JP2001217331A - Package for accommodating semiconductor element - Google Patents

Package for accommodating semiconductor element

Info

Publication number
JP2001217331A
JP2001217331A JP2000027396A JP2000027396A JP2001217331A JP 2001217331 A JP2001217331 A JP 2001217331A JP 2000027396 A JP2000027396 A JP 2000027396A JP 2000027396 A JP2000027396 A JP 2000027396A JP 2001217331 A JP2001217331 A JP 2001217331A
Authority
JP
Japan
Prior art keywords
conductor layer
ground conductor
metal
terminal
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000027396A
Other languages
Japanese (ja)
Inventor
Koji Kubota
耕治 久保田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000027396A priority Critical patent/JP2001217331A/en
Publication of JP2001217331A publication Critical patent/JP2001217331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve high frequency transmission characteristic between a semiconductor element and an external electric circuit without damaging airtightness in a semiconductor package. SOLUTION: In an attaching part of a side wall of a vessel main body formed of metal, an upper ground conductor layer D whose end portions are exposed to an outer surface side of the side wall, a lower ground conductor layer C, a line conductor layer A which is positioned almost midway between the upper ground conductor layer D and the lower ground conductor layer C and electrically connects the inside and the outside of the side wall, and the identical surface ground conductor layers B which are the identical surface with the line conductor layer A and are arranged on both sides of the layer A, are formed, and penetrating conductors A which connect the upper ground conductor layer D, the identical surface ground conductor layers B and the lower ground conductor layer C on both sides of the line conductor layer A, are formed. An I/O terminal in which a cylindrical metal member 3b bonded to the upper ground conductor layer D, the lower ground conductor layer C and the identical surface ground conductor layers B, and a metal terminal 3C bonded to the line conductor layer A are arranged is engaged with an end surface of the outer surface side of the side wall of the dielectric substrate 3a.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、光通信分野、マイ
クロ波通信分野およびミリ波通信分野等で用いられ高周
波帯域で作動する各種半導体素子を収容する半導体素子
収納用パッケージに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing various semiconductor elements which operate in a high frequency band and are used in the fields of optical communication, microwave communication and millimeter wave communication.

【０００２】[0002]

【従来の技術】従来の光通信分野、マイクロ波通信分野
またはミリ波通信分野等で用いられて高周波帯域で作動
する各種半導体素子を収容する半導体素子収納用パッケ
ージ（以下、半導体パッケージという）のうち、光通信
分野に用いられ光半導体素子を収容するための光半導体
パッケージを図４および図５に示す。2. Description of the Related Art Among conventional semiconductor element housing packages (hereinafter, referred to as semiconductor packages) for housing various semiconductor elements used in the field of optical communication, microwave communication or millimeter wave communication and operating in a high frequency band. FIGS. 4 and 5 show an optical semiconductor package used to accommodate an optical semiconductor element used in the optical communication field.

【０００３】これらの図において、１１，１２は、それ
ぞれ誘電体材料から成り容器本体を構成する基体と側壁
用の枠体、１３は入出力端子の１種である高周波用ガラ
ス端子、１４は入出力端子の１種であるフィードスルー
型のセラミック端子、１５は透光性部材１６を内部に設
置するとともに光ファイバを挿通し固定させる筒状の固
定部材、１６は集光レンズとしての透光性部材、１７は
蓋体、１８はＬＤ（半導体レーザ），ＰＤ（フォトダイ
オード）等の光半導体素子を示す。これらの基体１１、
枠体１２、高周波用ガラス端子１３、セラミック端子１
４、固定部材１５、透光性部材１６および蓋体１７と
で、光半導体素子１８を光半導体パッケージ内部に収容
する。In these figures, reference numerals 11 and 12 denote a base and a frame for a side wall, each of which is made of a dielectric material and constitutes a container body; 13 is a high-frequency glass terminal which is a kind of input / output terminal; A feed-through type ceramic terminal, which is a kind of output terminal, 15 is a cylindrical fixing member for installing a light transmitting member 16 therein and inserting and fixing an optical fiber, and 16 is a light transmitting lens as a condenser lens. Reference numeral 17 denotes a cover, and 18 denotes an optical semiconductor element such as an LD (semiconductor laser) or PD (photodiode). These substrates 11,
Frame 12, high-frequency glass terminal 13, ceramic terminal 1
4. The optical semiconductor element 18 is accommodated in the optical semiconductor package by the fixing member 15, the translucent member 16 and the lid 17.

【０００４】また、このような光半導体パッケージは、
一般に、上面にＬＤ，ＰＤ等の光半導体素子１８が載置
される載置部１１ａを有する基体１１と、基体１１上面
の外周部に載置部１１ａを囲繞するように接合される枠
体１２とが、基体１１と枠体１２の接合面にそれぞれ設
けられた金属層を介して銀ロウ等のロウ材で接合され
る。さらに、蓋体１７と枠体１２上面とが、蓋体１７と
枠体１２上面にそれぞれ設けられた金属層を介して、金
（Ａｕ）−錫（Ｓｎ）合金半田等の低融点ロウ材で接合
される。Further, such an optical semiconductor package is
Generally, a base body 11 having a mounting portion 11a on which an optical semiconductor element 18 such as an LD or PD is mounted on an upper surface, and a frame body 12 joined to an outer peripheral portion of the upper surface of the base 11 so as to surround the mounting portion 11a. Are joined with a brazing material such as silver brazing via metal layers provided on the joining surfaces of the base body 11 and the frame body 12, respectively. Further, the lid 17 and the upper surface of the frame 12 are made of a low melting point brazing material such as gold (Au) -tin (Sn) alloy solder via metal layers provided on the lid 17 and the upper surface of the frame 12, respectively. Joined.

【０００５】また、これら基体１１や枠体１２は、アル
ミナ（Ａｌ2Ｏ3）セラミックスや窒化アルミニウム（Ａ
ｌＮ）セラミックス等のセラミックスから成る誘電体材
料から構成される。基体１１は、光半導体素子１８を支
持する支持部材、ならびに光半導体素子１８作動時に放
熱する放熱板として機能する。一方、枠体１２には、入
出力端子である高周波用ガラス端子１３，セラミック端
子１４と、透光性部材１６固定用の固定部材１５を嵌着
するために、それぞれ貫通孔または切欠部から成る取付
部１２ａ，１２ｂおよび１２ｃが形成されており、高周
波用ガラス端子１３と取付部１２ａ内周面はＡｕ−Ｓｎ
合金半田等の低融点ロウ材で、セラミック端子１４と取
付部１２ｂの内周面、および固定部材１５と取付部１２
ｃの内周面は銀ロウ等のロウ材で嵌着接合される。The base 11 and the frame 12 are made of alumina (Al 2 O 3 ) ceramic or aluminum nitride (A
1N) It is composed of a dielectric material composed of ceramics such as ceramics. The base 11 functions as a support member for supporting the optical semiconductor element 18 and a heat radiating plate for releasing heat when the optical semiconductor element 18 is operated. On the other hand, the frame 12 is formed with through holes or cutouts for fitting the high-frequency glass terminal 13 and the ceramic terminal 14 as input / output terminals and the fixing member 15 for fixing the translucent member 16. Mounting portions 12a, 12b and 12c are formed, and the high-frequency glass terminal 13 and the inner peripheral surface of the mounting portion 12a are Au-Sn.
The ceramic terminal 14 and the inner peripheral surface of the mounting portion 12b, and the fixing member 15 and the mounting portion 12
The inner peripheral surface of c is fitted and joined with a brazing material such as silver brazing.

【０００６】また、取付部１２ａに嵌着接合される高周
波用ガラス端子１３は、高周波信号を伝送する同軸ケー
ブルの一端に設けられた同軸状の接続コネクタが光半導
体パッケージの交換のために着脱可能な同軸構造を有し
ている。また、この高周波用ガラス端子１３はＦｅ−Ｎ
ｉ−Ｃｏ合金等の金属材料から成るとともに、取付部１
２ａ内周面にＡｕ−Ｓｎ合金半田等の低融点ロウ材でロ
ウ付けされるホルダー１３ｂと、このホルダー１３ｂの
内部に充填され、ホウケイ酸ガラス等のガラスから成る
低誘電率部材１３ａと、この低誘電率部材１３ａの略中
心部分に装着され、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料
から成り、光半導体パッケージの内外を導通させる金属
端子１３ｃとから成る。The high-frequency glass terminal 13 fitted and joined to the mounting portion 12a has a coaxial connector provided at one end of a coaxial cable for transmitting a high-frequency signal, which is detachable for replacing an optical semiconductor package. It has a simple coaxial structure. The high frequency glass terminal 13 is made of Fe-N
It is made of a metal material such as an i-Co alloy,
2a, a holder 13b brazed to the inner peripheral surface with a low melting point brazing material such as Au-Sn alloy solder, a low dielectric member 13a filled into the holder 13b and made of glass such as borosilicate glass, A metal terminal 13c, which is attached to a substantially central portion of the low dielectric member 13a, is made of a metal material such as an Fe-Ni-Co alloy, and conducts inside and outside the optical semiconductor package.

【０００７】この低誘電率部材１３ａは、金属端子１３
ｃを伝送する高周波信号の伝送特性を良好なものとする
ために誘電率が低く、またホルダー１３ｂと金属端子１
３ｃとの電気的絶縁用、低誘電率部材１３ａと金属端子
１３ｃとの接合用、さらには光半導体パッケージ内部の
気密保持用として機能する。[0007] The low dielectric member 13a is a metal terminal 13
In order to improve the transmission characteristics of the high-frequency signal transmitting c, the dielectric constant is low, and the holder 13b and the metal terminal 1
It functions to electrically insulate the optical semiconductor package 3c, to join the low dielectric member 13a to the metal terminal 13c, and to maintain airtightness inside the optical semiconductor package.

【０００８】また、取付部１２ｂの内周面には、Ｆｅ−
Ｎｉ−Ｃｏ合金等の金属材料から成り、外部電気回路に
接続されるリード端子１４ａと、光半導体パッケージ内
外を導出し、光半導体素子１８とリード端子１４ａとを
電気的に接続するメタライズ層１４ｂと、このメタライ
ズ層１４ｂを形成したフィードスルー型の端子形状を有
する、アルミナセラミックス，窒化アルミニウムセラミ
ックス等からなるセラミックス基体１４ｃとから構成さ
れるセラミック端子１４が、銀ロウ等のロウ材を介して
嵌着接合される。The inner peripheral surface of the mounting portion 12b has
A lead terminal 14a made of a metal material such as a Ni-Co alloy and connected to an external electric circuit; and a metallization layer 14b extending inside and outside the optical semiconductor package and electrically connecting the optical semiconductor element 18 and the lead terminal 14a. A ceramic terminal 14 composed of a ceramic base 14c made of alumina ceramics, aluminum nitride ceramics, or the like having a feed-through terminal shape formed with the metallized layer 14b is fitted via a brazing material such as silver brazing. Joined.

【０００９】また、取付部１２ｃの内周面は、Ｆｅ−Ｎ
ｉ−Ｃｏ合金，Ｆｅ−Ｎｉ合金等の金属材料から成り、
内部に光信号を伝送させる空間を有して透光性部材１
６，光ファイバ１９等を内部に設置固定するための筒状
の固定部材１５が、銀ロウ等のロウ材を介して嵌着接合
される。なお、この固定部材１５の内部には、２００〜
４００℃の融点を有するＡｕ−Ｓｎ合金半田等の低融点
ロウ材により接合され、非晶質ガラス等から成り、集光
レンズとして機能するとともに光半導体パッケージの内
部を塞ぐ透光性部材１６が設置されている。The inner peripheral surface of the mounting portion 12c is made of Fe-N
made of a metal material such as an i-Co alloy or an Fe-Ni alloy,
Light transmitting member 1 having a space for transmitting an optical signal inside
6. A tubular fixing member 15 for fixing the optical fiber 19 and the like inside is fitted and joined via a brazing material such as silver brazing. In addition, inside this fixing member 15, 200-
A translucent member 16 which is joined by a low melting point brazing material such as an Au-Sn alloy solder having a melting point of 400 ° C., is made of amorphous glass or the like, functions as a condensing lens, and blocks the inside of the optical semiconductor package is provided. Have been.

【００１０】このような光半導体パッケージの内部に
は、光半導体素子１８が載置部１１ａに樹脂接着材、ロ
ウ材等の接着材を介して接着固定されるとともに、光半
導体素子１８の各電極からボンディングワイヤ２２や内
部配線等を介して金属端子１３ｃやメタライズ層１４ｂ
に電気的に接続される。In such an optical semiconductor package, an optical semiconductor element 18 is adhered and fixed to the mounting portion 11a via an adhesive such as a resin adhesive or a brazing material. From the metal terminal 13c or the metallized layer 14b through the bonding wire 22 or the internal wiring.
Is electrically connected to

【００１１】しかる後、枠体１２の上面を、Ｆｅ−Ｎｉ
−Ｃｏ合金等の金属材料またはアルミナセラミックスや
窒化アルミニウムセラミックス等のセラミックスから成
る蓋体１７により、Ａｕ−Ｓｎ合金半田等の低融点ロウ
材を介して接合することによって、光半導体パッケージ
内部に光半導体素子１８を気密に収容しその作動性を良
好なものとする。Thereafter, the upper surface of the frame body 12 is
An optical semiconductor package is formed inside the optical semiconductor package by bonding with a lid 17 made of a metal material such as a Co alloy or a ceramic such as alumina ceramics or aluminum nitride ceramics via a low melting point brazing material such as Au-Sn alloy solder. The element 18 is housed in an airtight manner to improve its operability.

【００１２】このように、基体１１、枠体１２、高周波
用ガラス端子１３、セラミック端子１４、固定部材１
５、透光性部材１６および蓋体１７とから成る容器内部
に、光半導体素子１８を気密に収容するとともに、固定
部材１５の外側端面に光ファイバ１９と戻り光防止用の
光アイソレータ２０とが樹脂接着材で接着された金属ホ
ルダ２１を、例えばＹＡＧレーザ溶接等により接合する
ことによって製品としての光半導体装置となる。As described above, the base 11, the frame 12, the high-frequency glass terminal 13, the ceramic terminal 14, and the fixing member 1
5, an optical semiconductor element 18 is hermetically accommodated in a container including a light-transmitting member 16 and a lid 17, and an optical fiber 19 and an optical isolator 20 for preventing return light are provided on the outer end surface of the fixing member 15. An optical semiconductor device as a product is obtained by joining the metal holder 21 bonded with a resin adhesive, for example, by YAG laser welding or the like.

【００１３】このような光半導体装置は、例えば外部電
気回路から供給される高周波信号によって光半導体素子
１８を光励起させ、励起したレーザ光等の光を透光性部
材１６を通して光ファイバ１９に授受させるとともに光
ファイバ１９内を伝送させることにより、大容量の情報
を高速に伝送できる光電変換装置として機能するもので
あり、光通信分野に多く用いられる。In such an optical semiconductor device, the optical semiconductor element 18 is optically excited by, for example, a high-frequency signal supplied from an external electric circuit, and the excited fiber such as laser light is transmitted to and received from the optical fiber 19 through the translucent member 16. In addition, by transmitting the optical signal through the optical fiber 19, it functions as a photoelectric conversion device that can transmit a large amount of information at high speed, and is often used in the optical communication field.

【００１４】一方、光ファイバ１９を信号伝送用の媒体
とせず、高周波用半導体素子を内部に収容し、無線通信
分野等に用いられる所謂無線通信用の半導体パッケージ
においても、光半導体パッケージと同様に高周波用ガラ
ス端子１３を用いて高周波信号の入出力を行なう場合が
多々ある。On the other hand, the so-called wireless communication semiconductor package used in the wireless communication field or the like, in which the high-frequency semiconductor element is housed without using the optical fiber 19 as a medium for signal transmission, is similar to the optical semiconductor package. In many cases, input and output of high-frequency signals are performed using the high-frequency glass terminal 13.

【００１５】[0015]

【発明が解決しようとする課題】しかしながら、上記従
来の光半導体パッケージや無線通信用の半導体パッケー
ジ等の半導体パッケージにおいては、接続コネクタの着
脱を行なうことによって半導体パッケージの交換を行な
うため、この着脱の際に硬くて脆い性質を有する低誘電
率部材１３ａに応力が発生する。この着脱を繰り返すこ
とによって、低誘電率部材１３ａに半導体パッケージの
内外を貫通する程度までクラックが進行し、半導体パッ
ケージの内部に気密に収容されていた半導体素子が、大
気に触れ酸化等を起こし半導体素子の作動性が損なわれ
る。そのため、半導体素子と外部電気回路との高周波伝
送特性や、光半導体素子と光ファイバ１９との光の結合
効率が劣化するという問題点を有していた。However, in the above-mentioned conventional semiconductor packages such as an optical semiconductor package and a semiconductor package for wireless communication, the semiconductor package is exchanged by attaching and detaching a connector. At this time, stress is generated in the low dielectric constant member 13a having a hard and brittle property. By repeating this attachment / detachment, cracks progress to the extent that the low dielectric constant member 13a penetrates the inside and outside of the semiconductor package, and the semiconductor element that has been hermetically housed inside the semiconductor package is exposed to the air, causing oxidation and the like. The operability of the element is impaired. Therefore, there has been a problem that the high-frequency transmission characteristics between the semiconductor element and the external electric circuit and the coupling efficiency of light between the optical semiconductor element and the optical fiber 19 are deteriorated.

【００１６】また、このような半導体パッケージは、例
えば低誘電率部材１３ａが約３×１０-6／℃（室温〜４
００℃）の熱膨張係数を有するホウケイ酸ガラスから成
るとともに、ホルダー１３ａが４．５×１０-6／℃（室
温〜４００℃）の熱膨張係数を有するＦｅ−Ｎｉ−Ｃｏ
合金から成る場合には、温度サイクル試験や熱衝撃試験
等の環境試験や、半導体パッケージを実装基板に実装す
る際の熱工程によって、それらの熱膨張差に起因して、
硬くて脆い性質を有する低誘電率部材１３ａを貫通する
程度にクラックが発生し、半導体パッケージの内部に気
密に収容されていた半導体素子が大気に触れ酸化等を起
こし半導体素子の作動性が損なわれる。そのため半導体
素子と外部電気回路との高周波伝送特性や、光半導体素
子と光ファイバ１９との光の結合効率が劣化するという
問題点を有していた。Further, in such a semiconductor package, for example, the low dielectric member 13a is made of about 3 × 10 −6 / ° C. (room temperature to 4 ° C.).
Fe-Ni-Co having a thermal expansion coefficient of 4.5 × 10 −6 / ° C. (room temperature to 400 ° C.).
When made of an alloy, due to environmental tests such as temperature cycle test and thermal shock test, and the thermal process when mounting the semiconductor package on the mounting board, due to their thermal expansion difference,
Cracks are generated to the extent that they penetrate the hard and brittle low-permittivity member 13a, and the semiconductor element that is hermetically housed inside the semiconductor package is exposed to the air and oxidized, thereby impairing the operability of the semiconductor element. . For this reason, there has been a problem that the high-frequency transmission characteristics between the semiconductor element and the external electric circuit and the light coupling efficiency between the optical semiconductor element and the optical fiber 19 are deteriorated.

【００１７】また、半導体パッケージ内部に接着固定さ
れる半導体素子に電気的に接続される高周波用ガラス端
子１３を少なくとも１つ以上設ける場合に、金属端子１
３ｃを伝送する高周波信号が互いに電磁的な影響を受
け、高周波信号の伝送損失が発生するという問題点を有
していた。また、外力に対する機械的強度を強化するた
めに、基体１１，枠体１２の幅や厚み等の寸法を大きく
した場合にも、誘電体材料から成る基体１１，枠体１２
の寸法の大きさに伴って発生する誘電体損失が大きくな
り、金属端子１３ｃを伝送する高周波信号が電磁的な影
響を受け、高周波信号の伝送損失が発生するという問題
点を有していた。In the case where at least one high-frequency glass terminal 13 electrically connected to the semiconductor element bonded and fixed inside the semiconductor package is provided, the metal terminal 1
There is a problem that the high-frequency signals transmitting 3c are electromagnetically affected by each other and transmission loss of the high-frequency signals occurs. Further, when the dimensions such as the width and the thickness of the base body 11 and the frame body 12 are increased in order to enhance the mechanical strength against external force, the base body 11 and the frame body 12 made of a dielectric material are also used.
There is a problem that the dielectric loss which occurs with the size of the above becomes large, the high frequency signal transmitted through the metal terminal 13c is electromagnetically affected, and the transmission loss of the high frequency signal occurs.

【００１８】従って、本発明は上記問題点に鑑み完成さ
れたもので、その目的は、内部に収容される半導体素子
を、半導体パッケージ内部の気密性を損なわず、かつ高
周波信号が電磁的な影響を受けないようにすることによ
って、光半導体素子や半導体素子と外部電気回路との高
周波伝送特性を良好にすることにある。Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to provide a semiconductor device accommodated therein without impairing the airtightness of the inside of the semiconductor package and preventing high-frequency signals from being affected by electromagnetic effects. An object of the present invention is to improve the high-frequency transmission characteristics between an optical semiconductor element or a semiconductor element and an external electric circuit by preventing the semiconductor element from being subjected to the heat.

【００１９】[0019]

【課題を解決するための手段】本発明の半導体パッケー
ジは、上面に開口が形成され内部に半導体素子を収容す
る金属製の容器本体の側壁に形成された貫通孔または切
欠部から成る取付部に、誘電体基材の内部に、前記側壁
の外面側にそれぞれ端部が露出した上部接地導体層と、
下部接地導体層と、前記上部接地導体層と前記下部接地
導体層との略中間に位置しかつ前記側壁の内外を導通す
る線路導体層と、該線路導体層と同一面で前記線路導体
層の両側に配設された同一面接地導体層とが形成され、
かつ前記上部接地導体層と前記同一面接地導体層と前記
下部接地導体層とを前記線路導体層の両側でそれぞれ接
続する貫通導体が形成されるとともに、前記誘電体基材
の前記側壁外面側の端面に、前記上部接地導体層と前記
下部接地導体層と前記同一面接地導体層とに接合された
筒状金属部材と、前記線路導体層に接合された金属端子
とが設けられて成る入出力端子が嵌着されていることを
特徴とする。According to the present invention, there is provided a semiconductor package having an opening formed in an upper surface and having a through hole or a cutout formed in a side wall of a metal container body for housing a semiconductor element therein. Inside the dielectric substrate, an upper ground conductor layer whose ends are exposed on the outer surface side of the side wall,
A lower ground conductor layer, a line conductor layer located substantially intermediate between the upper ground conductor layer and the lower ground conductor layer and conducting inside and outside of the side wall, and a line conductor layer on the same surface as the line conductor layer. The same plane ground conductor layer disposed on both sides is formed,
And a through conductor that connects the upper ground conductor layer, the same-plane ground conductor layer, and the lower ground conductor layer on both sides of the line conductor layer is formed, and a through conductor on the side wall outer surface side of the dielectric substrate is formed. An input / output comprising an end face provided with a tubular metal member joined to the upper ground conductor layer, the lower ground conductor layer, and the same-plane ground conductor layer, and a metal terminal joined to the line conductor layer. The terminal is fitted.

【００２０】本発明は、このような構成により、高周波
用ガラス端子を用いなくてもインピーダンスの整合がと
れ、また高周波用ガラス端子を用いないため接続コネク
タの着脱を繰り返しても応力に耐え得、半導体パッケー
ジ内部の気密性を保持でき、また入出力端子を複数設け
た場合や、容器本体，枠体の幅や厚み等の寸法を大きく
した場合にも、電磁遮蔽を行なうことによって、高周波
信号が電磁的な影響を受けたり、高周波信号の伝送損失
が発生することなく、光半導体素子や半導体素子と外部
電気回路との高周波伝送特性を良好にすることができ
る。According to the present invention, with such a configuration, impedance matching can be achieved without using a high-frequency glass terminal, and since the high-frequency glass terminal is not used, the connector can withstand stress even when a connector is repeatedly attached and detached. Even when the airtightness inside the semiconductor package can be maintained, and when a plurality of input / output terminals are provided, or when the dimensions such as the width and thickness of the container body and the frame body are increased, high-frequency signals can be generated by performing electromagnetic shielding. It is possible to improve the high-frequency transmission characteristics between the optical semiconductor element or the semiconductor element and the external electric circuit without being affected by electromagnetic waves or causing transmission loss of the high-frequency signal.

【００２１】また前記入出力端子の前記側壁外面側の端
面に、前記筒状金属部材と前記金属端子との間で前記金
属端子を囲む同心状の溝を設けたことを特徴とする。こ
れにより、入出力端子の側壁外面側の端面における実効
誘電率を下げ、入出力端子部の浮遊容量を低減させて、
さらなる高周波伝送特性の向上が可能になる。Further, a concentric groove surrounding the metal terminal is provided between the cylindrical metal member and the metal terminal on an end surface of the input / output terminal on the outer surface of the side wall. As a result, the effective permittivity at the end face on the outer surface side of the side wall of the input / output terminal is reduced, and the stray capacitance of the input / output terminal portion is reduced.
It is possible to further improve high-frequency transmission characteristics.

【００２２】[0022]

【発明の実施の形態】本発明の半導体パッケージの１種
である光半導体パッケージについて、以下に詳細に説明
する。図１は本発明の光半導体パッケージの１実施形態
を示す分解斜視図であり、図２は図１の入出力端子周辺
の拡大側断面図であり、図３は図１の入出力端子の拡大
正面断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical semiconductor package, which is one type of the semiconductor package of the present invention, will be described in detail below. FIG. 1 is an exploded perspective view showing an embodiment of the optical semiconductor package of the present invention, FIG. 2 is an enlarged side sectional view around the input / output terminals of FIG. 1, and FIG. 3 is an enlarged view of the input / output terminals of FIG. It is a front sectional view.

【００２３】これらの図において、１は容器本体の底面
を構成する基体、２は容器本体の側壁用の枠体、３は入
出力端子、４は入出力端子としてのセラミック端子、５
は内部に透光性部材６や光ファイバを設置固定するため
の筒状の固定部材、６は球状レンズ等の透光性部材、７
は蓋体、８はＬＤ、ＰＤ等の光半導体素子である。これ
らの基体１、枠体２、入出力端子３、セラミック端子
４、固定部材５、透光性部材６および蓋体７とで、内部
に光半導体素子８を収容するための容器が構成される。In these figures, 1 is a base constituting the bottom of the container body, 2 is a frame for the side wall of the container body, 3 is an input / output terminal, 4 is a ceramic terminal as an input / output terminal, and 5
Is a cylindrical fixing member for installing and fixing the light transmitting member 6 and the optical fiber therein; 6 is a light transmitting member such as a spherical lens;
Denotes a lid, and 8 denotes an optical semiconductor element such as an LD or PD. The base 1, the frame 2, the input / output terminals 3, the ceramic terminals 4, the fixing member 5, the translucent member 6 and the lid 7 constitute a container for housing the optical semiconductor element 8 therein. .

【００２４】また、従来技術と同様に、固定部材５の外
側の側面には、光ファイバと戻り光防止用の光アイソレ
ータとが樹脂接着材で接着された金属ホルダが、ＹＡＧ
レーザ溶接等により接合される。As in the prior art, a metal holder in which an optical fiber and an optical isolator for preventing return light are bonded with a resin adhesive is provided on the outer side surface of the fixing member 5.
Joined by laser welding or the like.

【００２５】また、入出力端子３は、誘電体基材である
誘電体基板３ａの内部に、側壁の外面側にそれぞれ端部
が露出した上部接地導体層Ｄと、下部接地導体層Ｃと、
上部接地導体層Ｄと下部接地導体層Ｃとの略中間に位置
しかつ側壁の内外を導通する線路導体層Ａと、線路導体
層Ａと同一面で線路導体層Ａの両側に配設された同一面
接地導体層Ｂとが形成され、かつ上部接地導体層Ｄと同
一面接地導体層Ｂと下部接地導体層Ｃとを線路導体層Ａ
の両側でそれぞれ接続する貫通導体Ｅが形成されるとと
もに、誘電体基材の側壁外面側の端面に、上部接地導体
層Ｄと下部接地導体層Ｃと同一面接地導体層Ｂとに接合
された筒状金属部材３ｂと、線路導体層Ａに接合された
金属端子３ｃとが設けられて成る。The input / output terminals 3 are provided inside a dielectric substrate 3a, which is a dielectric base material, with an upper ground conductor layer D whose lower end is exposed on the outer surface side of the side wall, a lower ground conductor layer C,
A line conductor layer A which is located substantially in the middle between the upper ground conductor layer D and the lower ground conductor layer C and conducts inside and outside the side wall, and is disposed on both sides of the line conductor layer A on the same plane as the line conductor layer A. The same ground conductor layer B is formed, and the upper ground conductor layer D, the same ground conductor layer B and the lower ground conductor layer C are connected to the line conductor layer A.
Are formed on both sides of the dielectric substrate, and are joined to the upper ground conductor layer D, the lower ground conductor layer C, and the same plane ground conductor layer B on the end face on the outer surface of the side wall of the dielectric substrate. It is provided with a tubular metal member 3b and a metal terminal 3c joined to the line conductor layer A.

【００２６】この入出力端子３は、枠体２の貫通孔また
は切欠部から成る取付部２ａに嵌着接合され、光半導体
素子８の各電極からボンディングワイヤ１２’や内部配
線等を介して、外部電気回路との高周波信号の入出力を
行なう機能を有するとともに、光半導体パッケージ内部
を気密に保持する機能を有する。The input / output terminal 3 is fitted and joined to a mounting portion 2a formed of a through hole or a cutout of the frame 2, and is connected to each electrode of the optical semiconductor element 8 via a bonding wire 12 'or an internal wiring. It has a function of inputting and outputting a high-frequency signal to and from an external electric circuit, and a function of keeping the inside of the optical semiconductor package airtight.

【００２７】基体１は、光半導体素子８を支持するため
の支持部材ならびに光半導体素子８から発せられる熱を
放散するための放熱板として機能し、その上面の略中央
部に光半導体素子８を載置する載置部１ａを有してい
る。この載置部１ａに、光半導体素子８が鉛（Ｐｂ）−
錫（Ｓｎ）半田等の接着材を介して接着固定されるとと
もに、この接着材を介して光半導体素子８から発せられ
た熱が伝えられ、外部に効率良く放散され、光半導体素
子８の作動性を良好なものとする。The base 1 functions as a support member for supporting the optical semiconductor element 8 and a heat dissipation plate for dissipating heat generated from the optical semiconductor element 8. It has a mounting portion 1a for mounting. The optical semiconductor element 8 is composed of lead (Pb)-
It is bonded and fixed through an adhesive such as tin (Sn) solder, and the heat generated from the optical semiconductor element 8 is transmitted through the adhesive and is efficiently radiated to the outside. The property is good.

【００２８】また、この基体１はＦｅ−Ｎｉ−Ｃｏ合
金、Ｃｕ−Ｗ合金、Ｆｅ−Ｎｉ合金またはＦｅ−Ｃｒ合
金等の金属材料から成り、少なくとも１つの入出力端子
３の金属端子３ｃに対し、それを伝送する高周波信号が
電磁的な影響を受けないようにする所謂電磁遮蔽板とし
ても機能する。The base 1 is made of a metal material such as an Fe—Ni—Co alloy, a Cu—W alloy, an Fe—Ni alloy, or an Fe—Cr alloy. It also functions as a so-called electromagnetic shield that prevents high-frequency signals transmitting the signals from being affected by electromagnetic waves.

【００２９】なお、この基体１は、そのインゴットに圧
延加工や打ち抜き加工等の従来周知の金属加工法を施す
ことによって所定の形状に製作される。また、その表面
に耐蝕性に優れかつロウ材との濡れ性に優れる金属、具
体的には厚さ０．５〜９μｍのＮｉ層と厚さ０．５〜９
μｍのＡｕ層を順次メッキ法により被着させておくと、
基体１が酸化腐蝕するのを有効に防止することができる
とともに、基体１上面に光半導体素子８を強固に接着固
定させることができる。従って、所定の形状に製作され
た基体１の表面に０．５〜９μｍのＮｉ層や０．５〜５
μｍのＡｕ層等の金属層をメッキ法により被着させてお
くことが好ましい。The base 1 is manufactured into a predetermined shape by subjecting the ingot to a conventionally known metal working method such as rolling or punching. In addition, a metal having excellent corrosion resistance and excellent wettability with a brazing material on its surface, specifically, a Ni layer having a thickness of 0.5 to 9 μm and a thickness of 0.5 to 9
If a μm Au layer is sequentially deposited by plating,
The substrate 1 can be effectively prevented from being oxidized and corroded, and the optical semiconductor element 8 can be firmly adhered and fixed to the upper surface of the substrate 1. Therefore, a 0.5 to 9 μm Ni layer or a 0.5 to 5 μm
It is preferable that a metal layer such as an Au layer having a thickness of μm is applied by a plating method.

【００３０】このように、金属材料から成る基体１の上
面には、載置部１ａを囲繞するように、Ｆｅ−Ｎｉ−Ｃ
ｏ合金、Ｆｅ−Ｎｉ合金またはＦｅ−Ｃｒ合金等の金属
材料から成る枠体２が銀ロウ等のロウ材を介して接合さ
れる。As described above, on the upper surface of the base 1 made of a metal material, the Fe-Ni-C
The frame 2 made of a metal material such as an o-alloy, an Fe-Ni alloy, or an Fe-Cr alloy is joined via a brazing material such as a silver brazing.

【００３１】この枠体２は、少なくとも１つの入出力端
子３の金属端子３ｃに対し、それを伝送する高周波信号
が電磁的な影響を受けないようにする所謂電磁遮蔽板と
して機能するとともに、その側部に設けられた貫通孔や
切欠部から成る取付部２ａ、２ｂ、２ｃに、それぞれ入
出力端子３、セラミック端子４、固定部材５を嵌着接合
し、内側に光半導体素子８を収容するための空所を形成
する。The frame 2 functions as a so-called electromagnetic shielding plate for preventing a high-frequency signal transmitted through the metal terminal 3c of at least one input / output terminal 3 from being affected by electromagnetic waves. The input / output terminal 3, the ceramic terminal 4, and the fixing member 5 are respectively fitted to and attached to the mounting portions 2a, 2b, and 2c formed of through holes and cutouts provided on the side portions, and the optical semiconductor element 8 is housed inside. Form a void for

【００３２】なお、この枠体２は、基体１と同様にその
インゴットに圧延加工や打ち抜き加工等の従来周知の金
属加工法を施すことによって所定の形状に製作され、そ
の表面に耐蝕性に優れかつロウ材との濡れ性に優れる金
属、具体的には厚さ０．５〜９μｍのＮｉ層と厚さ０．
５〜９μｍのＡｕ層を順次メッキ法により被着させてお
くと、枠体２が酸化腐蝕するのを有効に防止することが
できるとともに、取付部２ａ、２ｂ、２ｃにそれぞれ入
出力端子３、セラミック端子４、固定部材５を強固に接
合することができる。従って、所定の形状に製作された
枠体２の表面に、０．５〜９μｍのＮｉ層や０．５〜５
μｍのＡｕ層等の金属層をメッキ法により被着させてお
くことが好ましい。The frame 2 is formed in a predetermined shape by subjecting the ingot to a well-known metal working method such as rolling or punching as in the case of the base 1, and the surface thereof has excellent corrosion resistance. In addition, a metal having excellent wettability with the brazing material, specifically, a Ni layer having a thickness of 0.5 to 9 μm and a thickness of 0.1 μm is used.
When a 5 to 9 μm Au layer is sequentially applied by plating, the oxidation and corrosion of the frame 2 can be effectively prevented, and the input / output terminals 3 and 4 are attached to the mounting portions 2a, 2b and 2c, respectively. The ceramic terminal 4 and the fixing member 5 can be firmly joined. Therefore, a 0.5 to 9 μm Ni layer or 0.5 to 5 μm is formed on the surface of the frame 2 manufactured in a predetermined shape.
It is preferable that a metal layer such as an Au layer having a thickness of μm is applied by a plating method.

【００３３】また、枠体２の取付部２ａに嵌着接合され
る入出力端子３は、その内部に、側壁の外面側にそれぞ
れ端部が露出した上部接地導体層Ｄと、下部接地導体層
Ｃと、これら上部接地導体層Ｄと下部接地導体層Ｃとの
略中央部で側壁の内外を導通する線路導体層Ａと、この
線路導体層Ａの両側に配設された同一面接地導体層Ｂと
が形成され、かつ上部接地導体層Ｄ，同一面接地導体層
Ｂ，下部接地導体層Ｃを線路導体層Ａの両側でそれぞれ
接続する貫通導体Ｅが内層された誘電体基板３ａと、枠
体２の側壁外面側の端面に、上部接地導体層Ｄと同一面
接地導体層Ｂと下部接地導体層Ｃと接合された、Ｆｅ−
Ｎｉ−Ｃｏ合金，Ｆｅ−Ｎｉ合金等の筒状の金属材料か
ら成る筒状金属部材３ｂと、線路導体層Ａと接合された
Ｆｅ−Ｎｉ−Ｃｏ合金，Ｆｅ−Ｎｉ合金等の金属材料か
ら成る金属端子３ｃとから構成されている。The input / output terminal 3 fitted and joined to the mounting portion 2a of the frame 2 has an upper ground conductor layer D having an end exposed at the outer surface of the side wall and a lower ground conductor layer inside. C, a line conductor layer A that conducts between the inside and outside of the side wall at a substantially central portion of the upper ground conductor layer D and the lower ground conductor layer C, and a coplanar ground conductor layer disposed on both sides of the line conductor layer A. B, and a dielectric substrate 3a in which a through conductor E for connecting the upper ground conductor layer D, the same plane ground conductor layer B, and the lower ground conductor layer C to both sides of the line conductor layer A is provided. On the end face on the outer surface side of the side wall of the body 2, an Fe-
A cylindrical metal member 3b made of a cylindrical metal material such as a Ni-Co alloy or an Fe-Ni alloy; and a metal material such as an Fe-Ni-Co alloy or an Fe-Ni alloy joined to the line conductor layer A. And a metal terminal 3c.

【００３４】これら上部接地導体層Ｄ、同一面接地導体
層Ｂ、下部接地導体層Ｃは、線路導体層Ａを略同軸形状
に囲むように内層されるとともに、光半導体パッケージ
内部では、同一面接地導体層Ｂ，線路導体層Ａの一端が
光半導体素子８とボンディングワイヤ１２’を介して電
気的に接続できるように表層に露出されている。さら
に、筒状金属部材３ｂで金属端子３ｃを同心円状に囲ん
だ所謂同軸構造を有している。従って、光半導体素子８
と入出力端子３との高周波信号の入出力が可能であり、
かつ内部の各接地導体層のインピーダンスの整合をとる
ことができるので、従来の高周波用ガラス端子１３（図
４）の代替を果たすことができる。The upper grounding conductor layer D, the same plane grounding conductor layer B, and the lower grounding conductor layer C are internally layered so as to surround the line conductor layer A in a substantially coaxial shape. One end of the conductor layer B and one end of the line conductor layer A are exposed on the surface layer so that they can be electrically connected to the optical semiconductor element 8 via the bonding wires 12 '. Further, it has a so-called coaxial structure in which the metal terminal 3c is concentrically surrounded by the cylindrical metal member 3b. Therefore, the optical semiconductor element 8
Input and output of high-frequency signals between the
In addition, since the impedance of each ground conductor layer inside can be matched, the conventional high-frequency glass terminal 13 (FIG. 4) can be replaced.

【００３５】また、貫通導体Ｅは、その内部が導体によ
り充填された所謂ビアホール導体とすることが高周波特
性において好ましいが、内部に完全に充填されていない
所謂スルーホール導体であってもよく、またその断面形
状も円形のほかに矩形状または楕円状としてもよい。The through conductor E is preferably a so-called via-hole conductor in which the inside is filled with a conductor in terms of high-frequency characteristics, but may be a so-called through-hole conductor in which the inside is not completely filled. The cross-sectional shape may be rectangular or elliptical in addition to circular.

【００３６】なお、これら上部接地導体層Ｄ、同一面接
地導体層Ｂ、下部接地導体層Ｃ、線路導体層Ａ、貫通導
体Ｅの長さや径等は、高周波信号の周波数やインピーダ
ンス整合および製造上の利点等を考慮して設定される。The lengths and diameters of the upper ground conductor layer D, the same ground conductor layer B, the lower ground conductor layer C, the line conductor layer A and the through conductor E are determined by the frequency and impedance matching of the high-frequency signal and the production. Is set in consideration of the advantages of the above.

【００３７】これらの線路導体層Ａ，同一面接地導体層
Ｂ，下部接地導体層Ｃ，上部接地導体層Ｄの厚さ、長
さ、層間の間隔、電気抵抗等について記述すると、まず
線路導体層Ａおよび各接地導体層の厚さは１０〜２５μ
ｍ程度が良く、１０μｍ未満ではスクリーン印刷法等に
より形成することが困難であり、２５μｍを超えると枠
体２の側壁を構成するセラミックス等の層間にデラミネ
ーションが発生するおそれがある。線路導体層Ａおよび
各接地導体層の長さは０．３〜２．０mm程度が良く、
０．３mm未満では、側壁が薄くなるため側壁を構成する
セラミックス等の外力に対する機械的強度が弱くなり易
く、２．０mmを超えると電気抵抗が大きくなる。The thickness, length, distance between layers, electric resistance, etc. of the line conductor layer A, the same plane ground conductor layer B, the lower ground conductor layer C, and the upper ground conductor layer D are described first. A and the thickness of each ground conductor layer are 10 to 25 μm.
If the thickness is less than 10 μm, it is difficult to form the film by a screen printing method or the like. If the thickness exceeds 25 μm, delamination may occur between layers of ceramics or the like constituting the side wall of the frame 2. The length of the line conductor layer A and each ground conductor layer is preferably about 0.3 to 2.0 mm,
If the thickness is less than 0.3 mm, the side wall becomes thin, so that the mechanical strength against external force of the ceramics or the like constituting the side wall tends to be weak. If the thickness exceeds 2.0 mm, the electric resistance increases.

【００３８】さらに、線路導体層Ａと上部接地導体層Ｄ
との間隔、および線路導体層Ａと下部接地導体層Ｃとの
間隔は、０．１〜２．０mm程度がよく、０．１mm未満で
は、容器本体をセラミック多層体により作製する際にグ
リーンテープの厚さがばらつき易くなり、その製造が困
難になる。２．０mmを超えると、上部接地導体層Ｄおよ
び下部接地導体層Ｃの位置が接続コネクタの外周径より
も大きい個所となり、接続コネクタからの高周波信号が
反射されて伝送損失を起こす。Further, the line conductor layer A and the upper ground conductor layer D
And the distance between the line conductor layer A and the lower ground conductor layer C are preferably about 0.1 to 2.0 mm. If the distance is less than 0.1 mm, the green tape is used when the container body is made of a ceramic multilayer body. Thickness tends to vary, making its manufacture difficult. If the thickness exceeds 2.0 mm, the positions of the upper ground conductor layer D and the lower ground conductor layer C are located at positions larger than the outer diameter of the connector, and a high-frequency signal from the connector is reflected to cause transmission loss.

【００３９】また、線路導体層Ａと同一面接地導体層Ｂ
との間隔は０．０５〜２．０mm程度が良く、０．０５mm
未満では、絶縁ギャップが小さすぎてショートする危険
性があり、２．０mmを超えると、上部接地導体層Ｄおよ
び下部接地導体層Ｃの位置が接続コネクタの外周径より
も大きい個所となり、接続コネクタからの高周波信号が
反射されて伝送損失を起こす。The ground conductor layer B on the same plane as the line conductor layer A
The distance between is preferably about 0.05 to 2.0 mm, and 0.05 mm
If it is less than 2.0 mm, there is a danger that the insulation gap will be too small to cause a short circuit. If it exceeds 2.0 mm, the positions of the upper grounding conductor layer D and the lower grounding conductor layer C will be locations larger than the outer diameter of the connector. The high-frequency signal from is reflected and causes transmission loss.

【００４０】これらの線路導体層Ａおよび各接地導体層
の電気抵抗は、特に限定するものではないが小さいほど
よい。The electrical resistances of the line conductor layer A and the ground conductor layers are not particularly limited, but are preferably as small as possible.

【００４１】また、線路導体層Ａ、同一面接地導体層
Ｂ、下部接地導体層Ｃ、上部接地導体層Ｄ、貫通導体Ｅ
は、セラミックスから成る誘電体基板３ａに、Ｗ，Ｍ
ｏ，Ｍｎ，Ｃｕ等を厚膜で形成する厚膜積層法や、Ｃ
ｒ，Ｃｕ，窒化タンタル（Ｔａ2Ｎ），ニクロム合金
（Ｎｉ−Ｃｒ），Ａｕ等を薄膜で形成する薄膜積層法等
で設けられたり、Ｆｅ−Ｎｉ−Ｃｏ合金板、Ｃｕ板等を
樹脂から成る誘電体基板３ａにトランスファモールドに
よる一体成形で設けられる。The line conductor layer A, the ground conductor layer B on the same plane, the lower ground conductor layer C, the upper ground conductor layer D, the through conductor E
Are W, M on a dielectric substrate 3a made of ceramics.
o, Mn, Cu, etc. as a thick film
r, Cu, tantalum nitride (Ta 2 N), nichrome alloy (Ni—Cr), Au, etc., formed by a thin film lamination method of forming a thin film, or an Fe—Ni—Co alloy plate, a Cu plate, or the like from a resin. It is provided on the dielectric substrate 3a by integral molding by transfer molding.

【００４２】なお、誘電体基板３ａがセラミックスから
成る場合、例えばＷ等の粉末に有機溶剤、溶媒を添加混
合して得た金属ペーストを、誘電体基板３ａとなるセラ
ミックスグリーンシートに予め従来周知のスクリーン印
刷法により所定パターンに印刷塗布し焼結することによ
って形成される。When the dielectric substrate 3a is made of ceramics, for example, a metal paste obtained by adding an organic solvent and a solvent to a powder of W or the like is applied to a ceramic green sheet serving as the dielectric substrate 3a in advance by a known method. It is formed by printing, applying and sintering a predetermined pattern by a screen printing method.

【００４３】一方、誘電体基板３ａが樹脂から成る場合
には、誘電体基板３ａをトランスファモールドにより形
成する際に、予め金型内の所定位置に所定形状の例えば
Ｃｕ板をセットしておくことによって樹脂と一体的に形
成される。On the other hand, when the dielectric substrate 3a is made of resin, when the dielectric substrate 3a is formed by transfer molding, for example, a Cu plate having a predetermined shape is set in a predetermined position in a mold in advance. Is formed integrally with the resin.

【００４４】なお、筒状金属部材３ｂと、上部接地導体
層Ｄ、同一面接地導体層Ｂ、下部接地導体層Ｃとの接
合、および金属端子３ｃと線路導体層Ａとの接合は、そ
れらの接合強度を強化するために、間にＷ，Ｍｏ，Ｍ
ｎ，Ｃｕ，Ｆｅ−Ｎｉ−Ｃｏ合金等から成るとともに、
筒状金属部材３ｂ、金属端子３ｃの径よりもそれぞれや
や大きい金属パッド３ｂ’，３ｃ’を形成してもよい。
その場合、それらの接合強度は、それらが銀ロウ等のロ
ウ材を介して接合された際にメニスカスが形成されるた
め非常に強化される。The connection between the cylindrical metal member 3b and the upper ground conductor layer D, the same plane ground conductor layer B and the lower ground conductor layer C, and the connection between the metal terminal 3c and the line conductor layer A are defined by In order to enhance the bonding strength, W, Mo, M
n, Cu, Fe-Ni-Co alloy, etc.
Metal pads 3b 'and 3c' slightly larger than the diameters of the cylindrical metal member 3b and the metal terminal 3c may be formed.
In that case, their bonding strength is greatly enhanced because a meniscus is formed when they are bonded via a brazing material such as silver brazing.

【００４５】また、これらの金属パッド３ｂ’，３ｃ’
を形成する場合は、金属パッド３ｂ’，３ｃ’の間の誘
電体基板３ａの側面に、金属パッド３ｂ’，３ｃ’を形
成しない場合は、筒状金属部材３ｂと金属端子３ｃとの
間の誘電体基板３ａの側面に、金属端子３ｃの周囲に同
心状に溝３ｄを設けることによって、この部位に空気の
層が形成されるため実効誘電率を下げることができる。
そのため、入出力端子部の浮遊容量が低減されて、さら
なる高周波伝送特性の向上が可能となる。The metal pads 3b 'and 3c'
Is formed on the side surface of the dielectric substrate 3a between the metal pads 3b 'and 3c', and when the metal pads 3b 'and 3c' are not formed, the portion between the cylindrical metal member 3b and the metal terminal 3c is formed. By providing the groove 3d concentrically around the metal terminal 3c on the side surface of the dielectric substrate 3a, an air layer is formed at this portion, so that the effective dielectric constant can be reduced.
Therefore, the stray capacitance of the input / output terminal portion is reduced, and the high-frequency transmission characteristics can be further improved.

【００４６】なお、この溝３ｄは、その幅は０．１ｍｍ
以上で金属パッド３ｂ’，３ｃ’または筒状金属部材３
ｂ，金属端子３ｃに接触しない程度以下であり、かつ深
さが５０μｍ以上１．０ｍｍ以下としたほうが好まし
い。幅が０．１ｍｍ未満かつ深さが５０μｍ未満では、
実効誘電率を下げることが困難であるとともに、その加
工性が非常に悪い。一方、幅が金属パッド３ｂ’，３
ｃ’または筒状金属部材３ｂ，金属端子３ｃに接触する
程度以上の大きさでは、筒状金属部材３ｂと金属パッド
３ｂ’とのロウ付け部、ならびに金属端子３ｃと金属パ
ッド３ｃ’とのロウ付け部が小さくなり、メニスカス形
成が困難となったり、筒状金属部材３ｂや金属端子３ｃ
に傷等の欠陥を与えてしまい、高周波信号の伝送特性が
損なわれるおそれがある。また、深さが１．０ｍｍを超
える場合、側壁内部の各接地導体層のインピーダンスの
整合が困難となる傾向がる。The width of the groove 3d is 0.1 mm.
The metal pads 3b 'and 3c' or the cylindrical metal member 3
b, It is more preferable that the depth is not more than the extent not contacting the metal terminal 3c and the depth is not less than 50 μm and not more than 1.0 mm. If the width is less than 0.1 mm and the depth is less than 50 μm,
It is difficult to lower the effective dielectric constant, and its workability is very poor. On the other hand, the width of the metal pad 3b ', 3
In the case of c ′ or a size larger than the extent of contact with the cylindrical metal member 3b and the metal terminal 3c, a brazing portion between the cylindrical metal member 3b and the metal pad 3b ′ and a brazing portion between the metal terminal 3c and the metal pad 3c ′. The attachment portion becomes small, forming a meniscus becomes difficult, or the cylindrical metal member 3b or the metal terminal 3c
This may result in defects such as scratches, which may impair the transmission characteristics of high-frequency signals. If the depth exceeds 1.0 mm, it tends to be difficult to match the impedance of each ground conductor layer inside the side wall.

【００４７】溝３ｄは金属端子３ｃの周囲に金属端子３
ｃと同心状に形成されるものであり、その平面視形状
は、円形、楕円形または三角形，四角形等の多角形等と
し得る。また、金属端子３ｃの周囲の全周に必ずしも設
ける必要はなく、部分円弧状のものを９０°間隔で４個
設ける等の配置を行ってもよい。The groove 3d is provided around the metal terminal 3c.
It is formed concentrically with c, and its plan view shape may be a circle, an ellipse, or a polygon such as a triangle or a quadrangle. Further, it is not always necessary to provide them on the entire circumference around the metal terminals 3c, and arrangements such as providing four arc-shaped parts at 90 ° intervals may be performed.

【００４８】また、枠体２の側壁に、内外を貫通する貫
通孔または内外を貫通するように切り欠いて形成される
切欠部から成る取付部２ｂが形成され、その内周面に
は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成り、外部
電気回路に接続されるリード端子４ａと、光半導体パッ
ケージ内外を導出し、光半導体素子８とリード端子４ａ
とを電気的に接続するメタライズ層４ｂと、このメタラ
イズ層４ｂを形成した端子形状を有する、アルミナセラ
ミックス，窒化アルミニウムセラミックス等のセラミッ
クスから成るセラミック基板４ｃとから構成される、セ
ラミック端子４が銀ロウ等のロウ材を介して嵌着接合さ
れる。A mounting portion 2b is formed in the side wall of the frame 2 and is formed of a through hole penetrating the inside and outside or a cutout portion formed by cutting out the inside and outside. A lead terminal 4a made of a metal material such as a Ni-Co alloy and connected to an external electric circuit;
The ceramic terminal 4 is composed of a metallized layer 4b for electrically connecting the same and a ceramic substrate 4c made of ceramics such as alumina ceramics or aluminum nitride ceramics having a terminal shape on which the metallized layer 4b is formed. Are fitted and joined via a brazing material such as

【００４９】このセラミック端子４は、光半導体素子８
と外部電気回路とを電気的に接続するための信号伝送用
の媒体として機能するとともに、その外周がロウ材を介
して嵌着接合されて光半導体パッケージ内部を気密に保
持する。The ceramic terminal 4 is connected to the optical semiconductor element 8
Functions as a signal transmission medium for electrically connecting the optical semiconductor device and an external electric circuit, and its outer periphery is fitted and joined via a brazing material to keep the inside of the optical semiconductor package airtight.

【００５０】また、枠体２の他の側壁には、内外を貫通
するように形成された貫通孔等の取付部２ｃ周囲の枠体
２の外面側に、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金
等の金属材料から成る固定部材５が、光半導体パッケー
ジの内外で光信号が伝送されるように筒状に形成される
とともに、銀ロウ等のロウ材を介して接合される。The other side wall of the frame 2 is provided with an Fe-Ni-Co alloy or a Fe-Ni-Co alloy on the outer surface side of the frame 2 around a mounting portion 2c such as a through hole formed so as to penetrate inside and outside. A fixing member 5 made of a metal material such as a Ni alloy is formed in a cylindrical shape so that an optical signal is transmitted inside and outside the optical semiconductor package, and is joined via a brazing material such as a silver brazing.

【００５１】この固定部材５の内周面には、集光レンズ
として機能するとともに光半導体パッケージの内部を塞
ぐ非晶質ガラス等から成る透光性部材６が、その接合部
の表面に形成されたメタライズ層を介して、２００〜４
００℃の融点を有するＡｕ−Ｓｎ合金半田等の低融点ロ
ウ材で接合される。On the inner peripheral surface of the fixing member 5, a translucent member 6 made of amorphous glass or the like which functions as a condenser lens and closes the inside of the optical semiconductor package is formed on the surface of the joint. 200-4 through the metallized layer
It is joined with a low melting point brazing material such as an Au-Sn alloy solder having a melting point of 00 ° C.

【００５２】この透光性部材６は、熱膨張係数が４〜１
２×１０-6／℃（室温〜４００℃）のサファイア（単結
晶アルミナ）や非晶質ガラス等から成り、球状、半球
状、凸レンズ状、ロッドレンズ状等とされ、外部のレー
ザ光等の光を光ファイバにより伝送させて光半導体素子
８に入力させる、または光半導体素子８で出力したレー
ザ光等の光を光ファイバに入力させるための集光用部材
として用いられる。透光性部材６が、例えば結晶軸の存
在しない非晶質ガラスの場合、ＳｉＯ2，酸化鉛（Ｐｂ
Ｏ）を主成分とする鉛系、またはホウ酸やケイ砂を主成
分とするホウケイ酸系のものを用いる。The translucent member 6 has a thermal expansion coefficient of 4-1.
It is made of sapphire (single crystal alumina) or amorphous glass at 2 × 10 −6 / ° C. (room temperature to 400 ° C.), and has a spherical shape, a hemispherical shape, a convex lens shape, a rod lens shape, and the like. The light is transmitted as an optical fiber to be input to the optical semiconductor element 8, or is used as a condensing member for inputting light such as laser light output from the optical semiconductor element 8 to the optical fiber. When the translucent member 6 is, for example, amorphous glass having no crystal axis, SiO 2 , lead oxide (Pb
O) as a main component, or a borosilicate type containing boric acid or silica sand as a main component is used.

【００５３】また、この透光性部材６は、その熱膨張係
数が枠体２のそれと異なっていても固定部材５が熱膨張
差による応力を吸収し緩和するので、結晶軸が応力のた
めにある方向に揃うことによって光の屈折率の変化を起
こすようなことは発生しにくい。従って、このような透
光性部材６を用いることによって、光半導体素子８と光
ファイバとの間の光の結合効率を高くできる。Further, even if the translucent member 6 has a different coefficient of thermal expansion from that of the frame 2, the fixing member 5 absorbs and relaxes the stress due to the difference in thermal expansion, so that the crystal axis is reduced due to the stress. It is unlikely that the alignment in a certain direction causes a change in the refractive index of light. Therefore, by using such a translucent member 6, the light coupling efficiency between the optical semiconductor element 8 and the optical fiber can be increased.

【００５４】また、蓋体７はＦｅ−Ｎｉ−Ｃｏ合金等の
金属材料やアルミナセラミックス等のセラミックスから
成るとともに、枠体２の上面にＡｕ−Ｓｎ合金半田等の
低融点ロウ材を介して接合されたり、ＹＡＧレーザ溶接
等による溶接によって接合され、光半導体素子８を光半
導体パッケージ内に封止する。The lid 7 is made of a metal material such as an Fe-Ni-Co alloy or a ceramic such as alumina ceramics, and is joined to the upper surface of the frame 2 via a low melting point brazing material such as an Au-Sn alloy solder. The optical semiconductor element 8 is sealed in the optical semiconductor package by welding or bonding by YAG laser welding or the like.

【００５５】このように、本発明の半導体パッケージの
１種である光半導体パッケージは、上面に光半導体素子
８の載置部１ａを有し、金属材料から成る基体１と、こ
の基体１の上面に、載置部１ａを囲繞するようにロウ材
を介して接合され、側部に入出力端子３を嵌着接合する
ための取付部２ａが形成され、金属材料から成る枠体２
と、接続コネクタの着脱の際の応力に耐え得、筒状金属
部材３ｂと金属端子３ｃとから成り、取付部２ａに嵌着
接合される入出力端子３とを具備する。As described above, the optical semiconductor package, which is one type of the semiconductor package of the present invention, has the mounting portion 1a of the optical semiconductor element 8 on the upper surface, and the base 1 made of a metal material and the upper surface of the base 1 And a frame 2 made of a metal material, which is joined with a brazing material so as to surround the mounting portion 1a, and a fitting portion 2a for fitting and joining the input / output terminal 3 is formed on a side portion.
And an input / output terminal 3 which can withstand the stress at the time of attachment / detachment of the connection connector, is composed of a cylindrical metal member 3b and a metal terminal 3c, and is fitted and joined to the mounting portion 2a.

【００５６】この入出力端子３は、誘電体基板３ａの内
部に、側壁の外面側にそれぞれ端部が露出した上部接地
導体層Ｄと、下部接地導体層Ｃと、上部接地導体層Ｄと
下部接地導体層Ｃとの略中間に位置しかつ側壁の内外を
導通する線路導体層Ａと、線路導体層Ａと同一面で線路
導体層Ａの両側に配設された同一面接地導体層Ｂとが形
成され、かつ上部接地導体層Ｄと同一面接地導体層Ｂと
下部接地導体層Ｃとを線路導体層Ａの両側でそれぞれ接
続する貫通導体Ｅが形成されており、これらがインピー
ダンスの整合をとる構造を有している。The input / output terminal 3 is provided inside the dielectric substrate 3a with the upper ground conductor layer D, the lower ground conductor layer C, the upper ground conductor layer D and the lower ground conductor layer D, the ends of which are exposed on the outer surface side of the side walls. A line conductor layer A located substantially at the middle of the ground conductor layer C and conducting between the inside and outside of the side wall; and a ground conductor layer B on the same plane as the line conductor layer A and disposed on both sides of the line conductor layer A. And a through conductor E connecting the ground conductor layer B on the same plane as the upper ground conductor layer D and the lower ground conductor layer C on both sides of the line conductor layer A is formed. It has a structure to take.

【００５７】また、入出力端子３の誘電体基板３ａの枠
体２の側壁外面側の端面で、上部接地導体層Ｄと下部接
地導体層Ｃと同一面接地導体層Ｂとは筒状金属部材３ｂ
に接合され、線路導体層Ａは金属端子３ｃに接合され
る。また、筒状金属部材３ｂと金属端子３ｃとの間の誘
電体基板３ａに、または金属パッド３ｂ’と金属パッド
３ｃ’との間の誘電体基板３ａに、溝３ｄを設けること
により、実効誘電率を下げ、入出力端子部の浮遊容量を
低減させて、さらなる高周波伝送特性の向上を可能とす
る。At the end face of the input / output terminal 3 on the outer surface of the side wall of the frame 2 of the dielectric substrate 3a, the upper ground conductor layer D, the lower ground conductor layer C, and the same plane ground conductor layer B are cylindrical metal members. 3b
And the line conductor layer A is joined to the metal terminal 3c. Further, by providing a groove 3d in the dielectric substrate 3a between the cylindrical metal member 3b and the metal terminal 3c or in the dielectric substrate 3a between the metal pad 3b 'and the metal pad 3c', the effective dielectric The ratio is reduced, the stray capacitance of the input / output terminal is reduced, and the high-frequency transmission characteristics can be further improved.

【００５８】本発明の半導体パッケージは、光半導体パ
ッケージの場合には光半導体素子８を、無線通信用の半
導体パッケージの場合には高周波用の半導体素子を、そ
れぞれ収納して外部電気回路と各種半導体素子が高周波
信号の入出力を行なう半導体パッケージ等として構成さ
れるものであり、光半導体パッケージの場合には、枠体
２の側部に内外を貫通する取付部２ａを形成し、この取
付部２ａに入出力端子３を嵌着接合する。そして、セラ
ミック端子４を嵌着接合する取付部２ｂにはセラミック
端子４を、また金属材料から成る筒状の固定部材４を嵌
着接合する取付部２ｃには固定部材５を嵌着接合し、こ
の固定部材５の内部に光半導体素子８と光ファイバとの
間で光を集光させ結合させる透光性部材６が接合され
る。そして、光半導体素子８と線路導体層Ａの一端とを
ボンディングワイヤ１２’によって接合した後に、枠体
２の上面に光半導体素子８を封止するための蓋体７を従
来周知の溶接法等で接合する。しかる後に、光ファイバ
を固定部材５にＹＡＧレーザ溶接等によって接合し、固
定部材５の外側の端面に、光ファイバと戻り光防止用の
光アイソレータとが樹脂接着材で接着された金属ホルダ
を、ＹＡＧレーザ溶接等により接合することによって、
製品としての光半導体装置となる。The semiconductor package of the present invention contains an optical semiconductor element 8 in the case of an optical semiconductor package and a high-frequency semiconductor element in the case of a semiconductor package for wireless communication, and accommodates an external electric circuit and various semiconductors. The element is configured as a semiconductor package or the like for inputting and outputting a high-frequency signal. In the case of an optical semiconductor package, a mounting portion 2a penetrating inside and outside is formed on a side portion of the frame 2, and the mounting portion 2a is formed. The input / output terminal 3 is fitted and joined. The ceramic terminal 4 is fitted to the mounting portion 2b for fitting and joining the ceramic terminal 4, and the fixing member 5 is fitted to the fitting portion 2c for fitting and joining the cylindrical fixing member 4 made of a metal material. A translucent member 6 for condensing and coupling light between the optical semiconductor element 8 and the optical fiber is joined inside the fixing member 5. Then, after joining the optical semiconductor element 8 and one end of the line conductor layer A with a bonding wire 12 ′, a lid 7 for sealing the optical semiconductor element 8 is sealed on the upper surface of the frame 2 by a conventionally known welding method or the like. Join with. Thereafter, the optical fiber is joined to the fixing member 5 by YAG laser welding or the like, and a metal holder in which the optical fiber and the optical isolator for preventing return light are bonded to the outer end surface of the fixing member 5 with a resin adhesive is used. By joining by YAG laser welding, etc.,
It becomes an optical semiconductor device as a product.

【００５９】かくして、本発明は、入出力端子３が高周
波信号の伝送効率が向上するとともにインピーダンスの
整合がとり易い擬似同軸構造となっているとともに、こ
の構造の部位に接続コネクタの着脱が可能な入出力端子
３が接合される構造となっている。その結果、従来の高
周波用ガラス端子１３に代替できるとともに、低誘電率
部材１３ａを用いないので、接続コネクタの着脱の際の
応力に十分に耐え得ることができ、半導体パッケージ内
部の気密性を損なうことがない。Thus, according to the present invention, the input / output terminal 3 has a pseudo-coaxial structure that improves the transmission efficiency of the high-frequency signal and facilitates impedance matching, and allows the connection connector to be attached to and detached from the structure. The input / output terminals 3 are joined. As a result, the conventional high-frequency glass terminal 13 can be substituted, and the low dielectric constant member 13a is not used, so that it is possible to sufficiently withstand the stress at the time of attaching / detaching the connector and impair the airtightness inside the semiconductor package. Nothing.

【００６０】また、筒状金属部材３ｂと金属端子３ｃと
の間の誘電体基板３ａ、または金属パッド３ｂ’と金属
パッド３ｃ’との間の誘電体基板３ａに溝３ｄを設ける
ことにより、実効誘電率を下げ、入出力端子部の浮遊容
量を低減させて、さらなる高周波伝送特性の向上が可能
になる。また、基体１と枠体２とが金属材料から成って
いるため、入出力端子３を複数設けた場合や、基体１，
枠体２の幅や厚み等の寸法を大きくした場合にも、電磁
遮蔽を行なうことによって、高周波信号が電磁的な影響
を受けてノイズが発生したり高周波信号の伝送損失が発
生することがない。従って、光半導体素子や半導体素子
と外部電気回路との高周波伝送特性を良好なものとでき
る。The groove 3d is provided in the dielectric substrate 3a between the cylindrical metal member 3b and the metal terminal 3c or in the dielectric substrate 3a between the metal pad 3b 'and the metal pad 3c', so that the effective The dielectric constant is reduced, the stray capacitance of the input / output terminal is reduced, and the high-frequency transmission characteristics can be further improved. Further, since the base 1 and the frame 2 are made of a metal material, a case where a plurality of input / output terminals 3 are provided,
Even when the dimensions such as the width and thickness of the frame body 2 are increased, the electromagnetic shielding prevents the high-frequency signal from being electromagnetically affected, thereby preventing noise or transmission loss of the high-frequency signal. . Therefore, high-frequency transmission characteristics between the optical semiconductor element or the semiconductor element and the external electric circuit can be improved.

【００６１】なお、本発明は、上記実施の形態に限定さ
れず、本発明の要旨を逸脱しない範囲内において種々の
変更を行なうことは何等支障ない。It should be noted that the present invention is not limited to the above-described embodiment, and that various changes may be made without departing from the scope of the present invention.

【００６２】例えば、図６に示すように基体１の上面に
直接入出力端子３を嵌着接合してもよく、この場合には
入出力端子３の下面に枠体２がないために半導体パッケ
ージの低背化が可能となる。また、基体１と枠体２とを
一体化させたような容器本体とすることもできる。さら
には、上記実施形態では入出力端子３用の誘電体基材の
断面形状は矩形状のものであるが、その断面形状は円形
状等であってもよい。For example, as shown in FIG. 6, the input / output terminals 3 may be directly fitted to and joined to the upper surface of the base 1. In this case, since there is no frame 2 on the lower surface of the input / output terminals 3, the semiconductor package Height can be reduced. Further, a container body in which the base 1 and the frame 2 are integrated may be provided. Further, in the above embodiment, the cross-sectional shape of the dielectric base material for the input / output terminal 3 is rectangular, but the cross-sectional shape may be circular or the like.

【００６３】[0063]

【発明の効果】本発明は、金属製の容器本体の側壁に形
成された取付部に、誘電体基材の内部に、側壁の外面側
にそれぞれ端部が露出した上部接地導体層と、下部接地
導体層と、上部接地導体層と下部接地導体層との略中間
に位置しかつ側壁の内外を導通する線路導体層と、線路
導体層と同一面で線路導体層の両側に配設された同一面
接地導体層とが形成され、かつ上部接地導体層と同一面
接地導体層と下部接地導体層とを線路導体層の両側でそ
れぞれ接続する貫通導体が形成されるとともに、誘電体
基材の側壁外面側の端面に、上部接地導体層と下部接地
導体層と同一面接地導体層とに接合された筒状金属部材
と、線路導体層に接合された金属端子とが設けられて成
る入出力端子が嵌着されていることにより、入出力端子
が高周波信号の伝送効率が高くインピーダンスの整合が
とり易い擬似同軸構造となっているとともに、この部位
に接続コネクタの着脱が可能な入出力端子が接合される
構造となっているため、従来の高周波用ガラス端子と代
替できるとともに、低誘電率部材を用いないので接続コ
ネクタの着脱の際の応力に十分に耐え得ることができ、
半導体パッケージ内部の気密性を損なうことがない。According to the present invention, there are provided an upper grounding conductor layer having ends exposed on the outer surface side of the side wall, a lower grounding layer, a mounting portion formed on a side wall of a metal container body, and a lower portion. A ground conductor layer, a line conductor layer located approximately in the middle between the upper ground conductor layer and the lower ground conductor layer and conducting inside and outside of the side wall, and disposed on both sides of the line conductor layer on the same plane as the line conductor layer A coplanar ground conductor layer is formed, and a through conductor is formed to connect the upper ground conductor layer, the coplanar ground conductor layer and the lower ground conductor layer on both sides of the line conductor layer, respectively. An input / output comprising a tubular metal member joined to an upper ground conductor layer, a lower ground conductor layer, and the same plane ground conductor layer, and a metal terminal joined to a line conductor layer, on an end face on the outer side surface of the side wall. Since the terminals are fitted, the input / output terminals can transmit high-frequency signals. It has a pseudo-coaxial structure with high efficiency and easy impedance matching, and a structure where the input / output terminal to which the connector can be attached and detached is joined to this part, replacing the conventional high-frequency glass terminal. As well as being able to sufficiently withstand the stress of attaching and detaching the connector because no low dielectric member is used,
The airtightness inside the semiconductor package is not impaired.

【００６４】また、容器本体と枠体とが金属材料から成
っているため、入出力端子を複数設けた場合や、容器本
体、枠体の幅や厚み等の寸法を大きくした場合にも、電
磁遮蔽を行なうことによって、高周波信号が電磁的な影
響を受けてノイズが発生したり高周波信号の伝送損失が
発生することがない。従って、光半導体素子や半導体素
子と外部電気回路との高周波伝送特性を良好なものとで
きる。Further, since the container body and the frame are made of a metal material, even when a plurality of input / output terminals are provided, or when the dimensions such as the width and thickness of the container body and the frame are increased, the electromagnetic force is reduced. By performing the shielding, the high-frequency signal is not electromagnetically affected to generate noise and no transmission loss of the high-frequency signal occurs. Therefore, high-frequency transmission characteristics between the optical semiconductor element or the semiconductor element and the external electric circuit can be improved.

【００６５】また、入出力端子の側壁外面側の端面に、
筒状金属部材と金属端子との間で金属端子を囲む同心状
の溝を設けたことにより、実効誘電率を下げ、入出力端
子部の浮遊容量を低減させて、さらなる高周波伝送特性
の向上が可能になる。Further, the end face of the input / output terminal on the outer side of the side wall is
By providing a concentric groove surrounding the metal terminal between the cylindrical metal member and the metal terminal, the effective dielectric constant is reduced, the stray capacitance of the input / output terminals is reduced, and the high-frequency transmission characteristics are further improved. Will be possible.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の半導体パッケージの一実施形態を示す
分解斜視図である。FIG. 1 is an exploded perspective view showing one embodiment of a semiconductor package of the present invention.

【図２】図１の半導体パッケージ用の入出力端子周辺の
拡大側断面図である。FIG. 2 is an enlarged side sectional view around the input / output terminals for the semiconductor package of FIG. 1;

【図３】図１の半導体パッケージ用の入出力端子の拡大
正面断面図である。FIG. 3 is an enlarged front sectional view of an input / output terminal for the semiconductor package of FIG. 1;

【図４】従来の半導体パッケージの分解斜視図である。FIG. 4 is an exploded perspective view of a conventional semiconductor package.

【図５】図４の半導体パッケージ用の入出力端子周辺の
拡大側断面図である。FIG. 5 is an enlarged side sectional view around the input / output terminals for the semiconductor package of FIG. 4;

【図６】本発明の他の実施形態を示す入出力端子周辺の
拡大側断面図である。FIG. 6 is an enlarged side sectional view around an input / output terminal showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１：基体 １ａ：載置部 ２：枠体 ２ａ，２ｂ，２ｃ：取付部 ３：入出力端子 ３ａ：誘電体基板 ３ｂ：筒状金属部材 ３ｃ：金属端子 ３ｄ：溝 ８：半導体素子 Ａ：線路導体層 Ｂ：同一面接地導体層 Ｃ：下部接地導体層 Ｄ：上部接地導体層 Ｅ：貫通導体 1: base 1a: mounting portion 2: frame 2a, 2b, 2c: mounting portion 3: input / output terminal 3a: dielectric substrate 3b: cylindrical metal member 3c: metal terminal 3d: groove 8: semiconductor element A: line Conductor layer B: Ground conductor layer on the same plane C: Lower ground conductor layer D: Upper ground conductor layer E: Through conductor

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】上面に開口が形成され内部に半導体素子を
収容する金属製の容器本体の側壁に形成された貫通孔ま
たは切欠部から成る取付部に、 誘電体基材の内部に、前記側壁の外面側にそれぞれ端部
が露出した上部接地導体層と、下部接地導体層と、前記
上部接地導体層と前記下部接地導体層との略中間に位置
しかつ前記側壁の内外を導通する線路導体層と、該線路
導体層と同一面で前記線路導体層の両側に配設された同
一面接地導体層とが形成され、かつ前記上部接地導体層
と前記同一面接地導体層と前記下部接地導体層とを前記
線路導体層の両側でそれぞれ接続する貫通導体が形成さ
れるとともに、前記誘電体基材の前記側壁外面側の端面
に、前記上部接地導体層と前記下部接地導体層と前記同
一面接地導体層とに接合された筒状金属部材と、前記線
路導体層に接合された金属端子とが設けられて成る入出
力端子が嵌着されていることを特徴とする半導体素子収
納用パッケージ。An opening is formed in the upper surface, and a mounting portion comprising a through hole or a cutout formed in a side wall of a metal container body for housing a semiconductor element therein, wherein the side wall is formed inside a dielectric base material. An upper ground conductor layer whose ends are exposed on the outer surface side thereof, a lower ground conductor layer, and a line conductor which is located substantially in the middle between the upper ground conductor layer and the lower ground conductor layer and conducts inside and outside of the side wall. A ground conductor layer disposed on both sides of the line conductor layer on the same plane as the line conductor layer, and the upper ground conductor layer, the same plane ground conductor layer, and the lower ground conductor A through conductor is formed to connect the upper ground conductor layer and the lower ground conductor layer to the same end surface of the dielectric base material on the outer side surface of the side wall. Cylindrical metal part joined to ground conductor layer An input / output terminal comprising a material and a metal terminal joined to the line conductor layer is fitted. 【請求項２】前記入出力端子の前記側壁外面側の端面
に、前記筒状金属部材と前記金属端子との間で前記金属
端子を囲む同心状の溝を設けたことを特徴とする請求項
１記載の半導体素子収納用パッケージ。2. A concentric groove surrounding the metal terminal between the cylindrical metal member and the metal terminal is provided on an end face of the input / output terminal on the outer surface of the side wall. 2. The package for accommodating a semiconductor element according to 1.
JP2000027396A 2000-01-31 2000-01-31 Package for accommodating semiconductor element Pending JP2001217331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000027396A JP2001217331A (en) 2000-01-31 2000-01-31 Package for accommodating semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000027396A JP2001217331A (en) 2000-01-31 2000-01-31 Package for accommodating semiconductor element

Publications (1)

Publication Number Publication Date
JP2001217331A true JP2001217331A (en) 2001-08-10

Family

ID=18552971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000027396A Pending JP2001217331A (en) 2000-01-31 2000-01-31 Package for accommodating semiconductor element

Country Status (1)

Country Link
JP (1) JP2001217331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010042804A (en) * 2008-07-31 2010-02-25 Ge Aviation Systems Llc Physical protection method for electrical component and apparatus used therein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010042804A (en) * 2008-07-31 2010-02-25 Ge Aviation Systems Llc Physical protection method for electrical component and apparatus used therein

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