JP2001084951A - Working observation device and sample working method - Google Patents
Working observation device and sample working methodInfo
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- JP2001084951A JP2001084951A JP26412299A JP26412299A JP2001084951A JP 2001084951 A JP2001084951 A JP 2001084951A JP 26412299 A JP26412299 A JP 26412299A JP 26412299 A JP26412299 A JP 26412299A JP 2001084951 A JP2001084951 A JP 2001084951A
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- sample
- processing
- fib
- image
- sem
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、集束イオンビーム
装置による試料の加工と加工中の試料断面の観察や分析
を一つの装置で行うことができる加工観察装置、及びそ
の加工観察装置を用いた試料加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing observation apparatus capable of processing a sample by a focused ion beam apparatus and observing and analyzing a sample cross section during processing with one apparatus, and using the processing observation apparatus. It relates to a sample processing method.
【０００２】[0002]
【従来の技術】近年、半導体装置は高集積化が進み形成
されるパターンが微細化しているため、半導体装置の検
査に際し、光学装置では分解能が不十分な状況になって
いる。このため、電子線装置やイオンビーム装置が半導
体装置製造のプロセスモニターとして用いられている。
半導体装置は今後、更に微細化が進み集積度が上がると
考えられており、半導体装置の検査装置としては、光学
式半導体検査装置に代わって荷電粒子ビームを使った半
導体検査装置、たとえば測長ＳＥＭ（Scannningelectro
n microscope）や集束イオンビーム（Focused ion bea
m：ＦＩＢ）装置が益々重要になりつつある。2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has increased and the patterns formed have become finer, the resolution of optical devices has been insufficient when inspecting semiconductor devices. For this reason, an electron beam device or an ion beam device is used as a process monitor for manufacturing a semiconductor device.
It is considered that the semiconductor device will be further miniaturized and the degree of integration will be increased in the future. As the semiconductor device inspection device, a semiconductor inspection device using a charged particle beam instead of an optical semiconductor inspection device, for example, a length measuring SEM (Scannningelectro
n microscope) and focused ion beam (Focused ion bea)
m: FIB) devices are becoming increasingly important.
【０００３】特に、半導体製造プロセスの不良解析を行
う場合、試料の断面観察が有効である。例をあげると、
異物検査装置や外観検査装置で試料の不良個所を特定
し、特定した不良個所をＦＩＢ装置で加工して断面を作
り、その断面をＦＩＢ、走査電子顕微鏡（Scannning el
ectron microscope：ＳＥＭ）あるいは透過電子顕微鏡
（Transmisson electron microscope：ＴＥＭ）で観察
して構造解析行う。また、試料断面の異物や構造の組成
分析には、エネルギー分散形Ｘ線分析装置（Energy dis
persive spectrometer：ＥＤＳ）が用いられる。In particular, when performing a failure analysis of a semiconductor manufacturing process, observation of a cross section of a sample is effective. For example,
Defective parts of the sample are specified by a foreign substance inspection device or a visual inspection device, and the specified defective portions are processed by a FIB device to form a cross section, and the cross section is formed by FIB and a scanning electron microscope (Scanning ellipse).
The structure is analyzed by observation with an ectron microscope (SEM) or a transmission electron microscope (TEM). An energy dispersive X-ray analyzer (Energy dispersive X-ray analyzer)
persive spectrometer (EDS) is used.
【０００４】[0004]
【発明が解決しようとする課題】半導体デバイスのＴＥ
Ｍ試料を作製する場合、特定の場所を狙ってスパッタ加
工することができるＦＩＢ装置が近年盛んに用いられる
ようになっている。しかし、半導体デバイスの微細化が
進むにつれ、特定の位置を精度良く加工することが益々
重要になり、試料を０．１μｍ以下の位置精度で０．１
μｍ以下の薄さに加工することが必要になっている。ま
た、半導体デバイスの多層構造化が進んでデバイスの厚
みが増し、不良解析場所は表面から深い位置に在る場合
が多い。この場合、表面からでは加工場所が分からない
が、このような表面から特定できない不良解析場所をＴ
ＥＭ試料に加工することが望まれている。SUMMARY OF THE INVENTION Semiconductor device TE
In the case of producing an M sample, an FIB apparatus capable of performing a sputter processing aiming at a specific place has been actively used in recent years. However, as the miniaturization of semiconductor devices progresses, it becomes more and more important to process a specific position with high accuracy.
It is necessary to process to a thickness of less than μm. Further, as the multilayer structure of a semiconductor device advances, the thickness of the device increases, and the failure analysis location is often located deep from the surface. In this case, the processing location is not known from the surface, but a failure analysis location that cannot be identified from such a surface is referred to as T.
Processing into EM samples is desired.
【０００５】本発明は、このような要請に応えるべくな
されたものであり、ＦＩＢ装置で加工している試料の断
面の状態を確認しながらＦＩＢ加工を制御できる加工観
察装置及び試料加工方法を提供することを目的とする。The present invention has been made to meet such a demand, and provides a processing observation apparatus and a sample processing method capable of controlling the FIB processing while confirming the state of the cross section of the sample processed by the FIB apparatus. The purpose is to do.
【０００６】[0006]
【課題を解決するための手段】本発明では、ＦＩＢで加
工中の試料の加工断面を走査電子顕微鏡（ＳＥＭ）によ
って観察するために、ＦＩＢ装置のイオン光学系の光軸
に対しＳＥＭの電子光学系の光軸を垂直に配置した。更
に、ステージ機構の駆動軸をイオン光学系の光軸と電子
光学系の光軸の双方に対して垂直に設定した。ＦＩＢ加
工中の加工断面におけるサブミクロンの微小部の状態を
加工と同時に監視するために、ＦＩＢ装置とＳＥＭのそ
れぞれに信号検出器を設け、また、それぞれの装置に像
表示のためのビーム走査制御回路と像表示制御回路を持
たせた。これにより、独立の倍率でＦＩＢ装置とＳＥＭ
による同時観察が可能になる。According to the present invention, in order to observe a processing section of a sample being processed by the FIB with a scanning electron microscope (SEM), the electron beam of the SEM is adjusted with respect to the optical axis of the ion optical system of the FIB apparatus. The optical axis of the system was arranged vertically. Further, the drive axis of the stage mechanism was set perpendicular to both the optical axis of the ion optical system and the optical axis of the electron optical system. A signal detector is provided in each of the FIB device and the SEM in order to simultaneously monitor the state of submicron microscopic parts in the processing cross section during FIB processing, and beam scanning control for image display is performed in each device. Circuit and image display control circuit. As a result, the FIB device and the SEM
Enables simultaneous observation.
【０００７】ＦＩＢ装置による像観察方向とＳＥＭによ
る像観察方向が９０°違うことから、ステージ機構の移
動方向と像の動きを一致させ、且つ、双方で同一像（た
とえば試料に文字Ｆが描かれているとして、ＦＩＢ装置
でもＳＥＭでもＦと見える）にするため、ステージ機構
の駆動方向とビーム偏向の極性を図３に示すような関係
にした。Since the image observation direction by the FIB apparatus and the image observation direction by the SEM are different by 90 °, the moving direction of the stage mechanism and the movement of the image are matched, and the same image (for example, a character F is drawn on a sample) Therefore, the driving direction of the stage mechanism and the polarity of the beam deflection are set as shown in FIG.
【０００８】それぞれの装置で鮮明な像を得るために、
ＦＩＢ装置はイオン像と二次電子像を検出表示できるよ
うにし、ＳＥＭは二次電子像と反射電子像を検出表示で
きるようにした。ＦＩＢ装置でイオン像を検出する場合
には検出器の引き込み電圧をマイナスに設定し、二次電
子像を検出する場合には引き込み電圧をプラスに設定す
る。また、ＳＥＭで二次電子像を検出する場合には検出
器の引き込み電圧をプラスに設定し、反射電子像を検出
するには検出器の引き込み電圧を０にする。ＦＩＢ加工
中にＳＥＭで加工断面を観察できるように、像の表示は
次の表１に示す４つの組合わせができるようにした。In order to obtain a clear image with each device,
The FIB device is adapted to detect and display an ion image and a secondary electron image, and the SEM is capable of detecting and displaying a secondary electron image and a reflected electron image. When the FIB device detects an ion image, the pull-in voltage of the detector is set to a negative value, and when the secondary electron image is detected, the pull-in voltage is set to a positive value. When a secondary electron image is detected by the SEM, the pull-in voltage of the detector is set to be positive, and when a reflected electron image is detected, the pull-in voltage of the detector is set to zero. The images were displayed in the following four combinations shown in Table 1 so that the processed cross section could be observed by SEM during FIB processing.
【０００９】[0009]
【表１】 [Table 1]
【００１０】ＦＩＢ加工中の同時観察でＳＥＭによるＦ
ＩＢ加工断面の鮮明な像が得られる組合せは、表１の１
又は２の組み合わせであった。従って、ＦＩＢ加工中に
はＳＥＭの像表示は反射電子像にして二次電子を排除し
た。これにより、ＦＩＢ装置で発生した二次電子の影響
を受けない鮮明な像が得られた。At the same time during FIB processing, F
Combinations that can provide a clear image of the IB processing section are shown in Table 1
Or a combination of two. Therefore, during FIB processing, the SEM image display was a reflected electron image to eliminate secondary electrons. As a result, a clear image not affected by the secondary electrons generated in the FIB device was obtained.
【００１１】この理由は、同時観察ではＦＩＢとＳＥＭ
の両方で二次電子が発生して、二次電子検出では混合し
て検出されるが、物理的に二次イオンの発生はＦＩＢの
みから、反射電子の発生はＳＥＭのみからと限定されて
いる。したがって、二次イオンや反射電子の情報は装置
間で混合することがないので、表１の１又は２の組み合
わせで同時観察を行うとＦＩＢ加工断面の鮮明な像が得
られる。The reason for this is that FIB and SEM
And secondary electrons are mixed and detected in the secondary electron detection, but the generation of secondary ions is physically limited to only FIB and the generation of reflected electrons is limited to only SEM. . Therefore, since information on secondary ions and reflected electrons does not mix between the apparatuses, a clear image of the FIB processed cross section can be obtained by performing simultaneous observation with a combination of 1 and 2 in Table 1.
【００１２】本発明による加工観察装置は、試料室と、
ＦＩＢ装置カラムと、ＳＥＭカラムと、試料室に固定さ
れ試料ホールダを保持して駆動するステージ機構とを備
え、ＦＩＢ装置カラムのイオンビーム光学軸とＳＥＭカ
ラムの電子ビーム光学軸とステージ機構の試料ホールダ
駆動軸の一軸とが互いに直交していることを特徴とす
る。ＦＩＢ装置カラムは、イオン源、イオン源から放出
されたイオンビームを集束して試料に照射するためのイ
オン光学系、イオンビームを偏向制御するための偏向器
等を備え、ＳＥＭカラムは電子源、電子源から放出され
た電子ビームを収束して試料に照射するための電子光学
系、電子ビームを偏向制御するための偏向器等を備え
る。A processing observation apparatus according to the present invention comprises a sample chamber,
A FIB apparatus column, an SEM column, and a stage mechanism fixed to the sample chamber and holding and driving the sample holder; the ion beam optical axis of the FIB apparatus column, the electron beam optical axis of the SEM column, and the sample holder of the stage mechanism It is characterized in that one axis of the drive shaft is orthogonal to each other. The FIB apparatus column includes an ion source, an ion optical system for focusing the ion beam emitted from the ion source and irradiating the sample with a beam, a deflector for controlling the deflection of the ion beam, and the like. The SEM column includes an electron source, An electron optical system for converging the electron beam emitted from the electron source and irradiating the sample with the electron beam, a deflector for controlling the deflection of the electron beam, and the like are provided.
【００１３】ステージ機構は、サイドエントリー型のス
テージ機構である。サイドエントリー型のステージ機構
に装着された試料ホールダは、ステージ機構の前記一軸
のまわりに９０°ステップで３６０°回転できる。この
構造により、ＦＩＢで加工したＴＥＭ用試料断面をＳＥ
Ｍで表裏の観察と分析できる。The stage mechanism is a side entry type stage mechanism. The sample holder mounted on the side entry type stage mechanism can rotate 360 ° around the one axis of the stage mechanism in 90 ° steps. With this structure, the cross section of the TEM sample processed by FIB is SE
M allows observation and analysis of the front and back.
【００１４】この加工観察装置は、試料室に対するＦＩ
Ｂ装置カラム及びＳＥＭカラムの少なくとも一方の位置
を調整する位置調整機構を備える。この位置調整機構に
より、ＦＩＢ装置による加工断面が、ステージ機構を動
かすことなくＳＥＭの観察視野に入るように調整する。
位置調整機構によりＳＥＭの走査電子線偏向を利用した
イメージシフト機能で調整できる範囲（±２０μｍ以
内）まで機械的にＦＩＢ装置の視野とＳＥＭの視野を合
わせることによりＦＩＢ装置とＳＥＭで同一視野を得る
ことができる。This processing observation apparatus uses a FI
A position adjusting mechanism for adjusting the position of at least one of the B apparatus column and the SEM column is provided. The position adjustment mechanism adjusts the cross section processed by the FIB apparatus so as to enter the observation field of view of the SEM without moving the stage mechanism.
The same field of view is obtained between the FIB device and the SEM by mechanically aligning the field of view of the FIB device with the field of view of the SEM to a range (within ± 20 μm) that can be adjusted by the image shift function using scanning electron beam deflection of the SEM by the position adjustment mechanism. be able to.
【００１５】ＦＩＢ装置はイオン像と二次電子像とを切
り換えて表示する機能を有し、ＳＥＭは反射電子像と二
次電子像とを切り換えて表示する機能を有する。イオン
像と二次電子像の切り換え、あるいは反射電子像と二次
電子像の切り換えは、例えば検出器の引き込み電圧を切
換えることで行うことができる。イオン像を表示すると
きは、検出器の引き込み電圧をマイナスにする。二次電
子像を表示するときは、検出器の引き込み電圧をプラス
にする。また、反射電子像を表示するときは、検出器の
引き込み電圧をマイナスにして検出器に二次電子が入ら
ないようにする。The FIB device has a function of switching and displaying an ion image and a secondary electron image, and the SEM has a function of switching and displaying a reflected electron image and a secondary electron image. Switching between the ion image and the secondary electron image or switching between the reflected electron image and the secondary electron image can be performed, for example, by switching the pull-in voltage of the detector. When displaying an ion image, the pull-in voltage of the detector is made negative. When displaying a secondary electron image, the pull-in voltage of the detector is made positive. Further, when displaying a reflected electron image, the pull-in voltage of the detector is set to a negative value so that secondary electrons do not enter the detector.
【００１６】加工観察装置にエネルギー分散形Ｘ線分析
装置を併置する場合、エネルギー分散形Ｘ線分析装置の
検出器は、直接ＦＩＢ加工位置を見込まない位置に退避
できるように可動とするのが好ましい。また、エネルギ
ー分析形Ｘ線分析装置の検出器先端に脱着可能な保護膜
を装着するのが好ましい。本発明による試料加工方法
は、前記加工観察装置を用いて、試料のＦＩＢ加工断面
をＳＥＭで観察しながらＦＩＢで加工することを特徴と
する。この方法は、特に試料のサブミクロン以下の特定
微小部をＦＩＢで加工するのに有効である。In the case where an energy dispersive X-ray analyzer is installed in the processing observation device, it is preferable that the detector of the energy dispersive X-ray analyzer be movable so that it can be retracted to a position where the FIB processing position is not directly expected. . Further, it is preferable to attach a removable protective film to the tip of the detector of the energy analysis type X-ray analyzer. A sample processing method according to the present invention is characterized in that a FIB processing section is processed by FIB while observing a FIB processed cross section of the sample by SEM using the processing observation apparatus. This method is particularly effective for processing a specific minute portion of a sample of submicron or less by FIB.
【００１７】試料のＦＩＢ加工断面をＳＥＭで反射電子
像を観察しながら、あるいは加工断面をエネルギー分散
形Ｘ線分析装置で分析しながらＦＩＢで加工することに
より、加工終点を容易に検出することができる。ＳＥＭ
による反射電子像の観察は、ＳＥＭの信号検出器を反射
電子検出器に切換えるか、二次電子検出器の引き込み電
圧を切るか弱くして反射電子を検出するが二次電子を捕
捉しないようにして行う。ＦＩＢ加工中は、ＦＩＢ装置
は試料のイオン像を観察する。The end point of the processing can be easily detected by processing the FIB processed cross section of the sample with the FIB while observing the reflected electron image with a SEM or analyzing the processed cross section with an energy dispersive X-ray analyzer. it can. SEM
Observation of the backscattered electron image is performed by switching the SEM signal detector to the backscattered electron detector, or turning off or weakening the pull-in voltage of the secondary electron detector to detect the backscattered electrons but not to capture the secondary electrons. Do. During FIB processing, the FIB apparatus observes an ion image of the sample.
【００１８】ＦＩＢによる二次電子像、二次イオン像、
ＳＥＭによる二次電子像、反射電子像から得られる情報
はそれぞれ異なる。例えば、ＳＥＭの二次電子像は高分
解能ではあるが、結晶粒に関する情報が得られない。一
方、二次イオン像からは結晶粒の情報が得られる。した
がって、これらの像をそれぞれ比較することにより、試
料に関してより多くの情報を得ることができる。Secondary electron image, secondary ion image by FIB,
Information obtained from the secondary electron image and the reflected electron image by the SEM is different from each other. For example, although the secondary electron image of the SEM has a high resolution, information on crystal grains cannot be obtained. On the other hand, information on crystal grains can be obtained from the secondary ion image. Thus, by comparing each of these images, more information about the sample can be obtained.
【００１９】[0019]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図１は、本発明による加工観察装
置のシステム構成例を説明する概略図である。この加工
観察装置は、ＦＩＢカラム２０、ＳＥＭカラム４０、試
料室６０、ステージ機構７０、後述するようにステージ
機構７０に装着されて試料１０を保持する試料ホールダ
８０、ＥＤＳ検出器９５、Ｗ（タングステン）デポ銃９
６、ＦＩＢ装置用検出器３１、ＳＥＭ用検出器５１を備
える。試料室６０、ＦＩＢカラム２０及びＳＥＭカラム
４０の内部は、真空排気装置６５によって真空排気され
ている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram illustrating an example of a system configuration of a processing observation device according to the present invention. This processing observation apparatus includes a FIB column 20, a SEM column 40, a sample chamber 60, a stage mechanism 70, a sample holder 80 mounted on the stage mechanism 70 to hold the sample 10 as described later, an EDS detector 95, a W (tungsten) ) Depot gun 9
6. It has a detector 31 for FIB device and a detector 51 for SEM. The insides of the sample chamber 60, the FIB column 20, and the SEM column 40 are evacuated by a vacuum exhaust device 65.
【００２０】ＦＩＢは電子ビームと違いスパッタ作用が
大きいので、試料１０の微細加工に利用できる。そのた
め、ＦＩＢ装置はＴＥＭ用試料の加工又はＳＥＭ用試料
の断面加工のための加工機と観察装置として使われ、Ｓ
ＥＭは加工試料の観察及びＥＤＳと組み合せた分析装置
として使われる。Ｗデポ銃９６は、加工試料上にイオン
ビーム誘発Ｗ膜を堆積し、保護膜を形成するためのもの
である。ＥＤＳ分析器９５は、ＳＥＭの電子線照射によ
って試料１０から発生されるＸ線を検出してＸ線分析を
行う。Since FIB has a large sputtering effect unlike an electron beam, it can be used for fine processing of the sample 10. Therefore, the FIB device is used as a processing machine and an observation device for processing a TEM sample or for processing a cross section of a SEM sample.
EM is used as an analyzer for observation of processed samples and EDS. The W deposition gun 96 is for depositing an ion beam-induced W film on a processed sample to form a protective film. The EDS analyzer 95 performs X-ray analysis by detecting X-rays generated from the sample 10 by SEM electron beam irradiation.
【００２１】ＦＩＢで加工中の試料１０の加工断面を観
察するために、ＦＩＢ装置のイオン光学系の軸に対しＳ
ＥＭの電子光学系の軸が垂直になるように配置した。更
に、ステージ機構７０は、その駆動軸の一つがイオン光
学系の軸及び電子光学系の軸に対して垂直になるように
した。また、ＦＩＢ加工中に、試料のサブミクロンの微
小部の加工断面状態を同時に監視するために、ＦＩＢ装
置とＳＥＭのそれぞれに信号検出器３１，５１を設け、
それぞれの装置にビーム走査制御回路と像表示制御回路
を備えた。これにより、独立の倍率でＦＩＢとＳＥＭに
よる同時観察ができるようになった。ただし、上記ＦＩ
Ｂ装置のイオン光学系の軸とＳＥＭの電子光学系の軸
は、正確に直交していなくても、おおよそ直交していれ
ば有用であった。In order to observe the processed cross section of the sample 10 being processed by the FIB, the axis of the ion optical system of the FIB apparatus is set to S.
The EM was arranged such that the axis of the electron optical system was vertical. Further, the stage mechanism 70 has one of its drive axes perpendicular to the axis of the ion optical system and the axis of the electron optical system. In addition, during FIB processing, signal detectors 31 and 51 are provided in the FIB apparatus and the SEM, respectively, in order to simultaneously monitor the processing cross-sectional state of the submicron minute portion of the sample.
Each device was provided with a beam scanning control circuit and an image display control circuit. This allows simultaneous observation by FIB and SEM at independent magnifications. However, the above FI
Even if the axis of the ion optical system of the apparatus B and the axis of the electron optical system of the SEM were not exactly orthogonal, it was useful if they were approximately orthogonal.
【００２２】図２は、試料ホールダ８０とステージ機構
７０の説明図である。試料ホールダ８０は、ピン８１、
シャフト８３，８４、試料固定部８５、取っ手８６、及
び試料向き切替えつまみ８７を備える。試料１０は試料
固定部８５に固定される。試料固定部８５はシャフト８
３に固定されており、シャフト８３はシャフト８４及び
取っ手８６の内部を貫通し、その端部に試料向き切替え
つまみ８７が取り付けられている。従って、試料向き切
替えつまみ８７を回すと、シャフト８４に対してシャフ
ト８３が回転する。FIG. 2 is an explanatory diagram of the sample holder 80 and the stage mechanism 70. The sample holder 80 includes a pin 81,
The apparatus includes shafts 83 and 84, a sample fixing portion 85, a handle 86, and a sample direction switching knob 87. The sample 10 is fixed to the sample fixing section 85. The sample fixing part 85 is the shaft 8
3, the shaft 83 penetrates through the inside of the shaft 84 and the handle 86, and a sample direction switching knob 87 is attached to an end of the shaft 83. Therefore, when the sample direction switching knob 87 is turned, the shaft 83 rotates with respect to the shaft 84.
【００２３】試料ホールダ８０は、試料室６０の壁面に
取り付けられたステージ機構（サイドエントリー型ステ
ージ機構）７０に装着される。ステージ機構７０にはシ
ャフト挿入穴７１と溝７２が設けられている。シャフト
８４上のピン８１をステージ機構７０の溝７２の位置に
合わせて試料ホールダ８０のシャフト８４をシャフト挿
入穴７１に挿入すると、試料ホールダ８０は、ピン８１
が溝７２にガイドされ、ステージ機構７０に位置決めさ
れて挿入される。ステージ機構７０はシャフト挿入穴７
１に挿入された試料ホールダ８０のシャフト８４を気密
に保持し、試料ホールダ８０をホールダ挿入方向及びそ
の方向に直交する２方向及びθ方向に駆動することがで
きる。また、ステージ機構７０に保持された試料ホール
ダ８０の試料向き切替えつまみ８７を回すと、試料ホー
ルダ挿入方向を軸としてシャフト８３及び試料固定部８
５が回転する。試料向き切替えつまみ８７は、９０゜ず
つステップ的に回転できる。The sample holder 80 is mounted on a stage mechanism (side entry type stage mechanism) 70 mounted on the wall of the sample chamber 60. The stage mechanism 70 has a shaft insertion hole 71 and a groove 72. When the pin 81 on the shaft 84 is aligned with the position of the groove 72 of the stage mechanism 70 and the shaft 84 of the sample holder 80 is inserted into the shaft insertion hole 71, the sample holder 80
Is guided by the groove 72, and is positioned and inserted into the stage mechanism 70. The stage mechanism 70 has the shaft insertion hole 7
The shaft 84 of the sample holder 80 inserted into the holder 1 can be kept airtight, and the sample holder 80 can be driven in two directions orthogonal to the holder insertion direction and the holder insertion direction and in the θ direction. When the sample direction switching knob 87 of the sample holder 80 held by the stage mechanism 70 is turned, the shaft 83 and the sample fixing portion 8 are rotated about the sample holder insertion direction as an axis.
5 rotates. The sample direction switching knob 87 can be rotated stepwise by 90 °.
【００２４】試料ホールダ８０のこの構造によって、Ｆ
ＩＢで加工した試料断面をＳＥＭで観察できるととも
に、試料の向きを９０°回転して、ＦＩＢによってＳＥ
Ｍで観察した試料断面と同一の試料断面を観察すること
が可能になる。イオン照射によって試料から放出された
二次電子による二次電子像と、電子線照射によって試料
から放出された二次電子による二次電子像では、同じ二
次電子像でも違いが生じる。この試料ホールダ８０を用
いると、試料を９０゜回転することによって試料の同一
位置の二次電子像をＦＩＢ装置とＳＥＭによって観察す
ることができ、試料断面についての多くの情報を簡便に
得ることができる。With this structure of the sample holder 80, F
The cross section of the sample processed by IB can be observed by SEM, and the direction of the sample is rotated by 90 °, and the SEB is set by FIB.
It becomes possible to observe the same sample section as the sample section observed in M. A difference occurs between a secondary electron image formed by secondary electrons emitted from a sample by ion irradiation and a secondary electron image formed by secondary electrons emitted from a sample by electron beam irradiation, even with the same secondary electron image. By using the sample holder 80, a secondary electron image at the same position of the sample can be observed by the FIB apparatus and the SEM by rotating the sample by 90 °, so that much information about the sample cross section can be easily obtained. it can.
【００２５】図３は、ＦＩＢ装置のイオンビーム入射方
向、ＳＥＭの電子ビーム入射方向、及びステージ機構の
移動方向の関係を説明する図である。図３（ａ）に示す
ように、ＦＩＢ装置のイオンビーム入射方向とＳＥＭの
電子ビーム入射方向は直交しており、ホールダ挿入方向
（ステージ機構軸）はその両方向に直交している。図３
に示すように、ＳＥＭからみたＸ，Ｙ，Ｚ方向は、ＦＩ
Ｂ装置ではＸ，Ｚ，Ｙ方向にそれぞれ対応する。この場
合、ＳＥＭでＺを調整してもＳＥＭ像は移動しないが、
ＦＩＢ装置による観察像はＹ方向に移動する。このこと
を利用して、ＦＩＢ装置とＳＥＭの観察点を一致させる
ことができる。FIG. 3 is a view for explaining the relationship among the direction of incidence of the ion beam of the FIB apparatus, the direction of incidence of the electron beam of the SEM, and the direction of movement of the stage mechanism. As shown in FIG. 3A, the direction of incidence of the ion beam of the FIB apparatus is perpendicular to the direction of incidence of the electron beam of the SEM, and the direction of inserting the holder (the axis of the stage mechanism) is perpendicular to both directions. FIG.
As shown in the figure, the X, Y, and Z directions viewed from the SEM are FI
The B apparatus corresponds to the X, Z, and Y directions, respectively. In this case, the SEM image does not move even if Z is adjusted with the SEM,
The image observed by the FIB device moves in the Y direction. By utilizing this, the observation points of the FIB apparatus and the SEM can be matched.
【００２６】図３（ｂ）は、試料が図３（ａ）の姿勢に
あるときＦＩＢ装置で観察した試料表面のＦＩＢ像であ
る。また、図３（ｃ）はＳＥＭで観察した試料断面のＳ
ＥＭ像である。試料ホールダ４は、ＦＩＢで加工したＴ
ＥＭ用試料断面をＳＥＭで表裏の観察と分析ができるよ
うに、９０°ステップで３６０°回転できるようになっ
ている。ステージ機構７０の移動方向と像の動きを一致
させ、且つ、ＳＥＭとＦＩＢ装置で同一像を観察できる
ようにするため、例えば文字Ｆが描かれた試料の像を観
察したとき、ＦＩＢ装置でもＳＥＭでもＦと見えるよう
にするため、ステージ機構の駆動方向とビーム偏向の極
性を図３の関係にした。FIG. 3B is a FIB image of the sample surface observed by the FIB apparatus when the sample is in the posture of FIG. 3A. FIG. 3 (c) shows the S section of the sample section observed by SEM.
It is an EM image. The sample holder 4 is made of T
The cross section of the EM sample can be rotated 360 ° in 90 ° steps so that the front and back sides can be observed and analyzed by SEM. In order to make the movement direction of the stage mechanism 70 coincide with the movement of the image and to allow the same image to be observed by the SEM and the FIB device, for example, when the image of the sample on which the character F is drawn is observed, the SEM is also used by the FIB device. However, in order to make it appear as F, the driving direction of the stage mechanism and the polarity of beam deflection are set to the relationship shown in FIG.
【００２７】ＦＩＢ装置とＳＥＭで同一視野を得るため
に、ＳＥＭのイメージシフト機構で調整できる範囲（±
２０μｍ以内）までＦＩＢ装置とＳＥＭの視野を機械的
に合わせる調整機構をＳＥＭ鏡筒の試料室取付け部に設
けた。In order to obtain the same field of view with the FIB device and the SEM, the range (±) which can be adjusted by the image shift mechanism of the SEM.
An adjustment mechanism for mechanically matching the field of view of the FIB apparatus and the SEM up to 20 μm) was provided at the sample chamber mounting portion of the SEM lens barrel.
【００２８】図４は、ＦＩＢ装置とＳＥＭの視野合わせ
調整機構の説明図である。図４（ａ）は試料室に取り付
けられたＳＥＭカラムを示す側面図、図４（ｂ）はＳＥ
Ｍカラムを光軸方向に見た図である。図４（ａ）に示す
ように、ＳＥＭカラム４０は試料室６０にＯリング６１
で真空シールドされて取付けられている。試料室６０と
ＳＥＭカラム４０は、真空ポンプによって真空排気され
高真空に保たれている。ＳＥＭカラム取付けフランジ５
９の周囲には試料室６０に固定されたリング状の位置調
整板６２があり、位置調整板６２には位置調整ネジ６３
が４ヶ所に設けられている。４ヶ所の位置調整ネジ６３
の押し出し量を調整することにより、試料室６０に対す
るＳＥＭカラム４０の位置を調整することができる。FIG. 4 is an explanatory view of a mechanism for adjusting the field of view of the FIB apparatus and the SEM. FIG. 4A is a side view showing the SEM column attached to the sample chamber, and FIG.
It is the figure which looked at the M column in the optical axis direction. As shown in FIG. 4A, the SEM column 40 has an O-ring 61
It is mounted with a vacuum shield. The sample chamber 60 and the SEM column 40 are evacuated and maintained at a high vacuum by a vacuum pump. SEM column mounting flange 5
9, there is a ring-shaped position adjusting plate 62 fixed to the sample chamber 60, and the position adjusting plate 62 has position adjusting screws 63.
Are provided at four locations. 4 position adjustment screws 63
The position of the SEM column 40 with respect to the sample chamber 60 can be adjusted by adjusting the amount of extrusion.
【００２９】この調整機構を用いて、ＦＩＢ装置とＳＥ
Ｍの視野を、ＳＥＭのイメージシフトで調整できる範囲
（±２０μｍ以内）まで合わせた。ＦＩＢ装置とＳＥＭ
の視野合わせに当たっては、例えばＦＩＢ装置によって
試料像を観察し、次に試料ホールダ８０の試料向き切替
えつまみ８７を９０゜回して、ＦＩＢ装置による試料観
察面をＳＥＭ側に向ける。そして、ＳＥＭによる試料像
を見ながら、その像がＦＩＢ装置による試料像と一致す
るように、位置調整板６２の位置調整ネジ６３によって
試料室６０に対するＳＥＭカラム４０の位置を調整す
る。ＦＩＢ装置の視野とＳＥＭの視野を合わせること
は、ステージ機構７０のＸ軸とＦＩＢの光軸との交点に
ＳＥＭの軸を合わせることに相当する。ＦＩＢ装置の視
野とＳＥＭの視野が合っていれば、試料ホールダ８０の
試料固定部８５を９０゜回転することで、ＦＩＢ装置と
ＳＥＭによって試料上の同じ点を観察することができ
る。Using this adjustment mechanism, the FIB device and the SE
The field of view of M was adjusted to a range (within ± 20 μm) that could be adjusted by SEM image shift. FIB equipment and SEM
In the field of view adjustment, the sample image is observed by, for example, the FIB device, and then the sample direction switching knob 87 of the sample holder 80 is turned by 90 ° to turn the sample observation surface of the FIB device toward the SEM. Then, while watching the sample image by the SEM, the position of the SEM column 40 with respect to the sample chamber 60 is adjusted by the position adjusting screw 63 of the position adjusting plate 62 so that the image matches the sample image by the FIB apparatus. Matching the field of view of the FIB device with the field of view of the SEM corresponds to matching the axis of the SEM with the intersection of the X axis of the stage mechanism 70 and the optical axis of the FIB. If the field of view of the FIB apparatus matches the field of view of the SEM, the same point on the sample can be observed with the FIB apparatus and the SEM by rotating the sample fixing portion 85 of the sample holder 80 by 90 °.
【００３０】図５は、本発明による試料加工観察装置の
システム構成を示す概略図である。ＦＩＢ装置のＧａ液
体金属イオン源２１から引出されたＧａイオンビーム２
２は３０ｋＶに加速され、ビーム制限アパーチャ２３を
通過して対物レンズ２４で集束され、固体試料１０を照
射する。ビーム走査信号生成装置２５は、制御コンピュ
ータ９０からビーム走査を開始命令を受けると、ビーム
走査信号を偏向器制御装置２６に渡し、偏向器制御装置
２６では走査（偏向）信号に基づいて電圧を生成して偏
向器２７に電圧を印加する。イオンビーム２２は、試料
１０上を走査するように偏向制御される。FIG. 5 is a schematic diagram showing the system configuration of the sample processing observation apparatus according to the present invention. Ga ion beam 2 extracted from Ga liquid metal ion source 21 of FIB apparatus
2 is accelerated to 30 kV, passes through the beam limiting aperture 23, is focused by the objective lens 24, and irradiates the solid sample 10. Upon receiving a command to start beam scanning from the control computer 90, the beam scanning signal generator 25 passes the beam scanning signal to the deflector controller 26, and the deflector controller 26 generates a voltage based on the scanning (deflection) signal. Then, a voltage is applied to the deflector 27. The deflection of the ion beam 22 is controlled so as to scan the sample 10.
【００３１】イオンビーム２２を照射することによって
固体試料１０から発生した二次電子１１と二次イオン１
２は、検出器３１で検出され、プリアンプ３２で増幅さ
れて電気信号に変換される。検出器３１には、検出電圧
（引き込み電圧）がプラスがマイナスかに応じて二次電
子１１と二次イオン１２を選別して検出できるＭＣＰ
（マイクロチャンネルプレート）を使用した。上記検出
信号は、偏向器制御装置２６からの偏向信号と同期して
走査信号を輝度変調してワークステーション（ＷＳ）の
モニター３３に像表示されると同時に、信号処理装置３
４で像をデジタル化してメモリに蓄える。この信号処理
装置３４のデータは、制御コンピュータ９０に渡され制
御される。Secondary electrons 11 and secondary ions 1 generated from solid sample 10 by irradiation with ion beam 22
2 is detected by a detector 31, amplified by a preamplifier 32, and converted into an electric signal. The detector 31 has an MCP that can selectively detect the secondary electrons 11 and the secondary ions 12 according to whether the detection voltage (pull-in voltage) is positive or negative.
(Microchannel plate) was used. The detection signal is subjected to luminance modulation of the scanning signal in synchronism with the deflection signal from the deflector control device 26 to be displayed as an image on the monitor 33 of the workstation (WS).
At 4 the image is digitized and stored in memory. The data of the signal processing device 34 is passed to and controlled by the control computer 90.
【００３２】同様に、ＳＥＭの電子源４１から引出され
た電子ビーム４２は、最大３０ｋＶに加速され、ビーム
制限アパーチャ４３を通過して対物レンズ４４で集束さ
れて固体試料１０を照射する。走査信号生成装置４５
は、制御コンピュータ９０からビーム走査を開始命令を
受けると走査信号を偏向器制御装置４６に渡し、偏向器
制御装置４６では走査（偏向）信号に基づいて電圧を生
成して偏向器４７に電圧を印加する。こうして、電子ビ
ーム４２は試料１０上を走査するよう偏向制御される。Similarly, the electron beam 42 extracted from the electron source 41 of the SEM is accelerated to a maximum of 30 kV, passes through the beam limiting aperture 43, is focused by the objective lens 44, and irradiates the solid sample 10. Scanning signal generator 45
Receives a command to start beam scanning from the control computer 90, passes a scanning signal to the deflector controller 46, and the deflector controller 46 generates a voltage based on the scanning (deflection) signal, and applies a voltage to the deflector 47. Apply. Thus, the deflection of the electron beam 42 is controlled so as to scan the sample 10.
【００３３】電子ビーム４２を照射することによって固
体試料１０から発生した二次電子１３と反射電子１４
は、検出器５１で検出され、プリアンプ５２で増幅され
て電気信号に変換される。検出器５１として、検出電圧
（引き込み電圧）がプラスか０かに応じて二次電子１３
と反射電子１４を選別して検出できるＹＡＧ半導体検出
器を用いた。増幅された検出信号は、偏向制御装置４６
の偏向信号と同期してモニターの走査信号を輝度変調し
てＷＳのモニター５３に像表示されると同時に、信号処
理装置５４で像をデジタル化してメモリに蓄える。この
信号処理装置５４のデータは、制御コンピュータ９０に
渡され制御される。Secondary electrons 13 and reflected electrons 14 generated from solid sample 10 by irradiating electron beam 42
Is detected by the detector 51, amplified by the preamplifier 52, and converted into an electric signal. As the detector 51, depending on whether the detection voltage (pull-in voltage) is positive or zero, the secondary electrons 13
A YAG semiconductor detector capable of selectively detecting the reflected electrons 14 and the reflected electrons 14 was used. The amplified detection signal is supplied to the deflection controller 46.
The scanning signal of the monitor is luminance-modulated in synchronism with the deflection signal, and the image is displayed on the monitor 53 of the WS. At the same time, the image is digitized by the signal processor 54 and stored in the memory. The data of the signal processing device 54 is passed to and controlled by the control computer 90.
【００３４】図６は、電子線照射で試料から発生する二
次粒子のエネルギー分布を示す説明図である。一般に、
電子線照射では二次電子と反射電子が発生する。二次電
子のエネルギーは約４ｅＶにピークがあり、そのピーク
から減少しながら５０ｅＶ程度まで拡がる。また、反射
電子のエネルギーは、照射エネルギーと等しいエネルギ
ーの付近にピークを生じる。FIG. 6 is an explanatory diagram showing the energy distribution of secondary particles generated from a sample by electron beam irradiation. In general,
Electron beam irradiation generates secondary electrons and reflected electrons. The energy of the secondary electron has a peak at about 4 eV, and extends from the peak to about 50 eV while decreasing. Also, the energy of the reflected electrons has a peak near the energy equal to the irradiation energy.
【００３５】図７は、イオン照射で試料から発生する二
次粒子のエネルギー分布を示す説明図である。イオン照
射では、電子線照射の場合と同様に約４ｅＶにピークが
あり、それから減少しながら５０ｅＶ程度まで拡がる二
次電子を生じるが、反射電子は生じない。その代わり、
イオンビームのスパッタ作用で二次イオンを生じる。FIG. 7 is an explanatory diagram showing an energy distribution of secondary particles generated from a sample by ion irradiation. In the case of ion irradiation, as in the case of electron beam irradiation, there is a peak at about 4 eV, and then secondary electrons which decrease and spread to about 50 eV are generated, but no reflected electrons are generated. Instead,
Secondary ions are generated by the sputtering action of the ion beam.
【００３６】従って、二次電子の検出効率を高めるに
は、二次電子発生点近傍に数Ｖ程度の検出器への引込み
電圧が必要である。一方、反射電子はエネルギーが高く
引き込み電圧を必要としない。このため、反射電子は直
接検出器で捉えるが、発生点からの距離の２乗に反比例
して反射電子検出効率が悪くなるので、検出立体角が大
きくなるように発生点近傍で検出される。二次イオン
は、二次電子と極性が反対で、エネルギー分布が二次電
子より若干低い方にシフトしているが分布は良く似てい
る。このため、二次イオン検出には負の引き込み電圧を
印加する。当然この条件では、電子の検出が排除され
る。Therefore, in order to increase the detection efficiency of the secondary electrons, a voltage of about several volts to be applied to the detector is required near the secondary electron generation point. On the other hand, reflected electrons have high energy and do not require a drawing voltage. For this reason, the backscattered electrons are directly captured by the detector, but the backscattered electron detection efficiency deteriorates in inverse proportion to the square of the distance from the point of occurrence. Therefore, the backscattered electrons are detected near the point of occurrence so that the detected solid angle increases. Secondary ions have a polarity opposite to that of secondary electrons, and the energy distribution is slightly lower than the secondary electrons, but the distribution is very similar. Therefore, a negative pull-in voltage is applied for secondary ion detection. Of course, this condition precludes the detection of electrons.
【００３７】鮮明な像を表示するために、ＦＩＢ装置の
検出器は、ＭＣＰ（マルチチャンネルプレート）を用い
てイオン像と二次電子像を検出表示できるように、ＳＥ
Ｍの検出器は、シンチレータとＰＨＭ（フォトマルチプ
ライヤー）による検出器で二次電子像を、ＳＳＤ（半導
体検出器）による検出器で反射電子像を検出表示できる
ようにした。像表示の組合わせは、次の〔表２〕に示す
ように８種類ある。In order to display a clear image, the detector of the FIB apparatus uses an MCP (multi-channel plate) to detect and display an ion image and a secondary electron image.
The M detector can detect and display a secondary electron image with a scintillator and a PHM (photomultiplier) detector and a reflected electron image with an SSD (semiconductor detector) detector. There are eight types of image display combinations as shown in Table 2 below.
【００３８】[0038]
【表２】 [Table 2]
【００３９】表２の１又は２は、ＳＥＭで二次電子像又
は反射電子像を観察している状態で、この時イオンビー
ム装置は、動作していないか、検出器をＯＦＦにした場
合で、ＳＥＭで鮮明な像が得ることができた。表２の３
又は４は、ＦＩＢ装置で二次電子像又はイオン像を観察
している状態で、この時ＳＥＭは、動作していないか検
出器をＯＦＦした場合で、ＦＩＢ装置で鮮明な像を得る
ことができた。表２の５は、ＦＩＢ装置でイオン像を観
察し、ＳＥＭで反射電子像を観察している状態で、ＦＩ
Ｂ加工中に加工断面をＳＥＭを観察した場合、ＦＩＢ、
ＳＥＭの双方で鮮明な像が得られた。表２の６は、ＦＩ
Ｂ装置で二次電子像を観察し、ＳＥＭで反射電子像を観
察している状態で、ＦＩＢ加工中に加工断面をＳＥＭ観
察した場合、ＳＥＭで鮮明な像が得られた。表２の７
は、ＦＩＢ装置でイオン像を観察し、ＳＥＭで二次電子
像を観察している状態で、ＦＩＢ加工中に加工断面をＳ
ＥＭを観察した場合、ＦＩＢ装置で鮮明な像が得られ
た。しかし、ＳＥＭの像は不鮮明であった。表２の８
は、ＦＩＢ装置とＳＥＭの両方で二次電子を検出してい
る状態で、ＦＩＢ加工中に加工断面をＳＥＭで観察した
場合、ＦＩＢ装置、ＳＥＭ、それぞれの検出器に両方の
装置で発生した二次電子信号が重畳して検出され、ＦＩ
Ｂ装置の像もＳＥＭの像も不鮮明であった。1 or 2 in Table 2 shows a state in which the secondary electron image or the reflected electron image is observed by the SEM. At this time, the ion beam apparatus is not operated or the detector is turned off. And a clear image could be obtained by SEM. Table 2-3
Or 4 is a state in which a secondary electron image or an ion image is observed with the FIB apparatus, and at this time, the SEM is not operating or the detector is turned off, and a clear image can be obtained with the FIB apparatus. did it. 5 in Table 2 shows the results obtained by observing the ion image with the FIB apparatus and observing the backscattered electron image with the SEM.
When the processing section was observed by SEM during processing B, FIB,
Clear images were obtained with both SEMs. Table 2-6 shows FI
When the processed cross section was observed by SEM during FIB processing in the state where the secondary electron image was observed by the B apparatus and the reflected electron image was observed by SEM, a clear image was obtained by SEM. Table 2-7
In the state of observing the ion image with the FIB apparatus and observing the secondary electron image with the SEM, the processing cross section is S
When the EM was observed, a clear image was obtained with the FIB apparatus. However, the SEM image was unclear. 8 in Table 2
In the state in which secondary electrons are detected by both the FIB device and the SEM, when the processed cross section is observed by the SEM during the FIB processing, the two electron beams generated by the FIB device, the SEM, and the respective detectors are detected by both devices. The next electron signal is superimposed and detected, and FI
Both the image of the apparatus B and the image of the SEM were unclear.
【００４０】ＦＩＢ加工中の加工断面のＳＥＭによる観
察は、鮮明か不鮮明かを別にすると表２の５から８で可
能であったが、鮮明な像を得る観点から表２の５又は６
が望ましく、その中でも最も簡便な方法は６のＦＩＢ装
置で二次電子像を観察し、ＳＥＭで反射電子像を観察す
る方法であった。この検出器の検出モードを変える機能
によって同一断面を、ＦＩＢによる二次電子像、二次イ
オン像、ＳＥＭによる二次電子像、反射電子像をそれぞ
れで比較することによって、半導体の不良解析や構造解
析に役立てることが出来た。Observation by SEM of the processed cross section during FIB processing was possible from 5 to 8 in Table 2 except for clear or unclear, but from the viewpoint of obtaining a clear image, 5 or 6 in Table 2 was possible.
Among them, the simplest method is a method of observing a secondary electron image with an FIB apparatus 6 and observing a reflected electron image with an SEM. By comparing the same cross section with the FIB secondary electron image, secondary ion image, SEM secondary electron image, and reflected electron image by the function of changing the detection mode of the detector, semiconductor failure analysis and structure It was useful for analysis.
【００４１】ステージ機構操作は、ステージ機構操作卓
とＦＩＢ装置のＷＳのステージ機構コントロール画面か
らできるようにした。ステージ機構操作卓の表示は、Ｓ
ＥＭで見たステージ機構の移動方向に合わせた。一方、
ＷＳのステージ機構コントロール画面の表示は、ＦＩＢ
装置で見たステージ機構の移動方向に合わせた。また、
ステージ機構の移動は、ステージ機構コントロール画面
とステージ機構操作卓に連動して座標値を表示するよう
にした。ステージ機構の移動速度は、ステージ機構操作
卓に速度の切替えスイッチを設けた。また、ＦＩＢ装置
の倍率に連動してステージ機構の移動速度が変わるよう
にした。The stage mechanism can be operated from the stage mechanism console and the stage mechanism control screen of the WS of the FIB device. The display of the stage mechanism console is S
It was adjusted to the moving direction of the stage mechanism as seen by EM. on the other hand,
The display of the WS stage mechanism control screen is FIB
It was adjusted to the moving direction of the stage mechanism seen by the device. Also,
When moving the stage mechanism, the coordinate values are displayed in conjunction with the stage mechanism control screen and the stage mechanism console. As for the moving speed of the stage mechanism, a speed changeover switch was provided on the stage mechanism console. Also, the moving speed of the stage mechanism is changed in conjunction with the magnification of the FIB device.
【００４２】また、ＳＥＭでＥＤＳ分析できるように、
ＥＤＳ検出器９５の信号取出し角を最適化し、ＥＤＳを
使用しない場合は、ＥＤＳ検出器９５の先端にシャッタ
ーを設けてＦＩＢ加工で生じるスパッタ粒子によってＥ
ＤＳ検出器９５が汚染されるのを防いだ。また、ＦＩＢ
加工中にＥＤＳ分析を行うために、ＦＩＢ加工中に生じ
るスパッタ粒子で直接ＥＤＳ検出器９５が汚染されない
ように、ＥＤＳ検出器９５の先端に有機保護膜を設け
た。Also, in order to perform EDS analysis by SEM,
When the signal extraction angle of the EDS detector 95 is optimized and EDS is not used, a shutter is provided at the tip of the EDS detector 95 and EDS is generated by sputter particles generated by FIB processing.
The DS detector 95 was prevented from being contaminated. Also, FIB
In order to perform EDS analysis during processing, an organic protective film was provided at the tip of the EDS detector 95 so that the EDS detector 95 was not directly contaminated by sputter particles generated during FIB processing.
【００４３】図８は、本発明の加工観察装置を用いた試
料加工方法の一例を説明する図である。この例は、半導
体デバイスをＦＩＢ装置によって加工してコンタクトホ
ールの部分の断面を作成する例を示している。ＦＩＢ入
射方向、ＳＥＭの電子ビーム入射方向に対する試料の姿
勢は、図３に示すようになっている。FIG. 8 is a view for explaining an example of a sample processing method using the processing observation apparatus of the present invention. This example shows an example in which a semiconductor device is processed by an FIB apparatus to create a cross section of a contact hole portion. The posture of the sample with respect to the FIB incident direction and the SEM electron beam incident direction is as shown in FIG.
【００４４】ＦＩＢ装置は、検出器にマイナスの引き込
み電圧を印加して二次イオン像を観察しながら加工を行
った。ＳＥＭは、検出器としてプラスの電圧を印加した
半導体検出器を用い、二次電子の入射を抑制して加工断
面の反射電子像を実時間観察した。このとき、加工が進
むにつれてＳＥＭの反射電子像は図８（ａ）、（ｂ）、
（ｃ）のように変化した。オペレータはＳＥＭの反射電
子像をモニターし、図８（ｃ）のようにコンタクトホー
ル１０１の断面が現れたとき、ＦＩＢ加工を終了した。The FIB apparatus worked while applying a negative pull-in voltage to the detector and observing the secondary ion image. The SEM used a semiconductor detector to which a positive voltage was applied as a detector, observed the reflected electron image of the processed cross section in real time while suppressing the incidence of secondary electrons. At this time, as the processing proceeds, the backscattered electron image of the SEM is shown in FIGS.
It changed like (c). The operator monitors the backscattered electron image of the SEM, and finishes the FIB processing when the cross section of the contact hole 101 appears as shown in FIG. 8C.
【００４５】図９は、本発明の加工観察装置を用いた試
料加工方法の他の例を説明する図である。この例は、試
料中の異物を調べるために試料をＦＩＢ加工した例であ
る。ＦＩＢ入射方向、ＳＥＭの電子ビーム入射方向に対
する試料の姿勢は、図３に示すようになっている。ＥＤ
Ｓ検出器のエネルギーレベルは、予め異物の特性Ｘ線に
合わせた。FIG. 9 is a view for explaining another example of a sample processing method using the processing observation apparatus of the present invention. This example is an example in which a sample is subjected to FIB processing in order to examine a foreign substance in the sample. The posture of the sample with respect to the FIB incident direction and the SEM electron beam incident direction is as shown in FIG. ED
The energy level of the S detector was previously adjusted to the characteristic X-ray of the foreign matter.
【００４６】ＦＩＢ装置は、検出器にマイナスの引き込
み電圧を印加して二次イオン像を観察しながら加工を行
った。ＳＥＭは、検出器としてプラスの電圧を印加した
半導体検出器を用い、二次電子の入射を抑制して加工断
面の反射電子像を実時間観察した。また、ＥＤＳ検出器
によりＳＥＭの電子線照射によって試料断面から発生さ
れるＸ線分析も同時に行った。加工が進むにつれて、Ｓ
ＥＭの反射電子像は図９（ａ）、（ｂ）、（ｃ）のよう
に変化した。また、加工が進むにつれてＥＤＳ分析信号
強度は、ＦＩＢ加工が進むにつれて図９（ｄ）のように
変化した。オペレータは、ＳＥＭの反射電子像とＥＤＳ
分析信号強度をモニターし、図９（ｃ）のようにＳＥＭ
像に異物１０２が大きく現れ、ＥＤＳ分析による異物の
物質分析結果が最大となった時間ｔ＝ｔ3でＦＩＢ加工
を止めた。The FIB apparatus worked while applying a negative pull-in voltage to the detector and observing the secondary ion image. The SEM used a semiconductor detector to which a positive voltage was applied as a detector, observed the reflected electron image of the processed cross section in real time while suppressing the incidence of secondary electrons. Further, X-ray analysis generated from the cross section of the sample by SEM electron beam irradiation by the EDS detector was also performed at the same time. As the processing progresses, S
The reflected electron image of the EM changed as shown in FIGS. 9 (a), 9 (b) and 9 (c). Further, as the processing progressed, the EDS analysis signal intensity changed as shown in FIG. 9D as the FIB processing progressed. The operator is responsible for the SEM backscattered electron image and EDS
The analysis signal intensity was monitored, and SEM was performed as shown in FIG.
FIB processing was stopped at a time t = t 3 at which the foreign substance 102 largely appeared in the image and the substance analysis result of the foreign substance by EDS analysis became maximum.
【００４７】[0047]
【発明の効果】本発明によると、ＦＩＢ装置で加工して
いる試料断面の状態をＳＥＭで確認しながらＦＩＢ加工
制御できる。これによって、試料の特定の位置を精度良
くＦＩＢ加工することが可能になり、０．１μｍ以下の
加工位置精度で０．１μｍ以下の薄さの加工ができる。
また、試料表面からでは加工場所が分からない試料をＴ
ＥＭ試料に加工することができる。According to the present invention, FIB processing can be controlled while confirming the state of the cross section of the sample being processed by the FIB apparatus by SEM. This makes it possible to perform FIB processing on a specific position of the sample with high accuracy, and to perform processing with a thickness of 0.1 μm or less with a processing position accuracy of 0.1 μm or less.
In addition, a sample whose processing location is not known from the sample surface is T
Can be processed into EM samples.
【００４８】また、試料の同一断面から得たＦＩＢによ
る二次電子像、二次イオン像、ＳＥＭによる二次電子
像、反射電子像をそれぞれ比較することによって豊富な
情報を得ることができ、半導体の不良解析等に役立てる
ことが出来る。Further, abundant information can be obtained by comparing the secondary electron image by FIB, the secondary ion image, the secondary electron image by SEM, and the reflected electron image obtained from the same cross section of the sample. Can be used for failure analysis and the like.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明による加工観察装置のシステム構成例を
説明する概略図。FIG. 1 is a schematic diagram illustrating an example of a system configuration of a processing observation device according to the present invention.
【図２】試料ホールダとステージ機構の説明図。FIG. 2 is an explanatory view of a sample holder and a stage mechanism.
【図３】ＦＩＢ装置のイオンビーム入射方向、ＳＥＭの
電子ビーム入射方向、及びステージ機構の移動方向の関
係を説明する図。FIG. 3 is a view for explaining a relationship among an ion beam incident direction of an FIB apparatus, an electron beam incident direction of an SEM, and a moving direction of a stage mechanism.
【図４】ＦＩＢ装置とＳＥＭの視野合わせ調整機構の説
明図。FIG. 4 is an explanatory diagram of a field-of-view adjusting mechanism of the FIB device and the SEM.
【図５】本発明による試料加工観察装置のシステム構成
を示す概略図。FIG. 5 is a schematic diagram showing a system configuration of a sample processing observation apparatus according to the present invention.
【図６】電子線照射で試料から発生する二次粒子のエネ
ルギー分布を示す説明図。FIG. 6 is an explanatory diagram showing an energy distribution of secondary particles generated from a sample by electron beam irradiation.
【図７】イオン照射で試料から発生する二次粒子のエネ
ルギー分布を示す説明図。FIG. 7 is an explanatory diagram showing an energy distribution of secondary particles generated from a sample by ion irradiation.
【図８】本発明の加工観察装置を用いた試料加工方法の
一例を説明する図。FIG. 8 is a diagram illustrating an example of a sample processing method using the processing observation device of the present invention.
【図９】本発明の加工観察装置を用いた試料加工方法の
他の例を説明する図。FIG. 9 is a view for explaining another example of the sample processing method using the processing observation device of the present invention.
１０…試料、１１…二次電子、１２…二次イオン、１３
…二次電子、１４…反射電子、２０…ＦＩＢカラム、２
１…イオン源、２２…イオンビーム、２３…ビーム制限
アパーチャ、２４…対物レンズ、２５…ビーム走査信号
生成装置、２６…偏向器制御装置、２７…偏向器、３１
…ＦＩＢ装置用検出器、３２…プリアンプ、３３…モニ
ター、３４…信号処理装置、４０…ＳＥＭカラム、４１
…電子源、４２…電子ビーム、４３…ビーム制限アパー
チャ、４４…対物レンズ、４５…走査信号生成装置、４
６…偏向器制御装置、４７…偏向器、５１…ＳＥＭ用検
出器、５２…プリアンプ、５３…モニター、５４…信号
処理装置、５９…ＳＥＭカラム取付けフランジ、６０…
試料室６０、６１…Ｏリング、６２…位置調整板、６３
…位置調整ネジ、６５…真空排気装置、７０…ステージ
機構、７１…シャフト挿入穴、７２…溝、８０…試料ホ
ールダ、８１…ピン、８３…シャフト、８４…シャフ
ト、８５…試料固定部、８６…取っ手、８７…試料向き
切替えつまみ、９０…制御コンピュータ、９５…ＥＤＳ
検出器、９６…Ｗデポ銃、１０１…コンタクトホール、
１０２…異物10 ... sample, 11 ... secondary electron, 12 ... secondary ion, 13
... secondary electrons, 14 ... reflected electrons, 20 ... FIB columns, 2
DESCRIPTION OF SYMBOLS 1 ... Ion source, 22 ... Ion beam, 23 ... Beam limiting aperture, 24 ... Objective lens, 25 ... Beam scanning signal generator, 26 ... Deflector controller, 27 ... Deflector, 31
Detector for FIB device, 32 Preamplifier, 33 Monitor, 34 Signal processor, 40 SEM column, 41
... Electron source, 42 ... Electron beam, 43 ... Beam limiting aperture, 44 ... Objective lens, 45 ... Scan signal generator, 4
6: Deflector control device, 47: Deflector, 51: SEM detector, 52: Preamplifier, 53: Monitor, 54: Signal processing device, 59: SEM column mounting flange, 60:
Sample chambers 60, 61: O-ring, 62: Position adjusting plate, 63
... Position adjusting screw, 65 ... Vacuum exhaust device, 70 ... Stage mechanism, 71 ... Shaft insertion hole, 72 ... Groove, 80 ... Sample holder, 81 ... Pin, 83 ... Shaft, 84 ... Shaft, 85 ... Sample fixing part, 86 … Handle, 87… sample direction switching knob, 90… control computer, 95… EDS
Detector, 96 ... W depot gun, 101 ... Contact hole,
102: Foreign matter
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小池 英巳 茨城県ひたちなか市大字市毛882番地 株 式会社日立製作所計測器グループ内 (72)発明者 伊東 祐博 茨城県ひたちなか市大字市毛1040番地 株 式会社日立サイエンスシステムズ内 (72)発明者 雪田 憲史 茨城県ひたちなか市大字市毛1040番地 株 式会社日立サイエンスシステムズ内 (72)発明者 二村 和孝 愛知県名古屋市中村区名駅４−６−18 日 製産業株式会社内 Ｆターム(参考） 5C001 AA03 AA04 AA06 CC03 CC04 5C033 NN01 NN02 NN05 NP06 UU04 UU06 5C034 DD05 DD06 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hidemi Koike 882, Omo, Oaza, Hitachinaka-shi, Ibaraki Prefecture Within the measuring instruments group of Hitachi, Ltd. Hitachi Science Systems, Ltd. (72) Inventor Norifumi Yukita 1040, Oji-shi, Oita, Hitachinaka-shi, Ibaraki Co., Ltd. F-term (reference) in Sangyo Sangyo Co., Ltd. 5C001 AA03 AA04 AA06 CC03 CC04 5C033 NN01 NN02 NN05 NP06 UU04 UU06 5C034 DD05 DD06
Claims (9)
と、走査電子顕微鏡カラムと、前記試料室に固定され試
料ホールダを保持して駆動するステージ機構とを備え、 前記集束イオンビーム装置カラムのイオンビーム光学軸
と前記走査電子顕微鏡カラムの電子ビーム光学軸と前記
ステージ機構の試料ホールダ駆動軸の一軸とが互いに略
直交していることを特徴とする加工観察装置。1. A sample chamber, a focused ion beam device column, a scanning electron microscope column, and a stage mechanism fixed to the sample room and holding and driving a sample holder, wherein ions of the focused ion beam device column are provided. A processing observation apparatus, wherein a beam optical axis, an electron beam optical axis of the scanning electron microscope column, and one axis of a sample holder driving axis of the stage mechanism are substantially orthogonal to each other.
試料ホールダは前記ステージ機構の前記一軸のまわりに
９０°ステップで３６０°回転できることを特徴とする
加工観察装置。2. The processing observation apparatus according to claim 1, wherein
A processing observation apparatus characterized in that the sample holder can be rotated 360 ° around the one axis of the stage mechanism in 90 ° steps.
いて、前記試料室に対する前記集束イオン装置カラム及
び前記走査電子顕微鏡カラムの少なくとも一方の位置を
調整する位置調整機構を備えることを特徴とする加工観
察装置。3. The processing observation apparatus according to claim 1, further comprising a position adjusting mechanism for adjusting at least one of the focused ion device column and the scanning electron microscope column with respect to the sample chamber. Processing observation device.
において、前記集束イオンビーム装置の像倍率と前記走
査電子顕微鏡の像倍率とを独立に制御できることを特徴
とする加工観察装置。4. The processing and observation device according to claim 1, wherein the image magnification of the focused ion beam device and the image magnification of the scanning electron microscope can be controlled independently.
観察装置において、前記集束イオンビーム装置はイオン
像と二次電子像とを切り換えて表示する機能を有し、前
記走査電子顕微鏡は反射電子像と二次電子像とを切り換
えて表示する機能を有することを特徴とする加工観察装
置。5. The scanning electron microscope according to claim 1, wherein the focused ion beam device has a function of switching and displaying an ion image and a secondary electron image. A processing observation apparatus having a function of switching and displaying a reflected electron image and a secondary electron image.
観察装置を用いた試料加工方法において、試料の集束イ
オンビーム加工断面を走査電子顕微鏡で観察しながら集
束イオンビームで加工することを特徴とする試料加工方
法。6. A sample processing method using the processing and observation apparatus according to claim 1, wherein the focused ion beam processing section is processed with a focused ion beam while observing a focused ion beam processed cross section of the sample with a scanning electron microscope. A sample processing method comprising:
観察装置を用いた試料加工方法において、試料の集束イ
オンビーム加工断面を走査電子顕微鏡で反射電子像を観
察しながら集束イオンビームで加工することを特徴とす
る試料加工方法。7. A sample processing method using the processing observation apparatus according to claim 1, wherein the focused ion beam processing section of the sample is observed by a scanning electron microscope while observing a reflected electron image. A sample processing method characterized by processing by:
観察装置を用いた試料加工方法において、試料の集束イ
オンビーム加工中の加工断面をエネルギー分散形Ｘ線分
析装置で分析しながら集束イオンビームで加工すること
を特徴とする試料加工方法。8. A sample processing method using the processing observation apparatus according to any one of claims 1 to 5, wherein a processing section of the sample during focused ion beam processing is analyzed by an energy dispersive X-ray analyzer. A sample processing method characterized by processing with a focused ion beam.
において、集束イオンビーム加工中は、集束イオンビー
ム装置は試料のイオン像を観察することを特徴とする試
料加工方法。9. The sample processing method according to claim 6, wherein the focused ion beam apparatus observes an ion image of the sample during the focused ion beam processing.
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| JP26412299A JP3897271B2 (en) | 1999-09-17 | 1999-09-17 | Processing observation apparatus and sample processing method |
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