｗだけ離れた位置に、接続
用電極１２でのバンプ接続により生じる特性インピーダ
ンスの不整合を補償するためのオープンスタブからなる
整合回路１０が設けられている。The connection electrode 12 and the transmission line 6 are connected via a conversion line 8 composed of a ground coplanar line, and a predetermined point is provided on the transmission line 6 from a connection point with the conversion line 8. At a position separated by the distance Lw, a matching circuit 10 composed of an open stub for compensating for a mismatch of characteristic impedance caused by bump connection at the connection electrode 12 is provided.
【００２２】なお、変換線路８において、信号線導体と
同一面に形成された接地導体は、誘電体基板４の裏面に
形成された接地導体５に、ビアホール１４を介して接続
されている。ここで、伝送線路６，変換線路８，整合回
路１０を規程する各種パラメータの設計手順を説明す
る。In the conversion line 8, the ground conductor formed on the same plane as the signal line conductor is connected to the ground conductor 5 formed on the back surface of the dielectric substrate 4 via a via hole 14. Here, a description will be given of a design procedure of various parameters defining the transmission line 6, the conversion line 8, and the matching circuit 10.
【００２３】まず、誘電体基板４の基板厚Ｗｐ，誘電率
εに基づき、伝送線路６の特性インピーダンスが使用周
波数帯で５０Ωとなるように伝送線路６の信号線導体幅
Ｗmsを設定する。次に、変換線路８の信号導体幅Ｗcp
を、安定した変換を行うため伝送線路６の信号線導体幅
Ｗmsに近い値に設定し、更に変換線路８の特性インピー
ダンスが５０Ωになるように、信号線導体８ａと接地導
体８ｂとのギャップ幅Ｇcpを設定する。First, the signal line conductor width Wms of the transmission line 6 is set based on the substrate thickness Wp and the dielectric constant ε of the dielectric substrate 4 so that the characteristic impedance of the transmission line 6 becomes 50Ω in the operating frequency band. Next, the signal conductor width Wcp of the conversion line 8
Is set to a value close to the signal line conductor width Wms of the transmission line 6 in order to perform stable conversion, and the gap width between the signal line conductor 8a and the ground conductor 8b is set so that the characteristic impedance of the conversion line 8 becomes 50Ω. Set Gcp.
【００２４】なお、変換線路８の両端部、即ち伝送線路
６及び接続用電極１２との接続部分では、信号線導体の
幅が異なっている場合、これを連続的に変化させるため
テーパ状に形成する。次に、変換線路８の接地導体８ｂ
から整合回路１０までの距離Ｌｗを誘電体基板４の基板
厚Ｗｐの２倍以上に設定し、バンプ接続が伝送特性に及
ぼす影響を補償するように、整合回路１０の各パラメー
タ（本実施形態ではスタブの長さＬｓ，スタブの幅Ｗ
ｓ）を設定する。In addition, when the width of the signal line conductor is different at both ends of the conversion line 8, that is, at the connection portion between the transmission line 6 and the connection electrode 12, the signal line conductor is formed in a tapered shape in order to change the width continuously. I do. Next, the ground conductor 8b of the conversion line 8
Of the matching circuit 10 (in the present embodiment, the distance Lw from the substrate to the matching circuit 10 is set to be at least twice the substrate thickness Wp of the dielectric substrate 4 so as to compensate for the effect of the bump connection on the transmission characteristics. Stub length Ls, stub width W
s) is set.
【００２５】なお、バンプ接続が伝送特性に及ぼす影響
は、実際には、誘電体基板４上に整合回路１０を省略し
た回路（図５参照）を想定し、ＭＭＩＣ２０をバンプ接
続した時の伝送特性をシミュレータにて求める。その結
果に基づき、使用周波数帯での反射特性が改善されるよ
うに、整合回路１０の各パラメータをシミュレーション
により決定する。The effect of the bump connection on the transmission characteristics is actually based on the assumption that a circuit in which the matching circuit 10 is omitted on the dielectric substrate 4 (see FIG. 5) and the transmission characteristics when the MMIC 20 is bump-connected. Is obtained by the simulator. Based on the result, the parameters of the matching circuit 10 are determined by simulation so that the reflection characteristics in the used frequency band are improved.
【００２６】以上説明したように、本実施形態のミリ波
帯高周波装置２においては、ＭＭＩＣ２０がバンプ接続
される接続用電極１２と、この接続用電極１２を介して
入出力される信号を伝送するために、誘電体基板４上に
形成されたマイクロストリップ線路からなる伝送線路６
とを、ＭＭＩＣ２０側の線路と同じコプレナー線路（こ
こではグランドコプレナー線路）からなる変換線路８を
介して接続し、伝送線路６上に、バンプ接続による不整
合を補償するための整合回路１０を設けている。As described above, in the millimeter-wave band high-frequency device 2 of the present embodiment, the connection electrode 12 to which the MMIC 20 is bump-connected and the signals input and output via the connection electrode 12 are transmitted. Therefore, the transmission line 6 composed of a microstrip line formed on the dielectric substrate 4
Are connected via a conversion line 8 composed of the same coplanar line (here, a ground coplanar line) as the line on the MMIC 20 side, and a matching circuit 10 for compensating for a mismatch due to bump connection is provided on the transmission line 6. Provided.
【００２７】このように、本実施形態のミリ波帯高周波
装置２によれば、接続用電極１２から離れた伝送線路６
上に整合回路１０が位置しているため、ＭＭＩＣ２０を
バンプ接続により実装した後でも、トリミング等による
整合回路１０の調整を容易に行うことができ、ＭＭＩＣ
２０の特性や実装精度のばらつき等に基づく不整合をも
含めて補償することができる。As described above, according to the millimeter-wave band high-frequency device 2 of the present embodiment, the transmission line 6 separated from the connection electrode 12
Since the matching circuit 10 is located on the upper side, even after the MMIC 20 is mounted by bump connection, the adjustment of the matching circuit 10 by trimming or the like can be easily performed.
It is possible to compensate for mismatches based on characteristics of the semiconductor device 20 and variations in mounting accuracy.
【００２８】また、本実施形態のミリ波帯高周波装置２
では、整合回路１０を、変換線路８の信号線導体８ａと
同一面に形成された接地導体８ｂから誘電体基板４の基
板厚Ｗｐの２倍以上離した位置に配置しているため、整
合回路１０は、誘電体基板４の裏面に形成された接地導
体５以外の金属部分（特に変換線路８の接地導体８ｂ）
との結合が抑えられるため、ほぼ設計通りの整合特性を
得ることができ、接続部分の不整合を精度よく補償する
ことができる。 ［第２実施形態］次に、第２実施形態について説明す
る。Also, the millimeter-wave band high-frequency device 2 of the present embodiment
Since the matching circuit 10 is arranged at a position separated from the ground conductor 8b formed on the same plane as the signal line conductor 8a of the conversion line 8 by at least twice the substrate thickness Wp of the dielectric substrate 4, the matching circuit 10 Reference numeral 10 denotes a metal portion other than the ground conductor 5 formed on the back surface of the dielectric substrate 4 (particularly, the ground conductor 8b of the conversion line 8).
Therefore, the matching characteristics as designed can be obtained, and the mismatch at the connection portion can be compensated with high accuracy. [Second Embodiment] Next, a second embodiment will be described.
【００２９】本実施形態では、整合回路の構成が第１実
施形態とは異なっているだけであるため、この整合回路
についてのみ説明する。即ち、本実施形態において、整
合回路１０ａは、図２に示すように、円形状のパタン
を、その中心から見た角度θ分だけ切り取った形状、即
ち扇形のスタブからなる。In the present embodiment, only the configuration of the matching circuit is different from that of the first embodiment. Therefore, only this matching circuit will be described. That is, in the present embodiment, as shown in FIG. 2, the matching circuit 10a has a shape obtained by cutting a circular pattern by an angle θ viewed from the center thereof, that is, a matching stub.
【００３０】そして、本実施形態では、整合回路１０ａ
の設計パラメータとして、伝送線路６との接続部分の幅
Ｗｏ、伝送線路６からの突出量Ｌｏ、上記角度θを用い
ることができ、これら各パラメータを、バンプ接続が伝
送特性に及ぼす影響を補償するように設定する。In this embodiment, the matching circuit 10a
, The width Wo of the connection portion with the transmission line 6, the amount of protrusion Lo from the transmission line 6, and the angle θ can be used as design parameters. These parameters are used to compensate for the effect of the bump connection on the transmission characteristics. Set as follows.
【００３１】以上説明したように、本実施形態のミリ波
帯高周波装置２ａによれば、第１実施形態のミリ波帯高
周波装置２と同様の効果を得ることができる。特に、本
実施形態では、整合回路１０ａの設計パラメータが第１
実施形態の整合回路１０より一つ増えているため、設計
の自由度が広がる。 ［第３実施形態］次に、第３実施形態について説明す
る。As described above, according to the millimeter-wave band high-frequency device 2a of the present embodiment, the same effects as those of the millimeter-wave band high-frequency device 2 of the first embodiment can be obtained. In particular, in the present embodiment, the design parameters of the matching circuit 10a are the first
Since the number of matching circuits is increased by one compared with the matching circuit 10 of the embodiment, the degree of freedom of design is increased. Third Embodiment Next, a third embodiment will be described.
【００３２】本実施形態は、整合回路の構成が第１及び
第２実施形態とは異なっているだけであるため、この整
合回路についてのみ説明する。即ち、本実施形態におい
て、整合回路１０ｂは、図３に示すように、通常の伝送
線路６の信号線導体幅Ｗmsより広い線路幅Ｗ１を有する
１段目線路部Ｘ１と、同じく信号線導体幅Ｗmsより狭い
線路幅Ｗ２を有する２段目線路部Ｘ２とからなり、伝送
線路６の信号線導体幅Ｗmsを２段に渡って変化させた形
状を有している。This embodiment is different from the first and second embodiments only in the configuration of the matching circuit. Therefore, only this matching circuit will be described. That is, in the present embodiment, as shown in FIG. 3, the matching circuit 10b includes a first-stage line portion X1 having a line width W1 wider than the signal line conductor width Wms of the normal transmission line 6, and a signal line conductor width similarly. It has a second-stage line portion X2 having a line width W2 smaller than Wms, and has a shape in which the signal line conductor width Wms of the transmission line 6 is changed over two stages.
【００３３】そして、本実施形態では、整合回路１０ｂ
の設計パラメータとして、１段目線路部Ｘ１の線路幅Ｗ
１，線路長Ｌ１、２段目線路部Ｘ２の線路幅Ｗ２，線路
長Ｌ２を用いることができ、これら各パラメータを、バ
ンプ接続が伝送特性に及ぼす影響を補償するように設定
する。In this embodiment, the matching circuit 10b
Line width W of the first-stage line portion X1 as a design parameter of
1, the line length L1, the line width W2 of the second-stage line portion X2, and the line length L2 can be used, and these parameters are set so as to compensate for the effect of the bump connection on the transmission characteristics.
【００３４】以上説明したように、本実施形態のミリ波
帯高周波装置２ｂによれば、第１実施形態のミリ波帯高
周波装置２と同様の効果を得ることができる。特に、本
実施形態では、線路幅の異なる線路部の段数を増加させ
ることにより、より様々な特性を実現できる。As described above, according to the millimeter-wave band high-frequency device 2b of the present embodiment, the same effects as those of the millimeter-wave band high-frequency device 2 of the first embodiment can be obtained. In particular, in the present embodiment, various characteristics can be realized by increasing the number of stages of line portions having different line widths.
【００３５】なお、上記第１及び第２実施形態では、整
合回路１０を一つのオープンスタブにより構成したが、
ショートスタブを用いたり、複数のスタブを組み合わせ
て構成してもよい。また、上記第１〜第３実施形態で
は、変換線路８を、グランドコプレナー線路により構成
したが、裏面に接地導体のないコプレナー線路により構
成してもよい。In the first and second embodiments, the matching circuit 10 is constituted by one open stub.
A short stub may be used or a plurality of stubs may be combined. In the first to third embodiments, the conversion line 8 is configured by the ground coplanar line. However, the conversion line 8 may be configured by a coplanar line having no ground conductor on the back surface.
【００３６】ところで、誘電体基板４の誘電率εが高い
場合、マイクロストリップ線路からなる伝送線路６の信
号線導体幅Ｗmsを狭くできる。この場合、例えば、図４
に示すように、変換線路８は、その信号線導体幅Ｗcp
を、接続用電極１２の信号線導体幅Ｗｄとを同じ大きさ
に形成してもよい。また、伝送線路６との接続端側に
は、信号線導体８ａが伝送線路６の信号線導体幅と同じ
大きさとなる部分を付加してもよい。When the dielectric constant ε of the dielectric substrate 4 is high, the signal line conductor width Wms of the transmission line 6 composed of a microstrip line can be reduced. In this case, for example, FIG.
As shown in FIG. 7, the conversion line 8 has a signal line conductor width Wcp.
May be formed in the same size as the signal line conductor width Wd of the connection electrode 12. Further, a portion where the signal line conductor 8 a has the same size as the signal line conductor width of the transmission line 6 may be added to the connection end side with the transmission line 6.
【００３７】[0037]
【実施例】７０ＧＨｚ帯にて動作するように設計したミ
リ波帯高周波装置（実施例１〜６及び比較例１，２）を
用い、接続用電極１２に、高さ２０μｍ，直径４０μｍ
のバンプにてＭＭＩＣ２０を接続するものとして、ＭＭ
ＩＣ２０側から信号を入力した時の通過係数Ｓ２１およ
び反射係数Ｓ１１をシミュレータにより求めた。 ［比較例１］テフロン基板（Ｗｐ＝１２７μｍ，ε＝
２．２）上に、図５に示す回路、即ち、図１〜３に示し
た回路から整合回路を除去したものを形成した。但し、
Ｗms＝３７０μｍ，Ｗcp＝３１０μｍ，Ｇcp＝１００μ
ｍ，Ｗｄ＝１００μｍとした。これらのパラメータは実
施例１〜３も同様である。EXAMPLE Using a millimeter-wave band high-frequency device (Examples 1 to 6 and Comparative Examples 1 and 2) designed to operate in the 70 GHz band, the connecting electrode 12 was 20 μm high and 40 μm in diameter.
The MMIC 20 is connected by bumps of
The transmission coefficient S21 and the reflection coefficient S11 when a signal was input from the IC 20 side were obtained by a simulator. Comparative Example 1 Teflon substrate (Wp = 127 μm, ε =
2.2) On top of this, the circuit shown in FIG. 5, that is, the circuit shown in FIGS. However,
Wms = 370 μm, Wcp = 310 μm, Gcp = 100 μ
m, Wd = 100 μm. These parameters are the same in the first to third embodiments.
【００３８】本比較例での測定結果を図６に示す。 ［比較例２］アルミナ基板（Ｗｐ＝１００μｍ，ε＝１
０）上に、比較例１と同様の回路を形成した。但し、変
換線路は、図４に示した構成のものを用い、Ｗms＝９４
μｍ，Ｗcp＝Ｗｄ＝５２μｍ，Ｇcp＝４２μｍとした。
これらのパラメータは実施例４〜６も同様である。FIG. 6 shows the measurement results in this comparative example. Comparative Example 2 Alumina substrate (Wp = 100 μm, ε = 1
0) A circuit similar to that of Comparative Example 1 was formed thereon. However, the conversion line having the configuration shown in FIG.
μm, Wcp = Wd = 52 μm, and Gcp = 42 μm.
These parameters are the same in Examples 4 to 6.
【００３９】本比較例での測定結果を図７に示す。 ［実施例１］比較例１に第１実施形態に示した整合回路
１０を付加した構成とし、Ｌｗ＝３７０μｍ，Ｌｓ＝１
００μｍ，Ｗｓ＝３７０μｍとした。FIG. 7 shows the measurement results in this comparative example. [Example 1] A configuration in which the matching circuit 10 shown in the first embodiment is added to Comparative Example 1 is obtained, and Lw = 370 μm and Ls = 1.
00 μm and Ws = 370 μm.
【００４０】本実施例での測定結果を図８に示す。 ［実施例２］比較例１に第２実施形態に示した整合回路
１０ａを付加した構成とし、Ｌｗ＝３７０μｍ，Ｗｏ＝
１００μｍ，Ｌｏ＝１４０μｍ，θ＝６０°とした。FIG. 8 shows the measurement results in this embodiment. [Example 2] A configuration in which the matching circuit 10a shown in the second embodiment is added to Comparative example 1 is used, and Lw = 370 μm and Wo =
100 μm, Lo = 140 μm, and θ = 60 °.
【００４１】本実施例での測定結果を図９に示す。 ［実施例３］比較例１に第３実施形態に示した整合回路
１０ｂを付加した構成とし、Ｌｗ＝３７０μｍ，Ｌ１＝
３４４μｍ，Ｌ２＝７１０μｍ，Ｗ１＝５１２μｍ，Ｗ
２＝３５０μｍとした。FIG. 9 shows the measurement results in this embodiment. [Example 3] A configuration in which the matching circuit 10b described in the third embodiment is added to Comparative Example 1 is used, and Lw = 370 μm and L1 =
344 μm, L2 = 710 μm, W1 = 512 μm, W
2 = 350 μm.
【００４２】本実施例での測定結果を図１０に示す。 ［実施例４］比較例２に第１実施形態に示した整合回路
１０を付加した構成とし、Ｌｗ＝３５０μｍ，Ｌｓ＝８
４６μｍ，Ｗｓ＝９４μｍとした。FIG. 10 shows the measurement results in this embodiment. [Example 4] A configuration in which the matching circuit 10 shown in the first embodiment is added to Comparative Example 2 has a configuration of Lw = 350 μm and Ls = 8.
46 μm and Ws = 94 μm.
【００４３】本実施例での測定結果を図１１に示す。 ［実施例５］比較例２に第２実施形態に示した整合回路
１０ａを付加した構成とし、Ｌｗ＝３５０μｍ，Ｗｏ＝
６０μｍ，Ｌｏ＝６０μｍ，θ＝９０°とした。FIG. 11 shows the measurement results in this embodiment. [Example 5] A configuration in which the matching circuit 10a described in the second embodiment is added to Comparative Example 2 is used, and Lw = 350 μm and Wo =
60 μm, Lo = 60 μm, and θ = 90 °.
【００４４】本実施例での測定結果を図１２に示す。 ［実施例６］比較例２に第３実施形態に示した整合回路
１０ｂを付加した構成とし、Ｌｗ＝３５０μｍ，Ｌ１＝
８５μｍ，Ｌ２＝１３０μｍ，Ｗ１＝２４８μｍ，Ｗ２
＝８０μｍとした。FIG. 12 shows the measurement results in this embodiment. [Example 6] A configuration in which the matching circuit 10b shown in the third embodiment is added to Comparative Example 2 is used, and Lw = 350 μm and L1 =
85 μm, L2 = 130 μm, W1 = 248 μm, W2
= 80 μm.
【００４５】本実施例での測定結果を図１３に示す。 ［測定結果］テフロン基板，アルミナ基板のいずれを用
いた場合でも、整合回路を持たない比較例１，２より、
整合回路を備えた実施例１〜６の方が、いずれも使用周
波数帯（７０ＧＨｚ帯）での信号入力端での反射係数Ｓ
１１が大きく低下し、伝送特性が改善されていることが
わかる。FIG. 13 shows the measurement results in this embodiment. [Measurement results] Regardless of whether a Teflon substrate or an alumina substrate was used, Comparative Examples 1 and 2 having no matching circuit
In each of the first to sixth embodiments having the matching circuit, the reflection coefficient S at the signal input terminal in the operating frequency band (70 GHz band) is used.
11 is significantly reduced, indicating that the transmission characteristics are improved.
【図１】 第１実施形態のミリ波帯高周波装置の主要部
の構成を表す平面図及び断面図である。FIG. 1 is a plan view and a cross-sectional view illustrating a configuration of a main part of a millimeter-wave band high-frequency device according to a first embodiment.
【図２】 第２実施形態のミリ波帯高周波装置の主要部
の構成を表す平面図である。FIG. 2 is a plan view illustrating a configuration of a main part of a millimeter-wave band high-frequency device according to a second embodiment.
【図３】 第３実施形態のミリ波帯高周波装置の主要部
の構成を表す平面図である。FIG. 3 is a plan view illustrating a configuration of a main part of a millimeter-wave band high-frequency device according to a third embodiment.
【図４】 変換線路の変形例の構成を表す説明図であ
る。FIG. 4 is an explanatory diagram illustrating a configuration of a modified example of a conversion line.
【図５】 比較例の主要部の構成を表す平面図である。FIG. 5 is a plan view illustrating a configuration of a main part of a comparative example.
【図６】 比較例１の通過特性，反射特性の測定結果を
表すグラフである。FIG. 6 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of Comparative Example 1.
【図７】 比較例２の通過特性，反射特性の測定結果を
表すグラフである。FIG. 7 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of Comparative Example 2.
【図８】 実施例１の通過特性，反射特性の測定結果を
表すグラフである。FIG. 8 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of the first embodiment.
【図９】 実施例２の通過特性，反射特性の測定結果を
表すグラフである。FIG. 9 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of Example 2.
【図１０】 実施例３の通過特性，反射特性の測定結果
を表すグラフである。FIG. 10 is a graph illustrating measurement results of a transmission characteristic and a reflection characteristic of the third embodiment.
【図１１】 実施例４の通過特性，反射特性の測定結果
を表すグラフである。FIG. 11 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of Example 4.
【図１２】 実施例５の通過特性，反射特性の測定結果
を表すグラフである。FIG. 12 is a graph showing measurement results of a transmission characteristic and a reflection characteristic of Example 5.
【図１３】 実施例６の通過特性，反射特性の測定結果
を表すグラフである。FIG. 13 is a graph showing the measurement results of the transmission characteristics and the reflection characteristics of Example 6.
２，２ａ，２ｂ…ミリ波帯高周波装置、４…誘電体基
板、５…接地導体、６…伝送線路（マイクロストリップ
線路）、８…変換線路（グランドコプレナー線路）、８
ａ…信号線導体、８ｂ…接地導体、１０，１０ａ，１０
ｂ…整合回路、１２…接続用電極、１４…ビアホール、
Ｘ１…１段目線路部、Ｘ２…２段目線路部2, 2a, 2b: millimeter-wave band high-frequency device, 4: dielectric substrate, 5: ground conductor, 6: transmission line (microstrip line), 8: conversion line (ground coplanar line), 8
a: signal conductor, 8b: ground conductor, 10, 10a, 10
b: matching circuit, 12: connection electrode, 14: via hole,
X1: first-stage line portion; X2: second-stage line portion
Claims (7)
コプレナー線路からなる高周波部品をバンプ接続するた
めの接続用電極と、該接続用電極を介して入出力される
信号を伝送するためのマイクロストリップ線路からなる
伝送線路とが少なくも形成された誘電体基板を備えたミ
リ波帯高周波装置において、 コプレナー線路或いはグランドコプレナー線路からなる
変換線路を前記接続用電極から延設し、該変換線路を介
して前記伝送線路を前記接続用電極に接続すると共に、
前記伝送線路上に前記接続用電極でのバンプ接続による
不整合を補償するための整合回路を設けたことを特徴と
するミリ波帯高周波装置。1. A connection electrode for connecting a high-frequency component having a connection end formed of a coplanar line or a ground coplanar line to a bump, and a microstrip line for transmitting a signal input / output via the connection electrode. In a millimeter-wave band high-frequency device provided with a dielectric substrate formed with at least a transmission line consisting of: a conversion line comprising a coplanar line or a ground coplanar line extending from the connection electrode; Connecting the transmission line to the connection electrode with
A millimeter-wave band high-frequency device comprising a matching circuit on the transmission line for compensating for a mismatch due to bump connection at the connection electrode.
導体と同一面に形成された接地導体のパターンから前記
誘電体基板の基板厚の２倍以上離した位置に配置したこ
とを特徴とする請求項１記載のミリ波帯高周波装置。2. The method according to claim 1, wherein the matching circuit is arranged at a position separated from the ground conductor pattern formed on the same plane as the signal line conductor of the conversion line by at least twice the substrate thickness of the dielectric substrate. The millimeter-wave band high-frequency device according to claim 1.
特徴とする請求項１又は請求項２記載のミリ波帯高周波
装置。3. The millimeter-wave band high-frequency device according to claim 1, wherein the matching circuit comprises a stub.
徴とする請求項３記載のミリ波帯高周波装置。4. The high frequency device according to claim 3, wherein said stub is formed in a fan shape.
を１段或いは複数段に渡って変化させた構造を有するこ
とを特徴とする請求項１又は請求項２記載のミリ波帯高
周波装置。5. The millimeter-wave band high-frequency device according to claim 1, wherein the matching circuit has a structure in which the line width of the transmission line is changed over one or more stages. .
誘電率基板からなることを特徴とする請求項１ないし請
求項５いずれか記載のミリ波帯高周波装置。6. The millimeter wave band high frequency device according to claim 1, wherein said dielectric substrate is a low dielectric constant substrate having a dielectric constant of 3 or less.
ることを特徴とする請求項１ないし請求項５いずれか記
載のミリ波帯高周波装置。7. The high-frequency device according to claim 1, wherein said dielectric substrate is made of an alumina substrate.
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| JP2000225499A JP4221884B2 (en) | 2000-07-26 | 2000-07-26 | Millimeter-wave high-frequency equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000225499A JP4221884B2 (en) | 2000-07-26 | 2000-07-26 | Millimeter-wave high-frequency equipment |
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| Publication Number | Publication Date |
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| JP2002043811A true JP2002043811A (en) | 2002-02-08 |
| JP4221884B2 JP4221884B2 (en) | 2009-02-12 |
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|---|---|---|---|
| JP2000225499A Expired - Fee Related JP4221884B2 (en) | 2000-07-26 | 2000-07-26 | Millimeter-wave high-frequency equipment |
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| JP2008022235A (en) * | 2006-07-12 | 2008-01-31 | Mitsubishi Electric Corp | Microwave power amplifier |
| KR100846452B1 (en) * | 2006-12-05 | 2008-07-16 | 한국전자통신연구원 | The switch cell structure for millimeter wave band high isolation control circuits |
| JP2009124072A (en) * | 2007-11-19 | 2009-06-04 | Mitsubishi Electric Corp | High-frequency module |
| US7671697B2 (en) | 2006-12-05 | 2010-03-02 | Electronics And Telecommunications Research Institute | High-isolation switching device for millimeter-wave band control circuit |
| JP2010088046A (en) * | 2008-10-02 | 2010-04-15 | Sumitomo Metal Electronics Devices Inc | High-frequency transmission line substrate |
| JP2011182039A (en) * | 2010-02-26 | 2011-09-15 | Sumitomo Metal Electronics Devices Inc | Transmission line board for high frequency |
| KR101120043B1 (en) * | 2009-12-29 | 2012-03-22 | 이엠와이즈 통신(주) | Microstrip line-suspended stripline transition structure and application module thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008022235A (en) * | 2006-07-12 | 2008-01-31 | Mitsubishi Electric Corp | Microwave power amplifier |
| KR100846452B1 (en) * | 2006-12-05 | 2008-07-16 | 한국전자통신연구원 | The switch cell structure for millimeter wave band high isolation control circuits |
| US7671697B2 (en) | 2006-12-05 | 2010-03-02 | Electronics And Telecommunications Research Institute | High-isolation switching device for millimeter-wave band control circuit |
| JP2009124072A (en) * | 2007-11-19 | 2009-06-04 | Mitsubishi Electric Corp | High-frequency module |
| JP2010088046A (en) * | 2008-10-02 | 2010-04-15 | Sumitomo Metal Electronics Devices Inc | High-frequency transmission line substrate |
| KR101120043B1 (en) * | 2009-12-29 | 2012-03-22 | 이엠와이즈 통신(주) | Microstrip line-suspended stripline transition structure and application module thereof |
| JP2011182039A (en) * | 2010-02-26 | 2011-09-15 | Sumitomo Metal Electronics Devices Inc | Transmission line board for high frequency |
| US9083313B2 (en) | 2011-03-03 | 2015-07-14 | Murata Manufacturing Co., Ltd. | Substrate, duplexer and substrate module |
| WO2013001705A1 (en) * | 2011-06-30 | 2013-01-03 | 株式会社日立製作所 | Printed circuit board transmission system |
| JP2014143543A (en) * | 2013-01-23 | 2014-08-07 | Japan Oclaro Inc | Optical module |
| WO2014199591A1 (en) * | 2013-06-11 | 2014-12-18 | パナソニックＩｐマネジメント株式会社 | Microwave circuit |
| WO2021251158A1 (en) * | 2020-06-11 | 2021-12-16 | 株式会社村田製作所 | Transmission line |
| JPWO2021251158A1 (en) * | 2020-06-11 | 2021-12-16 |
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