JP2001168671A - Surface acoustic wave device and its manufacture - Google Patents
Surface acoustic wave device and its manufactureInfo
- Publication number
- JP2001168671A JP2001168671A JP34713099A JP34713099A JP2001168671A JP 2001168671 A JP2001168671 A JP 2001168671A JP 34713099 A JP34713099 A JP 34713099A JP 34713099 A JP34713099 A JP 34713099A JP 2001168671 A JP2001168671 A JP 2001168671A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- wave device
- idt electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は圧電基板上に形成さ
れた電気信号を弾性表面波に変換する変換器あるいは弾
性表面波を電気信号に変換する変換器を有した弾性表面
波デバイスとその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device having a converter for converting an electric signal formed on a piezoelectric substrate into a surface acoustic wave or a converter for converting a surface acoustic wave to an electric signal, and its manufacture. It is about the method.
【０００２】[0002]
【従来の技術】弾性表面波デバイスは圧電基板上に形成
されたすだれ状電極あるいはインターデジタルトランス
デューサ電極（以下ＩＤＴ電極という）と呼ばれるもの
を有し、それによって電気信号と弾性表面波間の変換を
行うものである。特に、弾性表面波フィルタは小型、軽
量という特徴を持ち、移動体通信の小型化、軽量化のキ
ーデバイスとなっている。2. Description of the Related Art A surface acoustic wave device has an interdigital transducer electrode (hereinafter referred to as an IDT electrode) formed on a piezoelectric substrate, thereby converting between an electric signal and a surface acoustic wave. Things. In particular, the surface acoustic wave filter has features of small size and light weight, and has become a key device for miniaturization and weight reduction of mobile communication.
【０００３】また、製造プロセスに半導体で用いるフォ
トリソ技術、ＲＩＥ技術等の微細加工技術を利用し圧電
基板からなるウェハ上に高密度に作成できるため、量産
性に優れている。近年では弾性表面波フィルタの動作周
波数も、数百ＭＨｚ〜数ＧＨｚと高周波化されるように
なり、設計および製造精度がより厳しくなっており、温
度特性による特性変化も許容できなくなりつつあり、温
度特性に優れることが要求されるようになってきた。[0003] In addition, since high-density fabrication can be performed on a wafer made of a piezoelectric substrate by using a fine processing technique such as a photolithography technique and an RIE technique used for a semiconductor in a manufacturing process, mass productivity is excellent. In recent years, the operating frequency of surface acoustic wave filters has also been increased to several hundred MHz to several GHz, design and manufacturing accuracy has become more stringent, and characteristics change due to temperature characteristics has become unacceptable. It has been required to have excellent characteristics.
【０００４】また、実装時の半田またはシーム溶接によ
る封止を行うときのヤニや金属粉末によって弾性表面波
素子の表面が汚染されるため、弾性表面波素子の表面を
保護する保護膜を形成することが要求されるようになっ
てきた。温度特性の改善および弾性表面波素子の表面を
保護する方法として、二酸化シリコンからなる絶縁膜を
弾性表面波素子の表面に形成する方法が知られている。
特許第２７８３５５０号公報では、圧電基板として３６
°Ｙ−Ｘ伝播−リチウムタンタレート基板を用い、その
上にアルミニウムにてＩＤＴ電極を形成し、それを覆う
ように二酸化シリコン膜を形成することで温度特性を改
善する方法が示されている。In addition, since the surface of the surface acoustic wave element is contaminated by dust or metal powder when sealing by soldering or seam welding at the time of mounting, a protective film for protecting the surface of the surface acoustic wave element is formed. Has been required. As a method of improving the temperature characteristics and protecting the surface of the surface acoustic wave device, there is known a method of forming an insulating film made of silicon dioxide on the surface of the surface acoustic wave device.
In Japanese Patent No. 2783550, 36 piezoelectric substrates are used.
A method of improving temperature characteristics by forming an IDT electrode of aluminum on an IDT electrode using aluminum and then forming a silicon dioxide film so as to cover the IDT electrode is disclosed.
【０００５】しかしこの場合、特開平８−２０４４９３
号公報にも述べられているように、ＩＤＴ電極は通常ア
ルミニウムまたはアルミニウムにシリコンまたは銅を１
〜２ｗｔ％添加したアルミニウム合金にて形成してお
り、ＩＤＴ電極と二酸化シリコン膜との密着性が悪く、
製造時に二酸化シリコン膜が剥離するという問題が発生
する。前記特開平８−２０４４９３号公報では、ＩＤＴ
電極と二酸化シリコン膜の密着性を改善する方法の１つ
として、ＩＤＴ電極上にクロムからなる密着層を形成す
る方法が示されている。However, in this case, Japanese Patent Application Laid-Open No. 8-204493
As described in the publication, IDT electrodes are usually made of aluminum or aluminum and silicon or copper.
-2 wt% added aluminum alloy, the adhesion between the IDT electrode and the silicon dioxide film is poor,
There is a problem that the silicon dioxide film is peeled off during manufacturing. JP-A-8-204493 discloses an IDT.
As one method of improving the adhesion between the electrode and the silicon dioxide film, a method of forming an adhesion layer made of chromium on the IDT electrode is disclosed.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
構成では次のような課題があった。一般に、図４に示す
ように圧電基板１０上のＩＤＴ電極１１はその側面が圧
電基板１０に対して垂直になるように加工している。ま
た、スパッタまたはＣＶＤという方法によって絶縁膜１
２の形成を行うとき、圧電基板１０に対して垂直に絶縁
膜１２の粒子が飛来し堆積する。このため、従来のよう
にＩＤＴ電極１１の側面が圧電基板１０から垂直になる
ように加工を行っている場合、ＩＤＴ電極１１の側面に
は斜めから回りこんでくるエネルギーの小さい粒子のみ
が付着し成長するため、ＩＤＴ電極１１の側面の絶縁膜
１２は剥離しやすい。ＩＤＴ電極１１の表面にクロムを
形成してもＩＤＴ電極１１の表面に形成される絶縁膜１
２の密着性の向上は可能になるが、もっとも剥離が起こ
りやすいＩＤＴ電極１１の側面の絶縁膜１２の剥離を防
ぐ効果は全くないという問題がある。However, the conventional configuration has the following problems. In general, as shown in FIG. 4, the IDT electrode 11 on the piezoelectric substrate 10 is processed so that the side surface is perpendicular to the piezoelectric substrate 10. The insulating film 1 is formed by a method called sputtering or CVD.
At the time of forming 2, the particles of the insulating film 12 fly and deposit perpendicularly to the piezoelectric substrate 10. For this reason, when processing is performed so that the side surface of the IDT electrode 11 is perpendicular to the piezoelectric substrate 10 as in the related art, only particles of low energy coming from obliquely adhere to the side surface of the IDT electrode 11. Because of the growth, the insulating film 12 on the side surface of the IDT electrode 11 is easily peeled. The insulating film 1 formed on the surface of the IDT electrode 11 even if chromium is formed on the surface of the IDT electrode 11
2 can be improved, but there is a problem that there is no effect of preventing the insulating film 12 on the side surface of the IDT electrode 11 where peeling is most likely to occur.
【０００７】本発明は温度特性改善または保護膜として
絶縁膜を弾性表面波素子上に形成するとき、弾性表面波
素子のＩＤＴ電極と絶縁膜の密着性を高めることがで
き、製造時に絶縁膜の剥離を防止し信頼性の高い弾性表
面波デバイスとその製造方法を提供することを目的とす
る。According to the present invention, when an insulating film is formed on a surface acoustic wave device as a temperature characteristic improving or protective film, the adhesion between the IDT electrode of the surface acoustic wave device and the insulating film can be improved, and the insulating film can be formed during manufacturing. It is an object of the present invention to provide a surface acoustic wave device which prevents peeling and has high reliability and a method for manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に本発明の弾性表面波デバイスは、圧電基板上にすだれ
状に形成された電気信号と弾性表面波間の変換を行うＩ
ＤＴ電極と、このＩＤＴ電極および前記圧電基板の弾性
表面波の伝播路上に形成された絶縁膜とを備えた弾性表
面波デバイスにおいて、前記ＩＤＴ電極の断面形状が、
上面側より下面側の幅が広い台形形状としたもので、Ｉ
ＤＴ電極の側面に形成される前記絶縁膜の密着性を高め
ることができ、製造時に絶縁膜の剥離を防止することが
できる。すなわち、歩留まりが向上するとともに、信頼
性の高い弾性表面波デバイスが得られることになる。In order to solve the above-mentioned problems, a surface acoustic wave device according to the present invention is an I / O device for converting between an electric signal formed in an interdigital shape on a piezoelectric substrate and a surface acoustic wave.
In a surface acoustic wave device including a DT electrode, an IDT electrode and an insulating film formed on a surface acoustic wave propagation path of the piezoelectric substrate, a cross-sectional shape of the IDT electrode is:
It has a trapezoidal shape where the width of the lower side is wider than that of the upper side.
The adhesion of the insulating film formed on the side surface of the DT electrode can be enhanced, and the insulating film can be prevented from peeling off during manufacturing. That is, the yield is improved and a highly reliable surface acoustic wave device can be obtained.
【０００９】[0009]
【発明の実施の形態】本発明の請求項１に記載の発明
は、圧電基板上にすだれ状に形成された電気信号と弾性
表面波間の変換を行うＩＤＴ電極と、前記ＩＤＴ電極お
よび前記圧電基板の弾性表面波の伝播路上に形成された
絶縁膜とを備えた弾性表面波デバイスにおいて、前記Ｉ
ＤＴ電極の断面形状が上面側より下面側の幅が広い台形
形状としたもので、ＩＤＴ電極の側面に形成される絶縁
膜は圧電基板に対して垂直に飛来する粒子が付着し成長
することが可能となり、もっとも剥離しやすいＩＤＴ電
極の側面に形成される絶縁膜の密着性を高めることがで
き、製造時に絶縁膜の剥離を防止することができるとと
もに、信頼性の高い弾性表面波デバイスを得ることがで
きる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to an IDT electrode for converting between an electric signal and a surface acoustic wave formed in an interdigital shape on a piezoelectric substrate, the IDT electrode and the piezoelectric substrate. A surface acoustic wave device comprising: an insulating film formed on a surface acoustic wave propagation path;
The cross-sectional shape of the DT electrode is a trapezoidal shape in which the width of the lower surface side is wider than that of the upper surface side. This makes it possible to enhance the adhesion of the insulating film formed on the side surface of the IDT electrode, which is most easily peeled, to prevent the peeling of the insulating film during manufacturing, and to obtain a highly reliable surface acoustic wave device. be able to.
【００１０】請求項２に記載の発明は、ＩＤＴ電極を異
なる２種以上の材料を積層して形成したものであり、通
常異なる材料でＩＤＴ電極を積層形成するとＩＤＴ電極
の側面に凹凸が発生して絶縁膜が剥離しやすくなるのを
防止することができる。According to a second aspect of the present invention, the IDT electrode is formed by laminating two or more different materials. Generally, when the IDT electrodes are formed by laminating different materials, irregularities are generated on the side surfaces of the IDT electrode. Thus, the insulating film can be prevented from easily peeling off.
【００１１】請求項３に記載の発明は、ＩＤＴ電極をア
ルミニウムまたはアルミニウム合金とチタンを２層以上
積層して形成したものであり、請求項２と同じ作用を有
する。According to a third aspect of the present invention, the IDT electrode is formed by laminating two or more layers of aluminum or an aluminum alloy and titanium, and has the same effect as the second aspect.
【００１２】請求項４に記載の発明は、ＩＤＴ電極の側
面の傾斜角度を８５度から６５度の範囲としたものであ
り、ＩＤＴ電極の側面への絶縁膜の形成が確実に行える
ことになる。According to the fourth aspect of the present invention, the angle of inclination of the side surface of the IDT electrode is set in the range of 85 to 65 degrees, so that the insulating film can be reliably formed on the side surface of the IDT electrode. .
【００１３】請求項５に記載の発明は、圧電基板上に形
成した金属薄膜上にレジスト膜を形成し、これをＣ
ｌ2、ＢＣｌ3にさらにＮ2を添加したガス中でドライエ
ッチングすることにより断面が上面側より下面側の幅を
広くした形状のＩＤＴ電極を形成し、このＩＤＴ電極お
よび圧電基板の弾性表面波の伝播路上にスパッタまたは
ＣＶＤで絶縁膜を形成する製造方法であり、ＩＤＴ電極
に対して剥離しない絶縁膜を形成することができる。According to a fifth aspect of the present invention, a resist film is formed on a metal thin film formed on a piezoelectric substrate,
By performing dry etching in a gas in which N 2 is further added to l 2 and BCl 3 , an IDT electrode whose cross section is wider on the lower surface side than on the upper surface side is formed, and the surface acoustic waves of the IDT electrode and the piezoelectric substrate are formed. This is a manufacturing method of forming an insulating film on the propagation path by sputtering or CVD, and an insulating film that does not peel off from the IDT electrode can be formed.
【００１４】請求項６に記載の発明は、圧電基板上に形
成した金属薄膜上にレジスト膜を形成し、これをＣ
ｌ2、ＢＣｌ3にさらにＮ2とＡｒを添加したガス雰囲気
中でドライエッチングすることにより断面が上面側より
下面側の幅を広くした形状のＩＤＴ電極を形成し、この
ＩＤＴ電極および圧電基板の弾性表面波の伝播路上にス
パッタまたはＣＶＤにより絶縁膜を形成する製造方法で
あり、ＩＤＴ電極から剥離しない絶縁膜を形成でき信頼
性に富んだ弾性表面波デバイスを得ることができる。According to a sixth aspect of the present invention, a resist film is formed on a metal thin film formed on a piezoelectric substrate,
By performing dry etching in a gas atmosphere in which N 2 and Ar are further added to l 2 and BCl 3 , an IDT electrode whose cross section is wider on the lower surface side than on the upper surface side is formed. This is a manufacturing method in which an insulating film is formed on a propagation path of a surface acoustic wave by sputtering or CVD, and an insulating film that does not peel off from the IDT electrode can be formed, and a highly reliable surface acoustic wave device can be obtained.
【００１５】以下、本発明の実施の形態について図１〜
図３を用いて説明する。Hereinafter, embodiments of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.
【００１６】まず、図１、図２において１は圧電基板で
あり、この圧電基板１の上面中央にはすだれ状に形成さ
れたアルミニウムなどからなるＩＤＴ電極２が設けら
れ、その左右には反射器３、４が設けられている。ま
た、上記ＩＤＴ電極２には引出電極５、６が設けられて
いる。First, in FIGS. 1 and 2, reference numeral 1 denotes a piezoelectric substrate. An IDT electrode 2 made of, for example, an interdigitated aluminum is provided at the center of the upper surface of the piezoelectric substrate 1, and reflectors are provided on the left and right sides of the IDT electrodes. 3, 4 are provided. The IDT electrode 2 is provided with extraction electrodes 5 and 6.
【００１７】上記ＩＤＴ電極２部の断面を図２に示して
あり、ＩＤＴ電極２は上面側より下面側の幅が広くなる
ような台形形状の断面形状となっており、このＩＤＴ電
極２および圧電基板１の表面弾性波の伝播路上には二酸
化シリコンからなる絶縁膜７が形成されて構成されてい
る。FIG. 2 shows a cross section of the IDT electrode 2 portion. The IDT electrode 2 has a trapezoidal cross section in which the width of the lower surface side is wider than the upper surface side. An insulating film 7 made of silicon dioxide is formed on the surface acoustic wave propagation path of the substrate 1.
【００１８】また、上記ＩＤＴ電極２の断面形状の側面
の傾斜角は８５度から６５度の範囲となるように設定さ
れている。これは８５度以上になると、絶縁膜７をスパ
ッタまたはＣＶＤで形成するときに飛来してくるエネル
ギーの小さい粒子のＩＤＴ電極２の側面への付着のみと
なり、密着性の弱いものとなる。また、６５度以下にす
れば高エルネギーの垂直に飛来する粒子が主となって絶
縁膜７が形成され密着性の優れたものになるが、圧電基
板１に接する電極幅で弾性表面波デバイスの容量が決ま
るため、この幅を設計通りの寸法になるように形成しよ
うとすると、フォトリソで形成する電極幅を細らせて形
成しなければならず、より高価な解像度の高い設備が必
要となり、コストの面で不利となってしまう。The inclination angle of the side surface of the cross-sectional shape of the IDT electrode 2 is set to be in a range from 85 degrees to 65 degrees. When the angle is 85 degrees or more, particles having a small energy flying when the insulating film 7 is formed by sputtering or CVD only adhere to the side surface of the IDT electrode 2, resulting in poor adhesion. When the angle is set to 65 degrees or less, the particles having high energy and flying vertically are mainly formed to form the insulating film 7 and have excellent adhesion. Since the capacitance is determined, if this width is to be formed as designed, the width of the electrode formed by photolithography must be reduced, which requires more expensive equipment with high resolution. This is disadvantageous in terms of cost.
【００１９】このようなことからＩＤＴ電極２の側面の
傾斜角は８５度から６５度の範囲とすることが望まし
い。For this reason, it is desirable that the inclination angle of the side surface of the IDT electrode 2 be in the range of 85 to 65 degrees.
【００２０】なお、上記ＩＤＴ電極２としては１種のア
ルミニウムなどの金属材料で構成したものについて説明
したが、図３に示すようにアルミニウムまたはアルミニ
ウム合金層２ａとチタン層２ｂによる２層の構成として
もよい。Although the IDT electrode 2 has been described as being made of one kind of metal material such as aluminum, the IDT electrode 2 has a two-layer structure composed of an aluminum or aluminum alloy layer 2a and a titanium layer 2b as shown in FIG. Is also good.
【００２１】次に本発明の弾性表面波デバイスの製造方
法について説明する。圧電基板の片面の全面にアルミニ
ウムを蒸着することにより金属薄膜を形成し、この金属
薄膜上にＩＤＴ電極および反射器として残す部分にレジ
スト膜を形成し、ドライエッチングにより不要な部分の
金属材料を除去する。この時、Ｃｌ2、ＢＣｌ3にさらに
Ｎ2を添加したガス雰囲気中でドライエッチングを行う
と、Ｎ2は不活性ガスのため金属材料やレジスト膜とも
化学的な反応はしないが金属材料の種類にかかわらずイ
オン性のエッチング作用を有する。Next, a method for manufacturing a surface acoustic wave device according to the present invention will be described. A metal thin film is formed by evaporating aluminum on one entire surface of the piezoelectric substrate, a resist film is formed on the metal thin film in a portion to be left as an IDT electrode and a reflector, and unnecessary portions of the metal material are removed by dry etching. I do. At this time, if dry etching is performed in a gas atmosphere in which N 2 is further added to Cl 2 or BCl 3 , N 2 does not chemically react with a metal material or a resist film because N 2 is an inert gas. Irrespective of the above, it has an ionic etching action.
【００２２】このため、レジスト膜の一部が削られて近
傍の金属材料に付着し、このレジストの付着した部分は
マスクをされた形となり化学的なエッチングは起こらな
くなり、ＩＤＴ電極の側面は下面側になるにしたがって
幅が広くなるようにエッチングされることになり、ＩＤ
Ｔ電極の断面形状は台形形状にすることができる。For this reason, a part of the resist film is shaved and adheres to the metal material in the vicinity, and the part where the resist adheres becomes a masked form, so that chemical etching does not occur and the side surface of the IDT electrode is a lower surface. It will be etched so that the width becomes wider toward the side, and the ID
The cross-sectional shape of the T electrode can be trapezoidal.
【００２３】さらに、このドライエッチング時のガスと
して、Ｃｌ2、ＢＣｌ3にＮ2、さらにＡｒを添加する
と、イオン性が高まり、より確実にＩＤＴ電極の断面を
台形形状にエッチングできることになる。Further, when N 2 and Ar are added to Cl 2 and BCl 3 as a gas at the time of the dry etching, the ionicity is increased, and the cross section of the IDT electrode can be more reliably etched into a trapezoidal shape.
【００２４】また、このドライエッチングにおいて、下
層にチタン層、上層にアルミニウムまたはアルミニウム
合金層を蒸着した構成のものを用いると、サイドエッチ
ングのレートがアルミニウムまたはアルミニウム合金と
チタンとでは異なり、チタンの方が小さいためＩＤＴ電
極の断面を台形形状にする上でより効率的となる。In this dry etching, when a structure in which a titanium layer is deposited as a lower layer and an aluminum or aluminum alloy layer is deposited as an upper layer is used, the side etching rate is different between aluminum or an aluminum alloy and titanium. Is small, it is more efficient to make the cross section of the IDT electrode trapezoidal.
【００２５】[0025]
【発明の効果】以上のように、圧電基板上にすだれ状に
形成された電気信号と弾性表面波間の変換を行うＩＤＴ
電極と、前記ＩＤＴ電極および前記圧電基板の弾性表面
波の伝播路上に形成された絶縁膜とを備えた弾性表面波
デバイスにおいて、前記ＩＤＴ電極の断面形状が、下面
の幅が広い台形形状を有するようにあらかじめ加工する
ことで、ＩＤＴ電極と絶縁膜の密着性を高めることがで
き、ＩＤＴ電極の側面に形成される絶縁膜は圧電基板に
対して垂直に飛来する粒子が付着し成長することが可能
となり、もっとも剥離しやすいＩＤＴ電極の側面に形成
される絶縁膜の密着性を高めることができ、製造時に絶
縁膜の剥離を防止することができ、歩留まりが向上する
とともに信頼性が向上する。As described above, an IDT for converting between an electric signal and a surface acoustic wave formed in an interdigital shape on a piezoelectric substrate.
In a surface acoustic wave device including an electrode and an insulating film formed on a propagation path of the surface acoustic wave of the IDT electrode and the piezoelectric substrate, a cross-sectional shape of the IDT electrode has a trapezoidal shape with a wide lower surface. By processing in advance as described above, the adhesion between the IDT electrode and the insulating film can be increased, and the insulating film formed on the side surface of the IDT electrode can grow due to the particles flying perpendicularly to the piezoelectric substrate adhering thereto. This makes it possible to increase the adhesion of the insulating film formed on the side surface of the IDT electrode, which is most likely to be peeled off, to prevent peeling of the insulating film during manufacturing, and to improve the yield and reliability.
【図１】本発明の弾性表面波デバイスの一実施の形態の
上面図FIG. 1 is a top view of an embodiment of a surface acoustic wave device according to the present invention.
【図２】同ＩＤＴ電極部の断面図FIG. 2 is a sectional view of the IDT electrode unit.
【図３】他の例のＩＤＴ電極部の断面図FIG. 3 is a cross-sectional view of an IDT electrode portion of another example.
【図４】従来の弾性表面波デバイスのＩＤＴ電極部の断
面図FIG. 4 is a cross-sectional view of an IDT electrode portion of a conventional surface acoustic wave device.
１ 圧電基板 ２ ＩＤＴ電極 ３、４ 反射器 ５、６ 引出電極 ７ 絶縁膜 DESCRIPTION OF SYMBOLS 1 Piezoelectric substrate 2 IDT electrode 3, 4 Reflector 5, 6 Extraction electrode 7 Insulating film
フロントページの続き (72)発明者 村嶋 祐二 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5J097 AA24 AA32 BB02 DD29 FF03 HA02 KK09 Continuation of the front page (72) Inventor Yuji Murashima 1006 Kadoma, Kazuma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F term (reference) 5J097 AA24 AA32 BB02 DD29 FF03 HA02 KK09
Claims (6)
信号と弾性表面波間の変換を行うインターデジタルトラ
ンスデューサ電極と、このインターデジタルトランスデ
ューサ電極および前記圧電基板の弾性表面波の伝播路上
に形成された絶縁膜とを備えた弾性表面波デバイスにお
いて、前記インターデジタルトランスデューサ電極の断
面形状が上面側より下面側の幅が広い台形形状とした弾
性表面波デバイス。An interdigital transducer electrode for converting between an electric signal and a surface acoustic wave formed in an interdigital shape on a piezoelectric substrate, and an interdigital transducer electrode and an interdigital transducer electrode formed on a propagation path of the surface acoustic wave of the piezoelectric substrate. A surface acoustic wave device comprising: an insulating film; and a cross-sectional shape of the interdigital transducer electrode having a trapezoidal shape in which the width of the lower surface side is wider than the upper surface side.
を異なる２種以上の材料を積層して形成した請求項１に
記載の弾性表面波デバイス。2. The surface acoustic wave device according to claim 1, wherein the interdigital transducer electrode is formed by laminating two or more different materials.
をアルミニウムまたはアルミニウム合金とチタンを２層
以上積層して形成した請求項１に記載の弾性表面波デバ
イス。3. The surface acoustic wave device according to claim 1, wherein the interdigital transducer electrode is formed by laminating at least two layers of aluminum or an aluminum alloy and titanium.
の側面の傾斜角度を８５°から６５°とした請求項１記
載の弾性表面波デバイス。4. The surface acoustic wave device according to claim 1, wherein the inclination angle of the side surface of the interdigital transducer electrode is from 85 ° to 65 °.
スにおいて、インターデジタルトランスデューサ電極の
ドライエッチングのプロセスガスにＣｌ2、ＢＣｌ3にさ
らにＮ2を添加してエッチング加工を行い、その後、絶
縁膜をスパッタまたはＣＶＤで形成する弾性表面波デバ
イスの製造方法。5. The surface acoustic wave device according to claim 1, wherein Cl 2 and BCl 3 are further added with N 2 to a process gas for dry etching of the interdigital transducer electrode, and thereafter, etching is performed. A method for manufacturing a surface acoustic wave device in which an insulating film is formed by sputtering or CVD.
スにおいて、インターデジタルトランスデューサ電極の
ドライエッチングのプロセスガスにＣｌ2、ＢＣｌ3にさ
らにＮ2とＡｒを添加してエッチング加工を行い、その
後、絶縁膜をスパッタまたはＣＶＤで形成する弾性表面
波デバイスの製造方法。6. The surface acoustic wave device according to claim 1, wherein an etching process is performed by further adding N 2 and Ar to Cl 2 and BCl 3 to a process gas for dry etching of the interdigital transducer electrode, Then, a method for manufacturing a surface acoustic wave device in which an insulating film is formed by sputtering or CVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34713099A JP2001168671A (en) | 1999-12-07 | 1999-12-07 | Surface acoustic wave device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34713099A JP2001168671A (en) | 1999-12-07 | 1999-12-07 | Surface acoustic wave device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001168671A true JP2001168671A (en) | 2001-06-22 |
Family
ID=18388119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34713099A Pending JP2001168671A (en) | 1999-12-07 | 1999-12-07 | Surface acoustic wave device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001168671A (en) |
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