JP2001234386A - Neutral tinning bath composition and soldering bath composition - Google Patents
Neutral tinning bath composition and soldering bath compositionInfo
- Publication number
- JP2001234386A JP2001234386A JP2000042404A JP2000042404A JP2001234386A JP 2001234386 A JP2001234386 A JP 2001234386A JP 2000042404 A JP2000042404 A JP 2000042404A JP 2000042404 A JP2000042404 A JP 2000042404A JP 2001234386 A JP2001234386 A JP 2001234386A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- bath composition
- plating
- derivative
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品としての
セラミックチップ部品等にめっき被膜を形成する際に、
部品にダメージを生ずることなく、ハンダ付け性、ハン
ダ耐熱性、ハンダ濡れ性に優れためっき被膜を形成する
ことができる中性錫めっき浴組成物及びハンダめっき浴
組成物に関する。The present invention relates to a method for forming a plating film on a ceramic chip component or the like as an electronic component.
The present invention relates to a neutral tin plating bath composition and a solder plating bath composition capable of forming a plating film having excellent solderability, solder heat resistance, and solder wettability without causing damage to parts.
【０００２】[0002]
【従来の技術】ハンダめっきは、電子部品やプリントな
どの防触やハンダ付けに利用されている。例えば多層セ
ラミック容量コンデンサを他の部品にハンダ付けするた
め、端子に設けたニッケル等のバリヤー層に錫−鉛メッ
キを行うことがなされている。2. Description of the Related Art Solder plating is used for touch protection and soldering of electronic parts and printed materials. For example, in order to solder a multilayer ceramic capacitor to another component, a tin-lead plating is performed on a barrier layer made of nickel or the like provided on a terminal.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
ハンダめっき浴は、極めて酸性が強いため、電子部品等
にダメージを与えていた。However, the conventional solder plating bath is extremely acidic, and thus damages electronic parts and the like.
【０００４】[0004]
【課題を解決するために手段】本発明は、上記に鑑み提
案されたもので、(１)無機カルボン酸２０〜４０重量
％、(２)リン酸誘導体又はその塩類０．１〜０．５重量
％、(３)無機カルボン酸の塩類１０〜２０重量％、(４)
有機イオウ化合物誘導体０．０１〜０．０５重量％、
(５)水酸化ナトリウム０．０１〜０．０５重量％、(６)
水酸化カリウム５〜２０重量％、(７)スルホン酸誘導体
又はその塩類５〜４０重量％、(８)エチレン誘導体０．
０１〜０．０５重量％、(９)錫塩類１０〜２０重量％、
(10)水２０〜５０重量％からなることを特徴とする中性
錫めっき浴組成物に関するものである。DISCLOSURE OF THE INVENTION The present invention has been proposed in view of the above, and (1) 20 to 40% by weight of an inorganic carboxylic acid; (2) 0.1 to 0.5% of a phosphoric acid derivative or a salt thereof. (3) 10-20% by weight of salts of inorganic carboxylic acids, (4)
0.01 to 0.05% by weight of an organic sulfur compound derivative,
(5) 0.01-0.05% by weight of sodium hydroxide, (6)
5 to 20% by weight of potassium hydroxide, (7) 5 to 40% by weight of a sulfonic acid derivative or a salt thereof, and (8) ethylene derivative.
01-0.05% by weight, (9) tin salts 10-20% by weight,
(10) A neutral tin plating bath composition comprising 20 to 50% by weight of water.
【０００５】また、本発明は、上記組成物に(11)鉛塩類
１〜２重量％を加えてなるハンダめっき浴組成物をも提
案する。[0005] The present invention also proposes a solder plating bath composition obtained by adding (11) 1 to 2% by weight of a lead salt to the above composition.
【０００６】[0006]
【発明の実施の形態】本発明の中性錫めっき浴組成物、
ハンダめっき浴組成物を構成する各成分について以下に
説明する。BEST MODE FOR CARRYING OUT THE INVENTION The neutral tin plating bath composition of the present invention,
Each component constituting the solder plating bath composition will be described below.
【０００７】(１)無機カルボン酸としては、具体的には
クエン酸、リンゴ酸、コハク酸等を用いる。このような
無機カルボン酸は、めっき浴中で錯化剤の作用を果たす
と共にめっき浴を安定化する作用も果たす。この無機カ
ルボン酸は、２０〜４０重量％配合するが、この範囲以
下では良好なめっきが得られない。また、この範囲以上
ではチップコンデンサにメッキをすると製品に対してダ
メージを与え、のびが出やすい。(1) Specific examples of the inorganic carboxylic acid include citric acid, malic acid, and succinic acid. Such an inorganic carboxylic acid functions as a complexing agent in the plating bath and also stabilizes the plating bath. This inorganic carboxylic acid is blended in an amount of 20 to 40% by weight. However, below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【０００８】(２)リン酸誘導体又はその塩類としては、
具体的には１−ハイドロキシエタン−、１．１ジホスフ
ィックアシッド（ホスホン酸）を用いる。このリン酸誘
導体又はその塩類は、めっき浴を安定化する作用を果た
す。このリン酸誘導体又はその塩類は、０．１〜０．５
重量％配合するが、この範囲以下では良好なめっきが得
られない。また、この範囲以上ではチップコンデンサに
メッキをすると製品に対してダメージを与え、のびが出
やすい。(2) Phosphoric acid derivatives or salts thereof include:
Specifically, 1-hydroxyethane-, 1.1 diphosphonic acid (phosphonic acid) is used. The phosphoric acid derivative or salts thereof act to stabilize the plating bath. The phosphoric acid derivative or a salt thereof is 0.1 to 0.5
However, good plating cannot be obtained when the content is less than this range. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【０００９】(３)無機カルボン酸の塩類としては、具体
的にはクエン酸、リンゴ酸、コハク酸等の塩類を用い
る。この無機カルボン酸の塩類は、メッキ浴を安定化す
る作用を果たす。この無機カルボン酸の塩類は、１０〜
２０重量％配合するが、この範囲以下では良好なめっき
が得られない。また、この範囲以上ではチップコンデン
サにメッキをすると製品に対してダメージを与え、のび
が出やすい。(3) As salts of inorganic carboxylic acids, specifically, salts of citric acid, malic acid, succinic acid and the like are used. The salts of the inorganic carboxylic acids serve to stabilize the plating bath. The salts of this inorganic carboxylic acid are 10 to
20% by weight is blended, but below this range good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１０】(４)有機イオウ化合物誘導体としては、具
体的には２−ベンゾチアゾールチオールを用いる。この
有機イオウ化合物誘導体は、析出しためっき被膜の緻密
化及び光沢作用に寄与する。この有機イオウ化合物誘導
体は、０．０１〜０．０５重量％配合するが、この範囲
以下では良好なめっきが得られない。また、この範囲以
上ではチップコンデンサにメッキをすると製品に対して
ダメージを与え、のびが出やすい。(4) As the organic sulfur compound derivative, specifically, 2-benzothiazolethiol is used. This organic sulfur compound derivative contributes to densification and gloss of the deposited plating film. The organic sulfur compound derivative is added in an amount of 0.01 to 0.05% by weight. However, below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１１】(５)水酸化ナトリウムは、イオウ化合物を
溶解する作用を果たすと共に、めっき浴を安定化する作
用をも果たす。この水酸化ナトリウムは、０．０１〜
０．０５重量％配合するが、この範囲以下では良好なめ
っきが得られない。また、この範囲以上ではチップコン
デンサにメッキをすると製品に対してダメージを与え、
のびが出やすい。(5) Sodium hydroxide functions to dissolve the sulfur compound and also functions to stabilize the plating bath. This sodium hydroxide is 0.01 to
0.05% by weight is blended, but below this range good plating cannot be obtained. Above this range, plating the chip capacitor will damage the product,
Easy to spread.
【００１２】(６)水酸化カリウムは、めっき浴を安定化
する作用を果たす。この水酸化カリウムは、５〜２０重
量％配合するが、この範囲以下では良好なめっきが得ら
れない。また、この範囲以上ではチップコンデンサにメ
ッキをすると製品に対してダメージを与え、のびが出や
すい。(6) Potassium hydroxide functions to stabilize the plating bath. This potassium hydroxide is blended in an amount of 5 to 20% by weight, but below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１３】(７)スルホン酸誘導体又はその塩類として
は、具体的にはメタンスルホン酸を用いる。このスルホ
ン酸誘導体又はその塩類は、めっき浴を安定化する作用
を果たす。このスルホン酸誘導体又はその塩類は、２０
〜４０重量％配合するが、この範囲以下では良好なめっ
きが得られない。また、この範囲以上ではチップコンデ
ンサにメッキをすると製品に対してダメージを与え、の
びが出やすい。(7) As the sulfonic acid derivative or salts thereof, specifically, methanesulfonic acid is used. The sulfonic acid derivative or a salt thereof functions to stabilize the plating bath. This sulfonic acid derivative or a salt thereof contains 20
If the content is less than this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１４】(８)エチレン誘導体としては、ポリエチレ
ングリコールを用いる。このエチレン誘導体は、析出し
ためっき被膜の緻密化及び光沢作用に寄与する。このエ
チレン誘導体は、０．０１〜０．０５重量％配合する
が、この範囲以下では良好なめっきが得られない。ま
た、この範囲以上ではチップコンデンサにメッキをする
と製品に対してダメージを与え、のびが出やすい。(8) As the ethylene derivative, polyethylene glycol is used. This ethylene derivative contributes to densification and gloss of the deposited plating film. The ethylene derivative is added in an amount of 0.01 to 0.05% by weight. However, below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１５】(９)錫塩類としては、具体的には酸化第一
錫、硫酸第一錫、塩化第一錫等を用いる。この錫塩類
は、１０〜２０重量％配合するが、この範囲以下では良
好なめっきが得られない。また、この範囲以上ではチッ
プコンデンサにメッキをすると製品に対してダメージを
与え、のびが出やすい。(9) As the tin salts, specifically, stannous oxide, stannous sulfate, stannous chloride and the like are used. These tin salts are blended in an amount of 10 to 20% by weight, but below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１６】(11)鉛塩類としては、具体的には酢酸鉛、
酸化鉛等を用いる。この鉛塩類は、１〜２重量％配合す
るが、この範囲以下では良好なめっきが得られない。ま
た、この範囲以上ではチップコンデンサにメッキをする
と製品に対してダメージを与え、のびが出やすい。(11) As the lead salts, specifically, lead acetate,
Use lead oxide or the like. This lead salt is blended in an amount of 1 to 2% by weight, but below this range, good plating cannot be obtained. In addition, if the thickness exceeds this range, plating the chip capacitor may damage the product, and tends to spread.
【００１７】このような各成分からなる本発明の中性錫
めっき浴組成物、ハンダめっき浴組成物は、部品にダメ
ージを生ずることなく、ハンダ付け性、ハンダ耐熱性、
ハンダ濡れ性に優れためっき被膜を得ることができる。The neutral tin plating bath composition and the solder plating bath composition of the present invention comprising the above-mentioned components can be used for soldering, solder heat resistance, without damaging parts.
A plating film having excellent solder wettability can be obtained.
【００１８】[0018]
【実施例】表１に示す組成の中性錫めっき浴組成物、表
２に示す組成のハンダめっき浴組成物をそれぞれ調製
し、連続めっき試験を行った。EXAMPLE A neutral tin plating bath composition having the composition shown in Table 1 and a solder plating bath composition having the composition shown in Table 2 were prepared and subjected to continuous plating tests.
【表１】 [Table 1]
【表２】 [Table 2]
【００１９】前記表１及び表２に示す組成の各めっき浴
組成物は、錫及び鉛が錯化合物を形成し、中性付近で安
定して溶解したものとなった。また、得られためっき被
膜はハンダ付け性、ハンダ耐熱性、ハンダ濡れ性に優れ
たものであった。これに対して、各薬品成分が前記範囲
より少ないと、錫が加水分解して白色の沈殿を生じ易
く、また多いと、電流効率の低下が生じた。In each of the plating bath compositions having the compositions shown in Tables 1 and 2, tin and lead formed a complex compound and were dissolved stably near neutrality. Moreover, the obtained plating film was excellent in solderability, solder heat resistance, and solder wettability. On the other hand, when the amount of each chemical component is less than the above range, tin is liable to be hydrolyzed to form a white precipitate, and when the amount is too large, the current efficiency is lowered.
【００２０】[0020]
【発明の効果】以上説明したように本発明の中性錫めっ
き浴組成物は、部品にダメージを生ずることなく、ハン
ダ付け性、ハンダ耐熱性、ハンダ濡れ性に優れためっき
被膜を得ることができる。また、めっき液は安全性に優
れており、４価の錫の生成も少なく、液の管理も容易で
ある。さらに、めっき液は一液性で建浴が容易である。
また鉛フリーであるため、環境に優しい原料で構成され
ている。As described above, the neutral tin plating bath composition of the present invention can provide a plating film having excellent solderability, solder heat resistance and solder wettability without causing damage to parts. it can. Further, the plating solution is excellent in safety, produces less tetravalent tin, and is easy to manage. Further, the plating solution is a one-part solution and is easy to build.
In addition, since it is lead-free, it is composed of environmentally friendly raw materials.
【００２１】また、本発明のハンダめっき浴組成物は、
部品にダメージを生ずることなく、ハンダ付け性、ハン
ダ耐熱性、ハンダ濡れ性に優れためっき被膜を得ること
ができる。さらに、めっき液は安全性に優れており、４
価の錫の生成も少なく、液の管理も容易である。さら
に、めっき液は一液性で建浴が容易である。Further, the solder plating bath composition of the present invention comprises:
A plated coating excellent in solderability, solder heat resistance, and solder wettability can be obtained without causing damage to parts. Furthermore, the plating solution is excellent in safety,
The production of valence tin is small and the management of the liquid is easy. Further, the plating solution is a one-part solution and is easy to build.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮武 功 東京都北区中里１−９−14 Ｆターム(参考） 4K023 AA17 AB34 BA06 BA08 BA21 BA29 CA09 CB03 CB07 CB28 CB33 DA06 5E343 BB34 CC78 GG18 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Isao Miyatake 1-9-14 Nakazato, Kita-ku, Tokyo F-term (reference) 4K023 AA17 AB34 BA06 BA08 BA21 BA29 CA09 CB03 CB07 CB28 CB33 DA06 5E343 BB34 CC78 GG18
Claims (2)
酸誘導体又はその塩類０．１〜０．５重量％、無機カル
ボン酸の塩類１０〜２０重量％、有機イオウ化合物誘導
体０．０１〜０．０５重量％、水酸化ナトリウム０．０
１〜０．０５重量％、水酸化カリウム５〜２０重量％、
スルホン酸誘導体又はその塩類５〜４０重量％、エチレ
ン誘導体０．０１〜０．０５重量％、錫塩類１０〜２０
重量％、水２０〜５０重量％からなることを特徴とする
中性錫めっき浴組成物。1. An inorganic carboxylic acid 20 to 40% by weight, a phosphoric acid derivative or a salt thereof 0.1 to 0.5% by weight, an inorganic carboxylic acid salt 10 to 20% by weight, an organic sulfur compound derivative 0.01 to 0%. 0.05% by weight, sodium hydroxide 0.0
1 to 0.05% by weight, potassium hydroxide 5 to 20% by weight,
Sulfonic acid derivatives or salts thereof 5 to 40% by weight, ethylene derivatives 0.01 to 0.05% by weight, tin salts 10 to 20
A neutral tin plating bath composition consisting of 20% by weight of water and 20 to 50% by weight of water.
酸誘導体又はその塩類０．１〜０．５重量％、無機カル
ボン酸の塩類１０〜２０重量％、有機イオウ化合物誘導
体０．０１〜０．０５重量％、水酸化ナトリウム０．０
１〜０．０５重量％、水酸化カリウム５〜２０重量％、
スルホン酸誘導体又はその塩類５〜４０重量％、エチレ
ン誘導体０．０１〜０．０５重量％、錫塩類１０〜２０
重量％、鉛塩類１〜２重量％、水２０〜５０重量％から
なることを特徴とするハンダめっき浴組成物。2. An inorganic carboxylic acid 20 to 40% by weight, a phosphoric acid derivative or a salt thereof 0.1 to 0.5% by weight, an inorganic carboxylic acid salt 10 to 20% by weight, an organic sulfur compound derivative 0.01 to 0%. 0.05% by weight, sodium hydroxide 0.0
1 to 0.05% by weight, potassium hydroxide 5 to 20% by weight,
Sulfonic acid derivatives or salts thereof 5 to 40% by weight, ethylene derivatives 0.01 to 0.05% by weight, tin salts 10 to 20
1% by weight, 1 to 2% by weight of lead salts, and 20 to 50% by weight of water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042404A JP2001234386A (en) | 2000-02-21 | 2000-02-21 | Neutral tinning bath composition and soldering bath composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042404A JP2001234386A (en) | 2000-02-21 | 2000-02-21 | Neutral tinning bath composition and soldering bath composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001234386A true JP2001234386A (en) | 2001-08-31 |
Family
ID=18565482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000042404A Pending JP2001234386A (en) | 2000-02-21 | 2000-02-21 | Neutral tinning bath composition and soldering bath composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001234386A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1576203A4 (en) * | 2002-11-27 | 2007-10-24 | Technic | Reduction of surface oxidation during electroplating |
| CN100440468C (en) * | 2005-01-31 | 2008-12-03 | 三洋电机株式会社 | Method for manufacturing circuit device |
| CN104593835A (en) * | 2015-02-04 | 2015-05-06 | 广东羚光新材料股份有限公司 | Neutral tin plating solution used in electroplating terminal electrodes of chip component |
-
2000
- 2000-02-21 JP JP2000042404A patent/JP2001234386A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1576203A4 (en) * | 2002-11-27 | 2007-10-24 | Technic | Reduction of surface oxidation during electroplating |
| CN100440468C (en) * | 2005-01-31 | 2008-12-03 | 三洋电机株式会社 | Method for manufacturing circuit device |
| CN104593835A (en) * | 2015-02-04 | 2015-05-06 | 广东羚光新材料股份有限公司 | Neutral tin plating solution used in electroplating terminal electrodes of chip component |
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