JP2001300346A5 - - Google Patents

Download PDF

Info

Publication number
JP2001300346A5
JP2001300346A5 JP2000127071A JP2000127071A JP2001300346A5 JP 2001300346 A5 JP2001300346 A5 JP 2001300346A5 JP 2000127071 A JP2000127071 A JP 2000127071A JP 2000127071 A JP2000127071 A JP 2000127071A JP 2001300346 A5 JP2001300346 A5 JP 2001300346A5
Authority
JP
Japan
Prior art keywords
substrate
photoelectron emitting
photoemissive
deploy
per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000127071A
Other languages
Japanese (ja)
Other versions
JP2001300346A (en
JP3672079B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2000127071A priority Critical patent/JP3672079B2/en
Priority claimed from JP2000127071A external-priority patent/JP3672079B2/en
Publication of JP2001300346A publication Critical patent/JP2001300346A/en
Publication of JP2001300346A5 publication Critical patent/JP2001300346A5/ja
Application granted granted Critical
Publication of JP3672079B2 publication Critical patent/JP3672079B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【0006】
【課題を解決するための手段】
上記課題を解決するために、光電子放出性物質を基材の表面に配備する光電子放出材において、前記基材は、表面に突起が1cm2当たり1×104個以上形成されており、その上に光電子放出性物質が配備されていることを特徴とする光電子放出材としたものである。
また、本発明では、光電子放出性物質を基材の表面に配備する光電子放出材において、前記光電子放出性物質は、基材表面に突起が1cm2当たり1×104個以上形成されていることを特徴とする光電子放出材としたものである。
さらに、本発明では、光電子放出性物質を基材の表面に配備する光電子放出材において、前記基材は、表面に光触媒活性を有する物質で、突起を1cm2当たり1×104個以上形成されており、その上に、光電子放出性物質が配備されていることを特徴とする光電子放出材としたものである。
これらの光電子放出材は、それぞれ2種以上組合せて用いることができる。
[0006]
[Means for Solving the Problems]
In order to solve the above problem, the photoelectron emitting material to deploy the photoemissive material on a surface of a substrate, said substrate is formed collision outs 1 cm 2 per 1 × 10 4 or more on the surface, its A photoelectron emitting material characterized in that a photoelectron emitting material is disposed thereon is used as the photo electron emitting material.
Further, in the present invention, the photoelectron emitting material to deploy the photoemissive material on the surface of the substrate, wherein the light emissive material is formed on the substrate surface collision Kiga 1 cm 2 per 1 × 10 4 or more The photoelectron emitting material is characterized by
Furthermore, in the present invention, the photoelectron emitting material to deploy the photoemissive material on the surface of the substrate, wherein the substrate is a material having a photocatalytic activity on the surface, the collision force 1 cm 2 per 1 × 10 4 or more formed The light emitting material is provided on the light emitting material and the light emitting material is provided thereon.
Each of these photoelectron emitting materials can be used in combination of two or more.

【0011】
次に、本発明の特徴である表面突起の形状を説明する。
結晶粒界等の光電子放出性物質の表面欠陥では、電子の状態が不安定なため、紫外線により容易に光電子を放出する。微小な突起状に光電子放出性物質を形成すれば、電子の状態が不安定な場所の増加と比表面積が増加し、高性能な光電子放出材になる。
突起の形状は、上記表面欠陥の増加と比表面積の増加を満足すれば何れでも良いが、例えば、円錐、円柱、四角柱、四角錐、多角柱、多角錐、花弁状がある。さらに、これらの形状が、重なり合って形成した突起がある。
突起の大きさ(最も大きい部分)は、一般的には0.03μm〜60μmの範囲が好ましい。突起の高さは、一般的には0.1μm〜60μmが好ましい。
突起は、一般的には1×104個/cm2以上で、数が多い程好ましいが、実用上は加工精度の点で、上限は1×1011個/cm2である。
[0011]
Next, the shape of the surface protrusion which is a feature of the present invention will be described.
In surface defects of photoelectron emitting substances such as grain boundaries, photoelectrons are easily emitted by ultraviolet light because the state of electrons is unstable. If a photoelectron emitting material is formed in the form of minute projections, the number of places where the electron state is unstable increases and the specific surface area increases, and it becomes a high performance photoelectron emitting material.
The shape of the protrusion may be any shape as long as it satisfies the increase of the surface defects and the increase of the specific surface area, and there are, for example, a cone, a cylinder, a quadrangular prism, a quadrangular pyramid, a polygonal prism, a polygonal pyramid, and a petal. Furthermore, there are projections formed by overlapping these shapes.
Generally, the size of the projection (largest part) is preferably in the range of 0.03 μm to 60 μm. Generally, the height of the projections is preferably 0.1 μm to 60 μm.
Generally, the number of projections is 1 × 10 4 pieces / cm 2 or more, and the larger the number, the better. However, in practical terms, the upper limit is 1 × 10 11 pieces / cm 2 in terms of processing accuracy.

Claims (4)

光電子放出性物質を基材の表面に配備する光電子放出材において、前記基材は、表面に突起が1cm2当たり1×104個以上形成されており、その上に光電子放出性物質が配備されていることを特徴とする光電子放出材。In photoelectron emitting member to deploy the photoemissive material on the surface of the substrate, the substrate surface is formed collision outs 1 cm 2 per 1 × 10 4 or more, the deployment photoemissive material thereon A photoemissive material characterized in that 光電子放出性物質を基材の表面に配備する光電子放出材において、前記光電子放出性物質は、基材表面に突起が1cm2当たり1×104個以上形成されていることを特徴とする光電子放出材。In photoelectron emitting member to deploy the photoemissive material on the surface of the substrate, wherein the light emissive material, photoelectrons, characterized by being formed on the substrate surface collision Kiga 1 cm 2 per 1 × 10 4 or more Release material. 光電子放出性物質を基材の表面に配備する光電子放出材において、前記基材は、表面に光触媒活性を有する物質で、突起を1cm2当たり1×104個以上形成されており、その上に、光電子放出性物質が配備されていることを特徴とする光電子放出材。In photoelectron emitting member to deploy the photoemissive material on the surface of the substrate, wherein the substrate is a material having a photocatalytic activity on the surface, are formed a collision force 1 cm 2 per 1 × 10 4 or more, on its A photoemission material characterized in that a photoemission material is provided. 請求項1、2又は3記載の光電子放出材を、それぞれ2種以上組合せたことを特徴とする光電子放出材。A photoelectron emitting material comprising two or more of the photo electron emitting materials according to claim 1, 2 or 3 in combination.
JP2000127071A 2000-04-27 2000-04-27 Photoelectron emitting material Expired - Fee Related JP3672079B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000127071A JP3672079B2 (en) 2000-04-27 2000-04-27 Photoelectron emitting material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000127071A JP3672079B2 (en) 2000-04-27 2000-04-27 Photoelectron emitting material

Publications (3)

Publication Number Publication Date
JP2001300346A JP2001300346A (en) 2001-10-30
JP2001300346A5 true JP2001300346A5 (en) 2004-12-09
JP3672079B2 JP3672079B2 (en) 2005-07-13

Family

ID=18636735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000127071A Expired - Fee Related JP3672079B2 (en) 2000-04-27 2000-04-27 Photoelectron emitting material

Country Status (1)

Country Link
JP (1) JP3672079B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10335947B1 (en) 2019-01-18 2019-07-02 Mujin, Inc. Robotic system with piece-loss management mechanism

Similar Documents

Publication Publication Date Title
CA2450412A1 (en) Support with getter-material for microelectronic, microoptoelectronic or micromechanical device
WO2003043045A3 (en) Photocathode
US7732802B2 (en) Semiconductor light emitting device
US20030025168A1 (en) Systems with high density packing of micromachines
US6679998B2 (en) Method for patterning high density field emitter tips
KR830006804A (en) Color video theater
WO2001049817A3 (en) Microcapsule preparations and detergents and cleaning agents containing microcapsules
EP1121619A4 (en) Membrane-actuated charge controlled mirror
WO2010101348A1 (en) Group 3 nitride semiconductor light-emitting device and manufacturing method thereof
JP2001300346A5 (en)
US20100110693A1 (en) Light fixture
JP2002527791A5 (en)
US6953704B2 (en) Systems with high density packing of micromachines
JP6190051B2 (en) Method for manufacturing conversion element
EP1251503A3 (en) Data storage device
WO2004040556A3 (en) Storage holder for a compact disc
NL8600832A (en) COLOR IMAGE TUBE.
US6495296B1 (en) Method for limiting particle aggregation in a mask deposited by a colloidal suspension
US7119942B2 (en) Side spring micro-mirror
KR20020002592A (en) Membrane mask for electron beam projection lithography
JPH0128450B2 (en)
JP3066752B1 (en) Incense for incense
JP2919156B2 (en) Cathode for discharge lamp
JP2001300347A5 (en)
TW201530812A (en) Semiconductor light emitting structure