JP2001308053A - Method of cleaning electrode or copper wiring fitted with copper scum - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning method for making a flat electrode or wiring which is free of metallic pollution and besides is flat, by removing the copper scum formed on the surface of the copper terminal or copper wiring of a polished substrate. SOLUTION: This cleaning method for a substrate extinguishes copper scum adhering to a copper electrode, through washing in water containing a hydrogen peroxide by 0.1-0.6 wt.% a polished substrate, where copper scum adheres to the surface of a copper electrode, and which is obtained by removing a part of an insulating layer by polishing, interposing polishing agent slurry between that substrate and a polishing pad, and using the polishing pad, a substrate which has a permalloy layer on an AlTiC substrate, a copper electrode on the permalloy layer, and further an aluminum oxide insulating layer deposited on the surfaces of the permalloy layer and the copper electrode.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ハ−ド・ディスク
・ドライブ（ＨＤＤ）に用いる磁気ヘッド基板、タング
ステン電極、銅配線が設けられた半導体デバイス基板な
ど、基盤に銅端子または銅配線が設けられ、さらにその
表面に絶縁層が設けられた基板を化学機械研磨（ＣＭ
Ｐ）して絶縁層の一部を剥離させて銅端子または銅配線
を露出させて得られた研磨基板の銅電極または銅配線に
付着した銅スカムを除去する洗浄方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic head substrate used for a hard disk drive (HDD), a tungsten electrode, a semiconductor device substrate provided with copper wiring, etc., and a copper terminal or copper wiring provided on a base. And a substrate provided with an insulating layer on its surface is subjected to chemical mechanical polishing (CM
The present invention relates to a cleaning method for removing a copper scum attached to a copper electrode or a copper wiring of a polished substrate obtained by exposing a copper terminal or a copper wiring by exposing a part of an insulating layer by P).

【０００２】[0002]

【従来の技術】ＨＤＤの記憶容量の増大に伴い、近年磁
気誘導型薄膜磁気ヘッドから磁気誘導書き込み・磁気抵
抗読み出しの複合型薄膜磁気ヘッド（いわゆるＭＲヘッ
ド）への移行が進んでいる。磁気ヘッド基板１の製造工
程において、図１に示すようにアルミニウム（ＡｌＴｉ
Ｃ）基盤２の表面に鉄−ニッケル層、鉄−ニッケル−コ
バルト層、鉄−ニッケル−リン層、鉄−コバルト−クロ
ム層、コバルト−ニッケル−タンタル層などのパ−マロ
イ層３が形成され、パ−マロイ層の上に銅端子４が設け
られ、パ−マロイ層３と銅端子４の表面に酸化アルミニ
ウムの絶縁薄膜５が形成された磁気ヘッド基板を、ポリ
ウレタンパッドを用い、基盤とパッド間に研磨剤スラリ
−を介在させながら化学機械研磨（ＣＭＰ）して絶縁層
の一部を剥離させて銅端子４を露出させる平坦化処理工
程が存在する。2. Description of the Related Art With the increase in the storage capacity of HDDs, the shift from a magnetic induction type thin film magnetic head to a magnetic induction writing / magnetic resistance reading combined type thin film magnetic head (so-called MR head) has recently been progressing. In the manufacturing process of the magnetic head substrate 1, as shown in FIG.
C) A permalloy layer 3 such as an iron-nickel layer, an iron-nickel-cobalt layer, an iron-nickel-phosphorus layer, an iron-cobalt-chromium layer, and a cobalt-nickel-tantalum layer is formed on the surface of the substrate 2. A magnetic head substrate in which a copper terminal 4 is provided on a permalloy layer and an insulating thin film 5 of aluminum oxide is formed on the surface of the permalloy layer 3 and the copper terminal 4 is formed by using a polyurethane pad between the base and the pad. There is a flattening process for exposing a copper terminal 4 by exposing a part of the insulating layer by chemical mechanical polishing (CMP) with an abrasive slurry interposed therebetween.

【０００３】しかしながら、化学機械研磨された基板１
の表面の銅端子４表面には研磨された微粒の銅屑（スカ
ム）６や固結した砥粒７が付着する。同様なことが、セ
ラミックやシリコン基盤の上にタングステン電極および
銅配線が設けられた半導体デバイス基板など、基盤に銅
配線が設けられ、さらにその表面にポリイミド絶縁層が
設けられた基板を化学機械研磨（ＣＭＰ）して絶縁層の
一部を剥離させて銅端子または銅配線を露出させる平坦
化処理の際にも生じる（特開平１０−２７５７９５号、
同１０−２８４４５２号）。[0003] However, the chemical mechanically polished substrate 1
Polished fine copper dust (scum) 6 and solidified abrasive grains 7 adhere to the surface of the copper terminal 4. The same applies to chemical mechanical polishing of substrates with copper wiring on the substrate, such as a semiconductor device substrate with a tungsten electrode and copper wiring on a ceramic or silicon substrate, and a polyimide insulation layer on the surface. (CMP) also occurs during a planarization process in which a part of an insulating layer is peeled off to expose a copper terminal or a copper wiring (Japanese Patent Application Laid-Open No. 10-275799,
No. 10-284452).

【０００４】基板の層間絶縁層や銅端子表面に固結した
砥粒を除くにはブラシを利用したスクラブ洗浄にて充分
である。かかる研磨屑（スカム）や固結した砥粒を除く
洗浄方法としてスクラブ洗浄して固結した砥粒を除いた
後、希フッ酸水でリンス洗浄して金属スカムを溶解除去
する方法が提案されている（月刊セミコンダクタ−ワ−
ルド １９９７．２；９９−１０２頁。月刊セミコンダ
クタ− ワ−ルド１９９７．３；９２−９５頁）。[0004] Scrub cleaning using a brush is sufficient to remove abrasive grains solidified on the interlayer insulating layer of the substrate and the surface of the copper terminal. As a cleaning method for removing such polishing debris (scum) and solidified abrasive grains, a method has been proposed in which scrub cleaning is performed to remove the solidified abrasive grains, followed by rinsing with dilute hydrofluoric acid water to dissolve and remove metal scum. (Monthly Semiconductor-
Ludo 1997.2; 99-102. Monthly Semiconductor World 1997.3; pp. 92-95).

【０００５】また、特開平１０−２７５７９５号、同１
０−２８４４５２号公報で提案されるように、酸（塩
酸、フッ酸、硫酸）と過酸化水素水の混合液（ＳＣ−
２）、水酸化アンモニウムと過酸化水素水との混合液
（ＳＣ−１）、水酸化アンモニウムと過酸化水素水と有
機酸または有機酸アンモニウム塩の混合液、水酸化アン
モニウムと過酸化水素水とオゾンとの混合液、オゾン含
有水などを洗浄水として用いることも行われている。[0005] Japanese Patent Application Laid-Open No. 10-275799,
As proposed in Japanese Patent Application No. 0-284452, a mixture of an acid (hydrochloric acid, hydrofluoric acid, sulfuric acid) and a hydrogen peroxide solution (SC-
2), a mixed solution of ammonium hydroxide and hydrogen peroxide solution (SC-1), a mixed solution of ammonium hydroxide and hydrogen peroxide solution and an organic acid or an organic acid ammonium salt, ammonium hydroxide and hydrogen peroxide solution A mixture of ozone, ozone-containing water and the like are also used as washing water.

【０００６】しかしながら、ＬＳＩの超高集積化と共に
デバイスパタ−ンが急速に微細化し、それと共にデバイ
スや銅端子を不良化する微粒子のサイズも著しく微細化
し、微粒子が小さくなる程、銅端子や銅配線に対する付
着力も増加し、銅スカム微粒子の除去が困難となり、基
板の製造歩留まりについては不良率が約２０％と高くな
っている。However, with the ultra-high integration of the LSI, the device pattern is rapidly miniaturized, and the size of the fine particles which make the device or the copper terminal defective is also extremely fine. The adhesive force to the wiring also increases, making it difficult to remove the copper scum fine particles, and the defective rate of the production yield of the substrate is as high as about 20%.

【０００７】[0007]

【発明が解決しようとする課題】本発明は、銅端子を有
する薄膜磁気ヘッド基板や、銅配線を有する半導体デバ
イス基板の製造において、絶縁層の一部を化学機械研磨
により剥離して銅端子や銅配線を露出化して得られた銅
スカム付着研磨基板より、銅スカムを除去する洗浄方法
の提供を目的とする。SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing a thin film magnetic head substrate having a copper terminal or a semiconductor device substrate having a copper wiring, wherein a part of an insulating layer is peeled off by chemical mechanical polishing. An object of the present invention is to provide a cleaning method for removing copper scum from a copper scum-adhered polished substrate obtained by exposing a copper wiring.

【０００８】[0008]

【課題を解決するための手段】本発明の請求項１は、Ａ
ｌＴｉＣ基盤の表面にパ−マロイ層を、そのパ−マロイ
層の上に銅電極を、更にパ−マロイ層および銅電極の表
面に蒸着された酸化アルミニウム絶縁層を有する基板
を、研磨パッドを用いて該基板と研磨パッド間に研磨剤
スラリ−を介在させて研磨して絶縁層の一部を除去して
得られた銅スカムが銅電極表面に付着した研磨基板を、
過酸化水素を０．１〜０．６重量％含有する水で洗浄し
て銅電極に付着した銅スカムを消滅させることを特徴と
する、基板の洗浄方法を提供するものである。A first aspect of the present invention is a method of manufacturing a semiconductor device comprising:
Using a polishing pad, a substrate having a permalloy layer on the surface of the TiC substrate, a copper electrode on the permalloy layer, and an aluminum oxide insulating layer deposited on the surface of the permalloy layer and the copper electrode. A polishing substrate having a copper scum obtained by removing a part of the insulating layer by polishing with an abrasive slurry interposed between the substrate and the polishing pad and adhering to the surface of the copper electrode,
It is an object of the present invention to provide a method for cleaning a substrate, characterized by cleaning with water containing 0.1 to 0.6% by weight of hydrogen peroxide to eliminate copper scum attached to a copper electrode.

【０００９】洗浄液中の過酸化水素の存在により、化学
機械研磨された基板の銅端子に付着した微細銅スカムが
消滅する。過酸化水素の濃度が高いと、銅端子の部分に
もエッチングが生じ、ディッシングが大きくなり、傷む
ので０．６重量％以下が好ましい。Due to the presence of hydrogen peroxide in the cleaning solution, fine copper scum attached to the copper terminals of the substrate subjected to chemical mechanical polishing disappears. If the concentration of hydrogen peroxide is high, the etching also occurs at the copper terminals, dishing increases, and the copper terminals are damaged, so that the content is preferably 0.6% by weight or less.

【００１０】本発明の請求項２は、基板のＣＭＰ研磨に
用いられた上記研磨剤スラリ−が、（ａ）平均粒径が
０．０５〜０．５μｍのα−アルミナと、ベ−マイトの
混合物砥粒であり、その重量比が固形分換算で１：０．
１〜０．３である砥粒 ０．１〜１０重量％、（ｂ）水
８５〜９６重量％、（ｃ）硝酸アルミニウムまたは硝
酸ニッケル ０．１〜２重量％および（ｄ）ヘキサメタ
燐酸ソ−ダ ０．１〜０．５重量％を含有するものであ
ることを特徴とする。According to a second aspect of the present invention, the abrasive slurry used for the CMP polishing of the substrate comprises (a) α-alumina having an average particle size of 0.05 to 0.5 μm, and boehmite. A mixture of abrasive grains whose weight ratio is 1: 0.
0.1 to 10% by weight of abrasive grains of 1 to 0.3, (b) 85 to 96% by weight of water, (c) 0.1 to 2% by weight of aluminum nitrate or nickel nitrate, and (d) sodium hexametaphosphate. D. It is characterized by containing 0.1 to 0.5% by weight.

【００１１】端子にスクラッチ傷が生じることがなく、
適度な研磨速度を与える。また、パ−マロイ層の鉄成分
が研磨されて生じた鉄スカムの基板への付着がヘキサメ
タ燐酸ソ−ダにより防止される。There is no scratch on the terminal,
Gives an appropriate polishing rate. Also, the adhesion of iron scum generated by polishing the iron component of the permalloy layer to the substrate is prevented by sodium hexametaphosphate.

【００１２】本発明の請求項３は、ＡｌＴｉＣ基盤の表
面にパ−マロイ層を、そのパ−マロイ層の上に銅電極
を、更にパ−マロイ層および銅電極の表面に蒸着された
酸化アルミニウム絶縁層を有する基板を、研磨パッドを
用いて該基板と研磨パッド間に研磨剤スラリ−を介在さ
せて研磨して絶縁層の一部を除去して得られた銅スカム
が銅電極表面に付着した研磨基板を、過酸化水素 ０．
１〜０．６重量％およびヘキサメタ燐酸ソ−ダ ０．０
２〜０．５重量％含有する水で洗浄して銅電極に付着し
た銅スカムを消滅させることを特徴とする基板の洗浄方
法を提供するものである。A third aspect of the present invention is to provide a permalloy layer on the surface of an AlTiC substrate, a copper electrode on the permalloy layer, and aluminum oxide deposited on the surface of the permalloy layer and the copper electrode. A substrate having an insulating layer is polished using a polishing pad with an abrasive slurry interposed between the substrate and the polishing pad to remove a portion of the insulating layer, and the resulting copper scum adheres to the surface of the copper electrode. The polished substrate thus obtained was treated with hydrogen peroxide 0.
1 to 0.6% by weight and sodium hexametaphosphate 0.0
An object of the present invention is to provide a method for cleaning a substrate, characterized in that copper scum adhered to a copper electrode is eliminated by washing with water containing 2 to 0.5% by weight.

【００１３】洗浄液中の過酸化水素の存在により、化学
機械研磨された基板の銅端子に付着した微細銅スカムが
消滅する。また、基板に付着した鉄スカムがヘキサメタ
燐酸ソ−ダにより溶解し、消滅する。Due to the presence of hydrogen peroxide in the cleaning solution, fine copper scum attached to the copper terminals of the substrate subjected to the chemical mechanical polishing disappears. Further, the iron scum attached to the substrate is dissolved by sodium hexametaphosphate and disappears.

【００１４】本発明の請求項４は、セラミック基盤の表
面に回路、銅配線およびタングステン電極が形成され、
さらに銅配線、タングステン電極の表面にポリイミド絶
縁層を有する基板を、研磨パッドを用いて該基板と研磨
パッド間に研磨剤スラリ−を介在させて研磨して絶縁層
の一部を除去して得られた銅スカムが銅配線表面に付着
した研磨基板を、過酸化水素を０．１〜０．６重量％含
有する水で洗浄して銅配線に付着した銅スカムを消滅さ
せることを特徴とする基板の洗浄方法を提供するもので
ある。According to a fourth aspect of the present invention, a circuit, a copper wiring and a tungsten electrode are formed on the surface of the ceramic substrate,
Further, a substrate having a polyimide insulating layer on the surfaces of copper wiring and tungsten electrodes is polished using a polishing pad with an abrasive slurry interposed between the substrate and the polishing pad to remove a part of the insulating layer. The polished substrate having the copper scum attached to the copper wiring surface is washed with water containing 0.1 to 0.6% by weight of hydrogen peroxide to eliminate the copper scum attached to the copper wiring. A method for cleaning a substrate is provided.

【００１５】洗浄液中の過酸化水素により銅スカムが溶
解され、消滅する。The copper scum is dissolved and disappears by the hydrogen peroxide in the cleaning solution.

【００１６】[0016]

【発明の実施の形態】以下、本発明を詳細に説明する。 被研磨物である基板：ＣＭＰ研磨され、洗浄される基板
としては、例えば（１）ＡｌＴｉＣ基盤の表面に鉄−ニ
ッケル−リンパ−マロイ層を、そのパ−マロイ層の上に
銅電極を、更にパ−マロイ層および銅電極の表面に蒸着
された酸化アルミニウム絶縁層を有する基板、（２）セ
ラミック基盤の表面に回路、銅配線およびタングステン
電極が形成され、さらに銅配線、タングステン電極の表
面にポリイミド絶縁層を有する基板、など絶縁膜の一部
が剥離され、Ｃｕ配線または銅電極などが１、または２
以上の複数露出する基板が挙げられる。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. Substrate to be polished: As a substrate to be polished and cleaned by CMP, for example, (1) an iron-nickel-lymph-malloy layer on the surface of an AlTiC base, a copper electrode on the permalloy layer, and A substrate having a permalloy layer and an aluminum oxide insulating layer deposited on the surface of the copper electrode; (2) a circuit, copper wiring and tungsten electrode formed on the surface of the ceramic substrate, and polyimide on the surface of the copper wiring and tungsten electrode A part of an insulating film such as a substrate having an insulating layer is peeled off, and Cu wiring or a copper electrode is 1 or 2
The above-mentioned plurality of exposed substrates are exemplified.

【００１７】研磨剤スラリ−：上記（１）の基板を研磨
する研磨剤スラリ−としては、（ａ）平均粒径が０．０
５〜０．５μｍのα−アルミナと、ベ−マイトの混合物
砥粒であり、その重量比が固形分換算で１：０．１〜
０．３である砥粒 ０．１〜１０重量％、（ｂ）水 ８
５〜９６重量％、（ｃ）硝酸アルミニウムまたは硝酸ニ
ッケル ０．１〜２重量％および（ｄ）ヘキサメタ燐酸
ソ−ダ ０．１〜０．５重量％を含有するものが好まし
い。Abrasive slurry: As the abrasive slurry for polishing the substrate of (1), (a) the average particle diameter is 0.0
A mixture of α-alumina and boehmite having a grain size of 5 to 0.5 μm, the weight ratio of which is 1: 0.1 to
Abrasive grains of 0.3 to 10% by weight, (b) water 8
Preferably, it contains 5 to 96% by weight, (c) 0.1 to 2% by weight of aluminum nitrate or nickel nitrate and (d) 0.1 to 0.5% by weight of sodium hexametaphosphate.

【００１８】また、上記（２）の基板を研磨する研磨剤
スラリ−としては、（ａ）平均粒径が０．０５〜０．５
μｍのα−アルミナと、ベ−マイトの混合物砥粒であ
り、その重量比が固形分換算で１：０．１〜０．３であ
る砥粒 ０．１〜１０重量％、（ｂ）水 ８５〜９６重
量％、（ｃ）硝酸アルミニウムまたは硝酸ニッケル
０．１〜２重量％および（ｄ）ヘキサメタ燐酸ソ−ダ
０．１〜０．５重量％を含有するものが好ましい。The abrasive slurry for polishing a substrate of the above (2) includes (a) an average particle diameter of 0.05 to 0.5.
A mixture of abrasive grains of α-alumina and boehmite having a μm of 0.1 to 10% by weight in a weight ratio of 1: 0.1 to 0.3 in terms of solid content. 85 to 96% by weight, (c) aluminum nitrate or nickel nitrate
0.1 to 2% by weight and (d) sodium hexametaphosphate
Those containing 0.1 to 0.5% by weight are preferred.

【００１９】研磨剤スラリ−中に占める（ａ）成分の砥
粒の含有量は、０．０５〜１０重量％、好ましくは０．
１〜３重量％である。０．０５重量％未満では実用的な
研磨速度が得られない。１０重量％を超えても効果のよ
り向上は望めず、多く用いるのは経済的に不利である。The content of the abrasive grains of component (a) in the abrasive slurry is 0.05 to 10% by weight, preferably 0.1 to 10% by weight.
1 to 3% by weight. If it is less than 0.05% by weight, a practical polishing rate cannot be obtained. If the content exceeds 10% by weight, no further improvement in the effect can be expected, and it is economically disadvantageous to use many of them.

【００２０】（ｂ）成分の分散媒としては、水単独、ま
たは水を主成分（分散媒中、７０〜９９重量％）とし、
アルコ−ル、グリコ−ル等の水溶性有機溶媒を副成分
（１〜３０重量％）として配合したものが使用できる。
水は、０．１μｍカ−トリッジフィルタで濾過して得た
できる限ぎり巨大粒子を含まない水、蒸留水が好まし
い。アルコ−ルとしては、メチルアルコール、エチルア
ルコール、イソプロピルアルコールが、グリコ−ル類と
しては、エチレングリコール、テトラメチレングリコー
ル、ジエチレングリコ−ル、プロピレングリコ−ル、ポ
リエチレングリコ−ル、等が挙げられる。As the dispersion medium of the component (b), water alone or water as a main component (70 to 99% by weight in the dispersion medium)
A mixture in which a water-soluble organic solvent such as alcohol or glycol is blended as an auxiliary component (1 to 30% by weight) can be used.
The water is preferably water containing as little macroparticles as possible and distilled water obtained by filtration through a 0.1 μm cartridge filter. Examples of the alcohol include methyl alcohol, ethyl alcohol, and isopropyl alcohol, and examples of the glycols include ethylene glycol, tetramethylene glycol, diethylene glycol, propylene glycol, and polyethylene glycol.

【００２１】研磨剤スラリ−中に占める水性分散媒の含
有量は、８５〜９６重量％、好ましくは９０〜９６重量
％である。８５重量％未満ではスラリ−の粘度が高くな
り研磨剤スラリ−の基板または研磨パッド上への供給性
およびスラリ−の貯蔵安定性が悪い。The content of the aqueous dispersion medium in the abrasive slurry is 85 to 96% by weight, preferably 90 to 96% by weight. If the content is less than 85% by weight, the viscosity of the slurry becomes high, so that the supply of the abrasive slurry onto the substrate or the polishing pad and the storage stability of the slurry are poor.

【００２２】（ｃ）成分の水溶性アルミニウム硝酸塩ま
たはニッケル硝酸塩は、基板の研磨速度の向上に作用す
る。かかる水溶性無機塩は、研磨剤スラリ−中、０．１
〜２重量％の量用いられる。（ｄ）成分のヘキサメタリ
ン酸ソ−ダは、パ−マロイ層の鉄成分が研磨されて鉄ス
カムとして基板表面に付着するのを防止する。ヘキサメ
タリン酸ソ−ダは、スラリ−中、０．１〜０．５重量％
用いる。The water-soluble aluminum nitrate or nickel nitrate as the component (c) acts to improve the polishing rate of the substrate. Such a water-soluble inorganic salt is contained in an abrasive slurry at 0.1%.
２2% by weight are used. The component (d) soda hexametaphosphate prevents the iron component of the permalloy layer from being polished and adhered to the substrate surface as iron scum. Sodium hexametaphosphate is 0.1 to 0.5% by weight in the slurry.
Used.

【００２３】上記（ａ）、（ｂ）、（ｃ）および（ｄ）
成分のほかに、他の研磨助剤を配合してもよい。かかる
研磨助剤としては、ｐＨ調整剤、防かび剤、防錆剤、消
泡剤、界面活性剤、キレ−ト剤等が挙げられ、これら
は、スラリ−の分散貯蔵安定性、研磨速度の向上の目的
で加えられる。The above (a), (b), (c) and (d)
In addition to the components, other polishing aids may be blended. Examples of such a polishing aid include a pH adjuster, a fungicide, a rust preventive, an antifoaming agent, a surfactant, a chelating agent, and the like. Added for the purpose of improvement.

【００２４】基板の化学機械研磨は、キャリアヘッドに
基板を保持し、ヘッドを回転させ、回転している研磨プ
ラテン面上に研磨剤スラリ−を供給しつつ、ヘッドを下
降させて基板をプラテンに押し付け、研磨プラテンと基
板を摺動させて絶縁層の一部を剥離させ、電極または配
線を露出させる平坦化処理を行う。または、バキュ−ム
チャックに基板を保持させ、これを回転し、基板上に研
磨剤スラリ−を供給しつつ、チャック上に離れて設けら
れた研磨パッドを回転させ、これを下降させて研磨パッ
ドを基板に押し付け、研磨パッドと基板を摺動させて絶
縁層の一部を剥離させ、電極または配線を露出させる平
坦化処理を行う。In chemical mechanical polishing of a substrate, the substrate is held on a carrier head, the head is rotated, and an abrasive slurry is supplied onto the rotating polishing platen surface, while the head is lowered to lower the substrate on the platen. Pressing is performed, and the polishing platen and the substrate are slid to remove a part of the insulating layer, thereby performing a flattening process for exposing an electrode or a wiring. Alternatively, the substrate is held on a vacuum chuck, and the substrate is rotated to supply an abrasive slurry onto the substrate, while rotating a polishing pad provided separately on the chuck, and lowering the polishing pad to remove the polishing pad. A flattening process is performed in which a part of the insulating layer is peeled by pressing the substrate against the substrate and sliding the polishing pad and the substrate to expose an electrode or a wiring.

【００２５】ＣＭＰ研磨された基板の銅電極や銅配線、
あるいは層間絶縁層に銅スカムや固結した砥粒が付着し
ているのでこれを洗浄で落とす。固結した砥粒の除去
は、ブラシスクラブ洗浄で容易になくすことができる。
銅スカムは、過酸化水素を０．１〜０．６重量％、好ま
しくは０．２〜０．５重量％含有する水で洗浄して銅電
極または銅配線に付着した銅スカムを消滅させる。鉄ス
カムも存在するときは、過酸化水素 ０．１〜０．６重
量％およびヘキサメタ燐酸ソ−ダ ０．０２〜０．５重
量％含有する水で洗浄して銅スカムおよび鉄スカムを消
滅させるCopper electrodes and copper wiring on a substrate polished by CMP,
Alternatively, copper scum and solidified abrasive grains adhere to the interlayer insulating layer, and are removed by washing. Removal of the solidified abrasive grains can be easily eliminated by brush scrub cleaning.
The copper scum is washed with water containing 0.1 to 0.6% by weight, preferably 0.2 to 0.5% by weight of hydrogen peroxide to eliminate copper scum attached to copper electrodes or copper wiring. When iron scum is also present, copper scum and iron scum are eliminated by washing with water containing 0.1 to 0.6% by weight of hydrogen peroxide and 0.02 to 0.5% by weight of sodium hexametaphosphate.

【００２６】過酸化水素は、通常３５％濃度の過酸化水
素水が使用される。洗浄水中に占める過酸化水素の含有
量は０．１〜０．６重量％、好ましくは０．２〜０．５
重量％である。過酸化水素の濃度の増加はスカムを溶解
する速度を向上させるが多量の使用は銅端子や銅配線を
損なうので０．６重量％を上限とする。As the hydrogen peroxide, a 35% hydrogen peroxide solution is usually used. The content of hydrogen peroxide in the washing water is 0.1 to 0.6% by weight, preferably 0.2 to 0.5% by weight.
% By weight. Increasing the concentration of hydrogen peroxide increases the rate of dissolving the scum, but the use of a large amount impairs copper terminals and copper wiring, so the upper limit is 0.6% by weight.

【００２７】研磨基板の洗浄は、第一段目を固結した砥
粒除去のために０．００１重量％濃度のアンモニア水を
用いてブラシスクラブ洗浄し、ついで前記過酸化水素を
０．１〜０．６重量％含有する水で洗浄する。またはス
クラブ洗浄後、過酸化水素０．１〜０．６重量％および
ヘキサメタ燐酸ソ−ダ ０．０２〜０．５重量％含有す
る水で洗浄し、さらに純水でリンス洗浄する。後者の希
過酸化水素水を用いる洗浄はスピン洗浄でもよいし、ブ
ラシスクラブ洗浄でもよいし、超音波をかけながら洗浄
してもよい。The polishing of the polished substrate is carried out by brush scrubbing using a 0.001% by weight aqueous ammonia for removing abrasive grains solidified in the first stage, and then removing the hydrogen peroxide by 0.1 to 0.1% by weight. Wash with water containing 0.6% by weight. Alternatively, after scrub cleaning, the substrate is washed with water containing 0.1 to 0.6% by weight of hydrogen peroxide and 0.02 to 0.5% by weight of sodium hexametaphosphate, and further rinsed with pure water. The latter cleaning using a diluted hydrogen peroxide solution may be spin cleaning, brush scrub cleaning, or cleaning while applying ultrasonic waves.

【００２８】[0028]

【実施例】以下，実施例により本発明を更に詳細に説明
する。 実施例１ 純水 ４０６０ｇ、粒径０．２５μｍのα−アルミナ
１００ｇ、硝酸アルミニウム ５ｇ、コロイダルアルミ
ナ（ベ−マイト） 固形分量で１０ｇおよびヘキサメタ
燐酸ソ−ダ １０ｇを混合・攪拌し、磁気ヘッド基板用
研磨剤スラリ−（スラリ−中の過酸化水素の濃度は０．
５重量％）を調製した。The present invention will be described in more detail with reference to the following examples. Example 1 α-alumina having 4060 g of pure water and a particle size of 0.25 μm
100 g, 5 g of aluminum nitrate, 10 g of colloidal alumina (boehmite) solid content and 10 g of hexametaphosphate were mixed and stirred, and the abrasive slurry for magnetic head substrates (the concentration of hydrogen peroxide in the slurry was 0%). .
5% by weight).

【００２９】研磨される磁気ヘッド基板として、ＡｌＴ
ｉＣ基盤の表面に鉄−ニッケル−リンパ−マロイ層を、
そのパ−マロイ層の上に銅電極を、更にパ−マロイ層お
よび銅電極の表面に蒸着された酸化アルミニウム絶縁層
を有する基板を用いた。As a magnetic head substrate to be polished, AlT
an iron-nickel-lymph-malloy layer on the surface of the iC substrate,
A substrate having a copper electrode on the permalloy layer and an aluminum oxide insulating layer deposited on the surface of the permalloy layer and the copper electrode was used.

【００３０】前記研磨剤スラリ−を研磨定盤（プラテ
ン）に貼り付けた研磨パッドに滴下しつつ磁気ヘッド基
板を下降させてプラテンに基板を押し当て、研磨定盤と
基板を回転させて基板を研磨し、酸化アルミニウム層の
一部を剥離し、銅電極を露出させた。While dropping the abrasive slurry onto a polishing pad attached to a polishing platen (platen), the magnetic head substrate is lowered and the substrate is pressed against the platen, and the substrate is rotated by rotating the polishing platen and the substrate. Polishing was performed to remove part of the aluminum oxide layer, exposing the copper electrode.

【００３１】研磨後、研磨基板を０．００１重量％アン
モニア水を用いて７０秒間ブラシスクラブ洗浄し、研磨
基板の露出された複数の銅電極の表面を観察した。１０
枚の基板を研磨、スクラブ洗浄したものの内２枚が不良
品であり、銅電極の１６％位に銅電極表面に付着した銅
スカムが見い出された。ついで、このブラシスクラブ洗
浄された不良品の基板をスピナ上に置き、過酸化水素濃
度が０．５重量％の過酸化水素水を表面に流しながらス
ピン洗浄を７０秒行った。スピン乾燥して観察した基板
の端子面からは銅スカムは消滅しており、平坦な面を呈
していた。After polishing, the polished substrate was brush-scrubbed with 0.001% by weight of aqueous ammonia for 70 seconds, and the exposed surfaces of the plurality of copper electrodes on the polished substrate were observed. 10
Two of the substrates polished and scrub cleaned were defective, and copper scum adhering to the copper electrode surface was found in about 16% of the copper electrodes. Then, the defective substrate subjected to the brush scrub cleaning was placed on a spinner, and spin cleaning was performed for 70 seconds while flowing a hydrogen peroxide solution having a hydrogen peroxide concentration of 0.5% by weight over the surface. The copper scum disappeared from the terminal surface of the substrate observed by spin drying, and the substrate exhibited a flat surface.

【００３２】実施例２ 純水 ４０６０ｇ、粒径０．２５μｍのα−アルミナ
２００ｇ、硝酸アルミニウム ８０ｇおよびコロイダル
アルミナ（ベ−マイト） 固形分量で４０ｇを混合・攪
拌し、半導体デバイス基板用研磨剤スラリ−調製剤を調
製した。研磨される半導体デバイス基板として、セラミ
ック基盤の表面に回路、銅配線およびタングステン電極
が形成され、さらに銅配線、タングステン電極の表面に
ポリイミド絶縁層を有する基板を用いた。前記研磨剤ス
ラリ−を研磨定盤（プラテン）に貼り付けた研磨パッド
に滴下しつつ基板を下降させてプラテンに基板を押し当
て、研磨定盤と基板を回転させて基板を研磨し、ポリイ
ミド層の一部を剥離し、銅配線およびタングステン電極
を露出させた。Example 2 α-alumina having 4060 g of pure water and a particle size of 0.25 μm
200 g, 80 g of aluminum nitrate and 40 g of colloidal alumina (boehmite) in solid content were mixed and stirred to prepare an abrasive slurry preparation for a semiconductor device substrate. As the semiconductor device substrate to be polished, a substrate having a circuit, a copper wiring, and a tungsten electrode formed on the surface of a ceramic substrate and further having a polyimide insulating layer on the surface of the copper wiring and the tungsten electrode was used. The substrate is lowered while the abrasive slurry is dropped onto a polishing pad attached to a polishing platen (platen), and the substrate is pressed against the platen. The substrate is polished by rotating the polishing platen and the substrate to form a polyimide layer. Was peeled off to expose the copper wiring and the tungsten electrode.

【００３３】研磨後、研磨基板を０．００１重量％濃度
のアンモニア水を用いてブラシスクラブ洗浄を１００秒
行い、研磨基板の露出された複数の銅配線およびタング
ステン電極の表面を観察した。１０枚の基板を研磨、ス
クラブ洗浄したものの内２枚が不良品であり、銅配線の
２８％位に付着した銅スカムが見い出された。After polishing, the polished substrate was subjected to brush scrub cleaning using 0.001% by weight of ammonia water for 100 seconds, and the exposed surfaces of the copper wiring and the tungsten electrode on the polished substrate were observed. Of the ten substrates that were polished and scrub cleaned, two were defective and copper scum attached to about 28% of the copper wiring was found.

【００３４】ついで、このブラシスクラブ洗浄された不
良品の基板をスピナ上に置き、過酸化水素濃度が０．５
重量％の過酸化水素水を表面に流しながらスピン洗浄を
７５秒行った。スピン乾燥して観察した基板の銅配線面
からは銅スカムは消滅しており、平坦な面を呈してい
た。Then, the defective substrate having been subjected to the brush scrub cleaning is placed on a spinner, and the hydrogen peroxide concentration is set at 0.5%.
Spin cleaning was performed for 75 seconds while flowing a weight percent aqueous hydrogen peroxide solution over the surface. The copper scum disappeared from the copper wiring surface of the substrate observed by spin drying, and the substrate exhibited a flat surface.

【００３５】[0035]

【発明の効果】研磨された基板の銅電極または銅配線に
付着（形成）された銅スカムは、濃度が０．１〜０．６
重量％の過酸化水素水で洗浄することにより容易に消滅
する（銅汚染が消滅）。また、従来は、過酸化水素水に
濃度の高い酸が加えられた洗浄液が金属汚染解除に用い
られていたので、洗浄液廃液の中和などの排水処理が必
要とされたが、本発明法では不要である。The copper scum adhered (formed) to the polished copper electrode or copper wiring on the substrate has a concentration of 0.1 to 0.6.
It is easily eliminated by washing with a weight percent hydrogen peroxide solution (copper contamination is eliminated). In addition, conventionally, a cleaning solution obtained by adding a high-concentration acid to a hydrogen peroxide solution was used for decontamination of metal contamination, so that wastewater treatment such as neutralization of a cleaning solution waste liquid was required. Not required.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 従来の化学機械研磨された磁気ヘッド基板の
断面図である。FIG. 1 is a cross-sectional view of a conventional chemical mechanical polished magnetic head substrate.

【図２】 従来の化学機械研磨された磁気ヘッド基板の
平面図である。FIG. 2 is a plan view of a conventional chemical mechanical polished magnetic head substrate.

【符号の説明】[Explanation of symbols]

１ 磁気ヘッド基板 ２ ＡｉＴｉＣ基盤 ３ パ−マロイ層 ４ 銅端子 ５ 絶縁薄膜 ６ 銅屑（スカム） ７ 砥粒 DESCRIPTION OF SYMBOLS 1 Magnetic head substrate 2 AiTiC base 3 Permalloy layer 4 Copper terminal 5 Insulating thin film 6 Copper scrap (scum) 7 Abrasive grains

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 ＡｌＴｉＣ基盤の表面にパ−マロイ層
を、そのパ−マロイ層の上に銅電極を、更にパ−マロイ
層および銅電極の表面に蒸着された酸化アルミニウム絶
縁層を有する基板を、研磨パッドを用いて該基板と研磨
パッド間に研磨剤スラリ−を介在させて研磨して絶縁層
の一部を除去して得られた銅スカムが銅電極表面に付着
した研磨基板を、過酸化水素を０．１〜０．６重量％含
有する水で洗浄して銅電極に付着した銅スカムを消滅さ
せることを特徴とする、基板の洗浄方法。A substrate having a permalloy layer on the surface of an AlTiC substrate, a copper electrode on the permalloy layer, and an aluminum oxide insulating layer deposited on the surface of the permalloy layer and the copper electrode. Then, a polishing slurry is interposed between the substrate and the polishing pad using a polishing pad and polished to remove a part of the insulating layer. A method for cleaning a substrate, comprising cleaning with water containing 0.1 to 0.6% by weight of hydrogen oxide to eliminate copper scum attached to a copper electrode. 【請求項２】 研磨剤スラリ−が、（ａ）平均粒径が
０．０５〜０．５μｍのα−アルミナと、ベ−マイトの
混合物砥粒であり、その重量比が固形分換算で１：０．
１〜０．３である砥粒 ０．１〜１０重量％、（ｂ）水
８５〜９６重量％、（ｃ）硝酸アルミニウムまたは硝
酸ニッケル ０．１〜２重量％および（ｄ）ヘキサメタ
燐酸ソ−ダ ０．１〜０．５重量％を含有するものであ
ることを特徴とする、請求項１に記載の基板の洗浄方
法。2. The abrasive slurry is a mixture of (a) α-alumina having an average particle diameter of 0.05 to 0.5 μm and boehmite, the weight ratio of which is 1 in terms of solid content. : 0.
0.1 to 10% by weight of abrasive grains of 1 to 0.3, (b) 85 to 96% by weight of water, (c) 0.1 to 2% by weight of aluminum nitrate or nickel nitrate, and (d) sodium hexametaphosphate. 2. The method for cleaning a substrate according to claim 1, wherein the substrate contains 0.1 to 0.5% by weight. 【請求項３】 ＡｌＴｉＣ基盤の表面にパ−マロイ層
を、そのパ−マロイ層の上に銅電極を、更にパ−マロイ
層および銅電極の表面に蒸着された酸化アルミニウム絶
縁層を有する基板を、研磨パッドを用いて該基板と研磨
パッド間に研磨剤スラリ−を介在させて研磨して絶縁層
の一部を除去して得られた銅スカムが銅電極表面に付着
した研磨基板を、過酸化水素 ０．１〜０．６重量％お
よびヘキサメタ燐酸ソ−ダ ０．０２〜０．５重量％含
有する水で洗浄して銅電極に付着した銅スカムを消滅さ
せることを特徴とする基板の洗浄方法。3. A substrate having a permalloy layer on the surface of an AlTiC substrate, a copper electrode on the permalloy layer, and a substrate having an aluminum oxide insulating layer deposited on the surface of the permalloy layer and the copper electrode. Then, a polishing slurry is interposed between the substrate and the polishing pad using a polishing pad and polished to remove a part of the insulating layer. A substrate for washing with water containing 0.1 to 0.6% by weight of hydrogen oxide and 0.02 to 0.5% by weight of sodium hexametaphosphate to eliminate copper scum adhering to the copper electrode. Cleaning method. 【請求項４】 セラミック基盤の表面に回路、銅配線お
よびタングステン電極が形成され、さらに銅配線、タン
グステン電極の表面にポリイミド絶縁層を有する基板
を、研磨パッドを用いて該基板と研磨パッド間に研磨剤
スラリ−を介在させて研磨して絶縁層の一部を除去して
得られた銅スカムが銅配線表面に付着した研磨基板を、
過酸化水素を０．１〜０．６重量％含有する水で洗浄し
て銅配線に付着した銅スカムを消滅させることを特徴と
する、基板の洗浄方法。4. A substrate having a circuit, a copper wiring, and a tungsten electrode formed on a surface of a ceramic substrate, and further having a polyimide insulating layer on the surface of the copper wiring and the tungsten electrode, using a polishing pad between the substrate and the polishing pad. A polishing substrate having copper scum obtained by polishing with an abrasive slurry interposed and removing a part of the insulating layer adhered to the copper wiring surface,
A method for cleaning a substrate, comprising cleaning with water containing 0.1 to 0.6% by weight of hydrogen peroxide to eliminate copper scum attached to copper wiring.