JP2002019129A - Method for manufacturing ink jet head - Google Patents
Method for manufacturing ink jet headInfo
- Publication number
- JP2002019129A JP2002019129A JP2000207870A JP2000207870A JP2002019129A JP 2002019129 A JP2002019129 A JP 2002019129A JP 2000207870 A JP2000207870 A JP 2000207870A JP 2000207870 A JP2000207870 A JP 2000207870A JP 2002019129 A JP2002019129 A JP 2002019129A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- jet head
- temperature
- ink jet
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14411—Groove in the nozzle plate
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば３枚の基板
を積層してなるインクジェットヘッド、特に中間の基板
に形成された振動板に絶縁膜を施すインクジェットヘッ
ドの製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an ink jet head having three substrates laminated, for example, an ink jet head in which a diaphragm formed on an intermediate substrate is provided with an insulating film.
【０００２】[0002]
【従来の技術】従来より知られているインクジェットヘ
ッドには、中間の基板の上面に接合された基板の面部に
設けたノズル孔からインク液滴を吐出させるフェイスイ
ジェクトタイプ、中間の基板の端部に設けたノズル孔か
らインク液滴を吐出させるエッジイジェクトタイプのも
のがあるが、何れのタイプも３枚の基板を重ねて接合し
た積層構造となっている。2. Description of the Related Art A conventionally known ink jet head includes a face-eject type in which ink droplets are ejected from nozzle holes formed in a surface portion of a substrate joined to the upper surface of an intermediate substrate, and an end portion of the intermediate substrate. There is an edge-ejection type in which an ink droplet is ejected from a nozzle hole provided in each of the above-mentioned types. Each type has a laminated structure in which three substrates are overlapped and joined.
【０００３】例えば、フェイスイジェクトタイプの場
合、中間の基板は、Ｓｉ基板からなり、各底壁を振動板
とする凹部状の吐出室と、各吐出室の後部にそれぞれ設
けられたインク流入口用のオリフィスと、各オリフィス
を通じてそれぞれの吐出室にインクを供給する凹部状の
リザーバーとが形成されており、この基板の表面には絶
縁膜が施されている。絶縁膜は、インクジェット駆動時
の絶縁破壊やショートを防止するための膜である。For example, in the case of the face eject type, an intermediate substrate is made of a Si substrate, and a concave discharge chamber having a bottom wall as a vibrating plate and ink inlet ports provided at the rear of each discharge chamber. Are formed, and a concave reservoir for supplying ink to each ejection chamber through each orifice is formed. An insulating film is formed on the surface of this substrate. The insulating film is a film for preventing dielectric breakdown or short circuit during inkjet driving.
【０００４】この中間の基板の下面に接合される基板
は、ホウケイ酸ガラスが使用され、振動板に間隙を有し
て対向する電極が装着されている。この電極は、所定の
パルス電位を出力するパルス発信回路と電気的に接続さ
れている。また、上面に接合される基板は、Ｓｉ基板が
用いられ、その面部には吐出室と連通する複数のノズル
孔と、リザーバーと連通するインク供給口とが設けられ
ている。The substrate to be bonded to the lower surface of the intermediate substrate is made of borosilicate glass, and the diaphragm is provided with electrodes facing each other with a gap. This electrode is electrically connected to a pulse transmission circuit that outputs a predetermined pulse potential. In addition, a Si substrate is used as the substrate to be joined to the upper surface, and a plurality of nozzle holes communicating with the ejection chamber and an ink supply port communicating with the reservoir are provided on the surface of the substrate.
【０００５】前述した振動板は、Ｓｉ基板のドープ面に
ボロンを高温で熱拡散させて形成された高濃度のボロン
ドープ層であって、異方性エッチングによってボロンド
ープ層が露出して形成されたものである。Ｓｉ基板の表
面の絶縁膜は、１０００℃以上の高温で熱酸化を行って
形成された熱酸化膜であり、振動板形成後に施されたも
のである。The above-described diaphragm is a high-concentration boron-doped layer formed by thermally diffusing boron at a high temperature on a doped surface of a Si substrate, and formed by exposing the boron-doped layer by anisotropic etching. It is. The insulating film on the surface of the Si substrate is a thermal oxide film formed by performing thermal oxidation at a high temperature of 1000 ° C. or higher, and is applied after forming the diaphragm.
【０００６】[0006]
【発明が解決しようとする課題】ところで、厚みが１μ
ｍ以下の振動板に絶縁膜を施した場合、前述したように
１０００℃以上の高温中で熱酸化を行うため、その振動
板が高温によって、また、熱酸化膜自体の応力によって
大きく撓んでしまうという問題があった。By the way, the thickness is 1 μm.
When an insulating film is applied to a diaphragm having a thickness of not more than m, thermal oxidation is performed at a high temperature of 1000 ° C. or more as described above, so that the diaphragm is largely bent by the high temperature and the stress of the thermal oxide film itself. There was a problem.
【０００７】本発明は、かかる課題を解決するためにな
されたもので、振動板の厚みが１μｍ以下であっても撓
むことなく、しかも、高絶縁耐圧の絶縁膜を形成するこ
とが可能なインクジェットヘッドの製造方法を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is possible to form an insulating film having a high withstand voltage without bending even if the thickness of the diaphragm is 1 μm or less. An object of the present invention is to provide a method for manufacturing an ink jet head.
【０００８】[0008]
【課題を解決するための手段】（１）本発明に係るイン
クジェットヘッドの製造方法は、ボロンドープ層が形成
されたＳｉ基板を異方性エッチングして当該ボロンドー
プ層を振動板とするインクジェットヘッドの製造方法に
おいて、前記振動板と電極との間で当該振動板面上にプ
ラズマＣＶＤによってＴＥＯＳ膜を成膜する。このプラ
ズマＣＶＤによるＴＥＯＳ膜の成膜温度は、高温による
熱酸化で成膜する従来と比べかなり低くいため、振動板
の撓み量の大きな変化を抑制することができる。(1) A method of manufacturing an ink-jet head according to the present invention is a method of manufacturing an ink-jet head using a boron-doped layer as a diaphragm by anisotropically etching a Si substrate on which a boron-doped layer is formed. In the method, a TEOS film is formed between the diaphragm and the electrode on the diaphragm surface by plasma CVD. The temperature at which the TEOS film is formed by the plasma CVD is considerably lower than the conventional temperature of forming a film by thermal oxidation at a high temperature, so that a large change in the amount of deflection of the diaphragm can be suppressed.
【０００９】（２）本発明に係るインクジェットヘッド
の製造方法は、振動板面上にＴＥＯＳ膜を形成する前に
当該振動板面上にＯ2プラズマ処理又はＡｒプラズマ処
理を施す。本発明においては、Ｏ2プラズマ処理又はＡ
ｒプラズマ処理により振動板の表面がクリーニングさ
れ、絶縁耐圧の均一性を向上させることができる。[0009] (2) A method for manufacturing an ink jet head according to the present invention, subjected to O 2 plasma treatment or Ar plasma treatment on the diaphragm plane prior to forming a TEOS film on the diaphragm surface. In the present invention, O 2 plasma treatment or A
The surface of the diaphragm is cleaned by the r-plasma treatment, and the uniformity of the withstand voltage can be improved.
【００１０】（３）本発明に係るインクジェットヘッド
の製造方法は、振動板の面上にＴＥＯＳ膜を形成した後
に当該ＴＥＯＳ膜上にアニール処理を施す。このアニー
ル処理を行うことでＴＥＯＳ膜の緻密性が向上し、絶縁
耐圧をさらに向上させることができる。(3) In the method of manufacturing an ink jet head according to the present invention, after forming a TEOS film on the surface of the diaphragm, annealing is performed on the TEOS film. By performing this annealing treatment, the denseness of the TEOS film is improved, and the withstand voltage can be further improved.
【００１１】（４）本発明に係るインクジェットヘッド
の製造方法は、プラズマＣＶＤによＴＥＯＳ膜の成膜温
度を５００℃以下とする。成膜温度が１０００℃以上の
従来と比べ低温であるため、振動板の撓み量の大きな変
化を抑えることができる。(4) In the method of manufacturing an ink jet head according to the present invention, the temperature for forming a TEOS film by plasma CVD is set to 500 ° C. or less. Since the film formation temperature is lower than the conventional temperature of 1000 ° C. or higher, a large change in the amount of deflection of the diaphragm can be suppressed.
【００１２】（５）本発明に係るインクジェットヘッド
の製造方法は、Ｏ2プラズマ処理は、少なくとも温度５
００℃以下、高周波出力８００Ｗ以下、時間３分以内を
条件として行う。(5) In the method of manufacturing an ink jet head according to the present invention, the O 2 plasma treatment is performed at least at a temperature of 5 ° C.
The process is performed under the conditions of 00 ° C. or less, high frequency output of 800 W or less, and time of 3 minutes or less.
【００１３】（６）本発明に係るインクジェットヘッド
の製造方法は、Ａｒプラズマ処理は、少なくとも温度５
００℃以下、高周波出力８００Ｗ以下、時間５分以内を
条件として行う。(6) In the method of manufacturing an ink jet head according to the present invention, the Ar plasma treatment is performed at least at a temperature of 5 °.
The operation is performed under the conditions of 00 ° C. or less, high-frequency output of 800 W or less, and time within 5 minutes.
【００１４】（７）本発明に係るインクジェットヘッド
の製造方法は、アニール処理は、温度が６００℃〜１０
００℃の範囲内、時間が１時間以上、窒素雰囲気中又は
酸素雰囲気中で行う。(7) In the method of manufacturing an ink jet head according to the present invention, the annealing is performed at a temperature of 600 ° C. to 10 ° C.
It is performed in a nitrogen atmosphere or an oxygen atmosphere within a range of 00 ° C. for a time of one hour or more.
【００１５】[0015]
【発明の実施の形態】図１は本発明の製造方法により形
成されたインクジェットヘッドの一例を示す側面断面図
である。図中に示す振動板２は、Ｓｉ基板１を異方性エ
ッチングして約０．８μｍの厚さに形成されたもので、
ガラス基板３に配置された電極４に対向する面上には以
下に示す方法によって絶縁膜５が施されている。FIG. 1 is a side sectional view showing an example of an ink jet head formed by the manufacturing method of the present invention. The diaphragm 2 shown in the figure is formed by anisotropically etching the Si substrate 1 to a thickness of about 0.8 μm.
An insulating film 5 is formed on the surface of the glass substrate 3 facing the electrode 4 by the following method.
【００１６】まず、厚さ約０．８μｍの振動板２の面上
をＯ2プラズマ処理によってクリーニングし、次に、プ
ラズマＣＶＤによりその振動板２の面上に５００℃以下
の温度でＴＥＯＳ膜を成膜する。そして、振動板２に成
膜したＴＥＯＳ膜をアニール処理し、絶縁膜５として形
成する。この方法により形成された絶縁膜５の絶縁耐圧
は、下記の表１に示すようにＯ 2プラズマ処理条件とア
ニール処理条件の組合せで異なるが、８．０MV/cm 以上
の測定結果が得られている。First, on the surface of the diaphragm 2 having a thickness of about 0.8 μm
OTwoClean by plasma treatment and then
500 ° C. or less on the surface of the diaphragm 2 by plasma CVD
A TEOS film is formed at a temperature of. Then, the vibration plate 2 is formed.
The formed TEOS film is annealed to form an insulating film 5.
To achieve. Withstand voltage of the insulating film 5 formed by this method
Is O as shown in Table 1 below. TwoPlasma processing conditions and
8.0 MV / cm or more, depending on the combination of the neal treatment conditions
Are obtained.
【００１７】例えば、Ｏ2プラズマ処理を圧力０．５tor
r、Ｏ2流量１０００sccm、高周波出力２５０Ｗ、温度３
６０℃の下で１分間行い、アニール処理を温度６００℃
の酸素雰囲気中で１時間行った場合、絶縁膜５の絶縁耐
圧は平均８．６MV/cm であった。Ｏ2プラズマ処理の条
件を前記と同一とし、アニール処理を温度１０００℃の
窒素雰囲気中で１時間行った場合は、平均１０．０MV/c
m の絶縁耐圧が得られた。For example, O 2 plasma treatment is performed at a pressure of 0.5 torr.
r, O 2 flow rate 1000 sccm, high frequency output 250 W, temperature 3
Performed at 60 ° C for 1 minute, annealing at 600 ° C
When performed in an oxygen atmosphere for 1 hour, the dielectric strength of the insulating film 5 was 8.6 MV / cm on average. When the conditions of the O 2 plasma treatment were the same as above and the annealing treatment was performed in a nitrogen atmosphere at a temperature of 1000 ° C. for 1 hour, the average was 10.0 MV / c.
m withstand voltage was obtained.
【００１８】Ｏ2プラズマ処理を同じ条件下で３分行
い、アニール処理を温度６００℃の酸素雰囲気中で１時
間行った場合は、平均８．６MV/cm の絶縁耐圧が得ら
れ、また、Ｏ2プラズマ処理を前記と同様に３分行い、
アニール処理を温度１０００℃の窒素雰囲気中で１時間
行った場合は、平均９．８MV/cm の絶縁耐圧が得られ
た。When the O 2 plasma treatment is performed under the same conditions for 3 minutes and the annealing treatment is performed in an oxygen atmosphere at a temperature of 600 ° C. for 1 hour, an average breakdown voltage of 8.6 MV / cm is obtained. 2 Perform plasma treatment for 3 minutes as above,
When the annealing treatment was performed for 1 hour in a nitrogen atmosphere at a temperature of 1000 ° C., an average withstand voltage of 9.8 MV / cm was obtained.
【００１９】[0019]
【表１】 [Table 1]
【００２０】振動板２の撓み量については下記の表２に
示す通りである。厚さ約０．８μｍの振動板２を形成し
たときの撓み量が１１０Åのとき、ＴＥＯＳ膜成膜後の
振動板２の撓み量は同じ値の１１０Åであり、ＴＥＯＳ
膜をアニール処理（６００℃）した後の振動板２の撓み
量は１０８Åであった。また、１０００℃でアニール処
理した振動板２の撓み量は１０７Åであった。なお、振
動板２の撓みの方向はＳｉ基板１のキャビ面側である。
この測定結果からも明らかなように、前述した方法によ
り絶縁膜５が形成された振動板２の撓み量の変化は殆ど
ないという効果が得られている。The amount of deflection of the diaphragm 2 is as shown in Table 2 below. When the amount of deflection when forming the diaphragm 2 having a thickness of about 0.8 μm is 110 °, the amount of deflection of the diaphragm 2 after forming the TEOS film is 110 °, which is the same value.
The amount of deflection of the diaphragm 2 after the film was annealed (600 ° C.) was 108 °. Further, the flexure of the diaphragm 2 annealed at 1000 ° C. was 107 °. The direction of deflection of the diaphragm 2 is on the mold surface side of the Si substrate 1.
As is apparent from the measurement results, there is obtained an effect that the amount of deflection of the diaphragm 2 on which the insulating film 5 is formed by the above-described method hardly changes.
【００２１】[0021]
【表２】 [Table 2]
【００２２】なお、ＴＥＯＳ膜成膜前の振動板２をＯ2
プラズマ処理でクリーニングしたことを述べたが、アル
ゴンガス（Ａｒ）によるプラズマ処理で振動板２をクリ
ーニングするようにしてもよい。[0022] In addition, the vibration plate 2 before TEOS film forming O 2
Although it has been described that the cleaning is performed by the plasma processing, the vibration plate 2 may be cleaned by the plasma processing using argon gas (Ar).
【００２３】例えば、ＴＥＯＳ膜成膜前の振動板２の下
面に対し、Ａｒプラズマ処理を圧力０．４torr、Ａｒ流
量３５０sccm、高周波出力２００Ｗ、温度３６０℃の下
で３分間行い、ＴＥＯＳ膜成膜後にはアニール処理を温
度１０００℃の窒素雰囲気中で１時間行う。この場合の
絶縁膜５の絶縁耐圧は平均９．５MV/cm という測定結果
が得られた。For example, the lower surface of the diaphragm 2 before forming the TEOS film is subjected to Ar plasma treatment at a pressure of 0.4 torr, an Ar flow rate of 350 sccm, a high frequency output of 200 W and a temperature of 360 ° C. for 3 minutes to form a TEOS film. Thereafter, an annealing process is performed in a nitrogen atmosphere at a temperature of 1000 ° C. for one hour. In this case, a measurement result that the withstand voltage of the insulating film 5 was 9.5 MV / cm on average was obtained.
【００２４】以上のように本実施の形態においては、厚
さ約０．８μｍの振動板２の面上を所定の条件下でＯ2
プラズマ処理又はＡｒプラズマ処理によってクリーニン
グし、次に、プラズマＣＶＤによりその振動板２の面上
に５００℃以下の温度でＴＥＯＳ膜を成膜し、そして、
振動板２に成膜したＴＥＯＳ膜を所定の条件下でアニー
ル処理を行うようにしたので、振動板の撓み量の大きな
変化がなくなり、しかも、絶縁耐圧が向上するという効
果がある。As described above, in the present embodiment, O 2 is applied under a predetermined condition on the surface of the diaphragm 2 having a thickness of about 0.8 μm.
Cleaning is performed by plasma processing or Ar plasma processing, and then a TEOS film is formed on the surface of the vibration plate 2 by plasma CVD at a temperature of 500 ° C. or less, and
Since the TEOS film formed on the diaphragm 2 is annealed under predetermined conditions, there is no change in the amount of deflection of the diaphragm, and the dielectric strength is improved.
【００２５】[0025]
【発明の効果】以上のように本発明によれば、振動板と
電極との間で振動板面上にプラズマＣＶＤによってＴＥ
ＯＳ膜を成膜するようにしたので、振動板の撓み量の大
きな変化を抑制することができる。As described above, according to the present invention, the TE between the diaphragm and the electrode is formed on the diaphragm surface by plasma CVD.
Since the OS film is formed, a large change in the amount of deflection of the diaphragm can be suppressed.
【００２６】また本発明によれば、振動板面上にＴＥＯ
Ｓ膜を形成する前に振動板面上にＯ 2プラズマ処理又は
Ａｒプラズマ処理を施すようにしたので、振動板の表面
がクリーニングされ、絶縁耐圧の均一性を向上させるこ
とができる。Further, according to the present invention, TEO is provided on the diaphragm surface.
Before forming the S film, O TwoPlasma treatment or
Since the Ar plasma treatment was performed, the surface of the diaphragm was
Is cleaned to improve the withstand voltage uniformity.
Can be.
【００２７】さらに本発明によれば、振動板の面上にＴ
ＥＯＳ膜を形成した後にアニール処理を行うようにした
ので、ＴＥＯＳ膜の緻密性が向上し、絶縁耐圧をさらに
向上させることができる。Further, according to the present invention, T
Since the annealing process is performed after the EOS film is formed, the denseness of the TEOS film is improved, and the withstand voltage can be further improved.
【図１】本発明の製造方法により形成されたインクジェ
ットヘッドの一例を示す側面断面図である。FIG. 1 is a side sectional view showing an example of an inkjet head formed by a manufacturing method of the present invention.
１ Ｓｉ基板 ２ 振動板 ３ ガラス基板 ４ 電極 ５ 絶縁膜 REFERENCE SIGNS LIST 1 Si substrate 2 diaphragm 3 glass substrate 4 electrode 5 insulating film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 紙透 真一 長野県諏訪市大和３丁目３番５号 セイコ ーエプソン株式会社内 Ｆターム(参考） 2C057 AF65 AF93 AG54 AP02 AP11 AP34 AP51 AP53 AP56 AQ02 BA05 BA14 BA15 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shinichi Paper Toru 3-3-5 Yamato, Suwa City, Nagano Prefecture Seiko Epson Corporation F-term (reference) 2C057 AF65 AF93 AG54 AP02 AP11 AP34 AP51 AP53 AP56 AQ02 BA05 BA14 BA15
Claims (7)
異方性エッチングして当該ボロンドープ層を振動板とす
るインクジェットヘッドの製造方法において、 前記振動板と電極との間で当該振動板面上にプラズマＣ
ＶＤによってＴＥＯＳ膜を成膜することを特徴とするイ
ンクジェットヘッドの製造方法。1. A method of manufacturing an ink-jet head using a boron-doped layer as a diaphragm by anisotropically etching a Si substrate on which a boron-doped layer is formed, comprising the steps of: Plasma C
A method for manufacturing an ink jet head, comprising forming a TEOS film by VD.
に当該振動板面上にＯ2プラズマ処理又はＡｒプラズマ
処理を施すことを特徴とする請求項１記載のインクジェ
ットヘッドの製造方法。2. The method for manufacturing an ink jet head according to claim 1, wherein before the TEOS film is formed on the surface of the diaphragm, the surface of the diaphragm is subjected to O 2 plasma treatment or Ar plasma treatment.
に当該ＴＥＯＳ膜上にアニール処理を施すことを特徴と
する請求項１又は２の何れかに記載のインクジェットヘ
ッドの製造方法。3. The method for manufacturing an ink jet head according to claim 1, wherein after a TEOS film is formed on the surface of the vibration plate, an annealing process is performed on the TEOS film.
温度を５００℃以下とすることを特徴とする請求項１乃
至３の何れかに記載のインクジェットヘッドの製造方
法。4. The method according to claim 1, wherein the temperature of the TEOS film formed by plasma CVD is set to 500 ° C. or less.
００℃以下、高周波出力８００Ｗ以下、時間３分以内を
条件として行うことを特徴とする請求項１乃至４の何れ
かに記載のインクジェットヘッドの製造方法。5. An O 2 plasma treatment at a temperature of at least 5 ° C.
The method according to any one of claims 1 to 4, wherein the method is performed under the conditions of 00 ° C or lower, high-frequency output of 800W or lower, and time of 3 minutes or less.
００℃以下、高周波出力８００Ｗ以下、時間５分以内を
条件として行うことを特徴とする請求項１乃至４の何れ
かに記載のインクジェットヘッドの製造方法。6. The Ar plasma treatment is performed at least at a temperature of 5 ° C.
The method according to any one of claims 1 to 4, wherein the method is performed under the conditions of 00C or lower, a high frequency output of 800W or lower, and a time of 5 minutes or less.
００℃の範囲内、時間が１時間以上、窒素雰囲気中又は
酸素雰囲気中で行うことを特徴とする請求項１乃至６の
何れかに記載のインクジェットヘッドの製造方法。7. The annealing treatment is performed at a temperature of 600 ° C. to 10 ° C.
The method according to any one of claims 1 to 6, wherein the heating is performed in a nitrogen atmosphere or an oxygen atmosphere within a temperature range of 00 ° C for one hour or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000207870A JP2002019129A (en) | 2000-07-10 | 2000-07-10 | Method for manufacturing ink jet head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000207870A JP2002019129A (en) | 2000-07-10 | 2000-07-10 | Method for manufacturing ink jet head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002019129A true JP2002019129A (en) | 2002-01-23 |
Family
ID=18704561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000207870A Withdrawn JP2002019129A (en) | 2000-07-10 | 2000-07-10 | Method for manufacturing ink jet head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002019129A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7766456B2 (en) | 2006-06-12 | 2010-08-03 | Seiko Epson Corporation | Electrostatic actuator, liquid droplet discharging head, methods for manufacturing them, and liquid droplet discharging apparatus |
| US7976127B2 (en) | 2006-12-04 | 2011-07-12 | Seiko Epson Corporation | Electrostatic actuator, droplet discharge head, methods for manufacturing the same and droplet discharge apparatus |
-
2000
- 2000-07-10 JP JP2000207870A patent/JP2002019129A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7766456B2 (en) | 2006-06-12 | 2010-08-03 | Seiko Epson Corporation | Electrostatic actuator, liquid droplet discharging head, methods for manufacturing them, and liquid droplet discharging apparatus |
| US8136925B2 (en) | 2006-06-12 | 2012-03-20 | Seiko Epson Corporation | Electrostatic actuator, liquid droplet discharging head, methods for manufacturing them, and liquid droplet discharging apparatus |
| US7976127B2 (en) | 2006-12-04 | 2011-07-12 | Seiko Epson Corporation | Electrostatic actuator, droplet discharge head, methods for manufacturing the same and droplet discharge apparatus |
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