JP2001281426A - Ultraviolet ray reflection plate - Google Patents

Ultraviolet ray reflection plate

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Publication number
JP2001281426A
JP2001281426A JP2000098865A JP2000098865A JP2001281426A JP 2001281426 A JP2001281426 A JP 2001281426A JP 2000098865 A JP2000098865 A JP 2000098865A JP 2000098865 A JP2000098865 A JP 2000098865A JP 2001281426 A JP2001281426 A JP 2001281426A
Authority
JP
Japan
Prior art keywords
plane
ultraviolet
ratio
ultraviolet ray
reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000098865A
Other languages
Japanese (ja)
Inventor
Katsura Kajiwara
桂 梶原
Yasuaki Sugizaki
康昭 杉崎
Yuichi Seki
勇一 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP2000098865A priority Critical patent/JP2001281426A/en
Publication of JP2001281426A publication Critical patent/JP2001281426A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an ultraviolet ray reflection plate surely exhibiting ultraviolet ray reflectance higher than that exhibited with any conventional ultraviolet ray reflection plate. SOLUTION: The ultraviolet ray reflection plate is provided with >=99 mass % aluminum purity and is characterized by having >=1.0 X-ray diffraction intensity ratio corresponding to the lattice plane pair (220)/(200) or (111)/(200). Also to maintain >=99 mass % aluminum purity and >=30% ratio of the summed (110) plane and (111) plane areas to the total surface area of the plate are desirable for heightening the ultraviolet ray reflectance. Consequently it is more desirable to maintain >=99 mass % aluminum purity, >=1.0 X-ray diffraction intensity ratio corresponding to the lattice plane pair (220)/(200) or (111)/(200) and >=30% ratio of the summed (110) plane and (111) plane areas to the total surface area of the plate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は紫外線反射板に関
し、詳細には殺菌ランプを有する食品用器具や医療用器
具、又は殺菌灯や殺虫灯などの殺菌装置に用いられ、或
いは各種のレーザーの反射板や、浄水装置などの反射板
として好適な紫外線反射板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet reflecting plate, and more particularly to a food or medical appliance having a germicidal lamp, or a germicidal device such as a germicidal lamp or an insecticidal lamp, or a laser reflecting device. The present invention relates to an ultraviolet reflecting plate suitable as a plate or a reflecting plate for a water purification device.

【0002】[0002]

【従来の技術】殺菌灯や殺虫灯などの紫外線反射板に
は、蒸着膜や多層膜によるコーティングガラスや金めっ
き板などがあり、上記反射板の基板の素材としてはアル
ミニウムが従来より用いられており、その素材によって
は反射率が低いものがあったりして製品の反射率がばら
ついており、確実に高い反射率を発揮する反射板が得ら
れないといった問題があった。
2. Description of the Related Art Ultraviolet reflectors such as germicidal lamps and insecticidal lamps include coated glass or gold-plated plates with a vapor-deposited film or a multilayer film, and aluminum is conventionally used as a material of the substrate of the reflector. Also, depending on the material, there is a problem that the reflectance of the product varies due to the low reflectance of some materials, and it is not possible to obtain a reflecting plate that reliably exhibits a high reflectance.

【0003】[0003]

【発明が解決しようとする課題】本発明は上記事情に着
目してなされたものであって、従来の紫外線反射板より
も高い紫外線反射率を確実に発揮する紫外線反射板を提
供しようとするものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an ultraviolet reflector which reliably exhibits a higher ultraviolet reflectance than a conventional ultraviolet reflector. It is.

【0004】[0004]

【課題を解決するための手段】上記課題を解決した本発
明に係る紫外線反射板とは、アルミニウムの純度が99
質量%以上であり、X線回折強度比で(220)面/
(200)面の比及び(111)面/(200)面の比
のいずれか一方または両方が1.0以上であることを要
旨とするものである。またアルミニウムの純度が99質
量%以上とし、板表面における(110)面及び(11
1)面の合計面積率を30%以上とすることも紫外線反
射率を高める上で望ましく、従ってアルミニウムの純度
を99質量%以上とし、X線回折強度比で(220)面
/(200)面の比及び/又は(111)面/(20
0)面の比を1.0以上とし、且つ板表面における(1
10)面及び(111)面の合計面積率を30%以上と
すればより望ましい。
The ultraviolet reflecting plate according to the present invention, which has solved the above-mentioned problems, has a purity of aluminum of 99%.
% Or more, and the (220) plane /
The gist is that one or both of the ratio of the (200) plane and the ratio of the (111) plane / (200) plane are 1.0 or more. Further, the purity of aluminum is 99% by mass or more, and the (110) plane and (11)
1) It is also desirable to increase the total area ratio of the planes to 30% or more in order to increase the ultraviolet reflectance. Therefore, the purity of aluminum is set to 99% by mass or more, and the (220) plane / (200) plane in the X-ray diffraction intensity ratio. Ratio and / or (111) plane / (20
0) The ratio of the plane is 1.0 or more, and (1)
It is more desirable that the total area ratio of the (10) plane and the (111) plane be 30% or more.

【0005】尚、表面の中心線平均粗さ(Ra)は3μ
m以下とすることが望ましく、また陽極酸化皮膜は3μm
以下の厚さで形成することが望ましい。
The center line average roughness (Ra) of the surface is 3 μm.
m or less, and the anodic oxide film is 3 μm
It is desirable to form with the following thickness.

【0006】ところで、アルミニウム合金板に形成され
る集合組織としては、主要なものとして下記のCube
方位,Goss方位,Brass方位,Copper方
位,S方位等と呼ばれる集合組織があり、夫々に応じた
結晶面が存在する。尚、結晶面は板面上面の方位であ
り、方位は圧延方向の結晶方向である。 Cube方位 {001}<100> Goss方位 {011}<100> Brass方位 {011}<100> Copper方位 {112}<111> S方位 {123}<634>
[0006] By the way, the following textures are mainly formed in the texture formed on the aluminum alloy plate.
There are textures called orientations, Goss orientations, Brass orientations, Copper orientations, S orientations, and the like, and there are crystal planes corresponding to the textures. The crystal plane is the direction of the upper surface of the plate surface, and the direction is the crystal direction in the rolling direction. Cube orientation {001} <100> Goss orientation {011} <100> Brass orientation {011} <100> Copper orientation {112} <111> S orientation {123} <634>

【0007】尚、これら以外の残りは、各方位間の連続
的な方位であるか、或いはランダム方位である。また、
本発明では、基本的にこれらの結晶面から±20°以内
の方位のずれは同一の結晶面に属するものとする。
[0007] The rest other than these are continuous orientations between the respective orientations or random orientations. Also,
In the present invention, it is basically assumed that the deviation of the orientation within ± 20 ° from these crystal planes belongs to the same crystal plane.

【0008】本発明における結晶方位の強度比は、X線
回折法により各結晶面の強度を測定することにより求め
ることができる。また、方位分布密度による評価[Orie
ntation Density:通常のX線回折法を用いて、(100),
(110),(111)の完全極点図(Pole Figure)を測定し、結
晶方位分布関数(ODF;Orientation DistributionF
unction)を用いて、各方位の強度ピークの割合を計算
する方法]によっても結晶方位の強度比を求めることが
できる。或いは、TEMによる電子線回折法又はSEM
−ECP(Electron Channeling Pattern)法、SEM
−EBSP(Electron Back Scattering Pattern)法
などを用いて測定したデータに基づいて結晶方位分布関
数を用いて結晶方位強度比を求めてもよい。
The intensity ratio of the crystal orientation in the present invention can be determined by measuring the intensity of each crystal plane by an X-ray diffraction method. In addition, evaluation by orientation distribution density [Orie
ntation Density: (100),
Pole figures of (110) and (111) were measured, and the crystal orientation distribution function (ODF; Orientation DistributionF) was measured.
Calculating the ratio of intensity peaks in each direction using unction)]. Alternatively, TEM electron diffraction or SEM
-ECP (Electron Channeling Pattern) method, SEM
The crystal orientation intensity ratio may be obtained using a crystal orientation distribution function based on data measured using an EBSP (Electron Back Scattering Pattern) method or the like.

【0009】[0009]

【発明の実施の形態】本発明者らは、アルミニウム合金
製基板の特性と紫外線反射率の関係について鋭意研究を
重ねる中で、集合組織を種々に変化させて紫外線反射率
を調査したところ、紫外線の反射率を確実に向上させる
ためには、集合組織の特定の方位を発達させることが非
常に有効な手段であるとの知見を得た。換言すれば、板
面の結晶面の種類によって、紫外線の反射率は異なるも
のであり、具体的には(111)面>(110)面>
(100)面の順に紫外線反射率が高いことを突き止
め、本発明に想到した。
BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies on the relationship between the characteristics of an aluminum alloy substrate and ultraviolet reflectance, and have investigated the ultraviolet reflectance by changing the texture in various ways. It has been found that in order to surely improve the reflectivity of the crystal, it is very effective to develop a specific orientation of the texture. In other words, the reflectance of ultraviolet rays differs depending on the type of the crystal plane of the plate surface. Specifically, the (111) plane> (110) plane>
The inventors found that the ultraviolet reflectance was higher in the order of the (100) plane, and reached the present invention.

【0010】尚、アルミニウムを採用することで短波長
側における反射率が高まり、アルミニウムの純度を向上
させることで紫外線の反射率を高めることができるが、
アルミニウム純度が99%より低い場合には、相対的に
他元素の添加量が多くなることから同じ結晶面であった
としても格子歪みが大きくなり、また他元素や結晶格子
面による紫外線波長のエネルギー吸収が大きくなること
から紫外線反射率が低下する。また材料中に金属間化合
物量が多くなり、それらが紫外線波長域の反射率を著し
く低下させる。従って、アルミニウムの純度は99質量
%以上とすることが必要であり、99.5%以上である
ことがより望ましい。
The reflectance on the short wavelength side is increased by employing aluminum, and the reflectance of ultraviolet rays can be increased by improving the purity of aluminum.
When the aluminum purity is lower than 99%, the amount of addition of other elements is relatively large, so that even if the crystal plane is the same, the lattice distortion becomes large. As the absorption increases, the ultraviolet reflectance decreases. Also, the amount of intermetallic compounds in the material increases, which significantly reduces the reflectance in the ultraviolet wavelength region. Therefore, the purity of aluminum needs to be 99% by mass or more, and more preferably 99.5% or more.

【0011】紫外線の反射率は、各結晶面の電子密度状
態の違いにより異なるものであり、紫外線反射率は(1
11)面>(110)面>(100)面の順となる。従
って、高い紫外線反射率を得るには、(111)面や
(110)面の割合を発達させることが極めて有効であ
り、換言すれば(220)面/(200)面のX線強度
比を1.0以上とするか、或いは(111)面/(20
0)面のX線強度比を1以上とすることが重要である
[尚、アルミニウムのX線回折では、220)面のX線
強度が結晶方位(110)面の強度を示し、(200)
面のX線強度が結晶方位(100)面の強度を示す]。
The reflectivity of ultraviolet rays differs depending on the electron density state of each crystal plane.
11) plane> (110) plane> (100) plane. Therefore, in order to obtain a high ultraviolet reflectance, it is extremely effective to develop the ratio of the (111) plane and the (110) plane. In other words, the X-ray intensity ratio of the (220) plane / (200) plane is reduced. 1.0 or more, or (111) plane / (20
It is important that the X-ray intensity ratio of the 0) plane is 1 or more. [In the X-ray diffraction of aluminum, the X-ray intensity of the 220) plane indicates the intensity of the crystal orientation (110) plane, and the (200)
The X-ray intensity of the plane indicates the intensity of the (100) plane.]

【0012】また、紫外線反射率を高める上では、(1
11)面を優先させることが好ましいが、(111)面
より(110)面を発達させることの方が制御しやす
く、製造上のコストメリットが大きい。
In order to increase the ultraviolet reflectance, (1)
It is preferable to give priority to the 11) plane, but it is easier to control the development of the (110) plane than to the (111) plane, and there is a great cost advantage in manufacturing.

【0013】板表面に出ている結晶方位の面積率を制御
することも、紫外線反射率を向上させる上で非常に有効
であり、SEM−EBSP法などで測定した表面結晶面
の(110)面及び(111)面の合計面積率を30%
以上とすることが望ましい。尚、ここでも、これらの結
晶面から±20°以内の方位のずれは同一の結晶面に属
するものとする。上記面積率が30%未満であると十分
に高い紫外線反射率を得ることができない。上記面積率
は、35%以上であるとより好ましく、50%以上であ
ると更に好ましい。
Controlling the area ratio of the crystal orientation on the plate surface is also very effective in improving the ultraviolet reflectance. The (110) plane of the surface crystal plane measured by the SEM-EBSP method or the like is also effective. And the total area ratio of the (111) plane is 30%
It is desirable to make the above. Note that, here, it is assumed that the deviation of the orientation within ± 20 ° from these crystal planes belongs to the same crystal plane. If the area ratio is less than 30%, a sufficiently high ultraviolet reflectance cannot be obtained. The area ratio is more preferably 35% or more, and further preferably 50% or more.

【0014】表面粗さは、大きくなり過ぎると紫外線反
射率の低下をもたらすので、中心線平均粗さ(Ra)で
3μm以下とすることが望ましく、2.5μm以下とすれ
ばより望ましく、1.5μm以下とすれば更に望まし
い。表面粗さは、ロール面粗度の制御と潤滑方法の選択
により調整することができる。
If the surface roughness is too large, the ultraviolet reflectance is lowered. Therefore, the center line average roughness (Ra) is preferably 3 μm or less, and more preferably 2.5 μm or less. It is more desirable that the thickness be 5 μm or less. The surface roughness can be adjusted by controlling the roll surface roughness and selecting a lubrication method.

【0015】アルミ合金板材は、基材表面を腐食環境か
らの保護を目的として陽極酸化処理が施される場合もあ
るが、陽極酸化皮膜の膜厚が厚いと陽極酸化皮膜中での
紫外線のエネルギー吸収が起こり、反射率を低下させ
る。従って、陽極酸化皮膜の膜厚は3μm以下とするこ
とが好ましく、2.8μm以下とすることがより好まし
く、2.0以上であると更に好ましい。
Aluminum alloy sheet materials are sometimes subjected to anodizing treatment for the purpose of protecting the surface of the base material from a corrosive environment. However, if the thickness of the anodized film is large, the energy of ultraviolet light in the anodized film may be reduced. Absorption occurs, reducing the reflectivity. Therefore, the thickness of the anodic oxide film is preferably 3 μm or less, more preferably 2.8 μm or less, and even more preferably 2.0 or more.

【0016】尚、結晶方位の制御は、アルミニウム合金
板の持つ集合組織形成の特徴を利用することで可能であ
り、通常のアルミニウム合金板の場合、主として、Cube
方位[001]<100>,Goss方位[011]<100>,Brass方位[011]
<211>,Copper方位[112]<111>(若しくはD方位[4411]<1
1118>),S方位[123]<634>といった方位を精緻に制御す
ることで達成できる。
Incidentally, the crystal orientation can be controlled by utilizing the feature of the texture formation of the aluminum alloy plate. In the case of a normal aluminum alloy plate, Cube is mainly used.
Direction [001] <100>, Goss direction [011] <100>, Brass direction [011]
<211>, Copper direction [112] <111> (or D direction [4411] <1
1118>) and S azimuth [123] <634>.

【0017】本発明に係る紫外線反射板は、具体的には
次のようにして製造することができる。
The ultraviolet reflector according to the present invention can be specifically manufactured as follows.

【0018】原料となるアルミニウム鋳塊を製造するに
あたっては、通常の半連続鋳造法(DC鋳造)や連続鋳造
法を採用すれば良く、その後、均質化処理して熱間圧延
すればよい。この均質化処理は、面削後に熱延前の加熱
を兼ねて行ってもよいし、熱延の加熱前に均質化処理と
して別に行ってもよい。尚、予め均質化処理を行い、そ
の後表面不均一層を面削りし、再加熱してから熱延を行
う手順を採用すると、圧延前における鋳塊表面の酸化皮
膜が少なくなるので、紫外線反射率の劣化を防ぐことが
でき望ましい。
In producing an aluminum ingot as a raw material, a normal semi-continuous casting method (DC casting) or a continuous casting method may be employed, and thereafter, a homogenizing treatment and hot rolling may be performed. This homogenization treatment may be performed also after the surface grinding and before the hot rolling, or may be separately performed as the homogenization treatment before the heating of the hot rolling. In addition, if a procedure in which the homogenization treatment is performed in advance, the surface non-uniform layer is chamfered, re-heated, and then hot-rolled is adopted, the oxide film on the surface of the ingot before rolling is reduced. Is preferable because it can prevent the deterioration of the metal.

【0019】熱間圧延は、450〜600℃の開始温度
で行い、再結晶化及び結晶粒微細化を行い、(100)
面で粗大粒が形成されることを抑制することが推奨され
る。450℃未満では、再結晶組織が十分に生じず、粗
大な(100)面粒が生成し、また板内の結晶方位のバ
ラツキが生じる。一方、600℃を超えると表面に焼き
付きが生じ、好ましくない。尚、熱延の終了温度は、上
記開始温度を規定すれば、十分な再結晶化が生じるの
で、特別の制御を要するものではないが、通常、約20
0〜350℃の範囲である。
The hot rolling is performed at a starting temperature of 450 to 600 ° C. to perform recrystallization and grain refinement.
It is recommended to suppress the formation of coarse grains on the surface. If the temperature is lower than 450 ° C., the recrystallized structure is not sufficiently formed, coarse (100) plane grains are generated, and the crystal orientation in the plate is varied. On the other hand, when the temperature exceeds 600 ° C., the surface is burned, which is not preferable. The end temperature of hot rolling is not required to be specially controlled since sufficient recrystallization occurs if the above-mentioned starting temperature is specified.
The range is from 0 to 350 ° C.

【0020】上記のような再結晶化や結晶粒微細化の効
果を発揮させる上で、熱延での総圧下率は70%以上と
することが望ましい。総圧下率が70%未満では、熱延
中に十分な再結晶化が起こらないので、(100)面の
粗大粒が生成してしまう。上記総圧下率は80%以上で
あると望ましく、90%以上であると更に好ましい。
In order to exert the effects of the recrystallization and the refinement of the crystal grains as described above, the total rolling reduction in hot rolling is desirably 70% or more. If the total rolling reduction is less than 70%, since sufficient recrystallization does not occur during hot rolling, coarse grains of the (100) plane are generated. The total draft is preferably 80% or more, and more preferably 90% or more.

【0021】その後、(110)面および(111)面
を発達させる上で、30%以上の圧下率で冷間圧延を行
い、要求される板厚まで圧延を行えばよい。冷延率で3
0%未満では、Brass方位,Copper方位,S
方位が十分に発達せず、(110)面及び(111)面
の強度が十分に得られない。冷延率は、50%以上であ
るとより好ましく、80%以上であると更に好ましい。
Thereafter, in order to develop the (110) plane and the (111) plane, cold rolling is performed at a rolling reduction of 30% or more, and rolling may be performed to a required sheet thickness. 3 in cold rolling rate
If it is less than 0%, Brass direction, Copper direction, S
The orientation is not sufficiently developed, and the strength of the (110) plane and the (111) plane cannot be sufficiently obtained. The cold rolling reduction is more preferably 50% or more, and further preferably 80% or more.

【0022】尚、冷延の途中で(110)面及び(11
1)面の発達を促進する結晶粒微細化の目的で中間焼鈍
を入れることは効果的である。これに対し、製品厚を得
た後での最終焼鈍は、(100)面が強くなり、紫外線
反射率を低下させるだけでなく、酸化膜による反射率低
下や板および箔強度も低下し、表面疵も付き易くなるの
で好ましくない。
During the cold rolling, the (110) plane and the (11) plane
1) It is effective to perform intermediate annealing for the purpose of crystal grain refinement that promotes the development of the surface. On the other hand, in the final annealing after obtaining the product thickness, the (100) plane is strengthened, and not only the ultraviolet reflectance is reduced, but also the reflectance reduction due to the oxide film and the plate and foil strength are reduced. It is not preferable because flaws are easily formed.

【0023】但し、要求品質によって、最終板での焼鈍
工程が必要とされる場合には、低温で焼鈍することが好
ましい。望ましい温度範囲は、200〜350℃であ
り、保持時間は2〜30時間である。この条件により、
(100)面の発達は抑え、B方位やS方位といった
(110)面及び(111)面強度に寄与する方位の再
結晶粒が発達する。一方、400℃程度以上の高温焼鈍
条件で行うと(100)面方位粒が発達し成長するた
め、紫外線反射率を低下させるので好ましくない。
However, if the required quality requires an annealing step on the final sheet, it is preferable to perform annealing at a low temperature. A desirable temperature range is 200 to 350 ° C., and a holding time is 2 to 30 hours. With this condition,
The growth of the (100) plane is suppressed, and the recrystallized grains having the directions contributing to the (110) plane and the (111) plane strength, such as the B and S directions, develop. On the other hand, if the annealing is performed under a high-temperature annealing condition of about 400 ° C. or more, the (100) plane orientation grains develop and grow, which lowers the ultraviolet reflectance.

【0024】尚、(100)面や(111)面をもつ単
結晶を作製し、板状に切断(スライス)することで、高
い紫外線反射率を有する紫外線反射板を得ることができ
る。しかしながら、比較的広い面積をもつ反射板を製造
する場合には、実際の製造に莫大なコストがかかるため
採用することは困難である。
By preparing a single crystal having a (100) plane or a (111) plane and cutting (slicing) it into a plate, an ultraviolet reflector having a high ultraviolet reflectance can be obtained. However, in the case of manufacturing a reflector having a relatively large area, it is difficult to adopt it because of the enormous cost involved in actual manufacturing.

【0025】以下、本発明を実施例によって更に詳細に
説明するが、下記実施例は本発明を限定する性質のもの
ではなく、前・後記の主旨に徴して設計変更することは
いずれも本発明の技術的範囲内に含まれるものである。
Hereinafter, the present invention will be described in more detail with reference to examples. However, the following examples do not limit the present invention, and any design change based on the above and following gist is not limited to the present invention. Are included within the technical scope of

【0026】[0026]

【実施例】表1の組成をもつアルミニウム合金を通常の
DC鋳造により、厚さ500mm,幅1500mmの鋳
塊を鋳造した。その後、均質化処理後に面削(または面
削後に均質化処理)を施し、熱間加工するため加熱また
は炉冷して熱間加工及び冷間加工を施すことにより作製
した板厚0.1mmの板材を用いて紫外線反射特性の評
価を行った。
EXAMPLE An ingot having a thickness of 500 mm and a width of 1500 mm was cast from an aluminum alloy having the composition shown in Table 1 by ordinary DC casting. Then, after the homogenization treatment, the surface is cut (or homogenized after the surface treatment), and the thickness of the sheet is 0.1 mm, which is manufactured by heating or furnace-cooling to perform hot working and cold working for hot working. The evaluation of the ultraviolet reflection characteristics was performed using the plate material.

【0027】各板材の結晶方位のX線強度比は、冷延率
や最終焼鈍条件などを変化させることにより制御した。
尚、表1中No.5の低温焼鈍は250℃で10時間保
持することで行い、No.6の焼鈍−冷延は、230℃
で10時間保持した後30%の圧下率で冷間圧延を行
い、No.10,11の高温焼鈍は、550℃で4時間
保持することで行った。
The X-ray intensity ratio of the crystal orientation of each sheet material was controlled by changing the cold rolling ratio and the final annealing conditions.
In Table 1, No. The low-temperature annealing of No. 5 was performed by holding at 250 ° C. for 10 hours. Annealing-cold rolling of No. 6 is 230 ° C
, And cold-rolled at a rolling reduction of 30%. High-temperature annealing of 10, 11 was performed by holding at 550 ° C. for 4 hours.

【0028】各試料表面は、脱脂,水洗などにより、表
面潤滑油を除去した後、脱脂,水洗,苛性エッチング,
水洗,中和,水洗,硫酸による陽極酸化,水洗,湯洗,
封孔および乾燥により陽極酸化皮膜処理を行った。また
一部試料については、電解研磨を行い陽極酸化皮膜を除
去した。
After removing the surface lubricating oil from the surface of each sample by degreasing, washing with water, etc., degreasing, washing with water, caustic etching,
Water washing, neutralization, water washing, anodic oxidation with sulfuric acid, water washing, hot water washing,
Anodized film treatment was performed by sealing and drying. Some of the samples were subjected to electrolytic polishing to remove the anodized film.

【0029】X線回折強度については、リガク製X線回
折装置を用いて、(111)面,(200)面[=(1
00)面],(220)面[=(110)面]の回折強
度を測定し、それより(220)面/(200)面及び
(111)面/(200)面のX線強度比を求めた。
Regarding the X-ray diffraction intensity, a (111) plane, a (200) plane [= (1
00) plane] and (220) plane [= (110) plane], and the X-ray intensity ratios of the (220) plane / (200) plane and the (111) plane / (200) plane are calculated from the measured diffraction intensities. I asked.

【0030】板表面方位の面積率については、試料板表
面部に電解研磨を施した後、走査型電子顕微鏡(日本電
子製SEM:JSM5410)とEBSP装置(TSL
製)及び解析装置を用いて、SEM−EBSP法により
測定した。10箇所以上で、1×1mm2程度の範囲の
測定を行い、結晶面(011)および(111)面をそ
れぞれ解析して、画像解析により各方位の面積率を求
め、(110)面及び(111)面の合計面積率を算出
した。ここで、これらの結晶面から±20°以内の方位
のずれは同一の結晶面に属するものとした。
Regarding the area ratio of the plate surface orientation, the surface of the sample plate was electropolished and then subjected to a scanning electron microscope (JEOL SEM: JSM5410) and an EBSP device (TSL).
And the analysis apparatus, and measured by the SEM-EBSP method. At 10 or more locations, measurement in the range of about 1 × 1 mm 2 is performed, and the crystal planes (011) and (111) planes are each analyzed, and the area ratio of each orientation is obtained by image analysis, and the (110) plane and ( The total area ratio of the (111) plane was calculated. Here, deviations of the orientation within ± 20 ° from these crystal planes belong to the same crystal plane.

【0031】紫外線反射率は、磁気分光光度計(島津製
作所製 UV−240)を用いて、積分球を用いて鏡面
反射率スペクトル測定により光源の入射角は8°で行っ
た。測定は、波長200〜400nmの紫外線で行い、
結果は、波長253.7nm(殺菌線波長)及び350
nm(ブラックライト波長域)での反射率(%)により
評価した。
The ultraviolet reflectance was measured at an incident angle of the light source of 8 ° by measuring the specular reflectance spectrum using a magnetic spectrophotometer (UV-240 manufactured by Shimadzu Corporation) using an integrating sphere. The measurement is performed with ultraviolet light having a wavelength of 200 to 400 nm,
The results were 253.7 nm (germicidal wavelength) and 350
It was evaluated by the reflectance (%) in nm (black light wavelength range).

【0032】結果は、表1に示す。The results are shown in Table 1.

【0033】[0033]

【表1】 [Table 1]

【0034】No.1〜9は、本発明に係る反射板であ
り、殺菌線及びブラックライトのいずれに関しても非常
に高い紫外線反射率を示した。
No. Reference numerals 1 to 9 denote the reflection plates according to the present invention, and exhibited extremely high ultraviolet reflectances with respect to both the sterilizing line and the black light.

【0035】これに対してNo.10〜15は、本発明
に係るいずれかの条件を満足しない場合の比較例であ
り、本発明例ほど高い紫外線反射率は得られなかった。
On the other hand, no. Nos. 10 to 15 are comparative examples in which one of the conditions according to the present invention is not satisfied, and a higher ultraviolet reflectance than the inventive examples was not obtained.

【0036】[0036]

【発明の効果】本発明は以上の様に構成されているの
で、 本発明は上記事情に着目してなされたものであっ
て、従来の紫外線反射板よりも高い紫外線反射率を確実
に発揮する紫外線反射板が提供できることとなった。
Since the present invention is configured as described above, the present invention has been made in view of the above circumstances, and reliably exhibits a higher ultraviolet reflectance than a conventional ultraviolet reflector. An ultraviolet reflector can be provided.

フロントページの続き (72)発明者 関 勇一 神戸市西区高塚台1丁目5番5号 株式会 社神戸製鋼所神戸総合技術研究所内 Fターム(参考) 2H042 DA02 DA10 DB02 DC00 DE00 DE07 2H048 FA05 FA07 FA09 FA18 Continuation of the front page (72) Inventor Yuichi Seki 1-5-5 Takatsukadai, Nishi-ku, Kobe F-term in Kobe Steel Research Institute, Kobe Research Institute Co., Ltd. 2H042 DA02 DA10 DB02 DC00 DE00 DE07 2H048 FA05 FA07 FA09 FA18

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 アルミニウムの純度が99質量%以上で
あり、X線回折強度比で(220)面/(200)面の
比及び(111)面/(200)面の比のいずれか一方
または両方が1.0以上であることを特徴とする紫外線
反射板。
1. The method according to claim 1, wherein the purity of the aluminum is 99% by mass or more, and either one of a ratio of (220) plane / (200) plane and a ratio of (111) plane / (200) plane in X-ray diffraction intensity ratio or An ultraviolet reflector, wherein both are 1.0 or more.
【請求項2】 アルミニウムの純度が99質量%以上で
あり、板表面における(110)面及び(111)面の
合計面積率が30%以上であることを特徴とする紫外線
反射板。
2. An ultraviolet reflecting plate, wherein the purity of aluminum is 99% by mass or more, and the total area ratio of the (110) plane and the (111) plane on the plate surface is 30% or more.
【請求項3】 アルミニウムの純度が99質量%以上で
あると共に、X線回折強度比で(220)面/(20
0)面の比及び/または(111)面/(200)面の
比が1.0以上であり、且つ板表面における(110)
面及び(111)面の合計面積率が30%以上であるこ
とを特徴とする紫外線反射板。
3. The purity of aluminum is 99% by mass or more, and the ratio of X-ray diffraction intensity is (220) plane / (20)
0) plane ratio and / or (111) plane / (200) plane ratio is 1.0 or more, and (110) plane on the plate surface
An ultraviolet reflector, wherein the total area ratio of the plane and the (111) plane is 30% or more.
【請求項4】 表面の中心線平均粗さ(Ra)が3μm
以下である請求項1〜3のいずれかに記載の紫外線反射
板。
4. The center line average roughness (Ra) of the surface is 3 μm.
The ultraviolet reflective plate according to claim 1, wherein:
【請求項5】 陽極酸化皮膜が、3μm以下の厚さで形
成されてなる請求項1〜4のいずれかに記載の紫外線反
射板。
5. The ultraviolet reflector according to claim 1, wherein the anodic oxide film has a thickness of 3 μm or less.
JP2000098865A 2000-03-31 2000-03-31 Ultraviolet ray reflection plate Withdrawn JP2001281426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
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ID=18613297

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004245905A (en) * 2003-02-10 2004-09-02 Tadahiro Omi Mask fabricating device
US7331695B2 (en) 2003-03-03 2008-02-19 Foundation For Advancement Of International Science Visible light-reflecting member
JP2012190991A (en) * 2011-03-10 2012-10-04 Toshiba Corp Semiconductor light-emitting device
JP2015030888A (en) * 2013-08-05 2015-02-16 日本軽金属株式会社 Surface-treated aluminum material and ultraviolet reflection member using the same
JP2018118412A (en) * 2017-01-24 2018-08-02 東洋アルミニウム株式会社 Aluminum foil laminate and method for manufacturing the same
JP2019519086A (en) * 2016-06-27 2019-07-04 エデン パク イルミネーション High power ultraviolet (UV) and vacuum ultraviolet (VUV) lamps with microcavity plasma emission arrays
JP2021089896A (en) * 2021-01-20 2021-06-10 エデン パク イルミネーション Product with at least one plasma lamp

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004245905A (en) * 2003-02-10 2004-09-02 Tadahiro Omi Mask fabricating device
US7331695B2 (en) 2003-03-03 2008-02-19 Foundation For Advancement Of International Science Visible light-reflecting member
JP2012190991A (en) * 2011-03-10 2012-10-04 Toshiba Corp Semiconductor light-emitting device
JP2015030888A (en) * 2013-08-05 2015-02-16 日本軽金属株式会社 Surface-treated aluminum material and ultraviolet reflection member using the same
JP2019519086A (en) * 2016-06-27 2019-07-04 エデン パク イルミネーション High power ultraviolet (UV) and vacuum ultraviolet (VUV) lamps with microcavity plasma emission arrays
US11004673B2 (en) 2016-06-27 2021-05-11 Eden Park Illumination High-power ultraviolet (UV) and vacuum ultraviolet (VUV) lamps with micro-cavity plasma arrays
JP2018118412A (en) * 2017-01-24 2018-08-02 東洋アルミニウム株式会社 Aluminum foil laminate and method for manufacturing the same
JP2021089896A (en) * 2021-01-20 2021-06-10 エデン パク イルミネーション Product with at least one plasma lamp

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