JP2001144075A - Plasma treatment device - Google Patents
Plasma treatment deviceInfo
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- JP2001144075A JP2001144075A JP32402599A JP32402599A JP2001144075A JP 2001144075 A JP2001144075 A JP 2001144075A JP 32402599 A JP32402599 A JP 32402599A JP 32402599 A JP32402599 A JP 32402599A JP 2001144075 A JP2001144075 A JP 2001144075A
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- work
- electrode
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- processing apparatus
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Abstract
Description
【発明の属する技術分野】本発明は、減圧された密閉空
間内にワークを載置してプラズマ処理を行うプラズマ処
理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing a plasma process by placing a workpiece in a closed space under reduced pressure.
【従来の技術】プラズマ処理装置では、密閉空間内の電
極上に基板などの処理対象物を載置して減圧下で放電を
発生させることによりプラズマ処理を行う。放電には発
熱が伴うため、プラズマ処理を継続する過程で処理対象
物の温度が上昇する。対象物が熱劣化を起こしやすい基
板などの場合には、過熱を防止するための冷却手段が設
けられる。この冷却手段はワークが載置される電極を冷
却することにより、ワークに発生する熱を電極に伝導さ
せてワークの過度の温度上昇を防止するものである。2. Description of the Related Art In a plasma processing apparatus, an object to be processed such as a substrate is placed on an electrode in a closed space, and a plasma process is performed by generating a discharge under reduced pressure. Since the discharge involves heat generation, the temperature of the processing target increases in the process of continuing the plasma processing. In the case where the target is a substrate or the like which is liable to be thermally degraded, a cooling means for preventing overheating is provided. The cooling means cools an electrode on which the work is placed, thereby conducting heat generated in the work to the electrode and preventing an excessive rise in temperature of the work.
【発明が解決しようとする課題】しかしながら、ワーク
の種類によっては、薄型基板や多層基板など熱によって
そりや撓みを生じやすいものがある。また基板によって
は表面に形成された回路パターンによる凹凸を有するも
のもある。このようなワークを対象とする場合には、ワ
ークが金属でできた電極表面に十分に密着しないためワ
ークから電極への熱伝導が阻害され、電極自体は冷却さ
れていてもその冷却効果はワークには及ばず、十分な冷
却効果が得られないという問題点があった。そこで本発
明は、ワークからの熱伝導を確保して十分な冷却効果を
得ることができるプラズマ処理装置を提供することを目
的とする。However, depending on the type of work, a thin substrate or a multi-layer substrate may be easily warped or bent by heat. Some substrates have irregularities due to the circuit pattern formed on the surface. In the case of such a work, heat conduction from the work to the electrode is hindered because the work does not sufficiently adhere to the electrode surface made of metal, so that even if the electrode itself is cooled, its cooling effect is reduced. However, there was a problem that a sufficient cooling effect could not be obtained. Therefore, an object of the present invention is to provide a plasma processing apparatus capable of securing heat conduction from a work and obtaining a sufficient cooling effect.
【課題を解決するための手段】請求項１記載のプラズマ
処理装置は、減圧された密閉空間内にワークを載置して
このワークに対してプラズマ処理を行うプラズマ処理装
置であって、前記密閉空間内に配置され表面に熱伝導性
の樹脂シートが装着されたワーク載置部と、前記密閉空
間内にプラズマを発生させるプラズマ発生手段と、前記
ワーク載置部を冷却する冷却手段とを備えた。請求項２
記載のプラズマ処理装置は、請求項１記載のプラズマ処
理装置であって、前記熱伝導性の樹脂シートは、可撓性
を有する。請求項３記載のプラズマ処理装置は、請求項
１記載のプラズマ処理装置であって、前記熱伝導性の樹
脂シートは、ワーク表面に付着するタック性を有する。
請求項４記載のプラズマ処理装置は、請求項１記載のプ
ラズマ処理装置であって、前記ワーク載置部に載置され
たワークを前記樹脂シートに押し付ける押し付け手段を
備えた。本発明によれば、処理対象のワークが載置され
るワーク載置部の表面に熱伝導性の樹脂シートを装着す
ることにより、ワークからの熱伝導を確保して十分な冷
却効果を得ることができる。According to a first aspect of the present invention, there is provided a plasma processing apparatus for mounting a work in a depressurized closed space and performing a plasma process on the work. A work placement part arranged in a space and having a thermally conductive resin sheet mounted on a surface thereof; a plasma generating means for generating plasma in the closed space; and a cooling means for cooling the work placement part. Was. Claim 2
The above described plasma processing apparatus is the plasma processing apparatus according to claim 1, wherein the heat conductive resin sheet has flexibility. According to a third aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein the thermally conductive resin sheet has tackiness to adhere to a work surface.
A plasma processing apparatus according to a fourth aspect is the plasma processing apparatus according to the first aspect, further comprising pressing means for pressing a work placed on the work placement section against the resin sheet. According to the present invention, by attaching a thermally conductive resin sheet to the surface of a work mounting portion on which a work to be processed is mounted, heat conduction from the work is ensured and a sufficient cooling effect is obtained. Can be.
【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図１は本発明の一実施の形態のプラ
ズマ処理装置の正断面図、図２、図３は同プラズマ処理
装置の部分斜視図、図４は同プラズマ処理装置の基板お
よびキャリアの斜視図である。まず図１を参照してプラ
ズマ処理装置の構造を説明する。図１において、水平に
配設された基部であるベース部２の中央部には開口部２
ａが設けられており、開口部２ａ内には下方から電極３
が絶縁部材３ａを介して装着されている。電極３の上面
は処理対象のワークである基板４を載置するワーク載置
部となっている。図２に示すように、電極３の上面には
熱伝導性の樹脂シートであるシート部材５が装着されて
いる。シート部材５上には処理対象の基板４が載置され
る。シート部材５は、熱伝導性に優れたグラファイトや
アルミナ等の熱伝導材を混入したシリコン系の樹脂など
高熱伝導性でかつ可撓性を有する材質で作られており、
上面に基板４が載置された状態では、基板の変形または
凹凸状態にならって基板の下面に容易に密着すると共
に、プラズマ処理により温度が上昇した基板の熱を電極
に伝達する性質に優れている。良好な撓み特性と熱伝導
特性を確保するためには、シート部材５の厚みは、０．
１ｍｍ〜５ｍｍの範囲であることが望ましい。また、電
極３上にシート部材５を装着する場合に、１枚続きのシ
ート部材５を用いる代わりに、図３に示すように分割さ
れた複数のシート部材５Ａを組み合わせて使用するよう
にしてもよい。ベース部２の上方には、蓋部材１０が図
示しない昇降手段により昇降自在に配設されている。蓋
部材１０が下降した状態では、蓋部材１０の下端部はベ
ース部材２の上面のシール部材に当接する。これによ
り、電極３、ベース部材２および蓋部材１０で閉囲され
る空間は密閉され、プラズマ処理を行うための密閉空間
である処理室１１を形成する。蓋部材１０の天井面に
は、当接部材１９を備えた基板押さえ１８が垂直に配設
されている。基板押さえ１８は、基板４の縁部を押さえ
付ける位置に複数配設されており、蓋部材１０を下降さ
せた状態では当接部材１９が基板４の縁部に当接してシ
ート部材５を介して基板４を電極３の上面に押し付け
る。この基板押さえ１８は電極３上に載置された基板４
をシート部材５へ押し付ける押し付け手段となってい
る。この基板押さえ１８が基板４をシート部材５へ押し
付けると、シート部材５の変形によりシート部材５と基
板４との密着面積が増加する。ベース部２には排気孔２
ｂが設けられており、排気孔２ｂには大気ベント部１
３、真空計１４および真空ポンプ１５が接続されてい
る。真空ポンプ１５を駆動することにより、処理室１１
内が真空排気され、処理室１１内部の真空度は真空計１
４によって検出される。また大気ベント部１３を開放す
ることにより、処理室１１内には大気が導入され真空が
破壊される。蓋部材１０の上部には給気孔１０ａが設け
られており、給気孔１０ａはガス供給部１２に接続され
ている。ガス供給部１２は酸素ガスやフッ素系ガスなど
のプラズマ発生用ガスを供給する。また電極３は高周波
電源部１６と接続されており、高周波電源部１６を駆動
することにより、接地された蓋部材１０と電極３の間に
は高周波電圧が印加される。すなわち蓋部材１０がベー
ス部材２の上面に当接した状態で、真空ポンプ１５を駆
動して排気孔２ｂから真空吸引することにより、処理室
１１内部が真空排気される。この後、蓋部材１０の上面
の給気孔１０ａからプラズマ発生用ガスを供給し、電極
３と蓋部材１０の間に高周波電源部１６によって高周波
電圧を印加することにより、処理室１０ａ内にはプラズ
マ放電が発生し電極３上に載置された基板４のプラズマ
処理が行われる。したがって、真空ポンプ１５、ガス供
給部１２、高周波電源部１６は、処理室１１内でプラズ
マを発生させるプラズマ発生手段となっている。また、
電極３に設けられた内孔３ｂ、３ｃには冷却水循環部１
７が接続されており、冷却水循環部１７を駆動して電極
３内に冷却水を循環させることにより、プラズマ処理時
に電極３を冷却するようになっている。すなわち、冷却
水循環部１７はワーク載置部である電極３を冷却する冷
却手段となっている。このプラズマ処理装置は上記のよ
うに構成されており、以下動作について説明する。ま
ず、基板４を電極３上面に装着されたシート部材５上に
載置される。次いで蓋部材１０を下降させて処理室１１
を閉じる。これにより、基板押さえ１８の当接部材１９
の下端部は基板４の縁部に当接し、基板４をシート部材
５を介して電極３上面に押しつける。これによりシート
部材５が基板４の裏面にならって変形し、基板４の裏面
の凹凸を吸収して密着状態となる。次に真空ポンプ１５
により処理室１１内を真空排気する。次いでガス供給部
１２により処理室１１内にプラズマ発生用ガスを供給し
た状態で、高周波電源部１６を駆動して電極３と蓋部材
１０との間に高周波電圧を印加する。これにより、処理
室１１内にはプラズマが発生し、基板４上面はエッチン
グ処理される。このプラズマ処理により基板４は昇温す
るが、この基板に生じた熱はシート部材５を介して冷却
された電極３に伝達される。このとき、シート部材５は
可撓性に富んだ材質であることから、基板４が熱変形に
よってそりを生じた場合にあっても、シート部材５は基
板４の変形に追従し良好な接触状態を保って常に良好な
熱伝導状態を維持することができる。さらに、シート部
材５の材質として基板表面との付着性を示すタック性に
優れた材質のものを選定すれば、基板４の載置時におい
て一旦当接部材１９によって基板４をシート部材５に押
し付ければ、後は当接部材１９を基板４から離した状態
においても基板４はシート部材５との密着状態を保っ
て、常に良好な伝熱状態を維持することができる。図４
は、薄型の基板４Ａなどを処理対象とする場合において
上述のシート部材５Ｂを用いる例を示している。この場
合には、基板単体では取り扱いが困難であるため、図４
に示すようにキャリア６によって基板４Ａを支持した状
態でプラズマ処理が行われる。この場合には金属製のプ
レート部材で製作されるキャリア６の上面に前述のシー
ト部材５と同様の材質のシート部材５Ｂを介して処理対
象の基板４Ａを載置する。そして、基板４Ａの形状に応
じて配置された当接部材１９によって、基板４Ａの縁部
をシート部材５Ｂを介してキャリア６に押さえ付ける。
これにより、前述のようにシート部材５を電極３上に直
接装着した場合と同様の効果を得ることができる。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a front sectional view of a plasma processing apparatus according to an embodiment of the present invention, FIGS. 2 and 3 are partial perspective views of the plasma processing apparatus, and FIG. 4 is a perspective view of a substrate and a carrier of the plasma processing apparatus. . First, the structure of the plasma processing apparatus will be described with reference to FIG. In FIG. 1, an opening 2 is provided at the center of a base 2 which is a base arranged horizontally.
a is provided in the opening 2a from below.
Are mounted via an insulating member 3a. The upper surface of the electrode 3 serves as a work mounting portion on which the substrate 4 to be processed is mounted. As shown in FIG. 2, a sheet member 5 which is a thermally conductive resin sheet is mounted on the upper surface of the electrode 3. The substrate 4 to be processed is placed on the sheet member 5. The sheet member 5 is made of a material having high heat conductivity and flexibility, such as a silicon resin mixed with a heat conductive material such as graphite or alumina having excellent heat conductivity.
In a state where the substrate 4 is placed on the upper surface, the substrate is easily adhered to the lower surface of the substrate following the deformation or unevenness of the substrate, and is excellent in a property of transmitting the heat of the substrate whose temperature has been increased by the plasma processing to the electrodes. I have. In order to secure good bending characteristics and heat conduction characteristics, the thickness of the sheet member 5 should be set to 0.1.
It is desirable to be in the range of 1 mm to 5 mm. Further, when the sheet member 5 is mounted on the electrode 3, instead of using one continuous sheet member 5, a plurality of divided sheet members 5A as shown in FIG. 3 may be used in combination. Good. Above the base part 2, a lid member 10 is provided so as to be able to move up and down by a raising and lowering means (not shown). When the lid member 10 is lowered, the lower end of the lid member 10 contacts the seal member on the upper surface of the base member 2. As a result, the space enclosed by the electrode 3, the base member 2, and the lid member 10 is hermetically closed, forming a processing chamber 11 that is a closed space for performing plasma processing. On the ceiling surface of the lid member 10, a substrate holder 18 provided with a contact member 19 is vertically disposed. A plurality of substrate holders 18 are provided at positions where the edge of the substrate 4 is pressed, and when the lid member 10 is lowered, the abutting member 19 abuts on the edge of the substrate 4 and intervenes via the sheet member 5. The substrate 4 is pressed against the upper surface of the electrode 3. The substrate holder 18 is provided on the substrate 4 placed on the electrode 3.
Is pressed against the sheet member 5. When the substrate holder 18 presses the substrate 4 against the sheet member 5, the sheet member 5 is deformed, and the contact area between the sheet member 5 and the substrate 4 increases. Exhaust hole 2 in base 2
b is provided, and the air vent 2 b is provided in the exhaust hole 2 b.
3. The vacuum gauge 14 and the vacuum pump 15 are connected. By driving the vacuum pump 15, the processing chamber 11
The inside of the processing chamber 11 is evacuated, and the degree of vacuum inside the processing chamber 11 is measured by a vacuum gauge 1.
4 detected. Further, by opening the atmosphere vent 13, the atmosphere is introduced into the processing chamber 11 and the vacuum is broken. An air supply hole 10 a is provided in an upper portion of the lid member 10, and the air supply hole 10 a is connected to the gas supply unit 12. The gas supply unit 12 supplies a gas for plasma generation such as an oxygen gas or a fluorine-based gas. Further, the electrode 3 is connected to a high-frequency power supply section 16, and by driving the high-frequency power supply section 16, a high-frequency voltage is applied between the lid member 10 and the electrode 3 that are grounded. That is, while the lid member 10 is in contact with the upper surface of the base member 2, the vacuum pump 15 is driven to vacuum-evacuate the exhaust hole 2 b, thereby evacuating the processing chamber 11. Thereafter, a plasma generating gas is supplied from an air supply hole 10 a on the upper surface of the lid member 10, and a high frequency voltage is applied between the electrode 3 and the lid member 10 by a high frequency power supply 16, so that plasma is generated in the processing chamber 10 a. Discharge occurs and plasma processing of the substrate 4 placed on the electrode 3 is performed. Therefore, the vacuum pump 15, the gas supply unit 12, and the high-frequency power supply unit 16 serve as plasma generation means for generating plasma in the processing chamber 11. Also,
Cooling water circulating unit 1 is provided in inner holes 3 b and 3 c provided in electrode 3.
7 is connected, and the cooling water circulating unit 17 is driven to circulate the cooling water in the electrode 3, thereby cooling the electrode 3 during the plasma processing. That is, the cooling water circulating unit 17 is a cooling unit that cools the electrode 3 that is the work placement unit. This plasma processing apparatus is configured as described above, and the operation will be described below. First, the substrate 4 is placed on the sheet member 5 mounted on the upper surface of the electrode 3. Next, the lid member 10 is moved down to
Close. Thereby, the contact member 19 of the substrate holder 18
Abuts against the edge of the substrate 4 and presses the substrate 4 against the upper surface of the electrode 3 via the sheet member 5. As a result, the sheet member 5 is deformed following the back surface of the substrate 4 and absorbs irregularities on the back surface of the substrate 4 to be in a close contact state. Next, the vacuum pump 15
To evacuate the processing chamber 11. Next, the high-frequency power supply 16 is driven to apply a high-frequency voltage between the electrode 3 and the cover member 10 in a state where the plasma generating gas is supplied into the processing chamber 11 by the gas supply unit 12. As a result, plasma is generated in the processing chamber 11, and the upper surface of the substrate 4 is etched. Although the temperature of the substrate 4 is increased by the plasma processing, the heat generated in the substrate is transmitted to the cooled electrode 3 via the sheet member 5. At this time, since the sheet member 5 is made of a highly flexible material, even if the substrate 4 is warped due to thermal deformation, the sheet member 5 follows the deformation of the substrate 4 and has a good contact state. And a good heat conduction state can always be maintained. Furthermore, if the material of the sheet member 5 is selected to be a material having excellent tackiness indicating adhesion to the substrate surface, the substrate 4 is once pressed against the sheet member 5 by the contact member 19 when the substrate 4 is placed. Then, even when the contact member 19 is separated from the substrate 4, the substrate 4 can maintain the close contact state with the sheet member 5 and always maintain a good heat transfer state. FIG.
Shows an example in which the above-described sheet member 5B is used when a thin substrate 4A or the like is to be processed. In this case, since it is difficult to handle the substrate alone, FIG.
The plasma processing is performed in a state where the substrate 4A is supported by the carrier 6 as shown in FIG. In this case, the substrate 4A to be processed is placed on the upper surface of the carrier 6 made of a metal plate member via the sheet member 5B made of the same material as the above-mentioned sheet member 5. Then, the edge of the substrate 4A is pressed against the carrier 6 via the sheet member 5B by the contact member 19 arranged according to the shape of the substrate 4A.
Thereby, the same effect as when the sheet member 5 is directly mounted on the electrode 3 as described above can be obtained.
【発明の効果】本発明によれば、処理対象のワークが載
置されるワーク載置部の表面に熱伝導性の樹脂シートを
装着し、この樹脂シート上に密着状態でワークを載置す
るようにしたので、ワークから電極への良好な熱伝導を
確保して十分な冷却効果を得ることができる。According to the present invention, a thermally conductive resin sheet is mounted on the surface of a work mounting portion on which a work to be processed is mounted, and the work is mounted on the resin sheet in close contact therewith. As a result, good heat conduction from the work to the electrode can be ensured, and a sufficient cooling effect can be obtained.
【図１】本発明の一実施の形態のプラズマ処理装置の正
断面図FIG. 1 is a front sectional view of a plasma processing apparatus according to an embodiment of the present invention.
【図２】本発明の一実施の形態のプラズマ処理装置の部
分斜視図FIG. 2 is a partial perspective view of the plasma processing apparatus according to the embodiment of the present invention;
【図３】本発明の一実施の形態のプラズマ処理装置の部
分斜視図FIG. 3 is a partial perspective view of the plasma processing apparatus according to the embodiment of the present invention;
【図４】本発明の一実施の形態のプラズマ処理装置の基
板およびキャリアの斜視図FIG. 4 is a perspective view of a substrate and a carrier of the plasma processing apparatus according to one embodiment of the present invention.
２ ベース部材 ３ 電極 ４ 基板 ５ シート部材 ６ キャリア １０ 蓋部材 １１ 処理室 １２ ガス供給部 １３ 大気ベント部 １５ 真空ポンプ １６ 高周波電源部 １７ 冷却水循環部 2 Base member 3 Electrode 4 Substrate 5 Sheet member 6 Carrier 10 Lid member 11 Processing chamber 12 Gas supply section 13 Atmospheric vent section 15 Vacuum pump 16 High frequency power supply section 17 Cooling water circulation section
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉田 尚人 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 4G075 AA30 AA46 BA05 BB02 BB03 BC02 CA03 CA47 CA52 EB41 FB12 FC11 5F004 AA16 BB25 BB29 CA04 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Naoto Yoshida 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F-term (reference) 4G075 AA30 AA46 BA05 BB02 BB03 BC02 CA03 CA47 CA52 EB41 FB12 FC11 5F004 AA16 BB25 BB29 CA04
Claims (4)
このワークに対してプラズマ処理を行うプラズマ処理装
置であって、前記密閉空間内に配置され表面に熱伝導性
の樹脂シートが装着されたワーク載置部と、前記密閉空
間内にプラズマを発生させるプラズマ発生手段と、前記
ワーク載置部を冷却する冷却手段とを備えたことを特徴
とするプラズマ処理装置。1. A plasma processing apparatus for placing a work in a depressurized closed space and performing plasma processing on the work, wherein a heat conductive resin sheet is disposed in the closed space and has a surface on which a heat conductive resin sheet is provided. A plasma processing apparatus comprising: a mounted work placement unit; plasma generation means for generating plasma in the closed space; and cooling means for cooling the work placement unit.
することを特徴とする請求項１記載のプラズマ処理装
置。2. The plasma processing apparatus according to claim 1, wherein the heat conductive resin sheet has flexibility.
に付着するタック性を有することを特徴とする請求項１
記載のプラズマ処理装置。3. The heat-conductive resin sheet has tackiness to adhere to a work surface.
The plasma processing apparatus as described in the above.
記樹脂シートに押し付ける押し付け手段を備えたことを
特徴とする請求項１記載のプラズマ処理装置。4. The plasma processing apparatus according to claim 1, further comprising pressing means for pressing a work placed on said work placement portion against said resin sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32402599A JP2001144075A (en) | 1999-11-15 | 1999-11-15 | Plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32402599A JP2001144075A (en) | 1999-11-15 | 1999-11-15 | Plasma treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001144075A true JP2001144075A (en) | 2001-05-25 |
Family
ID=18161319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32402599A Pending JP2001144075A (en) | 1999-11-15 | 1999-11-15 | Plasma treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001144075A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8673781B2 (en) | 2009-10-27 | 2014-03-18 | Sumitomo Precision Products Co., Ltd. | Plasma etching method |
| KR20150125837A (en) * | 2014-04-30 | 2015-11-10 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP2018056532A (en) * | 2016-09-30 | 2018-04-05 | パナソニックＩｐマネジメント株式会社 | Plasma processing device and plasma processing method |
-
1999
- 1999-11-15 JP JP32402599A patent/JP2001144075A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8673781B2 (en) | 2009-10-27 | 2014-03-18 | Sumitomo Precision Products Co., Ltd. | Plasma etching method |
| KR20150125837A (en) * | 2014-04-30 | 2015-11-10 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR101598463B1 (en) | 2014-04-30 | 2016-03-02 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP2018056532A (en) * | 2016-09-30 | 2018-04-05 | パナソニックＩｐマネジメント株式会社 | Plasma processing device and plasma processing method |
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