JP2002026469A - Circuit board having directly cooling structure - Google Patents
Circuit board having directly cooling structureInfo
- Publication number
- JP2002026469A JP2002026469A JP2000209276A JP2000209276A JP2002026469A JP 2002026469 A JP2002026469 A JP 2002026469A JP 2000209276 A JP2000209276 A JP 2000209276A JP 2000209276 A JP2000209276 A JP 2000209276A JP 2002026469 A JP2002026469 A JP 2002026469A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- ceramic substrate
- circuit
- cooling structure
- honeycomb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、直接冷却構造回路
基板回路に関する。詳しくは、回路の形成されたセラミ
ックス基板の反対面を冷媒と直接接触させることによっ
て、モジュールの温度調節を容易に行えるようにした回
路基板に関する。The present invention relates to a circuit board circuit having a direct cooling structure. More specifically, the present invention relates to a circuit board in which the temperature of a module can be easily adjusted by bringing the opposite surface of a ceramic substrate on which a circuit is formed into direct contact with a refrigerant.
【０００２】[0002]
【従来の技術】半導体素子等の電子部品を内装したモジ
ュールは、近来のエレクトロニクス技術の発展に伴い高
出力化が進む中、今日の重要課題は、小型軽量化モジュ
ールにおいて、安定した要求性能を満たすための冷却方
法である。このためには、電子部品から発生した熱を効
率良く速やかに系外に逃がすことの他に、電子部品が良
好に作動する温度にモジュール温度を保持することが必
要となる。2. Description of the Related Art As the output of a module in which electronic components such as semiconductor elements are mounted is increasing with the recent development of electronics technology, an important issue today is to satisfy a stable required performance in a small and lightweight module. Cooling method. For this purpose, it is necessary to efficiently and quickly release the heat generated from the electronic components to the outside of the system, and also to maintain the module temperature at a temperature at which the electronic components operate well.
【０００３】そこで、従来のモジュールの冷却構造は、
冷却水の通水された冷却板をモジュールに当接させる間
接方式であったため（例えば特開平７−１５４０８２号
公報）、応答が遅れて十分な温度調節ができにくい問題
があった。これを解決するには、冷却水等の冷媒を直接
モジュールと接触させればよいが、その具体的構造を示
した先行技術は見いだし得ない。Therefore, the cooling structure of the conventional module is as follows.
Since the indirect system in which the cooling plate through which the cooling water flows is brought into contact with the module (for example, Japanese Patent Application Laid-Open No. 7-154082), there was a problem that the response was delayed and sufficient temperature adjustment could not be performed. To solve this, a coolant such as cooling water may be brought into direct contact with the module, but no prior art showing the specific structure can be found.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、上記に鑑み
てなされたものでり、その目的は、モジュールの温度調
節を容易とするため、セラミックス基板の表面に回路を
形成させた回路基板において、その裏面を、放熱金属板
等の介在物を介さないで、直接、冷媒を接触させるよう
にした構造の回路基板を提供することである。SUMMARY OF THE INVENTION The present invention has been made in view of the above, and an object of the present invention is to provide a circuit board having a circuit formed on the surface of a ceramic substrate in order to facilitate temperature control of the module. It is another object of the present invention to provide a circuit board having a structure in which a back surface is directly brought into contact with a refrigerant without an intervening member such as a heat-dissipating metal plate.
【０００５】[0005]
【課題を解決するための手段】すなわち、本発明は、回
路（２）を表面に有するセラミックス基板（３）の裏面
に、冷媒と直接流通接触できるように、ハウジング
（４）されていることを特徴とする直接冷却構造回路基
板である。また、本発明は、ハニカム形状セラミックス
基板（５）の少なくとも一方の表面に回路（２）が形成
されてなることを特徴とする回路基板である。この回路
基板において、セラミックス基板のハニカム孔に冷媒が
流通されるものであることを特徴とする直接冷却構造の
回路基板である。That is, the present invention provides a housing (4) on the back surface of a ceramic substrate (3) having a circuit (2) on the front surface so as to be in direct flow contact with a refrigerant. This is a circuit board with a direct cooling structure. Further, the present invention is a circuit board characterized in that a circuit (2) is formed on at least one surface of a honeycomb-shaped ceramic substrate (5). In this circuit board, a refrigerant is circulated through the honeycomb holes of the ceramic substrate. The circuit board has a direct cooling structure.
【０００６】[0006]
【発明の実施の形態】以下、本発明を実施態様の図面に
基づいて更に詳しく説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings of embodiments.
【０００７】図１、図２は、いずれも本発明の回路基板
の一例を示す概略断面図であり、１は半導体、２は回
路、３はセラミックス基板、４はハウジング、５はセラ
ミックス基板のうち、特にハニカム形状セラミックス基
板である。FIGS. 1 and 2 are schematic cross-sectional views each showing an example of a circuit board of the present invention, wherein 1 is a semiconductor, 2 is a circuit, 3 is a ceramic substrate, 4 is a housing, and 5 is a ceramic substrate. In particular, it is a honeycomb-shaped ceramic substrate.
【０００８】セラミックス基板に回路を形成させるに
は、種々の方法があるが、本発明においては、導電性ペ
ーストを回路パターンに描いた後、乾燥・焼結する厚膜
ペースト法、金属回路パターンをセラミックス基板に接
合するパターン搭載法、金属板をセラミックス基板に接
合した後、回路パターンをエッチングによって形成させ
るエッチング法等、を採用することができる（たとえ
ば、国際公開ＷＯ９１／１６８０５公報参照）。There are various methods for forming a circuit on a ceramic substrate. In the present invention, a thick film paste method in which a conductive paste is drawn into a circuit pattern and then dried and sintered, and a metal circuit pattern is used. A pattern mounting method of bonding to a ceramic substrate, an etching method of forming a circuit pattern by etching after bonding a metal plate to a ceramic substrate, and the like can be adopted (for example, see International Publication WO 91/16805).
【０００９】そして、金属回路パターン又は金属板とセ
ラミックス基板との接合は、硫化銅を用いる方法、セラ
ミックス基板をメタライズしてから接合する方法、表面
を酸化処理した窒化アルミニウム基板と銅板とを直接接
触させ共晶を形成させるＤＢＣ法（例えば特開昭５６−
１６３０９３号公報）、活性金属と呼ばれているチタ
ン、ジルコニウム、ハフニウム等のＩＶ族元素金属を
銅、銀、銀−銅合金等のろう材に含有させた接合材を用
いる活性金属ろう付け法（例えば特開昭６０−１７７６
３４号公報）等、によって行うことができる。[0009] The metal circuit pattern or metal plate and the ceramic substrate are joined by a method using copper sulfide, a method of metallizing the ceramic substrate, and then joining the aluminum nitride substrate whose surface is oxidized to the copper plate. DBC method for forming a eutectic
No. 163093), an active metal brazing method using a joining material containing a group IV element metal called titanium, zirconium, hafnium or the like in a brazing material such as copper, silver or a silver-copper alloy ( For example, JP-A-60-1776
No. 34 gazette).
【００１０】本発明で使用されるセラミックス基板の材
質としては、炭化ケイ素、アルミナ、ベリリア、窒化ケ
イ素、窒化アルミニウム等をあげることができるが、中
でも高出力モジュールの場合には、熱履歴に対する信頼
性を十分にしておくため、熱伝導率５０Ｗ／ｍＫ以上の
窒化アルミニウム又は窒化ケイ素が好適となる。熱伝導
率が５０Ｗ／ｍＫ未満のセラミックス基板では、高出力
モジュールになるほど、その温度管理が困難となる。セ
ラミックス基板の厚みは、０．２〜３ｍｍが一般的であ
る。このようなセラミックス基板は、市販品があるの
で、それを用いることができる。Examples of the material of the ceramic substrate used in the present invention include silicon carbide, alumina, beryllia, silicon nitride, aluminum nitride and the like. In order to make the thermal conductivity sufficient, aluminum nitride or silicon nitride having a thermal conductivity of 50 W / mK or more is suitable. In the case of a ceramic substrate having a thermal conductivity of less than 50 W / mK, the temperature control becomes more difficult as the module becomes higher in power. The thickness of the ceramic substrate is generally 0.2 to 3 mm. Since such a ceramic substrate is commercially available, it can be used.
【００１１】セラミックス基板が図２に示されるよう
に、ハニカム形状であるものは、セラミックス粉末、焼
結助剤、有機バインダーを含む周知の混合物をハニカム
形状に押し出し成形し、脱バインダー後焼成することに
よって製造することができる（例えば特公昭６０−３１
８００号公報、特開平１０−３２８３４３号公報）。ハ
ニカム孔の形状は、四角、丸、三角等制限するものでは
ない。また、孔数についても制限するものではない。脱
バインダ−は、通常、窒素中又は真空中で加熱処理する
ことによって行われる。As shown in FIG. 2, when the ceramic substrate has a honeycomb shape, a well-known mixture containing ceramic powder, a sintering aid, and an organic binder is extruded into a honeycomb shape, followed by firing after removing the binder. (For example, Japanese Patent Publication No. 60-31).
800, JP-A-10-328343). The shape of the honeycomb hole is not limited to a square, a circle, a triangle, or the like. Also, the number of holes is not limited. The binder is usually removed by heat treatment in nitrogen or vacuum.
【００１２】一方、回路の材質は、銅又はその合金、ア
ルミニウム又はその合金が一般的であるが、これに限ら
れることはない。回路の厚みは、通常、セラミックス基
板のそれよりも薄く設計される。On the other hand, the material of the circuit is generally copper or its alloy, aluminum or its alloy, but is not limited to this. The thickness of the circuit is usually designed to be thinner than that of the ceramic substrate.
【００１３】本発明の特徴は、上記回路基板の冷却構造
にある。従来の放熱構造は、セラミックス基板の裏面に
更に放熱金属板を貼り、それをヒートシンクに取り付け
た構造であり、また従来の水冷式構造は、セラミックス
基板の裏面に冷却板を当接し、その冷却板に通水するな
どして冷却板を冷却する間接式構造であった。A feature of the present invention resides in the above-described circuit board cooling structure. The conventional heat dissipating structure is a structure in which a heat dissipating metal plate is further attached to the back surface of the ceramic substrate and attached to a heat sink. It was an indirect structure that cooled the cooling plate by passing water through it.
【００１４】これに対し、本発明の冷却構造は、図１に
示されるように、セラミックス基板３の裏面にハウジン
グ４を設け、そのハウジング内に水等の冷媒がセラミッ
クス基板の裏面と直接接触して流通できるようにしたも
のである。図示してないが、ハウジングは小部屋に分割
されていてもよい。On the other hand, in the cooling structure of the present invention, as shown in FIG. 1, a housing 4 is provided on a back surface of a ceramic substrate 3, and a coolant such as water is directly in contact with the back surface of the ceramic substrate in the housing. It is made available for distribution. Although not shown, the housing may be divided into small rooms.
【００１５】ハウジングの材質は、上記セラミックス、
銅、アルミニウム、ステンレス等の金属、各種プラスチ
ックスのいずれであってもよく、またこれらの材料を適
宜組み合わせた構造であってもよい。ハウジングの形成
は、Ｏリング等のパッキングを用いたネジ止め等によっ
て、セラミックス裏面にそれを取り付けることによって
行うことができる。The material of the housing is the above ceramics,
It may be any of metals such as copper, aluminum and stainless steel, and various plastics, and may have a structure in which these materials are appropriately combined. The housing can be formed by attaching it to the back surface of the ceramic by screwing or the like using packing such as an O-ring.
【００１６】図２に示されたハニカム形状のセラミック
ス基板によれば、ハニカム構造体の上部にセラミックス
基板の役割を、またそれ以外の部分にハウジングの役割
を担わせることができるので、ハニカム孔に水等の冷媒
を流通させる場合は、冷却構造一体型回路基板となる。
この構造によれば、回路基板とハウジングとを組み立て
る手間が省ける。According to the honeycomb-shaped ceramic substrate shown in FIG. 2, the upper portion of the honeycomb structure can serve as the ceramic substrate and the other portions can serve as the housing. When a coolant such as water is allowed to flow, a cooling structure integrated circuit board is used.
According to this structure, the labor for assembling the circuit board and the housing can be omitted.
【００１７】本発明においては、ハウジング４又はハニ
カム形状セラミックス基板５の下面（裏面）に、更に回
路を形成させた構造とすることもできる。In the present invention, a structure in which a circuit is further formed on the lower surface (back surface) of the housing 4 or the honeycomb-shaped ceramic substrate 5 may be employed.
【００１８】[0018]
【実施例】以下、実施例をあげて更に具体的本発明を説
明する。EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples.
【００１９】実施例１ 市販窒化アルミニウム基板（厚み１ｍｍ）にアルミニウ
ム回路をろう材で接合形成させ、その上面に半導体（１
３ｍｍ×１３ｍｍ）を半田付けし、ワイヤボンディング
をした。窒化アルミニウム基板の裏面にアルミニウム製
ハウジングをＯリングとネジを用いて固定し、図１に示
される直接冷却構造回路基板を作製した。Example 1 An aluminum circuit was joined to a commercially available aluminum nitride substrate (thickness: 1 mm) with a brazing material.
3 mm x 13 mm) was soldered and wire-bonded. An aluminum housing was fixed to the back surface of the aluminum nitride substrate using an O-ring and a screw to produce a circuit board having a direct cooling structure shown in FIG.
【００２０】得られた回路基板のハウジング内に通水し
たところ、何のトラブルもなくそれが行え、水量の調節
も容易であった。また、半導体に負荷をかけ規定温度範
囲内に保持する試験を行ったところ、それが可能であっ
た。When water was passed through the housing of the obtained circuit board, it could be performed without any trouble, and the amount of water was easily adjusted. In addition, a test was performed in which a load was applied to the semiconductor and the temperature was maintained within a specified temperature range, and it was possible.
【００２１】実施例２ 質量基準で、窒化アルミニウム粉末９６部、イットリア
粉末４部、有機バインダー（メチルセルロース）６部、
可塑剤５部を含む混練物を、幅６０ｍｍ×高さ５．４ｍ
ｍ（肉厚１．２ｍｍ）、ハニカム孔数１６個のハニカム
形状に押し出し成形した後、脱バインダー後、窒素雰囲
気下、温度１８００℃で焼成して、ハニカム形状窒化ア
ルミニウム基板を製造した。Example 2 96 parts of aluminum nitride powder, 4 parts of yttria powder, 6 parts of organic binder (methylcellulose),
A kneaded product containing 5 parts of a plasticizer is weighed 60 mm × 5.4 m in height.
After extrusion-molding into a honeycomb shape having a thickness of m (1.2 mm in thickness) and 16 honeycomb holes, the binder was removed, and then fired at a temperature of 1800 ° C. in a nitrogen atmosphere to produce a honeycomb-shaped aluminum nitride substrate.
【００２２】得られたハニカム形状窒化アルミニウム基
板の表面に、銅回路を活性金属ろう材で接合形成し、そ
の上面に半導体（１３ｍｍ×１３ｍｍ）を半田付けし、
ワイヤボンディングをして、図２に示されるような直接
冷却構造回路基板を作製した。ハニカム孔に通水したと
ころ、何のトラブルもなくそれが行え、水量の調節も容
易であった。また、半導体に負荷をかけ規定温度範囲内
に保持する試験を行ったところ、それが可能であった。On the surface of the obtained honeycomb-shaped aluminum nitride substrate, a copper circuit is bonded and formed with an active metal brazing material, and a semiconductor (13 mm × 13 mm) is soldered on the upper surface thereof.
By performing wire bonding, a circuit board having a direct cooling structure as shown in FIG. 2 was produced. When water was passed through the honeycomb holes, it could be performed without any trouble, and the amount of water was easily adjusted. In addition, a test was performed in which a load was applied to the semiconductor and the temperature was maintained within a specified temperature range, and it was possible.
【００２３】[0023]
【発明の効果】本発明によれば、セラミックス基板の裏
面を、放熱金属板、冷却板等の介在物を介することな
く、直接、水等の冷媒と接触可能にした直接冷却構造の
回路基板が提供される。According to the present invention, there is provided a circuit board having a direct cooling structure in which the back surface of a ceramic substrate can be brought into direct contact with a coolant such as water without intervening an intervening material such as a radiating metal plate or a cooling plate. Provided.
【図１】本発明の直接冷却構造回路基板の一例を示す概
略断面図。FIG. 1 is a schematic sectional view showing an example of a circuit board having a direct cooling structure according to the present invention.
【図２】本発明の別の直接冷却構造回路基板の一例を示
す概略断面図。FIG. 2 is a schematic sectional view showing an example of another circuit board having a direct cooling structure of the present invention.
１ 半導体 ２ 回路 ３ セラミックス基板 ４ ハウジング ５ ハニカム形状セラミックス基板 DESCRIPTION OF SYMBOLS 1 Semiconductor 2 Circuit 3 Ceramic substrate 4 Housing 5 Honeycomb-shaped ceramic substrate
フロントページの続き (72)発明者 岩元 豪 福岡県大牟田市新開町１ 電気化学工業株 式会社大牟田工場内 Ｆターム(参考） 5E322 AA05 AA11 FA01 5E338 AA05 AA18 BB05 BB16 BB17 BB63 BB71 BB75 CC01 CD11 EE02 5F036 AA01 BA10 BA23 BB08 BB41Continued on the front page (72) Inventor Go Iwamoto 1 Shinkaicho, Omuta-shi, Fukuoka Prefecture F-term in the Omuta Plant of Electrochemical Industry Co., Ltd. BA10 BA23 BB08 BB41
Claims (3)
基板（３）の裏面が、冷媒と直接流通接触できるよう
に、ハウジング（４）されていることを特徴とする直接
冷却構造回路基板。1. A circuit board having a direct cooling structure, characterized in that a housing (4) is provided so that a back surface of a ceramic substrate (3) having a circuit (2) on a front surface can be in direct flow contact with a refrigerant.
少なくとも一方の表面に回路（２）が形成されてなるこ
とを特徴とする回路基板。2. A circuit board comprising a circuit board (2) formed on at least one surface of a honeycomb-shaped ceramic substrate (5).
に、冷媒が流通されるものであることを特徴とする直接
冷却構造回路基板。3. A circuit board having a direct cooling structure, wherein a refrigerant is circulated through the honeycomb holes of the circuit board according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000209276A JP2002026469A (en) | 2000-07-11 | 2000-07-11 | Circuit board having directly cooling structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000209276A JP2002026469A (en) | 2000-07-11 | 2000-07-11 | Circuit board having directly cooling structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002026469A true JP2002026469A (en) | 2002-01-25 |
Family
ID=18705709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000209276A Pending JP2002026469A (en) | 2000-07-11 | 2000-07-11 | Circuit board having directly cooling structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002026469A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011058436A2 (en) * | 2009-11-10 | 2011-05-19 | Dsem Holdings Sdn. Bhd. | Circuit board forming diffusion bonded wall of vapor chamber |
| WO2011125344A1 (en) * | 2010-04-06 | 2011-10-13 | 株式会社アテクト | Substrate and method for manufacturing substrate |
| JP2013048204A (en) * | 2011-07-28 | 2013-03-07 | Kyocera Corp | Passage member, heat exchanger using passage member, electronic component device, and semiconductor manufacturing apparatus |
| WO2013088864A1 (en) * | 2011-12-12 | 2013-06-20 | 株式会社 豊田自動織機 | Semiconductor device |
| US20160081178A1 (en) * | 2014-09-15 | 2016-03-17 | Nicholas Michael D'Onofrio | Liquid Cooled Metal Core Printed Circuit Board |
| DE102018104509A1 (en) | 2017-04-14 | 2018-10-18 | Fuji Electric Co., Ltd. | Semiconductor device |
| US10971431B2 (en) | 2018-05-30 | 2021-04-06 | Fuji Electric Co., Ltd. | Semiconductor device, cooling module, power converting device, and electric vehicle |
-
2000
- 2000-07-11 JP JP2000209276A patent/JP2002026469A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011058436A2 (en) * | 2009-11-10 | 2011-05-19 | Dsem Holdings Sdn. Bhd. | Circuit board forming diffusion bonded wall of vapor chamber |
| WO2011058436A3 (en) * | 2009-11-10 | 2011-11-10 | Dsem Holdings Sdn. Bhd. | Circuit board forming diffusion bonded wall of vapor chamber |
| WO2011125344A1 (en) * | 2010-04-06 | 2011-10-13 | 株式会社アテクト | Substrate and method for manufacturing substrate |
| JP2011222624A (en) * | 2010-04-06 | 2011-11-04 | Atect Corp | Substrate and method for manufacturing the same |
| JP2013048204A (en) * | 2011-07-28 | 2013-03-07 | Kyocera Corp | Passage member, heat exchanger using passage member, electronic component device, and semiconductor manufacturing apparatus |
| WO2013088864A1 (en) * | 2011-12-12 | 2013-06-20 | 株式会社 豊田自動織機 | Semiconductor device |
| US20160081178A1 (en) * | 2014-09-15 | 2016-03-17 | Nicholas Michael D'Onofrio | Liquid Cooled Metal Core Printed Circuit Board |
| US9686887B2 (en) * | 2014-09-15 | 2017-06-20 | Nicholas Michael D'Onofrio | Liquid cooled metal core printed circuit board |
| EP3195711A4 (en) * | 2014-09-15 | 2018-08-29 | D'Onofrio, Nicholas, Michael | Liquid cooled metal core printed circuit board |
| DE102018104509A1 (en) | 2017-04-14 | 2018-10-18 | Fuji Electric Co., Ltd. | Semiconductor device |
| US11201121B2 (en) | 2017-04-14 | 2021-12-14 | Fuji Electric Co., Ltd | Semiconductor device |
| US10971431B2 (en) | 2018-05-30 | 2021-04-06 | Fuji Electric Co., Ltd. | Semiconductor device, cooling module, power converting device, and electric vehicle |
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