JP2001210892A - Mounting structure of piezoelectric transformer - Google Patents

Mounting structure of piezoelectric transformer

Info

Publication number
JP2001210892A
JP2001210892A JP2000018489A JP2000018489A JP2001210892A JP 2001210892 A JP2001210892 A JP 2001210892A JP 2000018489 A JP2000018489 A JP 2000018489A JP 2000018489 A JP2000018489 A JP 2000018489A JP 2001210892 A JP2001210892 A JP 2001210892A
Authority
JP
Japan
Prior art keywords
piezoelectric transformer
lead wire
wire
piezoelectric
mounting substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000018489A
Other languages
Japanese (ja)
Inventor
Takashi Noma
隆嗣 野間
Yasuyuki Morishima
靖之 森島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2000018489A priority Critical patent/JP2001210892A/en
Publication of JP2001210892A publication Critical patent/JP2001210892A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01079—Gold [Au]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a mounting structure of a piezoelectric transformer which can prevent a lead wire connected to a piezoelectric transformer from abutting on a mounting substrate by vibrations, a generation of noise sounds created by vibrations of the lead wire, and a disconnection of the lead wire. SOLUTION: A piezoelectic transformer 14 composing a piezoelectric body substrate 16, input electrodes 18, 20 and an output electrode 22 is mounted on a mounting substrate 12. The output electrode 22 of the piezoelectric transformer 14 is connected to a connection electrode 26 of the mounting substrate 12 via a lead wire 28 so as to intersect holes 24 formed in the mounting substrate 12. The lead wire 28 connects the output electrode 22 to the connection electrode 26 so as to be bent slightly. As the lead wire 28, any one of a tinsel wire, a covered wire, and a stranded wire is used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は圧電トランスの実
装構造に関し、特にたとえば、液晶ディスプレイパネル
のバックライト用として用いられる冷陰極線管を点灯さ
せるための圧電トランスを搭載基板に実装するための圧
電トランスの実装構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of a piezoelectric transformer, and more particularly to, for example, a piezoelectric transformer for mounting a piezoelectric transformer for lighting a cold cathode ray tube used for a backlight of a liquid crystal display panel on a mounting substrate. Related to the mounting structure.

【０００２】[0002]

【従来の技術】ノート型パーソナルコンピュータなどの
液晶ディスプレイパネルのバックライト用として用いら
れる冷陰極線管を点灯させるために、小型で高効率な圧
電トランスを用いて高電圧が得られている。圧電トラン
スは、圧電素子の振動を利用した電圧変換素子であり、
入出力電極が、圧電素子の振動の節（機械的振動をして
いない部分）ではなく、機械的振動をしている部分に形
成されている場合がある。特に、出力電極は、圧電素子
の振動によって発生する電圧を出力する部分であるか
ら、圧電素子の振動する部分に形成されている場合が多
い。2. Description of the Related Art In order to light a cold cathode ray tube used for a backlight of a liquid crystal display panel such as a notebook personal computer, a high voltage is obtained by using a small and highly efficient piezoelectric transformer. A piezoelectric transformer is a voltage conversion element using the vibration of a piezoelectric element,
In some cases, the input / output electrodes are formed not at nodes of vibration of the piezoelectric element (portions not mechanically vibrating) but at portions where mechanical vibrations occur. In particular, since the output electrode is a portion that outputs a voltage generated by the vibration of the piezoelectric element, it is often formed on a portion of the piezoelectric element that vibrates.

【０００３】そのため、圧電トランスを搭載基板上に実
装する際に、圧電トランスの入出力電極と搭載基板上の
接続電極とが、フレキシブルなリード線で接続される場
合が多い。このような技術の例が、たとえば特開平１０
−２２５４４号公報に示されている。この例では、図５
および図６に示すように、フレキシブルなリード線１が
撓むようにして、圧電トランス２の出力電極３と搭載基
板４上の接続電極５とが接続されている。このように、
リード線１が撓むようにすることにより、圧電トランス
２の振動がリード線１により阻害されないようにするこ
とができる。For this reason, when mounting a piezoelectric transformer on a mounting substrate, the input / output electrodes of the piezoelectric transformer and the connection electrodes on the mounting substrate are often connected by flexible lead wires. An example of such a technique is disclosed in, for example,
No. 22544. In this example, FIG.
As shown in FIG. 6, the output electrode 3 of the piezoelectric transformer 2 and the connection electrode 5 on the mounting substrate 4 are connected such that the flexible lead wire 1 is bent. in this way,
By bending the lead wire 1, it is possible to prevent the vibration of the piezoelectric transformer 2 from being hindered by the lead wire 1.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うにリード線が撓むようにして接続する場合、リード線
取り付け作業のばらつきによっては、リード線が搭載基
板に接触する場合がある。この場合、圧電トランスの振
動がリード線に伝わり、リード線が鞭打つように搭載基
板に当り、ノイズ音が発生したり、最悪の場合リード線
が断線したりするという問題がある。また、リード線に
はフレキシブルな性質が求められるが、単芯銅線でこの
ような性質を得ようとすれば、線径を細くする必要があ
り、リード線の機械的強度が不足するという問題があ
る。However, in the case where the connection is made such that the lead wire is bent in this manner, the lead wire may come into contact with the mounting substrate depending on the variation in the work of attaching the lead wire. In this case, there is a problem that the vibration of the piezoelectric transformer is transmitted to the lead wire, and the lead wire hits the mounting board in a whip-like manner, generating a noise sound or, in the worst case, breaking the lead wire. In addition, lead wires are required to have flexible properties. However, if such properties are to be obtained with a single-core copper wire, it is necessary to reduce the wire diameter, and the mechanical strength of the lead wires is insufficient. There is.

【０００５】それゆえに、この発明の主たる目的は、圧
電トランスに接続されたリード線が振動によって搭載基
板に当たることを防止し、リード線の振動によるノイズ
音の発生を防止し、かつリード線の断線を防止すること
ができる圧電トランスの実装構造を提供することであ
る。[0005] Therefore, a main object of the present invention is to prevent a lead wire connected to a piezoelectric transformer from hitting a mounting substrate due to vibration, prevent noise noise due to vibration of the lead wire, and disconnect the lead wire. An object of the present invention is to provide a piezoelectric transformer mounting structure that can prevent the occurrence of the piezoelectric transformer.

【０００６】[0006]

【課題を解決するための手段】この発明は、搭載基板上
に圧電トランスを実装するための圧電トランスの実装構
造であって、圧電トランスに形成された電極と搭載基板
上の接続電極とがリード線で接続され、リード線近傍の
搭載基板に孔が形成されたことを特徴とする、圧電トラ
ンスの実装構造である。このような圧電トランスの実装
構造において、リード線は、金糸線、被覆線または撚線
のいずれかであることが好ましい。According to the present invention, there is provided a mounting structure of a piezoelectric transformer for mounting a piezoelectric transformer on a mounting substrate, wherein an electrode formed on the piezoelectric transformer and a connection electrode on the mounting substrate have leads. A mounting structure for a piezoelectric transformer, wherein the mounting structure is connected by wires and a hole is formed in a mounting substrate near a lead wire. In such a piezoelectric transformer mounting structure, the lead wire is preferably one of a gold wire, a covered wire, and a stranded wire.

【０００７】リード線近傍の搭載基板に孔を形成するこ
とにより、圧電トランスの振動がリード線に伝わって
も、リード線が搭載基板に当たることを防止することが
できる。また、機械的強度を有し、かつフレキシビリテ
ィを有する金糸線、被覆線、撚線などを用いることによ
り、振動によるリード線の断線を防ぐことができる。By forming a hole in the mounting substrate near the lead wire, it is possible to prevent the lead wire from hitting the mounting substrate even if the vibration of the piezoelectric transformer is transmitted to the lead wire. In addition, by using a gold wire, a covered wire, a stranded wire, or the like having mechanical strength and flexibility, breakage of the lead wire due to vibration can be prevented.

【０００８】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の発明の実施
の形態の詳細な説明から一層明らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments of the present invention with reference to the drawings.

【０００９】[0009]

【発明の実施の形態】図１はこの発明の圧電トランスの
実装構造の一例を示す平面図であり、図２はその側面図
である。この圧電トランスの実装構造１０においては、
搭載基板１２上に圧電トランス１４が実装される。圧電
トランス１４は、図３および図４に示すように、矩形板
状の圧電体基板１６を含む。圧電体基板１６の長さ方向
の一方側には、１対の入力電極１８，２０が形成され
る。これらの入力電極１８，２０は、圧電体基板１６を
挟んで対向するように形成される。さらに、圧電体基板
１６の長さ方向の他方側において、その端面に出力電極
２２が形成される。FIG. 1 is a plan view showing an example of a mounting structure of a piezoelectric transformer according to the present invention, and FIG. 2 is a side view thereof. In the mounting structure 10 of the piezoelectric transformer,
The piezoelectric transformer 14 is mounted on the mounting board 12. The piezoelectric transformer 14 includes a rectangular plate-shaped piezoelectric substrate 16 as shown in FIGS. A pair of input electrodes 18 and 20 are formed on one side of the length direction of the piezoelectric substrate 16. These input electrodes 18 and 20 are formed to face each other with the piezoelectric substrate 16 interposed therebetween. Further, an output electrode 22 is formed on the other end of the piezoelectric substrate 16 in the longitudinal direction.

【００１０】圧電体基板１６の長さ方向の一方側におい
ては、図４に矢印で示すように、１対の入力電極１８，
２０の間で圧電体基板１６の厚み方向に分極される。ま
た、圧電体基板１６の長さ方向の他方側においては、出
力電極２２に向かって圧電体基板１６の長さ方向に分極
される。On one side in the length direction of the piezoelectric substrate 16, a pair of input electrodes 18,
Polarized in the thickness direction of the piezoelectric substrate 16 between 20. On the other side of the length direction of the piezoelectric substrate 16, the polarization is made in the length direction of the piezoelectric substrate 16 toward the output electrode 22.

【００１１】この圧電トランス１４では、入力電極１
８，２０に低圧交流電力が入力される。それにより、圧
電体基板１６は、長さ方向に振動する。このとき、圧電
体基板１６の長さ方向の中央部が振動の節となり、機械
的振動が生じない部分となる。圧電体基板１６が長さ振
動することにより、出力電極２２が形成された端部は、
最も振幅の大きい振動の腹となる。このように、振動の
腹となることによって、出力電極２２が形成された圧電
体基板１６の端部に高電圧が発生し、出力電極２２と入
力電極１８との間または出力電極２２と入力電極２０と
の間に高圧交流出力が得られる。In the piezoelectric transformer 14, the input electrode 1
Low-voltage AC power is input to 8, 20. This causes the piezoelectric substrate 16 to vibrate in the length direction. At this time, the central portion in the length direction of the piezoelectric substrate 16 becomes a node of vibration, and is a portion where no mechanical vibration occurs. The end on which the output electrode 22 is formed by the length vibration of the piezoelectric substrate 16 is
It is the antinode of the vibration with the largest amplitude. As described above, the antinode of the vibration causes a high voltage to be generated at the end of the piezoelectric substrate 16 on which the output electrode 22 is formed, and between the output electrode 22 and the input electrode 18 or between the output electrode 22 and the input electrode. 20 and a high-voltage AC output is obtained.

【００１２】圧電トランス１４は、長さ方向の中央部に
おいて搭載基板１２に固定される。このとき、圧電トラ
ンス１４の振動している部分が搭載基板１２に接触しな
いように、圧電トランス１４は、固定部分以外の部分と
搭載基板１２との間に隙間をもって固定される。このよ
うに、圧電トランス１４の長さ方向の中央部で搭載基板
１２に固定することにより、圧電トランス１４の振動が
搭載基板１２に漏れることを防ぐことができる。圧電ト
ランス１４の出力電極２２の近傍において、搭載基板１
２には、たとえば略三角形の孔２４が形成される。そし
て、孔２４に隣接して、搭載基板１２上に接続電極２６
が形成される。この接続電極２６と圧電トランス１４の
出力電極２２とが、リード線２８で接続される。リード
線２８と出力電極２２との接続およびリード線２８と接
続電極２６との接続は、たとえば半田付けや導電性樹脂
により行われる。The piezoelectric transformer 14 is fixed to the mounting substrate 12 at the center in the length direction. At this time, the piezoelectric transformer 14 is fixed with a gap between a portion other than the fixed portion and the mounting substrate 12 so that the vibrating portion of the piezoelectric transformer 14 does not contact the mounting substrate 12. As described above, by fixing the piezoelectric transformer 14 to the mounting substrate 12 at the center in the length direction, the vibration of the piezoelectric transformer 14 can be prevented from leaking to the mounting substrate 12. In the vicinity of the output electrode 22 of the piezoelectric transformer 14, the mounting substrate 1
2, a substantially triangular hole 24 is formed, for example. The connection electrode 26 is formed on the mounting substrate 12 adjacent to the hole 24.
Is formed. The connection electrode 26 and the output electrode 22 of the piezoelectric transformer 14 are connected by a lead wire 28. The connection between the lead wire 28 and the output electrode 22 and the connection between the lead wire 28 and the connection electrode 26 are performed by, for example, soldering or conductive resin.

【００１３】リード線２８は、圧電トランス１４の幅方
向の一方側で出力電極２２に接続される。このとき、リ
ード線２８は、搭載基板１２に形成された接続電極２６
の反対側において、圧電トランス１４の出力電極２２に
接続される。そして、リード線２８は、搭載基板１２の
孔２４を横切るようにして、若干撓むようにして、接続
電極２６に接続される。リード線２８としては、たとえ
ば撚線や金糸線などのフレキシブルな性質を有するもの
が用いられる。撚線としては、裸撚線でもよいし、樹脂
被覆が施されたものでもよい。また、金糸線は、樹脂繊
維の周囲に平角リボン線を螺旋状に巻き付けた線材であ
り、スピーカのボイスコイルなどに用いられるものであ
る。これらのリード線は、フレキシブルであるととも
に、十分な機械的強度を有するものである。The lead wire 28 is connected to the output electrode 22 on one side of the piezoelectric transformer 14 in the width direction. At this time, the lead wire 28 is connected to the connection electrode 26 formed on the mounting substrate 12.
Is connected to the output electrode 22 of the piezoelectric transformer 14. Then, the lead wire 28 is connected to the connection electrode 26 so as to cross the hole 24 of the mounting substrate 12 and bend slightly. As the lead wire 28, for example, a wire having a flexible property such as a twisted wire or a gold wire is used. The stranded wire may be a bare stranded wire or a resin-coated wire. The gold wire is a wire material in which a rectangular ribbon wire is spirally wound around a resin fiber, and is used for a voice coil of a speaker or the like. These leads are flexible and have sufficient mechanical strength.

【００１４】このような圧電トランスの実装構造を採用
することにより、リード線２８が撓んでいるため、リー
ド線２８によって圧電トランス１６の振動が阻害されな
い。また、圧電トランス１４の振動がリード線２８に伝
わっても、搭載基板１２に孔２４が形成されていること
により、リード線２８が搭載基板１２に接触することを
防ぐことができる。そのため、リード線２８によるノイ
ズ音の発生やリード線２８の断線を防止することができ
る。また、リード線２８を撚線や金糸線とすることによ
り、大きい機械的強度を得ることができ、この点におい
てもリード線２８の断線を防止することができる。した
がって、このような圧電トランスの実装構造を採用する
ことによって、圧電トランスの信頼性を高めることがで
きる。By employing such a piezoelectric transformer mounting structure, the lead wire 28 is bent, so that the lead wire 28 does not hinder the vibration of the piezoelectric transformer 16. Further, even if the vibration of the piezoelectric transformer 14 is transmitted to the lead wires 28, since the holes 24 are formed in the mounting substrate 12, the lead wires 28 can be prevented from contacting the mounting substrate 12. For this reason, it is possible to prevent noise noise from being generated by the lead wire 28 and disconnection of the lead wire 28. In addition, by using a stranded wire or a gold wire as the lead wire 28, a large mechanical strength can be obtained, and in this regard, the disconnection of the lead wire 28 can be prevented. Therefore, by employing such a piezoelectric transformer mounting structure, the reliability of the piezoelectric transformer can be improved.

【００１５】[0015]

【発明の効果】この発明によれば、圧電トランスを搭載
基板上に実装したときに、圧電トランスの振動がリード
線に伝わることによるノイズ音の発生を抑えることがで
き、またリード線の断線を防止することができることか
ら、圧電トランスの信頼性を高めることができる。According to the present invention, when a piezoelectric transformer is mounted on a mounting board, it is possible to suppress the generation of noise sound due to the transmission of the vibration of the piezoelectric transformer to the lead wires, and to prevent the breakage of the lead wires. Since this can be prevented, the reliability of the piezoelectric transformer can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】この発明の圧電トランスの実装構造の一例を示
す平面図である。FIG. 1 is a plan view showing an example of a mounting structure of a piezoelectric transformer according to the present invention.

【図２】図１に示す圧電トランスの実装構造の側面図で
ある。FIG. 2 is a side view of a mounting structure of the piezoelectric transformer shown in FIG.

【図３】図１および図２に示す圧電トランスを示す斜視
図である。FIG. 3 is a perspective view showing the piezoelectric transformer shown in FIGS. 1 and 2;

【図４】図３に示す圧電トランスの側面図である。FIG. 4 is a side view of the piezoelectric transformer shown in FIG.

【図５】従来の圧電トランスの実装構造の例を示す平面
図である。FIG. 5 is a plan view showing an example of a mounting structure of a conventional piezoelectric transformer.

【図６】図５に示す従来の圧電トランスの実装構造の側
面図である。FIG. 6 is a side view of the mounting structure of the conventional piezoelectric transformer shown in FIG.

【符号の説明】[Explanation of symbols]

１０ 圧電トランスの実装構造 １２ 搭載基板 １４ 圧電トランス １６ 圧電体基板 １８ 入力電極 ２０ 入力電極 ２２ 出力電極 ２４ 孔 ２６ 接続電極 ２８ リード線 Reference Signs List 10 mounting structure of piezoelectric transformer 12 mounting substrate 14 piezoelectric transformer 16 piezoelectric substrate 18 input electrode 20 input electrode 22 output electrode 24 hole 26 connection electrode 28 lead wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 搭載基板上に圧電トランスを実装するた
めの圧電トランスの実装構造であって、 前記圧電トランスに形成された電極と前記搭載基板上の
接続電極とがリード線で接続され、前記リード線近傍の
前記搭載基板に孔が形成されたことを特徴とする、圧電
トランスの実装構造。1. A mounting structure of a piezoelectric transformer for mounting a piezoelectric transformer on a mounting substrate, wherein an electrode formed on the piezoelectric transformer and a connection electrode on the mounting substrate are connected by a lead wire, A mounting structure for a piezoelectric transformer, wherein a hole is formed in the mounting substrate near a lead wire. 【請求項２】 前記リード線は、金糸線、被覆線または
撚線のいずれかである、請求項１に記載の圧電トランス
の実装構造。2. The piezoelectric transformer mounting structure according to claim 1, wherein the lead wire is one of a gold wire, a covered wire, and a stranded wire.
JP2000018489A 2000-01-27 2000-01-27 Mounting structure of piezoelectric transformer Pending JP2001210892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000018489A JP2001210892A (en) 2000-01-27 2000-01-27 Mounting structure of piezoelectric transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000018489A JP2001210892A (en) 2000-01-27 2000-01-27 Mounting structure of piezoelectric transformer

Publications (1)

Publication Number Publication Date
JP2001210892A true JP2001210892A (en) 2001-08-03

Family

ID=18545333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000018489A Pending JP2001210892A (en) 2000-01-27 2000-01-27 Mounting structure of piezoelectric transformer

Country Status (1)

Country Link
JP (1) JP2001210892A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732972U (en) * 1993-11-26 1995-06-16 株式会社村田製作所 Power supply
JPH0832139A (en) * 1994-07-11 1996-02-02 Tamura Seisakusho Co Ltd Piezoelectric transformer
JPH0936454A (en) * 1995-07-20 1997-02-07 Ricoh Keiki Kk Piezoelectric ceramic transformer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732972U (en) * 1993-11-26 1995-06-16 株式会社村田製作所 Power supply
JPH0832139A (en) * 1994-07-11 1996-02-02 Tamura Seisakusho Co Ltd Piezoelectric transformer
JPH0936454A (en) * 1995-07-20 1997-02-07 Ricoh Keiki Kk Piezoelectric ceramic transformer

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