JP2002043656A - High-frequency diode oscillator and millimeter wave transmitter-receiver using the same - Google Patents
High-frequency diode oscillator and millimeter wave transmitter-receiver using the sameInfo
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- JP2002043656A JP2002043656A JP2000229406A JP2000229406A JP2002043656A JP 2002043656 A JP2002043656 A JP 2002043656A JP 2000229406 A JP2000229406 A JP 2000229406A JP 2000229406 A JP2000229406 A JP 2000229406A JP 2002043656 A JP2002043656 A JP 2002043656A
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- millimeter
- wave signal
- frequency
- conductor
- dielectric line
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ミリ波集積回路等
の高周波回路に組み込まれるガンダイオード発振器等の
高周波ダイオード発振器であって、発振周波数の調整機
能を有する非放射性誘電体線路型の高周波ダイオード発
振器およびそれを用いたミリ波送受信器に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency diode oscillator, such as a Gunn diode oscillator, incorporated in a high-frequency circuit such as a millimeter-wave integrated circuit, which has a function of adjusting the oscillation frequency. The present invention relates to an oscillator and a millimeter wave transceiver using the same.
【0002】[0002]
【従来の技術】従来のガンダイオード発振器を図5に示
す。同図において、1は一対の平行平板導体であり、そ
れらの間隔dをd≦λ/2とすることにより外部から誘
電体線路6へのノイズの侵入をなくしかつ外部への高周
波信号の放射をなくして信号を伝送させる、所謂非放射
性誘電体線路(NonRadiative Dielectric waveguide
で、以下、NRDガイドという)を構成する。なお、λ
は使用周波数において空気中を伝搬する電磁波(高周波
信号)の波長である。2. Description of the Related Art FIG. 5 shows a conventional Gunn diode oscillator. In FIG. 1, reference numeral 1 denotes a pair of parallel plate conductors. By setting the distance d between them as d ≦ λ / 2, noise intrusion from the outside into the dielectric line 6 is eliminated and radiation of high-frequency signals to the outside is prevented. A non-radiative dielectric waveguide that transmits signals without
Therefore, the following is referred to as an NRD guide). Note that λ
Is the wavelength of an electromagnetic wave (high-frequency signal) propagating in the air at the operating frequency.
【0003】また、2はガンダイオード素子を設置(マ
ウント)するための略直方体状の金属ブロック等の金属
部材、3はマイクロ波,ミリ波を発振する高周波ダイオ
ードの1種であるガンダイオード素子、4は金属部材2
の一側面に設置され、ガンダイオード素子3にバイアス
電圧を供給するとともに高周波信号の漏れを防ぐローパ
スフィルタとして機能するチョーク型バイアス供給線路
4aを形成した配線基板、5はチョーク型バイアス供給
線路4aとガンダイオード素子3の上部導体とを接続す
る金属箔リボン等の帯状導体、6はガンダイオード素子
3の近傍に配置され高周波信号を受信し外部へ伝搬させ
る誘電体線路である。なお、図5では、内部を透視する
ために平行平板導体1の上側を一部切り欠いている。ま
た、帯状導体5は金属部材2の表面から所定間隔をあけ
てチョーク型バイアス供給線路4aとガンダイオード素
子3との間に架け渡されている。Further, reference numeral 2 denotes a metal member such as a substantially rectangular parallelepiped metal block for mounting (mounting) a gun diode element, 3 denotes a gun diode element which is a kind of high-frequency diode that oscillates microwaves and millimeter waves, 4 is a metal member 2
Is provided on one side surface, and has a choke-type bias supply line 4a that supplies a bias voltage to the Gunn diode element 3 and functions as a low-pass filter that prevents leakage of high-frequency signals. A band-shaped conductor such as a metal foil ribbon connecting the upper conductor of the Gunn diode element 3 and a dielectric line 6 arranged near the Gunn diode element 3 to receive a high-frequency signal and propagate the signal to the outside. In FIG. 5, the upper part of the parallel plate conductor 1 is partially cut away for seeing through the inside. The strip-shaped conductor 5 is bridged between the choke-type bias supply line 4 a and the Gunn diode element 3 at a predetermined interval from the surface of the metal member 2.
【0004】そして、帯状導体5の主面に平行な主面を
有する略四角柱状の誘電体チップ7を帯状導体5に近接
配置して電磁結合させ、高周波信号の発振周波数を制御
可能とすることを本出願人は先に提案した(特願平11
−237318号)。また、この場合、チョーク型バイ
アス供給線路4aは、幅の広い線路の長さと幅の狭い線
路の長さとがそれぞれ略λ/4であるチョークを構成し
ており、帯状導体5の長さは略{(3/4)+n}λ
(nは0以上の整数)に設定され、チョーク型バイアス
供給線路4aと帯状導体5とで共振器を構成している。[0004] A substantially quadrangular prism-shaped dielectric chip 7 having a main surface parallel to the main surface of the band-shaped conductor 5 is disposed close to the band-shaped conductor 5 and electromagnetically coupled to enable control of the oscillation frequency of a high-frequency signal. The present applicant previously proposed (Japanese Patent Application No.
-237318). In this case, the choke-type bias supply line 4a forms a choke in which the length of the wide line and the length of the narrow line are each substantially λ / 4, and the length of the strip-shaped conductor 5 is approximately {(3/4) + n} λ
(N is an integer of 0 or more), and the choke-type bias supply line 4a and the strip conductor 5 constitute a resonator.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記ガ
ンダイオード発振器においては、高周波信号の発振周波
数を調整するために誘電体チップ7を帯状導体5に近接
配置させていたが、誘電体チップ7の位置調整による発
振周波数の制御は困難であり、再現性良く発振周波数を
微調整することは難しかった。また、誘電体チップ7を
手動により位置調整し易いように大型化しようとする
と、ガンダイオード発振器全体が大型化し、小型、軽量
化ができなくなるという問題点があった。However, in the Gunn diode oscillator, the dielectric chip 7 is arranged close to the strip conductor 5 in order to adjust the oscillation frequency of the high frequency signal. It is difficult to control the oscillation frequency by adjustment, and it is difficult to finely adjust the oscillation frequency with good reproducibility. Further, if the size of the dielectric chip 7 is increased so that the position can be easily adjusted manually, there is a problem that the entire Gunn diode oscillator becomes large, and the size and weight cannot be reduced.
【0006】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的は、高周波ダイオード発振器
の発振周波数の微調整を再現性良く可能とし、また発振
周波数の調整量を変化させることが可能なものとするこ
とである。Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to enable fine adjustment of the oscillation frequency of a high-frequency diode oscillator with good reproducibility and to change the adjustment amount of the oscillation frequency. Is possible.
【0007】[0007]
【課題を解決するための手段】本発明の高周波ダイオー
ド発振器は、高周波信号の波長λの2分の1以下の間隔
で配置した平行平板導体間に金属部材を設置し、該金属
部材に、高周波信号を発振する高周波ダイオードと、幅
の広い線路および幅の狭い線路が交互に形成されたチョ
ーク型バイアス供給線路と、前記高周波ダイオードおよ
び前記チョーク型バイアス供給線路の間に架け渡されて
直線状に接続する帯状導体とを設けるとともに、前記平
行平板導体間の前記高周波ダイオードの近傍に前記高周
波信号を受信し伝搬させる誘電体線路を設けて成る高周
波ダイオード発振器において、前記チョーク型バイアス
供給線路の幅の広い線路および幅の狭い線路の長さをそ
れぞれ略λ/4、前記帯状導体の長さを略{(3/4)
+n}λ(nは0以上の整数)とするとともに、前記平
行平板導体間側の少なくとも一方の面に前記金属部材の
帯状導体部前方の部位から前記平行平板導体の一辺にか
けて前記帯状導体に略平行な溝が形成され、該溝に沿っ
て移動するように前記溝に嵌入された平板導体が設けら
れ、かつ前記平板導体上に前記帯状導体の主面と対向す
る主面を有する略三角柱状の誘電体チップが前記帯状導
体と電磁結合するように近接して立設されていることを
特徴とする。According to the high frequency diode oscillator of the present invention, a metal member is provided between parallel plate conductors arranged at an interval of one half or less of a wavelength λ of a high frequency signal. A high-frequency diode that oscillates a signal, a choke-type bias supply line in which a wide line and a narrow line are alternately formed, and is linearly bridged between the high-frequency diode and the choke-type bias supply line. A high frequency diode oscillator comprising a dielectric line for receiving and propagating the high frequency signal in the vicinity of the high frequency diode between the parallel plate conductors, the width of the choke-type bias supply line. The length of the wide line and the narrow line is approximately λ / 4, and the length of the strip conductor is approximately {(3/4)
+ N} λ (n is an integer of 0 or more), and the band-shaped conductor is formed on at least one surface between the parallel-plate conductors from a portion in front of the band-shaped conductor portion of the metal member to one side of the parallel-plate conductor. A parallel groove is formed, a flat conductor fitted in the groove so as to move along the groove is provided, and a substantially triangular prism having a main surface facing the main surface of the band-shaped conductor on the flat conductor. Wherein the dielectric chip is erected closely so as to be electromagnetically coupled with the strip conductor.
【0008】本発明は、このような構成により、チョー
ク型バイアス供給線路と帯状導体とが高周波ダイオード
の発振周波数を決定する共振器として機能し、前記帯状
導体の主面と対向する主面を有する略三角柱状の誘電体
チップを、移動(スライド)可能な平板導体上に配置し
て、帯状導体に対向する誘電体チップの主面の対向部の
対向面積、厚さおよび体積を容易かつ再現性良く微調整
可能とすることで、帯状導体を伝搬する高周波信号の波
長を微調整できる。その結果、共振器の実質的な共振器
長を微妙に調整でき、従って発振周波数を再現性良く微
調整できるという作用効果を有する。According to the present invention, with such a configuration, the choke-type bias supply line and the band-shaped conductor function as a resonator that determines the oscillation frequency of the high-frequency diode, and have a main surface facing the main surface of the band-shaped conductor. An approximately triangular prism-shaped dielectric chip is placed on a movable (slidable) flat conductor, and the opposing area, thickness, and volume of the opposing portion of the main surface of the dielectric chip opposing the strip conductor can be easily and reproducibly. By making the fine adjustment possible, the wavelength of the high-frequency signal propagating through the strip conductor can be finely adjusted. As a result, there is an effect that the substantial resonator length of the resonator can be finely adjusted, so that the oscillation frequency can be finely adjusted with good reproducibility.
【0009】本発明において、好ましくは、前記誘電体
チップは、頂角が60°未満の略ニ等辺三角形から成る
底面を有しており、前記ニ等辺三角形の底辺が前記平行
平板導体の前記一辺側に向くように立設されていること
を特徴とする。In the present invention, preferably, the dielectric chip has a bottom surface formed of a substantially isosceles triangle having a vertex angle of less than 60 °, and the base of the isosceles triangle is the one side of the parallel plate conductor. It is characterized by being erected so as to face the side.
【0010】上記の構成により、帯状導体の主面に対向
する誘電体チップの対向部分の厚さ等を、平板導体を移
動させることにより漸次変化させることができる。その
結果、発振周波数を漸次細かに変化させることができ
る。With the above configuration, the thickness and the like of the facing portion of the dielectric chip facing the main surface of the strip-shaped conductor can be gradually changed by moving the flat conductor. As a result, the oscillation frequency can be gradually and finely changed.
【0011】本発明のミリ波送受信器は、ミリ波信号の
波長の2分の1以下の間隔で配置した平行平板導体間
に、高周波ダイオード発振器が一端部に付設され、前記
高周波ダイオード発振器から出力されたミリ波信号を伝
搬させる第1の誘電体線路と、バイアス電圧印加方向が
前記ミリ波信号の電界方向に合致するように配置され、
前記バイアス電圧を周期的に制御することによって前記
ミリ波信号を周波数変調した送信用のミリ波信号として
出力する可変容量ダイオードと、前記第1の誘電体線路
に一端側が電磁結合するように近接配置されるかまたは
一端が接合されて、前記ミリ波信号の一部をミキサー側
へ伝搬させる第2の誘電体線路と、前記平行平板導体に
平行に配設されたフェライト板の周縁部に所定間隔で配
置されかつそれぞれ前記ミリ波信号の入出力端とされた
第1の接続部,第2の接続部および第3の接続部を有し、
一つの前記接続部から入力された前記ミリ波信号をフェ
ライト板の面内で時計回りまたは反時計回りに隣接する
他の接続部より出力させるサーキュレータであって、前
記第1の誘電体線路の前記ミリ波信号の出力端に前記第1
の接続部が接合されたサーキュレータと、該サーキュレ
ータの第2の接続部に接合され、前記ミリ波信号を伝搬
させるとともに先端部に送受信アンテナを有する第3の
誘電体線路と、前記送受信アンテナで受信され第3の誘
電体線路を伝搬して前記サーキュレータの第3の接続部
より出力した受信波をミキサー側へ伝搬させる第4の誘
電体線路と、前記第2の誘電体線路の中途と前記第4の
誘電体線路の中途とを近接させて電磁結合させるかまた
は接合させて成り、ミリ波信号の一部と受信波とを混合
させて中間周波信号を発生させるミキサー部と、を設け
たミリ波送受信器において、前記高周波ダイオード発振
器を上記本発明の高周波ダイオード発振器としたことを
特徴とする。In the millimeter-wave transceiver according to the present invention, a high-frequency diode oscillator is provided at one end between parallel plate conductors arranged at an interval of one half or less of the wavelength of the millimeter-wave signal. A first dielectric line for transmitting the millimeter-wave signal, and a bias voltage application direction are arranged so as to match the direction of the electric field of the millimeter-wave signal;
A variable-capacitance diode that outputs the frequency-modulated millimeter-wave signal as a millimeter-wave signal for transmission by periodically controlling the bias voltage, and is disposed close to the first dielectric line so that one end is electromagnetically coupled to the first dielectric line; Or one end thereof is joined, and a second dielectric line for transmitting a part of the millimeter wave signal to the mixer side, and a predetermined distance between a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor. Having a first connection portion, a second connection portion and a third connection portion which are respectively arranged as the input and output terminals of the millimeter wave signal,
A circulator for outputting the millimeter-wave signal input from one of the connection portions from another connection portion adjacent to the ferrite plate clockwise or counterclockwise in the plane of the ferrite plate, At the output end of the millimeter wave signal, the first
A circulator to which the connecting portion is joined, a third dielectric line joined to the second connecting portion of the circulator for transmitting the millimeter wave signal and having a transmitting and receiving antenna at a tip end, and receiving by the transmitting and receiving antenna A fourth dielectric line that propagates through the third dielectric line and propagates a reception wave output from a third connection portion of the circulator to the mixer side, and a middle portion of the second dielectric line and the fourth dielectric line. And a mixer section which is formed by electromagnetically coupling or joining the dielectric line in the vicinity of the dielectric line of No. 4 and which mixes a part of the millimeter wave signal and the received wave to generate an intermediate frequency signal. In the wave transceiver, the high-frequency diode oscillator is the high-frequency diode oscillator according to the present invention.
【0012】本発明のミリ波送受信器は、上記構成によ
り、ミリ波信号の周波数を微妙に調整可能であるととも
に、その伝送特性に優れ、その結果ミリ波レーダーの探
知距離を増大し得、また最適周波数で使用可能なものと
なる。According to the millimeter wave transceiver of the present invention, the frequency of the millimeter wave signal can be finely adjusted and the transmission characteristics thereof are excellent due to the above configuration. As a result, the detection distance of the millimeter wave radar can be increased. It can be used at the optimum frequency.
【0013】また、本発明のミリ波送受信器は、ミリ波
信号の波長の2分の1以下の間隔で配置した平行平板導
体間に、高周波ダイオード発振器が一端部に付設され、
前記高周波ダイオード発振器から出力されたミリ波信号
を伝搬させる第1の誘電体線路と、バイアス電圧印加方
向が前記ミリ波信号の電界方向に合致するように配置さ
れ、前記バイアス電圧を周期的に制御することによって
前記ミリ波信号を周波数変調した送信用のミリ波信号と
して出力する可変容量ダイオードと、前記第1の誘電体
線路に一端側が電磁結合するように近接配置されるかま
たは一端が接合されて、前記ミリ波信号の一部をミキサ
ー側へ伝搬させる第2の誘電体線路と、前記平行平板導
体に平行に配設されたフェライト板の周縁部に所定間隔
で配置されかつそれぞれ前記ミリ波信号の入出力端とさ
れた第1の接続部,第2の接続部および第3の接続部を有
し、一つの前記接続部から入力された前記ミリ波信号を
フェライト板の面内で時計回りまたは反時計回りに隣接
する他の接続部より出力させるサーキュレータであっ
て、前記第1の誘電体線路の前記ミリ波信号の出力端に
第1の接続部が接続されるサーキュレータと、該サーキ
ュレータの第2の接続部に接続され、前記ミリ波信号を
伝搬させるとともに先端部に送信アンテナを有する第3
の誘電体線路と、先端部に受信アンテナ、他端部にミキ
サーが各々設けられた第4の誘電体線路と、前記サーキ
ュレータの第3の接続部に接続され、前記送信アンテナ
で受信混入したミリ波信号を伝搬させるとともに先端部
に設けられた無反射終端部で前記ミリ波信号を減衰させ
る第5の誘電体線路と、前記第2の誘電体線路の中途と
前記第4の誘電体線路の中途とを近接させて電磁結合さ
せるかまたは接合させて成り、ミリ波信号の一部と受信
波とを混合させて中間周波信号を発生させるミキサー部
と、を設けたミリ波送受信器において、前記高周波ダイ
オード発振器を上記本発明の高周波ダイオード発振器と
したことを特徴とする。Further, in the millimeter wave transceiver according to the present invention, a high-frequency diode oscillator is provided at one end between parallel plate conductors arranged at an interval of one half or less of the wavelength of the millimeter wave signal.
A first dielectric line for transmitting a millimeter-wave signal output from the high-frequency diode oscillator, and a bias voltage application direction arranged so as to match an electric field direction of the millimeter-wave signal, and periodically controlling the bias voltage; And a variable capacitance diode that outputs the millimeter wave signal as a frequency-modulated millimeter wave signal for transmission, and one end of the variable capacitance diode that is electromagnetically coupled to the first dielectric line or one end thereof is joined. A second dielectric line for transmitting a part of the millimeter wave signal to the mixer side; and a ferrite plate arranged in parallel with the parallel plate conductor at a predetermined interval on a peripheral portion of the ferrite plate. It has a first connection part, a second connection part, and a third connection part which are signal input / output terminals, and the millimeter wave signal input from one of the connection parts is in-plane with a ferrite plate. A circulator for outputting clock signals or counterclockwise signals from another adjacent connection portion, wherein the first connection portion is connected to an output end of the millimeter wave signal of the first dielectric line; A third terminal connected to a second connection portion of the circulator for transmitting the millimeter wave signal and having a transmitting antenna at a tip end;
, A fourth dielectric line provided with a receiving antenna at the tip and a mixer at the other end, and a millimeter that is connected to the third connecting portion of the circulator and mixed by the transmitting antenna. A fifth dielectric line that propagates a wave signal and attenuates the millimeter-wave signal at a non-reflection terminal provided at the tip, and a middle of the second dielectric line and a fourth dielectric line. A millimeter-wave transceiver provided with a mixer unit that is formed by electromagnetic coupling or bonding in the vicinity of the middle and that mixes a part of the millimeter wave signal and the received wave to generate an intermediate frequency signal, The high-frequency diode oscillator is the high-frequency diode oscillator according to the present invention.
【0014】本発明のミリ波送受信器は、このような構
成により、ミリ波信号の周波数を微調整可能であるとと
もに、送信用のミリ波信号がサーキュレータを介してミ
キサーへ混入することがなく、その結果受信信号のノイ
ズが低減し探知距離が増大し、ミリ波信号の伝送特性に
優れ、ミリ波レーダーの探知距離をさらに増大し得るも
のとなる。According to the millimeter wave transceiver of the present invention, the frequency of the millimeter wave signal can be finely adjusted by such a configuration, and the millimeter wave signal for transmission is not mixed into the mixer via the circulator. As a result, the noise of the received signal is reduced and the detection distance is increased, the transmission characteristics of the millimeter wave signal are excellent, and the detection distance of the millimeter wave radar can be further increased.
【0015】上記ミリ波送受信器において、好ましく
は、前記第2の誘電体線路は、前記第3の誘電体線路に
一端側が電磁結合するように近接配置されるかまたは一
端が接合されて、前記ミリ波信号の一部をミキサー側へ
伝搬させるように配置されていることを特徴とする。こ
の構成においても、上記と同様の作用効果を奏する。In the above-mentioned millimeter wave transceiver, preferably, the second dielectric line is disposed close to the third dielectric line so that one end side is electromagnetically coupled to the third dielectric line, or one end is joined to the third dielectric line. It is characterized by being arranged so that a part of the millimeter wave signal is propagated to the mixer side. Also in this configuration, the same operation and effect as described above can be obtained.
【0016】また、上記ミリ波送受信器において、好ま
しくは、前記第1の誘電体線路の前記第2の誘電体線路
との信号分岐部と、前記サーキュレータとの間に、バイ
アス電圧印加方向が前記ミリ波信号の電界方向に合致す
るように配置され、前記バイアス電圧をON−OFFす
ることによって前記ミリ波信号をパルス変調し送信用の
ミリ波信号として出力するパルス変調用ダイオードを設
けたことを特徴とする。In the above-mentioned millimeter wave transceiver, preferably, a bias voltage application direction is set between a signal branch portion of the first dielectric line and the second dielectric line and the circulator. A pulse modulation diode that is disposed so as to match the direction of the electric field of the millimeter wave signal and that pulse-modulates the millimeter wave signal by turning on and off the bias voltage and outputs the resultant as a millimeter wave signal for transmission; Features.
【0017】上記の構成により、ミリ波信号をパルス化
して送受信するパルス方式のミリ波レーダーモジュール
等のミリ波送受信器を構成できるとともに、ミリ波信号
の周波数を微調整できるとともに、その伝送特性に優
れ、ミリ波レーダーの探知距離を増大し得るものとな
る。With the above configuration, a millimeter wave transceiver such as a pulse type millimeter wave radar module for pulsing a millimeter wave signal for transmission and reception can be configured, and the frequency of the millimeter wave signal can be fine-tuned and its transmission characteristics can be improved. It is possible to increase the detection range of the millimeter wave radar.
【0018】[0018]
【発明の実施の形態】本発明の高周波ダイオード発振器
について以下に説明する。図1〜図3は本発明のNRD
ガイド型の高周波ダイオード発振器を示し、これらの図
において、1はガンダイオード素子等の高周波ダイオー
ドが発振する高周波信号の空気中での波長λの2分の1
以下の間隔で配置した一対の平行平板導体、2はガンダ
イオード素子3を設置(マウント)するための略直方体
状の金属ブロック等の金属部材、3はマイクロ波,ミリ
波を発振する高周波ダイオードの1種であるガンダイオ
ード素子、4は金属部材2の一側面に設置され、ガンダ
イオード素子3にバイアス電圧を供給するとともに高周
波信号の漏れを防ぐローパスフィルタとして機能するチ
ョーク型バイアス供給線路4aを形成した配線基板、5
はチョーク型バイアス供給線路4aとガンダイオード素
子3の上部導体とを接続する金属箔リボン等の帯状導
体、6はガンダイオード素子3の近傍に配置され高周波
信号を受信し外部へ伝搬させる誘電体線路である。な
お、図1では、内部を透視するために平行平板導体1の
上側を一部切り欠いて描いている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency diode oscillator according to the present invention will be described below. 1 to 3 show NRD of the present invention.
1 shows a guide type high-frequency diode oscillator. In these figures, reference numeral 1 denotes a half of a wavelength λ in air of a high-frequency signal generated by a high-frequency diode such as a Gunn diode element.
A pair of parallel flat conductors arranged at the following intervals, 2 is a metal member such as a substantially rectangular parallelepiped metal block for mounting (mounting) the Gunn diode element 3, and 3 is a high frequency diode that oscillates microwaves and millimeter waves. One type of gun diode element 4 is provided on one side surface of the metal member 2 to form a choke-type bias supply line 4a that supplies a bias voltage to the gun diode element 3 and functions as a low-pass filter that prevents leakage of high-frequency signals. Wiring board, 5
Is a band-shaped conductor such as a metal foil ribbon connecting the choke-type bias supply line 4a and the upper conductor of the Gunn diode element 3, and 6 is a dielectric line arranged near the Gunn diode element 3 for receiving a high frequency signal and propagating to the outside. It is. In FIG. 1, the upper side of the parallel plate conductor 1 is partially cut away for seeing through the inside.
【0019】また本発明において、チョーク型バイアス
供給線路4aは、図2に示すように、幅の広い線路およ
び幅の狭い線路の長さがそれぞれ略λ/4の広狭線路か
ら成り、また帯状導体5の長さは略{(3/4)+n}
λ(nは0以上の整数)である。この帯状導体5の長さ
は略3λ/4〜略{(3/4)+3}λが良く、略
{(3/4)+3}λを超えると帯状導体5が長くな
り、撓み、捩じれ等が生じ易くなり、個々の高周波ダイ
オード発振器間で発振周波数等の特性のばらつきが大き
くなるとともに、種々の共振モードが発生して、所望の
発振周波数と異なる周波数の信号が発生するという問題
が生じる。より好ましくは、略3λ/4,略{(3/
4)+1}λである。In the present invention, as shown in FIG. 2, the choke-type bias supply line 4a is composed of a wide line and a narrow line each having a length of approximately λ / 4. The length of 5 is approximately {(3/4) + n}
λ (n is an integer of 0 or more). The length of the band-shaped conductor 5 is preferably approximately 3λ / 4 to approximately {(3/4) +3} λ, and if it exceeds approximately {(3/4) +3} λ, the length of the band-shaped conductor 5 becomes longer, and the conductor 5 is bent, twisted, or the like. And the variation in characteristics such as the oscillation frequency among the individual high-frequency diode oscillators increases, and various resonance modes occur to generate a signal having a frequency different from the desired oscillation frequency. More preferably, approximately 3λ / 4, approximately {(3 /
4) +1} λ.
【0020】また、略{(3/4)+n}λとしたの
は、{(3/4)+n}λから多少ずれていても共振は
可能だからである。例えば、帯状導体5を{(3/4)
+n}λよりも10〜20%程度長く形成しても良く、
その場合、帯状導体5の接するチョーク型バイアス供給
線路4aの1パターン目の長さλ/4のうち一部が共振
に寄与すると考えられるからである。従って、帯状導体
5の長さは{(3/4)+n}λ±20%程度の範囲内
で変化させることができる。Further, the reason why ({(3) + n} λ) is set is that resonance is possible even if it is slightly deviated from {(/) + n} λ. For example, the band-shaped conductor 5 is changed to {(3/4)
It may be formed about 10 to 20% longer than + n} λ,
In that case, it is considered that part of the length λ / 4 of the first pattern of the choke-type bias supply line 4a in contact with the strip conductor 5 contributes to resonance. Therefore, the length of the strip-shaped conductor 5 can be changed within a range of about {(3/4) + n} λ ± 20%.
【0021】これらチョーク型バイアス供給線路4aお
よび帯状導体5の材料は、Cu,Al,Au,Ag,
W,Ti,Ni,Cr,Pd,Pt等から成り、特にC
u,Agが、電気伝導度が良好であり、損失が小さく、
発振出力が大きくなるといった点で好ましい。The materials of the choke-type bias supply line 4a and the strip-shaped conductor 5 are Cu, Al, Au, Ag,
W, Ti, Ni, Cr, Pd, Pt, etc.
u and Ag have good electric conductivity, small loss,
This is preferable in that the oscillation output increases.
【0022】また、帯状導体5は金属部材2の表面から
所定間隔をあけて金属部材2と電磁結合しており、チョ
ーク型バイアス供給線路4aとガンダイオード素子3間
に架け渡されている。即ち、帯状導体5の一端はチョー
ク型バイアス供給線路4aの一端に半田付け等により接
続され、帯状導体5の他端はガンダイオード素子3の上
部導体に半田付け等により接続されており、帯状導体5
の接続部を除く中途部分は宙に浮いた状態となってい
る。The strip conductor 5 is electromagnetically coupled to the metal member 2 at a predetermined distance from the surface of the metal member 2, and is bridged between the choke type bias supply line 4 a and the Gunn diode element 3. That is, one end of the strip-shaped conductor 5 is connected to one end of the choke-type bias supply line 4a by soldering or the like, and the other end of the strip-shaped conductor 5 is connected to the upper conductor of the gun diode element 3 by soldering or the like. 5
The middle part except for the connection part is floating in the air.
【0023】そして、金属部材2は、ガンダイオード素
子3の電気的な接地(アース)を兼ねているため金属導
体であれば良く、その材料は金属(合金を含む)導体で
あれば特に限定するものではなく、真鍮(黄銅:Cu−
Zn合金),Al,Cu,SUS(ステンレススチー
ル),Ag,Au,Pt等から成る。また金属部材2
は、全体が金属から成る金属ブロック、セラミックスや
プラスチック等の絶縁基体の表面全体または部分的に金
属メッキしたもの、絶縁基体の表面全体または部分的に
導電性樹脂材料等をコートしたものであっても良い。Since the metal member 2 also serves as an electrical ground (earth) for the Gunn diode element 3, it may be a metal conductor, and the material is not particularly limited as long as it is a metal (including alloy) conductor. Not brass (brass: Cu-
(Zn alloy), Al, Cu, SUS (stainless steel), Ag, Au, Pt, etc. Metal member 2
Is a metal block made entirely of metal, an insulated substrate such as ceramics or plastic, which is entirely or partially metal-plated, or an insulated substrate entirely or partially coated with a conductive resin material or the like. Is also good.
【0024】また、誘電体線路6の材料は、コーディエ
ライト(2MgO・2Al2O3・5SiO2)セラミッ
クス(比誘電率4〜5),アルミナ(Al2O3)セラミ
ックス(比誘電率9〜10)等が好ましく、これらは高
周波帯域において低損失である。ガンダイオード素子3
と誘電体線路6との間隔は1.0mm程度以下が好まし
く、1.0mmを超えると損失を小さくして電磁的結合
が可能な最大離間幅を超える。The dielectric line 6 is made of cordierite (2MgO.2Al 2 O 3 .5SiO 2 ) ceramics (relative permittivity 4 to 5) and alumina (Al 2 O 3 ) ceramics (relative permittivity 9). To 10) are preferable, and these have low loss in a high frequency band. Gunn diode element 3
The distance between the dielectric line 6 and the dielectric line 6 is preferably about 1.0 mm or less. If the distance exceeds 1.0 mm, the loss is reduced to exceed the maximum separation width at which electromagnetic coupling is possible.
【0025】本発明の高周波ダイオード発振器につい
て、誘電体チップ9周辺の側面図を図3の(a)に、
(a)のA−A線における断面図を図3の(b)に示
す。同図に示すように、平行平板導体1,1間側の少な
くとも一方の面に金属部材2の帯状導体5部前方の部位
から平行平板導体1の一辺11(図1)にかけて帯状導
体5に略平行な溝8が形成される。その溝8に沿って移
動(スライド)するように溝8に嵌入された平板導体1
0が設けられ、かつ平板導体10上に帯状導体5の主面
と対向する主面を有する略三角柱状の誘電体チップ9が
帯状導体5と電磁結合するように近接して立設される。
そして、平板導体10は溝8に最も進入させた状態で、
その一端が平行平板導体1の一辺11から外部に突出し
ているのがよく、この場合、平行平板導体1の外部より
平板導体10を駆動して移動させて誘電体チップ9の位
置調整を容易に行うことができる。FIG. 3A is a side view showing the periphery of the dielectric chip 9 of the high-frequency diode oscillator according to the present invention.
FIG. 3B is a cross-sectional view taken along line AA of FIG. As shown in FIG. 1, the band-shaped conductor 5 is formed on at least one surface between the parallel plate-shaped conductors 1 and 1 from a portion in front of the band-shaped conductor 5 of the metal member 2 to one side 11 (FIG. 1) of the parallel plate-shaped conductor 1. Parallel grooves 8 are formed. The flat plate conductor 1 fitted in the groove 8 so as to move (slide) along the groove 8
0, and a substantially triangular prism-shaped dielectric chip 9 having a main surface facing the main surface of the strip conductor 5 is erected close to the strip conductor 5 so as to be electromagnetically coupled to the strip conductor 5.
Then, in a state where the flat conductor 10 is most advanced into the groove 8,
It is preferable that one end protrudes from one side 11 of the parallel plate conductor 1 to the outside. In this case, the position of the dielectric chip 9 can be easily adjusted by driving and moving the plate conductor 10 from the outside of the parallel plate conductor 1. It can be carried out.
【0026】平行平板導体1の溝8および平板導体10
は、図3に示すように、各平行平板導体1の内面に対向
させて一対設けてもよいし、一方の平行平板導体1にの
み設けてもよい。The groove 8 of the parallel plate conductor 1 and the plate conductor 10
As shown in FIG. 3, a pair may be provided facing the inner surface of each parallel plate conductor 1, or may be provided only on one parallel plate conductor 1.
【0027】また、平板導体10をステッピングモータ
等を用いたアクチュエーター等で移動駆動させ、誘電体
チップ9の位置を制御することにより、誘電体チップ9
の位置調整の再現性がより向上し、より細かい位置調整
が可能となる。The position of the dielectric chip 9 is controlled by moving and driving the flat conductor 10 by an actuator or the like using a stepping motor or the like.
The reproducibility of the position adjustment is further improved, and finer position adjustment becomes possible.
【0028】さらに、図4に本発明の誘電体チップ9の
具体的形状および変形例について示す。同図の(a)は
誘電体チップ9の底面および上面の形状を示すものであ
り、誘電体チップ9は、頂角9aの角度θが60°未満
の略二等辺三角形から成る形状、所謂楔状を有してお
り、この二等辺三角形の底辺9bが平行平板導体1の一
辺11側に向くように立設されることが好ましい。この
場合、誘電体チップ9を溝8に進入するようにB方向に
移動させた際に、帯状導体5と対向する主面9cのう
ち、対向部分は頂角9a部から始まり底辺9b部に至る
ように変化する。すると、誘電体チップ9の対向部分の
厚さ、対向面積および体積が徐々に大きくなるように調
整でき、逆の場合、誘電体チップ9の対向部分の厚さ、
対向面積および体積が徐々に小さくなるように調整でき
る。即ち、これらの対向部分の厚さ、対向面積および体
積を容易かつ再現性良く微調整可能となる。その結果、
帯状導体5を伝搬する高周波信号の波長が微妙に変化
し、共振器の実質的な共振器長を微妙に調整して発振周
波数を再現性良く微調整できることとなる。FIG. 4 shows a specific shape and a modification of the dielectric chip 9 of the present invention. FIG. 3A shows the shape of the bottom surface and the top surface of the dielectric chip 9. The dielectric chip 9 has a shape formed of a substantially isosceles triangle having an apex angle 9 a of less than 60 °, a so-called wedge shape. It is preferable that the base 9 b of the isosceles triangle is erected so as to face the side 11 of the parallel plate conductor 1. In this case, when the dielectric chip 9 is moved in the direction B so as to enter the groove 8, the facing portion of the main surface 9c facing the strip-shaped conductor 5 starts from the vertex 9a and reaches the base 9b. To change. Then, the thickness, the facing area, and the volume of the facing portion of the dielectric chip 9 can be adjusted so as to gradually increase, and in the opposite case, the thickness of the facing portion of the dielectric chip 9,
It can be adjusted so that the facing area and volume gradually become smaller. That is, the thickness, facing area and volume of these facing portions can be finely adjusted easily and with good reproducibility. as a result,
The wavelength of the high-frequency signal propagating through the band-shaped conductor 5 changes slightly, and the oscillation frequency can be finely adjusted with good reproducibility by finely adjusting the substantial resonator length of the resonator.
【0029】また、上記頂角9aの角度θが小さいと高
周波信号の波長の変化も小さく、角度θが大きいと高周
波信号の波長の変化も大きくなるものであり、角度θを
種々に変えたものを用いて広範囲の調整を行うことがで
きる。When the angle θ of the apex angle 9a is small, the change in the wavelength of the high-frequency signal is small, and when the angle θ is large, the change in the wavelength of the high-frequency signal is large. Can be used to make a wide range of adjustments.
【0030】また、誘電体チップ9の形状としては、
(b)に示すように、三角柱の少なくとも一主面が円弧
状の凹面とされた形状、(c)に示すように、三角柱の
頂角を成す一辺の中央から誘電体チップ9の中央部にか
けて凹んだ括れ部を有する形状等があり、周波数の変化
幅のコントロール等の目的に応じて選択が可能である。
例えば、(b)の形状の誘電体チップ9を用いた場合、
より細かい周波数の調整が可能である。The shape of the dielectric chip 9 is as follows.
As shown in (b), at least one main surface of the triangular prism is formed into an arc-shaped concave surface, and as shown in (c), from the center of one side forming the apex angle of the triangular prism to the center of the dielectric chip 9. There are shapes and the like having a concave constriction, which can be selected according to the purpose of controlling the width of change in frequency.
For example, when the dielectric chip 9 having the shape shown in FIG.
Finer frequency adjustment is possible.
【0031】さらには、この誘電体チップ9は、帯状導
体5に平行な方向に限らず、帯状導体5に平行な方向に
対して若干の角度をなして傾斜する方向に移動するよう
に、溝8を形成してもよい。Further, the dielectric chip 9 is not limited to the direction parallel to the band-shaped conductor 5, but is formed so as to move in a direction inclined at a slight angle with respect to the direction parallel to the band-shaped conductor 5. 8 may be formed.
【0032】この誘電体チップ9と帯状導体5との間隔
は0.1mm以上2mm以下であるのがよく、0.1m
m未満では、誘電体チップ9の誘電体損失が発振出力に
大きく影響し、2mm以上では、誘電体チップ9と帯状
導体5との電磁結合の度合いが小さく周波数の調整幅が
小さくなりすぎる。The distance between the dielectric chip 9 and the strip conductor 5 is preferably not less than 0.1 mm and not more than 2 mm.
If it is less than m, the dielectric loss of the dielectric chip 9 greatly affects the oscillation output. If it is 2 mm or more, the degree of electromagnetic coupling between the dielectric chip 9 and the strip conductor 5 is small, and the frequency adjustment width is too small.
【0033】誘電体チップ9の材料としては、コーディ
エライト(2MgO・2Al2O3・5SiO2)セラミ
ックス,アルミナ(Al2O3)セラミックス,ガラスエ
ポキシ樹脂等の誘電体から成るのがよく、これらは高周
波信号に対する誘電体損失が小さい。The dielectric chip 9 is preferably made of a dielectric material such as cordierite (2MgO.2Al 2 O 3 .5SiO 2 ) ceramics, alumina (Al 2 O 3 ) ceramics, glass epoxy resin, etc. These have a small dielectric loss for high frequency signals.
【0034】平板導体10の材料としては、Cu,A
l,Fe,SUS(ステンレススチール),Ag,A
u,Pt,Ti等の導体板、あるいはセラミックス,樹
脂等から成る絶縁板の表面にこれらの導体層を形成した
ものでもよい。特に、駆動による磨耗が少ないものとし
て、Tiから成るもの、またはFeやSUSから成る導
体板の表面にCu等を印刷したものが好ましい。The material of the flat conductor 10 is Cu, A
1, Fe, SUS (stainless steel), Ag, A
A conductor plate made of u, Pt, Ti, or the like, or an insulating plate made of ceramics, resin, or the like, in which these conductor layers are formed on the surface may be used. In particular, it is preferable to use a material made of Ti or a material in which Cu or the like is printed on the surface of a conductor plate made of Fe or SUS, as a material having little wear due to driving.
【0035】また、誘電体チップ9の比誘電率は2〜1
0が好ましく、2以下では周波数の調整幅が小さくなり
すぎ、10を超えると電磁場が誘電体チップ9に集中し
過ぎるため、誘電体チップ9の誘電体損失が大きく影響
し、発振出力の低下等の影響がでてくる。より好ましく
は、誘電体チップ9の比誘電率は2〜5がよい。The relative permittivity of the dielectric chip 9 is 2-1.
0 is preferable, and when it is 2 or less, the frequency adjustment width becomes too small, and when it exceeds 10, the electromagnetic field concentrates too much on the dielectric chip 9, so that the dielectric loss of the dielectric chip 9 greatly affects, and the oscillation output decreases. Influence comes out. More preferably, the relative permittivity of the dielectric chip 9 is preferably 2 to 5.
【0036】このように、平行平板導体1,1間側の少
なくとも一方の面に金属部材2の帯状導体5部前方の部
位から平行平板導体1の一辺11にかけて帯状導体5に
略平行な溝8が形成され、その溝8に沿って移動(スラ
イド)するように溝8に嵌入された平板導体10が設け
られ、かつ平板導体10上に帯状導体5の主面と対向す
る主面を有する略三角柱状の誘電体チップ9が帯状導体
5と電磁結合するように近接して立設された構成とし、
この構成において平板導体10を移動駆動することによ
り、誘電体チップ9の帯状導体5との対向部分の厚さ、
対向面積および体積を容易かつ再現性良く微調整するこ
とができる。その結果、帯状導体5を伝搬する高周波信
号の波長を調整することができ、チョーク型バイアス供
給線路4aと帯状導体5とから成る共振器の実質的な共
振器長を微妙に調整できる。例えば、帯状導体5の電気
的な共振器長を略{(3/4)+n}λよりも僅かに大
きくし、発振周波数を低くすることが可能となる。As described above, at least one surface between the parallel plate conductors 1 and 1 has a groove 8 substantially parallel to the band conductor 5 from the portion in front of the band conductor 5 of the metal member 2 to one side 11 of the parallel plate conductor 1. A flat conductor 10 fitted in the groove 8 is provided so as to move (slide) along the groove 8, and has a main surface on the flat conductor 10, the main surface facing the main surface of the strip-shaped conductor 5. A triangular prism-shaped dielectric chip 9 is provided upright so as to be electromagnetically coupled to the strip-shaped conductor 5;
In this configuration, by moving and driving the flat conductor 10, the thickness of the portion of the dielectric chip 9 facing the strip conductor 5,
The opposing area and volume can be finely adjusted easily and with good reproducibility. As a result, the wavelength of the high-frequency signal propagating through the strip conductor 5 can be adjusted, and the substantial resonator length of the resonator including the choke-type bias supply line 4a and the strip conductor 5 can be finely adjusted. For example, it is possible to reduce the oscillation frequency by making the electrical resonator length of the band-shaped conductor 5 slightly larger than approximately {(3/4) + n} λ.
【0037】本発明でいう高周波帯域は、数10〜数1
00GHz帯域のマイクロ波帯域およびミリ波帯域に相
当し、例えば30GHz以上、特に50GHz以上、更
には70GHz以上の高周波帯域が好適である。The high-frequency band referred to in the present invention is expressed by the following equation.
A high frequency band corresponding to the microwave band and the millimeter wave band of the 00 GHz band, for example, 30 GHz or more, particularly 50 GHz or more, and more preferably 70 GHz or more is suitable.
【0038】また、本発明の高周波ダイオードとして
は、インパット(impatt:impact ionisation avalan
che transit time)・ダイオード,トラパット(trap
att:trapped plasma avalanche triggered transi
t)・ダイオード,ガンダイオード等のマイクロ波ダイ
オードおよびミリ波ダイオードが好適に使用される。The high-frequency diode of the present invention includes an impatt (impact ionization avalan).
che transit time, diode, trap
att: trapped plasma avalanche triggered transi
t) Microwave diodes such as diodes and Gunn diodes and millimeter-wave diodes are preferably used.
【0039】本発明のNRDガイド用の平行平板導体1
は、高い電気伝導度および加工性等の点で、Cu,A
l,Fe,SUS(ステンレススチール),Ag,A
u,Pt等の導体板、あるいはセラミックス,樹脂等か
ら成る絶縁板の表面にこれらの導体層を形成したもので
もよい。Parallel plate conductor 1 for NRD guide of the present invention
Are Cu, A in terms of high electrical conductivity and workability.
1, Fe, SUS (stainless steel), Ag, A
A conductor plate made of u, Pt, or the like, or an insulating plate made of ceramic, resin, or the like, on which the conductor layers are formed may be used.
【0040】また、本発明のNRDガイド型の高周波ダ
イオード発振器は、無線LAN,自動車のミリ波レーダ
等に使用されるものであり、例えば自動車の周囲の障害
物および他の自動車に対しミリ波を照射し、反射波を元
のミリ波と合成して中間周波信号を得、この中間周波信
号を分析することにより障害物および他の自動車までの
距離、それらの移動速度等が測定できる。The NRD guide type high-frequency diode oscillator of the present invention is used for a wireless LAN, a millimeter-wave radar of an automobile, etc., and applies, for example, millimeter waves to obstacles around the automobile and other automobiles. Irradiation, the reflected wave is combined with the original millimeter wave to obtain an intermediate frequency signal, and by analyzing the intermediate frequency signal, the distance to obstacles and other automobiles, their moving speed, and the like can be measured.
【0041】かくして、本発明は、チョーク型バイアス
供給線路4aと帯状導体5とが高周波ダイオードの発振
周波数を決定する共振器として機能し、また帯状導体5
を伝搬する高周波信号の波長を調整することができ、チ
ョーク型バイアス供給線路4aと帯状導体5とから成る
共振器の実質的な共振器長を微妙に調整できる。Thus, according to the present invention, the choke-type bias supply line 4a and the strip conductor 5 function as a resonator for determining the oscillation frequency of the high-frequency diode, and the strip conductor 5
Can be adjusted, and the substantial resonator length of the resonator including the choke-type bias supply line 4a and the band-shaped conductor 5 can be finely adjusted.
【0042】尚、本発明は上記実施形態に限定されるも
のではなく、本発明の要旨を逸脱しない範囲内で種々の
変更を行っても何等差し支えない。It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention.
【0043】本発明のミリ波送受信器について、以下に
説明する。図6~8は本発明のミリ波送受信器について
示すものであり、図6は送信アンテナと受信アンテナが
一体化されたものの平面図、図7は送信アンテナと受信
アンテナが独立したものの平面図、図8はスイッチ用の
PINダイオードやショットキーバリアダイオードを設
けた配線基板の斜視図である。The following describes the millimeter wave transceiver of the present invention. 6 to 8 show the millimeter-wave transceiver of the present invention, FIG. 6 is a plan view of an integrated transmitting antenna and receiving antenna, FIG. 7 is a plan view of an independent transmitting antenna and receiving antenna, FIG. 8 is a perspective view of a wiring board provided with a switch PIN diode and a Schottky barrier diode.
【0044】図6において、51は本発明の一方の平行
平板導体(他方は省略する)、52は第1の誘電体線路
53の一端に設けられた電圧制御型のミリ波信号発振
部、即ち本発明の高周波ダイオード発振器を具備してお
り、さらに、バイアス電圧印加方向が高周波信号の電界
方向に合致するように、第1の誘電体線路53の高周波
ダイオード近傍に配置された可変容量ダイオードのバイ
アス電圧を周期的に制御して、三角波,正弦波等とする
ことにより、周波数変調した送信用のミリ波信号として
出力する。In FIG. 6, reference numeral 51 denotes one parallel plate conductor of the present invention (the other is omitted); and 52, a voltage-controlled millimeter-wave signal oscillating section provided at one end of a first dielectric line 53, that is, The high-frequency diode oscillator according to the present invention is provided, and the bias of the variable capacitance diode disposed near the high-frequency diode of the first dielectric line 53 is adjusted so that the bias voltage application direction matches the electric field direction of the high-frequency signal. The voltage is periodically controlled to be a triangular wave, a sine wave, or the like, and output as a frequency-modulated transmission millimeter wave signal.
【0045】53は、高周波ダイオードから出力された
高周波信号が変調されたミリ波信号を伝搬させる第1の
誘電体線路、54は、第1,第3,第4の誘電体線路に
それぞれ結合される第1,第2,第3の接続部(図示せ
ず)を有する、フェライト円板等から成るサーキュレー
タ、55は、サーキュレータ54の第2の接続部に接続
され、ミリ波信号を伝搬させるとともに先端部に送受信
アンテナ56を有する第3の誘電体線路、56は、第3
の誘電体線路55の先端部に金属導波管を介して接続さ
れる送受信アンテナである。Reference numeral 53 denotes a first dielectric line for transmitting a millimeter-wave signal obtained by modulating a high-frequency signal output from a high-frequency diode, and 54 is coupled to the first, third, and fourth dielectric lines, respectively. A circulator 55 made of a ferrite disk or the like, having first, second, and third connection portions (not shown), is connected to the second connection portion of the circulator 54, and propagates a millimeter wave signal. A third dielectric line having a transmitting / receiving antenna 56 at the tip,
The transmission / reception antenna is connected to the distal end of the dielectric line 55 via a metal waveguide.
【0046】また57は、送受信アンテナ56で受信さ
れ第3の誘電体線路55を伝搬してサーキュレータ54
の第3の接続部より出力した受信波をミキサー59側へ
伝搬させる第4の誘電体線路、58は、第1の誘電体線
路53に一端側が電磁結合するように近接配置されるか
または第1の誘電体線路53に一端が接合されて、ミリ
波信号の一部をミキサー59側へ伝搬させる第2の誘電
体線路、58aは、第2の誘電体線路58のミキサー5
9と反対側の一端部に設けられた無反射終端部(ターミ
ネータ)である。また、図中M1は、第2の誘電体線路
58の中途と第4の誘電体線路57の中途とを近接させ
て電磁結合させるかまたは接合させることにより、ミリ
波信号の一部と受信波を混合させて中間周波信号を発生
させるミキサー部である。Reference numeral 57 denotes a circulator 54 which is received by the transmitting / receiving antenna 56 and propagates through the third dielectric line 55.
The fourth dielectric line 58 for propagating the reception wave output from the third connection portion to the mixer 59 side is disposed close to the first dielectric line 53 such that one end side is electromagnetically coupled to the first dielectric line 53, or The second dielectric line 58 a having one end joined to the first dielectric line 53 and transmitting a part of the millimeter wave signal to the mixer 59 side is a mixer 5 of the second dielectric line 58.
9 is a non-reflection terminal (terminator) provided at one end opposite to the end 9. In the figure, M1 indicates a part of the millimeter wave signal and the reception wave by making the middle of the second dielectric line 58 and the middle of the fourth dielectric line 57 close to each other and electromagnetically coupled or joined. Are mixed to generate an intermediate frequency signal.
【0047】本発明のサーキュレータ54は、平行平板
導体51,51間に平行に配設された一対のフェライト
円板の周縁部に所定間隔、例えばフェライト円板の中心
点に関して角度で120°間隔で配置され、かつそれぞ
れミリ波信号の入出力端とされた第1の接続部,第2の
接続部および第3の接続部を有し、一つの接続部から入
力されたミリ波信号をフェライト板の面内で時計回りま
たは反時計回りに隣接する他の接続部より出力させるも
のである。また、平行平板導体51の外側主面のフェラ
イト円板に相当する部位には、フェライト円板を伝搬す
る電磁波の波面を回転させるための磁石が、磁力線がフ
ェライト円板に対し略垂直方向(略上下方向)に通過す
るように設けられる。The circulator 54 of the present invention is arranged at predetermined intervals around the periphery of a pair of ferrite disks disposed in parallel between the parallel plate conductors 51, 51, for example, at 120 ° intervals with respect to the center point of the ferrite disk. A first connecting portion, a second connecting portion, and a third connecting portion which are arranged and are respectively input / output terminals of the millimeter wave signal; In the clockwise or counterclockwise direction in another plane. Further, a magnet for rotating the wavefront of the electromagnetic wave propagating through the ferrite disk is provided in a portion corresponding to the ferrite disk on the outer main surface of the parallel plate conductor 51. (Up-down direction).
【0048】本発明では、第1の誘電体線路53と第2
の誘電体線路58とを接合する場合、これらの誘電体線
路53,58のうちいずれか一方の接合部を円弧状とな
し、その円弧状部の曲率半径rを高周波信号の波長λ以
上とするのがよい。これにより、高周波信号を損失を小
さくして均等の出力で分岐させることができる。また、
第2の誘電体線路58と第4の誘電体線路57とを接合
する場合、上記と同様に、これらの誘電体線路58,5
7のうちいずれか一方の接合部を円弧状となし、その円
弧状部の曲率半径rを高周波信号の波長λ以上とするの
がよい。In the present invention, the first dielectric line 53 and the second
When the dielectric line 58 is joined, one of these dielectric lines 53 and 58 is formed in an arc shape, and the radius of curvature r of the arc portion is set to be equal to or longer than the wavelength λ of the high-frequency signal. Is good. As a result, the loss of the high-frequency signal can be reduced and the high-frequency signal can be branched with an equal output. Also,
When the second dielectric line 58 and the fourth dielectric line 57 are joined, similarly to the above, these dielectric lines 58, 5
Preferably, one of the joints 7 is formed in an arc shape, and the radius of curvature r of the arc portion is set to be equal to or longer than the wavelength λ of the high-frequency signal.
【0049】そして、これらの各種部品は、ミリ波信号
の波長の2分の1以下の間隔で配置した平行平板導体間
に設けられている。These various components are provided between the parallel plate conductors arranged at an interval of one half or less of the wavelength of the millimeter wave signal.
【0050】図6のものにおいて、第1の誘電体線路5
3の中途にスイッチを設け、それをON−OFFするこ
とでパルス変調制御することもできる。例えば、図8に
示すように、配線基板38の一主面に第2のチョーク型
バイアス供給線路40を形成し、その中途に半田実装さ
れたビームリードタイプのPINダイオードやショット
キーバリアダイオードを設けたスイッチである。この配
線基板38を、第1の誘電体線路53の第2の誘電体線
路58との信号分岐部とサーキュレータ54との間に、
PINダイオードやショットキーバリアダイオードのパ
ルス変調用ダイオードのバイアス電圧印加方向がLSM
モードの高周波信号の電界方向に合致するように配置
し、第1の誘電体線路53に介在させるものである。ま
た、第1の誘電体線路53にもう一つのサーキュレータ
を介在させ、その第1,第3の接続部に第1の誘電体線
路53を接続し、第2の接続部に他の誘電体線路を接続
し、その誘電体線路の先端部の端面に、図8のようなシ
ョットキーバリアダイオードを設けたスイッチを設置し
てもよい。In FIG. 6, the first dielectric line 5
By providing a switch in the middle of 3 and turning it on and off, pulse modulation control can also be performed. For example, as shown in FIG. 8, a second choke-type bias supply line 40 is formed on one main surface of a wiring board 38, and a beam lead type PIN diode or a Schottky barrier diode mounted by soldering is provided in the middle thereof. Switch. This wiring board 38 is placed between the circulator 54 and the signal branching portion of the first dielectric line 53 with the second dielectric line 58.
The bias voltage application direction of the pulse modulation diode such as PIN diode or Schottky barrier diode is LSM
They are arranged so as to match the direction of the electric field of the high-frequency signal of the mode, and are interposed in the first dielectric line 53. Further, another circulator is interposed in the first dielectric line 53, the first dielectric line 53 is connected to the first and third connection portions, and another dielectric line is connected to the second connection portion. And a switch provided with a Schottky barrier diode as shown in FIG. 8 may be provided on the end face of the tip of the dielectric line.
【0051】また、本発明のミリ波送受信器の他の実施
形態として、送信アンテナと受信アンテナを独立させた
図7のタイプがある。同図において、61は本発明の一
方の平行平板導体(他方は省略する)、62は第1の誘
電体線路63の一端に設けられた電圧制御型のミリ波信
号発振部、即ち本発明の高周波ダイオード発振器を具備
するものであり、さらに、バイアス電圧印加方向が高周
波信号の電界方向に合致するように第1の誘電体線路6
3の高周波ダイオード近傍に配置された可変容量ダイオ
ードのバイアス電圧を周期的に制御して、三角波,正弦
波等とすることにより、周波数変調した送信用のミリ波
信号として出力する。Further, as another embodiment of the millimeter wave transceiver of the present invention, there is a type shown in FIG. 7 in which a transmitting antenna and a receiving antenna are made independent. In the figure, reference numeral 61 denotes one parallel plate conductor of the present invention (the other is omitted), and 62 denotes a voltage-controlled millimeter-wave signal oscillating unit provided at one end of the first dielectric line 63, ie, the present invention. A high-frequency diode oscillator, and a first dielectric line 6 such that a bias voltage application direction matches an electric field direction of a high-frequency signal.
By periodically controlling the bias voltage of the variable capacitance diode disposed in the vicinity of the high frequency diode No. 3 to make it a triangular wave, a sine wave or the like, it outputs a frequency-modulated millimeter wave signal for transmission.
【0052】63は、高周波ダイオードから出力された
高周波信号が変調されたミリ波信号を伝搬させる第1の
誘電体線路、64は、第1,第3,第5の誘電体線路6
3,65,67にそれぞれ接続される第1,第2,第3
の接続部(図示せず)を有する、フェライト円板64a
等から成るサーキュレータ、65は、サーキュレータ6
4の第2の接続部に接続され、ミリ波信号を伝搬させる
とともに先端部に送信アンテナ66を有する第3の誘電
体線路、66は、第3の誘電体線路65の先端部に金属
導波管を介して接続される送信アンテナ、67は、サー
キュレータ64の第3の接続部に接続され、送信用のミ
リ波信号を減衰させる無反射終端部67aが先端に設け
られた第5の誘電体線路である。Reference numeral 63 denotes a first dielectric line for transmitting a millimeter wave signal obtained by modulating a high frequency signal output from the high frequency diode, and 64 denotes a first, third, and fifth dielectric line 6.
3, 65, 67 respectively connected to the first, second, third
Ferrite disk 64a having a connection portion (not shown)
A circulator 65 comprising a circulator 6
A third dielectric line 66 connected to the second connection portion 4 for transmitting a millimeter wave signal and having a transmitting antenna 66 at the distal end thereof is provided with a metal waveguide at the distal end of the third dielectric line 65. A transmitting antenna 67 connected via a tube is connected to a third connecting portion of the circulator 64, and a fifth dielectric member provided with a non-reflection terminating portion 67a at an end thereof for attenuating a millimeter wave signal for transmission. It is a track.
【0053】また68は、第1の誘電体線路63に一端
側が電磁結合するように近接配置されるかまたは第1の
誘電体線路63に一端が接合されて、ミリ波信号の一部
をミキサー71側へ伝搬させる第2の誘電体線路、68
aは、第2の誘電体線路68のミキサー71と反対側の
一端部に設けられた無反射終端部、69は、受信アンテ
ナ70で受信された受信波をミキサー71側へ伝搬させ
る第4の誘電体線路である。また、図中M2は、第2の
誘電体線路68の中途と第4の誘電体線路69の中途と
を近接させて電磁結合させるかまたは接合させることに
より、ミリ波信号の一部と受信波とを混合させて中間周
波信号を発生させるミキサー部である。Reference numeral 68 denotes one end of the first dielectric line 63 which is disposed close to the first dielectric line 63 so as to be electromagnetically coupled to the first dielectric line 63 or one end of which is joined to the first dielectric line 63 to mix a part of the millimeter wave signal. The second dielectric line propagating to the 71 side, 68
a is a non-reflection terminal provided at one end of the second dielectric line 68 on the side opposite to the mixer 71; 69 is a fourth for transmitting a reception wave received by the reception antenna 70 to the mixer 71 side. This is a dielectric line. In the figure, M2 indicates a part of the millimeter wave signal and the reception wave by making the middle of the second dielectric line 68 and the middle of the fourth dielectric line 69 close to each other and electromagnetically coupled or joined. And a mixer unit for generating an intermediate frequency signal by mixing
【0054】本発明では、第1の誘電体線路63と第2
の誘電体線路68とを接合する場合、これらの誘電体線
路63,68のうちいずれか一方の接合部を円弧状とな
し、その円弧状部の曲率半径rを高周波信号の波長λ以
上とするのがよい。これにより、高周波信号を損失を小
さくして均等の出力で分岐させることができる。また、
第2の誘電体線路68と第4の誘電体線路69とを接合
する場合、上記と同様に、これらの誘電体線路68,6
9のうちいずれか一方の接合部を円弧状となし、その円
弧状部の曲率半径rを高周波信号の波長λ以上とするの
がよい。In the present invention, the first dielectric line 63 and the second
In the case where the dielectric line 68 is joined, one of these dielectric lines 63 and 68 is formed into an arc shape, and the radius of curvature r of the arc portion is set to be equal to or longer than the wavelength λ of the high-frequency signal. Is good. As a result, the loss of the high-frequency signal can be reduced and the high-frequency signal can be branched with an equal output. Also,
When joining the second dielectric line 68 and the fourth dielectric line 69, as in the above, these dielectric lines 68, 6
Preferably, one of the joints 9 is formed in an arc shape, and the radius of curvature r of the arc portion is set to be equal to or longer than the wavelength λ of the high-frequency signal.
【0055】そして、これらの各種部品は、ミリ波信号
の波長の2分の1以下の間隔で配置した平行平板導体間
に設けられる。These various components are provided between parallel plate conductors arranged at an interval of one half or less of the wavelength of the millimeter wave signal.
【0056】図7のものにおいて、サーキュレータ64
をなくし、第1の誘電体線路63の先端部に送信アンテ
ナ66を接続した構成とすることもできる。この場合、
小型化されたものとなるが、受信波の一部がミリ波信号
発振部62に混入しノイズ等の原因となり易いため、図
7のタイプが好ましい。In FIG. 7, the circulator 64
, And the transmission antenna 66 may be connected to the tip of the first dielectric line 63. in this case,
Although the size is reduced, a part of the received wave is likely to be mixed into the millimeter-wave signal oscillating unit 62 and cause noise or the like. Therefore, the type shown in FIG. 7 is preferable.
【0057】この図7のものにおいて、第1の誘電体線
路63の中途に、図8に示したものと同様に構成したス
イッチを設け、それをON−OFFすることでパルス変
調制御することもできる。例えば、図8のように、配線
基板38の一主面に第2のチョーク型バイアス供給線路
40を形成し、その中途に半田実装されたビームリード
タイプのPINダイオードやショットキーバリアダイオ
ードを設けたスイッチである。この配線基板38を、第
1の誘電体線路63の第2の誘電体線路68との信号分
岐部と、サーキュレータ64との間に、PINダイオー
ドやショットキーバリアダイオードのバイアス電圧印加
方向がLSMモードの高周波信号の電界方向に合致する
ように配置し、第1の誘電体線路53に介在させるもの
である。In the configuration shown in FIG. 7, a switch having the same configuration as that shown in FIG. 8 is provided in the middle of the first dielectric line 63, and pulse modulation can be controlled by turning it on and off. it can. For example, as shown in FIG. 8, a second choke type bias supply line 40 is formed on one main surface of the wiring board 38, and a beam lead type PIN diode or a Schottky barrier diode which is mounted by soldering is provided in the middle thereof. Switch. This wiring board 38 is connected between the signal branching portion of the first dielectric line 63 and the second dielectric line 68 and the circulator 64 and the bias voltage application direction of the PIN diode or the Schottky barrier diode is set to the LSM mode. Are arranged so as to match the direction of the electric field of the high-frequency signal, and are interposed in the first dielectric line 53.
【0058】また、第1の誘電体線路63にもう一つの
サーキュレータを介在させ、その第1,第3の接続部に
第1の誘電体線路63を接続し、第2の接続部に他の誘
電体線路を接続し、その誘電体線路の先端部の端面に、
図8のようなショットキーバリアダイオードを設けたス
イッチを設置してもよい。Further, another circulator is interposed in the first dielectric line 63, the first dielectric line 63 is connected to the first and third connection parts, and another circulator is connected to the second connection part. Connect the dielectric line, and on the end face of the tip of the dielectric line,
A switch provided with a Schottky barrier diode as shown in FIG. 8 may be provided.
【0059】図7のタイプにおいて、第2の誘電体線路
68が、第3の誘電体線路65に一端側が電磁結合する
ように近接配置されるかまたは第3の誘電体線路65に
一端が接合されて、ミリ波信号の一部をミキサー71側
へ伝搬させるように配置されていてもよい。In the type shown in FIG. 7, the second dielectric line 68 is disposed close to the third dielectric line 65 such that one end is electromagnetically coupled to the third dielectric line 65, or one end is joined to the third dielectric line 65. Then, a part of the millimeter wave signal may be arranged to propagate to the mixer 71 side.
【0060】また、これらのミリ波送受信器において、
平行平板導体間の間隔は、ミリ波信号の空気中での波長
であって、使用周波数での波長の2分の1以下となる。Also, in these millimeter wave transceivers,
The distance between the parallel plate conductors is the wavelength of the millimeter wave signal in the air, which is less than half the wavelength at the operating frequency.
【0061】図6,図7のミリ波送受信器用のミリ波信
号発振部52,62は、図1〜図3に示した高周波ダイ
オード発信器を具備し、さらに、例えば図1において、
帯状導体5近傍に、周波数変調用ダイオードであって可
変容量ダイオードの1種であるバラクタダイオードを装
荷した配線基板(図示せず)を設置することもできる。
このバラクタダイオードのバイアス電圧印加方向は、帯
状導体5の電界方向と合致しており、共振器を成す帯状
導体5に周波数変調用ダイオードを近接配置して電磁結
合させ、周波数変調用ダイオードに印加するバイアス電
圧を変化させることで発振周波数を制御でき、また誘電
体線路中に周波数変調用ダイオードを配置する必要がな
いため、損失が小さく高出力が得られるとともに、全体
が小型化する。さらに、周波数変調用ダイオードの位置
を調整することにより、共振器としても機能する帯状導
体と周波数変調用ダイオードとの電磁結合の強さを変え
ることができ、それにより周波数変調幅を調整し得る。The millimeter wave signal oscillators 52 and 62 for the millimeter wave transmitter / receiver shown in FIGS. 6 and 7 include the high-frequency diode oscillators shown in FIGS. 1 to 3.
A wiring board (not shown) loaded with a varactor diode, which is a type of a variable capacitance diode and is a frequency modulation diode, can be provided near the band-shaped conductor 5.
The direction of the bias voltage application of this varactor diode matches the direction of the electric field of the band-shaped conductor 5, and a frequency modulation diode is arranged close to the band-shaped conductor 5 forming a resonator, electromagnetically coupled, and applied to the frequency modulation diode. By changing the bias voltage, the oscillation frequency can be controlled, and since there is no need to arrange a frequency modulation diode in the dielectric line, loss is small, high output is obtained, and the whole is downsized. Further, by adjusting the position of the frequency modulation diode, the strength of the electromagnetic coupling between the band-shaped conductor, which also functions as a resonator, and the frequency modulation diode can be changed, thereby adjusting the frequency modulation width.
【0062】また、図6,図7のミリ波送受信器はFM
CW(Frequency Modulation Cotinuous Waves)方
式であり、FMCW方式の動作原理は以下のようなもの
である。ミリ波信号発振部の変調信号入力用のMODI
N端子に、電圧振幅の時間変化が三角波等となる入力信
号を入力し、その出力信号を周波数変調し、ミリ波信号
発振部の出力周波数偏移を三角波等になるように偏移さ
せる。そして、送受信アンテナ56,送信アンテナ66
より出力信号(送信波)を放射した場合、送受信用アン
テナ56,送信アンテナ66の前方にターゲットが存在
すると、電波の伝搬速度の往復分の時間差をともなっ
て、反射波(受信波)が戻ってくる。この時、ミキサー
59,71の出力側のIFOUT端子には、送信波と受
信波の周波数差が出力される。The millimeter wave transmitter / receiver shown in FIGS.
This is a CW (Frequency Modulation Cotinuous Waves) system, and the operation principle of the FMCW system is as follows. MODI for input of modulation signal of millimeter wave signal oscillator
An input signal whose voltage amplitude changes with time in the form of a triangular wave or the like is input to the N terminal, the output signal is frequency-modulated, and the output frequency shift of the millimeter wave signal oscillating unit is shifted so as to become a triangular wave or the like. Then, the transmitting / receiving antenna 56 and the transmitting antenna 66
When an output signal (transmitted wave) is radiated, if a target exists in front of the transmitting / receiving antenna 56 and the transmitting antenna 66, a reflected wave (received wave) returns with a time difference corresponding to a reciprocation of the propagation speed of the radio wave. come. At this time, the frequency difference between the transmission wave and the reception wave is output to the IFOUT terminal on the output side of the mixers 59 and 71.
【0063】このIFOUT端子の出力周波数等の周波
数成分を解析することで、Fif=4R・fm・Δf/c
{Fif:IF(Intermediate Frequency)出力周波数,
R:距離,fm:変調周波数,Δf:周波数偏移幅,
c:光速}という関係式から距離を求めることができ
る。By analyzing frequency components such as the output frequency of the IFOUT terminal, Fif = 4R · fm · Δf / c
{Fif: IF (Intermediate Frequency) output frequency,
R: distance, fm: modulation frequency, Δf: frequency shift width,
c: The distance can be obtained from the relational expression of light speed}.
【0064】かくして、本発明のミリ波送受信器は、ミ
リ波信号の伝送特性に優れ、ミリ波レーダーの探知距離
を増大し得るものとなり(図6のもの)、また送信用の
ミリ波信号がサーキュレータを介してミキサーへ混入す
ることがなく、その結果受信信号のノイズが低減し探知
距離が増大するものであって(図7のもの)、ミリ波信
号の伝送特性に優れ、ミリ波レーダーの探知距離をさら
に増大し得るものとなる。Thus, the millimeter wave transceiver of the present invention has excellent transmission characteristics of the millimeter wave signal and can increase the detection distance of the millimeter wave radar (shown in FIG. 6). It is not mixed into the mixer via the circulator, and as a result, the noise of the received signal is reduced and the detection distance is increased (FIG. 7). The detection distance can be further increased.
【0065】なお、本発明は上記実施形態に限定される
ものではなく、本発明の要旨を逸脱しない範囲内におい
て種々の変更を行うことは何等差し支えない。It should be noted that the present invention is not limited to the above embodiment, and that various changes can be made without departing from the scope of the present invention.
【0066】[0066]
【実施例】本発明の実施例を以下に説明する。 (実施例)図1のNRDガイド型のガンダイオード発振
器を以下のように構成した。一対の平行平板導体1,1
として、縦100mm×横100mm×厚さ2mmのA
l板を1.8mmの間隔で配置し、それらの間にガンダ
イオード素子3をネジ止めした真鍮性の金属部材2とコ
ーディエライトセラミックスから成る誘電体線路6を設
置した。この金属部材2は高さが約1.8mmの直方体
状であり、その一側面には、発振周波数約77GHzで
波長λが約3.9mmの高周波信号(電磁波)を発振す
るガンダイオード素子3と、ガンダイオード素子3にバ
イアス電圧を入力するチョーク型バイアス供給線路4a
が形成された配線基板4と、チョーク型バイアス供給線
路4aとガンダイオード素子3の上部導体とに接続され
架け渡された帯状導体5を設けた。Embodiments of the present invention will be described below. (Example) The NRD guide type Gunn diode oscillator of FIG. 1 was constructed as follows. A pair of parallel plate conductors 1, 1
A is 100 mm long x 100 mm wide x 2 mm thick
The 1-plates were arranged at an interval of 1.8 mm, and a brass metal member 2 to which a gun diode element 3 was screwed and a dielectric line 6 made of cordierite ceramic were installed between them. The metal member 2 has a rectangular parallelepiped shape having a height of about 1.8 mm, and has on one side thereof a gun diode element 3 which oscillates a high-frequency signal (electromagnetic wave) having an oscillation frequency of about 77 GHz and a wavelength λ of about 3.9 mm. Choke type bias supply line 4a for inputting a bias voltage to gun diode element 3
And a strip-shaped conductor 5 connected and bridged to the choke-type bias supply line 4 a and the upper conductor of the gun diode element 3.
【0067】配線基板4はガラスエポキシ樹脂から成
り、金属部材2に接着剤により固定した。また、チョー
ク型バイアス供給線路4aの幅の広い線路と幅の狭い線
路について、幅の広い線路の長さはλ/4=0.70m
m(誘電体基板上では短波長化する)、幅の狭い線路の
長さはλ/4=0.70mmであり、幅の広い線路部の
幅は1.5mm、幅の狭い線路部の幅は0.2mmであ
る。帯状導体5は厚さ35μm,幅0.6mm,長さ
3.3mmの銅箔リボンから成り、一端をチョーク型バ
イアス供給線路4aに他端をガンダイオード素子3の上
部導体に各々半田付けした。誘電体線路6は、比誘電率
5のコーディエライトセラミックスから成り、ガンダイ
オード素子3の上部導体から約0.5mmの間隔をあけ
て配置した。The wiring board 4 is made of glass epoxy resin, and is fixed to the metal member 2 with an adhesive. Further, regarding the wide line and the narrow line of the choke type bias supply line 4a, the length of the wide line is λ / 4 = 0.70m.
m (the wavelength is reduced on the dielectric substrate), the length of the narrow line is λ / 4 = 0.70 mm, the width of the wide line is 1.5 mm, and the width of the narrow line is Is 0.2 mm. The strip-shaped conductor 5 was made of a copper foil ribbon having a thickness of 35 μm, a width of 0.6 mm, and a length of 3.3 mm, and one end was soldered to the choke-type bias supply line 4 a and the other end was soldered to the upper conductor of the gun diode element 3. The dielectric line 6 is made of cordierite ceramics having a relative dielectric constant of 5, and is arranged at a distance of about 0.5 mm from the upper conductor of the Gunn diode element 3.
【0068】そして、下側の平行平板導体1の内面に金
属部材2の帯状導体5部前方(0.5mm前方)の部位
から平行平板導体1の一辺11にかけて、帯状導体5に
平行な溝8を形成した。溝8の幅は10mm、深さは1
mmであり、溝8の平行平板導体1間の内部側の一端
は、誘電体線路6から1mm離れた部位に形成した。A groove 8 parallel to the band-shaped conductor 5 is formed on the inner surface of the lower parallel plate-shaped conductor 1 from the front portion (0.5 mm front) of the band-shaped conductor 5 of the metal member 2 to one side 11 of the parallel plate-shaped conductor 1. Was formed. The width of the groove 8 is 10 mm and the depth is 1
mm, and one end of the groove 8 on the inner side between the parallel plate conductors 1 is formed at a position 1 mm away from the dielectric line 6.
【0069】そして、溝8に幅10mm、厚み1mm、
長さ50mmのAl製の平板導体10を外部より嵌め込
んだ。この平板導体10の平行平板導体1間の内部側の
先端に、高さが1.8mm、帯状導体5の主面と対向す
る主面の長さが5mm、先細りとなった先端の幅が0.
3mm、最も厚い後端の幅が1mmである略三角柱状の
誘電体チップ9を配置し、エポキシ系樹脂により平板導
体10上に接着した。誘電体チップ9は比誘電率5のコ
ーディエライトセラミックスから成り、誘電体チップ9
の帯状導体5に対向する主面を平板導体10の帯状導体
5側の縁に沿わせて配置した。この場合、平板導体10
の移動に伴って誘電体チップ9が溝8の内面に接触しな
いように僅かな間隔をあけた。The groove 8 has a width of 10 mm, a thickness of 1 mm,
A 50 mm long aluminum flat conductor 10 was fitted from outside. At the inner end of the flat conductor 10 between the parallel flat conductors 1, the height is 1.8 mm, the length of the main surface facing the main surface of the strip-shaped conductor 5 is 5 mm, and the width of the tapered end is 0 mm. .
An approximately triangular prism-shaped dielectric chip 9 having a width of 3 mm and a thickest rear end having a width of 1 mm was arranged, and bonded to the flat conductor 10 with an epoxy resin. The dielectric chip 9 is made of cordierite ceramics having a relative dielectric constant of 5, and the dielectric chip 9
The main surface of the flat conductor 10 facing the strip conductor 5 is arranged along the edge of the flat conductor 10 on the strip conductor 5 side. In this case, the flat conductor 10
A slight interval was provided so that the dielectric chip 9 did not come into contact with the inner surface of the groove 8 with the movement of.
【0070】まず、誘電体チップ9の主面と帯状導体5
の主面とが、対向して重なることがない場合の発振周波
数は76.518GHzであった。そして、平板導体1
0を誘電体線路6の方向に1mm進入させた場合、つま
り誘電体チップ9の主面が先端から1mm帯状導体5の
主面と対向し重なっている場合、発振周波数は76.4
97GHzとなり、21MHz変化させることができた。
また、平板導体10を誘電体線路6の方向にさらに1m
m(計2mm)進入させると、発振周波数は76.32
6GHzとなり、192MHzも変化させることができ
た。このように、平板導体10の移動距離を調整するこ
とで再現性良く発振周波数を制御できた。First, the main surface of the dielectric chip 9 and the strip conductor 5
The oscillation frequency was 76.518 GHz when the main surface did not overlap with the main surface. And the flat conductor 1
When 0 is made to enter the direction of the dielectric line 6 by 1 mm, that is, when the main surface of the dielectric chip 9 is opposed to and overlaps the main surface of the 1 mm band-shaped conductor 5 from the tip, the oscillation frequency is 76.4.
97 GHz, and could be changed by 21 MHz.
Further, the flat conductor 10 is further moved by 1 m in the direction of the dielectric line 6.
m (total 2 mm), the oscillation frequency becomes 76.32
It became 6 GHz, which could be changed by 192 MHz. As described above, the oscillation frequency could be controlled with good reproducibility by adjusting the moving distance of the flat conductor 10.
【0071】[0071]
【発明の効果】本発明は、NRDガイド型の高周波ダイ
オード発振器において、チョーク型バイアス供給線路の
幅の広い線路および幅の狭い線路の長さをそれぞれ略λ
/4、帯状導体の長さを略{(3/4)+n}λ(nは
0以上の整数)とするとともに、平行平板導体間側の少
なくとも一方の面に金属部材の帯状導体部前方の部位か
ら平行平板導体の一辺にかけて帯状導体に略平行な溝が
形成され、溝に沿って移動するように溝に嵌入された平
板導体が設けられ、かつ平板導体上に帯状導体の主面と
対向する主面を有する略三角柱状の誘電体チップが帯状
導体と電磁結合するように近接して立設されていること
により、チョーク型バイアス供給線路と帯状導体とが高
周波ダイオードの発振周波数を決定する共振器として機
能し、また平板導体を移動させることにより、帯状導体
と対向し重なる誘電体チップの主面の対向部分の厚さ、
対向面積および体積を調整して、帯状導体を伝搬する高
周波信号の波長を微調整でき、その結果チョーク型バイ
アス供給線路と帯状導体とから成る共振器の実質的な共
振器長を微妙に調整でき、また発振周波数を再現性良く
調整できる。According to the present invention, in an NRD guide type high frequency diode oscillator, the lengths of the wide and narrow choke-type bias supply lines are set to approximately λ.
/ 4, the length of the strip conductor is substantially {(3/4) + n} λ (n is an integer of 0 or more), and at least one surface between the parallel plate conductors is provided in front of the strip conductor portion of the metal member. A groove substantially parallel to the band-shaped conductor is formed from the portion to one side of the parallel plate conductor, a plate conductor fitted in the groove is provided so as to move along the groove, and the main surface of the band-shaped conductor is opposed to the flat conductor. The choke-type bias supply line and the band-shaped conductor determine the oscillation frequency of the high-frequency diode because the substantially triangular prism-shaped dielectric chip having the main surface to be erected is set up close to the band-shaped conductor so as to be electromagnetically coupled. By functioning as a resonator and moving the flat conductor, the thickness of the facing portion of the main surface of the dielectric chip facing and overlapping the strip conductor,
By adjusting the facing area and volume, the wavelength of the high-frequency signal propagating in the strip conductor can be finely adjusted. As a result, the substantial resonator length of the resonator consisting of the choke type bias supply line and the strip conductor can be finely adjusted. Also, the oscillation frequency can be adjusted with good reproducibility.
【0072】また、本発明において、誘電体チップは、
頂角が60°未満の略ニ等辺三角形から成る底面を有し
ており、ニ等辺三角形の底辺が平行平板導体の一辺側に
向くように立設されていることにより、帯状導体の主面
に対向する誘電体チップの対向部分の厚さ等を、平板導
体を移動させることにより漸次変化させることができ、
その結果発振周波数を漸次細かに変化させることができ
る。Further, in the present invention, the dielectric chip
It has a bottom surface consisting of an approximately isosceles triangle with an apex angle of less than 60 °, and the base of the isosceles triangle is erected so as to face one side of the parallel plate conductor. The thickness of the facing portion of the facing dielectric chip can be gradually changed by moving the flat conductor,
As a result, the oscillation frequency can be gradually and finely changed.
【0073】本発明の送受信アンテナを兼用するタイプ
のミリ波送受信器は、ミリ波信号発振部が本発明の高周
波ダイオード発振器を具備することにより、発振周波数
を再現性良く微調整できるとともに、送信波の一部がサ
ーキュレータを介してミキサーへ混入する量が減少し、
その結果ミリ波レーダー等に適用した場合にその探知距
離を増大し得るものとなる。The millimeter-wave transmitter / receiver of the present invention, which also serves as the transmitting / receiving antenna, can fine-tune the oscillation frequency with good reproducibility and provide the transmitting wave by using the high-frequency diode oscillator of the present invention. Part of the mixture enters the mixer via the circulator,
As a result, when applied to a millimeter wave radar or the like, the detection distance can be increased.
【0074】また、本発明の送信アンテナと受信アンテ
ナが独立したタイプのミリ波送受信器は、ミリ波信号発
振部が本発明の高周波ダイオード発振器を具備すること
により、発振周波数を再現性良く微調整できるととも
に、送信アンテナで受信したミリ波信号がミリ波信号発
振部へ混入することがなく、従ってミリ波レーダーに適
用した場合受信信号のノイズが低減し、ミリ波信号の伝
搬特性に優れ、ミリ波レーダーの探知距離をさらに増大
し得るものとなる。Further, in the millimeter wave transmitter / receiver of the present invention in which the transmitting antenna and the receiving antenna are independent, the oscillation frequency is finely adjusted with good reproducibility by providing the millimeter wave signal oscillating section with the high frequency diode oscillator of the present invention. In addition to this, the millimeter wave signal received by the transmitting antenna is not mixed into the millimeter wave signal oscillating unit. Therefore, when applied to a millimeter wave radar, the noise of the received signal is reduced, and the millimeter wave signal has excellent propagation characteristics. The detection range of the wave radar can be further increased.
【図1】本発明のNRDガイド型の高周波ダイオード発
振器の内部を透視した斜視図である。FIG. 1 is a perspective view of the inside of an NRD guide type high-frequency diode oscillator according to the present invention.
【図2】チョーク型バイアス供給線路および帯状導体の
平面図である。FIG. 2 is a plan view of a choke-type bias supply line and a strip conductor.
【図3】本発明の高周波ダイオード発振器を示し、
(a)はチョーク型バイアス供給線路,帯状導体および
誘電体チップ付近の側面図、(b)は(a)のA−A線
における断面図である。FIG. 3 shows a high-frequency diode oscillator according to the present invention,
(A) is a side view near a choke-type bias supply line, a strip conductor, and a dielectric chip, and (b) is a cross-sectional view taken along line AA of (a).
【図4】(a)は本発明の誘電体チップの平面図、
(b),(c)はそれぞれ本発明の誘電体チップの実施
の形態の例を示す斜視図である。FIG. 4A is a plan view of a dielectric chip of the present invention,
(B) and (c) are perspective views each showing an example of an embodiment of the dielectric chip of the present invention.
【図5】従来のNRDガイド型の高周波ダイオード発振
器の内部を透視した斜視図である。FIG. 5 is a perspective view showing the inside of a conventional NRD guide type high frequency diode oscillator.
【図6】本発明によるNRDガイド型のミリ波送受信器
において、実施の形態の一例を示す平面図である。FIG. 6 is a plan view showing an example of an embodiment of an NRD guide type millimeter wave transceiver according to the present invention.
【図7】本発明によるNRDガイド型のミリ波送受信器
において、実施の形態の他の例を示す平面図である。FIG. 7 is a plan view showing another example of the embodiment of the NRD guide type millimeter wave transceiver according to the present invention.
【図8】本発明のミリ波送受信器に用いられ、ミリ波信
号を周波数変調またはパルス変調させるためのスイッチ
であり、PINダイオードやショットキーバリアダイオ
ードを設けた配線基板の斜視図である。FIG. 8 is a perspective view of a wiring board provided with a PIN diode or a Schottky barrier diode, which is a switch used in the millimeter wave transceiver of the present invention for frequency modulation or pulse modulation of a millimeter wave signal.
1:平行平板導体 2:金属部材 3:ガンダイオード素子 4:配線基板 4a:チョーク型バイアス供給線路 5:帯状導体 6:誘電体線路 8:溝 9:誘電体チップ 10:平板導体 1: Parallel plate conductor 2: Metal member 3: Gunn diode element 4: Wiring board 4a: Choke type bias supply line 5: Strip conductor 6: Dielectric line 8: Groove 9: Dielectric chip 10: Flat conductor
Claims (6)
で配置した平行平板導体間に金属部材を設置し、該金属
部材に、高周波信号を発振する高周波ダイオードと、幅
の広い線路および幅の狭い線路が交互に形成されたチョ
ーク型バイアス供給線路と、前記高周波ダイオードおよ
び前記チョーク型バイアス供給線路の間に架け渡されて
直線状に接続する帯状導体とを設けるとともに、前記平
行平板導体間の前記高周波ダイオードの近傍に前記高周
波信号を受信し伝搬させる誘電体線路を設けて成る高周
波ダイオード発振器において、 前記チョーク型バイアス供給線路の幅の広い線路および
幅の狭い線路の長さをそれぞれ略λ/4、前記帯状導体
の長さを略{(3/4)+n}λ(nは0以上の整数)
とするとともに、前記平行平板導体間側の少なくとも一
方の面に前記金属部材の帯状導体部前方の部位から前記
平行平板導体の一辺にかけて前記帯状導体に略平行な溝
が形成され、該溝に沿って移動するように前記溝に嵌入
された平板導体が設けられ、かつ前記平板導体上に前記
帯状導体の主面と対向する主面を有する略三角柱状の誘
電体チップが前記帯状導体と電磁結合するように近接し
て立設されていることを特徴とする高周波ダイオード発
振器。A metal member is provided between parallel plate conductors arranged at an interval of one half or less of a wavelength λ of a high-frequency signal, and a high-frequency diode for oscillating a high-frequency signal and a wide line are provided on the metal member. And a choke-type bias supply line in which narrow lines are alternately formed, and a band-shaped conductor that is bridged between the high-frequency diode and the choke-type bias supply line and connected in a straight line. In a high-frequency diode oscillator comprising a dielectric line for receiving and propagating the high-frequency signal in the vicinity of the high-frequency diode between conductors, the choke-type bias supply line has a wide line and a narrow line. Substantially λ / 4, the length of the strip conductor is approximately {(3/4) + n} λ (n is an integer of 0 or more)
And a groove substantially parallel to the band-shaped conductor is formed on at least one surface between the parallel plate-shaped conductors from a portion in front of the band-shaped conductor of the metal member to one side of the parallel plate-shaped conductor. A substantially triangular prism-shaped dielectric chip having a main surface opposed to the main surface of the band-shaped conductor is provided on the flat plate conductor so as to be electromagnetically coupled with the band-shaped conductor. A high-frequency diode oscillator, which is set up so as to be close to the high-frequency diode oscillator.
略二等辺三角形から成る底面を有しており、前記二等辺
三角形の底辺が前記平行平板導体の前記一辺側に向くよ
うに立設されていることを特徴とする請求項1記載の高
周波ダイオード発振器。2. The dielectric chip has a bottom surface formed of a substantially isosceles triangle having a vertex angle of less than 60 °, and the base of the isosceles triangle is directed to the one side of the parallel plate conductor. 2. The high frequency diode oscillator according to claim 1, wherein the high frequency diode oscillator is provided upright.
配置した平行平板導体間に、 高周波ダイオード発振器が一端部に付設され、前記高周
波ダイオード発振器から出力されたミリ波信号を伝搬さ
せる第1の誘電体線路と、 バイアス電圧印加方向が前記ミリ波信号の電界方向に合
致するように配置され、前記バイアス電圧を周期的に制
御することによって前記ミリ波信号を周波数変調した送
信用のミリ波信号として出力する可変容量ダイオード
と、 前記第1の誘電体線路に一端側が電磁結合するように近
接配置されるかまたは一端が接合されて、前記ミリ波信
号の一部をミキサー側へ伝搬させる第2の誘電体線路
と、 前記平行平板導体に平行に配設されたフェライト板の周
縁部に所定間隔で配置されかつそれぞれ前記ミリ波信号
の入出力端とされた第1の接続部,第2の接続部および第
3の接続部を有し、一つの前記接続部から入力された前
記ミリ波信号をフェライト板の面内で時計回りまたは反
時計回りに隣接する他の接続部より出力させるサーキュ
レータであって、前記第1の誘電体線路の前記ミリ波信
号の出力端に前記第1の接続部が接合されたサーキュレ
ータと、 該サーキュレータの第2の接続部に接合され、前記ミリ
波信号を伝搬させるとともに先端部に送受信アンテナを
有する第3の誘電体線路と、 前記送受信アンテナで受信され第3の誘電体線路を伝搬
して前記サーキュレータの第3の接続部より出力した受
信波をミキサー側へ伝搬させる第4の誘電体線路と、 前記第2の誘電体線路の中途と前記第4の誘電体線路の
中途とを近接させて電磁結合させるかまたは接合させて
成り、ミリ波信号の一部と受信波とを混合させて中間周
波信号を発生させるミキサー部と、を設けたミリ波送受
信器において、 前記高周波ダイオード発振器を請求項1または請求項2
記載の高周波ダイオード発振器としたことを特徴とする
ミリ波送受信器。3. A high-frequency diode oscillator is provided at one end between parallel plate conductors arranged at an interval equal to or less than half the wavelength of the millimeter-wave signal, and propagates the millimeter-wave signal output from the high-frequency diode oscillator. A first dielectric line to be transmitted, wherein the bias voltage application direction is arranged so as to coincide with the electric field direction of the millimeter wave signal, and the millimeter wave signal is frequency-modulated by periodically controlling the bias voltage. A variable-capacitance diode that outputs a millimeter-wave signal as described above, one end of which is disposed close to or electromagnetically coupled to the first dielectric line, or one end of the variable-capacitance diode is joined, and a part of the millimeter-wave signal is sent to the mixer side. A second dielectric line to be propagated, and input / output terminals of the millimeter wave signal, which are arranged at predetermined intervals on a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor, and The first connection, the second connection and the
A circulator having three connection portions and outputting the millimeter wave signal input from one connection portion from another connection portion adjacent to the ferrite plate clockwise or counterclockwise in the plane of the ferrite plate, A circulator in which the first connection portion is joined to an output end of the millimeter-wave signal of the first dielectric line; and a circulator joined to a second connection portion of the circulator to propagate the millimeter-wave signal and to provide a tip portion. A third dielectric line having a transmitting / receiving antenna, and a fourth receiving line received by the transmitting / receiving antenna, propagated through the third dielectric line, and output from a third connection portion of the circulator and propagated to the mixer side. And a middle part of the second dielectric line and a middle part of the fourth dielectric line are brought close to each other and electromagnetically coupled or joined, and a part of a millimeter wave signal and a reception wave are formed. Mix In the millimeter-wave transceiver which is provided and a mixer for generating an intermediate frequency signal by, wherein the high-frequency diode oscillator to claim 1 or claim 2
A millimeter-wave transceiver, wherein the high-frequency diode oscillator is described.
配置した平行平板導体間に、 高周波ダイオード発振器が一端部に付設され、前記高周
波ダイオード発振器から出力されたミリ波信号を伝搬さ
せる第1の誘電体線路と、 バイアス電圧印加方向が前記ミリ波信号の電界方向に合
致するように配置され、前記バイアス電圧を周期的に制
御することによって前記ミリ波信号を周波数変調した送
信用のミリ波信号として出力する可変容量ダイオード
と、 前記第1の誘電体線路に一端側が電磁結合するように近
接配置されるかまたは一端が接合されて、前記ミリ波信
号の一部をミキサー側へ伝搬させる第2の誘電体線路
と、 前記平行平板導体に平行に配設されたフェライト板の周
縁部に所定間隔で配置されかつそれぞれ前記ミリ波信号
の入出力端とされた第1の接続部,第2の接続部および第
3の接続部を有し、一つの前記接続部から入力された前
記ミリ波信号をフェライト板の面内で時計回りまたは反
時計回りに隣接する他の接続部より出力させるサーキュ
レータであって、前記第1の誘電体線路の前記ミリ波信
号の出力端に第1の接続部が接続されるサーキュレータ
と、 該サーキュレータの第2の接続部に接続され、前記ミリ
波信号を伝搬させるとともに先端部に送信アンテナを有
する第3の誘電体線路と、 先端部に受信アンテナ、他端部にミキサーが各々設けら
れた第4の誘電体線路と、 前記サーキュレータの第3の接続部に接続され、前記送
信アンテナで受信混入したミリ波信号を伝搬させるとと
もに先端部に設けられた無反射終端部で前記ミリ波信号
を減衰させる第5の誘電体線路と、 前記第2の誘電体線路の中途と前記第4の誘電体線路の
中途とを近接させて電磁結合させるかまたは接合させて
成り、ミリ波信号の一部と受信波とを混合させて中間周
波信号を発生させるミキサー部と、を設けたミリ波送受
信器において、 前記高周波ダイオード発振器を請求項1または請求項2
記載の高周波ダイオード発振器としたことを特徴とする
ミリ波送受信器。4. A high-frequency diode oscillator is provided at one end between parallel plate conductors arranged at an interval equal to or less than half the wavelength of the millimeter-wave signal, and the millimeter-wave signal output from the high-frequency diode oscillator is propagated. A first dielectric line to be transmitted, wherein the bias voltage application direction is arranged so as to coincide with the electric field direction of the millimeter wave signal, and the millimeter wave signal is frequency-modulated by periodically controlling the bias voltage. A variable-capacitance diode that outputs a millimeter-wave signal as described above, one end of which is disposed close to or electromagnetically coupled to the first dielectric line, or one end of the variable-capacitance diode is joined, and a part of the millimeter-wave signal is sent to the mixer side. A second dielectric line to be propagated, and input / output terminals of the millimeter wave signal, which are arranged at predetermined intervals on a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor, and The first connection, the second connection and the
A circulator having three connection portions and outputting the millimeter wave signal input from one connection portion from another connection portion adjacent to the ferrite plate clockwise or counterclockwise in the plane of the ferrite plate, A circulator having a first connection portion connected to the output end of the millimeter-wave signal of the first dielectric line; and a circulator connected to a second connection portion of the circulator for transmitting the millimeter-wave signal and at the distal end. A third dielectric line having a transmitting antenna, a fourth dielectric line having a receiving antenna at the tip and a mixer at the other end, and a third connecting portion of the circulator, A fifth dielectric line that propagates a millimeter-wave signal received and mixed by an antenna and attenuates the millimeter-wave signal at a non-reflection end provided at a tip end; A mixer section that is formed by electromagnetically coupling or joining the middle part of the fourth dielectric line so as to be close to each other, and that generates an intermediate frequency signal by mixing a part of the millimeter wave signal and the reception wave. The millimeter-wave transceiver, wherein the high-frequency diode oscillator is used.
A millimeter-wave transceiver, wherein the high-frequency diode oscillator is described.
体線路に一端側が電磁結合するように近接配置されるか
または一端が接合されて、前記ミリ波信号の一部をミキ
サー側へ伝搬させるように配置されていることを特徴と
する請求項4記載のミリ波送受信器。5. The second dielectric line is disposed close to one end of the third dielectric line so as to be electromagnetically coupled to the third dielectric line, or the other end is joined to the third dielectric line, and a part of the millimeter wave signal is mixed by a mixer. 5. The millimeter wave transceiver according to claim 4, wherein the millimeter wave transceiver is arranged to propagate to the side.
線路との信号分岐部と、前記サーキュレータとの間に、
バイアス電圧印加方向が前記ミリ波信号の電界方向に合
致するように配置され、前記バイアス電圧をON−OF
Fすることによって前記ミリ波信号をパルス変調し送信
用のミリ波信号として出力するパルス変調用ダイオード
を設けたことを特徴とする請求項3〜5のいずれかに記
載のミリ波送受信器。6. A circulator between a signal branch portion of the first dielectric line with the second dielectric line and the circulator.
The bias voltage application direction is arranged so as to coincide with the electric field direction of the millimeter wave signal, and the bias voltage is set to ON-OF.
The millimeter wave transceiver according to any one of claims 3 to 5, further comprising a pulse modulation diode that pulse-modulates the millimeter wave signal by performing F and outputs the millimeter wave signal as a millimeter wave signal for transmission.
Priority Applications (1)
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JP2000229406A JP2002043656A (en) | 2000-07-28 | 2000-07-28 | High-frequency diode oscillator and millimeter wave transmitter-receiver using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000229406A JP2002043656A (en) | 2000-07-28 | 2000-07-28 | High-frequency diode oscillator and millimeter wave transmitter-receiver using the same |
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Publication Number | Publication Date |
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JP2002043656A true JP2002043656A (en) | 2002-02-08 |
Family
ID=18722529
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JP2000229406A Withdrawn JP2002043656A (en) | 2000-07-28 | 2000-07-28 | High-frequency diode oscillator and millimeter wave transmitter-receiver using the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100587901B1 (en) * | 2002-08-10 | 2006-06-08 | 엔알디테크 주식회사 | NRD Guide Gunn Oscillator and Frequency Locking Method using Ceramic Resonator |
-
2000
- 2000-07-28 JP JP2000229406A patent/JP2002043656A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100587901B1 (en) * | 2002-08-10 | 2006-06-08 | 엔알디테크 주식회사 | NRD Guide Gunn Oscillator and Frequency Locking Method using Ceramic Resonator |
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