JP2002036270A - Method and apparatus for sealing resin - Google Patents

Method and apparatus for sealing resin

Info

Publication number
JP2002036270A
JP2002036270A JP2000220791A JP2000220791A JP2002036270A JP 2002036270 A JP2002036270 A JP 2002036270A JP 2000220791 A JP2000220791 A JP 2000220791A JP 2000220791 A JP2000220791 A JP 2000220791A JP 2002036270 A JP2002036270 A JP 2002036270A
Authority
JP
Japan
Prior art keywords
mold
cavity
resin
resin sealing
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000220791A
Other languages
Japanese (ja)
Other versions
JP4484329B2 (en
Inventor
Fumio Miyajima
文夫 宮島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apic Yamada Corp
Original Assignee
Apic Yamada Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apic Yamada Corp filed Critical Apic Yamada Corp
Priority to JP2000220791A priority Critical patent/JP4484329B2/en
Publication of JP2002036270A publication Critical patent/JP2002036270A/en
Application granted granted Critical
Publication of JP4484329B2 publication Critical patent/JP4484329B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a resin sealing method capable of inexpensively and efficiently mass-produce a semiconductor package without generating resin flash in a molded article. SOLUTION: Mold communication runners 9 for allowing the adjacent cavity recessed parts 4 of a lower mold 3 to communicate with each other are formed to a mold 1 and a release film 5 is brought into contact with the inner lead part 8a of a lead frame 8 under pressure to be clamped thereto, and the liquid resin 6 overflowing the cavities and the residual air in the cavities are pushed out toward the cavities of the peripheral part of the mold from the cavity at the central part of the mold through the mold communication runners 9 to perform compression molding.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する利用分野】本発明は、マトリクス状にキ
ャビティ凹部が形成された下型を有するモールド金型の
うち少なくとも一方のパーティング面がリリースフィル
ムにより覆われ、各キャビティに液状樹脂が充填され
て、半導体チップがマトリクス状に基板に搭載された被
成形品が搬入されてモールド金型にクランプされて圧縮
成形される樹脂封止方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mold having a lower mold having cavity recesses formed in a matrix, at least one parting surface of which is covered with a release film, and each cavity is filled with a liquid resin. Also, the present invention relates to a resin sealing method and apparatus in which a molded article having semiconductor chips mounted on a substrate in a matrix is carried in, clamped by a mold, and compression molded.

【０００２】[0002]

【従来の技術】半導体パッケージには様々な種類のもの
が開発され実用化されているが、表面実装型の半導体パ
ッケージの中でＱＦＮ（Ｑｕａｄ・Ｆｌａｔ・Ｎｏｎ−
ｌｅａｄｅｄ）と呼ばれるパッケージが用いられてい
る。これは、パッケージより延出するリードが無く実装
占有面積が小さくしかも実装高さも抑えられることから
用いられている。2. Description of the Related Art Various types of semiconductor packages have been developed and put into practical use. Among surface-mount type semiconductor packages, QFNs (Quad, Flat, Non-
A package called “leaded” is used. This is used because there is no lead extending from the package, the mounting area is small, and the mounting height is suppressed.

【０００３】このＱＦＮタイプのパッケージを製造する
場合、半導体チップをマトリクス状に搭載したリードフ
レームのリードを露出して樹脂封止する必要がある。こ
のためトランスファ成形法による樹脂封止装置において
は、モールド金型の一方のパーティング面にリリースフ
ィルムで覆って、露出させるリード部分を押接すること
によりリード露出面側に樹脂を回さずに樹脂封止でき
る。また、金型キャビティをマトリクス状に形成された
モールド金型の金型面をリリースフィルムで覆ってお
き、該モールド金型にリードフレーム及び封止樹脂を搬
入してクランプすることにより半導体チップを一括して
樹脂封止したり、予めリードフレームに耐熱マスキング
テープ（例えばポリイミドテープ）を貼り付けておき、
該リードフレームを１のキャビティを有するモールド金
型でクランプして半導体チップを一括して樹脂封止した
後、樹脂封止部をダイサーにて個片に切断してパッケー
ジを製造する方法も提案されている。When manufacturing this QFN type package, it is necessary to expose the leads of a lead frame on which semiconductor chips are mounted in a matrix form and to seal them with a resin. For this reason, in a resin molding apparatus using the transfer molding method, one parting surface of a molding die is covered with a release film, and the lead portion to be exposed is pressed into contact with the resin without turning the resin toward the lead exposed surface. Can be sealed. Also, the mold cavities are covered with a release film on the mold surface of a mold formed in a matrix, and a lead frame and a sealing resin are loaded into the mold and clamped to collectively package the semiconductor chips. And resin sealing or pasting a heat-resistant masking tape (for example, polyimide tape) to the lead frame in advance,
A method has also been proposed in which the lead frame is clamped with a mold having one cavity to collectively seal the semiconductor chips with a resin, and then the resin sealed portion is cut into individual pieces by a dicer to manufacture a package. ing.

【０００４】[0004]

【発明が解決しようとする課題】近年、パッケージサイ
ズが小型化しており、実装面積の小さいＱＦＮタイプの
半導体パッケージが用いられるようになっている。この
ＱＦＮタイプのパッケージは、リードフレームにダイパ
ッド部及びインナーリード部がマトリクス状に配置形成
されており、各ダイパッド部に半導体チップが搭載され
たものを樹脂封止装置に搬入してモールド金型にクラン
プされてトランスファ成形される。即ち、モールド金型
のポットより各金型キャビティへ金型ゲートランナを介
して封止樹脂を送り込んで樹脂封止するようになってい
る。一例として特開平５−３１５５１４号公報が提案さ
れている。しかしながら、モールド金型には、金型ゲー
トランナがリードフレームを横切るように形成されるた
め、金型キャビティを狭ピッチでマトリクス状に形成す
るのには限界がある。また、１の金型キャビティより隣
合う次の金型キャビティへスルーランナを設けて複数金
型キャビティを１連にて樹脂封止することも考えられる
（例えば特開平４−３３３２７２号公報参照）。しかし
ながら、キャビティサイズにも依存するが、途中で封止
樹脂の硬化が始まるため、２連〜４連程度が限界であり
封止樹脂をマトリクス状に配置された金型キャビティ全
体に行き渡らせて均一に樹脂封止することは困難であ
る。In recent years, the package size has been reduced, and a QFN type semiconductor package having a small mounting area has been used. In this QFN type package, a die frame portion and an inner lead portion are arranged and formed in a matrix on a lead frame, and a semiconductor chip mounted on each die pad portion is carried into a resin sealing device, and is formed into a molding die. It is clamped and transfer molded. That is, the sealing resin is fed from the pot of the mold to each mold cavity via the mold gate runner to seal the resin. As an example, Japanese Patent Application Laid-Open No. 5-315514 has been proposed. However, since the mold gate runner is formed across the lead frame in the mold, there is a limit in forming the mold cavities in a matrix at a narrow pitch. It is also conceivable to provide a through-runner in the next mold cavity adjacent to one mold cavity and to seal a plurality of mold cavities with a single resin (see, for example, JP-A-4-333272). However, although it depends on the cavity size, the curing of the sealing resin starts on the way, so the limit is about 2 to 4 stations, and the sealing resin spreads over the entire mold cavities arranged in a matrix and is uniform. It is difficult to seal with resin.

【０００５】また、リードフレームを１のキャビティが
形成されたモールド金型に搬入して一括して樹脂封止す
る場合、リリースフィルムの弾性力でリードをパッケー
ジの内方に反らせ易くしかもリードフレームの中央部に
はクランプ力が作用し難く、リリースフィルムとリード
間に樹脂が入り込み易いので、成形品に樹脂フラッシュ
が発生する。この樹脂フラッシュを防止するため、予め
リードフレームに耐熱マスキングテープを貼り付けてお
くのは該テープがリリースフィルムに比べて高価であ
り、しかもテープ貼り付け機などの付帯設備も必要とな
るため製造コストが高くなる。また、１の金型キャビテ
ィにて一括して樹脂封止する場合、樹脂封止後のパッケ
ージをダイサーにより個片に切断するのは時間がかかり
生産性が低いという課題もあった。Further, when the lead frame is carried into a mold having one cavity formed therein and is collectively sealed with a resin, the lead is easily warped inward of the package by the elastic force of the release film. Since the clamping force is hard to act on the central portion and the resin easily enters between the release film and the lead, resin flash occurs in the molded product. In order to prevent this resin flash, it is necessary to apply a heat-resistant masking tape to the lead frame in advance, because the tape is more expensive than the release film, and additional equipment such as a tape attaching machine is required. Will be higher. In addition, in the case of performing resin encapsulation collectively in one mold cavity, there is a problem that it takes time to cut the package after resin encapsulation into individual pieces by a dicer, resulting in low productivity.

【０００６】本発明の目的は、上記従来技術の課題を解
決し、成形品に樹脂フラッシュを生ずることなく、しか
も半導体パッケージを安価に効率良く大量生産可能な樹
脂封止方法及び装置を提供することにある。An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a resin sealing method and apparatus capable of efficiently and inexpensively mass-producing a semiconductor package without causing resin flash on a molded product. It is in.

【０００７】[0007]

【課題を解決するための手段】上記課題を解決するた
め、本発明は次の構成を備える。即ち、樹脂封止方法に
おいては、下型にキャビティ凹部がマトリクス状に形成
されたモールド金型のパーティング面をリリースフィル
ムにより覆い、キャビティ凹部に液状樹脂を供給し、半
導体チップがキャビティ凹部と同配置でマトリクス状に
搭載された被成形品を下型へ搬入し、該下型と上型とで
クランプして圧縮成形する樹脂封止方法において、モー
ルド金型には、下型の隣接するキャビティ凹部どうしを
連絡する金型連通ランナが形成されており、被成形品の
リード部にリリースフィルムを押接させてクランプし、
キャビティより溢れた液状樹脂及び該キャビティ内の残
留エアーを金型中央部のキャビティより金型連通ランナ
を通じて金型周辺部のキャビティに向かって押し出して
圧縮成形することを特徴する。また、キャビティ凹部ど
うしを連絡する金型連通ランナが交差する部位にはダミ
ーキャビティが形成されており、キャビティより溢れた
液状樹脂を収容して樹脂封止することを特徴とする。ま
た、下型にマトリクス状に形成されたキャビティ凹部の
底部を構成するキャビティブロックは可動に設けられて
おり、モールド金型をクランプする際に、先ず金型中央
側のキャビティブロックを金型周辺部側のキャビティブ
ロックより先に押し上げて樹脂封止することを特徴とす
る。また、下型にマトリクス状に形成されたキャビティ
凹部のうち金型中央部のキャビティ凹部に液状樹脂を溢
れるように供給してモールド金型をクランプすることに
より、液状樹脂を金型中央部のキャビティより金型連通
ランナを通じて金型周辺部のキャビティに向かって押し
出すように樹脂封止することを特徴とする。また、被成
形品は半導体チップがマトリクス状にリードフレームに
搭載されており、インナーリードの一部が上型のパーテ
ィング面を覆うリリースフィルムに押接されて露出して
樹脂封止されることを特徴とする。To solve the above-mentioned problems, the present invention has the following arrangement. That is, in the resin sealing method, a parting surface of a mold having a cavity recess formed in a matrix in a lower mold is covered with a release film, a liquid resin is supplied to the cavity recess, and the semiconductor chip is formed in the same manner as the cavity recess. In a resin sealing method in which a molded article mounted in a matrix in an arrangement is carried into a lower mold, and the lower mold and the upper mold are clamped and compression-molded, the molding die includes a cavity adjacent to the lower mold. A mold communication runner that connects the recesses is formed, and the release film is pressed against the lead of the molded product and clamped.
The liquid resin overflowing from the cavity and the residual air in the cavity are extruded from the cavity at the center of the mold through the mold communication runner toward the cavity at the periphery of the mold to perform compression molding. In addition, a dummy cavity is formed at a portion where the mold communication runners communicating the cavity recesses intersect, and the liquid resin overflowing from the cavity is housed and sealed with the resin. Also, the cavity block forming the bottom of the cavity recesses formed in a matrix in the lower mold is provided movably, and when clamping the mold, first the cavity block on the center of the mold is moved to the periphery of the mold. It is characterized in that it is pushed up before the cavity block on the side and is sealed with resin. In addition, the liquid resin is supplied to the cavity recess at the center of the mold among the cavity recesses formed in a matrix shape in the lower mold so as to overflow, and the mold is clamped so that the liquid resin is supplied to the cavity at the center of the mold. It is characterized in that the resin is sealed so as to be extruded toward the cavity around the mold through the mold communication runner. In addition, the semiconductor chip is mounted on the lead frame in a matrix shape, and a part of the inner lead is exposed to the release film that covers the parting surface of the upper die and is exposed and sealed with resin. It is characterized by.

【０００８】また、樹脂封止装置においては、モールド
金型のパーティング面がリリースフィルムにより覆わ
れ、下型にマトリクス状に形成されたキャビティ凹部に
液状樹脂が供給されると共に、半導体チップがキャビテ
ィ凹部と同配置のマトリクス状に搭載された被成形品が
搬入されて下型と上型とで圧縮成形される樹脂封止装置
において、モールド金型には、下型の隣接するキャビテ
ィ凹部どうしを連絡する金型連通ランナが形成されてお
り、被成形品のリード部にリリースフィルムを押接させ
てクランプし、キャビティより溢れた液状樹脂及び該キ
ャビティ内の残留エアーを金型中央部のキャビティより
金型連通ランナを通じて金型周辺部のキャビティに向か
って押し出して圧縮成形することを特徴とする。また、
モールド金型のキャビティ凹部どうしを連絡する金型連
通ランナが交差する部位には、溢れた液状樹脂を収容可
能なダミーキャビティが形成されていることを特徴とす
る。また、キャビティ凹部の底部を構成するキャビティ
ブロックは、モールド金型がクランプした後、更に上動
可能に設けられていることを特徴する。また、金型中央
部のキャビティブロックは金型周辺部のキャビティブロ
ックより先に上動可能に設けられていることを特徴とす
る。また、被成形品は半導体チップがマトリクス状にリ
ードフレームに搭載されており、インナーリードの一部
が上型のパーティング面を覆うリリースフィルムに押接
されて露出して樹脂封止されることを特徴とする。In the resin sealing device, a parting surface of a mold is covered with a release film, a liquid resin is supplied to a cavity formed in a lower mold in a matrix, and a semiconductor chip is formed in the cavity. In a resin sealing device in which molded articles mounted in a matrix having the same arrangement as the recesses are carried in and compression-molded by the lower mold and the upper mold, the mold cavity is provided with adjacent cavity recesses of the lower mold. A communicating mold runner is formed, and a release film is pressed into contact with the lead of the molded product and clamped, and the liquid resin overflowing from the cavity and the residual air in the cavity are discharged from the cavity at the center of the mold. It is characterized in that it is extruded toward a cavity around the mold through a mold communication runner and compression-molded. Also,
A dummy cavity capable of accommodating the overflowing liquid resin is formed at a portion where the mold communication runners communicating the cavity recesses of the mold die intersect. Further, the cavity block forming the bottom of the cavity concave portion is characterized in that it is further movably provided after the mold is clamped. Further, the cavity block at the center of the mold is provided so as to be able to move upward before the cavity block at the periphery of the mold. In addition, the semiconductor chip is mounted on the lead frame in the form of a matrix, and a part of the inner lead is exposed to the release film that covers the parting surface of the upper die and is exposed and sealed with resin. It is characterized by.

【０００９】[0009]

【発明の実施の形態】以下、本発明に係る樹脂封止方法
及び樹脂封止装置の好適な実施の形態について添付図面
と共に詳述する。本実施例は、被成形品として、リード
フレームに半導体チップがマトリクス状に配置されたＱ
ＦＮタイプの半導体パッケージを圧縮成形により製造す
る樹脂封止方法及び樹脂封止装置について説明する。図
１〜図５は樹脂封止プロセスを示す模式説明図、図６及
び図７は下型のキャビティブロックの移動構成を示す説
明図、図８（ａ）（ｂ）モールド金型に液状樹脂を充填
する前後の状態を示す上視図、図９はリードフレームの
平面図、図１０は樹脂封止後のパッケージを示す平面
図、図１１は図１０のパッケージの裏面側を示す平面
図、図１２は他例に係るモールド金型の平面図、図１３
は他例に係るリードフレームの平面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a resin sealing method and a resin sealing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. In the present embodiment, as a molded article, a semiconductor chip is arranged in a matrix on a lead frame.
A resin sealing method and a resin sealing device for manufacturing an FN type semiconductor package by compression molding will be described. 1 to 5 are schematic explanatory views showing a resin sealing process, FIGS. 6 and 7 are explanatory views showing a moving configuration of a lower cavity block, and FIGS. 8 (a) and 8 (b) show a liquid resin in a mold. FIG. 9 is a plan view showing the package after resin sealing, and FIG. 11 is a plan view showing the back surface side of the package of FIG. 12 is a plan view of a mold according to another example, FIG.
FIG. 9 is a plan view of a lead frame according to another example.

【００１０】先ず、樹脂封止装置の概略構成について図
１〜図８を参照して説明する。図１において、１はモー
ルド金型であり、上型２と下型３とを有する。下型３に
はキャビティ凹部４がマトリクス状（本実施例では４行
４列）に形成されており（図８（ａ）参照）、上型２及
び下型３のパーティング面はリリースフィルム５により
覆われている。この下型３の各キャビティ凹部４には液
状樹脂６が供給され（図８（ｂ）参照）、半導体チップ
７がキャビティ凹部４と同配置のマトリクス状（本実施
例では４行４列）搭載されたリードフレーム８が、半導
体チップ７をキャビティ凹部４に向けて搬入され、下型
３と上型２とでクランプされて圧縮成形される。First, a schematic configuration of a resin sealing device will be described with reference to FIGS. In FIG. 1, reference numeral 1 denotes a molding die, which has an upper die 2 and a lower die 3. In the lower mold 3, cavity concave portions 4 are formed in a matrix (in this embodiment, 4 rows and 4 columns) (see FIG. 8A), and the parting surfaces of the upper mold 2 and the lower mold 3 are formed of a release film 5. Covered by The liquid resin 6 is supplied to each cavity 4 of the lower mold 3 (see FIG. 8B), and the semiconductor chips 7 are mounted in a matrix (four rows and four columns in this embodiment) arranged in the same manner as the cavity 4. The semiconductor chip 7 is carried into the cavity recess 4 and clamped by the lower mold 3 and the upper mold 2 and compression-molded.

【００１１】図８（ａ）において、下型３には、隣接す
るキャビティ凹部４どうしを連絡する金型連通ランナ９
が形成されており、各金型連通ランナ９どうしが交差す
る部位にダミーキャビティ１０が形成されている。この
金型連通ランナ９は、モールド金型１をクランプする際
に、キャビティより溢れた液状樹脂６が金型中央部のキ
ャビティより金型連通ランナ９を通じて金型周辺部のキ
ャビティに向かって押し出される際の樹脂路及びキャビ
ティに残留するエアーのエアーベントとして用いられ
る。各キャビティより溢れ出した液状樹脂６は金型連通
ランナ９及びダミーキャビティ１０へ収容可能になって
いる。In FIG. 8 (a), a lower mold 3 is provided with a mold communication runner 9 for connecting adjacent cavity recesses 4 to each other.
Are formed, and a dummy cavity 10 is formed at a portion where the mold communication runners 9 intersect each other. When the mold communication runner 9 clamps the mold 1, the liquid resin 6 overflowing from the cavity is extruded from the cavity at the center of the mold through the mold communication runner 9 toward the cavity at the periphery of the mold. It is used as an air vent for air remaining in the resin path and cavity at the time. The liquid resin 6 overflowing from each cavity can be accommodated in the mold communication runner 9 and the dummy cavity 10.

【００１２】図１において、下型３にはキャビティ凹部
４がマトリクス状に形成されたキャビティプレート１１
を有している。キャビティプレート１１には、キャビテ
ィ凹部４を形成する仕切りブロック１２及びキャビティ
ブロック１３が設けられている。各キャビティ凹部４の
底部を構成するキャビティブロック１３は上動可能に設
けられている。即ち、図６及び図７に示すように、各キ
ャビティブロック１３はベース部１４に一体に支持され
ており、該ベース部１４は駆動源であるサーボモータ１
５などに回転駆動されるボールネジ１６に連繋して上下
動するようになっている。尚、駆動源は電動モータに限
らずシリンダ等の他の手段を用いてもよい。また、各キ
ャビティブロック１３は個々に上下動可能に支持されて
いても良い。In FIG. 1, a cavity plate 11 in which cavity recesses 4 are formed in a matrix in a lower mold 3 is shown.
have. The cavity plate 11 is provided with a partition block 12 and a cavity block 13 that form the cavity recess 4. The cavity block 13 forming the bottom of each cavity recess 4 is provided so as to be able to move upward. That is, as shown in FIGS. 6 and 7, each cavity block 13 is integrally supported by a base portion 14, and the base portion 14
5 to move up and down in connection with a ball screw 16 that is driven to rotate. The drive source is not limited to the electric motor, and other means such as a cylinder may be used. Further, each cavity block 13 may be individually supported so as to be vertically movable.

【００１３】また、図６に示すように、中央側のキャビ
ティブロック１３はベース部１４に対してコイルスプリ
ング１７により上方に付勢されている。これにより、モ
ールド金型１をクランプする際に、先ず金型中央部のキ
ャビティブロック１３を金型周辺部のキャビティブロッ
ク１３より先に押し上げて金型中央部から金型周辺部へ
向かう樹脂の流れを形成するためである。また、図７に
示すように、モールド金型１をクランプした後、キャビ
ティブロック１３のみをさらに上動させて、キャビティ
凹部４に充填された液状樹脂６を金型中央部より金型周
辺部へ押し出して圧縮成形される。尚、このコイルスプ
リング１７は省略することも可能である。この場合に
は、下型３の金型中央部に液状樹脂６を予め多く供給し
ておいて金型周辺部に向かって溢れ出させるようにする
のが好ましい。As shown in FIG. 6, the cavity block 13 on the center side is urged upward by a coil spring 17 with respect to the base portion 14. Thereby, when clamping the mold 1, first, the cavity block 13 at the center of the mold is pushed up before the cavity block 13 at the periphery of the mold to flow the resin from the center of the mold toward the periphery of the mold. Is formed. Further, as shown in FIG. 7, after clamping the mold 1, only the cavity block 13 is further moved upward to move the liquid resin 6 filled in the cavity recess 4 from the center of the mold to the periphery of the mold. Extruded and compression molded. The coil spring 17 can be omitted. In this case, it is preferable that a large amount of the liquid resin 6 be supplied in advance to the center of the mold of the lower mold 3 so as to overflow toward the periphery of the mold.

【００１４】上型２のパーティング面に吸着保持された
リリースフィルム５は、モールド金型１をクランプした
際にリードフレーム８の裏面側を覆い、リード部（イン
ナーリード）８ａに押接して露出させて樹脂封止する
（図９参照）。また、下型３のキャビティ凹部４を含む
パーティング面にもリリースフィルム５が吸着保持され
ている。下型側のリリースフィルム５は、キャビティ形
状が角形状である場合には仕切りブロック１２とキャビ
ティブロック１３間の隙間を塞ぐため必要があるが、キ
ャビティ形状が丸形状の場合にはリリースフィルム５を
省略することも可能である。リリースフィルム５は、上
型２及び下型３のパーティング面に各々連絡するエアー
吸引路２ａ、３ａより真空吸引されて吸着されている。
図９において、リードフレーム５は、半導体チップ７が
搭載されるダイパッド部８ｂの周囲をインナーリード部
８ａにより囲まれたものがマトリクス状に形成されてい
る。リリースフィルム５は、モールド金型１の加熱温度
に耐えられる耐熱性を有するもので、金型面より容易に
剥離するものであって、柔軟性、伸展性を有するフィル
ム材、例えば、ＰＴＦＥ、ＥＴＦＥ、ＰＥＴ、ＦＥＰ、
フッ素含浸ガラスクロス、ポリプロピレン、ポリ塩化ビ
ニリジン等が好適に用いられる。リリースフィルム５
は、上型２のパーティング面に形成された図示しない吸
着穴よりエアーを吸引することで、吸着保持される。リ
リースフィルム５は、リール間に巻回された長尺状のも
のをリリースフィルム供給機構（図示せず）により連続
してモールド金型１へ供給するようになっていても、或
いは予め短冊状に切断されたものを用いても良い。The release film 5 sucked and held on the parting surface of the upper mold 2 covers the back side of the lead frame 8 when the mold 1 is clamped, and is exposed by being pressed against the lead portion (inner lead) 8a. Then, resin sealing is performed (see FIG. 9). The release film 5 is also suction-held on the parting surface of the lower mold 3 including the cavity recess 4. The release film 5 on the lower mold side needs to close the gap between the partition block 12 and the cavity block 13 when the cavity shape is a square shape, but needs to release the release film 5 when the cavity shape is a round shape. It can be omitted. The release film 5 is sucked by vacuum suction from the air suction passages 2a and 3a communicating with the parting surfaces of the upper mold 2 and the lower mold 3, respectively.
In FIG. 9, the lead frame 5 is formed in a matrix in which a die pad portion 8b on which the semiconductor chip 7 is mounted is surrounded by an inner lead portion 8a. The release film 5 has heat resistance enough to withstand the heating temperature of the mold 1 and is easily peeled off from the mold surface. The release film 5 has flexibility and extensibility, for example, PTFE, ETFE. , PET, FEP,
Fluorine impregnated glass cloth, polypropylene, polyvinylidene chloride and the like are preferably used. Release film 5
Is sucked and held by sucking air from a suction hole (not shown) formed in the parting surface of the upper mold 2. The release film 5 may be continuously supplied to the mold 1 by a release film supply mechanism (not shown) in the form of a long film wound between reels, or may be previously formed into a strip shape. Cut pieces may be used.

【００１５】また、樹脂封止装置には、例えば下型３を
電動モータによりトグル機構などを用いて上下動させて
モールド金型１を開閉する公知の型開閉機構が装備され
ている。また、液状樹脂６は公知のディスペンサを用い
て型開きしたモールド金型１へ進入して各キャビティ凹
部４に供給するか、或いは下型３の金型中央部へ所定量
供給するものとする。The resin sealing device is provided with a known mold opening / closing mechanism for opening and closing the mold 1 by moving the lower mold 3 up and down by an electric motor using a toggle mechanism or the like. Further, the liquid resin 6 enters the opened mold die 1 using a known dispenser and is supplied to each cavity concave portion 4 or supplied to the central portion of the lower die 3 in a predetermined amount.

【００１６】次に、樹脂封止プロセスについて図１〜図
５を参照して説明する。型開きしたモールド金型１の上
型２及び下型３のパーティング面にリリースフィルム５
を各々吸着保持させておく。次に、図２に示すように、
図示しないディスペンサにより、下型３のキャビティ凹
部４に液状樹脂６を充填する。次に、図３に示すよう
に、半導体チップ７が搭載され、該チップの電極部とイ
ンナーリード部８ａとがワイヤボンディングされたリー
ドフレーム８を、チップ面を下向きにしてモールド金型
１の下型３にセットする。このとき、半導体チップ７は
キャビティ凹部４に供給された液状樹脂６に浸漬され
る。Next, the resin sealing process will be described with reference to FIGS. The release film 5 is provided on the parting surfaces of the upper mold 2 and the lower mold 3 of the opened mold 1.
Are respectively adsorbed and held. Next, as shown in FIG.
The liquid resin 6 is filled in the cavity recess 4 of the lower mold 3 by a dispenser (not shown). Next, as shown in FIG. 3, the lead frame 8 on which the semiconductor chip 7 is mounted and the electrode part of the chip and the inner lead part 8a are wire-bonded is placed under the mold 1 with the chip surface facing downward. Set in mold 3. At this time, the semiconductor chip 7 is immersed in the liquid resin 6 supplied to the cavity recess 4.

【００１７】次に、図４に示すように、図示しない型開
閉機構を作動させて下型３を上動させてモールド金型１
をクランプする。このとき、図６に示すように、下型３
の中央部のキャビティブロック１３はベース部１４より
上方に付勢されているので、キャビティ内の余剰の液状
樹脂６や残留エアーは金型中央部のキャビティより金型
周辺部のキャビティに向かって押し出される。次いで、
図５に示すように、サーボモータ１５を作動させてキャ
ビティブロック１３を所定量上動させ（図７参照）、金
型中央部のキャビティより溢れ出した液状樹脂６やキャ
ビティ内の残留エアーは金型連通ランナ９を介して金型
周辺部のキャビティへ押し出される。そして、余剰樹脂
は金型連通ランナ９及びダミーキャビティ１０に収容さ
れ、残留エアーは金型周辺部のダミーキャビティ１０よ
り外部へ排気して、圧縮成形が行われる。Next, as shown in FIG. 4, a lower mold 3 is moved upward by operating a mold opening / closing mechanism (not shown), and
Clamp. At this time, as shown in FIG.
Since the cavity block 13 at the center of the mold is urged upward from the base 14, excess liquid resin 6 and residual air in the cavity are pushed out from the cavity at the center of the mold toward the cavity at the periphery of the mold. It is. Then
As shown in FIG. 5, the servo motor 15 is operated to move the cavity block 13 up by a predetermined amount (see FIG. 7), and the liquid resin 6 overflowing from the cavity at the center of the mold and the residual air in the cavity are removed by the metal. It is extruded through a mold communication runner 9 into a cavity around the mold. The surplus resin is accommodated in the mold communication runner 9 and the dummy cavity 10, and the residual air is exhausted to the outside from the dummy cavity 10 around the mold to perform compression molding.

【００１８】圧縮成形後、モールド金型１を型開きして
リードフレーム８がリリースフィルム５より分離して取
出される。樹脂封止後のリードフレームを図１０及び図
１１に示す。このとき、半導体パッケージ１８の裏面側
はリリースフィルム５に押接されて樹脂封止されている
ので、インナーリード部８ａを確実に露出させることが
でき、樹脂フラッシュを生ずることがない。この後、マ
トリクス状に形成された半導体パッケージ１８は、リー
ドフレーム８に接続されたまま切断装置に搬入され、プ
レスによりインナリード部８ａ及び吊りリード部８ｃが
切断され、半導体パッケージ１８が個片に分離される。After the compression molding, the mold 1 is opened and the lead frame 8 is separated from the release film 5 and taken out. The lead frame after resin sealing is shown in FIGS. At this time, since the back surface of the semiconductor package 18 is pressed against the release film 5 and sealed with the resin, the inner lead portion 8a can be reliably exposed, and no resin flash occurs. Thereafter, the semiconductor package 18 formed in a matrix shape is carried into a cutting device while being connected to the lead frame 8, and the inner lead portion 8a and the suspension lead portion 8c are cut by pressing, and the semiconductor package 18 is separated into individual pieces. Separated.

【００１９】上記樹脂封止方法及び樹脂封止装置によれ
ば、半導体チップ７がマトリクス状に搭載されたリード
フレーム８のインナーリード部８ａの一部が上型２のパ
ーティング面を覆うリリースフィルム５に押接されて露
出して樹脂封止されるため、インナリード裏面に樹脂フ
ラッシュを生ずることなく、しかもキャビティより溢れ
た液状樹脂６及び該キャビティ内の残留エアーを金型中
央部のキャビティより金型連通ランナ９を通じて金型周
辺部のキャビティに向かって押し出して圧縮成形するの
で、高密度マトリクス状に配置されたパッケージに樹脂
を十分行きわたらせて均一に樹脂封止することができ、
量産性を向上させることができる。また、高価な耐熱マ
スキングテープを使用する必要がないので半導体パッケ
ージを安価に生産でき、しかもモールドした後、ダイサ
ーではなくプレスによりパッケージを個片に切断できる
ので生産効率が良い。According to the resin sealing method and the resin sealing apparatus described above, a release film in which a part of the inner lead portion 8a of the lead frame 8 on which the semiconductor chips 7 are mounted in a matrix shape covers the parting surface of the upper die 2. 5 and is exposed and sealed with resin, so that no resin flash occurs on the back surface of the inner lead, and the liquid resin 6 overflowing from the cavity and the residual air in the cavity are removed from the cavity at the center of the mold. Since the resin is extruded toward the cavity at the periphery of the mold through the mold communication runner 9 and compression-molded, the resin can be sufficiently spread over the packages arranged in a high-density matrix, and the resin can be uniformly sealed.
Mass productivity can be improved. In addition, since it is not necessary to use an expensive heat-resistant masking tape, a semiconductor package can be produced at low cost. Further, after molding, the package can be cut into individual pieces by a press instead of a dicer, so that production efficiency is high.

【００２０】上記実施例ではリードフレーム８及びモー
ルド金型１（下型３）が４行４列単位で圧縮成形される
場合について説明したが、これに限定されるものではな
く、増減するのは任意である。更にパッケージを多数個
取りする例について図１２及び図１３を参照して説明す
る。図１２は４行多数列の下型１９を示すもので、図１
３は４行多数列のリードフレーム２０を示すものであ
る。このような、被成形品及び金型の形態を採用するこ
とで、一回のモールドにより製造できるパッケージの数
を増大できるので、生産効率を向上させることができ
る。In the above embodiment, the case where the lead frame 8 and the mold 1 (the lower mold 3) are compression-molded in units of 4 rows and 4 columns has been described. However, the present invention is not limited to this. Optional. Further, an example in which a plurality of packages are taken will be described with reference to FIGS. FIG. 12 shows a lower mold 19 having four rows and many columns.
Reference numeral 3 denotes a lead frame 20 having four rows and many columns. By adopting such a form of a molded article and a mold, the number of packages that can be manufactured by one molding can be increased, so that production efficiency can be improved.

【００２１】以上本発明の好適な実施例について種々述
べてきたが、樹脂封止装置及び樹脂封止方法は上述した
各実施例に限定されるのではなく、例えば被成形品はＱ
ＦＮタイプの半導体パッケージに限らずＳＯＮタイプ等
の他の種類の半導体パッケージであっても良い等、発明
の精神を逸脱しない範囲で多くの改変を施し得るのはも
ちろんである。Although various preferred embodiments of the present invention have been described above, the resin sealing device and the resin sealing method are not limited to the above-described embodiments.
Of course, many modifications can be made without departing from the spirit of the invention, such as not only the FN type semiconductor package but also other types of semiconductor packages such as SON type.

【００２２】[0022]

【発明の効果】本発明に係る、樹脂封止方法及び樹脂封
止装置によれば、半導体チップがマトリクス状に搭載さ
れた被成形品がモールド金型のパーティング面を覆うリ
リースフィルムにリード部が押接されて露出して樹脂封
止されるため、該リード部裏面側に樹脂フラッシュを生
ずることなく、しかもキャビティより溢れた液状樹脂及
び該キャビティ内の残留エアーを金型中央部のキャビテ
ィより金型連通ランナを通じて金型周辺部のキャビティ
に向かって押し出して圧縮成形するので、高密度マトリ
クス状に配置されたパッケージに樹脂を十分行きわたら
せて均一に樹脂封止することができ、量産性を向上させ
ることができる。また、高価な耐熱マスキングテープを
使用する必要がないのでパッケージを安価に生産でき、
しかもモールドした後、ダイサーではなくプレスにより
パッケージを個片に切断できるので生産効率も向上させ
ることができる。According to the resin sealing method and the resin sealing apparatus according to the present invention, a molded product on which semiconductor chips are mounted in a matrix form has a lead portion on a release film covering a parting surface of a mold. Is pressed and exposed and sealed with resin, so that no resin flash occurs on the back side of the lead portion, and the liquid resin overflowing from the cavity and residual air in the cavity are removed from the cavity at the center of the mold. Since it is extruded toward the cavity around the mold through the mold communication runner and compression-molded, it is possible to sufficiently spread the resin in the package arranged in a high-density matrix and to uniformly seal the resin. Can be improved. Also, since there is no need to use expensive heat-resistant masking tape, packages can be produced at low cost,
In addition, after molding, the package can be cut into individual pieces by pressing instead of a dicer, so that production efficiency can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】樹脂封止プロセスを示す模式説明図である。FIG. 1 is a schematic explanatory view showing a resin sealing process.

【図２】樹脂封止プロセスを示す模式説明図である。FIG. 2 is a schematic explanatory view showing a resin sealing process.

【図３】樹脂封止プロセスを示す模式説明図である。FIG. 3 is a schematic explanatory view showing a resin sealing process.

【図４】樹脂封止プロセスを示す模式説明図である。FIG. 4 is a schematic explanatory view showing a resin sealing process.

【図５】樹脂封止プロセスを示す模式説明図である。FIG. 5 is a schematic explanatory view showing a resin sealing process.

【図６】下型のキャビティブロックの移動構成を示す説
明図である。FIG. 6 is an explanatory view showing a moving configuration of a lower cavity block.

【図７】下型のキャビティブロックの移動構成を示す説
明図である。FIG. 7 is an explanatory diagram showing a moving configuration of a lower cavity block.

【図８】モールド金型に液状樹脂を充填する前後の状態
を示す上視図である。FIG. 8 is a top view showing a state before and after filling a mold resin with a liquid resin.

【図９】リードフレームの平面図である。FIG. 9 is a plan view of a lead frame.

【図１０】樹脂封止後のパッケージを示す平面図であ
る。FIG. 10 is a plan view showing the package after resin sealing.

【図１１】図１０のパッケージの裏面側を示す平面図で
ある。11 is a plan view showing the back surface side of the package of FIG. 10;

【図１２】他例に係るモールド金型の平面図である。FIG. 12 is a plan view of a mold according to another example.

【図１３】他例に係るリードフレームの平面図である。FIG. 13 is a plan view of a lead frame according to another example.

【符号の説明】[Explanation of symbols]

１ モールド金型 ２ 上型 ３、１９ 下型 ４ キャビティ凹部 ５ リリースフィルム ６ 液状樹脂 ７ 半導体チップ ８、２０ リードフレーム ８ａ インナーリード部 ８ｂ ダイパッド部 ８ｃ 吊りリード部 ９ 金型連通ランナ １０ ダミーキャビティ １１ キャビティプレート １２ 仕切りブロック １３ キャビティブロック １４ ベース部 １５ サーボモータ １６ ボールネジ １７ コイルスプリング １８ 半導体パッケージ DESCRIPTION OF SYMBOLS 1 Mold 2 Upper mold 3, 19 Lower mold 4 Cavity concave part 5 Release film 6 Liquid resin 7 Semiconductor chip 8, 20 Lead frame 8a Inner lead part 8b Die pad part 8c Suspended lead part 9 Die communication runner 10 Dummy cavity 11 Cavity Plate 12 Partition block 13 Cavity block 14 Base 15 Servo motor 16 Ball screw 17 Coil spring 18 Semiconductor package

フロントページの続き Ｆターム(参考） 4F202 AC05 AD02 AD08 AG01 AG03 AH37 CA09 CB01 CB12 CB17 CK11 CK52 CL02 CN01 CP01 CQ01 CQ05 4F204 AC05 AD02 AD08 AG01 AG03 AH37 FA01 FA16 FB01 FB12 FB17 FE06 FE10 FF01 FF05 FF06 FG01 FN11 FN12 FQ01 FQ38 5F061 AA01 CA01 CA21 DA04 DA06 EA02 Continued on front page F term (reference) 4F202 AC05 AD02 AD08 AG01 AG03 AH37 CA09 CB01 CB12 CB17 CK11 CK52 CL02 CN01 CP01 CQ01 CQ05 4F204 AC05 AD02 AD08 AG01 AG03 AH37 FA01 FA16 FB01 FB12 FB17 FE06 FE10 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F01 F06 AA01 CA01 CA21 DA04 DA06 EA02

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】 下型にキャビティ凹部がマトリクス状に
形成されたモールド金型のパーティング面をリリースフ
ィルムにより覆い、前記キャビティ凹部に液状樹脂を供
給し、半導体チップが前記キャビティ凹部と同配置でマ
トリクス状に搭載された被成形品を前記下型へ搬入し、
該下型と上型とでクランプして圧縮成形する樹脂封止方
法において、 前記モールド金型には、前記下型の隣接するキャビティ
凹部どうしを連絡する金型連通ランナが形成されてお
り、前記被成形品のリード部に前記リリースフィルムを
押接させてクランプし、キャビティより溢れた前記液状
樹脂及び該キャビティ内の残留エアーを金型中央部のキ
ャビティより前記金型連通ランナを通じて金型周辺部の
キャビティに向かって押し出して圧縮成形することを特
徴する樹脂封止方法。1. A parting surface of a mold having a cavity formed in a matrix in a lower mold is covered with a release film, a liquid resin is supplied to the cavity, and a semiconductor chip is arranged in the same arrangement as the cavity. The molded articles mounted in a matrix are carried into the lower mold,
In the resin sealing method in which the lower mold and the upper mold are clamped and compression molded, the mold mold is formed with a mold communication runner that connects adjacent cavity recesses of the lower mold. The release film is pressed against and clamped to the lead portion of the molded product, and the liquid resin overflowing from the cavity and the residual air in the cavity are removed from the cavity at the center of the mold through the mold communication runner to the periphery of the mold. A resin sealing method characterized in that the resin is extruded toward a cavity and compression molded. 【請求項２】 前記キャビティ凹部どうしを連絡する金
型連通ランナが交差する部位にはダミーキャビティが形
成されており、キャビティより溢れた液状樹脂を収容し
て樹脂封止することを特徴とする請求項１記載の樹脂封
止方法。2. A dummy cavity is formed at a portion where the mold communication runners connecting the cavity recesses intersect with each other, and a liquid resin overflowing from the cavity is housed and sealed with the resin. Item 4. The resin sealing method according to Item 1. 【請求項３】 前記下型にマトリクス状に形成されたキ
ャビティ凹部の底部を構成するキャビティブロックは可
動に設けられており、モールド金型をクランプする際
に、先ず金型中央側のキャビティブロックを金型周辺部
側のキャビティブロックより先に押し上げて樹脂封止す
ることを特徴とする請求項１記載の樹脂封止方法。3. A cavity block constituting a bottom of a cavity recess formed in a matrix in the lower mold is movably provided. When clamping a mold, first, a cavity block on the center of the mold is removed. The resin sealing method according to claim 1, wherein the resin is sealed by pushing up the cavity block on the peripheral side of the mold. 【請求項４】 前記下型にマトリクス状に形成されたキ
ャビティ凹部のうち金型中央部のキャビティ凹部に液状
樹脂を溢れるように供給してモールド金型をクランプす
ることにより、液状樹脂を金型中央部のキャビティより
前記金型連通ランナを通じて金型周辺部のキャビティに
向かって押し出すように樹脂封止することを特徴とする
請求項１記載の樹脂封止方法。4. The liquid resin is supplied to the cavity concave portion at the center of the mold so that the liquid resin overflows into the cavity concave portion formed at the center of the mold among the cavity concave portions formed in a matrix on the lower mold, and the mold resin is clamped, so that the liquid resin is molded. 2. The resin sealing method according to claim 1, wherein the resin is sealed so as to be extruded from a cavity at a central portion toward a cavity at a peripheral portion of the mold through the mold communication runner. 【請求項５】 前記被成形品は半導体チップがマトリク
ス状にリードフレームに搭載されており、インナーリー
ドの一部が前記上型のパーティング面を覆うリリースフ
ィルムに押接されて露出して樹脂封止されることを特徴
とする請求項１、２、３又は４記載の樹脂封止方法。5. The molded article has a semiconductor chip mounted on a lead frame in a matrix, and a part of the inner lead is exposed by being pressed against a release film covering the parting surface of the upper die. 5. The resin sealing method according to claim 1, wherein the resin is sealed. 【請求項６】 モールド金型のパーティング面がリリー
スフィルムにより覆われ、下型にマトリクス状に形成さ
れたキャビティ凹部に液状樹脂が供給されると共に、半
導体チップが前記キャビティ凹部と同配置のマトリクス
状に搭載された被成形品が搬入されて前記下型と上型と
で圧縮成形される樹脂封止装置において、 前記モールド金型には、前記下型の隣接するキャビティ
凹部どうしを連絡する金型連通ランナが形成されてお
り、前記被成形品のリード部にリリースフィルムを押接
させてクランプし、キャビティより溢れた前記液状樹脂
及び該キャビティ内の残留エアーを金型中央部のキャビ
ティより前記金型連通ランナを通じて金型周辺部のキャ
ビティに向かって押し出して圧縮成形することを特徴と
する樹脂封止装置。6. A mold in which a parting surface of a mold is covered with a release film, a liquid resin is supplied to cavity recesses formed in a matrix on a lower mold, and a semiconductor chip is arranged in the same matrix as the cavity recesses. In a resin sealing device in which a molded article mounted in a shape is carried in and compression-molded by the lower mold and the upper mold, the mold mold is provided with a metal that communicates adjacent cavity recesses of the lower mold. A mold communication runner is formed, and a release film is pressed against the lead portion of the molded article and clamped, and the liquid resin overflowing from the cavity and the residual air in the cavity are discharged from the cavity at the center of the mold through the cavity. A resin sealing device characterized by being extruded toward a cavity around a mold through a mold communication runner and compression-molded. 【請求項７】 前記モールド金型のキャビティ凹部どう
しを連絡する金型連通ランナが交差する部位には、溢れ
た液状樹脂を収容可能なダミーキャビティが形成されて
いることを特徴とする請求項６記載の樹脂封止装置。7. A dummy cavity capable of accommodating an overflowing liquid resin is formed at a portion where the mold communication runners connecting the cavity recesses of the mold die intersect. The resin sealing device as described in the above. 【請求項８】 前記キャビティ凹部の底部を構成するキ
ャビティブロックは、前記モールド金型がクランプした
後、更に上動可能に設けられていることを特徴する請求
項６記載の樹脂封止装置。8. The resin sealing device according to claim 6, wherein the cavity block forming the bottom of the cavity concave portion is further movably provided after the mold is clamped. 【請求項９】 金型中央部の前記キャビティブロックは
金型周辺部の前記キャビティブロックより先に上動可能
に設けられていることを特徴とする請求項８記載の樹脂
封止装置。9. The resin sealing device according to claim 8, wherein the cavity block at the center of the mold is provided so as to be able to move upward before the cavity block at the periphery of the mold. 【請求項１０】 前記被成形品は半導体チップがマトリ
クス状にリードフレームに搭載されており、インナーリ
ードの一部が前記上型のパーティング面を覆うリリース
フィルムに押接されて露出して樹脂封止されることを特
徴とする請求項６、７、８又は９記載の樹脂封止装置。10. The molded article has a semiconductor chip mounted on a lead frame in a matrix, and a part of inner leads are exposed by being pressed against a release film covering a parting surface of the upper die. The resin sealing device according to claim 6, wherein the resin sealing device is sealed.
JP2000220791A 2000-07-21 2000-07-21 Resin sealing method and resin sealing device Expired - Lifetime JP4484329B2 (en)

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