JP2001284317A5 - - Google Patents

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JP2001284317A5
JP2001284317A5 JP2000095197A JP2000095197A JP2001284317A5 JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5 JP 2000095197 A JP2000095197 A JP 2000095197A JP 2000095197 A JP2000095197 A JP 2000095197A JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5
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gas
film
etching
oxygen atom
osmium
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JP2000095197A
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JP2001284317A (en
JP3658269B2 (en
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ルテニウム、酸化ルテニウム、あるいはオスミウム、酸化オスミウムの群から選ばれる少なくとも一種類を含む固体表面に、酸素原子供与性ガスを含むガスを供給することによって、該酸素原子供与性ガスを含むガスと前記固体との非プラズマ反応を用いて該固体表面をエッチング処理してなることを特徴とする固体表面の処理方法。Ruthenium, ruthenium oxide, or osmium, to a solid surface containing at least one selected from the group of osmium oxide, by supplying a gas containing an oxygen atom donating gas, a gas containing the oxygen atom donating gas and method of processing a solid surface, characterized by comprising the solid surface was etched by using a non-plasma reaction between the solid. 前記酸素原子供与性ガスが、オゾン、ハロゲン化酸素、酸化窒素、酸素原子の群から選ばれる少なくとも一種類のガスを含んでなることを特徴とする請求項１記載の固体表面の処理方法。The method for treating a solid surface according to claim 1, wherein the oxygen atom donating gas comprises at least one kind of gas selected from the group consisting of ozone, halogenated oxygen, nitrogen oxide, and oxygen atoms. 前記酸素原子供与性ガスに、ハロゲンガス、ハロゲン化水素ガス、または還元性ガスの何れかを添加して、前記固体表面をエッチング処理してなることを特徴とする請求項１記載の固体表面の処理方法。The solid surface according to claim 1, wherein the solid surface is etched by adding any one of a halogen gas, a hydrogen halide gas, and a reducing gas to the oxygen atom donating gas. Processing method. 前記固体が、基板上に形成されたルテニウム、酸化ルテニウム、あるいはオスミウム、酸化オスミウムの群から選ばれる少なくとも一種類を含む膜、または該膜を成膜もしくはエッチング処理するための処理室の部材であることを特徴とする請求項１に記載の固体表面の処理方法。The solid is a film containing at least one selected from the group consisting of ruthenium, ruthenium oxide, osmium, and osmium oxide formed on a substrate, or a member of a processing chamber for forming or etching the film. The method for treating a solid surface according to claim 1, wherein: 前記部材が、前記基板を載置させるためのサセプタ、ガス供給口、ガス排気口、処理室の内壁、配管の内壁の少なくとも何れかであることを特徴とする請求項４に記載の固体表面の処理方法。The solid surface according to claim 4, wherein the member is at least one of a susceptor, a gas supply port, a gas exhaust port, an inner wall of a processing chamber, and an inner wall of a pipe for mounting the substrate. Processing method. 前記エッチングが２０℃以上３５０℃以下なる処理温度で行われることを特徴とする請求項１に記載の固体表面の処理方法。The solid surface treatment method according to claim 1 , wherein the etching is performed at a treatment temperature of 20C or more and 350C or less. 前記エッチングが４０℃以上１８０℃以下なる処理温度で行われることを特徴とする請求項１に記載の固体表面の処理方法。The solid surface treatment method according to claim 1, wherein the etching is performed at a treatment temperature of 40C or more and 180C or less . 基板の上方にルテニウム、酸化ルテニウム、オスミウム、または酸化オスミウムの群から選ばれる少なくとも一種類を含む膜を形成する工程と、レジストを用いて前記膜の上にマスクパターンを形成する工程と、該マスクパターンを介して前記膜を酸素原子供与性ガスを含むガスを用いてエッチング加工する工程とを備えてなり、前記エッチングが酸素原子供与性ガスを含むガスと前記膜との非プラズマ反応を用いて行われることを特徴とする半導体素子の製造方法。Ruthenium above the substrate, forming a film containing at least one kind selected from the group consisting of ruthenium oxide, osmium or osmium oxide, and forming a mask pattern on the film by using a resist, the mask Etching the film with a gas containing an oxygen atom donating gas through a pattern, wherein the etching causes a non-plasma reaction between the gas containing an oxygen atom donating gas and the film. A method for manufacturing a semiconductor device, wherein the method is performed by using the method. 前記酸素原子供与性ガスが、オゾン、ハロゲン化酸素、酸化窒素、酸素原子の群から選ばれる少なくとも一種類のガスを含んでなることを特徴とする請求項８に記載の半導体素子の製造方法。 9. The method according to claim 8 , wherein the oxygen atom donating gas contains at least one kind of gas selected from the group consisting of ozone, halogenated oxygen, nitrogen oxide, and oxygen atoms. . 前記エッチングが少なくともハロゲンガスまたはハロゲン化水素ガスを添加した酸素原子供与性ガスを含むガスを用いて行うことを特徴とする請求項８に記載の半導体素子の製造方法。 9. The method according to claim 8 , wherein the etching is performed using a gas containing an oxygen atom donating gas to which at least a halogen gas or a hydrogen halide gas is added . 前記エッチングが４０℃以上１８０℃以下の処理温度で行うことを特徴とする請求項８に記載の半導体素子の製造方法。 9. The method according to claim 8 , wherein the etching is performed at a processing temperature of 40 ° C. or more and 180 ° C. or less . 基板の上方にルテニウム、酸化ルテニウム、オスミウム、または酸化オスミウムの群から選ばれる少なくとも一種類を含む膜を形成する工程と、レジストを用いて前記膜の上に マスクパターンを形成する工程と、該マスクパターンを介して前記膜を酸素原子供与性ガスを含むガスを用いてエッチング加工する工程とを備えてなり、前記膜のエッチングが酸素原子供与性ガスを含むガスと前記膜との非プラズマ反応を用いて第１の処理温度で行われ、前記レジストの除去が前記酸素原子供与性ガスを含むガスを用いて前記第１の処理温度よりも高い処理温度で行われることを特徴とする半導体素子の製造方法。 Forming a film containing at least one selected from the group consisting of ruthenium, ruthenium oxide, osmium, and osmium oxide over a substrate; forming a mask pattern on the film using a resist ; and forming the mask. Etching the film with a gas containing an oxygen atom donating gas through a pattern, wherein the etching of the film is performed using a non-plasma gas between the gas containing an oxygen atom donating gas and the film. Reaction is performed at a first processing temperature, and the removal of the resist is performed at a processing temperature higher than the first processing temperature using a gas containing the oxygen atom donating gas. A method for manufacturing a semiconductor device. 前記第１の処理温度が４０℃以上１８０℃以下の温度範囲であることを特徴とする請求項１２に記載の半導体素子の製造方法。 The method according to claim 12 , wherein the first processing temperature is in a temperature range of 40C to 180C . 成膜処理室に搬入した基板の上方にルテニウム、酸化ルテニウム、あるいはオスミウム、酸化オスミウムの群から選ばれる少なくとも一種類を含む膜を形成する工程と、エッチング処理室に搬入した前記膜をエッチングする工程と、前記成膜処理室またはエッチング処理室の少なくとも内壁を含む領域に堆積または付着したルテニウムまたはオスミウムを含む反応生成物を除去する工程を備え、少なくとも前記膜のエッチングまたは前記反応性生物の除去が非プラズマ反応であって、酸素原子供与性ガスを含むガスを用いて行われることを特徴とする半導体装置の製造方法。Forming a film containing at least one selected from the group consisting of ruthenium, ruthenium oxide, or osmium and osmium oxide above the substrate carried into the film formation treatment chamber; and etching the film carried into the etching treatment chamber. And a step of removing a reaction product containing ruthenium or osmium deposited or attached to a region including at least the inner wall of the film formation processing chamber or the etching processing chamber, wherein at least etching of the film or removal of the reactive product is performed. A method of manufacturing a semiconductor device , which is a non-plasma reaction and is performed using a gas containing an oxygen atom donating gas .
JP2000095197A 2000-03-29 2000-03-29 Method of processing solid surface and semiconductor manufacturing apparatus, and method of manufacturing semiconductor device using the same Expired - Fee Related JP3658269B2 (en)

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