JP2001110232A - Conductive paste and semiconductor ceramic electronic parts - Google Patents
Conductive paste and semiconductor ceramic electronic partsInfo
- Publication number
- JP2001110232A JP2001110232A JP29123199A JP29123199A JP2001110232A JP 2001110232 A JP2001110232 A JP 2001110232A JP 29123199 A JP29123199 A JP 29123199A JP 29123199 A JP29123199 A JP 29123199A JP 2001110232 A JP2001110232 A JP 2001110232A
- Authority
- JP
- Japan
- Prior art keywords
- conductive paste
- external electrode
- glass frit
- conductive
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体セラミック
電子部品のオーミック電極形成に用いる導電性ペース
ト、およびそれを用いた半導体セラミック電子部品に関
する。The present invention relates to a conductive paste for forming an ohmic electrode of a semiconductor ceramic electronic component, and a semiconductor ceramic electronic component using the same.
【０００２】[0002]
【従来の技術】また、従来より半導体セラミック電子部
品は、主にセラミック素子と外部電極とからなり、例え
ばセラミック素子は、チタン酸バリウム系、チタン酸ス
トロンチウム系、酸化亜鉛系、酸化鉄系セラミック材料
からなる。2. Description of the Related Art Conventionally, a semiconductor ceramic electronic component mainly comprises a ceramic element and an external electrode. For example, the ceramic element is made of a barium titanate-based, strontium titanate-based, zinc oxide-based, iron oxide-based ceramic material. Consists of
【０００３】外部電極は、亜鉛，アルミニウム，ニッケ
ル等の卑金属元素の金属粉末に低融点の硼ケイ酸鉛系ガ
ラスフリットやホウケイ酸亜鉛系ガラスフリットを添
加、あるいは銀粉を主成分として亜鉛，ガリウム，イン
ジウムを添加した導電性ペーストを、セラミック素子の
両端部に塗布し焼付けして、無電解ニッケルメッキ等を
施したものがある。なお、セラミック素子は外部電極と
オーミック接触している。[0003] The external electrode is made by adding a low melting point lead borosilicate glass frit or a zinc borosilicate glass frit to a metal powder of a base metal element such as zinc, aluminum, nickel or the like, or zinc, gallium, and zinc as main components. In some cases, a conductive paste containing indium is applied to both ends of a ceramic element, baked, and subjected to electroless nickel plating or the like. Note that the ceramic element is in ohmic contact with the external electrode.
【０００４】[0004]
【発明が解決しようとする課題】亜鉛，アルミニウム，
ニッケル等の卑金属元素の粉末を導電成分とする導電性
ペーストは、これを焼成して得られる外部電極とセラミ
ック素子とのオーミック接触性は良好であるが半田濡れ
性が悪く、端子を半田付けで取り付けるタイプの半導体
セラミック電子部品の外部電極として使用できない問題
点がある。SUMMARY OF THE INVENTION Zinc, aluminum,
A conductive paste containing a powder of a base metal element such as nickel as a conductive component has good ohmic contact between an external electrode obtained by firing the powder and a ceramic element, but has poor solder wettability. There is a problem that it cannot be used as an external electrode of a mounting type semiconductor ceramic electronic component.
【０００５】また、銀粉を主成分とし亜鉛，ガリウム，
インジウムを添加した導電性ペーストは、焼成して得ら
れる外部電極とセラミック素子とのオーミック接触性お
よび半田濡れ性は良好であるが、セラミック素子２に高
電圧を印加した場合に、外部電極の正極から負極へ銀が
移動する、いわゆるマイグレーション現象が起きるとい
う問題点がある。In addition, zinc, gallium,
The conductive paste containing indium has good ohmic contact and solder wettability between the external electrode obtained by firing and the ceramic element, but the positive electrode of the external electrode when a high voltage is applied to the ceramic element 2. There is a problem that so-called migration phenomenon occurs in which silver moves from the anode to the negative electrode.
【０００６】本発明の目的は、上述の問題点を解消すべ
くなされたもので、セラミック素子とオーミック接触
し、半田濡れ性に優れ、マイグレーション現象が発生し
ない外部電極を形成できる導電性ペーストを提供し、ま
た、この導電性ペーストを用いて外部電極を形成した半
導体セラミック電子部品を提供することにある。An object of the present invention is to solve the above-mentioned problems, and to provide a conductive paste capable of forming an external electrode which is in ohmic contact with a ceramic element, has excellent solder wettability, and does not cause migration phenomenon. Another object of the present invention is to provide a semiconductor ceramic electronic component in which an external electrode is formed using the conductive paste.
【０００７】[0007]
【課題を解決するための手段】本発明の導電性ペースト
は、導電性粉末と、ガラスフリットと、を主成分とし、
前記導電性粉末は銅錫燐合金からなり、前記ガラスフリ
ットはホウケイ酸ビスマス系ガラス、ホウケイ酸亜鉛系
ガラス、ホウ酸塩系ガラスから選ばれる１種からなり、
前記ガラスフリットの添加量は、前記導電性粉末１００
体積％に対して３体積％以上４０体積％未満であること
を特徴とする。Means for Solving the Problems The conductive paste of the present invention comprises a conductive powder and a glass frit as main components,
The conductive powder is made of a copper-tin-phosphorus alloy, and the glass frit is made of one selected from bismuth borosilicate glass, zinc borosilicate glass, and borate glass,
The amount of the glass frit added is 100
It is characterized by being at least 3% by volume and less than 40% by volume with respect to% by volume.
【０００８】また、本発明の半導体セラミック電子部品
は、セラミック素体と、外部電極と、からなり、外部電
極は、請求項１または請求項２に記載の導電性ペースト
をセラミック素体の両端部に塗布し乾燥させ焼付けて形
成されていることを特徴とする。Further, a semiconductor ceramic electronic component according to the present invention comprises a ceramic body and an external electrode, wherein the external electrode is formed by applying the conductive paste according to claim 1 or 2 to both ends of the ceramic body. , Dried and baked.
【０００９】[0009]
【発明の実施の形態】本発明に係る導電性ペーストにつ
いて詳細に説明する。本発明の導電性ペーストは、導電
性粉末とガラスフリットを主成分とする。導電性粉末
は、例えばアトマイズ法等で作製された銅錫燐合金から
なる。導電性粉末が銅粉末単独からなる場合、初期抵抗
値Ｒ25は無限大となる。また、錫粉末単独からなる場
合、焼成温度で電極を形成することができない。また、
燐粉末単独からなる場合、発火の恐れがあり実用的では
ない。銅錫合金からなる場合、初期抵抗値Ｒ25は１００
０Ω前後となりセラミック素体とオーミック接触しな
い。BEST MODE FOR CARRYING OUT THE INVENTION The conductive paste according to the present invention will be described in detail. The conductive paste of the present invention contains conductive powder and glass frit as main components. The conductive powder is made of, for example, a copper-tin-phosphorus alloy produced by an atomizing method or the like. When the conductive powder is made of copper powder alone, the initial resistance value R 25 becomes infinite. In the case of using only tin powder, electrodes cannot be formed at the firing temperature. Also,
When the phosphor powder is used alone, there is a risk of ignition, which is not practical. When made of a copper-tin alloy, the initial resistance value R 25 is 100
It is around 0Ω and does not make ohmic contact with the ceramic body.
【００１０】ガラスフリットは、チタン酸バリウム系、
チタン酸ストロンチウム系等のペロブスカイト型半導体
セラミック、酸化亜鉛系半導体セラミック、酸化鉄系半
導体セラミック等と良好なガラスボンドが得られ、銅錫
燐合金に対して濡れ性の優れるものを適宜選択すること
ができ、例えば、低融点のホウケイ酸ビスマス系ガラ
ス、ホウケイ酸亜鉛系ガラス、ホウ酸塩ガラス等が挙げ
られる。The glass frit is made of barium titanate,
A good glass bond can be obtained with a perovskite-type semiconductor ceramic such as strontium titanate, a zinc oxide-based semiconductor ceramic, an iron oxide-based semiconductor ceramic, or the like. Examples thereof include low melting point bismuth borosilicate glass, zinc borosilicate glass, and borate glass.
【００１１】導電性粉末に対するガラスフリットの添加
量は３体積％以上４０体積％未満であることが好まし
い。前記体積比が４０％以上となると、焼成して得られ
る外部電極の表面にガラスが析出して半田濡れ性が悪く
なる。他方、前記体積比が３％より小さくなると、セラ
ミック素子２とのガラスボンドができず外部電極を形成
できないか、あるいは初期抵抗値が高く、得られた外部
電極３，３がセラミック素子２とオーミック接触しな
い。The amount of glass frit added to the conductive powder is preferably at least 3% by volume and less than 40% by volume. When the volume ratio is 40% or more, glass is deposited on the surface of the external electrode obtained by firing, and the solder wettability deteriorates. On the other hand, if the volume ratio is less than 3%, glass bonding with the ceramic element 2 cannot be performed and an external electrode cannot be formed, or the initial resistance value is high, and the obtained external electrodes 3 and 3 are in ohmic contact with the ceramic element 2. Do not touch.
【００１２】こうして得られた導電性ペーストをセラミ
ック素子２に塗布し、セラミック素子２を還元しない雰
囲気において５００〜８００℃で焼成すると、セラミッ
ク素子２とオーミック接触する外部電極３，３が得られ
る。When the conductive paste thus obtained is applied to the ceramic element 2 and fired at 500 to 800 ° C. in an atmosphere in which the ceramic element 2 is not reduced, the external electrodes 3 and 3 in ohmic contact with the ceramic element 2 are obtained.
【００１３】なお、セラミック素子を還元しない雰囲気
とは、酸素濃度が最低１５０ｐｐｍであることが好まし
い。酸素濃度が１５０ｐｐｍより低くなると、半導体セ
ラミック電子部品が正特性サーミスタである場合、図２
に示すように抵抗温度特性を示さなくなる。また、大気
雰囲気において焼成すると、図３に示すように酸化して
比抵抗が高くなる。The atmosphere in which the ceramic element is not reduced preferably has an oxygen concentration of at least 150 ppm. When the oxygen concentration is lower than 150 ppm, when the semiconductor ceramic electronic component is a positive temperature coefficient thermistor, FIG.
As shown in FIG. Further, when sintering is performed in an air atmosphere, oxidation occurs as shown in FIG. 3 to increase the specific resistance.
【００１４】次に、本発明に係る半導体セラミック電子
部品の一つの実施形態について、図１に基づいて詳細に
説明する。半導体セラミック電子部品１は、セラミック
素子２と、外部電極３，３からなる。セラミック素子２
は、チタン酸バリウム系、チタン酸ストロンチウム系等
のペロブスカイト型半導体セラミック、酸化亜鉛系半導
体セラミック、酸化鉄系半導体セラミック等からなる。
外部電極３，３は、セラミック素子２の両主面に形成さ
れている。この外部電極３，３は、本発明の導電性ペー
ストをセラミック素子２の両主面に塗布し焼付けして得
られる。Next, one embodiment of a semiconductor ceramic electronic component according to the present invention will be described in detail with reference to FIG. The semiconductor ceramic electronic component 1 includes a ceramic element 2 and external electrodes 3 and 3. Ceramic element 2
Is made of a perovskite semiconductor ceramic such as barium titanate or strontium titanate, a zinc oxide semiconductor ceramic, an iron oxide semiconductor ceramic, or the like.
The external electrodes 3 are formed on both main surfaces of the ceramic element 2. The external electrodes 3 and 3 are obtained by applying and baking the conductive paste of the present invention to both main surfaces of the ceramic element 2.
【００１５】[0015]
【実施例】まず、チタン酸バリウムを主成分とする正特
性サーミスタ材料を直径１３ｍｍの円板状に成形したセ
ラミック素子２を用意した。EXAMPLE First, a ceramic element 2 was prepared by molding a positive temperature coefficient thermistor material containing barium titanate as a main component into a disk shape having a diameter of 13 mm.
【００１６】次に、銅８６．９５体積％，錫１３．００
体積％，燐０．０５体積％からなる平均粒径が５μｍの
銅錫燐合金を作製した。平均粒径が５μｍのＢ−Ｓｉ−
Ｂｉ−Ｏガラスフリット，Ｂ−Ｓｉ−Ｚｎ−Ｏガラスフ
リット，Ｂ−Ｂｉ−Ｚｎ−Ｏガラスフリットをそれぞれ
ガラスフリットＡ，Ｂ，Ｃとし、これを用意した。エチ
ルセルロースをα−テルピネオールに溶解した有機ビヒ
クルを用意した。Next, 86.95% by volume of copper and 13.00% of tin.
A copper-tin-phosphorus alloy having an average particle size of 5 μm, which was composed of 0.5% by volume and 0.05% by volume of phosphorus, was produced. B-Si- having an average particle size of 5 μm
Bi-O glass frit, B-Si-Zn-O glass frit, and B-Bi-Zn-O glass frit were designated as glass frits A, B, and C, respectively, and were prepared. An organic vehicle in which ethyl cellulose was dissolved in α-terpineol was prepared.
【００１７】次に、銅錫燐合金からなる導電性粉末と前
記ガラスフリットＡ，Ｂ，Ｃをそれぞれ表１に示す添加
量で混合して電極材料を得、この電極材料７０重量％と
前記有機ビヒクル３０重量％を混合し３本ロールで混練
し分散して、実施例１〜１４の導電性ペーストを得た。
次に、実施例１〜１４の導電性ペーストを、セラミック
素子の両主面に膜厚が１０μｍ〜３０μｍとなるように
スクリーン印刷法を用いて塗布し、酸素濃度３５０ｐｐ
ｍの雰囲気で６００℃で１０分間焼成して、実施例１〜
１４の外部電極を得た。Next, an electrode material was obtained by mixing a conductive powder made of a copper-tin-phosphorus alloy and the above glass frit A, B, and C in the amounts shown in Table 1, respectively, to obtain an electrode material. 30% by weight of the vehicle was mixed, kneaded with three rolls and dispersed to obtain conductive pastes of Examples 1 to 14.
Next, the conductive pastes of Examples 1 to 14 were applied to both main surfaces of the ceramic element by a screen printing method so as to have a film thickness of 10 μm to 30 μm, and the oxygen concentration was 350 pp.
m for 10 minutes in an atmosphere of m.
Fourteen external electrodes were obtained.
【００１８】次に、本発明の実施例に対する比較例とし
て、前記セラミック素子２の両主面にインジウム-ガリ
ウム合金を塗布し焼付けして、比較例１の外部電極を得
た。Next, as a comparative example to the embodiment of the present invention, an indium-gallium alloy was applied to both main surfaces of the ceramic element 2 and baked to obtain an external electrode of Comparative Example 1.
【００１９】次に、銀粉末８３．３３重量％、亜鉛粉末
１６．６７重量％を混合した導電性粉末と、前記ガラス
フリットＡ，Ｂ，Ｃをそれぞれ表１に示す添加割合で混
合して電極材料を得、この電極材料７０重量％と前記有
機ビヒクル３０重量％を混合し、３本ロールで混練し分
散して、比較例２〜５の導電性ペーストを得た。同様
に、亜鉛粉末７７体積％とガラスフリットＡ２３体積％
を混合して電極材料を得、この電極材料７０重量％と前
記有機ビヒクル３０重量％を混合し、３本ロールで混練
し分散して、比較例６の導電性ペーストを得た。次に、
比較例２〜６の導電性ペーストを、セラミック素子の両
主面に膜厚が１０μｍ〜３０μｍとなるようにスクリー
ン印刷法を用いて塗布し、大気中で５００℃で１０分間
焼成して、比較例２〜６の外部電極を得た。Next, a conductive powder in which 83.33% by weight of silver powder and 16.67% by weight of zinc powder were mixed, and the above glass frit A, B, and C were mixed in the addition ratios shown in Table 1 to form an electrode. A material was obtained, and 70% by weight of this electrode material and 30% by weight of the organic vehicle were mixed, kneaded and dispersed with a three-roll mill to obtain conductive pastes of Comparative Examples 2 to 5. Similarly, 77% by volume of zinc powder and 23% by volume of glass frit A
Was mixed to obtain an electrode material. 70% by weight of the electrode material and 30% by weight of the organic vehicle were mixed, kneaded and dispersed with a three-roll mill, and a conductive paste of Comparative Example 6 was obtained. next,
The conductive pastes of Comparative Examples 2 to 6 were applied to both main surfaces of the ceramic element using a screen printing method so that the film thickness became 10 μm to 30 μm, and baked at 500 ° C. for 10 minutes in the air. The external electrodes of Examples 2 to 6 were obtained.
【００２０】こうして得られた実施例１〜１４及び比較
例２〜６について、導電性粉末の種類、ガラスフリット
の種類及び導電性粉末に対するガラスフリットの添加割
合、初期抵抗値Ｒ25、半田濡れ性、湿中負荷寿命試験に
基づくＲ変化率およびマイグレーション現象個数、塩酸
雰囲気試験に基づくマイグレーション現象個数を表１に
まとめた。なお、比較例１については、初期抵抗値Ｒ25
のみ測定し、これを表１に示した。With respect to the thus obtained Examples 1 to 14 and Comparative Examples 2 to 6, the kind of the conductive powder, the kind of the glass frit, the addition ratio of the glass frit to the conductive powder, the initial resistance value R 25 , the solder wettability Table 1 summarizes the rate of change of R and the number of migration phenomena based on the humidity / medium load life test, and the number of migration phenomena based on the hydrochloric acid atmosphere test. Note that, for Comparative Example 1, the initial resistance value R 25
Only, and are shown in Table 1.
【００２１】初期抵抗値Ｒ25は、２５℃における外部電
極３，３間の抵抗値Ｒ25をデジタルボルトメータで測定
した。The initial resistance value R 25 was obtained by measuring the resistance value R 25 between the external electrodes 3 and 3 at 25 ° C. using a digital voltmeter.
【００２２】半田濡れ性はＳｎ／Ｐｂ半田を用いて浸漬
法により評価した。半田濡れ性の評価条件は、温度を２
３０±５℃、時間を４±１秒とし、実施例１〜１４及び
比較例２〜６の外部電極それぞれ１０個ずつについて、
外部電極が半田で９０％以上カバーされていれば良好と
し、それ未満のものは不良とした。The solder wettability was evaluated by an immersion method using Sn / Pb solder. The evaluation condition for solder wettability was that the temperature was 2
30 ± 5 ° C., the time was set to 4 ± 1 second, and for each of the 10 external electrodes of Examples 1 to 14 and Comparative Examples 2 to 6,
If the external electrode was covered by 90% or more of the solder, it was judged as good, and if less than that, it was judged as defective.
【００２３】湿中負荷寿命試験は、図４に示す回路を用
いて、周囲の温度４０±２℃、湿度９０〜９５％中にお
いて、ＡＣ１８０Ｖ、Ｒ1＝１０Ω、３０ｍｉｎＯＮ−
９０ｍｉｎＯＦＦのサイクルを１０００ｈｒ繰り返し
て、１０００ｈｒ後の初期の抵抗値に対するＲ25の変化
率％と、セラミック素子２側面においてマイグレーショ
ン現象の発生した不良個数を調べた。The humidity / medium load life test is performed by using a circuit shown in FIG. 4 at an ambient temperature of 40 ± 2 ° C. and a humidity of 90 to 95%, 180 V AC, R 1 = 10Ω, 30 min ON-
The cycle of 90 min OFF was repeated for 1000 hr, and the rate of change of R 25 with respect to the initial resistance value after 1000 hr and the number of defective parts on the side surface of the ceramic element 2 where the migration phenomenon occurred were examined.
【００２４】塩酸雰囲気試験は、２０Ｌのデシケータ内
に０．３％の塩酸水溶液を０．１Ｌ入れ、周囲の温度２
５℃の中でＡＣ２２０Ｖ、Ｒ1＝２０Ωを５００ｈｒ印
加して、セラミック素子２側面においてマイグレーショ
ン現象の発生した不良個数を調べた。In a hydrochloric acid atmosphere test, 0.1 L of a 0.3% hydrochloric acid aqueous solution was placed in a 20 L desiccator, and an ambient temperature of 2 L was used.
A voltage of 220 V AC and R 1 = 20 Ω was applied for 500 hours at 5 ° C., and the number of defects in which migration phenomenon occurred on the side surface of the ceramic element 2 was examined.
【００２５】[0025]
【表１】 [Table 1]
【００２６】なお、評価欄にに×印を付した試料は、本
発明の範囲外であることを示す。表１から明らかなよう
に、導電性粉末が銅錫燐合金からなり、前記導電性粉末
に対するガラスフリットの添加量が３体積％以上４０体
積％未満である実施例３〜６，９，１０，１２および１
３の初期抵抗値Ｒ25は、インジウム−ガリウム合金から
なる比較例１の初期抵抗値Ｒ２５（４．５２Ω）と略同
じであることから、これら外部電極３，３はセラミック
素子２とオーミック接触したと言える。また同試料は、
湿中負荷寿命試験および塩酸雰囲気試験においても、マ
イグレーション現象は発生しなかった。Samples marked with a cross in the evaluation column are out of the scope of the present invention. As is clear from Table 1, Examples 3 to 6, 9, 10, and 10 in which the conductive powder is made of a copper-tin-phosphorus alloy, and the amount of glass frit added to the conductive powder is 3% by volume or more and less than 40% by volume. 12 and 1
Since the initial resistance value R 25 of Comparative Example 3 was substantially the same as the initial resistance value R 25 (4.52Ω) of Comparative Example 1 made of an indium-gallium alloy, these external electrodes 3 and 3 were in ohmic contact with the ceramic element 2. It can be said. The same sample
No migration phenomenon occurred in the wet load life test and the hydrochloric acid atmosphere test.
【００２７】他方、導電性粉末が銅錫燐合金からなり、
前記導電性粉末に対するガラスフリットの添加量が３重
量％より少ない実施例１，２において、実施例１は外部
電極を形成できず、実施例２の初期抵抗値Ｒ25は６．８
４Ωであり、インジウムガリウム合金からなる比較例１
の初期抵抗値Ｒ25（４．５２Ω）に比べて大きく、オー
ミック接触しているとは言い難い。したがって、何れも
本発明の所望する範囲外となった。On the other hand, the conductive powder is made of a copper-tin-phosphorus alloy,
In Examples 1 and 2 in which the amount of glass frit added to the conductive powder was less than 3% by weight, Example 1 was unable to form an external electrode, and Example 2 had an initial resistance R 25 of 6.8.
Comparative example 1 which is 4Ω and is made of an indium gallium alloy
Is larger than the initial resistance value R 25 (4.52Ω) of the above, and it is hard to say that ohmic contact is made. Therefore, all of them were out of the range desired by the present invention.
【００２８】また、導電性粉末が銅錫燐合金からなり、
前記導電性粉末に対するガラスフリットの添加量が４０
重量％より多い実施例７，８，１１，１４において、実
施例８，１１，１４は、初期抵抗値Ｒ25がそれぞれ７．
６２Ω，８．４１Ω，８．２２Ωで、インジウム−ガリ
ウム合金からなる比較例１の初期抵抗値Ｒ25に比べて大
きく、オーミック接触しているとは言い難い。また、実
施例７，８，１１，１４は何れも半田濡れ性が悪く、何
れも本発明の所望する範囲外となった。Further, the conductive powder is made of a copper-tin-phosphorus alloy,
The amount of glass frit added to the conductive powder is 40
In Examples 7, 8, 11, and 14 in which the content is more than 7% by weight, Examples 8, 11, and 14 each have an initial resistance value R 25 of 7.
It is 62 Ω, 8.41 Ω, and 8.22 Ω, which is larger than the initial resistance value R 25 of Comparative Example 1 made of an indium-gallium alloy, and it is hard to say that ohmic contact is made. Further, Examples 7, 8, 11, and 14 all had poor solder wettability, and all were outside the desired range of the present invention.
【００２９】[0029]
【発明の効果】以上のように本発明によれば、導電性粉
末と、ガラスフリットと、を主成分とする導電性ペース
トであって、前記導電性粉末は銅錫燐合金からなり、前
記ガラスフリットはホウケイ酸ビスマス系ガラス、ホウ
ケイ酸亜鉛系ガラス、ホウ酸塩系ガラスから選ばれる１
種からなり、前記ガラスフリットの添加量は、前記導電
性粉末１００体積％に対して３体積％以上４０体積％未
満とすることで、セラミック素子とオーミック接触し、
マイグレーション現象が発生しない外部電極を形成でき
る導電性ペーストを提供することができる。As described above, according to the present invention, there is provided a conductive paste containing conductive powder and glass frit as main components, wherein the conductive powder is made of a copper-tin-phosphorus alloy, The frit is selected from bismuth borosilicate glass, zinc borosilicate glass, and borate glass.
Seeds, the amount of addition of the glass frit is 3% by volume or more and less than 40% by volume with respect to 100% by volume of the conductive powder, thereby making ohmic contact with the ceramic element;
It is possible to provide a conductive paste that can form an external electrode that does not cause a migration phenomenon.
【００３０】また、本発明に係る導電性ペーストを用い
て外部電極を形成することで、セラミック素子とオーミ
ック接触し、マイグレーション現象が起きない外部電極
を備えた半導体セラミック電子部品を提供することがで
きる。Further, by forming an external electrode using the conductive paste according to the present invention, it is possible to provide a semiconductor ceramic electronic component having an external electrode which is in ohmic contact with a ceramic element and does not cause a migration phenomenon. .
【図１】本発明に係る一つの実施形態の半導体セラミッ
ク電子部品の断面図である。FIG. 1 is a cross-sectional view of a semiconductor ceramic electronic component according to one embodiment of the present invention.
【図２】本発明に係る一つの実施形態の半導体セラミッ
ク電子部品の外部電極を焼成する際の、酸素濃度のＰＴ
Ｃ特性に及ぼす影響を説明するグラフである。FIG. 2 shows the oxygen concentration PT when firing the external electrodes of the semiconductor ceramic electronic component according to one embodiment of the present invention.
9 is a graph illustrating an effect on a C characteristic.
【図３】本発明に係る一つの実施形態の導電性ペースト
で形成した外部電極の比抵抗値とその焼成温度及び焼成
温度雰囲気との関係を説明するグラフである。FIG. 3 is a graph illustrating a relationship between a specific resistance value of an external electrode formed of a conductive paste according to an embodiment of the present invention, a firing temperature thereof, and a firing temperature atmosphere.
【図４】湿中負荷寿命試験に使用した回路図である。FIG. 4 is a circuit diagram used for a wet load life test.
１ 半導体セラミック電子部品 ２ セラミック素子 ３ 外部電極 DESCRIPTION OF SYMBOLS 1 Semiconductor ceramic electronic component 2 Ceramic element 3 External electrode
Claims (2)
成分とする導電性ペーストであって、 前記導電性粉末は銅錫燐合金からなり、 前記ガラスフリットはホウケイ酸ビスマス系ガラス、ホ
ウケイ酸亜鉛系ガラス、ホウ酸塩系ガラスから選ばれる
１種からなり、 前記ガラスフリットの添加量は、前記導電性粉末１００
体積％に対して３体積％以上４０体積％未満であること
を特徴とする導電性ペースト。1. A conductive paste comprising a conductive powder and a glass frit as main components, wherein the conductive powder is made of a copper-tin-phosphorus alloy, and the glass frit is bismuth borosilicate glass, borosilicate The glass frit is made of one kind selected from zinc-based glass and borate-based glass.
A conductive paste characterized by being at least 3% by volume and less than 40% by volume with respect to% by volume.
る半導体セラミック電子部品であって、前記外部電極
は、請求項１に記載の導電性ペーストを前記セラミック
素体の両端部に塗布し乾燥させ焼付けて形成されている
ことを特徴とする半導体セラミック電子部品。2. A semiconductor ceramic electronic component comprising a ceramic body and an external electrode, wherein the external electrode is formed by applying the conductive paste according to claim 1 to both ends of the ceramic body and drying the paste. A semiconductor ceramic electronic component characterized by being formed by baking.
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| JP29123199A JP4244466B2 (en) | 1999-10-13 | 1999-10-13 | Conductive paste and semiconductor ceramic electronic component using the same |
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|---|---|---|---|
| JP29123199A JP4244466B2 (en) | 1999-10-13 | 1999-10-13 | Conductive paste and semiconductor ceramic electronic component using the same |
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| Publication Number | Publication Date |
|---|---|
| JP2001110232A true JP2001110232A (en) | 2001-04-20 |
| JP4244466B2 JP4244466B2 (en) | 2009-03-25 |
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ID=17766182
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|---|---|---|---|
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