JP2001519044A - 光学素子を製造する方法およびそれから得る光学素子 - Google Patents
光学素子を製造する方法およびそれから得る光学素子Info
- Publication number
- JP2001519044A JP2001519044A JP54279998A JP54279998A JP2001519044A JP 2001519044 A JP2001519044 A JP 2001519044A JP 54279998 A JP54279998 A JP 54279998A JP 54279998 A JP54279998 A JP 54279998A JP 2001519044 A JP2001519044 A JP 2001519044A
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- photosensitive composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Polymerisation Methods In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Glass Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.光学素子を製造する方法であって: a)少なくとも1つのエチレン性不飽和基を有する少なくとも1種の第1フリ ーラジカル重合性モノマー、オリゴマーもしくはポリマー成分および少なくとも 1種の第1光開始剤の混和物を含んでなる第1感光性組成物を基体にコーティン グすること; b)該第1感光性組成物を十分な化学線にイメージ的に露光してその重合を行 なわせて、イメージ領域および非イメージ領域を形成させ;ついで、光伝達パタ ーン化されたコアを形成するイメージ領域を除去せずに該非イメージ領域を除去 すること; c)少なくとも1つのエチレン性不飽和基を有する少なくとも1種の第2フリ ーラジカル重合性モノマー、オリゴマーもしくはポリマー成分および少なくとも 1種の第2光重合開始剤の混和物を含んでなる第2感光性組成物を該パターン化 されたコアにコーティングすること; d)該第1および第2感光性組成物を十分な化学線に露光して、重合された第 2感光性組成物がコアを包むクラッドを形成するように該第2感光性組成物を重 合させること、この際、該重合されたコアは約80℃以下のガラス転移温度を有 し、該重合されたクラッドは約60℃以下のガラス転移温度を有し、そして該ク ラッドの屈折率は該コアの屈折率より小さい を含んでなる方法。 2.第1感光性層を基体上にコーティングする前に、該基体と該第1感光性 層との間の該基体上に第3感光性組成物の層をコーティングすること、この際、 該第3感光性組成物は、少なくとも1つのエチレン性不飽和基を有する第3フリ ーラジカル重合性モノマー、オリゴマーもしくはポリマー成分および第3光重合 開始剤の混和物を含んでなる;ついで、該第1感光性層を該基体上にコーティン グする前に、前記第3感光性組成物を十分な化学線に露光して該基体上に均一な 重合層を提供すること、この際、該重合された第3感光性組成物は約60℃以下 のガラス転移温度を有する、を更に含んでなる、請求項1に記載の方法。 3.工程(d)が、第2感光性組成物を十分な化学線にイメージ的に露光し て該第2感光性組成物の重合をもたらし、該重合された第2感光性組成物がコア をイメージ的に包みかつ該コアと一致するクラッドを形成するように該第2感光 性組成物のイメージ領域および非イメージ領域を形成し、ついで該第2感光性組 成物のイメージ領域を除去せずに該第2感光性組成物の非イメージ領域を除去す ることを含んでなる、請求項1に記載の方法。 4.各々のフリーラジカル重合性モノマー、オリゴマーもしくはポリマーが 、少なくとも2つのエチレン性不飽和基を有するアクリレートもしくはメタクリ レートである、請求項1に記載の方法。 5.各々の感光性組成物が、抗酸化剤、光安定剤、体膨張剤、充填剤、フリ ーラジカルスカベンジャー、コントラスト増強剤、ニトロンおよび染料からなる 群より選ばれる1つもしくはそれ以上の化合物を更に含んでなる、請求項1に記 載の方法。 6.基体;該基体の表面上のパターン化された光伝達コア組成物;および該 コアのパターン上の光反射クラッド組成物を含んでなる光学素子であって、該コ ア組成物が約80℃以下のガラス転移温度を有しかつ該クラッド組成物が約60 ℃以下のガラス転移温度を有し、そして該クラッドの屈折率が該コアの屈折率よ りも小さい光学素子。 7.基体とコアとの間の該基体上に光反射クラッド組成物のもう1つの層を 含んでなり、前記クラッド組成物が約60℃以下のガラス転移温度を有する、請 求項6に記載の光学素子。 8.基体が、シリコン、二酸化ケイ素、ヒ化ガリウム、窒化ケイ素、ガラス 、石英、プラスチック、セラミックおよび結晶性材料からなる群より選ばれる、 請求項6に記載の光学素子。 9.a)パターン化された光伝達コアが、基体の表面上に適用された第1感 光性組成物をイメージ的に露光して現像することにより形成され、該第1感光性 組成物は、少なくとも1つのエチレン性不飽和基を有する少なくとも1種の第1 フリーラジカル重合性モノマー、オリゴマーもしくはポリマー成分および少なく とも1種の第1光重合開始剤を含んでなり;そして b)クラッドが、パターン化されたコア上に適用された第2感光性組成物を露 光することにより成形され、該第2感光性組成物は、少なくとも1つのエチレン 性不飽和基を有する少なくとも1種の第2フリーラジカル重合性モノマー、オリ ゴマーもしくはポリマー成分および少なくとも1種の第2光重合開始剤を含んで なる、請求項6に記載の光学素子。 10.工程(b)が、パターン化された第2感光性組成物がコアのパターンを イメージ的に包みかつ一致するクラッドを成形するように、パターン化されたコ ア上の第2感光性組成物をイメージ的に露光して現像することにより行なわれる 、請求項9に記載の光学素子。 11.第1感光性層を基体上にコーティングする前に、該基体と該第1感光性 層との間の該基体上に第3感光性組成物の層を適用すること、この際、該第3感 光性組成物は、少なくとも1つのエチレン性不飽和基を有する少なくとも1種の 第3フリーラジカル重合性モノマー、オリゴマーもしくはポリマー成分および少 なくとも1種の第3光重合開始剤の混和物を含んでなる;ついで、該第1感光性 層を該基体上にコーティングする前に、前記第3感光性組成物を十分な化学線に 露光して該基体上に均一な重合層を提供すること、この際、該重合された第3感 光性組成物は約60℃以下のガラス転移温度を有する、を含んでなる追加の工程 により形成される、請求項9に記載の光学素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US08/838,344 | 1997-04-08 | ||
US08/838,344 US6335149B1 (en) | 1997-04-08 | 1997-04-08 | High performance acrylate materials for optical interconnects |
PCT/US1998/005609 WO1998045759A1 (en) | 1997-04-08 | 1998-03-23 | Method of producing an optical element and optical element therefrom |
Publications (2)
Publication Number | Publication Date |
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JP2001519044A true JP2001519044A (ja) | 2001-10-16 |
JP3986567B2 JP3986567B2 (ja) | 2007-10-03 |
Family
ID=25276866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54279998A Expired - Fee Related JP3986567B2 (ja) | 1997-04-08 | 1998-03-23 | 光学素子を製造する方法およびそれから得る光学素子 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6335149B1 (ja) |
EP (1) | EP0974076B1 (ja) |
JP (1) | JP3986567B2 (ja) |
KR (1) | KR100536486B1 (ja) |
AT (1) | ATE245828T1 (ja) |
CA (1) | CA2286275A1 (ja) |
DE (1) | DE69816605T2 (ja) |
TW (1) | TW461982B (ja) |
WO (1) | WO1998045759A1 (ja) |
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-
1997
- 1997-04-08 US US08/838,344 patent/US6335149B1/en not_active Expired - Lifetime
-
1998
- 1998-03-23 DE DE69816605T patent/DE69816605T2/de not_active Expired - Lifetime
- 1998-03-23 AT AT98913034T patent/ATE245828T1/de not_active IP Right Cessation
- 1998-03-23 JP JP54279998A patent/JP3986567B2/ja not_active Expired - Fee Related
- 1998-03-23 EP EP98913034A patent/EP0974076B1/en not_active Expired - Lifetime
- 1998-03-23 WO PCT/US1998/005609 patent/WO1998045759A1/en active IP Right Grant
- 1998-03-23 KR KR10-1999-7009276A patent/KR100536486B1/ko not_active IP Right Cessation
- 1998-03-23 CA CA002286275A patent/CA2286275A1/en not_active Abandoned
- 1998-05-26 TW TW087105270A patent/TW461982B/zh not_active IP Right Cessation
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2001
- 2001-08-23 US US09/939,508 patent/US6512874B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6335149B1 (en) | 2002-01-01 |
WO1998045759A1 (en) | 1998-10-15 |
EP0974076B1 (en) | 2003-07-23 |
KR20010006196A (ko) | 2001-01-26 |
DE69816605D1 (de) | 2003-08-28 |
DE69816605T2 (de) | 2004-06-09 |
CA2286275A1 (en) | 1998-10-15 |
JP3986567B2 (ja) | 2007-10-03 |
ATE245828T1 (de) | 2003-08-15 |
US6512874B2 (en) | 2003-01-28 |
KR100536486B1 (ko) | 2005-12-14 |
US20020034711A1 (en) | 2002-03-21 |
TW461982B (en) | 2001-11-01 |
EP0974076A1 (en) | 2000-01-26 |
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