JP2001167889A - Display device - Google Patents
Display deviceInfo
- Publication number
- JP2001167889A JP2001167889A JP34882399A JP34882399A JP2001167889A JP 2001167889 A JP2001167889 A JP 2001167889A JP 34882399 A JP34882399 A JP 34882399A JP 34882399 A JP34882399 A JP 34882399A JP 2001167889 A JP2001167889 A JP 2001167889A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- substrate
- interface
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 238000007789 sealing Methods 0.000 claims description 63
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 239000011521 glass Substances 0.000 description 26
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000003921 oil Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000005394 sealing glass Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光がガラス基板
などの透光性基板を通過して外部に出る構造を備えた表
示装置、特にエレクトロルミネッセント（Electrolumin
escent、以下「ＥＬ」と略称する）表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device having a structure in which light is emitted to the outside through a light-transmitting substrate such as a glass substrate, and in particular, to an electroluminescent device.
(hereinafter abbreviated as “EL”).
【０００２】[0002]
【従来の技術】従来から、陰極線管（Cathode Ray Tub
e、以下「ＣＲＴ」と略称する）を用いたＣＲＴ表示装
置が用いられている。2. Description of the Related Art Conventionally, a cathode ray tube (Cathode Ray Tub) has been used.
e, hereinafter abbreviated as “CRT”).
【０００３】近年の情報化社会の発展に伴って、各種情
報処理機器の需要が高まり、これらの機器に用いて情報
を提示する情報表示装置の重要性が益々高まってきてい
る。各種情報処理機器の用途の広がりに伴って、情報表
示装置の軽量化、低容量化、低消費電力化、大画面化な
どの要求が高まり、ＣＲＴ表示装置以外の種々の表示装
置が開発されてきている。たとえば液晶表示装置、発光
ダイオード表示装置、ＥＬ表示装置、プラズマ表示装置
などの平面薄型表示装置である。液晶表示装置は、軽
量、低容積、低消費電力などの特徴があり、各種オフィ
スオートメーション（ＯＡ）機器などに広く利用されて
いる。ＥＬ表示装置は、視認性の良さおよび信頼性の高
さから、ファクトリーオートメーション（ＦＡ）機器な
どに利用されている。プラズマ表示装置は、大面積のパ
ネルを作成することが容易であることから、４０型程度
の大画面映像装置に応用されている。発光ダイオード表
示装置は、輝度の高さなどから野外の表示板などに応用
されている。[0003] With the recent development of the information-oriented society, the demand for various information processing devices has increased, and the importance of information display devices for presenting information using these devices has been increasing. With the widespread use of various information processing devices, demands for lighter, lower capacity, lower power consumption, and larger screens of information display devices have increased, and various display devices other than CRT display devices have been developed. ing. For example, flat and thin display devices such as a liquid crystal display device, a light emitting diode display device, an EL display device, and a plasma display device. Liquid crystal display devices have features such as light weight, low volume, and low power consumption, and are widely used in various office automation (OA) devices. EL display devices are used in factory automation (FA) devices and the like because of their good visibility and high reliability. The plasma display device is applied to a large-screen image device of about 40 inches because it is easy to form a panel having a large area. The light emitting diode display device is applied to an outdoor display panel or the like because of its high luminance.
【０００４】ＥＬ表示装置は、一般的には、ガラス基板
上に少なくとも一方が透光性電極である一組の電極と、
これら電極に挟まれた２つの絶縁層と、これら絶縁層に
挟まれた発光層とを備える素子構造を有する。前記一組
の電極間に交流電界を加えることによって、発光が得ら
れる。前記発光層に用いられる材料が発光色を決定し、
発光効率にも影響を及ぼす。現在最も発光効率が高い発
光材料は、ＺｎＳ：Ｍｎである。ＺｎＳ：Ｍｎ発光層
は、黄色のモノクロ表示装置において実用化されてい
る。その他、赤色発光を示すＣａＳ：ＥｕおよびＺｎ
Ｓ：Ｓｍ発光層、緑色発光を示すＺｎＳ：ＴｂおよびＣ
ａＳ：Ｃｅ発光層、青色発光を示すＺｎＳ：Ｔｍおよび
ＳｒＳ：Ｃｅ発光層が知られている。これらの発光層を
実用化してカラー表示装置を実用化するためには、さら
なる発光効率の改善が必要とされている。[0004] An EL display device generally includes a set of electrodes on a glass substrate, at least one of which is a translucent electrode.
It has an element structure including two insulating layers sandwiched between these electrodes, and a light emitting layer sandwiched between these insulating layers. Light emission is obtained by applying an AC electric field between the pair of electrodes. The material used for the light emitting layer determines the emission color,
It also affects luminous efficiency. The luminescent material with the highest luminous efficiency at present is ZnS: Mn. ZnS: Mn light emitting layers have been put to practical use in yellow monochrome display devices. In addition, CaS: Eu and Zn that emit red light
S: Sm light emitting layer, ZnS: Tb and C showing green light emission
An aS: Ce light emitting layer and ZnS: Tm and SrS: Ce light emitting layers that emit blue light are known. In order to put these light-emitting layers into practical use and to put a color display device into practical use, it is necessary to further improve the luminous efficiency.
【０００５】前記ＥＬ表示装置における素子構造は、最
も屈折率の高い発光層を屈折率の低い絶縁層で挟む光閉
じ込め構造を有する。すなわち屈折率ｎ２の屈折率の高
い層と屈折率ｎ１の屈折率の低い層とが界面で接すると
き、スネルの法則に定める臨界角であるθ＝ｓｉｎ
-1（ｎ１／ｎ２）より大きい角度で屈折率の高い層から
界面に入射する光線は、全反射によって屈折率の低い層
に進入することはできない。このように発光層における
発光の一部は、発光層と絶縁層との界面における全反射
によって、外部に出ることができない。界面が理想的に
平坦で平行に配置されている場合、発光層と絶縁層の界
面で全反射された光線は、反対側の絶縁層との界面でも
全反射されることになり、永遠に全反射を繰り返して外
部にでることができないという光線の閉じ込めの問題が
ある。The element structure in the EL display device has a light confinement structure in which a light emitting layer having the highest refractive index is sandwiched between insulating layers having a low refractive index. That is, when a layer having a high refractive index of n2 and a layer having a low refractive index of n1 are in contact with each other at an interface, a critical angle defined by Snell's law, θ = sin
Light rays entering the interface from the high refractive index layer at an angle greater than -1 (n1 / n2) cannot enter the low refractive index layer by total internal reflection. As described above, part of light emission in the light emitting layer cannot go out due to total reflection at the interface between the light emitting layer and the insulating layer. If the interface is ideally flat and arranged in parallel, light rays totally reflected at the interface between the light emitting layer and the insulating layer will also be totally reflected at the interface with the opposite insulating layer, and will be forever There is a problem of light beam confinement that reflection cannot be repeated and cannot go outside.
【０００６】また絶縁層に進入できた光線が完全に外部
の空気中へ放射されるまでには、さらに絶縁層と電極、
電極とガラス基板およびガラス基板と空気の各界面を通
過しなければならない。屈折率１．５のガラス基板と屈
折率１．０の空気の界面では、臨界角であるθ＝ｓｉｎ
-1（１．０／１．５）より大きい角度で入射する光線
は、全反射によって、ガラス基板から空気中へ出ること
ができず発光素子側に戻されてしまう。Further, by the time light rays that have entered the insulating layer are completely radiated into the outside air, the insulating layer and the electrodes,
It must pass through each interface between the electrode and the glass substrate and between the glass substrate and the air. At the interface between a glass substrate having a refractive index of 1.5 and air having a refractive index of 1.0, the critical angle θ = sin
Light rays incident at an angle larger than -1 (1.0 / 1.5) cannot escape from the glass substrate into the air due to total internal reflection and are returned to the light emitting element side.
【０００７】これらの全反射によって、発光層内での発
光は、実際その一部しか表示装置外部に放出されず、全
反射が発光効率を低下させている。Due to these total reflections, only a part of the light emitted in the light emitting layer is actually emitted to the outside of the display device, and the total reflection lowers the light emission efficiency.
【０００８】絶縁膜による光線の閉じ込めを回避するた
め、素子構造における各界面を粗面にすることによっ
て、発光層で発生した光線を効率よく外部に取り出し
て、表示装置の発光効率を高めることが試みられてい
る。各界面を粗面にすることによって、発光層と絶縁層
の界面に入射する光線が入射点で拡散放射されるため、
この界面を通過した光線の次の界面への入射角が分散さ
れて全反射が発生する割合を減ずるとともに、発光層と
絶縁層の界面で反射される光線も拡散放射され、反対側
の絶縁層との界面で反射される光線も拡散放射されて、
前述のように永遠に全反射を繰り返して外部にでること
ができないことを回避できる。これらのことは、猪口敏
夫著者による産業図書出版のディスプレイ技術シリーズ
エレクトロルミネッセントディスプレイ，ｐ１１４−１
１７において詳しく論じられている。In order to avoid confinement of light rays by the insulating film, each interface in the element structure is roughened, so that light rays generated in the light emitting layer can be efficiently extracted to the outside to increase the light emission efficiency of the display device. Attempted. By making each interface rough, light rays entering the interface between the light emitting layer and the insulating layer are diffused and emitted at the point of incidence,
The angle of incidence of light passing through this interface to the next interface is dispersed, reducing the rate of total reflection, and the light reflected at the interface between the light emitting layer and the insulating layer is also diffusely radiated, and the opposite insulating layer Light rays reflected at the interface with
As described above, it is possible to avoid that it is impossible to go out to the outside by repeating total reflection forever. These are described in Toyo Inoguchi, author of Toshio Sangyo Publishing's display technology series Electroluminescent Display, p114-1.
17 is discussed in detail.
【０００９】以上のように各層界面を粗面とすれば、光
線の閉じ込めをなくすことができ、輝度向上が得られ
る。As described above, when the interface between the layers is made rough, the confinement of the light beam can be eliminated, and the luminance can be improved.
【００１０】[0010]
【発明が解決しようとする課題】前述のように各層界面
を粗面として光線の閉じ込めをなくした構造において、
ガラス基板と空気との界面で全反射して発光素子側に戻
る光線は、輝度向上に寄与しない。なぜならば一般にガ
ラス基板は０．７〜１ｍｍ程度の厚さがあるため、全反
射されて素子側に戻った光線が次に反対側の絶縁層との
界面で反射する場所は、本来の発光位置より１ｍｍ以上
ずれる。表示装置の画素は通常０．３ｍｍ以下であるた
め、ガラスと空気の界面で全反射した後、反対側の絶縁
層との界面で全反射した反射光が外部の空気中に出る光
線は、本来発光するところの輝度向上に寄与しないだけ
でなく、本来発光しないところを明るくする。すなわち
表示面全体が明るくなって、コントラストが低下すると
いう問題が発生する。As described above, in the structure in which the interface between the layers is roughened to eliminate the confinement of light rays,
Light rays that are totally reflected at the interface between the glass substrate and air and return to the light emitting element side do not contribute to the improvement in luminance. Because the glass substrate generally has a thickness of about 0.7 to 1 mm, the place where the light totally reflected and returned to the element side is reflected at the next interface with the insulating layer on the opposite side is the original light emitting position. 1 mm or more. Since the pixel of the display device is usually 0.3 mm or less, the light that is totally reflected at the interface between the glass and air and then totally reflected at the interface with the insulating layer on the opposite side is emitted to the outside air. In addition to not contributing to the improvement of the luminance at the place where light is emitted, the place where light is not originally emitted is brightened. That is, there is a problem that the entire display surface becomes bright and the contrast is reduced.
【００１１】本発明の目的は、発光効率およびコントラ
ストに優れた表示装置を提供することである。An object of the present invention is to provide a display device having excellent luminous efficiency and contrast.
【００１２】[0012]
【課題を解決するための手段】本発明は、発光が一方面
から表示面側である他方面に通過して外部に出る透光性
基板と、透光性基板の一方面に配置され、少なくとも電
極と、光線の乱反射構造を有して発光動作を行う発光層
とを含む発光素子と、発光素子および透光性基板との間
に配置されて、透光性基板の屈折率未満の屈折率を有す
る介在層とを含むことを特徴とする表示装置である。According to the present invention, there is provided a light-transmitting substrate which emits light from one surface to the other surface, which is a display surface side, and goes out to the outside; A light-emitting element including an electrode and a light-emitting layer having a light-diffusing structure having a diffuse reflection structure of light rays; and a light-emitting element and a light-transmitting substrate; And an intervening layer having:
【００１３】また本発明は、前記発光素子が、エレクト
ロルミネッセント素子で構成されていることを特徴とす
る。Further, the present invention is characterized in that the light emitting element is constituted by an electroluminescent element.
【００１４】本発明に従えば、介在層がない場合には透
光性基板と空気との界面で全反射される光線の一部が、
透光性基板の手前の介在層と発光素子部との界面で全反
射される。厚みのある透光性基板と空気との界面で全反
射される光線が減少するため、本来発光しないところを
明るくして、表示面全体が明るくなってコントラストが
低下するという問題が改善され、薄膜状の介在層と発光
素子部との界面で全反射されて乱反射構造によって乱反
射される光線が輝度向上に寄与し、発光効率およびコン
トラストに優れた表示装置とすることができる。According to the present invention, when there is no intervening layer, a part of the light beam totally reflected at the interface between the light-transmitting substrate and the air is:
The light is totally reflected at the interface between the light-emitting element portion and the intervening layer in front of the light-transmitting substrate. Light rays totally reflected at the interface between the thick translucent substrate and the air are reduced, so that the area where light is not originally emitted is brightened, and the problem that the entire display surface is brightened and the contrast is reduced has been improved. Light rays that are totally reflected at the interface between the light-emitting element portion and the intervening layer and that are irregularly reflected by the irregular reflection structure contribute to an improvement in luminance, and a display device with excellent luminous efficiency and contrast can be provided.
【００１５】本発明は、前記介在層が、フッ化化合物か
ら成ることを特徴とする。The present invention is characterized in that the intervening layer is made of a fluorinated compound.
【００１６】また本発明は、前記フッ化化合物が、Ｍｇ
Ｆ2であることを特徴とする。Further, according to the present invention, the fluorinated compound is preferably Mg
Characterized in that it is a F 2.
【００１７】本発明に従えば、素子作成過程の最高温度
において安定して素子を作成することができるととも
に、透光性基板の屈折率より充分低い屈折率の介在層と
して、透光性基板と空気との界面で全反射される光線が
減少する割合を高め、より発光効率およびコントラスト
に優れた表示装置とすることができる。According to the present invention, the device can be manufactured stably at the highest temperature in the process of manufacturing the device, and the intermediate layer having a refractive index sufficiently lower than the refractive index of the transparent substrate can be used as an intermediate layer. It is possible to increase the rate at which light rays totally reflected at the interface with the air are reduced, and to provide a display device having more excellent luminous efficiency and contrast.
【００１８】本発明は、発光される光線を乱反射する基
板と、基板の一方面に接して配置され、少なくとも電極
と、発光動作を行う発光層とを含む発光素子と、発光素
子との間に封止空間を設けて、該発光素子を封入して基
板と接し、発光層からの発光が通過して表示面側である
外部に出る封止透光性基板と、封止透光性基板によって
発光素子との間に設けられる封止空間であって、気体ま
たは液体が封入されて、封止透光性基板の屈折率未満の
屈折率を有する封止空間とを含むことを特徴とする表示
装置である。According to the present invention, there is provided a light-emitting element including a substrate that irregularly reflects emitted light, a light-emitting element that is disposed in contact with one surface of the substrate, and includes at least an electrode and a light-emitting layer that performs a light-emitting operation. By providing a sealing space, enclosing the light-emitting element, making contact with the substrate, light-emitting from the light-emitting layer passes through to the outside on the display surface side, and a sealing light-transmitting substrate, A sealed space provided between the light-emitting element and the light-emitting element, wherein the sealed space is filled with a gas or a liquid and has a refractive index lower than the refractive index of the sealed light-transmitting substrate. Device.
【００１９】また本発明は、基板と、基板の一方面に接
して配置され、少なくとも電極と、発光動作を行う発光
層と、発光層が発光する光線を乱反射する絶縁膜とを含
む発光素子と、発光素子との間に封止空間を設けて、該
発光素子を封入して基板と接し、発光層からの発光が通
過して表示面側である外部に出る封止透光性基板と、封
止透光性基板によって発光素子との間に設けられた封止
空間であって、気体または液体が封入されて、封止透光
性基板の屈折率未満の屈折率を有する封止空間とを含む
ことを特徴とする表示装置である。According to the present invention, there is provided a light-emitting element comprising a substrate, a light-emitting element disposed in contact with one surface of the substrate, and including at least an electrode, a light-emitting layer for performing a light-emitting operation, and an insulating film for irregularly reflecting light emitted from the light-emitting layer. Providing a sealing space between the light-emitting element, sealing the light-emitting element and contacting the substrate, light-emitting layer from the light-emitting layer is passed through the sealing translucent substrate to the outside to the outside, A sealed space provided between the sealed light-transmitting substrate and the light-emitting element, in which a gas or a liquid is sealed, and a sealed space having a refractive index less than the refractive index of the sealed light-transmitting substrate; Is a display device characterized by including.
【００２０】また本発明は、前記発光素子が、エレクト
ロルミネッセント素子で構成されていることを特徴とす
る。Further, the present invention is characterized in that the light emitting element is constituted by an electroluminescent element.
【００２１】本発明に従えば、封止空間が外気とほぼ同
じ屈折率となり、封止空間がなければ封止透光性基板と
空気との界面で全反射されるすべての光線が、封止空間
と発光素子部との界面で全反射される。厚みのある封止
透光性基板と空気との界面で全反射される光線をなくす
ことができ、本来発光しないところを明るくして、表示
面全体が明るくなってコントラストが低下するという問
題がなくなり、封止空間と発光素子部との界面で全反射
されて乱反射構造によって完全に乱反射される光線が輝
度向上に寄与し、さらに発光効率およびコントラストに
優れた表示装置とすることができる。According to the present invention, the sealed space has substantially the same refractive index as the outside air, and if there is no sealed space, all rays totally reflected at the interface between the sealed translucent substrate and the air are sealed. It is totally reflected at the interface between the space and the light emitting element. Light rays totally reflected at the interface between the thick encapsulating translucent substrate and the air can be eliminated, and the area where light is not originally emitted is brightened, eliminating the problem that the entire display surface is brightened and the contrast is reduced. In addition, light rays totally reflected at the interface between the sealing space and the light emitting element portion and completely irregularly reflected by the irregular reflection structure contribute to improvement in luminance, and furthermore, a display device having excellent luminous efficiency and contrast can be provided.
【００２２】[0022]
【発明の実施の形態】図１は、本発明の実施の第１の形
態によるＥＬ表示装置の断面図である。ＥＬ表示装置
は、発光を示すＥＬ素子部１０と、水分を含んだ外気か
らＥＬ素子部１０を保護するＥＬ保護部２０とから構成
される。ＥＬ素子部１０は、透光性基板１１、介在層１
２、第１電極１３、第１絶縁膜１４、発光層１５、第２
絶縁膜１６および第２電極１７を含む。このうち第１電
極１３、第１絶縁膜１４、発光層１５、第２絶縁膜１６
および第２電極は、後述の発光素子部１８を構成する。
ＥＬ保護部２０は、封止透光性基板２１、エポキシ樹脂
２２、封止空間２３、オイル導入口２４および封止ガラ
ス２５を含む。FIG. 1 is a sectional view of an EL display device according to a first embodiment of the present invention. The EL display device includes an EL element unit 10 that emits light and an EL protection unit 20 that protects the EL element unit 10 from outside air containing moisture. The EL element section 10 includes a translucent substrate 11, an intervening layer 1,
2, the first electrode 13, the first insulating film 14, the light emitting layer 15, the second
Including an insulating film 16 and a second electrode 17. Among them, the first electrode 13, the first insulating film 14, the light emitting layer 15, the second insulating film 16
The second electrode and the second electrode constitute a light emitting element section 18 described later.
The EL protection unit 20 includes a sealing translucent substrate 21, an epoxy resin 22, a sealing space 23, an oil inlet 24, and a sealing glass 25.
【００２３】ＥＬ素子部１０は、透光性基板１１上に、
順次、介在層１２、第１電極１３、第１絶縁膜１４、発
光層１５、第２絶縁膜１６および第２電極１７を作成、
積層して形成される。The EL element section 10 is provided on a transparent substrate 11.
The intervening layer 12, the first electrode 13, the first insulating film 14, the light emitting layer 15, the second insulating film 16, and the second electrode 17 are sequentially formed.
It is formed by lamination.
【００２４】透光性基板１１は、外気の水分などによっ
て劣化する発光素子を封止するため、たとえばガラスで
実現される。この透光性基板１１側から光線が取り出さ
れる。The light-transmitting substrate 11 is made of, for example, glass in order to seal a light-emitting element which is deteriorated by moisture in the outside air. Light rays are extracted from the transparent substrate 11 side.
【００２５】介在層１２は、透光性基板１１より屈折率
が低く、後述するＥＬ素子作成過程の温度６３０℃以上
において安定な材料から選択される。透光性基板１１と
してガラス基板を用いた場合、その屈折率は１．５であ
り、上述の条件を満たす材料はフッ素化合物に多い。た
とえば、ＣａＦ2（屈折率１．３９、融点８４８℃）、
ＳｒＦ2（屈折率１．４４、融点１１９０℃）、ＬｉＦ
（屈折率１．３９、融点８４８℃）、ＭｇＦ2（屈折率
１．３８、融点１２６０℃）を用いることができる。こ
の中でもＭｇＦ2は特に屈折率が低く安定であるので最
も好ましい材料である。介在層１２は、透光性基板１１
であるガラス基板上に、電子ビーム蒸着法によって、た
とえばＭｇＦ2膜を１μｍの薄膜状に形成する。The intervening layer 12 has a lower refractive index than that of the translucent substrate 11 and is selected from a material that is stable at a temperature of 630 ° C. or higher in the EL element manufacturing process described later. When a glass substrate is used as the light-transmitting substrate 11, the refractive index is 1.5, and many materials satisfying the above-mentioned conditions are fluorine compounds. For example, CaF 2 (refractive index 1.39, melting point 848 ° C.),
SrF 2 (refractive index 1.44, melting point 1190 ° C.), LiF
(Refractive index: 1.39, melting point: 848 ° C.) and MgF 2 (refractive index: 1.38, melting point: 1,260 ° C.) can be used. Among them, MgF 2 is the most preferable material because it has a particularly low refractive index and is stable. The intervening layer 12 is formed on the transparent substrate 11.
An MgF 2 film, for example, is formed into a thin film of 1 μm on a glass substrate by electron beam evaporation.
【００２６】第１電極１３は、透光性電極であり、たと
えば錫添加酸化インジウム（IndiumTin Oxide、以下
「ＩＴＯ」と略称する）で実現される。第１電極１３で
あるＩＴＯ電極は、介在層１２上に、電子ビーム蒸着法
あるいは高周波スパッタ法によって、たとえば膜厚２０
０ｎｍで作成し、フォトレジストを用いたウエットエッ
チングによってストライプ状に形成する。The first electrode 13 is a translucent electrode, and is realized by, for example, indium tin oxide (Indium Tin Oxide, hereinafter abbreviated as “ITO”). The ITO electrode serving as the first electrode 13 is formed on the intervening layer 12 by an electron beam evaporation method or a high-frequency sputtering method, for example, to a thickness of 20 nm.
It is formed with a thickness of 0 nm, and is formed in a stripe shape by wet etching using a photoresist.
【００２７】第１絶縁膜１４として、ＩＴＯ電極上に、
高周波スパッタ法によって、たとえば膜厚４０ｎｍのＳ
ｉＯ2膜と膜厚２２０ｎｍのＳｉ3Ｎ4膜の積層膜を作成
する。As the first insulating film 14, on the ITO electrode,
For example, a 40 nm-thick S
A laminated film of an iO 2 film and a Si 3 N 4 film having a thickness of 220 nm is formed.
【００２８】発光層１５として、第１絶縁膜１４上に、
電子ビーム蒸着法によって、たとえばＭｎを０．４５重
量％含有するＺｎＳ：Ｍｎペレットを蒸着原料として膜
厚７００ｎｍのＺｎＳ：Ｍｎ層を作成する。作成された
発光層１５は、黄色発光を示す。作成された発光層１５
は、多結晶薄膜であり、発光層１５内に粒界が存在し、
この粒界によって光線がある程度乱反射される。また多
結晶薄膜であるので、発光層１５表面には微小な凹凸が
ある。As the light emitting layer 15, on the first insulating film 14,
A 700 nm thick ZnS: Mn layer is formed by electron beam evaporation using, for example, a ZnS: Mn pellet containing 0.45% by weight of Mn as a deposition material. The created light emitting layer 15 emits yellow light. Light emitting layer 15 created
Is a polycrystalline thin film, a grain boundary exists in the light emitting layer 15,
Light rays are irregularly reflected to some extent by the grain boundaries. In addition, since the light emitting layer 15 is a polycrystalline thin film, the surface thereof has minute irregularities.
【００２９】第２絶縁膜１６として、発光層１５上に、
高周波スパッタ法によって、たとえば膜厚１００ｎｍの
Ｓｉ3Ｎ4膜と膜厚３５ｎｍのＳｉＯ2膜の積層膜を作成
する。第２絶縁膜１６を作成した後、１×１０-4Ｐａ以
下の高真空中で６３０℃に加熱保持することによって、
高真空アニールを行う。この処理によってＥＬ素子の発
光輝度が向上する。As the second insulating film 16, on the light emitting layer 15,
By a high frequency sputtering method, for example, a laminated film of a 100 nm thick Si 3 N 4 film and a 35 nm thick SiO 2 film is formed. After forming the second insulating film 16, by heating and holding at 630 ° C. in a high vacuum of 1 × 10 −4 Pa or less,
High vacuum annealing is performed. By this processing, the emission luminance of the EL element is improved.
【００３０】第２電極１７として、第２絶縁膜１６上
に、加熱蒸着によって、たとえばＡｌを膜厚５００ｎｍ
で作成し、フォトレジストを用いたウエットエッチング
によって、光線を取出す方向から見て第１電極と第２電
極が垂直となるようにストライプ状に形成する。As the second electrode 17, for example, Al is formed to a thickness of 500 nm on the second insulating film 16 by heating evaporation.
And the first electrode and the second electrode are formed in a stripe shape by wet etching using a photoresist so that the first electrode and the second electrode are perpendicular to each other when viewed from a direction in which light is extracted.
【００３１】ＥＬ保護部２０において、たとえば深さ１
ｍｍで掘込み加工された１．８ｍｍ厚の封止透光性基板
２１を、その掘込み部分にＥＬ素子部１０を封じ込める
ようにして配置し、封止透光性基板２１の周辺部をエポ
キシ樹脂２２によってＥＬ素子部１０の一部分と接着す
る。前記彫込み部分には、ＥＬ素子部１０が封じ込めら
れて封止空間２３ができる。封止空間２３に、封止透光
性基板２１に予め設けられたオイル導入口２４から、シ
リカゲルを入れたシリコンオイルを注入した後、オイル
導入口２４を封止ガラス２５で封止して、ＥＬ表示装置
が作成される。In the EL protection section 20, for example, a depth of 1
A 1.8 mm-thick encapsulating translucent substrate 21 engraved with a thickness of 0.2 mm is disposed so as to enclose the EL element portion 10 in the engraved portion. The resin 22 adheres to a part of the EL element unit 10. In the engraved portion, the EL element portion 10 is sealed to form a sealed space 23. After injecting silicone oil containing silica gel into the sealing space 23 from an oil introduction port 24 provided in advance in the sealing translucent substrate 21, the oil introduction port 24 is sealed with a sealing glass 25. An EL display device is created.
【００３２】図２は、介在層１２による透光性基板１１
と空気との界面Ｂでの全反射光の低減を説明するための
断面図である。図２（１）は、第１実施形態のＥＬ表示
装置における透光性基板１１、介在層１２および発光素
子部１８を簡略化した拡大断面図である。図２（２）
は、従来のＥＬ表示装置において図２（１）に相当する
部分を示す断面図である。FIG. 2 shows a light transmitting substrate 11 formed by an intervening layer 12.
FIG. 4 is a cross-sectional view for explaining reduction of total reflection light at an interface B between the air and air. FIG. 2A is a simplified enlarged cross-sectional view of the light-transmitting substrate 11, the intervening layer 12, and the light-emitting element portion 18 in the EL display device according to the first embodiment. Fig. 2 (2)
FIG. 2 is a cross-sectional view showing a portion corresponding to FIG. 2A in a conventional EL display device.
【００３３】発光素子部１８は、前述のように各種薄膜
の積層構造である。発光素子部１８を構成する薄膜のう
ち最も屈折率の低い層は第１絶縁膜１４のＳｉＯ2膜で
あり、ガラスの屈折率１．５とほぼ同じである。発光素
子部１８から透光性基板１１であるガラス基板に入射さ
れる光線は、発光素子部１８において最も低い屈折率の
層であるＳｉＯ2膜の屈折率によって決定される。した
がって発光素子部１８の屈折率ｎ３は、ガラス層の屈折
率ｎ１と同じ屈折率１．５とすることができる。図２
（２）のように、透光性基板１１であるガラス基板と発
光素子部１８との間に介在層１２がない場合、屈折率が
同じである発光素子部１８と透光性基板１１との界面Ｃ
で光線は屈折しない。The light emitting element section 18 has a laminated structure of various thin films as described above. The layer having the lowest refractive index among the thin films constituting the light emitting element portion 18 is the SiO 2 film of the first insulating film 14, which is almost the same as the refractive index of glass 1.5. The light beam incident on the glass substrate as the light-transmitting substrate 11 from the light emitting element section 18 is determined by the refractive index of the SiO 2 film, which is the layer having the lowest refractive index in the light emitting element section 18. Therefore, the refractive index n3 of the light emitting element section 18 can be set to the same refractive index 1.5 as the refractive index n1 of the glass layer. FIG.
As in (2), when there is no intervening layer 12 between the light-transmitting substrate 11 and the glass substrate, and the light-emitting element portion 18, the light-emitting element portion 18 having the same refractive index and the light-transmitting substrate 11 have the same refractive index. Interface C
Does not refract light.
【００３４】図２（２）において、発光素子部１８から
出る光線が屈折率ｎ１の透光性基板１１であるガラス基
板と屈折率ｎ０の空気との界面Ｂで全反射するために
は、全反射の始まる入射角である臨界角θ１がスネルの
法則から、 θ１ ＝ ｓｉｎ-1（ｎ０／ｎ１） …（１） となる。In FIG. 2 (2), in order for the light emitted from the light emitting element portion 18 to be totally reflected at the interface B between the glass substrate, which is the translucent substrate 11 having the refractive index n1, and the air having the refractive index n0, the light must be totally reflected. From the Snell's law, the critical angle θ1, which is the incident angle at which reflection starts, is given by θ1 = sin −1 (n0 / n1) (1).
【００３５】したがって図２（２）において、透光性基
板１１と空気との界面Ｂで全反射する光線の入射角は、
θ１以上π／２未満となる。Accordingly, in FIG. 2B, the incident angle of the light beam totally reflected at the interface B between the light-transmitting substrate 11 and the air is:
θ1 or more and less than π / 2.
【００３６】図２（１）において、発光素子部１８から
出る光線が介在層１２を通過して透光性基板１１と空気
との界面Ｂで全反射するためには、図２（２）と同様、
全反射の始まる入射角である臨界角はθ１である。しか
し介在層１２が透光性基板１１と発光素子部１８との間
に設けられているので、発光素子部１８と介在層１２と
の界面Ａで全反射する光線がある。界面Ａで全反射を開
始する入射角である臨界角θ２以上の光線は介在層１２
を通過しないので、透光性基板１１と空気との界面Ｂで
全反射する光線から除外される。屈折率ｎ３の発光素子
部１８と屈折率ｎ２の介在層１２との界面Ａで光線が全
反射するためには、臨界角θ２がスネルの法則から、 θ２ ＝ ｓｉｎ-1（ｎ２／ｎ３） …（２） となる。したがって図２（１）において、透光性基板１
１であるガラス基板と空気との界面Ｂで全反射する光線
の入射角は、θ１以上θ２未満となる。In FIG. 2A, the light emitted from the light emitting element 18 passes through the intervening layer 12 and is totally reflected at the interface B between the translucent substrate 11 and the air. Similarly,
The critical angle which is the incident angle at which total reflection starts is θ1. However, since the intervening layer 12 is provided between the light-transmitting substrate 11 and the light emitting element section 18, there is a light beam totally reflected at the interface A between the light emitting element section 18 and the intervening layer 12. Light rays having a critical angle θ2 or more, which is an incident angle at which total reflection starts at the interface A, are
, Is excluded from light rays totally reflected at the interface B between the light-transmitting substrate 11 and the air. In order for the light beam to be totally reflected at the interface A between the light emitting element portion 18 having the refractive index n3 and the intervening layer 12 having the refractive index n2, the critical angle θ2 is determined by Snell's law as follows: θ2 = sin −1 (n2 / n3) (2) Therefore, in FIG.
The incident angle of the light ray totally reflected at the interface B between the glass substrate and the air, which is 1, is not less than θ1 and less than θ2.
【００３７】以上の論議より、介在層１２を設けること
によって透光性基板１１と空気との界面Ｂで全反射する
光線は、介在層１２を設けなかった場合に界面Ｂで全反
射する光線と比較して、（θ２−θ１）／（π／２−θ
１）倍となり、以下の式３によって求められる。 （θ２−θ１）／（π／２−θ１） ＝｛sin-1(n2/n3)− sin-1(n0/n1)｝/｛π/２− sin-1(n0/n1)｝ …（３）According to the above discussion, the light totally reflected at the interface B between the translucent substrate 11 and the air by providing the intervening layer 12 is different from the light totally reflected at the interface B when the intervening layer 12 is not provided. By comparison, (θ2−θ1) / (π / 2−θ
1) times and is obtained by the following equation 3. (Θ2−θ1) / (π / 2−θ1) = {sin −1 (n2 / n3) − sin −1 (n0 / n1)} / {π / 2−sin −1 (n0 / n1)}. 3)
【００３８】前記式３より、θ２が小さいほど、すなわ
ち介在層１２の屈折率ｎ２が低いほど、透光性基板１１
と空気との界面Ｂで全反射する光線の割合は少なくな
る。この割合は、空気の屈折率ｎ０＝１で、ガラス基板
の屈折率ｎ１＝１．５であって、前述のように発光素子
部１８の屈折率ｎ２をガラスと同じ１．５として、介在
層を屈折率ｎ２＝１．３８のＭｇＦ2膜とした場合、以
下式４によって求められる。 ｛sin-1(1.38/1.5)− sin-1(1/1.5)｝/｛π/２− sin-1(1/1.5)｝ ＝ ０．５ …（４）According to the above equation (3), as θ2 is smaller, that is, as the refractive index n2 of the intervening layer 12 is lower, the translucent substrate 11
The ratio of light rays totally reflected at the interface B between the air and the air is reduced. This ratio is such that the refractive index of air is n0 = 1, the refractive index of the glass substrate is n1 = 1.5, and the refractive index n2 of the light emitting element section 18 is 1.5, which is the same as that of glass, as described above, and the intervening layer Is a MgF 2 film having a refractive index n2 = 1.38, which is obtained by the following equation 4. {Sin -1 (1.38 / 1.5)-sin -1 (1 / 1.5)} / {π / 2-sin -1 (1 / 1.5)} = 0.5 ... (4)
【００３９】前記式４より、介在層１２としてＭｇＦ2
膜を設けることによって、透光性基板１１であるガラス
基板と空気との界面Ｂで全反射する光線は、ＭｇＦ2膜
を設けなかった場合と比較して、半分に低減されること
が判る。According to the above equation (4), MgF 2
It can be seen that by providing the film, the light rays totally reflected at the interface B between the glass substrate, which is the light-transmitting substrate 11, and the air are reduced by half as compared with the case where the MgF 2 film is not provided.
【００４０】このように透光性基板１１と空気との界面
Ｂで全反射されることなく、透光性基板１１の手前の介
在層１２と発光素子部１８との界面Ａで全反射された光
線は、前述のように発光層１５内に存在する粒界によっ
てある程度乱反射される。また前述のように発光層１５
表面には微小な凹凸があり、発光層１５の上方に作成さ
れた第２電極１７であるＡｌ電極は完全な鏡面反射にな
らないので、界面Ａで全反射された光線は、第２電極１
７によっても多少乱反射される。界面Ａで全反射され
て、発光層１５内の粒界または第２電極によって乱反射
された光線は、表示装置外部に取出されて輝度向上に貢
献する。すなわち透光性基板１１であるガラス基板の厚
みＬ１１は０．７〜１ｍｍ程度であるため、界面Ｂで全
反射されて発光素子部に戻った光線が乱反射される位置
は、本来の発光位置より１ｍｍ以上ずれる。本来の発光
位置より１ｍｍ以上ずれて乱反射される光線は、表示装
置の画素は通常０．３ｍｍ以下であるので、本来発光す
るところの輝度向上に寄与しないだけでなくコントラス
トも低下させる。薄膜状の第１電極１３と介在層１２と
の界面Ａで全反射されて発光素子部に戻った光線は、本
来発光する画素の範囲内で乱反射され、輝度向上に寄与
する。As described above, the light was not totally reflected at the interface B between the light-transmitting substrate 11 and the air, but was totally reflected at the interface A between the intervening layer 12 and the light emitting element portion 18 in front of the light-transmitting substrate 11. The light rays are irregularly reflected to some extent by the grain boundaries existing in the light emitting layer 15 as described above. Also, as described above, the light emitting layer 15
Since the surface has minute irregularities, and the Al electrode, which is the second electrode 17 formed above the light emitting layer 15, does not completely reflect specularly, the light beam totally reflected at the interface A is the second electrode 1.
7 also causes some irregular reflection. Light rays totally reflected at the interface A and irregularly reflected by the grain boundaries in the light emitting layer 15 or the second electrode are extracted to the outside of the display device and contribute to the improvement of luminance. That is, since the thickness L11 of the glass substrate which is the translucent substrate 11 is about 0.7 to 1 mm, the position where the light totally reflected at the interface B and returned to the light emitting element portion is irregularly reflected is more than the original light emitting position. It is shifted by 1 mm or more. Light rays that are diffusely reflected with a shift of 1 mm or more from the original light emitting position do not contribute to the improvement of the luminance at which light is originally emitted and also lower the contrast because the pixels of the display device are usually 0.3 mm or less. The light rays totally reflected at the interface A between the thin film-shaped first electrode 13 and the intervening layer 12 and returned to the light emitting element portion are irregularly reflected within the range of the pixel that originally emits light, thereby contributing to an improvement in luminance.
【００４１】以上のように第１実施形態によれば、透光
性基板の屈折率未満の屈折率を有する介在層を第１電極
と透光性基板との間に設けたから、介在層がない場合に
は透光性基板と空気との界面で全反射される光線の一部
が、透光性基板の手前の介在層と発光素子部との界面で
全反射される。このように厚みのある透光性基板と空気
との界面で全反射される光線が減少するため、本来発光
しないところを明るくして、表示面全体が明るくなって
コントラストが低下するという問題が改善され、薄膜状
の介在層と発光素子部との界面で全反射されて乱反射構
造によって乱反射される光線が輝度向上に寄与し、発光
効率およびコントラストに優れた表示装置を提供するこ
とが可能となる。As described above, according to the first embodiment, since the intervening layer having a refractive index less than the refractive index of the translucent substrate is provided between the first electrode and the translucent substrate, there is no intervening layer. In this case, a part of the light beam totally reflected at the interface between the light-transmitting substrate and the air is totally reflected at the interface between the light-emitting element and the intervening layer in front of the light-transmitting substrate. Light rays totally reflected at the interface between the thick light-transmitting substrate and air are reduced in this way, so that the area where light is not originally emitted is brightened, and the entire display surface is brightened and the contrast is reduced. Light that is totally reflected at the interface between the thin-film-shaped intervening layer and the light-emitting element portion and is irregularly reflected by the irregular reflection structure contributes to the improvement in luminance, thereby providing a display device excellent in luminous efficiency and contrast. .
【００４２】また介在層は、フッ化化合物、特にＭｇＦ
2から成ることを特徴とするため、ＥＬ素子作成過程の
最高温度においても安定して素子を作成することができ
るとともに、透光性基板の屈折率より充分低い屈折率の
介在層として、透光性基板と空気との界面で全反射され
る光線が減少する割合を高め、より発光効率およびコン
トラストに優れた表示装置を提供することができる。The intervening layer is made of a fluorinated compound, especially MgF
2 , the element can be manufactured stably even at the highest temperature of the EL element manufacturing process, and as an intervening layer having a refractive index sufficiently lower than the refractive index of the light transmitting substrate, The rate at which light rays totally reflected at the interface between the conductive substrate and air are reduced can be provided, and a display device having more excellent luminous efficiency and contrast can be provided.
【００４３】図３は、本発明の実施の第２の形態による
ＥＬ表示装置の断面図である。図１の実施の第１の形態
によるＥＬ表示装置の構成部分と同じ部分には同じ参照
符を用いる。ＥＬ表示装置は、発光を示すＥＬ素子部３
０と、第１封止部４０と、水分を含んだ外気からＥＬ素
子部３０を保護する第２封止部５０とから構成される。
ＥＬ素子部３０は、アルミナ基板３１、第１電極１３、
第１絶縁膜１４、発光層１５、第２絶縁膜１６および第
２電極３２を含む。このうち第１電極１３、第１絶縁膜
１４、発光層１５、第２絶縁膜１６および第２電極３２
は、発光素子部３３を構成する。第１封止部４０は、エ
ポキシ樹脂２２、第１封止空間４１および第１封止透光
性基板４２を含む。第２封止部５０は、エポキシ樹脂５
３、第２封止空間５１、第２封止透光性基板５２、オイ
ル導入口２４および封止ガラス２５を含む。FIG. 3 is a sectional view of an EL display device according to a second embodiment of the present invention. The same reference numerals are used for the same components as those of the EL display device according to the first embodiment of FIG. The EL display device has an EL element portion 3 that emits light.
0, a first sealing portion 40, and a second sealing portion 50 for protecting the EL element portion 30 from the outside air containing moisture.
The EL element section 30 includes an alumina substrate 31, a first electrode 13,
It includes a first insulating film 14, a light emitting layer 15, a second insulating film 16, and a second electrode 32. Among these, the first electrode 13, the first insulating film 14, the light emitting layer 15, the second insulating film 16, and the second electrode 32
Constitutes the light emitting element section 33. The first sealing part 40 includes the epoxy resin 22, the first sealing space 41, and the first sealing light-transmitting substrate 42. The second sealing portion 50 is made of an epoxy resin 5
3, a second sealed space 51, a second sealed translucent substrate 52, an oil inlet 24 and a sealing glass 25.
【００４４】ＥＬ素子部３０は、光線を乱反射するアル
ミナ板を基板とし、第１電極１３、第１絶縁膜１４、発
光層１５、第２絶縁膜１６および第２電極３２を順次積
層形成した二重絶縁型薄膜ＥＬ素子である。ＥＬ素子部
３０において、アルミナ板を基板とし、介在層１２を作
成しなかった点を除いて、第２絶縁膜１６まで、第１実
施形態におけるＥＬ素子部１０と同様に作成して積層形
成する。前記アルミナ板は、粉体アルミナを焼結形成し
た板であるので、光線を完全に乱反射する。The EL element section 30 is formed by using an alumina plate that irregularly reflects light as a substrate and sequentially laminating a first electrode 13, a first insulating film 14, a light emitting layer 15, a second insulating film 16 and a second electrode 32. It is a heavy insulation type thin film EL element. In the EL element section 30, the alumina plate is used as a substrate, and up to the second insulating film 16 is formed and laminated in the same manner as the EL element section 10 in the first embodiment, except that the intervening layer 12 is not formed. . Since the alumina plate is a plate formed by sintering powdered alumina, light beams are completely irregularly reflected.
【００４５】第２絶縁膜１６を作成した後、１×１０-4
Ｐａ以下の高真空中で６３０℃に加熱保持することによ
って、高真空アニールを行う。第２電極３２として、第
２絶縁膜１６上に、たとえばＩＴＯを厚膜２００ｎｍで
電子ビーム蒸着法あるいは高周波スパッタ法によって作
成し、フォトレジストを用いたウエットエッチングによ
って、第1電極１３と直交するようにストライプ状に形
成する。この構造では第１実施形態と異なり、発光は第
２電極３２側から外部に出る。After forming the second insulating film 16, 1 × 10 -4
High vacuum annealing is performed by heating and holding at 630 ° C. in a high vacuum of Pa or less. As the second electrode 32, for example, ITO is formed on the second insulating film 16 with a thickness of 200 nm by an electron beam evaporation method or a high-frequency sputtering method, and is orthogonal to the first electrode 13 by wet etching using a photoresist. To form a stripe. In this structure, unlike the first embodiment, light emission goes out from the second electrode 32 side.
【００４６】第１封止部４０は、たとえば０．１ｍｍで
掘込み加工された０．５ｍｍ厚のガラスである第１封止
透光性基板４２を、その掘込み部分にＥＬ素子部３０を
封じ込めるようにして配置し、乾燥窒素雰囲気下で第１
封止透光性基板４２の周辺部をエポキシ樹脂２２によっ
て、ＥＬ素子部３０と接着して完成させる。前記掘込み
部分には、発光素子部３３が封じ込められてできた第１
封止空間４１には、屈折率の低いの乾燥窒素層が形成さ
れる。この乾燥窒素層の屈折率は、空気とほぼ同じ屈折
率１である。The first sealing portion 40 is formed, for example, of a first sealing translucent substrate 42 made of glass having a thickness of 0.5 mm, which is formed by excavating at 0.1 mm, and the EL element portion 30 is formed at the dug portion. Arranged in a confined manner and placed first in a dry nitrogen atmosphere
The peripheral portion of the sealing translucent substrate 42 is bonded to the EL element portion 30 with the epoxy resin 22 to complete the sealing. In the dug portion, a first light-emitting element portion 33 formed by enclosing the light-emitting element portion 33 is formed.
In the sealing space 41, a dry nitrogen layer having a low refractive index is formed. The refractive index of this dry nitrogen layer is 1 which is almost the same as that of air.
【００４７】第２封止部５０は、ＥＬ素子部３０と第１
封止部４０とを防湿保護するために設けられ、第１実施
形態におけるＥＬ保護部２０と同様に形成される。ただ
し、第１実施形態が封止空間２３に発光素子部１８を封
止した構造であるのに対し、第２実施形態では、第２封
止空間５１に第１封止部４０を封止する構造である。第
２封止透光性基板５２側から光線が出るため、第２封止
空間５１を満たすシリコンオイルにはシリカゲルを混入
しない。第２封止透光性基板５２は、たとえば１ｍｍで
掘込み加工された１．８ｍｍ厚のガラスとするシリコン
オイルを注入した後、オイル導入口２４を封止ガラス２
５で封止して、ＥＬ表示装置が作成される。The second sealing portion 50 is provided between the EL element portion 30 and the first
It is provided to protect the sealing portion 40 from moisture and is formed similarly to the EL protection portion 20 in the first embodiment. However, while the first embodiment has a structure in which the light emitting element unit 18 is sealed in the sealing space 23, the second embodiment seals the first sealing unit 40 in the second sealing space 51. Structure. Since light rays are emitted from the second sealing translucent substrate 52 side, silica gel is not mixed into the silicone oil filling the second sealing space 51. The second sealing translucent substrate 52 is filled with, for example, silicon oil of 1.8 mm thick glass dug into 1 mm, and then the oil inlet 24 is sealed with the sealing glass 2.
Then, sealing is performed at step 5, and an EL display device is manufactured.
【００４８】このＥＬ表示装置の構造において、第１封
止空間４１は、外気とほぼ同じ屈折率を持っているの
で、理論的には第２封止透光性基板５２と外気との界面
で全反射される光線はなくなる。この理論について図２
を参照して説明する。In the structure of the EL display device, the first sealed space 41 has substantially the same refractive index as the outside air, and therefore, theoretically, the first sealed space 41 is at the interface between the second sealed light-transmitting substrate 52 and the outside air. No light is totally reflected. Figure 2 shows this theory.
This will be described with reference to FIG.
【００４９】図４は、第１封止空間４１による第２封止
透光性基板５２と空気との界面Ｄでの全反射光の低減を
説明するための断面図である。図４（１）は、第２実施
形態のＥＬ表示装置における透光性基板１１、介在層１
２および発光素子部１８を簡略化した拡大断面図であ
る。図４（２）は、従来のＥＬ表示装置において図４
（１）に相当する部分を示す断面図である。発光素子部
３３は、その最も屈折率の低い層がＳｉＯ2膜でガラス
の屈折率とほぼ同じであるため、第１実施形態と同様に
して、屈折率１．５とすることができる。図４（２）
は、第１封止空間４１がない場合、すなわち図３におい
て第１封止部４０がなく、ＥＬ素子部３０が第２封止空
間５１のシリコンオイルで封じ込められている場合を示
している。図４（２）において、発光素子部３３から出
る光線が屈折率ｎ１の第２封止透光性基板５２と屈折率
ｎ０の空気との界面Ｄで全反射するためには、臨界角θ
１がスネルの法則から、前記式１となる。FIG. 4 is a cross-sectional view for explaining the reduction of the total reflection light at the interface D between the second sealing translucent substrate 52 and the air by the first sealing space 41. FIG. 4A shows a light-transmitting substrate 11 and an intervening layer 1 in the EL display device according to the second embodiment.
FIG. 2 is an enlarged cross-sectional view of a light-emitting element section 2 and a light-emitting element section 18 in a simplified manner. FIG. 4B shows a conventional EL display device.
It is sectional drawing which shows the part corresponding to (1). The light emitting element section 33 has a refractive index of 1.5 as in the first embodiment because the layer with the lowest refractive index is a SiO 2 film and has substantially the same refractive index as that of glass. Fig. 4 (2)
3 shows a case where the first sealing space 41 is not provided, that is, a case where the first sealing portion 40 is not provided in FIG. 3 and the EL element portion 30 is sealed with the silicone oil in the second sealing space 51. In FIG. 4B, the critical angle θ is required for the light emitted from the light emitting element unit 33 to be totally reflected at the interface D between the second sealing translucent substrate 52 having the refractive index n1 and the air having the refractive index n0.
1 is the above equation 1 from Snell's law.
【００５０】また第２封止空間５１のシリコンオイルの
屈折率ｎ４は、１．４０であって発光素子部３３より低
い屈折率であるので、発光素子部３３と第２封止空間５
１との界面Ｆで全反射する光線がある。界面Ｆの臨界角
θ３以上の光線は介在層１２を通過しないので、第２封
止透光性基板５２と空気との界面Ｄで全反射する光線か
ら除外される。屈折率ｎ３の発光素子部３３と屈折率ｎ
４の第２封止空間５１との界面Ｆで光線が全反射するた
めには、臨界角θ３がスネルの法則から、 θ３ ＝ ｓｉｎ-1（ｎ４／ｎ３） …（５） となる。したがって図４（２）において、第２封止透光
性基板５２と空気との界面Ｄで全反射する光線の入射角
は、θ１以上θ３未満となる。The refractive index n4 of the silicon oil in the second sealed space 51 is 1.40, which is lower than that of the light emitting element section 33.
There is a light beam that is totally reflected at the interface F with 1. Light rays having a critical angle θ3 or more at the interface F do not pass through the intervening layer 12 and are excluded from light rays totally reflected at the interface D between the second sealing light-transmitting substrate 52 and air. The light emitting element unit 33 having the refractive index n3 and the refractive index n
In order for light rays to be totally reflected at the interface F of the No. 4 with the second sealing space 51, the critical angle θ3 is given by θ3 = sin −1 (n4 / n3) (5) from Snell's law. Therefore, in FIG. 4B, the incident angle of the light beam totally reflected at the interface D between the second sealing translucent substrate 52 and the air is not less than θ1 and less than θ3.
【００５１】図４（１）のように、発光素子部３３から
出る光線が、第１封止空間４１および第２封止空間５１
を通過して第２封止透光性基板５２と空気との間で全反
射するためには、図４（２）と同様、臨界角はθ１であ
る。しかし第１封止部４０を構成する第１封止透光性基
板４２および第１封止空間４１が、第２封止空間５１と
発光素子部３３との間に設けられているので、屈折率
（ｎ３＝１．５）の発光素子部３３と、窒素が封入され
て外気とほぼ同じ屈折率（ｎ２＝１）の第１封止空間４
１との界面Ｅで光線が全反射を始める入射角θ４はθ１
と等しくなる。すなわち第１封止部４０がない構造にお
いて界面Ｄで全反射されるすべての光線（入射角がθ１
以上θ３未満の光線）が、第１封止部４０を設けた構造
においては、界面Ｅで全反射され、界面Ｄで全反射され
る光線は存在しなくなる。As shown in FIG. 4A, the light emitted from the light emitting element 33 is transmitted to the first sealed space 41 and the second sealed space 51.
In order to totally reflect between the second sealing translucent substrate 52 and the air through the substrate, the critical angle is θ1 as in FIG. 4B. However, since the first sealing translucent substrate 42 and the first sealing space 41 that constitute the first sealing unit 40 are provided between the second sealing space 51 and the light emitting element unit 33, refraction is performed. Light emitting element 33 having a refractive index (n3 = 1.5) and a first sealed space 4 filled with nitrogen and having a refractive index (n2 = 1) substantially equal to that of outside air.
The incident angle θ4 at which the light beam starts total reflection at the interface E with 1 is θ1
Becomes equal to That is, in the structure without the first sealing portion 40, all rays totally reflected at the interface D (the incident angle is θ1
In the structure in which the first sealing portion 40 is provided, light rays that are less than θ3 are totally reflected at the interface E and no light rays are totally reflected at the interface D.
【００５２】第１封止空間４１の屈折率を外気とほぼ同
じ屈折率１にした場合、第２封止透光性基板５２と外気
との界面Ｄで全反射する光線をなくすことができる。When the refractive index of the first sealing space 41 is substantially the same as the refractive index of the outside air, the light totally reflected at the interface D between the second sealing light transmitting substrate 52 and the outside air can be eliminated.
【００５３】このように第２封止透光性基板５２と空気
との界面Ｄで全反射されることなく、第２封止透光性基
板５２、第２封止空間５１および第１封止透光性基板４
２の手前の第１封止空間４１と発光素子部３３との界面
Ｅで全反射された光線は、アルミナ基板３１によって完
全に乱反射される。界面Ｅで全反射されて、アルミナ基
板３１によって乱反射された光線は、表示装置外部に取
出されて輝度向上に貢献する。すなわち光線が通過する
第２封止部５０および第１封止透光性基板４２の厚みＬ
１２は１．８ｍｍ程度であるため、界面Ｄで全反射され
て発光素子部３３に戻った光線が乱反射される位置は、
本来の発光位置より１ｍｍ以上ずれる。本来の発光位置
より１ｍｍ以上ずれて乱反射される光線は、表示装置の
画素は通常０．３ｍｍ以下であるため、本来発光すると
ころの輝度向上に寄与しないだけでなくコントラストも
低下させる。発光素子部３３の第２電極３２または第２
絶縁膜１６と第１封止空間４１との界面Ｅで全反射され
て発光素子部に戻った光線は、本来発光する画素の範囲
内で乱反射され、輝度向上に寄与する。As described above, without being totally reflected at the interface D between the second sealing light transmitting substrate 52 and the air, the second sealing light transmitting substrate 52, the second sealing space 51 and the first sealing light Translucent substrate 4
The light beam totally reflected at the interface E between the first sealing space 41 and the light emitting element unit 33 before the second is completely irregularly reflected by the alumina substrate 31. Light rays totally reflected at the interface E and irregularly reflected by the alumina substrate 31 are extracted to the outside of the display device and contribute to improvement in luminance. That is, the thickness L of the second sealing portion 50 and the first sealing translucent substrate 42 through which light passes.
12 is approximately 1.8 mm, the position where the light ray totally reflected at the interface D and returned to the light emitting element unit 33 is irregularly reflected is:
It is shifted by 1 mm or more from the original light emitting position. Light rays that are irregularly reflected with a shift of 1 mm or more from the original light emitting position do not contribute to the improvement of the luminance at which light is originally emitted and also lower the contrast because the pixel of the display device is usually 0.3 mm or less. The second electrode 32 or the second electrode 32 of the light emitting element unit 33
The light ray totally reflected at the interface E between the insulating film 16 and the first sealing space 41 and returned to the light emitting element portion is irregularly reflected within the range of the pixel that originally emits light, thereby contributing to an improvement in luminance.
【００５４】以上のように第２実施形態によれば、基板
上の発光素子を、発光素子との間に封止空間を設けて封
止する封止透光性基板側から、光線を取り出す構造の表
示装置において、封止空間に気体または液体を封入し、
かつ基板が光線を乱反射する構造としたから、封止空間
が外気とほぼ同じ屈折率となり、封止空間がなければ封
止透光性基板と空気との界面で全反射されるすべての光
線が、封止空間と発光素子部との界面で全反射される。
このように厚みのある封止透光性基板と空気との界面で
全反射される光線をなくすことができ、本来発光しない
ところを明るくして、表示面全体が明るくなってコント
ラストが低下するという問題がなくなり、封止空間と発
光素子部との界面で全反射されて完全に乱反射される光
線が輝度向上に寄与し、さらに発光効率およびコントラ
ストに優れた表示装置を提供することが可能となる。As described above, according to the second embodiment, the light-emitting element on the substrate is provided with a sealing space between the light-emitting element and the light-emitting element, and the light is extracted from the sealed translucent substrate side. In the display device, gas or liquid is sealed in the sealed space,
In addition, since the substrate has a structure that reflects light rays irregularly, the sealed space has almost the same refractive index as the outside air, and if there is no sealed space, all light rays totally reflected at the interface between the sealed translucent substrate and the air The light is totally reflected at the interface between the sealing space and the light emitting element.
Light rays totally reflected at the interface between the thick sealing translucent substrate and the air can be eliminated as described above, and a portion that does not emit light is brightened, and the entire display surface is brightened and the contrast is reduced. The problem is eliminated, and light rays totally reflected and completely irregularly reflected at the interface between the sealing space and the light-emitting element portion contribute to the improvement in luminance, and it is possible to provide a display device excellent in luminous efficiency and contrast. .
【００５５】本発明の実施のさらなる他の形態として、
実施の第２の形態において、光線の乱反射を起こすため
の反射構造として、基板に用いたアルミナ板に代えて、
第１絶縁膜に粉末誘電体を焼成した厚膜高誘電体を用い
てもよい。厚膜高誘電体は、チタン酸バリウムなどの誘
電率１００００程度の高誘電率誘電体材料の粉末を、溶
媒に溶かし、ペースト状にしたものを印刷塗布した後、
たとえば９００℃程度で加熱焼成することによって膜厚
３０μｍ程度の厚膜に形成される。形成された厚膜高誘
電体は、粉末誘電体を焼成したものなので、光線を乱反
射することができる。このような厚膜高誘電体の第１絶
縁膜を用いた実施形態によるＥＬ表示装置は、実施の第
２の形態と同様の効果を得ることが可能である。As still another embodiment of the present invention,
In the second embodiment, instead of the alumina plate used for the substrate, a reflecting structure for causing irregular reflection of light rays is used.
As the first insulating film, a thick film high dielectric obtained by firing a powder dielectric may be used. Thick film high dielectric material is obtained by dissolving powder of high dielectric constant dielectric material such as barium titanate having a dielectric constant of about 10000 in a solvent and printing and applying a paste-like material.
For example, by heating and baking at about 900 ° C., a thick film having a thickness of about 30 μm is formed. Since the formed thick film high dielectric substance is obtained by firing a powder dielectric substance, light rays can be irregularly reflected. The EL display device according to the embodiment using such a thick-film high-dielectric first insulating film can obtain the same effect as that of the second embodiment.
【００５６】実施の第１および第２の形態ならびにさら
なる他の形態における二重絶縁型ＥＬ素子以外の表示装
置、すなわち有機ＥＬ素子などの他のＥＬ表示装置、あ
るいはＥＬ表示装置以外の表示装置であっても、ガラス
基板と空気との界面で全反射が生じる構造の表示装置に
おいて、本発明の構造を設ければ、前述の実施の形態と
同様の効果を奏することが可能である。A display device other than the double-insulation type EL device in the first and second embodiments and still another embodiment, that is, another EL display device such as an organic EL device, or a display device other than the EL display device. Even so, if the structure of the present invention is provided in a display device having a structure in which total reflection occurs at the interface between the glass substrate and air, the same effect as in the above-described embodiment can be obtained.
【００５７】[0057]
【発明の効果】本発明によれば、介在層がない場合には
透光性基板と空気との界面で全反射される光線の一部
が、透光性基板の手前の介在層と発光素子部との界面で
全反射され、厚みのある透光性基板と空気との界面で全
反射される光線が減少するため、薄膜状の介在層と発光
素子部との界面で全反射されて乱反射構造によって乱反
射される光線が輝度向上に寄与して、発光効率およびコ
ントラストに優れた表示装置を提供することが可能とな
る。According to the present invention, when there is no intervening layer, a part of the light beam totally reflected at the interface between the light-transmitting substrate and the air is partially transmitted to the light-emitting element by the intervening layer in front of the light-transmitting substrate. The light that is totally reflected at the interface between the light-emitting element and the light-transmissive substrate, which is totally reflected at the interface with the air, is reduced. Light that is irregularly reflected by the structure contributes to an increase in luminance, so that a display device with excellent luminous efficiency and contrast can be provided.
【００５８】また本発明によれば、素子作成過程の最高
温度において安定して素子を作成することができるとと
もに、透光性基板の屈折率より充分低い屈折率の介在層
として、透光性基板と空気との界面で全反射される光線
が減少する割合を高め、より発光効率およびコントラス
トに優れた表示装置を提供することが可能となる。Further, according to the present invention, the device can be manufactured stably at the highest temperature in the process of manufacturing the device, and as the intervening layer having a refractive index sufficiently lower than the refractive index of the translucent substrate, It is possible to increase the rate at which light rays totally reflected at the interface between air and air are reduced, and to provide a display device with more excellent luminous efficiency and contrast.
【００５９】また本発明によれば、封止空間が外気とほ
ぼ同じ屈折率となり、封止空間がなければ封止透光性基
板と空気との界面で全反射されるすべての光線が、封止
空間と発光素子部との界面で全反射され、厚みのある封
止透光性基板と空気との界面で全反射される光線をなく
すことができ、封止空間と発光素子部との界面で全反射
されて乱反射構造によって完全に乱反射される光線が輝
度向上に寄与して、さらに発光効率およびコントラスト
に優れた表示装置を提供することが可能となる。According to the present invention, the sealed space has substantially the same refractive index as the outside air, and if there is no sealed space, all rays totally reflected at the interface between the sealed translucent substrate and the air are sealed. Light rays totally reflected at the interface between the stationary space and the light emitting element portion and totally reflected at the interface between the thick sealing translucent substrate and the air can be eliminated, and the interface between the sealing space and the light emitting element portion can be eliminated. Light that is totally reflected by the diffuse reflection structure and completely diffusely reflected by the diffuse reflection structure contributes to an improvement in luminance, and it is possible to provide a display device with excellent luminous efficiency and contrast.
【図１】本発明の実施の第１の形態によるＥＬ表示装置
の断面図である。FIG. 1 is a sectional view of an EL display device according to a first embodiment of the present invention.
【図２】介在層１２による透光性基板１１と空気との界
面Ｂでの全反射光の低減を説明するための断面図であ
る。（１）は、図１のＥＬ表示装置の一部を簡略化した
拡大断面図である。（２）は、従来のＥＬ表示装置にお
いて（１）に相当する部分を示す断面図である。FIG. 2 is a cross-sectional view for explaining reduction of total reflection light at an interface B between a light-transmitting substrate 11 and air by an intervening layer 12; (1) is an enlarged cross-sectional view in which a part of the EL display device in FIG. 1 is simplified. (2) is a sectional view showing a portion corresponding to (1) in a conventional EL display device.
【図３】本発明の実施の第２の形態によるＥＬ表示装置
の断面図である。FIG. 3 is a sectional view of an EL display device according to a second embodiment of the present invention.
【図４】第１封止空間４１による第２封止透光性基板５
２と空気との界面Ｄでの全反射光の低減を説明するため
の断面図である。（１）は、図３のＥＬ表示装置の一部
を簡略化した拡大断面図である。（２）は、従来のＥＬ
表示装置において図４（１）に相当する部分を示す断面
図である。FIG. 4 shows a second sealed translucent substrate 5 formed by a first sealed space 41.
FIG. 5 is a cross-sectional view for explaining reduction of total reflection light at an interface D between the second and the air. (1) is an enlarged cross-sectional view in which a part of the EL display device in FIG. 3 is simplified. (2) is a conventional EL
FIG. 5 is a cross-sectional view illustrating a portion corresponding to FIG. 4A in the display device.
【符号の説明】 １１ 透光性基板 １２ 介在層 １３ 第１電極 １４ 第１絶縁膜 １５ 発光層 １６ 第２絶縁膜 １７ 第２電極 １８ 発光素子部[Description of Reference Numerals] 11 translucent substrate 12 intervening layer 13 first electrode 14 first insulating film 15 light emitting layer 16 second insulating film 17 second electrode 18 light emitting element section
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3K007 AB02 AB03 AB17 BB01 BB02 BB03 BB04 CA01 CB01 DA05 DB02 DC02 DC04 EC03 FA01 FA02 FA03 5C094 AA06 AA10 AA14 AA60 BA27 DA07 EA05 EB02 HA08 5G435 AA00 AA02 BB05 EE09 GG25 HH02 KK05 LL00 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference)
Claims (6)
に通過して外部に出る透光性基板と、 透光性基板の一方面に配置され、少なくとも電極と、光
線の乱反射構造を有して発光動作を行う発光層とを含む
発光素子と、 発光素子および透光性基板との間に配置されて、透光性
基板の屈折率未満の屈折率を有する介在層とを含むこと
を特徴とする表示装置。1. A light-transmitting substrate which emits light from one surface to the other surface, which is a display surface side, and goes to the outside; a light-transmitting substrate, the light-transmitting substrate is arranged on one surface of the light-transmitting substrate, and at least an electrode; A light-emitting element including a light-emitting layer having a light-emitting operation and a light-emitting element; and an intervening layer disposed between the light-emitting element and the light-transmitting substrate and having a refractive index lower than that of the light-transmitting substrate. A display device characterized by the above-mentioned.
とを特徴とする請求項１記載の表示装置。2. The display device according to claim 1, wherein the intervening layer is made of a fluorinated compound.
とを特徴とする請求項２記載の表示装置。3. The display device according to claim 2 , wherein the fluorinated compound is MgF 2 .
板の一方面に接して配置され、少なくとも電極と、発光
動作を行う発光層とを含む発光素子と、 発光素子との間に封止空間を設けて、該発光素子を封入
して基板と接し、発光層からの発光が通過して表示面側
である外部に出る封止透光性基板と、 封止透光性基板によって発光素子との間に設けられる封
止空間であって、気体または液体が封入されて、封止透
光性基板の屈折率未満の屈折率を有する封止空間とを含
むことを特徴とする表示装置。4. A light-emitting element, comprising: a substrate that diffusely reflects emitted light; a light-emitting element that is disposed in contact with one surface of the substrate and includes at least an electrode and a light-emitting layer that performs a light-emitting operation; Providing a space, enclosing the light-emitting element, making contact with the substrate, transmitting light emitted from the light-emitting layer to the outside on the display surface side, and a light-emitting element formed by the sealed light-transmitting substrate. A sealed space provided between the sealed light-transmitting substrate and a sealed space having a refractive index less than that of the sealed light-transmitting substrate.
光動作を行う発光層と、発光層が発光する光線を乱反射
する絶縁膜とを含む発光素子と、 発光素子との間に封止空間を設けて、該発光素子を封入
して基板と接し、発光層からの発光が通過して表示面側
である外部に出る封止透光性基板と、 封止透光性基板によって発光素子との間に設けられた封
止空間であって、気体または液体が封入されて、封止透
光性基板の屈折率未満の屈折率を有する封止空間とを含
むことを特徴とする表示装置。5. A light emitting element which is disposed in contact with one surface of the substrate and includes at least an electrode, a light emitting layer which performs a light emitting operation, and an insulating film which irregularly reflects light emitted from the light emitting layer; A sealing light-transmitting substrate in which the light-emitting element is sealed and in contact with the substrate, and light emitted from the light-emitting layer passes through to the outside on the display surface side; A sealed space provided between the light emitting element and the light emitting element by the optical substrate, wherein the sealed space is filled with a gas or a liquid and has a refractive index less than the refractive index of the sealed light transmitting substrate. A display device characterized by the above-mentioned.
ント素子で構成されていることを特徴とする請求項１、
４または５記載の表示装置。6. The light-emitting device according to claim 1, wherein the light-emitting device is formed of an electroluminescent device.
The display device according to 4 or 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34882399A JP2001167889A (en) | 1999-12-08 | 1999-12-08 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34882399A JP2001167889A (en) | 1999-12-08 | 1999-12-08 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001167889A true JP2001167889A (en) | 2001-06-22 |
Family
ID=18399623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34882399A Pending JP2001167889A (en) | 1999-12-08 | 1999-12-08 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001167889A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045642A (en) * | 2001-07-27 | 2003-02-14 | Sony Corp | Display element and its manufacturing method |
| KR100478525B1 (en) * | 2001-07-30 | 2005-03-28 | 삼성에스디아이 주식회사 | Light-Emitting Device and Display Device Employing Electroluminescence with no Light Leakage and Improved Light Extraction Efficiency |
| KR100894651B1 (en) * | 2002-07-08 | 2009-04-24 | 엘지디스플레이 주식회사 | Active Matrix Organic Electro-Luminescence Display Panel And Method Of Fabricating The Same |
| JP2010060858A (en) * | 2008-09-04 | 2010-03-18 | Hitachi Displays Ltd | Liquid crystal display device |
-
1999
- 1999-12-08 JP JP34882399A patent/JP2001167889A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045642A (en) * | 2001-07-27 | 2003-02-14 | Sony Corp | Display element and its manufacturing method |
| KR100478525B1 (en) * | 2001-07-30 | 2005-03-28 | 삼성에스디아이 주식회사 | Light-Emitting Device and Display Device Employing Electroluminescence with no Light Leakage and Improved Light Extraction Efficiency |
| KR100894651B1 (en) * | 2002-07-08 | 2009-04-24 | 엘지디스플레이 주식회사 | Active Matrix Organic Electro-Luminescence Display Panel And Method Of Fabricating The Same |
| JP2010060858A (en) * | 2008-09-04 | 2010-03-18 | Hitachi Displays Ltd | Liquid crystal display device |
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