JP2001062588A - Brazing material for aluminum circuit board, and ceramic circuit substrate using it - Google Patents
Brazing material for aluminum circuit board, and ceramic circuit substrate using itInfo
- Publication number
- JP2001062588A JP2001062588A JP24441699A JP24441699A JP2001062588A JP 2001062588 A JP2001062588 A JP 2001062588A JP 24441699 A JP24441699 A JP 24441699A JP 24441699 A JP24441699 A JP 24441699A JP 2001062588 A JP2001062588 A JP 2001062588A
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- Japan
- Prior art keywords
- aluminum
- circuit board
- substrate
- brazing material
- ceramic substrate
- Prior art date
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、パワーモジュール
等に使用されるセラミックス基板と金属板の接合ろう材
およびそれを用いた高信頼性のセラミックス回路基板に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a brazing filler metal between a ceramic substrate and a metal plate used for a power module or the like, and a highly reliable ceramic circuit substrate using the same.
【0002】[0002]
【従来の技術】従来から、熱発生の大きい半導体素子等
を搭載するためのパワーモジュール等の回路基板とし
て、アルミナ(Al2O3)セラミックス等の絶縁性に優
れたセラミックス基板の表面に、導電性を有する回路層
を接合した回路基板が広く普及している。2. Description of the Related Art Conventionally, as a circuit board for a power module or the like for mounting a semiconductor element or the like which generates a large amount of heat, an electrically conductive ceramic substrate such as an alumina (Al 2 O 3 ) ceramic is formed on the surface of the substrate. 2. Description of the Related Art A circuit board in which circuit layers having different properties are joined has been widely used.
【0003】しかし、近年、これら半導体素子は機器類
の小型化、高性能化に伴って熱発生量が増加する傾向に
あり、信頼性高く安定動作を得るために半導体素子の発
生する熱を放散して、素子が破壊されない温度より充分
低くすることが一層重要な課題となってきており、前記
回路基板の特性として電気絶縁性が高いことに加え、よ
り高い熱伝導性が要求されてきている。However, in recent years, the amount of heat generated by these semiconductor elements has tended to increase with the miniaturization and high performance of equipment, and the heat generated by the semiconductor elements has been dissipated in order to obtain reliable and stable operation. Therefore, it has become more important to make the temperature sufficiently lower than the temperature at which the element is not destroyed, and in addition to high electrical insulation properties as the characteristics of the circuit board, higher thermal conductivity has been required. .
【0004】上記の要求に伴って、熱伝導性の高い窒化
アルミニウム(AlN)などのセラミックスを基板材料
として用いた、放熱性の高い銅回路基板が開発されてい
る。しかし、前記銅回路基板は機械的特性が不十分であ
り、回路基板として用いる場合には、半導体素子の作動
に伴う繰り返しの熱サイクルや動作環境の温度変化等
で、セラミックス部分の銅回路層の接合部付近にクラッ
クが発生しやすく、信頼性が低いという問題点があっ
た。[0004] In accordance with the above demand, a copper circuit board having high heat dissipation using ceramics such as aluminum nitride (AlN) having high heat conductivity as a substrate material has been developed. However, the copper circuit board has insufficient mechanical properties, and when used as a circuit board, the copper circuit layer of the ceramic portion may be subjected to repeated thermal cycling or temperature changes in the operating environment due to the operation of the semiconductor element. There is a problem that cracks are apt to occur near the joint and reliability is low.
【0005】この問題の解決として、例えば特開平4−
12554号公報や特開平4−18746号公報に回路
材料として銅よりも降伏耐力の小さいアルミニウム(A
l)を用いたセラミックス回路基板が開示されている。As a solution to this problem, for example, Japanese Unexamined Patent Publication No.
No. 12554 and Japanese Patent Application Laid-Open No. 4-18746 disclose aluminum (A) having a lower yield strength than copper as a circuit material.
A ceramic circuit board using 1) is disclosed.
【0006】しかし、信頼性の指標となる−40℃から
125℃までの繰り返し冷却、加熱する耐ヒートサイク
ル性については、前記回路基板であっても1500回程
度でアルミニウム回路材の剥離が起こったり、セラミッ
クス基板にクラックが入る等の問題が発生し、上述のよ
うに高い信頼性の要求される用途には充分対応ができな
い。However, with regard to the heat cycle resistance of repeatedly cooling and heating from -40.degree. C. to 125.degree. C., which is an index of reliability, even if the circuit board is used, the aluminum circuit material may peel off after about 1500 times. As a result, problems such as cracks in the ceramic substrate occur, and it is not possible to sufficiently cope with applications requiring high reliability as described above.
【0007】また、特開平8−208359号公報に
は、Alの溶湯を用いてAlを直接AlN基板に接合し
た回路基板が開示されている。この発明によれば、Al
回路基板単体で3000回を越える耐ヒートサイクル性
が達成されている。Japanese Patent Application Laid-Open No. 8-208359 discloses a circuit board in which Al is directly bonded to an AlN substrate using a molten metal of Al. According to the present invention, Al
The circuit board alone has achieved heat cycle resistance of more than 3000 times.
【0008】しかし、Al溶湯を用いて直接接合してい
るために、Al回路層の厚さのバラツキが大きく、安定
して信頼性の高い回路基板が得られないだけでなく、設
備費や設備の維持管理がかかりコストアップになるとい
う問題がある。[0008] However, the direct bonding using the molten aluminum causes a large variation in the thickness of the Al circuit layer, so that not only a stable and highly reliable circuit board cannot be obtained, but also equipment cost and equipment. There is a problem that maintenance is required and the cost is increased.
【0009】[0009]
【発明が解決しようとする課題】本発明は、上記公知技
術の事情に鑑みてなされたものであり、例えば、電気自
動車や鉄道等の用途に適用できるパワーモジュールのよ
うな、高い信頼性が要求される用途に対応できるセラミ
ックス回路基板を提供することを目的とするものであ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the circumstances of the above-mentioned known technology, and requires high reliability such as a power module applicable to electric vehicles and railways. It is an object of the present invention to provide a ceramic circuit board that can be used for various applications.
【0010】[0010]
【課題を解決するための手段】本発明者は、上記目的を
達成するために鋭意検討した結果、回路材料であるアル
ミニウム(Al)材とセラミックス基板の接合温度を低
下させることで製造時に発生する熱応力を低減でき、ヒ
ートサイクルによる熱応力に耐えることができることを
見出し、本発明に至ったものである。Means for Solving the Problems As a result of the inventor's intensive studies to achieve the above object, the present inventors have found that a reduction in the joining temperature between an aluminum (Al) material, which is a circuit material, and a ceramic substrate causes a problem during manufacturing. The present inventors have found that the thermal stress can be reduced and the thermal stress due to the heat cycle can be withheld, and the present invention has been achieved.
【0011】すなわち、本発明は、セラミックス基板と
アルミニウムを主成分とする金属板とを接合するろう材
であって、Mgと、Cu、Si、Geからなる群の少な
くとも1種以上の元素とを含み、残部がAlであること
を特徴とするろう材であり、少なくとも一部が液相とな
る温度が500℃〜630℃であることを特徴とする
が、特に、Mgが0.05重量%〜3重量%であること
を特徴とする。That is, the present invention relates to a brazing material for joining a ceramic substrate and a metal plate containing aluminum as a main component, wherein Mg and at least one element selected from the group consisting of Cu, Si and Ge are used. A brazing filler metal containing at least a part of which is Al, and a temperature at which at least a part thereof becomes a liquid phase is 500 ° C. to 630 ° C., and particularly, 0.05% by weight of Mg -3% by weight.
【0012】また、本発明は、前記ろう材を介して、セ
ラミックス基板とアルミニウムを主成分とする金属板と
を接合してなることを特徴とするセラミックス回路基板
である。さらには、セラミックス基板が、窒化アルミニ
ウム、窒化珪素、炭化珪素またはアルミナの何れかであ
ることを特徴とする。Further, the present invention is a ceramic circuit board characterized in that a ceramic substrate and a metal plate mainly composed of aluminum are joined via the brazing material. Further, the ceramic substrate is any one of aluminum nitride, silicon nitride, silicon carbide, and alumina.
【0013】[0013]
【発明の実施の形態】本発明で用いるアルミニウムを主
成分とする金属板は、接合後の信頼性を考慮するとAl
板の純度として99.0重量%以上であることが好まし
い。99.0重量%よりも低純度では降伏耐力が大き
く、回路基板とした場合に、回路基板単体だけでも一般
的な信頼性評価のヒートサイクル試験(−40℃←→1
25℃)において1000回以下で基板にクラックやA
l回路剥離等が発生することがある。BEST MODE FOR CARRYING OUT THE INVENTION The metal plate containing aluminum as a main component used in the present invention is made of aluminum in consideration of reliability after joining.
The purity of the plate is preferably 99.0% by weight or more. When the purity is lower than 99.0% by weight, the yield strength is large, and when a circuit board is used, a heat cycle test (-40 ° C ← → 1
(25 ° C.) 1000 times or less
One-circuit peeling may occur.
【0014】ろう材の成分としては、Mgと、Cu、S
i、Geからなる群の少なくとも1種以上の元素とを含
み、残部がAlであることが重要である。Mgは接合の
妨害となる界面に存在する酸化物を除去してくれるだけ
ではなく、ろう材の低融点化にも寄与するものと考えら
れる。また、Mgと組み合わせて使用した場合、Cu、
Si、Geはいずれも単独であってもろう材合金の低融
点化に寄与するが、これらを複数組み合わせて用いるこ
ともできる。The components of the brazing material include Mg, Cu, S
It is important that at least one element of the group consisting of i and Ge is included, and the balance is Al. It is considered that Mg not only removes oxides present at the interface that hinders joining, but also contributes to lowering the melting point of the brazing material. When used in combination with Mg, Cu,
Although Si and Ge each alone contribute to lowering the melting point of the brazing alloy, a plurality of these can also be used.
【0015】前記ろう材は500℃〜630℃の温度範
囲で少なくとも一部が液相を形成するものが良い。即
ち、500℃未満では接合性の面で充分でないことがあ
るし、630℃を越える温度ではアルミニウム板やセラ
ミックス基板に残留する熱応力が大きくなるし、アルミ
ニウム材の融点に近くなるためロウ接欠陥が生じやすく
なるからである。The brazing material preferably forms a liquid phase at least partially in a temperature range of 500 ° C. to 630 ° C. That is, if the temperature is lower than 500 ° C., the bonding property may not be sufficient. If the temperature exceeds 630 ° C., the thermal stress remaining on the aluminum plate or the ceramic substrate increases, and the melting point of the aluminum material becomes close to the melting point of the aluminum material. Is likely to occur.
【0016】本発明において、Mgとしては0.05重
量%〜3重量%であることが好ましい。0.05重量%
より少ないと酸化物除去の効果が低く、逆に3重量%を
越えると理由は明らかではないが接合性が悪化すること
がある。尚、前記合金を用いてアルミニウム板とセラミ
ックス基板とを接合(ろう接)する場合、接合する面に
1〜50kgf/cm2の垂直力を付加することが望ま
しい。In the present invention, Mg is preferably 0.05% by weight to 3% by weight. 0.05% by weight
If the amount is less than the above, the effect of removing oxides is low. When the aluminum plate and the ceramic substrate are joined (brazed) using the alloy, it is desirable to apply a normal force of 1 to 50 kgf / cm 2 to the joining surface.
【0017】本発明のろう材の作り方については、例え
ば、黒鉛-炭化ケイ素複合材のルツボにAlだけを溶融
させ、そこに所定量の金属を添加し、充分撹拌溶解す
る。続いてフラックスを添加、充分撹拌して鉱滓等を除
去後、溶解したろう材合金を型に流し込み冷却固化させ
る。その後、圧延機を通して徐々に箔化して、必要に応
じてアニールを加え、最終的に20μm厚さの箔にすれ
ばよい。また、所望組成の金属粉を混合したものを有機
溶媒に分散した形態でも構わない。Regarding the method of producing the brazing material of the present invention, for example, only Al is melted in a crucible of a graphite-silicon carbide composite material, a predetermined amount of metal is added thereto, and sufficiently stirred and dissolved. Subsequently, after adding a flux and sufficiently stirring to remove slag and the like, the molten brazing alloy is poured into a mold and solidified by cooling. Thereafter, the foil is gradually formed into a foil through a rolling mill, and if necessary, annealed to form a foil having a thickness of 20 μm. Further, a mixture of metal powders having a desired composition may be dispersed in an organic solvent.
【0018】また、基材となるセラミックスとしては、
電気絶縁性で熱伝導性に富むものならばどの様なもので
も構わず、例えば、アルミナ(Al2O3)やベリリア
(BeO)を添加した炭化珪素(SiC)、窒化珪素、
窒化アルミニウム等を挙げることができるが、これらの
内では、電力が大きなパワーデバイスで熱の発生が大き
いことを考慮すると絶縁耐圧が高く、熱伝導性の高いこ
とから窒化アルミニウム(AlN)基板、窒化珪素(S
i3N4)が好適である。Further, ceramics as a base material include:
Any material may be used as long as it is electrically insulating and has high thermal conductivity. For example, silicon carbide (SiC) to which alumina (Al 2 O 3 ) or beryllia (BeO) is added, silicon nitride,
Among them, aluminum nitride (AlN) substrate and aluminum nitride (AlN) substrate can be used because of their high withstand voltage and high thermal conductivity, considering that a large power device generates a large amount of heat. Silicon (S
i 3 N 4 ) are preferred.
【0019】本発明の回路基板は、アルミニウムを主成
分とする金属板と窒化アルミニウム基板等のセラミック
ス基板とを接合材を用いて加熱接合した後、エッチング
する方法、或いは、金属板から打ち抜き法等により予め
回路パターンを形成し、これをセラミックス基板に本発
明になるろう材を用いて接合する方法等によって製造す
ることができる。The circuit board of the present invention can be formed by a method in which a metal plate containing aluminum as a main component and a ceramic substrate such as an aluminum nitride substrate are joined by heating using a joining material and then etched, or a method of punching from the metal plate. Thus, a circuit pattern can be formed in advance by using a brazing material according to the present invention, and a circuit pattern can be manufactured by using a brazing material according to the present invention.
【0020】上記のいずれの接合方法においても、接合
時の熱応力をできるだけ低く抑えるためにより低温で接
合できることが重要であるが、本発明者らが金属板と窒
化アルミニウム基板等のセラミックス基板との接合につ
いて、いろいろ実験的に検討を重ねた結果、液相を生じ
る温度が500℃〜630℃であるろう材を用いて接合
するときに、得られるセラミックス回路基板、更にそれ
を用いて作製したモジュールの信頼性を高く改善できる
という知見を得て、本発明に至ったものである。In any of the above joining methods, it is important that the joining can be performed at a lower temperature in order to keep the thermal stress during joining as low as possible. However, the present inventors have proposed that the joining between a metal plate and a ceramic substrate such as an aluminum nitride substrate can be performed. As a result of various experimental studies on the joining, a ceramic circuit board obtained when joining using a brazing material having a liquid phase generating temperature of 500 ° C. to 630 ° C., and a module manufactured using the same. It has been found that the reliability of the present invention can be improved, and the present invention has been achieved.
【0021】[0021]
【実施例】以下、実施例と比較例とをあげて、本発明を
詳細に説明するが、本発明はこれらに限定されるもので
はない。EXAMPLES Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
【0022】〔実施例1〜10および比較例1〜3〕セ
ラミックス基板として、50mm×50mm×0.63
5mmの窒化アルミニウム基板および窒化珪素基板で、
レーザーフラッシュ法による熱伝導率はそれぞれ175
W/mKおよび75W/mKで、3点曲げ強さの平均値
は420MPaおよび560MPaのものを用意した。
また、アルミニウムを主成分とする金属板として厚さ
0.4mmのJIS呼称1085材を用意した。Examples 1 to 10 and Comparative Examples 1 to 3 As ceramic substrates, 50 mm × 50 mm × 0.63
5 mm aluminum nitride substrate and silicon nitride substrate,
Thermal conductivity by laser flash method is 175 each
W / mK and 75 W / mK, and the three-point bending strength average values of 420 MPa and 560 MPa were prepared.
Also, a JIS-named 1085 material having a thickness of 0.4 mm was prepared as a metal plate containing aluminum as a main component.
【0023】ろう材合金箔の製造として、以下、4重量
%Cu−1重量%Mg−残Alの組成のものの場合を例
示する。黒鉛-炭化ケイ素複合材のルツボにAlだけを
750℃で溶融させ、そこに4重量%相当のCuを添加
し、900℃にして充分撹拌溶解した。続いてフラック
ス(例えば日本金属化学社製N406)を添加、充分撹
拌して鉱滓等を除去後、1重量%相当のMgを添加後、
溶解したろう材合金を型に流し込み冷却固化させた。そ
の後、圧延機を通して薄化と350℃アニールを繰り返
し、最終的に20μm厚さの箔にした。他のろう材合金
箔も上記に準じて作製した。As an example of the production of the brazing alloy foil, a case of a composition having a composition of 4% by weight of Cu, 1% by weight of Mg and the remaining Al will be exemplified. Only Al was melted in a graphite-silicon carbide composite crucible at 750 ° C, and 4 wt% of Cu was added thereto, and the mixture was sufficiently stirred and dissolved at 900 ° C. Subsequently, a flux (for example, N406 manufactured by Nippon Metal Chemical Co., Ltd.) is added, and after sufficiently stirring to remove slag and the like, 1 wt% of Mg is added.
The melted brazing alloy was poured into a mold and solidified by cooling. Thereafter, thinning and annealing at 350 ° C. were repeated through a rolling mill to finally form a foil having a thickness of 20 μm. Other brazing alloy foils were also prepared according to the above.
【0024】前記窒化アルミニウム基板の表裏両面に、
表1に示す各種組成の20μmろう材合金箔を介して重
ね、垂直方向に35kgf/cm2で加圧した。そし
て、10-4Torrの真空中、温度500℃〜650℃
の条件下で加圧しながらアルミニウム板と窒化アルミニ
ウム基板とを接合した。実施例、比較例の各々の接合条
件を表2に示す。On both the front and back surfaces of the aluminum nitride substrate,
They were overlaid with 20 μm brazing alloy foils of various compositions shown in Table 1 and pressed vertically at 35 kgf / cm 2 . Then, in a vacuum of 10 -4 Torr, a temperature of 500 ° C. to 650 ° C.
The aluminum plate and the aluminum nitride substrate were joined while pressing under the conditions described above. Table 2 shows the joining conditions of the examples and the comparative examples.
【0025】[0025]
【表1】 [Table 1]
【0026】[0026]
【表2】 [Table 2]
【0027】接合後、アルミニウム板表面の所望部分に
エッチングレジストをスクリーン印刷して、塩化第二鉄
溶液にてエッチング処理し回路パターンを形成した。次
いで、レジストを剥離した後、無電解Ni−Pメッキを
3μm行い、回路基板とした。得られた回路基板につい
て、以下に示すように信頼性の評価を行った。After bonding, an etching resist was screen-printed on a desired portion of the aluminum plate surface, and was etched with a ferric chloride solution to form a circuit pattern. Next, after the resist was removed, electroless Ni-P plating was performed at 3 μm to obtain a circuit board. The reliability of the obtained circuit board was evaluated as described below.
【0028】信頼性評価;回路基板に−50℃×30分
→室温×10分→150℃×30分→室温×10分を1
サイクルとするヒートサイクルを1000回実施した。
その後、目視及び超音波探傷による回路板の剥離やセラ
ミックス基板におけるクラック発生状況等の異常の有無
を観察した。結果を表3に示す。Reliability evaluation: -50 ° C. × 30 minutes → room temperature × 10 minutes → 150 ° C. × 30 minutes → room temperature × 10 minutes
The heat cycle was performed 1000 times.
Thereafter, the presence or absence of abnormalities such as peeling of the circuit board by visual inspection and ultrasonic flaw detection and the occurrence of cracks in the ceramic substrate was observed. Table 3 shows the results.
【0029】[0029]
【表3】 [Table 3]
【0030】表3で明らかなように、本発明の実施例
は、いずれも信頼性評価において、ヒートサイクル10
00回後でも回路剥離やハンダクラック等の異常は認め
られず、高信頼性基板としては充分なものであった。As can be seen from Table 3, all of the examples of the present invention have a heat cycle of 10 in the reliability evaluation.
No abnormalities such as circuit peeling and solder cracks were observed even after the 00th operation, which was sufficient for a highly reliable substrate.
【0031】[0031]
【発明の効果】本発明によれば、セラミックス基板とア
ルミニウムを主成分とする金属板とを接合するろう材に
おいて、Mgと、Cu、Si、Geからなる群の少なく
とも1種以上の元素とを含み、残部がAlとすることで
従来のろう材に比べて接合温度を下げられることから、
残留熱応力を低くでき、高信頼性の回路基板を再現良
く、しかも低コストで提供することができる。According to the present invention, in a brazing material for joining a ceramic substrate and a metal plate containing aluminum as a main component, Mg and at least one element of the group consisting of Cu, Si and Ge are used. Including, the rest is made of Al, so that the joining temperature can be reduced compared to the conventional brazing material,
The residual thermal stress can be reduced, and a highly reliable circuit board can be provided with good reproducibility and at low cost.
【0032】また、本発明のセラミックス回路基板は、
前記ろう材を用いているので、残留熱応力が低く、その
ため高信頼性であるという特徴を有しており、産業上極
めて有用である。Further, the ceramic circuit board of the present invention comprises:
Since the brazing material is used, it has a feature of low residual thermal stress and therefore high reliability, and is extremely useful in industry.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/38 H05K 3/38 E // B23K 101:42 (72)発明者 伊吹山 正浩 東京都町田市旭町3丁目5番1号 電気化 学工業株式会社中央研究所内 (72)発明者 杉本 勲 東京都町田市旭町3丁目5番1号 電気化 学工業株式会社中央研究所内 Fターム(参考) 4E351 AA07 AA08 AA09 AA14 DD04 DD08 DD11 EE03 GG01 GG03 GG04 5E343 AA02 AA22 DD52 ER39 GG02──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 3/38 H05K 3/38 E // B23K 101: 42 (72) Inventor Masahiro Ibukiyama Machida, Tokyo 3-5-1 Asahicho, Central Research Laboratory, Denka Kagaku Kogyo Co., Ltd. (72) Inventor Isao 3-5-1 Asahimachi, Machida City, Tokyo F-term, Central Research Laboratory, Denki Kagaku Kogyo Co., Ltd. 4E351 AA07 AA08 AA09 AA14 DD04 DD08 DD11 EE03 GG01 GG03 GG04 5E343 AA02 AA22 DD52 ER39 GG02
Claims (5)
とする金属板とを接合するろう材であって、Mgと、C
u、Si、Geからなる群の少なくとも1種以上の元素
とを含み、残部がAlであることを特徴とするろう材。1. A brazing material for joining a ceramic substrate and a metal plate containing aluminum as a main component, comprising:
A brazing material comprising at least one element selected from the group consisting of u, Si, and Ge, with the balance being Al.
℃〜630℃であることを特徴とする請求項1記載のろ
う材。2. The temperature at which at least a part of the liquid phase becomes 500.
The brazing material according to claim 1, wherein the temperature is from ℃ to 630 ° C.
とを特徴とする請求項1又は請求項2記載のろう材。3. The brazing material according to claim 1, wherein Mg is 0.05% by weight to 3% by weight.
う材を介して、セラミックス基板とアルミニウムを主成
分とする金属板とを接合してなることを特徴とするセラ
ミックス回路基板。4. A ceramic circuit board comprising a ceramic substrate and a metal plate containing aluminum as a main component, joined via the brazing material according to claim 1.
窒化珪素、炭化珪素またはアルミナの何れかであること
を特徴とする請求項4記載のセラミックス回路基板。5. A ceramic substrate comprising: aluminum nitride;
The ceramic circuit board according to claim 4, wherein the ceramic circuit board is any one of silicon nitride, silicon carbide, and alumina.
Priority Applications (1)
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JP24441699A JP2001062588A (en) | 1999-08-31 | 1999-08-31 | Brazing material for aluminum circuit board, and ceramic circuit substrate using it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24441699A JP2001062588A (en) | 1999-08-31 | 1999-08-31 | Brazing material for aluminum circuit board, and ceramic circuit substrate using it |
Publications (1)
Publication Number | Publication Date |
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JP2001062588A true JP2001062588A (en) | 2001-03-13 |
Family
ID=17118348
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JP24441699A Pending JP2001062588A (en) | 1999-08-31 | 1999-08-31 | Brazing material for aluminum circuit board, and ceramic circuit substrate using it |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2458026A1 (en) * | 2004-07-15 | 2012-05-30 | Alcoa Inc. | 2000 series alloys with enhanced damage tolerance performance for aerospace applications |
KR20180077170A (en) | 2015-11-06 | 2018-07-06 | 미쓰비시 마테리알 가부시키가이샤 | Ceramics / aluminum junction body, substrate for power module, and power module |
-
1999
- 1999-08-31 JP JP24441699A patent/JP2001062588A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2458026A1 (en) * | 2004-07-15 | 2012-05-30 | Alcoa Inc. | 2000 series alloys with enhanced damage tolerance performance for aerospace applications |
KR20180077170A (en) | 2015-11-06 | 2018-07-06 | 미쓰비시 마테리알 가부시키가이샤 | Ceramics / aluminum junction body, substrate for power module, and power module |
US10607907B2 (en) | 2015-11-06 | 2020-03-31 | Mitsubishi Materials Corporation | Ceramic-aluminum conjugate, power module substrate, and power module |
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