JP2001352018A - Heat transfer member for semiconductor device and cooling structure thereof - Google Patents
Heat transfer member for semiconductor device and cooling structure thereofInfo
- Publication number
- JP2001352018A JP2001352018A JP2000170963A JP2000170963A JP2001352018A JP 2001352018 A JP2001352018 A JP 2001352018A JP 2000170963 A JP2000170963 A JP 2000170963A JP 2000170963 A JP2000170963 A JP 2000170963A JP 2001352018 A JP2001352018 A JP 2001352018A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- heat transfer
- transfer member
- cpu
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置用伝熱
部材および半導体装置の冷却構造に関する。The present invention relates to a heat transfer member for a semiconductor device and a cooling structure for the semiconductor device.
【０００２】[0002]
【従来の技術】ＣＰＵ等の半導体装置では、メモリの大
容量化やロジックの多機能化、高集積化に伴い、消費電
力が増加し、それに伴い半導体装置からの発熱による温
度上昇が問題となってきている。このため、動作時に半
導体装置を所定温度以下に保つための工夫が種々なされ
ている。2. Description of the Related Art In a semiconductor device such as a CPU, power consumption increases with an increase in memory capacity, multi-functionality of logic, and high integration, and a rise in temperature due to heat generated by the semiconductor device becomes a problem. Is coming. For this reason, various measures have been taken to keep the semiconductor device at a predetermined temperature or lower during operation.
【０００３】その一つにヒートシンクを用いて半導体装
置を積極的に冷却する方法がある。この冷却方法は、例
えば、図６に示すように、半導体装置の一つであるＣＰ
Ｕ１の上面、特にＣＰＵ１の発熱部である上方へ突出す
るコア部分１ａの上面に、ヒートシンク２の下面を接触
させ、コア部分１ａで発生する熱を、ヒートシンク２の
フィン部分２ａを介して積極的に外部へ放出するもので
ある。One of them is a method of actively cooling a semiconductor device using a heat sink. This cooling method is performed, for example, as shown in FIG.
The lower surface of the heat sink 2 is brought into contact with the upper surface of the U1, particularly the upper surface of the core portion 1a that protrudes upward, which is a heat-generating portion of the CPU 1, and the heat generated in the core portion 1a is actively transmitted through the fin portion 2a of the heat sink 2. Is released to the outside.
【０００４】[0004]
【発明が解決しようとする課題】上述した従来の半導体
装置の冷却方法には、次の欠点があった。 ａ） ヒートシンク２が、ＣＰＵ１のコア部分１の上面
にしか接触しておらず、接触する面積が小さいのでＣＰ
Ｕ１からヒートシンク２の伝熱効率が悪く、この結果、
ヒートシンク２からの放熱量を大きくできないという欠
点があった。 ｂ） また、上述したようにヒートシンク２がＣＰＵ１
のコア部分１ａの上面にしか接触しておらず、コア部分
１ａ自体の面積が小さいこともあって、ヒートシンク２
の安定性が悪いという欠点があった。このことは、この
ＣＰＵ１が取り付けられた基板に振動があったり、ある
いはＣＰＵ１が搭載された装置が傾いて取り付けられた
場合に、ＣＰＵ１とヒートシンク２との間に隙間が生
じ、ヒートシンク２からの放熱量がますます低下すると
いう不具合にもつながっていた。The above-mentioned conventional method for cooling a semiconductor device has the following disadvantages. a) The heat sink 2 is in contact only with the upper surface of the core portion 1 of the CPU 1 and the contact area is small.
From U1, the heat transfer efficiency of the heat sink 2 is poor, and as a result,
There is a disadvantage that the amount of heat radiation from the heat sink 2 cannot be increased. b) As described above, the heat sink 2 is connected to the CPU 1
Because only the upper surface of the core portion 1a is in contact with the upper surface of the core portion 1a and the area of the core portion 1a itself is small, the heat sink 2
Has the disadvantage of poor stability. This means that when the substrate on which the CPU 1 is mounted has vibrations or when the device on which the CPU 1 is mounted is mounted at an angle, a gap is formed between the CPU 1 and the heat sink 2, and the heat is released from the heat sink 2. This has led to a problem that the amount of heat has been further reduced.
【０００５】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、半導体装置の冷却効率を
格段に向上させることができ、またヒートシンク等の冷
却装置の安定性も得られ、しかも、現在使用中のヒート
シンク等の冷却装置に加工を加えることなく半導体装置
の冷却効率を各段に向上させることができる、半導体装
置用伝熱部材および半導体装置の冷却構造を提供するこ
とにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances. It is an object of the present invention to significantly improve the cooling efficiency of a semiconductor device and to obtain the stability of a cooling device such as a heat sink. In addition, it is an object of the present invention to provide a semiconductor device heat transfer member and a semiconductor device cooling structure that can improve the cooling efficiency of a semiconductor device in each stage without processing a cooling device such as a heat sink currently used. .
【０００６】[0006]
【課題を解決するための手段】本発明は、前記課題を解
決するため、以下の構成を採用している。請求項１にか
かる発明では、半導体装置とヒートシンク等の冷却装置
との間に介装される半導体装置用伝熱部材であって、全
体が略平板状に形成され、その前記半導体装置に対向す
る面に半導体装置のコア部分を嵌入するための凹部が形
成されていることを特徴としている。請求項２にかかる
発明では、半導体装置とヒートシンク等の冷却装置との
間に介装される半導体装置用伝熱部材であって、全体が
略平板状に形成され、その前記半導体装置に対向する面
に半導体装置を嵌入するための凹部が形成されているこ
とを特徴としている。請求項３にかかる発明では、半導
体装置とヒートシンク等の冷却装置との間に半導体装置
用伝熱部材が介装され、前記半導体装置用伝熱部材は、
全体が略平板状に形成され、その半導体装置に対向する
面に半導体装置または半導体装置のコア部分が嵌入され
る凹部が形成されていることを特徴としている。請求項
４にかかる発明では、前記半導体装置用伝熱部材と半導
体装置または半導体装置のコア部分との間に、グリス等
の熱伝達用の充填材が充填されていることを特徴として
いる。The present invention employs the following configuration in order to solve the above-mentioned problems. According to the first aspect of the present invention, there is provided a heat transfer member for a semiconductor device interposed between a semiconductor device and a cooling device such as a heat sink, wherein the heat transfer member is formed in a substantially flat plate shape and faces the semiconductor device. The semiconductor device is characterized in that a concave portion for fitting a core portion of the semiconductor device is formed on the surface. According to the second aspect of the present invention, there is provided a heat transfer member for a semiconductor device interposed between a semiconductor device and a cooling device such as a heat sink, the whole being formed in a substantially flat plate shape and facing the semiconductor device. The semiconductor device is characterized in that a concave portion for fitting the semiconductor device is formed on the surface. In the invention according to claim 3, a semiconductor device heat transfer member is interposed between the semiconductor device and a cooling device such as a heat sink, and the semiconductor device heat transfer member includes:
The semiconductor device is characterized in that the whole is formed in a substantially flat plate shape, and a concave portion is formed on a surface facing the semiconductor device, into which the semiconductor device or a core portion of the semiconductor device is fitted. The invention according to claim 4 is characterized in that a filler for heat transfer such as grease is filled between the semiconductor device heat transfer member and the semiconductor device or the core portion of the semiconductor device.
【０００７】本発明では、半導体装置とヒートシンクと
の間に半導体装置用伝熱部材を介装し、この半導体装置
用伝熱部材の半導体装置に対向する面に凹部を形成し、
この凹部に半導体装置または半導体装置のコア部分を嵌
入するものであるから、半導体装置または半導体装置の
コア部分は、半導体装置用伝熱部材に対して、一面のみ
ならずその側面も半導体装置用伝熱部材に接触すること
となり、半導体装置と半導体装置用伝熱部材との間の良
好な熱伝達が確保される。このため、半導体装置の熱は
半導体装置用伝熱部材を介してヒートシンクに伝達さ
れ、ヒートシンクから積極的に外部へ放出される。In the present invention, a heat transfer member for a semiconductor device is interposed between a semiconductor device and a heat sink, and a concave portion is formed on a surface of the heat transfer member for a semiconductor device facing the semiconductor device.
Since the semiconductor device or the core portion of the semiconductor device is fitted into the recess, the semiconductor device or the core portion of the semiconductor device is not only one side but also the side surface of the semiconductor device heat transfer member. As a result, the heat member comes into contact with the heat member, and good heat transfer between the semiconductor device and the heat transfer member for the semiconductor device is ensured. For this reason, the heat of the semiconductor device is transmitted to the heat sink via the heat transfer member for the semiconductor device, and is positively released from the heat sink to the outside.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【０００９】＜第１の実施の形態＞図１〜図４は本発明
の第１の実施の形態を示す。図１は半導体装置用伝熱部
材１０を示し、この半導体装置用伝熱部材１０は、図２
および図３に示すように、ＣＰＵ１等の半導体装置とヒ
ートシンク２との間に介装されるものである。<First Embodiment> FIGS. 1 to 4 show a first embodiment of the present invention. FIG. 1 shows a heat transfer member 10 for a semiconductor device.
As shown in FIG. 3, the heat sink 2 is interposed between the semiconductor device such as the CPU 1 and the heat sink 2.
【００１０】また、半導体装置用伝熱部材１０は、全体
が略平板状に形成されている。なお、半導体装置用伝熱
部材１０の形状は、この実施の形態では、取り付けられ
る部材であるＣＰＵ１に対応して略正方形状としている
が、ＣＰＵ１の形状が変わればそれに合わせて変わるこ
ととなる。The heat transfer member 10 for a semiconductor device is generally formed in a substantially flat plate shape. In this embodiment, the shape of the heat transfer member 10 for a semiconductor device is substantially square in correspondence with the CPU 1 to which the semiconductor device is attached. However, if the shape of the CPU 1 changes, the shape will change accordingly.
【００１１】また、半導体装置用伝熱部材１０の片側の
面、具体的には例えばＣＰＵ１にセットされる際には該
ＣＰＵ１に対向する面に、ＣＰＵ１のコア部分１ａを嵌
入するための凹部１１が形成されている。凹部１１の内
側寸法は、コア部分１ａがすみやかに嵌入できるよう
に、コア部分１ａの寸法よりも若干大きめに設定されて
いる。また、凹部１１の深さＬａは、ＣＰＵ１のコア部
分１ａの高さＬｂと等しいかそれよりも若干浅めに設定
されている。このため、半導体装置用伝熱部材１０の凹
部１１にＣＰＵ１のコア部分１ａが嵌入された際に、半
導体装置用伝熱部材１０のＣＰＵ１側の端面１０ａがＣ
ＰＵ１の基板上面１ｂに接することがない場合はあって
も、半導体装置用伝熱部材１０の凹部１１の底面１１ａ
は必ずＣＰＵ１のコア部分１ａの上面１ａａに接するよ
うになっている。また、半導体装置用伝熱部材１０は熱
伝導率の優れた材料、例えば、銅やアルミニウムまたは
それらの合金によって作られる。A recess 11 for fitting the core portion 1a of the CPU 1 into one surface of the semiconductor device heat transfer member 10, specifically, for example, a surface facing the CPU 1 when the CPU 1 is set in the CPU 1. Are formed. The inner dimensions of the recess 11 are set slightly larger than the dimensions of the core portion 1a so that the core portion 1a can be quickly fitted. The depth La of the recess 11 is set equal to or slightly smaller than the height Lb of the core portion 1a of the CPU 1. Therefore, when the core portion 1a of the CPU 1 is fitted into the concave portion 11 of the heat transfer member 10 for a semiconductor device, the end surface 10a of the heat transfer member 10
The bottom surface 11a of the concave portion 11 of the heat transfer member 10 for a semiconductor device may be in contact with the upper surface 1b of the substrate of the PU 1 even if it does not contact the upper surface 1b.
Are always in contact with the upper surface 1aa of the core portion 1a of the CPU 1. The heat transfer member 10 for a semiconductor device is made of a material having excellent heat conductivity, for example, copper, aluminum, or an alloy thereof.
【００１２】また、半導体装置用伝熱部材１０の凹部１
１とＣＰＵ１のコア部分１ａとの間にはグリスが充填さ
れ、これにより両部材同士の間では良好な熱伝達が行わ
れるようになっている。なお、このグリスは、半導体装
置用伝熱部材１０とヒートシンク２との間にも必要に応
じて充填される。また、凹部１１とＣＰＵ１のコア部分
１ａとの間には充填される熱伝達用の充填材は、なんら
グリスに限られることなく充填材であってもよい。The recess 1 of the heat transfer member 10 for a semiconductor device
Grease is filled between the first member 1 and the core portion 1a of the CPU 1, so that good heat transfer is performed between the two members. The grease is also filled between the semiconductor device heat transfer member 10 and the heat sink 2 as necessary. Further, the filler for heat transfer filled between the recess 11 and the core portion 1a of the CPU 1 is not limited to grease but may be a filler.
【００１３】次に、上記構成の半導体装置の冷却構造の
作用について説明する。この第１の実施の形態の半導体
装置の冷却構造では、ＣＰＵ１とヒートシンク２との間
に半導体装置用伝熱部材１０を介装し、この半導体装置
用伝熱部材１０のＣＰＵ１に対向する面に凹部１１を形
成し、この凹部１１にＣＰＵ１の発熱部分であるコア部
分１ａを嵌入しているから、ＣＰＵ１のコア部分１ａ
は、半導体装置用伝熱部材１０に対して、上面１ａａの
みならず側面１ａｂも半導体装置用伝熱部材１０に接触
する。このため、コア部分１ａで生じた熱は、これら上
面１ａａと側面１ａｂの両面を介して半導体装置用伝熱
部材１０に積極的に伝達される。そして、ＣＰＵ１から
半導体用伝熱部材１０へ伝達された熱は、その後ヒート
シンク２に伝達され、ヒートシンク２の主にフィン部分
２ａから外部へ放出される。Next, the operation of the cooling structure of the semiconductor device having the above configuration will be described. In the cooling structure for a semiconductor device according to the first embodiment, a heat transfer member 10 for a semiconductor device is interposed between a CPU 1 and a heat sink 2, and the heat transfer member 10 for a semiconductor device is provided on a surface facing the CPU 1. Since the concave portion 11 is formed and the core portion 1a which is a heat generating portion of the CPU 1 is fitted into the concave portion 11, the core portion 1a of the CPU 1 is formed.
As for the semiconductor device heat transfer member 10, not only the upper surface 1aa but also the side surface 1ab contacts the semiconductor device heat transfer member 10. Therefore, the heat generated in the core portion 1a is positively transmitted to the semiconductor device heat transfer member 10 via both the upper surface 1aa and the side surface 1ab. Then, the heat transmitted from the CPU 1 to the heat transfer member for semiconductor 10 is transmitted to the heat sink 2 and is released to the outside mainly from the fin portion 2a of the heat sink 2.
【００１４】このようにＣＰＵ１のコア部分１ａからの
放熱が、コア部分１ａの上面１ａａに止まらずコア部分
１ａの側面１ａｂからも行われるので、ＣＰＵ１の冷却
効率は従来のものに比べて格段に向上することとなっ
た。As described above, since the heat radiation from the core portion 1a of the CPU 1 is not limited to the upper surface 1aa of the core portion 1a but also from the side surface 1ab of the core portion 1a, the cooling efficiency of the CPU 1 is much higher than that of the conventional one. It was decided to improve.
【００１５】また、半導体装置用伝熱部材１０は、ＣＰ
Ｕ１とヒートシンク２と間において、ＣＰＵ１のコア部
分１ａの上側のみならずＣＰＵ１の基板１ｂの上側にも
介装されており、たとえ、半導体装置用伝熱部材１０と
ＣＰＵ１の基板１ｂとの間に隙間が生じていたとして
も、振動等でヒートシンク２ととも半導体装置用伝熱部
材１０がわずかに揺れる場合に、半導体装置用伝熱部材
１０がＣＰＵ１の基板１ｂに接することとなってそれ以
上の揺れが規制される。このため、ヒートシンク２の安
定性は向上する。Further, the heat transfer member 10 for a semiconductor device comprises a CP.
Between the U1 and the heat sink 2, not only above the core portion 1a of the CPU 1 but also above the substrate 1b of the CPU 1, for example, between the heat transfer member 10 for a semiconductor device and the substrate 1b of the CPU 1. Even if there is a gap, when the semiconductor device heat transfer member 10 slightly swings with the heat sink 2 due to vibration or the like, the semiconductor device heat transfer member 10 comes into contact with the substrate 1b of the CPU 1 and further increases. Shaking is regulated. Therefore, the stability of the heat sink 2 is improved.
【００１６】なお、ヒートシンク２の底面に直接コア部
分嵌入用の凹部を形成することも考えられるが、そうす
ると、ヒートシンク２の製作工数が増えて複雑になり、
大幅なコストアップにつながるおそれがある。これに比
べて、この実施の形態のように、ヒートシンク２とは別
に半導体装置伝熱用部材１０を設け、この半導体装置伝
熱用部材１０にコア部分嵌入用の凹部１１を設ける構成
にすれば、半導体装置用伝熱部材はプレス加工等により
簡単に作れるので、大幅なコストダウンは避けられる。
また、このようにヒートシンク２とは別に半導体装置伝
熱用部材１０を設ける構成にすれば、既存のＣＰＵ１に
も後付けによってヒートシンク２との間に組み付けるこ
とができ、この点においても利点が得られる。Although it is conceivable to form a concave portion for fitting the core portion directly on the bottom surface of the heat sink 2, this increases the number of manufacturing steps of the heat sink 2 and complicates it.
This may lead to a significant cost increase. On the other hand, as in this embodiment, the semiconductor device heat transfer member 10 is provided separately from the heat sink 2, and the semiconductor device heat transfer member 10 is provided with the concave portion 11 for fitting the core portion. Since the heat transfer member for a semiconductor device can be easily formed by press working or the like, a significant cost reduction can be avoided.
Further, if the semiconductor device heat transfer member 10 is provided separately from the heat sink 2, the existing CPU 1 can be attached to the heat sink 2 by retrofitting, and an advantage is also obtained in this respect. .
【００１７】＜第２の実施の形態＞図４は、この発明の
第２の実施の形態を示す。この実施の形態では、上面が
フラットなＣＰＵ１を冷却する場合を想定している。こ
の場合には、ＣＰＵ１の主要部分全てを半導体装置用伝
熱部材１０の凹部１１に嵌入させている。このような構
成にしても、ＣＰＵ１から半導体装置用伝熱部材１０へ
の熱伝達は、ＣＰＵ１の上面２０のみならずＣＰＵ１の
側面２１からも行われるので、ＣＰＵ１の冷却効率は従
来のものに比べて格段に向上することとなった。<Second Embodiment> FIG. 4 shows a second embodiment of the present invention. In this embodiment, it is assumed that the CPU 1 having a flat upper surface is cooled. In this case, all the main parts of the CPU 1 are fitted into the concave portions 11 of the semiconductor device heat transfer member 10. Even in such a configuration, the heat transfer from the CPU 1 to the semiconductor device heat transfer member 10 is performed not only from the upper surface 20 of the CPU 1 but also from the side surface 21 of the CPU 1, so that the cooling efficiency of the CPU 1 is lower than that of the conventional one. It was decided to improve significantly.
【００１８】なお、前記各実施の形態はあくまで例示で
あり、必要に応じて発明の趣旨を変更しない限り適宜設
計変更可能である。例えば、上記第１、第２の実施の形
態では、いずれも半導体装置用伝熱部材１０に、半導体
装置または半導体装置のコア部分嵌入用の凹部１１をた
だ一つしか設けていないが、これに限られることなく、
図５に示すように複数の凹部１１を設け、それら凹部１
１に嵌入させた複数の半導体装置を一つのヒートシンク
で冷却するような構成にしてもよい。また、上記第１、
第２の実施の形態では、冷却対象となる半導体装置の例
としてＣＰＵを挙げて説明したが、勿論、これに限られ
ることなく、他の半導体装置、例えば、グラフィックチ
ップや、ＤＰＳを冷却する場合にも、本発明は適用可能
である。また、上記実施例では、半導体装置を冷却する
冷却装置の例としてヒートシンクを例に挙げて説明した
が、これに限られることなく、例えば、冷媒を通じて半
導体装置を冷却するような冷却装置を用いる場合にも、
本発明は勿論適用可能である。The above embodiments are merely examples, and the design can be changed as needed without changing the gist of the invention. For example, in each of the first and second embodiments, the semiconductor device heat transfer member 10 is provided with only one recess 11 for fitting a semiconductor device or a core part of the semiconductor device. Without limitation
As shown in FIG. 5, a plurality of recesses 11 are provided,
A configuration may be adopted in which a plurality of semiconductor devices fitted into one are cooled by one heat sink. In addition, the first,
In the second embodiment, a CPU has been described as an example of a semiconductor device to be cooled. However, the present invention is not limited to this, and other semiconductor devices, such as a graphic chip or a DPS, may be cooled. In addition, the present invention is applicable. Further, in the above embodiment, the heat sink is described as an example of the cooling device for cooling the semiconductor device.However, the present invention is not limited to this. For example, when a cooling device that cools the semiconductor device through a refrigerant is used. Also,
The invention is of course applicable.
【００１９】[0019]
【発明の効果】以上説明したように本発明によれば、半
導体装置用伝熱部材に凹部を形成し、この凹部に半導体
装置または半導体装置のコア部分を嵌入するものである
から、半導体装置または半導体装置のコア部分は、半導
体装置用伝熱部材に対して、一面のみならずその側面も
半導体装置用伝熱部材に接触することとなり、半導体装
置と半導体装置用伝熱部材との間の良好な熱伝達が確保
され、ひいては、従来に比べて半導体装置の冷却効率を
格段に向上させることができた。また、ヒートシンク等
の冷却装置は半導体装置用伝熱部材を介して半導体装置
の例えば上側に載置されることとなり、半導体装置に上
方へ突出するコア部分がある場合でも、コア部分の上部
のみならず該コア部分の回りにも半導体装置用伝熱部材
が介装されることとなり、半導体装置用伝熱部材が半導
体装置の凹凸を吸収する働きをするので、ヒートシンク
等の冷却装置の安定性が向上する。As described above, according to the present invention, a concave portion is formed in a heat transfer member for a semiconductor device, and the semiconductor device or the core portion of the semiconductor device is fitted into the concave portion. The core portion of the semiconductor device contacts the semiconductor device heat transfer member not only on one side but also on the side thereof with respect to the semiconductor device heat transfer member. Heat transfer was ensured, and the cooling efficiency of the semiconductor device was significantly improved as compared with the related art. In addition, a cooling device such as a heat sink is mounted on the semiconductor device via the semiconductor device heat transfer member, for example, above the semiconductor device. Even if the semiconductor device has a core portion protruding upward, if only the upper portion of the core portion is provided. The heat transfer member for the semiconductor device is also interposed around the core portion, and the heat transfer member for the semiconductor device functions to absorb the unevenness of the semiconductor device. improves.
【図１】 本発明の第１の実施の形態を示す半導体装置
用伝熱部材の斜視図である。FIG. 1 is a perspective view of a heat transfer member for a semiconductor device according to a first embodiment of the present invention.
【図２】 本発明の第１の実施の形態を示す半導体装置
の冷却構造の断面図である。FIG. 2 is a cross-sectional view of a cooling structure of the semiconductor device according to the first embodiment of the present invention.
【図３】 本発明の第１の実施の形態を示す半導体装置
の冷却構造の分解斜視図である。FIG. 3 is an exploded perspective view of a cooling structure of the semiconductor device according to the first embodiment of the present invention.
【図４】 本発明の第２の実施の形態を示す半導体装置
の冷却構造の断面図である。FIG. 4 is a cross-sectional view of a cooling structure of a semiconductor device according to a second embodiment of the present invention.
【図５】 本発明の変形例を示す半導体装置用伝熱部材
の斜視図である。FIG. 5 is a perspective view of a heat transfer member for a semiconductor device showing a modification of the present invention.
【図６】 従来の半導体装置の冷却構造を示す断面図で
ある。FIG. 6 is a sectional view showing a cooling structure of a conventional semiconductor device.
１ ＣＰＵ（半導体装置） １ａ コア部分 １ｂ 基板 ２ ヒートシンク（冷却装置） ２ａ フィン部分 １０ 半導体装置用伝熱部材 １０ａ 端面 １１ 凹部 Reference Signs List 1 CPU (semiconductor device) 1a core portion 1b substrate 2 heat sink (cooling device) 2a fin portion 10 heat transfer member for semiconductor device 10a end face 11 concave portion
Claims (4)
との間に介装される半導体装置用伝熱部材であって、 全体が略平板状に形成され、その前記半導体装置に対向
する面に半導体装置のコア部分を嵌入するための凹部が
形成されていることを特徴とする半導体装置用伝熱部
材。1. A heat transfer member for a semiconductor device interposed between a semiconductor device and a cooling device such as a heat sink, wherein the heat transfer member is formed in a substantially plate shape as a whole, and has a semiconductor facing a surface facing the semiconductor device. A heat transfer member for a semiconductor device, wherein a concave portion for fitting a core portion of the device is formed.
との間に介装される半導体装置用伝熱部材であって、 全体が略平板状に形成され、その前記半導体装置に対向
する面に半導体装置を嵌入するための凹部が形成されて
いることを特徴とする半導体装置用伝熱部材。2. A heat transfer member for a semiconductor device interposed between a semiconductor device and a cooling device such as a heat sink, wherein the heat transfer member is formed substantially in the shape of a substantially flat plate, and a semiconductor is provided on a surface facing the semiconductor device. A heat transfer member for a semiconductor device, wherein a concave portion for fitting the device is formed.
との間に半導体装置用伝熱部材が介装され、 前記半導体装置用伝熱部材は、全体が略平板状に形成さ
れ、その半導体装置に対向する面に半導体装置または半
導体装置のコア部分が嵌入される凹部が形成されている
ことを特徴とする半導体装置の冷却構造。3. A heat transfer member for a semiconductor device is interposed between a semiconductor device and a cooling device such as a heat sink. The heat transfer member for a semiconductor device is entirely formed in a substantially flat plate shape. A cooling structure for a semiconductor device, wherein a concave portion in which a semiconductor device or a core portion of the semiconductor device is fitted is formed on an opposing surface.
または半導体装置のコア部分との間には、グリス等の熱
伝達用の充填材が充填されていることを特徴とする請求
項３記載の半導体装置の冷却構造。4. A heat transfer filler such as grease is filled between the semiconductor device heat transfer member and the semiconductor device or a core portion of the semiconductor device. Semiconductor device cooling structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000170963A JP2001352018A (en) | 2000-06-07 | 2000-06-07 | Heat transfer member for semiconductor device and cooling structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000170963A JP2001352018A (en) | 2000-06-07 | 2000-06-07 | Heat transfer member for semiconductor device and cooling structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001352018A true JP2001352018A (en) | 2001-12-21 |
Family
ID=18673583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000170963A Pending JP2001352018A (en) | 2000-06-07 | 2000-06-07 | Heat transfer member for semiconductor device and cooling structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001352018A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010194894A (en) * | 2009-02-25 | 2010-09-09 | Brother Ind Ltd | Electronic component heat radiation structure, manufacturing method therefor, and liquid delivery device |
| JP2020513694A (en) * | 2016-12-21 | 2020-05-14 | マイクロン テクノロジー，インク． | Semiconductor die assembly with heat spreader extending through underlying interposer and related techniques |
-
2000
- 2000-06-07 JP JP2000170963A patent/JP2001352018A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010194894A (en) * | 2009-02-25 | 2010-09-09 | Brother Ind Ltd | Electronic component heat radiation structure, manufacturing method therefor, and liquid delivery device |
| JP2020513694A (en) * | 2016-12-21 | 2020-05-14 | マイクロン テクノロジー，インク． | Semiconductor die assembly with heat spreader extending through underlying interposer and related techniques |
| US10971422B2 (en) | 2016-12-21 | 2021-04-06 | Micron Technology, Inc. | Semiconductor die assembly having a heat spreader that extends through an underlying interposer and related technology |
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