JP2001338754A - Electroluminescent element - Google Patents
Electroluminescent elementInfo
- Publication number
- JP2001338754A JP2001338754A JP2000159372A JP2000159372A JP2001338754A JP 2001338754 A JP2001338754 A JP 2001338754A JP 2000159372 A JP2000159372 A JP 2000159372A JP 2000159372 A JP2000159372 A JP 2000159372A JP 2001338754 A JP2001338754 A JP 2001338754A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- protective film
- layer
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims description 77
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 14
- 229910000077 silane Inorganic materials 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 79
- 239000000126 substance Substances 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- -1 phenylene vinylene Chemical group 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004083 survival effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- MVVGSPCXHRFDDR-UHFFFAOYSA-N 2-(1,3-benzothiazol-2-yl)phenol Chemical compound OC1=CC=CC=C1C1=NC2=CC=CC=C2S1 MVVGSPCXHRFDDR-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- KHLRJDNGHBXOSV-UHFFFAOYSA-N 5-trimethoxysilylpentane-1,3-diamine Chemical compound CO[Si](OC)(OC)CCC(N)CCN KHLRJDNGHBXOSV-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KESRRRLHHXXBRW-UHFFFAOYSA-N C1=CC=NC2=C3C(O)=CC=CC3=CC=C21 Chemical compound C1=CC=NC2=C3C(O)=CC=CC3=CC=C21 KESRRRLHHXXBRW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000000990 laser dye Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- GNARHXWTMJZNTP-UHFFFAOYSA-N methoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[SiH2]CCCOCC1CO1 GNARHXWTMJZNTP-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical group C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、有機ＥＬ（エレ
クトロルミネッセンス）層を備えた電界発光素子に関す
る。[0001] 1. Field of the Invention [0002] The present invention relates to an electroluminescent device provided with an organic EL (electroluminescence) layer.
【０００２】[0002]
【従来の技術】有機ＥＬ層を備えた電界発光素子は、自
己発光を行うため視野角が広く、固体素子であるため耐
衝撃性に優れ、直流低電圧駆動素子を実現するものとし
て注目を集めている。しかしながら、このような有機Ｅ
Ｌ層を備えた電界発光素子では、無機薄膜素子（有機分
散型無機ＥＬ素子）、例えばＺｎＳ：Ｍｎ系の無機薄膜
素子に比較して、長期保存信頼性（寿命）に欠ける等の
実用化を阻む問題点を有していた。2. Description of the Related Art An electroluminescent device having an organic EL layer has attracted attention as a device which emits light by itself, has a wide viewing angle, is a solid device, has excellent impact resistance, and realizes a DC low voltage driving device. ing. However, such organic E
An electroluminescent device having an L layer has a practical use such as lack of long-term storage reliability (lifetime) as compared with an inorganic thin film device (organic dispersion type inorganic EL device), for example, a ZnS: Mn based inorganic thin film device. It had problems to prevent.
【０００３】ところが、近年では、２層型構造（正孔輸
送層と発光層）の開発と発光層にレーザ色素をドーピン
グすることにより発光効率が改善され、素子駆動時の半
減寿命も１万時間を越える報告がなされている。しかし
ながら、このような電界発光素子の半減寿命の測定は、
窒素雰囲気、不活性ガス雰囲気、真空下の常温の環境で
測定されたものがほとんどであり、実際の使用において
の信頼性に欠ける点が指摘されている。また、このよう
な電界発光素子における大きな問題点の１つとして、非
発光領域であるダークスポットの発生、成長がある。However, in recent years, the development of a two-layer structure (a hole transport layer and a light emitting layer) and doping of the light emitting layer with a laser dye have improved the light emitting efficiency and have a half-life of 10,000 hours when the element is driven. Have been reported. However, the measurement of the half life of such an electroluminescent device is
In most cases, measurements were made in a nitrogen atmosphere, an inert gas atmosphere, or a normal temperature environment under vacuum, and it has been pointed out that reliability in actual use is lacking. One of the major problems in such an electroluminescent device is the occurrence and growth of dark spots, which are non-light emitting regions.
【０００４】[0004]
【発明が解決しようとする課題】そこで、最近では、一
の面にアノード電極、有機ＥＬ層およびカソード電極が
この順で設けられた透明基板の一の面側を全面的に紫外
線硬化型のエポキシ系樹脂からなる樹脂封止膜で覆うこ
とにより、外部からの酸素、水の浸入を防ぎ、ダークス
ポットの発生、成長を抑制するようにしたものが考えら
れている。しかしながら、紫外線硬化型のエポキシ系樹
脂が硬化するとき、気泡を排除するために真空中で行う
と、エポキシ系樹脂が大きく収縮し、このため有機ＥＬ
層が押しつぶされて両電極がショートしてしまうことが
ある。また、透明基板の一の面側を全面的に覆っている
紫外線硬化型のエポキシ系樹脂が硬化すると、その副生
成物としてルイス酸やブレンスデット酸等が広い範囲に
亘って発生し、ダークスポットの成長を助長したり、電
極の腐食を引き起こしたりする原因となってしまう。こ
の発明は、ダークスポットの発生、成長を抑制すること
ができる上、両電極のショート等が発生しないようにす
ることである。Therefore, recently, one surface of a transparent substrate having an anode electrode, an organic EL layer, and a cathode electrode provided in this order on one surface is entirely coated with an ultraviolet curing epoxy. It has been proposed to cover the structure with a resin sealing film made of a system resin so as to prevent intrusion of oxygen and water from the outside and suppress generation and growth of dark spots. However, when the ultraviolet-curable epoxy resin is cured in a vacuum in order to eliminate air bubbles, the epoxy resin greatly shrinks, so that the organic EL is hardened.
The layers may be crushed and both electrodes may be short-circuited. Further, when the ultraviolet-curable epoxy resin covering the entire surface of one side of the transparent substrate is cured, Lewis acid, Brensdet acid and the like are generated as a by-product over a wide range, and dark spots are formed. This may promote growth or cause corrosion of the electrode. It is an object of the present invention to suppress generation and growth of dark spots and prevent short-circuiting of both electrodes.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載の発明
は、一の面に第１電極（アノード電極）、有機ＥＬ層お
よび第２電極（カソード電極）がこの順で設けられ、且
つ、前記第１電極、前記有機ＥＬ層および前記第２電極
を覆うように無機保護膜、シランカップリング層および
有機保護膜がこの順で設けられた基板の一の面側に対向
基板を配置し、その間に、前記有機保護膜を覆うように
樹脂封止膜を設けたものである。この発明によれば、第
１電極、有機ＥＬ層および第２電極を無機保護膜および
樹脂封止膜で覆っているので、外部からの酸素、水の浸
入を防ぐことができ、ひいてはダークスポットの発生、
成長を抑制することができる。また、無機保護膜の表面
をシランカップリング層を介して有機保護膜で覆ってい
るので、樹脂封止膜が硬化する際に副生成物を発生して
も、この副生成物が無機保護膜のピンポール欠陥を通し
て無機保護膜下に浸入しないようにすることができ、ひ
いてはダークスポットの発生、成長をより一層抑制する
ことができる。また、有機保護膜の膜厚をダークスポッ
トの発生核となり得る欠陥や異物をステップカバレージ
することができる膜厚とすれば、ダークスポットの発
生、成長をさらに抑制することができる。さらに、樹脂
封止膜が硬化したときの残留応力を有機保護膜で緩和す
ることができ、ひいては両電極がショートしないように
することができる。請求項２に記載の発明は、一の面に
第１電極、有機ＥＬ層および第２電極がこの順で設けら
れ、且つ、前記第１電極、前記有機ＥＬ層および前記第
２電極を覆うように無機保護膜および有機保護膜がこの
順で設けられた基板の一の面側に対向基板が配置され、
その間に、前記有機保護膜を覆うように樹脂封止膜を設
けたものである。この発明によれば、無機保護膜のみの
封止構造や有機保護膜のみの封止構造に比べて、対向基
板を基板に貼り合わせる時に有機ＥＬ層にかかる物理応
力や対向基板の重さによる物理応力の負荷を軽減するこ
とができるため、ダークスポットの発生、成長や電極間
ショートを抑制することができる。According to a first aspect of the present invention, a first electrode (anode electrode), an organic EL layer, and a second electrode (cathode electrode) are provided in this order on one surface; An opposing substrate is disposed on one surface side of a substrate provided with an inorganic protective film, a silane coupling layer, and an organic protective film in this order so as to cover the first electrode, the organic EL layer, and the second electrode; In the meantime, a resin sealing film is provided so as to cover the organic protective film. According to the present invention, since the first electrode, the organic EL layer, and the second electrode are covered with the inorganic protective film and the resin sealing film, the intrusion of oxygen and water from the outside can be prevented, and the dark spot can be prevented. Outbreak,
Growth can be suppressed. Further, since the surface of the inorganic protective film is covered with the organic protective film via the silane coupling layer, even if a by-product is generated when the resin sealing film is cured, the by-product is generated by the inorganic protective film. Can be prevented from penetrating beneath the inorganic protective film through the pinpole defect, and the generation and growth of dark spots can be further suppressed. In addition, if the thickness of the organic protective film is set to a value that enables step coverage of defects and foreign substances that may be nuclei of dark spots, generation and growth of dark spots can be further suppressed. Further, the residual stress when the resin sealing film is cured can be reduced by the organic protective film, so that both electrodes can be prevented from being short-circuited. According to a second aspect of the present invention, the first electrode, the organic EL layer, and the second electrode are provided on one surface in this order, and cover the first electrode, the organic EL layer, and the second electrode. A counter substrate is arranged on one surface side of the substrate on which the inorganic protective film and the organic protective film are provided in this order,
In the meantime, a resin sealing film is provided so as to cover the organic protective film. According to the present invention, as compared with a sealing structure including only an inorganic protective film or a sealing structure including only an organic protective film, when the opposing substrate is bonded to the substrate, the physical stress applied to the organic EL layer and the physical stress due to the weight of the opposing substrate. Since the load of stress can be reduced, generation and growth of dark spots and short-circuit between electrodes can be suppressed.
【０００６】[0006]
【発明の実施の形態】図１はこの発明の一実施形態にお
ける電界発光素子の断面図を示したものである。この電
界発光素子は透明基板１および対向基板１１を備えてい
る。透明基板１は、ポリエステル、ポリアクリレート、
ポリカーボネート、ポリスルホン、ポリエーテルケトン
等の樹脂やガラス等からなっている。FIG. 1 is a sectional view of an electroluminescent device according to an embodiment of the present invention. This electroluminescent device includes a transparent substrate 1 and a counter substrate 11. The transparent substrate 1 is made of polyester, polyacrylate,
It is made of resin such as polycarbonate, polysulfone, polyetherketone, glass, or the like.
【０００７】透明基板１の上面には複数のアノード電極
２が互いに平行して設けられている。アノード電極２
は、Ａｌ、Ａｕ、Ａｇ、Ｍｇ、Ｎｉ、Ｚｎ、Ｖ、Ｉｎ、
Ｓｎ等の単体、ＩＴＯのようなこれらの単体から選択さ
れた化合物、または金属フィラーを含む導電性接着剤等
からなっているが、その光透過率は８０％以上であるこ
とが望ましい。アノード電極２の形成は、スパッタリン
グ法、イオンプレーティング法、蒸着法等が好ましい
が、スピンコート法、グラビアコート法、ナイフコート
法等のコート法、スクリーン印刷法、フレキソ印刷法等
の印刷法等であってもよい。A plurality of anode electrodes 2 are provided on the upper surface of the transparent substrate 1 in parallel with each other. Anode electrode 2
Are Al, Au, Ag, Mg, Ni, Zn, V, In,
It is made of a simple substance such as Sn, a compound selected from these simple substances such as ITO, a conductive adhesive containing a metal filler, or the like, and its light transmittance is desirably 80% or more. The formation of the anode electrode 2 is preferably a sputtering method, an ion plating method, a vapor deposition method, or the like, but a coating method such as a spin coating method, a gravure coating method, a knife coating method, or a printing method such as a screen printing method or a flexographic printing method. It may be.
【０００８】アノード電極２を含む透明基板１の上面に
は有機ＥＬ層３が設けられている。有機ＥＬ層３は、詳
細には図示していないが、下から順に、正孔輸送層およ
び電子輸送層の２層構造となっているが、正孔輸送層、
発光層および電子輸送層の３層構造としてもよい。[0008] An organic EL layer 3 is provided on the upper surface of the transparent substrate 1 including the anode electrode 2. Although not shown in detail, the organic EL layer 3 has a two-layer structure of a hole transport layer and an electron transport layer in order from the bottom.
It may have a three-layer structure of a light emitting layer and an electron transport layer.
【０００９】正孔輸送層の材料は、カルバゾール重合
体、ＰＰＶ（フェニレンビニレン重合体）、ＰＰＶ誘導
体、ＰＰＶ共重合体、ＰＥＤＯＴ（ポリエチレンジオキ
シチオフェン）を含むポリマー分散体、３−アルキルチ
オフェン重合体等である。電子輸送層の材料は、電子輸
送性金属錯体化合物、好ましくは、Ａｌｑ３、Ｚｎｑ
２、Ｂｅｂｑ２、Ｚｎ−ＢＴＺ、ペリレン誘導体等であ
る。ただし、ｑは８−ヒドロキシキノリンであり、ｂｑ
は１０−ヒドロキシベンゾキノリンであり、ＢＴＺは２
-（ｏ-ヒドロキシフェニル）ベンゾチアゾールである。Materials for the hole transport layer include carbazole polymer, PPV (phenylene vinylene polymer), PPV derivative, PPV copolymer, polymer dispersion containing PEDOT (polyethylenedioxythiophene), and 3-alkylthiophene polymer. And so on. The material of the electron transporting layer is an electron transporting metal complex compound, preferably, Alq3, Znq
2, Bebq2, Zn-BTZ, perylene derivatives and the like. However, q is 8-hydroxyquinoline, bq
Is 10-hydroxybenzoquinoline and BTZ is 2
-(O-hydroxyphenyl) benzothiazole.
【００１０】そして、正孔輸送層は、その材料を溶媒に
溶かしてコーティング（湿式成膜）により形成し、その
膜厚は１００〜１００００Å好ましくは３００〜２００
０Åとする。電子輸送層は蒸着またはコーティングによ
り形成し、その膜厚は１００〜１００００Å好ましくは
３００〜２０００Åとする。なお、電子輸送層をコーテ
ィングにより形成する場合、溶媒として、常温で０．０
０１ｗｔ％以上溶解するもの、例えばトルエン、キシレ
ン等の芳香族炭化水素、ジクロロエタン等の塩素系溶媒
を用いる。The hole transport layer is formed by dissolving the material in a solvent and coating (wet film formation), and has a thickness of 100 to 10000Å, preferably 300 to 200２００.
0 °. The electron transport layer is formed by vapor deposition or coating, and has a thickness of 100 to 10000, preferably 300 to 2000. In the case where the electron transport layer is formed by coating, the solvent may be 0.0
A solvent which dissolves at least 01 wt%, for example, an aromatic hydrocarbon such as toluene or xylene, or a chlorinated solvent such as dichloroethane is used.
【００１１】有機ＥＬ層３の上面には複数のカソード電
極４がアノード電極２と交差するように設けられてい
る。カソード電極４は、有機ＥＬ層３の電子輸送層に電
子注入を効果的に行うことができる仕事関数値の低い金
属、好ましくは、Ｃａ、Ｍｇ、Ｓｎ、Ｉｎ、Ａｌ、Ａ
ｇ、Ｌｉ、希土類等の単体、またはこれらの単体から選
択された合金等からなっている。A plurality of cathode electrodes 4 are provided on the upper surface of the organic EL layer 3 so as to intersect with the anode electrode 2. The cathode electrode 4 is made of a metal having a low work function value capable of effectively injecting electrons into the electron transport layer of the organic EL layer 3, preferably Ca, Mg, Sn, In, Al, A
It is made of a simple substance such as g, Li, rare earth, or an alloy selected from these simple substances.
【００１２】カソード電極４を含む有機ＥＬ層３の表面
全体には無機保護膜５が設けられている。無機保護膜５
は、ＳｉＯ2中またはＺｎＳ中にＣｅＯ2を分散したもの
からなっている。無機保護膜５の形成は、スパッタリン
グ法、イオンプレーティング法、蒸着法等によって行
い、膜厚は１〜１０００００Å好ましくは５００〜１０
０００Åとする。この場合、無機保護膜５の形成は、カ
ソード電極４を形成した後、大気中に戻すことなく真空
中で連続して形成するか、或いは窒素ガスまたは不活性
ガス雰囲気中での搬送が可能な搬送系で透明基板１を搬
送して再度真空中において形成する。An inorganic protective film 5 is provided on the entire surface of the organic EL layer 3 including the cathode electrode 4. Inorganic protective film 5
Is composed of CeO 2 dispersed in SiO 2 or ZnS. The inorganic protective film 5 is formed by a sputtering method, an ion plating method, a vapor deposition method, or the like.
000Å. In this case, the inorganic protective film 5 can be formed continuously after forming the cathode electrode 4 in vacuum without returning to the atmosphere, or can be transported in a nitrogen gas or inert gas atmosphere. The transparent substrate 1 is transported by the transport system and is formed again in a vacuum.
【００１３】無機保護膜５の表面にはシランカップリン
グ層６および有機保護膜７が設けられている。シランカ
ップリング層６の材料は、γ−（２−アミノエチル）ア
ミノプロピルトリメトキシシラン、γ−（２−２−アミ
ノエチル）アミノプロピルメチルジメトキシシラン、ア
ミノシラン、γ−メタクリロキシプロピルトリメトキシ
シラン、Ｎ−β−（Ｎ−ビニルベンジルアミノエチル）
−γ−アミノプロピルトリメトキシシラン・塩酸塩、γ
−グリシドキシプロピルメトキシシラン、γ−メルカプ
トプロピルトリメトキシシラン、ビニルトリアセトキシ
シラン、γ−クロロプロピルメチルジメトキシシラン、
γ−メルカプトプロピルメチルジメトキシシラン、γ−
グリシドキシプロピルメチルジメトキシシラン、γ−ウ
レイドプロピルトリエトキシシラン、γ−メタクリロキ
シプロピルメチルジメトキシシラン等であり、好ましく
は、パラキシリレンダイマーと共重合可能な不飽和結合
を有するγ−メタクリロキシプロピルトリメトキシシラ
ン、γ−メタクリロキシプロピルメチルジメトキシシラ
ン、ビニルトリアセトキシシランである。有機保護膜７
の材料は、ポリパラキシレンである。On the surface of the inorganic protective film 5, a silane coupling layer 6 and an organic protective film 7 are provided. The material of the silane coupling layer 6 is γ- (2-aminoethyl) aminopropyltrimethoxysilane, γ- (2-2-aminoethyl) aminopropylmethyldimethoxysilane, aminosilane, γ-methacryloxypropyltrimethoxysilane, N-β- (N-vinylbenzylaminoethyl)
-Γ-aminopropyltrimethoxysilane hydrochloride, γ
-Glycidoxypropylmethoxysilane, γ-mercaptopropyltrimethoxysilane, vinyltriacetoxysilane, γ-chloropropylmethyldimethoxysilane,
γ-mercaptopropylmethyldimethoxysilane, γ-
Glycidoxypropylmethyldimethoxysilane, γ-ureidopropyltriethoxysilane, γ-methacryloxypropylmethyldimethoxysilane and the like, preferably γ-methacryloxypropyl having an unsaturated bond copolymerizable with paraxylylene dimer Trimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, and vinyltriacetoxysilane. Organic protective film 7
Is polyparaxylene.
【００１４】そして、ＣＶＤ装置のチャンバ内におい
て、無機保護膜５の表面にシランカップリング層６を蒸
着して形成し、これに連続してポリパラキシレンからな
る有機保護膜７を蒸着して形成する。この場合、シラン
カップリング層６の膜厚は０．００１〜１０μｍとす
る。有機保護膜７の膜厚は、後述する樹脂封止膜１２が
硬化したときの残留応力を緩和することができる程度の
膜厚、例えば０．０１〜１００μｍであり、好ましく
は、ダークスポットの発生核となり得る欠陥や異物を被
覆することができる程度の膜厚０．１〜５μｍである。
また、有機保護膜７は、膜厚が１μｍ以上のとき、酸素
・水蒸気透過率が１ｃｃ（ｇ）／ｍ2・２４ｈr・１ａｔ
ｍ（at２５℃）以下であることが望ましい。In a chamber of the CVD apparatus, a silane coupling layer 6 is formed by vapor deposition on the surface of the inorganic protective film 5, and an organic protective film 7 made of polyparaxylene is continuously formed by vapor deposition. I do. In this case, the thickness of the silane coupling layer 6 is 0.001 to 10 μm. The thickness of the organic protective film 7 is such that the residual stress when the resin sealing film 12 to be described later is cured can be reduced, for example, 0.01 to 100 μm, and it is preferable that dark spots be generated. The film thickness is 0.1 to 5 μm, which is sufficient to cover defects and foreign substances that can be nuclei.
When the thickness of the organic protective film 7 is 1 μm or more, the oxygen / water vapor transmission rate is 1 cc (g) / m 2 · 24 hr · 1 at.
m (at 25 ° C.) or less.
【００１５】一方、対向基板１１は、ガラス、樹脂、セ
ラミック、金属、金属化合物、またはこれらの複合体等
からなっている。対向基板１１の厚さは１０μｍ〜３ｍ
ｍであることが望ましく、その酸素・水蒸気透過率は
０．２ｃｃ（ｇ）／ｍ2・２４ｈr・１ａｔｍ（at４０
℃、湿度９５％）以下であることが望ましい。そして、
対向基板１１は、その下面に予め設けられた樹脂封止膜
１２が有機保護膜７の表面および透明基板１の上面に貼
り合わされ、樹脂封止膜１２が硬化することにより、透
明基板１等と一体化されている。樹脂封止膜１２は、熱
硬化型エポキシ系樹脂、紫外線硬化型エポキシ系樹脂、
または反応開始剤をマイクロカプセル化して加圧するこ
とにより反応が開始する常温硬化型エポキシ系樹脂等か
らなっている。この樹脂封止膜１２の膜厚は、対向基板
１１の下面にただ単に塗布された状態で１〜１００μｍ
であることが望ましい。On the other hand, the counter substrate 11 is made of glass, resin, ceramic, metal, metal compound, or a composite thereof. The thickness of the counter substrate 11 is 10 μm to 3 m
m, and its oxygen / water vapor transmission rate is 0.2 cc (g) / m 2 · 24 hr · 1 atm (at 40
C. and a humidity of 95%). And
The opposing substrate 11 has a resin sealing film 12 provided in advance on the lower surface thereof bonded to the surface of the organic protective film 7 and the upper surface of the transparent substrate 1, and the resin sealing film 12 is cured to form It is integrated. The resin sealing film 12 is made of a thermosetting epoxy resin, an ultraviolet curing epoxy resin,
Alternatively, it is made of a cold-setting epoxy resin or the like in which a reaction is started by microencapsulation of a reaction initiator and pressurization. The thickness of the resin sealing film 12 is 1 to 100 μm when the resin sealing film 12 is simply applied to the lower surface of the counter substrate 11.
It is desirable that
【００１６】以上のように構成された電界発光素子で
は、アノード電極２、有機ＥＬ層３およびカソード電極
４を無機保護膜５および樹脂封止膜１２で覆っているの
で、外部からの酸素、水の浸入を防ぐことができ、ひい
てはダークスポットの発生、成長を抑制することができ
る。また、無機保護膜５の表面をシランカップリング層
６を介して有機保護膜７で覆っているので、樹脂封止膜
１２が硬化する際に副生成物を発生しても、この副生成
物が無機保護膜５のピンポール欠陥を通して無機保護膜
５下に浸入しないようにすることができ、ひいてはダー
クスポットの発生、成長をより一層抑制することができ
る。また、有機保護膜７の膜厚をダークスポットの発生
核となり得る欠陥や異物をステップカバレージすること
ができる膜厚とすれば、ダークスポットの発生、成長を
さらに抑制することができる。さらに、樹脂封止膜１２
が硬化したときの残留応力を有機保護７膜で緩和するこ
とができ、ひいては両電極２、４がショートしないよう
にすることができる。なお、有機保護膜７の表面に放熱
兼反射用の金属層を設けるようにしてもよい。In the electroluminescent device configured as described above, since the anode electrode 2, the organic EL layer 3, and the cathode electrode 4 are covered with the inorganic protective film 5 and the resin sealing film 12, oxygen, water, Can be prevented, and the occurrence and growth of dark spots can be suppressed. Further, since the surface of the inorganic protective film 5 is covered with the organic protective film 7 via the silane coupling layer 6, even if a by-product is generated when the resin sealing film 12 is cured, this by-product Can be prevented from penetrating under the inorganic protective film 5 through the pin pole defect of the inorganic protective film 5, and the generation and growth of dark spots can be further suppressed. In addition, if the thickness of the organic protective film 7 is set to a value that enables step coverage of defects and foreign substances that may be nuclei of dark spots, generation and growth of dark spots can be further suppressed. Further, the resin sealing film 12
The residual stress when is cured can be reduced by the organic protective film 7, so that the electrodes 2 and 4 can be prevented from being short-circuited. Note that a metal layer for heat dissipation and reflection may be provided on the surface of the organic protective film 7.
【００１７】次に、具体例について説明する。まず、透
明基板１の上面にＩＴＯからなるアノード電極２を１０
Ω／□となるように形成し、その上面にα−ＮＰＤから
なる正孔輸送層を膜厚５００Åとなるように形成し、そ
の上面にＢｅｂｑ２からなる電子輸送層を膜厚５００Å
となるように形成し、その上面にＭｇ−Ｉｎからなるカ
ソード電極４を膜厚４０００Åとなるように形成し、こ
れにより得られたものを、以下、説明の都合上、基本構
造という。Next, a specific example will be described. First, an anode electrode 2 made of ITO was placed on the upper surface of the transparent substrate 1 for 10 minutes.
Ω / □, a hole transport layer made of α-NPD is formed on its upper surface to a thickness of 500 °, and an electron transport layer made of Bebq2 is formed on its upper surface to a thickness of 500 °.
The cathode electrode 4 made of Mg-In is formed on the upper surface so as to have a thickness of 4000 °, and the resulting structure is hereinafter referred to as a basic structure for convenience of explanation.
【００１８】そして、基本構造の上面にＳｉＯ2中にＣ
ｅＯ2を分散したものからなる無機保護膜５を膜厚４０
００Åとなるように形成し、その上に、対向基板（旭硝
子社製のソーダライム、厚さ０．７ｍｍ、以下同じ。）
１１の下面に塗布された紫外線硬化型エポキシ系樹脂
（スリーボンド社製の３１０２、以下同じ。）を貼り付
けて硬化し、これにより得られたものを保護構造１とい
う。また、基本構造の上面にポリパラキシレンからなる
有機保護膜７を膜厚５μｍとなるように形成し、その上
に、対向基板１１の下面に塗布された紫外線硬化型エポ
キシ系樹脂を貼り付けて硬化し、これにより得られたも
のを保護構造２という。[0018] and, C in the SiO 2 on the top surface of the basic structure
The inorganic protective film 5 made of eO 2 is dispersed to a thickness of 40
And a counter substrate (soda lime manufactured by Asahi Glass Co., Ltd., thickness 0.7 mm, hereinafter the same).
An ultraviolet-curable epoxy resin (3102 manufactured by Three Bond, hereinafter the same) applied to the lower surface of 11 is applied and cured, and the resulting product is referred to as protective structure 1. Further, an organic protective film 7 made of polyparaxylene is formed on the upper surface of the basic structure so as to have a thickness of 5 μm, and an ultraviolet curable epoxy resin applied on the lower surface of the counter substrate 11 is attached thereon. The cured product is referred to as a protective structure 2.
【００１９】また、基本構造の上面にＳｉＯ2中にＣｅ
Ｏ2を分散したものからなる無機保護膜５を膜厚４００
０Åとなるように形成し、その上面にポリパラキシレン
からなる有機保護膜７を膜厚５μｍとなるように形成
し、その上に、対向基板１１の下面に塗布された紫外線
硬化型エポキシ系樹脂を貼り付けて硬化し、これにより
得られたものを保護構造３という。最後に、基本構造の
上面にＳｉＯ2中にＣｅＯ2を分散したものからなる無機
保護膜５を膜厚４０００Åとなるように形成し、その上
面にγ−メタクリロキシプロピルトリメトキシシランか
らなるシランカップリング層６を膜厚０．１μｍとなる
ように形成し、その上面にポリパラキシレンからなる有
機保護膜７を膜厚５μｍとなるように形成し、その上
に、対向基板１１の下面に塗布された紫外線硬化型エポ
キシ系樹脂を貼り付けて硬化し、これにより得られたも
のを保護構造４という。なお、いずれの保護構造におい
ても、発光箇所の面積は２×２ｍｍとした。また、各保
護構造の発光箇所数は３０個とした。Also, Ce on SiO 2 is formed on the upper surface of the basic structure.
An inorganic protective film 5 made of a material in which O 2 is dispersed has a thickness of 400
0 °, an organic protective film 7 made of polyparaxylene is formed on the upper surface so as to have a thickness of 5 μm, and an ultraviolet-curable epoxy resin applied on the lower surface of the counter substrate 11 is further formed thereon. Is attached and cured, and the resultant is referred to as protective structure 3. Finally, an inorganic protective film 5 made of a dispersion of CeO 2 in SiO 2 is formed on the upper surface of the basic structure so as to have a thickness of 4000 °, and a silane cup made of γ-methacryloxypropyltrimethoxysilane is formed on the upper surface. The ring layer 6 is formed so as to have a thickness of 0.1 μm, and the organic protective film 7 made of polyparaxylene is formed so as to have a thickness of 5 μm on the upper surface, and is coated on the lower surface of the counter substrate 11 thereon. The obtained ultraviolet-curable epoxy resin is attached and cured, and the resulting product is referred to as a protective structure 4. In each of the protective structures, the area of the light emitting portion was 2 × 2 mm. In addition, the number of light emitting locations of each protective structure was set to 30.
【００２０】そして、高温高湿試験として６０℃で湿度
９０％の高温高湿槽内に放置し、発光面積の比率の経時
変化の平均値を調べたところ、図２に示す結果が得られ
た。アノード電極２とカソード電極との重なり面積（理
論上の初期発光面積）を１．００としている。この図２
から明らかなように、保護構造２、４が放置時間４５６
時間で０．９９と一番良いことが分かるが、他の保護構
造１、３とあまり差は無い。なお、比較例として無機保
護膜５、シランカップリング層６および有機保護膜７を
一切設けずに上記基本構造を対向基板１１のみで封止し
た構造では、４５６時間で０．８７となっており、これ
らの部材がダークスポットの発生、成長に抑止力がある
ことが観察された。As a high-temperature and high-humidity test, the sample was left in a high-temperature and high-humidity chamber at 60 ° C. and a humidity of 90%, and the average value of the change over time in the ratio of the light-emitting area was obtained. The result shown in FIG. 2 was obtained. . The overlapping area (theoretical initial light emitting area) between the anode electrode 2 and the cathode electrode is set to 1.00. This figure 2
As can be seen from FIG.
It can be seen that the time is 0.99, which is the best, but there is not much difference from the other protective structures 1, 3. As a comparative example, a structure in which the above-described basic structure is sealed only with the counter substrate 11 without providing any inorganic protective film 5, silane coupling layer 6, and organic protective film 7 is 0.87 in 456 hours. It was observed that these members have a deterrent effect on dark spot generation and growth.
【００２１】また、高温試験として温度８０℃の高温槽
内に放置し、アノード−カソード電極間ショートに対す
る生存率の経時変化の平均値を調べたところ、図３に示
す結果が得られた。この図３から明らかなように、保護
構造１の場合放置時間４５６時間で４０．０と一番悪
く、保護構造２の場合も放置時間４５６時間で８３．３
とかなり悪く、これに対し、保護構造３、４の場合には
放置時間４５６時間で１００．０と少しも減少せずかな
り良いことが分かる。以上のことから、保護構造３、４
の場合には、対向基板１１を透明基板１の基本構造に貼
り合わせる時に有機ＥＬ層３にかかる物理応力や対向基
板１１の重さによる物理応力の負荷を軽減することがで
きるため、ダークスポットの発生、成長が抑制され、電
極間ショートが生じにくいということが分かる。Further, as a high temperature test, the sample was left in a high temperature bath at a temperature of 80 ° C., and the average value of the change over time of the survival rate with respect to the short circuit between the anode and the cathode was obtained. The result shown in FIG. 3 was obtained. As is clear from FIG. 3, the worst case of 40.0 is obtained when the protection structure 1 is left for 456 hours, and the worst case is 83.3 when the protection structure 2 is left for 456 hours.
On the other hand, in the case of the protection structures 3 and 4, it can be seen that the storage time is 456 hours, and does not decrease to 100.0 at all, which is quite good. From the above, the protection structures 3, 4
In the case of (1), the physical stress applied to the organic EL layer 3 when the opposing substrate 11 is bonded to the basic structure of the transparent substrate 1 and the load of the physical stress due to the weight of the opposing substrate 11 can be reduced. It can be seen that generation and growth are suppressed and a short circuit between the electrodes is unlikely to occur.
【００２２】ところで、保護構造３、４（各発光箇所数
は５個）について、ＪＩＳ５４００に準拠した碁盤目テ
ープ法（密着強度）試験法を行ったところ、保護構造３
の場合のＪＩＳ評価点の平均値が１．２点とかなり低か
ったのに対し、保護構造４の場合のＪＩＳ評価点の平均
値は８．８点とかなり高かった。これは、保護構造３の
場合には、シランカップリング層６を有していないの
で、有機保護膜７と無機保護膜５との密着性があまり良
くなく、これに対し、保護構造４の場合には、シランカ
ップリング層６を有しているので、有機保護膜７と無機
保護膜５との実質的な密着性が良くなることに起因する
ものと思われる。したがって、この密着強度の点を考慮
すると、保護構造３よりも保護構造４の方が好ましい。By the way, a cross-cut tape test (adhesion strength) test method according to JIS 5400 was performed on the protective structures 3 and 4 (the number of light emitting portions is 5).
In the case of (1), the average value of the JIS evaluation points was considerably low at 1.2 points, whereas the average value of the JIS evaluation points in the case of the protective structure 4 was considerably high at 8.8 points. This is because the protective structure 3 does not have the silane coupling layer 6, so that the adhesion between the organic protective film 7 and the inorganic protective film 5 is not very good. It is thought that this is due to the fact that the organic protective film 7 and the inorganic protective film 5 have substantially improved adhesion due to the presence of the silane coupling layer 6. Therefore, in consideration of the adhesion strength, the protection structure 4 is more preferable than the protection structure 3.
【００２３】[0023]
【発明の効果】以上説明したように、請求項１に記載の
発明によれば、第１電極、有機ＥＬ層および第２電極を
無機保護膜および樹脂封止膜で覆っているので、外部か
らの酸素、水の浸入を防ぐことができ、ひいてはダーク
スポットの発生、成長を抑制することができる。また、
無機保護膜の表面をシランカップリング層を介して有機
保護膜で覆っているので、樹脂封止膜が硬化する際に副
生成物を発生しても、この副生成物が無機保護膜のピン
ポール欠陥を通して無機保護膜下に浸入しないようにす
ることができ、ひいてはダークスポットの発生、成長を
より一層抑制することができる。また、有機保護膜の膜
厚をダークスポットの発生核となり得る欠陥や異物をス
テップカバレージすることができる膜厚とすれば、ダー
クスポットの発生、成長をさらに抑制することができ
る。さらに、樹脂封止膜が硬化したときの残留応力を有
機保護膜で緩和することができ、ひいては両電極がショ
ートしないようにすることができる。そして、請求項２
に記載の発明によれば、無機保護膜のみの封止構造や有
機保護膜のみの封止構造に比べて、対向基板を基板に貼
り合わせる時に有機ＥＬ層にかかる物理応力や対向基板
の重さによる物理応力の負荷を軽減することができるた
め、ダークスポットの発生、成長や電極間ショートを抑
制することができる。As described above, according to the first aspect of the present invention, the first electrode, the organic EL layer, and the second electrode are covered with the inorganic protective film and the resin sealing film. Oxygen and water can be prevented, and the generation and growth of dark spots can be suppressed. Also,
Since the surface of the inorganic protective film is covered with the organic protective film via the silane coupling layer, even if a by-product is generated when the resin sealing film is cured, the by-product is generated by the pinhole of the inorganic protective film. It can be prevented from penetrating under the inorganic protective film through the defect, and the generation and growth of dark spots can be further suppressed. In addition, if the thickness of the organic protective film is set to a value that enables step coverage of defects and foreign substances that may be nuclei of dark spots, generation and growth of dark spots can be further suppressed. Further, the residual stress when the resin sealing film is cured can be reduced by the organic protective film, so that both electrodes can be prevented from being short-circuited. And claim 2
According to the invention described in the above, the physical stress applied to the organic EL layer and the weight of the opposing substrate when the opposing substrate is bonded to the substrate, compared to the encapsulating structure including only the inorganic protective film or the encapsulating structure including only the organic protective film. Can reduce the load of physical stress due to the occurrence of dark spots, thereby suppressing the occurrence and growth of dark spots and short-circuiting between electrodes.
【図１】この発明の一実施形態における電界発光素子の
断面図。FIG. 1 is a sectional view of an electroluminescent device according to an embodiment of the present invention.
【図２】発光面積の比率の経時変化を説明するために示
す図。FIG. 2 is a diagram for explaining a change over time in a ratio of light emitting areas.
【図３】電極間ショートに対する生存率の経時変化を説
明するために示す図。FIG. 3 is a diagram for explaining a change over time in a survival rate with respect to a short circuit between electrodes.
１ 透明基板 ２ アノード電極 ３ 有機ＥＬ層 ４ カソード電極 ５ 無機保護膜 ６ シランカップリング層 ７ 有機保護膜 １１ 対向基板 １２ 樹脂封止膜 DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Anode electrode 3 Organic EL layer 4 Cathode electrode 5 Inorganic protective film 6 Silane coupling layer 7 Organic protective film 11 Opposite substrate 12 Resin sealing film
Claims (6)
２電極がこの順で設けられ、且つ、前記第１電極、前記
有機ＥＬ層および前記第２電極を覆うように無機保護
膜、シランカップリング層および有機保護膜がこの順で
設けられた基板の一の面側に対向基板が配置され、その
間に、前記有機保護膜を覆うように樹脂封止膜が設けら
れていることを特徴とする電界発光素子。A first electrode, an organic EL layer, and a second electrode are provided in this order on one surface, and an inorganic protective film is formed so as to cover the first electrode, the organic EL layer, and the second electrode. An opposing substrate is disposed on one surface side of the substrate on which the silane coupling layer and the organic protective film are provided in this order, and a resin sealing film is provided therebetween to cover the organic protective film. An electroluminescent device characterized by the above-mentioned.
２電極がこの順で設けられ、且つ、前記第１電極、前記
有機ＥＬ層および前記第２電極を覆うように無機保護膜
および有機保護膜がこの順で設けられた基板の一の面側
に対向基板が配置され、その間に、前記有機保護膜を覆
うように樹脂封止膜が設けられていることを特徴とする
電界発光素子。2. A first electrode, an organic EL layer, and a second electrode are provided in this order on one surface, and an inorganic protective film is formed so as to cover the first electrode, the organic EL layer, and the second electrode. And an opposing substrate is disposed on one surface side of the substrate on which the organic protective film is provided in this order, and a resin sealing film is provided therebetween to cover the organic protective film. Light emitting element.
て、前記無機保護膜はＳｉＯ2中またはＺｎＳ中にＣｅ
Ｏ2を分散したものからなることを特徴とする電界発光
素子。3. The invention according to claim 1, wherein the inorganic protective film is made of Ce in SiO 2 or ZnS.
Electroluminescent device characterized by comprising the O 2 from those dispersed.
て、前記有機保護膜はポリパラキシレンからなることを
特徴とする電界発光素子。4. The electroluminescent device according to claim 1, wherein the organic protective film is made of polyparaxylene.
て、前記有機保護膜の膜厚は０．１μｍ以上であること
を特徴とする電界発光素子。5. The electroluminescent device according to claim 1, wherein the thickness of the organic protective film is 0.1 μm or more.
て、前記樹脂封止膜はエポキシ系樹脂からなることを特
徴とする電界発光素子。6. The electroluminescent device according to claim 1, wherein the resin sealing film is made of an epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000159372A JP4324718B2 (en) | 2000-05-30 | 2000-05-30 | Electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000159372A JP4324718B2 (en) | 2000-05-30 | 2000-05-30 | Electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001338754A true JP2001338754A (en) | 2001-12-07 |
| JP4324718B2 JP4324718B2 (en) | 2009-09-02 |
Family
ID=18663707
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000159372A Expired - Lifetime JP4324718B2 (en) | 2000-05-30 | 2000-05-30 | Electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4324718B2 (en) |
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| CN110943182A (en) * | 2019-11-22 | 2020-03-31 | 武汉华星光电半导体显示技术有限公司 | Organic electroluminescent device |
| US11404671B2 (en) | 2019-11-22 | 2022-08-02 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic electroluminescence device |
| CN113764598A (en) * | 2020-06-03 | 2021-12-07 | 咸阳彩虹光电科技有限公司 | Thin film packaging structure, OLED display panel and display |
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