JP2001232666A - Apparatus and method for manufacturing optical disk - Google Patents
Apparatus and method for manufacturing optical diskInfo
- Publication number
- JP2001232666A JP2001232666A JP2000042723A JP2000042723A JP2001232666A JP 2001232666 A JP2001232666 A JP 2001232666A JP 2000042723 A JP2000042723 A JP 2000042723A JP 2000042723 A JP2000042723 A JP 2000042723A JP 2001232666 A JP2001232666 A JP 2001232666A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- optical disk
- substrates
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/263—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/263—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
- B29C45/2642—Heating or cooling means therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/263—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
- B29C2045/2651—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs using a plurality of mould cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/263—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
- B29C2045/2659—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs for making substrates for laminated disks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光ディスク、より
詳しくはＤＶＤ（Digital Versatile Disc）等に利用さ
れる貼り合わせ型の光ディスクを製造する光ディスク製
造装置、及び光ディスク製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disk manufacturing apparatus and an optical disk manufacturing method for manufacturing a bonded optical disk used for an optical disk, more specifically, a DVD (Digital Versatile Disc) or the like.
【０００２】[0002]
【従来の技術】上記ＤＶＤ等に利用される貼り合わせ型
の光ディスクを製造する技術として、記録層を複数枚貼
り合わせることで多層記録を可能にした光ディスクの製
造技術が知られている。具体的には以下のような製造工
程を経る。予め射出成形で製造された一対の透明樹脂基
板における互いの対向面の一面或いは両面に、金或いは
アルミニウムなどの金属薄膜を形成する。次に、このよ
うな一対の基板を２４時間温度湿度の管理された室内で
自然放置し、成形時に上記基板に生じた応力を除去す
る。その後、比較的狭い間隔をあけた状態で上記一対の
基板を対向保持しておき、上記間隙に紫外線硬化型など
の接着剤を吐出する。そして上記間隙の全体を広げて、
上記一対の基板とその中間の接着層とからなる積層体を
得る。この積層体に紫外線を照射するなどすれば、上記
接着剤が硬化して基板同士の貼り合せが行われ、貼り合
わせ型光ディスクが得られる。その後、該光ディスクの
特性評価として、ゴミ、汚れ等を検出する外観検査と、
反り量を検出するチルト検査と、接着剤の厚みを検出す
る膜厚検査の３項目を自動検査機で行っている。2. Description of the Related Art As a technology for manufacturing a bonded optical disk used for the above-mentioned DVD and the like, there is known an optical disk manufacturing technology which enables multilayer recording by bonding a plurality of recording layers. Specifically, the following manufacturing process is performed. A metal thin film such as gold or aluminum is formed on one or both surfaces of a pair of transparent resin substrates which are manufactured in advance by injection molding. Next, such a pair of substrates is allowed to stand naturally in a room where the temperature and humidity are controlled for 24 hours to remove the stress generated on the substrates during molding. Thereafter, the pair of substrates is held opposite to each other with a relatively small space therebetween, and an adhesive such as an ultraviolet curing type is discharged into the space. And widen the whole gap,
A laminate comprising the pair of substrates and an intermediate adhesive layer is obtained. By irradiating the laminated body with ultraviolet rays, the adhesive is cured and the substrates are bonded to each other, whereby a bonded optical disk is obtained. Thereafter, as an evaluation of the characteristics of the optical disc, an appearance inspection for detecting dust, dirt, etc.,
The automatic inspection machine performs three items: tilt inspection for detecting the amount of warpage and film thickness inspection for detecting the thickness of the adhesive.
【０００３】上記光ディスクに記録されたデータの読み
取り又は書き込みは、上記光ディスクを高速回転させな
がら、該光ディスクの基板を通過して記録層に到達する
レーザ光を光ディスクの外部から照射することで行う。
上記記録層におけるデータの記録密度は極めて高密度で
あるため、上記レーザ光を上記記録層の所定位置に正確
に照射する必要がある。よって、上記記録層及び光ディ
スク全体の平面度が悪いと、レーザ光を上記記録層の所
定位置に正確に焦点を合わせて照射することができず、
上記データの読み取り又は書き込み動作に誤りが生じや
すい。したがって、光ディスクの製造に当っては、上記
貼り合わせ後の光ディスクに反りや歪みが生じず、しか
も上記接着層の厚みが均一であり、高い平面度が一定の
環境下で長期間維持できることが要求される。The reading or writing of data recorded on the optical disk is performed by irradiating a laser beam reaching the recording layer through the substrate of the optical disk from outside the optical disk while rotating the optical disk at a high speed.
Since the recording density of data in the recording layer is extremely high, it is necessary to accurately irradiate the laser light to a predetermined position of the recording layer. Therefore, if the flatness of the entire recording layer and the optical disc is poor, the laser beam cannot be accurately focused on a predetermined position of the recording layer and irradiated.
An error is likely to occur in the data reading or writing operation. Therefore, in manufacturing an optical disk, it is required that the bonded optical disk does not warp or be distorted, the thickness of the adhesive layer is uniform, and a high flatness can be maintained for a long time in a constant environment. Is done.
【０００４】[0004]
【発明が解決しようとする課題】ところが、上述の貼り
合わせ型の光ディスクの場合、上記接着剤を光硬化させ
る過程で、基板に反りが生じ、しかも反りの方向も安定
せずかつ接着剤の厚みも安定されず、よって平面度が悪
くなることが判った。その理由として、樹脂成形された
上記基板には、射出充填時の剪断応力と金型内での冷却
過程に生じる熱応力により残留応力が発生する。詳しく
説明すると、上記基板の表面には、記録情報に対応する
微細な凸凹からなるピットが形成されている。該ピット
の形成は、上記ピットに対応して凹凸が形成されたニッ
ケル製のスタンパを金型内に装着し、該スタンパの上記
凹凸を樹脂に転写することで行われる。上記基板の厚み
は０．６ｍｍと薄肉であり、該基板の内径はφ１５ｍ
ｍ、外径はφ１２０ｍｍであり、射出成形で上記ピット
の転写を行わせるため、樹脂材を高速高圧で金型内へ射
出して圧縮成形をするのが一般的である。そのため、金
型内への射出充填時に樹脂材は金型壁面をこすりながら
流れるため、成形された基板には剪断応力が発生する。
さらに、溶融状態の樹脂材にてなる基板を取り出し可能
な温度まで下げるときには、該基板内に熱応力が発生す
る。これらの応力が残留応力となり、一対の基板を貼り
合わせるときに応力の引っ張り合いが発生し、該引っ張
り合いにより、貼り合わせ後の光ディスクの反り方向と
反り量とが決まる。又、経年変化における反り量もこの
残留応力の状態で決まることが判った。However, in the case of the above-mentioned laminated optical disk, the substrate is warped during the process of photo-curing the adhesive, and the direction of the warping is not stable, and the thickness of the adhesive is small. Was not stabilized, and the flatness was deteriorated. The reason is that residual stress is generated in the resin-molded substrate due to shear stress during injection filling and thermal stress generated during a cooling process in the mold. More specifically, on the surface of the substrate, pits composed of fine irregularities corresponding to recorded information are formed. The formation of the pits is performed by mounting a nickel stamper having projections and depressions corresponding to the pits in a mold, and transferring the projections and depressions of the stamper to a resin. The thickness of the substrate is as thin as 0.6 mm, and the inner diameter of the substrate is φ15 m.
m, the outer diameter is 120 mm, and in order to transfer the pits by injection molding, it is common to inject a resin material into a mold at high speed and high pressure to perform compression molding. Therefore, the resin material flows while rubbing the mold wall surface during injection filling into the mold, so that a shear stress is generated in the formed substrate.
Further, when the substrate made of the molten resin material is lowered to a temperature at which it can be taken out, thermal stress is generated in the substrate. These stresses become residual stresses, and when the pair of substrates are bonded to each other, the tensile strength of the stress occurs. The tensile strength determines the warping direction and the amount of warpage of the optical disc after bonding. It was also found that the amount of warpage due to aging depends on the state of the residual stress.
【０００５】上記残留応力を緩和させるため、成形後、
金型から取り出された基板は、通常、２４時間自然放置
している。この放置をアニール処理と呼ぶ。該アニール
処理を行うためには、大量多品種の基板を保管する温度
湿度管理の徹底された広い場所が必要である。しかしな
がら、上記基板の保存される環境や、基板の保持方法、
例えば上から何枚目か等のような保持場所の条件によっ
て、上記残留応力の解放された方が個々の基板によって
異なり、貼り合わせする前の基板自身の反り量も大小あ
り、反りの方向も一定していない。又、上記アニール
後、基板には反射材としての金属膜を形成するが、この
とき再び基板の温度は上昇する。よってこの温度差によ
っても基板の反り方向、反り量を不安定にする要因とな
っている。In order to alleviate the residual stress, after molding,
The substrate taken out of the mold is usually left standing for 24 hours. This leaving is called an annealing process. In order to perform the annealing treatment, a wide place where temperature and humidity control is thorough for storing a large number of substrates of various types is required. However, the environment where the substrate is stored, the method of holding the substrate,
For example, depending on the conditions of the holding place such as the number of sheets from the top, the direction in which the residual stress is released differs depending on the individual substrate, the amount of warpage of the substrate itself before bonding is large and small, and the direction of the warp is also Not constant. After the annealing, a metal film is formed on the substrate as a reflection material. At this time, the temperature of the substrate rises again. Therefore, even this temperature difference is a factor that makes the direction and amount of warpage of the substrate unstable.
【０００６】よって、反り方向の一定していない基板同
士を貼り合わせると、貼り合わせ後の光ディスクの反り
も不安定であり反り方向も一方向ではない。その結果、
貼り合わせ後のチルト検査工程では、規格外の反りと判
断され、該不良の光ディスクはライン上より排出され
る。又、上述のように、アニールにより基板を十分固化
させてから貼り合わせているため、基板の反りは固定さ
れた状態でしかも残留応力は緩和されている。しかしな
がらこのことは、基板の反りが限りなくゼロでなけれ
ば、貼り合わせの際に、反りの大きい方に引っ張られ貼
り合わせ後のチルトは悪化するという結果を招くことに
なる。よって、従来では、それぞれの基板の反りを極力
小さくするという観点に基づいて、基板成形動作や成形
後の管理を行っていた。このように、従来の光ディスク
製造方法では、いわゆる歩留まりが悪くなり生産性が悪
化し、光ディスクのコスト単価のアップとなるばかり
か、生産効率も下がり納期遅れをもたらす。Therefore, when substrates having different warpage directions are bonded together, the warp of the optical disc after bonding is unstable, and the warp direction is not one direction. as a result,
In the tilt inspection step after bonding, it is determined that the warpage is out of specification, and the defective optical disk is ejected from the line. Further, as described above, since the substrates are bonded after being sufficiently solidified by annealing, the warpage of the substrates is fixed and the residual stress is reduced. However, if the warp of the substrate is not infinitely zero, this results in that the tilt after the bonding is deteriorated because the substrate is pulled in the direction of the larger warp during bonding. Therefore, conventionally, the substrate forming operation and the management after the forming have been performed from the viewpoint of minimizing the warpage of each substrate. As described above, in the conventional optical disk manufacturing method, the so-called yield is deteriorated, and productivity is deteriorated. Not only is the cost per unit of optical disk increased, but also the production efficiency is reduced and the delivery date is delayed.
【０００７】本発明は、上述したような問題点を解決す
るためになされたもので、貼り合わせ型の光ディスクを
製造するに当たり、生産性が高く高品質な光ディスクを
得ることができる光ディスク製造装置、及び光ディスク
製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. In manufacturing a bonded optical disk, an optical disk manufacturing apparatus capable of obtaining a high-quality optical disk with high productivity is provided. And a method for manufacturing an optical disc.
【０００８】[0008]
【課題を解決するための手段】上記問題点を解決するた
めに、本発明の第１態様の光ディスク製造装置は、複数
の基板を貼り合わせて光ディスクを製造する光ディスク
製造装置であって、上記複数の基板を成形する成形装置
であって、基板成形のときに上記複数の基板に生じる応
力を上記複数の基板で近似させて上記複数の基板を成形
する成形装置と、成形された上記複数の基板について、
上記応力が残存した状態にて、各基板における上記応力
が上記基板の貼り合わせにより相殺される相殺状態にて
貼り合わせを行う貼り合せ装置と、を備えたことを特徴
とする。In order to solve the above problems, an optical disk manufacturing apparatus according to a first aspect of the present invention is an optical disk manufacturing apparatus for manufacturing an optical disk by bonding a plurality of substrates. A molding device for molding the plurality of substrates by approximating the stress generated in the plurality of substrates by the plurality of substrates during substrate molding, and a molding device for molding the plurality of substrates. about,
And a bonding apparatus for performing bonding in a state where the stress in each substrate is canceled by bonding the substrates in a state where the stress remains.
【０００９】又、上記成形装置は、第１金型及び第２金
型を有し、上記第１金型及び第２金型は、上記第１金型
及び第２金型に挟まれた領域に上記複数の基板を成形す
るための複数のキャビティーを形成するように構成する
ことができる。Further, the molding apparatus has a first mold and a second mold, and the first mold and the second mold are formed in a region sandwiched between the first mold and the second mold. To form a plurality of cavities for molding the plurality of substrates.
【００１０】又、上記成形装置は、さらに、外周部温調
装置と、内周部温調装置と、成形装置用制御部とを有
し、上記外周部温調装置は、上記複数のキャビティーに
て成形される上記基板におけるそれぞれの外周部分の温
度制御を行い、上記内周部温調装置は、上記複数のキャ
ビティーにて成形される上記基板におけるそれぞれの内
周部分の温度制御を行い、上記成形装置用制御部は、上
記複数のキャビティーにて上記基板をそれぞれ成形する
ときに上記基板に生じるそれぞれの応力を上記基板で近
似させる動作制御を、上記外周部温調装置及び上記内周
部温調装置に対して行うように構成することができる。The molding apparatus further includes an outer peripheral temperature control device, an inner peripheral temperature control device, and a control unit for the molding device, wherein the outer peripheral temperature control device includes the plurality of cavities. Performs temperature control of each outer peripheral portion of the substrate formed by the above, and the inner peripheral portion temperature controller performs temperature control of each inner peripheral portion of the substrate formed by the plurality of cavities. The control unit for the molding device controls the operation of approximating each stress generated in the substrate by the substrate when the substrate is molded in each of the plurality of cavities. It can be configured to perform on the peripheral temperature control device.
【００１１】又、上記外周部温調装置は、上記複数のキ
ャビティーのそれぞれに対応して上記第１金型に接続さ
れる第１外周部温調装置と、上記複数のキャビティーの
それぞれに対応して上記第２金型に接続される第２外周
部温調装置とを有し、上記内周部温調装置は、上記複数
のキャビティーのそれぞれに対応して上記第１金型に接
続される第１内周部温調装置と、上記複数のキャビティ
ーのそれぞれに対応して上記第２金型に接続される第２
内周部温調装置とを有するように構成することができ
る。Further, the outer peripheral portion temperature control device includes a first outer peripheral portion temperature control device connected to the first mold corresponding to each of the plurality of cavities, and a plurality of cavities. A second outer peripheral temperature controller correspondingly connected to the second mold, wherein the inner peripheral temperature controller corresponds to the first mold corresponding to each of the plurality of cavities. A first inner peripheral temperature controller connected to the second mold connected to the second mold corresponding to each of the plurality of cavities;
It can be configured to have an inner peripheral temperature control device.
【００１２】又、上記成形装置用制御部は、上記第１外
周部温調装置、上記第１内周部温調装置、上記第２外周
部温調装置、及び上記第２内周部温調装置に対して、上
記複数のキャビティーにて成形されるそれぞれの上記基
板において、上記第１金型側の第１温度を上記第２金型
側の第２温度に比べて高くしかつ上記第１温度と上記第
２温度との差を強制反り発生温度差に制御し、ここで上
記強制反り発生温度差は、成形後に当該成形装置から取
り出された上記基板の上記内周部分が上記外周部分に比
して上記第２金型側に突状となる温度差であるように構
成することができる。Further, the control unit for the molding apparatus includes the first outer peripheral temperature controller, the first inner peripheral temperature controller, the second outer peripheral temperature controller, and the second inner peripheral temperature controller. In the apparatus, the first temperature on the first mold side is higher than the second temperature on the second mold side in each of the substrates molded in the plurality of cavities, and The difference between the first temperature and the second temperature is controlled to a forced warpage occurrence temperature difference, wherein the forced warpage occurrence temperature difference is determined by the fact that the inner peripheral part of the substrate taken out of the molding apparatus after molding is formed by the outer peripheral part. It can be configured so that the temperature difference becomes protruding toward the second mold side as compared with the above.
【００１３】又、上記成形装置用制御部は、さらに、上
記第１外周部温調装置、上記第１内周部温調装置、上記
第２外周部温調装置、及び上記第２内周部温調装置に対
して、上記複数のキャビティーにて成形されるそれぞれ
の上記基板において、上記内周部分の内周部温度に比し
て上記外周部分の外周部温度を高くしかつ上記内周部温
度と上記外周部温度との差を平坦部成形用温度差に制御
し、ここで上記平坦部成形用温度差は、成形後に当該成
形装置から取り出した上記基板に上記貼り合せ用の接着
剤を塗布した際に上記接着剤が上記基板の直径方向へ流
出するのを防止する流出防止部を形成する温度であるよ
うに構成することができる。[0013] The control unit for the molding apparatus further includes a first outer peripheral temperature controller, a first inner peripheral temperature controller, a second outer peripheral temperature controller, and a second inner peripheral unit. For the temperature control device, in each of the substrates molded in the plurality of cavities, the outer peripheral temperature of the outer peripheral portion is higher than the inner peripheral temperature of the inner peripheral portion, and the inner peripheral temperature is increased. Controlling the difference between the part temperature and the outer peripheral part temperature to the flat part forming temperature difference, wherein the flat part forming temperature difference is applied to the substrate taken out of the forming apparatus after the forming and the bonding adhesive When the adhesive is applied, the temperature may be set to a temperature at which an outflow preventing portion for preventing the adhesive from flowing out in the diameter direction of the substrate is formed.
【００１４】又、上記貼り合わせ後、上記光ディスクの
反り量を検査する検査装置と、上記検査装置が送出する
検査結果の上記反り量が許容範囲を超えたときには、上
記貼り合わせ動作の際に上記各基板を保持している保持
部材の温度調節を行う制御装置と、をさらに備えること
もできる。Further, after the bonding, an inspection device for inspecting the amount of warpage of the optical disk, and when the amount of warpage of the inspection result sent by the inspection device exceeds an allowable range, the inspection device performs And a controller for adjusting the temperature of the holding member holding each substrate.
【００１５】又、上記検査装置は、さらに、上記貼り合
わせ後、上記貼り合わせに使用した接着剤にてなる接着
層の膜厚を検査し、上記制御装置は、さらに、上記検査
装置が送出する検査結果の上記膜厚が許容範囲を超えた
ときには、少なくとも上記接着剤の温度調節及び上記基
板の回転数調節の一方を行うこともできる。Further, after the above-mentioned bonding, the above-mentioned inspection device further inspects the thickness of the adhesive layer made of the adhesive used for the above-mentioned bonding, and the above-mentioned control device further sends out the above-mentioned inspection device. When the thickness of the inspection result exceeds the allowable range, at least one of the temperature adjustment of the adhesive and the rotation speed adjustment of the substrate can be performed.
【００１６】又、本発明の第２態様の光ディスク製造方
法は、複数の基板を貼り合わせて光ディスクを製造する
光ディスク製造方法であって、成形時に上記基板に生じ
る応力を各基板間で近似させて上記複数の基板を成形
し、成形された上記複数の基板について、上記応力が残
存した状態にて、各基板における上記応力が上記基板の
貼り合わせにより相殺される相殺状態にて貼り合わせ
る、ことを特徴とする。An optical disk manufacturing method according to a second aspect of the present invention is an optical disk manufacturing method for manufacturing an optical disk by bonding a plurality of substrates, wherein the stress generated in the substrates during molding is approximated between the substrates. The plurality of substrates are formed, and the formed plurality of substrates are bonded together in a state where the stress remains, wherein the stress in each substrate is offset by the bonding of the substrates. Features.
【００１７】又、上記応力を近似させた基板成形は、基
板成形後において、各基板を強制的に反らせる基板成形
であるようにすることができる。Further, the above-described substrate molding in which the stress is approximated may be a substrate molding in which each substrate is forcibly warped after the substrate molding.
【００１８】又、上記強制的な反りにおける反り方向及
び反り量は、上記基板成形時での上記基板の厚み方向に
おける温度勾配により制御するようにしてもよい。The direction and amount of warpage in the forcible warpage may be controlled by a temperature gradient in the thickness direction of the substrate at the time of forming the substrate.
【００１９】又、上記強制的な反りは、上記基板成形時
にて上記基板の内周部分と外周部分とに温度差を設ける
ことで、基板成形後において上記基板に貼り合せ用の接
着剤を塗布した際に上記接着剤が上記基板の直径方向へ
流出するのを防止する流出防止部を形成する反りである
ようにしてもよい。Further, the forced warping is performed by providing a temperature difference between an inner peripheral portion and an outer peripheral portion of the substrate at the time of molding the substrate, so that an adhesive for bonding is applied to the substrate after the substrate is molded. In this case, the adhesive may be a warp forming an outflow preventing portion for preventing the adhesive from flowing out in the diameter direction of the substrate.
【００２０】又、上記貼り合わせ後、上記光ディスクの
反り量、及び上記貼り合わせに使用した接着剤にてなる
接着層の膜厚を検査し、該検査結果により上記反り量が
許容範囲を超えたときには、上記貼り合わせ動作の際に
上記各基板を保持している保持部材の温度調節を行い、
上記検査結果により上記膜厚が許容範囲を超えたときに
は、上記接着剤の温度調節及び上記基板の回転数調節の
少なくとも一方を行うようにしてもよい。After the lamination, the warpage of the optical disk and the thickness of the adhesive layer made of the adhesive used for the lamination were inspected. Sometimes, during the bonding operation, the temperature of the holding member holding the respective substrates is adjusted,
When the inspection result indicates that the film thickness exceeds the allowable range, at least one of the temperature adjustment of the adhesive and the rotation speed adjustment of the substrate may be performed.
【００２１】又、上記貼り合わせ後、上記光ディスクの
反り量、及び上記貼り合わせに使用した接着剤にてなる
接着層の膜厚を検査し、該検査結果により上記反り量が
許容範囲を超えたときには、上記基板成形時における上
記基板の厚み方向における温度勾配の制御を行うように
してもよい。After the bonding, the amount of warpage of the optical disk and the thickness of the adhesive layer made of the adhesive used for the bonding were inspected, and as a result of the inspection, the amount of warping exceeded an allowable range. In some cases, control of the temperature gradient in the thickness direction of the substrate during the formation of the substrate may be performed.
【００２２】又、上記検査結果により上記反り量が許容
範囲を超えたときには、さらに、上記基板成形時におけ
る上記基板の内周部分と外周部分との温度差を制御する
ようにしてもよい。When the amount of warpage exceeds the allowable range as a result of the inspection, the temperature difference between the inner peripheral portion and the outer peripheral portion of the substrate during the formation of the substrate may be further controlled.
【００２３】[0023]
【発明の実施の形態】本発明の実施形態である光ディス
ク製造装置、及び該光ディスク製造装置にて実行される
光ディスク製造方法について、図を参照しながら以下に
説明する。尚、各図において同じ構成部分については同
じ符号を付している。図２に全体構成を示すように、上
記実施形態の光ディスク製造装置１００は、成形装置１
０１と、移送コンベア２０１と、成膜装置３０１と、貼
り合せ装置４０１と、検査装置５０１と、制御装置６０
１とを備える。上記移送コンベア２０１は、成形装置１
０１にて作製された基板７０１を載置し、載置された基
板７０１を上記成膜装置３０１を通って上記貼り合せ装
置４０１へ搬送するコンベアである。従来、上述したよ
うに、成形された基板は成形時に当該基板に生じた応力
を緩和させるために、所定時間、放置したが、本実施形
態の光ディスク製造装置１００では、基板７０１は、成
形装置１０１にて作製後、応力緩和用の放置を行うこと
なく成膜装置３０１、その次の貼り合せ装置４０１へと
順次搬送される。尚、上記基板７０１は、下記する第１
基板７１１と第２基板７１２との総称として用いる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical disk manufacturing apparatus according to an embodiment of the present invention and an optical disk manufacturing method executed by the optical disk manufacturing apparatus will be described below with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals. As shown in FIG. 2, the optical disc manufacturing apparatus 100 of the above embodiment includes a molding apparatus 1
01, a transfer conveyor 201, a film forming apparatus 301, a bonding apparatus 401, an inspection apparatus 501, and a control apparatus 60.
1 is provided. The transfer conveyor 201 includes the molding apparatus 1
This is a conveyor on which the substrate 701 manufactured in step No. 01 is mounted, and the mounted substrate 701 is transported to the bonding apparatus 401 through the film forming apparatus 301. Conventionally, as described above, the formed substrate is left for a predetermined time in order to relieve the stress generated on the substrate at the time of molding. However, in the optical disc manufacturing apparatus 100 of the present embodiment, the substrate 701 is , And are sequentially conveyed to the film forming apparatus 301 and the subsequent bonding apparatus 401 without leaving for stress relaxation. The substrate 701 is provided with a first
The substrate 711 and the second substrate 712 are used as a generic name.
【００２４】上記成膜装置３０１は、真空蒸着装置など
の公知の薄膜形成装置を備え、移送コンベア２０１にて
搬送されてきた基板７０１の表面に対して上記薄膜形成
装置にて金属薄膜、具体的にはアルミニウムの反射膜を
形成する装置である。尚、基板７０１の上記表面とは、
成形装置１０１に備わるスタンパにて記録用情報が形成
された面である。上記成形装置１０１、上記貼り合せ装
置４０１、上記検査装置５０１、及び上記制御装置６０
１は、本実施形態の光ディスク製造装置１００にて特徴
的な構成部分であり、以下に詳しく説明する。The film forming apparatus 301 includes a known thin film forming apparatus such as a vacuum evaporation apparatus, and the surface of the substrate 701 conveyed by the transfer conveyor 201 is subjected to a metal thin film by the thin film forming apparatus. Is an apparatus for forming an aluminum reflective film. Note that the above surface of the substrate 701 is
This is a surface on which recording information is formed by a stamper provided in the molding apparatus 101. The molding device 101, the bonding device 401, the inspection device 501, and the control device 60
Reference numeral 1 denotes a characteristic component of the optical disc manufacturing apparatus 100 of the present embodiment, which will be described in detail below.
【００２５】上記成形装置１０１は、本実施形態では一
度に２枚の光ディスク用基板を成形する装置であり、基
板成形のときに上記基板に生じる応力を上記２枚の基板
で近似させて上記基板を成形する装置である。このよう
な成形装置１０１は、図１に示すように、一般的な成形
装置として必要な構成としての、第１金型１１３、第２
金型１１４、第１キャビティー用射出装置１１５、第２
キャビティー用射出装置１１６、第１キャビティー用剥
離装置１１７、及び第２キャビティー用剥離装置１１８
を備えるとともに、当該成形装置１０１にて特徴的な構
成部分としての、第１外周部温調装置１２１、１２２、
第１内周部温調装置１２３、１２４、第２外周部温調装
置１２５、１２６、及び第２内周部温調装置１２７、１
２８を備える。上述したように従来では、完成品である
光ディスクにおける反りを抑えるため、個々の基板にお
ける反りを極力小さくするという観点に基づいて、基板
成形動作や成形後の管理を行っていた。一方、以下に詳
しく述べるが、本実施形態では、上記第１外周部温調装
置１２１、１２２、第１内周部温調装置１２３、１２
４、第２外周部温調装置１２５、１２６、及び第２内周
部温調装置１２７、１２８を制御することで、上記成形
装置１０１にて成形される２枚の光ディスク用基板につ
いて、同一の反り量になるようにして意図的に反らせ、
これらの光ディスク用基板を互いに逆方向に反った状態
にて貼り合わせることで、各光ディスク用基板の反りを
相殺させて、完成品としての光ディスクにおける反り量
を規格値内に収める。In the present embodiment, the molding apparatus 101 is an apparatus for molding two optical disc substrates at one time. The molding apparatus 101 approximates the stress generated in the substrates during the molding of the substrates by the two substrates. It is a device for molding. As shown in FIG. 1, such a molding apparatus 101 includes a first mold 113 and a second
Mold 114, first cavity injection device 115, second cavity
Cavity injection device 116, first cavity peeling device 117, and second cavity peeling device 118
And first peripheral temperature control devices 121 and 122 as characteristic components of the molding device 101.
First inner peripheral temperature adjusting devices 123 and 124, second outer peripheral temperature adjusting devices 125 and 126, and second inner peripheral temperature adjusting devices 127 and 1
28. As described above, in the related art, in order to suppress the warpage of the finished optical disk, the substrate forming operation and the management after the forming are performed from the viewpoint of minimizing the warpage of each substrate. On the other hand, as described in detail below, in the present embodiment, the first outer peripheral temperature adjusting devices 121 and 122 and the first inner peripheral temperature adjusting devices 123 and 12 are used.
4. By controlling the second outer peripheral temperature adjusting devices 125 and 126 and the second inner peripheral temperature adjusting devices 127 and 128, the same two optical disc substrates formed by the molding device 101 are used. Warp intentionally so that it becomes the amount of warpage,
By bonding these optical disk substrates in a state where they are warped in opposite directions, the warpage of each optical disk substrate is canceled out, and the amount of warpage of the optical disk as a finished product falls within the standard value.
【００２６】図１に示すように当該成形装置１０１は、
一度に２枚の基板を成形可能とするため、第１基板を成
形する第１キャビティー１１１と、第２基板を成形する
第２キャビティー１１２とを有する。上記第１基板及び
第２基板の厚み方向に配置され互いに対向して配置され
た上記第１金型１１３及び第２金型１１４によって挟ま
れた領域として、上記第１キャビティー１１１及び第２
キャビティー１１２は形成される。一度に２枚の基板を
成形する方法としては、同一の成形装置を２台並設する
方法があるが、該方法では個々の成形装置における機差
に起因して、成形された両基板の応力に差が生じ、反り
等に差が発生してしまう。よって、当該成形装置１０１
では、上記第１基板及び第２基板について、成形時にて
それぞれの基板に生じる応力をほぼ同一にするため、上
記第１金型１１３は、図示するように第１キャビティー
１１１及び第２キャビティー１１２の下側にて両キャビ
ティーに共通した一体物からなる金型であり、上記第２
金型１１４は、図示するように第１キャビティー１１１
及び第２キャビティー１１２の上側にて両キャビティー
に共通して一体物からなる金型である。又、本実施形態
では、第１キャビティー１１１及び第２キャビティー１
１２にて成形される基板７０１の厚み方向に沿って第１
金型１１３が昇降装置１３１の動作により移動し、成形
後において第１キャビティー１１１及び第２キャビティ
ー１１２の型開きや、型締めが行われる。よって、本実
施形態では、第１金型１１３が可動側金型であり第２金
型１１４が固定側金型となっている。As shown in FIG. 1, the molding apparatus 101 comprises:
In order to be able to mold two substrates at a time, it has a first cavity 111 for molding the first substrate and a second cavity 112 for molding the second substrate. The first cavity 111 and the second cavity 111 are located between the first mold 113 and the second mold 114 which are arranged in the thickness direction of the first substrate and the second substrate and opposed to each other.
A cavity 112 is formed. As a method of molding two substrates at a time, there is a method of arranging two identical molding devices side by side. However, in this method, the stress of both molded substrates is reduced due to machine differences in individual molding devices. And a difference in warp and the like occurs. Therefore, the molding apparatus 101
Then, in order to make the stress generated in each of the first substrate and the second substrate substantially the same at the time of molding, the first mold 113 includes the first cavity 111 and the second cavity 111 as shown in the drawing. A mold made of an integral body common to both cavities below 112,
The mold 114 is provided with the first cavity 111 as shown.
And a mold that is integrally formed above the second cavity 112 in common with both cavities. In the present embodiment, the first cavity 111 and the second cavity 1
12 along the thickness direction of the substrate 701 formed in
The mold 113 is moved by the operation of the lifting / lowering device 131, and after the molding, the first cavity 111 and the second cavity 112 are opened and clamped. Therefore, in the present embodiment, the first mold 113 is a movable mold and the second mold 114 is a fixed mold.
【００２７】又、第１金型１１３には、第１キャビティ
ー１１１に対応して配置され第１キャビティー１１１に
て形成される第１基板７１１の非接着面７１３を成形す
る第１基板非接着面形成用金型１１３１が組み込まれて
いる。該第１基板非接着面形成用金型１１３１には、第
１基板７１１の外周側から内周側へ、本実施形態では渦
巻き状に冷却材、本実施形態では水が流れるように、第
１基板非接着面側冷却用通路１１３２が形成されてい
る。該第１基板非接着面側冷却用通路１１３２には、第
１基板７１１の成形時において上記非接着面７１３側よ
り上記第１基板７１１の、図１１に示す非接着面側外周
部分７１６１の温度制御を行うため、上記冷却材として
の水を供給及び排出する、第１基板用第１外周部温調装
置１２１が接続されている。又、図示するように、成形
される第１基板７１１の内周部分７１６２に対応して第
１金型１１３には、第１キャビティー用剥離装置１１７
を構成している第１基板剥離ピン用ガイド部材１１７１
が設けられている。よって、上述の第１基板非接着面側
外周部分７１６１とは、第１基板７１１の直径方向にお
いて、第１基板７１１の最外周部から上記第１基板剥離
ピン用ガイド部材１１７１に至るまでの範囲に相当す
る。The first mold 113 is provided with a first substrate non-adhesive surface 713 of the first substrate 711 formed corresponding to the first cavity 111 and formed by the first cavity 111. The bonding surface forming mold 1131 is incorporated. In the first substrate non-bonding surface forming mold 1131, the first coolant is flown from the outer peripheral side to the inner peripheral side of the first substrate 711 in a spiral shape in the present embodiment, and in the first embodiment so that water flows in the first embodiment. A substrate non-bonding surface side cooling passage 1132 is formed. When the first substrate 711 is formed, the temperature of the outer peripheral portion 7161 of the first substrate 711 on the non-adhesion surface side shown in FIG. To perform the control, a first outer peripheral temperature control device 121 for the first substrate for supplying and discharging the water as the coolant is connected. As shown in the figure, the first mold 113 has a first cavity peeling device 117 corresponding to the inner peripheral portion 7162 of the first substrate 711 to be formed.
The first substrate peeling pin guide member 1171 constituting
Is provided. Therefore, the above-mentioned first substrate non-adhesion surface side outer peripheral portion 7161 is a range from the outermost peripheral portion of the first substrate 711 to the first substrate peeling pin guide member 1171 in the diameter direction of the first substrate 711. Is equivalent to
【００２８】又、上記第１基板剥離ピン用ガイド部材１
１７１には、第１基板７１１の成形時において上記非接
着面７１３側より上記第１基板７１１の非接着面側内周
部分７１６２の温度制御を行うため、冷却材、本実施形
態では水が供給及び排出される第１ガイド部材冷却用通
路１１７２が形成され、該第１ガイド部材冷却用通路１
１７２には第１基板用第１内周部温調装置１２３が接続
されている。ここで上記第１基板非接着面側内周部分７
１６２の温度制御は、上記第１基板剥離ピン用ガイド部
材１１７１に上記冷却材を供給することで、上記第１基
板剥離ピン用ガイド部材１１７１が温度制御されること
でなされる。又、上記第１基板非接着面側内周部分７１
６２とは、第１基板７１１の非接着面７１３側において
上記第１基板剥離ピン用ガイド部材１１７１に対応する
部分が相当する。又、第１基板剥離ピン用ガイド部材１
１７１の第１キャビティー１１１に面したキャビティー
面１１７１１には、第１基板７１１の内周部分７１６２
に円環状に凸状のリブを形成するためのリブ用凹部１１
７１２が形成されている。The first substrate peeling pin guide member 1
In order to control the temperature of the inner peripheral portion 7162 of the first substrate 711 on the non-adhesion surface side from the non-adhesion surface 713 at the time of molding the first substrate 711, the coolant 171 is supplied. And a first guide member cooling passage 1172 to be discharged are formed.
172 is connected to the first inner peripheral temperature controller 123 for the first substrate. Here, the first substrate non-adhesive surface side inner peripheral portion 7
The temperature control of 162 is performed by supplying the coolant to the first substrate peeling pin guide member 1171 so that the temperature of the first substrate peeling pin guide member 1171 is controlled. Also, the first substrate non-adhesive surface side inner peripheral portion 71
62 corresponds to a portion corresponding to the first substrate peeling pin guide member 1171 on the non-adhesive surface 713 side of the first substrate 711. Also, the first substrate peeling pin guide member 1
An inner peripheral portion 7162 of the first substrate 711 is provided on a cavity surface 11711 of the first substrate 171 facing the first cavity 111.
Recess 11 for forming an annularly convex rib on the rib
712 are formed.
【００２９】さらに第１金型１１３には、上述の第１キ
ャビティー１１１に対応して設けられた構成部分と同様
の構成が、以下に説明するように、第２キャビティー１
１２に対応して設けられている。即ち、第１金型１１３
には、第２キャビティー１１２に対応して配置され第２
キャビティー１１２にて形成される第２基板７１２の非
接着面７１３を成形する第２基板非接着面形成用金型１
１３３がさらに組み込まれている。該第２基板非接着面
形成用金型１１３３には、第２基板７１２の外周側から
内周側へ、本実施形態では渦巻き状に冷却材として本実
施形態では水が流れるように、第２基板非接着面側冷却
用通路１１３４が形成されている。該第２基板非接着面
側冷却用通路１１３４には、第２基板７１２の成形時に
おいて上記非接着面７１３側より上記第２基板７１２の
非接着面側外周部分７１６１の温度制御を行うため、上
記冷却材としての水を供給及び排出する、第２基板用第
１外周部温調装置１２２が接続されている。又、図示す
るように、成形される第２基板７１２の内周部分７１６
２に対応して第１金型１１３には、第２キャビティー用
剥離装置１１８を構成している第２基板剥離ピン用ガイ
ド部材１１８１が設けられている。よって、上述の第２
基板非接着面側外周部分７１６１とは、第２基板７１２
の直径方向において、第２基板７１２の非接着面側に
て、最外周部から上記第２基板剥離ピン用ガイド部材１
１８１に至るまでの範囲に相当する。Further, the first mold 113 has the same configuration as the component provided corresponding to the above-described first cavity 111, as will be described below.
12 are provided. That is, the first mold 113
Has a second cavity 112 disposed corresponding to the second cavity 112.
Second substrate non-adhesive surface forming mold 1 for molding non-adhesive surface 713 of second substrate 712 formed in cavity 112
133 is further incorporated. The second substrate non-adhesive surface forming mold 1133 is formed so as to flow from the outer peripheral side to the inner peripheral side of the second substrate 712 in a spiral shape in the present embodiment as a coolant so that water flows in the present embodiment. A substrate non-bonding surface side cooling passage 1134 is formed. In the second substrate non-adhesive surface side cooling passage 1134, the temperature of the non-adhesive surface side outer peripheral portion 7161 of the second substrate 712 is controlled from the non-adhesive surface 713 side during the molding of the second substrate 712. The first outer peripheral temperature control device 122 for the second substrate, which supplies and discharges the water as the coolant, is connected. Also, as shown, the inner peripheral portion 716 of the second substrate 712 to be formed is
The first mold 113 is provided with a guide member 1181 for the second substrate peeling pin, which constitutes the peeling device 118 for the second cavity, corresponding to the second mold 2. Therefore, the second
The outer peripheral portion 7161 on the substrate non-bonding surface side is the second substrate 712
In the diametrical direction of the second substrate 712, the guide member 1 for the second substrate peeling pin is provided on the non-adhesive surface side of the second substrate 712 from the outermost periphery.
181.
【００３０】又、上記第２基板剥離ピン用ガイド部材１
１８１には、第２基板７１２の成形時において上記非接
着面７１３側より上記第２基板７１２の内周部分７１６
２の温度制御を行うため、冷却材としての、本実施形態
では水が供給及び排出される第２ガイド部材冷却用通路
１１８２が形成され、該第２ガイド部材冷却用通路１１
８２には第２基板用第１内周部温調装置１２４が接続さ
れている。ここで上記第２基板非接着面側内周部分７１
６２の温度制御は、上記第２基板剥離ピン用ガイド部材
１１８１に上記冷却材を供給することで、上記第２基板
剥離ピン用ガイド部材１１８１が温度制御されることで
なされる。又、上記第２基板非接着面側内周部分７１６
２とは、第２基板７１２の非接着面７１３側において上
記第２基板剥離ピン用ガイド部材１１７１に対応する部
分が相当する。尚、第１基板剥離ピン用ガイド部材１１
７１とは異なり、第２キャビティー１１２に面した、第
２基板剥離ピン用ガイド部材１１８１のキャビティー面
１１８１１には、上記リブ形成用のリブ用凹部は設けて
いない。又、本実施形態における成形装置１０１では、
第１キャビティー１１１は０．５７ｍｍの厚みにてなる
第１基板７１１を成形し、第２キャビティー１１２は
０．６ｍｍの厚みにてなる第２基板７１２を成形する。The guide member 1 for the second substrate peeling pin
181 includes an inner peripheral portion 716 of the second substrate 712 from the non-adhesive surface 713 side when the second substrate 712 is formed.
In this embodiment, a second guide member cooling passage 1182 for supplying and discharging water as a coolant is formed to perform the temperature control of the second guide member 2.
The first substrate inner peripheral temperature control device 124 for the second substrate is connected to 82. Here, the second substrate non-adhesive surface side inner peripheral portion 71
The temperature control of 62 is performed by supplying the coolant to the second substrate peeling pin guide member 1181 to control the temperature of the second substrate peeling pin guide member 1181. Also, the inner peripheral portion 716 of the second substrate non-adhesive surface side
2 corresponds to a portion on the non-adhesive surface 713 side of the second substrate 712 corresponding to the second substrate peeling pin guide member 1171. In addition, the guide member 11 for the first substrate peeling pin
Unlike 71, the rib recess for forming the rib is not provided on the cavity surface 11811 of the second substrate peeling pin guide member 1181 facing the second cavity 112. Further, in the molding apparatus 101 of the present embodiment,
The first cavity 111 forms a first substrate 711 having a thickness of 0.57 mm, and the second cavity 112 forms a second substrate 712 having a thickness of 0.6 mm.
【００３１】一方、第２金型１１４には、第１キャビテ
ィー１１１に対応し、かつ第１キャビティー１１１にて
形成される第１基板７１１の接着面７１４側に配置され
る第１基板接着面側金型１１４１と、該第１基板接着面
側金型１１４１に隣接して配置され上記第１基板７１１
の上記接着面７１４に記録情報を形成するスタンパ１１
４３を設けた第１基板スタンパ用金型１１４４とが組み
込まれる。上記第１基板接着面側金型１１４１には、第
１基板７１１の外周側から内周側へ、本実施形態では渦
巻き状に冷却材として本実施形態では水が流れるよう
に、第１基板接着面側冷却用通路１１４２が形成されて
いる。該第１基板接着面側冷却用通路１１４２には、上
記冷却材としての水を供給及び排出する、第１基板用第
２外周部温調装置１２５が接続されている。よって第１
基板７１１の成形時において、第１基板接着面側金型１
１４１の温度制御を行うことで第１基板スタンパ用金型
１１４４を介して上記接着面７１４側より上記第１基板
７１１の、図１１に示す接着面側外周部分７１７１の温
度制御を行うことができる。又、図示するように、成形
される第１基板７１１の接着面側内周部分７１７２に対
応して第２金型１１４には、第１キャビティー用射出装
置１１５を構成している第１キャビティー用射出ノズル
部材１１５１が設けられている。よって、上述の第１基
板接着面側外周部分７１７１とは、第１基板７１１の直
径方向において、第１基板７１１の最外周部から上記第
１キャビティー用射出ノズル部材１１５１に至るまでの
範囲に相当する。On the other hand, the second mold 114 is provided with a first substrate adhesive disposed on the adhesive surface 714 side of the first substrate 711 corresponding to the first cavity 111 and formed by the first cavity 111. The surface-side mold 1141 and the first substrate 711 disposed adjacent to the first substrate-bonding surface-side mold 1141.
Stamper 11 for forming recording information on the adhesive surface 714 of FIG.
The first substrate stamper mold 1144 provided with 43 is assembled. The first substrate bonding surface side mold 1141 is bonded to the first substrate 711 so that water flows as a coolant in the present embodiment from the outer peripheral side to the inner peripheral side of the first substrate 711 in a spiral shape in the present embodiment. A surface-side cooling passage 1142 is formed. The first substrate-adhering-surface-side cooling passage 1142 is connected to a first substrate second outer peripheral temperature controller 125 that supplies and discharges water as the above-described coolant. Therefore the first
When molding the substrate 711, the first substrate bonding surface side mold 1
By performing the temperature control of 141, the temperature of the outer peripheral portion 7171 of the first substrate 711 on the bonding surface side shown in FIG. 11 can be controlled from the bonding surface 714 side via the first substrate stamper mold 1144. . As shown in the figure, the second mold 114 is provided with the first cavity constituting the first cavity injection device 115 in correspondence with the inner peripheral portion 7172 of the first substrate 711 to be molded. A tee injection nozzle member 1151 is provided. Therefore, the above-mentioned first substrate bonding surface side outer peripheral portion 7171 is in a range from the outermost peripheral portion of the first substrate 711 to the first cavity injection nozzle member 1151 in the diameter direction of the first substrate 711. Equivalent to.
【００３２】又、上記第１キャビティー用射出ノズル部
材１１５１には、第１基板７１１の成形時において上記
接着面７１４側より上記第１基板７１１の接着面側内周
部分７１７２の温度制御を行うため、冷却材としての、
本実施形態では水が供給及び排出される第１ノズル部材
冷却用通路１１５２が形成され、該第１ノズル部材冷却
用通路１１５２には第１基板用第２内周部温調装置１２
７が接続されている。ここで上記第１基板接着面側内周
部分７１７２の温度制御は、上記第１キャビティー用射
出ノズル部材１１５１に上記冷却材を供給することで、
上記第１キャビティー用射出ノズル部材１１５１が温度
制御されることでなされる。又、上記第１基板接着面側
内周部分７１７２とは、第１基板７１１の接着面７１４
側において上記第１キャビティー用射出ノズル部材１１
５１に対応する部分が相当する。In addition, the temperature of the inner peripheral portion 7172 of the first substrate 711 on the bonding surface side of the first substrate 711 is controlled by the first cavity injection nozzle member 1151 from the bonding surface 714 side when the first substrate 711 is formed. Therefore, as a coolant,
In this embodiment, a first nozzle member cooling passage 1152 through which water is supplied and discharged is formed, and the first nozzle member cooling passage 1152 is provided in the second inner peripheral temperature control device 12 for the first substrate.
7 is connected. Here, the temperature of the inner peripheral portion 7172 on the first substrate bonding surface side is controlled by supplying the coolant to the first cavity injection nozzle member 1151.
This is performed by controlling the temperature of the first cavity injection nozzle member 1151. Further, the inner peripheral portion 7172 on the first substrate bonding surface side corresponds to the bonding surface 714 of the first substrate 711.
On the side, the first cavity injection nozzle member 11
The part corresponding to 51 corresponds.
【００３３】さらに第２金型１１４には、上述の第１キ
ャビティー１１１に対応して設けられた構成部分と同様
の構成が、以下に説明するように、第２キャビティー１
１２に対応して設けられている。即ち、第２金型１１４
には、第２キャビティー１１２に対応し、かつ第２キャ
ビティー１１２にて形成される第２基板７１２の接着面
７１４側に配置される第２基板接着面側金型１１４５
と、該第２基板接着面側金型１１４５に隣接して配置さ
れ上記第２基板７１２の上記接着面７１４に記録情報を
形成するスタンパ１１４７を設けた第２基板スタンパ用
金型１１４８とが組み込まれる。上記第２基板接着面側
金型１１４５には、第２基板７１２の外周側から内周側
へ、本実施形態では渦巻き状に冷却材として本実施形態
では水が流れるように、第２基板接着面側冷却用通路１
１４６が形成されている。該第２基板接着面側冷却用通
路１１４６には、上記冷却材としての水を供給及び排出
する、第２基板用第２外周部温調装置１２６が接続され
ている。よって第２基板７１２の成形時において、第２
基板接着面側金型１１４５の温度制御を行うことで第２
基板スタンパ用金型１１４８を介して上記接着面７１４
側より上記第２基板７１２の接着面側外周部分７１７１
の温度制御を行うことができる。又、図示するように、
成形される第２基板７１２の接着面側内周部分７１７２
に対応して第２金型１１４には、第２キャビティー用射
出装置１１６を構成している第２キャビティー用射出ノ
ズル部材１１６１が設けられている。よって、上述の第
２基板接着面側外周部分７１７１とは、第２基板７１２
の直径方向において、第２基板７１２の最外周部から上
記第２キャビティー用射出ノズル部材１１６１に至るま
での範囲に相当する。Further, the second mold 114 has the same configuration as that provided for the first cavity 111 as described below, as described below.
12 are provided. That is, the second mold 114
The second substrate bonding surface side mold 1145 corresponding to the second cavity 112 and disposed on the bonding surface 714 side of the second substrate 712 formed in the second cavity 112
And a second substrate stamper mold 1148 disposed adjacent to the second substrate adhesion surface side mold 1145 and provided with a stamper 1147 for forming recording information on the adhesion surface 714 of the second substrate 712. It is. The second substrate bonding surface side mold 1145 is bonded to the second substrate 712 so that water flows as a cooling agent in a spiral form from the outer peripheral side to the inner peripheral side of the second substrate 712 in the present embodiment. Surface side cooling passage 1
146 are formed. The second substrate bonding surface side cooling passage 1146 is connected to a second substrate second outer peripheral temperature control device 126 for supplying and discharging the water as the coolant. Therefore, when molding the second substrate 712, the second
By controlling the temperature of the mold 1145 on the substrate bonding surface side, the second
The bonding surface 714 via the substrate stamper mold 1148
Side outer peripheral portion 7171 of the second substrate 712 on the bonding surface side
Temperature control can be performed. Also, as shown
Adhesive surface side inner peripheral portion 7172 of second substrate 712 to be molded
Accordingly, the second mold 114 is provided with a second cavity injection nozzle member 1161 that constitutes the second cavity injection device 116. Therefore, the above-described outer peripheral portion 7171 on the second substrate bonding surface side corresponds to the second substrate 712.
In the diameter direction of the second substrate 712 to the range from the outermost peripheral portion of the second substrate 712 to the second cavity injection nozzle member 1161.
【００３４】又、上記第２キャビティー用射出ノズル部
材１１６１には、第２基板７１２の成形時において上記
接着面７１４側より上記第２基板７１２の接着面側内周
部分７１７２の温度制御を行うため、冷却材として本実
施形態では水が供給及び排出される第２ノズル部材冷却
用通路１１６２が形成され、該第２ノズル部材冷却用通
路１１６２には第２基板用第２内周部温調装置１２８が
接続されている。ここで上記第２基板接着面側内周部分
７１７２の温度制御は、上記第２キャビティー用射出ノ
ズル部材１１６１に上記冷却材を供給することで、上記
第２キャビティー用射出ノズル部材１１６１が温度制御
されることでなされる。又、上記第２基板接着面側内周
部分７１７２とは、第２基板７１２の接着面７１４側に
おいて上記第２キャビティー用射出ノズル部材１１６１
に対応する部分が相当する。The second cavity injection nozzle member 1161 controls the temperature of the inner peripheral portion 7172 of the second substrate 712 on the bonding surface side from the bonding surface 714 during the molding of the second substrate 712. Therefore, in the present embodiment, a second nozzle member cooling passage 1162 through which water is supplied and discharged as a coolant is formed. Device 128 is connected. Here, the temperature of the inner peripheral portion 7172 on the second substrate bonding surface side is controlled by supplying the coolant to the second cavity injection nozzle member 1161 so that the second cavity injection nozzle member 1161 is heated. It is done by being controlled. Further, the second substrate bonding surface side inner peripheral portion 7172 is the second cavity injection nozzle member 1161 on the bonding surface 714 side of the second substrate 712.
The part corresponding to.
【００３５】第１キャビティー１１１側に備わる上記第
１基板用第１外周部温調装置１２１及び上記第１基板用
第１内周部温調装置１２３並びに上記第１基板用第２外
周部温調装置１２５及び上記第１基板用第２内周部温調
装置１２７、さらに第２キャビティー１１２側に備わる
上記第２基板用第１外周部温調装置１２２及び上記第２
基板用第１内周部温調装置１２４並びに上記第２基板用
第２外周部温調装置１２６及び上記第２基板用第２内周
部温調装置１２８は、図２に示すように、成形装置用制
御部１０２に接続され、それぞれ動作制御がなされる。
即ち、成形装置用制御部１０２により、上記第１基板用
第１外周部温調装置１２１及び上記第１基板用第２外周
部温調装置１２５の動作制御がなされ第１基板７１１の
成形において第１基板７１１の外周部分７１６１，７１
７１の温度制御が行われるとともに、上記第１基板用第
１内周部温調装置１２３及び上記第１基板用第２内周部
温調装置１２７の動作制御がなされ第１基板７１１の成
形において第１基板７１１の内周部分７１６２，７１７
２の温度制御が行われる。したがって、第１基板７１１
を成形するに当たり、第１基板７１１の内、外周、即ち
全体に渡り温度制御がなされるので、成形時に第１基板
７１１に生じる応力を制御することができる。The first outer peripheral temperature controller 121 for the first substrate, the first inner peripheral temperature controller 123 for the first substrate, and the second outer peripheral temperature for the first substrate provided on the first cavity 111 side. Adjusting device 125 and the second inner peripheral temperature adjusting device 127 for the first substrate, and further, the second outer peripheral temperature adjusting device 122 for the second substrate provided on the second cavity 112 side, and the second
As shown in FIG. 2, the first inner peripheral temperature adjusting device 124 for the substrate, the second outer peripheral temperature adjusting device 126 for the second substrate, and the second inner peripheral temperature adjusting device 128 for the second substrate are formed as shown in FIG. The operation control unit 102 is connected to the device control unit 102 and performs operation control.
That is, the operation of the first peripheral temperature control device 121 for the first substrate and the second peripheral temperature control device 125 for the first substrate is controlled by the control unit 102 for the molding device. Outer peripheral portions 7161 and 71 of one substrate 711
The temperature control of the first substrate 71 is performed, and the operation of the first inner peripheral temperature controller 123 for the first substrate and the second inner peripheral temperature controller 127 for the first substrate are controlled. Inner peripheral portion 7162, 717 of first substrate 711
2 is performed. Therefore, the first substrate 711
In molding, the temperature control is performed on the inner and outer circumferences of the first substrate 711, that is, over the entirety, so that the stress generated in the first substrate 711 during the molding can be controlled.
【００３６】尚、第１基板７１１の上記外周部分７１６
１，７１７１とは、上述した第１基板非接着面側外周部
分及び第１基板接着面側外周部分に対応する領域であ
り、情報記録可能領域を含む領域に相当する。又、第１
基板７１１の上記内周部分７１６２，７１７２とは、当
該第１基板７１１の中央部分であって上述した第１基板
非接着面側内周部分７１６２及び第１基板接着面側内周
部分７１７２に対応する領域であり、上記情報記録可能
領域を含まない情報記録不可能領域に相当する。The outer peripheral portion 716 of the first substrate 711
1,7171 is an area corresponding to the above-described outer peripheral portion on the first substrate non-adhesive surface side and the outer peripheral portion on the first substrate adhesive surface side, and corresponds to an area including an information recordable area. Also, the first
The inner peripheral portions 7162 and 7172 of the substrate 711 are the central portion of the first substrate 711 and correspond to the first substrate non-bonding surface side inner peripheral portion 7162 and the first substrate bonding surface side inner peripheral portion 7172 described above. And corresponds to an information non-recordable area that does not include the information recordable area.
【００３７】上述の第１キャビティー１１１の場合と同
様に第２キャビティー１１２についても、成形装置用制
御部１０２により、上記第２基板用第１外周部温調装置
１２２及び上記第２基板用第２外周部温調装置１２６の
動作制御がなされ第２基板７１２の成形において第２基
板７１２の外周部分７１６１，７１７１の温度制御が行
われるとともに、上記第２基板用第１内周部温調装置１
２４及び上記第２基板用第２内周部温調装置１２８の動
作制御がなされ第２基板７１２の成形において第２基板
７１２の内周部分７１６２，７１７２の温度制御が行わ
れる。したがって、第２基板７１２を成形するに当た
り、第２基板７１２の内、外周、即ち全体に渡り温度制
御がなされるので、成形時に第２基板７１２に生じる応
力を制御することができる。又、第２基板７１２の上記
外周部分７１６１，７１７１とは、上述した第２基板非
接着面側外周部分７１６１及び第２基板接着面側外周部
分７１７１に対応する領域であり、情報記録可能領域を
含む領域に相当する。又、第２基板７１２の上記内周部
分７１６２，７１７２とは、当該第２基板７１２の中央
部分であって上述した第２基板非接着面側内周部分７１
６２及び第２基板接着面側内周部分７１７２に対応する
領域であり、上記情報記録可能領域を含まない情報記録
不可能領域に相当する。As in the case of the above-described first cavity 111, the second cavity 112 is also controlled by the molding apparatus control section 102 by the first outer peripheral temperature controller 122 for the second substrate and the second substrate 112. The operation of the second outer peripheral temperature control device 126 is controlled to control the temperature of the outer peripheral portions 7161 and 7171 of the second substrate 712 during the molding of the second substrate 712, and the first inner peripheral temperature control for the second substrate is performed. Apparatus 1
24 and the operation of the second inner peripheral temperature control device 128 for the second substrate are controlled, and the temperature of the inner peripheral portions 7162 and 7172 of the second substrate 712 are controlled in molding the second substrate 712. Therefore, when forming the second substrate 712, the temperature is controlled over the inside and the outer periphery of the second substrate 712, that is, over the whole, so that the stress generated in the second substrate 712 during the molding can be controlled. The outer peripheral portions 7161 and 7171 of the second substrate 712 are regions corresponding to the outer peripheral portion 7161 on the second substrate non-adhesive surface side and the outer peripheral portion 7171 on the second substrate adhesive surface side. Area. The inner peripheral portions 7162 and 7172 of the second substrate 712 are the central portion of the second substrate 712 and the inner peripheral portion 71 of the second substrate non-bonding surface.
It is an area corresponding to 62 and the inner peripheral portion 7172 on the second substrate bonding surface side, and corresponds to an information non-recordable area that does not include the information recordable area.
【００３８】上述したように成形装置用制御部１０２を
設けたことによって、第１基板７１１と第２基板７１２
とについて、成形時の温度制御をそれぞれ独立して制御
することが可能であり、かつ、第１基板７１１及び第２
基板７１２を成形するとき、両基板に生じる応力が両基
板で同一、又は近似するように、上記第１基板用第１外
周部温調装置１２１、上記第１基板用第１内周部温調装
置１２３、上記第１基板用第２外周部温調装置１２５、
上記第１基板用第２内周部温調装置１２７、上記第２基
板用第１外周部温調装置１２２、上記第２基板用第１内
周部温調装置１２４、上記第２基板用第２外周部温調装
置１２６、及び上記第２基板用第２内周部温調装置１２
８の内、必要な装置同士を関連つけて動作制御すること
が可能となる。その結果、第１基板７１１及び第２基板
７１２に生じる応力を両基板で同一、又は近似させるこ
とができ、第１基板７１１及び第２基板７１２に生じる
反り方向及びその反り量を両基板で同一、又は近似させ
ることができる。又、本実施形態では、成形装置用制御
部１０２は、後述の検査装置５０１からのフィードバッ
ク制御により制御装置６０１からの命令に従い、第１基
板７１１及び第２基板７１２に生じる応力を両基板で同
一、又は近似させることで、第１基板７１１及び第２基
板７１２に生じる反り方向及びその反り量を両基板で同
一、又は近似するように、上記温調装置１２１〜１２８
の動作制御を行うこともできる。By providing the molding apparatus control unit 102 as described above, the first substrate 711 and the second substrate 712 are provided.
And the temperature control during molding can be controlled independently of each other, and the first substrate 711 and the second
When the substrates 712 are formed, the first outer peripheral temperature controller 121 for the first substrate and the first inner peripheral temperature controller for the first substrate are so formed that the stresses generated on the two substrates are the same or similar. Device 123, the above-described second outer peripheral temperature control device 125 for the first substrate,
The first inner peripheral temperature controller 127 for the first substrate, the first outer peripheral temperature controller 122 for the second substrate, the first inner peripheral temperature controller 124 for the second substrate, and the second inner peripheral temperature controller 124 for the second substrate. 2 outer peripheral temperature controller 126 and second inner peripheral temperature controller 12 for the second substrate
8, the operation can be controlled by associating necessary devices with each other. As a result, the stress generated in the first substrate 711 and the second substrate 712 can be the same or approximated in both the substrates, and the warp direction and the amount of the warp generated in the first substrate 711 and the second substrate 712 can be the same in both the substrates. Or an approximation. Further, in the present embodiment, the molding device control unit 102 applies the same stress to the first substrate 711 and the second substrate 712 by the feedback control from the inspection device 501, which will be described later, according to the instruction from the control device 601. Or by approximating the temperature control devices 121 to 128 so that the warping direction and the amount of warpage generated in the first substrate 711 and the second substrate 712 are the same or similar between the two substrates.
Operation control can also be performed.
【００３９】上記成形装置用制御部１０２による各温調
装置１２１〜１２８に対する制御動作と、第１基板７１
１及び第２基板７１２に生じる反り方向及びその反り量
との関係について、より詳しく説明する。一般的に、光
ディスクを構成する基板を成形するとき、基板の厚み方
向において温度勾配をつけて成形したとき、例えば該基
板の表面側の温度に比して裏面側の温度を高くして成形
したとき、成形装置から取り出した当該基板では、上記
表裏面の温度差に起因して、上記表面側が上記裏面側に
比べて時間的に早く硬化が完了し、上記裏面側は上記表
面側の硬化完了後でも硬化が進行している状態となる。
基板形成用の樹脂材は硬化するに従い収縮するので、上
記表面側の硬化完了後においても上記裏面側が硬化を続
行することで、上記表面側に比べて上記裏面側はさらに
収縮することになる。よって、基板は、上記裏面側が内
側となるようにして傘形に反る。The control operation of the temperature control devices 121 to 128 by the molding device control unit 102 and the first substrate 71
The relationship between the warping direction generated in the first and second substrates 712 and the amount of warpage will be described in more detail. In general, when molding a substrate constituting an optical disc, when molding with a temperature gradient in the thickness direction of the substrate, for example, molding is performed by increasing the temperature on the back side compared to the temperature on the front side of the substrate. At this time, in the substrate taken out of the molding apparatus, due to the temperature difference between the front and back surfaces, the front side completes curing earlier than the back side, and the back side completes curing of the front side. Even after that, the curing is in progress.
Since the resin material for forming the substrate shrinks as it cures, the back side continues to cure even after the completion of the curing of the front side, so that the back side further shrinks compared to the front side. Therefore, the substrate is warped in an umbrella shape such that the back side is inside.
【００４０】本実施形態では、このような現象を利用
し、第１基板７１１及び第２基板７１２の両方が同方向
でかつ同量の反りを意図的に生じさせるように各温調装
置１２１〜１２８の制御を行う。即ち、本実施形態で
は、成形装置１０１における成形動作時に、第１基板７
１１及び第２基板７１２の接着面７１４側の第２温度に
対して非接着面７１３側の第１温度が高くなるように
し、換言すると第２金型１１４の第２温度に対して第１
金型１１３の第１温度が高くなるようにし、かつ上記第
１温度と上記第２温度との差が強制反り発生温度差とな
るように、各温調装置１２１〜１２８の制御が行われ
る。ここで上記強制反り発生温度差は、図９に示すよう
に、成形後に当該成形装置１０１から取り出された上記
基板７１１、７１２の上記内周部分が上記外周部分に比
して第２金型１１４側に突状となる、換言すると基板７
１１、７１２の非接着面７１３側が内側となる傘形に反
る温度差である。In the present embodiment, utilizing such a phenomenon, each of the temperature control devices 121 to 121 is designed so that both the first substrate 711 and the second substrate 712 intentionally generate the same amount of warpage in the same direction. 128. In other words, in the present embodiment, the first substrate 7 is
The first temperature on the non-bonding surface 713 side is higher than the second temperature on the bonding surface 714 side of the first and second substrates 712, in other words, the first temperature is higher than the second temperature of the second mold 114.
The temperature control devices 121 to 128 are controlled such that the first temperature of the mold 113 is increased and the difference between the first temperature and the second temperature is a forced warpage occurrence temperature difference. Here, as shown in FIG. 9, the forced warpage occurrence temperature difference is such that the inner peripheral portions of the substrates 711 and 712 taken out of the molding apparatus 101 after the molding have a smaller height than the outer peripheral portion. Side, in other words, the substrate 7
This is a temperature difference warped in an umbrella shape in which the non-adhesive surface 713 side of 11, 712 is inside.
【００４１】又、上述したように第１キャビティー１１
１にて成形される第１基板７１１と第２キャビティー１
１２にて成形される第２基板７１２とでは、厚み及び上
記リブの有無の差異がある。よって、第１基板７１１及
び第２基板７１２の両方に同方向でかつ同量の反りを生
じさせるため、本実施形態における上記温調装置１２１
〜１２８の制御では、さらに、第１基板７１１側におけ
る温調装置１２１，１２３，１２５，１２７と、第２基
板７１２側における温調装置１２２，１２４，１２６，
１２８とでは異なる温度制御が行われる。Also, as described above, the first cavity 11
First substrate 711 and second cavity 1 molded in
There is a difference between the thickness and the presence or absence of the ribs with respect to the second substrate 712 molded in Step 12. Therefore, in order to cause both the first substrate 711 and the second substrate 712 to generate the same amount of warpage in the same direction, the temperature controller 121 according to the present embodiment is used.
In the control of to 128, the temperature control devices 121, 123, 125, and 127 on the first substrate 711 side and the temperature control devices 122, 124, 126, and
A temperature control different from that of the 128 is performed.
【００４２】さらに本実施形態では、第１基板７１１及
び第２基板７１２について、内周部分７１６２，７１７
２の内周部温度に比して外周部分７１６１，７１７１の
外周部温度を高くしかつ上記内周部温度と上記外周部温
度との差を平坦部成形用温度差になるように、上記温調
装置１２１〜１２８の温度制御が行っている。即ち、後
述するように、第１基板７１１及び第２基板７１２を貼
り合わすため、当該第１基板７１１及び第２基板７１２
の接着面７１４の中央部分には接着剤４０２１が塗布さ
れ、いわゆるスピンコート法により接着面７１４に均一
に拡散される。このとき、各基板７１１，７１２が、図
９に示すような傘形では接着剤４０２１が塗布される上
記中央部分も平坦ではなく傾斜しており、塗布された接
着剤４０２１が拡散される前に局所的に外周方向へ流れ
出す場合もあり、接着面７１４の全面に接着剤４０２１
が均一に塗布されない場合も考えられる。そこで本実施
形態では、成形後に当該成形装置１０１から取り出した
上記基板７１１，７１２に貼り合せ用の接着剤４０２１
を塗布した際に接着剤４０２１が基板７１１，７１２の
直径方向へ流出するのを防止する流出防止部７１８を形
成するように、上記温調装置１２１〜１２８の温度制御
が行われる。又、このような流出防止部７１８を形成す
る上記内周部温度と上記外周部温度との差が上記平坦部
成形用温度差である。Further, in the present embodiment, the inner peripheral portions 7162 and 717 of the first substrate 711 and the second substrate 712
2 so that the outer peripheral temperature of the outer peripheral portions 7161 and 7171 is higher than the inner peripheral temperature of 2 and the difference between the inner peripheral temperature and the outer peripheral temperature becomes a flat part forming temperature difference. The temperature control of the adjusting devices 121 to 128 is performed. That is, as will be described later, the first substrate 711 and the second substrate 712 are attached in order to bond the first substrate 711 and the second substrate 712 together.
The adhesive 4021 is applied to the central portion of the adhesive surface 714 of, and is uniformly spread on the adhesive surface 714 by a so-called spin coating method. At this time, in the case of the umbrella shape as shown in FIG. 9, each of the substrates 711 and 712 has an inclined central portion where the adhesive 4021 is applied instead of being flat. In some cases, the adhesive 4021 may locally flow in the outer peripheral direction, and the adhesive 4021
May not be applied uniformly. Therefore, in the present embodiment, an adhesive 4021 for bonding to the substrates 711 and 712 taken out from the molding apparatus 101 after molding.
The temperature control of the temperature control devices 121 to 128 is performed so as to form an outflow preventing portion 718 for preventing the adhesive 4021 from flowing out in the diameter direction of the substrates 711 and 712 when the is applied. The difference between the inner peripheral temperature and the outer peripheral temperature forming the outflow preventing portion 718 is the flat portion forming temperature difference.
【００４３】上述した、強制反り発生温度差、第１基板
７１１と第２基板７１２とに対する温度制御、及び平坦
部成形用温度差について、本実施形態における一例を以
下に説明する。第１基板７１１を成形する第１キャビテ
ィー１１１側について説明する。成形装置用制御部１０
２によって第１基板用第１外周部温調装置１２１が制御
されて、第１基板７１１の非接着面７１３の外周部分７
１６１は、成形時、約９０〜１２０℃の温度に設定され
る。本実施形態では約１００℃に設定されている。一
方、成形装置用制御部１０２によって第１基板用第２外
周部温調装置１２５が制御されて、第１基板７１１の接
着面７１４の外周部分７１７１は、成形時、約９０〜１
２０℃の温度に設定される。本実施形態では約９０℃に
設定されている。このように、本実施形態では、成形時
において、第１金型１１３側に位置する非接着面側外周
部分７１６１の温度を、第２金型１１４側に位置する接
着面側外周部分７１７１の温度に比べて高くし、上記強
制反り発生温度差は約１０℃に設定している。上記外周
部分７１６１，７１７１において上記強制反り発生温度
差は、約７〜１４℃であり、このような強制反り発生温
度差が生じるように、上記非接着面側外周部分７１６１
と上記接着面側外周部分７１７１との温度が設定され
る。尚、上記強制反り発生温度差は、基板７１１の内周
部分７１６２，７１７２に対しても設定することができ
るが、面積的に外周部分７１６１，７１７１の方が内周
部分７１６２，７１７２よりも大きいので、上記外周部
分７１６１，７１７１に対して上記強制反り発生温度差
を設定した方がより効果的に強制的な反りを生じさせる
ことができる。An example of this embodiment will be described below with respect to the above-described forced warpage generation temperature difference, the temperature control for the first substrate 711 and the second substrate 712, and the flat portion forming temperature difference. The first cavity 111 side for molding the first substrate 711 will be described. Control unit 10 for molding equipment
2 controls the first outer peripheral temperature control device 121 for the first substrate, and the outer peripheral portion 7 of the non-adhesive surface 713 of the first substrate 711.
161 is set to a temperature of about 90 to 120 ° C. during molding. In this embodiment, the temperature is set to about 100 ° C. On the other hand, the second peripheral temperature control device 125 for the first substrate is controlled by the molding device control unit 102 so that the peripheral portion 7171 of the bonding surface 714 of the first substrate 711 is about 90 to 1 at the time of molding.
The temperature is set at 20 ° C. In this embodiment, the temperature is set to about 90 ° C. As described above, in the present embodiment, at the time of molding, the temperature of the non-adhesive surface-side outer peripheral portion 7161 located on the first mold 113 side is changed to the temperature of the adhesive surface-side outer peripheral portion 7171 located on the second mold 114 side. , And the forced warpage generation temperature difference is set to about 10 ° C. The temperature difference between the forced warpages at the outer peripheral portions 7161 and 7171 is about 7-14 ° C., and the non-adhesion surface side outer peripheral portion 7161 is generated so that such a temperature difference at the forced warp occurs.
And the temperature of the bonding surface side outer peripheral portion 7171 are set. The forced warpage generation temperature difference can be set for the inner peripheral portions 7162 and 7172 of the substrate 711, but the outer peripheral portions 7161 and 7171 are larger in area than the inner peripheral portions 7162 and 7172. Therefore, the forced warpage can be more effectively generated by setting the forced warpage occurrence temperature difference with respect to the outer peripheral portions 7161 and 7171.
【００４４】上記流出防止部７１８を形成するために
は、上記内周部分７１６２，７１７２に対して以下の温
度制御を行う。即ち、成形装置用制御部１０２によって
第１基板用第１内周部温調装置１２３が制御されて、第
１基板７１１の非接着面７１３の内周部分７１６２は、
成形時、約２０〜９０℃の温度に設定される。本実施形
態では約５０℃に設定されている。一方、成形装置用制
御部１０２によって第１基板用第２内周部温調装置１２
７が制御されて、第１基板７１１の接着面７１４の内周
部分７１７２は、成形時、約２０〜９０℃の温度に設定
される。本実施形態では約２０℃に設定されている。こ
のように、本実施形態では、成形時において、第１金型
１１３側に位置する非接着面側内周部分７１６２の温度
を、第２金型１１４側に位置する接着面側内周部分７１
７２の温度に比べて高くし、上記強制反り発生温度差は
約３０℃に設定している。このように、流出防止部７１
８を形成するための平坦部成形用温度差は、０〜約３０
℃に設定され、このような平坦部成形用温度差が生じる
ように、上記非接着面側内周部分７１６２と上記接着面
側内周部分７１７２との温度が設定される。尚、非接着
面側内周部分７１６２と接着面側内周部分７１７２との
温度は同じであってもよいが、同温のときには流出防止
部７１８は成形されず、反り後の基板７１１は、図９に
示すような傘形形状となる。上記の範囲内において平坦
部成形用温度差が大きい程、流出防止部７１８がより平
坦になる傾向にある。In order to form the outflow prevention portion 718, the following temperature control is performed on the inner peripheral portions 7162 and 7172. That is, the first substrate first inner peripheral temperature control device 123 is controlled by the molding device controller 102, and the inner peripheral portion 7162 of the non-adhesive surface 713 of the first substrate 711 is
During molding, the temperature is set to about 20 to 90 ° C. In this embodiment, the temperature is set to about 50 ° C. On the other hand, the second inner peripheral temperature control device 12 for the first substrate is
7 is controlled, and the inner peripheral portion 7172 of the bonding surface 714 of the first substrate 711 is set to a temperature of about 20 to 90 ° C. during molding. In this embodiment, the temperature is set to about 20 ° C. As described above, in the present embodiment, at the time of molding, the temperature of the non-adhesive surface-side inner peripheral portion 7162 located on the first mold 113 side is changed to the adhesive surface-side inner peripheral portion 71 located on the second mold 114 side.
The temperature is set to be higher than the temperature of 72, and the forced warpage generation temperature difference is set to about 30 ° C. Thus, the outflow prevention unit 71
8 is 0 to about 30.
° C, and the temperatures of the non-adhesive surface side inner peripheral portion 7162 and the adhesive surface side inner peripheral portion 7172 are set such that such a flat portion forming temperature difference is generated. The temperature of the non-adhesive surface side inner peripheral portion 7162 and the temperature of the adhesive surface side inner peripheral portion 7172 may be the same, but at the same temperature, the outflow prevention portion 718 is not formed, and the warped substrate 711 is It has an umbrella shape as shown in FIG. Within the above range, the larger the temperature difference for forming a flat portion, the more the outflow prevention portion 718 tends to be flatter.
【００４５】第２基板７１２を成形する第２キャビティ
ー１１２側についても、上述した第１キャビティー１１
１側と同様の温調が行われる。即ち、上記強制反り発生
温度差を生じさせるため、成形装置用制御部１０２によ
って第２基板用第１外周部温調装置１２２及び第２基板
用第２外周部温調装置１２６が制御されて、成形時にお
いて、第２基板７１２の非接着面７１３の外周部分７１
６１が接着面７１４の外周部分７１７１に対して高温と
なり、外周部分７１６１と外周部分７１７１との間には
約７〜１４℃の強制反り発生温度差が設定される。但
し、上述した第１基板７１１と第２基板７１２との相違
点に起因して、第１基板７１１の場合には外周部分７１
６１，７１７１の平均温度が約９５℃であったのに対
し、第２基板７１２の場合には外周部分７１６１，７１
７１の平均温度が約９０℃になるように、つまり第１基
板７１１の外周部分７１６１，７１７１に比べて第２基
板７１２の外周部分７１６１，７１７１の温度が低くな
るように、第２基板用第１外周部温調装置１２２及び第
２基板用第２外周部温調装置１２６が制御される。尚、
本出願人の行った実験によれば、第１基板７１１の外周
部分７１６１，７１７１と、第２基板７１２の外周部分
７１６１，７１７１との温度差について、２〜８℃の範
囲では、温度差が大きくなるほど、第１基板７１１及び
第２基板７１２を貼り合わせた後の光ディスクにおける
ラジアル方向のチルト角度を小さくできる傾向があっ
た。The second cavity 112 for molding the second substrate 712 also has the same structure as the first cavity 11 described above.
The same temperature control as in the first side is performed. That is, in order to generate the forced warp occurrence temperature difference, the molding apparatus control unit 102 controls the second outer peripheral temperature controller 122 for the second substrate and the second outer peripheral temperature controller 126 for the second board, At the time of molding, the outer peripheral portion 71 of the non-adhesive surface 713 of the second substrate 712
The temperature of the outer peripheral portion 7171 of the bonding surface 714 becomes higher than that of the outer peripheral portion 7171, and a forced warpage generation temperature difference of approximately 7-14 ° C. is set between the outer peripheral portion 7161 and the outer peripheral portion 7171. However, due to the difference between the first substrate 711 and the second substrate 712, in the case of the first substrate 711, the outer peripheral portion 71
While the average temperature of 61 and 7171 was about 95 ° C., the outer peripheral portions 7161 and 71
The temperature of the outer peripheral portions 7161 and 7171 of the second substrate 712 is lower than the outer peripheral portions 7161 and 7171 of the first substrate 711 so that the average temperature of the first substrate 71 is approximately 90 ° C. The first outer peripheral temperature adjusting device 122 and the second outer peripheral temperature adjusting device 126 for the second substrate are controlled. still,
According to an experiment conducted by the present applicant, the temperature difference between the outer peripheral portions 7161 and 7171 of the first substrate 711 and the outer peripheral portions 7161 and 7171 of the second substrate 712 is within a range of 2 to 8 ° C. As the size becomes larger, the tilt angle in the radial direction of the optical disc after bonding the first substrate 711 and the second substrate 712 tends to be smaller.
【００４６】又、第１基板７１１の場合と同様に、０〜
約３０℃の上記平坦部成形用温度差が第２基板７１２の
内周部分７１６２，７１７２に生じるように、成形装置
用制御部１０２によって第２基板用第１内周部温調装置
１２４及び第２基板用第２内周部温調装置１２８が制御
される。尚、内周部分７１６２，７１７２については、
第１基板７１１と第２基板７１２との平均温度を変える
ための制御は行っていない。Also, as in the case of the first substrate 711, 0 to
The forming apparatus control unit 102 controls the second substrate first inner peripheral temperature control device 124 and the second substrate The second substrate peripheral temperature control device 128 for two substrates is controlled. In addition, about the inner peripheral part 7162, 7172,
Control for changing the average temperature of the first substrate 711 and the second substrate 712 is not performed.
【００４７】各温調装置１２１〜１２８に対して、上述
した、強制反り発生温度差設定用制御、平坦部成形用温
度差設定用制御、及び第１基板７１１と第２基板７１２
との相違点に起因する制御を行うことで、これらの制御
が実行され成形された第１基板７１１及び第２基板７１
２を、後述するように貼り合わせた後の光ディスクにお
けるラジアル方向のチルト角度は、ＤＶＤの規格値であ
る±０．８度を十分に満足することができる。尚、上記
０．８度の±とは、基板７０１の上記内周部分が上記外
周部分に比して第２金型１１４側に突状となる、換言す
ると基板７０１の非接着面７１３側を内側として傘形に
反った場合を＋、この反対で、基板７０１の接着面７１
４側を内側として傘形に反った場合を−としている。For each of the temperature control devices 121 to 128, the control for setting the temperature difference for forcibly generating a warp, the control for setting the temperature difference for forming a flat portion, the first substrate 711 and the second substrate 712 are performed.
The first substrate 711 and the second substrate 71 formed by executing these controls by performing the control resulting from the difference from
As described later, the tilt angle in the radial direction of the optical disc after laminating No. 2 can sufficiently satisfy ± 0.8 degrees which is the standard value of DVD. The above-mentioned ± 0.8 degrees means that the inner peripheral portion of the substrate 701 is protruded toward the second mold 114 side relative to the outer peripheral portion, in other words, the non-adhesive surface 713 side of the substrate 701 is The case where the inner side is warped in an umbrella shape is +, and the other side is the bonding surface 71 of the substrate 701.
The case in which the four sides are inside and warped in an umbrella shape is defined as-.
【００４８】又、各温調装置１２１〜１２８に対する、
上述の強制反り発生温度差設定用制御、平坦部成形用温
度差設定用制御、及び第１基板７１１と第２基板７１２
との相違点に起因する制御に関するそれぞれの数値は、
ＲＯＭ用のＤＶＤを製造する場合における一例であり、
ＲＡＭ用のＤＶＤを製造する場合等、製造されるＤＶＤ
の用途に応じて、上記規格値±０．８度を十分に満足す
るように、数値は適宜変更される。尚、上述の説明で
は、ラジアル方向のチルト角度について述べた。即ち、
本実施形態では、タンジェンシャル方向におけるチルト
角度の制御は行っていない。Further, for each of the temperature control devices 121 to 128,
The control for setting the temperature difference for generating the forced warpage, the control for setting the temperature difference for forming the flat portion, and the first substrate 711 and the second substrate 712.
Each value related to the control resulting from the difference from
This is an example in the case of manufacturing a DVD for ROM,
DVD to be manufactured, such as when manufacturing DVD for RAM
The numerical value is appropriately changed depending on the use of the device so that the above-mentioned standard value ± 0.8 degrees is sufficiently satisfied. In the above description, the tilt angle in the radial direction has been described. That is,
In the present embodiment, the control of the tilt angle in the tangential direction is not performed.
【００４９】上述したように、第１基板７１１及び第２
基板７１２に生じる応力を両基板で同一、又は近似さ
せ、貼り合せ後の光ディスクにおけるラジアル方向のチ
ルト角度について上記±０．８度を十分に満足させるた
めに、本実施形態では、上記温調装置１２１〜１２８の
動作制御プログラムが成形装置用制御部１０２に備えた
記憶装置１０２１に格納されている。尚、上記動作制御
プログラムは、ＣＤ−ＲＯＭ等の記録媒体にて成形装置
用制御部１０２へ供給してもよいし、電気通信回線を通
じて供給するようにしても良い。As described above, the first substrate 711 and the second
In order to make the stress generated in the substrate 712 identical or similar between the two substrates, and to sufficiently satisfy the above-mentioned ± 0.8 degrees in the radial tilt angle of the optical disc after bonding, in the present embodiment, the temperature control device is used. The operation control programs 121 to 128 are stored in a storage device 1021 provided in the molding device control unit 102. The operation control program may be supplied to the molding apparatus control unit 102 in a recording medium such as a CD-ROM, or may be supplied through an electric communication line.
【００５０】尚、上記第１キャビティー用射出装置１１
５及び第２キャビティー用射出装置１１６は、上記第１
キャビティー１１１及び第２キャビティー１１２へ樹脂
材を射出する装置であり、それぞれ公知の装置構成を有
する。又、第１キャビティー用射出装置１１５及び第２
キャビティー用射出装置１１６は、本実施形態では、上
記第１キャビティー１１１及び第２キャビティー１１２
に対して同一条件にて樹脂材の射出を行っている。又、
上記第１キャビティー用剥離装置１１７及び第２キャビ
ティー用剥離装置１１８は、成形された第１基板７１１
及び第２基板７１２に対して中央部分に穴をあけ、さら
に、第１基板非接着面形成用金型１１３１及び第２基板
非接着面形成用金型１１３３から第１基板７１１及び第
２基板７１２を剥離させる装置であり、それぞれ公知の
装置構成を有する。これらの第１キャビティー用射出装
置１１５、第２キャビティー用射出装置１１６、第１キ
ャビティー用剥離装置１１７、及び第２キャビティー用
剥離装置１１８、並びに上記昇降装置１３１は、それぞ
れ制御装置６０１にて動作制御される。The first cavity injection device 11
5 and the second cavity injection device 116 are connected to the first
This is a device for injecting a resin material into the cavity 111 and the second cavity 112, each having a known device configuration. Also, the first cavity injection device 115 and the second
In the present embodiment, the cavity injection device 116 includes the first cavity 111 and the second cavity 112.
Are injected under the same conditions. or,
The first cavity peeling device 117 and the second cavity peeling device 118 are used to form the first substrate 711.
Then, a hole is formed at the center portion of the second substrate 712, and further, the first substrate 711 and the second substrate 712 are formed from the first substrate non-bonding surface forming die 1131 and the second substrate non-bonding surface forming die 1133. And has a known device configuration. The first cavity injection device 115, the second cavity injection device 116, the first cavity peeling device 117, the second cavity peeling device 118, and the elevating device 131 each include a control device 601. The operation is controlled by.
【００５１】又、上記第１基板非接着面側冷却用通路１
１３２、第１基板接着面側冷却用通路１１４２、第２基
板非接着面側冷却用通路１１３４、及び第２基板接着面
側冷却用通路１１４６は、上述のように本実施形態では
渦巻き状に形成したが、これに限定されるものではな
く、冷却効率等の観点から種々の経路形態から選択する
ことができる。Further, the cooling passage 1 for the first substrate non-adhesive surface side
132, the first substrate bonding surface side cooling passage 1142, the second substrate non-bonding surface side cooling passage 1134, and the second substrate bonding surface side cooling passage 1146 are formed in a spiral shape in the present embodiment as described above. However, the present invention is not limited to this, and various routes can be selected from the viewpoint of cooling efficiency and the like.
【００５２】次に貼り合せ装置４０１について説明す
る。上記貼り合せ装置４０１は、上記成形装置１０１に
て成形されたそれぞれの上記基板７１１，７１２につい
て、上述のように上記応力が残存した状態にて、かつ貼
り合される基板７１１、７１２におけるそれぞれの上記
応力が上記各基板７０１を貼り合わすことにより相殺さ
れる相殺状態に上記基板７１１、７１２を配置した状態
にて、貼り合わせを行う装置である。ここで、上述の、
応力が残存した状態にて基板７１１、７１２を貼り合わ
す動作は、図２に示すように、成形装置１０１にて成形
された基板７１１，７１２に対して、従来のように上記
アニール処理を施すことなく、直ちに成膜装置３０１に
て成膜を行い、該成膜後、直ぐに当該貼り合わせ装置４
０１にて貼り合わすことで達成される。又、上記相殺状
態にて貼り合わせを行う動作について、本実施形態では
成形装置１０１にて成形された基板７１１と基板７１２
とは、互いに隣接して交互に移送コンベア２０１上に載
置され、又、上述のように基板７１１と基板７１２との
反り方向及び反り量は同一となっているので、移送コン
ベア２０１上の隣接する２枚の基板７０１について上記
接着面７１４が対向するように配置することで、上記相
殺状態での貼り合わせが達成できる。Next, the bonding device 401 will be described. The laminating device 401 is configured such that, for each of the substrates 711 and 712 molded by the molding device 101, in a state where the stress remains as described above, and for each of the substrates 711 and 712 to be laminated. This is an apparatus that performs bonding in a state where the substrates 711 and 712 are arranged in an offset state where the stresses are offset by bonding the substrates 701. Here, as described above,
The operation of bonding the substrates 711 and 712 in a state where the stress remains is performed by performing the above-described annealing treatment on the substrates 711 and 712 formed by the forming apparatus 101 as in the related art, as shown in FIG. Instead, a film is immediately formed by the film forming apparatus 301, and immediately after the film formation, the bonding apparatus 4 is used.
This is achieved by bonding at 01. In this embodiment, the bonding operation in the offset state is performed with the substrates 711 and 712 formed by the forming apparatus 101.
Are placed alternately on the transfer conveyor 201 adjacent to each other, and the warpage direction and the warpage amount of the substrate 711 and the substrate 712 are the same as described above. By disposing the two substrates 701 so that the bonding surfaces 714 face each other, the bonding in the offset state can be achieved.
【００５３】このような貼り合せ装置４０１には、図２
に示すように大別して、接着剤供給装置４０２、接合回
転装置４０３、接着剤硬化装置４０４を備える。図２に
示すように、成膜装置３０１にて成膜された基板７０１
は、移送コンベア２０１上から移載装置２０１１にて受
渡装置４０５に受け渡され、該受渡装置４０５から基板
第１移送装置４０６にてに保持される。尚、本実施形態
では、処理能力向上のため、基板第１移送装置４０６は
２セット設けている。基板第１移送装置４０６は、保持
した基板７０１を接着剤供給装置４０２へ供給する。図
２から図４に示すように、接着剤供給装置４０２は、上
記第１基板７１１及び第２基板７１２の接着面７１４
に、本実施形態では紫外線硬化型の接着剤４０２１を接
着剤供給ノズル４０２２から塗布する。又、接着剤４０
２１の温度は、第１基板７１１及び第２基板７１２にお
ける接着剤４０２１の流動性、即ち膜厚に影響を与える
ことから、接着剤供給装置４０２は、接着剤供給ノズル
４０２２から塗布される接着剤４０２１の温度調節を行
う接着剤温度調節装置４０２３を備える。該接着剤温度
調節装置４０２３は、後述の検査装置５０１からのフィ
ードバック制御により制御装置６０１にて動作制御され
る。FIG. 2 shows an example of such a bonding apparatus 401.
As shown in FIG. 5, the apparatus is roughly divided into an adhesive supply device 402, a bonding rotation device 403, and an adhesive curing device 404. As shown in FIG. 2, a substrate 701 formed by the film forming apparatus 301 is formed.
Is transferred from the transfer conveyor 201 to the transfer device 405 by the transfer device 2011, and is held by the substrate first transfer device 406 from the transfer device 405. In the present embodiment, two sets of the substrate first transfer device 406 are provided to improve the processing capacity. The substrate first transfer device 406 supplies the held substrate 701 to the adhesive supply device 402. As shown in FIGS. 2 to 4, the adhesive supply device 402 includes an adhesive surface 714 of the first substrate 711 and the second substrate 712.
In the present embodiment, an ultraviolet curable adhesive 4021 is applied from an adhesive supply nozzle 4022. Also, the adhesive 40
Since the temperature of 21 affects the fluidity of the adhesive 4021 on the first substrate 711 and the second substrate 712, that is, the film thickness, the adhesive supply device 402 uses the adhesive applied from the adhesive supply nozzle 4022. An adhesive temperature controller 4023 for controlling the temperature of 4021 is provided. The operation of the adhesive temperature control device 4023 is controlled by the control device 601 by feedback control from an inspection device 501 described later.
【００５４】上記接合回転装置４０３は、図２、図３、
図５に示すように、接着剤供給装置４０２にて接着剤４
０２１が塗布された第１基板７１１及び第２基板７１２
を回転させて貼り合わせる装置であり、回転装置４０３
２を有する。回転装置４０３２は、保持部材の機能を果
たす一例である回転テーブル４０３２１を有する。上述
のように移送コンベア２０１上には第１基板７１１と第
２基板７１２とが交互に配列されているので、該回転装
置４０３２への基板７０１の供給について、基板第１移
送装置４０６は、図３に示すように第１基板７１１及び
第２基板７１２の各接着面７１４が互いに対向するよう
に１枚おきに基板の表裏を反転して上記回転テーブル４
０３２１へ供給を行う。このようにして回転装置４０３
２へ供給される各基板７０１は、成形時に基板７０１に
生じた応力が残存した状態であり、さらに各基板７０１
における上記応力が上記基板の貼り合わせにより相殺さ
れる相殺状態にて貼り合わされる。即ち、図６に示すよ
うに例えば、第１基板７１１の反り方向と、第２基板７
１２の反り方向とは異なるが、第１基板７１１の反り量
の方が第２基板７１２の反り量に比べて大きいとき、こ
れらの第１基板７１１と第２基板７１２とを貼り合わせ
た光ディスクは、反り量の大きい第１基板７１１に従っ
て反ってしまう。一方、本実施形態では、上述のように
成形時の温度制御により各基板７０１の反り方向及び反
り量は同一又はほぼ同一であるので、互いの反り方向が
逆向きになるように各基板７０１を配置し、貼り合すこ
とで、上記相殺状態での貼り合せが可能となる。尚、上
記基板第１移送装置４０６は、制御装置６０１により動
作制御される。The joining rotation device 403 is shown in FIGS.
As shown in FIG. 5, the adhesive 4
First substrate 711 and second substrate 712 coated with 021
And a rotating device 403.
2 The rotating device 4032 has a rotating table 40321 that is an example that functions as a holding member. As described above, since the first substrates 711 and the second substrates 712 are alternately arranged on the transfer conveyor 201, the supply of the substrates 701 to the rotating device 4032 requires the substrate first transfer device 406 As shown in FIG. 3, the first and second substrates 711 and 712 are turned over each other so that the bonding surfaces 714 of the second substrate 712 face each other.
0321 is supplied. Thus, the rotating device 403
2 is a state in which the stress generated in the substrate 701 during molding remains.
Are bonded in an offset state in which the above-mentioned stress is canceled by the bonding of the substrates. That is, as shown in FIG. 6, for example, the warp direction of the first substrate 711 and the second substrate 7
When the amount of warpage of the first substrate 711 is larger than the amount of warpage of the second substrate 712, the optical disk in which the first substrate 711 and the second substrate 712 are bonded to each other is different from the warp direction of the second substrate 712. And warps according to the first substrate 711 having a large amount of warpage. On the other hand, in the present embodiment, since the warpage direction and the warpage amount of each substrate 701 are the same or almost the same by the temperature control during molding as described above, each substrate 701 is set so that the warp directions are opposite to each other. By arranging and laminating, lamination in the above-mentioned offset state becomes possible. The operation of the first substrate transfer device 406 is controlled by the control device 601.
【００５５】上記回転装置４０３２は、貼り合わされる
２枚の基板７０１を載置した回転テーブル４０３２１を
その周方向に回転させる。このときの回転数や、回転速
度等の回転条件は、貼り合せ後の光ディスクの厚み、即
ち接着剤４０２１の膜厚に影響を与えることから、回転
装置４０３２は、後述の検査装置５０１からのフィード
バック制御により制御装置６０１にて動作制御される。
このように、回転装置４０３２によって光ディスクの回
転数を制御することで、接着剤４０２１の膜厚を制御す
ることができる。The rotating device 4032 rotates the rotary table 40321 on which the two substrates 701 to be bonded are placed, in the circumferential direction. At this time, the rotation conditions such as the number of rotations and the rotation speed affect the thickness of the optical disc after bonding, that is, the thickness of the adhesive 4021. The operation is controlled by the control device 601 by the control.
As described above, by controlling the number of rotations of the optical disc by the rotating device 4032, the thickness of the adhesive 4021 can be controlled.
【００５６】接合回転装置４０３にて貼り合わされ形成
された光ディスクは、上記基板第１移送装置４０６にて
回転装置４０３２から保持され、基板第２移送装置４０
７へ受け渡される。該基板第２移送装置４０７による光
ディスクの搬送経路の途中に上記接着剤硬化装置４０４
が配置されている。尚、本実施形態では、処理能力向上
のため、図示するように２台の接着剤硬化装置４０４が
配置されている。上記接着剤硬化装置４０４は、図２、
図３、図８に示すように、上述の接合回転装置４０３に
て接合された光ディスク７２１の接着剤４０２１を硬化
させる装置であり、接着剤硬化装置４０４１と、硬化用
テーブル温調装置４０４２とを有する。上記接着剤硬化
装置４０４１は、本実施形態では紫外線を照射するラン
プであり、照射時間等は制御装置６０１にて制御され
る。又、接着剤４０２１の硬化には光ディスク７２１の
温度も作用し、接着剤４０２１の硬化条件は光ディスク
７２１の反り量に関係することから、光ディスク７２１
の温度制御が必要になる。そこで、本実施形態では、上
記紫外線が照射される光ディスク７２１を載置する、保
持部材の機能を果たす他の例に相当する硬化用テーブル
４０４３の非載置面側に冷却材通過用通路４０４４を設
けるとともに、冷却材としての一例である水を上記冷却
材通過用通路４０４４へ供給して、硬化用テーブル４０
４３を介して光ディスク７２１の温度調整を行う硬化用
テーブル温調装置４０４２を設けている。該硬化用テー
ブル温調装置４０４２は、後述の検査装置５０１からの
フィードバック制御により制御装置６０１の命令に従
い、硬化用テーブル４０４３の温度調節を行う。このよ
うに、硬化用テーブル温調装置４０４２を設け光ディス
ク７２１の温度調整を行うことで、光ディスク７２１の
反り量を制御することができる。The optical disc bonded and formed by the joining rotation device 403 is held by the rotation device 4032 by the substrate first transfer device 406, and the substrate second transfer device 40
It is handed over to 7. The adhesive curing device 404 is provided in the middle of the optical disk transport path by the substrate second transport device 407.
Is arranged. In the present embodiment, two adhesive curing devices 404 are arranged as shown in the figure to improve the processing capacity. The adhesive curing device 404 is shown in FIG.
As shown in FIGS. 3 and 8, this is a device for curing the adhesive 4021 of the optical disc 721 joined by the joining rotating device 403. The adhesive curing device 4041 and the curing table temperature control device 4042 are combined. Have. The adhesive curing device 4041 is a lamp that irradiates ultraviolet rays in the present embodiment, and the irradiation time and the like are controlled by the control device 601. The temperature of the optical disc 721 also acts on the curing of the adhesive 4021, and the curing condition of the adhesive 4021 is related to the amount of warpage of the optical disc 721.
Temperature control is required. Therefore, in the present embodiment, a coolant passage 4044 is provided on the non-mounting surface side of the curing table 4043 corresponding to another example that functions as a holding member on which the optical disk 721 to be irradiated with the ultraviolet light is mounted. In addition, water, which is an example of a coolant, is supplied to the coolant passage 4044 so that the curing table 40
A hardening table temperature controller 4042 for adjusting the temperature of the optical disk 721 via 43 is provided. The curing table temperature controller 4042 adjusts the temperature of the curing table 4043 in accordance with a command from the controller 601 by feedback control from an inspection device 501 described later. As described above, by providing the curing table temperature controller 4042 and adjusting the temperature of the optical disk 721, the amount of warpage of the optical disk 721 can be controlled.
【００５７】上記接着剤硬化装置４０４にて接着剤４０
２１が硬化された光ディスクは、基板第２移送装置４０
７から基板第３移送装置４０８に受け渡される。基板第
３移送装置４０８の搬送経路の途中には、上記検査装置
５０１が配置され、さらに検査装置５０１にて良品と判
断された光ディスクを収納する収納部４０９が配置さ
れ、基板第３移送装置４０８は、検査装置５０１を通し
て収納部４０９へ良品光ディスクを搬送する。上記検査
装置５０１について説明する。検査装置５０１は、硬化
された光ディスク７２１について、反り量及び接着剤４
０２１の膜厚について、公知の装置を用いて検査する。
さらに本実施形態では、検査装置５０１は、光ディスク
７２１の測定した反り量及び接着剤４０２１の膜厚に応
じて、上述したように、制御装置６０１及び成形装置用
制御部１０２を介して、成形装置１０１に備わる上記温
調装置１２１〜１２８の動作制御、並びに貼り合せ装置
４０１に備わる上記接着剤温度調節装置４０２３、上記
回転装置４０３２、及び上記硬化用テーブル温調装置４
０４２の動作制御を行う。The adhesive 40 is cured by the adhesive curing device 404.
The optical disk having the cured 21 is transferred to the substrate second transfer device 40
7 to the third substrate transfer device 408. In the middle of the transport path of the third substrate transfer device 408, the inspection device 501 is arranged, and further, a storage section 409 for storing an optical disk determined to be good by the inspection device 501 is arranged. Transports a good optical disk to the storage unit 409 through the inspection device 501. The inspection device 501 will be described. The inspection device 501 determines the warpage amount and the adhesive 4 for the cured optical disc 721.
The film thickness of No. 021 is inspected using a known device.
Further, in the present embodiment, as described above, the inspection device 501 sends the molding device via the control device 601 and the molding device control unit 102 in accordance with the measured amount of warpage of the optical disk 721 and the film thickness of the adhesive 4021. The operation control of the temperature control devices 121 to 128 provided in 101, the adhesive temperature control device 4023, the rotation device 4032, and the curing table temperature control device 4 provided in the bonding device 401
042 is performed.
【００５８】以上説明した構成を有する光ディスク製造
装置１００の動作について以下に説明する。尚、当該光
ディスク製造装置１００にて光ディスク７２１が作製さ
れるまでの全工程は制御装置６０１によって動作制御さ
れる。又、当該光ディスク製造装置１００による光ディ
スク７２１の基本的な製造手順は、従来の光ディスク製
造装置における製造手順である、基板の成形、該基板へ
の金属膜の成膜、該基板を貼り合せて光ディスクの作
製、該光ディスクの検査の手順に同類である。The operation of the optical disk manufacturing apparatus 100 having the above-described configuration will be described below. Note that the operation of the control device 601 is controlled by the optical disk manufacturing apparatus 100 until the optical disk 721 is manufactured. The basic manufacturing procedure of the optical disk 721 by the optical disk manufacturing apparatus 100 is a manufacturing procedure in a conventional optical disk manufacturing apparatus. And the inspection procedure of the optical disk.
【００５９】まず、成形装置１０１において、型閉めに
より形成されている上記第１キャビティー１１１へ上記
第１キャビティー用射出装置１１５によって、及び第２
キャビティー１１２へ上記第２キャビティー用射出装置
１１６によって、それぞれ樹脂材を射出し、上記第１キ
ャビティー１１１にて上記第１基板７１１を、上記第２
キャビティー１１２にて上記第２基板７１２をそれぞれ
成形する。尚、本実施形態では、上記樹脂材はポリカー
ボネートであり、射出時の温度は約３７０℃である。First, in the molding device 101, the first cavity 111 formed by closing the mold is injected into the first cavity 111 by the first cavity injection device 115, and the second cavity 111.
The resin material is injected into the cavity 112 by the second cavity injection device 116, and the first substrate 711 is
The second substrates 712 are respectively formed in the cavities 112. In the present embodiment, the resin material is polycarbonate, and the temperature at the time of injection is about 370 ° C.
【００６０】該成形時、成形装置用制御部１０２によ
り、上述したように、成形時に生じる応力を近似させた
基板７０１同士を成形して、貼り合わせ後における基板
７０１同士の引っ張り合いの均等化を図れるように、各
温調装置１２１〜１２８の動作制御が行われる。具体的
には、成形後の第１基板７１１と第２基板７１２とにつ
いて、図７に示すように、互いの接着面７１４を対向さ
せて配置したとき、両接着面７１４に接する共通の仮想
接触面７１５を基準に、第１基板７１１及び第２基板７
１２の反り状態が対照形状となるように、換言すると、
上記強制反り発生温度差が生じるように、さらに好まし
くは上記強制反り発生温度差及び上記平坦部成形用温度
差が生じるように、第１基板７１１の成形に当たり温調
装置１２１、１２３、１２５、１２７の動作制御を行
い、第２基板７１２の成形に当たり温調装置１２２、１
２４、１２６、１２８の動作制御を行い、第１基板７１
１及び第２基板７１２の反り状態を制御する。At the time of molding, the molding apparatus control section 102 forms the substrates 701 each having the approximated stress generated at the time of molding as described above, and equalizes the tension of the substrates 701 after bonding. As can be achieved, operation control of each of the temperature control devices 121 to 128 is performed. Specifically, as shown in FIG. 7, when the first substrate 711 and the second substrate 712 after molding are arranged so that the bonding surfaces 714 thereof face each other, a common virtual contact that is in contact with both bonding surfaces 714 is formed. The first substrate 711 and the second substrate 7
In other words, the warp state of No. 12 becomes a contrast shape, in other words,
The temperature control devices 121, 123, 125, and 127 are used in forming the first substrate 711 so that the forced warpage occurrence temperature difference is generated, and more preferably, the forced warpage occurrence temperature difference and the flat portion forming temperature difference are generated. The operation of the temperature control devices 122 and 1 is performed when the second substrate 712 is formed.
24, 126 and 128, and the first substrate 71
The warp state of the first and second substrates 712 is controlled.
【００６１】成形後、金型１１３、１１４の型開きが行
われ、基板取出装置８０１にて、第１基板７１１及び第
２基板７１２が金型１１３、１１４から取り出され、第
１基板７１１及び第２基板７１２が互いに隣接して交互
に配列されるように移送コンベア２０１上に載置され
る。移送コンベア２０１に載置された第１基板７１１及
び第２基板７１２は、上記アニールを行うことなく、成
膜装置３０１へ搬送される。成膜装置３０１では、第１
基板７１１及び第２基板７１２の各接着面７１４に金属
薄膜が形成される。成膜後、第１基板７１１及び第２基
板７１２は、移送コンベア２０１にて移載装置２０１１
まで搬送され、受渡装置４０５を介して移載装置２０１
１から基板第１移送装置４０６へ受け渡され、該基板第
１移送装置４０６にて貼り合せ装置４０１へ供給され
る。After the molding, the molds 113 and 114 are opened, and the first substrate 711 and the second substrate 712 are taken out of the molds 113 and 114 by the substrate take-out device 801, and the first substrate 711 and the first The two substrates 712 are placed on the transfer conveyor 201 so as to be alternately arranged adjacent to each other. The first substrate 711 and the second substrate 712 placed on the transfer conveyor 201 are transferred to the film forming apparatus 301 without performing the above-described annealing. In the film forming apparatus 301, the first
A metal thin film is formed on each bonding surface 714 of the substrate 711 and the second substrate 712. After the film formation, the first substrate 711 and the second substrate 712 are transferred to the transfer device 2011 by the transfer conveyor 201.
Transport device 201 via the transfer device 405
The substrate 1 is transferred to the first substrate transfer device 406 and supplied to the bonding device 401 by the first substrate transfer device 406.
【００６２】貼り合せ装置４０１では、基板第１移送装
置４０６に保持された第１基板７１１及び第２基板７１
２が、順次、接着剤供給装置４０２に供給され、接着剤
供給装置４０２にて、上述のように接着剤温度調節装置
４０２３で温度制御された接着剤４０２１が第１基板７
１１及び第２基板７１２の各接着面７１４に供給され
る。その次に、第１基板７１１及び第２基板７１２は、
順次、接着剤供給装置４０２から基板第１移送装置４０
６にて保持され、接合回転装置４０３へ移送される。接
合回転装置４０３では、移送されてきた第１基板７１１
及び第２基板７１２が貼り合わされる。該貼り合せで
は、成形時に第１基板７１１及び第２基板７１２に生じ
た応力が残存した状態で、第１基板７１１及び第２基板
７１２における上記応力が上記基板７１１、７１２の貼
り合わせにより相殺される相殺状態にて貼り合わせがな
される。貼り合わされた光ディスク７２１は、接着剤４
０２１の膜厚を制御するため、制御された回転数にて回
転装置４０３２により水平回転される。該回転により、
第１基板７１１及び第２基板７１２の中間に介在する接
着剤４０２１が接着面７１４の全面に薄く引き延ばされ
て、両基板７１１、７１２は密着される。In the bonding device 401, the first substrate 711 and the second substrate 71 held by the first substrate transfer device 406 are provided.
2 are sequentially supplied to the adhesive supply device 402, and the adhesive 4021 whose temperature is controlled by the adhesive temperature control device 4023 as described above is supplied to the first substrate 7 by the adhesive supply device 402.
11 and the second substrate 712. Next, the first substrate 711 and the second substrate 712
Sequentially from the adhesive supply device 402 to the substrate first transfer device 40
6 and transferred to the joining rotation device 403. In the joining rotation device 403, the transferred first substrate 711
Then, the second substrate 712 is attached. In the bonding, the stress in the first substrate 711 and the second substrate 712 is offset by the bonding of the substrates 711 and 712 in a state where the stress generated in the first substrate 711 and the second substrate 712 during the molding remains. Lamination is performed in a state of offset. The bonded optical disk 721 is provided with an adhesive 4
In order to control the film thickness of No. 021, the film is horizontally rotated by the rotating device 4032 at a controlled number of rotations. By the rotation,
The adhesive 4021 interposed between the first substrate 711 and the second substrate 712 is thinly spread over the entire surface of the adhesive surface 714, and the substrates 711 and 712 are brought into close contact with each other.
【００６３】その次に、貼り合わされてなる光ディスク
は、接合回転装置４０３から基板第１移送装置４０６に
て保持された後、基板第２移送装置４０７へ受け渡さ
れ、該第２基板移送装置４０７にて接着剤硬化装置４０
４へ移送される。接着剤硬化装置４０４において、密着
した光ディスク７２１に対して、光ディスク７２１での
反り量を制御するため、硬化用テーブル温調装置４０４
２にて光ディスク７２１の温度制御を行い、接着剤硬化
装置４０４１による光ディスク７２１への紫外線照射に
より接着剤４０２１の硬化を行う。Next, the bonded optical disk is held by the bonding / rotating device 403 in the first substrate transfer device 406, and then transferred to the second substrate transfer device 407, where it is transferred to the second substrate transfer device 407. In the adhesive curing device 40
Transferred to 4. In the adhesive curing device 404, in order to control the amount of warpage of the optical disc 721 with respect to the closely adhered optical disc 721, the curing table temperature controller 404 is used.
2, the temperature of the optical disk 721 is controlled, and the adhesive 4021 is cured by irradiating the optical disk 721 with ultraviolet rays by the adhesive curing device 4041.
【００６４】上記硬化後、光ディスク７２１は、基板第
２移送装置４０７から基板第３移送装置４０８へ受け渡
され、該基板第３移送装置４０８にて検査装置５０１へ
搬入され、外観、接着剤４０２１の膜厚、反り量が測定
される。そして、該検査により良品と判断された光ディ
スクは、基板第３移送装置４０８にて収納部４０９へ移
送され、該収納部４０９に収納される。After the curing, the optical disk 721 is transferred from the second substrate transfer device 407 to the third substrate transfer device 408, carried into the inspection device 501 by the third substrate transfer device 408, and has an appearance and an adhesive 4021. And the amount of warpage are measured. Then, the optical disc determined to be non-defective by the inspection is transferred to the storage section 409 by the substrate third transfer device 408, and stored in the storage section 409.
【００６５】以上の工程にて一つの光ディスク７２１が
作製されるが、当該光ディスク７２１における接着剤４
０２１の膜厚、反り量の測定結果は、検査装置５０１か
ら制御装置６０１へ送出される。上記測定結果を得た制
御装置６０１は、上記接着剤４０２１の膜厚及び反り量
が許容範囲に含まれるときには、現状の条件にて光ディ
スク７２１の製造を続行し、一方、上記許容範囲を外れ
るときには、上記膜厚及び反り量が上記許容範囲に含ま
れるように、成形装置１０１に備わる成形装置用制御部
１０２を介して、上述したように、成形時に生じる応力
を近似させた基板７０１同士を成形して貼り合わせ後に
おける基板７０１同士の引っ張り合いの均等化を図れる
ように各温調装置１２１〜１２８にて第１基板７１１及
び第２基板７１２の成形時温度を制御したり、さらに
は、貼り合せ装置４０１に備わる接着剤温度調節装置４
０２３による接着剤４０２１の温度制御により接着剤４
０２１の膜厚を制御したり、回転装置４０３２による回
転数制御により接着剤４０２１の膜厚を制御したり、硬
化用テーブル温調装置４０４２による光ディスク７２１
の温度制御により光ディスク７２１の反り方向及び反り
量を制御する。尚、上述の接着剤４０２１の膜厚の制御
方法は、上記接着剤温度調節装置４０２３による接着剤
４０２１の温度制御、及び上記回転装置４０３２による
回転数制御の少なくとも一方を行えばよい。One optical disk 721 is manufactured through the above steps.
The measurement result of the film thickness and the amount of warpage of 021 is transmitted from the inspection device 501 to the control device 601. The controller 601 having obtained the above measurement result continues the production of the optical disc 721 under the current conditions when the film thickness and the amount of warpage of the adhesive 4021 are included in the allowable range. Then, as described above, the substrates 701 having similar stresses generated during molding are formed via the molding device control unit 102 provided in the molding device 101 such that the film thickness and the amount of warpage fall within the allowable ranges. The temperature at the time of forming the first substrate 711 and the second substrate 712 is controlled by each of the temperature control devices 121 to 128 so that the tension of the substrates 701 after bonding can be equalized. Adhesive temperature control device 4 provided in matching device 401
The adhesive 421 is controlled by the temperature control of the adhesive 4021 by the H.023.
No. 021, the thickness of the adhesive 4021 is controlled by controlling the number of rotations by the rotating device 4032, and the optical disk 721 is controlled by the curing table temperature control device 4042.
Of the optical disk 721 is controlled by controlling the temperature. As the method of controlling the film thickness of the adhesive 4021, at least one of the temperature control of the adhesive 4021 by the adhesive temperature controller 4023 and the rotation speed control by the rotating device 4032 may be performed.
【００６６】例えば、上記検査結果の内、光ディスク７
２１の反り量が上記許容範囲を外れるときには、接着剤
硬化装置４０４の硬化用テーブル４０４３の温度を自動
的に上下させる信号を硬化用テーブル温調装置４０４２
へ送出することにより高良品率を維持する。又、上記検
査結果の内、上記膜厚が上記許容範囲を外れるときに
は、接着剤４０２１の温度を上下させる信号を、上記接
着剤温度調節装置４０２３へ送出し、若しくは硬化用テ
ーブル４０４３の回転数を上下させる信号を、回転装置
４０３２へ送出するか、又は上記接着剤温度調節装置４
０２３及び回転装置４０３２の両者への信号送出を行
う。For example, of the above inspection results, the optical disk 7
When the amount of warpage of 21 is out of the allowable range, a signal for automatically raising or lowering the temperature of the curing table 4043 of the adhesive curing device 404 is sent to the curing table temperature controller 4042.
To maintain a high quality product rate. When the film thickness is out of the allowable range in the inspection result, a signal for raising or lowering the temperature of the adhesive 4021 is sent to the adhesive temperature controller 4023 or the rotation speed of the curing table 4043 is increased. A signal for raising and lowering is sent to the rotating device 4032 or the adhesive temperature controller 4
023 and the rotation device 4032.
【００６７】以上説明したように本実施形態の光ディス
ク製造装置１００によれば、以下のような効果を奏す
る。即ち、従来、成形、成膜工程後に２４時間のアニー
ル処理を行ったり、成形後に約４分の短時間アニール処
理を行ったりしたが、待機中の環境の変化により基板の
残留応力が不安定になり、基板貼り合わせ後のチルトも
不均一となっていた。より詳しく説明すると、基板貼り
合わせ前の工程にて設備トラブルが発生しラインが停止
すると、基板は停止時間分、移送コンベア上で短時間の
アニール処理がされた状態となる。よって、ライン停止
が発生したときの基板と、正常に稼動しているときの基
板との残留応力に差が生じ、このような基板同士が貼り
合わされるときには、２枚の基板の引っ張りバランスが
くずれ、チルト角は悪化する。又、通常、基板の温度
は、成形され金型から取り出されたときには、約１００
℃であり、放置することなく一気に貼り合わせると、貼
り合わせ時の基板温度は４０℃以上である。一方、ライ
ン停止が発生すると基板温度は常温である約２５℃程度
に下がる。このように基板温度が上下すると貼り合わせ
時の接着剤温度が上下し、一対の基板を回転させながら
接着剤を全面均一に塗布しようとしても内周部分及び外
周部分より接着剤がはみ出たり、逆に広がらずに途中で
停止したり、光ディスクの特性上重要な接着剤の厚みの
均一化が管理できない。このようにライン停止が生じた
ときには、人手によりその都度、接着剤の温度を操作し
たり、一対の基板の回転数を上下させたりする必要があ
った。As described above, according to the optical disk manufacturing apparatus 100 of the present embodiment, the following effects can be obtained. That is, conventionally, a 24-hour annealing process is performed after the forming and film-forming processes, or a short-time annealing process is performed for approximately 4 minutes after the forming. However, the residual stress of the substrate becomes unstable due to a change in the environment during standby. Thus, the tilt after bonding the substrates was also non-uniform. More specifically, when a facility failure occurs in the process before the substrate bonding and the line is stopped, the substrate is in a state in which the substrate is annealed for a short time on the transfer conveyor for the stop time. Therefore, there is a difference in residual stress between the substrate when the line stop occurs and the substrate during normal operation, and when such substrates are bonded to each other, the tension balance between the two substrates is lost. , The tilt angle deteriorates. Usually, the temperature of the substrate is about 100 when it is molded and taken out of the mold.
° C, and if the substrates are bonded together without leaving, the substrate temperature at the time of bonding is 40 ° C or higher. On the other hand, when a line stop occurs, the substrate temperature drops to about 25 ° C., which is a normal temperature. When the substrate temperature rises and falls in this manner, the temperature of the adhesive at the time of bonding rises and falls, and even if the adhesive is applied evenly over the entire surface while rotating the pair of substrates, the adhesive protrudes from the inner and outer peripheral portions, or reverses. It is difficult to control the uniformity of the thickness of the adhesive, which is important in the characteristics of the optical disc, because it stops on the way without spreading. When the line stops in this manner, it is necessary to manually control the temperature of the adhesive or to increase or decrease the rotation speed of the pair of substrates each time.
【００６８】これに対して本実施形態では、基板成形後
の放置工程を設けず、基板成形から貼り合わせ後の検査
まで短時間、本実施形態では約５分にて通過させる方法
を採る。これにより、放置工程中における、例えば温
度、湿度等の環境変化に起因するチルト変動の発生を無
くすことができる。又、放置工程を行うための、及びア
ニール処理を行うための、温度、湿度を管理した広い高
額なクリーンルームが不要であり、本実施形態では、部
分的なクリーントンネルを有する装置構造で済み、スペ
ース的、コスト的に従来装置に比べ有利である。又、上
記放置工程を削除したことから、本実施形態では基板成
形から貼り合わせ後の検査まで２分足らずで実行可能で
あるので、短納期、多品種の生産対応が可能である。On the other hand, in the present embodiment, a method is adopted in which a leaving step after the formation of the substrate is not provided, and the process from the formation of the substrate to the inspection after the bonding is performed in a short time, and in this embodiment, about 5 minutes. Thereby, it is possible to eliminate the occurrence of tilt fluctuation due to environmental changes such as temperature and humidity during the leaving process. Further, a large and expensive clean room for controlling the temperature and humidity for performing the leaving process and performing the annealing process is unnecessary, and in the present embodiment, the device structure having a partial clean tunnel is sufficient, and the space is not required. This is advantageous in terms of cost and cost as compared with the conventional apparatus. In addition, since the leaving step is omitted, in the present embodiment, it is possible to execute from substrate molding to inspection after bonding in less than two minutes, so that it is possible to respond to a short delivery time and production of many kinds.
【００６９】又、上記放置工程を無くすために、上述の
各温調装置１２１〜１２８を設けることで、第１基板７
１１及び第２基板７１２の成形、取出し時の基板７１
１、７１２の温度を自由にコントロールでき、さらに、
第１基板７１１及び第２基板７１２の成形時に、上述の
ように第１基板７１１及び第２基板７１２の反り量と反
り方向とを制御することで、貼り合わせ後のチルト変動
を極力押さえることができる。Further, in order to eliminate the above-mentioned leaving step, by providing the above-mentioned respective temperature control devices 121 to 128, the first substrate 7
Substrate 71 at the time of forming and removing 11 and second substrate 712
1,712 temperature can be controlled freely.
By controlling the amount of warpage and the direction of warpage of the first substrate 711 and the second substrate 712 during the molding of the first substrate 711 and the second substrate 712 as described above, it is possible to minimize the tilt variation after bonding. it can.
【００７０】さらに又、上述のように基板成形から貼り
合わせ後の検査までを短時間で通過させるようにした
が、万一、上記ライン停止が発生し基板７０１の温度が
上下した場合であっても、上述のように、貼り合わせ後
の検査工程での検査結果に応じて、該検査工程より前の
工程における設備の動作条件を自動的に変更可能とした
ことから、安定して接着剤４０２１の塗布が可能であ
り、接着剤４０２１の膜厚及び光ディスク７２１の反り
量を許容範囲に収めることができる。したがって、従来
工法では７０％程度であった良品率を９０％以上にて光
ディスク７２１の量産が可能である。このように高歩留
りを維持できるため、生産性がよく光ディスク７２１の
コスト面においても従来に比べて有利である。Further, as described above, the process from the molding of the substrate to the inspection after the bonding is performed in a short time. However, in the event that the line stops and the temperature of the substrate 701 rises and falls, Also, as described above, according to the inspection result in the inspection process after the bonding, the operating condition of the equipment in the process before the inspection process can be automatically changed. Can be applied, and the thickness of the adhesive 4021 and the amount of warpage of the optical disk 721 can be kept within allowable ranges. Therefore, the mass production of the optical disc 721 can be performed with the non-defective rate of about 70% in the conventional method being 90% or more. Since a high yield can be maintained in this way, the productivity is good and the cost of the optical disk 721 is more advantageous than in the past.
【００７１】又、一台の成形装置１０１にて、かつ可動
側金型及び固定側金型をそれぞれ一体物の金型にて構成
して、２枚の基板７１１、７１２を同時に成形させるこ
とで、２枚の基板７１１、７１２において、成形装置の
機差に起因する反り方向や反り量の差異の発生を防止す
ることができる。Also, by using a single molding apparatus 101, the movable mold and the fixed mold are each configured as an integral mold, and the two substrates 711 and 712 are molded simultaneously. In addition, in the two substrates 711 and 712, it is possible to prevent a difference in a warping direction and a warpage amount due to a machine difference of a molding apparatus.
【００７２】尚、上述した光ディスク製造装置１００で
は、２枚の基板７１１、７１２を貼り合わせて一つの光
ディスク７２１を作製したが、上述の本実施形態におけ
る技術的思想は、３枚以上の基板を貼り合わせて一つの
光ディスクを作製する場合にも適用可能である。即ち、
成形装置１０１の第１金型１１３及び第２金型１１４に
て３以上のキャビティーを形成し、製品としての光ディ
スクがＤＶＤの規格値を満足する上述の温度制御を施し
てこれらのキャビティーにて３以上の基板を成形して、
成形後、上記応力、具体的には上記反り方向及び反り量
が相殺される相殺状態にて貼り合わすことも可能であ
る。In the optical disk manufacturing apparatus 100 described above, one optical disk 721 is manufactured by bonding two substrates 711 and 712. However, the technical idea in the above-described embodiment is that three or more substrates are used. The present invention is also applicable to a case where one optical disk is manufactured by bonding. That is,
Three or more cavities are formed in the first mold 113 and the second mold 114 of the molding apparatus 101, and the above-mentioned temperature control is performed so that the optical disk as a product satisfies the standard value of DVD. To form three or more substrates,
After molding, it is also possible to bond together in an offset state where the above-mentioned stress, specifically the above-mentioned warping direction and the amount of warpage, are offset.
【００７３】[0073]
【発明の効果】以上詳述したように本発明の第１態様の
光ディスク製造装置、及び第２態様の光ディスク製造方
法によれば、成形装置及び貼り合せ装置を備え、複数の
基板を成形するときの上記基板に生じる応力をそれぞれ
の基板で近似させて上記基板を成形し、成形された上記
基板について、上記応力が残存した状態にて、各基板に
おける上記応力が上記基板の貼り合わせにより相殺され
る相殺状態にて貼り合わせるようにした。したがって、
上記基板を貼り合わせて光ディスクを作製したとき、該
光ディスクに反り等の変形が発生するのを防止すること
ができ、生産性が高く高品質な光ディスクを得ることが
できる。As described in detail above, according to the optical disk manufacturing apparatus of the first aspect and the optical disk manufacturing method of the second aspect of the present invention, a molding apparatus and a bonding apparatus are provided to form a plurality of substrates. Forming the substrate by approximating the stress generated in the substrate with each substrate, and forming the substrate, in the state where the stress remains, the stress in each substrate is offset by the bonding of the substrates. It was made to stick in the state of offset. Therefore,
When an optical disk is manufactured by bonding the substrates, deformation of the optical disk such as warpage can be prevented, and a high-quality optical disk with high productivity can be obtained.
【００７４】又、上記成形装置において、それぞれ一体
物の金型にて構成された第１金型及び第２金型を設け、
該第１金型及び第２金型に挟まれた第１キャビティー及
び第２キャビティーにて２枚の基板を同時に成形するよ
うに構成したことから、２枚の基板において、成形装置
の機差に起因する反り方向や反り量の差異の発生を防止
することができる。Further, in the above molding apparatus, a first mold and a second mold, each of which is constituted by an integral mold, are provided.
Since two substrates are simultaneously molded in the first cavity and the second cavity interposed between the first mold and the second mold, the molding machine of the two substrates is used. It is possible to prevent the difference in the warpage direction and the amount of warpage caused by the difference.
【００７５】さらに又、外周部温調装置、内周部温調装
置、成形装置用制御部を備え、第１キャビティー及び第
２キャビティーにおける基板成形時の基板の外周部分及
び内周部分の温度を制御することで、成形される基板の
反り方向及び反り量を制御することができる。その結
果、これらの基板を貼り合わせてなる光ディスクの反り
量の変動を極力押さえることができる。Further, an outer peripheral temperature controller, an inner peripheral temperature controller, and a controller for a molding device are provided, and the outer peripheral portion and the inner peripheral portion of the substrate at the time of molding the substrate in the first cavity and the second cavity are provided. By controlling the temperature, the direction and amount of warpage of the formed substrate can be controlled. As a result, it is possible to minimize the variation in the amount of warpage of the optical disk formed by bonding these substrates.
【００７６】さらに又、上記外周部温調装置は、第１外
周部温調装置と第２外周部温調装置とを有し、上記内周
部温調装置は、第１内周部温調装置と第２内周部温調装
置とを有することで、成形される基板の第１金型側と第
２金型側とで温度制御が可能となり、成形される基板の
反り方向及び反り量を制御することができる。その結
果、これらの基板を貼り合わせてなる光ディスクの反り
量の変動を極力押さえることができる。Further, the outer peripheral temperature adjusting device has a first outer peripheral temperature adjusting device and a second outer peripheral temperature adjusting device, and the inner peripheral temperature adjusting device has a first inner peripheral temperature adjusting device. By having the apparatus and the second inner peripheral temperature control device, the temperature of the substrate to be formed can be controlled between the first mold side and the second mold side, and the direction and amount of warpage of the formed substrate Can be controlled. As a result, it is possible to minimize the variation in the amount of warpage of the optical disk formed by bonding these substrates.
【００７７】さらに又、上記第１外周部温調装置、第２
外周部温調装置、第１内周部温調装置、及び第２内周部
温調装置に対して、第１金型側と第２金型側とで強制反
り発生温度差が生じるようにすることで、基板の反り方
向を制御できる。その結果、これらの基板を貼り合わせ
てなる光ディスクの反り量の変動を極力押さえることが
できる。Further, the first peripheral temperature control device, the second
For the outer peripheral temperature control device, the first inner peripheral temperature control device, and the second inner peripheral temperature control device, a forced warp generation temperature difference is generated between the first mold side and the second mold side. By doing so, the warping direction of the substrate can be controlled. As a result, it is possible to minimize the variation in the amount of warpage of the optical disk formed by bonding these substrates.
【００７８】さらに又、基板の上記外周部分及び上記内
周部分の温度差を平坦部成形用温度差に制御すること
で、上記内周部分に流出防止部を成形することができ
る。この結果、塗布された接着剤が外周方向へ流出する
ことが防止でき、基板の全面にわたり接着剤の膜厚を均
一にすることができる。Further, by controlling the temperature difference between the outer peripheral portion and the inner peripheral portion of the substrate to the temperature difference for forming a flat portion, the outflow preventing portion can be formed at the inner peripheral portion. As a result, the applied adhesive can be prevented from flowing out in the outer peripheral direction, and the thickness of the adhesive can be made uniform over the entire surface of the substrate.
【００７９】さらに検査装置及び制御装置を備え、上記
基板を貼り合わせて作製した光ディスクの反り量と接着
剤の膜厚を検査し、該検査結果に基づいて上記貼り合せ
のときに光ディスクを保持する保持部材の温度調整、該
保持部材の回転数、接着剤の温度調整を行うようにした
ことから、上記反り量及び膜厚に変化を生じたときには
検査工程よりも前工程側に備わる装置での製造条件を自
動的に変更することができ、その結果、光ディスクの反
り等の変形防止、接着剤の膜厚の均一化を図ることがで
き、平面度の良好な光ディスクを得ることができる。Further, an inspection device and a control device are provided, and the warp amount and the adhesive film thickness of the optical disk manufactured by bonding the substrates are inspected, and the optical disk is held at the time of the bonding based on the inspection result. Since the temperature adjustment of the holding member, the number of rotations of the holding member, and the temperature adjustment of the adhesive are performed, when a change occurs in the amount of warpage and the film thickness, a device provided in a process before the inspection process is provided. The manufacturing conditions can be automatically changed. As a result, deformation such as warpage of the optical disk can be prevented, the thickness of the adhesive can be made uniform, and an optical disk with good flatness can be obtained.
【図１】 本発明の実施形態の光ディスク製造装置に備
わる成形装置の概略の断面図である。FIG. 1 is a schematic sectional view of a molding apparatus provided in an optical disk manufacturing apparatus according to an embodiment of the present invention.
【図２】 上記光ディスク製造装置の全体を示した平面
図である。FIG. 2 is a plan view showing the entire optical disc manufacturing apparatus.
【図３】 図２に示す光ディスク製造装置にて光ディス
クを製造するときの概略工程を模式的に表した図であ
る。FIG. 3 is a diagram schematically showing a schematic process when an optical disk is manufactured by the optical disk manufacturing apparatus shown in FIG. 2;
【図４】 図２に示す光ディスク製造装置に備わる接着
剤供給装置の構成を示す図である。FIG. 4 is a diagram showing a configuration of an adhesive supply device provided in the optical disk manufacturing apparatus shown in FIG.
【図５】 図２に示す光ディスク製造装置に備わる接合
回転装置の構成を示す図である。FIG. 5 is a diagram showing a configuration of a joining rotation device provided in the optical disc manufacturing apparatus shown in FIG.
【図６】 成形された２枚の基板のそれぞれの反り具合
と、これらの基板を貼り合わせた光ディスクにおける反
り具合とを示した図であり、不良となった場合を示した
図である。FIG. 6 is a diagram showing the degree of warpage of two molded substrates and the degree of warpage of an optical disc to which these substrates are bonded, and is a diagram showing a case where a defect has occurred.
【図７】 成形された２枚の基板のそれぞれの反り具合
と、これらの基板を貼り合わせた光ディスクにおける反
り具合とを示した図であり、良品となった場合を示した
図である。FIG. 7 is a diagram showing the degree of warpage of two molded substrates and the degree of warpage of an optical disk to which these substrates are bonded, and shows a case where a non-defective product is obtained.
【図８】 図２に示す光ディスク製造装置に備わる接着
剤硬化装置の構成を示す図である。8 is a diagram showing a configuration of an adhesive curing device provided in the optical disc manufacturing apparatus shown in FIG.
【図９】 成形後における基板の反り状態を説明するた
めの基板の断面図である。FIG. 9 is a cross-sectional view of the substrate for explaining a warped state of the substrate after molding.
【図１０】 成形後における基板の反り状態を説明する
ための基板の断面図である。FIG. 10 is a cross-sectional view of the substrate for explaining a warped state of the substrate after molding.
【図１１】 基板の内周部分及び外周部分を説明するた
めの図である。FIG. 11 is a diagram for explaining an inner peripheral portion and an outer peripheral portion of the substrate.
１００…光ディスク製造装置、１０１…成形装置、１０
２…成形装置用制御部、１１１…第１キャビティー、１
１２…第２キャビティー、１１３…第１金型、１１４…
第２金型、１２１…第１基板用第１外周部温調装置、１
２２…第２基板用第１外周部温調装置、１２３…第１基
板用第１内周部温調装置、１２４…第２基板用第１内周
部温調装置、１２５…第１基板用第２外周部温調装置、
１２６…第２基板用第２外周部温調装置、１２７…第１
基板用第２内周部温調装置、１２８…第２基板用第２内
周部温調装置、４０１…貼り合せ装置、５０１…検査装
置、６０１…制御装置、７１１…第１基板、７１２…第
２基板、７２１…光ディスク、４０４３…硬化用テーブ
ル、４０３２１…回転テーブル。100: optical disk manufacturing device, 101: molding device, 10
2 ... Control unit for molding apparatus, 111 ... First cavity, 1
12 second cavity, 113 first mold, 114
2nd die, 121... 1st peripheral temperature control device for 1st substrate,
22: first outer peripheral temperature controller for the second substrate, 123: first inner peripheral temperature controller for the first substrate, 124: first inner peripheral temperature controller for the second substrate, 125: first substrate A second peripheral temperature control device,
126: second peripheral temperature control device for second substrate, 127: first
Second inner peripheral temperature controller for substrate, 128: second inner peripheral temperature controller for second substrate, 401: bonding device, 501: inspection device, 601: control device, 711: first substrate, 712 ... Second substrate, 721 optical disk, 4043 curing table, 40321 rotating table.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ１１Ｂ 7/26 ５３１ Ｇ１１Ｂ 7/26 ５３１ // Ｂ２９Ｌ 17:00 Ｂ２９Ｌ 17:00 (72)発明者 村瀬 龍馬 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 辻井 太郎 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 中嶋 雄一 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 角陸 晋二 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 福島 哲夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 4F202 AH79 AR06 CA11 CB01 CK41 CK89 CN05 CN13 4F206 AH79 AR065 JA07 JN43 JQ81 JW41 4F211 AH79 TA03 TC01 TJ08 TN26 TN45 5D029 HA07 KB01 KC11 RA27 5D121 AA02 AA03 AA07 DD05 DD13 DD18 EE22 FF03 FF13 GG02 GG20 HH08 HH14 JJ07 JJ08──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G11B 7/26 531 G11B 7/26 531 // B29L 17:00 B29L 17:00 (72) Inventor Ryoma Murase 1006 Kadoma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. Matsushita Electric Industrial Co., Ltd. (72) Inventor Shinji Sakuriku 1006 Odomo Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. Term (reference) 4F202 AH79 AR06 CA11 CB01 CK41 CK89 CN05 CN13 4F206 AH79 AR065 JA07 JN43 JQ81 JW41 4F211 AH79 TA03 TC01 TJ08 TN26 TN45 5D029 HA07 KB01 KC11 RA27 5D121 AA02 AA03 AA07 DD05 DD13 DD18 EE22 FF03 FF13 GG02 GG20 HH08 HH14 JJ07 JJ08
Claims (15)
わせて光ディスク（７２１）を製造する光ディスク製造
装置であって、 上記複数の基板を成形する成形装置であって、基板成形
のときに上記複数の基板に生じる応力を上記複数の基板
で近似させて上記複数の基板を成形する成形装置（１０
１）と、 成形された上記複数の基板について、上記応力が残存し
た状態にて、各基板における上記応力が上記基板の貼り
合わせにより相殺される相殺状態にて貼り合わせを行う
貼り合せ装置（４０１）と、を備えたことを特徴とする
光ディスク製造装置。1. An optical disk manufacturing apparatus for manufacturing an optical disk (721) by bonding a plurality of substrates (711, 712), wherein said forming apparatus forms said plurality of substrates. A forming device (10) for forming the plurality of substrates by approximating the stress generated in the plurality of substrates by the plurality of substrates.
1) and a bonding apparatus (401) that performs bonding on the molded substrates in a state where the stress remains, and in which the stress in each substrate is offset by the bonding of the substrates. An optical disc manufacturing apparatus characterized by comprising:
び第２金型（１１４）を有し、上記第１金型及び第２金
型は、上記第１金型及び第２金型に挟まれた領域に上記
複数の基板を成形するための複数のキャビティー（１１
１、１１２）を形成する、請求項１記載の光ディスク製
造装置。2. The molding apparatus has a first mold (113) and a second mold (114), wherein the first mold and the second mold are the first mold and the second mold. A plurality of cavities (11) for molding the plurality of substrates in a region sandwiched between molds.
The optical disk manufacturing apparatus according to claim 1, wherein the optical disk manufacturing apparatus (1, 112) is formed.
置（１２１、１２２、１２５、１２６）と、内周部温調
装置（１２３、１２４、１２７、１２８）と、成形装置
用制御部（１０２）とを有し、 上記外周部温調装置は、上記複数のキャビティーにて成
形される上記基板におけるそれぞれの外周部分（７１６
１、７１７１）の温度制御を行い、 上記内周部温調装置は、上記複数のキャビティーにて成
形される上記基板におけるそれぞれの内周部分（７１６
２、７１７２）の温度制御を行い、 上記成形装置用制御部は、上記複数のキャビティーにて
上記基板をそれぞれ成形するときに上記基板に生じるそ
れぞれの応力を上記基板で近似させる動作制御を、上記
外周部温調装置及び上記内周部温調装置に対して行う、
請求項２記載の光ディスク製造装置。3. The molding device further includes an outer peripheral temperature controller (121, 122, 125, 126), an inner peripheral temperature controller (123, 124, 127, 128), and a controller for the molding device. (102), wherein the outer peripheral portion temperature control device is configured such that each outer peripheral portion (716) of the substrate formed by the plurality of cavities.
1, 7171), and the inner peripheral portion temperature control device controls each inner peripheral portion (716) of the substrate formed by the plurality of cavities.
2, 7172), and the controller for the molding apparatus performs operation control for approximating each stress generated in the substrate when the substrate is molded in each of the plurality of cavities with the substrate. Performed on the outer peripheral temperature controller and the inner peripheral temperature controller,
The optical disk manufacturing apparatus according to claim 2.
ビティーのそれぞれに対応して上記第１金型に接続され
る第１外周部温調装置（１２１、１２２）と、上記複数
のキャビティーのそれぞれに対応して上記第２金型に接
続される第２外周部温調装置（１２５、１２６）とを有
し、 上記内周部温調装置は、上記複数のキャビティーのそれ
ぞれに対応して上記第１金型に接続される第１内周部温
調装置（１２３、１２４）と、上記複数のキャビティー
のそれぞれに対応して上記第２金型に接続される第２内
周部温調装置（１２７、１２８）とを有する、請求項３
記載の光ディスク製造装置。4. The temperature control device according to claim 1, wherein the temperature control device includes a first temperature control device connected to the first mold corresponding to each of the plurality of cavities. A second outer peripheral temperature control device (125, 126) connected to the second mold corresponding to each of the cavities, wherein the inner peripheral temperature control device includes: A first inner peripheral temperature control device (123, 124) connected to the first mold corresponding to the first mold; and a second inner mold connected to the second mold corresponding to each of the plurality of cavities. 4. An inner peripheral temperature controller (127, 128).
An optical disc manufacturing apparatus according to the above.
部温調装置、上記第１内周部温調装置、上記第２外周部
温調装置、及び上記第２内周部温調装置に対して、上記
複数のキャビティーにて成形されるそれぞれの上記基板
において、上記第１金型側の第１温度を上記第２金型側
の第２温度に比べて高くしかつ上記第１温度と上記第２
温度との差を強制反り発生温度差に制御し、ここで上記
強制反り発生温度差は、成形後に当該成形装置から取り
出された上記基板の上記内周部分が上記外周部分に比し
て上記第２金型側に突状となる温度差である、請求項４
記載の光ディスク製造装置。5. The control unit for a molding device includes the first outer peripheral temperature controller, the first inner peripheral temperature controller, the second outer peripheral temperature controller, and the second inner peripheral temperature controller. In the apparatus, the first temperature on the first mold side is higher than the second temperature on the second mold side in each of the substrates molded in the plurality of cavities, and 1 temperature and the second
The difference from the temperature is controlled to a forced warpage occurrence temperature difference, wherein the forced warpage occurrence temperature difference is such that the inner peripheral portion of the substrate taken out of the molding apparatus after the molding has a lower temperature than the outer peripheral portion. 5. The temperature difference which is protruding toward the second mold.
An optical disc manufacturing apparatus according to the above.
第１外周部温調装置、上記第１内周部温調装置、上記第
２外周部温調装置、及び上記第２内周部温調装置に対し
て、上記複数のキャビティーにて成形されるそれぞれの
上記基板において、上記内周部分の内周部温度に比して
上記外周部分の外周部温度を高くしかつ上記内周部温度
と上記外周部温度との差を平坦部成形用温度差に制御
し、ここで上記平坦部成形用温度差は、成形後に当該成
形装置から取り出した上記基板に上記貼り合せ用の接着
剤（４０２１）を塗布した際に上記接着剤が上記基板の
直径方向へ流出するのを防止する流出防止部（７１８）
を形成する温度である、請求項５記載の光ディスク製造
装置。6. The molding device controller further includes a first outer peripheral temperature controller, a first inner peripheral temperature controller, a second outer peripheral temperature controller, and a second inner peripheral unit. For the temperature control device, in each of the substrates molded in the plurality of cavities, the outer peripheral temperature of the outer peripheral portion is higher than the inner peripheral temperature of the inner peripheral portion, and the inner peripheral temperature is increased. Controlling the difference between the part temperature and the outer peripheral part temperature to the flat part forming temperature difference, wherein the flat part forming temperature difference is applied to the substrate taken out of the forming apparatus after the forming and the bonding adhesive An outflow preventing portion (718) for preventing the adhesive from flowing out in the diameter direction of the substrate when (4021) is applied;
6. The optical disk manufacturing apparatus according to claim 5, wherein the temperature is a temperature at which the optical disk is formed.
り量を検査する検査装置（５０１）と、 上記検査装置が送出する検査結果の上記反り量が許容範
囲を超えたときには、上記貼り合わせ動作の際に上記各
基板を保持している保持部材（４０３２１）の温度調節
を行う制御装置（６０１）と、をさらに備えた請求項１
ないし６のいずれかに記載の光ディスク製造装置。7. An inspection device (501) for inspecting the amount of warpage of the optical disk after the bonding, and when the amount of warpage of the inspection result sent by the inspection device exceeds an allowable range, the inspection operation of the bonding operation is performed. The control device (601) for adjusting the temperature of the holding member (40321) holding the respective substrates at the time.
7. The optical disk manufacturing apparatus according to any one of claims 6 to 6.
せ後、上記貼り合わせに使用した接着剤にてなる接着層
の膜厚を検査し、 上記制御装置は、さらに、上記検査装置が送出する検査
結果の上記膜厚が許容範囲を超えたときには、少なくと
も上記接着剤の温度調節及び上記基板の回転数調節の一
方を行う、請求項７記載の光ディスク製造装置。8. The inspection device further inspects the thickness of the adhesive layer made of the adhesive used for the bonding after the bonding, and the control device further sends out the inspection device. 8. The optical disk manufacturing apparatus according to claim 7, wherein when the inspection result indicates that the film thickness exceeds an allowable range, at least one of the temperature adjustment of the adhesive and the rotation speed adjustment of the substrate is performed.
わせて光ディスク（７２１）を製造する光ディスク製造
方法であって、 成形時に上記基板に生じる応力を各基板間で近似させて
上記複数の基板を成形し、 成形された上記複数の基板について、上記応力が残存し
た状態にて、各基板における上記応力が上記基板の貼り
合わせにより相殺される相殺状態にて貼り合わせる、こ
とを特徴とする光ディスク製造方法。9. An optical disk manufacturing method for manufacturing an optical disk (721) by bonding a plurality of substrates (711, 712), wherein the stress generated in the substrates during molding is approximated between the substrates. An optical disc, wherein the plurality of formed substrates are bonded together in a state where the stress remains, and in a state where the stress in each substrate is canceled by bonding the substrates. Production method.
板成形後において、各基板を強制的に反らせる基板成形
である、請求項９記載の光ディスク製造方法。10. The method of manufacturing an optical disk according to claim 9, wherein said substrate forming in which the stress is approximated is a substrate forming in which each substrate is forcibly warped after the substrate is formed.
び反り量は、上記基板成形時での上記基板の厚み方向に
おける温度勾配により制御する、請求項１０記載の光デ
ィスク製造方法。11. The optical disk manufacturing method according to claim 10, wherein a warping direction and a warpage amount in the forced warpage are controlled by a temperature gradient in a thickness direction of the substrate at the time of forming the substrate.
にて上記基板の内周部分と外周部分とに温度差を設ける
ことで、基板成形後において上記基板に貼り合せ用の接
着剤（４０２１）を塗布した際に上記接着剤が上記基板
の直径方向へ流出するのを防止する流出防止部（７１
８）を形成する反りである、請求項１１記載の光ディス
ク製造方法。12. The compulsory warping is performed by providing a temperature difference between an inner peripheral portion and an outer peripheral portion of the substrate during the formation of the substrate, so that an adhesive (4021) for bonding to the substrate after the substrate is formed. ) Is applied to prevent the adhesive from flowing out in the diameter direction of the substrate.
The method of manufacturing an optical disk according to claim 11, wherein the warpage is to form 8).
反り量、及び上記貼り合わせに使用した接着剤にてなる
接着層の膜厚を検査し、 該検査結果により上記反り量が許容範囲を超えたときに
は、上記貼り合わせ動作の際に上記各基板を保持してい
る保持部材（４０３２１）の温度調節を行い、上記検査
結果により上記膜厚が許容範囲を超えたときには、上記
接着剤の温度調節及び上記基板の回転数調節の少なくと
も一方を行う、請求項１０ないし１２のいずれかに記載
の光ディスク製造方法。13. After the bonding, the amount of warpage of the optical disk and the thickness of an adhesive layer made of the adhesive used for the bonding are inspected, and as a result of the inspection, the amount of warpage exceeds an allowable range. In some cases, the temperature of the holding member (40321) holding each of the substrates is adjusted during the bonding operation, and when the film thickness exceeds the allowable range according to the inspection result, the temperature of the adhesive is adjusted. 13. The optical disk manufacturing method according to claim 10, wherein at least one of the rotation speed adjustment of the substrate is performed.
反り量、及び上記貼り合わせに使用した接着剤にてなる
接着層の膜厚を検査し、 該検査結果により上記反り量が許容範囲を超えたときに
は、上記基板成形時における上記基板の厚み方向におけ
る温度勾配の制御を行う、請求項１１ないし１３のいず
れかに記載の光ディスク製造方法。14. After the bonding, an amount of warpage of the optical disk and a film thickness of an adhesive layer made of an adhesive used for the bonding are inspected, and as a result of the inspection, the amount of warpage exceeds an allowable range. 14. The optical disk manufacturing method according to claim 11, wherein a temperature gradient in a thickness direction of the substrate at the time of forming the substrate is controlled.
範囲を超えたときには、さらに、上記基板成形時におけ
る上記基板の内周部分と外周部分との温度差を制御す
る、請求項１４記載の光ディスク製造方法。15. The optical disk according to claim 14, wherein when the amount of warpage exceeds an allowable range as a result of the inspection, a temperature difference between an inner peripheral portion and an outer peripheral portion of the substrate during the molding of the substrate is further controlled. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042723A JP2001232666A (en) | 2000-02-21 | 2000-02-21 | Apparatus and method for manufacturing optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042723A JP2001232666A (en) | 2000-02-21 | 2000-02-21 | Apparatus and method for manufacturing optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001232666A true JP2001232666A (en) | 2001-08-28 |
Family
ID=18565757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000042723A Pending JP2001232666A (en) | 2000-02-21 | 2000-02-21 | Apparatus and method for manufacturing optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001232666A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1300231A1 (en) * | 2001-10-05 | 2003-04-09 | Toyo Machinery & Metal Co. Ltd. | Injection molding machine |
| EP1561576A3 (en) * | 2004-02-03 | 2005-10-26 | Ricoh Company | Correcting ridge, apparatus and method for laminating and laminated recording medium |
| US6982017B2 (en) | 2003-12-26 | 2006-01-03 | Origin Electric Company, Limited | Method for controlling deflection of substrates by temperature |
| US7303381B2 (en) | 2004-03-30 | 2007-12-04 | Taiyo Yuden Co., Ltd. | Device for manufacturing optical disc, method of manufacturing the same, and optical disc |
| JP2008179064A (en) * | 2007-01-25 | 2008-08-07 | Daisen Industry Co Ltd | Molding machine for porous molding and method for manufacturing porous molding |
| EP1995036A1 (en) * | 2007-05-22 | 2008-11-26 | Cad Innov' | Method for cooling the imprint of a mould for manufacturing injected plastic parts and imprint for implementing said method |
-
2000
- 2000-02-21 JP JP2000042723A patent/JP2001232666A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1300231A1 (en) * | 2001-10-05 | 2003-04-09 | Toyo Machinery & Metal Co. Ltd. | Injection molding machine |
| US7128550B2 (en) * | 2001-10-05 | 2006-10-31 | Toyo Machinery & Metal Co., Ltd. | Injection molding machine |
| US6982017B2 (en) | 2003-12-26 | 2006-01-03 | Origin Electric Company, Limited | Method for controlling deflection of substrates by temperature |
| US7044183B2 (en) | 2003-12-26 | 2006-05-16 | Origin Electric Company, Limited | Apparatus for processing substrates |
| EP1561576A3 (en) * | 2004-02-03 | 2005-10-26 | Ricoh Company | Correcting ridge, apparatus and method for laminating and laminated recording medium |
| US7303381B2 (en) | 2004-03-30 | 2007-12-04 | Taiyo Yuden Co., Ltd. | Device for manufacturing optical disc, method of manufacturing the same, and optical disc |
| US7833378B2 (en) | 2004-03-30 | 2010-11-16 | Taiyo Yuden Co., Ltd. | Method for manufacturing optical disc and optical disc |
| JP2008179064A (en) * | 2007-01-25 | 2008-08-07 | Daisen Industry Co Ltd | Molding machine for porous molding and method for manufacturing porous molding |
| EP1995036A1 (en) * | 2007-05-22 | 2008-11-26 | Cad Innov' | Method for cooling the imprint of a mould for manufacturing injected plastic parts and imprint for implementing said method |
| FR2916381A1 (en) * | 2007-05-22 | 2008-11-28 | Cad Innov Sarl | METHOD FOR COOLING A FOOTPRINT OF A MOLD FOR MANUFACTURING INJECTED PLASTIC PARTS AND IMPRESSION FOR IMPLEMENTING DIDUT PROCEDE. |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0895234B1 (en) | Method and apparatus for manufacture of laminated optical disc | |
| JP3988834B2 (en) | Resin layer forming method, resin layer forming apparatus, disc, and disc manufacturing method | |
| KR101067988B1 (en) | Bonding method and bonding apparatus | |
| TWI384476B (en) | Fitting method and fitting device | |
| JP2001232666A (en) | Apparatus and method for manufacturing optical disk | |
| US20030029555A1 (en) | Process and apparatus of producing optical disk and process of producing substrate | |
| WO2008038414A1 (en) | Bonding method and bonding apparatus | |
| CN100369142C (en) | Method and apparatus for adhesion of mfg. DVD light disk | |
| JP3676624B2 (en) | Optical disc manufacturing method and manufacturing apparatus, and substrate manufacturing method | |
| US7591920B1 (en) | Techniques for bonding substrates using dynamic alternating electric field | |
| JPH10275362A (en) | Optical stuck disk and molding die therefor | |
| JP4068187B2 (en) | Optical disc manufacturing method | |
| JP3969720B2 (en) | Disk substrate bonding equipment | |
| US8127820B1 (en) | System for producing optical recording medium | |
| JP4549969B2 (en) | Optical disc manufacturing method and apparatus | |
| JPH1166638A (en) | Production of optical recording medium and its producing apparatus | |
| JP2002042383A (en) | Method and device for sticking optical disk | |
| JP2001266419A (en) | Method and device for manufacturing optical disk | |
| JP2003191339A (en) | Method for manufacturing optical disc, optical disc molding product used therefor, optical disc stamper and mold for molding optical disc | |
| JPH11273163A (en) | Method and device for manufacturing laminated disk | |
| JP2001014736A (en) | Production of optical disk | |
| JP2001052379A (en) | Method and apparatus for manufacturing optical disk | |
| JP2002197735A (en) | Apparatus for manufacturing optical disk | |
| JPH09180267A (en) | Manufacture of optical pasted disks and manufacturing device therefor | |
| JP2003257086A (en) | Method for holding plane, unit for holding plane, apparatus for holding plane, method for manufacturing disk, and apparatus for manufacturing disk |