JP2002014202A - Optical thin film, optical element and exposure system - Google Patents
Optical thin film, optical element and exposure systemInfo
- Publication number
- JP2002014202A JP2002014202A JP2000197512A JP2000197512A JP2002014202A JP 2002014202 A JP2002014202 A JP 2002014202A JP 2000197512 A JP2000197512 A JP 2000197512A JP 2000197512 A JP2000197512 A JP 2000197512A JP 2002014202 A JP2002014202 A JP 2002014202A
- Authority
- JP
- Japan
- Prior art keywords
- fluoride
- thin film
- substrate
- optical
- optical thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、波長が１５０ｎｍ
以上２００ｎｍ以下の波長域で用いる光学薄膜、これが
成膜された光学素子及び、この光学素子を用いた装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to an optical thin film used in a wavelength region of 200 nm or less, an optical element on which the thin film is formed, and an apparatus using the optical element.
【０００２】[0002]
【従来の技術】近年、半導体デバイスの集積度を増すた
めに、半導体デバイス製造プロセスのリソグラフィープ
ロセスで用いられる縮小投影露光装置（ステッパー）の
高解像度化の要求が高まっている。高解像度を達成する
ための一つの方法として、光源波長の短波長化が挙げら
れる。そのために最近では、水銀ランプよりも短波長域
の光を発振でき、かつ高出力なエキシマレーザを光源と
したステッパーの実用化が始まっている。それに伴っ
て、この短波長域において使用可能な光学素子の開発が
重要になってきている。2. Description of the Related Art In recent years, in order to increase the degree of integration of semiconductor devices, there is an increasing demand for higher resolution of a reduction projection exposure apparatus (stepper) used in a lithography process of a semiconductor device manufacturing process. One method for achieving high resolution is to shorten the light source wavelength. Therefore, recently, a stepper using a high-output excimer laser as a light source that can oscillate light in a shorter wavelength range than a mercury lamp has started to be put into practical use. Accordingly, development of an optical element that can be used in this short wavelength region has become important.
【０００３】この短波長域において使用される光学素子
は、短波長光を透過する光学基板上に、複数の層から形
成される高反射膜または反射防止膜等の光学薄膜を具え
ている。この光学素子は、縮小投影露光装置等の光学系
に組み込まれている。The optical element used in the short wavelength region includes an optical thin film such as a high reflection film or an antireflection film formed of a plurality of layers on an optical substrate that transmits short wavelength light. This optical element is incorporated in an optical system such as a reduction projection exposure apparatus.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
光学素子の問題点は、光学素子へのレーザ照射によって
光学素子表面に形成された光学薄膜が破壊されること、
即ちレーザ耐久性が低いことであった。この破壊の程度
は一般に照射エネルギーが高く、且つ短波長になるほど
甚だしい。光学薄膜のレーザ耐久性は、光学薄膜及びこ
れを成膜した光学素子及びこの光学素子を組み込んだ光
学装置の良好な光学特性を安定的に維持するために極め
て重要である。However, a problem with the conventional optical element is that the optical thin film formed on the surface of the optical element is destroyed by laser irradiation on the optical element.
That is, the laser durability was low. In general, the degree of this destruction becomes greater as the irradiation energy becomes higher and the wavelength becomes shorter. The laser durability of the optical thin film is extremely important for stably maintaining good optical characteristics of the optical thin film, the optical element on which the optical thin film is formed, and the optical device incorporating the optical element.
【０００５】従来、紫外領域のレーザ光で使用される光
学素子用の光学薄膜では、光学基板上に１種類の物質ま
たは屈折率の異なる２種類以上の物質を単層または積層
して形成して、反射防止特性、または反射特性等の所望
の光学特性を達成するように設計製造されていた。そし
てレーザ耐久性を高めるための方法には、使用波長での
光吸収係数が小さい物質を積層物質として選定し、これ
らの物質を最適に組み合わせること、各層における光学
薄膜の膜厚を最適にすること、さらには形成された層物
質の光吸収係数を極力小さくするための成膜方法を改良
することである。Conventionally, in an optical thin film for an optical element used for laser light in the ultraviolet region, one kind of substance or two or more kinds of substances having different refractive indexes are formed on an optical substrate in a single layer or a laminate. It has been designed and manufactured to achieve desired optical characteristics such as anti-reflection characteristics or reflection characteristics. Methods for improving laser durability include selecting materials with a small light absorption coefficient at the operating wavelength as laminated materials, optimally combining these materials, and optimizing the thickness of the optical thin film in each layer. Another object of the present invention is to improve a film forming method for minimizing the light absorption coefficient of the formed layer material.
【０００６】このように、従来の光学薄膜のレーザ耐久
性向上の改良観点は、レーザ光の光吸収量を小さくする
ということにおかれ、その研究成果から最終的な光学素
子を開発してきた。しかしながら、最近、以上のような
観点だけからはレーザ耐久性が更に高い光学薄膜を得る
ことができないことが判明した。このことは使用する波
長の短波長化、高照射パワー化に伴ってますます顕在化
し、レーザ耐久性向上を図る必要が高まってきた。As described above, the conventional viewpoint of improving the laser durability of the optical thin film is to reduce the amount of light absorbed by the laser light, and a final optical element has been developed based on the research results. However, it has recently been found that it is not possible to obtain an optical thin film with even higher laser durability from the above viewpoints alone. This becomes more and more conspicuous as the wavelength used becomes shorter and the irradiation power becomes higher, and there is an increasing need to improve the laser durability.
【０００７】本発明はこれらの問題を解決し、よりレー
ザ耐久性の高い光学薄膜、及び光学素子、及び光学装置
を提供することを目的とする。It is an object of the present invention to solve these problems and to provide an optical thin film, an optical element, and an optical device having higher laser durability.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に本発明は、基板と、前記基板上に成膜されるフッ化物
系物質からなる層を含む光学薄膜において、前記基板側
とは反対側である最上層に酸化物系物質からなる層を配
置する構成とした。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides an optical thin film including a substrate and a layer made of a fluoride-based material formed on the substrate, wherein the optical thin film is opposite to the substrate side. A layer made of an oxide-based material was arranged on the uppermost layer on the side.
【０００９】[0009]
【発明の実施の形態】本発明の実施の形態における光学
薄膜は、光学基板上に形成されたフッ化物系物質からな
る光学薄膜の最上層、すなわち、光学基板から一番離れ
た層に酸化物系物質からなる層を配置したことであるで
ある。これによって、従来の光学薄膜よりもレーザ耐久
性が向上することが見いだされた。BEST MODE FOR CARRYING OUT THE INVENTION An optical thin film according to an embodiment of the present invention is an oxide thin film which is formed on an optical substrate and which is the uppermost layer of an optical thin film made of a fluoride-based material, ie, a layer farthest from the optical substrate. That is, a layer made of a system material is arranged. As a result, it has been found that the laser durability is improved as compared with the conventional optical thin film.
【００１０】光学基板としては、石英硝子や蛍石等が好
ましく用いられる。フッ化物系物質から構成される従来
の光学薄膜では、光学薄膜表面近傍においてダメージの
起点が発生する。しかしながら本発明の薄膜の構成にお
いては、ダメージの起点発生が抑制され、光学薄膜のレ
ーザ耐久性が向上すると考えられる。この酸化物系物質
としては、ケイ素酸化物が望ましい。As the optical substrate, quartz glass, fluorite or the like is preferably used. In a conventional optical thin film composed of a fluoride-based material, a starting point of damage occurs near the surface of the optical thin film. However, in the structure of the thin film of the present invention, it is considered that the occurrence of damage origin is suppressed and the laser durability of the optical thin film is improved. As this oxide-based material, silicon oxide is desirable.
【００１１】光学薄膜の成膜法としては真空蒸着法、ス
パッタ法（ＲＦスパッタ法、イオンビームスパッタ法
等）、イオンプレーティング法、イオンビームアシスト
蒸着法等があり、特には限定されない。スパッタ法、イ
オンプレーティング法、イオンビームアシスト蒸着法が
光学薄膜の密度を高くすることが容易であるために好ま
しい方法である。The method for forming the optical thin film includes, but is not particularly limited to, a vacuum evaporation method, a sputtering method (RF sputtering method, ion beam sputtering method, etc.), an ion plating method, and an ion beam assisted evaporation method. Sputtering, ion plating, and ion beam assisted vapor deposition are preferred methods because it is easy to increase the density of the optical thin film.
【００１２】この光学薄膜としては、高反射膜、反射防
止膜等のあらゆる種類の光学薄膜が対象である。必要な
光学特性仕様及び使用波長に対して最適化するように、
各膜構成、各構成膜の層数、及び各膜厚が調整されてい
る。本発明の光学薄膜、更にこれを具えた光学素子、こ
の光学素子を組み込んだ光学装置、特に縮小投影露光装
置は、１５０〜２００ｎｍの紫外域で好ましく用いられ
る。特にエキシマレーザ光、ハロゲン分子レーザ光、高
調波レーザ光で好ましく用いられ、レーザ耐久性が高い
ため、長期にわたって良好な光学特性を維持できる。As the optical thin film, all kinds of optical thin films such as a high reflection film and an antireflection film are applicable. To optimize for the required optical property specifications and the wavelength used,
Each film configuration, the number of layers of each constituent film, and each film thickness are adjusted. The optical thin film of the present invention, an optical element having the same, and an optical device incorporating the optical element, particularly a reduction projection exposure apparatus, are preferably used in the ultraviolet region of 150 to 200 nm. Particularly, it is preferably used for excimer laser light, halogen molecule laser light, and harmonic laser light, and has high laser durability, so that good optical characteristics can be maintained for a long time.
【００１３】次に本発明の露光装置の一例を説明する。
図３は、本発明に係る上記方法、装置で得られたフッ化
物薄膜を有する光学素子を用いた露光装置の基本構造で
あり、フォトレジストでコートされたウェハー上にレチ
クルのパターンのイメージを投影するための、ステッパ
と呼ばれるような投影露光装置に特に応用される。Next, an example of the exposure apparatus of the present invention will be described.
FIG. 3 shows a basic structure of an exposure apparatus using an optical element having a fluoride thin film obtained by the above method and apparatus according to the present invention, and projects an image of a reticle pattern onto a wafer coated with a photoresist. In particular, the present invention is applied to a projection exposure apparatus called a stepper.
【００１４】図３に示すように、本発明の露光装置は少
なくとも、表面３０１ａに置かれた感光剤を塗布した基
板Ｗを置くことのできるウェハーステージ３０１，露光
光として用意された波長の真空紫外光を照射し、基板Ｗ
上に用意されたマスクのパターン（レチクルＲ）を転写
するための照明光学系１０１，照明光学系１０１に露光
光を供給するための光源１００，基板Ｗ上にマスクＲの
パターンのイメージを投影するためのマスクＲが配され
た最初の表面Ｐ１（物体面）と基板Ｗの表面と一致させ
た二番目の表面（像面）との間に置かれた投影光学系５
００、を含む。照明光学系１０１は、マスクＲとウェハ
ーＷとの間の相対位置を調節するための、アライメント
光学系１１０も含んでおり、マスクＲはウェハーステー
ジ３０１の表面に対して平行に動くことのできるレチク
ルステージ２０１に配置される。レチクル交換系２００
は、レチクルステージ２０１にセットされたレチクル
（マスクＲ）を交換し運搬する。レチクル交換系２００
はウェハーステージ３０１の表面３０１ａに対してレチ
クルステージ２０１を平行に動かすためのステージドラ
イバーを含んでいる。投影光学系５００は、スキャンタ
イプの露光装置に応用されるアライメント光学系を持っ
ている。As shown in FIG. 3, the exposure apparatus of the present invention comprises at least a wafer stage 301 on which a substrate W coated with a photosensitive agent placed on a surface 301a can be placed, and a vacuum ultraviolet light having a wavelength prepared as exposure light. The substrate W
An illumination optical system 101 for transferring a mask pattern (reticle R) prepared above, a light source 100 for supplying exposure light to the illumination optical system 101, and an image of the pattern of the mask R on the substrate W. Optical system 5 placed between a first surface P1 (object plane) on which a mask R is arranged and a second surface (image plane) matched with the surface of the substrate W
00. The illumination optical system 101 also includes an alignment optical system 110 for adjusting a relative position between the mask R and the wafer W, and the mask R is a reticle that can move parallel to the surface of the wafer stage 301. It is arranged on the stage 201. Reticle exchange system 200
Exchanges and transports the reticle (mask R) set on the reticle stage 201. Reticle exchange system 200
Includes a stage driver for moving the reticle stage 201 parallel to the surface 301a of the wafer stage 301. The projection optical system 500 has an alignment optical system applied to a scan type exposure apparatus.
【００１５】そして、本発明の露光装置は、前記本発明
の方法で製造された薄膜を含む光学素子を使用したもの
である。具体的には、図３に示した本発明の露光装置
は、照明光学系１０１の光学レンズ９０および／または
投影光学系５００の光学レンズ１００として本発明にか
かる光学レンズを備えることが可能である。 ［実施例］図１は紫外域レーザ用反射膜の断面図であ
る。この反射膜は、光学基板（蛍石）１上に、１９３ｎ
ｍの設計中心波長λとしたとき、光学的膜厚０．２５λ
のフッ化物系高屈折率層であるフッ化ネオジウム（Ｎｄ
Ｆ３）２と、光学的膜厚０．２５λのフッ化物系低屈折
率層であるフッ化マグネシウム（ＭｇＦ２）３とを交互
に７層積み上げ、最上層に光学的膜厚０．５０λのケイ
素酸化物層である酸化ケイ素（ＳｉＯ２）４を成膜する
ことにより構成される。成膜は真空蒸着法により行っ
た。An exposure apparatus of the present invention uses an optical element including a thin film manufactured by the method of the present invention. Specifically, the exposure apparatus of the present invention shown in FIG. 3 can include the optical lens according to the present invention as the optical lens 90 of the illumination optical system 101 and / or the optical lens 100 of the projection optical system 500. . FIG. 1 is a sectional view of a reflection film for an ultraviolet laser. This reflection film is formed on the optical substrate (fluorite) 1 by 193n.
When the design center wavelength λ is m, the optical film thickness is 0.25λ.
Neodymium fluoride (Nd)
F3) 2 layers and magnesium fluoride (MgF2) 3 as a fluoride-based low refractive index layer having an optical film thickness of 0.25λ are alternately stacked on top of each other, and silicon oxide having an optical film thickness of 0.50λ is formed on the uppermost layer. It is formed by forming a silicon oxide (SiO 2) 4 as a material layer. The film was formed by a vacuum deposition method.
【００１６】図２はレーザ耐久性の測定結果を示すグラ
フである。図２において、サンプルＡは本発明の実施例
における構成膜であり、サンプルＢは最上層に酸化物系
物質を設けない従来の構成膜を示す。グラフの横軸はパ
ルス発振レーザの照射パルス数であり、縦軸はレーザ光
の照射エネルギー密度である。各座標点は照射パルス数
と破壊の有無の閾値となる照射エネルギー密度とを示
す。FIG. 2 is a graph showing measurement results of laser durability. In FIG. 2, sample A is a constituent film in the example of the present invention, and sample B is a conventional constituent film in which no oxide-based material is provided on the uppermost layer. The horizontal axis of the graph is the number of irradiation pulses of the pulsed laser, and the vertical axis is the irradiation energy density of the laser light. Each coordinate point indicates the number of irradiation pulses and the irradiation energy density serving as a threshold for the presence or absence of destruction.
【００１７】レーザ耐久性の測定には、レーザ・インデ
ュースド・ダメージ・シュレッシュホールド（Ｌａｓｅ
ｒ Ｉｎｄｕｃｅｄ Ｄａｍａｇｅ Ｔｈｒｅｓｈｏｌ
ｄ、以下ＬＩＤＴと略す）測定法を用いた。ＬＩＤＴ測
定は、測定するサンプルの表面に照射エネルギー密度を
変化させたレーザ光を場所を変えながら照射し、サンプ
ルの表面上の破壊の有無を顕微鏡にて観察する方法であ
る。For measuring the laser durability, a laser induced damage shresh hold (Lase) is used.
r Induced Damage Threshold
d, hereinafter abbreviated as LIDT). The LIDT measurement is a method of irradiating the surface of a sample to be measured with a laser beam having a changed irradiation energy density while changing its location, and observing the presence or absence of breakage on the surface of the sample with a microscope.
【００１８】光源はＡｒＦエキシマレーザであり、発振
波長は１９３ｎｍ、パルス半値幅は約２０ｎｓ、ランダ
ム偏光である。照射周波数は１〜１００Ｈｚまで可変し
て行なった。図２において、サンプルＡ、Ｂはパルス数
が１０5未満の領域では、同じようなレーザ耐久性を示
す。パルス数が１０5以上の領域では、サンプルＢは大
幅な低下がみられるのに対して、サンプルＡはさほど低
下がみられなかった。すなわち、サンプルＡの方がサン
プルＢよりレーザ耐久性が高いことを示している。The light source is an ArF excimer laser having an oscillation wavelength of 193 nm, a pulse half width of about 20 ns, and random polarization. The irradiation frequency was varied from 1 to 100 Hz. In FIG. 2, samples A and B show similar laser durability in the region where the number of pulses is less than 10 5. In the region where the number of pulses is 10 5 or more, sample B shows a significant decrease, while sample A shows no significant decrease. That is, it shows that Sample A has higher laser durability than Sample B.
【００１９】最上層に酸化物系物質からなる層を設ける
ことでレーザ耐久性が向上する理由は、フッ化物表面上
に存在する欠損を安定させること（保護膜的な役割）、
及びフッ化物表面上に存在する欠損に外部からの反応要
因を遮断することと発明者は考える。The reason why the laser durability is improved by providing a layer made of an oxide-based material on the uppermost layer is to stabilize defects existing on the fluoride surface (the role of a protective film),
The inventor believes that the reaction factors from the outside to the defects existing on the fluoride surface are blocked.
【００２０】尚、本実施例では、高屈折率層を形成する
物質に、フッ化ネオジウム（ＮｄＦ３）を用いたがこれ
に限定されることなく、フッ化ネオジウム（ＮｄＦ
３）、フッ化ランタン（ＬａＦ３）、フッ化ガドリニウ
ム（ＧｄＦ３）、フッ化ディスプロシウム（ＤｙＦ
３）、フッ化イットリウム（ＹＦ３）、フッ化鉛（Ｐｂ
Ｆ２）、およびこれら混合物又は化合物であればよい。In this embodiment, neodymium fluoride (NdF3) is used as a material for forming the high refractive index layer. However, the present invention is not limited to this.
3), lanthanum fluoride (LaF3), gadolinium fluoride (GdF3), dysprosium fluoride (DyF
3), yttrium fluoride (YF3), lead fluoride (Pb
F2), and mixtures or compounds thereof.
【００２１】また、本実施例では、低屈折率層を形成す
る物質に、フッ化マグネシウム（ＭｇＦ２）を用いたが
これに限定されることなく、フッ化マグネシウム（Ｍｇ
Ｆ２）、フッ化アルミニウム（ＡｌＦ３）、フッ化ナト
リウム（ＮａＦ）、フッ化リチウム（ＬｉＦ）)、フッ
化カルシウム（ＣａＦ２）、フッ化バリウム（ＢａＦ
２）、フッ化ストロンチウム（ＳｒＦ２）、クリオライ
ト（Ｎａ３ＡｌＦ６）、チオライト（Ｎａ５Ａｌ３Ｆ１
４）、及びこれら混合物又は化合物であれればよい。In this embodiment, magnesium fluoride (MgF2) is used as a material for forming the low refractive index layer. However, the present invention is not limited to this.
F2), aluminum fluoride (AlF3), sodium fluoride (NaF), lithium fluoride (LiF)), calcium fluoride (CaF2), barium fluoride (BaF)
2), strontium fluoride (SrF2), cryolite (Na3AlF6), thiolite (Na5Al3F1)
4), and mixtures or compounds thereof.
【００２２】[0022]
【発明の効果】以上説明したとおり、本発明にかかる光
学薄膜を用いると紫外域、特に１５０〜２００ｎｍの波
長域で、レーザ耐久性が向上した光学素子を提供でき
る。そのためこの光学薄膜を具えた光学素子の、更には
この光学素子を組み込んだ光学装置、特には紫外域のレ
ーザ光で用いる縮小投影露光装置のレーザ耐久性は向上
され、長期に渡って良好な光学特性を維持することが出
来る。As described above, when the optical thin film according to the present invention is used, an optical element having improved laser durability in the ultraviolet region, particularly in the wavelength region of 150 to 200 nm can be provided. Therefore, the laser durability of the optical element provided with the optical thin film, and further, of the optical device incorporating the optical element, particularly the reduction projection exposure apparatus used with ultraviolet laser light, has been improved, and a good optical property has been obtained over a long period of time. Characteristics can be maintained.
【図１】図１は、本発明の一実施例である光学薄膜の断
面を示す図である。FIG. 1 is a diagram showing a cross section of an optical thin film according to an embodiment of the present invention.
【図２】図２は、ＬＩＤＴ測定結果を示す図である。FIG. 2 is a diagram showing a result of LIDT measurement.
【図３】図３は、本発明の光学素子を用いた露光装置の
基本構成を示す構成図である。FIG. 3 is a configuration diagram showing a basic configuration of an exposure apparatus using the optical element of the present invention.
１… 光学基板（蛍石） ２… フッ化ネオジウム層 ３… フッ化マグネシウム層 ４… 酸化ケイ素層 １０１…照明光学系 ５００…投影光学系 ９０…照明光学系の光学レンズ １００…投影光学系の光学レンズ DESCRIPTION OF SYMBOLS 1 ... Optical board (fluorite) 2 ... Neodymium fluoride layer 3 ... Magnesium fluoride layer 4 ... Silicon oxide layer 101 ... Illumination optical system 500 ... Projection optical system 90 ... Optical lens of illumination optical system 100 ... Optics of projection optical system lens
Claims (10)
物系物質からなる層を含む光学薄膜において、前記基板
側とは反対側である最上層に酸化物系物質からなる層を
配置し、レーザ耐久性を向上させたことを特徴とする光
学薄膜。1. An optical thin film including a substrate and a layer made of a fluoride-based material formed on the substrate, wherein a layer made of an oxide-based material is disposed on an uppermost layer opposite to the substrate side. And an optical thin film having improved laser durability.
ことを特徴とする請求項１に記載の光学薄膜。2. The optical thin film according to claim 1, wherein the oxide-based material is a silicon oxide.
紫外光で用いられる請求項１に記載の光学薄膜。3. The optical thin film according to claim 1, which is used for ultraviolet light having a wavelength of 150 nm or more and 200 nm or less.
る請求項１に記載の光学薄膜。4. The optical thin film according to claim 1, wherein the substrate is fluorite.
基板の屈折率以上の物質からなる高屈折率層と、前記基
板の屈折率以下の物質からなる低屈折率層とを交互に積
層して形成されることを特徴とする請求項１に記載の光
学薄膜。5. The layer made of a fluoride-based material is formed by alternately stacking a high-refractive-index layer made of a material having a refractive index equal to or higher than that of the substrate and a low-refractive-index layer made of a material having a refractive index lower than the substrate. The optical thin film according to claim 1, wherein the optical thin film is formed.
化ネオジウム（ＮｄＦ３）、フッ化ランタン（ＬａＦ
３）、フッ化ガドリニウム（ＧｄＦ３）、フッ化ディス
プロシウム（ＤｙＦ３）、フッ化イットリウム（ＹＦ
３）、フッ化鉛（ＰｂＦ２）、およびこれら混合物又は
化合物であることを特徴とする請求項５に記載の光学薄
膜。6. The substance forming the high refractive index layer includes neodymium fluoride (NdF3) and lanthanum fluoride (LaF).
3), gadolinium fluoride (GdF3), dysprosium fluoride (DyF3), yttrium fluoride (YF
The optical thin film according to claim 5, wherein the optical thin film is 3), lead fluoride (PbF2), or a mixture or compound thereof.
化マグネシウム（ＭｇＦ２）、フッ化アルミニウム（Ａ
ｌＦ３）、フッ化ナトリウム（ＮａＦ）、フッ化リチウ
ム（ＬｉＦ）、フッ化カルシウム（ＣａＦ２）、フッ化
バリウム（ＢａＦ２）、フッ化ストロンチウム（ＳｒＦ
２）、クリオライト（Ｎａ３ＡｌＦ６）、チオライト
（Ｎａ５Ａｌ３Ｆ１４）、及びこれら混合物又は化合物
であることを特徴とする請求項５に記載の光学薄膜。7. A substance forming the low refractive index layer is magnesium fluoride (MgF2), aluminum fluoride (A
IF3), sodium fluoride (NaF), lithium fluoride (LiF), calcium fluoride (CaF2), barium fluoride (BaF2), strontium fluoride (SrF
The optical thin film according to claim 5, which is 2), cryolite (Na3AlF6), thiolite (Na5Al3F14), or a mixture or compound thereof.
学素子。8. An optical element on which the optical thin film according to claim 1 is formed.
を基板上に投影露光する装置であって、真空紫外線を露
光光としてマスクを照明する照明光学系と、請求項８に
記載の光学素子を含み、前記マスクのパターン像を基板
上に形成する投影光学系とを備えた投影露光装置。9. An apparatus for projecting and exposing a pattern image of a mask onto a substrate using a projection optical system, wherein the illumination optical system illuminates the mask with vacuum ultraviolet rays as exposure light, and the optical element according to claim 8. And a projection optical system for forming a pattern image of the mask on a substrate.
像を基板上に投影露光する装置であって、請求項８に記
載の光学素子を含み、真空紫外線を露光光としてマスク
を照明する照明光学系と、前記マスクのパターン像を基
板上に形成する投影光学系とを備えた投影露光装置。10. An apparatus for projecting and exposing a pattern image of a mask onto a substrate by using a projection optical system, comprising: the optical element according to claim 8 for illuminating the mask with vacuum ultraviolet rays as exposure light. And a projection optical system for forming a pattern image of the mask on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000197512A JP2002014202A (en) | 2000-06-30 | 2000-06-30 | Optical thin film, optical element and exposure system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000197512A JP2002014202A (en) | 2000-06-30 | 2000-06-30 | Optical thin film, optical element and exposure system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002014202A true JP2002014202A (en) | 2002-01-18 |
Family
ID=18695835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000197512A Pending JP2002014202A (en) | 2000-06-30 | 2000-06-30 | Optical thin film, optical element and exposure system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002014202A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004073052A1 (en) | 2003-02-17 | 2004-08-26 | Nikon Corporation | Exposure apparatus and optical member for exposure apparatus |
| JP2008287219A (en) * | 2007-02-28 | 2008-11-27 | Corning Inc | Engineered fluoride-coated element for laser system |
| JP2011117044A (en) * | 2009-12-04 | 2011-06-16 | Nikon Corp | Optical thin film, production method therefor, optical multilayer film including optical thin film, optical component having optical thin film, aligner including optical component, and exposure method |
| JP2013512465A (en) * | 2009-11-25 | 2013-04-11 | コーニング インコーポレイテッド | Anti-reflection coating for adhesive protection |
| US8435726B2 (en) | 2005-12-09 | 2013-05-07 | Carl Zeiss Smt Gmbh | Method of processing an optical element and an optical element, in particular for a microlithographic projection exposure apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123401A (en) * | 1985-11-22 | 1987-06-04 | Nippon Kogaku Kk <Nikon> | Optical thin film for far ultraviolet rays |
| JPS63113502A (en) * | 1986-10-31 | 1988-05-18 | Canon Inc | Reflection preventive film |
| JPH10319209A (en) * | 1997-05-19 | 1998-12-04 | Nikon Corp | Antireflection film, its production, optical element and optical system |
| JPH11142604A (en) * | 1997-11-10 | 1999-05-28 | Nikon Corp | Optical thin film and its production |
| JPH11248903A (en) * | 1998-03-03 | 1999-09-17 | Nikon Corp | Reflection preventive film |
-
2000
- 2000-06-30 JP JP2000197512A patent/JP2002014202A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123401A (en) * | 1985-11-22 | 1987-06-04 | Nippon Kogaku Kk <Nikon> | Optical thin film for far ultraviolet rays |
| JPS63113502A (en) * | 1986-10-31 | 1988-05-18 | Canon Inc | Reflection preventive film |
| JPH10319209A (en) * | 1997-05-19 | 1998-12-04 | Nikon Corp | Antireflection film, its production, optical element and optical system |
| JPH11142604A (en) * | 1997-11-10 | 1999-05-28 | Nikon Corp | Optical thin film and its production |
| JPH11248903A (en) * | 1998-03-03 | 1999-09-17 | Nikon Corp | Reflection preventive film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004073052A1 (en) | 2003-02-17 | 2004-08-26 | Nikon Corporation | Exposure apparatus and optical member for exposure apparatus |
| US8435726B2 (en) | 2005-12-09 | 2013-05-07 | Carl Zeiss Smt Gmbh | Method of processing an optical element and an optical element, in particular for a microlithographic projection exposure apparatus |
| JP2008287219A (en) * | 2007-02-28 | 2008-11-27 | Corning Inc | Engineered fluoride-coated element for laser system |
| JP2015194789A (en) * | 2007-02-28 | 2015-11-05 | コーニング インコーポレイテッド | Engineered fluoride-coated element for laser system |
| JP2013512465A (en) * | 2009-11-25 | 2013-04-11 | コーニング インコーポレイテッド | Anti-reflection coating for adhesive protection |
| JP2011117044A (en) * | 2009-12-04 | 2011-06-16 | Nikon Corp | Optical thin film, production method therefor, optical multilayer film including optical thin film, optical component having optical thin film, aligner including optical component, and exposure method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6574039B1 (en) | Optical element with multilayer thin film and exposure apparatus with the element | |
| US6310905B1 (en) | Mirror for an ultraviolet laser and method | |
| KR100663808B1 (en) | Ultraviolet Polarization Beam Splitter for Microlithography | |
| JP3924806B2 (en) | Anti-reflection coating | |
| US6590702B1 (en) | Multilayer antireflection film, optical member, and reduction projection exposure apparatus | |
| US9684252B2 (en) | Optical element with an antireflection coating, projection objective, and exposure apparatus comprising such an element | |
| US20060050371A1 (en) | Antireflection coating for ultraviolet light at large angles of incidence | |
| JP2004302113A (en) | Antireflection film, optical member, optical system and projection exposure apparatus, and manufacturing method for antireflection film | |
| JPH10160915A (en) | Mirror for excimer laser | |
| JP2002014202A (en) | Optical thin film, optical element and exposure system | |
| JPH07107563B2 (en) | Anti-reflection film | |
| JP2004260081A (en) | Reflector for ultraviolet region and projection aligner employing it | |
| JP2003014921A (en) | Mirror for uv ray and exposure device using the same | |
| JPH10253802A (en) | Reflection preventive film | |
| JP2002189101A (en) | Antireflection film, optical element and exposure device | |
| JP3232727B2 (en) | 2-wavelength anti-reflection coating | |
| US20070099001A1 (en) | Blister resistant optical coatings | |
| JPH11248903A (en) | Reflection preventive film | |
| US20090244507A1 (en) | Optical member, light routing unit, and exposure apparatus | |
| JP2001004803A (en) | Reflection preventing film and optical element | |
| JP2004260080A (en) | Reflector for ultraviolet region and projection aligner employing it | |
| JP2000131503A (en) | Optical member | |
| JP2002311206A (en) | Antireflection film, optical element and aligner mounting the same | |
| JP2002311209A (en) | Antireflection film, optical element and aligner mounting the same | |
| JPH11101903A (en) | High reflection mirror for excimer laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061110 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090511 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090519 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090721 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090908 |