JP2001313267A - Heat treating boat - Google Patents
Heat treating boatInfo
- Publication number
- JP2001313267A JP2001313267A JP2000131223A JP2000131223A JP2001313267A JP 2001313267 A JP2001313267 A JP 2001313267A JP 2000131223 A JP2000131223 A JP 2000131223A JP 2000131223 A JP2000131223 A JP 2000131223A JP 2001313267 A JP2001313267 A JP 2001313267A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heat treatment
- processed
- mounting means
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は熱処理用ボートに関
わり、特に大径のウェハの熱処理時にウェハに損失を与
えることの少ない熱処理用ボートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a boat for heat treatment, and more particularly to a boat for heat treatment which causes less loss of wafers during heat treatment of large-diameter wafers.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおいては、シリコ
ンウェハ（以下、ウェハという）に対して拡散、酸化、
ＣＶＤ等の熱処理が行われる。近年、ウェハは８インチ
径から１２インチ径へと大径化する傾向にある。2. Description of the Related Art In a semiconductor manufacturing process, a silicon wafer (hereinafter, referred to as a wafer) is diffused, oxidized,
Heat treatment such as CVD is performed. In recent years, wafers tend to increase in diameter from 8 inches to 12 inches.
【０００３】これに伴って熱処理用ボートは、１０００
℃以上の温度で熱処理を行ったときに、支持部にウェハ
の荷重が集中したり、自重によってウェハが反ったりし
て、スリップと呼ばれる表面欠陥が従来以上に生じ易い
といった問題が生じている。Along with this, a boat for heat treatment has a capacity of 1000
When heat treatment is performed at a temperature of not less than ° C., the load of the wafer is concentrated on the supporting portion, or the wafer is warped by its own weight, causing a problem that a surface defect called a slip is more likely to occur than before.
【０００４】この問題に対し、ウェハを支えるウェハ支
持部自体をウェハより一回り大きな円板とし、ウェハを
ウェハ支持部の全体で支持しようとする考え方がある。[0004] To solve this problem, there is an idea that a wafer supporting portion for supporting the wafer is formed as a disk slightly larger than the wafer, and the wafer is supported by the entire wafer supporting portion.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、ウェハ
をウェハ支持部の全体で支持しようとすると、ウェハの
上面と下面とで温度むらを生じ易くなる。更に、加工面
積が広いので加工費が高くなり、重量も大きくなるなど
の問題がある。However, if the wafer is to be supported by the entire wafer supporting portion, temperature unevenness is likely to occur between the upper surface and the lower surface of the wafer. Further, since the processing area is large, there is a problem that the processing cost is high and the weight is large.
【０００６】本発明はこのような従来の課題に鑑みてな
されたもので、大径のウェハの熱処理時にウェハに損失
を与えることの少ない熱処理用ボートを提供することを
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of such conventional problems, and has as its object to provide a boat for heat treatment that causes less loss of wafers during heat treatment of large-diameter wafers.
【０００７】[0007]
【課題を解決するための手段】このため本発明（請求項
１）は、天板と底板間に固定された複数の支柱と、該支
柱の内側所定部に該支柱に対し直角に、かつ等間隔に配
設された複数の溝と、該溝同士の間に形成された突設部
と、該突設部に嵌合される嵌合穴が底部所定箇所に配設
され、全周又は一部周囲が環状に形成された被処理体載
置手段とを備えて構成した。According to the present invention (claim 1), a plurality of pillars fixed between a top plate and a bottom plate are provided at predetermined portions inside the pillars at right angles to the pillars. A plurality of grooves arranged at intervals, a protruding portion formed between the grooves, and a fitting hole fitted to the protruding portion are provided at a predetermined bottom portion, and the The processing object mounting means is formed in such a manner that the periphery thereof is formed in an annular shape.
【０００８】複数の支柱が、天板と底板間に固定されて
いる。この支柱の内側所定部に、この支柱に対し直角
に、かつ等間隔に複数の溝を配設する。突設部が、この
溝同士の間に形成されている。被処理体載置手段は、こ
の突設部に嵌合される嵌合穴が底部所定箇所に配設さ
れ、全周又は一部周囲が環状に形成されている。そし
て、被処理体が被処理体載置手段の上に載置される。A plurality of columns are fixed between the top plate and the bottom plate. A plurality of grooves are arranged in a predetermined portion inside the support at right angles to the support and at equal intervals. Protrusions are formed between the grooves. The processing object mounting means has a fitting hole to be fitted to the protruding portion at a predetermined bottom portion, and has an entire circumference or a partial circumference formed in an annular shape. Then, the object is placed on the object placing means.
【０００９】以上により、被処理体は、全周又は一部周
囲が環状に形成された被処理体載置手段の上に載置され
るので安定する。また、環状に形成された被処理体載置
手段の内側には空間が形成されるため、熱分布が生ずる
おそれは小さい。更に、中心付近は被処理体と接触しな
いので、被処理体が反ってもがたつかない。As described above, the object to be processed is placed on the object-to-be-processed mounting means having the entire periphery or a part thereof formed in an annular shape, so that the object is stabilized. Further, since a space is formed inside the processing object mounting means formed in an annular shape, there is little possibility that heat distribution will occur. Furthermore, since the vicinity of the center does not come into contact with the object to be processed, the object to be processed does not rattle even if warped.
【００１０】また、本発明（請求項２）は、前記被処理
体の周縁所定部を載置する被処理体搬送治具を備えて構
成した。Further, according to the present invention (claim 2), a workpiece conveying jig for mounting a predetermined peripheral portion of the workpiece is provided.
【００１１】被処理体搬送治具は、隣接する被処理体の
間に順次段を変えて抜き差しされ、被処理体の周縁所定
部を載置可能である。[0011] The workpiece conveying jig is sequentially inserted and removed between adjacent workpieces while changing the level, and a predetermined peripheral portion of the workpiece can be placed thereon.
【００１２】更に、本発明（請求項３）は、前記被処理
体載置手段は、前記被処理体の抜き差し方向所定部が開
口された挿入口を有し、前記被処理体搬送治具は、該挿
入口より抜き差しされることを特徴とする。Further, according to the present invention (claim 3), the object-to-be-processed mounting means has an insertion opening in which a predetermined portion in the insertion / removal direction of the object to be processed is opened. , Which can be inserted and removed from the insertion opening.
【００１３】このことにより、被処理体搬送治具が進入
及び退出される際に被処理体搬送治具と被処理体載置手
段間の干渉がない。Accordingly, there is no interference between the object carrying jig and the object placing means when the object carrying jig enters and leaves.
【００１４】更に、本発明（請求項４）は、前記被処理
体載置手段は、前記被処理体搬送治具の先端が当たらな
いように外方に屈曲されたことを特徴とする。Further, the present invention (claim 4) is characterized in that the processing object mounting means is bent outward so that the front end of the processing object transport jig does not hit.
【００１５】このことにより、被処理体搬送治具が進入
及び退出される際に被処理体搬送治具と被処理体載置手
段間の干渉がない。Thus, there is no interference between the object carrying jig and the object placing means when the object carrying jig enters and leaves.
【００１６】更に、本発明（請求項５）は、前記被処理
体載置手段の外周は、前記天板及び／又は前記底板の外
周を超えないことを特徴とする。Further, the present invention (claim 5) is characterized in that the outer periphery of the processing object mounting means does not exceed the outer periphery of the top plate and / or the bottom plate.
【００１７】このことにより、天板及び／又は底板より
突設する部分が無いので、炉の構造による制約を受けに
くい。As a result, there is no portion protruding from the top plate and / or the bottom plate, so that it is less likely to be restricted by the structure of the furnace.
【００１８】更に、本発明（請求項６）は、前記被処理
体接触面の面粗さはＪＩＳ Ｂ０６０１で定める算術平
均粗さＲa １μｍ以下であることを特徴とする。Furthermore, the present invention (claim 6) is characterized in that the surface roughness of the contact surface of the object to be processed is an arithmetic average roughness Ra of 1 μm or less defined by JIS B0601.
【００１９】このことにより、被処理体は一層スリップ
を生じ難い。As a result, the object is less likely to slip.
【００２０】更に、本発明（請求項７）は、前記環状に
形成された前記被処理体載置手段の前記被処理体との当
接部分の合計された周長は、前記被処理体の全外周長の
５０パーセント以上であることを特徴とする。Further, according to the present invention (claim 7), the total peripheral length of the abutting portion of the annularly-shaped object mounting means with the object to be processed is equal to the total length of the object to be processed. It is characterized in that it is 50% or more of the entire outer peripheral length.
【００２１】このことにより、被処理体の外周は十分支
持され、一層スリップを生じ難い。As a result, the outer periphery of the object to be processed is sufficiently supported, and slip is less likely to occur.
【００２２】[0022]
【発明の実施の形態】以下、本発明の実施形態について
説明する。本発明の第１実施形態である熱処理用ボート
１０の横断面図を図１に、図１中のＡ−Ａ矢視断面図を
図２に、ウェハ支持部７の斜視図を図３に示す。Embodiments of the present invention will be described below. FIG. 1 is a cross-sectional view of the heat treatment boat 10 according to the first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 3 is a perspective view of the wafer support 7. .
【００２３】図１に示すように、柱状の支柱５ａ、５
ｂ、５ｃ、５ｄには、その支柱の内側所定部に、この支
柱に対し直角に、複数の溝が配設されている。その結
果、隣接する溝同士の間に突設部５ｅ、５ｆ、５ｇ、５
ｈが形成されている。ウェハ支持部７の底部には、嵌合
穴６ａ、６ｂ、６ｃ、６ｄが設けられ、突設部５ｅ、５
ｆ、５ｇ、５ｈに対し嵌合可能なようになっている。As shown in FIG. 1, the columnar supports 5a, 5a
In b, 5c, and 5d, a plurality of grooves are provided in a predetermined portion inside the column at right angles to the column. As a result, the projecting portions 5e, 5f, 5g, 5
h is formed. Fitting holes 6a, 6b, 6c, 6d are provided at the bottom of the wafer support portion 7, and the projecting portions 5e, 5e,
f, 5g, and 5h.
【００２４】ウェハ支持部７は環状に構成されており、
ウェハ支持部７の図１で示す下方には挿入口１１が形成
されている。The wafer support 7 is formed in an annular shape.
An insertion slot 11 is formed below the wafer support 7 as shown in FIG.
【００２５】挿入口１１には、ウェハ搬送治具１３が図
１の下方より進入及び退出可能なようになっている。ウ
ェハ搬送治具１３は、その先端部が左右対称となるよう
にＵ字状に分岐されいる。A wafer transfer jig 13 can enter and exit the insertion port 11 from below in FIG. The wafer transfer jig 13 is branched in a U-shape such that the tip end portion is symmetrical.
【００２６】図１には、このウェハ搬送治具１３が、進
入完了した状態を示している。ウェハ搬送治具１３には
突設部１５ａ、１５ｂ、１５ｃ、１５ｄが設けられてお
り、この突設部１５ａ、１５ｂ、１５ｃ、１５ｄはウェ
ハ９縁部と当接するようになっている。FIG. 1 shows a state in which the wafer transfer jig 13 has been completely entered. The wafer transfer jig 13 is provided with projecting portions 15a, 15b, 15c, 15d, and the projecting portions 15a, 15b, 15c, 15d come into contact with the edge of the wafer 9.
【００２７】ウェハ搬送治具１３の先端部分を回避しつ
つ、かつウェハ９の外周を出来るだけ広範囲に載置する
ため、ウェハ支持部７の図１で示す上方はＭ字状に屈曲
されている。Ｍ字状の頂部７ａ、７ｂはウェハ９の外周
囲を超えている。In order to place the outer periphery of the wafer 9 as widely as possible while avoiding the front end portion of the wafer transfer jig 13, the upper portion of the wafer support 7 shown in FIG. . The M-shaped tops 7 a and 7 b extend beyond the outer periphery of the wafer 9.
【００２８】Ｍ字状の底部７ｅ及びウェハ支持部７のＭ
字状に構成された部分以外であるウェハ支持部７ｃ、７
ｄは、ウェハ９の外縁の所定範囲部分が載置可能なよう
にウェハ９の外周に沿うように形成されている。The M-shaped bottom 7e and the M of the wafer support 7
Wafer support portions 7c, 7 other than the portions configured in the shape of a letter.
d is formed along the outer periphery of the wafer 9 so that a predetermined range portion of the outer edge of the wafer 9 can be placed.
【００２９】かかる構成により、熱処理前には、ウェハ
９を載置したウェハ搬送治具１３が挿入口１１より進入
した後、ウェハ搬送治具１３が降下されることでウェハ
支持部７上にウェハ９を残し、その後ウェハ搬送治具１
３を退出させることが可能である。With this configuration, before the heat treatment, the wafer transfer jig 13 on which the wafer 9 is placed enters through the insertion slot 11 and then the wafer transfer jig 13 is lowered, so that the wafer is placed on the wafer support 7. 9 and then the wafer transfer jig 1
3 can be ejected.
【００３０】一方、熱処理後には、挿入口１１よりウェ
ハ搬送治具１３を進入させた後、ウェハ搬送治具１３の
突設部１５ａ、１５ｂ、１５ｃ、１５ｄによりウェハ９
を載置し、その後ウェハ搬送治具１３を挿入口１１より
退出させることが出来る。On the other hand, after the heat treatment, the wafer transfer jig 13 is made to enter from the insertion port 11 and then the wafer 9 is projected by the projecting portions 15a, 15b, 15c, 15d of the wafer transfer jig 13.
And then the wafer transfer jig 13 can be withdrawn from the insertion slot 11.
【００３１】また、ウェハ支持部７の内のウェハ９縁部
と当接する当接部の合計された周長は、ウェハ９の全外
周長の５０パーセント以上であるのが望ましい。It is desirable that the total peripheral length of the contact portion of the wafer support portion 7 that contacts the edge of the wafer 9 is 50% or more of the entire outer peripheral length of the wafer 9.
【００３２】また、ウェハ支持部７は、天板と底板３の
中心を通る中心軸線Ｇを中心として、それぞれ図１の左
上方、右上方、左下方、右下方及び上方の五方向でウェ
ハ９を支持するのでウェハ９は安定している。これらの
ことより、ウェハ９を均一に支持出来、自重によってウ
ェハ９が反ることが起こりにくいため、スリップの発生
を抑えることができる。The wafer supporting portion 7 is provided with a wafer 9 in five directions of upper left, upper right, lower left, lower right and upper of FIG. 1 around a center axis G passing through the centers of the top plate and the bottom plate 3. Therefore, the wafer 9 is stable. From these facts, the wafer 9 can be uniformly supported, and the wafer 9 is unlikely to be warped by its own weight, so that the occurrence of slip can be suppressed.
【００３３】ウェハ搬送治具１３の突設部１５ａ、１５
ｂ、１５ｃ、１５ｄは面積が小さく、かつウェハ９縁部
と当接されるためウェハ９を傷めない。Projecting portions 15a, 15 of wafer transfer jig 13
Since b, 15c, and 15d have a small area and are in contact with the edge of the wafer 9, the wafer 9 is not damaged.
【００３４】ウェハ支持部７の内側は広く開放されてい
るため、ウェハ９同士の間には隙間が形成される。従っ
て、ウェハ９に熱分布が生ずるおそれは小さい。ウェハ
支持部７は環状であるため軽量である。中心軸線Ｇ近傍
でウェハ９と接触しないので、ウェハ９が反ってもがた
つかない。Since the inside of the wafer supporting portion 7 is widely open, a gap is formed between the wafers 9. Therefore, there is little possibility that heat distribution will occur on the wafer 9. Since the wafer support 7 is annular, it is lightweight. Since there is no contact with the wafer 9 near the central axis G, the wafer 9 does not rattle even if warped.
【００３５】ウェハ支持部７は部材として独立している
ため、その表面を精度良く加工することが出来る。な
お、ウェハ９の接触面の面粗さＲa は２μｍ以下であ
り、理想的には１μｍ以下が望ましい。このとき、ウェ
ハ９は一層スリップを生じ難い。また、熱処理用ボート
１０の材質は、石英ガラス、ＳｉＣ（炭化珪素）または
ＳｉＣ＋Ｓｉなどのセラミックス、あるいはＳｉからな
る。Since the wafer support 7 is independent as a member, its surface can be processed with high precision. The surface roughness Ra of the contact surface of the wafer 9 is 2 μm or less, and ideally 1 μm or less. At this time, the wafer 9 is less likely to slip. The material of the heat treatment boat 10 is made of quartz glass, ceramics such as SiC (silicon carbide) or SiC + Si, or Si.
【００３６】次に、本発明の第２実施形態について説明
する。本発明の第２実施形態である熱処理用ボート２０
の横断面図を図４に、図４中のＢ−Ｂ矢視断面図を図５
に、ウェハ支持部２７の斜視図を図６に示す。なお、図
１〜図３と同一要素のものについては同一符号を付して
説明は省略する。Next, a second embodiment of the present invention will be described. Heat treatment boat 20 according to a second embodiment of the present invention
4 is a cross-sectional view of FIG. 4, and a cross-sectional view of FIG.
FIG. 6 shows a perspective view of the wafer support portion 27. The same elements as those in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted.
【００３７】本発明の第２実施形態は、本発明の第１実
施形態に比べ、支柱の本数が３本である点及びウェハ支
持部のウェハ９を載置する径方向の厚みを狭くした点で
相違する。The second embodiment of the present invention is different from the first embodiment of the present invention in that the number of columns is three and the radial thickness of the wafer supporting portion on which the wafer 9 is placed is reduced. Is different.
【００３８】図４に示すように、柱状の支柱２５ａ、２
５ｂ、２５ｃには、その支柱の内側所定部に、この支柱
に対し直角に、複数の溝が配設されている。その結果、
隣接する溝同士の間に突設部２５ｄ、２５ｅ、２５ｆが
形成されている。As shown in FIG. 4, the columnar supports 25a,
5b and 25c are provided with a plurality of grooves in a predetermined portion inside the column at right angles to the column. as a result,
Protrusions 25d, 25e, 25f are formed between adjacent grooves.
【００３９】ウェハ支持部２７の底部には、嵌合穴２６
ａ、２６ｂ、２６ｃが設けられ、突設部２５ｄ、２５
ｅ、２５ｆに対し嵌合可能なようになっている。ウェハ
支持部２７の図４で示す上方はＭ字状に屈曲されてい
る。The bottom of the wafer support 27 has a fitting hole 26
a, 26b, 26c are provided, and the protruding portions 25d, 25
e, 25f. The upper part of the wafer support 27 shown in FIG. 4 is bent in an M shape.
【００４０】Ｍ字状の頂部２７ａ、２７ｂはウェハ９の
外周囲を超えている。Ｍ字状の底部２７ｅ及びウェハ支
持部２７のＭ字状に構成された部分以外であるウェハ支
持部２７ｃ、２７ｄは、ウェハ９の外縁の所定範囲部分
が載置可能なようにウェハ９の外周に沿うように形成さ
れている。The M-shaped tops 27 a and 27 b extend beyond the outer periphery of the wafer 9. The wafer supporting portions 27c and 27d other than the M-shaped bottom portion 27e and the M-shaped portion of the wafer supporting portion 27 are provided on the outer periphery of the wafer 9 so that a predetermined range portion of the outer edge of the wafer 9 can be placed. It is formed along.
【００４１】挿入口１１には、ウェハ搬送治具２３が図
１の下方より進入及び退出可能なようになっている。ウ
ェハ搬送治具２３は、その先端部が左右対称となるよう
にＶ字状に分岐されいる。A wafer transfer jig 23 can enter and exit the insertion port 11 from below in FIG. The wafer transfer jig 23 is branched into a V-shape so that the tip portion is symmetrical in the left-right direction.
【００４２】先端部の間隔は、本発明の第１実施形態と
比較して広く取られている。ウェハ搬送治具２３には突
設部２４ａ、２４ｂ、２４ｃ、２４ｄが設けられてお
り、この突設部２４ａ、２４ｂ、２４ｃ、２４ｄはウェ
ハ９縁部と当接するようになっている。The distance between the tips is wider than in the first embodiment of the present invention. The wafer transfer jig 23 is provided with projecting portions 24a, 24b, 24c, 24d, and the projecting portions 24a, 24b, 24c, 24d come into contact with the edge of the wafer 9.
【００４３】かかる構成により、本発明の第１実施形態
とほぼ同様の効果を得ることが出来る。ウェハ支持部７
の内のウェハ９縁部と当接する当接部の合計された周長
は、ウェハ９の全外周長の５０パーセント以上であるの
が望ましいのも本発明の第１実施形態と同様である。With such a configuration, substantially the same effects as those of the first embodiment of the present invention can be obtained. Wafer support 7
It is also desirable that the total peripheral length of the abutting portion in contact with the edge of the wafer 9 is 50% or more of the entire outer peripheral length of the wafer 9 as in the first embodiment of the present invention.
【００４４】次に、本発明の第３実施形態について説明
する。本発明の第３実施形態である熱処理用ボート３０
の横断面図を図７に、図７中のＣ−Ｃ矢視断面図を図８
に、ウェハ支持部７の斜視図を図９に示す。なお、図１
〜図４と同一要素のものについては同一符号を付して説
明は省略する。本発明の第３実施形態は、本発明の第２
実施形態に比べＭ字状の頂部はウェハ９の外周囲を超え
ない点で相違する。Next, a third embodiment of the present invention will be described. Heat treatment boat 30 according to a third embodiment of the present invention
7 is a cross-sectional view of FIG. 7, and a cross-sectional view of FIG.
FIG. 9 shows a perspective view of the wafer support 7. FIG.
4 are denoted by the same reference numerals, and description thereof is omitted. The third embodiment of the present invention is the second embodiment of the present invention.
The difference from the embodiment is that the M-shaped top does not exceed the outer periphery of the wafer 9.
【００４５】図７において、ウェハ支持部２７の図７で
示す上方はＭ字状に屈曲されている。但し、Ｍ字状の頂
部２７ｆ、２７ｇはウェハ９の外周囲を超えない。In FIG. 7, the upper portion of the wafer support 27 shown in FIG. 7 is bent in an M shape. However, the M-shaped tops 27f and 27g do not exceed the outer periphery of the wafer 9.
【００４６】かかる構成により、本発明の第２実施形態
とほぼ同様の効果を得つつ、底板３より突設する部分が
無いので、炉の構造による制約を受けにくい。With this configuration, while obtaining substantially the same effects as the second embodiment of the present invention, there is no portion protruding from the bottom plate 3, so that there is little restriction by the structure of the furnace.
【００４７】次に、本発明の第４実施形態について説明
する。本発明の第４実施形態である熱処理用ボート４０
の横断面図を図１０に、図１０中のＤ−Ｄ矢視断面図を
図１１に、ウェハ支持部３７の斜視図を図１２に示す。
なお、図１〜図３と同一要素のものについては同一符号
を付して説明は省略する。Next, a fourth embodiment of the present invention will be described. A heat treatment boat 40 according to a fourth embodiment of the present invention.
10 is shown in FIG. 10, a cross-sectional view taken along the line DD in FIG. 10 is shown in FIG. 11, and a perspective view of the wafer support portion 37 is shown in FIG.
The same elements as those in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted.
【００４８】本発明の第４実施形態は、本発明の第１実
施形態に比べ、ウェハ支持部のウェハ９を載置する径方
向の厚みを狭くした点、ウェハ支持部のＭ字状頂部はウ
ェハ９の外周囲を超えない点及びウェハ支持部のＭ字状
の底部を無くし、底板３の外周に沿って形成した点で相
違する。The fourth embodiment of the present invention is different from the first embodiment of the present invention in that the thickness of the wafer support in the radial direction on which the wafer 9 is placed is reduced. The difference lies in that it does not exceed the outer periphery of the wafer 9 and that the M-shaped bottom of the wafer support is eliminated and formed along the outer periphery of the bottom plate 3.
【００４９】図１０において、ウェハ支持部３７の図１
０で示す上方は、ウェハ搬送治具１３の先端との干渉を
避けるため、上方に向けて左右対称の突設部３７ａを有
している。In FIG. 10, the wafer support 37 is shown in FIG.
The upper portion indicated by 0 has a projecting portion 37a symmetrical upward and leftward to avoid interference with the tip of the wafer transfer jig 13.
【００５０】但し、突設部３７ａの上端部は底板３の外
縁を超えないように底板３の外周に沿って形成されてい
る。ウェハ支持部３７の底部には、嵌合穴３６ａ、３６
ｂ、３６ｃ、３６ｄが設けられ、突設部５ｅ、５ｆ、５
ｇ、５ｈに対し嵌合可能なようになっている。However, the upper end of the projecting portion 37a is formed along the outer periphery of the bottom plate 3 so as not to exceed the outer edge of the bottom plate 3. At the bottom of the wafer support portion 37, fitting holes 36a, 36
b, 36c and 36d are provided, and the protruding portions 5e, 5f, 5
g, 5h.
【００５１】かかる構成により、本発明の第３実施形態
とほぼ同様の効果を得つつ、底板３より突設する部分が
無いので、炉の構造による制約を受けにくい。With this configuration, while obtaining substantially the same effects as in the third embodiment of the present invention, there is no portion protruding from the bottom plate 3, so that it is less likely to be restricted by the structure of the furnace.
【００５２】次に、本発明の第５実施形態について説明
する。本発明の第５実施形態である熱処理用ボート５０
の横断面図を図１３に、図１３中のＥ−Ｅ矢視断面図を
図１４に、ウェハ支持部４７の斜視図を図１５に示す。
但し、図１４には、ウェハ搬送治具４３によるウェハ９
の取り出し手順も兼ねて示している。なお、図１〜図３
と同一要素のものについては同一符号を付して説明は省
略する。Next, a fifth embodiment of the present invention will be described. A heat treatment boat 50 according to a fifth embodiment of the present invention.
13 is shown in FIG. 13, a sectional view taken along the line EE in FIG. 13 is shown in FIG. 14, and a perspective view of the wafer support portion 47 is shown in FIG.
However, FIG. 14 shows the wafer 9 by the wafer transfer jig 43.
Is also shown. 1 to 3
The same elements as those described above are denoted by the same reference numerals and description thereof is omitted.
【００５３】図１３において、ウェハ支持部４７の左側
部４７ａ及び右側部４７ｂは左右対称にウェハ９の形状
に沿って構成されている。そして、左側部４７ａ及び右
側部４７ｂの上端同士及び下端同士は、支柱５ａ及び支
柱５ｂを結ぶ線と平行となるように、それぞれウェハ支
持部上辺４７ｃ、ウェハ支持部底辺４７ｄで連結されて
いる。In FIG. 13, the left side portion 47a and the right side portion 47b of the wafer support portion 47 are formed symmetrically along the shape of the wafer 9. The upper ends and the lower ends of the left side portion 47a and the right side portion 47b are connected by a wafer supporting portion upper side 47c and a wafer supporting portion bottom side 47d, respectively, so as to be parallel to a line connecting the columns 5a and 5b.
【００５４】即ち、ウェハ支持部４７は一体として形成
された切れ目の存在しない環状部材である。このウェハ
支持部４７の左側部４７ａ、右側部４７ｂ、ウェハ支持
部上辺４７ｃ及びウェハ支持部底辺４７ｄの上面は精度
良く加工されており、ウェハ９を載置可能なようになっ
ている。That is, the wafer support portion 47 is an annular member formed integrally and without a cut. The upper surfaces of the left side portion 47a, the right side portion 47b, the wafer support portion upper side 47c, and the wafer support portion bottom side 47d of the wafer support portion 47 are precisely processed so that the wafer 9 can be placed thereon.
【００５５】ウェハ支持部４７の底部には、嵌合穴４６
ａ、４６ｂ、４６ｃ、４６ｄが設けられ、突設部５ｅ、
５ｆ、５ｇ、５ｈに対し嵌合可能なようになっている。
ウェハ搬送治具４３はほぼ長方形であり、前方にＬ字状
の掛部４５ａ、後方にＬ字状の掛部４５ｂ、４５ｃが配
設されている。A fitting hole 46 is provided at the bottom of the wafer support 47.
a, 46b, 46c, 46d are provided, and the protruding portions 5e,
5f, 5g, and 5h can be fitted.
The wafer transfer jig 43 is substantially rectangular, and has an L-shaped hook 45a at the front and L-shaped hooks 45b and 45c at the rear.
【００５６】次に、このウェハ搬送治具４３を用いて熱
処理用ボート５０よりウェハ９を取り出す方法について
図１４に従い説明する。Next, a method of taking out the wafer 9 from the heat treatment boat 50 using the wafer transfer jig 43 will be described with reference to FIG.
【００５７】図１４（Ａ）において、ウェハ搬送治具４
３を左方より右方に水平に進入させる。このときのウェ
ハ搬送治具４３とウェハ９の間の位置関係は図１３に示
す通りである。次に、図１４（Ｂ）に進み、ウェハ搬送
治具４３を僅かに下にずらす。続いて、ウェハ搬送治具
４３を左方に少し引く。In FIG. 14A, the wafer transfer jig 4
3 goes horizontally from the left to the right. At this time, the positional relationship between the wafer transfer jig 43 and the wafer 9 is as shown in FIG. Next, proceeding to FIG. 14B, the wafer transfer jig 43 is slightly shifted downward. Subsequently, the wafer transfer jig 43 is slightly pulled leftward.
【００５８】このとき、ウェハ９の周縁底部は掛部４５
ａに掛かる位置となる。この状態で、ウェハ搬送治具４
３を上に水平状態を維持しつつ持ち上げる。以上によ
り、ウェハ９を熱処理用ボート５０より取り出すことが
できる。At this time, the bottom of the peripheral edge of the wafer 9 is
a. In this state, the wafer transfer jig 4
3 is lifted while maintaining a horizontal state. As described above, the wafer 9 can be taken out from the heat treatment boat 50.
【００５９】かかる構成により、本発明の第１実施形態
とほぼ同様の効果を得ることができる。With this configuration, it is possible to obtain substantially the same effects as in the first embodiment of the present invention.
【００６０】[0060]
【発明の効果】以上説明したように本発明によれば、被
処理体は、全周又は一部周囲が環状に形成された被処理
体載置手段の上に載置されるので安定する。これらのこ
とより、被処理体を均一に支持出来、自重によって被処
理体が反ることが起こりにくいため、スリップの発生を
抑えることができる。また、環状に形成された被処理体
載置手段の内側には空間が形成されるため、熱分布が生
ずるおそれは小さい。As described above, according to the present invention, the object to be processed is placed on the object-to-be-processed mounting means having the entire periphery or a part thereof formed in an annular shape, so that the object is stabilized. Accordingly, the object to be processed can be uniformly supported, and the object to be processed hardly warps due to its own weight, so that occurrence of slip can be suppressed. Further, since a space is formed inside the processing object mounting means formed in an annular shape, there is little possibility that heat distribution will occur.
【図１】 本発明の第１実施形態である熱処理用ボート
の横断面図FIG. 1 is a cross-sectional view of a boat for heat treatment according to a first embodiment of the present invention.
【図２】 図１中のＡ−Ａ矢視断面図FIG. 2 is a sectional view taken along the line AA in FIG.
【図３】 ウェハ支持部の斜視図FIG. 3 is a perspective view of a wafer supporting unit.
【図４】 本発明の第２実施形態である熱処理用ボート
の横断面図FIG. 4 is a cross-sectional view of a heat treatment boat according to a second embodiment of the present invention.
【図５】 図４中のＢ−Ｂ矢視断面図5 is a sectional view taken along the line BB in FIG. 4;
【図６】 ウェハ支持部の斜視図FIG. 6 is a perspective view of a wafer support.
【図７】 本発明の第３実施形態である熱処理用ボート
の横断面図FIG. 7 is a cross-sectional view of a heat treatment boat according to a third embodiment of the present invention.
【図８】 図７中のＣ−Ｃ矢視断面図8 is a sectional view taken along the line CC in FIG. 7;
【図９】 ウェハ支持部の斜視図FIG. 9 is a perspective view of a wafer supporting unit.
【図１０】 本発明の第４実施形態である熱処理用ボー
トの横断面図FIG. 10 is a cross-sectional view of a boat for heat treatment according to a fourth embodiment of the present invention.
【図１１】 図１０中のＤ−Ｄ矢視断面図11 is a sectional view taken along the line DD in FIG.
【図１２】 ウェハ支持部の斜視図FIG. 12 is a perspective view of a wafer supporting unit.
【図１３】 本発明の第５実施形態である熱処理用ボー
トの横断面図FIG. 13 is a cross-sectional view of a heat treatment boat according to a fifth embodiment of the present invention.
【図１４】 図１３中のＥ−Ｅ矢視断面図14 is a sectional view taken along the line EE in FIG. 13;
【図１５】 ウェハ支持部の斜視図FIG. 15 is a perspective view of a wafer supporting unit.
３ 底板 ５ａ〜５ｄ、２５ａ〜２５ｃ 支柱 ５ｅ〜５ｈ、２５ｄ〜２５ｆ 突設部 ６ａ〜６ｄ、２６ａ〜２６ｃ、３６ａ〜３６ｄ、４６ａ
〜４６ｄ 嵌合穴 ７ａ〜７ｅ、２７ａ〜２７ｅ、３７ａ、４７ａ〜４７ｄ
ウェハ支持部 ９ ウェハ １０、２０、３０、４０、５０ 熱処理用ボート １１ 挿入口 １３、２３、４３ ウェハ搬送治具 １５ａ〜１５ｄ、２４ａ〜２４ｄ 突設部 ４５ａ〜４５ｃ 掛部3 Bottom plate 5a-5d, 25a-25c Prop 5e-5h, 25d-25f Projection 6a-6d, 26a-26c, 36a-36d, 46a
~ 46d Fitting holes 7a ~ 7e, 27a ~ 27e, 37a, 47a ~ 47d
Wafer support portion 9 Wafer 10, 20, 30, 40, 50 Heat treatment boat 11 Insertion opening 13, 23, 43 Wafer transfer jigs 15a to 15d, 24a to 24d Projecting portions 45a to 45c Hanging portions
フロントページの続き Ｆターム(参考） 5F031 CA02 HA64 MA28 PA16 PA20 5F045 AA03 AA20 BB13 DP19 DQ05 EM09 Continued on the front page F term (reference) 5F031 CA02 HA64 MA28 PA16 PA20 5F045 AA03 AA20 BB13 DP19 DQ05 EM09
Claims (7)
と、該支柱の内側所定部に該支柱に対し直角に、かつ等
間隔に配設された複数の溝と、該溝同士の間に形成され
た突設部と、該突設部に嵌合される嵌合穴が底部所定箇
所に配設され、全周又は一部周囲が環状に形成された被
処理体載置手段とを備えたことを特徴とする熱処理用ボ
ート。1. A plurality of posts fixed between a top plate and a bottom plate, a plurality of grooves provided at predetermined portions inside the posts at right angles to the posts and at equal intervals; A protruding portion formed between the protruding portion, a fitting hole to be fitted to the protruding portion is disposed at a predetermined bottom portion, and A boat for heat treatment, comprising:
処理体搬送治具を備えた請求項１記載の熱処理用ボー
ト。2. The heat treatment boat according to claim 1, further comprising a workpiece conveying jig on which a predetermined peripheral portion of the workpiece is placed.
の抜き差し方向所定部が開口された挿入口を有し、前記
被処理体搬送治具は、該挿入口より抜き差しされる請求
項２記載の熱処理用ボート。3. The object-to-be-processed mounting means has an insertion opening in which a predetermined portion of the object to be processed in the insertion / removal direction is opened, and the object-to-be-processed jig is inserted and removed from the insertion opening. Item 2. The heat treatment boat according to Item 2.
搬送治具の先端が当たらないように外方に屈曲された請
求項２又は請求項３記載の熱処理用ボート。4. The heat treatment boat according to claim 2, wherein the processing object mounting means is bent outward so that a tip of the processing object transporting jig does not hit.
板及び／又は前記底板の外周を超えない請求項１、２、
３又は４記載の熱処理用ボート。5. An apparatus according to claim 1, wherein an outer periphery of said processing object mounting means does not exceed an outer periphery of said top plate and / or said bottom plate.
The boat for heat treatment according to 3 or 4.
Ｂ０６０１で定める算術平均粗さＲa １μｍ以下である
請求項１、２、３、４又は５記載の熱処理用ボート。6. The surface roughness of the object contact surface is JIS.
The heat treatment boat according to claim 1, 2, 3, 4, or 5, wherein the arithmetic average roughness Ra defined by B0601 is 1 μm or less.
手段の前記被処理体との当接部分の合計された周長は、
前記被処理体の全外周長の５０パーセント以上である請
求項１、２、３、４、５又は６記載の熱処理用ボート。7. A total perimeter of an abutting portion of the object-to-be-processed mounting means, which is formed in an annular shape, is in contact with the object to be processed.
The heat treatment boat according to claim 1, 2, 3, 4, 5, or 6, wherein the length is at least 50% of the entire outer peripheral length of the object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000131223A JP2001313267A (en) | 2000-04-28 | 2000-04-28 | Heat treating boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000131223A JP2001313267A (en) | 2000-04-28 | 2000-04-28 | Heat treating boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001313267A true JP2001313267A (en) | 2001-11-09 |
Family
ID=18640160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000131223A Pending JP2001313267A (en) | 2000-04-28 | 2000-04-28 | Heat treating boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001313267A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310848A (en) * | 2005-04-25 | 2006-11-09 | Tera Semicon Corp | Manufacturing device of semiconductor, manufacturing method of substrate loading holder thereof, its substrate loading batch processing boat, and loading and/or unloading method of semiconductor substrate |
| WO2007099786A1 (en) * | 2006-02-23 | 2007-09-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
-
2000
- 2000-04-28 JP JP2000131223A patent/JP2001313267A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310848A (en) * | 2005-04-25 | 2006-11-09 | Tera Semicon Corp | Manufacturing device of semiconductor, manufacturing method of substrate loading holder thereof, its substrate loading batch processing boat, and loading and/or unloading method of semiconductor substrate |
| JP4619984B2 (en) * | 2005-04-25 | 2011-01-26 | 株式会社テラセミコン | Semiconductor manufacturing apparatus and semiconductor substrate loading and / or unloading method. |
| WO2007099786A1 (en) * | 2006-02-23 | 2007-09-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
| US8012888B2 (en) | 2006-02-23 | 2011-09-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
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