JP2001284255A - Semiconductor thin film forming system - Google Patents
Semiconductor thin film forming systemInfo
- Publication number
- JP2001284255A JP2001284255A JP2000091282A JP2000091282A JP2001284255A JP 2001284255 A JP2001284255 A JP 2001284255A JP 2000091282 A JP2000091282 A JP 2000091282A JP 2000091282 A JP2000091282 A JP 2000091282A JP 2001284255 A JP2001284255 A JP 2001284255A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- thin film
- semiconductor thin
- film forming
- sets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】この発明は、プラズマ化学反
応による半導体薄膜形成装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a semiconductor thin film by a plasma chemical reaction.
【０００２】[0002]
【従来の技術】プラズマ化学反応による半導体薄膜形成
装置は、反応室内に、プラズマを形成する一対の電極を
設け、この一対の電極の一方に基板を保持し、他方の電
極に設けた反応ガス噴出口から反応ガスを供給し、一対
の電極間に形成されるプラズマにより反応ガス噴出口か
ら供給される反応ガスを分解して、基板上に非晶質シリ
コン薄膜などを形成する装置である。2. Description of the Related Art An apparatus for forming a semiconductor thin film by a plasma chemical reaction is provided with a pair of electrodes for forming plasma in a reaction chamber, a substrate is held on one of the pair of electrodes, and a reaction gas jet is provided on the other electrode. This is an apparatus for supplying a reaction gas from an outlet, decomposing the reaction gas supplied from the reaction gas outlet by plasma formed between a pair of electrodes, and forming an amorphous silicon thin film or the like on a substrate.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上記電極に
設けられる反応ガス噴出口は、反応室内の反応ガスの流
れを良好にし、形成する薄膜の均一性を図るために、電
極面に複数個均一に配置されているが、膜形成を長時間
行った場合、反応ガス噴出口に、形成膜が堆積し、目詰
まり起こす。By the way, a plurality of reaction gas outlets provided in the above-mentioned electrode are formed on the electrode surface in order to improve the flow of the reaction gas in the reaction chamber and to make the formed thin film uniform. However, when the film is formed for a long time, the formed film is deposited at the reaction gas outlet and clogged.
【０００４】反応ガス噴出口が目詰まりすると、反応ガ
スの均一な流れが得られなくなり、形成膜の均一性が損
なわれる。If the reactant gas outlet is clogged, a uniform flow of the reactant gas cannot be obtained and the uniformity of the formed film is impaired.
【０００５】このため、反応ガス噴出口の目詰まりを解
消するために、電極の清掃や、電極の交換等のメンテナ
ンスを定期的に行う必要がある。For this reason, in order to eliminate clogging of the reaction gas outlet, it is necessary to periodically perform maintenance such as cleaning of electrodes and replacement of electrodes.
【０００６】ところが、このメンテナンスを頻繁に行う
ことは、その間、製造ラインが止まることになるので、
それだけ製造コストが上がるという問題がある。However, if this maintenance is performed frequently, the production line is stopped during that time.
There is a problem that the manufacturing cost increases accordingly.
【０００７】そこで、この発明は、上記のメンテナンス
周期を長くすることにより、均一な膜形成を長時間行え
るようにしようとするものである。Therefore, the present invention is intended to make uniform film formation for a long time by extending the above-mentioned maintenance cycle.
【０００８】[0008]
【課題を解決するための手段】この発明は、上記の課題
を解決するために、電極に複数個の反応ガス噴出口を、
複数組設け、この複数組の反応ガス噴出口を、噴出口遮
蔽手段により、各組ごとに切り替えて開放するようにし
たのである。According to the present invention, in order to solve the above-mentioned problems, a plurality of reaction gas injection ports are provided on an electrode,
A plurality of sets are provided, and the plurality of sets of reaction gas outlets are switched and opened for each set by the outlet shielding means.
【０００９】このように、電極に、複数組の反応ガス噴
出口を設け、各組ごとに切り替えて反応ガス噴出口を使
用すると、組数分だけメンテナンス周期を長くすること
ができる。例えば、２組の反応ガス噴出口を設け、１組
目の反応ガス噴出口が目詰まりする時期になると、噴出
口遮蔽手段により、１組目の反応ガス噴出口を遮蔽し、
２組目の反応ガス噴出口を開放することにより、少なく
とも、メンテナンス周期を２倍にすることが可能にな
る。As described above, when a plurality of sets of reaction gas outlets are provided on the electrode and the reaction gas outlets are used by switching for each set, the maintenance cycle can be lengthened by the number of sets. For example, two sets of reactive gas jets are provided, and when the first set of reactive gas jets is clogged, the first set of reactive gas jets is shielded by the jet port shielding means,
By opening the second set of reaction gas outlets, it is possible to at least double the maintenance cycle.
【００１０】[0010]
【発明の実施の形態】この発明に係る半導体薄膜形成装
置の一形態を図面に基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a semiconductor thin film forming apparatus according to the present invention will be described with reference to the drawings.
【００１１】図１は、半導体薄膜形成装置の概略構成を
示している。この半導体薄膜形成装置は、ガラス石英な
ど基板１上に非晶質シリコン薄膜のなどの半導体薄膜を
形成するための反応室２を構成するチャンバー３を備え
ている。このチャンバー３には、その側壁に基板１を出
し入れするための搬入口４及び搬出口５を、また底壁に
排気口６をそれぞれ設置している。FIG. 1 shows a schematic configuration of a semiconductor thin film forming apparatus. The semiconductor thin film forming apparatus includes a chamber 3 forming a reaction chamber 2 for forming a semiconductor thin film such as an amorphous silicon thin film on a substrate 1 such as glass quartz. The chamber 3 has a carry-in port 4 and a carry-out port 5 for loading and unloading the substrate 1 on its side wall, and an exhaust port 6 on its bottom wall.
【００１２】上記チャンバー３内には、下部電極７と上
部電極８が上下に対向するように、一対設置されてい
る。A pair of a lower electrode 7 and an upper electrode 8 are provided in the chamber 3 so as to face up and down.
【００１３】下部電極７は、チャンバー３の底壁に絶縁
体９を介して、摺動自在に挿入された支軸１０により、
上下動かつ回転可能に支持されており、その上面に基板
１が載置されるようになっている。The lower electrode 7 is supported by a support shaft 10 slidably inserted into the bottom wall of the chamber 3 via an insulator 9.
The substrate 1 is supported so as to be vertically movable and rotatable, and the substrate 1 is placed on the upper surface thereof.
【００１４】上部電極８は、チャンバー３の天壁に絶縁
体１１を介して挿入された支軸１２により吊り下げられ
ており、高周波電源１３が接続されている。The upper electrode 8 is suspended by a support shaft 12 inserted into the top wall of the chamber 3 via an insulator 11, and is connected to a high frequency power supply 13.
【００１５】上記上部電極８と、支軸１２の内部には、
ガス供給路１４が設けられている。上部電極８の下面に
は、基板１に向けて反応ガスが吹出すように、その中心
から放射状に多数個の反応ガス噴出口１５が設けられ、
図２に示すように、上記放射状の多数個の反応ガス噴出
口１５は、左右にずれた位置に２組並んで形成されてい
る。In the upper electrode 8 and the support shaft 12,
A gas supply path 14 is provided. On the lower surface of the upper electrode 8, a number of reaction gas outlets 15 are provided radially from the center so that the reaction gas blows out toward the substrate 1.
As shown in FIG. 2, the radially large number of reaction gas outlets 15 are formed side by side at two positions offset from each other.
【００１６】上記各反応ガス噴出口１５の径は、約１ｍ
ｍである。また、各組ごとの反応ガス噴出口１５におけ
る左右の間隔は、５０〜１５０ｍｍ程度に形成されてい
る。The diameter of each reaction gas outlet 15 is about 1 m.
m. The distance between the left and right sides of the reaction gas outlet 15 for each pair is formed to be about 50 to 150 mm.
【００１７】上記上部電極８の下面の内側には、一方の
組の反応ガス噴出口１５の全てを遮蔽し、他方の組の反
応ガス噴出口１５を開放する噴出口遮蔽手段１６が設け
られ、この噴出口遮蔽手段１６によって、組ごとの反応
ガス噴出口１５を開放状態と遮蔽状態に切り替えること
ができるようにしている。Inside the lower surface of the upper electrode 8, there is provided an outlet shielding means 16 for shielding all of one set of reaction gas outlets 15 and opening the other set of reaction gas outlets 15. By the jet port shielding means 16, the reaction gas jet port 15 for each set can be switched between the open state and the shielded state.
【００１８】上記噴出口遮蔽手段１６は、図３に示すよ
うに縦方向に並ぶ各組の反応ガス噴出口１５を塞ぐよう
に、所定間隔で設けられた複数枚の遮蔽板１７と、この
複数枚の遮蔽板１７を左右方向に移動させて、組ごとの
反応ガス噴出口１５を開放状態と遮蔽状態に切り替える
駆動機構１８とからなる。駆動機構１８は、チャンバー
３外に引き出されたクランク棒１９と、このクランク棒
１９と上部電極８内の遮蔽板１７とを接続する接続棒２
０とからなり、クランク棒１９をチャンバー３外から回
転させることによって、遮蔽板１７を上部電極８内で左
右に移動させることができるようにしている。As shown in FIG. 3, the outlet shielding means 16 comprises a plurality of shielding plates 17 provided at a predetermined interval so as to close each set of reaction gas outlets 15 arranged in the vertical direction. A driving mechanism 18 is configured to move the shielding plates 17 in the left-right direction to switch the reaction gas outlets 15 for each set between an open state and a shielded state. The driving mechanism 18 includes a crank rod 19 drawn out of the chamber 3 and a connecting rod 2 connecting the crank rod 19 and the shielding plate 17 in the upper electrode 8.
The shield plate 17 can be moved left and right within the upper electrode 8 by rotating the crank rod 19 from outside the chamber 3.
【００１９】上記遮蔽板１７と上部電極８の下面の接触
面には、密閉性と滑り性を良好にするために、フッ素樹
脂コーティング処理等を施しておくことが好ましい。The contact surface between the shielding plate 17 and the lower surface of the upper electrode 8 is preferably subjected to a fluororesin coating treatment or the like in order to improve the sealing property and the sliding property.
【００２０】このように、図１に示す半導体薄膜形成装
置には、２組の反応ガス噴出口１５を有し、噴出口遮蔽
手段１６により、２組の反応ガス噴出口１５を各組ごと
に切り替えて開放させることができる。As described above, the semiconductor thin film forming apparatus shown in FIG. 1 has two sets of reaction gas outlets 15, and two sets of reaction gas outlets 15 are provided for each set by the outlet shielding means 16. Can be switched to open.
【００２１】したがって、１組目の反応ガス噴出口１５
が目詰まりする時期になると、クランク棒１９を回転さ
せて遮蔽板１７によって、一組目の反応ガス噴出口１５
を遮蔽し、２組目の反応ガス噴出口１５を開放すること
により、少なくとも、メンテナンス周期を２倍にするこ
とができる。Therefore, the first set of reaction gas outlets 15
When it is time to clog, the crank rod 19 is rotated and the shielding plate 17 is used to rotate the first set of reaction gas outlets 15.
, And opening the second set of reaction gas outlets 15 can at least double the maintenance cycle.
【００２２】上記した実施形態においては、組ごとの反
応ガス噴出口１５を開放状態と遮蔽状態に切り替える駆
動機構１８として、チャンバー３外に引き出されたクラ
ンク棒１９と接続棒２０とで構成したが、駆動機構１８
はこれに限らず、カム機構を用いたものなど他の機構の
ものでも良い。In the above-described embodiment, the drive mechanism 18 for switching the reaction gas outlet 15 of each set between the open state and the shielded state is constituted by the crank rod 19 and the connection rod 20 drawn out of the chamber 3. , Drive mechanism 18
However, the present invention is not limited to this, and another mechanism such as one using a cam mechanism may be used.
【００２３】[0023]
【発明の効果】以上説明したように、この発明に係る半
導体薄膜形成装置は、電極に、複数組の反応ガス噴出口
を設け、各組ごとの反応ガス噴出口を切り替えて使用す
ることができるので、反応ガス噴出口の組数分だけメン
テナンス周期を長くすることができ、長時間に亘って、
均一な膜形成を行えるという効果がある。As described above, in the semiconductor thin film forming apparatus according to the present invention, a plurality of sets of reaction gas outlets are provided on the electrodes, and the reaction gas outlets for each set can be switched and used. Therefore, the maintenance cycle can be extended by the number of sets of the reaction gas outlets, and over a long period of time,
There is an effect that a uniform film can be formed.
【図１】この発明に係る半導体薄膜形成装置の一形態を
示す概略構成図FIG. 1 is a schematic configuration diagram showing one embodiment of a semiconductor thin film forming apparatus according to the present invention.
【図２】２組の反応ガス噴出口を設けた電極下面の平面
図FIG. 2 is a plan view of the lower surface of an electrode provided with two sets of reaction gas outlets.
【図３】（ａ）は、電極下面と、遮蔽板及び駆動機構の
関係を示す平面図、（ｂ）は、（ａ）の側面図3A is a plan view showing a relationship between an electrode lower surface, a shield plate and a driving mechanism, and FIG. 3B is a side view of FIG.
１ 基板 ２ 反応室 ３ チャンバー ４ 搬入口 ５ 搬出口 ６ 排気口 ７ 下部電極 ８ 上部電極 ９ 絶縁体 １０ 支軸 １１ 絶縁体 １２ 支軸 １３ 高周波電源 １４ ガス供給路 １５ 反応ガス噴出口 １６ 噴出口遮蔽手段 １７ 遮蔽板 １８ 駆動機構 １９ クランク棒 ２０ 接続棒 DESCRIPTION OF SYMBOLS 1 Substrate 2 Reaction chamber 3 Chamber 4 Carry-in port 5 Carry-out port 6 Exhaust port 7 Lower electrode 8 Upper electrode 9 Insulator 10 Support shaft 11 Insulator 12 Support shaft 13 High-frequency power supply 14 Gas supply path 15 Reaction gas outlet 16 Spout outlet shielding Means 17 Shielding plate 18 Drive mechanism 19 Crank rod 20 Connection rod
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 BA30 CA06 EA04 FA03 KA17 LA15 5F045 AA08 AB04 BB10 DP03 EF09 EF18 EH13 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 BA30 CA06 EA04 FA03 KA17 LA15 5F045 AA08 AB04 BB10 DP03 EF09 EF18 EH13
Claims (2)
噴出口を形成した半導体薄膜形成装置において、上記複
数個の反応ガス噴出口を複数組設け、この複数組の反応
ガス噴出口を、各組ごとに選択的に遮蔽開放する噴出口
遮蔽手段を設けたことを特徴とする半導体薄膜形成装
置。In a semiconductor thin film forming apparatus in which a plurality of reactive gas jets are formed on one of a pair of electrodes, a plurality of sets of the plurality of reactive gas jets are provided. A semiconductor thin film forming apparatus, wherein a jet port shielding means for selectively shielding and opening each set is provided.
噴出口を塞ぐように、所定間隔で設けられた複数枚の遮
蔽板と、この複数枚の遮蔽板を移動させて、組ごとの反
応ガス噴出口を開放状態と遮蔽状態に切り替える駆動機
構とによって構成したことを特徴とする請求項１記載の
半導体薄膜形成装置。2. A plurality of shield plates provided at a predetermined interval so as to cover each set of reaction gas outlets, and the plurality of shield plates are moved so as to cover each set of reactant gas outlets. 2. The semiconductor thin film forming apparatus according to claim 1, comprising a drive mechanism for switching the reactive gas jet port between an open state and a shielded state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000091282A JP3792473B2 (en) | 2000-03-29 | 2000-03-29 | Method for forming semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000091282A JP3792473B2 (en) | 2000-03-29 | 2000-03-29 | Method for forming semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001284255A true JP2001284255A (en) | 2001-10-12 |
| JP3792473B2 JP3792473B2 (en) | 2006-07-05 |
Family
ID=18606760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000091282A Expired - Lifetime JP3792473B2 (en) | 2000-03-29 | 2000-03-29 | Method for forming semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3792473B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010084157A (en) * | 2008-09-29 | 2010-04-15 | Tokyo Electron Ltd | Gas introduction mechanism and film deposition system |
| JP2021077755A (en) * | 2019-11-07 | 2021-05-20 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
-
2000
- 2000-03-29 JP JP2000091282A patent/JP3792473B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010084157A (en) * | 2008-09-29 | 2010-04-15 | Tokyo Electron Ltd | Gas introduction mechanism and film deposition system |
| JP2021077755A (en) * | 2019-11-07 | 2021-05-20 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP7296855B2 (en) | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN114059043B (en) * | 2021-11-19 | 2023-10-03 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3792473B2 (en) | 2006-07-05 |
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