JP2001135884A - Semiconductor laser apparatus - Google Patents
Semiconductor laser apparatusInfo
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- JP2001135884A JP2001135884A JP31209899A JP31209899A JP2001135884A JP 2001135884 A JP2001135884 A JP 2001135884A JP 31209899 A JP31209899 A JP 31209899A JP 31209899 A JP31209899 A JP 31209899A JP 2001135884 A JP2001135884 A JP 2001135884A
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- Prior art keywords
- wavelength
- film
- laser
- laser element
- semiconductor laser
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、温度変化に依存す
ることなくほぼ一定の光出力を得ることのできる簡易な
構造の半導体レーザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device having a simple structure capable of obtaining a substantially constant light output without depending on a temperature change.
【０００２】[0002]
【関連する背景技術】光インターコネクト等の用途に用
いられる安価な半導体レーザ装置は、通常、レーザ素子
を金属缶等からなるパッケージに封入しただけの簡易な
構造を有して折り、温度変化の影響を受け易い。ちなみ
にレーザ素子の電流対光出力特性は、例えば図４に示す
ような温度依存性を有しており、その光出力は温度上昇
に伴って低下する。またレーザ素子の発振波長も、温度
上昇に伴って長波長化する傾向にある。[Related Background Art] An inexpensive semiconductor laser device used for an optical interconnect or the like usually has a simple structure in which a laser element is simply enclosed in a package made of a metal can or the like, and is folded by an influence of temperature change. Easy to receive. Incidentally, the current vs. light output characteristic of the laser element has, for example, a temperature dependency as shown in FIG. 4, and the light output decreases as the temperature rises. Further, the oscillation wavelength of the laser element also tends to increase as the temperature rises.
【０００３】この点、計測等の用途に用いられる半導体
レーザ装置にあっては、光出力モニタ用の検出器等を組
み込む等して温度補償し、その高性能化や高安定化が図
られている。しかしながら構造が複雑化し、高価格なも
のとなることが否めない。[0003] In this regard, in a semiconductor laser device used for measurement or the like, temperature compensation is performed by incorporating a detector for monitoring an optical output or the like, and its performance and stability are improved. I have. However, it is undeniable that the structure becomes complicated and the price becomes high.
【０００４】[0004]
【発明が解決しようとする課題】ところで特開平２−２
４１０７５号公報には、レーザ素子の光出射端面に反射
率が波長依存性を有する反射膜を設けることで、その発
振波長を安定化することが記載されている。また反射率
が波長依存性を有する反射膜として、ＴiＺrＯ4等の誘
電体多層膜を用いることが開示されている。SUMMARY OF THE INVENTION Incidentally, Japanese Patent Application Laid-Open No. Hei 2-2
Japanese Patent Application Laid-Open No. 41075 discloses that the oscillation wavelength is stabilized by providing a reflective film having a wavelength dependence of reflectivity on a light emitting end face of a laser element. It is also disclosed that a dielectric multilayer film such as TiZrO 4 is used as a reflective film having a wavelength dependence of reflectivity.
【０００５】しかしながらこのような反射膜をレーザ素
子の光出射端面に形成した場合、これによって発振閾値
電流の温度依存性を改善し得るが、例えばその仕様環境
である室温での発振閾値電流Ｉthが高くなり、低温環境
での発振損失Ｐlossが増加する等の、レーザ素子の他の
特性に悪影響が及ぶと言う不具合がある。しかもレーザ
素子自体の電気的・光学的な諸特性（機能）を維持する
上で、反射膜が絶縁性を備えることが必要である等、そ
の膜材料が大きく制限される等の問題もある。However, when such a reflection film is formed on the light emitting end face of the laser element, the temperature dependence of the oscillation threshold current can be improved. For example, the oscillation threshold current Ith at room temperature, which is the specification environment, is reduced. However, there is a problem that other characteristics of the laser element are adversely affected, such as increase in the oscillation loss Ploss in a low temperature environment. In addition, in order to maintain various electrical and optical characteristics (functions) of the laser element itself, there is also a problem that the reflective film needs to have an insulating property, and the film material is greatly limited.
【０００６】本発明はこのような事情を考慮してなされ
たもので、その目的は、レーザ素子の諸特性に影響を与
えることなく、温度変化に依存することのないほぼ一定
の光出力を安定に得ることのできる簡易な構造の半導体
レーザ装置を提供することにある。The present invention has been made in view of such circumstances, and has as its object to stabilize an almost constant optical output that does not depend on a temperature change without affecting various characteristics of a laser element. Another object of the present invention is to provide a semiconductor laser device having a simple structure that can be obtained at a high speed.
【０００７】[0007]
【課題を解決するための手段】上述した目的を達成する
べく本発明に係る半導体レーザ装置は、内部にレーザ素
子を封入したパッケージの上記レーザ素子に対向する部
位に設けられた光出射窓に、反射率または透過率が波長
依存性を有する膜を設けたことを特徴としている。In order to achieve the above-mentioned object, a semiconductor laser device according to the present invention comprises a light emitting window provided at a portion of a package in which a laser element is sealed, the portion being opposed to the laser element. It is characterized in that a film whose reflectance or transmittance has wavelength dependence is provided.
【０００８】即ち、本発明は、反射率または透過率が波
長依存性を有する膜を、レーザ素子の光出射端面ではな
く、該レーザ素子を内部に封入したパッケージの光出射
窓に設けることで、レーザ素子の諸特性に影響を与える
ことなく、該レーザ素子から出力されたレーザ光の光学
的特性、特にその光出力の安定化を図った半導体レーザ
装置を提供するものである。That is, the present invention provides a film whose reflectance or transmittance has wavelength dependence on the light emission window of a package in which the laser element is sealed, instead of the light emission end face of the laser element. An object of the present invention is to provide a semiconductor laser device which stabilizes optical characteristics of a laser beam output from a laser element without affecting the characteristics of the laser element, particularly stabilizing the light output.
【０００９】好ましくは反射率が波長依存性を有する膜
としては、請求項２に記載するように所定の波長領域に
おいて波長が長くなるに従って反射率が低下するレーザ
光反射膜が用いられる。また透過率が波長依存性を有す
る膜としては、請求項３に記載するように所定の波長領
域において波長が長くなるに従って透過率が高くなるレ
ーザ光透過膜が用いられる。Preferably, as the film whose reflectivity has a wavelength dependence, a laser light reflecting film whose reflectivity decreases as the wavelength becomes longer in a predetermined wavelength region is used. Further, as the film whose transmittance has a wavelength dependency, a laser beam transmitting film whose transmittance increases as the wavelength becomes longer in a predetermined wavelength region is used as described in claim 3.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照して本発明の一
実施形態に係る半導体レーザ装置について説明する。図
１はこの実施形態に係る半導体レーザ装置の概略構成を
示す図で、１はレーザ素子、２は金属缶からなるパッケ
ージである。レーザ素子１は、例えば発振波長が８５０
ｎｍ帯の面発光レーザからなり、その上面の光出射面を
上方に向けてパッケージ２のステム２１上にＳiヒート
シンク２２を介してマウントされ、ステム２１を挿通し
て設けられたリード２３に電極接続される。ステム２１
上に設けられるキャップ２４は、上記レーザ素子１をそ
の内部に封入するものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor laser device according to one embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a semiconductor laser device according to this embodiment, wherein 1 is a laser element, and 2 is a package made of a metal can. The laser element 1 has, for example, an oscillation wavelength of 850.
a surface emitting laser in the nm band, mounted on the stem 21 of the package 2 via the Si heat sink 22 with the light emitting surface of the upper surface facing upward, and connected to a lead 23 provided through the stem 21. Is done. Stem 21
The cap 24 provided above encapsulates the laser element 1 therein.
【００１１】しかしてキャップ２４の上記レーザ素子１
の光出射面に対向する部位には光出射窓２５が形成され
ている。この光出射窓２５は、例えばキャップ２４の開
口部を覆うガラス等のレーザ光に対して透明な部材から
なり、その表面には反射率が波長依存性を有する反射膜
２６、具体的には図２(ａ)に示すように所定の波長領域
（８５０ｎｍ帯）において、波長が長くなるに従って反
射率が低下するレーザ光反射膜２６が形成されている。
尚、上記の如く反射率が波長依存性を有する反射膜２６
自体を、光出射窓２５として用いることも勿論可能であ
る。The laser element 1 of the cap 24
A light exit window 25 is formed at a portion facing the light exit surface. The light exit window 25 is made of a member transparent to laser light, such as glass, which covers the opening of the cap 24, and has a reflective film 26 whose reflectance has wavelength dependence on its surface. As shown in FIG. 2A, in a predetermined wavelength region (850 nm band), a laser light reflection film 26 whose reflectance decreases as the wavelength becomes longer is formed.
In addition, as described above, the reflection film 26 whose reflectance depends on the wavelength is used.
Of course, it is of course possible to use the light emitting window 25 itself.
【００１２】反射率が波長依存性を有する反射膜２６
（光出射窓２５）は、例えばＳiＯ2／ａ-Ｓi／ＳiＯ2／
ＳiＯ2／ａ-Ｓi／ＳiＯ2／ａ-Ｓiからなる７層の誘電体
多層膜からなる。この誘電体多層膜における各層の膜厚
は、レーザ素子１が発振出力するレーザ光の波長をλ、
各層における屈折率をｎとしたとき、それぞれ［λ／４
ｎ］となるように設定される。Reflective film 26 whose reflectivity has wavelength dependence
The (light exit window 25) is, for example, SiO 2 / a-Si / SiO 2 /
It is composed of seven dielectric multilayer films composed of SiO 2 / a-Si / SiO 2 / a-Si. The film thickness of each layer in the dielectric multilayer film is λ, the wavelength of the laser light oscillated and output by the laser element 1.
When the refractive index in each layer is n, [λ / 4
n].
【００１３】尚、上述した反射率が波長依存性を有する
反射膜２６に代えて、透過率が波長依存性を有する透過
膜、具体的には図２(ｂ)に示すように、所定の波長領域
（８５０ｎｍ帯）において波長が長くなるに従って透過
率が高くなるレーザ光透過膜を光出射窓２５に設けるよ
うにしても良い。ちなみにこのようなレーザ光透過膜に
おける透過率が、当該レーザ光透過膜における反射率と
の和が一定となる条件下で変化するものであれば、この
レーザ光透過膜は前述したレーザ光反射膜２６と実質的
に同じ光学的性質を持つことになる。It is to be noted that, instead of the above-mentioned reflective film 26 whose reflectance has wavelength dependence, a transmission film whose transmittance has wavelength dependence, specifically, as shown in FIG. A laser light transmitting film whose transmittance increases as the wavelength increases in the region (850 nm band) may be provided in the light exit window 25. Incidentally, if the transmittance of such a laser light transmitting film changes under the condition that the sum of the reflectance and the reflectance of the laser light transmitting film is constant, the laser light transmitting film is the laser light reflecting film described above. 26 will have substantially the same optical properties.
【００１４】かくして上述したように、反射率が波長依
存性を有する反射膜２６、または透過率が波長依存性を
有する透過膜をパッケージ２の光出射窓２５に設けた構
造の半導体レーザ装置によれば、レーザ素子１の温度に
依存した光出力の変化を、光出射窓２５における反射特
性（透過特性）にて相殺することができるので、簡易に
して効果的にその光出力をほぼ一定に保つことが可能と
なる。即ち、パッケージ２に封入されたレーザ素子１が
発振出力するレーザ光の電流対光出力特性が図４に示す
如き温度依存性を有し、温度上昇に伴って発振波長を長
くしながら、その光出力を低下させる特性を示す場合で
あっても、パッケージ２の光出射窓２５に設けられた反
射膜（透過膜）２６が図２(ａ)(ｂ)に示すように、発振
波長が長くなるに伴って反射率が低下する（透過率が上
昇する）波長依存性を有しているので、光出射窓２５を
パッケージ２の外部に介して取り出されるレーザ光の出
力を、その発振波長に拘わらず、ひいては温度変化に拘
わることなく図３に特性Ａとして示すようにほぼ一定に
保つことが可能となる。尚、図３に示す特性Ｂはレーザ
素子１の温度に依存した光出力の変化特性を示してい
る。As described above, according to the semiconductor laser device having the structure in which the reflection film 26 whose reflectance has wavelength dependence or the transmission film whose transmittance has wavelength dependence is provided in the light exit window 25 of the package 2. For example, a change in the optical output depending on the temperature of the laser element 1 can be offset by the reflection characteristic (transmission characteristic) in the light exit window 25, so that the optical output can be simply and effectively kept substantially constant. It becomes possible. That is, the current vs. light output characteristics of the laser light oscillated and output by the laser element 1 enclosed in the package 2 has a temperature dependence as shown in FIG. Even in the case of exhibiting the characteristic of lowering the output, the reflection film (transmission film) 26 provided in the light exit window 25 of the package 2 has a longer oscillation wavelength as shown in FIGS. Has a wavelength dependence in which the reflectance decreases (transmittance increases) as a result, the output of the laser light taken out through the light exit window 25 outside the package 2 is controlled regardless of the oscillation wavelength. In addition, it is possible to keep substantially constant as shown by the characteristic A in FIG. Note that a characteristic B shown in FIG. 3 indicates a change characteristic of the optical output depending on the temperature of the laser element 1.
【００１５】しかも上述した反射膜（透過膜）２６はレ
ーザ素子１の光出射端面ではなく、パッケージ２の光出
射窓２５に設けられるので、該反射膜（透過膜）２６の
存在によってレーザ素子１自体の電気的・光学的特性が
左右されることがない。例えば反射膜（透過膜）２６を
レーザ素子１の光出射端面に設けた場合のように、レー
ザ素子１の室温における発振閾値電流Ｉthが高くなり、
この結果、低温環境での発振損失が増加する等の不具合
を招来することがない。Further, since the above-mentioned reflection film (transmission film) 26 is provided not on the light emission end face of the laser element 1 but on the light emission window 25 of the package 2, the presence of the reflection film (transmission film) 26 causes the laser element 1 to emit light. The electrical and optical characteristics of itself are not affected. For example, as in the case where the reflection film (transmission film) 26 is provided on the light emitting end face of the laser element 1, the oscillation threshold current Ith of the laser element 1 at room temperature increases,
As a result, problems such as an increase in oscillation loss in a low-temperature environment do not occur.
【００１６】また反射膜（透過膜）２６はパッケージ２
の光出射窓２５に設けられるので、レーザ素子１の光出
射端面に設ける場合のように、その膜材料に制約を受け
ることもない。従って波長依存性を有する反射膜（透過
膜）２６として、前述した誘電体多層膜のみならず、金
属膜等の種々の膜材料を適宜採用可能である。具体的に
は、Ａl2Ｏ3,ＭgＯ,ＴiＯ2,ＭgＦ,ＳiＮx等の誘電体膜
を用いてもよく、或いはＡu,Ａg,Ｔi,Ｃr,Ａl,Ｓn,Ｃu
等の金属膜を反射膜（透過膜）２６として用いることが
可能である。更には誘電体膜を用いるに際しては、屈折
率の異なる材料を組み合わせて用い、例えばバンドパス
フィルタのような多層膜構造を有する反射膜（透過膜）
２６を実現するようにしても良い。The reflection film (transmission film) 26 is
Is provided in the light exit window 25 of the laser element 1, so that the film material is not restricted as in the case of being provided on the light exit end face of the laser element 1. Therefore, as the reflection film (transmission film) 26 having wavelength dependency, not only the above-described dielectric multilayer film but also various film materials such as a metal film can be appropriately used. Specifically, a dielectric film such as Al 2 O 3 , MgO, TiO 2 , MgF, SiNx may be used, or Au, Ag, Ti, Cr, Al, Sn, Cu may be used.
It is possible to use such a metal film as the reflection film (transmission film) 26. Further, when a dielectric film is used, a combination of materials having different refractive indices is used, for example, a reflective film (transmission film) having a multilayer structure such as a band-pass filter.
26 may be realized.
【００１７】更には上述した波長依存性を有する反射膜
（透過膜）２６をパッケージ２の光出射窓２５に設ける
だけで良いので、半導体レーザ装置としての構造が簡単
であり、さほどコスト高になることもない。しかも光出
力モニタ用の検出器を組み込んで温度補償する必要もな
いので、光インターコネクト等の用途に用いられる安価
な半導体レーザ装置として好適である等の利点がある。Further, since it is only necessary to provide the reflection film (transmission film) 26 having the above-mentioned wavelength dependency on the light exit window 25 of the package 2, the structure as the semiconductor laser device is simple, and the cost is much higher. Not even. Moreover, since there is no need to incorporate a detector for monitoring the optical output to compensate for the temperature, there are advantages such as being suitable as an inexpensive semiconductor laser device used for applications such as optical interconnects.
【００１８】尚、本発明は上述した実施形態に限定され
るものではない。例えばレーザ素子１として面発光型の
もののみならず、埋め込み構造型のレーザ素子を用いる
ことも勿論可能である。またレーザ素子１の発振波長や
その光出力も、その用途や仕様に応じたものであれば良
い。更にはパッケージ２の構造自体も特に限定されない
ことは言うまでもない。要はレーザ素子１の温度依存性
に応じて、その透過率（反射率）が発振波長に対して変
化する透過膜（反射膜）２６をパッケージ２の光射出窓
２５に設け、これによって温度変化に依存するレーザ光
出力の変化を相殺するようにすれば良く、その要旨を逸
脱しない範囲で種々変形して実施することができる。The present invention is not limited to the above embodiment. For example, not only a surface emitting type laser device but also a buried structure type laser device can be used as the laser device 1. In addition, the oscillation wavelength of the laser element 1 and the optical output thereof may be any as long as they correspond to the application and specifications. Needless to say, the structure of the package 2 is not particularly limited. The point is that a transmission film (reflection film) 26 whose transmittance (reflectance) changes with respect to the oscillation wavelength in accordance with the temperature dependency of the laser element 1 is provided in the light exit window 25 of the package 2, whereby the temperature change The change in the laser light output depending on the above may be canceled out, and various modifications can be made without departing from the scope of the invention.
【００１９】[0019]
【発明の効果】以上説明したように本発明によれば、温
度変化に拘わることなく、簡易にして効果的にレーザ光
出力をほぼ一定に保つことができるので、光インターコ
ネクト等の用途に用いられる安価で簡易な構成の半導体
レーザ装置として好適である等の利点が奏せられる。As described above, according to the present invention, it is possible to easily and effectively keep the laser light output substantially constant without being affected by temperature changes, and therefore, it is used for applications such as optical interconnects. Advantages such as being suitable as a semiconductor laser device having an inexpensive and simple configuration can be obtained.
【図１】本発明の一実施形態に係る半導体レーザ装置の
概略構成図。FIG. 1 is a schematic configuration diagram of a semiconductor laser device according to an embodiment of the present invention.
【図２】図１に示す半導体レーザ装置の光射出窓に設け
られる透過膜および反射膜の波長依存性を示す特性図。FIG. 2 is a characteristic diagram showing wavelength dependence of a transmission film and a reflection film provided in a light exit window of the semiconductor laser device shown in FIG.
【図３】図１に示す半導体レーザ装置の温度変化に対す
る光出力特性を示す図。FIG. 3 is a diagram showing light output characteristics of the semiconductor laser device shown in FIG. 1 with respect to a temperature change.
【図４】レーザ素子の電流対光出力特性を示す図。FIG. 4 is a view showing current versus light output characteristics of a laser element.
１ レーザ素子 ２ パッケージ ２５ 光射出窓 ２６ 波長依存性を有する透過膜（反射膜） DESCRIPTION OF SYMBOLS 1 Laser element 2 Package 25 Light emission window 26 Wavelength dependent transmission film (reflection film)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 横内 則之 東京都千代田区丸の内２丁目６番１号 古 河電気工業株式会社内 (72)発明者 粕川 秋彦 東京都千代田区丸の内２丁目６番１号 古 河電気工業株式会社内 Ｆターム(参考） 5F073 AB16 AB25 EA15 FA13 FA30 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Noriyuki Yokouchi 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Akihiko Kasukawa 2-6-1 Marunouchi, Chiyoda-ku, Tokyo No. F-term in Furukawa Electric Co., Ltd. (reference) 5F073 AB16 AB25 EA15 FA13 FA30
Claims (3)
の上記レーザ素子に対向する部位に設けられた光出射窓
に、反射率または透過率が波長依存性を有する膜を設け
たことを特徴とする半導体レーザ装置。1. A light emitting window provided at a portion facing a laser element of a package in which a laser element is sealed therein, wherein a film having a wavelength dependence of a reflectance or a transmittance is provided. Semiconductor laser device.
所定の波長領域において波長が長くなるに従って反射率
が低下するレーザ光反射膜からなることを特徴とする請
求項１に記載の半導体レーザ装置。2. The film, wherein the reflectance has a wavelength dependency,
2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device comprises a laser light reflecting film whose reflectance decreases as the wavelength increases in a predetermined wavelength region.
所定の波長領域において波長が長くなるに従って透過率
が高くなるレーザ光透過膜からなることを特徴とする請
求項１に記載の半導体レーザ装置。3. The film whose transmittance has wavelength dependence,
2. The semiconductor laser device according to claim 1, comprising a laser light transmitting film whose transmittance increases as the wavelength increases in a predetermined wavelength region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31209899A JP2001135884A (en) | 1999-11-02 | 1999-11-02 | Semiconductor laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31209899A JP2001135884A (en) | 1999-11-02 | 1999-11-02 | Semiconductor laser apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001135884A true JP2001135884A (en) | 2001-05-18 |
Family
ID=18025226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31209899A Pending JP2001135884A (en) | 1999-11-02 | 1999-11-02 | Semiconductor laser apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001135884A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103576A (en) * | 2005-10-03 | 2007-04-19 | Furukawa Electric Co Ltd:The | Surface light emitting laser module |
| JP2009146991A (en) * | 2007-12-12 | 2009-07-02 | Nippon Telegr & Teleph Corp <Ntt> | Optical signal generator |
-
1999
- 1999-11-02 JP JP31209899A patent/JP2001135884A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103576A (en) * | 2005-10-03 | 2007-04-19 | Furukawa Electric Co Ltd:The | Surface light emitting laser module |
| JP2009146991A (en) * | 2007-12-12 | 2009-07-02 | Nippon Telegr & Teleph Corp <Ntt> | Optical signal generator |
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