JP2001189309A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JP2001189309A JP2001189309A JP2000000290A JP2000000290A JP2001189309A JP 2001189309 A JP2001189309 A JP 2001189309A JP 2000000290 A JP2000000290 A JP 2000000290A JP 2000000290 A JP2000000290 A JP 2000000290A JP 2001189309 A JP2001189309 A JP 2001189309A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- aluminum
- less
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、各種ＩＣ（集積
回路）やセンサなどの半導体装置の製造方法に関し、特
に、これらの半導体チップ（以下、単にチップという）
の構造とチップ上を被覆する絶縁被膜の成膜方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing semiconductor devices such as various ICs (integrated circuits) and sensors, and more particularly to such semiconductor chips (hereinafter simply referred to as chips).
And a method for forming an insulating film covering the chip.
【０００２】[0002]
【従来の技術】ポリイミドに代表される液状コーティン
グ材は電気絶縁性、耐熱性に優れているために、ＩＣや
センサなどの各種半導体装置に利用されている。従来、
こうしたコーティング材は、チップ形成後、モールド樹
脂の応力緩和の目的で緩衝材として用いられ、チップの
メタル配線が形成された後、最終段階で成膜される場合
が殆どだった。しかしながら、近年、ＩＣやセンサなど
の半導体装置の高密度化に伴って、半導体装置内に集積
される素子間、配線と素子間、および配線間の絶縁膜に
は、高い絶縁性が要求される。さらに、半導体装置は、
高い温度や高い湿度あるいは汚れた環境で使用されるこ
とも多くなり、この絶縁膜には、より過酷な条件での高
い信頼性が要求される。これらの要求を満足させるため
に、高絶縁性を有し、しかも、耐環境性に優れたチップ
の構成部材としてポリイミド膜が検討されている。2. Description of the Related Art Liquid coating materials typified by polyimide have been used in various semiconductor devices such as ICs and sensors because of their excellent electrical insulation and heat resistance. Conventionally,
Such a coating material is used as a buffer material for the purpose of relaxing the stress of the mold resin after the chip is formed, and in most cases, the film is formed at the final stage after the metal wiring of the chip is formed. However, in recent years, with the increase in the density of semiconductor devices such as ICs and sensors, high insulating properties are required for insulating films between elements integrated between semiconductor devices, between wirings, and between wirings. . Further, the semiconductor device
In many cases, the insulating film is used in a high temperature, a high humidity, or a dirty environment, and the insulating film is required to have high reliability under more severe conditions. In order to satisfy these requirements, a polyimide film has been studied as a component of a chip having high insulation properties and excellent environmental resistance.
【０００３】[0003]
【発明が解決しようとする課題】ポリイミド膜は高い絶
縁性を有するため、半導体装置のチップ表面のアルミニ
ウムまたはアルミニウムに少量のシリコンや銅を混在さ
せたものからなる金属膜上にポリイミド膜が成膜され
る。半導体装置は、チップ形成工程の中間段階あるいは
最終段階でポリイミド膜を成膜した後、高温高湿の環境
や塩素やナトリウムなどのイオン成分の混じった環境に
晒される場合が多い。Since a polyimide film has a high insulating property, a polyimide film is formed on a metal film made of aluminum or a mixture of aluminum and a small amount of silicon or copper on the chip surface of a semiconductor device. Is done. A semiconductor device is often exposed to a high-temperature and high-humidity environment or an environment mixed with ionic components such as chlorine and sodium after a polyimide film is formed in an intermediate stage or a final stage of a chip forming process.
【０００４】この場合、金属膜との界面の接着性が不十
分だとポリイミド膜の表面や下地の金属膜の界面を通じ
て水分やイオン成分が侵入し、ポリイミド膜との界面に
ある金属膜を溶解し簡単に、ポリイミド膜が金属膜から
剥離してしまったり、金属膜の界面での高絶縁性が損な
われ、半導体装置を劣化させてしまう場合がある。その
ため、チップの構成部材としてポリイミド膜を使用する
ことは困難な場合が多い。[0004] In this case, if the adhesiveness at the interface with the metal film is insufficient, moisture and ionic components penetrate through the surface of the polyimide film and the interface of the underlying metal film to dissolve the metal film at the interface with the polyimide film. In some cases, the polyimide film may be easily peeled off from the metal film, or the high insulating property at the interface of the metal film may be impaired, thereby deteriorating the semiconductor device. Therefore, it is often difficult to use a polyimide film as a component of a chip.
【０００５】この発明の目的は、前記の課題を解決し
て、ポリイミド膜と金属膜との密着性を向上させ、ポリ
イミド膜をチップの構成部材として使用できる半導体装
置の製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, improve the adhesion between a polyimide film and a metal film, and provide a method of manufacturing a semiconductor device in which the polyimide film can be used as a component of a chip. is there.
【０００６】[0006]
【課題を解決するための手段】前記の目的を達成するた
めに、半導体基板上にアルミニウムもしくはアルミニウ
ムに少量のシリコンもしくは銅を混在させたものからな
る金属膜を形成し、金属膜上に電気的絶縁膜としてポリ
イミドを硬化して形成したポリイミド膜を被覆する半導
体装置の製造方法において、前記ポリイミド膜を被覆す
る前に、アルカリ水溶液とシラン系化合物もしくはフッ
化水素酸水溶液で前処理する工程を含む製造方法とす
る。In order to achieve the above object, a metal film made of aluminum or a mixture of aluminum and a small amount of silicon or copper is formed on a semiconductor substrate, and an electrical film is formed on the metal film. A method for manufacturing a semiconductor device for coating a polyimide film formed by curing polyimide as an insulating film, comprising a step of pre-treating with an aqueous alkali solution and an aqueous silane compound or hydrofluoric acid solution before coating the polyimide film. Manufacturing method.
【０００７】前記アルカリ水溶液がテトラメチルアンモ
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含むと
よい。前記シラン系化合物がヘキサメチルジシラザンお
よびヘキサエチルジシラザンの少なくともいずれかを含
むとよい。It is preferable that the alkaline aqueous solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide. It is preferable that the silane compound contains at least one of hexamethyldisilazane and hexaethyldisilazane.
【０００８】前記アルカリ水溶液がテトラメチルアンモ
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含み、
且つ、シラン系化合物がヘキサメチルジシラザンおよび
ヘキサエチルジシラザンの少なくともいずれかを含むと
よい。前記ポリイミドを酸素濃度１８％以上の空気中で
硬化させるとよい。The alkaline aqueous solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide,
In addition, the silane compound may include at least one of hexamethyldisilazane and hexaethyldisilazane. The polyimide may be cured in air having an oxygen concentration of 18% or more.
【０００９】前記アルカリ水溶液がテトラメチルアンモ
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含み、
前記テトラメチルアンモニウムハイドロオキサイドおよ
びテトラエチルアンモニウムハイドロオキサイドの少な
くともいずれかの濃度が３％以下で、前記前処理の時間
が１０分以下であるとよい。The alkaline aqueous solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide,
The concentration of at least one of the tetramethylammonium hydroxide and the tetraethylammonium hydroxide is preferably 3% or less, and the time of the pretreatment is preferably 10 minutes or less.
【００１０】前記フッ化水素酸水溶液の濃度が、５％以
下で、前記前処理の時間が１分以下であるとよい。前記
フッ化水素酸水溶液の濃度が、５％以下で、前記前処理
の時間が１分以下であり、且つ、前記ポリイミドの硬化
を酸素濃度１００ｐｐｍ以下の雰囲気で行うとよい。Preferably, the concentration of the hydrofluoric acid aqueous solution is 5% or less, and the time of the pretreatment is 1 minute or less. It is preferable that the concentration of the hydrofluoric acid aqueous solution is 5% or less, the pretreatment time is 1 minute or less, and the polyimide is cured in an atmosphere having an oxygen concentration of 100 ppm or less.
【００１１】このように、ポリイミド膜を形成する前の
前処理として、アルカリ水溶液やフッ化水素酸水溶液で
アルミニウムからなる金属膜あるいはアルミニウムを主
成分とする金属膜の表面をエッチングし、アルミニウム
膜の表面を被覆している薄い酸化膜（自然酸化膜など）
を除去し、しかも表面で、フッ化物が形成されて、水分
やイオンとの反応を抑制する。こうすることで、アルミ
ニウム膜とポリイミド膜との接着性が向上し、剥離が抑
制される。またアルミニウム膜表面の腐食が抑制され
る。さらに、高絶縁性が確保され、半導体装置の電気的
特性も損なわれない。As described above, as a pre-treatment before forming a polyimide film, the surface of a metal film made of aluminum or a metal film containing aluminum as a main component is etched with an aqueous alkali solution or a hydrofluoric acid solution to form an aluminum film. Thin oxide film covering the surface (natural oxide film etc.)
And fluoride is formed on the surface to suppress the reaction with moisture and ions. By doing so, the adhesion between the aluminum film and the polyimide film is improved, and peeling is suppressed. In addition, corrosion of the aluminum film surface is suppressed. Furthermore, high insulation properties are ensured, and the electrical characteristics of the semiconductor device are not impaired.
【００１２】[0012]
【発明の実施の形態】図１は、この発明の第１実施例の
半導体装置の製造工程を示す図であり、同図（ａ）から
同図（ｈ）は工程順に示した他の配線との接続パッド部
を形成する要部製造工程断面図である。シリコンウエハ
１にアルミニウム膜２をスパッタにより５μｍ程度の膜
厚で成膜する。このとき、アルミニウム酸化膜３でアル
ミニウム膜２の表面が覆われる（同図（ａ））。このア
ルミニウム膜２を成膜したシリコンウエハ１をテトラメ
チルアンモニウムハイドロオキサイド濃度２．５％の水
溶液に５分間浸漬し、表面のアルミニウム酸化膜３を除
去し、その後水洗乾燥する。（同図（ｂ））。尚、テト
ラメチルアンモニウムハイドロオキサイドの代わりにテ
トラエチルアンモニウムハイドロオキサイドを用いても
よい。このとき、さらに高濃度の水溶液で１０分以上浸
漬すると、アルミニウム膜２が過度にエッチングされて
好ましくない。1A to 1H are views showing a manufacturing process of a semiconductor device according to a first embodiment of the present invention. FIGS. 1A to 1H show other wirings shown in the order of steps. FIG. 7 is a cross-sectional view of a main part manufacturing step of forming the connection pad part of FIG. An aluminum film 2 is formed on a silicon wafer 1 by sputtering to a thickness of about 5 μm. At this time, the surface of the aluminum film 2 is covered with the aluminum oxide film 3 (FIG. 3A). The silicon wafer 1 on which the aluminum film 2 has been formed is immersed in an aqueous solution having a tetramethylammonium hydroxide concentration of 2.5% for 5 minutes to remove the aluminum oxide film 3 on the surface, and then washed and dried. (FIG. 2B). Note that tetraethylammonium hydroxide may be used instead of tetramethylammonium hydroxide. At this time, if the aluminum film 2 is immersed in an aqueous solution having a higher concentration for 10 minutes or more, the aluminum film 2 is excessively etched, which is not preferable.
【００１３】その後、窒素ガスでバブリングして気化さ
せたヘキサメチルジシラザンに２分間暴露する。このと
き、ヘキサメチルジシラザンを含む膜４がアルミニウム
膜２の表面を被覆する（同図（ｃ））。尚、ヘキサメチ
ルジシラザンを含む膜の代わりにヘキサエチルジシラザ
ンを含む膜、または、これらの両方を含む膜を用いても
よい。After that, it is exposed to hexamethyldisilazane vaporized by bubbling with nitrogen gas for 2 minutes. At this time, the film 4 containing hexamethyldisilazane covers the surface of the aluminum film 2 (FIG. 3C). Note that a film containing hexaethyldisilazane or a film containing both of them may be used instead of the film containing hexamethyldisilazane.
【００１４】つぎに、スピンコーター（回転塗布器）
で、表面がヘキサメチルジシラザンを含む膜４で被覆さ
れたたアルミニウム膜２が成膜されたシリコンウエハ１
を１２００回転／分で１５秒回転させ、ポリイミド（例
えば、ＨＤマイクロシステムズ株式会社製ＰＩＸ１４０
０）を塗布する。その後、ホットプレート（熱板）上
で、１１０℃程度で５分程度加熱し、溶剤を飛ばして、
キュアし、膜厚６μｍ程度のポリイミド膜５をアルミニ
ウム膜２が成膜されたシリコンウエハ１に被覆する（同
図（ｄ））。Next, a spin coater (rotary applicator)
A silicon wafer 1 on which an aluminum film 2 whose surface is covered with a film 4 containing hexamethyldisilazane is formed.
Is rotated at 1200 rpm for 15 seconds, and polyimide (for example, PIX140 manufactured by HD Microsystems Co., Ltd.) is used.
0) is applied. Then, it is heated on a hot plate (hot plate) at about 110 ° C. for about 5 minutes to remove the solvent,
After curing, the silicon wafer 1 on which the aluminum film 2 has been formed is coated with the polyimide film 5 having a thickness of about 6 μm (FIG. 4D).
【００１５】このポリイミド膜５を成膜したシリコンウ
エハ１をスピンコーターで１２００回転／分で１５秒回
転させ、レジスト（例えば、クラリアントジャパン製Ａ
Ｚ６１２４）を塗布する。その後、ホットプレート上
で、９０℃程度で９０秒程度加熱し、溶剤を飛ばして、
キュアし、膜厚３μｍ程度のレジスト膜６をポリイミド
膜５が成膜されたシリコンウエハ１上に被覆する（同図
（ｅ））。これにマスクアライナーを用いて、レジスト
６に２００ｍＪ／ｃｍ2 の紫外線８（ｇ線またはｉ線）
を同図（ｆ）で使用したフォトマスク７を介して照射す
る（同図（ｆ））。尚、５ａは非感光部で、５ｂは感光
部である。The silicon wafer 1 on which the polyimide film 5 is formed is rotated by a spin coater at 1200 rpm for 15 seconds, and a resist (for example, A manufactured by Clariant Japan) is used.
Z6124). After that, on a hot plate, heat at about 90 ° C for about 90 seconds to remove the solvent,
After curing, the resist film 6 having a thickness of about 3 μm is coated on the silicon wafer 1 on which the polyimide film 5 is formed (FIG. 4E). Using a mask aligner, the resist 6 was irradiated with ultraviolet rays 8 (g-line or i-line) of 200 mJ / cm 2.
Is irradiated through the photomask 7 used in FIG. 1F (FIG. 1F). In addition, 5a is a non-photosensitive portion and 5b is a photosensitive portion.
【００１６】ポリイミド膜５が被覆しているシリコンウ
エハ１を現像液（例えば、クラリアントジャパン製ＡＺ
６００ＭＩＦ）で２５℃で５分間浸漬して、感光部５ｂ
のレジスト６とポリイミド５を同時に現像し、水洗す
る。これで、ポリイミド膜５がパターニングされる（同
図（ｇ））。その後、シリコンウエハ１をアセトン溶剤
中に２分間浸漬し、レジスト６を除去した後、水洗乾燥
させる。その後、シリコンウエハ１を酸素濃度１８％以
上の空気中で乾燥炉に入れて、３５０℃で１時間程度加
熱する（同図（ｈ））。これによりパッド部１０が形成
される。The silicon wafer 1 covered with the polyimide film 5 is developed with a developing solution (for example, AZ manufactured by Clariant Japan).
600MIF) for 5 minutes at 25 ° C.
The resist 6 and the polyimide 5 are simultaneously developed and washed with water. Thus, the polyimide film 5 is patterned (FIG. 2G). Thereafter, the silicon wafer 1 is immersed in an acetone solvent for 2 minutes to remove the resist 6, and then washed and dried. Thereafter, the silicon wafer 1 is placed in a drying furnace in an air having an oxygen concentration of 18% or more, and heated at 350 ° C. for about 1 hour (FIG. 1H). Thereby, the pad section 10 is formed.
【００１７】同図（ｄ）の工程に示したように、ポリイ
ミド膜５とアルミニウム膜２との間にヘキサメチルジシ
ラザンを含む膜４を介在させることで、アルミニウム膜
２と水分とが直接反応することを阻害するとともに、ポ
リイミド膜５とヘキサメチルジシラザンを含む膜４との
密着性が向上し、剥離を抑制でき、腐食発生を抑制でき
る。尚、テトラメチルアンモニウムハイドロオキサイド
の効果を発揮し、且つ、アルミニウムが過度にエッチン
グされないためには、２から２．５％の濃度で、３分か
ら１０分の範囲で行うのが好ましい。By interposing a film 4 containing hexamethyldisilazane between the polyimide film 5 and the aluminum film 2 as shown in the step of FIG. In addition, the adhesion between the polyimide film 5 and the film 4 containing hexamethyldisilazane is improved, peeling can be suppressed, and corrosion can be suppressed. In order to exhibit the effect of tetramethylammonium hydroxide and prevent aluminum from being excessively etched, it is preferable to perform the treatment at a concentration of 2 to 2.5% at a concentration of 3 to 10 minutes.
【００１８】図２は、この発明の第２実施例の半導体装
置の製造工程を示す図であり、同図（ａ）から同図
（ｇ）は工程順に示した要部製造工程断面図である。シ
リコンウエハ１１にアルミニウム膜１２をスパッタによ
り５μｍ程度の膜厚で成膜する。このとき、アルミニウ
ム酸化膜１３でアルミニウム膜２の表面が覆われる（同
図（ａ））。このアルミニウム膜１２を成膜したシリコ
ンウエハ１１をフッ化水素酸濃度２％の水溶液に３０秒
間浸漬し、表面のアルミニウム酸化膜１３を除去し、そ
の後水洗乾燥する。このとき、フッ化物１９がアルミニ
ウム膜１２の表面に残留する（同図（ｂ））。このと
き、さらに高濃度の水溶液で長時間処理すると、アルミ
ニウム膜１２が過度にエッチングされて好ましくない。FIGS. 2A to 2G are cross-sectional views showing a manufacturing process of a semiconductor device according to a second embodiment of the present invention. FIGS. . An aluminum film 12 is formed on a silicon wafer 11 by sputtering to a thickness of about 5 μm. At this time, the surface of the aluminum film 2 is covered with the aluminum oxide film 13 (FIG. 7A). The silicon wafer 11 on which the aluminum film 12 is formed is immersed in an aqueous solution having a hydrofluoric acid concentration of 2% for 30 seconds to remove the aluminum oxide film 13 on the surface, and then washed and dried. At this time, the fluoride 19 remains on the surface of the aluminum film 12 (FIG. 2B). At this time, if the treatment is performed for a long time with a higher concentration aqueous solution, the aluminum film 12 is excessively etched, which is not preferable.
【００１９】その後、スピンコーターで、フッ化物１９
で被覆された、アルミニウム膜１２が成膜されたシリコ
ンウエハ１１を１２００回転／分で１５秒回転させ、ポ
リイミド（例えば、ＨＤマイクロシステムズ株式会社製
ＰＩＸ１４００）を塗布する。その後、ホットプレート
上で、１１０℃程度で５分程度過熱し、溶剤を飛ばし
て、キュアし、膜厚６μｍ程度のポリイミド膜１５をア
ルミニウム膜１２が成膜されたシリコンウエハ１１上に
被膜する（同図（ｃ））。Thereafter, fluoride 19 is applied by a spin coater.
The silicon wafer 11 coated with the aluminum film 12 and having the aluminum film 12 formed thereon is rotated at 1200 rpm for 15 seconds to apply polyimide (for example, PIX1400 manufactured by HD Microsystems Co., Ltd.). Thereafter, the mixture is heated on a hot plate at about 110 ° C. for about 5 minutes to remove the solvent and cure, and a polyimide film 15 having a thickness of about 6 μm is coated on the silicon wafer 11 on which the aluminum film 12 is formed ( FIG.
【００２０】このポリイミド膜１５が被覆された、アル
ミニウム膜１２が成膜されたシリコンウエハ１１をスピ
ンコーターで１２００回転／分で１５秒回転させ、レジ
スト１６（例えば、クラリアントジャパン製ＡＺ６１２
４）を塗布する。その後、ホットプレート上で、９０℃
程度で９０秒程度加熱し、溶剤を飛ばして、キュアし、
膜厚３μｍ程度のレジスト膜１６をポリイミド膜１５で
成膜されたシリコンウエハ１１上に被覆する（同図
（ｄ））。これにマスクアライナーを用いて、レジスト
６に２００ｍＪ／ｃｍ2 の紫外線１８（ｇ線またはｉ
線）を同図（ｅ）で使用したフォトマスク１７を介して
照射する（同図（ｅ））。尚、１５ａは非感光部で、１
５ｂは感光部である。The silicon wafer 11 on which the polyimide film 15 is coated and on which the aluminum film 12 is formed is rotated by a spin coater at 1200 rpm for 15 seconds to form a resist 16 (for example, AZ612 manufactured by Clariant Japan).
4) is applied. Then, on a hot plate, 90 ° C
About 90 seconds, remove solvent, cure,
A resist film 16 having a thickness of about 3 μm is coated on the silicon wafer 11 formed with the polyimide film 15 (FIG. 4D). Using a mask aligner, the resist 6 was exposed to ultraviolet rays 18 (g-ray or i-ray) of 200 mJ / cm 2.
(E) is irradiated through the photomask 17 used in FIG. (E) (FIG. (E)). In addition, 15a is a non-photosensitive portion and 1
5b is a photosensitive section.
【００２１】ポリイミド膜１５が被覆している、アルミ
ニウム膜１２が成膜されたシリコンウエハ１１を現像液
（例えば、クラリアントジャパン製ＡＺ６００ＭＩＦ）
で２５℃で５分間浸漬して、感光部１５ｂのレジスト１
６とポリイミド膜１５を同時に現像し、水洗する。これ
で、ポリイミド膜１５がパターニングされる（同図
（ｆ））。その後、シリコンウエハ１１をアセトン溶剤
中に２分間浸漬し、レジスト１６を除去した後、水洗乾
燥させる。その後、シリコンウエハ１１を酸素濃度１０
０ｐｐｍ以下の雰囲気で乾燥炉に入れて、３５０℃で１
時間程度加熱する（同図（ｇ））。これにより、パッド
部２０が形成される。The silicon wafer 11 on which the aluminum film 12 is covered with the polyimide film 15 is developed with a developing solution (for example, AZ600MIF manufactured by Clariant Japan).
For 5 minutes at 25 ° C.
6 and the polyimide film 15 are simultaneously developed and washed with water. Thus, the polyimide film 15 is patterned (FIG. 6F). Thereafter, the silicon wafer 11 is immersed in an acetone solvent for 2 minutes to remove the resist 16, and then washed and dried. Thereafter, the silicon wafer 11 is set to an oxygen concentration of 10
Put in a drying oven in an atmosphere of 0 ppm or less, and
Heat for about an hour ((g) in the figure). Thereby, the pad section 20 is formed.
【００２２】同図（ｃ）の工程に示したように、ポリイ
ミド膜１５とアルミニウム膜１２との間にフッ化物１９
を介在させることで、アルミニウム膜１２と水分とが直
接反応することを阻害でき、腐食発生を抑制できる。
尚、フッ化水素酸の効果を発揮し、且つ、アルミニウム
膜１２が過度にエッチングされないためには、１から
２．５％の濃度で、１０秒から３０秒の範囲で行うのが
好ましい。尚、第１実施例および第２実施例のアルミニ
ウム膜２、１２は少量のシリコンまたは銅が混在するア
ルミニウム膜の場合にも、本発明は適用できる。As shown in FIG. 2C, a fluoride 19 is interposed between the polyimide film 15 and the aluminum film 12.
By intervening, the direct reaction between the aluminum film 12 and moisture can be inhibited, and the occurrence of corrosion can be suppressed.
In order to exhibit the effect of hydrofluoric acid and prevent the aluminum film 12 from being excessively etched, it is preferable to perform the treatment at a concentration of 1 to 2.5% for a period of 10 seconds to 30 seconds. The present invention can be applied to the case where the aluminum films 2 and 12 of the first and second embodiments are aluminum films containing a small amount of silicon or copper.
【００２３】[0023]
【発明の効果】この発明によれば、アルミニウム膜もし
くは少量のシリコンまたは銅が混在するアルミニウム膜
の表面をテトラメチルアンモニウムハイドロオキサイド
およびテトラエチルアンモニウムハイドロオキサイドの
少なくともいずれかを含む水溶液でアルカリ処理すると
腐食しやすい酸化膜を除去でき、腐食の発生を抑制する
ことができ、且つ、アルミニウム膜とポリイミド膜の密
着性を向上させることができる。According to the present invention, the surface of an aluminum film or an aluminum film containing a small amount of silicon or copper is corroded when treated with an aqueous solution containing at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide. An easily oxidized film can be removed, the occurrence of corrosion can be suppressed, and the adhesion between the aluminum film and the polyimide film can be improved.
【００２４】さらに、ヘキサメチルジシラザンで処理す
ることで、水分とアルミニウム膜との直接の接触を防止
でき、腐食発生を抑制することができる。これを空気中
で硬化することで、アルミニウム膜とポリイミド膜との
相互作用が強くなり、密着性が向上し、腐食の発生を抑
制するこができる。また、アルミニウム膜の表面をフッ
化水素酸などの酸処理をすることで、アルミニウム膜表
面にフッ化物を形成することができ、水分とアルミニウ
ム膜との直接の接触を防止でき、腐食発生を抑制するこ
とができる。Further, by treating with hexamethyldisilazane, direct contact between water and the aluminum film can be prevented, and the occurrence of corrosion can be suppressed. By curing this in air, the interaction between the aluminum film and the polyimide film becomes stronger, the adhesion is improved, and the occurrence of corrosion can be suppressed. In addition, by treating the surface of the aluminum film with an acid such as hydrofluoric acid, a fluoride can be formed on the surface of the aluminum film, thereby preventing direct contact between moisture and the aluminum film and suppressing the occurrence of corrosion. can do.
【００２５】さらに、酸素濃度１００ｐｐｍ以下の雰囲
気で硬化させると、フッ化物が酸化膜されることなく保
持され、アルミニウム膜の水分との直接の接触を抑制
し、腐食を抑制できる。こうすることで、ポリイミド膜
をチップの構成部材として利用できる。Further, when the curing is performed in an atmosphere having an oxygen concentration of 100 ppm or less, the fluoride is retained without being formed as an oxide film, and the direct contact of the aluminum film with moisture can be suppressed, thereby suppressing the corrosion. In this way, the polyimide film can be used as a component of the chip.
【図１】この発明の第１実施例の半導体装置の製造方法
で、（ａ）から（ｈ）は工程順に示した要部製造工程断
面図FIGS. 1A to 1H are cross-sectional views of a main part manufacturing process shown in a process order in a method of manufacturing a semiconductor device according to a first embodiment of the present invention;
【図２】この発明の第２実施例の半導体装置の製造方法
で、（ａ）から（ｇ）は工程順に示した要部製造工程断
面図FIGS. 2A to 2G are cross-sectional views of a main part manufacturing step in a method of manufacturing a semiconductor device according to a second embodiment of the present invention shown in the order of steps; FIGS.
１、１１ シリコンウエハ ２、１２ アルミニウム膜 ３、１３ アルミニウム酸化膜 ４、 ヘキサメチルジシラザンを含む膜 ５、１５ ポリイミド膜 ５ａ、１５ａ 非感光部 ５ｂ、１５ｂ 感光部 ６、１６ レジスト ７、１７ フォトレジスト ８、１８ 紫外線 １０、２０ パッド部 １９ フッ化物 DESCRIPTION OF SYMBOLS 1, 11 Silicon wafer 2, 12 Aluminum film 3, 13 Aluminum oxide film 4, Film containing hexamethyldisilazane 5, 15 Polyimide film 5a, 15a Non-photosensitive portion 5b, 15b Photosensitive portion 6, 16 Resist 7, 17 Photo resist 8, 18 Ultraviolet light 10, 20 Pad part 19 Fluoride
Claims (8)
ミニウムに少量のシリコンもしくは銅を混在させたもの
からなる金属膜を形成し、該金属膜上に電気的絶縁膜と
してポリイミドを硬化して形成したポリイミド膜を被覆
する半導体装置の製造方法において、前記ポリイミド膜
を被覆する前に、アルカリ水溶液とシラン系化合物もし
くはフッ化水素酸水溶液で前処理する工程を含むことを
特徴とする半導体装置の製造方法。1. A polyimide film formed by forming a metal film made of aluminum or a mixture of aluminum and a small amount of silicon or copper on a semiconductor substrate, and curing the polyimide as an electrical insulating film on the metal film. A method of manufacturing a semiconductor device, comprising a step of pre-treating with an aqueous alkali solution and an aqueous silane compound or hydrofluoric acid solution before coating the polyimide film.
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含むこ
とを特徴とする請求項１に記載の半導体装置の製造方
法。2. The method according to claim 1, wherein the aqueous alkaline solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide.
ザンおよびヘキサエチルジシラザンの少なくともいずれ
かを含むことを特徴とする請求項１に記載の半導体装置
の製造方法。3. The method according to claim 1, wherein the silane compound contains at least one of hexamethyldisilazane and hexaethyldisilazane.
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含み、
且つ、シラン系化合物がヘキサメチルジシラザンおよび
ヘキサエチルジシラザンの少なくともいずれかを含むこ
とを特徴とする請求項１に記載の半導体装置の製造方
法。4. The alkaline aqueous solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide,
2. The method according to claim 1, wherein the silane-based compound contains at least one of hexamethyldisilazane and hexaethyldisilazane.
気中で硬化させることを特徴とする請求項１に記載の半
導体装置の製造方法。5. The method according to claim 1, wherein the polyimide is cured in air having an oxygen concentration of 18% or more.
ニウムハイドロオキサイドおよびテトラエチルアンモニ
ウムハイドロオキサイドの少なくともいずれかを含み、
前記テトラメチルアンモニウムハイドロオキサイドおよ
びテトラエチルアンモニウムハイドロオキサイドの少な
くともいずれかの濃度が３％以下で、前記前処理の時間
が１０分以下であることを特徴とする請求項１に記載の
半導体装置の製造方法。6. The alkaline aqueous solution contains at least one of tetramethylammonium hydroxide and tetraethylammonium hydroxide,
2. The method according to claim 1, wherein the concentration of at least one of the tetramethylammonium hydroxide and the tetraethylammonium hydroxide is 3% or less, and the time of the pretreatment is 10 minutes or less. .
下で、前記前処理の時間が１分以下であることを特徴と
する請求項１に記載の半導体装置の製造方法。7. The method according to claim 1, wherein the concentration of the hydrofluoric acid aqueous solution is 5% or less, and the time of the pretreatment is 1 minute or less.
下で、前記前処理の時間が１分以下であり、且つ、前記
ポリイミドの硬化を酸素濃度１００ｐｐｍ以下の雰囲気
で行うことを特徴とする請求項１に記載の半導体装置の
製造方法。8. The method according to claim 1, wherein the concentration of the aqueous solution of hydrofluoric acid is 5% or less, the time of the pretreatment is 1 minute or less, and the polyimide is cured in an atmosphere having an oxygen concentration of 100 ppm or less. The method of manufacturing a semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000000290A JP4193314B2 (en) | 2000-01-05 | 2000-01-05 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000000290A JP4193314B2 (en) | 2000-01-05 | 2000-01-05 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001189309A true JP2001189309A (en) | 2001-07-10 |
| JP4193314B2 JP4193314B2 (en) | 2008-12-10 |
Family
ID=18529660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000000290A Expired - Lifetime JP4193314B2 (en) | 2000-01-05 | 2000-01-05 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4193314B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1670298A1 (en) * | 2004-12-07 | 2006-06-14 | Samsung SDI Germany GmbH | Substrate for a display and method for manufacturing the same |
| JP2017208355A (en) * | 2012-06-05 | 2017-11-24 | モックステック・インコーポレーテッド | Amorphous carbon and aluminum x-ray window |
| US11424203B2 (en) | 2019-05-13 | 2022-08-23 | Fuji Electric Co., Ltd. | Semiconductor module and method of manufacturing semiconductor module |
-
2000
- 2000-01-05 JP JP2000000290A patent/JP4193314B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1670298A1 (en) * | 2004-12-07 | 2006-06-14 | Samsung SDI Germany GmbH | Substrate for a display and method for manufacturing the same |
| JP2017208355A (en) * | 2012-06-05 | 2017-11-24 | モックステック・インコーポレーテッド | Amorphous carbon and aluminum x-ray window |
| US11424203B2 (en) | 2019-05-13 | 2022-08-23 | Fuji Electric Co., Ltd. | Semiconductor module and method of manufacturing semiconductor module |
| US11824024B2 (en) | 2019-05-13 | 2023-11-21 | Fuji Electric Co., Ltd. | Semiconductor module and method of manufacturing semiconductor module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4193314B2 (en) | 2008-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4152195A (en) | Method of improving the adherence of metallic conductive lines on polyimide layers | |
| US5503961A (en) | Process for forming multilayer lift-off structures | |
| JP4193314B2 (en) | Manufacturing method of semiconductor device | |
| JP2002270735A (en) | Semiconductor device and its manufacturing method | |
| CN115223849A (en) | Semiconductor device and manufacturing method thereof | |
| JP3630222B2 (en) | Semiconductor device and manufacturing method thereof | |
| US20010036721A1 (en) | Process for metallizing at least one insulating layer of a component | |
| JPH09306901A (en) | Manufacture of semiconductor device | |
| JP3726578B2 (en) | Manufacturing method of semiconductor device | |
| JPH06275511A (en) | Forming method of polyimide pattern | |
| JP2901211B2 (en) | Method for manufacturing semiconductor device | |
| TW501225B (en) | Element with at least two adjacent isolation-layers and its production method | |
| JPH0917777A (en) | Manufacture of semiconductor device | |
| JP2004063729A (en) | Electrode structure and its forming method | |
| JPH058856B2 (en) | ||
| JPS60247947A (en) | Manufacture of semiconductor device | |
| JPH0466950A (en) | Method for selectively treating surface of polyimide | |
| KR100265341B1 (en) | Method of fabricating semiconductor device | |
| JP2003013246A (en) | Method for manufacturing electrode of semiconductor device | |
| JPH0414224A (en) | Manufacture of semiconductor device | |
| JPS6329951A (en) | Forming method for fine wiring pattern | |
| JPH10144674A (en) | Polyimide film for electronic device | |
| JPH06101464B2 (en) | Method for manufacturing semiconductor device | |
| JPH0443641A (en) | Manufacture of semiconductor element | |
| KR0175332B1 (en) | D.I method for preventing pattern fixing failure using water |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060117 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060703 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060704 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080422 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080520 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080722 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080902 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080915 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4193314 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111003 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111003 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111003 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111003 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111003 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121003 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131003 Year of fee payment: 5 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |