JP2001185763A - Optical semiconductor package - Google Patents

Optical semiconductor package

Info

Publication number
JP2001185763A
JP2001185763A JP36937499A JP36937499A JP2001185763A JP 2001185763 A JP2001185763 A JP 2001185763A JP 36937499 A JP36937499 A JP 36937499A JP 36937499 A JP36937499 A JP 36937499A JP 2001185763 A JP2001185763 A JP 2001185763A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
resin molded
molded body
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP36937499A
Other languages
Japanese (ja)
Other versions
JP3964590B2 (en
Inventor
Tsukasa Uchihara
原 士 内
Hideo Tamura
村 英 男 田
Masayuki Sugizaki
崎 雅 之 杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP36937499A priority Critical patent/JP3964590B2/en
Publication of JP2001185763A publication Critical patent/JP2001185763A/en
Application granted granted Critical
Publication of JP3964590B2 publication Critical patent/JP3964590B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor package of a lead frame type which realizes low thermal resistance. SOLUTION: This optical semiconductor package 1 is provided with a lead frame 13, a translucent member 16 and a light shielding resin molded member 14. The lead frame 13 consists of a metal segment 11 which mounts an optical semiconductor element 22 on a mounting region of a main surface and is electrically connected with the optical semiconductor element 22 through conductive adhesive agent 24, and a metal segment 12 electrically connected with the optical semiconductor element 22 through a metal wire 26. The light transmitting member 16 is formed of translucent resin and arranged so as to cover the optical semiconductor element 22. The light shielding resin molded member 14 is formed of light shielding resin, and has a bottom part retaining an inner lead part of the lead frame 13 and a side part retaining the translucent member 16. In the metal segment 12, a back region corresponding to the mounting region mounting the optical semiconductor element 22 is exposed outside penetrating a bottom part of the light shielding resin molded member 14 and made a first heat dissipating region.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、光半導体パッケー
ジに関し、特に、低熱抵抗を実現する光半導体パッケー
ジの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor package, and more particularly, to a structure of an optical semiconductor package realizing low thermal resistance.

【０００２】[0002]

【従来の技術】従来の技術による光半導体パッケージに
ついて図面を参照しながら説明する。2. Description of the Related Art A conventional optical semiconductor package will be described with reference to the drawings.

【０００３】図３（ａ）は、従来の光半導体パッケージ
の一例を示す正面図であり、また、同図（ｂ）は、
（ａ）における破線内の領域の拡大図である。FIG. 3A is a front view showing an example of a conventional optical semiconductor package, and FIG.
It is an enlarged view of the area in the broken line in (a).

【０００４】同図に示す光半導体パッケージ５０は、２
つの金属片５１，５２でなるリードフレーム５３と、導
電性接着剤５４を介してリードフレーム５３上に固着さ
れた光半導体素子２２と、樹脂封止体５６とを備える。The optical semiconductor package 50 shown in FIG.
A lead frame 53 composed of two metal pieces 51 and 52, an optical semiconductor element 22 fixed on the lead frame 53 via a conductive adhesive 54, and a resin sealing body 56 are provided.

【０００５】光半導体素子２２は、図３（ｂ）に示すよ
うに、カソードが導電性接着剤５４によりリードフレー
ムの金属片５１に電気的に接続され、また、アノードが
金属ワイヤ２６を介してリードフレーム５３の金属片５
２に電気的に接続されている。As shown in FIG. 3B, the cathode of the optical semiconductor element 22 is electrically connected to the metal piece 51 of the lead frame by the conductive adhesive 54, and the anode is connected to the metal wire 26 via the metal wire 26. Metal piece 5 of lead frame 53
2 are electrically connected.

【０００６】図３に示すような従来の光半導体パッケー
ジにおいて、通電により入力電流に比例して光半導体素
子２２が発熱する。発生した熱は、導電性接着剤５４に
伝導した後リードフレーム５３に伝導し、その後外気に
放出される。熱の一部は、封止樹脂５６を経由して外気
に放出されるが、リードフレーム５３は、一般に熱伝導
性が非常に良好な金属で形成されるため、大部分の熱
は、リードフレーム５３を通じて放出される。In the conventional optical semiconductor package as shown in FIG. 3, the energization causes the optical semiconductor element 22 to generate heat in proportion to the input current. The generated heat is conducted to the conductive adhesive 54, then to the lead frame 53, and then released to the outside air. Although a part of the heat is released to the outside air via the sealing resin 56, the lead frame 53 is generally formed of a metal having a very good thermal conductivity. Released through 53.

【０００７】光半導体素子の特性は、熱による温度上昇
で劣化し、この結果、光の取出し効率が低下する。従
来、放熱性を向上させ、パッケージの熱抵抗を低減して
このような問題に対処するため、リードフレームタイプ
のパッケージについては、以下の方法が採用されてき
た。[0007] The characteristics of the optical semiconductor element are degraded by the temperature rise due to heat, and as a result, the light extraction efficiency is reduced. Conventionally, the following method has been employed for a lead frame type package in order to address such a problem by improving heat dissipation and reducing the thermal resistance of the package.

【０００８】即ち、第１の方法としてリードフレームの
幅を太くする方法や、第２の方法として導電性接着剤に
ついて熱伝導性が良好なものを選択する方法、第３の方
法としてパッケージ全体の容量を増加させる方法、など
が用いられた。That is, a first method is to increase the width of the lead frame, a second method is to select a conductive adhesive having good thermal conductivity, and a third method is to select the whole package. A method of increasing the capacity was used.

【０００９】また、リードフレームタイプではなく、パ
ッケージの熱抵抗が低いステムタイプなどを用いる場合
もあった。In some cases, instead of the lead frame type, a stem type having a low thermal resistance of the package is used.

【００１０】[0010]

【発明が解決しようとする課題】しかしながら、半導体
素子は、一般的に、より一層の軽薄短小化が求められて
いる。この一方、上述した第１および第３の方法によれ
ば、パッケージの容積が大きくなってしまう。第２の方
法によれば、パッケージの容積に影響を与えることはな
いが、大幅な効果は期待できない。また、ステムタイプ
のパッケージでは、部品の単価が高いことに加え、多数
の部品を組立てなければならないため、大量生産には不
向きである。However, semiconductor devices are generally required to be further reduced in weight and size. On the other hand, according to the first and third methods described above, the volume of the package increases. According to the second method, the volume of the package is not affected, but a significant effect cannot be expected. In addition, stem-type packages are not suitable for mass production because the unit cost of parts is high and many parts must be assembled.

【００１１】本発明は上記事情に鑑みてなされたもので
あり、その目的は、低熱抵抗を実現するリードフレーム
タイプの光半導体パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a lead frame type optical semiconductor package realizing low thermal resistance.

【００１２】[0012]

【課題を解決するための手段】本発明は、以下の手段に
より上記課題の解決を図る。The present invention solves the above-mentioned problems by the following means.

【００１３】即ち、本発明によれば、光半導体素子と、
金属により形成されこの光半導体素子を主面に実装する
リードフレームと、透光性樹脂により形成され上記光半
導体素子を覆うように配設される第１の樹脂成型体と、
遮光性樹脂により形成され上記リードフレームのインナ
ーリード部を支持する底部と上記第１の樹脂成型体を支
持する側部とを有する第２の樹脂成型体と、を備え、上
記リードフレームは、上記主面に対向する裏面のうち上
記光半導体素子の実装領域に対応する領域が上記第２の
樹脂成型体の底部を貫通して外部に露出するように形成
されて第１の放熱領域をなし、アウタリード部が第２の
放熱領域をなす光半導体パッケージが提供される。That is, according to the present invention, there is provided an optical semiconductor device,
A lead frame formed of metal and mounting the optical semiconductor element on the main surface, a first resin molded body formed of a translucent resin and disposed to cover the optical semiconductor element;
A second resin molded body having a bottom portion formed of a light-shielding resin and supporting an inner lead portion of the lead frame, and a side portion supporting the first resin molded body; A region corresponding to the mounting region of the optical semiconductor element on the back surface facing the main surface is formed so as to be exposed to the outside through the bottom of the second resin molded body to form a first heat radiation region, An optical semiconductor package in which an outer lead portion forms a second heat dissipation area is provided.

【００１４】上記リードフレームの裏面のうち、光半導
体素子の実装領域に対応する領域が上記第２の樹脂成型
体の底部を貫通して外部に露出する第１の放熱領域をな
すので、上記リードフレームのアウタリード部と上記第
１の樹脂成型体の表面領域に加え、光半導体素子で発生
した熱を熱源に最も近い領域から外部に放出することが
できる。これにより、熱抵抗が大幅に低い光半導体パッ
ケージが提供される。The area corresponding to the mounting area of the optical semiconductor element on the back surface of the lead frame forms a first heat radiation area which is exposed to the outside through the bottom of the second resin molded body. In addition to the outer lead portion of the frame and the surface region of the first resin molded body, heat generated by the optical semiconductor element can be released to the outside from a region closest to the heat source. Thereby, an optical semiconductor package having a significantly low thermal resistance is provided.

【００１５】また、上記第１の樹脂成型体と上記第２の
樹脂成型体は、ともに樹脂により形成されるので、相互
の固着面は、優れた密着性を有する。これにより、外部
からの水分や不純物の進入を確実に防止することができ
る。[0015] Further, since the first resin molded body and the second resin molded body are both formed of resin, the mutually fixed surfaces have excellent adhesion. Thus, entry of moisture and impurities from the outside can be reliably prevented.

【００１６】上記リードフレームは、上記光半導体素子
を搭載するとともにこの光半導体素子の第１の端子と接
続された第１の金属部と、上記光半導体素子の第２の端
子と金属ワイヤにより接続された第２の金属部と、を有
し、上記第１の金属部は、上記実装領域から互いに異な
る方向で外部へ延在するように形成され、そのアウタリ
ード部が複数の上記第２の放熱領域をなすと良い。The lead frame mounts the optical semiconductor element and is connected to a first metal part connected to a first terminal of the optical semiconductor element and a second terminal of the optical semiconductor element by a metal wire. A second metal part, the first metal part is formed so as to extend to the outside from the mounting region in directions different from each other, and the outer lead part has a plurality of the second heat radiating parts. It is good to make an area.

【００１７】上記第１の金属片のアウタリード部が複数
の上記第２の放熱領域をなすので、上記第２の放熱領域
の表面積が大きくなる。この結果、上記実装領域で発生
しインナーリード部を介して伝導する熱が効率良く外部
へ放出される。これにより、熱抵抗がさらに低減するこ
とができる。Since the outer lead portion of the first metal piece forms a plurality of the second heat dissipation areas, the surface area of the second heat dissipation area is increased. As a result, heat generated in the mounting area and conducted through the inner lead portion is efficiently released to the outside. Thereby, the thermal resistance can be further reduced.

【００１８】また、上記第１の金属部は、主面に上記光
半導体素子を搭載し底面が上記第１の樹脂成型体の底面
から突出するように配設される金属ブロックを含むもの
でも良い。The first metal portion may include a metal block having the main surface on which the optical semiconductor element is mounted and a bottom surface protruding from the bottom surface of the first resin molded body. .

【００１９】上記金属ブロックの底面が上記第１の樹脂
成型体の底面から突出するので、光半導体素子で発生し
た熱をさらに効率よく放出できるとともに、パッケージ
を基板に実装した場合に、上記金属ブロックの底面以外
の領域と基板との間に間隙が形成される。これにより、
この間隙内の空間を介して熱がさらに高効率で放出され
る。Since the bottom surface of the metal block protrudes from the bottom surface of the first resin molded body, the heat generated in the optical semiconductor element can be more efficiently radiated. A gap is formed between the substrate and a region other than the bottom surface. This allows
Heat is released with higher efficiency through the space in the gap.

【００２０】上記第１の樹脂成型体は、上記光半導体素
子の光軸上で光学指向性が得られるレンズ形状で予め形
成され、上記透光性樹脂により上記光半導体素子を覆っ
て形成される第３の樹脂成型体を介して上記リードフレ
ームおよび上記第２の樹脂成型体に固着されることが好
ましい。The first resin molded body is previously formed in a lens shape capable of obtaining optical directivity on the optical axis of the optical semiconductor element, and is formed so as to cover the optical semiconductor element with the translucent resin. It is preferable to be fixed to the lead frame and the second resin molded body via a third resin molded body.

【００２１】また、上記第１の樹脂成型体は、上記透光
性樹脂により上記光半導体素子の光軸上で光学指向性が
得られるレンズ形状をなすように鋳型を用いて一体的に
形成されるものでも良い。Further, the first resin molded body is integrally formed by using a mold so as to form a lens shape with the light transmitting resin on the optical axis of the optical semiconductor element to obtain optical directivity. May be something.

【００２２】上記リードフレームは、インナーリード部
に形成されその側面が中心に向うにつれて低くなって光
を反射させる傾斜面をなしその底面が上記実装領域とな
る凹部を有することが望ましい。これにより、上記光半
導体素子の光軸から外れた光を反射させて光軸と平行な
軌道を通過させることができる。It is desirable that the lead frame has a concave portion which is formed on the inner lead portion and has an inclined surface whose side surface becomes lower toward the center to reflect light and has a bottom surface serving as the mounting region. Thus, light deviated from the optical axis of the optical semiconductor element can be reflected and can pass through a trajectory parallel to the optical axis.

【００２３】また、上記第２の樹脂成型体についても、
上記第１の樹脂成型体との接合面において光を反射させ
る傾斜面を側部に有することが望ましい。これによって
も、上記光半導体素子の光軸から外れ、上記第１または
第２のの樹脂成型体を経由して到達した光を反射させて
光軸と平行な軌道を通過させることができる。Further, the second resin molded body is also
It is desirable that the side surface has an inclined surface that reflects light at the joint surface with the first resin molded body. This also allows the light that has deviated from the optical axis of the optical semiconductor element and has reached via the first or second resin molded body to be reflected and can pass through the orbit parallel to the optical axis.

【００２４】[0024]

【発明の実施の形態】以下、本発明の実施の形態のいく
つかについて図面を参照しながら説明する。なお、以下
の図面において図３と同一の部分には同一の参照番号を
付してその説明を適宜省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same parts as those in FIG. 3 are denoted by the same reference numerals, and the description thereof will be appropriately omitted.

【００２５】（１）第１の実施の形態 まず、本発明にかかる光半導体パッケージの第１の実施
の形態について図１を参照しながら説明する。同図に示
すように、本実施形態の特徴は、光半導体素子により発
生した熱を水平方向と底面方向に放出するリードフレー
ム１３と、このリードフレーム１３を保持するとともに
透光性部材１６を支持する遮光性樹脂成型体１４とを備
える点にある。(1) First Embodiment First, an optical semiconductor package according to a first embodiment of the present invention will be described with reference to FIG. As shown in the figure, the feature of the present embodiment is that a lead frame 13 that emits heat generated by an optical semiconductor element in a horizontal direction and a bottom direction, and that holds the lead frame 13 and supports a light transmitting member 16. And a light-shielding resin molded body 14 as shown in FIG.

【００２６】図１は、本実施形態の光半導体パッケージ
１を示す説明図であり、（ａ）は平面図、（ｂ）は
（ａ）のＡ−Ａ切断面における断面図、（ｃ）は（ａ）
のＢ−Ｂ切断面における断面図を示す。FIGS. 1A and 1B are explanatory views showing an optical semiconductor package 1 according to the present embodiment, wherein FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along the line AA of FIG. (A)
2 shows a cross-sectional view taken along the line BB of FIG.

【００２７】図１に示す光半導体パッケージ１は、リー
ドフレーム１３と、光半導体素子２２と、遮光性樹脂成
型体１４と、透光性樹脂成型体１６とを備えている。The optical semiconductor package 1 shown in FIG. 1 includes a lead frame 13, an optical semiconductor element 22, a light-shielding resin molded body 14, and a light-transmitting resin molded body 16.

【００２８】リードフレーム１３は、図１（ａ）に示す
ように、第１の金属部である金属片１２と、第２の金属
部である金属片１１で構成される。金属片１２は、イン
ナーリード部と、このインナリード部から紙面において
上下方向と左方向に延在するアウタリード部とを有する
略Ｔ字型の形状で形成される。金属片１２のインナーリ
ード部とアウタリード部の境界領域には、後述する遮光
性樹脂成型体と透光性樹脂成型体との間の密着性を高め
るためのアンカーホール１８が設けられている。また、
金属片１１は、インナリード部の先端が金属片１２に所
定距離だけ隔てられて紙面右方向に延在するように配置
された略ストライプ形状で形成される。これらの金属片
１１，１２は、いずれもプレス加工または鋳造により形
成することができ、各金属片１１，１２のアウタリード
部は、第２の放熱領域をなす。As shown in FIG. 1A, the lead frame 13 includes a metal piece 12 as a first metal part and a metal piece 11 as a second metal part. The metal piece 12 is formed in a substantially T-shape having an inner lead portion and an outer lead portion extending vertically and leftward on the paper from the inner lead portion. An anchor hole 18 is provided in a boundary region between the inner lead portion and the outer lead portion of the metal piece 12 to enhance the adhesion between a light-shielding resin molding and a light-transmitting resin molding, which will be described later. Also,
The metal piece 11 is formed in a substantially striped shape in which the tip of the inner lead portion is arranged at a predetermined distance from the metal piece 12 and extends in the right direction on the paper. Each of these metal pieces 11, 12 can be formed by press working or casting, and the outer lead portions of each metal piece 11, 12 form a second heat radiation area.

【００２９】また、同図（ａ）および（ｂ）に示すよう
に、金属片１２は、インナリード部中央の素子実装領域
とアウタリード部の各端部とを除く領域がパッケージの
底面よりも高くなるように、垂直方向に折曲げられて形
成される。このような形状により、金属片１２の素子実
装領域とアウタリード部の各端部は、それぞれの底面に
おいて光半導体パッケージ１が実装される図示しない基
板の主面に接触し、また、これ以外の領域は、基板上の
配線から絶縁状態となる。As shown in FIGS. 3A and 3B, the metal piece 12 has a region higher than the bottom surface of the package except for the element mounting region at the center of the inner lead portion and each end of the outer lead portion. It is formed by being bent in the vertical direction so as to become. With such a shape, the element mounting region of the metal piece 12 and each end of the outer lead portion are in contact with the main surface of a substrate (not shown) on which the optical semiconductor package 1 is mounted on their respective bottom surfaces. Are insulated from the wiring on the substrate.

【００３０】光半導体素子２２は、金属片１２の実装領
域上に載置され、導電性接着剤２４により金属片１２の
主面に固着される。導電性接着剤２４の材料としては、
後述する遮光性樹脂成型体１４の耐熱性を考慮すると、
Ａｇ（銀）ペーストが好ましい。光半導体素子２２は、
本実施形態においてはＬＥＤ（Light Emitting Diode）
であり、端子の一つ、例えばカソードが金属片１２に電
気的に接続される。The optical semiconductor element 22 is placed on the mounting area of the metal piece 12 and is fixed to the main surface of the metal piece 12 by the conductive adhesive 24. As a material of the conductive adhesive 24,
Considering the heat resistance of the light-shielding resin molding 14 described below,
Ag (silver) paste is preferred. The optical semiconductor element 22
In this embodiment, an LED (Light Emitting Diode) is used.
And one of the terminals, for example, the cathode, is electrically connected to the metal piece 12.

【００３１】また、光半導体素子２２は、他の端子、例
えばアノードが金属ワイヤ２６を介して金属片１１に電
気的に接続される。In the optical semiconductor element 22, another terminal, for example, an anode is electrically connected to the metal piece 11 via the metal wire 26.

【００３２】遮光性樹脂成型体１４は、本実施形態にお
いて第２の樹脂成型体を構成し、遮光性樹脂により底部
と円筒状の側部とが一体的に形成されている。これによ
り、リードフレーム１３をなす金属片１１，１２は、ア
ウタリード部とインナリード部との境界領域において遮
光性樹脂成型体１４の側部により保持され、また、イン
ナリード部は、金属片１２の素子実装領域を除いて遮光
性樹脂成型体１４の底部主面により支持される。また、
遮光性樹脂成型体１４の側部上面は、中心点に近づくに
従い高さが逓減する複数の段部をなす形状を有するよう
に形成される。遮光性樹脂成型体１４の上述した形状
は、所定の鋳型にリードフレーム１３を主面が下面とな
るようにセットし、この鋳型内に遮光性樹脂を流し込む
ことにより容易に形成することができる。The light-shielding resin molding 14 constitutes a second resin molding in the present embodiment, and the bottom and the cylindrical side are integrally formed of the light-shielding resin. As a result, the metal pieces 11 and 12 forming the lead frame 13 are held by the side of the light-shielding resin molded body 14 in the boundary region between the outer lead section and the inner lead section. Except for the element mounting area, the light-shielding resin molded body 14 is supported by the bottom main surface. Also,
The upper surface of the side portion of the light-shielding resin molded body 14 is formed to have a shape of a plurality of steps whose height gradually decreases as approaching the center point. The above-described shape of the light-shielding resin molded body 14 can be easily formed by setting the lead frame 13 in a predetermined mold such that the main surface is the lower surface, and pouring the light-shielding resin into the mold.

【００３３】透光性樹脂成型体１６は、本実施形態にお
いて第１の樹脂成型体を構成し、ＬＥＤの光軸上で光学
的指向性が得られるレンズ形状を有するように成型され
る。透光性樹脂成型体１６は、本実施形態において、所
望のレンズ形状に応じて成型された鋳型を遮光性樹脂成
型体１４の側部上面の所定の段部に載置して透光性樹脂
を流し込むことにより成型される。上述したように、金
属片１１には、アンカーホール１８が設けられているの
で、これを介して透光性樹脂１６が遮光性樹脂成型体１
４と接着されることにより、透光性樹脂成型体１６が遮
光性樹脂成型体１４と強く固着する。遮光性樹脂の材料
としては、屈折率がレンズそのものに近い樹脂、例えば
ゲル状のシリコン透明樹脂を用いる。The translucent resin molded body 16 constitutes the first resin molded body in the present embodiment, and is molded so as to have a lens shape capable of obtaining optical directivity on the optical axis of the LED. In the present embodiment, the light-transmissive resin molded body 16 is formed by placing a mold molded according to a desired lens shape on a predetermined step on the side upper surface of the light-shielding resin molded body 14. It is molded by pouring. As described above, since the metal piece 11 is provided with the anchor hole 18, the translucent resin 16 is formed through the anchor hole 18 through the light-shielding resin molded body 1.
The light-transmitting resin molded body 16 is firmly fixed to the light-shielding resin molded body 14 by being bonded to 4. As a material of the light-shielding resin, a resin having a refractive index close to that of the lens itself, for example, a gel-like silicon transparent resin is used.

【００３４】なお、透光性樹脂成型体１６の成型は、上
記方法に限ることなく、例えば、ＬＥＤとの間で光学特
性が調整された半球体を予め透光性樹脂により形成して
おき、この半球体の材料と同一の透光性樹脂をＬＥＤを
覆うように半球体の底面に対応する高さまで流し込み、
その上に予め形成された半球体を載置して固着させても
良い。また、透光性樹脂により一体的に固着させること
なく、例えば乾燥窒素（Ｎ２）を充填して半球体のみを
遮光性樹脂成型体１４の側部上面の対応する段部に固着
させても良い。The molding of the translucent resin molded body 16 is not limited to the above method. For example, a hemisphere whose optical characteristics are adjusted between the LED and the LED is formed of a translucent resin in advance. Pour the same translucent resin as the material of this hemisphere to the height corresponding to the bottom surface of the hemisphere so as to cover the LED,
A hemisphere formed in advance may be placed and fixed thereon. Further, without being fixed integrally with the light-transmitting resin, for example, only the hemisphere may be fixed to the corresponding step on the upper surface of the side of the light-shielding resin molded body 14 by filling with dry nitrogen (N 2 ). good.

【００３５】本実施形態の光半導体パッケージ１によれ
ば、リードフレーム１３のインナリード部における素子
形成領域裏面側がパッケージの外部に露出して第１の放
熱領域を構成し、さらに、リードフレーム１３のアウタ
リード部においてパッケージの外部へ延在する第２の放
熱領域を４つ備えるので、従来のパッケージと比較して
熱抵抗を大幅に低減することができる。また、遮光性樹
脂成型体１４が基台となってリードフレーム１３を保持
するとともに、遮光性樹脂成型体１４が透光性樹脂成型
体１６と固着されてこれを支持するので、接着性に優
れ、外部から水分や汚染物質が進入することを確実に防
止することができる。また、遮光性樹脂成型体１４の側
部上面に複数の段部を設けるので、透光性樹脂成型体１
６とＬＥＤ２２との距離を容易に調整することができ
る。さらに、リードフレーム１３の裏面うち、放熱に直
接寄与しない領域は、透光性樹脂成型体１６の底面から
所定距離だけ離隔するように形成されるので、基板への
実装にあたり基板上配線の設計の自由度を妨げることも
ない。According to the optical semiconductor package 1 of the present embodiment, the back surface of the element forming region in the inner lead portion of the lead frame 13 is exposed to the outside of the package to constitute a first heat radiation region. Since the outer lead portion has four second heat radiation regions extending to the outside of the package, the thermal resistance can be significantly reduced as compared with the conventional package. Also, since the light-shielding resin molding 14 serves as a base to hold the lead frame 13 and the light-shielding resin molding 14 is fixed to and supports the light-transmitting resin molding 16, the adhesiveness is excellent. In addition, it is possible to reliably prevent moisture and contaminants from entering from outside. Further, since a plurality of steps are provided on the upper surface of the side portion of the light-shielding resin molding 14, the light-transmitting resin molding 1
The distance between LED 6 and LED 22 can be easily adjusted. Furthermore, since the area of the rear surface of the lead frame 13 that does not directly contribute to heat radiation is formed so as to be separated from the bottom surface of the light-transmitting resin molded body 16 by a predetermined distance, the wiring on the substrate must be designed for mounting on the substrate. There is no hindrance to freedom.

【００３６】（２）第２の実施の形態 次に、本発明にかかる光半導体パッケージの第２の実施
の形態について図２を参照しながら説明する。(2) Second Embodiment Next, an optical semiconductor package according to a second embodiment of the present invention will be described with reference to FIG.

【００３７】図２は、本実施形態の光半導体パッケージ
２の説明図であり、（ａ）はその平面図であり、また、
（２）は（ａ）のＣ−Ｃ切断面における断面図である。FIGS. 2A and 2B are explanatory views of the optical semiconductor package 2 of the present embodiment, and FIG. 2A is a plan view thereof.
FIG. 2B is a cross-sectional view taken along the line CC of FIG.

【００３８】図１に示す光半導体パッケージ１との対比
において、図２に示す光半導体パッケージ２の特徴は、
リードフレーム３４の構造にある。In contrast to the optical semiconductor package 1 shown in FIG. 1, the features of the optical semiconductor package 2 shown in FIG.
This is in the structure of the lead frame 34.

【００３９】即ち、本実施形態の光半導体パッケージ２
は、図１に示す金属片１２の代りに、金属ブロック３３
と金属片３２とを備えている。金属ブロック３３は、半
径の異なる同心円の２つの円板を積載したような形状で
一体形成され、頂部の円板部分には側面が中心に向って
低くなる傾斜面Ｓ１をなすように切欠きが設けられ、そ
の底面にＬＥＤ２２が載置される。ＬＥＤ２２は、導電
性接着剤２４により切欠きの底面に固着されて金属ブロ
ック３３と電気的に接続される。また、金属ブロック３
３の底部は、頂部よりも半径が大きい円板形状を有し、
その半径は、本実施形態において透光性樹脂成型体１６
と略同一である。さらに、遮光性樹脂成型体３６は、そ
の底面から金属ブロック３３の底部が突出するように形
成される。このような形状により、金属ブロック３３が
底面において図示しない基板上の配線に接続されるとと
もに、金属ブロック３３の大きな底面積および、遮光性
樹脂成型体３６の実装領域に対応する領域を除く底面と
基板との間の間隙により、ＬＥＤ２２で発生した熱が効
率よく放出される。That is, the optical semiconductor package 2 of the present embodiment
Is a metal block 33 instead of the metal piece 12 shown in FIG.
And a metal piece 32. The metal block 33 is integrally formed in a shape such that two concentric circular disks having different radii are stacked, and a notch is formed in the top disk portion so as to form an inclined surface S1 whose side surface becomes lower toward the center. The LED 22 is mounted on the bottom surface. The LED 22 is fixed to the bottom of the notch by a conductive adhesive 24 and is electrically connected to the metal block 33. In addition, metal block 3
3 has a disk shape with a larger radius than the top,
The radius of the transparent resin molded body 16 in the present embodiment is
Is substantially the same as Further, the light-shielding resin molded body 36 is formed such that the bottom of the metal block 33 projects from the bottom surface thereof. With such a shape, the metal block 33 is connected to the wiring on the substrate (not shown) on the bottom surface, and has a large bottom area of the metal block 33 and a bottom surface excluding a region corresponding to a mounting region of the light-shielding resin molded body 36. Due to the gap between the substrate and the substrate, heat generated by the LED 22 is efficiently released.

【００４０】また、金属ブロック３３の頂部の切欠きに
形成された傾斜面Ｓ１により、ＬＥＤ２２の光軸から外
れた光が反射して透光性樹脂成型体１６に入射し、光軸
にほぼ平行な軌道で外部へ放射される。The light off the optical axis of the LED 22 is reflected by the inclined surface S1 formed in the notch at the top of the metal block 33, enters the translucent resin molded body 16, and is substantially parallel to the optical axis. It is radiated to the outside in a natural orbit.

【００４１】さらに、遮光性樹脂成型体３６の側部は、
図２（ｂ）に示すように、内側が中心に向って低くなる
傾斜形状を有し、その表面Ｓ２には、反射材が塗布され
て白い光沢面となっている。従って、この傾斜面Ｓ２に
よっても、光軸から外れた光が反射し、透光性樹脂成型
体１６を介して光軸に平行な軌道で放射される。Further, the side portions of the light-shielding resin molded body 36
As shown in FIG. 2 (b), it has an inclined shape in which the inside becomes lower toward the center, and a reflective material is applied to the surface S2 to form a white glossy surface. Therefore, the light deviated from the optical axis is also reflected by the inclined surface S2, and is emitted through the translucent resin molded body 16 in a trajectory parallel to the optical axis.

【００４２】なお、本実施形態においては、ＬＥＤ２２
のカソードが金属ブロック３３を介して基板上配線に接
続される構成としたが、これに限ることなく、実装され
る基板の設計に応じて、例えば同図の破線に示すよう
に、金属ブロック３３の頂部周辺領域と金属片３２の先
端部とを金属ワイヤ２７にて接続し、金属片３２のパッ
ケージ外側の端部により基板上配線と接続しても勿論良
い。In this embodiment, the LED 22
Is connected to the on-substrate wiring via the metal block 33. However, the present invention is not limited to this. For example, as shown by a broken line in FIG. The top peripheral region of the metal piece 32 and the tip of the metal piece 32 may be connected by the metal wire 27, and the metal piece 32 may be connected to the wiring on the substrate by the end outside the package.

【００４３】[0043]

【発明の効果】以上詳述したとおり、本発明は、以下の
効果を奏する。As described in detail above, the present invention has the following effects.

【００４４】即ち、本発明によれば、リードフレームが
遮光性樹脂成型体により保持され、その主面に対向する
裏面のうち光半導体素子実装領域に対応する領域が上記
遮光性樹脂成型体の底部から露出して第１の放熱領域を
なすので、上記光半導体素子で発生する熱が高い効率で
外部に放出される。これにより、熱抵抗が大幅に低減さ
れた光半導体パッケージが提供される。That is, according to the present invention, the lead frame is held by the light-shielding resin molded body, and the area corresponding to the optical semiconductor element mounting area on the back surface opposite to the main surface is formed at the bottom of the light-shielding resin molded body. The heat generated in the optical semiconductor element is radiated to the outside with high efficiency because the first heat radiation area is formed by being exposed from the outside. This provides an optical semiconductor package with significantly reduced thermal resistance.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明にかかる光半導体パッケージの第１の実
施の形態の説明図である。FIG. 1 is an explanatory diagram of a first embodiment of an optical semiconductor package according to the present invention.

【図２】本発明にかかる光半導体パッケージの第２の実
施の形態の説明図である。FIG. 2 is an explanatory view of an optical semiconductor package according to a second embodiment of the present invention.

【図３】従来の技術による光半導体パッケージの一例を
示す正面図および拡大図である。FIG. 3 is a front view and an enlarged view showing an example of an optical semiconductor package according to a conventional technique.

【符号の説明】[Explanation of symbols]

１，２ 光半導体パッケージ １１，１２，３１，３２ 金属片 １３，３４ リードフレーム １４，３６ 遮光性樹脂成型体（第１の樹脂成型体） １６ 透光性樹脂成型体（第２の樹脂成型体） ２２ 光半導体素子（ＬＥＤ） ２４ 導電性接着剤 ２６，２７ 金属ワイヤ Ｓ１，Ｓ２ 傾斜面 1, 2 Optical semiconductor package 11, 12, 31, 32 Metal piece 13, 34 Lead frame 14, 36 Light-shielding resin molding (first resin molding) 16 Translucent resin molding (second resin molding) 22) Optical semiconductor element (LED) 24 Conductive adhesive 26, 27 Metal wire S1, S2 Inclined surface

フロントページの続き (72)発明者 田 村 英 男 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝マイクロエレクトロニクスセン ター内 (72)発明者 杉 崎 雅 之 神奈川県川崎市川崎区日進町７番地１ 東 芝電子エンジニアリング株式会社内 Ｆターム(参考） 4M109 AA01 BA02 CA21 DA04 DA07 DB04 EC06 EC11 EC12 EE05 EE12 EE13 GA01 GA05 5F041 AA33 DA02 DA12 DA17 DA25 DA45 DA57 EE24 Continuing on the front page (72) Inventor Hideo Tamura 1st location, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Inside the Toshiba Microelectronics Center Co., Ltd. (72) Inventor Masayuki Sugisaki Nisshin, Kawasaki-ku, Kawasaki-shi, Kanagawa 7F, Toshiba F-term in Toshiba Electronics Engineering Co., Ltd. (Reference) 4M109 AA01 BA02 CA21 DA04 DA07 DB04 EC06 EC11 EC12 EE05 EE12 EE13 GA01 GA05 5F041 AA33 DA02 DA12 DA17 DA25 DA45 DA57 EE24

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】光半導体素子と、 前記光半導体素子を主面に実装するリードフレームと、 透光性樹脂により成型され、前記光半導体素子を覆うよ
うに配設された第１の樹脂成型体と、 遮光性樹脂により成型され、前記リードフレームのイン
ナーリード部を支持する底部と、前記第１の樹脂成型体
を支持する側部とを有する第２の樹脂成型体と、を備
え、 前記リードフレームは、前記主面に対向する裏面のうち
前記光半導体素子の実装領域に対応する領域が前記第２
の樹脂成型体の底部を貫通して外部に露出するように形
成されて第１の放熱領域をなし、アウタリード部が第２
の放熱領域をなす光半導体パッケージ。An optical semiconductor element; a lead frame for mounting the optical semiconductor element on a main surface; and a first resin molded article formed of a translucent resin and disposed so as to cover the optical semiconductor element. And a second resin molded body formed of a light-shielding resin and having a bottom supporting the inner lead portion of the lead frame and a side supporting the first resin molded body. In the frame, a region corresponding to the mounting region of the optical semiconductor element on the back surface facing the main surface is the second region.
Is formed so as to penetrate through the bottom of the resin molded body and be exposed to the outside to form a first heat radiation area, and the outer lead portion is formed of a second heat radiation area.
Optical semiconductor package that constitutes a heat dissipation area. 【請求項２】前記リードフレームは、 前記光半導体素子を搭載するとともにこの光半導体素子
の第１の端子と接続された第１の金属部と、 前記光半導体素子の第２の端子と金属ワイヤにより接続
された第２の金属部と、を有し、 前記第１の金属部は、前記実装領域から互いに異なる方
向で外部へ延在するように形成され、そのアウタリード
部が複数の前記第２の放熱領域をなすことを特徴とする
請求項１に記載の光半導体パッケージ。2. The lead frame, comprising: a first metal part mounted with the optical semiconductor element and connected to a first terminal of the optical semiconductor element; and a second terminal of the optical semiconductor element and a metal wire. And a second metal portion connected to the first metal portion is formed so as to extend from the mounting region to the outside in different directions from each other. 2. The optical semiconductor package according to claim 1, wherein the optical semiconductor package forms a heat radiation area. 【請求項３】前記第１の金属部は、主面に前記光半導体
素子を搭載し底面が前記第１の樹脂成型体の底面から突
出するように配設される金属ブロックを含むことを特徴
とする請求項１に記載の光半導体パッケージ。3. The first metal part includes a metal block on which the optical semiconductor element is mounted on a main surface and whose bottom surface is disposed so as to project from the bottom surface of the first resin molded body. The optical semiconductor package according to claim 1, wherein 【請求項４】前記第１の樹脂成型体は、前記光半導体素
子の光軸上で光学指向性が得られるレンズ形状で予め成
型され、前記透光性樹脂により前記光半導体素子を覆っ
て形成される第３の樹脂成型体を介して前記リードフレ
ームおよび前記第２の樹脂成型体に固着されることを特
徴とする請求項１ないし３のいずれかに記載の光半導体
パッケージ。4. The first resin molded body is molded in advance in a lens shape capable of obtaining optical directivity on the optical axis of the optical semiconductor element, and is formed by covering the optical semiconductor element with the translucent resin. 4. The optical semiconductor package according to claim 1, wherein the optical semiconductor package is fixed to the lead frame and the second resin molded body via a third resin molded body to be formed. 【請求項５】前記第１の樹脂成型体は、前記透光性樹脂
により前記光半導体素子の光軸上で光学指向性が得られ
るレンズ形状をなすように鋳型を用いて成型されること
を特徴とする請求項１ないし３のいずれかに記載の光半
導体パッケージ。5. The method according to claim 5, wherein the first resin molded body is molded using a mold such that the transparent resin forms a lens shape on the optical axis of the optical semiconductor element to obtain optical directivity. The optical semiconductor package according to claim 1, wherein: 【請求項６】前記リードフレームは、 インナーリード部に形成され、側面が中心に向うにつれ
て低くなって光を反射させる傾斜面をなし、底面が前記
実装領域となる凹部を有することを特徴とする請求項１
ないし５のいずれかに記載の光半導体パッケージ。6. The lead frame is formed on an inner lead portion, the side surface of the lead frame is inclined toward the center and becomes lower to reflect light, and the bottom surface has a concave portion serving as the mounting region. Claim 1
6. The optical semiconductor package according to any one of claims 1 to 5. 【請求項７】前記第２の樹脂成型体は、前記第１の樹脂
成型体との接合面において光を反射させる傾斜面を側部
に有することを特徴とする請求項１ないし６のいずれか
に記載の光半導体パッケージ。7. The method according to claim 1, wherein the second resin molded body has an inclined surface for reflecting light at a joint surface with the first resin molded body on a side portion. An optical semiconductor package according to item 1.
JP36937499A 1999-12-27 1999-12-27 Optical semiconductor package Expired - Fee Related JP3964590B2 (en)

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